@article{1743,
  author       = {{Rockstuhl, Carsten and Paul, Thomas and Lederer, Falk and Pertsch, Thomas and Zentgraf, Thomas and Meyrath, Todd P. and Giessen, Harald}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{3}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Transition from thin-film to bulk properties of metamaterials}}},
  doi          = {{10.1103/physrevb.77.035126}},
  volume       = {{77}},
  year         = {{2008}},
}

@article{4554,
  abstract     = {{We have investigated the properties of neutral and charged excitons in single CdSe/ZnSe QD photodiodes by μ-photoluminescence spectroscopy. By applying a bias voltage, we have been able to control the number of electrons in a single QD by shifting the energy levels of the QD with respect to the Fermi level in the back contact. Also the quantum-confined Stark effect was observed as a function of the applied electric field.}},
  author       = {{de Vasconcellos, S. Michaelis and Pawlis, A. and Arens, C. and Panfilova, M. and Zrenner, Artur and Schikora, D. and Lischka, K.}},
  issn         = {{0026-2692}},
  journal      = {{Microelectronics Journal}},
  keywords     = {{CdSe quantum dots, Photodiode, Stark effect}},
  number       = {{2}},
  pages        = {{215--217}},
  publisher    = {{Elsevier BV}},
  title        = {{{Exciton spectroscopy on single CdSe/ZnSe quantum dot photodiodes}}},
  doi          = {{10.1016/j.mejo.2008.07.055}},
  volume       = {{40}},
  year         = {{2008}},
}

@article{4555,
  abstract     = {{Semiconductor microdiscs are promising for applications in photonics and quantum-information processing, such as efficient solid-state-based single-photon emitters. Strain in the multilayer structure of those devices has an important influence on their optical properties. We present measurements of the strain distribution in ZnMgSe/ZnSe microdiscs by means of micro-photoluminescence and micro-Raman imaging. Photoluminescence measurements of microdiscs reveal substantially broadened emission lines with a shift to lower energy at the undercut part of microdiscs, indicating local relaxation in this area. The distribution of the strain in the microdiscs is obtained from an imaging micro-Raman analysis, revealing that the freestanding part of the microdiscs is free of defects.}},
  author       = {{Panfilova, M. and Pawlis, A. and Arens, C. and de Vasconcellos, S. Michaelis and Berth, Gerhard and Hüsch, K.P. and Wiedemeier, V. and Zrenner, Artur and Lischka, K.}},
  issn         = {{0026-2692}},
  journal      = {{Microelectronics Journal}},
  keywords     = {{Raman, Photoluminescence, Microdisc, ZnSe}},
  number       = {{2}},
  pages        = {{221--223}},
  publisher    = {{Elsevier BV}},
  title        = {{{Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs}}},
  doi          = {{10.1016/j.mejo.2008.07.056}},
  volume       = {{40}},
  year         = {{2008}},
}

@article{4557,
  abstract     = {{The optical properties of semiconductor quantum dots are in many respects similar to those of atoms. Since quantum dots can be defined by state-of-the-art semiconductor technologies, they exhibit long-term stability and allow for well-controlled and efficient interactions with both optical and electrical fields. Resonant ps excitation of single quantum dot photodiodes leads to new classes of coherent optoelectronic functions and devices, which exhibit precise state preparation, phase-sensitive optical manipulations and the control of quantum states by electrical fields.}},
  author       = {{Zrenner, Artur and Ester, P and Michaelis de Vasconcellos, S and Hübner, M C and Lackmann, L and Stufler, S and Bichler, M}},
  issn         = {{0953-8984}},
  journal      = {{Journal of Physics: Condensed Matter}},
  number       = {{45}},
  publisher    = {{IOP Publishing}},
  title        = {{{Coherent optoelectronics with single quantum dots}}},
  doi          = {{10.1088/0953-8984/20/45/454210}},
  volume       = {{20}},
  year         = {{2008}},
}

@inbook{7500,
  author       = {{Meier, Cedrik and Lüttjohann, Stephan and Offer, Matthias and Wiggers, Hartmut and Lorke, Axel}},
  booktitle    = {{Advances in Solid State Physics}},
  isbn         = {{9783540858584}},
  issn         = {{1438-4329}},
  pages        = {{79--90}},
  publisher    = {{Springer Berlin Heidelberg}},
  title        = {{{Silicon Nanoparticles: Excitonic Fine Structure and Oscillator Strength}}},
  doi          = {{10.1007/978-3-540-85859-1_7}},
  year         = {{2008}},
}

@article{7640,
  author       = {{Lei, W. and Offer, M. and Lorke, A. and Notthoff, C. and Meier, Cedrik and Wibbelhoff, O. and Wieck, A. D.}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  number       = {{19}},
  publisher    = {{AIP Publishing}},
  title        = {{{Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy}}},
  doi          = {{10.1063/1.2920439}},
  volume       = {{92}},
  year         = {{2008}},
}

@article{8593,
  author       = {{Diaconescu, D. and Goldschmidt, A. and Reuter, Dirk and Wieck, A. D.}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  pages        = {{276--283}},
  title        = {{{Quantum Hall effect in long and in mobility adjusted GaAs/AlxGa1-xAs samples}}},
  doi          = {{10.1002/pssb.200743345}},
  year         = {{2008}},
}

@article{8603,
  author       = {{Lo, F.-Y. and Melnikov, A. and Reuter, Dirk and Cordier, Y. and Wieck, A. D.}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  title        = {{{Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures}}},
  doi          = {{10.1063/1.2899968}},
  year         = {{2008}},
}

@article{8606,
  author       = {{Grbić, B. and Leturcq, R. and Ihn, T. and Ensslin, K. and Blatter, G. and Reuter, Dirk and Wieck, A. D.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  title        = {{{Hysteretic magnetotransport inp-typeAlxGa1−xAsheterostructures with In/Zn/Au Ohmic contacts}}},
  doi          = {{10.1103/physrevb.77.245307}},
  year         = {{2008}},
}

@article{8607,
  author       = {{Hohage, P. E. and Nannen, J. and Halm, S. and Bacher, G. and Wahle, M. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  title        = {{{Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature}}},
  doi          = {{10.1063/1.2943279}},
  year         = {{2008}},
}

@article{8608,
  author       = {{Hövel, S. and Gerhardt, N. C. and Hofmann, M. R. and Lo, F.-Y. and Reuter, Dirk and Wieck, A. D. and Schuster, E. and Keune, W. and Wende, H. and Petracic, O. and Westerholt, K.}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  title        = {{{Electrical detection of photoinduced spins both at room temperature and in remanence}}},
  doi          = {{10.1063/1.2948856}},
  year         = {{2008}},
}

@article{8609,
  author       = {{Hövel, S. and Gerhardt, N. C. and Hofmann, M. R. and Lo, F.-Y. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Schuster, E. and Wende, H. and Keune, W. and Petracic, O. and Westerholt, K.}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  title        = {{{Room temperature electrical spin injection in remanence}}},
  doi          = {{10.1063/1.2957469}},
  year         = {{2008}},
}

@article{8610,
  author       = {{Koop, E. J. and van Wees, B. J. and Reuter, Dirk and Wieck, A. D. and van der Wal, C. H.}},
  issn         = {{0031-9007}},
  journal      = {{Physical Review Letters}},
  title        = {{{Spin Accumulation and Spin Relaxation in a Large Open Quantum Dot}}},
  doi          = {{10.1103/physrevlett.101.056602}},
  year         = {{2008}},
}

@article{8611,
  author       = {{Hugger, S. and Xu, Hengyi and Tarasov, A. and Cerchez, M. and Heinzel, T. and Zozoulenko, I. V. and Reuter, Dirk and Wieck, A. D.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  title        = {{{Magnetic-barrier-induced conductance fluctuations in quantum wires}}},
  doi          = {{10.1103/physrevb.78.165307}},
  year         = {{2008}},
}

@article{8612,
  author       = {{Rizo, P. J. and Pugžlys, A. and Liu, J. and Reuter, Dirk and Wieck, A. D. and van der Wal, C. H. and van Loosdrecht, P. H. M.}},
  issn         = {{0034-6748}},
  journal      = {{Review of Scientific Instruments}},
  title        = {{{Compact cryogenic Kerr microscope for time-resolved studies of electron spin transport in microstructures}}},
  doi          = {{10.1063/1.3046283}},
  year         = {{2008}},
}

@article{8613,
  author       = {{Komijani, Y. and Csontos, M. and Ihn, T. and Ensslin, K. and Reuter, Dirk and Wieck, A. D.}},
  issn         = {{0295-5075}},
  journal      = {{EPL (Europhysics Letters)}},
  title        = {{{Observation of excited states in a p-type GaAs quantum dot}}},
  doi          = {{10.1209/0295-5075/84/57004}},
  year         = {{2008}},
}

@article{8616,
  author       = {{Kaiser, F J and Kohler, S and Hänggi, P and Malecha, M and Ebbecke, J and Wixforth, A and Schumacher, H W and Kästner, B and Reuter, Dirk and Wieck, A D}},
  issn         = {{0953-8984}},
  journal      = {{Journal of Physics: Condensed Matter}},
  title        = {{{Theoretical and experimental investigations of Coulomb blockade in coupled quantum dot systems}}},
  doi          = {{10.1088/0953-8984/20/37/374108}},
  year         = {{2008}},
}

@article{8617,
  author       = {{Hernandez, F. G. G. and Greilich, A. and Brito, F. and Wiemann, M. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Bayer, M.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  title        = {{{Temperature-induced spin-coherence dissipation in quantum dots}}},
  doi          = {{10.1103/physrevb.78.041303}},
  year         = {{2008}},
}

@article{8618,
  author       = {{Scheibner, R and König, M and Reuter, Dirk and Wieck, A D and Gould, C and Buhmann, H and Molenkamp, L W}},
  issn         = {{1367-2630}},
  journal      = {{New Journal of Physics}},
  title        = {{{Quantum dot as thermal rectifier}}},
  doi          = {{10.1088/1367-2630/10/8/083016}},
  year         = {{2008}},
}

@article{4187,
  abstract     = {{We study phonon-assisted electron tunneling in semiconductor quantum dot molecules. In particular, singletsinglet
relaxation in a two-electron-doped structure is considered. The influence of Coulomb interaction is
discussed via comparison with a single-electron system. We find that the relaxation rate reaches similar values
in the two cases but the Coulomb interaction shifts the maximum rates toward larger separations between the
dots. The difference in electron-phonon interaction between deformation potential and piezoelectric coupling is
investigated. We show that the phonon-induced tunneling between two-electron singlet states is a fast process,
taking place on the time scales of the order of a few tens of picoseconds.}},
  author       = {{Grodecka, A. and Machnikowski, P. and Förstner, Jens}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  keywords     = {{tet_topic_qd}},
  number       = {{8}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Phonon-assisted tunneling between singlet states in two-electron quantum dot molecules}}},
  doi          = {{10.1103/physrevb.78.085302}},
  volume       = {{78}},
  year         = {{2008}},
}