@article{8690, author = {{Lüttjohann, Stephan and Meier, Cedrik and Lorke, Axel and Reuter, Dirk and Wieck, Andreas D.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, title = {{{Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra}}}, doi = {{10.1063/1.2112192}}, year = {{2005}}, } @article{8691, author = {{Grbić, Boris and Leturcq, Renaud and Ensslin, Klaus and Reuter, Dirk and Wieck, Andreas D.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, title = {{{Single-hole transistor in p-type GaAs∕AlGaAs heterostructures}}}, doi = {{10.1063/1.2139994}}, year = {{2005}}, } @article{8693, author = {{Knop, M and Richter, M and Maßmann, R and Wieser, U and Kunze, U and Reuter, Dirk and Riedesel, C and Wieck, A D}}, issn = {{0268-1242}}, journal = {{Semiconductor Science and Technology}}, pages = {{814--818}}, title = {{{Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene}}}, doi = {{10.1088/0268-1242/20/8/031}}, year = {{2005}}, } @article{8694, author = {{Scheibner, R. and Buhmann, H. and Reuter, Dirk and Kiselev, M. N. and Molenkamp, L. W.}}, issn = {{0031-9007}}, journal = {{Physical Review Letters}}, title = {{{Thermopower of a Kondo Spin-Correlated Quantum Dot}}}, doi = {{10.1103/physrevlett.95.176602}}, year = {{2005}}, } @article{8708, author = {{SCHULZE-WISCHELER, F. and HOHLS, F. and ZEITLER, U. and Reuter, Dirk and WIECK, A. D. and HAUG, R. J.}}, issn = {{0217-9792}}, journal = {{International Journal of Modern Physics B}}, pages = {{3857--3864}}, title = {{{PHONON EXCITATIONS OF COMPOSITE FERMION LANDAU LEVELS}}}, doi = {{10.1142/s0217979204027608}}, year = {{2005}}, } @article{8713, author = {{SCHULZE-WISCHELER, F. and HOHLS, F. and ZEITLER, U. and Reuter, Dirk and WIECK, A. D. and HAUG, R. J.}}, issn = {{0217-9792}}, journal = {{International Journal of Modern Physics B}}, pages = {{3857--3864}}, title = {{{PHONON EXCITATIONS OF COMPOSITE FERMION LANDAU LEVELS}}}, doi = {{10.1142/s0217979204027608}}, year = {{2005}}, } @article{29691, author = {{Höink, V. and Sacher, Marc and Schmalhorst, J. and Reiss, G. and Engel, D. and Junk, D. and Ehresmann, A.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, keywords = {{Physics and Astronomy (miscellaneous)}}, number = {{15}}, publisher = {{AIP Publishing}}, title = {{{Postannealing of magnetic tunnel junctions with ion-bombardment-modified exchange bias}}}, doi = {{10.1063/1.1899771}}, volume = {{86}}, year = {{2005}}, } @article{29689, author = {{Schmalhorst, J. and Sacher, Marc and Thomas, A. and Brückl, H. and Reiss, G. and Starke, K.}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, keywords = {{General Physics and Astronomy}}, number = {{12}}, publisher = {{AIP Publishing}}, title = {{{X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions}}}, doi = {{10.1063/1.1939086}}, volume = {{97}}, year = {{2005}}, } @article{29688, author = {{Schmalhorst, J. and Sacher, Marc and Thomas, A. and Brückl, H. and Reiss, G. and Starke, K.}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, keywords = {{General Physics and Astronomy}}, number = {{12}}, publisher = {{AIP Publishing}}, title = {{{X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions}}}, doi = {{10.1063/1.1939086}}, volume = {{97}}, year = {{2005}}, } @article{29687, author = {{Sacher, Marc and Sauerwald, J. and Schmalhorst, J. and Reiss, G.}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, keywords = {{General Physics and Astronomy}}, number = {{10}}, publisher = {{AIP Publishing}}, title = {{{Influence of noble-gas ion irradiation on alumina barrier of magnetic tunnel junctions}}}, doi = {{10.1063/1.2134883}}, volume = {{98}}, year = {{2005}}, } @inbook{40475, author = {{Tenberge, Claudia}}, booktitle = {{Förderung des wissenschaftlichen Nachwuchses}}, editor = {{Hartinger, Andreas and Kahlert, Joachim}}, pages = {{219--234}}, title = {{{Zur Förderung der Persönlichkeitsentwicklung in handlungsintensiven Lernformen im naturwissenschaftlich-technischen Sachunterricht. }}}, year = {{2005}}, } @article{43272, abstract = {{Optical interband transitions in a series of In0.23Ga0.77As–GaN𝑥As1−𝑥 quantum well samples are investigated. For changing nitrogen content, a type I-type II transition is identified by a detailed analysis of photoluminescence and photoreflectance spectra. Experimental results are compared systematically with spectra calculated by a microscopic theory. A valence band offset parameter of (1.5±0.5)eV is extracted for this heterostructure system.This work was supported by the Deutsche Forschungsgemeinschaft (Research Group on Metastable Compound Semiconductors and Heterostructures), by AFOSR (F49620-02-1-0380) and the Max-Planck Research Prize of the Max-Planck Society and Humboldt Foundation. We thank Stanko Tomić (Daresbury Laboratory) for fruitful discussions. }}, author = {{Schlichenmaier, C. and Grüning, H. and Thränhardt, A. and Klar, P.J. and Kunert, B. and Volz, K. and Stolz, W. and Heimbrodt, W. and Meier, Torsten and Koch, S.W.}}, journal = {{Applied Physics Letters}}, number = {{8}}, publisher = {{American Institute of Physics}}, title = {{{Type I-type II transition in InGaAs–GaNAs heterostructures}}}, doi = {{American Institute of Physics}}, volume = {{86}}, year = {{2005}}, } @article{43271, abstract = {{The optical and electronic properties of semiconductor heterostructures in the vicinity of photonic crystals are discussed. The theoretical approach provides a self-consistent solution of the dynamics of the electromagnetic field and the material excitations. Due to the influence of the structured dielectric environment on the Coulomb interaction, the exciton resonances and the quasiequilibrium carrier densities in the spatially homogeneous semiconductor become space dependent. It is demonstrated that these inhomogeneities lead to distinct modifications of the optical absorption and gain spectra. As an application, numerically calculated density-dependent optical spectra are analyzed for an array of semiconductor quantum wires which are close to a two-dimensional photonic crystal. The spatial inhomogeneities result in novel excitonic absorption features and modification of the optical gain in these structures.}}, author = {{Reichelt, Matthias and Pasenow, B. and Meier, Torsten and Stroucken, T. and Koch, S.W.}}, journal = {{Physical Review B}}, number = {{3}}, publisher = {{035346}}, title = {{{ Spatially inhomogeneous optical gain in semiconductor photonic-crystal structures}}}, doi = {{10.1103/PhysRevB.71.035346}}, volume = {{71}}, year = {{2005}}, } @article{23506, abstract = {{The optical properties of semiconductor quantum wells embedded in one-dimensional photonic crystal structures are analyzed by a self-consistent solution of Maxwell’s equations and a microscopic many-body theory of the material excitations. For a field mode spectrally below the photonic band edge it is shown that the optical absorption and gain are enhanced, exceeding by more than 1 order of magnitude the values of a homogeneous medium. For the photonic crystal structure inside a microcavity the gain increases superlinearly with the number of wells and for more than five wells exceeds the gain of a corresponding vertical-cavity surface-emitting laser.}}, author = {{Pasenow, Bernhard and Reichelt, Matthias and Stroucken, Tineke and Meier, Torsten and Koch, Stephan W. and Zakharian, Aramis R. and Moloney, Jerome V.}}, issn = {{0740-3224}}, journal = {{Journal of the Optical Society of America B}}, number = {{9}}, pages = {{2039--2048}}, title = {{{Enhanced light-matter interaction in semiconductor heterostructures embedded in one-dimensional photonic crystals}}}, doi = {{10.1364/josab.22.002039}}, volume = {{22}}, year = {{2005}}, } @article{23502, abstract = {{Significant aspects of the light–matter interaction can be strongly modified in suitably designed systems consisting of semiconductor nanostructures and dielectric photonic crystals. To analyze such effects, a microscopic theory is presented, which is capable of describing the optoelectronic properties of such hybrid systems via a self-consistent solution of the dynamics of the optical field and the photoexcitations of the material. The theory is applied to investigate the local excitonic resonances, which arise as a consequence of the modified Coulomb interaction in the vicinity of a structured dielectric medium. The excitation of a coherent superposition of the spatially inhomogeneous optical transitions induces an intricate wave packet dynamics. In the presence of dephasing and relaxation processes, the coherent oscillations are damped and the photoexcited carriers relax into spatially inhomogeneous quasi-equilibrium distributions.}}, author = {{Pasenow, B. and Reichelt, Matthias and Stroucken, T. and Meier, Torsten and Koch, S. W.}}, issn = {{1098-0121}}, journal = {{Physical Review B}}, number = {{19}}, pages = {{195321}}, title = {{{Excitonic wave packet dynamics in semiconductor photonic-crystal structures}}}, doi = {{10.1103/physrevb.71.195321}}, volume = {{71}}, year = {{2005}}, } @article{23504, abstract = {{The coherent optical injection and temporal decay of spin and charge currents in semiconductor heterostructures is described microscopically, including excitonic effects, many-body Coulomb correlations, and the carrier LO-phonon coupling on the second-order Born-Markov level, as well as nonperturbative light-field-induced intraband and interband excitations. A nonmonotonic dependence of the currents on the intensities of the laser beams is predicted. Enhanced damping of the spin current relative to the charge current is obtained as a consequence of Coulomb scattering.}}, author = {{Duc, Huynh Thanh and Meier, Torsten and Koch, S. W.}}, issn = {{0031-9007}}, journal = {{Physical Review Letters}}, number = {{8}}, title = {{{Microscopic Analysis of the Coherent Optical Generation and the Decay of Charge and Spin Currents in Semiconductor Heterostructures}}}, doi = {{10.1103/physrevlett.95.086606}}, volume = {{95}}, year = {{2005}}, } @article{23507, abstract = {{A microscopic model is used to analyze gain and loss properties of (GaIn)(NAs)∕GaAs quantum wells in the 1.3–1.55μm range, including Auger and radiative recombination. The calculations show that, as long as good material quality can be achieved, growing highly compressively strained samples is preferable due to their specific band structure properties. Optimum laser operation is possible slightly above a peak gain of 1000cm−1 ⁠.}}, author = {{Schlichenmaier, C. and Thränhardt, A. and Meier, Torsten and Koch, S. W. and Chow, W. W. and Hader, J. and Moloney, J. V.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{26}}, title = {{{Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range}}}, doi = {{10.1063/1.2149371}}, volume = {{87}}, year = {{2005}}, } @inbook{43275, author = {{Meier, Torsten and Koch, S.W.}}, booktitle = {{Encyclopedia of Modern Optics}}, editor = {{Guenther, B. and Bayvel, L. and Steel, D.G.}}, pages = {{163--173}}, publisher = {{Elsevier}}, title = {{{COHERENT TRANSIENTS | Foundations of Coherent Transients in Semiconductors}}}, doi = {{10.1016/B0-12-369395-0/00754-5}}, year = {{2005}}, } @inproceedings{44121, abstract = {{Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In0.23Ga0.77As/GaNxAs1−x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range.}}, author = {{Meier, Torsten and Schlichenmaier, C. and Thränhardt, A. and Grüning, H. and Klar, Peter J. and Heimbrodt, Wolfram and Koch, S.W. and Chow, Weng W. and Hader, J. and Moloney, Jerome V.}}, booktitle = {{ Quantum Electronics and Laser Science Conference}}, isbn = {{1-55752-770-9}}, location = {{Baltimore, Maryland United States}}, publisher = {{Optical Society of America}}, title = {{{Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5/spl mu/m range}}}, year = {{2005}}, } @article{23501, abstract = {{A set of (Ga0.77In0.23)As/Ga(NxAs1−x) heterostructures is studied by time-resolved photoluminescence. Four samples with nitrogen concentrations from x=0.48% up to x=2.2% are investigated at different temperatures and with different excitation densities. The experiments suggest that the heterostructure band offset is type I for x=0.48% and type II for x=2.2%. The situation is more complex for x=0.72% and x=1.25%, since these samples are close to the transition from type I to type II. The experimental findings are analyzed using a detailed microscopic theory. Numerical calculations describe the measured data well. In particular, the interpretation of the experimental results concerning the band alignment is confirmed by the theoretical analysis.}}, author = {{Hantke, K. and Heber, J. D. and Schlichenmaier, C. and Thränhardt, A. and Meier, Torsten and Kunert, B. and Volz, K. and Stolz, W. and Koch, S. W. and Rühle, W. W.}}, issn = {{1098-0121}}, journal = {{Physical Review B}}, number = {{16}}, title = {{{Time-resolved photoluminescence of type-I and type-II (GaIn) As/Ga (NAs) heterostructures}}}, doi = {{10.1103/physrevb.71.165320}}, volume = {{71}}, year = {{2005}}, }