@inproceedings{44121,
  abstract     = {{Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In0.23Ga0.77As/GaNxAs1−x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range.}},
  author       = {{Meier, Torsten and Schlichenmaier, C. and Thränhardt, A. and Grüning, H. and Klar, Peter J. and Heimbrodt, Wolfram and Koch, S.W. and Chow, Weng W. and Hader, J. and Moloney, Jerome V.}},
  booktitle    = {{ Quantum Electronics and Laser Science Conference}},
  isbn         = {{1-55752-770-9}},
  location     = {{Baltimore, Maryland United States}},
  publisher    = {{Optical Society of America}},
  title        = {{{Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5/spl mu/m range}}},
  year         = {{2005}},
}

@article{23501,
  abstract     = {{A set of (Ga0.77In0.23)As/Ga(NxAs1−x) heterostructures is studied by time-resolved photoluminescence. Four samples with nitrogen concentrations from x=0.48% up to x=2.2% are investigated at different temperatures and with different excitation densities. The experiments suggest that the heterostructure band offset is type I for x=0.48% and type II for x=2.2%. The situation is more complex for x=0.72% and x=1.25%, since these samples are close to the transition from type I to type II. The experimental findings are analyzed using a detailed microscopic theory. Numerical calculations describe the measured data well. In particular, the interpretation of the experimental results concerning the band alignment is confirmed by the theoretical analysis.}},
  author       = {{Hantke, K. and Heber, J. D. and Schlichenmaier, C. and Thränhardt, A. and Meier, Torsten and Kunert, B. and Volz, K. and Stolz, W. and Koch, S. W. and Rühle, W. W.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{16}},
  title        = {{{Time-resolved photoluminescence of type-I and type-II  (GaIn) As/Ga (NAs)  heterostructures}}},
  doi          = {{10.1103/physrevb.71.165320}},
  volume       = {{71}},
  year         = {{2005}},
}

@article{23496,
  abstract     = {{The optical and electronic properties of semiconductor heterostructures in the vicinity of photonic crystals are discussed. The theoretical approach provides a self-consistent solution of the dynamics of the electromagnetic field and the material excitations. Due to the influence of the structured dielectric environment on the Coulomb interaction, the exciton resonances and the quasiequilibrium carrier densities in the spatially homogeneous semiconductor become space dependent. It is demonstrated that these inhomogeneities lead to distinct modifications of the optical absorption and gain spectra. As an application, numerically calculated density-dependent optical spectra are analyzed for an array of semiconductor quantum wires which are close to a two-dimensional photonic crystal. The spatial inhomogeneities result in novel excitonic absorption features and modification of the optical gain in these structures.}},
  author       = {{Reichelt, Matthias and Pasenow, B. and Meier, Torsten and Stroucken, T. and Koch, S. W.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{3}},
  title        = {{{Spatially inhomogeneous optical gain in semiconductor photonic-crystal structures}}},
  doi          = {{10.1103/physrevb.71.035346}},
  volume       = {{71}},
  year         = {{2005}},
}

@article{23498,
  abstract     = {{The ultrafast dynamics of photoexcitations at silicon surfaces is investigated using a surface-sensitive purely optical technique. In the experiments, the diffracted second harmonic generated by sequences of ultrashort laser pulses is detected as a function of the time delay between the pulses. It is demonstrated that this five-wave-mixing technique can be used to measure the temporal evolution of the optical polarization and the photoexcited populations at the surface. The experimental results can be reproduced by numerical solutions of optical Bloch equations. The theoretical analysis allows one to investigate which dephasing times and relaxation processes are compatible with experiment. Furthermore, it is outlined how one can describe optical nonlinearities at surfaces using a microscopic theory within the framework of semiconductor Bloch equations.}},
  author       = {{Meier, Torsten and Reichelt, Matthias and Koch, S W and Höfer, U}},
  issn         = {{0953-8984}},
  journal      = {{Journal of Physics: Condensed Matter}},
  number       = {{8}},
  pages        = {{S221--S244}},
  title        = {{{Femtosecond time-resolved five-wave mixing at silicon surfaces}}},
  doi          = {{10.1088/0953-8984/17/8/003}},
  volume       = {{17}},
  year         = {{2005}},
}

@article{23499,
  abstract     = {{The ultrafast dynamics of photoexcitations at silicon surfaces is investigated using a surface-sensitive purely optical technique. In the experiments, the diffracted second harmonic generated by sequences of ultrashort laser pulses is detected as a function of the time delay between the pulses. It is demonstrated that this five-wave-mixing technique can be used to measure the temporal evolution of the optical polarization and the photoexcited populations at the surface. The experimental results can be reproduced by numerical solutions of optical Bloch equations. The theoretical analysis allows one to investigate which dephasing times and relaxation processes are compatible with experiment. Furthermore, it is outlined how one can describe optical nonlinearities at surfaces using a microscopic theory within the framework of semiconductor Bloch equations.}},
  author       = {{Meier, Torsten and Reichelt, Matthias and Koch, S W and Höfer, U}},
  issn         = {{0953-8984}},
  journal      = {{Journal of Physics: Condensed Matter}},
  number       = {{8}},
  pages        = {{S221--S244}},
  title        = {{{Femtosecond time-resolved five-wave mixing at silicon surfaces}}},
  doi          = {{10.1088/0953-8984/17/8/003}},
  volume       = {{17}},
  year         = {{2005}},
}

@inproceedings{44297,
  author       = {{Meier, Torsten and Reichelt, Matthias and Pasenow, B. and Stroucken, T. and Koch, S.W.}},
  booktitle    = {{2005 annual conference of the German Physical Society (DPG) during the World year of physics}},
  location     = {{Berlin, Germany}},
  title        = {{{Optical properties of semiconductor photonic-crystal structures: spatially-inhomogeneous excitonic resonances and optical gain}}},
  volume       = {{40}},
  year         = {{2005}},
}

@article{13709,
  author       = {{Hahn, P. H. and Schmidt, Wolf Gero and Seino, K. and Preuss, M. and Bechstedt, F. and Bernholc, J.}},
  issn         = {{0031-9007}},
  journal      = {{Physical Review Letters}},
  pages        = {{037404}},
  title        = {{{Optical Absorption of Water: Coulomb Effects versus Hydrogen Bonding}}},
  doi          = {{10.1103/physrevlett.94.037404}},
  volume       = {{94}},
  year         = {{2005}},
}

@article{13706,
  author       = {{Hermann, A. and Schmidt, Wolf Gero and Bechstedt, F.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  title        = {{{Optical response ofπ-conjugated molecular monolayer adsorbed on the semiconductor Si(001) surface: A first-principles study}}},
  doi          = {{10.1103/physrevb.71.153311}},
  volume       = {{71}},
  year         = {{2005}},
}

@article{13699,
  author       = {{Hahn, P. H. and Seino, K. and Schmidt, Wolf Gero and Furthmüller, J. and Bechstedt, F.}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  number       = {{13}},
  pages        = {{2720--2728}},
  title        = {{{Quasiparticle and excitonic effects in the optical spectra of diamond, SiC, Si, GaP, GaAs, InP, and AlN}}},
  doi          = {{10.1002/pssb.200541128}},
  volume       = {{242}},
  year         = {{2005}},
}

@article{13700,
  author       = {{Esser, N. and Rakel, M. and Cobet, C. and Schmidt, Wolf Gero and Braun, W. and Cardona, M.}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  number       = {{13}},
  pages        = {{2601--2609}},
  title        = {{{VUV-ellipsometry on GaN: Probing conduction band properties by core level excitations}}},
  doi          = {{10.1002/pssb.200541315}},
  volume       = {{242}},
  year         = {{2005}},
}

@article{13696,
  author       = {{Bechstedt, F. and Seino, K. and Hahn, P. H. and Schmidt, Wolf Gero}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{24}},
  title        = {{{Quasiparticle bands and optical spectra of highly ionic crystals: AlN and NaCl}}},
  doi          = {{10.1103/physrevb.72.245114}},
  volume       = {{72}},
  year         = {{2005}},
}

@article{13705,
  author       = {{Leitsmann, R. and Schmidt, Wolf Gero and Hahn, P. H. and Bechstedt, F.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  title        = {{{Second-harmonic polarizability including electron-hole attraction from band-structure theory}}},
  doi          = {{10.1103/physrevb.71.195209}},
  volume       = {{71}},
  year         = {{2005}},
}

@article{13701,
  author       = {{Fuchs, F. and Schmidt, Wolf Gero and Bechstedt, F.}},
  issn         = {{1520-6106}},
  journal      = {{The Journal of Physical Chemistry B}},
  pages        = {{17649--17653}},
  title        = {{{Initial Stage of Si(001) Surface Oxidation from First-Principles Calculations}}},
  doi          = {{10.1021/jp0501087}},
  volume       = {{109}},
  year         = {{2005}},
}

@article{13697,
  author       = {{Ortmann, F. and Schmidt, Wolf Gero and Bechstedt, F.}},
  issn         = {{0031-9007}},
  journal      = {{Physical Review Letters}},
  number       = {{18}},
  title        = {{{Attracted by Long-Range Electron Correlation: Adenine on Graphite}}},
  doi          = {{10.1103/physrevlett.95.186101}},
  volume       = {{95}},
  year         = {{2005}},
}

@article{13702,
  author       = {{Fuchs, F. and Schmidt, Wolf Gero and Bechstedt, F.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{7}},
  title        = {{{Understanding the optical anisotropy of oxidized Si(001) surfaces}}},
  doi          = {{10.1103/physrevb.72.075353}},
  volume       = {{72}},
  year         = {{2005}},
}

@article{13704,
  author       = {{Seino, K. and Schmidt, Wolf Gero}},
  issn         = {{0039-6028}},
  journal      = {{Surface Science}},
  pages        = {{191--196}},
  title        = {{{Conformation-selective adsorption of 2,3-butanediol on Si(001)}}},
  doi          = {{10.1016/j.susc.2005.04.029}},
  year         = {{2005}},
}

@article{13707,
  author       = {{Hermann, Andreas and Schmidt, Wolf Gero and Bechstedt, Friedhelm}},
  issn         = {{1520-6106}},
  journal      = {{The Journal of Physical Chemistry B}},
  pages        = {{7928--7933}},
  title        = {{{Phenanthrenequinone Adsorbed on Si(001):  Geometries, Electronic Properties, and Optical Response}}},
  doi          = {{10.1021/jp0500182}},
  volume       = {{109}},
  year         = {{2005}},
}

@article{13698,
  author       = {{Schmidt, Wolf Gero}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  number       = {{13}},
  pages        = {{2751--2764}},
  title        = {{{Calculation of reflectance anisotropy for semiconductor surface exploration}}},
  doi          = {{10.1002/pssb.200541112}},
  volume       = {{242}},
  year         = {{2005}},
}

@article{13703,
  author       = {{Preuss, M. and Schmidt, Wolf Gero and Bechstedt, F.}},
  issn         = {{0031-9007}},
  journal      = {{Physical Review Letters}},
  title        = {{{Coulombic Amino Group-Metal Bonding: Adsorption of Adenine on Cu(110)}}},
  doi          = {{10.1103/physrevlett.94.236102}},
  volume       = {{94}},
  year         = {{2005}},
}

@article{13846,
  author       = {{Hahn, P. H. and Schmidt, Wolf Gero and Bechstedt, F.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{24}},
  title        = {{{Molecular electronic excitations calculated from a solid-state approach: Methodology and numerics}}},
  doi          = {{10.1103/physrevb.72.245425}},
  volume       = {{72}},
  year         = {{2005}},
}