[{"language":[{"iso":"eng"}],"article_number":"033010","user_id":"27150","department":[{"_id":"15"}],"_id":"21044","status":"public","type":"journal_article","publication":"New Journal of Physics","doi":"10.1088/1367-2630/15/3/033010","title":"An efficient integrated two-color source for heralded single photons","date_created":"2021-01-20T08:56:02Z","author":[{"first_name":"S","last_name":"Krapick","full_name":"Krapick, S"},{"first_name":"Harald","last_name":"Herrmann","id":"216","full_name":"Herrmann, Harald"},{"full_name":"Quiring, V","last_name":"Quiring","first_name":"V"},{"first_name":"Benjamin","orcid":"0000-0003-4140-0556 ","last_name":"Brecht","id":"27150","full_name":"Brecht, Benjamin"},{"first_name":"H","last_name":"Suche","full_name":"Suche, H"},{"last_name":"Silberhorn","id":"26263","full_name":"Silberhorn, Christine","first_name":"Christine"}],"volume":15,"date_updated":"2022-01-06T06:54:42Z","citation":{"chicago":"Krapick, S, Harald Herrmann, V Quiring, Benjamin Brecht, H Suche, and Christine Silberhorn. “An Efficient Integrated Two-Color Source for Heralded Single Photons.” <i>New Journal of Physics</i> 15 (2013). <a href=\"https://doi.org/10.1088/1367-2630/15/3/033010\">https://doi.org/10.1088/1367-2630/15/3/033010</a>.","ieee":"S. Krapick, H. Herrmann, V. Quiring, B. Brecht, H. Suche, and C. Silberhorn, “An efficient integrated two-color source for heralded single photons,” <i>New Journal of Physics</i>, vol. 15, 2013.","ama":"Krapick S, Herrmann H, Quiring V, Brecht B, Suche H, Silberhorn C. An efficient integrated two-color source for heralded single photons. <i>New Journal of Physics</i>. 2013;15. doi:<a href=\"https://doi.org/10.1088/1367-2630/15/3/033010\">10.1088/1367-2630/15/3/033010</a>","apa":"Krapick, S., Herrmann, H., Quiring, V., Brecht, B., Suche, H., &#38; Silberhorn, C. (2013). An efficient integrated two-color source for heralded single photons. <i>New Journal of Physics</i>, <i>15</i>. <a href=\"https://doi.org/10.1088/1367-2630/15/3/033010\">https://doi.org/10.1088/1367-2630/15/3/033010</a>","short":"S. Krapick, H. Herrmann, V. Quiring, B. Brecht, H. Suche, C. Silberhorn, New Journal of Physics 15 (2013).","mla":"Krapick, S., et al. “An Efficient Integrated Two-Color Source for Heralded Single Photons.” <i>New Journal of Physics</i>, vol. 15, 033010, 2013, doi:<a href=\"https://doi.org/10.1088/1367-2630/15/3/033010\">10.1088/1367-2630/15/3/033010</a>.","bibtex":"@article{Krapick_Herrmann_Quiring_Brecht_Suche_Silberhorn_2013, title={An efficient integrated two-color source for heralded single photons}, volume={15}, DOI={<a href=\"https://doi.org/10.1088/1367-2630/15/3/033010\">10.1088/1367-2630/15/3/033010</a>}, number={033010}, journal={New Journal of Physics}, author={Krapick, S and Herrmann, Harald and Quiring, V and Brecht, Benjamin and Suche, H and Silberhorn, Christine}, year={2013} }"},"intvolume":"        15","year":"2013","publication_status":"published","publication_identifier":{"issn":["1367-2630"]}},{"title":"Evidences of defect contribution in magnetically ordered Sm-implanted GaN","doi":"10.1016/j.cap.2013.11.051","publisher":"Elsevier BV","date_updated":"2022-01-06T07:03:30Z","author":[{"first_name":"Fang-Yuh","full_name":"Lo, Fang-Yuh","last_name":"Lo"},{"first_name":"Jhong-Yu","full_name":"Guo, Jhong-Yu","last_name":"Guo"},{"first_name":"Cheng-De","last_name":"Huang","full_name":"Huang, Cheng-De"},{"first_name":"Kai-Chieh","last_name":"Chou","full_name":"Chou, Kai-Chieh"},{"first_name":"Hsiang-Lin","full_name":"Liu, Hsiang-Lin","last_name":"Liu"},{"first_name":"Verena","last_name":"Ney","full_name":"Ney, Verena"},{"last_name":"Ney","full_name":"Ney, Andreas","first_name":"Andreas"},{"first_name":"Ming-Yau","last_name":"Chern","full_name":"Chern, Ming-Yau"},{"first_name":"Stepan","last_name":"Shvarkov","full_name":"Shvarkov, Stepan"},{"last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk"},{"last_name":"Wieck","full_name":"Wieck, Andreas D.","first_name":"Andreas D."},{"first_name":"Sébastien","last_name":"Pezzagna","full_name":"Pezzagna, Sébastien"},{"first_name":"Jean","full_name":"Massies, Jean","last_name":"Massies"}],"date_created":"2019-01-29T12:43:55Z","volume":14,"year":"2013","citation":{"ama":"Lo F-Y, Guo J-Y, Huang C-D, et al. Evidences of defect contribution in magnetically ordered Sm-implanted GaN. <i>Current Applied Physics</i>. 2013;14:S7-S11. doi:<a href=\"https://doi.org/10.1016/j.cap.2013.11.051\">10.1016/j.cap.2013.11.051</a>","chicago":"Lo, Fang-Yuh, Jhong-Yu Guo, Cheng-De Huang, Kai-Chieh Chou, Hsiang-Lin Liu, Verena Ney, Andreas Ney, et al. “Evidences of Defect Contribution in Magnetically Ordered Sm-Implanted GaN.” <i>Current Applied Physics</i> 14 (2013): S7–11. <a href=\"https://doi.org/10.1016/j.cap.2013.11.051\">https://doi.org/10.1016/j.cap.2013.11.051</a>.","ieee":"F.-Y. Lo <i>et al.</i>, “Evidences of defect contribution in magnetically ordered Sm-implanted GaN,” <i>Current Applied Physics</i>, vol. 14, pp. S7–S11, 2013.","mla":"Lo, Fang-Yuh, et al. “Evidences of Defect Contribution in Magnetically Ordered Sm-Implanted GaN.” <i>Current Applied Physics</i>, vol. 14, Elsevier BV, 2013, pp. S7–11, doi:<a href=\"https://doi.org/10.1016/j.cap.2013.11.051\">10.1016/j.cap.2013.11.051</a>.","bibtex":"@article{Lo_Guo_Huang_Chou_Liu_Ney_Ney_Chern_Shvarkov_Reuter_et al._2013, title={Evidences of defect contribution in magnetically ordered Sm-implanted GaN}, volume={14}, DOI={<a href=\"https://doi.org/10.1016/j.cap.2013.11.051\">10.1016/j.cap.2013.11.051</a>}, journal={Current Applied Physics}, publisher={Elsevier BV}, author={Lo, Fang-Yuh and Guo, Jhong-Yu and Huang, Cheng-De and Chou, Kai-Chieh and Liu, Hsiang-Lin and Ney, Verena and Ney, Andreas and Chern, Ming-Yau and Shvarkov, Stepan and Reuter, Dirk and et al.}, year={2013}, pages={S7–S11} }","short":"F.-Y. Lo, J.-Y. Guo, C.-D. Huang, K.-C. Chou, H.-L. Liu, V. Ney, A. Ney, M.-Y. Chern, S. Shvarkov, D. Reuter, A.D. Wieck, S. Pezzagna, J. Massies, Current Applied Physics 14 (2013) S7–S11.","apa":"Lo, F.-Y., Guo, J.-Y., Huang, C.-D., Chou, K.-C., Liu, H.-L., Ney, V., … Massies, J. (2013). Evidences of defect contribution in magnetically ordered Sm-implanted GaN. <i>Current Applied Physics</i>, <i>14</i>, S7–S11. <a href=\"https://doi.org/10.1016/j.cap.2013.11.051\">https://doi.org/10.1016/j.cap.2013.11.051</a>"},"intvolume":"        14","page":"S7-S11","publication_status":"published","publication_identifier":{"issn":["1567-1739"]},"language":[{"iso":"eng"}],"_id":"7236","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"status":"public","type":"journal_article","publication":"Current Applied Physics"},{"publication":"Physical Review B","type":"journal_article","status":"public","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","_id":"7239","language":[{"iso":"eng"}],"issue":"20","publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","intvolume":"        88","citation":{"ieee":"A. Steinhoff <i>et al.</i>, “Combined influence of Coulomb interaction and polarons on the carrier dynamics in InGaAs quantum dots,” <i>Physical Review B</i>, vol. 88, no. 20, 2013.","chicago":"Steinhoff, A., H. Kurtze, P. Gartner, M. Florian, Dirk Reuter, A. D. Wieck, M. Bayer, and F. Jahnke. “Combined Influence of Coulomb Interaction and Polarons on the Carrier Dynamics in InGaAs Quantum Dots.” <i>Physical Review B</i> 88, no. 20 (2013). <a href=\"https://doi.org/10.1103/physrevb.88.205309\">https://doi.org/10.1103/physrevb.88.205309</a>.","ama":"Steinhoff A, Kurtze H, Gartner P, et al. Combined influence of Coulomb interaction and polarons on the carrier dynamics in InGaAs quantum dots. <i>Physical Review B</i>. 2013;88(20). doi:<a href=\"https://doi.org/10.1103/physrevb.88.205309\">10.1103/physrevb.88.205309</a>","bibtex":"@article{Steinhoff_Kurtze_Gartner_Florian_Reuter_Wieck_Bayer_Jahnke_2013, title={Combined influence of Coulomb interaction and polarons on the carrier dynamics in InGaAs quantum dots}, volume={88}, DOI={<a href=\"https://doi.org/10.1103/physrevb.88.205309\">10.1103/physrevb.88.205309</a>}, number={20}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Steinhoff, A. and Kurtze, H. and Gartner, P. and Florian, M. and Reuter, Dirk and Wieck, A. D. and Bayer, M. and Jahnke, F.}, year={2013} }","mla":"Steinhoff, A., et al. “Combined Influence of Coulomb Interaction and Polarons on the Carrier Dynamics in InGaAs Quantum Dots.” <i>Physical Review B</i>, vol. 88, no. 20, American Physical Society (APS), 2013, doi:<a href=\"https://doi.org/10.1103/physrevb.88.205309\">10.1103/physrevb.88.205309</a>.","short":"A. Steinhoff, H. Kurtze, P. Gartner, M. Florian, D. Reuter, A.D. Wieck, M. Bayer, F. Jahnke, Physical Review B 88 (2013).","apa":"Steinhoff, A., Kurtze, H., Gartner, P., Florian, M., Reuter, D., Wieck, A. D., … Jahnke, F. (2013). Combined influence of Coulomb interaction and polarons on the carrier dynamics in InGaAs quantum dots. <i>Physical Review B</i>, <i>88</i>(20). <a href=\"https://doi.org/10.1103/physrevb.88.205309\">https://doi.org/10.1103/physrevb.88.205309</a>"},"year":"2013","volume":88,"author":[{"first_name":"A.","full_name":"Steinhoff, A.","last_name":"Steinhoff"},{"first_name":"H.","last_name":"Kurtze","full_name":"Kurtze, H."},{"last_name":"Gartner","full_name":"Gartner, P.","first_name":"P."},{"last_name":"Florian","full_name":"Florian, M.","first_name":"M."},{"first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter"},{"first_name":"A. D.","last_name":"Wieck","full_name":"Wieck, A. D."},{"first_name":"M.","full_name":"Bayer, M.","last_name":"Bayer"},{"full_name":"Jahnke, F.","last_name":"Jahnke","first_name":"F."}],"date_created":"2019-01-29T14:01:47Z","date_updated":"2022-01-06T07:03:30Z","publisher":"American Physical Society (APS)","doi":"10.1103/physrevb.88.205309","title":"Combined influence of Coulomb interaction and polarons on the carrier dynamics in InGaAs quantum dots"},{"status":"public","publication":"Physical Review B","type":"journal_article","language":[{"iso":"eng"}],"department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","_id":"7240","intvolume":"        88","citation":{"ieee":"T. Henn, T. Kiessling, W. Ossau, L. W. Molenkamp, D. Reuter, and A. D. Wieck, “Picosecond real-space imaging of electron spin diffusion in GaAs,” <i>Physical Review B</i>, vol. 88, no. 19, 2013.","chicago":"Henn, T., T. Kiessling, W. Ossau, L. W. Molenkamp, Dirk Reuter, and A. D. Wieck. “Picosecond Real-Space Imaging of Electron Spin Diffusion in GaAs.” <i>Physical Review B</i> 88, no. 19 (2013). <a href=\"https://doi.org/10.1103/physrevb.88.195202\">https://doi.org/10.1103/physrevb.88.195202</a>.","ama":"Henn T, Kiessling T, Ossau W, Molenkamp LW, Reuter D, Wieck AD. Picosecond real-space imaging of electron spin diffusion in GaAs. <i>Physical Review B</i>. 2013;88(19). doi:<a href=\"https://doi.org/10.1103/physrevb.88.195202\">10.1103/physrevb.88.195202</a>","apa":"Henn, T., Kiessling, T., Ossau, W., Molenkamp, L. W., Reuter, D., &#38; Wieck, A. D. (2013). Picosecond real-space imaging of electron spin diffusion in GaAs. <i>Physical Review B</i>, <i>88</i>(19). <a href=\"https://doi.org/10.1103/physrevb.88.195202\">https://doi.org/10.1103/physrevb.88.195202</a>","bibtex":"@article{Henn_Kiessling_Ossau_Molenkamp_Reuter_Wieck_2013, title={Picosecond real-space imaging of electron spin diffusion in GaAs}, volume={88}, DOI={<a href=\"https://doi.org/10.1103/physrevb.88.195202\">10.1103/physrevb.88.195202</a>}, number={19}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Henn, T. and Kiessling, T. and Ossau, W. and Molenkamp, L. W. and Reuter, Dirk and Wieck, A. D.}, year={2013} }","mla":"Henn, T., et al. “Picosecond Real-Space Imaging of Electron Spin Diffusion in GaAs.” <i>Physical Review B</i>, vol. 88, no. 19, American Physical Society (APS), 2013, doi:<a href=\"https://doi.org/10.1103/physrevb.88.195202\">10.1103/physrevb.88.195202</a>.","short":"T. Henn, T. Kiessling, W. Ossau, L.W. Molenkamp, D. Reuter, A.D. Wieck, Physical Review B 88 (2013)."},"year":"2013","issue":"19","publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","doi":"10.1103/physrevb.88.195202","title":"Picosecond real-space imaging of electron spin diffusion in GaAs","volume":88,"date_created":"2019-01-29T14:04:19Z","author":[{"first_name":"T.","full_name":"Henn, T.","last_name":"Henn"},{"last_name":"Kiessling","full_name":"Kiessling, T.","first_name":"T."},{"first_name":"W.","last_name":"Ossau","full_name":"Ossau, W."},{"last_name":"Molenkamp","full_name":"Molenkamp, L. W.","first_name":"L. W."},{"last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk"},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."}],"publisher":"American Physical Society (APS)","date_updated":"2022-01-06T07:03:30Z"},{"doi":"10.1103/physrevb.88.085303","title":"Hot carrier effects on the magneto-optical detection of electron spins in GaAs","author":[{"first_name":"T.","last_name":"Henn","full_name":"Henn, T."},{"first_name":"A.","full_name":"Heckel, A.","last_name":"Heckel"},{"last_name":"Beck","full_name":"Beck, M.","first_name":"M."},{"full_name":"Kiessling, T.","last_name":"Kiessling","first_name":"T."},{"full_name":"Ossau, W.","last_name":"Ossau","first_name":"W."},{"last_name":"Molenkamp","full_name":"Molenkamp, L. W.","first_name":"L. W."},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."}],"date_created":"2019-01-30T12:54:43Z","volume":88,"publisher":"American Physical Society (APS)","date_updated":"2022-01-06T07:03:30Z","citation":{"ama":"Henn T, Heckel A, Beck M, et al. Hot carrier effects on the magneto-optical detection of electron spins in GaAs. <i>Physical Review B</i>. 2013;88(8). doi:<a href=\"https://doi.org/10.1103/physrevb.88.085303\">10.1103/physrevb.88.085303</a>","chicago":"Henn, T., A. Heckel, M. Beck, T. Kiessling, W. Ossau, L. W. Molenkamp, Dirk Reuter, and A. D. Wieck. “Hot Carrier Effects on the Magneto-Optical Detection of Electron Spins in GaAs.” <i>Physical Review B</i> 88, no. 8 (2013). <a href=\"https://doi.org/10.1103/physrevb.88.085303\">https://doi.org/10.1103/physrevb.88.085303</a>.","ieee":"T. Henn <i>et al.</i>, “Hot carrier effects on the magneto-optical detection of electron spins in GaAs,” <i>Physical Review B</i>, vol. 88, no. 8, 2013.","bibtex":"@article{Henn_Heckel_Beck_Kiessling_Ossau_Molenkamp_Reuter_Wieck_2013, title={Hot carrier effects on the magneto-optical detection of electron spins in GaAs}, volume={88}, DOI={<a href=\"https://doi.org/10.1103/physrevb.88.085303\">10.1103/physrevb.88.085303</a>}, number={8}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Henn, T. and Heckel, A. and Beck, M. and Kiessling, T. and Ossau, W. and Molenkamp, L. W. and Reuter, Dirk and Wieck, A. D.}, year={2013} }","short":"T. Henn, A. Heckel, M. Beck, T. Kiessling, W. Ossau, L.W. Molenkamp, D. Reuter, A.D. Wieck, Physical Review B 88 (2013).","mla":"Henn, T., et al. “Hot Carrier Effects on the Magneto-Optical Detection of Electron Spins in GaAs.” <i>Physical Review B</i>, vol. 88, no. 8, American Physical Society (APS), 2013, doi:<a href=\"https://doi.org/10.1103/physrevb.88.085303\">10.1103/physrevb.88.085303</a>.","apa":"Henn, T., Heckel, A., Beck, M., Kiessling, T., Ossau, W., Molenkamp, L. W., … Wieck, A. D. (2013). Hot carrier effects on the magneto-optical detection of electron spins in GaAs. <i>Physical Review B</i>, <i>88</i>(8). <a href=\"https://doi.org/10.1103/physrevb.88.085303\">https://doi.org/10.1103/physrevb.88.085303</a>"},"intvolume":"        88","year":"2013","issue":"8","publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"language":[{"iso":"eng"}],"user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"7258","status":"public","type":"journal_article","publication":"Physical Review B"},{"type":"journal_article","publication":"Applied Physics Letters","status":"public","_id":"7259","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"article_number":"092401","language":[{"iso":"eng"}],"publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"issue":"9","year":"2013","citation":{"apa":"Buß, J. H., Rudolph, J., Shvarkov, S., Semond, F., Reuter, D., Wieck, A. D., &#38; Hägele, D. (2013). Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons. <i>Applied Physics Letters</i>, <i>103</i>(9). <a href=\"https://doi.org/10.1063/1.4819767\">https://doi.org/10.1063/1.4819767</a>","mla":"Buß, J. H., et al. “Magneto-Optical Studies of Gd-Implanted GaN: No Spin Alignment of Conduction Band Electrons.” <i>Applied Physics Letters</i>, vol. 103, no. 9, 092401, AIP Publishing, 2013, doi:<a href=\"https://doi.org/10.1063/1.4819767\">10.1063/1.4819767</a>.","bibtex":"@article{Buß_Rudolph_Shvarkov_Semond_Reuter_Wieck_Hägele_2013, title={Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons}, volume={103}, DOI={<a href=\"https://doi.org/10.1063/1.4819767\">10.1063/1.4819767</a>}, number={9092401}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Buß, J. H. and Rudolph, J. and Shvarkov, S. and Semond, F. and Reuter, Dirk and Wieck, A. D. and Hägele, D.}, year={2013} }","short":"J.H. Buß, J. Rudolph, S. Shvarkov, F. Semond, D. Reuter, A.D. Wieck, D. Hägele, Applied Physics Letters 103 (2013).","chicago":"Buß, J. H., J. Rudolph, S. Shvarkov, F. Semond, Dirk Reuter, A. D. Wieck, and D. Hägele. “Magneto-Optical Studies of Gd-Implanted GaN: No Spin Alignment of Conduction Band Electrons.” <i>Applied Physics Letters</i> 103, no. 9 (2013). <a href=\"https://doi.org/10.1063/1.4819767\">https://doi.org/10.1063/1.4819767</a>.","ieee":"J. H. Buß <i>et al.</i>, “Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons,” <i>Applied Physics Letters</i>, vol. 103, no. 9, 2013.","ama":"Buß JH, Rudolph J, Shvarkov S, et al. Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons. <i>Applied Physics Letters</i>. 2013;103(9). doi:<a href=\"https://doi.org/10.1063/1.4819767\">10.1063/1.4819767</a>"},"intvolume":"       103","publisher":"AIP Publishing","date_updated":"2022-01-06T07:03:30Z","date_created":"2019-01-30T12:56:20Z","author":[{"first_name":"J. H.","full_name":"Buß, J. H.","last_name":"Buß"},{"first_name":"J.","full_name":"Rudolph, J.","last_name":"Rudolph"},{"last_name":"Shvarkov","full_name":"Shvarkov, S.","first_name":"S."},{"last_name":"Semond","full_name":"Semond, F.","first_name":"F."},{"last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763","first_name":"Dirk"},{"last_name":"Wieck","full_name":"Wieck, A. D.","first_name":"A. D."},{"last_name":"Hägele","full_name":"Hägele, D.","first_name":"D."}],"volume":103,"title":"Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons","doi":"10.1063/1.4819767"},{"publication":"Journal of Physics: Condensed Matter","type":"journal_article","status":"public","_id":"7260","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","article_number":"325304","language":[{"iso":"eng"}],"publication_identifier":{"issn":["0953-8984","1361-648X"]},"publication_status":"published","issue":"32","year":"2013","intvolume":"        25","citation":{"apa":"Carrad, D. J., Burke, A. M., Reece, P. J., Lyttleton, R. W., Waddington, D. E. J., Rai, A., … Micolich, A. P. (2013). The effect of (NH4)2Sxpassivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices. <i>Journal of Physics: Condensed Matter</i>, <i>25</i>(32). <a href=\"https://doi.org/10.1088/0953-8984/25/32/325304\">https://doi.org/10.1088/0953-8984/25/32/325304</a>","mla":"Carrad, D. J., et al. “The Effect of (NH4)2Sxpassivation on the (311)A GaAs Surface and Its Use in AlGaAs/GaAs Heterostructure Devices.” <i>Journal of Physics: Condensed Matter</i>, vol. 25, no. 32, 325304, IOP Publishing, 2013, doi:<a href=\"https://doi.org/10.1088/0953-8984/25/32/325304\">10.1088/0953-8984/25/32/325304</a>.","bibtex":"@article{Carrad_Burke_Reece_Lyttleton_Waddington_Rai_Reuter_Wieck_Micolich_2013, title={The effect of (NH4)2Sxpassivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices}, volume={25}, DOI={<a href=\"https://doi.org/10.1088/0953-8984/25/32/325304\">10.1088/0953-8984/25/32/325304</a>}, number={32325304}, journal={Journal of Physics: Condensed Matter}, publisher={IOP Publishing}, author={Carrad, D J and Burke, A M and Reece, P J and Lyttleton, R W and Waddington, D E J and Rai, A and Reuter, Dirk and Wieck, A D and Micolich, A P}, year={2013} }","short":"D.J. Carrad, A.M. Burke, P.J. Reece, R.W. Lyttleton, D.E.J. Waddington, A. Rai, D. Reuter, A.D. Wieck, A.P. Micolich, Journal of Physics: Condensed Matter 25 (2013).","ieee":"D. J. Carrad <i>et al.</i>, “The effect of (NH4)2Sxpassivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices,” <i>Journal of Physics: Condensed Matter</i>, vol. 25, no. 32, 2013.","chicago":"Carrad, D J, A M Burke, P J Reece, R W Lyttleton, D E J Waddington, A Rai, Dirk Reuter, A D Wieck, and A P Micolich. “The Effect of (NH4)2Sxpassivation on the (311)A GaAs Surface and Its Use in AlGaAs/GaAs Heterostructure Devices.” <i>Journal of Physics: Condensed Matter</i> 25, no. 32 (2013). <a href=\"https://doi.org/10.1088/0953-8984/25/32/325304\">https://doi.org/10.1088/0953-8984/25/32/325304</a>.","ama":"Carrad DJ, Burke AM, Reece PJ, et al. The effect of (NH4)2Sxpassivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices. <i>Journal of Physics: Condensed Matter</i>. 2013;25(32). doi:<a href=\"https://doi.org/10.1088/0953-8984/25/32/325304\">10.1088/0953-8984/25/32/325304</a>"},"date_updated":"2022-01-06T07:03:31Z","publisher":"IOP Publishing","volume":25,"author":[{"first_name":"D J","last_name":"Carrad","full_name":"Carrad, D J"},{"first_name":"A M","full_name":"Burke, A M","last_name":"Burke"},{"full_name":"Reece, P J","last_name":"Reece","first_name":"P J"},{"last_name":"Lyttleton","full_name":"Lyttleton, R W","first_name":"R W"},{"first_name":"D E J","last_name":"Waddington","full_name":"Waddington, D E J"},{"first_name":"A","last_name":"Rai","full_name":"Rai, A"},{"first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter"},{"full_name":"Wieck, A D","last_name":"Wieck","first_name":"A D"},{"full_name":"Micolich, A P","last_name":"Micolich","first_name":"A P"}],"date_created":"2019-01-30T12:57:16Z","title":"The effect of (NH4)2Sxpassivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices","doi":"10.1088/0953-8984/25/32/325304"},{"publisher":"Wiley","date_updated":"2022-01-06T07:03:31Z","author":[{"full_name":"Höpfner, Henning","last_name":"Höpfner","first_name":"Henning"},{"full_name":"Fritsche, Carola","last_name":"Fritsche","first_name":"Carola"},{"last_name":"Ludwig","full_name":"Ludwig, Arne","first_name":"Arne"},{"last_name":"Ludwig","full_name":"Ludwig, Astrid","first_name":"Astrid"},{"last_name":"Stromberg","full_name":"Stromberg, Frank","first_name":"Frank"},{"first_name":"Heiko","full_name":"Wende, Heiko","last_name":"Wende"},{"last_name":"Keune","full_name":"Keune, Werner","first_name":"Werner"},{"first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter"},{"last_name":"Wieck","full_name":"Wieck, Andreas D.","first_name":"Andreas D."},{"full_name":"Gerhardt, Nils C.","last_name":"Gerhardt","first_name":"Nils C."},{"full_name":"Hofmann, Martin R.","last_name":"Hofmann","first_name":"Martin R."}],"date_created":"2019-01-30T12:58:14Z","volume":10,"title":"Spin relaxation length in quantum dot spin LEDs","doi":"10.1002/pssc.201200689","publication_status":"published","publication_identifier":{"issn":["1862-6351"]},"issue":"9","year":"2013","citation":{"ama":"Höpfner H, Fritsche C, Ludwig A, et al. Spin relaxation length in quantum dot spin LEDs. <i>physica status solidi (c)</i>. 2013;10(9):1214-1217. doi:<a href=\"https://doi.org/10.1002/pssc.201200689\">10.1002/pssc.201200689</a>","chicago":"Höpfner, Henning, Carola Fritsche, Arne Ludwig, Astrid Ludwig, Frank Stromberg, Heiko Wende, Werner Keune, et al. “Spin Relaxation Length in Quantum Dot Spin LEDs.” <i>Physica Status Solidi (C)</i> 10, no. 9 (2013): 1214–17. <a href=\"https://doi.org/10.1002/pssc.201200689\">https://doi.org/10.1002/pssc.201200689</a>.","ieee":"H. Höpfner <i>et al.</i>, “Spin relaxation length in quantum dot spin LEDs,” <i>physica status solidi (c)</i>, vol. 10, no. 9, pp. 1214–1217, 2013.","short":"H. Höpfner, C. Fritsche, A. Ludwig, A. Ludwig, F. Stromberg, H. Wende, W. Keune, D. Reuter, A.D. Wieck, N.C. Gerhardt, M.R. Hofmann, Physica Status Solidi (C) 10 (2013) 1214–1217.","bibtex":"@article{Höpfner_Fritsche_Ludwig_Ludwig_Stromberg_Wende_Keune_Reuter_Wieck_Gerhardt_et al._2013, title={Spin relaxation length in quantum dot spin LEDs}, volume={10}, DOI={<a href=\"https://doi.org/10.1002/pssc.201200689\">10.1002/pssc.201200689</a>}, number={9}, journal={physica status solidi (c)}, publisher={Wiley}, author={Höpfner, Henning and Fritsche, Carola and Ludwig, Arne and Ludwig, Astrid and Stromberg, Frank and Wende, Heiko and Keune, Werner and Reuter, Dirk and Wieck, Andreas D. and Gerhardt, Nils C. and et al.}, year={2013}, pages={1214–1217} }","mla":"Höpfner, Henning, et al. “Spin Relaxation Length in Quantum Dot Spin LEDs.” <i>Physica Status Solidi (C)</i>, vol. 10, no. 9, Wiley, 2013, pp. 1214–17, doi:<a href=\"https://doi.org/10.1002/pssc.201200689\">10.1002/pssc.201200689</a>.","apa":"Höpfner, H., Fritsche, C., Ludwig, A., Ludwig, A., Stromberg, F., Wende, H., … Hofmann, M. R. (2013). Spin relaxation length in quantum dot spin LEDs. <i>Physica Status Solidi (C)</i>, <i>10</i>(9), 1214–1217. <a href=\"https://doi.org/10.1002/pssc.201200689\">https://doi.org/10.1002/pssc.201200689</a>"},"intvolume":"        10","page":"1214-1217","_id":"7261","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"language":[{"iso":"eng"}],"type":"journal_article","publication":"physica status solidi (c)","status":"public"},{"type":"journal_article","publication":"Physical Review X","status":"public","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"7262","language":[{"iso":"eng"}],"issue":"4","publication_status":"published","publication_identifier":{"issn":["2160-3308"]},"citation":{"bibtex":"@article{Prechtel_Kuhlmann_Houel_Greuter_Ludwig_Reuter_Wieck_Warburton_2013, title={Frequency-Stabilized Source of Single Photons from a Solid-State Qubit}, volume={3}, DOI={<a href=\"https://doi.org/10.1103/physrevx.3.041006\">10.1103/physrevx.3.041006</a>}, number={4}, journal={Physical Review X}, publisher={American Physical Society (APS)}, author={Prechtel, Jonathan H. and Kuhlmann, Andreas V. and Houel, Julien and Greuter, Lukas and Ludwig, Arne and Reuter, Dirk and Wieck, Andreas D. and Warburton, Richard J.}, year={2013} }","short":"J.H. Prechtel, A.V. Kuhlmann, J. Houel, L. Greuter, A. Ludwig, D. Reuter, A.D. Wieck, R.J. Warburton, Physical Review X 3 (2013).","mla":"Prechtel, Jonathan H., et al. “Frequency-Stabilized Source of Single Photons from a Solid-State Qubit.” <i>Physical Review X</i>, vol. 3, no. 4, American Physical Society (APS), 2013, doi:<a href=\"https://doi.org/10.1103/physrevx.3.041006\">10.1103/physrevx.3.041006</a>.","apa":"Prechtel, J. H., Kuhlmann, A. V., Houel, J., Greuter, L., Ludwig, A., Reuter, D., … Warburton, R. J. (2013). Frequency-Stabilized Source of Single Photons from a Solid-State Qubit. <i>Physical Review X</i>, <i>3</i>(4). <a href=\"https://doi.org/10.1103/physrevx.3.041006\">https://doi.org/10.1103/physrevx.3.041006</a>","ieee":"J. H. Prechtel <i>et al.</i>, “Frequency-Stabilized Source of Single Photons from a Solid-State Qubit,” <i>Physical Review X</i>, vol. 3, no. 4, 2013.","chicago":"Prechtel, Jonathan H., Andreas V. Kuhlmann, Julien Houel, Lukas Greuter, Arne Ludwig, Dirk Reuter, Andreas D. Wieck, and Richard J. Warburton. “Frequency-Stabilized Source of Single Photons from a Solid-State Qubit.” <i>Physical Review X</i> 3, no. 4 (2013). <a href=\"https://doi.org/10.1103/physrevx.3.041006\">https://doi.org/10.1103/physrevx.3.041006</a>.","ama":"Prechtel JH, Kuhlmann AV, Houel J, et al. Frequency-Stabilized Source of Single Photons from a Solid-State Qubit. <i>Physical Review X</i>. 2013;3(4). doi:<a href=\"https://doi.org/10.1103/physrevx.3.041006\">10.1103/physrevx.3.041006</a>"},"intvolume":"         3","year":"2013","date_created":"2019-01-30T12:59:55Z","author":[{"last_name":"Prechtel","full_name":"Prechtel, Jonathan H.","first_name":"Jonathan H."},{"last_name":"Kuhlmann","full_name":"Kuhlmann, Andreas V.","first_name":"Andreas V."},{"first_name":"Julien","last_name":"Houel","full_name":"Houel, Julien"},{"first_name":"Lukas","last_name":"Greuter","full_name":"Greuter, Lukas"},{"first_name":"Arne","last_name":"Ludwig","full_name":"Ludwig, Arne"},{"first_name":"Dirk","last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk"},{"last_name":"Wieck","full_name":"Wieck, Andreas D.","first_name":"Andreas D."},{"full_name":"Warburton, Richard J.","last_name":"Warburton","first_name":"Richard J."}],"volume":3,"publisher":"American Physical Society (APS)","date_updated":"2022-01-06T07:03:31Z","doi":"10.1103/physrevx.3.041006","title":"Frequency-Stabilized Source of Single Photons from a Solid-State Qubit"},{"user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"7263","language":[{"iso":"eng"}],"type":"journal_article","publication":"physica status solidi (b)","status":"public","date_created":"2019-01-30T13:07:31Z","author":[{"first_name":"Galan","last_name":"Moody","full_name":"Moody, Galan"},{"first_name":"Rohan","full_name":"Singh, Rohan","last_name":"Singh"},{"first_name":"Hebin","last_name":"Li","full_name":"Li, Hebin"},{"first_name":"Ilya A.","last_name":"Akimov","full_name":"Akimov, Ilya A."},{"first_name":"Manfred","full_name":"Bayer, Manfred","last_name":"Bayer"},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"first_name":"Andreas D.","full_name":"Wieck, Andreas D.","last_name":"Wieck"},{"first_name":"Allan S.","full_name":"Bracker, Allan S.","last_name":"Bracker"},{"full_name":"Gammon, Daniel","last_name":"Gammon","first_name":"Daniel"},{"last_name":"Cundiff","full_name":"Cundiff, Steven T.","first_name":"Steven T."}],"volume":250,"date_updated":"2022-01-06T07:03:31Z","publisher":"Wiley","doi":"10.1002/pssb.201200725","title":"Biexcitons in semiconductor quantum dot ensembles","issue":"9","publication_status":"published","publication_identifier":{"issn":["0370-1972"]},"citation":{"ama":"Moody G, Singh R, Li H, et al. Biexcitons in semiconductor quantum dot ensembles. <i>physica status solidi (b)</i>. 2013;250(9):1753-1759. doi:<a href=\"https://doi.org/10.1002/pssb.201200725\">10.1002/pssb.201200725</a>","ieee":"G. Moody <i>et al.</i>, “Biexcitons in semiconductor quantum dot ensembles,” <i>physica status solidi (b)</i>, vol. 250, no. 9, pp. 1753–1759, 2013.","chicago":"Moody, Galan, Rohan Singh, Hebin Li, Ilya A. Akimov, Manfred Bayer, Dirk Reuter, Andreas D. Wieck, Allan S. Bracker, Daniel Gammon, and Steven T. Cundiff. “Biexcitons in Semiconductor Quantum Dot Ensembles.” <i>Physica Status Solidi (B)</i> 250, no. 9 (2013): 1753–59. <a href=\"https://doi.org/10.1002/pssb.201200725\">https://doi.org/10.1002/pssb.201200725</a>.","bibtex":"@article{Moody_Singh_Li_Akimov_Bayer_Reuter_Wieck_Bracker_Gammon_Cundiff_2013, title={Biexcitons in semiconductor quantum dot ensembles}, volume={250}, DOI={<a href=\"https://doi.org/10.1002/pssb.201200725\">10.1002/pssb.201200725</a>}, number={9}, journal={physica status solidi (b)}, publisher={Wiley}, author={Moody, Galan and Singh, Rohan and Li, Hebin and Akimov, Ilya A. and Bayer, Manfred and Reuter, Dirk and Wieck, Andreas D. and Bracker, Allan S. and Gammon, Daniel and Cundiff, Steven T.}, year={2013}, pages={1753–1759} }","mla":"Moody, Galan, et al. “Biexcitons in Semiconductor Quantum Dot Ensembles.” <i>Physica Status Solidi (B)</i>, vol. 250, no. 9, Wiley, 2013, pp. 1753–59, doi:<a href=\"https://doi.org/10.1002/pssb.201200725\">10.1002/pssb.201200725</a>.","short":"G. Moody, R. Singh, H. Li, I.A. Akimov, M. Bayer, D. Reuter, A.D. Wieck, A.S. Bracker, D. Gammon, S.T. Cundiff, Physica Status Solidi (B) 250 (2013) 1753–1759.","apa":"Moody, G., Singh, R., Li, H., Akimov, I. A., Bayer, M., Reuter, D., … Cundiff, S. T. (2013). Biexcitons in semiconductor quantum dot ensembles. <i>Physica Status Solidi (B)</i>, <i>250</i>(9), 1753–1759. <a href=\"https://doi.org/10.1002/pssb.201200725\">https://doi.org/10.1002/pssb.201200725</a>"},"intvolume":"       250","page":"1753-1759","year":"2013"},{"language":[{"iso":"eng"}],"article_number":"093305","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","_id":"7264","status":"public","publication":"Review of Scientific Instruments","type":"journal_article","doi":"10.1063/1.4822275","title":"High-resolution mass spectrometer for liquid metal ion sources","volume":84,"date_created":"2019-01-30T13:13:29Z","author":[{"first_name":"Martin","last_name":"Wortmann","full_name":"Wortmann, Martin"},{"first_name":"Arne","last_name":"Ludwig","full_name":"Ludwig, Arne"},{"last_name":"Meijer","full_name":"Meijer, Jan","first_name":"Jan"},{"last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk"},{"first_name":"Andreas D.","last_name":"Wieck","full_name":"Wieck, Andreas D."}],"date_updated":"2022-01-06T07:03:31Z","publisher":"AIP Publishing","intvolume":"        84","citation":{"mla":"Wortmann, Martin, et al. “High-Resolution Mass Spectrometer for Liquid Metal Ion Sources.” <i>Review of Scientific Instruments</i>, vol. 84, no. 9, 093305, AIP Publishing, 2013, doi:<a href=\"https://doi.org/10.1063/1.4822275\">10.1063/1.4822275</a>.","short":"M. Wortmann, A. Ludwig, J. Meijer, D. Reuter, A.D. Wieck, Review of Scientific Instruments 84 (2013).","bibtex":"@article{Wortmann_Ludwig_Meijer_Reuter_Wieck_2013, title={High-resolution mass spectrometer for liquid metal ion sources}, volume={84}, DOI={<a href=\"https://doi.org/10.1063/1.4822275\">10.1063/1.4822275</a>}, number={9093305}, journal={Review of Scientific Instruments}, publisher={AIP Publishing}, author={Wortmann, Martin and Ludwig, Arne and Meijer, Jan and Reuter, Dirk and Wieck, Andreas D.}, year={2013} }","apa":"Wortmann, M., Ludwig, A., Meijer, J., Reuter, D., &#38; Wieck, A. D. (2013). High-resolution mass spectrometer for liquid metal ion sources. <i>Review of Scientific Instruments</i>, <i>84</i>(9). <a href=\"https://doi.org/10.1063/1.4822275\">https://doi.org/10.1063/1.4822275</a>","ama":"Wortmann M, Ludwig A, Meijer J, Reuter D, Wieck AD. High-resolution mass spectrometer for liquid metal ion sources. <i>Review of Scientific Instruments</i>. 2013;84(9). doi:<a href=\"https://doi.org/10.1063/1.4822275\">10.1063/1.4822275</a>","ieee":"M. Wortmann, A. Ludwig, J. Meijer, D. Reuter, and A. D. Wieck, “High-resolution mass spectrometer for liquid metal ion sources,” <i>Review of Scientific Instruments</i>, vol. 84, no. 9, 2013.","chicago":"Wortmann, Martin, Arne Ludwig, Jan Meijer, Dirk Reuter, and Andreas D. Wieck. “High-Resolution Mass Spectrometer for Liquid Metal Ion Sources.” <i>Review of Scientific Instruments</i> 84, no. 9 (2013). <a href=\"https://doi.org/10.1063/1.4822275\">https://doi.org/10.1063/1.4822275</a>."},"year":"2013","issue":"9","publication_identifier":{"issn":["0034-6748","1089-7623"]},"publication_status":"published"},{"user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"7266","language":[{"iso":"eng"}],"type":"journal_article","publication":"Nature Physics","status":"public","date_created":"2019-01-30T13:15:20Z","author":[{"first_name":"Andreas V.","full_name":"Kuhlmann, Andreas V.","last_name":"Kuhlmann"},{"last_name":"Houel","full_name":"Houel, Julien","first_name":"Julien"},{"full_name":"Ludwig, Arne","last_name":"Ludwig","first_name":"Arne"},{"first_name":"Lukas","last_name":"Greuter","full_name":"Greuter, Lukas"},{"first_name":"Dirk","last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk"},{"full_name":"Wieck, Andreas D.","last_name":"Wieck","first_name":"Andreas D."},{"last_name":"Poggio","full_name":"Poggio, Martino","first_name":"Martino"},{"first_name":"Richard J.","last_name":"Warburton","full_name":"Warburton, Richard J."}],"volume":9,"date_updated":"2022-01-06T07:03:31Z","publisher":"Springer Nature","doi":"10.1038/nphys2688","title":"Charge noise and spin noise in a semiconductor quantum device","issue":"9","publication_status":"published","publication_identifier":{"issn":["1745-2473","1745-2481"]},"citation":{"ama":"Kuhlmann AV, Houel J, Ludwig A, et al. Charge noise and spin noise in a semiconductor quantum device. <i>Nature Physics</i>. 2013;9(9):570-575. doi:<a href=\"https://doi.org/10.1038/nphys2688\">10.1038/nphys2688</a>","chicago":"Kuhlmann, Andreas V., Julien Houel, Arne Ludwig, Lukas Greuter, Dirk Reuter, Andreas D. Wieck, Martino Poggio, and Richard J. Warburton. “Charge Noise and Spin Noise in a Semiconductor Quantum Device.” <i>Nature Physics</i> 9, no. 9 (2013): 570–75. <a href=\"https://doi.org/10.1038/nphys2688\">https://doi.org/10.1038/nphys2688</a>.","ieee":"A. V. Kuhlmann <i>et al.</i>, “Charge noise and spin noise in a semiconductor quantum device,” <i>Nature Physics</i>, vol. 9, no. 9, pp. 570–575, 2013.","bibtex":"@article{Kuhlmann_Houel_Ludwig_Greuter_Reuter_Wieck_Poggio_Warburton_2013, title={Charge noise and spin noise in a semiconductor quantum device}, volume={9}, DOI={<a href=\"https://doi.org/10.1038/nphys2688\">10.1038/nphys2688</a>}, number={9}, journal={Nature Physics}, publisher={Springer Nature}, author={Kuhlmann, Andreas V. and Houel, Julien and Ludwig, Arne and Greuter, Lukas and Reuter, Dirk and Wieck, Andreas D. and Poggio, Martino and Warburton, Richard J.}, year={2013}, pages={570–575} }","mla":"Kuhlmann, Andreas V., et al. “Charge Noise and Spin Noise in a Semiconductor Quantum Device.” <i>Nature Physics</i>, vol. 9, no. 9, Springer Nature, 2013, pp. 570–75, doi:<a href=\"https://doi.org/10.1038/nphys2688\">10.1038/nphys2688</a>.","short":"A.V. Kuhlmann, J. Houel, A. Ludwig, L. Greuter, D. Reuter, A.D. Wieck, M. Poggio, R.J. Warburton, Nature Physics 9 (2013) 570–575.","apa":"Kuhlmann, A. V., Houel, J., Ludwig, A., Greuter, L., Reuter, D., Wieck, A. D., … Warburton, R. J. (2013). Charge noise and spin noise in a semiconductor quantum device. <i>Nature Physics</i>, <i>9</i>(9), 570–575. <a href=\"https://doi.org/10.1038/nphys2688\">https://doi.org/10.1038/nphys2688</a>"},"page":"570-575","intvolume":"         9","year":"2013"},{"issue":"7","publication_identifier":{"issn":["0034-6748","1089-7623"]},"publication_status":"published","intvolume":"        84","citation":{"apa":"Kuhlmann, A. V., Houel, J., Brunner, D., Ludwig, A., Reuter, D., Wieck, A. D., &#38; Warburton, R. J. (2013). A dark-field microscope for background-free detection of resonance fluorescence from single semiconductor quantum dots operating in a set-and-forget mode. <i>Review of Scientific Instruments</i>, <i>84</i>(7). <a href=\"https://doi.org/10.1063/1.4813879\">https://doi.org/10.1063/1.4813879</a>","short":"A.V. Kuhlmann, J. Houel, D. Brunner, A. Ludwig, D. Reuter, A.D. Wieck, R.J. Warburton, Review of Scientific Instruments 84 (2013).","bibtex":"@article{Kuhlmann_Houel_Brunner_Ludwig_Reuter_Wieck_Warburton_2013, title={A dark-field microscope for background-free detection of resonance fluorescence from single semiconductor quantum dots operating in a set-and-forget mode}, volume={84}, DOI={<a href=\"https://doi.org/10.1063/1.4813879\">10.1063/1.4813879</a>}, number={7073905}, journal={Review of Scientific Instruments}, publisher={AIP Publishing}, author={Kuhlmann, Andreas V. and Houel, Julien and Brunner, Daniel and Ludwig, Arne and Reuter, Dirk and Wieck, Andreas D. and Warburton, Richard J.}, year={2013} }","mla":"Kuhlmann, Andreas V., et al. “A Dark-Field Microscope for Background-Free Detection of Resonance Fluorescence from Single Semiconductor Quantum Dots Operating in a Set-and-Forget Mode.” <i>Review of Scientific Instruments</i>, vol. 84, no. 7, 073905, AIP Publishing, 2013, doi:<a href=\"https://doi.org/10.1063/1.4813879\">10.1063/1.4813879</a>.","chicago":"Kuhlmann, Andreas V., Julien Houel, Daniel Brunner, Arne Ludwig, Dirk Reuter, Andreas D. Wieck, and Richard J. Warburton. “A Dark-Field Microscope for Background-Free Detection of Resonance Fluorescence from Single Semiconductor Quantum Dots Operating in a Set-and-Forget Mode.” <i>Review of Scientific Instruments</i> 84, no. 7 (2013). <a href=\"https://doi.org/10.1063/1.4813879\">https://doi.org/10.1063/1.4813879</a>.","ieee":"A. V. Kuhlmann <i>et al.</i>, “A dark-field microscope for background-free detection of resonance fluorescence from single semiconductor quantum dots operating in a set-and-forget mode,” <i>Review of Scientific Instruments</i>, vol. 84, no. 7, 2013.","ama":"Kuhlmann AV, Houel J, Brunner D, et al. A dark-field microscope for background-free detection of resonance fluorescence from single semiconductor quantum dots operating in a set-and-forget mode. <i>Review of Scientific Instruments</i>. 2013;84(7). doi:<a href=\"https://doi.org/10.1063/1.4813879\">10.1063/1.4813879</a>"},"year":"2013","volume":84,"date_created":"2019-01-30T13:16:44Z","author":[{"last_name":"Kuhlmann","full_name":"Kuhlmann, Andreas V.","first_name":"Andreas V."},{"last_name":"Houel","full_name":"Houel, Julien","first_name":"Julien"},{"last_name":"Brunner","full_name":"Brunner, Daniel","first_name":"Daniel"},{"last_name":"Ludwig","full_name":"Ludwig, Arne","first_name":"Arne"},{"first_name":"Dirk","id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter"},{"first_name":"Andreas D.","full_name":"Wieck, Andreas D.","last_name":"Wieck"},{"full_name":"Warburton, Richard J.","last_name":"Warburton","first_name":"Richard J."}],"publisher":"AIP Publishing","date_updated":"2022-01-06T07:03:31Z","doi":"10.1063/1.4813879","title":"A dark-field microscope for background-free detection of resonance fluorescence from single semiconductor quantum dots operating in a set-and-forget mode","publication":"Review of Scientific Instruments","type":"journal_article","status":"public","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","_id":"7267","language":[{"iso":"eng"}],"article_number":"073905"},{"publication_status":"published","year":"2013","citation":{"apa":"Höpfner, H., Fritsche, C., Ludwig, A., Ludwig, A., Stromberg, F., Wende, H., … Hofmann, M. R. (2013). Spin injection, transport, and relaxation in spin light-emitting diodes: magnetic field effects. In H.-J. Drouhin, J.-E. Wegrowe, &#38; M. Razeghi (Eds.), <i>Spintronics VI</i>. SPIE. <a href=\"https://doi.org/10.1117/12.2023324\">https://doi.org/10.1117/12.2023324</a>","short":"H. Höpfner, C. Fritsche, A. Ludwig, A. Ludwig, F. Stromberg, H. Wende, W. Keune, D. Reuter, A.D. Wieck, N.C. Gerhardt, M.R. Hofmann, in: H.-J. Drouhin, J.-E. Wegrowe, M. Razeghi (Eds.), Spintronics VI, SPIE, 2013.","bibtex":"@inproceedings{Höpfner_Fritsche_Ludwig_Ludwig_Stromberg_Wende_Keune_Reuter_Wieck_Gerhardt_et al._2013, title={Spin injection, transport, and relaxation in spin light-emitting diodes: magnetic field effects}, DOI={<a href=\"https://doi.org/10.1117/12.2023324\">10.1117/12.2023324</a>}, booktitle={Spintronics VI}, publisher={SPIE}, author={Höpfner, Henning and Fritsche, Carola and Ludwig, Arne and Ludwig, Astrid and Stromberg, Frank and Wende, Heiko and Keune, Werner and Reuter, Dirk and Wieck, Andreas D. and Gerhardt, Nils C. and et al.}, editor={Drouhin, Henri-Jean and Wegrowe, Jean-Eric and Razeghi, ManijehEditors}, year={2013} }","mla":"Höpfner, Henning, et al. “Spin Injection, Transport, and Relaxation in Spin Light-Emitting Diodes: Magnetic Field Effects.” <i>Spintronics VI</i>, edited by Henri-Jean Drouhin et al., SPIE, 2013, doi:<a href=\"https://doi.org/10.1117/12.2023324\">10.1117/12.2023324</a>.","ama":"Höpfner H, Fritsche C, Ludwig A, et al. Spin injection, transport, and relaxation in spin light-emitting diodes: magnetic field effects. In: Drouhin H-J, Wegrowe J-E, Razeghi M, eds. <i>Spintronics VI</i>. SPIE; 2013. doi:<a href=\"https://doi.org/10.1117/12.2023324\">10.1117/12.2023324</a>","ieee":"H. Höpfner <i>et al.</i>, “Spin injection, transport, and relaxation in spin light-emitting diodes: magnetic field effects,” in <i>Spintronics VI</i>, 2013.","chicago":"Höpfner, Henning, Carola Fritsche, Arne Ludwig, Astrid Ludwig, Frank Stromberg, Heiko Wende, Werner Keune, et al. “Spin Injection, Transport, and Relaxation in Spin Light-Emitting Diodes: Magnetic Field Effects.” In <i>Spintronics VI</i>, edited by Henri-Jean Drouhin, Jean-Eric Wegrowe, and Manijeh Razeghi. SPIE, 2013. <a href=\"https://doi.org/10.1117/12.2023324\">https://doi.org/10.1117/12.2023324</a>."},"publisher":"SPIE","date_updated":"2022-01-06T07:03:31Z","date_created":"2019-01-31T07:53:09Z","author":[{"first_name":"Henning","last_name":"Höpfner","full_name":"Höpfner, Henning"},{"last_name":"Fritsche","full_name":"Fritsche, Carola","first_name":"Carola"},{"first_name":"Arne","full_name":"Ludwig, Arne","last_name":"Ludwig"},{"full_name":"Ludwig, Astrid","last_name":"Ludwig","first_name":"Astrid"},{"last_name":"Stromberg","full_name":"Stromberg, Frank","first_name":"Frank"},{"last_name":"Wende","full_name":"Wende, Heiko","first_name":"Heiko"},{"first_name":"Werner","last_name":"Keune","full_name":"Keune, Werner"},{"last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk"},{"last_name":"Wieck","full_name":"Wieck, Andreas D.","first_name":"Andreas D."},{"first_name":"Nils C.","last_name":"Gerhardt","full_name":"Gerhardt, Nils C."},{"first_name":"Martin R.","last_name":"Hofmann","full_name":"Hofmann, Martin R."}],"title":"Spin injection, transport, and relaxation in spin light-emitting diodes: magnetic field effects","doi":"10.1117/12.2023324","type":"conference","publication":"Spintronics VI","editor":[{"last_name":"Drouhin","full_name":"Drouhin, Henri-Jean","first_name":"Henri-Jean"},{"first_name":"Jean-Eric","full_name":"Wegrowe, Jean-Eric","last_name":"Wegrowe"},{"last_name":"Razeghi","full_name":"Razeghi, Manijeh","first_name":"Manijeh"}],"status":"public","_id":"7280","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"language":[{"iso":"eng"}]},{"issue":"9","publication_status":"published","publication_identifier":{"issn":["1862-6351"]},"citation":{"chicago":"Höpfner, Henning, Carola Fritsche, Arne Ludwig, Astrid Ludwig, Frank Stromberg, Heiko Wende, Werner Keune, et al. “Spin Relaxation Length in Quantum Dot Spin LEDs.” <i>Physica Status Solidi (C)</i> 10, no. 9 (2013): 1214–17. <a href=\"https://doi.org/10.1002/pssc.201200689\">https://doi.org/10.1002/pssc.201200689</a>.","ieee":"H. Höpfner <i>et al.</i>, “Spin relaxation length in quantum dot spin LEDs,” <i>physica status solidi (c)</i>, vol. 10, no. 9, pp. 1214–1217, 2013.","ama":"Höpfner H, Fritsche C, Ludwig A, et al. Spin relaxation length in quantum dot spin LEDs. <i>physica status solidi (c)</i>. 2013;10(9):1214-1217. doi:<a href=\"https://doi.org/10.1002/pssc.201200689\">10.1002/pssc.201200689</a>","mla":"Höpfner, Henning, et al. “Spin Relaxation Length in Quantum Dot Spin LEDs.” <i>Physica Status Solidi (C)</i>, vol. 10, no. 9, Wiley, 2013, pp. 1214–17, doi:<a href=\"https://doi.org/10.1002/pssc.201200689\">10.1002/pssc.201200689</a>.","short":"H. Höpfner, C. Fritsche, A. Ludwig, A. Ludwig, F. Stromberg, H. Wende, W. Keune, D. Reuter, A.D. Wieck, N.C. Gerhardt, M.R. Hofmann, Physica Status Solidi (C) 10 (2013) 1214–1217.","bibtex":"@article{Höpfner_Fritsche_Ludwig_Ludwig_Stromberg_Wende_Keune_Reuter_Wieck_Gerhardt_et al._2013, title={Spin relaxation length in quantum dot spin LEDs}, volume={10}, DOI={<a href=\"https://doi.org/10.1002/pssc.201200689\">10.1002/pssc.201200689</a>}, number={9}, journal={physica status solidi (c)}, publisher={Wiley}, author={Höpfner, Henning and Fritsche, Carola and Ludwig, Arne and Ludwig, Astrid and Stromberg, Frank and Wende, Heiko and Keune, Werner and Reuter, Dirk and Wieck, Andreas D. and Gerhardt, Nils C. and et al.}, year={2013}, pages={1214–1217} }","apa":"Höpfner, H., Fritsche, C., Ludwig, A., Ludwig, A., Stromberg, F., Wende, H., … Hofmann, M. R. (2013). Spin relaxation length in quantum dot spin LEDs. <i>Physica Status Solidi (C)</i>, <i>10</i>(9), 1214–1217. <a href=\"https://doi.org/10.1002/pssc.201200689\">https://doi.org/10.1002/pssc.201200689</a>"},"page":"1214-1217","intvolume":"        10","year":"2013","author":[{"first_name":"Henning","last_name":"Höpfner","full_name":"Höpfner, Henning"},{"last_name":"Fritsche","full_name":"Fritsche, Carola","first_name":"Carola"},{"last_name":"Ludwig","full_name":"Ludwig, Arne","first_name":"Arne"},{"first_name":"Astrid","last_name":"Ludwig","full_name":"Ludwig, Astrid"},{"first_name":"Frank","last_name":"Stromberg","full_name":"Stromberg, Frank"},{"last_name":"Wende","full_name":"Wende, Heiko","first_name":"Heiko"},{"first_name":"Werner","last_name":"Keune","full_name":"Keune, Werner"},{"first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter"},{"last_name":"Wieck","full_name":"Wieck, Andreas D.","first_name":"Andreas D."},{"full_name":"Gerhardt, Nils C.","last_name":"Gerhardt","first_name":"Nils C."},{"last_name":"Hofmann","full_name":"Hofmann, Martin R.","first_name":"Martin R."}],"date_created":"2019-01-31T07:54:12Z","volume":10,"date_updated":"2022-01-06T07:03:31Z","publisher":"Wiley","doi":"10.1002/pssc.201200689","title":"Spin relaxation length in quantum dot spin LEDs","type":"journal_article","publication":"physica status solidi (c)","status":"public","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"7281","language":[{"iso":"eng"}]},{"volume":28,"author":[{"full_name":"Schuster, J","last_name":"Schuster","first_name":"J"},{"full_name":"Kim, T Y","last_name":"Kim","first_name":"T Y"},{"last_name":"Batke","full_name":"Batke, E","first_name":"E"},{"last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763","first_name":"Dirk"},{"first_name":"A D","full_name":"Wieck, A D","last_name":"Wieck"}],"date_created":"2019-01-31T08:01:35Z","date_updated":"2022-01-06T07:03:31Z","publisher":"IOP Publishing","doi":"10.1088/0268-1242/28/8/085012","title":"Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures","issue":"8","publication_identifier":{"issn":["0268-1242","1361-6641"]},"publication_status":"published","intvolume":"        28","citation":{"apa":"Schuster, J., Kim, T. Y., Batke, E., Reuter, D., &#38; Wieck, A. D. (2013). Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures. <i>Semiconductor Science and Technology</i>, <i>28</i>(8). <a href=\"https://doi.org/10.1088/0268-1242/28/8/085012\">https://doi.org/10.1088/0268-1242/28/8/085012</a>","mla":"Schuster, J., et al. “Influence of Recombination Center Interaction on the Photoluminescence of AlGaAs/GaAs Heterostructures.” <i>Semiconductor Science and Technology</i>, vol. 28, no. 8, 085012, IOP Publishing, 2013, doi:<a href=\"https://doi.org/10.1088/0268-1242/28/8/085012\">10.1088/0268-1242/28/8/085012</a>.","short":"J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology 28 (2013).","bibtex":"@article{Schuster_Kim_Batke_Reuter_Wieck_2013, title={Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures}, volume={28}, DOI={<a href=\"https://doi.org/10.1088/0268-1242/28/8/085012\">10.1088/0268-1242/28/8/085012</a>}, number={8085012}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Schuster, J and Kim, T Y and Batke, E and Reuter, Dirk and Wieck, A D}, year={2013} }","ama":"Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures. <i>Semiconductor Science and Technology</i>. 2013;28(8). doi:<a href=\"https://doi.org/10.1088/0268-1242/28/8/085012\">10.1088/0268-1242/28/8/085012</a>","chicago":"Schuster, J, T Y Kim, E Batke, Dirk Reuter, and A D Wieck. “Influence of Recombination Center Interaction on the Photoluminescence of AlGaAs/GaAs Heterostructures.” <i>Semiconductor Science and Technology</i> 28, no. 8 (2013). <a href=\"https://doi.org/10.1088/0268-1242/28/8/085012\">https://doi.org/10.1088/0268-1242/28/8/085012</a>.","ieee":"J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures,” <i>Semiconductor Science and Technology</i>, vol. 28, no. 8, 2013."},"year":"2013","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","_id":"7282","language":[{"iso":"eng"}],"article_number":"085012","publication":"Semiconductor Science and Technology","type":"journal_article","status":"public"},{"department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","_id":"7284","language":[{"iso":"eng"}],"publication":"Physical Review B","type":"journal_article","status":"public","volume":87,"date_created":"2019-01-31T08:39:43Z","author":[{"last_name":"Kuznetsova","full_name":"Kuznetsova, M. S.","first_name":"M. S."},{"first_name":"K.","last_name":"Flisinski","full_name":"Flisinski, K."},{"full_name":"Gerlovin, I. Ya.","last_name":"Gerlovin","first_name":"I. Ya."},{"full_name":"Ignatiev, I. V.","last_name":"Ignatiev","first_name":"I. V."},{"full_name":"Kavokin, K. V.","last_name":"Kavokin","first_name":"K. V."},{"first_name":"S. Yu.","full_name":"Verbin, S. Yu.","last_name":"Verbin"},{"first_name":"D. R.","last_name":"Yakovlev","full_name":"Yakovlev, D. R."},{"full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter","first_name":"Dirk"},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."},{"full_name":"Bayer, M.","last_name":"Bayer","first_name":"M."}],"publisher":"American Physical Society (APS)","date_updated":"2022-01-06T07:03:32Z","doi":"10.1103/physrevb.87.235320","title":"Hanle effect in (In,Ga)As quantum dots: Role of nuclear spin fluctuations","issue":"23","publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","intvolume":"        87","citation":{"short":"M.S. Kuznetsova, K. Flisinski, I.Y. Gerlovin, I.V. Ignatiev, K.V. Kavokin, S.Y. Verbin, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physical Review B 87 (2013).","mla":"Kuznetsova, M. S., et al. “Hanle Effect in (In,Ga)As Quantum Dots: Role of Nuclear Spin Fluctuations.” <i>Physical Review B</i>, vol. 87, no. 23, American Physical Society (APS), 2013, doi:<a href=\"https://doi.org/10.1103/physrevb.87.235320\">10.1103/physrevb.87.235320</a>.","bibtex":"@article{Kuznetsova_Flisinski_Gerlovin_Ignatiev_Kavokin_Verbin_Yakovlev_Reuter_Wieck_Bayer_2013, title={Hanle effect in (In,Ga)As quantum dots: Role of nuclear spin fluctuations}, volume={87}, DOI={<a href=\"https://doi.org/10.1103/physrevb.87.235320\">10.1103/physrevb.87.235320</a>}, number={23}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Kuznetsova, M. S. and Flisinski, K. and Gerlovin, I. Ya. and Ignatiev, I. V. and Kavokin, K. V. and Verbin, S. Yu. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Bayer, M.}, year={2013} }","apa":"Kuznetsova, M. S., Flisinski, K., Gerlovin, I. Y., Ignatiev, I. V., Kavokin, K. V., Verbin, S. Y., … Bayer, M. (2013). Hanle effect in (In,Ga)As quantum dots: Role of nuclear spin fluctuations. <i>Physical Review B</i>, <i>87</i>(23). <a href=\"https://doi.org/10.1103/physrevb.87.235320\">https://doi.org/10.1103/physrevb.87.235320</a>","chicago":"Kuznetsova, M. S., K. Flisinski, I. Ya. Gerlovin, I. V. Ignatiev, K. V. Kavokin, S. Yu. Verbin, D. R. Yakovlev, Dirk Reuter, A. D. Wieck, and M. Bayer. “Hanle Effect in (In,Ga)As Quantum Dots: Role of Nuclear Spin Fluctuations.” <i>Physical Review B</i> 87, no. 23 (2013). <a href=\"https://doi.org/10.1103/physrevb.87.235320\">https://doi.org/10.1103/physrevb.87.235320</a>.","ieee":"M. S. Kuznetsova <i>et al.</i>, “Hanle effect in (In,Ga)As quantum dots: Role of nuclear spin fluctuations,” <i>Physical Review B</i>, vol. 87, no. 23, 2013.","ama":"Kuznetsova MS, Flisinski K, Gerlovin IY, et al. Hanle effect in (In,Ga)As quantum dots: Role of nuclear spin fluctuations. <i>Physical Review B</i>. 2013;87(23). doi:<a href=\"https://doi.org/10.1103/physrevb.87.235320\">10.1103/physrevb.87.235320</a>"},"year":"2013"},{"doi":"10.1103/physrevb.87.245406","title":"Origins of conductance anomalies in ap-type GaAs quantum point contact","date_created":"2019-01-31T08:43:51Z","author":[{"last_name":"Komijani","full_name":"Komijani, Y.","first_name":"Y."},{"first_name":"M.","full_name":"Csontos, M.","last_name":"Csontos"},{"first_name":"T.","full_name":"Ihn, T.","last_name":"Ihn"},{"first_name":"K.","full_name":"Ensslin, K.","last_name":"Ensslin"},{"full_name":"Meir, Y.","last_name":"Meir","first_name":"Y."},{"first_name":"Dirk","last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk"},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."}],"volume":87,"publisher":"American Physical Society (APS)","date_updated":"2022-01-06T07:03:32Z","citation":{"ieee":"Y. Komijani <i>et al.</i>, “Origins of conductance anomalies in ap-type GaAs quantum point contact,” <i>Physical Review B</i>, vol. 87, no. 24, 2013.","chicago":"Komijani, Y., M. Csontos, T. Ihn, K. Ensslin, Y. Meir, Dirk Reuter, and A. D. Wieck. “Origins of Conductance Anomalies in Ap-Type GaAs Quantum Point Contact.” <i>Physical Review B</i> 87, no. 24 (2013). <a href=\"https://doi.org/10.1103/physrevb.87.245406\">https://doi.org/10.1103/physrevb.87.245406</a>.","ama":"Komijani Y, Csontos M, Ihn T, et al. Origins of conductance anomalies in ap-type GaAs quantum point contact. <i>Physical Review B</i>. 2013;87(24). doi:<a href=\"https://doi.org/10.1103/physrevb.87.245406\">10.1103/physrevb.87.245406</a>","apa":"Komijani, Y., Csontos, M., Ihn, T., Ensslin, K., Meir, Y., Reuter, D., &#38; Wieck, A. D. (2013). Origins of conductance anomalies in ap-type GaAs quantum point contact. <i>Physical Review B</i>, <i>87</i>(24). <a href=\"https://doi.org/10.1103/physrevb.87.245406\">https://doi.org/10.1103/physrevb.87.245406</a>","bibtex":"@article{Komijani_Csontos_Ihn_Ensslin_Meir_Reuter_Wieck_2013, title={Origins of conductance anomalies in ap-type GaAs quantum point contact}, volume={87}, DOI={<a href=\"https://doi.org/10.1103/physrevb.87.245406\">10.1103/physrevb.87.245406</a>}, number={24}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Komijani, Y. and Csontos, M. and Ihn, T. and Ensslin, K. and Meir, Y. and Reuter, Dirk and Wieck, A. D.}, year={2013} }","mla":"Komijani, Y., et al. “Origins of Conductance Anomalies in Ap-Type GaAs Quantum Point Contact.” <i>Physical Review B</i>, vol. 87, no. 24, American Physical Society (APS), 2013, doi:<a href=\"https://doi.org/10.1103/physrevb.87.245406\">10.1103/physrevb.87.245406</a>.","short":"Y. Komijani, M. Csontos, T. Ihn, K. Ensslin, Y. Meir, D. Reuter, A.D. Wieck, Physical Review B 87 (2013)."},"intvolume":"        87","year":"2013","issue":"24","publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"language":[{"iso":"eng"}],"user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"7285","status":"public","type":"journal_article","publication":"Physical Review B"},{"page":"887-892","intvolume":"        46","citation":{"mla":"Bussone, Genziana, et al. “Grazing-Incidence X-Ray Diffraction of Single GaAs Nanowires at Locations Defined by Focused Ion Beams.” <i>Journal of Applied Crystallography</i>, vol. 46, no. 4, International Union of Crystallography (IUCr), 2013, pp. 887–92, doi:<a href=\"https://doi.org/10.1107/s0021889813004226\">10.1107/s0021889813004226</a>.","short":"G. Bussone, R. Schott, A. Biermanns, A. Davydok, D. Reuter, G. Carbone, T.U. Schülli, A.D. Wieck, U. Pietsch, Journal of Applied Crystallography 46 (2013) 887–892.","bibtex":"@article{Bussone_Schott_Biermanns_Davydok_Reuter_Carbone_Schülli_Wieck_Pietsch_2013, title={Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams}, volume={46}, DOI={<a href=\"https://doi.org/10.1107/s0021889813004226\">10.1107/s0021889813004226</a>}, number={4}, journal={Journal of Applied Crystallography}, publisher={International Union of Crystallography (IUCr)}, author={Bussone, Genziana and Schott, Rüdiger and Biermanns, Andreas and Davydok, Anton and Reuter, Dirk and Carbone, Gerardina and Schülli, Tobias U. and Wieck, Andreas D. and Pietsch, Ullrich}, year={2013}, pages={887–892} }","apa":"Bussone, G., Schott, R., Biermanns, A., Davydok, A., Reuter, D., Carbone, G., … Pietsch, U. (2013). Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams. <i>Journal of Applied Crystallography</i>, <i>46</i>(4), 887–892. <a href=\"https://doi.org/10.1107/s0021889813004226\">https://doi.org/10.1107/s0021889813004226</a>","ieee":"G. Bussone <i>et al.</i>, “Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams,” <i>Journal of Applied Crystallography</i>, vol. 46, no. 4, pp. 887–892, 2013.","chicago":"Bussone, Genziana, Rüdiger Schott, Andreas Biermanns, Anton Davydok, Dirk Reuter, Gerardina Carbone, Tobias U. Schülli, Andreas D. Wieck, and Ullrich Pietsch. “Grazing-Incidence X-Ray Diffraction of Single GaAs Nanowires at Locations Defined by Focused Ion Beams.” <i>Journal of Applied Crystallography</i> 46, no. 4 (2013): 887–92. <a href=\"https://doi.org/10.1107/s0021889813004226\">https://doi.org/10.1107/s0021889813004226</a>.","ama":"Bussone G, Schott R, Biermanns A, et al. Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams. <i>Journal of Applied Crystallography</i>. 2013;46(4):887-892. doi:<a href=\"https://doi.org/10.1107/s0021889813004226\">10.1107/s0021889813004226</a>"},"year":"2013","issue":"4","publication_identifier":{"issn":["0021-8898"]},"publication_status":"published","doi":"10.1107/s0021889813004226","title":"Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams","volume":46,"date_created":"2019-01-31T08:45:31Z","author":[{"full_name":"Bussone, Genziana","last_name":"Bussone","first_name":"Genziana"},{"last_name":"Schott","full_name":"Schott, Rüdiger","first_name":"Rüdiger"},{"first_name":"Andreas","last_name":"Biermanns","full_name":"Biermanns, Andreas"},{"full_name":"Davydok, Anton","last_name":"Davydok","first_name":"Anton"},{"first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter"},{"first_name":"Gerardina","full_name":"Carbone, Gerardina","last_name":"Carbone"},{"full_name":"Schülli, Tobias U.","last_name":"Schülli","first_name":"Tobias U."},{"first_name":"Andreas D.","full_name":"Wieck, Andreas D.","last_name":"Wieck"},{"full_name":"Pietsch, Ullrich","last_name":"Pietsch","first_name":"Ullrich"}],"date_updated":"2022-01-06T07:03:32Z","publisher":"International Union of Crystallography (IUCr)","status":"public","publication":"Journal of Applied Crystallography","type":"journal_article","language":[{"iso":"eng"}],"department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","_id":"7286"},{"status":"public","publication":"Physical Review B","type":"journal_article","language":[{"iso":"eng"}],"department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","_id":"7287","intvolume":"        87","citation":{"ama":"Wang DQ, Chen JCH, Klochan O, et al. Influence of surface states on quantum and transport lifetimes in high-quality undoped heterostructures. <i>Physical Review B</i>. 2013;87(19). doi:<a href=\"https://doi.org/10.1103/physrevb.87.195313\">10.1103/physrevb.87.195313</a>","chicago":"Wang, D. Q., J. C. H. Chen, O. Klochan, K. Das Gupta, Dirk Reuter, A. D. Wieck, D. A. Ritchie, and A. R. Hamilton. “Influence of Surface States on Quantum and Transport Lifetimes in High-Quality Undoped Heterostructures.” <i>Physical Review B</i> 87, no. 19 (2013). <a href=\"https://doi.org/10.1103/physrevb.87.195313\">https://doi.org/10.1103/physrevb.87.195313</a>.","ieee":"D. Q. Wang <i>et al.</i>, “Influence of surface states on quantum and transport lifetimes in high-quality undoped heterostructures,” <i>Physical Review B</i>, vol. 87, no. 19, 2013.","apa":"Wang, D. Q., Chen, J. C. H., Klochan, O., Das Gupta, K., Reuter, D., Wieck, A. D., … Hamilton, A. R. (2013). Influence of surface states on quantum and transport lifetimes in high-quality undoped heterostructures. <i>Physical Review B</i>, <i>87</i>(19). <a href=\"https://doi.org/10.1103/physrevb.87.195313\">https://doi.org/10.1103/physrevb.87.195313</a>","bibtex":"@article{Wang_Chen_Klochan_Das Gupta_Reuter_Wieck_Ritchie_Hamilton_2013, title={Influence of surface states on quantum and transport lifetimes in high-quality undoped heterostructures}, volume={87}, DOI={<a href=\"https://doi.org/10.1103/physrevb.87.195313\">10.1103/physrevb.87.195313</a>}, number={19}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Wang, D. Q. and Chen, J. C. H. and Klochan, O. and Das Gupta, K. and Reuter, Dirk and Wieck, A. D. and Ritchie, D. A. and Hamilton, A. R.}, year={2013} }","short":"D.Q. Wang, J.C.H. Chen, O. Klochan, K. Das Gupta, D. Reuter, A.D. Wieck, D.A. Ritchie, A.R. Hamilton, Physical Review B 87 (2013).","mla":"Wang, D. Q., et al. “Influence of Surface States on Quantum and Transport Lifetimes in High-Quality Undoped Heterostructures.” <i>Physical Review B</i>, vol. 87, no. 19, American Physical Society (APS), 2013, doi:<a href=\"https://doi.org/10.1103/physrevb.87.195313\">10.1103/physrevb.87.195313</a>."},"year":"2013","issue":"19","publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","doi":"10.1103/physrevb.87.195313","title":"Influence of surface states on quantum and transport lifetimes in high-quality undoped heterostructures","volume":87,"date_created":"2019-01-31T08:46:35Z","author":[{"last_name":"Wang","full_name":"Wang, D. Q.","first_name":"D. Q."},{"full_name":"Chen, J. C. H.","last_name":"Chen","first_name":"J. C. H."},{"last_name":"Klochan","full_name":"Klochan, O.","first_name":"O."},{"first_name":"K.","last_name":"Das Gupta","full_name":"Das Gupta, K."},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"last_name":"Wieck","full_name":"Wieck, A. D.","first_name":"A. D."},{"last_name":"Ritchie","full_name":"Ritchie, D. A.","first_name":"D. A."},{"last_name":"Hamilton","full_name":"Hamilton, A. R.","first_name":"A. R."}],"publisher":"American Physical Society (APS)","date_updated":"2022-01-06T07:03:32Z"}]