[{"publication_status":"published","publication_identifier":{"issn":["1742-6596"]},"citation":{"bibtex":"@article{Lo_Guo_Ney_Ney_Chern_Melnikov_Pezzagna_Reuter_Wieck_Massies_2011, title={Structural, optical, and magnetic properties of Ho-implanted GaN thin films}, volume={266}, DOI={<a href=\"https://doi.org/10.1088/1742-6596/266/1/012097\">10.1088/1742-6596/266/1/012097</a>}, number={012097}, journal={Journal of Physics: Conference Series}, publisher={IOP Publishing}, author={Lo, F-Y and Guo, J-Y and Ney, V and Ney, A and Chern, M-Y and Melnikov, A and Pezzagna, S and Reuter, Dirk and Wieck, A D and Massies, J}, year={2011} }","short":"F.-Y. Lo, J.-Y. Guo, V. Ney, A. Ney, M.-Y. Chern, A. Melnikov, S. Pezzagna, D. Reuter, A.D. Wieck, J. Massies, Journal of Physics: Conference Series 266 (2011).","mla":"Lo, F. Y., et al. “Structural, Optical, and Magnetic Properties of Ho-Implanted GaN Thin Films.” <i>Journal of Physics: Conference Series</i>, vol. 266, 012097, IOP Publishing, 2011, doi:<a href=\"https://doi.org/10.1088/1742-6596/266/1/012097\">10.1088/1742-6596/266/1/012097</a>.","apa":"Lo, F.-Y., Guo, J.-Y., Ney, V., Ney, A., Chern, M.-Y., Melnikov, A., … Massies, J. (2011). Structural, optical, and magnetic properties of Ho-implanted GaN thin films. <i>Journal of Physics: Conference Series</i>, <i>266</i>. <a href=\"https://doi.org/10.1088/1742-6596/266/1/012097\">https://doi.org/10.1088/1742-6596/266/1/012097</a>","chicago":"Lo, F-Y, J-Y Guo, V Ney, A Ney, M-Y Chern, A Melnikov, S Pezzagna, Dirk Reuter, A D Wieck, and J Massies. “Structural, Optical, and Magnetic Properties of Ho-Implanted GaN Thin Films.” <i>Journal of Physics: Conference Series</i> 266 (2011). <a href=\"https://doi.org/10.1088/1742-6596/266/1/012097\">https://doi.org/10.1088/1742-6596/266/1/012097</a>.","ieee":"F.-Y. Lo <i>et al.</i>, “Structural, optical, and magnetic properties of Ho-implanted GaN thin films,” <i>Journal of Physics: Conference Series</i>, vol. 266, 2011.","ama":"Lo F-Y, Guo J-Y, Ney V, et al. Structural, optical, and magnetic properties of Ho-implanted GaN thin films. <i>Journal of Physics: Conference Series</i>. 2011;266. doi:<a href=\"https://doi.org/10.1088/1742-6596/266/1/012097\">10.1088/1742-6596/266/1/012097</a>"},"intvolume":"       266","year":"2011","author":[{"first_name":"F-Y","full_name":"Lo, F-Y","last_name":"Lo"},{"first_name":"J-Y","last_name":"Guo","full_name":"Guo, J-Y"},{"full_name":"Ney, V","last_name":"Ney","first_name":"V"},{"first_name":"A","last_name":"Ney","full_name":"Ney, A"},{"full_name":"Chern, M-Y","last_name":"Chern","first_name":"M-Y"},{"full_name":"Melnikov, A","last_name":"Melnikov","first_name":"A"},{"first_name":"S","full_name":"Pezzagna, S","last_name":"Pezzagna"},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"last_name":"Wieck","full_name":"Wieck, A D","first_name":"A D"},{"last_name":"Massies","full_name":"Massies, J","first_name":"J"}],"date_created":"2019-02-14T10:38:13Z","volume":266,"publisher":"IOP Publishing","date_updated":"2022-01-06T07:03:45Z","doi":"10.1088/1742-6596/266/1/012097","title":"Structural, optical, and magnetic properties of Ho-implanted GaN thin films","type":"journal_article","publication":"Journal of Physics: Conference Series","status":"public","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"7715","language":[{"iso":"eng"}],"article_number":"012097"},{"publication_status":"published","citation":{"apa":"Cerchez, M., Tarasov, A., Hugger, S., Xu, H., Heinzel, T., Zozoulenko, I. V., … Cheong, H. (2011). Towards the quantized magnetic confinement in quantum wires. AIP. <a href=\"https://doi.org/10.1063/1.3666392\">https://doi.org/10.1063/1.3666392</a>","bibtex":"@inproceedings{Cerchez_Tarasov_Hugger_Xu_Heinzel_Zozoulenko_Gasser-Szerer_Reuter_Wieck_Ihm_et al._2011, title={Towards the quantized magnetic confinement in quantum wires}, DOI={<a href=\"https://doi.org/10.1063/1.3666392\">10.1063/1.3666392</a>}, publisher={AIP}, author={Cerchez, M. and Tarasov, A. and Hugger, S. and Xu, Hengyi and Heinzel, T. and Zozoulenko, I. V. and Gasser-Szerer, U. and Reuter, Dirk and Wieck, A. D. and Ihm, Jisoon and et al.}, year={2011} }","mla":"Cerchez, M., et al. <i>Towards the Quantized Magnetic Confinement in Quantum Wires</i>. AIP, 2011, doi:<a href=\"https://doi.org/10.1063/1.3666392\">10.1063/1.3666392</a>.","short":"M. Cerchez, A. Tarasov, S. Hugger, H. Xu, T. Heinzel, I.V. Zozoulenko, U. Gasser-Szerer, D. Reuter, A.D. Wieck, J. Ihm, H. Cheong, in: AIP, 2011.","ama":"Cerchez M, Tarasov A, Hugger S, et al. Towards the quantized magnetic confinement in quantum wires. In: AIP; 2011. doi:<a href=\"https://doi.org/10.1063/1.3666392\">10.1063/1.3666392</a>","chicago":"Cerchez, M., A. Tarasov, S. Hugger, Hengyi Xu, T. Heinzel, I. V. Zozoulenko, U. Gasser-Szerer, et al. “Towards the Quantized Magnetic Confinement in Quantum Wires.” AIP, 2011. <a href=\"https://doi.org/10.1063/1.3666392\">https://doi.org/10.1063/1.3666392</a>.","ieee":"M. Cerchez <i>et al.</i>, “Towards the quantized magnetic confinement in quantum wires,” 2011."},"year":"2011","author":[{"first_name":"M.","full_name":"Cerchez, M.","last_name":"Cerchez"},{"full_name":"Tarasov, A.","last_name":"Tarasov","first_name":"A."},{"first_name":"S.","last_name":"Hugger","full_name":"Hugger, S."},{"first_name":"Hengyi","full_name":"Xu, Hengyi","last_name":"Xu"},{"last_name":"Heinzel","full_name":"Heinzel, T.","first_name":"T."},{"first_name":"I. V.","full_name":"Zozoulenko, I. V.","last_name":"Zozoulenko"},{"last_name":"Gasser-Szerer","full_name":"Gasser-Szerer, U.","first_name":"U."},{"first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter"},{"first_name":"A. D.","full_name":"Wieck, A. D.","last_name":"Wieck"},{"full_name":"Ihm, Jisoon","last_name":"Ihm","first_name":"Jisoon"},{"last_name":"Cheong","full_name":"Cheong, Hyeonsik","first_name":"Hyeonsik"}],"date_created":"2019-02-14T10:39:07Z","publisher":"AIP","date_updated":"2022-01-06T07:03:45Z","doi":"10.1063/1.3666392","title":"Towards the quantized magnetic confinement in quantum wires","type":"conference","status":"public","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","_id":"7716","language":[{"iso":"eng"}]},{"doi":"10.1063/1.3666398","title":"All-electrical transport spectroscopy of non-equilibrium many-particle states in self-assembled quantum dots","author":[{"full_name":"Marquardt, Bastian","last_name":"Marquardt","first_name":"Bastian"},{"first_name":"Martin","full_name":"Geller, Martin","last_name":"Geller"},{"full_name":"Baxevanis, Benjamin","last_name":"Baxevanis","first_name":"Benjamin"},{"first_name":"Daniela","full_name":"Pfannkuche, Daniela","last_name":"Pfannkuche"},{"last_name":"Wieck","full_name":"Wieck, Andreas D.","first_name":"Andreas D."},{"first_name":"Dirk","id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter"},{"first_name":"Axel","full_name":"Lorke, Axel","last_name":"Lorke"},{"full_name":"Ihm, Jisoon","last_name":"Ihm","first_name":"Jisoon"},{"last_name":"Cheong","full_name":"Cheong, Hyeonsik","first_name":"Hyeonsik"}],"date_created":"2019-02-14T10:40:14Z","publisher":"AIP","date_updated":"2022-01-06T07:03:45Z","citation":{"chicago":"Marquardt, Bastian, Martin Geller, Benjamin Baxevanis, Daniela Pfannkuche, Andreas D. Wieck, Dirk Reuter, Axel Lorke, Jisoon Ihm, and Hyeonsik Cheong. “All-Electrical Transport Spectroscopy of Non-Equilibrium Many-Particle States in Self-Assembled Quantum Dots.” AIP, 2011. <a href=\"https://doi.org/10.1063/1.3666398\">https://doi.org/10.1063/1.3666398</a>.","ieee":"B. Marquardt <i>et al.</i>, “All-electrical transport spectroscopy of non-equilibrium many-particle states in self-assembled quantum dots,” 2011.","ama":"Marquardt B, Geller M, Baxevanis B, et al. All-electrical transport spectroscopy of non-equilibrium many-particle states in self-assembled quantum dots. In: AIP; 2011. doi:<a href=\"https://doi.org/10.1063/1.3666398\">10.1063/1.3666398</a>","mla":"Marquardt, Bastian, et al. <i>All-Electrical Transport Spectroscopy of Non-Equilibrium Many-Particle States in Self-Assembled Quantum Dots</i>. AIP, 2011, doi:<a href=\"https://doi.org/10.1063/1.3666398\">10.1063/1.3666398</a>.","bibtex":"@inproceedings{Marquardt_Geller_Baxevanis_Pfannkuche_Wieck_Reuter_Lorke_Ihm_Cheong_2011, title={All-electrical transport spectroscopy of non-equilibrium many-particle states in self-assembled quantum dots}, DOI={<a href=\"https://doi.org/10.1063/1.3666398\">10.1063/1.3666398</a>}, publisher={AIP}, author={Marquardt, Bastian and Geller, Martin and Baxevanis, Benjamin and Pfannkuche, Daniela and Wieck, Andreas D. and Reuter, Dirk and Lorke, Axel and Ihm, Jisoon and Cheong, Hyeonsik}, year={2011} }","short":"B. Marquardt, M. Geller, B. Baxevanis, D. Pfannkuche, A.D. Wieck, D. Reuter, A. Lorke, J. Ihm, H. Cheong, in: AIP, 2011.","apa":"Marquardt, B., Geller, M., Baxevanis, B., Pfannkuche, D., Wieck, A. D., Reuter, D., … Cheong, H. (2011). All-electrical transport spectroscopy of non-equilibrium many-particle states in self-assembled quantum dots. AIP. <a href=\"https://doi.org/10.1063/1.3666398\">https://doi.org/10.1063/1.3666398</a>"},"year":"2011","publication_status":"published","language":[{"iso":"eng"}],"user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"7717","status":"public","type":"conference"},{"status":"public","type":"conference","language":[{"iso":"eng"}],"department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","_id":"7718","citation":{"ama":"van der Wal CH, Sladkov M, Chaubal AU, et al. Electromagnetically induced transparency in low-doped n-GaAs. In: AIP; 2011. doi:<a href=\"https://doi.org/10.1063/1.3666734\">10.1063/1.3666734</a>","ieee":"C. H. van der Wal <i>et al.</i>, “Electromagnetically induced transparency in low-doped n-GaAs,” 2011.","chicago":"Wal, C. H. van der, M. Sladkov, A. U. Chaubal, M. P. Bakker, A. R. Onur, Dirk Reuter, A. D. Wieck, Jisoon Ihm, and Hyeonsik Cheong. “Electromagnetically Induced Transparency in Low-Doped n-GaAs.” AIP, 2011. <a href=\"https://doi.org/10.1063/1.3666734\">https://doi.org/10.1063/1.3666734</a>.","short":"C.H. van der Wal, M. Sladkov, A.U. Chaubal, M.P. Bakker, A.R. Onur, D. Reuter, A.D. Wieck, J. Ihm, H. Cheong, in: AIP, 2011.","mla":"van der Wal, C. H., et al. <i>Electromagnetically Induced Transparency in Low-Doped n-GaAs</i>. AIP, 2011, doi:<a href=\"https://doi.org/10.1063/1.3666734\">10.1063/1.3666734</a>.","bibtex":"@inproceedings{van der Wal_Sladkov_Chaubal_Bakker_Onur_Reuter_Wieck_Ihm_Cheong_2011, title={Electromagnetically induced transparency in low-doped n-GaAs}, DOI={<a href=\"https://doi.org/10.1063/1.3666734\">10.1063/1.3666734</a>}, publisher={AIP}, author={van der Wal, C. H. and Sladkov, M. and Chaubal, A. U. and Bakker, M. P. and Onur, A. R. and Reuter, Dirk and Wieck, A. D. and Ihm, Jisoon and Cheong, Hyeonsik}, year={2011} }","apa":"van der Wal, C. H., Sladkov, M., Chaubal, A. U., Bakker, M. P., Onur, A. R., Reuter, D., … Cheong, H. (2011). Electromagnetically induced transparency in low-doped n-GaAs. AIP. <a href=\"https://doi.org/10.1063/1.3666734\">https://doi.org/10.1063/1.3666734</a>"},"year":"2011","publication_status":"published","doi":"10.1063/1.3666734","title":"Electromagnetically induced transparency in low-doped n-GaAs","author":[{"full_name":"van der Wal, C. H.","last_name":"van der Wal","first_name":"C. H."},{"full_name":"Sladkov, M.","last_name":"Sladkov","first_name":"M."},{"first_name":"A. U.","full_name":"Chaubal, A. U.","last_name":"Chaubal"},{"full_name":"Bakker, M. P.","last_name":"Bakker","first_name":"M. P."},{"first_name":"A. R.","last_name":"Onur","full_name":"Onur, A. R."},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"last_name":"Wieck","full_name":"Wieck, A. D.","first_name":"A. D."},{"last_name":"Ihm","full_name":"Ihm, Jisoon","first_name":"Jisoon"},{"last_name":"Cheong","full_name":"Cheong, Hyeonsik","first_name":"Hyeonsik"}],"date_created":"2019-02-14T10:40:59Z","publisher":"AIP","date_updated":"2022-01-06T07:03:45Z"},{"publisher":"AIP Publishing","date_updated":"2022-01-06T07:03:45Z","volume":109,"date_created":"2019-02-14T10:41:44Z","author":[{"full_name":"Chen, Y. S.","last_name":"Chen","first_name":"Y. S."},{"first_name":"J.","last_name":"Huang","full_name":"Huang, J."},{"last_name":"Ludwig","full_name":"Ludwig, A.","first_name":"A."},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"first_name":"A. D.","last_name":"Wieck","full_name":"Wieck, A. D."},{"first_name":"G.","last_name":"Bacher","full_name":"Bacher, G."}],"title":"Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil","doi":"10.1063/1.3530731","publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","issue":"1","year":"2011","intvolume":"       109","citation":{"chicago":"Chen, Y. S., J. Huang, A. Ludwig, Dirk Reuter, A. D. Wieck, and G. Bacher. “Manipulation of Nuclear Spin Dynamics in N-GaAs Using an on-Chip Microcoil.” <i>Journal of Applied Physics</i> 109, no. 1 (2011). <a href=\"https://doi.org/10.1063/1.3530731\">https://doi.org/10.1063/1.3530731</a>.","ieee":"Y. S. Chen, J. Huang, A. Ludwig, D. Reuter, A. D. Wieck, and G. Bacher, “Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil,” <i>Journal of Applied Physics</i>, vol. 109, no. 1, 2011.","ama":"Chen YS, Huang J, Ludwig A, Reuter D, Wieck AD, Bacher G. Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil. <i>Journal of Applied Physics</i>. 2011;109(1). doi:<a href=\"https://doi.org/10.1063/1.3530731\">10.1063/1.3530731</a>","mla":"Chen, Y. S., et al. “Manipulation of Nuclear Spin Dynamics in N-GaAs Using an on-Chip Microcoil.” <i>Journal of Applied Physics</i>, vol. 109, no. 1, 016106, AIP Publishing, 2011, doi:<a href=\"https://doi.org/10.1063/1.3530731\">10.1063/1.3530731</a>.","bibtex":"@article{Chen_Huang_Ludwig_Reuter_Wieck_Bacher_2011, title={Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil}, volume={109}, DOI={<a href=\"https://doi.org/10.1063/1.3530731\">10.1063/1.3530731</a>}, number={1016106}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Chen, Y. S. and Huang, J. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Bacher, G.}, year={2011} }","short":"Y.S. Chen, J. Huang, A. Ludwig, D. Reuter, A.D. Wieck, G. Bacher, Journal of Applied Physics 109 (2011).","apa":"Chen, Y. S., Huang, J., Ludwig, A., Reuter, D., Wieck, A. D., &#38; Bacher, G. (2011). Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil. <i>Journal of Applied Physics</i>, <i>109</i>(1). <a href=\"https://doi.org/10.1063/1.3530731\">https://doi.org/10.1063/1.3530731</a>"},"_id":"7719","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","article_number":"016106","language":[{"iso":"eng"}],"publication":"Journal of Applied Physics","type":"journal_article","status":"public"},{"issue":"9","year":"2011","date_created":"2018-09-20T11:33:31Z","publisher":"Institute of Electrical and Electronics Engineers (IEEE)","title":"Vibrational properties of the LiNbO3 z-surfaces","publication":"IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control","abstract":[{"lang":"eng","text":"The existence of localized vibrational modes both at the positive and at the negative LiNbO3 (0001) surface is demonstrated by means of first-principles calculations and Raman spectroscopy measurements. First, the phonon modes of the crystal bulk and of the (0001) surface are calculated within the density functional theory. In a second step, the Raman spectra of LiNbO3 bulk and of the two surfaces are measured. The phonon modes localized at the two surfaces are found to be substantially different, and are also found to differ from the bulk modes. The calculated and measured frequencies are in agreement within the error of the method. Raman spectroscopy is shown to be sensitive to differences between bulk and surface and between positive and negative surface. It represents therefore an alternative method to determine the surface polarity, which does not exploit the pyroelectric or piezoelectric properties of the material."}],"language":[{"iso":"eng"}],"publication_status":"published","publication_identifier":{"issn":["0885-3010"]},"citation":{"ieee":"S. Sanna, G. Berth, W. Hahn, A. Widhalm, A. Zrenner, and W. G. Schmidt, “Vibrational properties of the LiNbO3 z-surfaces,” <i>IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control</i>, vol. 58, no. 9, pp. 1751–1756, 2011.","chicago":"Sanna, S., Gerhard Berth, W. Hahn, A. Widhalm, Artur Zrenner, and W. G. Schmidt. “Vibrational Properties of the LiNbO3 Z-Surfaces.” <i>IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control</i> 58, no. 9 (2011): 1751–56. <a href=\"https://doi.org/10.1109/tuffc.2011.2012\">https://doi.org/10.1109/tuffc.2011.2012</a>.","ama":"Sanna S, Berth G, Hahn W, Widhalm A, Zrenner A, Schmidt WG. Vibrational properties of the LiNbO3 z-surfaces. <i>IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control</i>. 2011;58(9):1751-1756. doi:<a href=\"https://doi.org/10.1109/tuffc.2011.2012\">10.1109/tuffc.2011.2012</a>","apa":"Sanna, S., Berth, G., Hahn, W., Widhalm, A., Zrenner, A., &#38; Schmidt, W. G. (2011). Vibrational properties of the LiNbO3 z-surfaces. <i>IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control</i>, <i>58</i>(9), 1751–1756. <a href=\"https://doi.org/10.1109/tuffc.2011.2012\">https://doi.org/10.1109/tuffc.2011.2012</a>","mla":"Sanna, S., et al. “Vibrational Properties of the LiNbO3 Z-Surfaces.” <i>IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control</i>, vol. 58, no. 9, Institute of Electrical and Electronics Engineers (IEEE), 2011, pp. 1751–56, doi:<a href=\"https://doi.org/10.1109/tuffc.2011.2012\">10.1109/tuffc.2011.2012</a>.","bibtex":"@article{Sanna_Berth_Hahn_Widhalm_Zrenner_Schmidt_2011, title={Vibrational properties of the LiNbO3 z-surfaces}, volume={58}, DOI={<a href=\"https://doi.org/10.1109/tuffc.2011.2012\">10.1109/tuffc.2011.2012</a>}, number={9}, journal={IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Sanna, S. and Berth, Gerhard and Hahn, W. and Widhalm, A. and Zrenner, Artur and Schmidt, W. G.}, year={2011}, pages={1751–1756} }","short":"S. Sanna, G. Berth, W. Hahn, A. Widhalm, A. Zrenner, W.G. Schmidt, IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control 58 (2011) 1751–1756."},"intvolume":"        58","page":"1751-1756","author":[{"first_name":"S.","last_name":"Sanna","full_name":"Sanna, S."},{"last_name":"Berth","id":"53","full_name":"Berth, Gerhard","first_name":"Gerhard"},{"last_name":"Hahn","full_name":"Hahn, W.","first_name":"W."},{"last_name":"Widhalm","full_name":"Widhalm, A.","first_name":"A."},{"full_name":"Zrenner, Artur","id":"606","orcid":"0000-0002-5190-0944","last_name":"Zrenner","first_name":"Artur"},{"first_name":"W. G.","last_name":"Schmidt","full_name":"Schmidt, W. G."}],"volume":58,"date_updated":"2022-01-06T07:01:09Z","doi":"10.1109/tuffc.2011.2012","type":"journal_article","status":"public","user_id":"49428","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"_id":"4544","article_type":"original"},{"volume":26,"date_created":"2018-09-20T11:36:28Z","author":[{"first_name":"V","full_name":"Wiedemeier, V","last_name":"Wiedemeier"},{"last_name":"Berth","full_name":"Berth, Gerhard","id":"53","first_name":"Gerhard"},{"id":"606","full_name":"Zrenner, Artur","orcid":"0000-0002-5190-0944","last_name":"Zrenner","first_name":"Artur"},{"last_name":"Larramendi","full_name":"Larramendi, E M","first_name":"E M"},{"last_name":"Woggon","full_name":"Woggon, U","first_name":"U"},{"first_name":"K","full_name":"Lischka, K","last_name":"Lischka"},{"last_name":"Schikora","full_name":"Schikora, D","first_name":"D"}],"date_updated":"2022-01-06T07:01:09Z","publisher":"IOP Publishing","doi":"10.1088/0268-1242/26/10/105023","title":"In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy","issue":"10","publication_identifier":{"issn":["0268-1242","1361-6641"]},"publication_status":"published","intvolume":"        26","citation":{"ieee":"V. Wiedemeier <i>et al.</i>, “In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy,” <i>Semiconductor Science and Technology</i>, vol. 26, no. 10, 2011.","chicago":"Wiedemeier, V, Gerhard Berth, Artur Zrenner, E M Larramendi, U Woggon, K Lischka, and D Schikora. “In Situ Characterization of ZnTe Epilayer Irradiation via Time-Resolved and Power-Density-Dependent Raman Spectroscopy.” <i>Semiconductor Science and Technology</i> 26, no. 10 (2011). <a href=\"https://doi.org/10.1088/0268-1242/26/10/105023\">https://doi.org/10.1088/0268-1242/26/10/105023</a>.","ama":"Wiedemeier V, Berth G, Zrenner A, et al. In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy. <i>Semiconductor Science and Technology</i>. 2011;26(10). doi:<a href=\"https://doi.org/10.1088/0268-1242/26/10/105023\">10.1088/0268-1242/26/10/105023</a>","bibtex":"@article{Wiedemeier_Berth_Zrenner_Larramendi_Woggon_Lischka_Schikora_2011, title={In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy}, volume={26}, DOI={<a href=\"https://doi.org/10.1088/0268-1242/26/10/105023\">10.1088/0268-1242/26/10/105023</a>}, number={10105023}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Wiedemeier, V and Berth, Gerhard and Zrenner, Artur and Larramendi, E M and Woggon, U and Lischka, K and Schikora, D}, year={2011} }","mla":"Wiedemeier, V., et al. “In Situ Characterization of ZnTe Epilayer Irradiation via Time-Resolved and Power-Density-Dependent Raman Spectroscopy.” <i>Semiconductor Science and Technology</i>, vol. 26, no. 10, 105023, IOP Publishing, 2011, doi:<a href=\"https://doi.org/10.1088/0268-1242/26/10/105023\">10.1088/0268-1242/26/10/105023</a>.","short":"V. Wiedemeier, G. Berth, A. Zrenner, E.M. Larramendi, U. Woggon, K. Lischka, D. Schikora, Semiconductor Science and Technology 26 (2011).","apa":"Wiedemeier, V., Berth, G., Zrenner, A., Larramendi, E. M., Woggon, U., Lischka, K., &#38; Schikora, D. (2011). In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy. <i>Semiconductor Science and Technology</i>, <i>26</i>(10). <a href=\"https://doi.org/10.1088/0268-1242/26/10/105023\">https://doi.org/10.1088/0268-1242/26/10/105023</a>"},"year":"2011","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"user_id":"49428","_id":"4545","language":[{"iso":"eng"}],"article_type":"original","article_number":"105023","publication":"Semiconductor Science and Technology","type":"journal_article","status":"public","abstract":[{"lang":"eng","text":"Laser irradiation damage in ZnTe epilayers was analyzed in situ by power-density-dependent and time-resolved micro-Raman spectroscopy. Damage by ablation or compound decomposition on the sample surface was revealed by the decrease of the ZnTe–nLO mode intensity with the increase of laser power density. The appearance of the peaks associated with the stronger crystalline-tellurium modes, tellurium aggregates and second-order Raman scattering at room temperature μ-Raman spectra was observed for higher power densities than 4.4 × 105 W cm−2. The Raman signal time transients of ZnTe–nLO and crystalline-tellurium modes reveal an exponential evolution of the laser irradiation damage and a fast formation of crystalline tellurium aggregates on the layer surface."}]},{"type":"conference","publication":"2011 Semiconductor Conference Dresden","abstract":[{"text":"Silicon oxynitride (SiON) layers for telecommunication device application are grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) for various gas compositions of SiH4, N2O and NH3. Processing and annealing effects on the oxynitride films were studied by Fourier Transform Infrared Spectroscopy (FTIR) and Atomic Force Microscopy (AFM) measurements. By reduction of the silane (SiH4) gas flow and enhancement of the PECVD deposition temperature, the absorption loss due to NH bands can be nearly completely erased. Furthermore the surface roughness can be reduced by decreasing the gas flow and rising the deposition temperature. First waveguide structures are introduced and their characterization is presented.","lang":"eng"}],"status":"public","_id":"4546","user_id":"49428","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"language":[{"iso":"eng"}],"publication_status":"published","publication_identifier":{"isbn":["9781457704314"]},"year":"2011","citation":{"apa":"Frers, T., Hett, T., Hilleringmann, U., Berth, G., Widhalm, A., &#38; Zrenner, A. (2011). Characterization of SiON integrated waveguides via FTIR and AFM measurements. In <i>2011 Semiconductor Conference Dresden</i>. Dresden, Germany: IEEE. <a href=\"https://doi.org/10.1109/scd.2011.6068744\">https://doi.org/10.1109/scd.2011.6068744</a>","short":"T. Frers, T. Hett, U. Hilleringmann, G. Berth, A. Widhalm, A. Zrenner, in: 2011 Semiconductor Conference Dresden, IEEE, 2011.","bibtex":"@inproceedings{Frers_Hett_Hilleringmann_Berth_Widhalm_Zrenner_2011, title={Characterization of SiON integrated waveguides via FTIR and AFM measurements}, DOI={<a href=\"https://doi.org/10.1109/scd.2011.6068744\">10.1109/scd.2011.6068744</a>}, booktitle={2011 Semiconductor Conference Dresden}, publisher={IEEE}, author={Frers, Torsten and Hett, Thomas and Hilleringmann, Ulrich and Berth, Gerhard and Widhalm, Alex and Zrenner, Artur}, year={2011} }","mla":"Frers, Torsten, et al. “Characterization of SiON Integrated Waveguides via FTIR and AFM Measurements.” <i>2011 Semiconductor Conference Dresden</i>, IEEE, 2011, doi:<a href=\"https://doi.org/10.1109/scd.2011.6068744\">10.1109/scd.2011.6068744</a>.","ama":"Frers T, Hett T, Hilleringmann U, Berth G, Widhalm A, Zrenner A. Characterization of SiON integrated waveguides via FTIR and AFM measurements. In: <i>2011 Semiconductor Conference Dresden</i>. IEEE; 2011. doi:<a href=\"https://doi.org/10.1109/scd.2011.6068744\">10.1109/scd.2011.6068744</a>","ieee":"T. Frers, T. Hett, U. Hilleringmann, G. Berth, A. Widhalm, and A. Zrenner, “Characterization of SiON integrated waveguides via FTIR and AFM measurements,” in <i>2011 Semiconductor Conference Dresden</i>, Dresden, Germany, 2011.","chicago":"Frers, Torsten, Thomas Hett, Ulrich Hilleringmann, Gerhard Berth, Alex Widhalm, and Artur Zrenner. “Characterization of SiON Integrated Waveguides via FTIR and AFM Measurements.” In <i>2011 Semiconductor Conference Dresden</i>. IEEE, 2011. <a href=\"https://doi.org/10.1109/scd.2011.6068744\">https://doi.org/10.1109/scd.2011.6068744</a>."},"date_updated":"2022-01-06T07:01:09Z","publisher":"IEEE","date_created":"2018-09-20T11:44:50Z","author":[{"first_name":"Torsten","full_name":"Frers, Torsten","last_name":"Frers"},{"last_name":"Hett","full_name":"Hett, Thomas","first_name":"Thomas"},{"first_name":"Ulrich","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann"},{"first_name":"Gerhard","full_name":"Berth, Gerhard","id":"53","last_name":"Berth"},{"first_name":"Alex","full_name":"Widhalm, Alex","last_name":"Widhalm"},{"first_name":"Artur","id":"606","full_name":"Zrenner, Artur","orcid":"0000-0002-5190-0944","last_name":"Zrenner"}],"title":"Characterization of SiON integrated waveguides via FTIR and AFM measurements","conference":{"end_date":"2011-09-28","location":"Dresden, Germany","name":"2011 Semiconductor Conference Dresden","start_date":"2011-09-27"},"doi":"10.1109/scd.2011.6068744"},{"type":"journal_article","publication":"Applied Physics Letters","status":"public","_id":"7311","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"article_number":"051102","language":[{"iso":"eng"}],"publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"issue":"5","year":"2011","citation":{"mla":"Soldat, Henning, et al. “Room Temperature Spin Relaxation Length in Spin Light-Emitting Diodes.” <i>Applied Physics Letters</i>, vol. 99, no. 5, 051102, AIP Publishing, 2011, doi:<a href=\"https://doi.org/10.1063/1.3622662\">10.1063/1.3622662</a>.","bibtex":"@article{Soldat_Li_Gerhardt_Hofmann_Ludwig_Ebbing_Reuter_Wieck_Stromberg_Keune_et al._2011, title={Room temperature spin relaxation length in spin light-emitting diodes}, volume={99}, DOI={<a href=\"https://doi.org/10.1063/1.3622662\">10.1063/1.3622662</a>}, number={5051102}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Soldat, Henning and Li, Mingyuan and Gerhardt, Nils C. and Hofmann, Martin R. and Ludwig, Arne and Ebbing, Astrid and Reuter, Dirk and Wieck, Andreas D. and Stromberg, Frank and Keune, Werner and et al.}, year={2011} }","short":"H. Soldat, M. Li, N.C. Gerhardt, M.R. Hofmann, A. Ludwig, A. Ebbing, D. Reuter, A.D. Wieck, F. Stromberg, W. Keune, H. Wende, Applied Physics Letters 99 (2011).","apa":"Soldat, H., Li, M., Gerhardt, N. C., Hofmann, M. R., Ludwig, A., Ebbing, A., … Wende, H. (2011). Room temperature spin relaxation length in spin light-emitting diodes. <i>Applied Physics Letters</i>, <i>99</i>(5). <a href=\"https://doi.org/10.1063/1.3622662\">https://doi.org/10.1063/1.3622662</a>","ama":"Soldat H, Li M, Gerhardt NC, et al. Room temperature spin relaxation length in spin light-emitting diodes. <i>Applied Physics Letters</i>. 2011;99(5). doi:<a href=\"https://doi.org/10.1063/1.3622662\">10.1063/1.3622662</a>","chicago":"Soldat, Henning, Mingyuan Li, Nils C. Gerhardt, Martin R. Hofmann, Arne Ludwig, Astrid Ebbing, Dirk Reuter, et al. “Room Temperature Spin Relaxation Length in Spin Light-Emitting Diodes.” <i>Applied Physics Letters</i> 99, no. 5 (2011). <a href=\"https://doi.org/10.1063/1.3622662\">https://doi.org/10.1063/1.3622662</a>.","ieee":"H. Soldat <i>et al.</i>, “Room temperature spin relaxation length in spin light-emitting diodes,” <i>Applied Physics Letters</i>, vol. 99, no. 5, 2011."},"intvolume":"        99","date_updated":"2022-01-06T07:03:34Z","publisher":"AIP Publishing","author":[{"first_name":"Henning","last_name":"Soldat","full_name":"Soldat, Henning"},{"last_name":"Li","full_name":"Li, Mingyuan","first_name":"Mingyuan"},{"first_name":"Nils C.","last_name":"Gerhardt","full_name":"Gerhardt, Nils C."},{"full_name":"Hofmann, Martin R.","last_name":"Hofmann","first_name":"Martin R."},{"first_name":"Arne","full_name":"Ludwig, Arne","last_name":"Ludwig"},{"last_name":"Ebbing","full_name":"Ebbing, Astrid","first_name":"Astrid"},{"first_name":"Dirk","last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk"},{"first_name":"Andreas D.","full_name":"Wieck, Andreas D.","last_name":"Wieck"},{"first_name":"Frank","full_name":"Stromberg, Frank","last_name":"Stromberg"},{"first_name":"Werner","full_name":"Keune, Werner","last_name":"Keune"},{"first_name":"Heiko","last_name":"Wende","full_name":"Wende, Heiko"}],"date_created":"2019-01-31T10:21:25Z","volume":99,"title":"Room temperature spin relaxation length in spin light-emitting diodes","doi":"10.1063/1.3622662"},{"status":"public","publication":"physica status solidi (c)","type":"journal_article","language":[{"iso":"eng"}],"_id":"7335","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","year":"2011","intvolume":"         9","page":"407-410","citation":{"ama":"Krenner HJ, Völk S, Schülein FJR, et al. Surface acoustic wave controlled carrier injection into self-assembled quantum dots and quantum posts. <i>physica status solidi (c)</i>. 2011;9(2):407-410. doi:<a href=\"https://doi.org/10.1002/pssc.201100236\">10.1002/pssc.201100236</a>","chicago":"Krenner, Hubert J., Stefan Völk, Florian J. R. Schülein, Florian Knall, Achim Wixforth, Dirk Reuter, Andreas D. Wieck, Hyochul Kim, Tuan A. Truong, and Pierre M. Petroff. “Surface Acoustic Wave Controlled Carrier Injection into Self-Assembled Quantum Dots and Quantum Posts.” <i>Physica Status Solidi (C)</i> 9, no. 2 (2011): 407–10. <a href=\"https://doi.org/10.1002/pssc.201100236\">https://doi.org/10.1002/pssc.201100236</a>.","ieee":"H. J. Krenner <i>et al.</i>, “Surface acoustic wave controlled carrier injection into self-assembled quantum dots and quantum posts,” <i>physica status solidi (c)</i>, vol. 9, no. 2, pp. 407–410, 2011.","apa":"Krenner, H. J., Völk, S., Schülein, F. J. R., Knall, F., Wixforth, A., Reuter, D., … Petroff, P. M. (2011). Surface acoustic wave controlled carrier injection into self-assembled quantum dots and quantum posts. <i>Physica Status Solidi (C)</i>, <i>9</i>(2), 407–410. <a href=\"https://doi.org/10.1002/pssc.201100236\">https://doi.org/10.1002/pssc.201100236</a>","bibtex":"@article{Krenner_Völk_Schülein_Knall_Wixforth_Reuter_Wieck_Kim_Truong_Petroff_2011, title={Surface acoustic wave controlled carrier injection into self-assembled quantum dots and quantum posts}, volume={9}, DOI={<a href=\"https://doi.org/10.1002/pssc.201100236\">10.1002/pssc.201100236</a>}, number={2}, journal={physica status solidi (c)}, publisher={Wiley}, author={Krenner, Hubert J. and Völk, Stefan and Schülein, Florian J. R. and Knall, Florian and Wixforth, Achim and Reuter, Dirk and Wieck, Andreas D. and Kim, Hyochul and Truong, Tuan A. and Petroff, Pierre M.}, year={2011}, pages={407–410} }","short":"H.J. Krenner, S. Völk, F.J.R. Schülein, F. Knall, A. Wixforth, D. Reuter, A.D. Wieck, H. Kim, T.A. Truong, P.M. Petroff, Physica Status Solidi (C) 9 (2011) 407–410.","mla":"Krenner, Hubert J., et al. “Surface Acoustic Wave Controlled Carrier Injection into Self-Assembled Quantum Dots and Quantum Posts.” <i>Physica Status Solidi (C)</i>, vol. 9, no. 2, Wiley, 2011, pp. 407–10, doi:<a href=\"https://doi.org/10.1002/pssc.201100236\">10.1002/pssc.201100236</a>."},"publication_identifier":{"issn":["1862-6351"]},"publication_status":"published","issue":"2","title":"Surface acoustic wave controlled carrier injection into self-assembled quantum dots and quantum posts","doi":"10.1002/pssc.201100236","date_updated":"2022-01-06T07:03:35Z","publisher":"Wiley","volume":9,"author":[{"full_name":"Krenner, Hubert J.","last_name":"Krenner","first_name":"Hubert J."},{"first_name":"Stefan","last_name":"Völk","full_name":"Völk, Stefan"},{"first_name":"Florian J. R.","full_name":"Schülein, Florian J. R.","last_name":"Schülein"},{"full_name":"Knall, Florian","last_name":"Knall","first_name":"Florian"},{"last_name":"Wixforth","full_name":"Wixforth, Achim","first_name":"Achim"},{"first_name":"Dirk","id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter"},{"first_name":"Andreas D.","full_name":"Wieck, Andreas D.","last_name":"Wieck"},{"first_name":"Hyochul","full_name":"Kim, Hyochul","last_name":"Kim"},{"first_name":"Tuan A.","full_name":"Truong, Tuan A.","last_name":"Truong"},{"first_name":"Pierre M.","full_name":"Petroff, Pierre M.","last_name":"Petroff"}],"date_created":"2019-01-31T11:18:49Z"},{"department":[{"_id":"15"},{"_id":"286"}],"user_id":"55706","_id":"4140","file_date_updated":"2018-08-27T12:29:34Z","article_type":"original","type":"journal_article","status":"public","volume":272,"author":[{"first_name":"M.","full_name":"Häberlen, M.","last_name":"Häberlen"},{"first_name":"B.","last_name":"Murphy","full_name":"Murphy, B."},{"full_name":"Stritzker, B.","last_name":"Stritzker","first_name":"B."},{"last_name":"Lindner","full_name":"Lindner, Jörg","id":"20797","first_name":"Jörg"}],"date_updated":"2022-01-06T07:00:23Z","doi":"10.1016/j.nimb.2011.01.092","publication_identifier":{"issn":["0168-583X"]},"has_accepted_license":"1","publication_status":"published","intvolume":"       272","page":"322-325","citation":{"chicago":"Häberlen, M., B. Murphy, B. Stritzker, and Jörg Lindner. “Relaxation of a Strained 3C-SiC(111) Thin Film on Silicon by He+ and O+ Ion Beam Defect Engineering.” <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i> 272 (2011): 322–25. <a href=\"https://doi.org/10.1016/j.nimb.2011.01.092\">https://doi.org/10.1016/j.nimb.2011.01.092</a>.","ieee":"M. Häberlen, B. Murphy, B. Stritzker, and J. Lindner, “Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering,” <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>, vol. 272, pp. 322–325, 2011.","ama":"Häberlen M, Murphy B, Stritzker B, Lindner J. Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering. <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>. 2011;272:322-325. doi:<a href=\"https://doi.org/10.1016/j.nimb.2011.01.092\">10.1016/j.nimb.2011.01.092</a>","mla":"Häberlen, M., et al. “Relaxation of a Strained 3C-SiC(111) Thin Film on Silicon by He+ and O+ Ion Beam Defect Engineering.” <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>, vol. 272, Elsevier BV, 2011, pp. 322–25, doi:<a href=\"https://doi.org/10.1016/j.nimb.2011.01.092\">10.1016/j.nimb.2011.01.092</a>.","short":"M. Häberlen, B. Murphy, B. Stritzker, J. Lindner, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 272 (2011) 322–325.","bibtex":"@article{Häberlen_Murphy_Stritzker_Lindner_2011, title={Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering}, volume={272}, DOI={<a href=\"https://doi.org/10.1016/j.nimb.2011.01.092\">10.1016/j.nimb.2011.01.092</a>}, journal={Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms}, publisher={Elsevier BV}, author={Häberlen, M. and Murphy, B. and Stritzker, B. and Lindner, Jörg}, year={2011}, pages={322–325} }","apa":"Häberlen, M., Murphy, B., Stritzker, B., &#38; Lindner, J. (2011). Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering. <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>, <i>272</i>, 322–325. <a href=\"https://doi.org/10.1016/j.nimb.2011.01.092\">https://doi.org/10.1016/j.nimb.2011.01.092</a>"},"language":[{"iso":"eng"}],"ddc":["530"],"publication":"Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms","file":[{"file_name":"Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering.pdf","access_level":"closed","file_id":"4141","file_size":772335,"date_created":"2018-08-27T12:29:34Z","creator":"hclaudia","date_updated":"2018-08-27T12:29:34Z","relation":"main_file","success":1,"content_type":"application/pdf"}],"abstract":[{"text":"In this paper we report on the successful reduction of tensile strain in a thin strained ion-beam\r\nsynthesized 3C-SiC(1 1 1) layer on silicon. The creation of a near-interface defect structure consisting\r\nof nanometric voids and stacking fault type defects by He ion implantation and subsequent annealing\r\nyields significant relaxation in the top SiC film. The microstructure of the defect layer is studied by transmission electron microscopy, and the strain state of the 3C-SiC layer was studied by high-resolution X-ray diffraction in a parallel beam configuration. Typical process conditions for the growth of GaN films on the SiC layer were emulated by high temperature treatments in a rapid thermal annealer or a quartz tube furnace. It is found that prolonged annealing at high temperatures leads to ripening of the voids and to a weaker reduction of the tensile strain. It is shown that this problem can be overcome by the co-implantation of oxygen ions to form highly thermally stable void/extended defect structures.","lang":"eng"}],"date_created":"2018-08-27T12:27:23Z","publisher":"Elsevier BV","title":"Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering","year":"2011"},{"ddc":["530"],"language":[{"iso":"eng"}],"abstract":[{"text":"This paper reports the successful reduction of tensile strain in a thin ion-beam-synthesized 3C-SiC(111) layer on silicon. Significant relaxation is achieved by creating a near-interface defect structure containing nanometric voids and dislocation loops by the implantation of He ions and subsequent thermal annealing. The structural features of this defect microstructure are investigated by transmission electron microscopy. High-resolution X-ray diffraction in a parallel beam configuration is used to quantify the strain state of the top SiC layer. Further annealing experiments were carried out in order to emulate typical process conditions for the growth of wide-bandgap semiconductors like, for example GaN. It is found that prolonged annealing at elevated temperatures leads to coarsening of the voids and to a much less efficient strain reduction. We show that this issue can be resolved by the co-implantation of oxygen to form highly thermally stable cavity/extended defect structures. The technique presented here may be useful for a variety of other thermally mismatched bulk/thin film couples as well.","lang":"eng"}],"file":[{"date_updated":"2018-08-27T12:32:07Z","creator":"hclaudia","date_created":"2018-08-27T12:32:07Z","file_size":152623,"access_level":"closed","file_id":"4143","file_name":"Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation.pdf","content_type":"application/pdf","success":1,"relation":"main_file"}],"publication":"physica status solidi (c)","title":"Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation","publisher":"Wiley","date_created":"2018-08-27T12:31:20Z","year":"2011","issue":"3","article_type":"original","file_date_updated":"2018-08-27T12:32:07Z","_id":"4142","user_id":"55706","department":[{"_id":"286"}],"status":"public","type":"journal_article","doi":"10.1002/pssc.201000342","date_updated":"2022-01-06T07:00:24Z","author":[{"first_name":"Maik","full_name":"Häberlen, Maik","last_name":"Häberlen"},{"first_name":"Brian","full_name":"Murphy, Brian","last_name":"Murphy"},{"full_name":"Stritzker, Bernd","last_name":"Stritzker","first_name":"Bernd"},{"first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg","id":"20797"}],"volume":8,"citation":{"mla":"Häberlen, Maik, et al. “Decoupling of a Strained 3C-SiC(111) Thin Film on Silicon by He+ and O+ Ion Implantation.” <i>Physica Status Solidi (C)</i>, vol. 8, no. 3, Wiley, 2011, pp. 944–47, doi:<a href=\"https://doi.org/10.1002/pssc.201000342\">10.1002/pssc.201000342</a>.","short":"M. Häberlen, B. Murphy, B. Stritzker, J. Lindner, Physica Status Solidi (C) 8 (2011) 944–947.","bibtex":"@article{Häberlen_Murphy_Stritzker_Lindner_2011, title={Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation}, volume={8}, DOI={<a href=\"https://doi.org/10.1002/pssc.201000342\">10.1002/pssc.201000342</a>}, number={3}, journal={physica status solidi (c)}, publisher={Wiley}, author={Häberlen, Maik and Murphy, Brian and Stritzker, Bernd and Lindner, Jörg}, year={2011}, pages={944–947} }","apa":"Häberlen, M., Murphy, B., Stritzker, B., &#38; Lindner, J. (2011). Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation. <i>Physica Status Solidi (C)</i>, <i>8</i>(3), 944–947. <a href=\"https://doi.org/10.1002/pssc.201000342\">https://doi.org/10.1002/pssc.201000342</a>","ama":"Häberlen M, Murphy B, Stritzker B, Lindner J. Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation. <i>physica status solidi (c)</i>. 2011;8(3):944-947. doi:<a href=\"https://doi.org/10.1002/pssc.201000342\">10.1002/pssc.201000342</a>","ieee":"M. Häberlen, B. Murphy, B. Stritzker, and J. Lindner, “Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation,” <i>physica status solidi (c)</i>, vol. 8, no. 3, pp. 944–947, 2011.","chicago":"Häberlen, Maik, Brian Murphy, Bernd Stritzker, and Jörg Lindner. “Decoupling of a Strained 3C-SiC(111) Thin Film on Silicon by He+ and O+ Ion Implantation.” <i>Physica Status Solidi (C)</i> 8, no. 3 (2011): 944–47. <a href=\"https://doi.org/10.1002/pssc.201000342\">https://doi.org/10.1002/pssc.201000342</a>."},"page":"944-947","intvolume":"         8","publication_status":"published","has_accepted_license":"1","publication_identifier":{"issn":["1862-6351"]}},{"title":"Photoluminescence properties of Sm2+-doped BaBr2 under hydrostatic pressure","publisher":"Elsevier BV","date_created":"2018-08-27T12:44:42Z","year":"2011","issue":"11","ddc":["530"],"language":[{"iso":"eng"}],"abstract":[{"lang":"eng","text":"Photoluminescence spectra of Sm^(2+)-doped BaBr^2 have been measured under hydrostatic pressures up to 17 GPa at room temperature. In the low pressure range a red-shift of the broad 5d–4f transition of -145 cm^(-1)/GPa is observed. From 5 to 8 GPa a phase mixtureof the initial orthorhombic phase and the high-pressure monoclinic phase gives rise to two 5d–4f bands, which are strongly overlapping. Above 8 GPa the crystalis completely transformed to its high-pressure phase where two different Sm2^(2+) sites exist, but only one broad 5d–4f transition is detected. It exhibits are d-shift of -36 cm^(-1)/GPa. In addition,the line shifts of the (_^5)D_0→(_^7)F_J  (J=0,1,2)   transitions are investigated. Linear shifts of -19cm^(-1)/GPa  for J=0,2 and of -13cm^(-1)/GPa for J01 are observed in the pressure range from 0 to 5 GPa."}],"file":[{"creator":"hclaudia","date_created":"2018-08-27T12:45:30Z","date_updated":"2018-08-27T12:45:30Z","file_id":"4149","file_name":"Photoluminescence properties of Sm(2+)-doped BaBr2 under hydrostatic pressure.pdf","access_level":"closed","file_size":279989,"content_type":"application/pdf","relation":"main_file","success":1}],"publication":"Journal of Luminescence","doi":"10.1016/j.jlumin.2011.05.035","date_updated":"2022-01-06T07:00:25Z","volume":131,"author":[{"first_name":"Marie Christin","full_name":"Wiegand, Marie Christin","last_name":"Wiegand"},{"first_name":"Werner","full_name":"Sievers, Werner","last_name":"Sievers"},{"full_name":"Lindner, Jörg","id":"20797","last_name":"Lindner","first_name":"Jörg"},{"first_name":"Th.","full_name":"Tröster, Th.","last_name":"Tröster"},{"first_name":"S.","last_name":"Schweizer","full_name":"Schweizer, S."}],"intvolume":"       131","page":"2400-2403","citation":{"ama":"Wiegand MC, Sievers W, Lindner J, Tröster T, Schweizer S. Photoluminescence properties of Sm2+-doped BaBr2 under hydrostatic pressure. <i>Journal of Luminescence</i>. 2011;131(11):2400-2403. doi:<a href=\"https://doi.org/10.1016/j.jlumin.2011.05.035\">10.1016/j.jlumin.2011.05.035</a>","chicago":"Wiegand, Marie Christin, Werner Sievers, Jörg Lindner, Th. Tröster, and S. Schweizer. “Photoluminescence Properties of Sm2+-Doped BaBr2 under Hydrostatic Pressure.” <i>Journal of Luminescence</i> 131, no. 11 (2011): 2400–2403. <a href=\"https://doi.org/10.1016/j.jlumin.2011.05.035\">https://doi.org/10.1016/j.jlumin.2011.05.035</a>.","ieee":"M. C. Wiegand, W. Sievers, J. Lindner, T. Tröster, and S. Schweizer, “Photoluminescence properties of Sm2+-doped BaBr2 under hydrostatic pressure,” <i>Journal of Luminescence</i>, vol. 131, no. 11, pp. 2400–2403, 2011.","mla":"Wiegand, Marie Christin, et al. “Photoluminescence Properties of Sm2+-Doped BaBr2 under Hydrostatic Pressure.” <i>Journal of Luminescence</i>, vol. 131, no. 11, Elsevier BV, 2011, pp. 2400–03, doi:<a href=\"https://doi.org/10.1016/j.jlumin.2011.05.035\">10.1016/j.jlumin.2011.05.035</a>.","bibtex":"@article{Wiegand_Sievers_Lindner_Tröster_Schweizer_2011, title={Photoluminescence properties of Sm2+-doped BaBr2 under hydrostatic pressure}, volume={131}, DOI={<a href=\"https://doi.org/10.1016/j.jlumin.2011.05.035\">10.1016/j.jlumin.2011.05.035</a>}, number={11}, journal={Journal of Luminescence}, publisher={Elsevier BV}, author={Wiegand, Marie Christin and Sievers, Werner and Lindner, Jörg and Tröster, Th. and Schweizer, S.}, year={2011}, pages={2400–2403} }","short":"M.C. Wiegand, W. Sievers, J. Lindner, T. Tröster, S. Schweizer, Journal of Luminescence 131 (2011) 2400–2403.","apa":"Wiegand, M. C., Sievers, W., Lindner, J., Tröster, T., &#38; Schweizer, S. (2011). Photoluminescence properties of Sm2+-doped BaBr2 under hydrostatic pressure. <i>Journal of Luminescence</i>, <i>131</i>(11), 2400–2403. <a href=\"https://doi.org/10.1016/j.jlumin.2011.05.035\">https://doi.org/10.1016/j.jlumin.2011.05.035</a>"},"publication_identifier":{"issn":["0022-2313"]},"has_accepted_license":"1","publication_status":"published","article_type":"original","file_date_updated":"2018-08-27T12:45:30Z","_id":"4148","department":[{"_id":"15"},{"_id":"286"}],"user_id":"55706","status":"public","type":"journal_article"},{"intvolume":"        84","citation":{"ama":"Zirkelbach F, Stritzker B, Nordlund K, Lindner J, Schmidt WG, Rauls E. Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon. <i>Physical Review B</i>. 2011;84(6). doi:<a href=\"https://doi.org/10.1103/physrevb.84.064126\">10.1103/physrevb.84.064126</a>","ieee":"F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W. G. Schmidt, and E. Rauls, “Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon,” <i>Physical Review B</i>, vol. 84, no. 6, 2011.","chicago":"Zirkelbach, F., B. Stritzker, K. Nordlund, Jörg Lindner, W. G. Schmidt, and E. Rauls. “Combinedab Initioand Classical Potential Simulation Study on Silicon Carbide Precipitation in Silicon.” <i>Physical Review B</i> 84, no. 6 (2011). <a href=\"https://doi.org/10.1103/physrevb.84.064126\">https://doi.org/10.1103/physrevb.84.064126</a>.","mla":"Zirkelbach, F., et al. “Combinedab Initioand Classical Potential Simulation Study on Silicon Carbide Precipitation in Silicon.” <i>Physical Review B</i>, vol. 84, no. 6, 064126, American Physical Society (APS), 2011, doi:<a href=\"https://doi.org/10.1103/physrevb.84.064126\">10.1103/physrevb.84.064126</a>.","bibtex":"@article{Zirkelbach_Stritzker_Nordlund_Lindner_Schmidt_Rauls_2011, title={Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon}, volume={84}, DOI={<a href=\"https://doi.org/10.1103/physrevb.84.064126\">10.1103/physrevb.84.064126</a>}, number={6064126}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Lindner, Jörg and Schmidt, W. G. and Rauls, E.}, year={2011} }","short":"F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W.G. Schmidt, E. Rauls, Physical Review B 84 (2011).","apa":"Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J., Schmidt, W. G., &#38; Rauls, E. (2011). Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon. <i>Physical Review B</i>, <i>84</i>(6). <a href=\"https://doi.org/10.1103/physrevb.84.064126\">https://doi.org/10.1103/physrevb.84.064126</a>"},"has_accepted_license":"1","publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","doi":"10.1103/physrevb.84.064126","date_updated":"2022-01-06T07:00:26Z","volume":84,"author":[{"first_name":"F.","last_name":"Zirkelbach","full_name":"Zirkelbach, F."},{"last_name":"Stritzker","full_name":"Stritzker, B.","first_name":"B."},{"last_name":"Nordlund","full_name":"Nordlund, K.","first_name":"K."},{"id":"20797","full_name":"Lindner, Jörg","last_name":"Lindner","first_name":"Jörg"},{"first_name":"W. G.","full_name":"Schmidt, W. G.","last_name":"Schmidt"},{"first_name":"E.","full_name":"Rauls, E.","last_name":"Rauls"}],"status":"public","type":"journal_article","article_number":"064126","article_type":"original","file_date_updated":"2018-08-27T13:18:53Z","_id":"4150","department":[{"_id":"15"},{"_id":"286"}],"user_id":"55706","year":"2011","issue":"6","title":"Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon","publisher":"American Physical Society (APS)","date_created":"2018-08-27T13:17:45Z","abstract":[{"lang":"eng","text":"Atomistic simulations on the silicon carbide precipitation in bulk silicon employing both, classical potential and\r\nfirst-principlesmethods are presented. The calculations aim at a comprehensive,microscopic understanding of the\r\nprecipitation mechanism in the context of controversial discussions in the literature. For the quantum-mechanical\r\ntreatment, basic processes assumed in the precipitation process are calculated in feasible systems of small\r\nsize. The migration mechanism of a carbon \u0002100\u0003 interstitial and silicon \u000211 0\u0003 self-interstitial in otherwise\r\ndefect-free silicon are investigated using density functional theory calculations. The influence of a nearby\r\nvacancy, another carbon interstitial and a substitutional defect as well as a silicon self-interstitial has been\r\ninvestigated systematically. Interactions of various combinations of defects have been characterized including a\r\ncouple of selected migration pathways within these configurations. Most of the investigated pairs of defects tend\r\nto agglomerate allowing for a reduction in strain. The formation of structures involving strong carbon–carbon\r\nbonds turns out to be very unlikely. In contrast, substitutional carbon occurs in all probability. A long range\r\ncapture radius has been observed for pairs of interstitial carbon as well as interstitial carbon and vacancies. A\r\nrather small capture radius is predicted for substitutional carbon and silicon self-interstitials. Initial assumptions\r\nregarding the precipitation mechanism of silicon carbide in bulk silicon are established and conformability to\r\nexperimental findings is discussed. Furthermore, results of the accurate first-principles calculations on defects\r\nand carbon diffusion in silicon are compared to results of classical potential simulations revealing significant\r\nlimitations of the latter method. An approach to work around this problem is proposed. Finally, results of the\r\nclassical potential molecular dynamics simulations of large systems are examined, which reinforce previous\r\nassumptions and give further insight into basic processes involved in the silicon carbide transition."}],"file":[{"relation":"main_file","success":1,"content_type":"application/pdf","file_name":"Combined ab initio and classical potential simulation study on silicon carbide precipitation in silicon.pdf","access_level":"closed","file_id":"4151","file_size":1541698,"creator":"hclaudia","date_created":"2018-08-27T13:18:53Z","date_updated":"2018-08-27T13:18:53Z"}],"publication":"Physical Review B","ddc":["530"],"language":[{"iso":"eng"}]},{"keyword":["tet_topic_qd"],"_id":"4171","publication_date":"2011-11-24","department":[{"_id":"15"},{"_id":"290"}],"user_id":"158","abstract":[{"lang":"eng","text":"The method involves exciting a quantum system with photons in a polarization state. Two states of the quantum system are excited with linear horizontal and vertical polarizations that are orthogonal to each other, where the states exhibit an energetic gap smaller than energetic bandwidth of photons. The states are assigned based on the polarizations, where the quantum system is arranged in a superposition state. The quantum system is formed by a quantum bit that is formed as a two-level system."},{"text":"Die Erfindung betrifft ein Verfahren zur Übertragung des Polarisationszustandes von Photonen in ein stationäres System, bei dem mit Photonen eines Polarisationszustandes ein Quanten-System angeregt wird, das zwei Zustände aufweist, die mit zueinander orthogonalen Polarisationen anregbar sind und deren energetischer Abstand kleiner ist als die energetische Bandbreite der Photonen, wobei beide Zustände in Abhängigkeit von der Polarisation besetzt werden und das Quantensystem einen Superpositionszustand beider Zustände einnimmt.","lang":"eng"}],"status":"public","type":"patent","title":"Method for transmission of information about polarization state of photons to stationary system","ipn":"DE102010020817A1","main_file_link":[{"url":"https://patents.google.com/patent/DE102010020817A1/en"}],"application_number":"102010020817","ipc":"G01J 4/00","date_updated":"2022-01-06T07:00:28Z","date_created":"2018-08-28T08:46:40Z","author":[{"first_name":"Jens","id":"158","full_name":"Förstner, Jens","orcid":"0000-0001-7059-9862","last_name":"Förstner"},{"first_name":"D.","full_name":"Mantei, D.","last_name":"Mantei"},{"last_name":"de Vasconcellos","full_name":"de Vasconcellos, S. Michaelis ","first_name":"S. Michaelis "},{"first_name":"Artur","id":"606","full_name":"Zrenner, Artur","last_name":"Zrenner","orcid":"0000-0002-5190-0944"}],"year":"2011","application_date":"2010-05-18","citation":{"chicago":"Förstner, Jens, D. Mantei, S. Michaelis  de Vasconcellos, and Artur Zrenner. “Method for Transmission of Information about Polarization State of Photons to Stationary System,” 2011.","ieee":"J. Förstner, D. Mantei, S. M. de Vasconcellos, and A. Zrenner, “Method for transmission of information about polarization state of photons to stationary system.” 2011.","ama":"Förstner J, Mantei D, de Vasconcellos SM, Zrenner A. Method for transmission of information about polarization state of photons to stationary system. 2011.","apa":"Förstner, J., Mantei, D., de Vasconcellos, S. M., &#38; Zrenner, A. (2011). Method for transmission of information about polarization state of photons to stationary system.","short":"J. Förstner, D. Mantei, S.M. de Vasconcellos, A. Zrenner, (2011).","mla":"Förstner, Jens, et al. <i>Method for Transmission of Information about Polarization State of Photons to Stationary System</i>. 2011.","bibtex":"@article{Förstner_Mantei_de Vasconcellos_Zrenner_2011, title={Method for transmission of information about polarization state of photons to stationary system}, author={Förstner, Jens and Mantei, D. and de Vasconcellos, S. Michaelis  and Zrenner, Artur}, year={2011} }"}},{"language":[{"iso":"eng"}],"keyword":["Raman spectroscopy","ferroelectric domains","LiNbO3","confocal imaging"],"article_type":"original","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"user_id":"49428","_id":"4377","status":"public","abstract":[{"text":"Confocal Raman spectroscopy was performed as an archetype imaging method to study the ferroelectric domain structure of periodically poled lithium niobate. More precisely, the linkage out of spatial resolution and spectral information proved itself as very useful. Here a specific modulation of the Raman lines by the local variation of polarity and a non-symmetric measuring-signal across the domain structure were found, which allows for imaging of domain boundaries as well as oppositely orientated domains. The high potential of this method is demonstrated by the visualization of the ferroelectric domain structures based on various phonon modes.","lang":"eng"}],"publication":"Ferroelectrics","type":"journal_article","doi":"10.1080/00150193.2011.594774","title":"Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy","volume":420,"date_created":"2018-09-11T14:10:35Z","author":[{"full_name":"Berth, Gerhard","id":"53","last_name":"Berth","first_name":"Gerhard"},{"last_name":"Hahn","full_name":"Hahn, Wjatscheslaw","first_name":"Wjatscheslaw"},{"full_name":"Wiedemeier, Volker","last_name":"Wiedemeier","first_name":"Volker"},{"first_name":"Artur","orcid":"0000-0002-5190-0944","last_name":"Zrenner","full_name":"Zrenner, Artur","id":"606"},{"first_name":"Simone","last_name":"Sanna","full_name":"Sanna, Simone"},{"first_name":"Wolf Gero","full_name":"Schmidt, Wolf Gero","last_name":"Schmidt"}],"publisher":"Informa UK Limited","date_updated":"2022-01-06T07:01:00Z","intvolume":"       420","page":"44-48","citation":{"apa":"Berth, G., Hahn, W., Wiedemeier, V., Zrenner, A., Sanna, S., &#38; Schmidt, W. G. (2011). Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy. <i>Ferroelectrics</i>, <i>420</i>(1), 44–48. <a href=\"https://doi.org/10.1080/00150193.2011.594774\">https://doi.org/10.1080/00150193.2011.594774</a>","short":"G. Berth, W. Hahn, V. Wiedemeier, A. Zrenner, S. Sanna, W.G. Schmidt, Ferroelectrics 420 (2011) 44–48.","mla":"Berth, Gerhard, et al. “Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy.” <i>Ferroelectrics</i>, vol. 420, no. 1, Informa UK Limited, 2011, pp. 44–48, doi:<a href=\"https://doi.org/10.1080/00150193.2011.594774\">10.1080/00150193.2011.594774</a>.","bibtex":"@article{Berth_Hahn_Wiedemeier_Zrenner_Sanna_Schmidt_2011, title={Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy}, volume={420}, DOI={<a href=\"https://doi.org/10.1080/00150193.2011.594774\">10.1080/00150193.2011.594774</a>}, number={1}, journal={Ferroelectrics}, publisher={Informa UK Limited}, author={Berth, Gerhard and Hahn, Wjatscheslaw and Wiedemeier, Volker and Zrenner, Artur and Sanna, Simone and Schmidt, Wolf Gero}, year={2011}, pages={44–48} }","ama":"Berth G, Hahn W, Wiedemeier V, Zrenner A, Sanna S, Schmidt WG. Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy. <i>Ferroelectrics</i>. 2011;420(1):44-48. doi:<a href=\"https://doi.org/10.1080/00150193.2011.594774\">10.1080/00150193.2011.594774</a>","ieee":"G. Berth, W. Hahn, V. Wiedemeier, A. Zrenner, S. Sanna, and W. G. Schmidt, “Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy,” <i>Ferroelectrics</i>, vol. 420, no. 1, pp. 44–48, 2011.","chicago":"Berth, Gerhard, Wjatscheslaw Hahn, Volker Wiedemeier, Artur Zrenner, Simone Sanna, and Wolf Gero Schmidt. “Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy.” <i>Ferroelectrics</i> 420, no. 1 (2011): 44–48. <a href=\"https://doi.org/10.1080/00150193.2011.594774\">https://doi.org/10.1080/00150193.2011.594774</a>."},"year":"2011","issue":"1","publication_identifier":{"issn":["0015-0193","1563-5112"]},"publication_status":"published"},{"publication":"physica status solidi (c)","abstract":[{"lang":"eng","text":"Using a combined all-ultra-high-vacuum process employing lateral patterning with focused ion beams and molecular beam epitaxy, site-selective growth of single (In,Ga)As quantum dots is achieved. We have embedded such a layer of intentionally positioned quantum dots in the intrinsic region of a p-i-n junction so that the quantum dots can be driven electrically. In this contribution, we will present our results on the morphological properties of the ion-beam modified surface on which the quantum dot nucleation occurs together with a characterization of the electrical and optoelectronic properties. We will demonstrate that a single, individual quantum dot can directly be electrically addressed."}],"language":[{"iso":"eng"}],"keyword":["molecular beam epitaxy","quantum dot","site control","electroluminescence"],"issue":"4","year":"2011","date_created":"2018-09-11T14:15:28Z","publisher":"Wiley","title":"Electrically driven intentionally positioned single quantum dot","type":"journal_article","status":"public","user_id":"20798","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"287"}],"_id":"4378","article_type":"original","publication_status":"published","publication_identifier":{"issn":["1862-6351"]},"citation":{"bibtex":"@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2011, title={Electrically driven intentionally positioned single quantum dot}, volume={8}, DOI={<a href=\"https://doi.org/10.1002/pssc.201000828\">10.1002/pssc.201000828</a>}, number={4}, journal={physica status solidi (c)}, publisher={Wiley}, author={Mehta, Minisha and Reuter, Dirk and Wieck, Andreas D. and Michaelis de Vasconcellos, Steffen and Zrenner, Artur and Meier, Cedrik}, year={2011}, pages={1182–1185} }","mla":"Mehta, Minisha, et al. “Electrically Driven Intentionally Positioned Single Quantum Dot.” <i>Physica Status Solidi (C)</i>, vol. 8, no. 4, Wiley, 2011, pp. 1182–85, doi:<a href=\"https://doi.org/10.1002/pssc.201000828\">10.1002/pssc.201000828</a>.","short":"M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, C. Meier, Physica Status Solidi (C) 8 (2011) 1182–1185.","apa":"Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner, A., &#38; Meier, C. (2011). Electrically driven intentionally positioned single quantum dot. <i>Physica Status Solidi (C)</i>, <i>8</i>(4), 1182–1185. <a href=\"https://doi.org/10.1002/pssc.201000828\">https://doi.org/10.1002/pssc.201000828</a>","ama":"Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier C. Electrically driven intentionally positioned single quantum dot. <i>physica status solidi (c)</i>. 2011;8(4):1182-1185. doi:<a href=\"https://doi.org/10.1002/pssc.201000828\">10.1002/pssc.201000828</a>","chicago":"Mehta, Minisha, Dirk Reuter, Andreas D. Wieck, Steffen Michaelis de Vasconcellos, Artur Zrenner, and Cedrik Meier. “Electrically Driven Intentionally Positioned Single Quantum Dot.” <i>Physica Status Solidi (C)</i> 8, no. 4 (2011): 1182–85. <a href=\"https://doi.org/10.1002/pssc.201000828\">https://doi.org/10.1002/pssc.201000828</a>.","ieee":"M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier, “Electrically driven intentionally positioned single quantum dot,” <i>physica status solidi (c)</i>, vol. 8, no. 4, pp. 1182–1185, 2011."},"page":"1182-1185","intvolume":"         8","author":[{"last_name":"Mehta","full_name":"Mehta, Minisha","first_name":"Minisha"},{"last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk"},{"full_name":"Wieck, Andreas D.","last_name":"Wieck","first_name":"Andreas D."},{"last_name":"Michaelis de Vasconcellos","full_name":"Michaelis de Vasconcellos, Steffen","first_name":"Steffen"},{"orcid":"0000-0002-5190-0944","last_name":"Zrenner","full_name":"Zrenner, Artur","id":"606","first_name":"Artur"},{"first_name":"Cedrik","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572","id":"20798","full_name":"Meier, Cedrik"}],"volume":8,"date_updated":"2022-01-06T07:01:00Z","doi":"10.1002/pssc.201000828"},{"language":[{"iso":"eng"}],"keyword":["Porous Si","Layer transfer","Thin-film","Photovoltaics"],"abstract":[{"lang":"eng","text":"Uniform mesoporous Si double layers are formed on 4 inch p-type < 100> wafers with an off orientation of 6º towards < 111> by means of electrochemical etching in ethanoic-based HF electrolytes. These substrates are of interest for the epitaxial growth of III–V compound semiconductor stacks on their top for the production of multi-junction solar cells and very thin electronic devices. We demonstrate transfer of porous layers after an annealing process in hydrogen atmosphere. Electron Back-Scatter Diffraction analysis confirms that the substrate orientation is conserved during the etching and annealing steps. Confocal μ-Raman spectroscopy analysis shows a decrease in the Raman signal intensity after etching and a subsequent increase after annealing while no shift is observed. By means of Atomic Force Microscopy, analysis the surface appearance after the etching and annealing steps can be visualized. The mean surface roughness varies during the process from 0.55 nm for the unprocessed wafers to 0.27 nm after etching and 0.78 nm after annealing. The decrease of average roughness after etching is caused by an electropolishing step prior to porous formation. Despite of slight increase of mean surface roughness after annealing the samples are still appropriate for high quality epitaxial growth and subsequent lift-off."}],"publication":"Thin Solid Films","title":"Lift-off of mesoporous layers by electrochemical etching on Si (100) substrates with miscut of 6° off towards (111)","date_created":"2018-09-11T14:21:12Z","publisher":"Elsevier BV","year":"2011","issue":"1","article_type":"original","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"user_id":"49428","_id":"4379","status":"public","type":"journal_article","doi":"10.1016/j.tsf.2011.07.063","volume":520,"author":[{"last_name":"Garralaga Rojas","full_name":"Garralaga Rojas, E.","first_name":"E."},{"first_name":"B.","full_name":"Terheiden, B.","last_name":"Terheiden"},{"full_name":"Plagwitz, H.","last_name":"Plagwitz","first_name":"H."},{"first_name":"J.","last_name":"Hensen","full_name":"Hensen, J."},{"full_name":"Wiedemeier, V.","last_name":"Wiedemeier","first_name":"V."},{"last_name":"Berth","id":"53","full_name":"Berth, Gerhard","first_name":"Gerhard"},{"full_name":"Zrenner, Artur","id":"606","last_name":"Zrenner","orcid":"0000-0002-5190-0944","first_name":"Artur"},{"first_name":"R.","full_name":"Brendel, R.","last_name":"Brendel"}],"date_updated":"2022-01-06T07:01:00Z","intvolume":"       520","page":"606-609","citation":{"short":"E. Garralaga Rojas, B. Terheiden, H. Plagwitz, J. Hensen, V. Wiedemeier, G. Berth, A. Zrenner, R. 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(2011). Lift-off of mesoporous layers by electrochemical etching on Si (100) substrates with miscut of 6° off towards (111). <i>Thin Solid Films</i>, <i>520</i>(1), 606–609. <a href=\"https://doi.org/10.1016/j.tsf.2011.07.063\">https://doi.org/10.1016/j.tsf.2011.07.063</a>","chicago":"Garralaga Rojas, E., B. Terheiden, H. Plagwitz, J. Hensen, V. Wiedemeier, Gerhard Berth, Artur Zrenner, and R. Brendel. “Lift-off of Mesoporous Layers by Electrochemical Etching on Si (100) Substrates with Miscut of 6° off towards (111).” <i>Thin Solid Films</i> 520, no. 1 (2011): 606–9. <a href=\"https://doi.org/10.1016/j.tsf.2011.07.063\">https://doi.org/10.1016/j.tsf.2011.07.063</a>.","ieee":"E. Garralaga Rojas <i>et al.</i>, “Lift-off of mesoporous layers by electrochemical etching on Si (100) substrates with miscut of 6° off towards (111),” <i>Thin Solid Films</i>, vol. 520, no. 1, pp. 606–609, 2011.","ama":"Garralaga Rojas E, Terheiden B, Plagwitz H, et al. 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(2011). A Carpet Cloak for Visible Light. <i>Nano Letters</i>, <i>11</i>(7), 2825–2828. <a href=\"https://doi.org/10.1021/nl201189z\">https://doi.org/10.1021/nl201189z</a>","bibtex":"@article{Gharghi_Gladden_Zentgraf_Liu_Yin_Valentine_Zhang_2011, title={A Carpet Cloak for Visible Light}, volume={11}, DOI={<a href=\"https://doi.org/10.1021/nl201189z\">10.1021/nl201189z</a>}, number={7}, journal={Nano Letters}, publisher={American Chemical Society (ACS)}, author={Gharghi, Majid and Gladden, Christopher and Zentgraf, Thomas and Liu, Yongmin and Yin, Xiaobo and Valentine, Jason and Zhang, Xiang}, year={2011}, pages={2825–2828} }","short":"M. Gharghi, C. Gladden, T. Zentgraf, Y. Liu, X. Yin, J. Valentine, X. 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