[{"publisher":"Elsevier BV","date_created":"2019-02-21T14:39:07Z","status":"public","year":"2010","publication_identifier":{"issn":["1386-9477"]},"language":[{"iso":"eng"}],"_id":"7987","date_updated":"2022-01-06T07:03:48Z","author":[{"last_name":"Marquardt","first_name":"Bastian","full_name":"Marquardt, Bastian"},{"full_name":"Geller, Martin","first_name":"Martin","last_name":"Geller"},{"full_name":"Lorke, Axel","first_name":"Axel","last_name":"Lorke"},{"last_name":"Reuter","id":"37763","first_name":"Dirk","full_name":"Reuter, Dirk"},{"last_name":"Wieck","first_name":"Andreas D.","full_name":"Wieck, Andreas D."}],"intvolume":"        42","publication_status":"published","citation":{"short":"B. Marquardt, M. Geller, A. Lorke, D. Reuter, A.D. Wieck, Physica E: Low-Dimensional Systems and Nanostructures 42 (2010) 2598–2601.","bibtex":"@article{Marquardt_Geller_Lorke_Reuter_Wieck_2010, title={A two-dimensional electron gas as a sensitive detector to observe the charge carrier dynamics of self-assembled QDs}, volume={42}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2010.02.010\">10.1016/j.physe.2010.02.010</a>}, number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures}, publisher={Elsevier BV}, author={Marquardt, Bastian and Geller, Martin and Lorke, Axel and Reuter, Dirk and Wieck, Andreas D.}, year={2010}, pages={2598–2601} }","mla":"Marquardt, Bastian, et al. “A Two-Dimensional Electron Gas as a Sensitive Detector to Observe the Charge Carrier Dynamics of Self-Assembled QDs.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, vol. 42, no. 10, Elsevier BV, 2010, pp. 2598–601, doi:<a href=\"https://doi.org/10.1016/j.physe.2010.02.010\">10.1016/j.physe.2010.02.010</a>.","ieee":"B. Marquardt, M. Geller, A. Lorke, D. Reuter, and A. D. Wieck, “A two-dimensional electron gas as a sensitive detector to observe the charge carrier dynamics of self-assembled QDs,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, vol. 42, no. 10, pp. 2598–2601, 2010.","chicago":"Marquardt, Bastian, Martin Geller, Axel Lorke, Dirk Reuter, and Andreas D. Wieck. “A Two-Dimensional Electron Gas as a Sensitive Detector to Observe the Charge Carrier Dynamics of Self-Assembled QDs.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i> 42, no. 10 (2010): 2598–2601. <a href=\"https://doi.org/10.1016/j.physe.2010.02.010\">https://doi.org/10.1016/j.physe.2010.02.010</a>.","ama":"Marquardt B, Geller M, Lorke A, Reuter D, Wieck AD. A two-dimensional electron gas as a sensitive detector to observe the charge carrier dynamics of self-assembled QDs. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2010;42(10):2598-2601. doi:<a href=\"https://doi.org/10.1016/j.physe.2010.02.010\">10.1016/j.physe.2010.02.010</a>","apa":"Marquardt, B., Geller, M., Lorke, A., Reuter, D., &#38; Wieck, A. D. (2010). A two-dimensional electron gas as a sensitive detector to observe the charge carrier dynamics of self-assembled QDs. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, <i>42</i>(10), 2598–2601. <a href=\"https://doi.org/10.1016/j.physe.2010.02.010\">https://doi.org/10.1016/j.physe.2010.02.010</a>"},"department":[{"_id":"15"},{"_id":"230"}],"publication":"Physica E: Low-dimensional Systems and Nanostructures","type":"journal_article","volume":42,"page":"2598-2601","issue":"10","title":"A two-dimensional electron gas as a sensitive detector to observe the charge carrier dynamics of self-assembled QDs","doi":"10.1016/j.physe.2010.02.010","user_id":"42514"},{"publication_status":"published","user_id":"42514","citation":{"ama":"Lei W, Notthoff C, Peng J, et al. “Artificial Atoms” in Magnetic Fields: Wave-Function Shaping and Phase-Sensitive Tunneling. <i>Physical Review Letters</i>. 2010;105(17). doi:<a href=\"https://doi.org/10.1103/physrevlett.105.176804\">10.1103/physrevlett.105.176804</a>","apa":"Lei, W., Notthoff, C., Peng, J., Reuter, D., Wieck, A., Bester, G., &#38; Lorke, A. (2010). “Artificial Atoms” in Magnetic Fields: Wave-Function Shaping and Phase-Sensitive Tunneling. <i>Physical Review Letters</i>, <i>105</i>(17). <a href=\"https://doi.org/10.1103/physrevlett.105.176804\">https://doi.org/10.1103/physrevlett.105.176804</a>","chicago":"Lei, Wen, Christian Notthoff, Jie Peng, Dirk Reuter, Andreas Wieck, Gabriel Bester, and Axel Lorke. “‘Artificial Atoms’ in Magnetic Fields: Wave-Function Shaping and Phase-Sensitive Tunneling.” <i>Physical Review Letters</i> 105, no. 17 (2010). <a href=\"https://doi.org/10.1103/physrevlett.105.176804\">https://doi.org/10.1103/physrevlett.105.176804</a>.","ieee":"W. Lei <i>et al.</i>, “‘Artificial Atoms’ in Magnetic Fields: Wave-Function Shaping and Phase-Sensitive Tunneling,” <i>Physical Review Letters</i>, vol. 105, no. 17, 2010.","mla":"Lei, Wen, et al. “‘Artificial Atoms’ in Magnetic Fields: Wave-Function Shaping and Phase-Sensitive Tunneling.” <i>Physical Review Letters</i>, vol. 105, no. 17, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevlett.105.176804\">10.1103/physrevlett.105.176804</a>.","bibtex":"@article{Lei_Notthoff_Peng_Reuter_Wieck_Bester_Lorke_2010, title={“Artificial Atoms” in Magnetic Fields: Wave-Function Shaping and Phase-Sensitive Tunneling}, volume={105}, DOI={<a href=\"https://doi.org/10.1103/physrevlett.105.176804\">10.1103/physrevlett.105.176804</a>}, number={17}, journal={Physical Review Letters}, publisher={American Physical Society (APS)}, author={Lei, Wen and Notthoff, Christian and Peng, Jie and Reuter, Dirk and Wieck, Andreas and Bester, Gabriel and Lorke, Axel}, year={2010} }","short":"W. Lei, C. Notthoff, J. Peng, D. Reuter, A. Wieck, G. Bester, A. Lorke, Physical Review Letters 105 (2010)."},"department":[{"_id":"15"},{"_id":"230"}],"author":[{"first_name":"Wen","full_name":"Lei, Wen","last_name":"Lei"},{"first_name":"Christian","full_name":"Notthoff, Christian","last_name":"Notthoff"},{"last_name":"Peng","first_name":"Jie","full_name":"Peng, Jie"},{"full_name":"Reuter, Dirk","first_name":"Dirk","id":"37763","last_name":"Reuter"},{"last_name":"Wieck","full_name":"Wieck, Andreas","first_name":"Andreas"},{"full_name":"Bester, Gabriel","first_name":"Gabriel","last_name":"Bester"},{"last_name":"Lorke","full_name":"Lorke, Axel","first_name":"Axel"}],"title":"“Artificial Atoms” in Magnetic Fields: Wave-Function Shaping and Phase-Sensitive Tunneling","doi":"10.1103/physrevlett.105.176804","intvolume":"       105","volume":105,"_id":"7988","issue":"17","date_updated":"2022-01-06T07:03:48Z","publisher":"American Physical Society (APS)","date_created":"2019-02-21T14:39:56Z","publication":"Physical Review Letters","status":"public","language":[{"iso":"eng"}],"publication_identifier":{"issn":["0031-9007","1079-7114"]},"type":"journal_article","year":"2010"},{"issue":"16","date_updated":"2022-01-06T07:03:48Z","volume":82,"_id":"7989","status":"public","language":[{"iso":"eng"}],"type":"journal_article","publication_identifier":{"issn":["1098-0121","1550-235X"]},"year":"2010","publisher":"American Physical Society (APS)","date_created":"2019-02-21T14:40:35Z","publication":"Physical Review B","department":[{"_id":"15"},{"_id":"230"}],"publication_status":"published","user_id":"42514","citation":{"mla":"Kreisbeck, Christoph, et al. “Phase Shifts and Phaseπjumps in Four-Terminal Waveguide Aharonov-Bohm Interferometers.” <i>Physical Review B</i>, vol. 82, no. 16, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.82.165329\">10.1103/physrevb.82.165329</a>.","bibtex":"@article{Kreisbeck_Kramer_Buchholz_Fischer_Kunze_Reuter_Wieck_2010, title={Phase shifts and phaseπjumps in four-terminal waveguide Aharonov-Bohm interferometers}, volume={82}, DOI={<a href=\"https://doi.org/10.1103/physrevb.82.165329\">10.1103/physrevb.82.165329</a>}, number={16}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Kreisbeck, Christoph and Kramer, Tobias and Buchholz, Sven S. and Fischer, Saskia F. and Kunze, Ulrich and Reuter, Dirk and Wieck, Andreas D.}, year={2010} }","short":"C. Kreisbeck, T. Kramer, S.S. Buchholz, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Physical Review B 82 (2010).","ama":"Kreisbeck C, Kramer T, Buchholz SS, et al. Phase shifts and phaseπjumps in four-terminal waveguide Aharonov-Bohm interferometers. <i>Physical Review B</i>. 2010;82(16). doi:<a href=\"https://doi.org/10.1103/physrevb.82.165329\">10.1103/physrevb.82.165329</a>","apa":"Kreisbeck, C., Kramer, T., Buchholz, S. S., Fischer, S. F., Kunze, U., Reuter, D., &#38; Wieck, A. D. (2010). Phase shifts and phaseπjumps in four-terminal waveguide Aharonov-Bohm interferometers. <i>Physical Review B</i>, <i>82</i>(16). <a href=\"https://doi.org/10.1103/physrevb.82.165329\">https://doi.org/10.1103/physrevb.82.165329</a>","chicago":"Kreisbeck, Christoph, Tobias Kramer, Sven S. Buchholz, Saskia F. Fischer, Ulrich Kunze, Dirk Reuter, and Andreas D. Wieck. “Phase Shifts and Phaseπjumps in Four-Terminal Waveguide Aharonov-Bohm Interferometers.” <i>Physical Review B</i> 82, no. 16 (2010). <a href=\"https://doi.org/10.1103/physrevb.82.165329\">https://doi.org/10.1103/physrevb.82.165329</a>.","ieee":"C. Kreisbeck <i>et al.</i>, “Phase shifts and phaseπjumps in four-terminal waveguide Aharonov-Bohm interferometers,” <i>Physical Review B</i>, vol. 82, no. 16, 2010."},"intvolume":"        82","doi":"10.1103/physrevb.82.165329","author":[{"full_name":"Kreisbeck, Christoph","first_name":"Christoph","last_name":"Kreisbeck"},{"last_name":"Kramer","full_name":"Kramer, Tobias","first_name":"Tobias"},{"full_name":"Buchholz, Sven S.","first_name":"Sven S.","last_name":"Buchholz"},{"last_name":"Fischer","full_name":"Fischer, Saskia F.","first_name":"Saskia F."},{"last_name":"Kunze","first_name":"Ulrich","full_name":"Kunze, Ulrich"},{"last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk"},{"first_name":"Andreas D.","full_name":"Wieck, Andreas D.","last_name":"Wieck"}],"title":"Phase shifts and phaseπjumps in four-terminal waveguide Aharonov-Bohm interferometers"},{"publication":"Applied Physics Letters","date_created":"2019-02-21T14:41:19Z","publisher":"AIP Publishing","type":"journal_article","publication_identifier":{"issn":["0003-6951","1077-3118"]},"year":"2010","language":[{"iso":"eng"}],"status":"public","_id":"7990","volume":97,"article_number":"143101","date_updated":"2022-01-06T07:03:48Z","issue":"14","title":"An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode","author":[{"last_name":"Mehta","full_name":"Mehta, M.","first_name":"M."},{"first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763"},{"full_name":"Wieck, A. D.","first_name":"A. D.","last_name":"Wieck"},{"full_name":"Michaelis de Vasconcellos, S.","first_name":"S.","last_name":"Michaelis de Vasconcellos"},{"first_name":"A.","full_name":"Zrenner, A.","last_name":"Zrenner"},{"first_name":"C.","full_name":"Meier, C.","last_name":"Meier"}],"doi":"10.1063/1.3488812","intvolume":"        97","citation":{"short":"M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, C. Meier, Applied Physics Letters 97 (2010).","bibtex":"@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010, title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}, volume={97}, DOI={<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>}, number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, A. and Meier, C.}, year={2010} }","mla":"Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” <i>Applied Physics Letters</i>, vol. 97, no. 14, 143101, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>.","ieee":"M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode,” <i>Applied Physics Letters</i>, vol. 97, no. 14, 2010.","chicago":"Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” <i>Applied Physics Letters</i> 97, no. 14 (2010). <a href=\"https://doi.org/10.1063/1.3488812\">https://doi.org/10.1063/1.3488812</a>.","apa":"Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner, A., &#38; Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. <i>Applied Physics Letters</i>, <i>97</i>(14). <a href=\"https://doi.org/10.1063/1.3488812\">https://doi.org/10.1063/1.3488812</a>","ama":"Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. <i>Applied Physics Letters</i>. 2010;97(14). doi:<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>"},"user_id":"42514","publication_status":"published","department":[{"_id":"15"},{"_id":"230"}]},{"citation":{"mla":"Reuter, Dirk, et al. “Capacitance-Voltage Spectroscopy on InAs Quantum Dot Valence Band States in Tilted Magnetic Fields.” <i>Journal of Physics: Conference Series</i>, vol. 245, 012043, IOP Publishing, 2010, doi:<a href=\"https://doi.org/10.1088/1742-6596/245/1/012043\">10.1088/1742-6596/245/1/012043</a>.","bibtex":"@article{Reuter_Roescu_Zeitler_Maan_Wieck_2010, title={Capacitance-voltage spectroscopy on InAs quantum dot valence band states in tilted magnetic fields}, volume={245}, DOI={<a href=\"https://doi.org/10.1088/1742-6596/245/1/012043\">10.1088/1742-6596/245/1/012043</a>}, number={012043}, journal={Journal of Physics: Conference Series}, publisher={IOP Publishing}, author={Reuter, Dirk and Roescu, R and Zeitler, U and Maan, J C and Wieck, A D}, year={2010} }","short":"D. Reuter, R. Roescu, U. Zeitler, J.C. Maan, A.D. Wieck, Journal of Physics: Conference Series 245 (2010).","ama":"Reuter D, Roescu R, Zeitler U, Maan JC, Wieck AD. Capacitance-voltage spectroscopy on InAs quantum dot valence band states in tilted magnetic fields. <i>Journal of Physics: Conference Series</i>. 2010;245. doi:<a href=\"https://doi.org/10.1088/1742-6596/245/1/012043\">10.1088/1742-6596/245/1/012043</a>","apa":"Reuter, D., Roescu, R., Zeitler, U., Maan, J. C., &#38; Wieck, A. D. (2010). Capacitance-voltage spectroscopy on InAs quantum dot valence band states in tilted magnetic fields. <i>Journal of Physics: Conference Series</i>, <i>245</i>. <a href=\"https://doi.org/10.1088/1742-6596/245/1/012043\">https://doi.org/10.1088/1742-6596/245/1/012043</a>","chicago":"Reuter, Dirk, R Roescu, U Zeitler, J C Maan, and A D Wieck. “Capacitance-Voltage Spectroscopy on InAs Quantum Dot Valence Band States in Tilted Magnetic Fields.” <i>Journal of Physics: Conference Series</i> 245 (2010). <a href=\"https://doi.org/10.1088/1742-6596/245/1/012043\">https://doi.org/10.1088/1742-6596/245/1/012043</a>.","ieee":"D. Reuter, R. Roescu, U. Zeitler, J. C. Maan, and A. D. Wieck, “Capacitance-voltage spectroscopy on InAs quantum dot valence band states in tilted magnetic fields,” <i>Journal of Physics: Conference Series</i>, vol. 245, 2010."},"publication_status":"published","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"title":"Capacitance-voltage spectroscopy on InAs quantum dot valence band states in tilted magnetic fields","author":[{"full_name":"Reuter, Dirk","first_name":"Dirk","id":"37763","last_name":"Reuter"},{"first_name":"R","full_name":"Roescu, R","last_name":"Roescu"},{"full_name":"Zeitler, U","first_name":"U","last_name":"Zeitler"},{"full_name":"Maan, J C","first_name":"J C","last_name":"Maan"},{"last_name":"Wieck","full_name":"Wieck, A D","first_name":"A D"}],"doi":"10.1088/1742-6596/245/1/012043","intvolume":"       245","_id":"7991","volume":245,"article_number":"012043","date_updated":"2022-01-06T07:03:48Z","date_created":"2019-02-21T14:42:01Z","publication":"Journal of Physics: Conference Series","publisher":"IOP Publishing","language":[{"iso":"eng"}],"year":"2010","publication_identifier":{"issn":["1742-6596"]},"type":"journal_article","status":"public"},{"department":[{"_id":"15"},{"_id":"230"}],"publication_status":"published","user_id":"42514","citation":{"ieee":"P. J. Rizo <i>et al.</i>, “Optical probing of spin dynamics of two-dimensional and bulk electrons in a GaAs/AlGaAs heterojunction system,” <i>New Journal of Physics</i>, vol. 12, no. 11, 2010.","chicago":"Rizo, P J, A Pugzlys, A Slachter, S Z Denega, Dirk Reuter, A D Wieck, P H M van Loosdrecht, and C H van der Wal. “Optical Probing of Spin Dynamics of Two-Dimensional and Bulk Electrons in a GaAs/AlGaAs Heterojunction System.” <i>New Journal of Physics</i> 12, no. 11 (2010). <a href=\"https://doi.org/10.1088/1367-2630/12/11/113040\">https://doi.org/10.1088/1367-2630/12/11/113040</a>.","ama":"Rizo PJ, Pugzlys A, Slachter A, et al. Optical probing of spin dynamics of two-dimensional and bulk electrons in a GaAs/AlGaAs heterojunction system. <i>New Journal of Physics</i>. 2010;12(11). doi:<a href=\"https://doi.org/10.1088/1367-2630/12/11/113040\">10.1088/1367-2630/12/11/113040</a>","apa":"Rizo, P. J., Pugzlys, A., Slachter, A., Denega, S. Z., Reuter, D., Wieck, A. D., … van der Wal, C. H. (2010). Optical probing of spin dynamics of two-dimensional and bulk electrons in a GaAs/AlGaAs heterojunction system. <i>New Journal of Physics</i>, <i>12</i>(11). <a href=\"https://doi.org/10.1088/1367-2630/12/11/113040\">https://doi.org/10.1088/1367-2630/12/11/113040</a>","short":"P.J. Rizo, A. Pugzlys, A. Slachter, S.Z. Denega, D. Reuter, A.D. Wieck, P.H.M. van Loosdrecht, C.H. van der Wal, New Journal of Physics 12 (2010).","bibtex":"@article{Rizo_Pugzlys_Slachter_Denega_Reuter_Wieck_van Loosdrecht_van der Wal_2010, title={Optical probing of spin dynamics of two-dimensional and bulk electrons in a GaAs/AlGaAs heterojunction system}, volume={12}, DOI={<a href=\"https://doi.org/10.1088/1367-2630/12/11/113040\">10.1088/1367-2630/12/11/113040</a>}, number={11113040}, journal={New Journal of Physics}, publisher={IOP Publishing}, author={Rizo, P J and Pugzlys, A and Slachter, A and Denega, S Z and Reuter, Dirk and Wieck, A D and van Loosdrecht, P H M and van der Wal, C H}, year={2010} }","mla":"Rizo, P. J., et al. “Optical Probing of Spin Dynamics of Two-Dimensional and Bulk Electrons in a GaAs/AlGaAs Heterojunction System.” <i>New Journal of Physics</i>, vol. 12, no. 11, 113040, IOP Publishing, 2010, doi:<a href=\"https://doi.org/10.1088/1367-2630/12/11/113040\">10.1088/1367-2630/12/11/113040</a>."},"intvolume":"        12","doi":"10.1088/1367-2630/12/11/113040","author":[{"first_name":"P J","full_name":"Rizo, P J","last_name":"Rizo"},{"last_name":"Pugzlys","full_name":"Pugzlys, A","first_name":"A"},{"first_name":"A","full_name":"Slachter, A","last_name":"Slachter"},{"first_name":"S Z","full_name":"Denega, S Z","last_name":"Denega"},{"last_name":"Reuter","id":"37763","first_name":"Dirk","full_name":"Reuter, Dirk"},{"first_name":"A D","full_name":"Wieck, A D","last_name":"Wieck"},{"first_name":"P H M","full_name":"van Loosdrecht, P H M","last_name":"van Loosdrecht"},{"last_name":"van der Wal","first_name":"C H","full_name":"van der Wal, C H"}],"title":"Optical probing of spin dynamics of two-dimensional and bulk electrons in a GaAs/AlGaAs heterojunction system","issue":"11","date_updated":"2022-01-06T07:03:48Z","article_number":"113040","volume":12,"_id":"7992","status":"public","language":[{"iso":"eng"}],"type":"journal_article","publication_identifier":{"issn":["1367-2630"]},"year":"2010","publisher":"IOP Publishing","date_created":"2019-02-21T14:42:45Z","publication":"New Journal of Physics"},{"keyword":["Copper Oxygen Fluorescence quenching N donor ligands"],"user_id":"49428","title":"Oxygen sensing by fluorescence quenching of [Cu(btmgp)I]","doi":"10.1016/j.jlumin.2010.05.012","abstract":[{"text":"A fluorescence study of acetonitrile solutions of bis(tetramethylguanidine)propane, copper(I)-iodide and [Cu(btmgp)I] was performed and the chemical reaction of the latter species with O2 was investigated at room temperature. The actual quenching process via O2 gassing was studied and an exponential dependence of the fluorescence intensity with respect to the complex concentration was observed.\r\nFurthermore the survey was deepened on time resolved fluorescence properties of solved [Cu(btmgp)I] in a wider concentration range. The applicability of this complex for O2 sensing inside a microreactor system was proven by confocal fluorescence measurements. It was shown that the investigated system can be used for oxygen sensing in the copper concentration range from 10−2 to 10−9 mol/l.","lang":"eng"}],"page":"1958-1962","volume":130,"issue":"10","publication":"Journal of Luminescence","type":"journal_article","citation":{"ama":"Herres-Pawlis S, Berth G, Wiedemeier V, Schmidt L, Zrenner A, Warnecke H-J. Oxygen sensing by fluorescence quenching of [Cu(btmgp)I]. <i>Journal of Luminescence</i>. 2010;130(10):1958-1962. doi:<a href=\"https://doi.org/10.1016/j.jlumin.2010.05.012\">10.1016/j.jlumin.2010.05.012</a>","apa":"Herres-Pawlis, S., Berth, G., Wiedemeier, V., Schmidt, L., Zrenner, A., &#38; Warnecke, H.-J. (2010). Oxygen sensing by fluorescence quenching of [Cu(btmgp)I]. <i>Journal of Luminescence</i>, <i>130</i>(10), 1958–1962. <a href=\"https://doi.org/10.1016/j.jlumin.2010.05.012\">https://doi.org/10.1016/j.jlumin.2010.05.012</a>","ieee":"S. Herres-Pawlis, G. Berth, V. Wiedemeier, L. Schmidt, A. Zrenner, and H.-J. Warnecke, “Oxygen sensing by fluorescence quenching of [Cu(btmgp)I],” <i>Journal of Luminescence</i>, vol. 130, no. 10, pp. 1958–1962, 2010.","chicago":"Herres-Pawlis, Sonja, Gerhard Berth, Volker Wiedemeier, Ludger Schmidt, Artur Zrenner, and Hans-Joachim Warnecke. “Oxygen Sensing by Fluorescence Quenching of [Cu(Btmgp)I].” <i>Journal of Luminescence</i> 130, no. 10 (2010): 1958–62. <a href=\"https://doi.org/10.1016/j.jlumin.2010.05.012\">https://doi.org/10.1016/j.jlumin.2010.05.012</a>.","bibtex":"@article{Herres-Pawlis_Berth_Wiedemeier_Schmidt_Zrenner_Warnecke_2010, title={Oxygen sensing by fluorescence quenching of [Cu(btmgp)I]}, volume={130}, DOI={<a href=\"https://doi.org/10.1016/j.jlumin.2010.05.012\">10.1016/j.jlumin.2010.05.012</a>}, number={10}, journal={Journal of Luminescence}, publisher={Elsevier BV}, author={Herres-Pawlis, Sonja and Berth, Gerhard and Wiedemeier, Volker and Schmidt, Ludger and Zrenner, Artur and Warnecke, Hans-Joachim}, year={2010}, pages={1958–1962} }","mla":"Herres-Pawlis, Sonja, et al. “Oxygen Sensing by Fluorescence Quenching of [Cu(Btmgp)I].” <i>Journal of Luminescence</i>, vol. 130, no. 10, Elsevier BV, 2010, pp. 1958–62, doi:<a href=\"https://doi.org/10.1016/j.jlumin.2010.05.012\">10.1016/j.jlumin.2010.05.012</a>.","short":"S. Herres-Pawlis, G. Berth, V. Wiedemeier, L. Schmidt, A. Zrenner, H.-J. Warnecke, Journal of Luminescence 130 (2010) 1958–1962."},"publication_status":"published","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"article_type":"original","author":[{"last_name":"Herres-Pawlis","first_name":"Sonja","full_name":"Herres-Pawlis, Sonja"},{"first_name":"Gerhard","full_name":"Berth, Gerhard","last_name":"Berth","id":"53"},{"last_name":"Wiedemeier","full_name":"Wiedemeier, Volker","first_name":"Volker"},{"last_name":"Schmidt","first_name":"Ludger","full_name":"Schmidt, Ludger"},{"orcid":"0000-0002-5190-0944","last_name":"Zrenner","id":"606","full_name":"Zrenner, Artur","first_name":"Artur"},{"last_name":"Warnecke","full_name":"Warnecke, Hans-Joachim","first_name":"Hans-Joachim"}],"intvolume":"       130","_id":"4548","date_updated":"2022-01-06T07:01:09Z","date_created":"2018-09-20T12:31:16Z","publisher":"Elsevier BV","language":[{"iso":"eng"}],"publication_identifier":{"issn":["0022-2313"]},"year":"2010","status":"public"},{"citation":{"mla":"Larramendi, E. M., et al. “Intensity Enhancement of Te Raman Modes by Laser Damage in ZnTe Epilayers.” <i>Semiconductor Science and Technology</i>, vol. 25, no. 7, 075003, IOP Publishing, 2010, doi:<a href=\"https://doi.org/10.1088/0268-1242/25/7/075003\">10.1088/0268-1242/25/7/075003</a>.","bibtex":"@article{Larramendi_Berth_Wiedemeier_Hüsch_Zrenner_Woggon_Tschumak_Lischka_Schikora_2010, title={Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers}, volume={25}, DOI={<a href=\"https://doi.org/10.1088/0268-1242/25/7/075003\">10.1088/0268-1242/25/7/075003</a>}, number={7075003}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Larramendi, E M and Berth, Gerhard and Wiedemeier, V and Hüsch, K-P and Zrenner, Artur and Woggon, U and Tschumak, E and Lischka, K and Schikora, D}, year={2010} }","short":"E.M. Larramendi, G. Berth, V. Wiedemeier, K.-P. Hüsch, A. Zrenner, U. Woggon, E. Tschumak, K. Lischka, D. Schikora, Semiconductor Science and Technology 25 (2010).","apa":"Larramendi, E. M., Berth, G., Wiedemeier, V., Hüsch, K.-P., Zrenner, A., Woggon, U., … Schikora, D. (2010). Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers. <i>Semiconductor Science and Technology</i>, <i>25</i>(7). <a href=\"https://doi.org/10.1088/0268-1242/25/7/075003\">https://doi.org/10.1088/0268-1242/25/7/075003</a>","ama":"Larramendi EM, Berth G, Wiedemeier V, et al. Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers. <i>Semiconductor Science and Technology</i>. 2010;25(7). doi:<a href=\"https://doi.org/10.1088/0268-1242/25/7/075003\">10.1088/0268-1242/25/7/075003</a>","chicago":"Larramendi, E M, Gerhard Berth, V Wiedemeier, K-P Hüsch, Artur Zrenner, U Woggon, E Tschumak, K Lischka, and D Schikora. “Intensity Enhancement of Te Raman Modes by Laser Damage in ZnTe Epilayers.” <i>Semiconductor Science and Technology</i> 25, no. 7 (2010). <a href=\"https://doi.org/10.1088/0268-1242/25/7/075003\">https://doi.org/10.1088/0268-1242/25/7/075003</a>.","ieee":"E. M. Larramendi <i>et al.</i>, “Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers,” <i>Semiconductor Science and Technology</i>, vol. 25, no. 7, 2010."},"user_id":"49428","publication_status":"published","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"title":"Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers","article_type":"original","author":[{"first_name":"E M","full_name":"Larramendi, E M","last_name":"Larramendi"},{"full_name":"Berth, Gerhard","first_name":"Gerhard","last_name":"Berth","id":"53"},{"full_name":"Wiedemeier, V","first_name":"V","last_name":"Wiedemeier"},{"first_name":"K-P","full_name":"Hüsch, K-P","last_name":"Hüsch"},{"orcid":"0000-0002-5190-0944","id":"606","last_name":"Zrenner","full_name":"Zrenner, Artur","first_name":"Artur"},{"full_name":"Woggon, U","first_name":"U","last_name":"Woggon"},{"first_name":"E","full_name":"Tschumak, E","last_name":"Tschumak"},{"first_name":"K","full_name":"Lischka, K","last_name":"Lischka"},{"first_name":"D","full_name":"Schikora, D","last_name":"Schikora"}],"abstract":[{"lang":"eng","text":"Damage caused by laser irradiation on the surface of ZnTe epilayers was studied by micro-Raman and atomic force microscopy (AFM). ZnTe LO-phonon overtones up to four order and TO + (n − 1)LO zone-center phonons were observed in the resonant micro-Raman spectra at room temperature. Discrepancies in the literature regarding the origin of two features observed at low frequencies around 120 and 140 cm−1 in the Raman spectrum of ZnTe are discussed and resolved. These Raman peaks were not detected by using a low excitation laser power density on a Zn-terminated ZnTe surface; however, with the increase of the laser power density they were found to arise irreversibly. The correspondence of these peaks in a wave number with the strongest Raman peaks of the crystalline tellurium phase and the intensity enhancement behavior with the laser power in a similar way as for CdTe strongly suggests the formation of crystalline tellurium aggregates on the layer surface due to laser irradiation damage. AFM data reveal the occurrence of laser ablation on the ZnTe surface even though the surface temperature of the sample is below the melting point."}],"intvolume":"        25","doi":"10.1088/0268-1242/25/7/075003","_id":"4549","volume":25,"article_number":"075003","date_updated":"2022-01-06T07:01:09Z","issue":"7","publication":"Semiconductor Science and Technology","date_created":"2018-09-20T12:35:35Z","publisher":"IOP Publishing","publication_identifier":{"issn":["0268-1242","1361-6641"]},"type":"journal_article","year":"2010","language":[{"iso":"eng"}],"status":"public"},{"_id":"4550","date_updated":"2022-01-06T07:01:09Z","date_created":"2018-09-20T12:38:51Z","publisher":"AIP Publishing","language":[{"iso":"eng"}],"year":"2010","publication_identifier":{"issn":["0003-6951","1077-3118"]},"status":"public","citation":{"ieee":"M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode,” <i>Applied Physics Letters</i>, vol. 97, no. 14, 2010.","chicago":"Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, Artur Zrenner, and Cedrik Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” <i>Applied Physics Letters</i> 97, no. 14 (2010). <a href=\"https://doi.org/10.1063/1.3488812\">https://doi.org/10.1063/1.3488812</a>.","ama":"Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. <i>Applied Physics Letters</i>. 2010;97(14). doi:<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>","apa":"Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner, A., &#38; Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. <i>Applied Physics Letters</i>, <i>97</i>(14). <a href=\"https://doi.org/10.1063/1.3488812\">https://doi.org/10.1063/1.3488812</a>","short":"M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, C. Meier, Applied Physics Letters 97 (2010).","bibtex":"@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010, title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}, volume={97}, DOI={<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>}, number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, Artur and Meier, Cedrik}, year={2010} }","mla":"Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” <i>Applied Physics Letters</i>, vol. 97, no. 14, 143101, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>."},"publication_status":"published","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"287"}],"article_type":"original","author":[{"last_name":"Mehta","first_name":"M.","full_name":"Mehta, M."},{"id":"37763","last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk"},{"first_name":"A. D.","full_name":"Wieck, A. D.","last_name":"Wieck"},{"full_name":"Michaelis de Vasconcellos, S.","first_name":"S.","last_name":"Michaelis de Vasconcellos"},{"orcid":"0000-0002-5190-0944","full_name":"Zrenner, Artur","first_name":"Artur","last_name":"Zrenner","id":"606"},{"orcid":"https://orcid.org/0000-0002-3787-3572","first_name":"Cedrik","full_name":"Meier, Cedrik","last_name":"Meier","id":"20798"}],"intvolume":"        97","volume":97,"article_number":"143101","issue":"14","publication":"Applied Physics Letters","type":"journal_article","user_id":"20798","title":"An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode","abstract":[{"text":"We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski–Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices.","lang":"eng"}],"doi":"10.1063/1.3488812"},{"citation":{"mla":"Mehta, Minisha, et al. “Intentionally Positioned Self-Assembled InAs Quantum Dots in an Electroluminescent p–i–n Junction Diode.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, vol. 42, no. 10, Elsevier BV, 2010, pp. 2749–52, doi:<a href=\"https://doi.org/10.1016/j.physe.2009.12.053\">10.1016/j.physe.2009.12.053</a>.","bibtex":"@article{Mehta_Reuter_Melnikov_Wieck_Michaelis de Vasconcellos_Baumgarten_Zrenner_Meier_2010, title={Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode}, volume={42}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2009.12.053\">10.1016/j.physe.2009.12.053</a>}, number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures}, publisher={Elsevier BV}, author={Mehta, Minisha and Reuter, Dirk and Melnikov, Alexander and Wieck, Andreas D. and Michaelis de Vasconcellos, Steffen and Baumgarten, Tim and Zrenner, Artur and Meier, Cedrik}, year={2010}, pages={2749–2752} }","short":"M. Mehta, D. Reuter, A. Melnikov, A.D. Wieck, S. Michaelis de Vasconcellos, T. Baumgarten, A. Zrenner, C. Meier, Physica E: Low-Dimensional Systems and Nanostructures 42 (2010) 2749–2752.","ama":"Mehta M, Reuter D, Melnikov A, et al. Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2010;42(10):2749-2752. doi:<a href=\"https://doi.org/10.1016/j.physe.2009.12.053\">10.1016/j.physe.2009.12.053</a>","apa":"Mehta, M., Reuter, D., Melnikov, A., Wieck, A. D., Michaelis de Vasconcellos, S., Baumgarten, T., … Meier, C. (2010). Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, <i>42</i>(10), 2749–2752. <a href=\"https://doi.org/10.1016/j.physe.2009.12.053\">https://doi.org/10.1016/j.physe.2009.12.053</a>","chicago":"Mehta, Minisha, Dirk Reuter, Alexander Melnikov, Andreas D. Wieck, Steffen Michaelis de Vasconcellos, Tim Baumgarten, Artur Zrenner, and Cedrik Meier. “Intentionally Positioned Self-Assembled InAs Quantum Dots in an Electroluminescent p–i–n Junction Diode.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i> 42, no. 10 (2010): 2749–52. <a href=\"https://doi.org/10.1016/j.physe.2009.12.053\">https://doi.org/10.1016/j.physe.2009.12.053</a>.","ieee":"M. Mehta <i>et al.</i>, “Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, vol. 42, no. 10, pp. 2749–2752, 2010."},"publication_status":"published","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"287"}],"article_type":"original","author":[{"last_name":"Mehta","first_name":"Minisha","full_name":"Mehta, Minisha"},{"id":"37763","last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk"},{"full_name":"Melnikov, Alexander","first_name":"Alexander","last_name":"Melnikov"},{"last_name":"Wieck","full_name":"Wieck, Andreas D.","first_name":"Andreas D."},{"last_name":"Michaelis de Vasconcellos","first_name":"Steffen","full_name":"Michaelis de Vasconcellos, Steffen"},{"last_name":"Baumgarten","full_name":"Baumgarten, Tim","first_name":"Tim"},{"orcid":"0000-0002-5190-0944","first_name":"Artur","full_name":"Zrenner, Artur","id":"606","last_name":"Zrenner"},{"full_name":"Meier, Cedrik","first_name":"Cedrik","id":"20798","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572"}],"intvolume":"        42","_id":"4551","date_updated":"2022-01-06T07:01:09Z","date_created":"2018-09-20T12:42:40Z","publisher":"Elsevier BV","year":"2010","publication_identifier":{"issn":["1386-9477"]},"language":[{"iso":"eng"}],"status":"public","user_id":"20798","keyword":["Molecular beam epitaxy","Focused ion beam","Self-assembled quantum dot","Electroluminescence"],"title":"Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode","doi":"10.1016/j.physe.2009.12.053","abstract":[{"lang":"eng","text":"An intentional positioning of optically active quantum dots using site-selective growth by a combination of molecular beam epitaxy (MBE) and focused ion beam (FIB) implantation in an all-ultra-high-vacuum (UHV) setup has been successfully demonstrated. A square array of periodic holes on GaAs substrate was fabricated with FIB of 30 keV ions followed by an in situ annealing step. Subsequently, the patterned holes were overgrown with an optimized amount of InAs in order to achieve site-selective growth of the QDs on the patterned holes. Under well-optimized conditions, a selectivity of single quantum dot growth in the patterned holes of 52% was achieved. Thereafter, carrier injection and subsequent radiative recombination from the positioned InAs/GaAs self-assembled QDs was investigated by embedding the QDs in the intrinsic part of a GaAs-based p–i–n junction device. Electroluminescence spectra taken at 77 K show interband transitions up to the fifth excited state from the QDs."}],"page":"2749-2752","volume":42,"issue":"10","publication":"Physica E: Low-dimensional Systems and Nanostructures","type":"journal_article"},{"department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"publication_status":"published","citation":{"ieee":"M. Panfilova, S. Michaelis de Vasconcellos, A. Pawlis, K. Lischka, and A. Zrenner, “Resonant photocurrent-spectroscopy of individual CdSe quantum dots,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, vol. 42, no. 10, pp. 2521–2523, 2010.","chicago":"Panfilova, M., S. Michaelis de Vasconcellos, A. Pawlis, K. Lischka, and Artur Zrenner. “Resonant Photocurrent-Spectroscopy of Individual CdSe Quantum Dots.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i> 42, no. 10 (2010): 2521–23. <a href=\"https://doi.org/10.1016/j.physe.2010.01.013\">https://doi.org/10.1016/j.physe.2010.01.013</a>.","ama":"Panfilova M, Michaelis de Vasconcellos S, Pawlis A, Lischka K, Zrenner A. Resonant photocurrent-spectroscopy of individual CdSe quantum dots. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2010;42(10):2521-2523. doi:<a href=\"https://doi.org/10.1016/j.physe.2010.01.013\">10.1016/j.physe.2010.01.013</a>","apa":"Panfilova, M., Michaelis de Vasconcellos, S., Pawlis, A., Lischka, K., &#38; Zrenner, A. (2010). Resonant photocurrent-spectroscopy of individual CdSe quantum dots. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, <i>42</i>(10), 2521–2523. <a href=\"https://doi.org/10.1016/j.physe.2010.01.013\">https://doi.org/10.1016/j.physe.2010.01.013</a>","short":"M. Panfilova, S. Michaelis de Vasconcellos, A. Pawlis, K. Lischka, A. Zrenner, Physica E: Low-Dimensional Systems and Nanostructures 42 (2010) 2521–2523.","bibtex":"@article{Panfilova_Michaelis de Vasconcellos_Pawlis_Lischka_Zrenner_2010, title={Resonant photocurrent-spectroscopy of individual CdSe quantum dots}, volume={42}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2010.01.013\">10.1016/j.physe.2010.01.013</a>}, number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures}, publisher={Elsevier BV}, author={Panfilova, M. and Michaelis de Vasconcellos, S. and Pawlis, A. and Lischka, K. and Zrenner, Artur}, year={2010}, pages={2521–2523} }","mla":"Panfilova, M., et al. “Resonant Photocurrent-Spectroscopy of Individual CdSe Quantum Dots.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, vol. 42, no. 10, Elsevier BV, 2010, pp. 2521–23, doi:<a href=\"https://doi.org/10.1016/j.physe.2010.01.013\">10.1016/j.physe.2010.01.013</a>."},"intvolume":"        42","author":[{"full_name":"Panfilova, M.","first_name":"M.","last_name":"Panfilova"},{"first_name":"S.","full_name":"Michaelis de Vasconcellos, S.","last_name":"Michaelis de Vasconcellos"},{"last_name":"Pawlis","full_name":"Pawlis, A.","first_name":"A."},{"full_name":"Lischka, K.","first_name":"K.","last_name":"Lischka"},{"first_name":"Artur","full_name":"Zrenner, Artur","last_name":"Zrenner","id":"606","orcid":"0000-0002-5190-0944"}],"article_type":"original","date_updated":"2022-01-06T07:01:09Z","_id":"4552","status":"public","language":[{"iso":"eng"}],"publication_identifier":{"issn":["1386-9477"]},"year":"2010","publisher":"Elsevier BV","date_created":"2018-09-20T12:45:46Z","keyword":["CdSe/ZnSe quantum dots","Photodiode","Quantum confined Stark Effect","Photocurrent","II–VI Semiconductors"],"user_id":"49428","abstract":[{"text":"Here we report on investigations on CdSe quantum dots incorporated in ZnSe based Schottky photodiodes with near-field shadow masks. Photoluminescence and photocurrent of individual quantum dots were studied as a function of the applied bias voltage. The exciton energy of the quantum dot ground state transition was shifted to the excitation energy by using the Stark effect tuning via an external bias voltage. Under the condition of resonance with the laser excitation energy we observed a resonant photocurrent signal due to the tunnelling of carriers out of the quantum dots at electric fields above 500 kV/cm.","lang":"eng"}],"doi":"10.1016/j.physe.2010.01.013","title":"Resonant photocurrent-spectroscopy of individual CdSe quantum dots","issue":"10","volume":42,"page":"2521-2523","type":"journal_article","publication":"Physica E: Low-dimensional Systems and Nanostructures"},{"_id":"7251","date_updated":"2022-01-06T07:03:30Z","publisher":"SPIE","publication":"Plasmonics: Metallic Nanostructures and Their Optical Properties VIII","date_created":"2019-01-30T07:22:54Z","status":"public","type":"conference","year":"2010","language":[{"iso":"eng"}],"user_id":"30525","publication_status":"published","citation":{"ama":"Ishikawa A, Oulton RF, Zentgraf T, Zhang X. Extremely low-loss slow-light modes in plasmonic dielectric hybrid systems. In: Stockman MI, ed. <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>. SPIE; 2010. doi:<a href=\"https://doi.org/10.1117/12.860190\">10.1117/12.860190</a>","apa":"Ishikawa, A., Oulton, R. F., Zentgraf, T., &#38; Zhang, X. (2010). Extremely low-loss slow-light modes in plasmonic dielectric hybrid systems. In M. I. Stockman (Ed.), <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>. SPIE. <a href=\"https://doi.org/10.1117/12.860190\">https://doi.org/10.1117/12.860190</a>","ieee":"A. Ishikawa, R. F. Oulton, T. Zentgraf, and X. Zhang, “Extremely low-loss slow-light modes in plasmonic dielectric hybrid systems,” in <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>, 2010.","chicago":"Ishikawa, Atsushi, Rupert F. Oulton, Thomas Zentgraf, and Xiang Zhang. “Extremely Low-Loss Slow-Light Modes in Plasmonic Dielectric Hybrid Systems.” In <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>, edited by Mark I. Stockman. SPIE, 2010. <a href=\"https://doi.org/10.1117/12.860190\">https://doi.org/10.1117/12.860190</a>.","bibtex":"@inproceedings{Ishikawa_Oulton_Zentgraf_Zhang_2010, title={Extremely low-loss slow-light modes in plasmonic dielectric hybrid systems}, DOI={<a href=\"https://doi.org/10.1117/12.860190\">10.1117/12.860190</a>}, booktitle={Plasmonics: Metallic Nanostructures and Their Optical Properties VIII}, publisher={SPIE}, author={Ishikawa, Atsushi and Oulton, Rupert F. and Zentgraf, Thomas and Zhang, Xiang}, editor={Stockman, Mark I.Editor}, year={2010} }","mla":"Ishikawa, Atsushi, et al. “Extremely Low-Loss Slow-Light Modes in Plasmonic Dielectric Hybrid Systems.” <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>, edited by Mark I. Stockman, SPIE, 2010, doi:<a href=\"https://doi.org/10.1117/12.860190\">10.1117/12.860190</a>.","short":"A. Ishikawa, R.F. Oulton, T. Zentgraf, X. Zhang, in: M.I. Stockman (Ed.), Plasmonics: Metallic Nanostructures and Their Optical Properties VIII, SPIE, 2010."},"department":[{"_id":"15"},{"_id":"230"}],"editor":[{"full_name":"Stockman, Mark I.","first_name":"Mark I.","last_name":"Stockman"}],"author":[{"last_name":"Ishikawa","first_name":"Atsushi","full_name":"Ishikawa, Atsushi"},{"first_name":"Rupert F.","full_name":"Oulton, Rupert F.","last_name":"Oulton"},{"orcid":"0000-0002-8662-1101","first_name":"Thomas","full_name":"Zentgraf, Thomas","last_name":"Zentgraf","id":"30525"},{"full_name":"Zhang, Xiang","first_name":"Xiang","last_name":"Zhang"}],"title":"Extremely low-loss slow-light modes in plasmonic dielectric hybrid systems","doi":"10.1117/12.860190"},{"doi":"10.1117/12.859136","author":[{"full_name":"Sorger, Volker J.","first_name":"Volker J.","last_name":"Sorger"},{"last_name":"Oulton","first_name":"Rupert F.","full_name":"Oulton, Rupert F."},{"id":"30525","last_name":"Zentgraf","first_name":"Thomas","full_name":"Zentgraf, Thomas","orcid":"0000-0002-8662-1101"},{"full_name":"Ma, Renmin","first_name":"Renmin","last_name":"Ma"},{"first_name":"Christopher","full_name":"Gladden, Christopher","last_name":"Gladden"},{"full_name":"Dai, Lun","first_name":"Lun","last_name":"Dai"},{"full_name":"Bartal, Guy","first_name":"Guy","last_name":"Bartal"},{"full_name":"Zhang, Xiang","first_name":"Xiang","last_name":"Zhang"}],"editor":[{"full_name":"Stockman, Mark I.","first_name":"Mark I.","last_name":"Stockman"}],"title":"Semiconductor plasmon laser","department":[{"_id":"15"},{"_id":"230"}],"publication_status":"published","user_id":"30525","citation":{"short":"V.J. Sorger, R.F. Oulton, T. Zentgraf, R. Ma, C. Gladden, L. Dai, G. Bartal, X. Zhang, in: M.I. Stockman (Ed.), Plasmonics: Metallic Nanostructures and Their Optical Properties VIII, SPIE, 2010.","mla":"Sorger, Volker J., et al. “Semiconductor Plasmon Laser.” <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>, edited by Mark I. Stockman, SPIE, 2010, doi:<a href=\"https://doi.org/10.1117/12.859136\">10.1117/12.859136</a>.","bibtex":"@inproceedings{Sorger_Oulton_Zentgraf_Ma_Gladden_Dai_Bartal_Zhang_2010, title={Semiconductor plasmon laser}, DOI={<a href=\"https://doi.org/10.1117/12.859136\">10.1117/12.859136</a>}, booktitle={Plasmonics: Metallic Nanostructures and Their Optical Properties VIII}, publisher={SPIE}, author={Sorger, Volker J. and Oulton, Rupert F. and Zentgraf, Thomas and Ma, Renmin and Gladden, Christopher and Dai, Lun and Bartal, Guy and Zhang, Xiang}, editor={Stockman, Mark I.Editor}, year={2010} }","chicago":"Sorger, Volker J., Rupert F. Oulton, Thomas Zentgraf, Renmin Ma, Christopher Gladden, Lun Dai, Guy Bartal, and Xiang Zhang. “Semiconductor Plasmon Laser.” In <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>, edited by Mark I. Stockman. SPIE, 2010. <a href=\"https://doi.org/10.1117/12.859136\">https://doi.org/10.1117/12.859136</a>.","ieee":"V. J. Sorger <i>et al.</i>, “Semiconductor plasmon laser,” in <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>, 2010.","apa":"Sorger, V. J., Oulton, R. F., Zentgraf, T., Ma, R., Gladden, C., Dai, L., … Zhang, X. (2010). Semiconductor plasmon laser. In M. I. Stockman (Ed.), <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>. SPIE. <a href=\"https://doi.org/10.1117/12.859136\">https://doi.org/10.1117/12.859136</a>","ama":"Sorger VJ, Oulton RF, Zentgraf T, et al. Semiconductor plasmon laser. In: Stockman MI, ed. <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>. SPIE; 2010. doi:<a href=\"https://doi.org/10.1117/12.859136\">10.1117/12.859136</a>"},"status":"public","language":[{"iso":"eng"}],"type":"conference","year":"2010","publisher":"SPIE","date_created":"2019-01-30T07:24:06Z","publication":"Plasmonics: Metallic Nanostructures and Their Optical Properties VIII","date_updated":"2022-01-06T07:03:30Z","_id":"7252"},{"citation":{"ieee":"M. Mehta and C. Meier, “Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals,” <i>Journal of The Electrochemical Society</i>, vol. 158, no. 2, 2010.","chicago":"Mehta, M., and Cedrik Meier. “Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals.” <i>Journal of The Electrochemical Society</i> 158, no. 2 (2010). <a href=\"https://doi.org/10.1149/1.3519999\">https://doi.org/10.1149/1.3519999</a>.","apa":"Mehta, M., &#38; Meier, C. (2010). Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals. <i>Journal of The Electrochemical Society</i>, <i>158</i>(2). <a href=\"https://doi.org/10.1149/1.3519999\">https://doi.org/10.1149/1.3519999</a>","ama":"Mehta M, Meier C. Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals. <i>Journal of The Electrochemical Society</i>. 2010;158(2). doi:<a href=\"https://doi.org/10.1149/1.3519999\">10.1149/1.3519999</a>","short":"M. Mehta, C. Meier, Journal of The Electrochemical Society 158 (2010).","bibtex":"@article{Mehta_Meier_2010, title={Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals}, volume={158}, DOI={<a href=\"https://doi.org/10.1149/1.3519999\">10.1149/1.3519999</a>}, number={2H119}, journal={Journal of The Electrochemical Society}, publisher={The Electrochemical Society}, author={Mehta, M. and Meier, Cedrik}, year={2010} }","mla":"Mehta, M., and Cedrik Meier. “Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals.” <i>Journal of The Electrochemical Society</i>, vol. 158, no. 2, H119, The Electrochemical Society, 2010, doi:<a href=\"https://doi.org/10.1149/1.3519999\">10.1149/1.3519999</a>."},"publication_status":"published","user_id":"20798","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"287"}],"title":"Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals","author":[{"last_name":"Mehta","first_name":"M.","full_name":"Mehta, M."},{"orcid":"https://orcid.org/0000-0002-3787-3572","id":"20798","last_name":"Meier","first_name":"Cedrik","full_name":"Meier, Cedrik"}],"doi":"10.1149/1.3519999","intvolume":"       158","_id":"7494","volume":158,"article_number":"H119","issue":"2","date_updated":"2022-01-06T07:03:39Z","date_created":"2019-02-04T14:35:22Z","publication":"Journal of The Electrochemical Society","publisher":"The Electrochemical Society","language":[{"iso":"eng"}],"publication_identifier":{"issn":["0013-4651"]},"year":"2010","type":"journal_article","status":"public"},{"_id":"7496","volume":21,"article_number":"455201","issue":"45","date_updated":"2022-01-06T07:03:39Z","date_created":"2019-02-04T14:39:19Z","publication":"Nanotechnology","publisher":"IOP Publishing","language":[{"iso":"eng"}],"year":"2010","publication_identifier":{"issn":["0957-4484","1361-6528"]},"type":"journal_article","status":"public","citation":{"apa":"Theis, J., Geller, M., Lorke, A., Wiggers, H., Wieck, A., &#38; Meier, C. (2010). Electroluminescence from silicon nanoparticles fabricated from the gas phase. <i>Nanotechnology</i>, <i>21</i>(45). <a href=\"https://doi.org/10.1088/0957-4484/21/45/455201\">https://doi.org/10.1088/0957-4484/21/45/455201</a>","ama":"Theis J, Geller M, Lorke A, Wiggers H, Wieck A, Meier C. Electroluminescence from silicon nanoparticles fabricated from the gas phase. <i>Nanotechnology</i>. 2010;21(45). doi:<a href=\"https://doi.org/10.1088/0957-4484/21/45/455201\">10.1088/0957-4484/21/45/455201</a>","ieee":"J. Theis, M. Geller, A. Lorke, H. Wiggers, A. Wieck, and C. Meier, “Electroluminescence from silicon nanoparticles fabricated from the gas phase,” <i>Nanotechnology</i>, vol. 21, no. 45, 2010.","chicago":"Theis, Jens, Martin Geller, Axel Lorke, Hartmut Wiggers, Andreas Wieck, and Cedrik Meier. “Electroluminescence from Silicon Nanoparticles Fabricated from the Gas Phase.” <i>Nanotechnology</i> 21, no. 45 (2010). <a href=\"https://doi.org/10.1088/0957-4484/21/45/455201\">https://doi.org/10.1088/0957-4484/21/45/455201</a>.","bibtex":"@article{Theis_Geller_Lorke_Wiggers_Wieck_Meier_2010, title={Electroluminescence from silicon nanoparticles fabricated from the gas phase}, volume={21}, DOI={<a href=\"https://doi.org/10.1088/0957-4484/21/45/455201\">10.1088/0957-4484/21/45/455201</a>}, number={45455201}, journal={Nanotechnology}, publisher={IOP Publishing}, author={Theis, Jens and Geller, Martin and Lorke, Axel and Wiggers, Hartmut and Wieck, Andreas and Meier, Cedrik}, year={2010} }","mla":"Theis, Jens, et al. “Electroluminescence from Silicon Nanoparticles Fabricated from the Gas Phase.” <i>Nanotechnology</i>, vol. 21, no. 45, 455201, IOP Publishing, 2010, doi:<a href=\"https://doi.org/10.1088/0957-4484/21/45/455201\">10.1088/0957-4484/21/45/455201</a>.","short":"J. Theis, M. Geller, A. Lorke, H. Wiggers, A. Wieck, C. Meier, Nanotechnology 21 (2010)."},"publication_status":"published","user_id":"20798","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"287"}],"title":"Electroluminescence from silicon nanoparticles fabricated from the gas phase","author":[{"last_name":"Theis","first_name":"Jens","full_name":"Theis, Jens"},{"last_name":"Geller","full_name":"Geller, Martin","first_name":"Martin"},{"last_name":"Lorke","first_name":"Axel","full_name":"Lorke, Axel"},{"full_name":"Wiggers, Hartmut","first_name":"Hartmut","last_name":"Wiggers"},{"last_name":"Wieck","first_name":"Andreas","full_name":"Wieck, Andreas"},{"first_name":"Cedrik","full_name":"Meier, Cedrik","id":"20798","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572"}],"intvolume":"        21","doi":"10.1088/0957-4484/21/45/455201"},{"publisher":"IOP Publishing","date_created":"2018-08-27T10:33:04Z","status":"public","language":[{"iso":"eng"}],"publication_identifier":{"issn":["1742-6596"]},"year":"2010","file_date_updated":"2018-08-27T10:34:26Z","_id":"4129","date_updated":"2022-01-06T07:00:22Z","author":[{"full_name":"Grodecka-Grad, Anna","first_name":"Anna","last_name":"Grodecka-Grad"},{"orcid":"0000-0001-7059-9862","first_name":"Jens","full_name":"Förstner, Jens","last_name":"Förstner","id":"158"}],"article_type":"original","intvolume":"       245","publication_status":"published","citation":{"apa":"Grodecka-Grad, A., &#38; Förstner, J. (2010). Phonon-mediated relaxation in doped quantum dot molecules. <i>Journal of Physics: Conference Series</i>, <i>245</i>. <a href=\"https://doi.org/10.1088/1742-6596/245/1/012035\">https://doi.org/10.1088/1742-6596/245/1/012035</a>","ama":"Grodecka-Grad A, Förstner J. Phonon-mediated relaxation in doped quantum dot molecules. <i>Journal of Physics: Conference Series</i>. 2010;245. doi:<a href=\"https://doi.org/10.1088/1742-6596/245/1/012035\">10.1088/1742-6596/245/1/012035</a>","chicago":"Grodecka-Grad, Anna, and Jens Förstner. “Phonon-Mediated Relaxation in Doped Quantum Dot Molecules.” <i>Journal of Physics: Conference Series</i> 245 (2010). <a href=\"https://doi.org/10.1088/1742-6596/245/1/012035\">https://doi.org/10.1088/1742-6596/245/1/012035</a>.","ieee":"A. Grodecka-Grad and J. Förstner, “Phonon-mediated relaxation in doped quantum dot molecules,” <i>Journal of Physics: Conference Series</i>, vol. 245, 2010.","mla":"Grodecka-Grad, Anna, and Jens Förstner. “Phonon-Mediated Relaxation in Doped Quantum Dot Molecules.” <i>Journal of Physics: Conference Series</i>, vol. 245, 012035, IOP Publishing, 2010, doi:<a href=\"https://doi.org/10.1088/1742-6596/245/1/012035\">10.1088/1742-6596/245/1/012035</a>.","bibtex":"@article{Grodecka-Grad_Förstner_2010, title={Phonon-mediated relaxation in doped quantum dot molecules}, volume={245}, DOI={<a href=\"https://doi.org/10.1088/1742-6596/245/1/012035\">10.1088/1742-6596/245/1/012035</a>}, number={012035}, journal={Journal of Physics: Conference Series}, publisher={IOP Publishing}, author={Grodecka-Grad, Anna and Förstner, Jens}, year={2010} }","short":"A. Grodecka-Grad, J. Förstner, Journal of Physics: Conference Series 245 (2010)."},"department":[{"_id":"15"}],"ddc":["530"],"publication":"Journal of Physics: Conference Series","type":"journal_article","volume":245,"article_number":"012035","file":[{"content_type":"application/pdf","access_level":"closed","file_id":"4130","date_created":"2018-08-27T10:34:26Z","creator":"hclaudia","file_name":"2010 Grodecka-Grad,Förstner_Phonon-mediated relaxation in doped quantum dot molecules.pdf","file_size":896613,"success":1,"date_updated":"2018-08-27T10:34:26Z","relation":"main_file"}],"title":"Phonon-mediated relaxation in doped quantum dot molecules","doi":"10.1088/1742-6596/245/1/012035","abstract":[{"lang":"eng","text":"We study a single quantum dot molecule doped with one electron in the presence of electron-phonon coupling. Both diagonal and off-diagonal interactions representing real and virtual processes with acoustic phonons via deformation potential and piezoelectric coupling are taken into account. We employ a non-perturbative quantum kinetic theory and show that the phonon-mediated relaxation is dominated by an electron tunneling on a picosecond time scale.A dependence of the relaxation on the temperature and the strength of the tunneling coupling is analyzed."}],"has_accepted_license":"1","keyword":["tet_topic_qd"],"user_id":"55706"},{"date_created":"2018-08-27T12:34:33Z","publisher":"Elsevier BV","language":[{"iso":"eng"}],"year":"2010","publication_identifier":{"issn":["0022-0248"]},"status":"public","_id":"4144","file_date_updated":"2018-08-27T12:35:32Z","date_updated":"2022-01-06T07:00:24Z","article_type":"original","author":[{"last_name":"Kemper","full_name":"Kemper, R.M.","first_name":"R.M."},{"full_name":"Weinl, M.","first_name":"M.","last_name":"Weinl"},{"last_name":"Mietze","full_name":"Mietze, C.","first_name":"C."},{"last_name":"Häberlen","full_name":"Häberlen, M.","first_name":"M."},{"first_name":"T.","full_name":"Schupp, T.","last_name":"Schupp"},{"last_name":"Tschumak","full_name":"Tschumak, E.","first_name":"E."},{"full_name":"Lindner, Jörg","first_name":"Jörg","id":"20797","last_name":"Lindner"},{"last_name":"Lischka","first_name":"K.","full_name":"Lischka, K."},{"last_name":"As","first_name":"Donald ","full_name":"As, Donald "}],"intvolume":"       323","citation":{"ama":"Kemper RM, Weinl M, Mietze C, et al. Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates. <i>Journal of Crystal Growth</i>. 2010;323(1):84-87. doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2010.12.042\">10.1016/j.jcrysgro.2010.12.042</a>","apa":"Kemper, R. M., Weinl, M., Mietze, C., Häberlen, M., Schupp, T., Tschumak, E., … As, D. (2010). Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates. <i>Journal of Crystal Growth</i>, <i>323</i>(1), 84–87. <a href=\"https://doi.org/10.1016/j.jcrysgro.2010.12.042\">https://doi.org/10.1016/j.jcrysgro.2010.12.042</a>","chicago":"Kemper, R.M., M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak, Jörg Lindner, K. Lischka, and Donald  As. “Growth of Cubic GaN on Nano-Patterned 3C-SiC/Si (001) Substrates.” <i>Journal of Crystal Growth</i> 323, no. 1 (2010): 84–87. <a href=\"https://doi.org/10.1016/j.jcrysgro.2010.12.042\">https://doi.org/10.1016/j.jcrysgro.2010.12.042</a>.","ieee":"R. M. Kemper <i>et al.</i>, “Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates,” <i>Journal of Crystal Growth</i>, vol. 323, no. 1, pp. 84–87, 2010.","mla":"Kemper, R. M., et al. “Growth of Cubic GaN on Nano-Patterned 3C-SiC/Si (001) Substrates.” <i>Journal of Crystal Growth</i>, vol. 323, no. 1, Elsevier BV, 2010, pp. 84–87, doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2010.12.042\">10.1016/j.jcrysgro.2010.12.042</a>.","bibtex":"@article{Kemper_Weinl_Mietze_Häberlen_Schupp_Tschumak_Lindner_Lischka_As_2010, title={Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates}, volume={323}, DOI={<a href=\"https://doi.org/10.1016/j.jcrysgro.2010.12.042\">10.1016/j.jcrysgro.2010.12.042</a>}, number={1}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Kemper, R.M. and Weinl, M. and Mietze, C. and Häberlen, M. and Schupp, T. and Tschumak, E. and Lindner, Jörg and Lischka, K. and As, Donald }, year={2010}, pages={84–87} }","short":"R.M. Kemper, M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak, J. Lindner, K. Lischka, D. As, Journal of Crystal Growth 323 (2010) 84–87."},"publication_status":"published","department":[{"_id":"15"},{"_id":"286"}],"publication":"Journal of Crystal Growth","ddc":["530"],"type":"journal_article","page":"84-87","volume":323,"issue":"1","title":"Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates","file":[{"success":1,"date_updated":"2018-08-27T12:35:32Z","relation":"main_file","date_created":"2018-08-27T12:35:32Z","content_type":"application/pdf","file_id":"4145","access_level":"closed","file_name":"Growth of cubic GaN on nano-patterned 3C-SiC (001) substrates.pdf","file_size":665964,"creator":"hclaudia"}],"has_accepted_license":"1","doi":"10.1016/j.jcrysgro.2010.12.042","abstract":[{"lang":"eng","text":"Non-polar relaxed cubic GaN was grown by molecular beam epitaxy (MBE) on nano-patterned 3C-SiC/Si \r\n(0 0 1)substrates with negligible hexagonal content and less defect density than in planar cubic GaN layers.Nano-patterning of 3C-SiC/Si(001) is achieved by self-ordered colloidal masks for the first time. The method presented here offers the possibility to create nano-patterned cubic GaN without the need for a GaN etching process andt hus isa potential alternative to the conventional top–down fabrication techniques."}],"user_id":"55706"},{"department":[{"_id":"286"},{"_id":"230"}],"citation":{"bibtex":"@article{Gogel_Weinl_Lindner_Stritzker_2010, title={Plasma modification of nanosphere lithography masks made of polystyrene beads}, volume={12}, number={3}, journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS}, author={Gogel, D. and Weinl, M. and Lindner, Jörg and Stritzker, B.}, year={2010}, pages={740–744} }","mla":"Gogel, D., et al. “Plasma Modification of Nanosphere Lithography Masks Made of Polystyrene Beads.” <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i>, vol. 12, no. 3, 2010, pp. 740–44.","short":"D. Gogel, M. Weinl, J. Lindner, B. Stritzker, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 12 (2010) 740–744.","apa":"Gogel, D., Weinl, M., Lindner, J., &#38; Stritzker, B. (2010). Plasma modification of nanosphere lithography masks made of polystyrene beads. <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i>, <i>12</i>(3), 740–744.","ama":"Gogel D, Weinl M, Lindner J, Stritzker B. Plasma modification of nanosphere lithography masks made of polystyrene beads. <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i>. 2010;12(3):740-744.","ieee":"D. Gogel, M. Weinl, J. Lindner, and B. Stritzker, “Plasma modification of nanosphere lithography masks made of polystyrene beads,” <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i>, vol. 12, no. 3, pp. 740–744, 2010.","chicago":"Gogel, D., M. Weinl, Jörg Lindner, and B. Stritzker. “Plasma Modification of Nanosphere Lithography Masks Made of Polystyrene Beads.” <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i> 12, no. 3 (2010): 740–44."},"user_id":"55706","intvolume":"        12","abstract":[{"lang":"eng","text":"Nanosphere lithography (NSL) masks consisting of mono- or double-layers of polystyrene (PS) nano-beads are fabricated on silicon exploiting the self-organization of PS particles during the controlled drying of a colloidal suspension on a surface. The shape changes and shrinkage of PS sphere masks upon treatment in an air plasma are studied as a function of initial sphere size, plasma power and treatment time. The influence of several experimental parameters, including the plasma induced temperature rise, are analysed using scanning and transmission electron microscopy. It is demonstrated that a variety of new intriguing nanopatterns can be generated on silicon surfaces by the combination of NSL and plasma techniques, largely broadening the variety of patterns available so far by NSL."}],"title":"Plasma modification of nanosphere lithography masks made of polystyrene beads","article_type":"original","author":[{"first_name":"D.","full_name":"Gogel, D.","last_name":"Gogel"},{"last_name":"Weinl","first_name":"M.","full_name":"Weinl, M."},{"first_name":"Jörg","full_name":"Lindner, Jörg","last_name":"Lindner","id":"20797"},{"first_name":"B.","full_name":"Stritzker, B.","last_name":"Stritzker"}],"issue":"3","date_updated":"2022-01-06T07:00:26Z","page":"740-744","_id":"4153","volume":12,"language":[{"iso":"eng"}],"year":"2010","type":"journal_article","status":"public","date_created":"2018-08-27T13:29:28Z","publication":"JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS"},{"publication_status":"published","citation":{"ama":"Grodecka-Grad A, Förstner J. Theory of phonon-mediated relaxation in doped quantum dot molecules. <i>Physical Review B</i>. 2010;81(11). doi:<a href=\"https://doi.org/10.1103/physrevb.81.115305\">10.1103/physrevb.81.115305</a>","apa":"Grodecka-Grad, A., &#38; Förstner, J. (2010). Theory of phonon-mediated relaxation in doped quantum dot molecules. <i>Physical Review B</i>, <i>81</i>(11). <a href=\"https://doi.org/10.1103/physrevb.81.115305\">https://doi.org/10.1103/physrevb.81.115305</a>","chicago":"Grodecka-Grad, A., and Jens Förstner. “Theory of Phonon-Mediated Relaxation in Doped Quantum Dot Molecules.” <i>Physical Review B</i> 81, no. 11 (2010). <a href=\"https://doi.org/10.1103/physrevb.81.115305\">https://doi.org/10.1103/physrevb.81.115305</a>.","ieee":"A. Grodecka-Grad and J. Förstner, “Theory of phonon-mediated relaxation in doped quantum dot molecules,” <i>Physical Review B</i>, vol. 81, no. 11, 2010.","mla":"Grodecka-Grad, A., and Jens Förstner. “Theory of Phonon-Mediated Relaxation in Doped Quantum Dot Molecules.” <i>Physical Review B</i>, vol. 81, no. 11, 115305, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.81.115305\">10.1103/physrevb.81.115305</a>.","bibtex":"@article{Grodecka-Grad_Förstner_2010, title={Theory of phonon-mediated relaxation in doped quantum dot molecules}, volume={81}, DOI={<a href=\"https://doi.org/10.1103/physrevb.81.115305\">10.1103/physrevb.81.115305</a>}, number={11115305}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Grodecka-Grad, A. and Förstner, Jens}, year={2010} }","short":"A. Grodecka-Grad, J. Förstner, Physical Review B 81 (2010)."},"department":[{"_id":"15"}],"author":[{"full_name":"Grodecka-Grad, A.","first_name":"A.","last_name":"Grodecka-Grad"},{"first_name":"Jens","full_name":"Förstner, Jens","last_name":"Förstner","id":"158","orcid":"0000-0001-7059-9862"}],"urn":"41740","article_type":"original","intvolume":"        81","file_date_updated":"2018-09-04T19:58:41Z","_id":"4174","date_updated":"2022-01-06T07:00:29Z","publisher":"American Physical Society (APS)","date_created":"2018-08-28T08:57:24Z","status":"public","language":[{"iso":"eng"}],"year":"2010","publication_identifier":{"issn":["1098-0121","1550-235X"]},"keyword":["tet_topic_qd"],"user_id":"158","oa":"1","file":[{"date_updated":"2018-09-04T19:58:41Z","relation":"main_file","creator":"hclaudia","file_size":680408,"file_name":"2010 Grodecka-Grad,Förstner_Theory of phonon-mediated relaxation in doped quantum dot molecules.pdf","file_id":"4175","access_level":"open_access","content_type":"application/pdf","date_created":"2018-08-28T08:58:21Z"}],"title":"Theory of phonon-mediated relaxation in doped quantum dot molecules","doi":"10.1103/physrevb.81.115305","abstract":[{"text":"A quantum dot molecule doped with a single electron in the presence of diagonal and off-diagonal carrierphonon\r\ncouplings is studied by means of a nonperturbative quantum kinetic theory. The interaction with acoustic phonons by deformation potential and piezoelectric coupling is taken into account. We show that the phonon-mediated relaxation is fast on a picosecond time scale and is dominated by the usually neglected off-diagonal coupling to the lattice degrees of freedom leading to phonon-assisted electron tunneling. We show that in the parameter regime of current electrical and optical experiments, the microscopic non-Markovian theory has to be employed.","lang":"eng"}],"has_accepted_license":"1","volume":81,"issue":"11","article_number":"115305","publication":"Physical Review B","ddc":["530"],"type":"journal_article"},{"user_id":"55706","abstract":[{"text":"A heterojunction field-effect transistor (HFET) was fabricated of nonpolar cubic AlGaN/GaN grown on Ar+ implanted 3C–SiC (001) by molecular beam epitaxy. The device shows a clear field effect at positive bias voltages with V_th=0.6 V. The HFET output characteristics were calculated using ATLAS simulation program. The electron channel at the cubic AlGaN/GaN interface was detected by room temperature capacitance-voltage measurements.","lang":"eng"}],"doi":"10.1063/1.3455066","has_accepted_license":"1","title":"Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)","file":[{"success":1,"relation":"main_file","date_updated":"2018-08-28T11:58:27Z","content_type":"application/pdf","access_level":"closed","file_id":"4195","date_created":"2018-08-28T11:58:27Z","creator":"hclaudia","file_name":"Non-polar cubic AlGaN-GaN HFET on Ar+ implanted 3C-SiC 001.pdf","file_size":277385}],"article_number":"253501","issue":"25","volume":96,"type":"journal_article","publication":"Applied Physics Letters","ddc":["530"],"department":[{"_id":"15"},{"_id":"286"}],"citation":{"short":"E. Tschumak, R. Granzner, J. Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, D. As, Applied Physics Letters 96 (2010).","bibtex":"@article{Tschumak_Granzner_Lindner_Schwierz_Lischka_Nagasawa_Abe_As_2010, title={Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)}, volume={96}, DOI={<a href=\"https://doi.org/10.1063/1.3455066\">10.1063/1.3455066</a>}, number={25253501}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tschumak, E. and Granzner, R. and Lindner, Jörg and Schwierz, F. and Lischka, K. and Nagasawa, H. and Abe, M. and As, Donald}, year={2010} }","mla":"Tschumak, E., et al. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor on Ar+ Implanted 3C–SiC (001).” <i>Applied Physics Letters</i>, vol. 96, no. 25, 253501, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3455066\">10.1063/1.3455066</a>.","ieee":"E. Tschumak <i>et al.</i>, “Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001),” <i>Applied Physics Letters</i>, vol. 96, no. 25, 2010.","chicago":"Tschumak, E., R. Granzner, Jörg Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, and Donald As. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor on Ar+ Implanted 3C–SiC (001).” <i>Applied Physics Letters</i> 96, no. 25 (2010). <a href=\"https://doi.org/10.1063/1.3455066\">https://doi.org/10.1063/1.3455066</a>.","ama":"Tschumak E, Granzner R, Lindner J, et al. Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). <i>Applied Physics Letters</i>. 2010;96(25). doi:<a href=\"https://doi.org/10.1063/1.3455066\">10.1063/1.3455066</a>","apa":"Tschumak, E., Granzner, R., Lindner, J., Schwierz, F., Lischka, K., Nagasawa, H., … As, D. (2010). Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). <i>Applied Physics Letters</i>, <i>96</i>(25). <a href=\"https://doi.org/10.1063/1.3455066\">https://doi.org/10.1063/1.3455066</a>"},"publication_status":"published","intvolume":"        96","article_type":"original","author":[{"full_name":"Tschumak, E.","first_name":"E.","last_name":"Tschumak"},{"last_name":"Granzner","first_name":"R.","full_name":"Granzner, R."},{"id":"20797","last_name":"Lindner","first_name":"Jörg","full_name":"Lindner, Jörg"},{"last_name":"Schwierz","full_name":"Schwierz, F.","first_name":"F."},{"last_name":"Lischka","first_name":"K.","full_name":"Lischka, K."},{"full_name":"Nagasawa, H.","first_name":"H.","last_name":"Nagasawa"},{"last_name":"Abe","first_name":"M.","full_name":"Abe, M."},{"last_name":"As","full_name":"As, Donald","first_name":"Donald"}],"date_updated":"2022-01-06T07:00:33Z","file_date_updated":"2018-08-28T11:58:27Z","_id":"4194","language":[{"iso":"eng"}],"year":"2010","publication_identifier":{"issn":["0003-6951","1077-3118"]},"status":"public","date_created":"2018-08-28T11:56:08Z","publisher":"AIP Publishing"}]