[{"status":"public","type":"journal_article","article_type":"original","file_date_updated":"2018-08-27T12:35:32Z","_id":"4144","department":[{"_id":"15"},{"_id":"286"}],"user_id":"55706","page":"84-87","intvolume":"       323","citation":{"ieee":"R. M. Kemper <i>et al.</i>, “Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates,” <i>Journal of Crystal Growth</i>, vol. 323, no. 1, pp. 84–87, 2010.","chicago":"Kemper, R.M., M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak, Jörg Lindner, K. Lischka, and Donald  As. “Growth of Cubic GaN on Nano-Patterned 3C-SiC/Si (001) Substrates.” <i>Journal of Crystal Growth</i> 323, no. 1 (2010): 84–87. <a href=\"https://doi.org/10.1016/j.jcrysgro.2010.12.042\">https://doi.org/10.1016/j.jcrysgro.2010.12.042</a>.","ama":"Kemper RM, Weinl M, Mietze C, et al. Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates. <i>Journal of Crystal Growth</i>. 2010;323(1):84-87. doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2010.12.042\">10.1016/j.jcrysgro.2010.12.042</a>","short":"R.M. Kemper, M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak, J. Lindner, K. Lischka, D. As, Journal of Crystal Growth 323 (2010) 84–87.","bibtex":"@article{Kemper_Weinl_Mietze_Häberlen_Schupp_Tschumak_Lindner_Lischka_As_2010, title={Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates}, volume={323}, DOI={<a href=\"https://doi.org/10.1016/j.jcrysgro.2010.12.042\">10.1016/j.jcrysgro.2010.12.042</a>}, number={1}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Kemper, R.M. and Weinl, M. and Mietze, C. and Häberlen, M. and Schupp, T. and Tschumak, E. and Lindner, Jörg and Lischka, K. and As, Donald }, year={2010}, pages={84–87} }","mla":"Kemper, R. M., et al. “Growth of Cubic GaN on Nano-Patterned 3C-SiC/Si (001) Substrates.” <i>Journal of Crystal Growth</i>, vol. 323, no. 1, Elsevier BV, 2010, pp. 84–87, doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2010.12.042\">10.1016/j.jcrysgro.2010.12.042</a>.","apa":"Kemper, R. M., Weinl, M., Mietze, C., Häberlen, M., Schupp, T., Tschumak, E., … As, D. (2010). Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates. <i>Journal of Crystal Growth</i>, <i>323</i>(1), 84–87. <a href=\"https://doi.org/10.1016/j.jcrysgro.2010.12.042\">https://doi.org/10.1016/j.jcrysgro.2010.12.042</a>"},"has_accepted_license":"1","publication_identifier":{"issn":["0022-0248"]},"publication_status":"published","doi":"10.1016/j.jcrysgro.2010.12.042","date_updated":"2022-01-06T07:00:24Z","volume":323,"author":[{"first_name":"R.M.","full_name":"Kemper, R.M.","last_name":"Kemper"},{"first_name":"M.","full_name":"Weinl, M.","last_name":"Weinl"},{"full_name":"Mietze, C.","last_name":"Mietze","first_name":"C."},{"full_name":"Häberlen, M.","last_name":"Häberlen","first_name":"M."},{"first_name":"T.","full_name":"Schupp, T.","last_name":"Schupp"},{"full_name":"Tschumak, E.","last_name":"Tschumak","first_name":"E."},{"first_name":"Jörg","full_name":"Lindner, Jörg","id":"20797","last_name":"Lindner"},{"first_name":"K.","last_name":"Lischka","full_name":"Lischka, K."},{"full_name":"As, Donald ","last_name":"As","first_name":"Donald "}],"abstract":[{"text":"Non-polar relaxed cubic GaN was grown by molecular beam epitaxy (MBE) on nano-patterned 3C-SiC/Si \r\n(0 0 1)substrates with negligible hexagonal content and less defect density than in planar cubic GaN layers.Nano-patterning of 3C-SiC/Si(001) is achieved by self-ordered colloidal masks for the first time. The method presented here offers the possibility to create nano-patterned cubic GaN without the need for a GaN etching process andt hus isa potential alternative to the conventional top–down fabrication techniques.","lang":"eng"}],"file":[{"date_created":"2018-08-27T12:35:32Z","creator":"hclaudia","date_updated":"2018-08-27T12:35:32Z","access_level":"closed","file_name":"Growth of cubic GaN on nano-patterned 3C-SiC (001) substrates.pdf","file_id":"4145","file_size":665964,"content_type":"application/pdf","relation":"main_file","success":1}],"publication":"Journal of Crystal Growth","ddc":["530"],"language":[{"iso":"eng"}],"year":"2010","issue":"1","title":"Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates","publisher":"Elsevier BV","date_created":"2018-08-27T12:34:33Z"},{"_id":"4153","department":[{"_id":"286"},{"_id":"230"}],"user_id":"55706","article_type":"original","language":[{"iso":"eng"}],"publication":"JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS","type":"journal_article","abstract":[{"lang":"eng","text":"Nanosphere lithography (NSL) masks consisting of mono- or double-layers of polystyrene (PS) nano-beads are fabricated on silicon exploiting the self-organization of PS particles during the controlled drying of a colloidal suspension on a surface. The shape changes and shrinkage of PS sphere masks upon treatment in an air plasma are studied as a function of initial sphere size, plasma power and treatment time. The influence of several experimental parameters, including the plasma induced temperature rise, are analysed using scanning and transmission electron microscopy. It is demonstrated that a variety of new intriguing nanopatterns can be generated on silicon surfaces by the combination of NSL and plasma techniques, largely broadening the variety of patterns available so far by NSL."}],"status":"public","date_updated":"2022-01-06T07:00:26Z","volume":12,"date_created":"2018-08-27T13:29:28Z","author":[{"first_name":"D.","last_name":"Gogel","full_name":"Gogel, D."},{"last_name":"Weinl","full_name":"Weinl, M.","first_name":"M."},{"last_name":"Lindner","id":"20797","full_name":"Lindner, Jörg","first_name":"Jörg"},{"first_name":"B.","full_name":"Stritzker, B.","last_name":"Stritzker"}],"title":"Plasma modification of nanosphere lithography masks made of polystyrene beads","issue":"3","year":"2010","intvolume":"        12","page":"740-744","citation":{"ama":"Gogel D, Weinl M, Lindner J, Stritzker B. Plasma modification of nanosphere lithography masks made of polystyrene beads. <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i>. 2010;12(3):740-744.","ieee":"D. Gogel, M. Weinl, J. Lindner, and B. Stritzker, “Plasma modification of nanosphere lithography masks made of polystyrene beads,” <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i>, vol. 12, no. 3, pp. 740–744, 2010.","chicago":"Gogel, D., M. Weinl, Jörg Lindner, and B. Stritzker. “Plasma Modification of Nanosphere Lithography Masks Made of Polystyrene Beads.” <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i> 12, no. 3 (2010): 740–44.","mla":"Gogel, D., et al. “Plasma Modification of Nanosphere Lithography Masks Made of Polystyrene Beads.” <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i>, vol. 12, no. 3, 2010, pp. 740–44.","bibtex":"@article{Gogel_Weinl_Lindner_Stritzker_2010, title={Plasma modification of nanosphere lithography masks made of polystyrene beads}, volume={12}, number={3}, journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS}, author={Gogel, D. and Weinl, M. and Lindner, Jörg and Stritzker, B.}, year={2010}, pages={740–744} }","short":"D. Gogel, M. Weinl, J. Lindner, B. Stritzker, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 12 (2010) 740–744.","apa":"Gogel, D., Weinl, M., Lindner, J., &#38; Stritzker, B. (2010). Plasma modification of nanosphere lithography masks made of polystyrene beads. <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i>, <i>12</i>(3), 740–744."}},{"user_id":"158","department":[{"_id":"15"}],"_id":"4174","file_date_updated":"2018-09-04T19:58:41Z","article_number":"115305","article_type":"original","type":"journal_article","status":"public","urn":"41740","author":[{"first_name":"A.","last_name":"Grodecka-Grad","full_name":"Grodecka-Grad, A."},{"orcid":"0000-0001-7059-9862","last_name":"Förstner","full_name":"Förstner, Jens","id":"158","first_name":"Jens"}],"volume":81,"oa":"1","date_updated":"2022-01-06T07:00:29Z","doi":"10.1103/physrevb.81.115305","publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"has_accepted_license":"1","citation":{"ieee":"A. Grodecka-Grad and J. Förstner, “Theory of phonon-mediated relaxation in doped quantum dot molecules,” <i>Physical Review B</i>, vol. 81, no. 11, 2010.","chicago":"Grodecka-Grad, A., and Jens Förstner. “Theory of Phonon-Mediated Relaxation in Doped Quantum Dot Molecules.” <i>Physical Review B</i> 81, no. 11 (2010). <a href=\"https://doi.org/10.1103/physrevb.81.115305\">https://doi.org/10.1103/physrevb.81.115305</a>.","ama":"Grodecka-Grad A, Förstner J. Theory of phonon-mediated relaxation in doped quantum dot molecules. <i>Physical Review B</i>. 2010;81(11). doi:<a href=\"https://doi.org/10.1103/physrevb.81.115305\">10.1103/physrevb.81.115305</a>","apa":"Grodecka-Grad, A., &#38; Förstner, J. (2010). Theory of phonon-mediated relaxation in doped quantum dot molecules. <i>Physical Review B</i>, <i>81</i>(11). <a href=\"https://doi.org/10.1103/physrevb.81.115305\">https://doi.org/10.1103/physrevb.81.115305</a>","short":"A. Grodecka-Grad, J. Förstner, Physical Review B 81 (2010).","bibtex":"@article{Grodecka-Grad_Förstner_2010, title={Theory of phonon-mediated relaxation in doped quantum dot molecules}, volume={81}, DOI={<a href=\"https://doi.org/10.1103/physrevb.81.115305\">10.1103/physrevb.81.115305</a>}, number={11115305}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Grodecka-Grad, A. and Förstner, Jens}, year={2010} }","mla":"Grodecka-Grad, A., and Jens Förstner. “Theory of Phonon-Mediated Relaxation in Doped Quantum Dot Molecules.” <i>Physical Review B</i>, vol. 81, no. 11, 115305, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.81.115305\">10.1103/physrevb.81.115305</a>."},"intvolume":"        81","language":[{"iso":"eng"}],"ddc":["530"],"keyword":["tet_topic_qd"],"publication":"Physical Review B","file":[{"relation":"main_file","content_type":"application/pdf","access_level":"open_access","file_id":"4175","file_name":"2010 Grodecka-Grad,Förstner_Theory of phonon-mediated relaxation in doped quantum dot molecules.pdf","file_size":680408,"creator":"hclaudia","date_created":"2018-08-28T08:58:21Z","date_updated":"2018-09-04T19:58:41Z"}],"abstract":[{"text":"A quantum dot molecule doped with a single electron in the presence of diagonal and off-diagonal carrierphonon\r\ncouplings is studied by means of a nonperturbative quantum kinetic theory. The interaction with acoustic phonons by deformation potential and piezoelectric coupling is taken into account. We show that the phonon-mediated relaxation is fast on a picosecond time scale and is dominated by the usually neglected off-diagonal coupling to the lattice degrees of freedom leading to phonon-assisted electron tunneling. We show that in the parameter regime of current electrical and optical experiments, the microscopic non-Markovian theory has to be employed.","lang":"eng"}],"date_created":"2018-08-28T08:57:24Z","publisher":"American Physical Society (APS)","title":"Theory of phonon-mediated relaxation in doped quantum dot molecules","issue":"11","year":"2010"},{"_id":"4194","user_id":"55706","department":[{"_id":"15"},{"_id":"286"}],"article_type":"original","article_number":"253501","file_date_updated":"2018-08-28T11:58:27Z","type":"journal_article","status":"public","date_updated":"2022-01-06T07:00:33Z","author":[{"first_name":"E.","full_name":"Tschumak, E.","last_name":"Tschumak"},{"first_name":"R.","last_name":"Granzner","full_name":"Granzner, R."},{"id":"20797","full_name":"Lindner, Jörg","last_name":"Lindner","first_name":"Jörg"},{"last_name":"Schwierz","full_name":"Schwierz, F.","first_name":"F."},{"full_name":"Lischka, K.","last_name":"Lischka","first_name":"K."},{"last_name":"Nagasawa","full_name":"Nagasawa, H.","first_name":"H."},{"first_name":"M.","last_name":"Abe","full_name":"Abe, M."},{"first_name":"Donald","last_name":"As","full_name":"As, Donald"}],"volume":96,"doi":"10.1063/1.3455066","publication_status":"published","has_accepted_license":"1","publication_identifier":{"issn":["0003-6951","1077-3118"]},"citation":{"short":"E. Tschumak, R. Granzner, J. Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, D. As, Applied Physics Letters 96 (2010).","bibtex":"@article{Tschumak_Granzner_Lindner_Schwierz_Lischka_Nagasawa_Abe_As_2010, title={Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)}, volume={96}, DOI={<a href=\"https://doi.org/10.1063/1.3455066\">10.1063/1.3455066</a>}, number={25253501}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tschumak, E. and Granzner, R. and Lindner, Jörg and Schwierz, F. and Lischka, K. and Nagasawa, H. and Abe, M. and As, Donald}, year={2010} }","mla":"Tschumak, E., et al. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor on Ar+ Implanted 3C–SiC (001).” <i>Applied Physics Letters</i>, vol. 96, no. 25, 253501, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3455066\">10.1063/1.3455066</a>.","apa":"Tschumak, E., Granzner, R., Lindner, J., Schwierz, F., Lischka, K., Nagasawa, H., … As, D. (2010). Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). <i>Applied Physics Letters</i>, <i>96</i>(25). <a href=\"https://doi.org/10.1063/1.3455066\">https://doi.org/10.1063/1.3455066</a>","ama":"Tschumak E, Granzner R, Lindner J, et al. Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). <i>Applied Physics Letters</i>. 2010;96(25). doi:<a href=\"https://doi.org/10.1063/1.3455066\">10.1063/1.3455066</a>","ieee":"E. Tschumak <i>et al.</i>, “Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001),” <i>Applied Physics Letters</i>, vol. 96, no. 25, 2010.","chicago":"Tschumak, E., R. Granzner, Jörg Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, and Donald As. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor on Ar+ Implanted 3C–SiC (001).” <i>Applied Physics Letters</i> 96, no. 25 (2010). <a href=\"https://doi.org/10.1063/1.3455066\">https://doi.org/10.1063/1.3455066</a>."},"intvolume":"        96","ddc":["530"],"language":[{"iso":"eng"}],"publication":"Applied Physics Letters","abstract":[{"lang":"eng","text":"A heterojunction field-effect transistor (HFET) was fabricated of nonpolar cubic AlGaN/GaN grown on Ar+ implanted 3C–SiC (001) by molecular beam epitaxy. The device shows a clear field effect at positive bias voltages with V_th=0.6 V. The HFET output characteristics were calculated using ATLAS simulation program. The electron channel at the cubic AlGaN/GaN interface was detected by room temperature capacitance-voltage measurements."}],"file":[{"content_type":"application/pdf","success":1,"relation":"main_file","date_updated":"2018-08-28T11:58:27Z","date_created":"2018-08-28T11:58:27Z","creator":"hclaudia","file_size":277385,"file_id":"4195","access_level":"closed","file_name":"Non-polar cubic AlGaN-GaN HFET on Ar+ implanted 3C-SiC 001.pdf"}],"publisher":"AIP Publishing","date_created":"2018-08-28T11:56:08Z","title":"Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)","issue":"25","year":"2010"},{"status":"public","type":"journal_article","extern":"1","file_date_updated":"2018-08-28T12:23:29Z","article_number":"054517","article_type":"original","user_id":"55706","department":[{"_id":"15"}],"_id":"4200","citation":{"chicago":"Zdravkov, V. I., J. Kehrle, G. Obermeier, S. Gsell, M. Schreck, C. Müller, H.-A. Krug von Nidda, et al. “Reentrant Superconductivity in Superconductor/Ferromagnetic-Alloy Bilayers.” <i>Physical Review B</i> 82, no. 5 (2010). <a href=\"https://doi.org/10.1103/physrevb.82.054517\">https://doi.org/10.1103/physrevb.82.054517</a>.","ieee":"V. I. Zdravkov <i>et al.</i>, “Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers,” <i>Physical Review B</i>, vol. 82, no. 5, 2010.","ama":"Zdravkov VI, Kehrle J, Obermeier G, et al. Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers. <i>Physical Review B</i>. 2010;82(5). doi:<a href=\"https://doi.org/10.1103/physrevb.82.054517\">10.1103/physrevb.82.054517</a>","apa":"Zdravkov, V. I., Kehrle, J., Obermeier, G., Gsell, S., Schreck, M., Müller, C., … Tagirov, L. R. (2010). Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers. <i>Physical Review B</i>, <i>82</i>(5). <a href=\"https://doi.org/10.1103/physrevb.82.054517\">https://doi.org/10.1103/physrevb.82.054517</a>","bibtex":"@article{Zdravkov_Kehrle_Obermeier_Gsell_Schreck_Müller_Krug von Nidda_Lindner_Moosburger-Will_Nold_et al._2010, title={Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers}, volume={82}, DOI={<a href=\"https://doi.org/10.1103/physrevb.82.054517\">10.1103/physrevb.82.054517</a>}, number={5054517}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Zdravkov, V. I. and Kehrle, J. and Obermeier, G. and Gsell, S. and Schreck, M. and Müller, C. and Krug von Nidda, H.-A. and Lindner, Jörg and Moosburger-Will, J. and Nold, E. and et al.}, year={2010} }","short":"V.I. Zdravkov, J. Kehrle, G. Obermeier, S. Gsell, M. Schreck, C. Müller, H.-A. Krug von Nidda, J. Lindner, J. Moosburger-Will, E. Nold, R. Morari, V.V. Ryazanov, A.S. Sidorenko, S. Horn, R. Tidecks, L.R. Tagirov, Physical Review B 82 (2010).","mla":"Zdravkov, V. I., et al. “Reentrant Superconductivity in Superconductor/Ferromagnetic-Alloy Bilayers.” <i>Physical Review B</i>, vol. 82, no. 5, 054517, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.82.054517\">10.1103/physrevb.82.054517</a>."},"intvolume":"        82","publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"has_accepted_license":"1","doi":"10.1103/physrevb.82.054517","author":[{"first_name":"V. I.","full_name":"Zdravkov, V. I.","last_name":"Zdravkov"},{"first_name":"J.","full_name":"Kehrle, J.","last_name":"Kehrle"},{"first_name":"G.","full_name":"Obermeier, G.","last_name":"Obermeier"},{"last_name":"Gsell","full_name":"Gsell, S.","first_name":"S."},{"full_name":"Schreck, M.","last_name":"Schreck","first_name":"M."},{"full_name":"Müller, C.","last_name":"Müller","first_name":"C."},{"first_name":"H.-A.","full_name":"Krug von Nidda, H.-A.","last_name":"Krug von Nidda"},{"first_name":"Jörg","full_name":"Lindner, Jörg","id":"20797","last_name":"Lindner"},{"last_name":"Moosburger-Will","full_name":"Moosburger-Will, J.","first_name":"J."},{"first_name":"E.","last_name":"Nold","full_name":"Nold, E."},{"first_name":"R.","full_name":"Morari, R.","last_name":"Morari"},{"full_name":"Ryazanov, V. V.","last_name":"Ryazanov","first_name":"V. V."},{"full_name":"Sidorenko, A. S.","last_name":"Sidorenko","first_name":"A. S."},{"first_name":"S.","last_name":"Horn","full_name":"Horn, S."},{"first_name":"R.","last_name":"Tidecks","full_name":"Tidecks, R."},{"first_name":"L. R.","full_name":"Tagirov, L. R.","last_name":"Tagirov"}],"volume":82,"date_updated":"2022-01-06T07:00:34Z","file":[{"date_updated":"2018-08-28T12:23:29Z","creator":"hclaudia","date_created":"2018-08-28T12:23:29Z","file_size":723266,"file_name":"Reentrant superconductivity in superconductor-ferromagnetic-alloy bilayers.pdf","access_level":"closed","file_id":"4201","content_type":"application/pdf","success":1,"relation":"main_file"}],"abstract":[{"text":"We studied the Fulde-Ferrell-Larkin-Ovchinnikov-type state established due to the proximity effect in superconducting\r\nNb/Cu_41Ni_59 bilayers. Using a special wedge-type deposition technique, series of 20–35\r\nsamples could be fabricated by magnetron sputtering during one run. The layer thickness of only a few\r\nnanometers, the composition of the alloy, and the quality of interfaces were controlled by Rutherford backscattering\r\nspectrometry, high-resolution transmission electron microscopy, and Auger spectroscopy. The magnetic\r\nproperties of the ferromagnetic alloy layer were characterized with superconducting quantum interference\r\ndevice magnetometry. These studies yield precise information about the thickness and demonstrate the homogeneity\r\nof the alloy composition and magnetic properties along the sample series. The dependencies of the\r\ncritical temperature on the Nb and Cu41Ni59 layer thickness, T_c(d_S) and T_c(d_F), were investigated for constant\r\nthickness d_F of the magnetic alloy layer and d_S of the superconducting layer, respectively. All types of\r\nnonmonotonic behaviors of T_c versus d_F predicted by the theory could be realized experimentally, from\r\nreentrant superconducting behavior with a broad extinction region to a slight suppression of superconductivity\r\nwith a shallow minimum. Even a double extinction of superconductivity was observed, giving evidence for the\r\nmultiple reentrant behavior predicted by theory. All critical temperature curves were fitted with suitable sets of\r\nparameters. Then, T_c(d_F) diagrams of a hypothetical ferromagnet/superconductor/ferromagnet spin-switch core\r\nstructure were calculated using these parameters. Finally, superconducting spin-switch fabrication issues are\r\ndiscussed in detail in view of the achieved results.","lang":"eng"}],"publication":"Physical Review B","language":[{"iso":"eng"}],"ddc":["530"],"year":"2010","issue":"5","title":"Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers","date_created":"2018-08-28T12:22:11Z","publisher":"American Physical Society (APS)"},{"type":"journal_article","status":"public","department":[{"_id":"15"}],"user_id":"55706","_id":"4202","file_date_updated":"2018-08-28T12:28:22Z","extern":"1","article_type":"original","article_number":"023503","has_accepted_license":"1","publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","intvolume":"       107","citation":{"ama":"Zhu T, Johnston CF, Häberlen M, Kappers MJ, Oliver RA. Characterization of unintentional doping in nonpolar GaN. <i>Journal of Applied Physics</i>. 2010;107(2). doi:<a href=\"https://doi.org/10.1063/1.3284944\">10.1063/1.3284944</a>","ieee":"T. Zhu, C. F. Johnston, M. Häberlen, M. J. Kappers, and R. A. Oliver, “Characterization of unintentional doping in nonpolar GaN,” <i>Journal of Applied Physics</i>, vol. 107, no. 2, 2010.","chicago":"Zhu, Tongtong, Carol F. Johnston, Maik Häberlen, Menno J. Kappers, and Rachel A. Oliver. “Characterization of Unintentional Doping in Nonpolar GaN.” <i>Journal of Applied Physics</i> 107, no. 2 (2010). <a href=\"https://doi.org/10.1063/1.3284944\">https://doi.org/10.1063/1.3284944</a>.","short":"T. Zhu, C.F. Johnston, M. Häberlen, M.J. Kappers, R.A. Oliver, Journal of Applied Physics 107 (2010).","bibtex":"@article{Zhu_Johnston_Häberlen_Kappers_Oliver_2010, title={Characterization of unintentional doping in nonpolar GaN}, volume={107}, DOI={<a href=\"https://doi.org/10.1063/1.3284944\">10.1063/1.3284944</a>}, number={2023503}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Zhu, Tongtong and Johnston, Carol F. and Häberlen, Maik and Kappers, Menno J. and Oliver, Rachel A.}, year={2010} }","mla":"Zhu, Tongtong, et al. “Characterization of Unintentional Doping in Nonpolar GaN.” <i>Journal of Applied Physics</i>, vol. 107, no. 2, 023503, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3284944\">10.1063/1.3284944</a>.","apa":"Zhu, T., Johnston, C. F., Häberlen, M., Kappers, M. J., &#38; Oliver, R. A. (2010). Characterization of unintentional doping in nonpolar GaN. <i>Journal of Applied Physics</i>, <i>107</i>(2). <a href=\"https://doi.org/10.1063/1.3284944\">https://doi.org/10.1063/1.3284944</a>"},"volume":107,"author":[{"full_name":"Zhu, Tongtong","last_name":"Zhu","first_name":"Tongtong"},{"last_name":"Johnston","full_name":"Johnston, Carol F.","first_name":"Carol F."},{"first_name":"Maik","full_name":"Häberlen, Maik","last_name":"Häberlen"},{"first_name":"Menno J.","full_name":"Kappers, Menno J.","last_name":"Kappers"},{"first_name":"Rachel A.","last_name":"Oliver","full_name":"Oliver, Rachel A."}],"date_updated":"2022-01-06T07:00:34Z","doi":"10.1063/1.3284944","publication":"Journal of Applied Physics","file":[{"relation":"main_file","success":1,"content_type":"application/pdf","access_level":"closed","file_id":"4203","file_name":"Characterization of unintentional doping in nonpolar GaN.pdf","file_size":688753,"date_created":"2018-08-28T12:28:22Z","creator":"hclaudia","date_updated":"2018-08-28T12:28:22Z"}],"abstract":[{"lang":"eng","text":"Unintentional doping in nonpolar a-plane \u0001112¯0\u0002 gallium nitride \u0001GaN\u0002 grown on r-plane \u000111¯02\u0002\r\nsapphire using a three-dimensional \u00013D\u0002–two-dimensional \u00012D\u0002 growth method has been\r\ncharacterized. For both 2D only and 3D–2D growth, the presence of an unintentionally doped region\r\nadjacent to the GaN/sapphire interface is observed by scanning capacitance microscopy \u0001SCM\u0002. The\r\naverage width of this unintentionally doped layer is found to increase with increasing 3D growth\r\ntime. By using an intentionally doped GaN:Si staircase structure for calibration, it is shown that the\r\nunintentionally doped region has an average carrier concentration of \u00012.5\u00010.3\u0002\u00021018 cm−3. SCM\r\nalso reveals the presence of unintentionally doped features extending at 60° from the GaN/sapphire\r\ninterface. The observation of decreasing carrier concentration with distance from the GaN/sapphire\r\ninterface along these features may suggest that the unintentional doping arises from oxygen\r\ndiffusion from the sapphire substrate. Low temperature cathodoluminescence spectra reveal\r\nemission peaks at 3.41 and 3.30 eV, which are believed to originate from basal plane stacking faults\r\n\u0001BSFs\u0002 and prismatic stacking faults \u0001PSFs\u0002, respectively. It is shown that the inclined features\r\nextending from the GaN/sapphire interface exhibit both enhanced BSF and PSF emission. We\r\nsuggest that enhanced unintentional doping occurs in regions around PSFs. Where BSFs intersect\r\nthis doped material their emission is also enhanced due to reduced nonradiative recombination.\r\nTransmission electron microscopy confirms the presence of PSFs extending through the film at 60°\r\nfrom the GaN/sapphire interface."}],"language":[{"iso":"eng"}],"ddc":["530"],"issue":"2","year":"2010","date_created":"2018-08-28T12:27:34Z","publisher":"AIP Publishing","title":"Characterization of unintentional doping in nonpolar GaN"},{"author":[{"first_name":"F.","full_name":"Zirkelbach, F.","last_name":"Zirkelbach"},{"first_name":"B.","full_name":"Stritzker, B.","last_name":"Stritzker"},{"first_name":"K.","last_name":"Nordlund","full_name":"Nordlund, K."},{"full_name":"Lindner, Jörg","id":"20797","last_name":"Lindner","first_name":"Jörg"},{"first_name":"W. G.","full_name":"Schmidt, W. G.","last_name":"Schmidt"},{"full_name":"Rauls, E.","last_name":"Rauls","first_name":"E."}],"volume":82,"date_updated":"2022-01-06T07:00:35Z","doi":"10.1103/physrevb.82.094110","publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"has_accepted_license":"1","citation":{"short":"F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W.G. Schmidt, E. Rauls, Physical Review B 82 (2010).","bibtex":"@article{Zirkelbach_Stritzker_Nordlund_Lindner_Schmidt_Rauls_2010, title={Defects in carbon implanted silicon calculated by classical potentials and first-principles methods}, volume={82}, DOI={<a href=\"https://doi.org/10.1103/physrevb.82.094110\">10.1103/physrevb.82.094110</a>}, number={9094110}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Lindner, Jörg and Schmidt, W. G. and Rauls, E.}, year={2010} }","mla":"Zirkelbach, F., et al. “Defects in Carbon Implanted Silicon Calculated by Classical Potentials and First-Principles Methods.” <i>Physical Review B</i>, vol. 82, no. 9, 094110, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.82.094110\">10.1103/physrevb.82.094110</a>.","apa":"Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J., Schmidt, W. G., &#38; Rauls, E. (2010). Defects in carbon implanted silicon calculated by classical potentials and first-principles methods. <i>Physical Review B</i>, <i>82</i>(9). <a href=\"https://doi.org/10.1103/physrevb.82.094110\">https://doi.org/10.1103/physrevb.82.094110</a>","ieee":"F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W. G. Schmidt, and E. Rauls, “Defects in carbon implanted silicon calculated by classical potentials and first-principles methods,” <i>Physical Review B</i>, vol. 82, no. 9, 2010.","chicago":"Zirkelbach, F., B. Stritzker, K. Nordlund, Jörg Lindner, W. G. Schmidt, and E. Rauls. “Defects in Carbon Implanted Silicon Calculated by Classical Potentials and First-Principles Methods.” <i>Physical Review B</i> 82, no. 9 (2010). <a href=\"https://doi.org/10.1103/physrevb.82.094110\">https://doi.org/10.1103/physrevb.82.094110</a>.","ama":"Zirkelbach F, Stritzker B, Nordlund K, Lindner J, Schmidt WG, Rauls E. Defects in carbon implanted silicon calculated by classical potentials and first-principles methods. <i>Physical Review B</i>. 2010;82(9). doi:<a href=\"https://doi.org/10.1103/physrevb.82.094110\">10.1103/physrevb.82.094110</a>"},"intvolume":"        82","user_id":"55706","department":[{"_id":"15"},{"_id":"286"}],"_id":"4204","file_date_updated":"2018-08-28T12:31:01Z","article_number":"094110","article_type":"original","type":"journal_article","status":"public","date_created":"2018-08-28T12:30:15Z","publisher":"American Physical Society (APS)","title":"Defects in carbon implanted silicon calculated by classical potentials and first-principles methods","issue":"9","year":"2010","language":[{"iso":"eng"}],"ddc":["530"],"publication":"Physical Review B","file":[{"date_updated":"2018-08-28T12:31:01Z","creator":"hclaudia","date_created":"2018-08-28T12:31:01Z","file_size":238023,"file_id":"4205","access_level":"closed","file_name":"Defects in Carbon implanted Silicon calculated by classical potentials and first principles methods.pdf","content_type":"application/pdf","success":1,"relation":"main_file"}],"abstract":[{"lang":"eng","text":"A comparative theoretical investigation of carbon interstitials in silicon is presented. Calculations using\r\nclassical potentials are compared to first-principles density-functional theory calculations of the geometries,\r\nformation, and activation energies of the carbon dumbbell interstitial, showing the importance of a quantummechanical\r\ndescription of this system. In contrast to previous studies, the present first-principles calculations of\r\nthe interstitial carbon migration path yield an activation energy that excellently matches the experiment. The\r\nbond-centered interstitial configuration shows a net magnetization of two electrons, illustrating the need for\r\nspin-polarized calculations."}]},{"conference":{"name":"Guest Lectures at Departamento de Fisica Applicada, Master de Materiales Avanzados y Nanotecnologias ","start_date":"2010-04-14","end_date":"2010-04-16","location":"Universidad Autónoma de Madrid (Spain)"},"title":"Advanced topics and applications of Transmission Electron Microscopy, Part I-II","author":[{"last_name":"Lindner","id":"20797","full_name":"Lindner, Jörg","first_name":"Jörg"}],"date_created":"2018-08-28T12:34:11Z","date_updated":"2022-01-06T07:00:35Z","citation":{"ieee":"J. Lindner, “Advanced topics and applications of Transmission Electron Microscopy, Part I-II,” presented at the Guest Lectures at Departamento de Fisica Applicada, Master de Materiales Avanzados y Nanotecnologias , Universidad Autónoma de Madrid (Spain), 2010.","chicago":"Lindner, Jörg. “Advanced Topics and Applications of Transmission Electron Microscopy, Part I-II,” 2010.","ama":"Lindner J. Advanced topics and applications of Transmission Electron Microscopy, Part I-II. In: ; 2010.","apa":"Lindner, J. (2010). Advanced topics and applications of Transmission Electron Microscopy, Part I-II. Presented at the Guest Lectures at Departamento de Fisica Applicada, Master de Materiales Avanzados y Nanotecnologias , Universidad Autónoma de Madrid (Spain).","mla":"Lindner, Jörg. <i>Advanced Topics and Applications of Transmission Electron Microscopy, Part I-II</i>. 2010.","bibtex":"@inproceedings{Lindner_2010, title={Advanced topics and applications of Transmission Electron Microscopy, Part I-II}, author={Lindner, Jörg}, year={2010} }","short":"J. Lindner, in: 2010."},"year":"2010","department":[{"_id":"15"},{"_id":"286"}],"user_id":"55706","_id":"4206","status":"public","type":"conference_abstract"},{"year":"2010","intvolume":"      1181","citation":{"ama":"Ila D, Kishimoto N, Lindner J, Baglin J, eds. <i>Ion Beams and Nano-Engineering</i>. Vol 1181. MRS Symposium Proceedings ; 2010.","chicago":"Ila, D., N.  Kishimoto, Jörg Lindner, and J. Baglin, eds. <i>Ion Beams and Nano-Engineering</i>. Vol. 1181. MRS Symposium Proceedings , 2010.","ieee":"D. Ila, N. Kishimoto, J. Lindner, and J. Baglin, Eds., <i>Ion Beams and Nano-Engineering</i>, vol. 1181. MRS Symposium Proceedings , 2010.","apa":"Ila, D., Kishimoto, N., Lindner, J., &#38; Baglin, J. (Eds.). (2010). <i>Ion Beams and Nano-Engineering</i> (Vol. 1181). Presented at the MRS Spring Meeting 2009, San Francisco (USA): MRS Symposium Proceedings .","mla":"Ila, D., et al., editors. <i>Ion Beams and Nano-Engineering</i>. Vol. 1181, MRS Symposium Proceedings , 2010.","bibtex":"@book{Ila_Kishimoto_Lindner_Baglin_2010, title={Ion Beams and Nano-Engineering}, volume={1181}, publisher={MRS Symposium Proceedings }, year={2010} }","short":"D. Ila, N. Kishimoto, J. Lindner, J. Baglin, eds., Ion Beams and Nano-Engineering, MRS Symposium Proceedings , 2010."},"publication_identifier":{"isbn":["978-1-60511-154-4"]},"publication_status":"published","title":"Ion Beams and Nano-Engineering","conference":{"name":"MRS Spring Meeting 2009","location":"San Francisco (USA)"},"publisher":"MRS Symposium Proceedings ","date_updated":"2022-01-06T07:00:35Z","volume":1181,"date_created":"2018-08-28T12:38:16Z","editor":[{"first_name":"D.","last_name":"Ila","full_name":"Ila, D."},{"full_name":"Kishimoto, N. ","last_name":"Kishimoto","first_name":"N. "},{"first_name":"Jörg","id":"20797","full_name":"Lindner, Jörg","last_name":"Lindner"},{"full_name":"Baglin, J.","last_name":"Baglin","first_name":"J."}],"status":"public","type":"book_editor","language":[{"iso":"eng"}],"_id":"4207","department":[{"_id":"15"},{"_id":"286"}],"user_id":"55706"},{"abstract":[{"lang":"eng","text":"Growth of GaN on Si(111) potentially enables cost efficient manufacturing of optoelectronic devices due to the possibility of using cheap large area substrates. However, GaN layers grown on Si(111) substrates suffer from high tensile stress that can lead to cracking at layer thicknesses exceeding 1 μm. Another challenge is the high dislocation density of GaN layers grown on Si(111) which is detrimental to device performance. In this paper we show that a step graded AlGaN buffer layer can compensate tensile stress, avoiding cracking, and at the same time reduce the dislocation density. An additional SiNx interlayer in the GaN layer is shown to further reduce the dislocation density down to the high 108 /cm². Weak beam dark field TEM was used to study the dislocation reduction in cross sectional samples and for comparison of the step graded AlGaN buffer layer structure to a continuously graded one. STEM ADF was used to determine the exact location of dislocation bending with respect to the position of the interface."}],"file":[{"file_name":"Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNx and AlGaN layers.pdf","file_id":"4209","access_level":"closed","file_size":13011359,"creator":"hclaudia","date_created":"2018-08-28T12:40:20Z","date_updated":"2018-08-28T12:40:20Z","relation":"main_file","success":1,"content_type":"application/pdf"}],"publication":"Journal of Physics: Conference Series","ddc":["530"],"language":[{"iso":"eng"}],"year":"2010","title":"Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers","publisher":"IOP Publishing","date_created":"2018-08-28T12:39:31Z","status":"public","type":"journal_article","article_type":"original","article_number":"012017","file_date_updated":"2018-08-28T12:40:20Z","_id":"4208","department":[{"_id":"15"}],"user_id":"55706","intvolume":"       209","citation":{"apa":"Häberlen, M., Zhu, D., McAleese, C., Kappers, M. J., &#38; Humphreys, C. J. (2010). Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers. <i>Journal of Physics: Conference Series</i>, <i>209</i>. <a href=\"https://doi.org/10.1088/1742-6596/209/1/012017\">https://doi.org/10.1088/1742-6596/209/1/012017</a>","mla":"Häberlen, M., et al. “Dislocation Reduction in MOVPE Grown GaN Layers on (111)Si Using SiNxand AlGaN Layers.” <i>Journal of Physics: Conference Series</i>, vol. 209, 012017, IOP Publishing, 2010, doi:<a href=\"https://doi.org/10.1088/1742-6596/209/1/012017\">10.1088/1742-6596/209/1/012017</a>.","bibtex":"@article{Häberlen_Zhu_McAleese_Kappers_Humphreys_2010, title={Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers}, volume={209}, DOI={<a href=\"https://doi.org/10.1088/1742-6596/209/1/012017\">10.1088/1742-6596/209/1/012017</a>}, number={012017}, journal={Journal of Physics: Conference Series}, publisher={IOP Publishing}, author={Häberlen, M and Zhu, D and McAleese, C and Kappers, M J and Humphreys, C J}, year={2010} }","short":"M. Häberlen, D. Zhu, C. McAleese, M.J. Kappers, C.J. Humphreys, Journal of Physics: Conference Series 209 (2010).","ama":"Häberlen M, Zhu D, McAleese C, Kappers MJ, Humphreys CJ. Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers. <i>Journal of Physics: Conference Series</i>. 2010;209. doi:<a href=\"https://doi.org/10.1088/1742-6596/209/1/012017\">10.1088/1742-6596/209/1/012017</a>","ieee":"M. Häberlen, D. Zhu, C. McAleese, M. J. Kappers, and C. J. Humphreys, “Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers,” <i>Journal of Physics: Conference Series</i>, vol. 209, 2010.","chicago":"Häberlen, M, D Zhu, C McAleese, M J Kappers, and C J Humphreys. “Dislocation Reduction in MOVPE Grown GaN Layers on (111)Si Using SiNxand AlGaN Layers.” <i>Journal of Physics: Conference Series</i> 209 (2010). <a href=\"https://doi.org/10.1088/1742-6596/209/1/012017\">https://doi.org/10.1088/1742-6596/209/1/012017</a>."},"has_accepted_license":"1","publication_identifier":{"issn":["1742-6596"]},"publication_status":"published","doi":"10.1088/1742-6596/209/1/012017","date_updated":"2022-01-06T07:00:36Z","volume":209,"author":[{"first_name":"M","last_name":"Häberlen","full_name":"Häberlen, M"},{"last_name":"Zhu","full_name":"Zhu, D","first_name":"D"},{"last_name":"McAleese","full_name":"McAleese, C","first_name":"C"},{"first_name":"M J","last_name":"Kappers","full_name":"Kappers, M J"},{"full_name":"Humphreys, C J","last_name":"Humphreys","first_name":"C J"}]},{"article_type":"original","file_date_updated":"2018-08-28T12:43:31Z","_id":"4210","department":[{"_id":"15"}],"user_id":"55706","status":"public","type":"journal_article","doi":"10.1002/pssb.200983537","date_updated":"2022-01-06T07:00:36Z","volume":247,"author":[{"full_name":"Häberlen, Maik","last_name":"Häberlen","first_name":"Maik"},{"full_name":"Zhu, Dandan","last_name":"Zhu","first_name":"Dandan"},{"first_name":"Clifford","last_name":"McAleese","full_name":"McAleese, Clifford"},{"full_name":"Zhu, Tongtong","last_name":"Zhu","first_name":"Tongtong"},{"last_name":"Kappers","full_name":"Kappers, Menno J.","first_name":"Menno J."},{"first_name":"Colin J.","last_name":"Humphreys","full_name":"Humphreys, Colin J."}],"page":"1753-1756","intvolume":"       247","citation":{"mla":"Häberlen, Maik, et al. “Dislocation Reduction in GaN Grown on Si(111) Using a Strain-Driven 3D GaN Interlayer.” <i>Physica Status Solidi (B)</i>, vol. 247, no. 7, Wiley, 2010, pp. 1753–56, doi:<a href=\"https://doi.org/10.1002/pssb.200983537\">10.1002/pssb.200983537</a>.","short":"M. Häberlen, D. Zhu, C. McAleese, T. Zhu, M.J. Kappers, C.J. Humphreys, Physica Status Solidi (B) 247 (2010) 1753–1756.","bibtex":"@article{Häberlen_Zhu_McAleese_Zhu_Kappers_Humphreys_2010, title={Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer}, volume={247}, DOI={<a href=\"https://doi.org/10.1002/pssb.200983537\">10.1002/pssb.200983537</a>}, number={7}, journal={physica status solidi (b)}, publisher={Wiley}, author={Häberlen, Maik and Zhu, Dandan and McAleese, Clifford and Zhu, Tongtong and Kappers, Menno J. and Humphreys, Colin J.}, year={2010}, pages={1753–1756} }","apa":"Häberlen, M., Zhu, D., McAleese, C., Zhu, T., Kappers, M. J., &#38; Humphreys, C. J. (2010). Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer. <i>Physica Status Solidi (B)</i>, <i>247</i>(7), 1753–1756. <a href=\"https://doi.org/10.1002/pssb.200983537\">https://doi.org/10.1002/pssb.200983537</a>","ieee":"M. Häberlen, D. Zhu, C. McAleese, T. Zhu, M. J. Kappers, and C. J. Humphreys, “Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer,” <i>physica status solidi (b)</i>, vol. 247, no. 7, pp. 1753–1756, 2010.","chicago":"Häberlen, Maik, Dandan Zhu, Clifford McAleese, Tongtong Zhu, Menno J. Kappers, and Colin J. Humphreys. “Dislocation Reduction in GaN Grown on Si(111) Using a Strain-Driven 3D GaN Interlayer.” <i>Physica Status Solidi (B)</i> 247, no. 7 (2010): 1753–56. <a href=\"https://doi.org/10.1002/pssb.200983537\">https://doi.org/10.1002/pssb.200983537</a>.","ama":"Häberlen M, Zhu D, McAleese C, Zhu T, Kappers MJ, Humphreys CJ. Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer. <i>physica status solidi (b)</i>. 2010;247(7):1753-1756. doi:<a href=\"https://doi.org/10.1002/pssb.200983537\">10.1002/pssb.200983537</a>"},"publication_identifier":{"issn":["0370-1972","1521-3951"]},"has_accepted_license":"1","publication_status":"published","ddc":["530"],"language":[{"iso":"eng"}],"abstract":[{"lang":"eng","text":"In this paper we demonstrate a strain-driven GaN interlayer method to reduce dislocation densities in GaN grown on (111) oriented silicon by metal organic vapour phase epitaxy (MOVPE). In order to achieve crack-free GaN layers of\r\nreasonable thicknesses and dislocation densities it is crucial to integrate both dislocation reduction and strain management layers. In contrast to techniques like FACELO or nanoELO we show the in situ formation of GaN islands directly on the AlN nucleation layer without the need to deposit a SiO2 or SiNx mask. A graded AlGaN layer for strain management can be grown on top of this dislocation reducing 3D GaN inter-layer in order to achieve crack-free GaN layers grown on top of the AlGaN strain management layer. Furthermore, an additional SiNx layer for subsequent dislocation reduction can also be incorporated into the structure and is shown to efficiently reduce the dislocation density down to the low 10^9 cm^2. The structural properties of the 3D GaN island buffer layer and overgrown\r\nsamples are studied by means of SEM, cross-sectional, and plan view TEM. Cathodoluminiscence in an SEM is employed to correlate the dislocation microstructure as observed by plan view TEM with luminescent properties."}],"file":[{"date_updated":"2018-08-28T12:43:31Z","creator":"hclaudia","date_created":"2018-08-28T12:43:31Z","file_size":911931,"file_id":"4211","file_name":"Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer.pdf","access_level":"closed","content_type":"application/pdf","success":1,"relation":"main_file"}],"publication":"physica status solidi (b)","title":"Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer","publisher":"Wiley","date_created":"2018-08-28T12:42:58Z","year":"2010","issue":"7"},{"file":[{"file_size":2391054,"file_id":"4213","access_level":"closed","file_name":"Low temperature photoluminescence and cathodoluminescence studies of non-polar GaN grown using epitaxial lateral overgrowth.pdf","date_updated":"2018-08-28T12:47:23Z","creator":"hclaudia","date_created":"2018-08-28T12:47:23Z","success":1,"relation":"main_file","content_type":"application/pdf"}],"abstract":[{"text":"Low temperature cathodo- and photoluminescence has been performed on nonpolar a-plane GaN films grown using epitaxial lateral overgrowth. In films overgrown at a low V–III ratio, the emission spectrum is dominated by “yellow” and “blue” luminescence bands, attributed to recombination at point defects or impurities. The intensity of this emission is observed to decrease steadily across the window region along the −c direction, possibly due to asymmetric diffusion of a point defect/impurity species. When overgrown at a higher V–III ratio, the near band edge and basal-plane stacking fault emission intensity increases by orders of magnitude and a donor–acceptor pair band is observed. Using monochromatic cathodoluminescence imaging, the various emission features are correlated with the microstructure of the film. In particular, the peak energy of the basal-plane stacking fault emission is seen to be blueshifted by \u000415 meV in the wing relative to the window region, which may be related to the different strain states in the respective regions.","lang":"eng"}],"publication":"Journal of Applied Physics","language":[{"iso":"eng"}],"ddc":["530"],"year":"2010","issue":"3","title":"Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth","date_created":"2018-08-28T12:46:49Z","publisher":"AIP Publishing","status":"public","type":"journal_article","file_date_updated":"2018-08-28T12:47:23Z","article_type":"original","article_number":"033523","department":[{"_id":"15"}],"user_id":"55706","_id":"4212","intvolume":"       108","citation":{"short":"M. Häberlen, T.J. Badcock, M.A. Moram, J.L. Hollander, M.J. Kappers, P. Dawson, C.J. Humphreys, R.A. Oliver, Journal of Applied Physics 108 (2010).","bibtex":"@article{Häberlen_Badcock_Moram_Hollander_Kappers_Dawson_Humphreys_Oliver_2010, title={Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth}, volume={108}, DOI={<a href=\"https://doi.org/10.1063/1.3460641\">10.1063/1.3460641</a>}, number={3033523}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Häberlen, M. and Badcock, T. J. and Moram, M. A. and Hollander, J. L. and Kappers, M. J. and Dawson, P. and Humphreys, C. J. and Oliver, R. A.}, year={2010} }","mla":"Häberlen, M., et al. “Low Temperature Photoluminescence and Cathodoluminescence Studies of Nonpolar GaN Grown Using Epitaxial Lateral Overgrowth.” <i>Journal of Applied Physics</i>, vol. 108, no. 3, 033523, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3460641\">10.1063/1.3460641</a>.","apa":"Häberlen, M., Badcock, T. J., Moram, M. A., Hollander, J. L., Kappers, M. J., Dawson, P., … Oliver, R. A. (2010). Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth. <i>Journal of Applied Physics</i>, <i>108</i>(3). <a href=\"https://doi.org/10.1063/1.3460641\">https://doi.org/10.1063/1.3460641</a>","ama":"Häberlen M, Badcock TJ, Moram MA, et al. Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth. <i>Journal of Applied Physics</i>. 2010;108(3). doi:<a href=\"https://doi.org/10.1063/1.3460641\">10.1063/1.3460641</a>","ieee":"M. Häberlen <i>et al.</i>, “Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth,” <i>Journal of Applied Physics</i>, vol. 108, no. 3, 2010.","chicago":"Häberlen, M., T. J. Badcock, M. A. Moram, J. L. Hollander, M. J. Kappers, P. Dawson, C. J. Humphreys, and R. A. Oliver. “Low Temperature Photoluminescence and Cathodoluminescence Studies of Nonpolar GaN Grown Using Epitaxial Lateral Overgrowth.” <i>Journal of Applied Physics</i> 108, no. 3 (2010). <a href=\"https://doi.org/10.1063/1.3460641\">https://doi.org/10.1063/1.3460641</a>."},"publication_identifier":{"issn":["0021-8979","1089-7550"]},"has_accepted_license":"1","publication_status":"published","doi":"10.1063/1.3460641","volume":108,"author":[{"first_name":"M.","full_name":"Häberlen, M.","last_name":"Häberlen"},{"full_name":"Badcock, T. J.","last_name":"Badcock","first_name":"T. J."},{"full_name":"Moram, M. A.","last_name":"Moram","first_name":"M. A."},{"last_name":"Hollander","full_name":"Hollander, J. L.","first_name":"J. L."},{"last_name":"Kappers","full_name":"Kappers, M. J.","first_name":"M. J."},{"last_name":"Dawson","full_name":"Dawson, P.","first_name":"P."},{"first_name":"C. J.","full_name":"Humphreys, C. J.","last_name":"Humphreys"},{"full_name":"Oliver, R. A.","last_name":"Oliver","first_name":"R. A."}],"date_updated":"2022-01-06T07:00:37Z"},{"issue":"23","year":"2010","date_created":"2018-08-28T12:49:39Z","publisher":"Elsevier BV","title":"The effects of annealing on non-polar (112¯0) a-plane GaN films","publication":"Journal of Crystal Growth","file":[{"content_type":"application/pdf","success":1,"relation":"main_file","date_updated":"2018-08-28T12:50:07Z","date_created":"2018-08-28T12:50:07Z","creator":"hclaudia","file_size":1218752,"access_level":"closed","file_id":"4215","file_name":"The effects of annealing on non-polar (11-20) a-plane GaN films.pdf"}],"abstract":[{"text":"Non-polar a -plane (1 1 2 ̄ 0) GaN films were grown on r-plane sapphire by metal–organic vapor phase epitaxy and were subsequently annealed for 90 min at 1070°C. Most dislocations were partial\r\ndislocations, which terminated basal plane stacking faults. Prior to annealing, these dislocations were\r\nrandomly distributed. After annealing, these dislocations moved into arrays oriented along the [0 0 0 1]\r\ndirection and aligned perpendicular to the film–substrate interface throughout their length, although\r\nthe total dislocation density remained unchanged. These changes were accompanied by broadening of\r\nthe symmetric X-ray diffraction 1 1 2 ̄ 0 w-scan widths. The mechanism of movement was identified as\r\ndislocation glide, occurring due to highly anisotropic stresses (confirmed by X-ray diffraction lattice\r\nparameter measurements) and evidenced by macroscopic slip bands observed on the sample surface.\r\nThere was also an increase in the density of unintentionally n-type doped electrically conductive\r\ninclined features present at the film–substrate interface (as observed in cross-section using scanning\r\ncapacitance microscopy), suggesting out-diffusion of impurities from the substrate along with prismatic\r\nstacking faults. These data suggest that annealing processes performed close to film growth\r\ntemperatures can affect both the microstructure and the electrical properties of non-polar GaN films.","lang":"eng"}],"language":[{"iso":"eng"}],"ddc":["530"],"publication_status":"published","has_accepted_license":"1","publication_identifier":{"issn":["0022-0248"]},"citation":{"ama":"Hao R, Zhu T, Häberlen M, et al. The effects of annealing on non-polar (112¯0) a-plane GaN films. <i>Journal of Crystal Growth</i>. 2010;312(23):3536-3543. doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2010.08.041\">10.1016/j.jcrysgro.2010.08.041</a>","chicago":"Hao, Rui, T. Zhu, M. Häberlen, T.Y. Chang, M.J. Kappers, R.A. Oliver, C.J. Humphreys, and M.A. Moram. “The Effects of Annealing on Non-Polar (112¯0) a-Plane GaN Films.” <i>Journal of Crystal Growth</i> 312, no. 23 (2010): 3536–43. <a href=\"https://doi.org/10.1016/j.jcrysgro.2010.08.041\">https://doi.org/10.1016/j.jcrysgro.2010.08.041</a>.","ieee":"R. Hao <i>et al.</i>, “The effects of annealing on non-polar (112¯0) a-plane GaN films,” <i>Journal of Crystal Growth</i>, vol. 312, no. 23, pp. 3536–3543, 2010.","mla":"Hao, Rui, et al. “The Effects of Annealing on Non-Polar (112¯0) a-Plane GaN Films.” <i>Journal of Crystal Growth</i>, vol. 312, no. 23, Elsevier BV, 2010, pp. 3536–43, doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2010.08.041\">10.1016/j.jcrysgro.2010.08.041</a>.","short":"R. Hao, T. Zhu, M. Häberlen, T.Y. Chang, M.J. Kappers, R.A. Oliver, C.J. Humphreys, M.A. Moram, Journal of Crystal Growth 312 (2010) 3536–3543.","bibtex":"@article{Hao_Zhu_Häberlen_Chang_Kappers_Oliver_Humphreys_Moram_2010, title={The effects of annealing on non-polar (112¯0) a-plane GaN films}, volume={312}, DOI={<a href=\"https://doi.org/10.1016/j.jcrysgro.2010.08.041\">10.1016/j.jcrysgro.2010.08.041</a>}, number={23}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Hao, Rui and Zhu, T. and Häberlen, M. and Chang, T.Y. and Kappers, M.J. and Oliver, R.A. and Humphreys, C.J. and Moram, M.A.}, year={2010}, pages={3536–3543} }","apa":"Hao, R., Zhu, T., Häberlen, M., Chang, T. Y., Kappers, M. J., Oliver, R. A., … Moram, M. A. (2010). The effects of annealing on non-polar (112¯0) a-plane GaN films. <i>Journal of Crystal Growth</i>, <i>312</i>(23), 3536–3543. <a href=\"https://doi.org/10.1016/j.jcrysgro.2010.08.041\">https://doi.org/10.1016/j.jcrysgro.2010.08.041</a>"},"intvolume":"       312","page":"3536-3543","author":[{"last_name":"Hao","full_name":"Hao, Rui","first_name":"Rui"},{"last_name":"Zhu","full_name":"Zhu, T.","first_name":"T."},{"last_name":"Häberlen","full_name":"Häberlen, M.","first_name":"M."},{"full_name":"Chang, T.Y.","last_name":"Chang","first_name":"T.Y."},{"last_name":"Kappers","full_name":"Kappers, M.J.","first_name":"M.J."},{"last_name":"Oliver","full_name":"Oliver, R.A.","first_name":"R.A."},{"first_name":"C.J.","full_name":"Humphreys, C.J.","last_name":"Humphreys"},{"last_name":"Moram","full_name":"Moram, M.A.","first_name":"M.A."}],"volume":312,"date_updated":"2022-01-06T07:00:37Z","doi":"10.1016/j.jcrysgro.2010.08.041","type":"journal_article","status":"public","user_id":"55706","department":[{"_id":"15"}],"_id":"4214","file_date_updated":"2018-08-28T12:50:07Z","article_type":"original"},{"title":"Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC","date_created":"2018-08-28T12:53:50Z","publisher":"Trans Tech Publications","year":"2010","language":[{"iso":"eng"}],"ddc":["530"],"file":[{"creator":"hclaudia","date_created":"2018-08-28T12:54:26Z","date_updated":"2018-08-28T12:54:26Z","file_name":"Fine structure of triplet centers in room temperature irradiated 6H-SiC.pdf","access_level":"closed","file_id":"4217","file_size":583484,"content_type":"application/pdf","relation":"main_file","success":1}],"abstract":[{"text":"In non-annealed 6H-SiC samples that were electron irradiated at room temperature, a new\r\nEPR signal due to a S=1 defect center with exceptionally large zero-field splitting (D = +652·10-4\r\ncm-1) has been observed under illumination. A positive sign of D demonstrates that the spin-orbit\r\ncontribution to the zero-field splitting exceeds by far that of the spin-spin interaction. A principal\r\naxis of the fine structure tilted by 59° against the crystal c-axis as well as the exceptionally high\r\nzero-field splitting D can be qualitatively understood by the occurrence of additional close-lying\r\ndefect levels in defect clusters resulting in comparatively large second-order spin-orbit coupling. A\r\ntentative assignment to vacancy clusters is supported by the observed annealing behavior.","lang":"eng"}],"publication":"Materials Science Forum","doi":"10.4028/www.scientific.net/msf.645-648.403","volume":"645-648","author":[{"first_name":"Andreas","full_name":"Scholle, Andreas","last_name":"Scholle"},{"last_name":"Greulich-Weber","full_name":"Greulich-Weber, Siegmund","first_name":"Siegmund"},{"last_name":"Rauls","full_name":"Rauls, Eva","first_name":"Eva"},{"first_name":"Wolf Gero","last_name":"Schmidt","full_name":"Schmidt, Wolf Gero"},{"last_name":"Gerstmann","full_name":"Gerstmann, Uwe","first_name":"Uwe"}],"date_updated":"2022-01-06T07:00:38Z","page":"403-406","citation":{"ama":"Scholle A, Greulich-Weber S, Rauls E, Schmidt WG, Gerstmann U. Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC. <i>Materials Science Forum</i>. 2010;645-648:403-406. doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.645-648.403\">10.4028/www.scientific.net/msf.645-648.403</a>","chicago":"Scholle, Andreas, Siegmund Greulich-Weber, Eva Rauls, Wolf Gero Schmidt, and Uwe Gerstmann. “Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC.” <i>Materials Science Forum</i> 645–648 (2010): 403–6. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.645-648.403\">https://doi.org/10.4028/www.scientific.net/msf.645-648.403</a>.","ieee":"A. Scholle, S. Greulich-Weber, E. Rauls, W. G. Schmidt, and U. Gerstmann, “Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC,” <i>Materials Science Forum</i>, vol. 645–648, pp. 403–406, 2010.","mla":"Scholle, Andreas, et al. “Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC.” <i>Materials Science Forum</i>, vol. 645–648, Trans Tech Publications, 2010, pp. 403–06, doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.645-648.403\">10.4028/www.scientific.net/msf.645-648.403</a>.","bibtex":"@article{Scholle_Greulich-Weber_Rauls_Schmidt_Gerstmann_2010, title={Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC}, volume={645–648}, DOI={<a href=\"https://doi.org/10.4028/www.scientific.net/msf.645-648.403\">10.4028/www.scientific.net/msf.645-648.403</a>}, journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Scholle, Andreas and Greulich-Weber, Siegmund and Rauls, Eva and Schmidt, Wolf Gero and Gerstmann, Uwe}, year={2010}, pages={403–406} }","short":"A. Scholle, S. Greulich-Weber, E. Rauls, W.G. Schmidt, U. Gerstmann, Materials Science Forum 645–648 (2010) 403–406.","apa":"Scholle, A., Greulich-Weber, S., Rauls, E., Schmidt, W. G., &#38; Gerstmann, U. (2010). Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC. <i>Materials Science Forum</i>, <i>645</i>–<i>648</i>, 403–406. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.645-648.403\">https://doi.org/10.4028/www.scientific.net/msf.645-648.403</a>"},"has_accepted_license":"1","publication_identifier":{"issn":["1662-9752"]},"publication_status":"published","file_date_updated":"2018-08-28T12:54:26Z","article_type":"original","department":[{"_id":"15"}],"user_id":"55706","_id":"4216","status":"public","type":"journal_article"},{"intvolume":"        82","page":"251-258","citation":{"ama":"Warnecke H-J, Bothe D, Zrenner A, Berth G, Hüsch K-P. Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*. <i>Chemie Ingenieur Technik</i>. 2010;82(3):251-258. doi:<a href=\"https://doi.org/10.1002/cite.200900169\">10.1002/cite.200900169</a>","chicago":"Warnecke, H.-J., D. Bothe, Artur Zrenner, Gerhard Berth, and K.-P. Hüsch. “Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*.” <i>Chemie Ingenieur Technik</i> 82, no. 3 (2010): 251–58. <a href=\"https://doi.org/10.1002/cite.200900169\">https://doi.org/10.1002/cite.200900169</a>.","ieee":"H.-J. Warnecke, D. Bothe, A. Zrenner, G. Berth, and K.-P. Hüsch, “Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*,” <i>Chemie Ingenieur Technik</i>, vol. 82, no. 3, pp. 251–258, 2010.","apa":"Warnecke, H.-J., Bothe, D., Zrenner, A., Berth, G., &#38; Hüsch, K.-P. (2010). Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*. <i>Chemie Ingenieur Technik</i>, <i>82</i>(3), 251–258. <a href=\"https://doi.org/10.1002/cite.200900169\">https://doi.org/10.1002/cite.200900169</a>","mla":"Warnecke, H. J., et al. “Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*.” <i>Chemie Ingenieur Technik</i>, vol. 82, no. 3, Wiley, 2010, pp. 251–58, doi:<a href=\"https://doi.org/10.1002/cite.200900169\">10.1002/cite.200900169</a>.","bibtex":"@article{Warnecke_Bothe_Zrenner_Berth_Hüsch_2010, title={Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*}, volume={82}, DOI={<a href=\"https://doi.org/10.1002/cite.200900169\">10.1002/cite.200900169</a>}, number={3}, journal={Chemie Ingenieur Technik}, publisher={Wiley}, author={Warnecke, H.-J. and Bothe, D. and Zrenner, Artur and Berth, Gerhard and Hüsch, K.-P.}, year={2010}, pages={251–258} }","short":"H.-J. Warnecke, D. Bothe, A. Zrenner, G. Berth, K.-P. Hüsch, Chemie Ingenieur Technik 82 (2010) 251–258."},"year":"2010","issue":"3","publication_identifier":{"issn":["0009-286X","1522-2640"]},"publication_status":"published","doi":"10.1002/cite.200900169","title":"Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*","volume":82,"author":[{"first_name":"H.-J.","full_name":"Warnecke, H.-J.","last_name":"Warnecke"},{"first_name":"D.","full_name":"Bothe, D.","last_name":"Bothe"},{"full_name":"Zrenner, Artur","id":"606","orcid":"0000-0002-5190-0944","last_name":"Zrenner","first_name":"Artur"},{"last_name":"Berth","id":"53","full_name":"Berth, Gerhard","first_name":"Gerhard"},{"first_name":"K.-P.","last_name":"Hüsch","full_name":"Hüsch, K.-P."}],"date_created":"2019-01-10T10:13:09Z","date_updated":"2022-01-06T07:03:13Z","publisher":"Wiley","status":"public","abstract":[{"lang":"ger","text":"Strömungsbasierte Mischprozesse sind grundlegender Bestandteil vieler chemischer Prozesse. Realisierbare Mischzeiten reichen von einigen Millisekunden bis zu Sekunden, wobei die vollständige Homogenisierung oft nicht sichergestellt ist. Werden kinetische Parameter chemischer Reaktionen dieses Zeitskalenbereichs ohne Berücksichtigung der Mischprozesse bestimmt, sind sie mischungsmaskiert und geben die inhärente chemische Kinetik nicht wieder. In dieser Arbeit wird die Validierung und Anwendung einer Methode zur Bestimmung inhärenter chemischer Kinetiken von in Flüssigphase ablaufenden chemischen Reaktionen im stationären, laminaren Flachbettmikroreaktor vorgestellt. Der verfolgte Ansatz basiert auf der mechanistischen Modellierung der Molmengen unter Berücksichtigung von Konvektion, Diffusion und Reaktion und der Bestimmung der unbekannten Parameter durch Anpassung des Modells an experimentell ermittelte Konzentrationsverläufe."}],"publication":"Chemie Ingenieur Technik","type":"journal_article","language":[{"iso":"ger"}],"article_type":"original","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"user_id":"49428","_id":"6619"},{"publication_status":"published","publication_identifier":{"issn":["1386-9477"]},"issue":"10","year":"2010","citation":{"ama":"Piegdon KA, Offer M, Lorke A, et al. Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2010;42(10):2552-2555. doi:<a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">10.1016/j.physe.2009.12.051</a>","chicago":"Piegdon, Karoline A., Matthias Offer, Axel Lorke, Martin Urbanski, Andreas Hoischen, Heinz-Siegfried Kitzerow, Stefan Declair, et al. “Self-Assembled Quantum Dots in a Liquid-Crystal-Tunable Microdisk Resonator.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i> 42, no. 10 (2010): 2552–55. <a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">https://doi.org/10.1016/j.physe.2009.12.051</a>.","ieee":"K. A. Piegdon <i>et al.</i>, “Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, vol. 42, no. 10, pp. 2552–2555, 2010, doi: <a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">10.1016/j.physe.2009.12.051</a>.","apa":"Piegdon, K. A., Offer, M., Lorke, A., Urbanski, M., Hoischen, A., Kitzerow, H.-S., Declair, S., Förstner, J., Meier, T., Reuter, D., Wieck, A. D., &#38; Meier, C. (2010). Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, <i>42</i>(10), 2552–2555. <a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">https://doi.org/10.1016/j.physe.2009.12.051</a>","short":"K.A. Piegdon, M. Offer, A. Lorke, M. Urbanski, A. Hoischen, H.-S. Kitzerow, S. Declair, J. Förstner, T. Meier, D. Reuter, A.D. Wieck, C. Meier, Physica E: Low-Dimensional Systems and Nanostructures 42 (2010) 2552–2555.","mla":"Piegdon, Karoline A., et al. “Self-Assembled Quantum Dots in a Liquid-Crystal-Tunable Microdisk Resonator.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, vol. 42, no. 10, Elsevier BV, 2010, pp. 2552–55, doi:<a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">10.1016/j.physe.2009.12.051</a>.","bibtex":"@article{Piegdon_Offer_Lorke_Urbanski_Hoischen_Kitzerow_Declair_Förstner_Meier_Reuter_et al._2010, title={Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator}, volume={42}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">10.1016/j.physe.2009.12.051</a>}, number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures}, publisher={Elsevier BV}, author={Piegdon, Karoline A. and Offer, Matthias and Lorke, Axel and Urbanski, Martin and Hoischen, Andreas and Kitzerow, Heinz-Siegfried and Declair, Stefan and Förstner, Jens and Meier, Torsten and Reuter, Dirk and et al.}, year={2010}, pages={2552–2555} }"},"intvolume":"        42","page":"2552-2555","publisher":"Elsevier BV","date_updated":"2023-01-10T13:59:58Z","author":[{"first_name":"Karoline A.","full_name":"Piegdon, Karoline A.","last_name":"Piegdon"},{"first_name":"Matthias","full_name":"Offer, Matthias","last_name":"Offer"},{"first_name":"Axel","last_name":"Lorke","full_name":"Lorke, Axel"},{"first_name":"Martin","last_name":"Urbanski","full_name":"Urbanski, Martin"},{"first_name":"Andreas","full_name":"Hoischen, Andreas","last_name":"Hoischen"},{"full_name":"Kitzerow, Heinz-Siegfried","id":"254","last_name":"Kitzerow","first_name":"Heinz-Siegfried"},{"first_name":"Stefan","full_name":"Declair, Stefan","last_name":"Declair"},{"first_name":"Jens","full_name":"Förstner, Jens","last_name":"Förstner"},{"last_name":"Meier","full_name":"Meier, Torsten","first_name":"Torsten"},{"first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter"},{"first_name":"Andreas D.","last_name":"Wieck","full_name":"Wieck, Andreas D."},{"first_name":"Cedrik","full_name":"Meier, Cedrik","last_name":"Meier"}],"date_created":"2019-02-21T14:43:30Z","volume":42,"title":"Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator","doi":"10.1016/j.physe.2009.12.051","type":"journal_article","publication":"Physica E: Low-dimensional Systems and Nanostructures","status":"public","_id":"7993","user_id":"254","department":[{"_id":"15"},{"_id":"230"},{"_id":"313"}],"language":[{"iso":"eng"}]},{"year":"2010","citation":{"ieee":"K. Laiho, K. N. Cassemiro, D. Gross, and C. Silberhorn, “Probing the Negative Wigner Function of a Pulsed Single Photon Point by Point,” <i>Physical Review Letters</i>, vol. 105, no. 25, Art. no. 253603, 2010, doi: <a href=\"https://doi.org/10.1103/physrevlett.105.253603\">10.1103/physrevlett.105.253603</a>.","chicago":"Laiho, Kaisa, Katiúscia N. Cassemiro, David Gross, and Christine Silberhorn. “Probing the Negative Wigner Function of a Pulsed Single Photon Point by Point.” <i>Physical Review Letters</i> 105, no. 25 (2010). <a href=\"https://doi.org/10.1103/physrevlett.105.253603\">https://doi.org/10.1103/physrevlett.105.253603</a>.","ama":"Laiho K, Cassemiro KN, Gross D, Silberhorn C. 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