[{"doi":"10.1103/physrevb.82.054517","has_accepted_license":"1","abstract":[{"text":"We studied the Fulde-Ferrell-Larkin-Ovchinnikov-type state established due to the proximity effect in superconducting\r\nNb/Cu_41Ni_59 bilayers. Using a special wedge-type deposition technique, series of 20–35\r\nsamples could be fabricated by magnetron sputtering during one run. The layer thickness of only a few\r\nnanometers, the composition of the alloy, and the quality of interfaces were controlled by Rutherford backscattering\r\nspectrometry, high-resolution transmission electron microscopy, and Auger spectroscopy. The magnetic\r\nproperties of the ferromagnetic alloy layer were characterized with superconducting quantum interference\r\ndevice magnetometry. These studies yield precise information about the thickness and demonstrate the homogeneity\r\nof the alloy composition and magnetic properties along the sample series. The dependencies of the\r\ncritical temperature on the Nb and Cu41Ni59 layer thickness, T_c(d_S) and T_c(d_F), were investigated for constant\r\nthickness d_F of the magnetic alloy layer and d_S of the superconducting layer, respectively. All types of\r\nnonmonotonic behaviors of T_c versus d_F predicted by the theory could be realized experimentally, from\r\nreentrant superconducting behavior with a broad extinction region to a slight suppression of superconductivity\r\nwith a shallow minimum. Even a double extinction of superconductivity was observed, giving evidence for the\r\nmultiple reentrant behavior predicted by theory. All critical temperature curves were fitted with suitable sets of\r\nparameters. Then, T_c(d_F) diagrams of a hypothetical ferromagnet/superconductor/ferromagnet spin-switch core\r\nstructure were calculated using these parameters. Finally, superconducting spin-switch fabrication issues are\r\ndiscussed in detail in view of the achieved results.","lang":"eng"}],"title":"Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers","file":[{"date_created":"2018-08-28T12:23:29Z","content_type":"application/pdf","access_level":"closed","file_id":"4201","file_name":"Reentrant superconductivity in superconductor-ferromagnetic-alloy bilayers.pdf","file_size":723266,"creator":"hclaudia","success":1,"date_updated":"2018-08-28T12:23:29Z","relation":"main_file"}],"extern":"1","user_id":"55706","type":"journal_article","publication":"Physical Review B","ddc":["530"],"article_number":"054517","issue":"5","volume":82,"intvolume":"        82","article_type":"original","author":[{"first_name":"V. I.","full_name":"Zdravkov, V. I.","last_name":"Zdravkov"},{"full_name":"Kehrle, J.","first_name":"J.","last_name":"Kehrle"},{"last_name":"Obermeier","full_name":"Obermeier, G.","first_name":"G."},{"first_name":"S.","full_name":"Gsell, S.","last_name":"Gsell"},{"full_name":"Schreck, M.","first_name":"M.","last_name":"Schreck"},{"last_name":"Müller","full_name":"Müller, C.","first_name":"C."},{"last_name":"Krug von Nidda","full_name":"Krug von Nidda, H.-A.","first_name":"H.-A."},{"id":"20797","last_name":"Lindner","full_name":"Lindner, Jörg","first_name":"Jörg"},{"last_name":"Moosburger-Will","first_name":"J.","full_name":"Moosburger-Will, J."},{"last_name":"Nold","full_name":"Nold, E.","first_name":"E."},{"first_name":"R.","full_name":"Morari, R.","last_name":"Morari"},{"full_name":"Ryazanov, V. V.","first_name":"V. V.","last_name":"Ryazanov"},{"first_name":"A. S.","full_name":"Sidorenko, A. S.","last_name":"Sidorenko"},{"first_name":"S.","full_name":"Horn, S.","last_name":"Horn"},{"full_name":"Tidecks, R.","first_name":"R.","last_name":"Tidecks"},{"last_name":"Tagirov","first_name":"L. R.","full_name":"Tagirov, L. R."}],"department":[{"_id":"15"}],"citation":{"chicago":"Zdravkov, V. I., J. Kehrle, G. Obermeier, S. Gsell, M. Schreck, C. Müller, H.-A. Krug von Nidda, et al. “Reentrant Superconductivity in Superconductor/Ferromagnetic-Alloy Bilayers.” <i>Physical Review B</i> 82, no. 5 (2010). <a href=\"https://doi.org/10.1103/physrevb.82.054517\">https://doi.org/10.1103/physrevb.82.054517</a>.","ieee":"V. I. Zdravkov <i>et al.</i>, “Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers,” <i>Physical Review B</i>, vol. 82, no. 5, 2010.","ama":"Zdravkov VI, Kehrle J, Obermeier G, et al. Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers. <i>Physical Review B</i>. 2010;82(5). doi:<a href=\"https://doi.org/10.1103/physrevb.82.054517\">10.1103/physrevb.82.054517</a>","apa":"Zdravkov, V. I., Kehrle, J., Obermeier, G., Gsell, S., Schreck, M., Müller, C., … Tagirov, L. R. (2010). Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers. <i>Physical Review B</i>, <i>82</i>(5). <a href=\"https://doi.org/10.1103/physrevb.82.054517\">https://doi.org/10.1103/physrevb.82.054517</a>","short":"V.I. Zdravkov, J. Kehrle, G. Obermeier, S. Gsell, M. Schreck, C. Müller, H.-A. Krug von Nidda, J. Lindner, J. Moosburger-Will, E. Nold, R. Morari, V.V. Ryazanov, A.S. Sidorenko, S. Horn, R. Tidecks, L.R. Tagirov, Physical Review B 82 (2010).","mla":"Zdravkov, V. I., et al. “Reentrant Superconductivity in Superconductor/Ferromagnetic-Alloy Bilayers.” <i>Physical Review B</i>, vol. 82, no. 5, 054517, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.82.054517\">10.1103/physrevb.82.054517</a>.","bibtex":"@article{Zdravkov_Kehrle_Obermeier_Gsell_Schreck_Müller_Krug von Nidda_Lindner_Moosburger-Will_Nold_et al._2010, title={Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers}, volume={82}, DOI={<a href=\"https://doi.org/10.1103/physrevb.82.054517\">10.1103/physrevb.82.054517</a>}, number={5054517}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Zdravkov, V. I. and Kehrle, J. and Obermeier, G. and Gsell, S. and Schreck, M. and Müller, C. and Krug von Nidda, H.-A. and Lindner, Jörg and Moosburger-Will, J. and Nold, E. and et al.}, year={2010} }"},"publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"year":"2010","language":[{"iso":"eng"}],"status":"public","date_created":"2018-08-28T12:22:11Z","publisher":"American Physical Society (APS)","date_updated":"2022-01-06T07:00:34Z","file_date_updated":"2018-08-28T12:23:29Z","_id":"4200"},{"status":"public","year":"2010","publication_identifier":{"issn":["0021-8979","1089-7550"]},"language":[{"iso":"eng"}],"publisher":"AIP Publishing","date_created":"2018-08-28T12:27:34Z","date_updated":"2022-01-06T07:00:34Z","file_date_updated":"2018-08-28T12:28:22Z","_id":"4202","intvolume":"       107","author":[{"last_name":"Zhu","first_name":"Tongtong","full_name":"Zhu, Tongtong"},{"first_name":"Carol F.","full_name":"Johnston, Carol F.","last_name":"Johnston"},{"last_name":"Häberlen","full_name":"Häberlen, Maik","first_name":"Maik"},{"last_name":"Kappers","full_name":"Kappers, Menno J.","first_name":"Menno J."},{"full_name":"Oliver, Rachel A.","first_name":"Rachel A.","last_name":"Oliver"}],"article_type":"original","department":[{"_id":"15"}],"publication_status":"published","citation":{"short":"T. Zhu, C.F. Johnston, M. Häberlen, M.J. Kappers, R.A. Oliver, Journal of Applied Physics 107 (2010).","mla":"Zhu, Tongtong, et al. “Characterization of Unintentional Doping in Nonpolar GaN.” <i>Journal of Applied Physics</i>, vol. 107, no. 2, 023503, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3284944\">10.1063/1.3284944</a>.","bibtex":"@article{Zhu_Johnston_Häberlen_Kappers_Oliver_2010, title={Characterization of unintentional doping in nonpolar GaN}, volume={107}, DOI={<a href=\"https://doi.org/10.1063/1.3284944\">10.1063/1.3284944</a>}, number={2023503}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Zhu, Tongtong and Johnston, Carol F. and Häberlen, Maik and Kappers, Menno J. and Oliver, Rachel A.}, year={2010} }","chicago":"Zhu, Tongtong, Carol F. Johnston, Maik Häberlen, Menno J. Kappers, and Rachel A. Oliver. “Characterization of Unintentional Doping in Nonpolar GaN.” <i>Journal of Applied Physics</i> 107, no. 2 (2010). <a href=\"https://doi.org/10.1063/1.3284944\">https://doi.org/10.1063/1.3284944</a>.","ieee":"T. Zhu, C. F. Johnston, M. Häberlen, M. J. Kappers, and R. A. Oliver, “Characterization of unintentional doping in nonpolar GaN,” <i>Journal of Applied Physics</i>, vol. 107, no. 2, 2010.","ama":"Zhu T, Johnston CF, Häberlen M, Kappers MJ, Oliver RA. Characterization of unintentional doping in nonpolar GaN. <i>Journal of Applied Physics</i>. 2010;107(2). doi:<a href=\"https://doi.org/10.1063/1.3284944\">10.1063/1.3284944</a>","apa":"Zhu, T., Johnston, C. F., Häberlen, M., Kappers, M. J., &#38; Oliver, R. A. (2010). Characterization of unintentional doping in nonpolar GaN. <i>Journal of Applied Physics</i>, <i>107</i>(2). <a href=\"https://doi.org/10.1063/1.3284944\">https://doi.org/10.1063/1.3284944</a>"},"type":"journal_article","publication":"Journal of Applied Physics","ddc":["530"],"issue":"2","article_number":"023503","volume":107,"has_accepted_license":"1","doi":"10.1063/1.3284944","abstract":[{"lang":"eng","text":"Unintentional doping in nonpolar a-plane \u0001112¯0\u0002 gallium nitride \u0001GaN\u0002 grown on r-plane \u000111¯02\u0002\r\nsapphire using a three-dimensional \u00013D\u0002–two-dimensional \u00012D\u0002 growth method has been\r\ncharacterized. For both 2D only and 3D–2D growth, the presence of an unintentionally doped region\r\nadjacent to the GaN/sapphire interface is observed by scanning capacitance microscopy \u0001SCM\u0002. The\r\naverage width of this unintentionally doped layer is found to increase with increasing 3D growth\r\ntime. By using an intentionally doped GaN:Si staircase structure for calibration, it is shown that the\r\nunintentionally doped region has an average carrier concentration of \u00012.5\u00010.3\u0002\u00021018 cm−3. SCM\r\nalso reveals the presence of unintentionally doped features extending at 60° from the GaN/sapphire\r\ninterface. The observation of decreasing carrier concentration with distance from the GaN/sapphire\r\ninterface along these features may suggest that the unintentional doping arises from oxygen\r\ndiffusion from the sapphire substrate. Low temperature cathodoluminescence spectra reveal\r\nemission peaks at 3.41 and 3.30 eV, which are believed to originate from basal plane stacking faults\r\n\u0001BSFs\u0002 and prismatic stacking faults \u0001PSFs\u0002, respectively. It is shown that the inclined features\r\nextending from the GaN/sapphire interface exhibit both enhanced BSF and PSF emission. We\r\nsuggest that enhanced unintentional doping occurs in regions around PSFs. Where BSFs intersect\r\nthis doped material their emission is also enhanced due to reduced nonradiative recombination.\r\nTransmission electron microscopy confirms the presence of PSFs extending through the film at 60°\r\nfrom the GaN/sapphire interface."}],"file":[{"success":1,"relation":"main_file","date_updated":"2018-08-28T12:28:22Z","date_created":"2018-08-28T12:28:22Z","file_id":"4203","access_level":"closed","content_type":"application/pdf","file_name":"Characterization of unintentional doping in nonpolar GaN.pdf","file_size":688753,"creator":"hclaudia"}],"extern":"1","title":"Characterization of unintentional doping in nonpolar GaN","user_id":"55706"},{"status":"public","language":[{"iso":"eng"}],"publication_identifier":{"issn":["1098-0121","1550-235X"]},"year":"2010","publisher":"American Physical Society (APS)","date_created":"2018-08-28T12:30:15Z","date_updated":"2022-01-06T07:00:35Z","file_date_updated":"2018-08-28T12:31:01Z","_id":"4204","intvolume":"        82","author":[{"first_name":"F.","full_name":"Zirkelbach, F.","last_name":"Zirkelbach"},{"last_name":"Stritzker","full_name":"Stritzker, B.","first_name":"B."},{"full_name":"Nordlund, K.","first_name":"K.","last_name":"Nordlund"},{"first_name":"Jörg","full_name":"Lindner, Jörg","last_name":"Lindner","id":"20797"},{"last_name":"Schmidt","first_name":"W. G.","full_name":"Schmidt, W. G."},{"last_name":"Rauls","full_name":"Rauls, E.","first_name":"E."}],"article_type":"original","department":[{"_id":"15"},{"_id":"286"}],"publication_status":"published","citation":{"mla":"Zirkelbach, F., et al. “Defects in Carbon Implanted Silicon Calculated by Classical Potentials and First-Principles Methods.” <i>Physical Review B</i>, vol. 82, no. 9, 094110, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.82.094110\">10.1103/physrevb.82.094110</a>.","bibtex":"@article{Zirkelbach_Stritzker_Nordlund_Lindner_Schmidt_Rauls_2010, title={Defects in carbon implanted silicon calculated by classical potentials and first-principles methods}, volume={82}, DOI={<a href=\"https://doi.org/10.1103/physrevb.82.094110\">10.1103/physrevb.82.094110</a>}, number={9094110}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Lindner, Jörg and Schmidt, W. G. and Rauls, E.}, year={2010} }","short":"F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W.G. Schmidt, E. Rauls, Physical Review B 82 (2010).","apa":"Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J., Schmidt, W. G., &#38; Rauls, E. (2010). Defects in carbon implanted silicon calculated by classical potentials and first-principles methods. <i>Physical Review B</i>, <i>82</i>(9). <a href=\"https://doi.org/10.1103/physrevb.82.094110\">https://doi.org/10.1103/physrevb.82.094110</a>","ama":"Zirkelbach F, Stritzker B, Nordlund K, Lindner J, Schmidt WG, Rauls E. Defects in carbon implanted silicon calculated by classical potentials and first-principles methods. <i>Physical Review B</i>. 2010;82(9). doi:<a href=\"https://doi.org/10.1103/physrevb.82.094110\">10.1103/physrevb.82.094110</a>","chicago":"Zirkelbach, F., B. Stritzker, K. Nordlund, Jörg Lindner, W. G. Schmidt, and E. Rauls. “Defects in Carbon Implanted Silicon Calculated by Classical Potentials and First-Principles Methods.” <i>Physical Review B</i> 82, no. 9 (2010). <a href=\"https://doi.org/10.1103/physrevb.82.094110\">https://doi.org/10.1103/physrevb.82.094110</a>.","ieee":"F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W. G. Schmidt, and E. Rauls, “Defects in carbon implanted silicon calculated by classical potentials and first-principles methods,” <i>Physical Review B</i>, vol. 82, no. 9, 2010."},"type":"journal_article","ddc":["530"],"publication":"Physical Review B","issue":"9","article_number":"094110","volume":82,"has_accepted_license":"1","doi":"10.1103/physrevb.82.094110","abstract":[{"text":"A comparative theoretical investigation of carbon interstitials in silicon is presented. Calculations using\r\nclassical potentials are compared to first-principles density-functional theory calculations of the geometries,\r\nformation, and activation energies of the carbon dumbbell interstitial, showing the importance of a quantummechanical\r\ndescription of this system. In contrast to previous studies, the present first-principles calculations of\r\nthe interstitial carbon migration path yield an activation energy that excellently matches the experiment. The\r\nbond-centered interstitial configuration shows a net magnetization of two electrons, illustrating the need for\r\nspin-polarized calculations.","lang":"eng"}],"file":[{"date_updated":"2018-08-28T12:31:01Z","relation":"main_file","success":1,"creator":"hclaudia","file_size":238023,"file_name":"Defects in Carbon implanted Silicon calculated by classical potentials and first principles methods.pdf","content_type":"application/pdf","file_id":"4205","access_level":"closed","date_created":"2018-08-28T12:31:01Z"}],"title":"Defects in carbon implanted silicon calculated by classical potentials and first-principles methods","user_id":"55706"},{"date_created":"2018-08-28T12:34:11Z","type":"conference_abstract","year":"2010","status":"public","_id":"4206","date_updated":"2022-01-06T07:00:35Z","title":"Advanced topics and applications of Transmission Electron Microscopy, Part I-II","conference":{"start_date":"2010-04-14","location":"Universidad Autónoma de Madrid (Spain)","name":"Guest Lectures at Departamento de Fisica Applicada, Master de Materiales Avanzados y Nanotecnologias ","end_date":"2010-04-16"},"author":[{"first_name":"Jörg","full_name":"Lindner, Jörg","id":"20797","last_name":"Lindner"}],"citation":{"ieee":"J. Lindner, “Advanced topics and applications of Transmission Electron Microscopy, Part I-II,” presented at the Guest Lectures at Departamento de Fisica Applicada, Master de Materiales Avanzados y Nanotecnologias , Universidad Autónoma de Madrid (Spain), 2010.","chicago":"Lindner, Jörg. “Advanced Topics and Applications of Transmission Electron Microscopy, Part I-II,” 2010.","apa":"Lindner, J. (2010). Advanced topics and applications of Transmission Electron Microscopy, Part I-II. Presented at the Guest Lectures at Departamento de Fisica Applicada, Master de Materiales Avanzados y Nanotecnologias , Universidad Autónoma de Madrid (Spain).","ama":"Lindner J. Advanced topics and applications of Transmission Electron Microscopy, Part I-II. In: ; 2010.","short":"J. Lindner, in: 2010.","bibtex":"@inproceedings{Lindner_2010, title={Advanced topics and applications of Transmission Electron Microscopy, Part I-II}, author={Lindner, Jörg}, year={2010} }","mla":"Lindner, Jörg. <i>Advanced Topics and Applications of Transmission Electron Microscopy, Part I-II</i>. 2010."},"user_id":"55706","department":[{"_id":"15"},{"_id":"286"}]},{"volume":1181,"_id":"4207","date_updated":"2022-01-06T07:00:35Z","publisher":"MRS Symposium Proceedings ","date_created":"2018-08-28T12:38:16Z","status":"public","language":[{"iso":"eng"}],"year":"2010","type":"book_editor","publication_identifier":{"isbn":["978-1-60511-154-4"]},"publication_status":"published","user_id":"55706","citation":{"bibtex":"@book{Ila_Kishimoto_Lindner_Baglin_2010, title={Ion Beams and Nano-Engineering}, volume={1181}, publisher={MRS Symposium Proceedings }, year={2010} }","mla":"Ila, D., et al., editors. <i>Ion Beams and Nano-Engineering</i>. Vol. 1181, MRS Symposium Proceedings , 2010.","short":"D. Ila, N. Kishimoto, J. Lindner, J. Baglin, eds., Ion Beams and Nano-Engineering, MRS Symposium Proceedings , 2010.","ama":"Ila D, Kishimoto N, Lindner J, Baglin J, eds. <i>Ion Beams and Nano-Engineering</i>. Vol 1181. MRS Symposium Proceedings ; 2010.","apa":"Ila, D., Kishimoto, N., Lindner, J., &#38; Baglin, J. (Eds.). (2010). <i>Ion Beams and Nano-Engineering</i> (Vol. 1181). Presented at the MRS Spring Meeting 2009, San Francisco (USA): MRS Symposium Proceedings .","ieee":"D. Ila, N. Kishimoto, J. Lindner, and J. Baglin, Eds., <i>Ion Beams and Nano-Engineering</i>, vol. 1181. MRS Symposium Proceedings , 2010.","chicago":"Ila, D., N.  Kishimoto, Jörg Lindner, and J. Baglin, eds. <i>Ion Beams and Nano-Engineering</i>. Vol. 1181. MRS Symposium Proceedings , 2010."},"department":[{"_id":"15"},{"_id":"286"}],"editor":[{"last_name":"Ila","full_name":"Ila, D.","first_name":"D."},{"first_name":"N. ","full_name":"Kishimoto, N. ","last_name":"Kishimoto"},{"id":"20797","last_name":"Lindner","first_name":"Jörg","full_name":"Lindner, Jörg"},{"last_name":"Baglin","first_name":"J.","full_name":"Baglin, J."}],"title":"Ion Beams and Nano-Engineering","conference":{"location":"San Francisco (USA)","name":"MRS Spring Meeting 2009"},"intvolume":"      1181"},{"user_id":"55706","title":"Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers","file":[{"date_updated":"2018-08-28T12:40:20Z","relation":"main_file","success":1,"file_name":"Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNx and AlGaN layers.pdf","file_size":13011359,"creator":"hclaudia","date_created":"2018-08-28T12:40:20Z","content_type":"application/pdf","file_id":"4209","access_level":"closed"}],"has_accepted_license":"1","abstract":[{"text":"Growth of GaN on Si(111) potentially enables cost efficient manufacturing of optoelectronic devices due to the possibility of using cheap large area substrates. However, GaN layers grown on Si(111) substrates suffer from high tensile stress that can lead to cracking at layer thicknesses exceeding 1 μm. Another challenge is the high dislocation density of GaN layers grown on Si(111) which is detrimental to device performance. In this paper we show that a step graded AlGaN buffer layer can compensate tensile stress, avoiding cracking, and at the same time reduce the dislocation density. An additional SiNx interlayer in the GaN layer is shown to further reduce the dislocation density down to the high 108 /cm². Weak beam dark field TEM was used to study the dislocation reduction in cross sectional samples and for comparison of the step graded AlGaN buffer layer structure to a continuously graded one. STEM ADF was used to determine the exact location of dislocation bending with respect to the position of the interface.","lang":"eng"}],"doi":"10.1088/1742-6596/209/1/012017","volume":209,"article_number":"012017","ddc":["530"],"publication":"Journal of Physics: Conference Series","type":"journal_article","citation":{"chicago":"Häberlen, M, D Zhu, C McAleese, M J Kappers, and C J Humphreys. “Dislocation Reduction in MOVPE Grown GaN Layers on (111)Si Using SiNxand AlGaN Layers.” <i>Journal of Physics: Conference Series</i> 209 (2010). <a href=\"https://doi.org/10.1088/1742-6596/209/1/012017\">https://doi.org/10.1088/1742-6596/209/1/012017</a>.","ieee":"M. Häberlen, D. Zhu, C. McAleese, M. J. Kappers, and C. J. Humphreys, “Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers,” <i>Journal of Physics: Conference Series</i>, vol. 209, 2010.","ama":"Häberlen M, Zhu D, McAleese C, Kappers MJ, Humphreys CJ. Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers. <i>Journal of Physics: Conference Series</i>. 2010;209. doi:<a href=\"https://doi.org/10.1088/1742-6596/209/1/012017\">10.1088/1742-6596/209/1/012017</a>","apa":"Häberlen, M., Zhu, D., McAleese, C., Kappers, M. J., &#38; Humphreys, C. J. (2010). Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers. <i>Journal of Physics: Conference Series</i>, <i>209</i>. <a href=\"https://doi.org/10.1088/1742-6596/209/1/012017\">https://doi.org/10.1088/1742-6596/209/1/012017</a>","short":"M. Häberlen, D. Zhu, C. McAleese, M.J. Kappers, C.J. Humphreys, Journal of Physics: Conference Series 209 (2010).","mla":"Häberlen, M., et al. “Dislocation Reduction in MOVPE Grown GaN Layers on (111)Si Using SiNxand AlGaN Layers.” <i>Journal of Physics: Conference Series</i>, vol. 209, 012017, IOP Publishing, 2010, doi:<a href=\"https://doi.org/10.1088/1742-6596/209/1/012017\">10.1088/1742-6596/209/1/012017</a>.","bibtex":"@article{Häberlen_Zhu_McAleese_Kappers_Humphreys_2010, title={Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers}, volume={209}, DOI={<a href=\"https://doi.org/10.1088/1742-6596/209/1/012017\">10.1088/1742-6596/209/1/012017</a>}, number={012017}, journal={Journal of Physics: Conference Series}, publisher={IOP Publishing}, author={Häberlen, M and Zhu, D and McAleese, C and Kappers, M J and Humphreys, C J}, year={2010} }"},"publication_status":"published","department":[{"_id":"15"}],"article_type":"original","author":[{"first_name":"M","full_name":"Häberlen, M","last_name":"Häberlen"},{"full_name":"Zhu, D","first_name":"D","last_name":"Zhu"},{"last_name":"McAleese","full_name":"McAleese, C","first_name":"C"},{"last_name":"Kappers","first_name":"M J","full_name":"Kappers, M J"},{"full_name":"Humphreys, C J","first_name":"C J","last_name":"Humphreys"}],"intvolume":"       209","file_date_updated":"2018-08-28T12:40:20Z","_id":"4208","date_updated":"2022-01-06T07:00:36Z","date_created":"2018-08-28T12:39:31Z","publisher":"IOP Publishing","publication_identifier":{"issn":["1742-6596"]},"year":"2010","language":[{"iso":"eng"}],"status":"public"},{"intvolume":"       247","author":[{"full_name":"Häberlen, Maik","first_name":"Maik","last_name":"Häberlen"},{"last_name":"Zhu","full_name":"Zhu, Dandan","first_name":"Dandan"},{"first_name":"Clifford","full_name":"McAleese, Clifford","last_name":"McAleese"},{"last_name":"Zhu","full_name":"Zhu, Tongtong","first_name":"Tongtong"},{"last_name":"Kappers","first_name":"Menno J.","full_name":"Kappers, Menno J."},{"full_name":"Humphreys, Colin J.","first_name":"Colin J.","last_name":"Humphreys"}],"article_type":"original","department":[{"_id":"15"}],"publication_status":"published","citation":{"ieee":"M. Häberlen, D. Zhu, C. McAleese, T. Zhu, M. J. Kappers, and C. J. Humphreys, “Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer,” <i>physica status solidi (b)</i>, vol. 247, no. 7, pp. 1753–1756, 2010.","chicago":"Häberlen, Maik, Dandan Zhu, Clifford McAleese, Tongtong Zhu, Menno J. Kappers, and Colin J. Humphreys. “Dislocation Reduction in GaN Grown on Si(111) Using a Strain-Driven 3D GaN Interlayer.” <i>Physica Status Solidi (B)</i> 247, no. 7 (2010): 1753–56. <a href=\"https://doi.org/10.1002/pssb.200983537\">https://doi.org/10.1002/pssb.200983537</a>.","apa":"Häberlen, M., Zhu, D., McAleese, C., Zhu, T., Kappers, M. J., &#38; Humphreys, C. J. (2010). Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer. <i>Physica Status Solidi (B)</i>, <i>247</i>(7), 1753–1756. <a href=\"https://doi.org/10.1002/pssb.200983537\">https://doi.org/10.1002/pssb.200983537</a>","ama":"Häberlen M, Zhu D, McAleese C, Zhu T, Kappers MJ, Humphreys CJ. Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer. <i>physica status solidi (b)</i>. 2010;247(7):1753-1756. doi:<a href=\"https://doi.org/10.1002/pssb.200983537\">10.1002/pssb.200983537</a>","short":"M. Häberlen, D. Zhu, C. McAleese, T. Zhu, M.J. Kappers, C.J. Humphreys, Physica Status Solidi (B) 247 (2010) 1753–1756.","bibtex":"@article{Häberlen_Zhu_McAleese_Zhu_Kappers_Humphreys_2010, title={Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer}, volume={247}, DOI={<a href=\"https://doi.org/10.1002/pssb.200983537\">10.1002/pssb.200983537</a>}, number={7}, journal={physica status solidi (b)}, publisher={Wiley}, author={Häberlen, Maik and Zhu, Dandan and McAleese, Clifford and Zhu, Tongtong and Kappers, Menno J. and Humphreys, Colin J.}, year={2010}, pages={1753–1756} }","mla":"Häberlen, Maik, et al. “Dislocation Reduction in GaN Grown on Si(111) Using a Strain-Driven 3D GaN Interlayer.” <i>Physica Status Solidi (B)</i>, vol. 247, no. 7, Wiley, 2010, pp. 1753–56, doi:<a href=\"https://doi.org/10.1002/pssb.200983537\">10.1002/pssb.200983537</a>."},"status":"public","publication_identifier":{"issn":["0370-1972","1521-3951"]},"year":"2010","language":[{"iso":"eng"}],"publisher":"Wiley","date_created":"2018-08-28T12:42:58Z","date_updated":"2022-01-06T07:00:36Z","file_date_updated":"2018-08-28T12:43:31Z","_id":"4210","abstract":[{"text":"In this paper we demonstrate a strain-driven GaN interlayer method to reduce dislocation densities in GaN grown on (111) oriented silicon by metal organic vapour phase epitaxy (MOVPE). In order to achieve crack-free GaN layers of\r\nreasonable thicknesses and dislocation densities it is crucial to integrate both dislocation reduction and strain management layers. In contrast to techniques like FACELO or nanoELO we show the in situ formation of GaN islands directly on the AlN nucleation layer without the need to deposit a SiO2 or SiNx mask. A graded AlGaN layer for strain management can be grown on top of this dislocation reducing 3D GaN inter-layer in order to achieve crack-free GaN layers grown on top of the AlGaN strain management layer. Furthermore, an additional SiNx layer for subsequent dislocation reduction can also be incorporated into the structure and is shown to efficiently reduce the dislocation density down to the low 10^9 cm^2. The structural properties of the 3D GaN island buffer layer and overgrown\r\nsamples are studied by means of SEM, cross-sectional, and plan view TEM. Cathodoluminiscence in an SEM is employed to correlate the dislocation microstructure as observed by plan view TEM with luminescent properties.","lang":"eng"}],"doi":"10.1002/pssb.200983537","has_accepted_license":"1","file":[{"date_created":"2018-08-28T12:43:31Z","file_id":"4211","content_type":"application/pdf","access_level":"closed","file_size":911931,"file_name":"Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer.pdf","creator":"hclaudia","success":1,"relation":"main_file","date_updated":"2018-08-28T12:43:31Z"}],"title":"Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer","user_id":"55706","type":"journal_article","publication":"physica status solidi (b)","ddc":["530"],"issue":"7","volume":247,"page":"1753-1756"},{"article_type":"original","author":[{"last_name":"Häberlen","full_name":"Häberlen, M.","first_name":"M."},{"full_name":"Badcock, T. J.","first_name":"T. J.","last_name":"Badcock"},{"first_name":"M. A.","full_name":"Moram, M. A.","last_name":"Moram"},{"first_name":"J. L.","full_name":"Hollander, J. L.","last_name":"Hollander"},{"full_name":"Kappers, M. J.","first_name":"M. J.","last_name":"Kappers"},{"last_name":"Dawson","full_name":"Dawson, P.","first_name":"P."},{"last_name":"Humphreys","full_name":"Humphreys, C. J.","first_name":"C. J."},{"last_name":"Oliver","first_name":"R. A.","full_name":"Oliver, R. A."}],"intvolume":"       108","citation":{"mla":"Häberlen, M., et al. “Low Temperature Photoluminescence and Cathodoluminescence Studies of Nonpolar GaN Grown Using Epitaxial Lateral Overgrowth.” <i>Journal of Applied Physics</i>, vol. 108, no. 3, 033523, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3460641\">10.1063/1.3460641</a>.","bibtex":"@article{Häberlen_Badcock_Moram_Hollander_Kappers_Dawson_Humphreys_Oliver_2010, title={Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth}, volume={108}, DOI={<a href=\"https://doi.org/10.1063/1.3460641\">10.1063/1.3460641</a>}, number={3033523}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Häberlen, M. and Badcock, T. J. and Moram, M. A. and Hollander, J. L. and Kappers, M. J. and Dawson, P. and Humphreys, C. J. and Oliver, R. A.}, year={2010} }","short":"M. Häberlen, T.J. Badcock, M.A. Moram, J.L. Hollander, M.J. Kappers, P. Dawson, C.J. Humphreys, R.A. Oliver, Journal of Applied Physics 108 (2010).","apa":"Häberlen, M., Badcock, T. J., Moram, M. A., Hollander, J. L., Kappers, M. J., Dawson, P., … Oliver, R. A. (2010). Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth. <i>Journal of Applied Physics</i>, <i>108</i>(3). <a href=\"https://doi.org/10.1063/1.3460641\">https://doi.org/10.1063/1.3460641</a>","ama":"Häberlen M, Badcock TJ, Moram MA, et al. Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth. <i>Journal of Applied Physics</i>. 2010;108(3). doi:<a href=\"https://doi.org/10.1063/1.3460641\">10.1063/1.3460641</a>","chicago":"Häberlen, M., T. J. Badcock, M. A. Moram, J. L. Hollander, M. J. Kappers, P. Dawson, C. J. Humphreys, and R. A. Oliver. “Low Temperature Photoluminescence and Cathodoluminescence Studies of Nonpolar GaN Grown Using Epitaxial Lateral Overgrowth.” <i>Journal of Applied Physics</i> 108, no. 3 (2010). <a href=\"https://doi.org/10.1063/1.3460641\">https://doi.org/10.1063/1.3460641</a>.","ieee":"M. Häberlen <i>et al.</i>, “Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth,” <i>Journal of Applied Physics</i>, vol. 108, no. 3, 2010."},"publication_status":"published","department":[{"_id":"15"}],"date_created":"2018-08-28T12:46:49Z","publisher":"AIP Publishing","language":[{"iso":"eng"}],"publication_identifier":{"issn":["0021-8979","1089-7550"]},"year":"2010","status":"public","_id":"4212","file_date_updated":"2018-08-28T12:47:23Z","date_updated":"2022-01-06T07:00:37Z","title":"Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth","file":[{"creator":"hclaudia","file_size":2391054,"file_name":"Low temperature photoluminescence and cathodoluminescence studies of non-polar GaN grown using epitaxial lateral overgrowth.pdf","content_type":"application/pdf","access_level":"closed","file_id":"4213","date_created":"2018-08-28T12:47:23Z","relation":"main_file","date_updated":"2018-08-28T12:47:23Z","success":1}],"abstract":[{"lang":"eng","text":"Low temperature cathodo- and photoluminescence has been performed on nonpolar a-plane GaN films grown using epitaxial lateral overgrowth. In films overgrown at a low V–III ratio, the emission spectrum is dominated by “yellow” and “blue” luminescence bands, attributed to recombination at point defects or impurities. The intensity of this emission is observed to decrease steadily across the window region along the −c direction, possibly due to asymmetric diffusion of a point defect/impurity species. When overgrown at a higher V–III ratio, the near band edge and basal-plane stacking fault emission intensity increases by orders of magnitude and a donor–acceptor pair band is observed. Using monochromatic cathodoluminescence imaging, the various emission features are correlated with the microstructure of the film. In particular, the peak energy of the basal-plane stacking fault emission is seen to be blueshifted by \u000415 meV in the wing relative to the window region, which may be related to the different strain states in the respective regions."}],"has_accepted_license":"1","doi":"10.1063/1.3460641","user_id":"55706","publication":"Journal of Applied Physics","ddc":["530"],"type":"journal_article","volume":108,"article_number":"033523","issue":"3"},{"issue":"23","page":"3536-3543","volume":312,"type":"journal_article","publication":"Journal of Crystal Growth","ddc":["530"],"user_id":"55706","has_accepted_license":"1","doi":"10.1016/j.jcrysgro.2010.08.041","abstract":[{"lang":"eng","text":"Non-polar a -plane (1 1 2 ̄ 0) GaN films were grown on r-plane sapphire by metal–organic vapor phase epitaxy and were subsequently annealed for 90 min at 1070°C. Most dislocations were partial\r\ndislocations, which terminated basal plane stacking faults. Prior to annealing, these dislocations were\r\nrandomly distributed. After annealing, these dislocations moved into arrays oriented along the [0 0 0 1]\r\ndirection and aligned perpendicular to the film–substrate interface throughout their length, although\r\nthe total dislocation density remained unchanged. These changes were accompanied by broadening of\r\nthe symmetric X-ray diffraction 1 1 2 ̄ 0 w-scan widths. The mechanism of movement was identified as\r\ndislocation glide, occurring due to highly anisotropic stresses (confirmed by X-ray diffraction lattice\r\nparameter measurements) and evidenced by macroscopic slip bands observed on the sample surface.\r\nThere was also an increase in the density of unintentionally n-type doped electrically conductive\r\ninclined features present at the film–substrate interface (as observed in cross-section using scanning\r\ncapacitance microscopy), suggesting out-diffusion of impurities from the substrate along with prismatic\r\nstacking faults. These data suggest that annealing processes performed close to film growth\r\ntemperatures can affect both the microstructure and the electrical properties of non-polar GaN films."}],"title":"The effects of annealing on non-polar (112¯0) a-plane GaN films","file":[{"file_size":1218752,"file_name":"The effects of annealing on non-polar (11-20) a-plane GaN films.pdf","creator":"hclaudia","date_created":"2018-08-28T12:50:07Z","file_id":"4215","access_level":"closed","content_type":"application/pdf","relation":"main_file","date_updated":"2018-08-28T12:50:07Z","success":1}],"date_updated":"2022-01-06T07:00:37Z","_id":"4214","file_date_updated":"2018-08-28T12:50:07Z","year":"2010","publication_identifier":{"issn":["0022-0248"]},"language":[{"iso":"eng"}],"status":"public","date_created":"2018-08-28T12:49:39Z","publisher":"Elsevier BV","department":[{"_id":"15"}],"citation":{"ieee":"R. Hao <i>et al.</i>, “The effects of annealing on non-polar (112¯0) a-plane GaN films,” <i>Journal of Crystal Growth</i>, vol. 312, no. 23, pp. 3536–3543, 2010.","chicago":"Hao, Rui, T. Zhu, M. Häberlen, T.Y. Chang, M.J. Kappers, R.A. Oliver, C.J. Humphreys, and M.A. Moram. “The Effects of Annealing on Non-Polar (112¯0) a-Plane GaN Films.” <i>Journal of Crystal Growth</i> 312, no. 23 (2010): 3536–43. <a href=\"https://doi.org/10.1016/j.jcrysgro.2010.08.041\">https://doi.org/10.1016/j.jcrysgro.2010.08.041</a>.","ama":"Hao R, Zhu T, Häberlen M, et al. The effects of annealing on non-polar (112¯0) a-plane GaN films. <i>Journal of Crystal Growth</i>. 2010;312(23):3536-3543. doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2010.08.041\">10.1016/j.jcrysgro.2010.08.041</a>","apa":"Hao, R., Zhu, T., Häberlen, M., Chang, T. Y., Kappers, M. J., Oliver, R. A., … Moram, M. A. (2010). The effects of annealing on non-polar (112¯0) a-plane GaN films. <i>Journal of Crystal Growth</i>, <i>312</i>(23), 3536–3543. <a href=\"https://doi.org/10.1016/j.jcrysgro.2010.08.041\">https://doi.org/10.1016/j.jcrysgro.2010.08.041</a>","short":"R. Hao, T. Zhu, M. Häberlen, T.Y. Chang, M.J. Kappers, R.A. Oliver, C.J. Humphreys, M.A. Moram, Journal of Crystal Growth 312 (2010) 3536–3543.","bibtex":"@article{Hao_Zhu_Häberlen_Chang_Kappers_Oliver_Humphreys_Moram_2010, title={The effects of annealing on non-polar (112¯0) a-plane GaN films}, volume={312}, DOI={<a href=\"https://doi.org/10.1016/j.jcrysgro.2010.08.041\">10.1016/j.jcrysgro.2010.08.041</a>}, number={23}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Hao, Rui and Zhu, T. and Häberlen, M. and Chang, T.Y. and Kappers, M.J. and Oliver, R.A. and Humphreys, C.J. and Moram, M.A.}, year={2010}, pages={3536–3543} }","mla":"Hao, Rui, et al. “The Effects of Annealing on Non-Polar (112¯0) a-Plane GaN Films.” <i>Journal of Crystal Growth</i>, vol. 312, no. 23, Elsevier BV, 2010, pp. 3536–43, doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2010.08.041\">10.1016/j.jcrysgro.2010.08.041</a>."},"publication_status":"published","intvolume":"       312","article_type":"original","author":[{"last_name":"Hao","full_name":"Hao, Rui","first_name":"Rui"},{"last_name":"Zhu","full_name":"Zhu, T.","first_name":"T."},{"first_name":"M.","full_name":"Häberlen, M.","last_name":"Häberlen"},{"first_name":"T.Y.","full_name":"Chang, T.Y.","last_name":"Chang"},{"last_name":"Kappers","full_name":"Kappers, M.J.","first_name":"M.J."},{"last_name":"Oliver","first_name":"R.A.","full_name":"Oliver, R.A."},{"last_name":"Humphreys","first_name":"C.J.","full_name":"Humphreys, C.J."},{"full_name":"Moram, M.A.","first_name":"M.A.","last_name":"Moram"}]},{"_id":"4216","file_date_updated":"2018-08-28T12:54:26Z","date_updated":"2022-01-06T07:00:38Z","publisher":"Trans Tech Publications","date_created":"2018-08-28T12:53:50Z","status":"public","language":[{"iso":"eng"}],"year":"2010","publication_identifier":{"issn":["1662-9752"]},"publication_status":"published","citation":{"ama":"Scholle A, Greulich-Weber S, Rauls E, Schmidt WG, Gerstmann U. Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC. <i>Materials Science Forum</i>. 2010;645-648:403-406. doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.645-648.403\">10.4028/www.scientific.net/msf.645-648.403</a>","apa":"Scholle, A., Greulich-Weber, S., Rauls, E., Schmidt, W. G., &#38; Gerstmann, U. (2010). Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC. <i>Materials Science Forum</i>, <i>645</i>–<i>648</i>, 403–406. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.645-648.403\">https://doi.org/10.4028/www.scientific.net/msf.645-648.403</a>","chicago":"Scholle, Andreas, Siegmund Greulich-Weber, Eva Rauls, Wolf Gero Schmidt, and Uwe Gerstmann. “Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC.” <i>Materials Science Forum</i> 645–648 (2010): 403–6. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.645-648.403\">https://doi.org/10.4028/www.scientific.net/msf.645-648.403</a>.","ieee":"A. Scholle, S. Greulich-Weber, E. Rauls, W. G. Schmidt, and U. Gerstmann, “Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC,” <i>Materials Science Forum</i>, vol. 645–648, pp. 403–406, 2010.","mla":"Scholle, Andreas, et al. “Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC.” <i>Materials Science Forum</i>, vol. 645–648, Trans Tech Publications, 2010, pp. 403–06, doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.645-648.403\">10.4028/www.scientific.net/msf.645-648.403</a>.","bibtex":"@article{Scholle_Greulich-Weber_Rauls_Schmidt_Gerstmann_2010, title={Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC}, volume={645–648}, DOI={<a href=\"https://doi.org/10.4028/www.scientific.net/msf.645-648.403\">10.4028/www.scientific.net/msf.645-648.403</a>}, journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Scholle, Andreas and Greulich-Weber, Siegmund and Rauls, Eva and Schmidt, Wolf Gero and Gerstmann, Uwe}, year={2010}, pages={403–406} }","short":"A. Scholle, S. Greulich-Weber, E. Rauls, W.G. Schmidt, U. Gerstmann, Materials Science Forum 645–648 (2010) 403–406."},"department":[{"_id":"15"}],"author":[{"last_name":"Scholle","first_name":"Andreas","full_name":"Scholle, Andreas"},{"full_name":"Greulich-Weber, Siegmund","first_name":"Siegmund","last_name":"Greulich-Weber"},{"first_name":"Eva","full_name":"Rauls, Eva","last_name":"Rauls"},{"first_name":"Wolf Gero","full_name":"Schmidt, Wolf Gero","last_name":"Schmidt"},{"first_name":"Uwe","full_name":"Gerstmann, Uwe","last_name":"Gerstmann"}],"article_type":"original","volume":"645-648","page":"403-406","publication":"Materials Science Forum","ddc":["530"],"type":"journal_article","user_id":"55706","file":[{"success":1,"relation":"main_file","date_updated":"2018-08-28T12:54:26Z","file_id":"4217","content_type":"application/pdf","access_level":"closed","date_created":"2018-08-28T12:54:26Z","creator":"hclaudia","file_size":583484,"file_name":"Fine structure of triplet centers in room temperature irradiated 6H-SiC.pdf"}],"title":"Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC","abstract":[{"lang":"eng","text":"In non-annealed 6H-SiC samples that were electron irradiated at room temperature, a new\r\nEPR signal due to a S=1 defect center with exceptionally large zero-field splitting (D = +652·10-4\r\ncm-1) has been observed under illumination. A positive sign of D demonstrates that the spin-orbit\r\ncontribution to the zero-field splitting exceeds by far that of the spin-spin interaction. A principal\r\naxis of the fine structure tilted by 59° against the crystal c-axis as well as the exceptionally high\r\nzero-field splitting D can be qualitatively understood by the occurrence of additional close-lying\r\ndefect levels in defect clusters resulting in comparatively large second-order spin-orbit coupling. A\r\ntentative assignment to vacancy clusters is supported by the observed annealing behavior."}],"doi":"10.4028/www.scientific.net/msf.645-648.403","has_accepted_license":"1"},{"date_updated":"2022-01-06T07:03:13Z","_id":"6619","year":"2010","publication_identifier":{"issn":["0009-286X","1522-2640"]},"language":[{"iso":"ger"}],"status":"public","date_created":"2019-01-10T10:13:09Z","publisher":"Wiley","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"citation":{"bibtex":"@article{Warnecke_Bothe_Zrenner_Berth_Hüsch_2010, title={Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*}, volume={82}, DOI={<a href=\"https://doi.org/10.1002/cite.200900169\">10.1002/cite.200900169</a>}, number={3}, journal={Chemie Ingenieur Technik}, publisher={Wiley}, author={Warnecke, H.-J. and Bothe, D. and Zrenner, Artur and Berth, Gerhard and Hüsch, K.-P.}, year={2010}, pages={251–258} }","mla":"Warnecke, H. J., et al. “Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*.” <i>Chemie Ingenieur Technik</i>, vol. 82, no. 3, Wiley, 2010, pp. 251–58, doi:<a href=\"https://doi.org/10.1002/cite.200900169\">10.1002/cite.200900169</a>.","short":"H.-J. Warnecke, D. Bothe, A. Zrenner, G. Berth, K.-P. Hüsch, Chemie Ingenieur Technik 82 (2010) 251–258.","ama":"Warnecke H-J, Bothe D, Zrenner A, Berth G, Hüsch K-P. Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*. <i>Chemie Ingenieur Technik</i>. 2010;82(3):251-258. doi:<a href=\"https://doi.org/10.1002/cite.200900169\">10.1002/cite.200900169</a>","apa":"Warnecke, H.-J., Bothe, D., Zrenner, A., Berth, G., &#38; Hüsch, K.-P. (2010). Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*. <i>Chemie Ingenieur Technik</i>, <i>82</i>(3), 251–258. <a href=\"https://doi.org/10.1002/cite.200900169\">https://doi.org/10.1002/cite.200900169</a>","ieee":"H.-J. Warnecke, D. Bothe, A. Zrenner, G. Berth, and K.-P. Hüsch, “Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*,” <i>Chemie Ingenieur Technik</i>, vol. 82, no. 3, pp. 251–258, 2010.","chicago":"Warnecke, H.-J., D. Bothe, Artur Zrenner, Gerhard Berth, and K.-P. Hüsch. “Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*.” <i>Chemie Ingenieur Technik</i> 82, no. 3 (2010): 251–58. <a href=\"https://doi.org/10.1002/cite.200900169\">https://doi.org/10.1002/cite.200900169</a>."},"publication_status":"published","intvolume":"        82","article_type":"original","author":[{"last_name":"Warnecke","first_name":"H.-J.","full_name":"Warnecke, H.-J."},{"first_name":"D.","full_name":"Bothe, D.","last_name":"Bothe"},{"full_name":"Zrenner, Artur","first_name":"Artur","last_name":"Zrenner","id":"606","orcid":"0000-0002-5190-0944"},{"id":"53","last_name":"Berth","first_name":"Gerhard","full_name":"Berth, Gerhard"},{"last_name":"Hüsch","full_name":"Hüsch, K.-P.","first_name":"K.-P."}],"issue":"3","page":"251-258","volume":82,"type":"journal_article","publication":"Chemie Ingenieur Technik","user_id":"49428","abstract":[{"lang":"ger","text":"Strömungsbasierte Mischprozesse sind grundlegender Bestandteil vieler chemischer Prozesse. Realisierbare Mischzeiten reichen von einigen Millisekunden bis zu Sekunden, wobei die vollständige Homogenisierung oft nicht sichergestellt ist. Werden kinetische Parameter chemischer Reaktionen dieses Zeitskalenbereichs ohne Berücksichtigung der Mischprozesse bestimmt, sind sie mischungsmaskiert und geben die inhärente chemische Kinetik nicht wieder. In dieser Arbeit wird die Validierung und Anwendung einer Methode zur Bestimmung inhärenter chemischer Kinetiken von in Flüssigphase ablaufenden chemischen Reaktionen im stationären, laminaren Flachbettmikroreaktor vorgestellt. Der verfolgte Ansatz basiert auf der mechanistischen Modellierung der Molmengen unter Berücksichtigung von Konvektion, Diffusion und Reaktion und der Bestimmung der unbekannten Parameter durch Anpassung des Modells an experimentell ermittelte Konzentrationsverläufe."}],"doi":"10.1002/cite.200900169","title":"Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*"},{"department":[{"_id":"15"},{"_id":"230"},{"_id":"313"}],"publication_status":"published","citation":{"apa":"Piegdon, K. A., Offer, M., Lorke, A., Urbanski, M., Hoischen, A., Kitzerow, H.-S., Declair, S., Förstner, J., Meier, T., Reuter, D., Wieck, A. D., &#38; Meier, C. (2010). Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, <i>42</i>(10), 2552–2555. <a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">https://doi.org/10.1016/j.physe.2009.12.051</a>","ama":"Piegdon KA, Offer M, Lorke A, et al. Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2010;42(10):2552-2555. doi:<a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">10.1016/j.physe.2009.12.051</a>","chicago":"Piegdon, Karoline A., Matthias Offer, Axel Lorke, Martin Urbanski, Andreas Hoischen, Heinz-Siegfried Kitzerow, Stefan Declair, et al. “Self-Assembled Quantum Dots in a Liquid-Crystal-Tunable Microdisk Resonator.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i> 42, no. 10 (2010): 2552–55. <a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">https://doi.org/10.1016/j.physe.2009.12.051</a>.","ieee":"K. A. Piegdon <i>et al.</i>, “Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, vol. 42, no. 10, pp. 2552–2555, 2010, doi: <a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">10.1016/j.physe.2009.12.051</a>.","mla":"Piegdon, Karoline A., et al. “Self-Assembled Quantum Dots in a Liquid-Crystal-Tunable Microdisk Resonator.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, vol. 42, no. 10, Elsevier BV, 2010, pp. 2552–55, doi:<a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">10.1016/j.physe.2009.12.051</a>.","bibtex":"@article{Piegdon_Offer_Lorke_Urbanski_Hoischen_Kitzerow_Declair_Förstner_Meier_Reuter_et al._2010, title={Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator}, volume={42}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">10.1016/j.physe.2009.12.051</a>}, number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures}, publisher={Elsevier BV}, author={Piegdon, Karoline A. and Offer, Matthias and Lorke, Axel and Urbanski, Martin and Hoischen, Andreas and Kitzerow, Heinz-Siegfried and Declair, Stefan and Förstner, Jens and Meier, Torsten and Reuter, Dirk and et al.}, year={2010}, pages={2552–2555} }","short":"K.A. Piegdon, M. Offer, A. Lorke, M. Urbanski, A. Hoischen, H.-S. Kitzerow, S. Declair, J. Förstner, T. Meier, D. Reuter, A.D. Wieck, C. Meier, Physica E: Low-Dimensional Systems and Nanostructures 42 (2010) 2552–2555."},"intvolume":"        42","author":[{"last_name":"Piegdon","full_name":"Piegdon, Karoline A.","first_name":"Karoline A."},{"last_name":"Offer","first_name":"Matthias","full_name":"Offer, Matthias"},{"full_name":"Lorke, Axel","first_name":"Axel","last_name":"Lorke"},{"last_name":"Urbanski","first_name":"Martin","full_name":"Urbanski, Martin"},{"last_name":"Hoischen","full_name":"Hoischen, Andreas","first_name":"Andreas"},{"id":"254","last_name":"Kitzerow","first_name":"Heinz-Siegfried","full_name":"Kitzerow, Heinz-Siegfried"},{"last_name":"Declair","first_name":"Stefan","full_name":"Declair, Stefan"},{"first_name":"Jens","full_name":"Förstner, Jens","last_name":"Förstner"},{"full_name":"Meier, Torsten","first_name":"Torsten","last_name":"Meier"},{"id":"37763","last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk"},{"last_name":"Wieck","first_name":"Andreas D.","full_name":"Wieck, Andreas D."},{"full_name":"Meier, Cedrik","first_name":"Cedrik","last_name":"Meier"}],"date_updated":"2023-01-10T13:59:58Z","_id":"7993","status":"public","language":[{"iso":"eng"}],"year":"2010","publication_identifier":{"issn":["1386-9477"]},"publisher":"Elsevier BV","date_created":"2019-02-21T14:43:30Z","user_id":"254","doi":"10.1016/j.physe.2009.12.051","title":"Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator","issue":"10","volume":42,"page":"2552-2555","type":"journal_article","publication":"Physica E: Low-dimensional Systems and Nanostructures"},{"author":[{"last_name":"Laiho","full_name":"Laiho, Kaisa","first_name":"Kaisa"},{"full_name":"Cassemiro, Katiúscia N.","first_name":"Katiúscia N.","last_name":"Cassemiro"},{"last_name":"Gross","first_name":"David","full_name":"Gross, David"},{"first_name":"Christine","full_name":"Silberhorn, Christine","id":"26263","last_name":"Silberhorn"}],"intvolume":"       105","publication_status":"published","citation":{"short":"K. Laiho, K.N. Cassemiro, D. Gross, C. Silberhorn, Physical Review Letters 105 (2010).","bibtex":"@article{Laiho_Cassemiro_Gross_Silberhorn_2010, title={Probing the Negative Wigner Function of a Pulsed Single Photon Point by Point}, volume={105}, DOI={<a href=\"https://doi.org/10.1103/physrevlett.105.253603\">10.1103/physrevlett.105.253603</a>}, number={25253603}, journal={Physical Review Letters}, publisher={American Physical Society (APS)}, author={Laiho, Kaisa and Cassemiro, Katiúscia N. and Gross, David and Silberhorn, Christine}, year={2010} }","mla":"Laiho, Kaisa, et al. “Probing the Negative Wigner Function of a Pulsed Single Photon Point by Point.” <i>Physical Review Letters</i>, vol. 105, no. 25, 253603, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevlett.105.253603\">10.1103/physrevlett.105.253603</a>.","ieee":"K. Laiho, K. N. Cassemiro, D. Gross, and C. Silberhorn, “Probing the Negative Wigner Function of a Pulsed Single Photon Point by Point,” <i>Physical Review Letters</i>, vol. 105, no. 25, Art. no. 253603, 2010, doi: <a href=\"https://doi.org/10.1103/physrevlett.105.253603\">10.1103/physrevlett.105.253603</a>.","chicago":"Laiho, Kaisa, Katiúscia N. Cassemiro, David Gross, and Christine Silberhorn. “Probing the Negative Wigner Function of a Pulsed Single Photon Point by Point.” <i>Physical Review Letters</i> 105, no. 25 (2010). <a href=\"https://doi.org/10.1103/physrevlett.105.253603\">https://doi.org/10.1103/physrevlett.105.253603</a>.","ama":"Laiho K, Cassemiro KN, Gross D, Silberhorn C. Probing the Negative Wigner Function of a Pulsed Single Photon Point by Point. <i>Physical Review Letters</i>. 2010;105(25). doi:<a href=\"https://doi.org/10.1103/physrevlett.105.253603\">10.1103/physrevlett.105.253603</a>","apa":"Laiho, K., Cassemiro, K. N., Gross, D., &#38; Silberhorn, C. (2010). Probing the Negative Wigner Function of a Pulsed Single Photon Point by Point. <i>Physical Review Letters</i>, <i>105</i>(25), Article 253603. <a href=\"https://doi.org/10.1103/physrevlett.105.253603\">https://doi.org/10.1103/physrevlett.105.253603</a>"},"department":[{"_id":"288"},{"_id":"15"}],"publisher":"American Physical Society (APS)","date_created":"2023-01-26T08:28:09Z","status":"public","publication_identifier":{"issn":["0031-9007","1079-7114"]},"year":"2010","language":[{"iso":"eng"}],"_id":"40194","date_updated":"2023-01-30T12:52:26Z","title":"Probing the Negative Wigner Function of a Pulsed Single Photon Point by Point","doi":"10.1103/physrevlett.105.253603","user_id":"26263","keyword":["General Physics and Astronomy"],"publication":"Physical Review Letters","type":"journal_article","volume":105,"issue":"25","article_number":"253603"},{"department":[{"_id":"288"},{"_id":"15"}],"publication_status":"published","citation":{"ieee":"K. N. Cassemiro, K. Laiho, and C. Silberhorn, “Accessing the purity of a single photon by the width of the Hong–Ou–Mandel interference,” <i>New Journal of Physics</i>, vol. 12, no. 11, Art. no. 113052, 2010, doi: <a href=\"https://doi.org/10.1088/1367-2630/12/11/113052\">10.1088/1367-2630/12/11/113052</a>.","chicago":"Cassemiro, Katiúscia N, Kaisa Laiho, and Christine Silberhorn. “Accessing the Purity of a Single Photon by the Width of the Hong–Ou–Mandel Interference.” <i>New Journal of Physics</i> 12, no. 11 (2010). <a href=\"https://doi.org/10.1088/1367-2630/12/11/113052\">https://doi.org/10.1088/1367-2630/12/11/113052</a>.","apa":"Cassemiro, K. N., Laiho, K., &#38; Silberhorn, C. (2010). Accessing the purity of a single photon by the width of the Hong–Ou–Mandel interference. <i>New Journal of Physics</i>, <i>12</i>(11), Article 113052. <a href=\"https://doi.org/10.1088/1367-2630/12/11/113052\">https://doi.org/10.1088/1367-2630/12/11/113052</a>","ama":"Cassemiro KN, Laiho K, Silberhorn C. Accessing the purity of a single photon by the width of the Hong–Ou–Mandel interference. <i>New Journal of Physics</i>. 2010;12(11). doi:<a href=\"https://doi.org/10.1088/1367-2630/12/11/113052\">10.1088/1367-2630/12/11/113052</a>","short":"K.N. Cassemiro, K. Laiho, C. Silberhorn, New Journal of Physics 12 (2010).","bibtex":"@article{Cassemiro_Laiho_Silberhorn_2010, title={Accessing the purity of a single photon by the width of the Hong–Ou–Mandel interference}, volume={12}, DOI={<a href=\"https://doi.org/10.1088/1367-2630/12/11/113052\">10.1088/1367-2630/12/11/113052</a>}, number={11113052}, journal={New Journal of Physics}, publisher={IOP Publishing}, author={Cassemiro, Katiúscia N and Laiho, Kaisa and Silberhorn, Christine}, year={2010} }","mla":"Cassemiro, Katiúscia N., et al. “Accessing the Purity of a Single Photon by the Width of the Hong–Ou–Mandel Interference.” <i>New Journal of Physics</i>, vol. 12, no. 11, 113052, IOP Publishing, 2010, doi:<a href=\"https://doi.org/10.1088/1367-2630/12/11/113052\">10.1088/1367-2630/12/11/113052</a>."},"intvolume":"        12","author":[{"last_name":"Cassemiro","full_name":"Cassemiro, Katiúscia N","first_name":"Katiúscia N"},{"last_name":"Laiho","full_name":"Laiho, Kaisa","first_name":"Kaisa"},{"last_name":"Silberhorn","id":"26263","full_name":"Silberhorn, Christine","first_name":"Christine"}],"date_updated":"2023-01-30T12:53:06Z","_id":"40195","status":"public","language":[{"iso":"eng"}],"year":"2010","publication_identifier":{"issn":["1367-2630"]},"publisher":"IOP Publishing","date_created":"2023-01-26T08:29:50Z","keyword":["General Physics and Astronomy"],"user_id":"26263","doi":"10.1088/1367-2630/12/11/113052","title":"Accessing the purity of a single photon by the width of the Hong–Ou–Mandel interference","issue":"11","article_number":"113052","volume":12,"type":"journal_article","publication":"New Journal of Physics"},{"type":"journal_article","publication":"Physical Review Letters","article_number":"050502","issue":"5","volume":104,"doi":"10.1103/physrevlett.104.050502","title":"Photons Walking the Line: A Quantum Walk with Adjustable Coin Operations","user_id":"26263","keyword":["General Physics and Astronomy"],"year":"2010","publication_identifier":{"issn":["0031-9007","1079-7114"]},"language":[{"iso":"eng"}],"status":"public","date_created":"2023-01-26T08:39:44Z","publisher":"American Physical Society (APS)","date_updated":"2023-01-30T12:56:01Z","_id":"40206","intvolume":"       104","author":[{"full_name":"Schreiber, A.","first_name":"A.","last_name":"Schreiber"},{"full_name":"Cassemiro, K. N.","first_name":"K. N.","last_name":"Cassemiro"},{"first_name":"V.","full_name":"Potoček, V.","last_name":"Potoček"},{"full_name":"Gábris, A.","first_name":"A.","last_name":"Gábris"},{"full_name":"Mosley, P. J.","first_name":"P. J.","last_name":"Mosley"},{"last_name":"Andersson","first_name":"E.","full_name":"Andersson, E."},{"last_name":"Jex","full_name":"Jex, I.","first_name":"I."},{"id":"26263","last_name":"Silberhorn","first_name":"Christine","full_name":"Silberhorn, Christine"}],"department":[{"_id":"288"},{"_id":"15"}],"citation":{"apa":"Schreiber, A., Cassemiro, K. N., Potoček, V., Gábris, A., Mosley, P. J., Andersson, E., Jex, I., &#38; Silberhorn, C. (2010). Photons Walking the Line: A Quantum Walk with Adjustable Coin Operations. <i>Physical Review Letters</i>, <i>104</i>(5), Article 050502. <a href=\"https://doi.org/10.1103/physrevlett.104.050502\">https://doi.org/10.1103/physrevlett.104.050502</a>","ama":"Schreiber A, Cassemiro KN, Potoček V, et al. Photons Walking the Line: A Quantum Walk with Adjustable Coin Operations. <i>Physical Review Letters</i>. 2010;104(5). doi:<a href=\"https://doi.org/10.1103/physrevlett.104.050502\">10.1103/physrevlett.104.050502</a>","chicago":"Schreiber, A., K. N. Cassemiro, V. Potoček, A. Gábris, P. J. Mosley, E. Andersson, I. Jex, and Christine Silberhorn. “Photons Walking the Line: A Quantum Walk with Adjustable Coin Operations.” <i>Physical Review Letters</i> 104, no. 5 (2010). <a href=\"https://doi.org/10.1103/physrevlett.104.050502\">https://doi.org/10.1103/physrevlett.104.050502</a>.","ieee":"A. Schreiber <i>et al.</i>, “Photons Walking the Line: A Quantum Walk with Adjustable Coin Operations,” <i>Physical Review Letters</i>, vol. 104, no. 5, Art. no. 050502, 2010, doi: <a href=\"https://doi.org/10.1103/physrevlett.104.050502\">10.1103/physrevlett.104.050502</a>.","mla":"Schreiber, A., et al. “Photons Walking the Line: A Quantum Walk with Adjustable Coin Operations.” <i>Physical Review Letters</i>, vol. 104, no. 5, 050502, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevlett.104.050502\">10.1103/physrevlett.104.050502</a>.","bibtex":"@article{Schreiber_Cassemiro_Potoček_Gábris_Mosley_Andersson_Jex_Silberhorn_2010, title={Photons Walking the Line: A Quantum Walk with Adjustable Coin Operations}, volume={104}, DOI={<a href=\"https://doi.org/10.1103/physrevlett.104.050502\">10.1103/physrevlett.104.050502</a>}, number={5050502}, journal={Physical Review Letters}, publisher={American Physical Society (APS)}, author={Schreiber, A. and Cassemiro, K. N. and Potoček, V. and Gábris, A. and Mosley, P. J. and Andersson, E. and Jex, I. and Silberhorn, Christine}, year={2010} }","short":"A. Schreiber, K.N. Cassemiro, V. Potoček, A. Gábris, P.J. Mosley, E. Andersson, I. Jex, C. Silberhorn, Physical Review Letters 104 (2010)."},"publication_status":"published"},{"department":[{"_id":"288"},{"_id":"15"}],"user_id":"26263","publication_status":"published","keyword":["General Physics and Astronomy"],"citation":{"bibtex":"@article{Avenhaus_Laiho_Chekhova_Silberhorn_2010, title={Accessing Higher Order Correlations in Quantum Optical States by Time Multiplexing}, volume={104}, DOI={<a href=\"https://doi.org/10.1103/physrevlett.104.063602\">10.1103/physrevlett.104.063602</a>}, number={6063602}, journal={Physical Review Letters}, publisher={American Physical Society (APS)}, author={Avenhaus, M. and Laiho, K. and Chekhova, M. V. and Silberhorn, Christine}, year={2010} }","mla":"Avenhaus, M., et al. “Accessing Higher Order Correlations in Quantum Optical States by Time Multiplexing.” <i>Physical Review Letters</i>, vol. 104, no. 6, 063602, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevlett.104.063602\">10.1103/physrevlett.104.063602</a>.","short":"M. Avenhaus, K. Laiho, M.V. Chekhova, C. Silberhorn, Physical Review Letters 104 (2010).","ama":"Avenhaus M, Laiho K, Chekhova MV, Silberhorn C. Accessing Higher Order Correlations in Quantum Optical States by Time Multiplexing. <i>Physical Review Letters</i>. 2010;104(6). doi:<a href=\"https://doi.org/10.1103/physrevlett.104.063602\">10.1103/physrevlett.104.063602</a>","apa":"Avenhaus, M., Laiho, K., Chekhova, M. V., &#38; Silberhorn, C. (2010). Accessing Higher Order Correlations in Quantum Optical States by Time Multiplexing. <i>Physical Review Letters</i>, <i>104</i>(6), Article 063602. <a href=\"https://doi.org/10.1103/physrevlett.104.063602\">https://doi.org/10.1103/physrevlett.104.063602</a>","ieee":"M. Avenhaus, K. Laiho, M. V. Chekhova, and C. Silberhorn, “Accessing Higher Order Correlations in Quantum Optical States by Time Multiplexing,” <i>Physical Review Letters</i>, vol. 104, no. 6, Art. no. 063602, 2010, doi: <a href=\"https://doi.org/10.1103/physrevlett.104.063602\">10.1103/physrevlett.104.063602</a>.","chicago":"Avenhaus, M., K. Laiho, M. V. Chekhova, and Christine Silberhorn. “Accessing Higher Order Correlations in Quantum Optical States by Time Multiplexing.” <i>Physical Review Letters</i> 104, no. 6 (2010). <a href=\"https://doi.org/10.1103/physrevlett.104.063602\">https://doi.org/10.1103/physrevlett.104.063602</a>."},"intvolume":"       104","doi":"10.1103/physrevlett.104.063602","author":[{"first_name":"M.","full_name":"Avenhaus, M.","last_name":"Avenhaus"},{"first_name":"K.","full_name":"Laiho, K.","last_name":"Laiho"},{"last_name":"Chekhova","first_name":"M. V.","full_name":"Chekhova, M. V."},{"last_name":"Silberhorn","id":"26263","first_name":"Christine","full_name":"Silberhorn, Christine"}],"title":"Accessing Higher Order Correlations in Quantum Optical States by Time Multiplexing","date_updated":"2023-01-30T12:55:25Z","issue":"6","article_number":"063602","volume":104,"_id":"40204","status":"public","type":"journal_article","publication_identifier":{"issn":["0031-9007","1079-7114"]},"year":"2010","language":[{"iso":"eng"}],"publisher":"American Physical Society (APS)","publication":"Physical Review Letters","date_created":"2023-01-26T08:37:32Z"},{"status":"public","type":"journal_article","year":"2010","publication_identifier":{"issn":["1367-2630"]},"language":[{"iso":"eng"}],"publisher":"IOP Publishing","publication":"New Journal of Physics","date_created":"2023-01-26T08:32:08Z","date_updated":"2023-01-30T12:54:24Z","issue":"6","article_number":"063001","volume":12,"_id":"40199","intvolume":"        12","doi":"10.1088/1367-2630/12/6/063001","author":[{"first_name":"Agata M","full_name":"Brańczyk, Agata M","last_name":"Brańczyk"},{"first_name":"T C","full_name":"Ralph, T C","last_name":"Ralph"},{"last_name":"Helwig","first_name":"Wolfram","full_name":"Helwig, Wolfram"},{"id":"26263","last_name":"Silberhorn","first_name":"Christine","full_name":"Silberhorn, Christine"}],"title":"Optimized generation of heralded Fock states using parametric down-conversion","department":[{"_id":"288"},{"_id":"15"}],"user_id":"26263","keyword":["General Physics and Astronomy"],"publication_status":"published","citation":{"apa":"Brańczyk, A. M., Ralph, T. C., Helwig, W., &#38; Silberhorn, C. (2010). Optimized generation of heralded Fock states using parametric down-conversion. <i>New Journal of Physics</i>, <i>12</i>(6), Article 063001. <a href=\"https://doi.org/10.1088/1367-2630/12/6/063001\">https://doi.org/10.1088/1367-2630/12/6/063001</a>","ama":"Brańczyk AM, Ralph TC, Helwig W, Silberhorn C. Optimized generation of heralded Fock states using parametric down-conversion. <i>New Journal of Physics</i>. 2010;12(6). doi:<a href=\"https://doi.org/10.1088/1367-2630/12/6/063001\">10.1088/1367-2630/12/6/063001</a>","chicago":"Brańczyk, Agata M, T C Ralph, Wolfram Helwig, and Christine Silberhorn. “Optimized Generation of Heralded Fock States Using Parametric Down-Conversion.” <i>New Journal of Physics</i> 12, no. 6 (2010). <a href=\"https://doi.org/10.1088/1367-2630/12/6/063001\">https://doi.org/10.1088/1367-2630/12/6/063001</a>.","ieee":"A. M. Brańczyk, T. C. Ralph, W. Helwig, and C. Silberhorn, “Optimized generation of heralded Fock states using parametric down-conversion,” <i>New Journal of Physics</i>, vol. 12, no. 6, Art. no. 063001, 2010, doi: <a href=\"https://doi.org/10.1088/1367-2630/12/6/063001\">10.1088/1367-2630/12/6/063001</a>.","mla":"Brańczyk, Agata M., et al. “Optimized Generation of Heralded Fock States Using Parametric Down-Conversion.” <i>New Journal of Physics</i>, vol. 12, no. 6, 063001, IOP Publishing, 2010, doi:<a href=\"https://doi.org/10.1088/1367-2630/12/6/063001\">10.1088/1367-2630/12/6/063001</a>.","bibtex":"@article{Brańczyk_Ralph_Helwig_Silberhorn_2010, title={Optimized generation of heralded Fock states using parametric down-conversion}, volume={12}, DOI={<a href=\"https://doi.org/10.1088/1367-2630/12/6/063001\">10.1088/1367-2630/12/6/063001</a>}, number={6063001}, journal={New Journal of Physics}, publisher={IOP Publishing}, author={Brańczyk, Agata M and Ralph, T C and Helwig, Wolfram and Silberhorn, Christine}, year={2010} }","short":"A.M. Brańczyk, T.C. Ralph, W. Helwig, C. Silberhorn, New Journal of Physics 12 (2010)."}},{"date_created":"2023-04-01T21:30:57Z","publisher":"Wiley‐VCH Verlag","language":[{"iso":"eng"}],"year":"2010","status":"public","_id":"43260","date_updated":"2023-04-01T21:31:08Z","editor":[{"last_name":"Bovensiepen","full_name":"Bovensiepen, U.","first_name":"U."},{"first_name":"H.","full_name":"Petek, H.","last_name":"Petek"},{"full_name":"Wolf, M.","first_name":"M.","last_name":"Wolf"}],"author":[{"last_name":"Güdde","first_name":"J.","full_name":"Güdde, J."},{"last_name":"Rohleder","first_name":"M.","full_name":"Rohleder, M."},{"orcid":"0000-0001-8864-2072","first_name":"Torsten","full_name":"Meier, Torsten","id":"344","last_name":"Meier"},{"full_name":"Koch, S.W.","first_name":"S.W.","last_name":"Koch"},{"first_name":"U.","full_name":"Höfer, U.","last_name":"Höfer"}],"place":"Weinheim","intvolume":"         1","citation":{"apa":"Güdde, J., Rohleder, M., Meier, T., Koch, S. W., &#38; Höfer, U. (2010). Coherently controlled electrical currents at surfaces. In U. Bovensiepen, H. Petek, &#38; M. Wolf (Eds.), <i>Dynamics at Solid State Surfaces and Interfaces</i> (Vol. 1, pp. 579–591). Wiley‐VCH Verlag. <a href=\"https://doi.org/10.1002/9783527633418.ch24\">https://doi.org/10.1002/9783527633418.ch24</a>","bibtex":"@inbook{Güdde_Rohleder_Meier_Koch_Höfer_2010, place={Weinheim}, series={Current Developments}, title={Coherently controlled electrical currents at surfaces}, volume={1}, DOI={<a href=\"https://doi.org/10.1002/9783527633418.ch24\">10.1002/9783527633418.ch24</a>}, booktitle={Dynamics at Solid State Surfaces and Interfaces}, publisher={Wiley‐VCH Verlag}, author={Güdde, J. and Rohleder, M. and Meier, Torsten and Koch, S.W. and Höfer, U.}, editor={Bovensiepen, U. and Petek, H. and Wolf, M.}, year={2010}, pages={579–591}, collection={Current Developments} }","ama":"Güdde J, Rohleder M, Meier T, Koch SW, Höfer U. Coherently controlled electrical currents at surfaces. In: Bovensiepen U, Petek H, Wolf M, eds. <i>Dynamics at Solid State Surfaces and Interfaces</i>. Vol 1. Current Developments. Wiley‐VCH Verlag; 2010:579-591. doi:<a href=\"https://doi.org/10.1002/9783527633418.ch24\">10.1002/9783527633418.ch24</a>","mla":"Güdde, J., et al. “Coherently Controlled Electrical Currents at Surfaces.” <i>Dynamics at Solid State Surfaces and Interfaces</i>, edited by U. Bovensiepen et al., vol. 1, Wiley‐VCH Verlag, 2010, pp. 579–91, doi:<a href=\"https://doi.org/10.1002/9783527633418.ch24\">10.1002/9783527633418.ch24</a>.","ieee":"J. Güdde, M. Rohleder, T. Meier, S. W. Koch, and U. Höfer, “Coherently controlled electrical currents at surfaces,” in <i>Dynamics at Solid State Surfaces and Interfaces</i>, vol. 1, U. Bovensiepen, H. Petek, and M. Wolf, Eds. Weinheim: Wiley‐VCH Verlag, 2010, pp. 579–591.","chicago":"Güdde, J., M. Rohleder, Torsten Meier, S.W. Koch, and U. Höfer. “Coherently Controlled Electrical Currents at Surfaces.” In <i>Dynamics at Solid State Surfaces and Interfaces</i>, edited by U. Bovensiepen, H. Petek, and M. Wolf, 1:579–91. Current Developments. Weinheim: Wiley‐VCH Verlag, 2010. <a href=\"https://doi.org/10.1002/9783527633418.ch24\">https://doi.org/10.1002/9783527633418.ch24</a>.","short":"J. Güdde, M. Rohleder, T. Meier, S.W. Koch, U. Höfer, in: U. Bovensiepen, H. Petek, M. Wolf (Eds.), Dynamics at Solid State Surfaces and Interfaces, Wiley‐VCH Verlag, Weinheim, 2010, pp. 579–591."},"series_title":"Current Developments","publication_status":"published","department":[{"_id":"293"}],"publication":"Dynamics at Solid State Surfaces and Interfaces","type":"book_chapter","page":"579-591","volume":1,"title":"Coherently controlled electrical currents at surfaces","doi":"10.1002/9783527633418.ch24","main_file_link":[{"url":"https://onlinelibrary.wiley.com/doi/10.1002/9783527633418.ch24"}],"user_id":"49063"},{"ddc":["530"],"publication":"Physical Review B","type":"journal_article","volume":82,"article_number":"115316","issue":"11","title":"Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells","file":[{"file_size":639662,"file_name":"2010 Duc,Förstner,Meier_Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells.pdf","creator":"hclaudia","date_created":"2018-08-27T10:27:00Z","file_id":"4128","content_type":"application/pdf","access_level":"closed","relation":"main_file","date_updated":"2018-08-27T10:27:00Z","success":1}],"abstract":[{"lang":"eng","text":"The dynamics of charge and spin injection currents excited by circularly polarized, one-color laser beams in\r\nsemiconductor quantum wells is analyzed. Our microscopic approach is based on a 14x14 k · p band-structure\r\ntheory in combination with multisubband semiconductor Bloch equations which allows a detailed analysis of\r\nthe photogenerated carrier distributions and coherences in k space. Charge and spin injection currents are\r\nnumerically calculated for [110]- and [001]-grown GaAs quantum wells including dc population contributions\r\nand ac contributions that arise from intersubband coherences. The dependencies of the injection currents on the\r\nexcitation conditions, in particular, the photon energy are computed and discussed."}],"has_accepted_license":"1","doi":"10.1103/physrevb.82.115316","user_id":"49063","keyword":["tet_topic_qw"],"date_created":"2018-08-27T10:25:36Z","publisher":"American Physical Society (APS)","year":"2010","publication_identifier":{"issn":["1098-0121","1550-235X"]},"language":[{"iso":"eng"}],"status":"public","file_date_updated":"2018-08-27T10:27:00Z","_id":"4127","date_updated":"2023-04-19T11:11:47Z","article_type":"original","author":[{"last_name":"Duc","full_name":"Duc, Huynh Thanh","first_name":"Huynh Thanh"},{"orcid":"0000-0001-7059-9862","full_name":"Förstner, Jens","first_name":"Jens","id":"158","last_name":"Förstner"},{"orcid":"0000-0001-8864-2072","first_name":"Torsten","full_name":"Meier, Torsten","id":"344","last_name":"Meier"}],"intvolume":"        82","citation":{"ieee":"H. T. Duc, J. Förstner, and T. Meier, “Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells,” <i>Physical Review B</i>, vol. 82, no. 11, Art. no. 115316, 2010, doi: <a href=\"https://doi.org/10.1103/physrevb.82.115316\">10.1103/physrevb.82.115316</a>.","chicago":"Duc, Huynh Thanh, Jens Förstner, and Torsten Meier. “Microscopic Analysis of Charge and Spin Photocurrents Injected by Circularly Polarized One-Color Laser Pulses in GaAs Quantum Wells.” <i>Physical Review B</i> 82, no. 11 (2010). <a href=\"https://doi.org/10.1103/physrevb.82.115316\">https://doi.org/10.1103/physrevb.82.115316</a>.","short":"H.T. Duc, J. Förstner, T. Meier, Physical Review B 82 (2010).","apa":"Duc, H. T., Förstner, J., &#38; Meier, T. (2010). Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells. <i>Physical Review B</i>, <i>82</i>(11), Article 115316. <a href=\"https://doi.org/10.1103/physrevb.82.115316\">https://doi.org/10.1103/physrevb.82.115316</a>","ama":"Duc HT, Förstner J, Meier T. Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells. <i>Physical Review B</i>. 2010;82(11). doi:<a href=\"https://doi.org/10.1103/physrevb.82.115316\">10.1103/physrevb.82.115316</a>","bibtex":"@article{Duc_Förstner_Meier_2010, title={Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells}, volume={82}, DOI={<a href=\"https://doi.org/10.1103/physrevb.82.115316\">10.1103/physrevb.82.115316</a>}, number={11115316}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Duc, Huynh Thanh and Förstner, Jens and Meier, Torsten}, year={2010} }","mla":"Duc, Huynh Thanh, et al. “Microscopic Analysis of Charge and Spin Photocurrents Injected by Circularly Polarized One-Color Laser Pulses in GaAs Quantum Wells.” <i>Physical Review B</i>, vol. 82, no. 11, 115316, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.82.115316\">10.1103/physrevb.82.115316</a>."},"publication_status":"published","department":[{"_id":"15"},{"_id":"230"},{"_id":"293"},{"_id":"170"}]},{"intvolume":"      7600","doi":"10.1117/12.839672","abstract":[{"text":"We report the development of an experimental technique to measure the dynamics of electrical currents on the femtosecond timescale. The technique combines methods of coherent control with time- and angle-resolved photoelectron spectroscopy. Direct snapshots of the momentum distribution of the excited electrons as function of time are then determined by photoelectron spectroscopy. In this way we gain information on the generation and decay of ultrashort current pulses in unprecedented detail. In particular, this technique allows the observation of elastic electron scattering in terms of an incoherent population dynamics in momentum space. We have applied this optical current generation and detection scheme to electrons in so-called image-potential states which represent a prototype of two-dimensional electronic surface states. Electrons in these states are bound perpendicular to the metal surface by the Coulombic image potential whereas they can move almost freely parallel to the surface. For the (n=1) image-potential state of Cu(100) we find a decay time of 10 fs due to electron scattering with steps and surface defects.","lang":"eng"}],"title":"Ultrafast coherent control of electric currents at metal surfaces","editor":[{"last_name":"Song","first_name":"Jin-Joo","full_name":"Song, Jin-Joo"},{"last_name":"Tsen","full_name":"Tsen, Kong-Thon","first_name":"Kong-Thon"},{"last_name":"Betz","first_name":"Markus","full_name":"Betz, Markus"},{"full_name":"Y. Elezzabi, Abdulhakem","first_name":"Abdulhakem","last_name":"Y. Elezzabi"}],"author":[{"last_name":"Güdde","first_name":"J.","full_name":"Güdde, J."},{"first_name":"M.","full_name":"Rohleder, M.","last_name":"Rohleder"},{"orcid":"0000-0001-8864-2072","full_name":"Meier, Torsten","first_name":"Torsten","id":"344","last_name":"Meier"},{"first_name":"S.W.","full_name":"Koch, S.W.","last_name":"Koch"},{"last_name":"Höfer","full_name":"Höfer, U.","first_name":"U."}],"department":[{"_id":"293"}],"series_title":"SPIE Proceedings","citation":{"chicago":"Güdde, J., M. Rohleder, Torsten Meier, S.W. Koch, and U. Höfer. “Ultrafast Coherent Control of Electric Currents at Metal Surfaces.” In <i>Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV</i>, edited by Jin-Joo Song, Kong-Thon Tsen, Markus Betz, and Abdulhakem Y. Elezzabi, Vol. 7600. SPIE Proceedings. SPIE, 2010. <a href=\"https://doi.org/10.1117/12.839672\">https://doi.org/10.1117/12.839672</a>.","ieee":"J. Güdde, M. Rohleder, T. Meier, S. W. Koch, and U. Höfer, “Ultrafast coherent control of electric currents at metal surfaces,” in <i>Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV</i>, 2010, vol. 7600, doi: <a href=\"https://doi.org/10.1117/12.839672\">10.1117/12.839672</a>.","apa":"Güdde, J., Rohleder, M., Meier, T., Koch, S. W., &#38; Höfer, U. (2010). Ultrafast coherent control of electric currents at metal surfaces. In J.-J. Song, K.-T. Tsen, M. Betz, &#38; A. Y. Elezzabi (Eds.), <i>Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV</i> (No. 76001K; Vol. 7600). SPIE. <a href=\"https://doi.org/10.1117/12.839672\">https://doi.org/10.1117/12.839672</a>","ama":"Güdde J, Rohleder M, Meier T, Koch SW, Höfer U. Ultrafast coherent control of electric currents at metal surfaces. In: Song J-J, Tsen K-T, Betz M, Y. Elezzabi A, eds. <i>Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV</i>. Vol 7600. SPIE Proceedings. SPIE; 2010. doi:<a href=\"https://doi.org/10.1117/12.839672\">10.1117/12.839672</a>","short":"J. Güdde, M. Rohleder, T. Meier, S.W. Koch, U. Höfer, in: J.-J. Song, K.-T. Tsen, M. Betz, A. Y. Elezzabi (Eds.), Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV, SPIE, 2010.","mla":"Güdde, J., et al. “Ultrafast Coherent Control of Electric Currents at Metal Surfaces.” <i>Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV</i>, edited by Jin-Joo Song et al., vol. 7600, 76001K, SPIE, 2010, doi:<a href=\"https://doi.org/10.1117/12.839672\">10.1117/12.839672</a>.","bibtex":"@inproceedings{Güdde_Rohleder_Meier_Koch_Höfer_2010, series={SPIE Proceedings}, title={Ultrafast coherent control of electric currents at metal surfaces}, volume={7600}, DOI={<a href=\"https://doi.org/10.1117/12.839672\">10.1117/12.839672</a>}, number={76001K}, booktitle={Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV}, publisher={SPIE}, author={Güdde, J. and Rohleder, M. and Meier, Torsten and Koch, S.W. and Höfer, U.}, editor={Song, Jin-Joo and Tsen, Kong-Thon and Betz, Markus and Y. Elezzabi, Abdulhakem}, year={2010}, collection={SPIE Proceedings} }"},"user_id":"49063","publication_status":"published","main_file_link":[{"url":"https://spie.org/Publications/Proceedings/Paper/10.1117/12.839672"}],"type":"conference","year":"2010","language":[{"iso":"eng"}],"status":"public","publication":"Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV","date_created":"2023-04-01T21:37:05Z","publisher":"SPIE","article_number":"76001K","date_updated":"2023-04-19T11:10:38Z","_id":"43261","volume":7600}]