[{"citation":{"apa":"Herres-Pawlis, S., Berth, G., Wiedemeier, V., Schmidt, L., Zrenner, A., &#38; Warnecke, H.-J. (2010). Oxygen sensing by fluorescence quenching of [Cu(btmgp)I]. <i>Journal of Luminescence</i>, <i>130</i>(10), 1958–1962. <a href=\"https://doi.org/10.1016/j.jlumin.2010.05.012\">https://doi.org/10.1016/j.jlumin.2010.05.012</a>","mla":"Herres-Pawlis, Sonja, et al. “Oxygen Sensing by Fluorescence Quenching of [Cu(Btmgp)I].” <i>Journal of Luminescence</i>, vol. 130, no. 10, Elsevier BV, 2010, pp. 1958–62, doi:<a href=\"https://doi.org/10.1016/j.jlumin.2010.05.012\">10.1016/j.jlumin.2010.05.012</a>.","ieee":"S. Herres-Pawlis, G. Berth, V. Wiedemeier, L. Schmidt, A. Zrenner, and H.-J. Warnecke, “Oxygen sensing by fluorescence quenching of [Cu(btmgp)I],” <i>Journal of Luminescence</i>, vol. 130, no. 10, pp. 1958–1962, 2010.","chicago":"Herres-Pawlis, Sonja, Gerhard Berth, Volker Wiedemeier, Ludger Schmidt, Artur Zrenner, and Hans-Joachim Warnecke. “Oxygen Sensing by Fluorescence Quenching of [Cu(Btmgp)I].” <i>Journal of Luminescence</i> 130, no. 10 (2010): 1958–62. <a href=\"https://doi.org/10.1016/j.jlumin.2010.05.012\">https://doi.org/10.1016/j.jlumin.2010.05.012</a>.","short":"S. Herres-Pawlis, G. Berth, V. Wiedemeier, L. Schmidt, A. Zrenner, H.-J. Warnecke, Journal of Luminescence 130 (2010) 1958–1962.","ama":"Herres-Pawlis S, Berth G, Wiedemeier V, Schmidt L, Zrenner A, Warnecke H-J. Oxygen sensing by fluorescence quenching of [Cu(btmgp)I]. <i>Journal of Luminescence</i>. 2010;130(10):1958-1962. doi:<a href=\"https://doi.org/10.1016/j.jlumin.2010.05.012\">10.1016/j.jlumin.2010.05.012</a>","bibtex":"@article{Herres-Pawlis_Berth_Wiedemeier_Schmidt_Zrenner_Warnecke_2010, title={Oxygen sensing by fluorescence quenching of [Cu(btmgp)I]}, volume={130}, DOI={<a href=\"https://doi.org/10.1016/j.jlumin.2010.05.012\">10.1016/j.jlumin.2010.05.012</a>}, number={10}, journal={Journal of Luminescence}, publisher={Elsevier BV}, author={Herres-Pawlis, Sonja and Berth, Gerhard and Wiedemeier, Volker and Schmidt, Ludger and Zrenner, Artur and Warnecke, Hans-Joachim}, year={2010}, pages={1958–1962} }"},"page":"1958-1962","_id":"4548","publisher":"Elsevier BV","user_id":"49428","volume":130,"status":"public","date_created":"2018-09-20T12:31:16Z","keyword":["Copper Oxygen Fluorescence quenching N donor ligands"],"type":"journal_article","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"publication":"Journal of Luminescence","issue":"10","abstract":[{"text":"A fluorescence study of acetonitrile solutions of bis(tetramethylguanidine)propane, copper(I)-iodide and [Cu(btmgp)I] was performed and the chemical reaction of the latter species with O2 was investigated at room temperature. The actual quenching process via O2 gassing was studied and an exponential dependence of the fluorescence intensity with respect to the complex concentration was observed.\r\nFurthermore the survey was deepened on time resolved fluorescence properties of solved [Cu(btmgp)I] in a wider concentration range. The applicability of this complex for O2 sensing inside a microreactor system was proven by confocal fluorescence measurements. It was shown that the investigated system can be used for oxygen sensing in the copper concentration range from 10−2 to 10−9 mol/l.","lang":"eng"}],"language":[{"iso":"eng"}],"doi":"10.1016/j.jlumin.2010.05.012","year":"2010","title":"Oxygen sensing by fluorescence quenching of [Cu(btmgp)I]","publication_identifier":{"issn":["0022-2313"]},"author":[{"last_name":"Herres-Pawlis","first_name":"Sonja","full_name":"Herres-Pawlis, Sonja"},{"first_name":"Gerhard","last_name":"Berth","full_name":"Berth, Gerhard","id":"53"},{"first_name":"Volker","last_name":"Wiedemeier","full_name":"Wiedemeier, Volker"},{"full_name":"Schmidt, Ludger","last_name":"Schmidt","first_name":"Ludger"},{"id":"606","last_name":"Zrenner","orcid":"0000-0002-5190-0944","first_name":"Artur","full_name":"Zrenner, Artur"},{"last_name":"Warnecke","first_name":"Hans-Joachim","full_name":"Warnecke, Hans-Joachim"}],"publication_status":"published","date_updated":"2022-01-06T07:01:09Z","article_type":"original","intvolume":"       130"},{"date_created":"2018-09-20T12:35:35Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"publication":"Semiconductor Science and Technology","issue":"7","abstract":[{"lang":"eng","text":"Damage caused by laser irradiation on the surface of ZnTe epilayers was studied by micro-Raman and atomic force microscopy (AFM). ZnTe LO-phonon overtones up to four order and TO + (n − 1)LO zone-center phonons were observed in the resonant micro-Raman spectra at room temperature. Discrepancies in the literature regarding the origin of two features observed at low frequencies around 120 and 140 cm−1 in the Raman spectrum of ZnTe are discussed and resolved. These Raman peaks were not detected by using a low excitation laser power density on a Zn-terminated ZnTe surface; however, with the increase of the laser power density they were found to arise irreversibly. The correspondence of these peaks in a wave number with the strongest Raman peaks of the crystalline tellurium phase and the intensity enhancement behavior with the laser power in a similar way as for CdTe strongly suggests the formation of crystalline tellurium aggregates on the layer surface due to laser irradiation damage. AFM data reveal the occurrence of laser ablation on the ZnTe surface even though the surface temperature of the sample is below the melting point."}],"article_number":"075003","language":[{"iso":"eng"}],"doi":"10.1088/0268-1242/25/7/075003","year":"2010","title":"Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers","author":[{"full_name":"Larramendi, E M","last_name":"Larramendi","first_name":"E M"},{"id":"53","first_name":"Gerhard","last_name":"Berth","full_name":"Berth, Gerhard"},{"last_name":"Wiedemeier","first_name":"V","full_name":"Wiedemeier, V"},{"full_name":"Hüsch, K-P","first_name":"K-P","last_name":"Hüsch"},{"id":"606","orcid":"0000-0002-5190-0944","first_name":"Artur","last_name":"Zrenner","full_name":"Zrenner, Artur"},{"first_name":"U","last_name":"Woggon","full_name":"Woggon, U"},{"first_name":"E","last_name":"Tschumak","full_name":"Tschumak, E"},{"last_name":"Lischka","first_name":"K","full_name":"Lischka, K"},{"first_name":"D","last_name":"Schikora","full_name":"Schikora, D"}],"publication_identifier":{"issn":["0268-1242","1361-6641"]},"publication_status":"published","date_updated":"2022-01-06T07:01:09Z","article_type":"original","intvolume":"        25","citation":{"mla":"Larramendi, E. M., et al. “Intensity Enhancement of Te Raman Modes by Laser Damage in ZnTe Epilayers.” <i>Semiconductor Science and Technology</i>, vol. 25, no. 7, 075003, IOP Publishing, 2010, doi:<a href=\"https://doi.org/10.1088/0268-1242/25/7/075003\">10.1088/0268-1242/25/7/075003</a>.","ama":"Larramendi EM, Berth G, Wiedemeier V, et al. Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers. <i>Semiconductor Science and Technology</i>. 2010;25(7). doi:<a href=\"https://doi.org/10.1088/0268-1242/25/7/075003\">10.1088/0268-1242/25/7/075003</a>","bibtex":"@article{Larramendi_Berth_Wiedemeier_Hüsch_Zrenner_Woggon_Tschumak_Lischka_Schikora_2010, title={Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers}, volume={25}, DOI={<a href=\"https://doi.org/10.1088/0268-1242/25/7/075003\">10.1088/0268-1242/25/7/075003</a>}, number={7075003}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Larramendi, E M and Berth, Gerhard and Wiedemeier, V and Hüsch, K-P and Zrenner, Artur and Woggon, U and Tschumak, E and Lischka, K and Schikora, D}, year={2010} }","apa":"Larramendi, E. M., Berth, G., Wiedemeier, V., Hüsch, K.-P., Zrenner, A., Woggon, U., … Schikora, D. (2010). Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers. <i>Semiconductor Science and Technology</i>, <i>25</i>(7). <a href=\"https://doi.org/10.1088/0268-1242/25/7/075003\">https://doi.org/10.1088/0268-1242/25/7/075003</a>","ieee":"E. M. Larramendi <i>et al.</i>, “Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers,” <i>Semiconductor Science and Technology</i>, vol. 25, no. 7, 2010.","short":"E.M. Larramendi, G. Berth, V. Wiedemeier, K.-P. Hüsch, A. Zrenner, U. Woggon, E. Tschumak, K. Lischka, D. Schikora, Semiconductor Science and Technology 25 (2010).","chicago":"Larramendi, E M, Gerhard Berth, V Wiedemeier, K-P Hüsch, Artur Zrenner, U Woggon, E Tschumak, K Lischka, and D Schikora. “Intensity Enhancement of Te Raman Modes by Laser Damage in ZnTe Epilayers.” <i>Semiconductor Science and Technology</i> 25, no. 7 (2010). <a href=\"https://doi.org/10.1088/0268-1242/25/7/075003\">https://doi.org/10.1088/0268-1242/25/7/075003</a>."},"_id":"4549","publisher":"IOP Publishing","user_id":"49428","volume":25,"status":"public"},{"citation":{"ieee":"M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode,” <i>Applied Physics Letters</i>, vol. 97, no. 14, 2010.","apa":"Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner, A., &#38; Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. <i>Applied Physics Letters</i>, <i>97</i>(14). <a href=\"https://doi.org/10.1063/1.3488812\">https://doi.org/10.1063/1.3488812</a>","chicago":"Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, Artur Zrenner, and Cedrik Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” <i>Applied Physics Letters</i> 97, no. 14 (2010). <a href=\"https://doi.org/10.1063/1.3488812\">https://doi.org/10.1063/1.3488812</a>.","short":"M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, C. Meier, Applied Physics Letters 97 (2010).","mla":"Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” <i>Applied Physics Letters</i>, vol. 97, no. 14, 143101, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>.","bibtex":"@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010, title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}, volume={97}, DOI={<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>}, number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, Artur and Meier, Cedrik}, year={2010} }","ama":"Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. <i>Applied Physics Letters</i>. 2010;97(14). doi:<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>"},"status":"public","_id":"4550","publisher":"AIP Publishing","user_id":"20798","volume":97,"publication":"Applied Physics Letters","issue":"14","abstract":[{"text":"We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski–Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices.","lang":"eng"}],"date_created":"2018-09-20T12:38:51Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"287"}],"year":"2010","title":"An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode","author":[{"first_name":"M.","last_name":"Mehta","full_name":"Mehta, M."},{"full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter","id":"37763"},{"full_name":"Wieck, A. D.","first_name":"A. D.","last_name":"Wieck"},{"first_name":"S.","last_name":"Michaelis de Vasconcellos","full_name":"Michaelis de Vasconcellos, S."},{"full_name":"Zrenner, Artur","orcid":"0000-0002-5190-0944","first_name":"Artur","last_name":"Zrenner","id":"606"},{"first_name":"Cedrik","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik","id":"20798"}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","date_updated":"2022-01-06T07:01:09Z","article_type":"original","intvolume":"        97","article_number":"143101","language":[{"iso":"eng"}],"doi":"10.1063/1.3488812"},{"language":[{"iso":"eng"}],"doi":"10.1016/j.physe.2009.12.053","title":"Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode","year":"2010","publication_identifier":{"issn":["1386-9477"]},"author":[{"full_name":"Mehta, Minisha","first_name":"Minisha","last_name":"Mehta"},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"full_name":"Melnikov, Alexander","first_name":"Alexander","last_name":"Melnikov"},{"first_name":"Andreas D.","last_name":"Wieck","full_name":"Wieck, Andreas D."},{"full_name":"Michaelis de Vasconcellos, Steffen","first_name":"Steffen","last_name":"Michaelis de Vasconcellos"},{"full_name":"Baumgarten, Tim","last_name":"Baumgarten","first_name":"Tim"},{"full_name":"Zrenner, Artur","first_name":"Artur","last_name":"Zrenner","orcid":"0000-0002-5190-0944","id":"606"},{"id":"20798","orcid":"https://orcid.org/0000-0002-3787-3572","first_name":"Cedrik","last_name":"Meier","full_name":"Meier, Cedrik"}],"publication_status":"published","date_updated":"2022-01-06T07:01:09Z","article_type":"original","intvolume":"        42","date_created":"2018-09-20T12:42:40Z","keyword":["Molecular beam epitaxy","Focused ion beam","Self-assembled quantum dot","Electroluminescence"],"type":"journal_article","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"287"}],"issue":"10","publication":"Physica E: Low-dimensional Systems and Nanostructures","abstract":[{"lang":"eng","text":"An intentional positioning of optically active quantum dots using site-selective growth by a combination of molecular beam epitaxy (MBE) and focused ion beam (FIB) implantation in an all-ultra-high-vacuum (UHV) setup has been successfully demonstrated. A square array of periodic holes on GaAs substrate was fabricated with FIB of 30 keV ions followed by an in situ annealing step. Subsequently, the patterned holes were overgrown with an optimized amount of InAs in order to achieve site-selective growth of the QDs on the patterned holes. Under well-optimized conditions, a selectivity of single quantum dot growth in the patterned holes of 52% was achieved. Thereafter, carrier injection and subsequent radiative recombination from the positioned InAs/GaAs self-assembled QDs was investigated by embedding the QDs in the intrinsic part of a GaAs-based p–i–n junction device. Electroluminescence spectra taken at 77 K show interband transitions up to the fifth excited state from the QDs."}],"page":"2749-2752","publisher":"Elsevier BV","_id":"4551","user_id":"20798","volume":42,"status":"public","citation":{"ama":"Mehta M, Reuter D, Melnikov A, et al. Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2010;42(10):2749-2752. doi:<a href=\"https://doi.org/10.1016/j.physe.2009.12.053\">10.1016/j.physe.2009.12.053</a>","bibtex":"@article{Mehta_Reuter_Melnikov_Wieck_Michaelis de Vasconcellos_Baumgarten_Zrenner_Meier_2010, title={Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode}, volume={42}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2009.12.053\">10.1016/j.physe.2009.12.053</a>}, number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures}, publisher={Elsevier BV}, author={Mehta, Minisha and Reuter, Dirk and Melnikov, Alexander and Wieck, Andreas D. and Michaelis de Vasconcellos, Steffen and Baumgarten, Tim and Zrenner, Artur and Meier, Cedrik}, year={2010}, pages={2749–2752} }","mla":"Mehta, Minisha, et al. “Intentionally Positioned Self-Assembled InAs Quantum Dots in an Electroluminescent p–i–n Junction Diode.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, vol. 42, no. 10, Elsevier BV, 2010, pp. 2749–52, doi:<a href=\"https://doi.org/10.1016/j.physe.2009.12.053\">10.1016/j.physe.2009.12.053</a>.","chicago":"Mehta, Minisha, Dirk Reuter, Alexander Melnikov, Andreas D. Wieck, Steffen Michaelis de Vasconcellos, Tim Baumgarten, Artur Zrenner, and Cedrik Meier. “Intentionally Positioned Self-Assembled InAs Quantum Dots in an Electroluminescent p–i–n Junction Diode.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i> 42, no. 10 (2010): 2749–52. <a href=\"https://doi.org/10.1016/j.physe.2009.12.053\">https://doi.org/10.1016/j.physe.2009.12.053</a>.","short":"M. Mehta, D. Reuter, A. Melnikov, A.D. Wieck, S. Michaelis de Vasconcellos, T. Baumgarten, A. Zrenner, C. Meier, Physica E: Low-Dimensional Systems and Nanostructures 42 (2010) 2749–2752.","apa":"Mehta, M., Reuter, D., Melnikov, A., Wieck, A. D., Michaelis de Vasconcellos, S., Baumgarten, T., … Meier, C. (2010). Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, <i>42</i>(10), 2749–2752. <a href=\"https://doi.org/10.1016/j.physe.2009.12.053\">https://doi.org/10.1016/j.physe.2009.12.053</a>","ieee":"M. Mehta <i>et al.</i>, “Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, vol. 42, no. 10, pp. 2749–2752, 2010."}},{"page":"2521-2523","_id":"4552","publisher":"Elsevier BV","user_id":"49428","volume":42,"status":"public","citation":{"mla":"Panfilova, M., et al. “Resonant Photocurrent-Spectroscopy of Individual CdSe Quantum Dots.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, vol. 42, no. 10, Elsevier BV, 2010, pp. 2521–23, doi:<a href=\"https://doi.org/10.1016/j.physe.2010.01.013\">10.1016/j.physe.2010.01.013</a>.","ama":"Panfilova M, Michaelis de Vasconcellos S, Pawlis A, Lischka K, Zrenner A. Resonant photocurrent-spectroscopy of individual CdSe quantum dots. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2010;42(10):2521-2523. doi:<a href=\"https://doi.org/10.1016/j.physe.2010.01.013\">10.1016/j.physe.2010.01.013</a>","bibtex":"@article{Panfilova_Michaelis de Vasconcellos_Pawlis_Lischka_Zrenner_2010, title={Resonant photocurrent-spectroscopy of individual CdSe quantum dots}, volume={42}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2010.01.013\">10.1016/j.physe.2010.01.013</a>}, number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures}, publisher={Elsevier BV}, author={Panfilova, M. and Michaelis de Vasconcellos, S. and Pawlis, A. and Lischka, K. and Zrenner, Artur}, year={2010}, pages={2521–2523} }","apa":"Panfilova, M., Michaelis de Vasconcellos, S., Pawlis, A., Lischka, K., &#38; Zrenner, A. (2010). Resonant photocurrent-spectroscopy of individual CdSe quantum dots. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, <i>42</i>(10), 2521–2523. <a href=\"https://doi.org/10.1016/j.physe.2010.01.013\">https://doi.org/10.1016/j.physe.2010.01.013</a>","ieee":"M. Panfilova, S. Michaelis de Vasconcellos, A. Pawlis, K. Lischka, and A. Zrenner, “Resonant photocurrent-spectroscopy of individual CdSe quantum dots,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, vol. 42, no. 10, pp. 2521–2523, 2010.","short":"M. Panfilova, S. Michaelis de Vasconcellos, A. Pawlis, K. Lischka, A. Zrenner, Physica E: Low-Dimensional Systems and Nanostructures 42 (2010) 2521–2523.","chicago":"Panfilova, M., S. Michaelis de Vasconcellos, A. Pawlis, K. Lischka, and Artur Zrenner. “Resonant Photocurrent-Spectroscopy of Individual CdSe Quantum Dots.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i> 42, no. 10 (2010): 2521–23. <a href=\"https://doi.org/10.1016/j.physe.2010.01.013\">https://doi.org/10.1016/j.physe.2010.01.013</a>."},"language":[{"iso":"eng"}],"doi":"10.1016/j.physe.2010.01.013","year":"2010","title":"Resonant photocurrent-spectroscopy of individual CdSe quantum dots","publication_identifier":{"issn":["1386-9477"]},"author":[{"full_name":"Panfilova, M.","last_name":"Panfilova","first_name":"M."},{"last_name":"Michaelis de Vasconcellos","first_name":"S.","full_name":"Michaelis de Vasconcellos, S."},{"full_name":"Pawlis, A.","first_name":"A.","last_name":"Pawlis"},{"last_name":"Lischka","first_name":"K.","full_name":"Lischka, K."},{"last_name":"Zrenner","first_name":"Artur","orcid":"0000-0002-5190-0944","full_name":"Zrenner, Artur","id":"606"}],"publication_status":"published","date_updated":"2022-01-06T07:01:09Z","article_type":"original","intvolume":"        42","date_created":"2018-09-20T12:45:46Z","type":"journal_article","keyword":["CdSe/ZnSe quantum dots","Photodiode","Quantum confined Stark Effect","Photocurrent","II–VI Semiconductors"],"department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"publication":"Physica E: Low-dimensional Systems and Nanostructures","issue":"10","abstract":[{"lang":"eng","text":"Here we report on investigations on CdSe quantum dots incorporated in ZnSe based Schottky photodiodes with near-field shadow masks. Photoluminescence and photocurrent of individual quantum dots were studied as a function of the applied bias voltage. The exciton energy of the quantum dot ground state transition was shifted to the excitation energy by using the Stark effect tuning via an external bias voltage. Under the condition of resonance with the laser excitation energy we observed a resonant photocurrent signal due to the tunnelling of carriers out of the quantum dots at electric fields above 500 kV/cm."}]},{"editor":[{"first_name":"Mark I.","last_name":"Stockman","full_name":"Stockman, Mark I."}],"doi":"10.1117/12.860190","user_id":"30525","_id":"7251","publisher":"SPIE","language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:03:30Z","publication_status":"published","author":[{"full_name":"Ishikawa, Atsushi","last_name":"Ishikawa","first_name":"Atsushi"},{"full_name":"Oulton, Rupert F.","first_name":"Rupert F.","last_name":"Oulton"},{"full_name":"Zentgraf, Thomas","orcid":"0000-0002-8662-1101","first_name":"Thomas","last_name":"Zentgraf","id":"30525"},{"full_name":"Zhang, Xiang","last_name":"Zhang","first_name":"Xiang"}],"title":"Extremely low-loss slow-light modes in plasmonic dielectric hybrid systems","year":"2010","status":"public","department":[{"_id":"15"},{"_id":"230"}],"type":"conference","date_created":"2019-01-30T07:22:54Z","citation":{"mla":"Ishikawa, Atsushi, et al. “Extremely Low-Loss Slow-Light Modes in Plasmonic Dielectric Hybrid Systems.” <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>, edited by Mark I. Stockman, SPIE, 2010, doi:<a href=\"https://doi.org/10.1117/12.860190\">10.1117/12.860190</a>.","apa":"Ishikawa, A., Oulton, R. F., Zentgraf, T., &#38; Zhang, X. (2010). Extremely low-loss slow-light modes in plasmonic dielectric hybrid systems. In M. I. Stockman (Ed.), <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>. SPIE. <a href=\"https://doi.org/10.1117/12.860190\">https://doi.org/10.1117/12.860190</a>","ieee":"A. Ishikawa, R. F. Oulton, T. Zentgraf, and X. Zhang, “Extremely low-loss slow-light modes in plasmonic dielectric hybrid systems,” in <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>, 2010.","chicago":"Ishikawa, Atsushi, Rupert F. Oulton, Thomas Zentgraf, and Xiang Zhang. “Extremely Low-Loss Slow-Light Modes in Plasmonic Dielectric Hybrid Systems.” In <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>, edited by Mark I. Stockman. SPIE, 2010. <a href=\"https://doi.org/10.1117/12.860190\">https://doi.org/10.1117/12.860190</a>.","short":"A. Ishikawa, R.F. Oulton, T. Zentgraf, X. Zhang, in: M.I. Stockman (Ed.), Plasmonics: Metallic Nanostructures and Their Optical Properties VIII, SPIE, 2010.","ama":"Ishikawa A, Oulton RF, Zentgraf T, Zhang X. Extremely low-loss slow-light modes in plasmonic dielectric hybrid systems. In: Stockman MI, ed. <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>. SPIE; 2010. doi:<a href=\"https://doi.org/10.1117/12.860190\">10.1117/12.860190</a>","bibtex":"@inproceedings{Ishikawa_Oulton_Zentgraf_Zhang_2010, title={Extremely low-loss slow-light modes in plasmonic dielectric hybrid systems}, DOI={<a href=\"https://doi.org/10.1117/12.860190\">10.1117/12.860190</a>}, booktitle={Plasmonics: Metallic Nanostructures and Their Optical Properties VIII}, publisher={SPIE}, author={Ishikawa, Atsushi and Oulton, Rupert F. and Zentgraf, Thomas and Zhang, Xiang}, editor={Stockman, Mark I.Editor}, year={2010} }"},"publication":"Plasmonics: Metallic Nanostructures and Their Optical Properties VIII"},{"_id":"7252","language":[{"iso":"eng"}],"publisher":"SPIE","editor":[{"full_name":"Stockman, Mark I.","first_name":"Mark I.","last_name":"Stockman"}],"doi":"10.1117/12.859136","user_id":"30525","author":[{"full_name":"Sorger, Volker J.","last_name":"Sorger","first_name":"Volker J."},{"full_name":"Oulton, Rupert F.","first_name":"Rupert F.","last_name":"Oulton"},{"id":"30525","full_name":"Zentgraf, Thomas","last_name":"Zentgraf","first_name":"Thomas","orcid":"0000-0002-8662-1101"},{"full_name":"Ma, Renmin","first_name":"Renmin","last_name":"Ma"},{"full_name":"Gladden, Christopher","first_name":"Christopher","last_name":"Gladden"},{"full_name":"Dai, Lun","first_name":"Lun","last_name":"Dai"},{"first_name":"Guy","last_name":"Bartal","full_name":"Bartal, Guy"},{"first_name":"Xiang","last_name":"Zhang","full_name":"Zhang, Xiang"}],"year":"2010","title":"Semiconductor plasmon laser","status":"public","date_updated":"2022-01-06T07:03:30Z","publication_status":"published","date_created":"2019-01-30T07:24:06Z","department":[{"_id":"15"},{"_id":"230"}],"type":"conference","citation":{"mla":"Sorger, Volker J., et al. “Semiconductor Plasmon Laser.” <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>, edited by Mark I. Stockman, SPIE, 2010, doi:<a href=\"https://doi.org/10.1117/12.859136\">10.1117/12.859136</a>.","ama":"Sorger VJ, Oulton RF, Zentgraf T, et al. Semiconductor plasmon laser. In: Stockman MI, ed. <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>. SPIE; 2010. doi:<a href=\"https://doi.org/10.1117/12.859136\">10.1117/12.859136</a>","bibtex":"@inproceedings{Sorger_Oulton_Zentgraf_Ma_Gladden_Dai_Bartal_Zhang_2010, title={Semiconductor plasmon laser}, DOI={<a href=\"https://doi.org/10.1117/12.859136\">10.1117/12.859136</a>}, booktitle={Plasmonics: Metallic Nanostructures and Their Optical Properties VIII}, publisher={SPIE}, author={Sorger, Volker J. and Oulton, Rupert F. and Zentgraf, Thomas and Ma, Renmin and Gladden, Christopher and Dai, Lun and Bartal, Guy and Zhang, Xiang}, editor={Stockman, Mark I.Editor}, year={2010} }","apa":"Sorger, V. J., Oulton, R. F., Zentgraf, T., Ma, R., Gladden, C., Dai, L., … Zhang, X. (2010). Semiconductor plasmon laser. In M. I. Stockman (Ed.), <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>. SPIE. <a href=\"https://doi.org/10.1117/12.859136\">https://doi.org/10.1117/12.859136</a>","ieee":"V. J. Sorger <i>et al.</i>, “Semiconductor plasmon laser,” in <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>, 2010.","chicago":"Sorger, Volker J., Rupert F. Oulton, Thomas Zentgraf, Renmin Ma, Christopher Gladden, Lun Dai, Guy Bartal, and Xiang Zhang. “Semiconductor Plasmon Laser.” In <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>, edited by Mark I. Stockman. SPIE, 2010. <a href=\"https://doi.org/10.1117/12.859136\">https://doi.org/10.1117/12.859136</a>.","short":"V.J. Sorger, R.F. Oulton, T. Zentgraf, R. Ma, C. Gladden, L. Dai, G. Bartal, X. Zhang, in: M.I. Stockman (Ed.), Plasmonics: Metallic Nanostructures and Their Optical Properties VIII, SPIE, 2010."},"publication":"Plasmonics: Metallic Nanostructures and Their Optical Properties VIII"},{"citation":{"ieee":"M. Mehta and C. Meier, “Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals,” <i>Journal of The Electrochemical Society</i>, vol. 158, no. 2, 2010.","apa":"Mehta, M., &#38; Meier, C. (2010). Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals. <i>Journal of The Electrochemical Society</i>, <i>158</i>(2). <a href=\"https://doi.org/10.1149/1.3519999\">https://doi.org/10.1149/1.3519999</a>","chicago":"Mehta, M., and Cedrik Meier. “Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals.” <i>Journal of The Electrochemical Society</i> 158, no. 2 (2010). <a href=\"https://doi.org/10.1149/1.3519999\">https://doi.org/10.1149/1.3519999</a>.","short":"M. Mehta, C. Meier, Journal of The Electrochemical Society 158 (2010).","mla":"Mehta, M., and Cedrik Meier. “Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals.” <i>Journal of The Electrochemical Society</i>, vol. 158, no. 2, H119, The Electrochemical Society, 2010, doi:<a href=\"https://doi.org/10.1149/1.3519999\">10.1149/1.3519999</a>.","bibtex":"@article{Mehta_Meier_2010, title={Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals}, volume={158}, DOI={<a href=\"https://doi.org/10.1149/1.3519999\">10.1149/1.3519999</a>}, number={2H119}, journal={Journal of The Electrochemical Society}, publisher={The Electrochemical Society}, author={Mehta, M. and Meier, Cedrik}, year={2010} }","ama":"Mehta M, Meier C. Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals. <i>Journal of The Electrochemical Society</i>. 2010;158(2). doi:<a href=\"https://doi.org/10.1149/1.3519999\">10.1149/1.3519999</a>"},"status":"public","_id":"7494","publisher":"The Electrochemical Society","user_id":"20798","volume":158,"issue":"2","publication":"Journal of The Electrochemical Society","date_created":"2019-02-04T14:35:22Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"287"}],"title":"Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals","year":"2010","author":[{"full_name":"Mehta, M.","last_name":"Mehta","first_name":"M."},{"id":"20798","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572","first_name":"Cedrik","full_name":"Meier, Cedrik"}],"publication_identifier":{"issn":["0013-4651"]},"publication_status":"published","date_updated":"2022-01-06T07:03:39Z","intvolume":"       158","article_number":"H119","language":[{"iso":"eng"}],"doi":"10.1149/1.3519999"},{"citation":{"apa":"Theis, J., Geller, M., Lorke, A., Wiggers, H., Wieck, A., &#38; Meier, C. (2010). Electroluminescence from silicon nanoparticles fabricated from the gas phase. <i>Nanotechnology</i>, <i>21</i>(45). <a href=\"https://doi.org/10.1088/0957-4484/21/45/455201\">https://doi.org/10.1088/0957-4484/21/45/455201</a>","mla":"Theis, Jens, et al. “Electroluminescence from Silicon Nanoparticles Fabricated from the Gas Phase.” <i>Nanotechnology</i>, vol. 21, no. 45, 455201, IOP Publishing, 2010, doi:<a href=\"https://doi.org/10.1088/0957-4484/21/45/455201\">10.1088/0957-4484/21/45/455201</a>.","ieee":"J. Theis, M. Geller, A. Lorke, H. Wiggers, A. Wieck, and C. Meier, “Electroluminescence from silicon nanoparticles fabricated from the gas phase,” <i>Nanotechnology</i>, vol. 21, no. 45, 2010.","chicago":"Theis, Jens, Martin Geller, Axel Lorke, Hartmut Wiggers, Andreas Wieck, and Cedrik Meier. “Electroluminescence from Silicon Nanoparticles Fabricated from the Gas Phase.” <i>Nanotechnology</i> 21, no. 45 (2010). <a href=\"https://doi.org/10.1088/0957-4484/21/45/455201\">https://doi.org/10.1088/0957-4484/21/45/455201</a>.","ama":"Theis J, Geller M, Lorke A, Wiggers H, Wieck A, Meier C. Electroluminescence from silicon nanoparticles fabricated from the gas phase. <i>Nanotechnology</i>. 2010;21(45). doi:<a href=\"https://doi.org/10.1088/0957-4484/21/45/455201\">10.1088/0957-4484/21/45/455201</a>","short":"J. Theis, M. Geller, A. Lorke, H. Wiggers, A. Wieck, C. Meier, Nanotechnology 21 (2010).","bibtex":"@article{Theis_Geller_Lorke_Wiggers_Wieck_Meier_2010, title={Electroluminescence from silicon nanoparticles fabricated from the gas phase}, volume={21}, DOI={<a href=\"https://doi.org/10.1088/0957-4484/21/45/455201\">10.1088/0957-4484/21/45/455201</a>}, number={45455201}, journal={Nanotechnology}, publisher={IOP Publishing}, author={Theis, Jens and Geller, Martin and Lorke, Axel and Wiggers, Hartmut and Wieck, Andreas and Meier, Cedrik}, year={2010} }"},"_id":"7496","publisher":"IOP Publishing","volume":21,"user_id":"20798","status":"public","date_created":"2019-02-04T14:39:19Z","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"287"}],"type":"journal_article","issue":"45","publication":"Nanotechnology","language":[{"iso":"eng"}],"article_number":"455201","doi":"10.1088/0957-4484/21/45/455201","author":[{"full_name":"Theis, Jens","last_name":"Theis","first_name":"Jens"},{"first_name":"Martin","last_name":"Geller","full_name":"Geller, Martin"},{"full_name":"Lorke, Axel","last_name":"Lorke","first_name":"Axel"},{"last_name":"Wiggers","first_name":"Hartmut","full_name":"Wiggers, Hartmut"},{"last_name":"Wieck","first_name":"Andreas","full_name":"Wieck, Andreas"},{"full_name":"Meier, Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","first_name":"Cedrik","last_name":"Meier","id":"20798"}],"publication_identifier":{"issn":["0957-4484","1361-6528"]},"year":"2010","title":"Electroluminescence from silicon nanoparticles fabricated from the gas phase","intvolume":"        21","publication_status":"published","date_updated":"2022-01-06T07:03:39Z"},{"file_date_updated":"2018-08-27T10:34:26Z","citation":{"ama":"Grodecka-Grad A, Förstner J. Phonon-mediated relaxation in doped quantum dot molecules. <i>Journal of Physics: Conference Series</i>. 2010;245. doi:<a href=\"https://doi.org/10.1088/1742-6596/245/1/012035\">10.1088/1742-6596/245/1/012035</a>","bibtex":"@article{Grodecka-Grad_Förstner_2010, title={Phonon-mediated relaxation in doped quantum dot molecules}, volume={245}, DOI={<a href=\"https://doi.org/10.1088/1742-6596/245/1/012035\">10.1088/1742-6596/245/1/012035</a>}, number={012035}, journal={Journal of Physics: Conference Series}, publisher={IOP Publishing}, author={Grodecka-Grad, Anna and Förstner, Jens}, year={2010} }","mla":"Grodecka-Grad, Anna, and Jens Förstner. “Phonon-Mediated Relaxation in Doped Quantum Dot Molecules.” <i>Journal of Physics: Conference Series</i>, vol. 245, 012035, IOP Publishing, 2010, doi:<a href=\"https://doi.org/10.1088/1742-6596/245/1/012035\">10.1088/1742-6596/245/1/012035</a>.","chicago":"Grodecka-Grad, Anna, and Jens Förstner. “Phonon-Mediated Relaxation in Doped Quantum Dot Molecules.” <i>Journal of Physics: Conference Series</i> 245 (2010). <a href=\"https://doi.org/10.1088/1742-6596/245/1/012035\">https://doi.org/10.1088/1742-6596/245/1/012035</a>.","short":"A. Grodecka-Grad, J. Förstner, Journal of Physics: Conference Series 245 (2010).","apa":"Grodecka-Grad, A., &#38; Förstner, J. (2010). Phonon-mediated relaxation in doped quantum dot molecules. <i>Journal of Physics: Conference Series</i>, <i>245</i>. <a href=\"https://doi.org/10.1088/1742-6596/245/1/012035\">https://doi.org/10.1088/1742-6596/245/1/012035</a>","ieee":"A. Grodecka-Grad and J. Förstner, “Phonon-mediated relaxation in doped quantum dot molecules,” <i>Journal of Physics: Conference Series</i>, vol. 245, 2010."},"status":"public","has_accepted_license":"1","_id":"4129","publisher":"IOP Publishing","user_id":"55706","ddc":["530"],"volume":245,"publication":"Journal of Physics: Conference Series","abstract":[{"lang":"eng","text":"We study a single quantum dot molecule doped with one electron in the presence of electron-phonon coupling. Both diagonal and off-diagonal interactions representing real and virtual processes with acoustic phonons via deformation potential and piezoelectric coupling are taken into account. We employ a non-perturbative quantum kinetic theory and show that the phonon-mediated relaxation is dominated by an electron tunneling on a picosecond time scale.A dependence of the relaxation on the temperature and the strength of the tunneling coupling is analyzed."}],"file":[{"success":1,"content_type":"application/pdf","file_id":"4130","date_updated":"2018-08-27T10:34:26Z","relation":"main_file","access_level":"closed","file_size":896613,"file_name":"2010 Grodecka-Grad,Förstner_Phonon-mediated relaxation in doped quantum dot molecules.pdf","date_created":"2018-08-27T10:34:26Z","creator":"hclaudia"}],"date_created":"2018-08-27T10:33:04Z","keyword":["tet_topic_qd"],"type":"journal_article","department":[{"_id":"15"}],"year":"2010","title":"Phonon-mediated relaxation in doped quantum dot molecules","author":[{"full_name":"Grodecka-Grad, Anna","first_name":"Anna","last_name":"Grodecka-Grad"},{"full_name":"Förstner, Jens","orcid":"0000-0001-7059-9862","last_name":"Förstner","first_name":"Jens","id":"158"}],"publication_identifier":{"issn":["1742-6596"]},"publication_status":"published","date_updated":"2022-01-06T07:00:22Z","article_type":"original","intvolume":"       245","article_number":"012035","language":[{"iso":"eng"}],"doi":"10.1088/1742-6596/245/1/012035"},{"file_date_updated":"2018-08-27T12:35:32Z","citation":{"ama":"Kemper RM, Weinl M, Mietze C, et al. Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates. <i>Journal of Crystal Growth</i>. 2010;323(1):84-87. doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2010.12.042\">10.1016/j.jcrysgro.2010.12.042</a>","bibtex":"@article{Kemper_Weinl_Mietze_Häberlen_Schupp_Tschumak_Lindner_Lischka_As_2010, title={Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates}, volume={323}, DOI={<a href=\"https://doi.org/10.1016/j.jcrysgro.2010.12.042\">10.1016/j.jcrysgro.2010.12.042</a>}, number={1}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Kemper, R.M. and Weinl, M. and Mietze, C. and Häberlen, M. and Schupp, T. and Tschumak, E. and Lindner, Jörg and Lischka, K. and As, Donald }, year={2010}, pages={84–87} }","mla":"Kemper, R. M., et al. “Growth of Cubic GaN on Nano-Patterned 3C-SiC/Si (001) Substrates.” <i>Journal of Crystal Growth</i>, vol. 323, no. 1, Elsevier BV, 2010, pp. 84–87, doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2010.12.042\">10.1016/j.jcrysgro.2010.12.042</a>.","short":"R.M. Kemper, M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak, J. Lindner, K. Lischka, D. As, Journal of Crystal Growth 323 (2010) 84–87.","chicago":"Kemper, R.M., M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak, Jörg Lindner, K. Lischka, and Donald  As. “Growth of Cubic GaN on Nano-Patterned 3C-SiC/Si (001) Substrates.” <i>Journal of Crystal Growth</i> 323, no. 1 (2010): 84–87. <a href=\"https://doi.org/10.1016/j.jcrysgro.2010.12.042\">https://doi.org/10.1016/j.jcrysgro.2010.12.042</a>.","apa":"Kemper, R. M., Weinl, M., Mietze, C., Häberlen, M., Schupp, T., Tschumak, E., … As, D. (2010). Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates. <i>Journal of Crystal Growth</i>, <i>323</i>(1), 84–87. <a href=\"https://doi.org/10.1016/j.jcrysgro.2010.12.042\">https://doi.org/10.1016/j.jcrysgro.2010.12.042</a>","ieee":"R. M. Kemper <i>et al.</i>, “Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates,” <i>Journal of Crystal Growth</i>, vol. 323, no. 1, pp. 84–87, 2010."},"has_accepted_license":"1","status":"public","ddc":["530"],"user_id":"55706","volume":323,"page":"84-87","publisher":"Elsevier BV","_id":"4144","abstract":[{"lang":"eng","text":"Non-polar relaxed cubic GaN was grown by molecular beam epitaxy (MBE) on nano-patterned 3C-SiC/Si \r\n(0 0 1)substrates with negligible hexagonal content and less defect density than in planar cubic GaN layers.Nano-patterning of 3C-SiC/Si(001) is achieved by self-ordered colloidal masks for the first time. The method presented here offers the possibility to create nano-patterned cubic GaN without the need for a GaN etching process andt hus isa potential alternative to the conventional top–down fabrication techniques."}],"issue":"1","publication":"Journal of Crystal Growth","type":"journal_article","department":[{"_id":"15"},{"_id":"286"}],"file":[{"date_updated":"2018-08-27T12:35:32Z","relation":"main_file","access_level":"closed","file_size":665964,"file_name":"Growth of cubic GaN on nano-patterned 3C-SiC (001) substrates.pdf","content_type":"application/pdf","success":1,"file_id":"4145","creator":"hclaudia","date_created":"2018-08-27T12:35:32Z"}],"date_created":"2018-08-27T12:34:33Z","date_updated":"2022-01-06T07:00:24Z","publication_status":"published","intvolume":"       323","article_type":"original","year":"2010","title":"Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates","publication_identifier":{"issn":["0022-0248"]},"author":[{"last_name":"Kemper","first_name":"R.M.","full_name":"Kemper, R.M."},{"last_name":"Weinl","first_name":"M.","full_name":"Weinl, M."},{"full_name":"Mietze, C.","last_name":"Mietze","first_name":"C."},{"first_name":"M.","last_name":"Häberlen","full_name":"Häberlen, M."},{"full_name":"Schupp, T.","last_name":"Schupp","first_name":"T."},{"last_name":"Tschumak","first_name":"E.","full_name":"Tschumak, E."},{"last_name":"Lindner","first_name":"Jörg","full_name":"Lindner, Jörg","id":"20797"},{"full_name":"Lischka, K.","first_name":"K.","last_name":"Lischka"},{"last_name":"As","first_name":"Donald ","full_name":"As, Donald "}],"doi":"10.1016/j.jcrysgro.2010.12.042","language":[{"iso":"eng"}]},{"abstract":[{"lang":"eng","text":"Nanosphere lithography (NSL) masks consisting of mono- or double-layers of polystyrene (PS) nano-beads are fabricated on silicon exploiting the self-organization of PS particles during the controlled drying of a colloidal suspension on a surface. The shape changes and shrinkage of PS sphere masks upon treatment in an air plasma are studied as a function of initial sphere size, plasma power and treatment time. The influence of several experimental parameters, including the plasma induced temperature rise, are analysed using scanning and transmission electron microscopy. It is demonstrated that a variety of new intriguing nanopatterns can be generated on silicon surfaces by the combination of NSL and plasma techniques, largely broadening the variety of patterns available so far by NSL."}],"citation":{"short":"D. Gogel, M. Weinl, J. Lindner, B. Stritzker, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 12 (2010) 740–744.","chicago":"Gogel, D., M. Weinl, Jörg Lindner, and B. Stritzker. “Plasma Modification of Nanosphere Lithography Masks Made of Polystyrene Beads.” <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i> 12, no. 3 (2010): 740–44.","apa":"Gogel, D., Weinl, M., Lindner, J., &#38; Stritzker, B. (2010). Plasma modification of nanosphere lithography masks made of polystyrene beads. <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i>, <i>12</i>(3), 740–744.","ieee":"D. Gogel, M. Weinl, J. Lindner, and B. Stritzker, “Plasma modification of nanosphere lithography masks made of polystyrene beads,” <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i>, vol. 12, no. 3, pp. 740–744, 2010.","ama":"Gogel D, Weinl M, Lindner J, Stritzker B. Plasma modification of nanosphere lithography masks made of polystyrene beads. <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i>. 2010;12(3):740-744.","bibtex":"@article{Gogel_Weinl_Lindner_Stritzker_2010, title={Plasma modification of nanosphere lithography masks made of polystyrene beads}, volume={12}, number={3}, journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS}, author={Gogel, D. and Weinl, M. and Lindner, Jörg and Stritzker, B.}, year={2010}, pages={740–744} }","mla":"Gogel, D., et al. “Plasma Modification of Nanosphere Lithography Masks Made of Polystyrene Beads.” <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i>, vol. 12, no. 3, 2010, pp. 740–44."},"issue":"3","publication":"JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS","department":[{"_id":"286"},{"_id":"230"}],"type":"journal_article","date_created":"2018-08-27T13:29:28Z","article_type":"original","intvolume":"        12","date_updated":"2022-01-06T07:00:26Z","author":[{"full_name":"Gogel, D.","first_name":"D.","last_name":"Gogel"},{"full_name":"Weinl, M.","first_name":"M.","last_name":"Weinl"},{"id":"20797","first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg"},{"first_name":"B.","last_name":"Stritzker","full_name":"Stritzker, B."}],"status":"public","title":"Plasma modification of nanosphere lithography masks made of polystyrene beads","year":"2010","volume":12,"user_id":"55706","language":[{"iso":"eng"}],"_id":"4153","page":"740-744"},{"abstract":[{"lang":"eng","text":"A quantum dot molecule doped with a single electron in the presence of diagonal and off-diagonal carrierphonon\r\ncouplings is studied by means of a nonperturbative quantum kinetic theory. The interaction with acoustic phonons by deformation potential and piezoelectric coupling is taken into account. We show that the phonon-mediated relaxation is fast on a picosecond time scale and is dominated by the usually neglected off-diagonal coupling to the lattice degrees of freedom leading to phonon-assisted electron tunneling. We show that in the parameter regime of current electrical and optical experiments, the microscopic non-Markovian theory has to be employed."}],"issue":"11","publication":"Physical Review B","department":[{"_id":"15"}],"keyword":["tet_topic_qd"],"type":"journal_article","date_created":"2018-08-28T08:57:24Z","file":[{"date_created":"2018-08-28T08:58:21Z","creator":"hclaudia","file_id":"4175","content_type":"application/pdf","file_name":"2010 Grodecka-Grad,Förstner_Theory of phonon-mediated relaxation in doped quantum dot molecules.pdf","file_size":680408,"access_level":"open_access","relation":"main_file","date_updated":"2018-09-04T19:58:41Z"}],"intvolume":"        81","article_type":"original","date_updated":"2022-01-06T07:00:29Z","publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"author":[{"full_name":"Grodecka-Grad, A.","first_name":"A.","last_name":"Grodecka-Grad"},{"full_name":"Förstner, Jens","orcid":"0000-0001-7059-9862","last_name":"Förstner","first_name":"Jens","id":"158"}],"year":"2010","title":"Theory of phonon-mediated relaxation in doped quantum dot molecules","doi":"10.1103/physrevb.81.115305","language":[{"iso":"eng"}],"article_number":"115305","citation":{"bibtex":"@article{Grodecka-Grad_Förstner_2010, title={Theory of phonon-mediated relaxation in doped quantum dot molecules}, volume={81}, DOI={<a href=\"https://doi.org/10.1103/physrevb.81.115305\">10.1103/physrevb.81.115305</a>}, number={11115305}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Grodecka-Grad, A. and Förstner, Jens}, year={2010} }","ama":"Grodecka-Grad A, Förstner J. Theory of phonon-mediated relaxation in doped quantum dot molecules. <i>Physical Review B</i>. 2010;81(11). doi:<a href=\"https://doi.org/10.1103/physrevb.81.115305\">10.1103/physrevb.81.115305</a>","mla":"Grodecka-Grad, A., and Jens Förstner. “Theory of Phonon-Mediated Relaxation in Doped Quantum Dot Molecules.” <i>Physical Review B</i>, vol. 81, no. 11, 115305, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.81.115305\">10.1103/physrevb.81.115305</a>.","chicago":"Grodecka-Grad, A., and Jens Förstner. “Theory of Phonon-Mediated Relaxation in Doped Quantum Dot Molecules.” <i>Physical Review B</i> 81, no. 11 (2010). <a href=\"https://doi.org/10.1103/physrevb.81.115305\">https://doi.org/10.1103/physrevb.81.115305</a>.","short":"A. Grodecka-Grad, J. Förstner, Physical Review B 81 (2010).","ieee":"A. Grodecka-Grad and J. Förstner, “Theory of phonon-mediated relaxation in doped quantum dot molecules,” <i>Physical Review B</i>, vol. 81, no. 11, 2010.","apa":"Grodecka-Grad, A., &#38; Förstner, J. (2010). Theory of phonon-mediated relaxation in doped quantum dot molecules. <i>Physical Review B</i>, <i>81</i>(11). <a href=\"https://doi.org/10.1103/physrevb.81.115305\">https://doi.org/10.1103/physrevb.81.115305</a>"},"file_date_updated":"2018-09-04T19:58:41Z","oa":"1","has_accepted_license":"1","status":"public","volume":81,"ddc":["530"],"user_id":"158","_id":"4174","publisher":"American Physical Society (APS)","urn":"41740"},{"file":[{"creator":"hclaudia","date_created":"2018-08-28T11:58:27Z","relation":"main_file","date_updated":"2018-08-28T11:58:27Z","file_name":"Non-polar cubic AlGaN-GaN HFET on Ar+ implanted 3C-SiC 001.pdf","access_level":"closed","file_size":277385,"file_id":"4195","success":1,"content_type":"application/pdf"}],"date_created":"2018-08-28T11:56:08Z","type":"journal_article","department":[{"_id":"15"},{"_id":"286"}],"publication":"Applied Physics Letters","issue":"25","abstract":[{"lang":"eng","text":"A heterojunction field-effect transistor (HFET) was fabricated of nonpolar cubic AlGaN/GaN grown on Ar+ implanted 3C–SiC (001) by molecular beam epitaxy. The device shows a clear field effect at positive bias voltages with V_th=0.6 V. The HFET output characteristics were calculated using ATLAS simulation program. The electron channel at the cubic AlGaN/GaN interface was detected by room temperature capacitance-voltage measurements."}],"article_number":"253501","language":[{"iso":"eng"}],"doi":"10.1063/1.3455066","title":"Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)","year":"2010","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"full_name":"Tschumak, E.","last_name":"Tschumak","first_name":"E."},{"first_name":"R.","last_name":"Granzner","full_name":"Granzner, R."},{"id":"20797","first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg"},{"full_name":"Schwierz, F.","last_name":"Schwierz","first_name":"F."},{"full_name":"Lischka, K.","first_name":"K.","last_name":"Lischka"},{"full_name":"Nagasawa, H.","last_name":"Nagasawa","first_name":"H."},{"last_name":"Abe","first_name":"M.","full_name":"Abe, M."},{"first_name":"Donald","last_name":"As","full_name":"As, Donald"}],"date_updated":"2022-01-06T07:00:33Z","publication_status":"published","intvolume":"        96","article_type":"original","file_date_updated":"2018-08-28T11:58:27Z","citation":{"apa":"Tschumak, E., Granzner, R., Lindner, J., Schwierz, F., Lischka, K., Nagasawa, H., … As, D. (2010). Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). <i>Applied Physics Letters</i>, <i>96</i>(25). <a href=\"https://doi.org/10.1063/1.3455066\">https://doi.org/10.1063/1.3455066</a>","mla":"Tschumak, E., et al. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor on Ar+ Implanted 3C–SiC (001).” <i>Applied Physics Letters</i>, vol. 96, no. 25, 253501, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3455066\">10.1063/1.3455066</a>.","ieee":"E. Tschumak <i>et al.</i>, “Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001),” <i>Applied Physics Letters</i>, vol. 96, no. 25, 2010.","short":"E. Tschumak, R. Granzner, J. Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, D. As, Applied Physics Letters 96 (2010).","ama":"Tschumak E, Granzner R, Lindner J, et al. Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). <i>Applied Physics Letters</i>. 2010;96(25). doi:<a href=\"https://doi.org/10.1063/1.3455066\">10.1063/1.3455066</a>","chicago":"Tschumak, E., R. Granzner, Jörg Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, and Donald As. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor on Ar+ Implanted 3C–SiC (001).” <i>Applied Physics Letters</i> 96, no. 25 (2010). <a href=\"https://doi.org/10.1063/1.3455066\">https://doi.org/10.1063/1.3455066</a>.","bibtex":"@article{Tschumak_Granzner_Lindner_Schwierz_Lischka_Nagasawa_Abe_As_2010, title={Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)}, volume={96}, DOI={<a href=\"https://doi.org/10.1063/1.3455066\">10.1063/1.3455066</a>}, number={25253501}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tschumak, E. and Granzner, R. and Lindner, Jörg and Schwierz, F. and Lischka, K. and Nagasawa, H. and Abe, M. and As, Donald}, year={2010} }"},"_id":"4194","publisher":"AIP Publishing","ddc":["530"],"user_id":"55706","volume":96,"status":"public","has_accepted_license":"1"},{"publisher":"American Physical Society (APS)","_id":"4200","volume":82,"user_id":"55706","ddc":["530"],"status":"public","has_accepted_license":"1","citation":{"mla":"Zdravkov, V. I., et al. “Reentrant Superconductivity in Superconductor/Ferromagnetic-Alloy Bilayers.” <i>Physical Review B</i>, vol. 82, no. 5, 054517, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.82.054517\">10.1103/physrevb.82.054517</a>.","bibtex":"@article{Zdravkov_Kehrle_Obermeier_Gsell_Schreck_Müller_Krug von Nidda_Lindner_Moosburger-Will_Nold_et al._2010, title={Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers}, volume={82}, DOI={<a href=\"https://doi.org/10.1103/physrevb.82.054517\">10.1103/physrevb.82.054517</a>}, number={5054517}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Zdravkov, V. I. and Kehrle, J. and Obermeier, G. and Gsell, S. and Schreck, M. and Müller, C. and Krug von Nidda, H.-A. and Lindner, Jörg and Moosburger-Will, J. and Nold, E. and et al.}, year={2010} }","ama":"Zdravkov VI, Kehrle J, Obermeier G, et al. Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers. <i>Physical Review B</i>. 2010;82(5). doi:<a href=\"https://doi.org/10.1103/physrevb.82.054517\">10.1103/physrevb.82.054517</a>","ieee":"V. I. Zdravkov <i>et al.</i>, “Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers,” <i>Physical Review B</i>, vol. 82, no. 5, 2010.","apa":"Zdravkov, V. I., Kehrle, J., Obermeier, G., Gsell, S., Schreck, M., Müller, C., … Tagirov, L. R. (2010). Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers. <i>Physical Review B</i>, <i>82</i>(5). <a href=\"https://doi.org/10.1103/physrevb.82.054517\">https://doi.org/10.1103/physrevb.82.054517</a>","short":"V.I. Zdravkov, J. Kehrle, G. Obermeier, S. Gsell, M. Schreck, C. Müller, H.-A. Krug von Nidda, J. Lindner, J. Moosburger-Will, E. Nold, R. Morari, V.V. Ryazanov, A.S. Sidorenko, S. Horn, R. Tidecks, L.R. Tagirov, Physical Review B 82 (2010).","chicago":"Zdravkov, V. I., J. Kehrle, G. Obermeier, S. Gsell, M. Schreck, C. Müller, H.-A. Krug von Nidda, et al. “Reentrant Superconductivity in Superconductor/Ferromagnetic-Alloy Bilayers.” <i>Physical Review B</i> 82, no. 5 (2010). <a href=\"https://doi.org/10.1103/physrevb.82.054517\">https://doi.org/10.1103/physrevb.82.054517</a>."},"file_date_updated":"2018-08-28T12:23:29Z","language":[{"iso":"eng"}],"article_number":"054517","doi":"10.1103/physrevb.82.054517","publication_identifier":{"issn":["1098-0121","1550-235X"]},"author":[{"first_name":"V. I.","last_name":"Zdravkov","full_name":"Zdravkov, V. I."},{"last_name":"Kehrle","first_name":"J.","full_name":"Kehrle, J."},{"full_name":"Obermeier, G.","first_name":"G.","last_name":"Obermeier"},{"full_name":"Gsell, S.","last_name":"Gsell","first_name":"S."},{"full_name":"Schreck, M.","first_name":"M.","last_name":"Schreck"},{"first_name":"C.","last_name":"Müller","full_name":"Müller, C."},{"full_name":"Krug von Nidda, H.-A.","first_name":"H.-A.","last_name":"Krug von Nidda"},{"id":"20797","full_name":"Lindner, Jörg","first_name":"Jörg","last_name":"Lindner"},{"full_name":"Moosburger-Will, J.","first_name":"J.","last_name":"Moosburger-Will"},{"last_name":"Nold","first_name":"E.","full_name":"Nold, E."},{"full_name":"Morari, R.","first_name":"R.","last_name":"Morari"},{"full_name":"Ryazanov, V. V.","last_name":"Ryazanov","first_name":"V. V."},{"full_name":"Sidorenko, A. S.","last_name":"Sidorenko","first_name":"A. S."},{"first_name":"S.","last_name":"Horn","full_name":"Horn, S."},{"last_name":"Tidecks","first_name":"R.","full_name":"Tidecks, R."},{"full_name":"Tagirov, L. R.","last_name":"Tagirov","first_name":"L. R."}],"year":"2010","title":"Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers","article_type":"original","intvolume":"        82","publication_status":"published","date_updated":"2022-01-06T07:00:34Z","date_created":"2018-08-28T12:22:11Z","file":[{"date_created":"2018-08-28T12:23:29Z","creator":"hclaudia","success":1,"content_type":"application/pdf","file_id":"4201","file_size":723266,"access_level":"closed","file_name":"Reentrant superconductivity in superconductor-ferromagnetic-alloy bilayers.pdf","date_updated":"2018-08-28T12:23:29Z","relation":"main_file"}],"department":[{"_id":"15"}],"type":"journal_article","publication":"Physical Review B","issue":"5","extern":"1","abstract":[{"text":"We studied the Fulde-Ferrell-Larkin-Ovchinnikov-type state established due to the proximity effect in superconducting\r\nNb/Cu_41Ni_59 bilayers. Using a special wedge-type deposition technique, series of 20–35\r\nsamples could be fabricated by magnetron sputtering during one run. The layer thickness of only a few\r\nnanometers, the composition of the alloy, and the quality of interfaces were controlled by Rutherford backscattering\r\nspectrometry, high-resolution transmission electron microscopy, and Auger spectroscopy. The magnetic\r\nproperties of the ferromagnetic alloy layer were characterized with superconducting quantum interference\r\ndevice magnetometry. These studies yield precise information about the thickness and demonstrate the homogeneity\r\nof the alloy composition and magnetic properties along the sample series. The dependencies of the\r\ncritical temperature on the Nb and Cu41Ni59 layer thickness, T_c(d_S) and T_c(d_F), were investigated for constant\r\nthickness d_F of the magnetic alloy layer and d_S of the superconducting layer, respectively. All types of\r\nnonmonotonic behaviors of T_c versus d_F predicted by the theory could be realized experimentally, from\r\nreentrant superconducting behavior with a broad extinction region to a slight suppression of superconductivity\r\nwith a shallow minimum. Even a double extinction of superconductivity was observed, giving evidence for the\r\nmultiple reentrant behavior predicted by theory. All critical temperature curves were fitted with suitable sets of\r\nparameters. Then, T_c(d_F) diagrams of a hypothetical ferromagnet/superconductor/ferromagnet spin-switch core\r\nstructure were calculated using these parameters. Finally, superconducting spin-switch fabrication issues are\r\ndiscussed in detail in view of the achieved results.","lang":"eng"}]},{"publication_status":"published","date_updated":"2022-01-06T07:00:34Z","article_type":"original","intvolume":"       107","title":"Characterization of unintentional doping in nonpolar GaN","year":"2010","publication_identifier":{"issn":["0021-8979","1089-7550"]},"author":[{"full_name":"Zhu, Tongtong","first_name":"Tongtong","last_name":"Zhu"},{"first_name":"Carol F.","last_name":"Johnston","full_name":"Johnston, Carol F."},{"last_name":"Häberlen","first_name":"Maik","full_name":"Häberlen, Maik"},{"full_name":"Kappers, Menno J.","first_name":"Menno J.","last_name":"Kappers"},{"first_name":"Rachel A.","last_name":"Oliver","full_name":"Oliver, Rachel A."}],"doi":"10.1063/1.3284944","article_number":"023503","language":[{"iso":"eng"}],"extern":"1","abstract":[{"text":"Unintentional doping in nonpolar a-plane \u0001112¯0\u0002 gallium nitride \u0001GaN\u0002 grown on r-plane \u000111¯02\u0002\r\nsapphire using a three-dimensional \u00013D\u0002–two-dimensional \u00012D\u0002 growth method has been\r\ncharacterized. For both 2D only and 3D–2D growth, the presence of an unintentionally doped region\r\nadjacent to the GaN/sapphire interface is observed by scanning capacitance microscopy \u0001SCM\u0002. The\r\naverage width of this unintentionally doped layer is found to increase with increasing 3D growth\r\ntime. By using an intentionally doped GaN:Si staircase structure for calibration, it is shown that the\r\nunintentionally doped region has an average carrier concentration of \u00012.5\u00010.3\u0002\u00021018 cm−3. SCM\r\nalso reveals the presence of unintentionally doped features extending at 60° from the GaN/sapphire\r\ninterface. The observation of decreasing carrier concentration with distance from the GaN/sapphire\r\ninterface along these features may suggest that the unintentional doping arises from oxygen\r\ndiffusion from the sapphire substrate. Low temperature cathodoluminescence spectra reveal\r\nemission peaks at 3.41 and 3.30 eV, which are believed to originate from basal plane stacking faults\r\n\u0001BSFs\u0002 and prismatic stacking faults \u0001PSFs\u0002, respectively. It is shown that the inclined features\r\nextending from the GaN/sapphire interface exhibit both enhanced BSF and PSF emission. We\r\nsuggest that enhanced unintentional doping occurs in regions around PSFs. Where BSFs intersect\r\nthis doped material their emission is also enhanced due to reduced nonradiative recombination.\r\nTransmission electron microscopy confirms the presence of PSFs extending through the film at 60°\r\nfrom the GaN/sapphire interface.","lang":"eng"}],"issue":"2","publication":"Journal of Applied Physics","type":"journal_article","department":[{"_id":"15"}],"file":[{"file_id":"4203","content_type":"application/pdf","success":1,"file_name":"Characterization of unintentional doping in nonpolar GaN.pdf","file_size":688753,"access_level":"closed","relation":"main_file","date_updated":"2018-08-28T12:28:22Z","date_created":"2018-08-28T12:28:22Z","creator":"hclaudia"}],"date_created":"2018-08-28T12:27:34Z","has_accepted_license":"1","status":"public","user_id":"55706","ddc":["530"],"volume":107,"_id":"4202","publisher":"AIP Publishing","file_date_updated":"2018-08-28T12:28:22Z","citation":{"mla":"Zhu, Tongtong, et al. “Characterization of Unintentional Doping in Nonpolar GaN.” <i>Journal of Applied Physics</i>, vol. 107, no. 2, 023503, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3284944\">10.1063/1.3284944</a>.","ama":"Zhu T, Johnston CF, Häberlen M, Kappers MJ, Oliver RA. Characterization of unintentional doping in nonpolar GaN. <i>Journal of Applied Physics</i>. 2010;107(2). doi:<a href=\"https://doi.org/10.1063/1.3284944\">10.1063/1.3284944</a>","bibtex":"@article{Zhu_Johnston_Häberlen_Kappers_Oliver_2010, title={Characterization of unintentional doping in nonpolar GaN}, volume={107}, DOI={<a href=\"https://doi.org/10.1063/1.3284944\">10.1063/1.3284944</a>}, number={2023503}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Zhu, Tongtong and Johnston, Carol F. and Häberlen, Maik and Kappers, Menno J. and Oliver, Rachel A.}, year={2010} }","apa":"Zhu, T., Johnston, C. F., Häberlen, M., Kappers, M. J., &#38; Oliver, R. A. (2010). Characterization of unintentional doping in nonpolar GaN. <i>Journal of Applied Physics</i>, <i>107</i>(2). <a href=\"https://doi.org/10.1063/1.3284944\">https://doi.org/10.1063/1.3284944</a>","ieee":"T. Zhu, C. F. Johnston, M. Häberlen, M. J. Kappers, and R. A. Oliver, “Characterization of unintentional doping in nonpolar GaN,” <i>Journal of Applied Physics</i>, vol. 107, no. 2, 2010.","chicago":"Zhu, Tongtong, Carol F. Johnston, Maik Häberlen, Menno J. Kappers, and Rachel A. Oliver. “Characterization of Unintentional Doping in Nonpolar GaN.” <i>Journal of Applied Physics</i> 107, no. 2 (2010). <a href=\"https://doi.org/10.1063/1.3284944\">https://doi.org/10.1063/1.3284944</a>.","short":"T. Zhu, C.F. Johnston, M. Häberlen, M.J. Kappers, R.A. Oliver, Journal of Applied Physics 107 (2010)."}},{"citation":{"short":"F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W.G. Schmidt, E. Rauls, Physical Review B 82 (2010).","chicago":"Zirkelbach, F., B. Stritzker, K. Nordlund, Jörg Lindner, W. G. Schmidt, and E. Rauls. “Defects in Carbon Implanted Silicon Calculated by Classical Potentials and First-Principles Methods.” <i>Physical Review B</i> 82, no. 9 (2010). <a href=\"https://doi.org/10.1103/physrevb.82.094110\">https://doi.org/10.1103/physrevb.82.094110</a>.","apa":"Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J., Schmidt, W. G., &#38; Rauls, E. (2010). Defects in carbon implanted silicon calculated by classical potentials and first-principles methods. <i>Physical Review B</i>, <i>82</i>(9). <a href=\"https://doi.org/10.1103/physrevb.82.094110\">https://doi.org/10.1103/physrevb.82.094110</a>","ieee":"F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W. G. Schmidt, and E. Rauls, “Defects in carbon implanted silicon calculated by classical potentials and first-principles methods,” <i>Physical Review B</i>, vol. 82, no. 9, 2010.","ama":"Zirkelbach F, Stritzker B, Nordlund K, Lindner J, Schmidt WG, Rauls E. Defects in carbon implanted silicon calculated by classical potentials and first-principles methods. <i>Physical Review B</i>. 2010;82(9). doi:<a href=\"https://doi.org/10.1103/physrevb.82.094110\">10.1103/physrevb.82.094110</a>","bibtex":"@article{Zirkelbach_Stritzker_Nordlund_Lindner_Schmidt_Rauls_2010, title={Defects in carbon implanted silicon calculated by classical potentials and first-principles methods}, volume={82}, DOI={<a href=\"https://doi.org/10.1103/physrevb.82.094110\">10.1103/physrevb.82.094110</a>}, number={9094110}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Lindner, Jörg and Schmidt, W. G. and Rauls, E.}, year={2010} }","mla":"Zirkelbach, F., et al. “Defects in Carbon Implanted Silicon Calculated by Classical Potentials and First-Principles Methods.” <i>Physical Review B</i>, vol. 82, no. 9, 094110, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.82.094110\">10.1103/physrevb.82.094110</a>."},"file_date_updated":"2018-08-28T12:31:01Z","publisher":"American Physical Society (APS)","_id":"4204","volume":82,"user_id":"55706","ddc":["530"],"status":"public","has_accepted_license":"1","date_created":"2018-08-28T12:30:15Z","file":[{"date_created":"2018-08-28T12:31:01Z","creator":"hclaudia","success":1,"content_type":"application/pdf","file_id":"4205","date_updated":"2018-08-28T12:31:01Z","relation":"main_file","access_level":"closed","file_size":238023,"file_name":"Defects in Carbon implanted Silicon calculated by classical potentials and first principles methods.pdf"}],"department":[{"_id":"15"},{"_id":"286"}],"type":"journal_article","publication":"Physical Review B","issue":"9","abstract":[{"text":"A comparative theoretical investigation of carbon interstitials in silicon is presented. Calculations using\r\nclassical potentials are compared to first-principles density-functional theory calculations of the geometries,\r\nformation, and activation energies of the carbon dumbbell interstitial, showing the importance of a quantummechanical\r\ndescription of this system. In contrast to previous studies, the present first-principles calculations of\r\nthe interstitial carbon migration path yield an activation energy that excellently matches the experiment. The\r\nbond-centered interstitial configuration shows a net magnetization of two electrons, illustrating the need for\r\nspin-polarized calculations.","lang":"eng"}],"language":[{"iso":"eng"}],"article_number":"094110","doi":"10.1103/physrevb.82.094110","author":[{"last_name":"Zirkelbach","first_name":"F.","full_name":"Zirkelbach, F."},{"full_name":"Stritzker, B.","first_name":"B.","last_name":"Stritzker"},{"full_name":"Nordlund, K.","first_name":"K.","last_name":"Nordlund"},{"id":"20797","full_name":"Lindner, Jörg","first_name":"Jörg","last_name":"Lindner"},{"full_name":"Schmidt, W. G.","last_name":"Schmidt","first_name":"W. G."},{"first_name":"E.","last_name":"Rauls","full_name":"Rauls, E."}],"publication_identifier":{"issn":["1098-0121","1550-235X"]},"title":"Defects in carbon implanted silicon calculated by classical potentials and first-principles methods","year":"2010","article_type":"original","intvolume":"        82","publication_status":"published","date_updated":"2022-01-06T07:00:35Z"},{"user_id":"55706","_id":"4206","date_updated":"2022-01-06T07:00:35Z","title":"Advanced topics and applications of Transmission Electron Microscopy, Part I-II","year":"2010","status":"public","conference":{"location":"Universidad Autónoma de Madrid (Spain)","start_date":"2010-04-14","name":"Guest Lectures at Departamento de Fisica Applicada, Master de Materiales Avanzados y Nanotecnologias ","end_date":"2010-04-16"},"author":[{"last_name":"Lindner","first_name":"Jörg","full_name":"Lindner, Jörg","id":"20797"}],"type":"conference_abstract","department":[{"_id":"15"},{"_id":"286"}],"date_created":"2018-08-28T12:34:11Z","citation":{"apa":"Lindner, J. (2010). Advanced topics and applications of Transmission Electron Microscopy, Part I-II. Presented at the Guest Lectures at Departamento de Fisica Applicada, Master de Materiales Avanzados y Nanotecnologias , Universidad Autónoma de Madrid (Spain).","ieee":"J. Lindner, “Advanced topics and applications of Transmission Electron Microscopy, Part I-II,” presented at the Guest Lectures at Departamento de Fisica Applicada, Master de Materiales Avanzados y Nanotecnologias , Universidad Autónoma de Madrid (Spain), 2010.","chicago":"Lindner, Jörg. “Advanced Topics and Applications of Transmission Electron Microscopy, Part I-II,” 2010.","short":"J. Lindner, in: 2010.","mla":"Lindner, Jörg. <i>Advanced Topics and Applications of Transmission Electron Microscopy, Part I-II</i>. 2010.","ama":"Lindner J. Advanced topics and applications of Transmission Electron Microscopy, Part I-II. In: ; 2010.","bibtex":"@inproceedings{Lindner_2010, title={Advanced topics and applications of Transmission Electron Microscopy, Part I-II}, author={Lindner, Jörg}, year={2010} }"}},{"citation":{"chicago":"Ila, D., N.  Kishimoto, Jörg Lindner, and J. Baglin, eds. <i>Ion Beams and Nano-Engineering</i>. Vol. 1181. MRS Symposium Proceedings , 2010.","short":"D. Ila, N. Kishimoto, J. Lindner, J. Baglin, eds., Ion Beams and Nano-Engineering, MRS Symposium Proceedings , 2010.","ama":"Ila D, Kishimoto N, Lindner J, Baglin J, eds. <i>Ion Beams and Nano-Engineering</i>. Vol 1181. MRS Symposium Proceedings ; 2010.","bibtex":"@book{Ila_Kishimoto_Lindner_Baglin_2010, title={Ion Beams and Nano-Engineering}, volume={1181}, publisher={MRS Symposium Proceedings }, year={2010} }","mla":"Ila, D., et al., editors. <i>Ion Beams and Nano-Engineering</i>. Vol. 1181, MRS Symposium Proceedings , 2010.","apa":"Ila, D., Kishimoto, N., Lindner, J., &#38; Baglin, J. (Eds.). (2010). <i>Ion Beams and Nano-Engineering</i> (Vol. 1181). Presented at the MRS Spring Meeting 2009, San Francisco (USA): MRS Symposium Proceedings .","ieee":"D. Ila, N. Kishimoto, J. Lindner, and J. Baglin, Eds., <i>Ion Beams and Nano-Engineering</i>, vol. 1181. MRS Symposium Proceedings , 2010."},"date_created":"2018-08-28T12:38:16Z","department":[{"_id":"15"},{"_id":"286"}],"type":"book_editor","publication_identifier":{"isbn":["978-1-60511-154-4"]},"conference":{"location":"San Francisco (USA)","name":"MRS Spring Meeting 2009"},"status":"public","year":"2010","title":"Ion Beams and Nano-Engineering","intvolume":"      1181","publication_status":"published","date_updated":"2022-01-06T07:00:35Z","_id":"4207","language":[{"iso":"eng"}],"publisher":"MRS Symposium Proceedings ","volume":1181,"editor":[{"first_name":"D.","last_name":"Ila","full_name":"Ila, D."},{"full_name":"Kishimoto, N. ","last_name":"Kishimoto","first_name":"N. "},{"last_name":"Lindner","first_name":"Jörg","full_name":"Lindner, Jörg","id":"20797"},{"last_name":"Baglin","first_name":"J.","full_name":"Baglin, J."}],"user_id":"55706"},{"publication":"Journal of Physics: Conference Series","abstract":[{"text":"Growth of GaN on Si(111) potentially enables cost efficient manufacturing of optoelectronic devices due to the possibility of using cheap large area substrates. However, GaN layers grown on Si(111) substrates suffer from high tensile stress that can lead to cracking at layer thicknesses exceeding 1 μm. Another challenge is the high dislocation density of GaN layers grown on Si(111) which is detrimental to device performance. In this paper we show that a step graded AlGaN buffer layer can compensate tensile stress, avoiding cracking, and at the same time reduce the dislocation density. An additional SiNx interlayer in the GaN layer is shown to further reduce the dislocation density down to the high 108 /cm². Weak beam dark field TEM was used to study the dislocation reduction in cross sectional samples and for comparison of the step graded AlGaN buffer layer structure to a continuously graded one. STEM ADF was used to determine the exact location of dislocation bending with respect to the position of the interface.","lang":"eng"}],"file":[{"date_created":"2018-08-28T12:40:20Z","creator":"hclaudia","file_id":"4209","content_type":"application/pdf","success":1,"file_name":"Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNx and AlGaN layers.pdf","access_level":"closed","file_size":13011359,"relation":"main_file","date_updated":"2018-08-28T12:40:20Z"}],"date_created":"2018-08-28T12:39:31Z","type":"journal_article","department":[{"_id":"15"}],"year":"2010","title":"Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers","publication_identifier":{"issn":["1742-6596"]},"author":[{"full_name":"Häberlen, M","first_name":"M","last_name":"Häberlen"},{"first_name":"D","last_name":"Zhu","full_name":"Zhu, D"},{"full_name":"McAleese, C","last_name":"McAleese","first_name":"C"},{"full_name":"Kappers, M J","last_name":"Kappers","first_name":"M J"},{"full_name":"Humphreys, C J","last_name":"Humphreys","first_name":"C J"}],"date_updated":"2022-01-06T07:00:36Z","publication_status":"published","intvolume":"       209","article_type":"original","article_number":"012017","language":[{"iso":"eng"}],"doi":"10.1088/1742-6596/209/1/012017","file_date_updated":"2018-08-28T12:40:20Z","citation":{"short":"M. Häberlen, D. Zhu, C. McAleese, M.J. Kappers, C.J. Humphreys, Journal of Physics: Conference Series 209 (2010).","chicago":"Häberlen, M, D Zhu, C McAleese, M J Kappers, and C J Humphreys. “Dislocation Reduction in MOVPE Grown GaN Layers on (111)Si Using SiNxand AlGaN Layers.” <i>Journal of Physics: Conference Series</i> 209 (2010). <a href=\"https://doi.org/10.1088/1742-6596/209/1/012017\">https://doi.org/10.1088/1742-6596/209/1/012017</a>.","ieee":"M. Häberlen, D. Zhu, C. McAleese, M. J. Kappers, and C. J. Humphreys, “Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers,” <i>Journal of Physics: Conference Series</i>, vol. 209, 2010.","apa":"Häberlen, M., Zhu, D., McAleese, C., Kappers, M. J., &#38; Humphreys, C. J. (2010). Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers. <i>Journal of Physics: Conference Series</i>, <i>209</i>. <a href=\"https://doi.org/10.1088/1742-6596/209/1/012017\">https://doi.org/10.1088/1742-6596/209/1/012017</a>","bibtex":"@article{Häberlen_Zhu_McAleese_Kappers_Humphreys_2010, title={Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers}, volume={209}, DOI={<a href=\"https://doi.org/10.1088/1742-6596/209/1/012017\">10.1088/1742-6596/209/1/012017</a>}, number={012017}, journal={Journal of Physics: Conference Series}, publisher={IOP Publishing}, author={Häberlen, M and Zhu, D and McAleese, C and Kappers, M J and Humphreys, C J}, year={2010} }","ama":"Häberlen M, Zhu D, McAleese C, Kappers MJ, Humphreys CJ. Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers. <i>Journal of Physics: Conference Series</i>. 2010;209. doi:<a href=\"https://doi.org/10.1088/1742-6596/209/1/012017\">10.1088/1742-6596/209/1/012017</a>","mla":"Häberlen, M., et al. “Dislocation Reduction in MOVPE Grown GaN Layers on (111)Si Using SiNxand AlGaN Layers.” <i>Journal of Physics: Conference Series</i>, vol. 209, 012017, IOP Publishing, 2010, doi:<a href=\"https://doi.org/10.1088/1742-6596/209/1/012017\">10.1088/1742-6596/209/1/012017</a>."},"status":"public","has_accepted_license":"1","_id":"4208","publisher":"IOP Publishing","ddc":["530"],"user_id":"55706","volume":209}]