[{"article_type":"original","intvolume":" 247","publication_status":"published","date_updated":"2022-01-06T07:00:36Z","author":[{"last_name":"Häberlen","first_name":"Maik","full_name":"Häberlen, Maik"},{"full_name":"Zhu, Dandan","first_name":"Dandan","last_name":"Zhu"},{"full_name":"McAleese, Clifford","last_name":"McAleese","first_name":"Clifford"},{"full_name":"Zhu, Tongtong","last_name":"Zhu","first_name":"Tongtong"},{"full_name":"Kappers, Menno J.","last_name":"Kappers","first_name":"Menno J."},{"first_name":"Colin J.","last_name":"Humphreys","full_name":"Humphreys, Colin J."}],"publication_identifier":{"issn":["0370-1972","1521-3951"]},"year":"2010","title":"Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer","doi":"10.1002/pssb.200983537","language":[{"iso":"eng"}],"abstract":[{"lang":"eng","text":"In this paper we demonstrate a strain-driven GaN interlayer method to reduce dislocation densities in GaN grown on (111) oriented silicon by metal organic vapour phase epitaxy (MOVPE). In order to achieve crack-free GaN layers of\r\nreasonable thicknesses and dislocation densities it is crucial to integrate both dislocation reduction and strain management layers. In contrast to techniques like FACELO or nanoELO we show the in situ formation of GaN islands directly on the AlN nucleation layer without the need to deposit a SiO2 or SiNx mask. A graded AlGaN layer for strain management can be grown on top of this dislocation reducing 3D GaN inter-layer in order to achieve crack-free GaN layers grown on top of the AlGaN strain management layer. Furthermore, an additional SiNx layer for subsequent dislocation reduction can also be incorporated into the structure and is shown to efficiently reduce the dislocation density down to the low 10^9 cm^2. The structural properties of the 3D GaN island buffer layer and overgrown\r\nsamples are studied by means of SEM, cross-sectional, and plan view TEM. Cathodoluminiscence in an SEM is employed to correlate the dislocation microstructure as observed by plan view TEM with luminescent properties."}],"publication":"physica status solidi (b)","issue":"7","department":[{"_id":"15"}],"type":"journal_article","date_created":"2018-08-28T12:42:58Z","file":[{"date_updated":"2018-08-28T12:43:31Z","relation":"main_file","access_level":"closed","file_size":911931,"file_name":"Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer.pdf","success":1,"content_type":"application/pdf","file_id":"4211","creator":"hclaudia","date_created":"2018-08-28T12:43:31Z"}],"has_accepted_license":"1","status":"public","volume":247,"user_id":"55706","ddc":["530"],"publisher":"Wiley","_id":"4210","page":"1753-1756","citation":{"bibtex":"@article{Häberlen_Zhu_McAleese_Zhu_Kappers_Humphreys_2010, title={Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer}, volume={247}, DOI={10.1002/pssb.200983537}, number={7}, journal={physica status solidi (b)}, publisher={Wiley}, author={Häberlen, Maik and Zhu, Dandan and McAleese, Clifford and Zhu, Tongtong and Kappers, Menno J. and Humphreys, Colin J.}, year={2010}, pages={1753–1756} }","ama":"Häberlen M, Zhu D, McAleese C, Zhu T, Kappers MJ, Humphreys CJ. Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer. physica status solidi (b). 2010;247(7):1753-1756. doi:10.1002/pssb.200983537","mla":"Häberlen, Maik, et al. “Dislocation Reduction in GaN Grown on Si(111) Using a Strain-Driven 3D GaN Interlayer.” Physica Status Solidi (B), vol. 247, no. 7, Wiley, 2010, pp. 1753–56, doi:10.1002/pssb.200983537.","short":"M. Häberlen, D. Zhu, C. McAleese, T. Zhu, M.J. Kappers, C.J. Humphreys, Physica Status Solidi (B) 247 (2010) 1753–1756.","chicago":"Häberlen, Maik, Dandan Zhu, Clifford McAleese, Tongtong Zhu, Menno J. Kappers, and Colin J. Humphreys. “Dislocation Reduction in GaN Grown on Si(111) Using a Strain-Driven 3D GaN Interlayer.” Physica Status Solidi (B) 247, no. 7 (2010): 1753–56. https://doi.org/10.1002/pssb.200983537.","ieee":"M. Häberlen, D. Zhu, C. McAleese, T. Zhu, M. J. Kappers, and C. J. Humphreys, “Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer,” physica status solidi (b), vol. 247, no. 7, pp. 1753–1756, 2010.","apa":"Häberlen, M., Zhu, D., McAleese, C., Zhu, T., Kappers, M. J., & Humphreys, C. J. (2010). Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer. Physica Status Solidi (B), 247(7), 1753–1756. https://doi.org/10.1002/pssb.200983537"},"file_date_updated":"2018-08-28T12:43:31Z"},{"citation":{"ieee":"M. Häberlen et al., “Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth,” Journal of Applied Physics, vol. 108, no. 3, 2010.","apa":"Häberlen, M., Badcock, T. J., Moram, M. A., Hollander, J. L., Kappers, M. J., Dawson, P., … Oliver, R. A. (2010). Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth. Journal of Applied Physics, 108(3). https://doi.org/10.1063/1.3460641","mla":"Häberlen, M., et al. “Low Temperature Photoluminescence and Cathodoluminescence Studies of Nonpolar GaN Grown Using Epitaxial Lateral Overgrowth.” Journal of Applied Physics, vol. 108, no. 3, 033523, AIP Publishing, 2010, doi:10.1063/1.3460641.","bibtex":"@article{Häberlen_Badcock_Moram_Hollander_Kappers_Dawson_Humphreys_Oliver_2010, title={Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth}, volume={108}, DOI={10.1063/1.3460641}, number={3033523}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Häberlen, M. and Badcock, T. J. and Moram, M. A. and Hollander, J. L. and Kappers, M. J. and Dawson, P. and Humphreys, C. J. and Oliver, R. A.}, year={2010} }","short":"M. Häberlen, T.J. Badcock, M.A. Moram, J.L. Hollander, M.J. Kappers, P. Dawson, C.J. Humphreys, R.A. Oliver, Journal of Applied Physics 108 (2010).","ama":"Häberlen M, Badcock TJ, Moram MA, et al. Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth. Journal of Applied Physics. 2010;108(3). doi:10.1063/1.3460641","chicago":"Häberlen, M., T. J. Badcock, M. A. Moram, J. L. Hollander, M. J. Kappers, P. Dawson, C. J. Humphreys, and R. A. Oliver. “Low Temperature Photoluminescence and Cathodoluminescence Studies of Nonpolar GaN Grown Using Epitaxial Lateral Overgrowth.” Journal of Applied Physics 108, no. 3 (2010). https://doi.org/10.1063/1.3460641."},"file_date_updated":"2018-08-28T12:47:23Z","volume":108,"user_id":"55706","ddc":["530"],"_id":"4212","publisher":"AIP Publishing","has_accepted_license":"1","status":"public","department":[{"_id":"15"}],"type":"journal_article","date_created":"2018-08-28T12:46:49Z","file":[{"file_id":"4213","success":1,"content_type":"application/pdf","file_name":"Low temperature photoluminescence and cathodoluminescence studies of non-polar GaN grown using epitaxial lateral overgrowth.pdf","access_level":"closed","file_size":2391054,"relation":"main_file","date_updated":"2018-08-28T12:47:23Z","date_created":"2018-08-28T12:47:23Z","creator":"hclaudia"}],"abstract":[{"text":"Low temperature cathodo- and photoluminescence has been performed on nonpolar a-plane GaN films grown using epitaxial lateral overgrowth. In films overgrown at a low V–III ratio, the emission spectrum is dominated by “yellow” and “blue” luminescence bands, attributed to recombination at point defects or impurities. The intensity of this emission is observed to decrease steadily across the window region along the −c direction, possibly due to asymmetric diffusion of a point defect/impurity species. When overgrown at a higher V–III ratio, the near band edge and basal-plane stacking fault emission intensity increases by orders of magnitude and a donor–acceptor pair band is observed. Using monochromatic cathodoluminescence imaging, the various emission features are correlated with the microstructure of the film. In particular, the peak energy of the basal-plane stacking fault emission is seen to be blueshifted by \u000415 meV in the wing relative to the window region, which may be related to the different strain states in the respective regions.","lang":"eng"}],"issue":"3","publication":"Journal of Applied Physics","doi":"10.1063/1.3460641","language":[{"iso":"eng"}],"article_number":"033523","article_type":"original","intvolume":" 108","publication_status":"published","date_updated":"2022-01-06T07:00:37Z","publication_identifier":{"issn":["0021-8979","1089-7550"]},"author":[{"first_name":"M.","last_name":"Häberlen","full_name":"Häberlen, M."},{"full_name":"Badcock, T. J.","first_name":"T. J.","last_name":"Badcock"},{"first_name":"M. A.","last_name":"Moram","full_name":"Moram, M. A."},{"last_name":"Hollander","first_name":"J. L.","full_name":"Hollander, J. L."},{"full_name":"Kappers, M. J.","last_name":"Kappers","first_name":"M. J."},{"last_name":"Dawson","first_name":"P.","full_name":"Dawson, P."},{"full_name":"Humphreys, C. J.","last_name":"Humphreys","first_name":"C. J."},{"first_name":"R. A.","last_name":"Oliver","full_name":"Oliver, R. A."}],"title":"Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth","year":"2010"},{"status":"public","has_accepted_license":"1","_id":"4214","publisher":"Elsevier BV","page":"3536-3543","volume":312,"ddc":["530"],"user_id":"55706","citation":{"short":"R. Hao, T. Zhu, M. Häberlen, T.Y. Chang, M.J. Kappers, R.A. Oliver, C.J. Humphreys, M.A. Moram, Journal of Crystal Growth 312 (2010) 3536–3543.","chicago":"Hao, Rui, T. Zhu, M. Häberlen, T.Y. Chang, M.J. Kappers, R.A. Oliver, C.J. Humphreys, and M.A. Moram. “The Effects of Annealing on Non-Polar (112¯0) a-Plane GaN Films.” Journal of Crystal Growth 312, no. 23 (2010): 3536–43. https://doi.org/10.1016/j.jcrysgro.2010.08.041.","apa":"Hao, R., Zhu, T., Häberlen, M., Chang, T. Y., Kappers, M. J., Oliver, R. A., … Moram, M. A. (2010). The effects of annealing on non-polar (112¯0) a-plane GaN films. Journal of Crystal Growth, 312(23), 3536–3543. https://doi.org/10.1016/j.jcrysgro.2010.08.041","ieee":"R. Hao et al., “The effects of annealing on non-polar (112¯0) a-plane GaN films,” Journal of Crystal Growth, vol. 312, no. 23, pp. 3536–3543, 2010.","ama":"Hao R, Zhu T, Häberlen M, et al. The effects of annealing on non-polar (112¯0) a-plane GaN films. Journal of Crystal Growth. 2010;312(23):3536-3543. doi:10.1016/j.jcrysgro.2010.08.041","bibtex":"@article{Hao_Zhu_Häberlen_Chang_Kappers_Oliver_Humphreys_Moram_2010, title={The effects of annealing on non-polar (112¯0) a-plane GaN films}, volume={312}, DOI={10.1016/j.jcrysgro.2010.08.041}, number={23}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Hao, Rui and Zhu, T. and Häberlen, M. and Chang, T.Y. and Kappers, M.J. and Oliver, R.A. and Humphreys, C.J. and Moram, M.A.}, year={2010}, pages={3536–3543} }","mla":"Hao, Rui, et al. “The Effects of Annealing on Non-Polar (112¯0) a-Plane GaN Films.” Journal of Crystal Growth, vol. 312, no. 23, Elsevier BV, 2010, pp. 3536–43, doi:10.1016/j.jcrysgro.2010.08.041."},"file_date_updated":"2018-08-28T12:50:07Z","publication_identifier":{"issn":["0022-0248"]},"author":[{"last_name":"Hao","first_name":"Rui","full_name":"Hao, Rui"},{"full_name":"Zhu, T.","first_name":"T.","last_name":"Zhu"},{"last_name":"Häberlen","first_name":"M.","full_name":"Häberlen, M."},{"last_name":"Chang","first_name":"T.Y.","full_name":"Chang, T.Y."},{"full_name":"Kappers, M.J.","last_name":"Kappers","first_name":"M.J."},{"full_name":"Oliver, R.A.","first_name":"R.A.","last_name":"Oliver"},{"full_name":"Humphreys, C.J.","last_name":"Humphreys","first_name":"C.J."},{"full_name":"Moram, M.A.","first_name":"M.A.","last_name":"Moram"}],"title":"The effects of annealing on non-polar (112¯0) a-plane GaN films","year":"2010","intvolume":" 312","article_type":"original","date_updated":"2022-01-06T07:00:37Z","publication_status":"published","language":[{"iso":"eng"}],"doi":"10.1016/j.jcrysgro.2010.08.041","issue":"23","publication":"Journal of Crystal Growth","abstract":[{"lang":"eng","text":"Non-polar a -plane (1 1 2 ̄ 0) GaN films were grown on r-plane sapphire by metal–organic vapor phase epitaxy and were subsequently annealed for 90 min at 1070°C. Most dislocations were partial\r\ndislocations, which terminated basal plane stacking faults. Prior to annealing, these dislocations were\r\nrandomly distributed. After annealing, these dislocations moved into arrays oriented along the [0 0 0 1]\r\ndirection and aligned perpendicular to the film–substrate interface throughout their length, although\r\nthe total dislocation density remained unchanged. These changes were accompanied by broadening of\r\nthe symmetric X-ray diffraction 1 1 2 ̄ 0 w-scan widths. The mechanism of movement was identified as\r\ndislocation glide, occurring due to highly anisotropic stresses (confirmed by X-ray diffraction lattice\r\nparameter measurements) and evidenced by macroscopic slip bands observed on the sample surface.\r\nThere was also an increase in the density of unintentionally n-type doped electrically conductive\r\ninclined features present at the film–substrate interface (as observed in cross-section using scanning\r\ncapacitance microscopy), suggesting out-diffusion of impurities from the substrate along with prismatic\r\nstacking faults. These data suggest that annealing processes performed close to film growth\r\ntemperatures can affect both the microstructure and the electrical properties of non-polar GaN films."}],"date_created":"2018-08-28T12:49:39Z","file":[{"file_name":"The effects of annealing on non-polar (11-20) a-plane GaN films.pdf","file_size":1218752,"access_level":"closed","relation":"main_file","date_updated":"2018-08-28T12:50:07Z","file_id":"4215","content_type":"application/pdf","success":1,"creator":"hclaudia","date_created":"2018-08-28T12:50:07Z"}],"department":[{"_id":"15"}],"type":"journal_article"},{"citation":{"mla":"Scholle, Andreas, et al. “Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC.” Materials Science Forum, vol. 645–648, Trans Tech Publications, 2010, pp. 403–06, doi:10.4028/www.scientific.net/msf.645-648.403.","bibtex":"@article{Scholle_Greulich-Weber_Rauls_Schmidt_Gerstmann_2010, title={Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC}, volume={645–648}, DOI={10.4028/www.scientific.net/msf.645-648.403}, journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Scholle, Andreas and Greulich-Weber, Siegmund and Rauls, Eva and Schmidt, Wolf Gero and Gerstmann, Uwe}, year={2010}, pages={403–406} }","ama":"Scholle A, Greulich-Weber S, Rauls E, Schmidt WG, Gerstmann U. Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC. Materials Science Forum. 2010;645-648:403-406. doi:10.4028/www.scientific.net/msf.645-648.403","ieee":"A. Scholle, S. Greulich-Weber, E. Rauls, W. G. Schmidt, and U. Gerstmann, “Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC,” Materials Science Forum, vol. 645–648, pp. 403–406, 2010.","apa":"Scholle, A., Greulich-Weber, S., Rauls, E., Schmidt, W. G., & Gerstmann, U. (2010). Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC. Materials Science Forum, 645–648, 403–406. https://doi.org/10.4028/www.scientific.net/msf.645-648.403","short":"A. Scholle, S. Greulich-Weber, E. Rauls, W.G. Schmidt, U. Gerstmann, Materials Science Forum 645–648 (2010) 403–406.","chicago":"Scholle, Andreas, Siegmund Greulich-Weber, Eva Rauls, Wolf Gero Schmidt, and Uwe Gerstmann. “Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC.” Materials Science Forum 645–648 (2010): 403–6. https://doi.org/10.4028/www.scientific.net/msf.645-648.403."},"file_date_updated":"2018-08-28T12:54:26Z","status":"public","has_accepted_license":"1","publisher":"Trans Tech Publications","_id":"4216","page":"403-406","volume":"645-648","ddc":["530"],"user_id":"55706","publication":"Materials Science Forum","abstract":[{"text":"In non-annealed 6H-SiC samples that were electron irradiated at room temperature, a new\r\nEPR signal due to a S=1 defect center with exceptionally large zero-field splitting (D = +652·10-4\r\ncm-1) has been observed under illumination. A positive sign of D demonstrates that the spin-orbit\r\ncontribution to the zero-field splitting exceeds by far that of the spin-spin interaction. A principal\r\naxis of the fine structure tilted by 59° against the crystal c-axis as well as the exceptionally high\r\nzero-field splitting D can be qualitatively understood by the occurrence of additional close-lying\r\ndefect levels in defect clusters resulting in comparatively large second-order spin-orbit coupling. A\r\ntentative assignment to vacancy clusters is supported by the observed annealing behavior.","lang":"eng"}],"date_created":"2018-08-28T12:53:50Z","file":[{"content_type":"application/pdf","success":1,"file_id":"4217","file_size":583484,"access_level":"closed","file_name":"Fine structure of triplet centers in room temperature irradiated 6H-SiC.pdf","date_updated":"2018-08-28T12:54:26Z","relation":"main_file","date_created":"2018-08-28T12:54:26Z","creator":"hclaudia"}],"department":[{"_id":"15"}],"type":"journal_article","author":[{"full_name":"Scholle, Andreas","last_name":"Scholle","first_name":"Andreas"},{"full_name":"Greulich-Weber, Siegmund","first_name":"Siegmund","last_name":"Greulich-Weber"},{"first_name":"Eva","last_name":"Rauls","full_name":"Rauls, Eva"},{"first_name":"Wolf Gero","last_name":"Schmidt","full_name":"Schmidt, Wolf Gero"},{"full_name":"Gerstmann, Uwe","first_name":"Uwe","last_name":"Gerstmann"}],"publication_identifier":{"issn":["1662-9752"]},"year":"2010","title":"Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC","article_type":"original","date_updated":"2022-01-06T07:00:38Z","publication_status":"published","language":[{"iso":"eng"}],"doi":"10.4028/www.scientific.net/msf.645-648.403"},{"publication":"Chemie Ingenieur Technik","issue":"3","abstract":[{"lang":"ger","text":"Strömungsbasierte Mischprozesse sind grundlegender Bestandteil vieler chemischer Prozesse. Realisierbare Mischzeiten reichen von einigen Millisekunden bis zu Sekunden, wobei die vollständige Homogenisierung oft nicht sichergestellt ist. Werden kinetische Parameter chemischer Reaktionen dieses Zeitskalenbereichs ohne Berücksichtigung der Mischprozesse bestimmt, sind sie mischungsmaskiert und geben die inhärente chemische Kinetik nicht wieder. In dieser Arbeit wird die Validierung und Anwendung einer Methode zur Bestimmung inhärenter chemischer Kinetiken von in Flüssigphase ablaufenden chemischen Reaktionen im stationären, laminaren Flachbettmikroreaktor vorgestellt. Der verfolgte Ansatz basiert auf der mechanistischen Modellierung der Molmengen unter Berücksichtigung von Konvektion, Diffusion und Reaktion und der Bestimmung der unbekannten Parameter durch Anpassung des Modells an experimentell ermittelte Konzentrationsverläufe."}],"date_created":"2019-01-10T10:13:09Z","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"type":"journal_article","publication_identifier":{"issn":["0009-286X","1522-2640"]},"author":[{"full_name":"Warnecke, H.-J.","last_name":"Warnecke","first_name":"H.-J."},{"full_name":"Bothe, D.","first_name":"D.","last_name":"Bothe"},{"id":"606","orcid":"0000-0002-5190-0944","first_name":"Artur","last_name":"Zrenner","full_name":"Zrenner, Artur"},{"id":"53","full_name":"Berth, Gerhard","first_name":"Gerhard","last_name":"Berth"},{"first_name":"K.-P.","last_name":"Hüsch","full_name":"Hüsch, K.-P."}],"year":"2010","title":"Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*","intvolume":" 82","article_type":"original","date_updated":"2022-01-06T07:03:13Z","publication_status":"published","language":[{"iso":"ger"}],"doi":"10.1002/cite.200900169","citation":{"apa":"Warnecke, H.-J., Bothe, D., Zrenner, A., Berth, G., & Hüsch, K.-P. (2010). Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*. Chemie Ingenieur Technik, 82(3), 251–258. https://doi.org/10.1002/cite.200900169","ieee":"H.-J. Warnecke, D. Bothe, A. Zrenner, G. Berth, and K.-P. Hüsch, “Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*,” Chemie Ingenieur Technik, vol. 82, no. 3, pp. 251–258, 2010.","chicago":"Warnecke, H.-J., D. Bothe, Artur Zrenner, Gerhard Berth, and K.-P. Hüsch. “Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*.” Chemie Ingenieur Technik 82, no. 3 (2010): 251–58. https://doi.org/10.1002/cite.200900169.","short":"H.-J. Warnecke, D. Bothe, A. Zrenner, G. Berth, K.-P. Hüsch, Chemie Ingenieur Technik 82 (2010) 251–258.","mla":"Warnecke, H. J., et al. “Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*.” Chemie Ingenieur Technik, vol. 82, no. 3, Wiley, 2010, pp. 251–58, doi:10.1002/cite.200900169.","ama":"Warnecke H-J, Bothe D, Zrenner A, Berth G, Hüsch K-P. Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*. Chemie Ingenieur Technik. 2010;82(3):251-258. doi:10.1002/cite.200900169","bibtex":"@article{Warnecke_Bothe_Zrenner_Berth_Hüsch_2010, title={Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*}, volume={82}, DOI={10.1002/cite.200900169}, number={3}, journal={Chemie Ingenieur Technik}, publisher={Wiley}, author={Warnecke, H.-J. and Bothe, D. and Zrenner, Artur and Berth, Gerhard and Hüsch, K.-P.}, year={2010}, pages={251–258} }"},"status":"public","publisher":"Wiley","_id":"6619","page":"251-258","volume":82,"user_id":"49428"},{"date_created":"2019-02-21T14:43:30Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"},{"_id":"313"}],"publication":"Physica E: Low-dimensional Systems and Nanostructures","issue":"10","language":[{"iso":"eng"}],"doi":"10.1016/j.physe.2009.12.051","year":"2010","title":"Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator","publication_identifier":{"issn":["1386-9477"]},"author":[{"last_name":"Piegdon","first_name":"Karoline A.","full_name":"Piegdon, Karoline A."},{"first_name":"Matthias","last_name":"Offer","full_name":"Offer, Matthias"},{"last_name":"Lorke","first_name":"Axel","full_name":"Lorke, Axel"},{"full_name":"Urbanski, Martin","last_name":"Urbanski","first_name":"Martin"},{"last_name":"Hoischen","first_name":"Andreas","full_name":"Hoischen, Andreas"},{"full_name":"Kitzerow, Heinz-Siegfried","first_name":"Heinz-Siegfried","last_name":"Kitzerow","id":"254"},{"full_name":"Declair, Stefan","last_name":"Declair","first_name":"Stefan"},{"first_name":"Jens","last_name":"Förstner","full_name":"Förstner, Jens"},{"full_name":"Meier, Torsten","first_name":"Torsten","last_name":"Meier"},{"id":"37763","first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk"},{"full_name":"Wieck, Andreas D.","last_name":"Wieck","first_name":"Andreas D."},{"full_name":"Meier, Cedrik","first_name":"Cedrik","last_name":"Meier"}],"publication_status":"published","date_updated":"2023-01-10T13:59:58Z","intvolume":" 42","citation":{"mla":"Piegdon, Karoline A., et al. “Self-Assembled Quantum Dots in a Liquid-Crystal-Tunable Microdisk Resonator.” Physica E: Low-Dimensional Systems and Nanostructures, vol. 42, no. 10, Elsevier BV, 2010, pp. 2552–55, doi:10.1016/j.physe.2009.12.051.","ama":"Piegdon KA, Offer M, Lorke A, et al. 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Bovensiepen et al., vol. 1, Wiley‐VCH Verlag, 2010, pp. 579–91, doi:10.1002/9783527633418.ch24.","bibtex":"@inbook{Güdde_Rohleder_Meier_Koch_Höfer_2010, place={Weinheim}, series={Current Developments}, title={Coherently controlled electrical currents at surfaces}, volume={1}, DOI={10.1002/9783527633418.ch24}, booktitle={Dynamics at Solid State Surfaces and Interfaces}, publisher={Wiley‐VCH Verlag}, author={Güdde, J. and Rohleder, M. and Meier, Torsten and Koch, S.W. and Höfer, U.}, editor={Bovensiepen, U. and Petek, H. and Wolf, M.}, year={2010}, pages={579–591}, collection={Current Developments} }","ama":"Güdde J, Rohleder M, Meier T, Koch SW, Höfer U. Coherently controlled electrical currents at surfaces. In: Bovensiepen U, Petek H, Wolf M, eds. Dynamics at Solid State Surfaces and Interfaces. Vol 1. Current Developments. Wiley‐VCH Verlag; 2010:579-591. doi:10.1002/9783527633418.ch24","ieee":"J. Güdde, M. Rohleder, T. Meier, S. W. Koch, and U. Höfer, “Coherently controlled electrical currents at surfaces,” in Dynamics at Solid State Surfaces and Interfaces, vol. 1, U. Bovensiepen, H. Petek, and M. Wolf, Eds. Weinheim: Wiley‐VCH Verlag, 2010, pp. 579–591.","apa":"Güdde, J., Rohleder, M., Meier, T., Koch, S. W., & Höfer, U. (2010). Coherently controlled electrical currents at surfaces. In U. Bovensiepen, H. Petek, & M. Wolf (Eds.), Dynamics at Solid State Surfaces and Interfaces (Vol. 1, pp. 579–591). Wiley‐VCH Verlag. https://doi.org/10.1002/9783527633418.ch24","short":"J. Güdde, M. Rohleder, T. Meier, S.W. Koch, U. Höfer, in: U. Bovensiepen, H. Petek, M. Wolf (Eds.), Dynamics at Solid State Surfaces and Interfaces, Wiley‐VCH Verlag, Weinheim, 2010, pp. 579–591.","chicago":"Güdde, J., M. Rohleder, Torsten Meier, S.W. Koch, and U. Höfer. “Coherently Controlled Electrical Currents at Surfaces.” In Dynamics at Solid State Surfaces and Interfaces, edited by U. Bovensiepen, H. Petek, and M. Wolf, 1:579–91. Current Developments. Weinheim: Wiley‐VCH Verlag, 2010. https://doi.org/10.1002/9783527633418.ch24."},"place":"Weinheim"},{"doi":"10.1103/physrevb.82.115316","article_number":"115316","language":[{"iso":"eng"}],"publication_status":"published","date_updated":"2023-04-19T11:11:47Z","article_type":"original","intvolume":" 82","year":"2010","title":"Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells","author":[{"full_name":"Duc, Huynh Thanh","first_name":"Huynh Thanh","last_name":"Duc"},{"orcid":"0000-0001-7059-9862","last_name":"Förstner","first_name":"Jens","full_name":"Förstner, Jens","id":"158"},{"full_name":"Meier, Torsten","first_name":"Torsten","last_name":"Meier","orcid":"0000-0001-8864-2072","id":"344"}],"publication_identifier":{"issn":["1098-0121","1550-235X"]},"type":"journal_article","keyword":["tet_topic_qw"],"department":[{"_id":"15"},{"_id":"230"},{"_id":"293"},{"_id":"170"}],"file":[{"creator":"hclaudia","date_created":"2018-08-27T10:27:00Z","file_size":639662,"access_level":"closed","file_name":"2010 Duc,Förstner,Meier_Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells.pdf","date_updated":"2018-08-27T10:27:00Z","relation":"main_file","content_type":"application/pdf","success":1,"file_id":"4128"}],"date_created":"2018-08-27T10:25:36Z","abstract":[{"lang":"eng","text":"The dynamics of charge and spin injection currents excited by circularly polarized, one-color laser beams in\r\nsemiconductor quantum wells is analyzed. Our microscopic approach is based on a 14x14 k · p band-structure\r\ntheory in combination with multisubband semiconductor Bloch equations which allows a detailed analysis of\r\nthe photogenerated carrier distributions and coherences in k space. Charge and spin injection currents are\r\nnumerically calculated for [110]- and [001]-grown GaAs quantum wells including dc population contributions\r\nand ac contributions that arise from intersubband coherences. The dependencies of the injection currents on the\r\nexcitation conditions, in particular, the photon energy are computed and discussed."}],"publication":"Physical Review B","issue":"11","user_id":"49063","ddc":["530"],"volume":82,"publisher":"American Physical Society (APS)","_id":"4127","has_accepted_license":"1","status":"public","file_date_updated":"2018-08-27T10:27:00Z","citation":{"mla":"Duc, Huynh Thanh, et al. “Microscopic Analysis of Charge and Spin Photocurrents Injected by Circularly Polarized One-Color Laser Pulses in GaAs Quantum Wells.” Physical Review B, vol. 82, no. 11, 115316, American Physical Society (APS), 2010, doi:10.1103/physrevb.82.115316.","ama":"Duc HT, Förstner J, Meier T. Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells. Physical Review B. 2010;82(11). doi:10.1103/physrevb.82.115316","bibtex":"@article{Duc_Förstner_Meier_2010, title={Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells}, volume={82}, DOI={10.1103/physrevb.82.115316}, number={11115316}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Duc, Huynh Thanh and Förstner, Jens and Meier, Torsten}, year={2010} }","apa":"Duc, H. T., Förstner, J., & Meier, T. (2010). Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells. Physical Review B, 82(11), Article 115316. https://doi.org/10.1103/physrevb.82.115316","ieee":"H. T. Duc, J. Förstner, and T. Meier, “Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells,” Physical Review B, vol. 82, no. 11, Art. no. 115316, 2010, doi: 10.1103/physrevb.82.115316.","chicago":"Duc, Huynh Thanh, Jens Förstner, and Torsten Meier. “Microscopic Analysis of Charge and Spin Photocurrents Injected by Circularly Polarized One-Color Laser Pulses in GaAs Quantum Wells.” Physical Review B 82, no. 11 (2010). https://doi.org/10.1103/physrevb.82.115316.","short":"H.T. Duc, J. Förstner, T. Meier, Physical Review B 82 (2010)."}},{"_id":"43261","publisher":"SPIE","user_id":"49063","editor":[{"full_name":"Song, Jin-Joo","first_name":"Jin-Joo","last_name":"Song"},{"full_name":"Tsen, Kong-Thon","last_name":"Tsen","first_name":"Kong-Thon"},{"first_name":"Markus","last_name":"Betz","full_name":"Betz, Markus"},{"full_name":"Y. Elezzabi, Abdulhakem","first_name":"Abdulhakem","last_name":"Y. Elezzabi"}],"volume":7600,"status":"public","citation":{"chicago":"Güdde, J., M. Rohleder, Torsten Meier, S.W. Koch, and U. Höfer. “Ultrafast Coherent Control of Electric Currents at Metal Surfaces.” In Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV, edited by Jin-Joo Song, Kong-Thon Tsen, Markus Betz, and Abdulhakem Y. Elezzabi, Vol. 7600. SPIE Proceedings. SPIE, 2010. https://doi.org/10.1117/12.839672.","short":"J. Güdde, M. Rohleder, T. Meier, S.W. Koch, U. Höfer, in: J.-J. Song, K.-T. Tsen, M. Betz, A. Y. Elezzabi (Eds.), Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV, SPIE, 2010.","ieee":"J. Güdde, M. Rohleder, T. Meier, S. W. Koch, and U. Höfer, “Ultrafast coherent control of electric currents at metal surfaces,” in Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV, 2010, vol. 7600, doi: 10.1117/12.839672.","apa":"Güdde, J., Rohleder, M., Meier, T., Koch, S. W., & Höfer, U. (2010). Ultrafast coherent control of electric currents at metal surfaces. In J.-J. Song, K.-T. Tsen, M. Betz, & A. Y. Elezzabi (Eds.), Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV (No. 76001K; Vol. 7600). SPIE. https://doi.org/10.1117/12.839672","bibtex":"@inproceedings{Güdde_Rohleder_Meier_Koch_Höfer_2010, series={SPIE Proceedings}, title={Ultrafast coherent control of electric currents at metal surfaces}, volume={7600}, DOI={10.1117/12.839672}, number={76001K}, booktitle={Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV}, publisher={SPIE}, author={Güdde, J. and Rohleder, M. and Meier, Torsten and Koch, S.W. and Höfer, U.}, editor={Song, Jin-Joo and Tsen, Kong-Thon and Betz, Markus and Y. Elezzabi, Abdulhakem}, year={2010}, collection={SPIE Proceedings} }","ama":"Güdde J, Rohleder M, Meier T, Koch SW, Höfer U. Ultrafast coherent control of electric currents at metal surfaces. In: Song J-J, Tsen K-T, Betz M, Y. Elezzabi A, eds. Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV. Vol 7600. SPIE Proceedings. SPIE; 2010. doi:10.1117/12.839672","mla":"Güdde, J., et al. “Ultrafast Coherent Control of Electric Currents at Metal Surfaces.” Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV, edited by Jin-Joo Song et al., vol. 7600, 76001K, SPIE, 2010, doi:10.1117/12.839672."},"main_file_link":[{"url":"https://spie.org/Publications/Proceedings/Paper/10.1117/12.839672"}],"article_number":"76001K","series_title":"SPIE Proceedings","language":[{"iso":"eng"}],"doi":"10.1117/12.839672","title":"Ultrafast coherent control of electric currents at metal surfaces","year":"2010","author":[{"full_name":"Güdde, J.","last_name":"Güdde","first_name":"J."},{"full_name":"Rohleder, M.","first_name":"M.","last_name":"Rohleder"},{"full_name":"Meier, Torsten","orcid":"0000-0001-8864-2072","first_name":"Torsten","last_name":"Meier","id":"344"},{"first_name":"S.W.","last_name":"Koch","full_name":"Koch, S.W."},{"last_name":"Höfer","first_name":"U.","full_name":"Höfer, U."}],"date_updated":"2023-04-19T11:10:38Z","publication_status":"published","intvolume":" 7600","date_created":"2023-04-01T21:37:05Z","type":"conference","department":[{"_id":"293"}],"publication":"Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV","abstract":[{"text":"We report the development of an experimental technique to measure the dynamics of electrical currents on the femtosecond timescale. The technique combines methods of coherent control with time- and angle-resolved photoelectron spectroscopy. Direct snapshots of the momentum distribution of the excited electrons as function of time are then determined by photoelectron spectroscopy. In this way we gain information on the generation and decay of ultrashort current pulses in unprecedented detail. In particular, this technique allows the observation of elastic electron scattering in terms of an incoherent population dynamics in momentum space. We have applied this optical current generation and detection scheme to electrons in so-called image-potential states which represent a prototype of two-dimensional electronic surface states. Electrons in these states are bound perpendicular to the metal surface by the Coulombic image potential whereas they can move almost freely parallel to the surface. For the (n=1) image-potential state of Cu(100) we find a decay time of 10 fs due to electron scattering with steps and surface defects.","lang":"eng"}]},{"citation":{"ama":"Duc HT, Förstner J, Meier T. Microscopic theoretical analysis of optically generated injection currents in semiconductor quantum wells. In: Song J-J, Tsen K-T, Betz M, Elezzabi AY, eds. Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV. Vol 7600. SPIE Proceedings. SPIE; 2010:76000S-76000S - 9. doi:10.1117/12.840388","bibtex":"@inproceedings{Duc_Förstner_Meier_2010, series={SPIE Proceedings}, title={Microscopic theoretical analysis of optically generated injection currents in semiconductor quantum wells}, volume={7600}, DOI={10.1117/12.840388}, booktitle={Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV}, publisher={SPIE}, author={Duc, Huynh Thanh and Förstner, Jens and Meier, Torsten}, editor={Song, Jin-Joo and Tsen, Kong-Thon and Betz, Markus and Elezzabi, Abdulhakem Y.}, year={2010}, pages={76000S-76000S–9}, collection={SPIE Proceedings} }","mla":"Duc, Huynh Thanh, et al. “Microscopic Theoretical Analysis of Optically Generated Injection Currents in Semiconductor Quantum Wells.” Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV, edited by Jin-Joo Song et al., vol. 7600, SPIE, 2010, pp. 76000S-76000S – 9, doi:10.1117/12.840388.","chicago":"Duc, Huynh Thanh, Jens Förstner, and Torsten Meier. “Microscopic Theoretical Analysis of Optically Generated Injection Currents in Semiconductor Quantum Wells.” In Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV, edited by Jin-Joo Song, Kong-Thon Tsen, Markus Betz, and Abdulhakem Y. Elezzabi, 7600:76000S-76000S – 9. SPIE Proceedings. SPIE, 2010. https://doi.org/10.1117/12.840388.","short":"H.T. Duc, J. Förstner, T. Meier, in: J.-J. Song, K.-T. Tsen, M. Betz, A.Y. Elezzabi (Eds.), Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV, SPIE, 2010, pp. 76000S-76000S–9.","apa":"Duc, H. T., Förstner, J., & Meier, T. (2010). Microscopic theoretical analysis of optically generated injection currents in semiconductor quantum wells. In J.-J. Song, K.-T. Tsen, M. Betz, & A. Y. Elezzabi (Eds.), Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV (Vol. 7600, pp. 76000S-76000S – 9). SPIE. https://doi.org/10.1117/12.840388","ieee":"H. T. Duc, J. Förstner, and T. Meier, “Microscopic theoretical analysis of optically generated injection currents in semiconductor quantum wells,” in Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV, 2010, vol. 7600, pp. 76000S-76000S–9, doi: 10.1117/12.840388."},"page":"76000S-76000S-9","_id":"4176","publisher":"SPIE","user_id":"49063","editor":[{"first_name":"Jin-Joo","last_name":"Song","full_name":"Song, Jin-Joo"},{"last_name":"Tsen","first_name":"Kong-Thon","full_name":"Tsen, Kong-Thon"},{"full_name":"Betz, Markus","first_name":"Markus","last_name":"Betz"},{"full_name":"Elezzabi, Abdulhakem Y.","first_name":"Abdulhakem Y.","last_name":"Elezzabi"}],"volume":7600,"status":"public","date_created":"2018-08-28T09:00:53Z","type":"conference","keyword":["tet_topic_qw"],"department":[{"_id":"15"},{"_id":"293"},{"_id":"170"},{"_id":"230"}],"publication":"Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV","abstract":[{"text":"A microscopic theory that describes injection currents in GaAs quantum wells is presented. 14 × 14 band k.p theory is used to compute the band structure including anisotropy and spin-orbit interaction. Transient injection currents are obtained via numerical solutions of the semiconductor Bloch equations. Depending on the growth direction of the considered quantum well system and the propagation and polarization directions of the incident light beam, it is possible to generate charge and/or spin photocurrents on ultrashort time scales. The dependence of the photocurrents on the excitation conditions is computed and discussed.","lang":"eng"}],"language":[{"iso":"eng"}],"series_title":"SPIE Proceedings","doi":"10.1117/12.840388","year":"2010","title":"Microscopic theoretical analysis of optically generated injection currents in semiconductor quantum wells","author":[{"last_name":"Duc","first_name":"Huynh Thanh","full_name":"Duc, Huynh Thanh"},{"id":"158","full_name":"Förstner, Jens","orcid":"0000-0001-7059-9862","last_name":"Förstner","first_name":"Jens"},{"full_name":"Meier, Torsten","first_name":"Torsten","orcid":"0000-0001-8864-2072","last_name":"Meier","id":"344"}],"date_updated":"2023-04-19T11:07:47Z","publication_status":"published","intvolume":" 7600"},{"citation":{"bibtex":"@article{Meier_Declair_Förstner_2010, title={Numerical Analysis of Coupled Photonic Crystal Cavities}, volume={1291}, DOI={10.1063/1.3506125}, number={4646–48}, journal={AIP Conference Proceedings}, publisher={American Institute of Physics}, author={Meier, Torsten and Declair, S. and Förstner, J.}, year={2010} }","ama":"Meier T, Declair S, Förstner J. Numerical Analysis of Coupled Photonic Crystal Cavities. AIP Conference Proceedings. 2010;1291(46). doi:10.1063/1.3506125","mla":"Meier, Torsten, et al. “Numerical Analysis of Coupled Photonic Crystal Cavities.” AIP Conference Proceedings, vol. 1291, no. 46, 46–48, American Institute of Physics, 2010, doi:10.1063/1.3506125.","chicago":"Meier, Torsten, S. Declair, and J. Förstner. “Numerical Analysis of Coupled Photonic Crystal Cavities.” AIP Conference Proceedings 1291, no. 46 (2010). https://doi.org/10.1063/1.3506125.","short":"T. Meier, S. Declair, J. Förstner, AIP Conference Proceedings 1291 (2010).","ieee":"T. Meier, S. Declair, and J. Förstner, “Numerical Analysis of Coupled Photonic Crystal Cavities,” AIP Conference Proceedings, vol. 1291, no. 46, Art. no. 46–48, 2010, doi: 10.1063/1.3506125.","apa":"Meier, T., Declair, S., & Förstner, J. (2010). Numerical Analysis of Coupled Photonic Crystal Cavities. AIP Conference Proceedings, 1291(46), Article 46–48. https://doi.org/10.1063/1.3506125"},"status":"public","_id":"44063","publisher":"American Institute of Physics","volume":1291,"user_id":"49063","publication":"AIP Conference Proceedings","issue":"46 ","abstract":[{"text":"We present an analysis of the coupling between photonic crystal cavities in different geometries. Inline‐, side‐ and angle‐coupled L3‐geometries are investigated numerically in three dimensions. Asymmetric mode splitting of the fundamental mode for the L3‐cavity is shown for all geometrical setups evidencing for strong cavity‐cavity interactions. The coupling efficiency for the fundamental mode is shown to be best for a 30° angle between the cavity‐centers due to the direction of in‐plane leackage out of the cavites.","lang":"eng"}],"date_created":"2023-04-19T10:57:09Z","department":[{"_id":"293"}],"type":"journal_article","author":[{"full_name":"Meier, Torsten","orcid":"0000-0001-8864-2072","last_name":"Meier","first_name":"Torsten","id":"344"},{"full_name":"Declair, S.","last_name":"Declair","first_name":"S."},{"full_name":"Förstner, J.","last_name":"Förstner","first_name":"J."}],"year":"2010","title":"Numerical Analysis of Coupled Photonic Crystal Cavities","intvolume":" 1291","publication_status":"published","date_updated":"2023-04-19T10:57:12Z","language":[{"iso":"eng"}],"article_number":"46-48","main_file_link":[{"url":"https://aip.scitation.org/doi/abs/10.1063/1.3506125"}],"doi":"10.1063/1.3506125"},{"status":"public","page":"905-909","_id":"24980","user_id":"49063","volume":18,"citation":{"mla":"Gögh, N., et al. “Localization of Excitons in Weakly Disordered Semiconductor Structures: A Model Study.” Annalen Der Physik, vol. 18, no. 12, 2010, pp. 905–09, doi:10.1002/andp.20095211219.","bibtex":"@article{Gögh_Thomas_Kuznetsova_Meier_Varga_2010, title={Localization of excitons in weakly disordered semiconductor structures: A model study}, volume={18}, DOI={10.1002/andp.20095211219}, number={12}, journal={Annalen der Physik}, author={Gögh, N. and Thomas, P. and Kuznetsova, I. and Meier, Torsten and Varga, I.}, year={2010}, pages={905–909} }","ama":"Gögh N, Thomas P, Kuznetsova I, Meier T, Varga I. Localization of excitons in weakly disordered semiconductor structures: A model study. Annalen der Physik. 2010;18(12):905-909. doi:10.1002/andp.20095211219","ieee":"N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, and I. Varga, “Localization of excitons in weakly disordered semiconductor structures: A model study,” Annalen der Physik, vol. 18, no. 12, pp. 905–909, 2010, doi: 10.1002/andp.20095211219.","apa":"Gögh, N., Thomas, P., Kuznetsova, I., Meier, T., & Varga, I. (2010). Localization of excitons in weakly disordered semiconductor structures: A model study. Annalen Der Physik, 18(12), 905–909. https://doi.org/10.1002/andp.20095211219","chicago":"Gögh, N., P. Thomas, I. Kuznetsova, Torsten Meier, and I. Varga. “Localization of Excitons in Weakly Disordered Semiconductor Structures: A Model Study.” Annalen Der Physik 18, no. 12 (2010): 905–9. https://doi.org/10.1002/andp.20095211219.","short":"N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, I. Varga, Annalen Der Physik 18 (2010) 905–909."},"title":"Localization of excitons in weakly disordered semiconductor structures: A model study","year":"2010","publication_identifier":{"issn":["0003-3804","1521-3889"]},"author":[{"full_name":"Gögh, N.","first_name":"N.","last_name":"Gögh"},{"full_name":"Thomas, P.","last_name":"Thomas","first_name":"P."},{"last_name":"Kuznetsova","first_name":"I.","full_name":"Kuznetsova, I."},{"id":"344","full_name":"Meier, Torsten","last_name":"Meier","orcid":"0000-0001-8864-2072","first_name":"Torsten"},{"full_name":"Varga, I.","last_name":"Varga","first_name":"I."}],"publication_status":"published","date_updated":"2023-04-19T11:13:00Z","intvolume":" 18","language":[{"iso":"eng"}],"doi":"10.1002/andp.20095211219","publication":"Annalen der Physik","issue":"12","abstract":[{"text":"We discuss transport and localization properties on the insulating side of the disorder dominated superconductor-insulator transition, described in terms of the dirty boson model. Analyzing the spectral properties of the interacting bosons in the absence of phonons, we argue that the Bose glass phase admits three distinct regimes. For strongest disorder the boson system is a fully localized, perfect insulator at any temperature. At smaller disorder, only the low temperature phase exhibits perfect insulation while delocalization takes place above a finite temperature. We argue that a third phase must intervene between these perfect insulators and the superconductor. This conducting Bose glass phase is characterized by a mobility edge in the many body spectrum, located at finite energy above the ground state. In this insulating regime purely electronically activated transport occurs, with a conductivity following an Arrhenius law at asymptotically low temperatures, while a tendency to superactivation is predicted at higher T. These predictions are in good agreement with recent transport experiments in highly disordered films of superconducting materials.","lang":"eng"}],"date_created":"2021-09-24T08:06:30Z","type":"journal_article","department":[{"_id":"15"},{"_id":"170"},{"_id":"293"},{"_id":"230"}]},{"abstract":[{"lang":"eng","text":"We discuss transport and localization properties on the insulating side of the disorder dominated superconductor-insulator transition, described in terms of the dirty boson model. Analyzing the spectral properties of the interacting bosons in the absence of phonons, we argue that the Bose glass phase admits three distinct regimes. For strongest disorder the boson system is a fully localized, perfect insulator at any temperature. At smaller disorder, only the low temperature phase exhibits perfect insulation while delocalization takes place above a finite temperature. We argue that a third phase must intervene between these perfect insulators and the superconductor. This conducting Bose glass phase is characterized by a mobility edge in the many body spectrum, located at finite energy above the ground state. In this insulating regime purely electronically activated transport occurs, with a conductivity following an Arrhenius law at asymptotically low temperatures, while a tendency to superactivation is predicted at higher T. These predictions are in good agreement with recent transport experiments in highly disordered films of superconducting materials."}],"citation":{"mla":"Gögh, N., et al. “Localization of Excitons in Weakly Disordered Semiconductor Structures: A Model Study.” Annalen Der Physik, no. 12, 2010, pp. 905–09, doi:10.1002/andp.200910382.","ama":"Gögh N, Thomas P, Kuznetsova I, Meier T, Varga I. Localization of excitons in weakly disordered semiconductor structures: A model study. Annalen der Physik. 2010;(12):905-909. doi:10.1002/andp.200910382","bibtex":"@article{Gögh_Thomas_Kuznetsova_Meier_Varga_2010, title={Localization of excitons in weakly disordered semiconductor structures: A model study}, DOI={10.1002/andp.200910382}, number={12}, journal={Annalen der Physik}, author={Gögh, N. and Thomas, P. and Kuznetsova, I. and Meier, Torsten and Varga, I.}, year={2010}, pages={905–909} }","apa":"Gögh, N., Thomas, P., Kuznetsova, I., Meier, T., & Varga, I. (2010). Localization of excitons in weakly disordered semiconductor structures: A model study. Annalen Der Physik, 12, 905–909. https://doi.org/10.1002/andp.200910382","ieee":"N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, and I. Varga, “Localization of excitons in weakly disordered semiconductor structures: A model study,” Annalen der Physik, no. 12, pp. 905–909, 2010, doi: 10.1002/andp.200910382.","chicago":"Gögh, N., P. Thomas, I. Kuznetsova, Torsten Meier, and I. Varga. “Localization of Excitons in Weakly Disordered Semiconductor Structures: A Model Study.” Annalen Der Physik, no. 12 (2010): 905–9. https://doi.org/10.1002/andp.200910382.","short":"N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, I. Varga, Annalen Der Physik (2010) 905–909."},"issue":"12","publication":"Annalen der Physik","department":[{"_id":"15"},{"_id":"170"},{"_id":"293"},{"_id":"230"}],"type":"journal_article","date_created":"2021-08-24T08:58:35Z","publication_status":"published","date_updated":"2023-04-19T11:12:57Z","publication_identifier":{"issn":["0003-3804","1521-3889"]},"author":[{"full_name":"Gögh, N.","last_name":"Gögh","first_name":"N."},{"first_name":"P.","last_name":"Thomas","full_name":"Thomas, P."},{"full_name":"Kuznetsova, I.","last_name":"Kuznetsova","first_name":"I."},{"first_name":"Torsten","orcid":"0000-0001-8864-2072","last_name":"Meier","full_name":"Meier, Torsten","id":"344"},{"last_name":"Varga","first_name":"I.","full_name":"Varga, I."}],"year":"2010","title":"Localization of excitons in weakly disordered semiconductor structures: A model study","status":"public","user_id":"49063","doi":"10.1002/andp.200910382","language":[{"iso":"eng"}],"_id":"23480","page":"905-909"},{"type":"journal_article","department":[{"_id":"296"},{"_id":"35"},{"_id":"15"},{"_id":"170"}],"file":[{"date_updated":"2020-08-30T15:06:54Z","relation":"main_file","file_size":330212,"title":"Efficient implementation of the GW approximation within the all-electron FLAPW method","content_type":"application/pdf","file_id":"18559","creator":"schindlm","description":"© 2010 American Physical Society","access_level":"open_access","file_name":"PhysRevB.81.125102.pdf","date_created":"2020-08-28T11:29:11Z"}],"date_created":"2020-08-28T11:26:20Z","related_material":{"record":[{"id":"22761","relation":"other","status":"public"}]},"abstract":[{"text":"We present an implementation of the GW approximation for the electronic self-energy within the full-potential linearized augmented-plane-wave (FLAPW) method. The algorithm uses an all-electron mixed product basis for the representation of response matrices and related quantities. This basis is derived from the FLAPW basis and is exact for wave-function products. The correlation part of the self-energy is calculated on the imaginary-frequency axis with a subsequent analytic continuation to the real axis. As an alternative we can perform the frequency convolution of the Green function G and the dynamically screened Coulomb interaction W explicitly by a contour integration. The singularity of the bare and screened interaction potentials gives rise to a numerically important self-energy contribution, which we treat analytically to achieve good convergence with respect to the k-point sampling. As numerical realizations of the GW approximation typically suffer from the high computational expense required for the evaluation of the nonlocal and frequency-dependent self-energy, we demonstrate how the algorithm can be made very efficient by exploiting spatial and time-reversal symmetry as well as by applying an optimization of the mixed product basis that retains only the numerically important contributions of the electron-electron interaction. This optimization step reduces the basis size without compromising the accuracy and accelerates the code considerably. Furthermore, we demonstrate that one can employ an extrapolar approximation for high-lying states to reduce the number of empty states that must be taken into account explicitly in the construction of the polarization function and the self-energy. We show convergence tests, CPU timings, and results for prototype semiconductors and insulators as well as ferromagnetic nickel.","lang":"eng"}],"publication":"Physical Review B","issue":"12","doi":"10.1103/PhysRevB.81.125102","article_number":"125102","language":[{"iso":"eng"}],"publication_status":"published","date_updated":"2023-04-20T14:57:10Z","article_type":"original","intvolume":" 81","title":"Efficient implementation of the GW approximation within the all-electron FLAPW method","year":"2010","author":[{"last_name":"Friedrich","first_name":"Christoph","full_name":"Friedrich, Christoph"},{"first_name":"Stefan","last_name":"Blügel","full_name":"Blügel, Stefan"},{"full_name":"Schindlmayr, Arno","last_name":"Schindlmayr","first_name":"Arno","orcid":"0000-0002-4855-071X","id":"458"}],"publication_identifier":{"issn":["1098-0121"],"eissn":["1550-235X"]},"oa":"1","external_id":{"arxiv":["1003.0316"],"isi":["000276248900039"]},"quality_controlled":"1","file_date_updated":"2020-08-30T15:06:54Z","citation":{"short":"C. Friedrich, S. Blügel, A. Schindlmayr, Physical Review B 81 (2010).","chicago":"Friedrich, Christoph, Stefan Blügel, and Arno Schindlmayr. “Efficient Implementation of the GW Approximation within the All-Electron FLAPW Method.” Physical Review B 81, no. 12 (2010). https://doi.org/10.1103/PhysRevB.81.125102.","apa":"Friedrich, C., Blügel, S., & Schindlmayr, A. (2010). Efficient implementation of the GW approximation within the all-electron FLAPW method. Physical Review B, 81(12), Article 125102. https://doi.org/10.1103/PhysRevB.81.125102","ieee":"C. Friedrich, S. Blügel, and A. Schindlmayr, “Efficient implementation of the GW approximation within the all-electron FLAPW method,” Physical Review B, vol. 81, no. 12, Art. no. 125102, 2010, doi: 10.1103/PhysRevB.81.125102.","ama":"Friedrich C, Blügel S, Schindlmayr A. Efficient implementation of the GW approximation within the all-electron FLAPW method. Physical Review B. 2010;81(12). doi:10.1103/PhysRevB.81.125102","bibtex":"@article{Friedrich_Blügel_Schindlmayr_2010, title={Efficient implementation of the GW approximation within the all-electron FLAPW method}, volume={81}, DOI={10.1103/PhysRevB.81.125102}, number={12125102}, journal={Physical Review B}, publisher={American Physical Society}, author={Friedrich, Christoph and Blügel, Stefan and Schindlmayr, Arno}, year={2010} }","mla":"Friedrich, Christoph, et al. “Efficient Implementation of the GW Approximation within the All-Electron FLAPW Method.” Physical Review B, vol. 81, no. 12, 125102, American Physical Society, 2010, doi:10.1103/PhysRevB.81.125102."},"isi":"1","user_id":"16199","ddc":["530"],"volume":81,"_id":"18558","publisher":"American Physical Society","has_accepted_license":"1","status":"public"},{"language":[{"iso":"eng"}],"series_title":"Verhandlungen der Deutschen Physikalischen Gesellschaft","main_file_link":[{"url":"https://www.dpg-verhandlungen.de/year/2010/conference/regensburg/part/hl/session/5/contribution/6"}],"author":[{"full_name":"Meier, Torsten","first_name":"Torsten","last_name":"Meier","orcid":"0000-0001-8864-2072","id":"344"},{"first_name":"Huynh Thanh","last_name":"Duc","full_name":"Duc, Huynh Thanh"},{"full_name":"Foerstner, Jens","last_name":"Foerstner","first_name":"Jens"},{"full_name":"Priyadarshi, S.","last_name":"Priyadarshi","first_name":"S."},{"first_name":"Ana Maria","last_name":"Racu","full_name":"Racu, Ana Maria"},{"full_name":"Pierz, Klaus","first_name":"Klaus","last_name":"Pierz"},{"first_name":"Uwe","last_name":"Siegner","full_name":"Siegner, Uwe"},{"last_name":"Bieler","first_name":"Mark","full_name":"Bieler, Mark"}],"publication_identifier":{"issn":["0420-0195"]},"title":"Experimental and theoretical investigations of photocurrents in non-centrosymmetric semiconductor quantum wells","year":"2010","intvolume":" 45","date_updated":"2023-05-01T12:48:34Z","publication_status":"published","date_created":"2023-04-19T11:01:12Z","department":[{"_id":"293"}],"type":"conference","issue":"3","publication":"DPG Spring meeting 2010 ","abstract":[{"lang":"eng","text":"We compute photocurrents generated by femtosecond single-color laser pulses in non-centrosymmetric semiconductor quantum wells by combining a 14 x 14 k.p band structure theory with multi-band semiconductor Bloch equations. The transient photocurrents are investigated experimentally by measuring the associated Terahertz emission. The dependencies of the photocurrent and the Terahertz emission on the excitation conditions are discussed for (110)-oriented GaAs quantum wells. The comparison between theory and experiment shows a good agreement."}],"_id":"44064","volume":45,"user_id":"49063","conference":{"end_date":"2010-03-26","location":"Regensburg, Germany","name":"DPG Spring meeting 2010 ","start_date":"2010-03-21"},"status":"public","citation":{"short":"T. Meier, H.T. Duc, J. Foerstner, S. Priyadarshi, A.M. Racu, K. Pierz, U. Siegner, M. Bieler, in: DPG Spring Meeting 2010 , 2010.","chicago":"Meier, Torsten, Huynh Thanh Duc, Jens Foerstner, S. Priyadarshi, Ana Maria Racu, Klaus Pierz, Uwe Siegner, and Mark Bieler. “Experimental and Theoretical Investigations of Photocurrents in Non-Centrosymmetric Semiconductor Quantum Wells.” In DPG Spring Meeting 2010 , Vol. 45. Verhandlungen Der Deutschen Physikalischen Gesellschaft, 2010.","apa":"Meier, T., Duc, H. T., Foerstner, J., Priyadarshi, S., Racu, A. M., Pierz, K., Siegner, U., & Bieler, M. (2010). Experimental and theoretical investigations of photocurrents in non-centrosymmetric semiconductor quantum wells. DPG Spring Meeting 2010 , 45(3).","ieee":"T. Meier et al., “Experimental and theoretical investigations of photocurrents in non-centrosymmetric semiconductor quantum wells,” in DPG Spring meeting 2010 , Regensburg, Germany, 2010, vol. 45, no. 3.","ama":"Meier T, Duc HT, Foerstner J, et al. Experimental and theoretical investigations of photocurrents in non-centrosymmetric semiconductor quantum wells. In: DPG Spring Meeting 2010 . Vol 45. Verhandlungen der Deutschen Physikalischen Gesellschaft. ; 2010.","bibtex":"@inproceedings{Meier_Duc_Foerstner_Priyadarshi_Racu_Pierz_Siegner_Bieler_2010, series={Verhandlungen der Deutschen Physikalischen Gesellschaft}, title={Experimental and theoretical investigations of photocurrents in non-centrosymmetric semiconductor quantum wells}, volume={45}, number={3}, booktitle={DPG Spring meeting 2010 }, author={Meier, Torsten and Duc, Huynh Thanh and Foerstner, Jens and Priyadarshi, S. and Racu, Ana Maria and Pierz, Klaus and Siegner, Uwe and Bieler, Mark}, year={2010}, collection={Verhandlungen der Deutschen Physikalischen Gesellschaft} }","mla":"Meier, Torsten, et al. “Experimental and Theoretical Investigations of Photocurrents in Non-Centrosymmetric Semiconductor Quantum Wells.” DPG Spring Meeting 2010 , vol. 45, no. 3, 2010."}}]