[{"issue":"07","publication_status":"published","publication_identifier":{"issn":["0884-2914","2044-5326"]},"citation":{"ama":"Lei W, Notthoff C, Offer M, et al. Electron energy structure of self-assembled In(Ga)As nanostructures probed by capacitance-voltage spectroscopy and one-dimensional numerical simulation. <i>Journal of Materials Research</i>. 2009;24(07):2179-2184. doi:<a href=\"https://doi.org/10.1557/jmr.2009.0293\">10.1557/jmr.2009.0293</a>","chicago":"Lei, Wen, Christian Notthoff, Matthias Offer, Cedrik Meier, Axel Lorke, Chennupati Jagadish, and Andreas D. Wieck. “Electron Energy Structure of Self-Assembled In(Ga)As Nanostructures Probed by Capacitance-Voltage Spectroscopy and One-Dimensional Numerical Simulation.” <i>Journal of Materials Research</i> 24, no. 07 (2009): 2179–84. <a href=\"https://doi.org/10.1557/jmr.2009.0293\">https://doi.org/10.1557/jmr.2009.0293</a>.","ieee":"W. Lei <i>et al.</i>, “Electron energy structure of self-assembled In(Ga)As nanostructures probed by capacitance-voltage spectroscopy and one-dimensional numerical simulation,” <i>Journal of Materials Research</i>, vol. 24, no. 07, pp. 2179–2184, 2009.","apa":"Lei, W., Notthoff, C., Offer, M., Meier, C., Lorke, A., Jagadish, C., &#38; Wieck, A. D. (2009). Electron energy structure of self-assembled In(Ga)As nanostructures probed by capacitance-voltage spectroscopy and one-dimensional numerical simulation. <i>Journal of Materials Research</i>, <i>24</i>(07), 2179–2184. <a href=\"https://doi.org/10.1557/jmr.2009.0293\">https://doi.org/10.1557/jmr.2009.0293</a>","bibtex":"@article{Lei_Notthoff_Offer_Meier_Lorke_Jagadish_Wieck_2009, title={Electron energy structure of self-assembled In(Ga)As nanostructures probed by capacitance-voltage spectroscopy and one-dimensional numerical simulation}, volume={24}, DOI={<a href=\"https://doi.org/10.1557/jmr.2009.0293\">10.1557/jmr.2009.0293</a>}, number={07}, journal={Journal of Materials Research}, publisher={Cambridge University Press (CUP)}, author={Lei, Wen and Notthoff, Christian and Offer, Matthias and Meier, Cedrik and Lorke, Axel and Jagadish, Chennupati and Wieck, Andreas D.}, year={2009}, pages={2179–2184} }","short":"W. Lei, C. Notthoff, M. Offer, C. Meier, A. Lorke, C. Jagadish, A.D. Wieck, Journal of Materials Research 24 (2009) 2179–2184.","mla":"Lei, Wen, et al. “Electron Energy Structure of Self-Assembled In(Ga)As Nanostructures Probed by Capacitance-Voltage Spectroscopy and One-Dimensional Numerical Simulation.” <i>Journal of Materials Research</i>, vol. 24, no. 07, Cambridge University Press (CUP), 2009, pp. 2179–84, doi:<a href=\"https://doi.org/10.1557/jmr.2009.0293\">10.1557/jmr.2009.0293</a>."},"page":"2179-2184","intvolume":"        24","year":"2009","author":[{"first_name":"Wen","last_name":"Lei","full_name":"Lei, Wen"},{"full_name":"Notthoff, Christian","last_name":"Notthoff","first_name":"Christian"},{"first_name":"Matthias","last_name":"Offer","full_name":"Offer, Matthias"},{"first_name":"Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier","id":"20798","full_name":"Meier, Cedrik"},{"first_name":"Axel","full_name":"Lorke, Axel","last_name":"Lorke"},{"first_name":"Chennupati","full_name":"Jagadish, Chennupati","last_name":"Jagadish"},{"first_name":"Andreas D.","last_name":"Wieck","full_name":"Wieck, Andreas D."}],"date_created":"2019-02-04T14:46:14Z","volume":24,"publisher":"Cambridge University Press (CUP)","date_updated":"2022-01-06T07:03:39Z","doi":"10.1557/jmr.2009.0293","title":"Electron energy structure of self-assembled In(Ga)As nanostructures probed by capacitance-voltage spectroscopy and one-dimensional numerical simulation","type":"journal_article","publication":"Journal of Materials Research","status":"public","user_id":"20798","department":[{"_id":"15"},{"_id":"230"},{"_id":"287"},{"_id":"35"}],"_id":"7498","language":[{"iso":"eng"}]},{"citation":{"ama":"Huba K, Krix D, Meier C, Nienhaus H. Ultrathin K∕p-Si(001) Schottky diodes as detectors of chemically generated hot charge carriers. <i>Journal of Vacuum Science &#38; Technology A: Vacuum, Surfaces, and Films</i>. 2009;27(4):889-894. doi:<a href=\"https://doi.org/10.1116/1.3100218\">10.1116/1.3100218</a>","ieee":"K. Huba, D. Krix, C. Meier, and H. Nienhaus, “Ultrathin K∕p-Si(001) Schottky diodes as detectors of chemically generated hot charge carriers,” <i>Journal of Vacuum Science &#38; Technology A: Vacuum, Surfaces, and Films</i>, vol. 27, no. 4, pp. 889–894, 2009.","chicago":"Huba, K., D. Krix, Cedrik Meier, and H. Nienhaus. “Ultrathin K∕p-Si(001) Schottky Diodes as Detectors of Chemically Generated Hot Charge Carriers.” <i>Journal of Vacuum Science &#38; Technology A: Vacuum, Surfaces, and Films</i> 27, no. 4 (2009): 889–94. <a href=\"https://doi.org/10.1116/1.3100218\">https://doi.org/10.1116/1.3100218</a>.","short":"K. Huba, D. Krix, C. Meier, H. Nienhaus, Journal of Vacuum Science &#38; Technology A: Vacuum, Surfaces, and Films 27 (2009) 889–894.","mla":"Huba, K., et al. “Ultrathin K∕p-Si(001) Schottky Diodes as Detectors of Chemically Generated Hot Charge Carriers.” <i>Journal of Vacuum Science &#38; Technology A: Vacuum, Surfaces, and Films</i>, vol. 27, no. 4, American Vacuum Society, 2009, pp. 889–94, doi:<a href=\"https://doi.org/10.1116/1.3100218\">10.1116/1.3100218</a>.","bibtex":"@article{Huba_Krix_Meier_Nienhaus_2009, title={Ultrathin K∕p-Si(001) Schottky diodes as detectors of chemically generated hot charge carriers}, volume={27}, DOI={<a href=\"https://doi.org/10.1116/1.3100218\">10.1116/1.3100218</a>}, number={4}, journal={Journal of Vacuum Science &#38; Technology A: Vacuum, Surfaces, and Films}, publisher={American Vacuum Society}, author={Huba, K. and Krix, D. and Meier, Cedrik and Nienhaus, H.}, year={2009}, pages={889–894} }","apa":"Huba, K., Krix, D., Meier, C., &#38; Nienhaus, H. (2009). Ultrathin K∕p-Si(001) Schottky diodes as detectors of chemically generated hot charge carriers. <i>Journal of Vacuum Science &#38; Technology A: Vacuum, Surfaces, and Films</i>, <i>27</i>(4), 889–894. <a href=\"https://doi.org/10.1116/1.3100218\">https://doi.org/10.1116/1.3100218</a>"},"page":"889-894","intvolume":"        27","year":"2009","issue":"4","publication_status":"published","publication_identifier":{"issn":["0734-2101","1520-8559"]},"doi":"10.1116/1.3100218","title":"Ultrathin K∕p-Si(001) Schottky diodes as detectors of chemically generated hot charge carriers","date_created":"2019-02-04T14:47:36Z","author":[{"first_name":"K.","last_name":"Huba","full_name":"Huba, K."},{"full_name":"Krix, D.","last_name":"Krix","first_name":"D."},{"orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier","id":"20798","full_name":"Meier, Cedrik","first_name":"Cedrik"},{"full_name":"Nienhaus, H.","last_name":"Nienhaus","first_name":"H."}],"volume":27,"date_updated":"2022-01-06T07:03:39Z","publisher":"American Vacuum Society","status":"public","type":"journal_article","publication":"Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films","language":[{"iso":"eng"}],"user_id":"20798","department":[{"_id":"15"},{"_id":"230"},{"_id":"287"},{"_id":"35"}],"_id":"7499"},{"publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"citation":{"ama":"Wilde MA, Reuter D, Heyn C, Wieck AD, Grundler D. Inversion-asymmetry-induced spin splitting observed in the quantum oscillatory magnetization of a two-dimensional electron system. <i>Physical Review B</i>. 2009. doi:<a href=\"https://doi.org/10.1103/physrevb.79.125330\">10.1103/physrevb.79.125330</a>","chicago":"Wilde, M. A., Dirk Reuter, Ch. Heyn, A. D. Wieck, and D. Grundler. “Inversion-Asymmetry-Induced Spin Splitting Observed in the Quantum Oscillatory Magnetization of a Two-Dimensional Electron System.” <i>Physical Review B</i>, 2009. <a href=\"https://doi.org/10.1103/physrevb.79.125330\">https://doi.org/10.1103/physrevb.79.125330</a>.","ieee":"M. A. Wilde, D. Reuter, C. Heyn, A. D. Wieck, and D. Grundler, “Inversion-asymmetry-induced spin splitting observed in the quantum oscillatory magnetization of a two-dimensional electron system,” <i>Physical Review B</i>, 2009.","apa":"Wilde, M. A., Reuter, D., Heyn, C., Wieck, A. D., &#38; Grundler, D. (2009). Inversion-asymmetry-induced spin splitting observed in the quantum oscillatory magnetization of a two-dimensional electron system. <i>Physical Review B</i>. <a href=\"https://doi.org/10.1103/physrevb.79.125330\">https://doi.org/10.1103/physrevb.79.125330</a>","short":"M.A. Wilde, D. Reuter, C. Heyn, A.D. Wieck, D. Grundler, Physical Review B (2009).","bibtex":"@article{Wilde_Reuter_Heyn_Wieck_Grundler_2009, title={Inversion-asymmetry-induced spin splitting observed in the quantum oscillatory magnetization of a two-dimensional electron system}, DOI={<a href=\"https://doi.org/10.1103/physrevb.79.125330\">10.1103/physrevb.79.125330</a>}, journal={Physical Review B}, author={Wilde, M. A. and Reuter, Dirk and Heyn, Ch. and Wieck, A. D. and Grundler, D.}, year={2009} }","mla":"Wilde, M. A., et al. “Inversion-Asymmetry-Induced Spin Splitting Observed in the Quantum Oscillatory Magnetization of a Two-Dimensional Electron System.” <i>Physical Review B</i>, 2009, doi:<a href=\"https://doi.org/10.1103/physrevb.79.125330\">10.1103/physrevb.79.125330</a>."},"year":"2009","author":[{"first_name":"M. A.","last_name":"Wilde","full_name":"Wilde, M. A."},{"last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763","first_name":"Dirk"},{"last_name":"Heyn","full_name":"Heyn, Ch.","first_name":"Ch."},{"first_name":"A. D.","last_name":"Wieck","full_name":"Wieck, A. D."},{"first_name":"D.","full_name":"Grundler, D.","last_name":"Grundler"}],"date_created":"2019-03-26T07:58:30Z","date_updated":"2022-01-06T07:03:57Z","doi":"10.1103/physrevb.79.125330","title":"Inversion-asymmetry-induced spin splitting observed in the quantum oscillatory magnetization of a two-dimensional electron system","type":"journal_article","publication":"Physical Review B","status":"public","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"8578","language":[{"iso":"eng"}]},{"department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","_id":"8579","language":[{"iso":"eng"}],"article_number":"022107","publication":"Applied Physics Letters","type":"journal_article","status":"public","author":[{"full_name":"Buchholz, S. S.","last_name":"Buchholz","first_name":"S. S."},{"full_name":"Fischer, S. F.","last_name":"Fischer","first_name":"S. F."},{"first_name":"U.","full_name":"Kunze, U.","last_name":"Kunze"},{"first_name":"Dirk","id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter"},{"first_name":"A. D.","last_name":"Wieck","full_name":"Wieck, A. D."}],"date_created":"2019-03-26T08:34:37Z","date_updated":"2022-01-06T07:03:57Z","doi":"10.1063/1.3069281","title":"Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring","publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","citation":{"apa":"Buchholz, S. S., Fischer, S. F., Kunze, U., Reuter, D., &#38; Wieck, A. D. (2009). Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.3069281\">https://doi.org/10.1063/1.3069281</a>","short":"S.S. Buchholz, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters (2009).","bibtex":"@article{Buchholz_Fischer_Kunze_Reuter_Wieck_2009, title={Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring}, DOI={<a href=\"https://doi.org/10.1063/1.3069281\">10.1063/1.3069281</a>}, number={022107}, journal={Applied Physics Letters}, author={Buchholz, S. S. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2009} }","mla":"Buchholz, S. S., et al. “Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.” <i>Applied Physics Letters</i>, 022107, 2009, doi:<a href=\"https://doi.org/10.1063/1.3069281\">10.1063/1.3069281</a>.","chicago":"Buchholz, S. S., S. F. Fischer, U. Kunze, Dirk Reuter, and A. D. Wieck. “Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.” <i>Applied Physics Letters</i>, 2009. <a href=\"https://doi.org/10.1063/1.3069281\">https://doi.org/10.1063/1.3069281</a>.","ieee":"S. S. Buchholz, S. F. Fischer, U. Kunze, D. Reuter, and A. D. Wieck, “Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring,” <i>Applied Physics Letters</i>, 2009.","ama":"Buchholz SS, Fischer SF, Kunze U, Reuter D, Wieck AD. Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring. <i>Applied Physics Letters</i>. 2009. doi:<a href=\"https://doi.org/10.1063/1.3069281\">10.1063/1.3069281</a>"},"year":"2009"},{"citation":{"bibtex":"@article{Blokland_Bozkurt_Ulloa_Reuter_Wieck_Koenraad_Christianen_Maan_2009, title={Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy}, DOI={<a href=\"https://doi.org/10.1063/1.3072366\">10.1063/1.3072366</a>}, number={023107}, journal={Applied Physics Letters}, author={Blokland, J. H. and Bozkurt, M. and Ulloa, J. M. and Reuter, Dirk and Wieck, A. D. and Koenraad, P. M. and Christianen, P. C. M. and Maan, J. C.}, year={2009} }","mla":"Blokland, J. H., et al. “Ellipsoidal InAs Quantum Dots Observed by Cross-Sectional Scanning Tunneling Microscopy.” <i>Applied Physics Letters</i>, 023107, 2009, doi:<a href=\"https://doi.org/10.1063/1.3072366\">10.1063/1.3072366</a>.","short":"J.H. Blokland, M. Bozkurt, J.M. Ulloa, D. Reuter, A.D. Wieck, P.M. Koenraad, P.C.M. Christianen, J.C. Maan, Applied Physics Letters (2009).","apa":"Blokland, J. H., Bozkurt, M., Ulloa, J. M., Reuter, D., Wieck, A. D., Koenraad, P. M., … Maan, J. C. (2009). Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.3072366\">https://doi.org/10.1063/1.3072366</a>","ama":"Blokland JH, Bozkurt M, Ulloa JM, et al. Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy. <i>Applied Physics Letters</i>. 2009. doi:<a href=\"https://doi.org/10.1063/1.3072366\">10.1063/1.3072366</a>","chicago":"Blokland, J. H., M. Bozkurt, J. M. Ulloa, Dirk Reuter, A. D. Wieck, P. M. Koenraad, P. C. M. Christianen, and J. C. Maan. “Ellipsoidal InAs Quantum Dots Observed by Cross-Sectional Scanning Tunneling Microscopy.” <i>Applied Physics Letters</i>, 2009. <a href=\"https://doi.org/10.1063/1.3072366\">https://doi.org/10.1063/1.3072366</a>.","ieee":"J. H. Blokland <i>et al.</i>, “Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy,” <i>Applied Physics Letters</i>, 2009."},"year":"2009","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"doi":"10.1063/1.3072366","title":"Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy","date_created":"2019-03-26T08:42:07Z","author":[{"first_name":"J. H.","full_name":"Blokland, J. H.","last_name":"Blokland"},{"last_name":"Bozkurt","full_name":"Bozkurt, M.","first_name":"M."},{"first_name":"J. M.","full_name":"Ulloa, J. M.","last_name":"Ulloa"},{"last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763","first_name":"Dirk"},{"first_name":"A. D.","full_name":"Wieck, A. D.","last_name":"Wieck"},{"full_name":"Koenraad, P. M.","last_name":"Koenraad","first_name":"P. M."},{"full_name":"Christianen, P. C. M.","last_name":"Christianen","first_name":"P. C. M."},{"full_name":"Maan, J. C.","last_name":"Maan","first_name":"J. C."}],"date_updated":"2022-01-06T07:03:57Z","status":"public","type":"journal_article","publication":"Applied Physics Letters","language":[{"iso":"eng"}],"article_number":"023107","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"8580"},{"type":"journal_article","publication":"Physical Review B","status":"public","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"8581","language":[{"iso":"eng"}],"publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"citation":{"bibtex":"@article{Greilich_Spatzek_Yugova_Akimov_Yakovlev_Efros_Reuter_Wieck_Bayer_2009, title={Collective single-mode precession of electron spins in an ensemble of singly charged (In,Ga)As/GaAs quantum dots}, DOI={<a href=\"https://doi.org/10.1103/physrevb.79.201305\">10.1103/physrevb.79.201305</a>}, journal={Physical Review B}, author={Greilich, A. and Spatzek, S. and Yugova, I. A. and Akimov, I. A. and Yakovlev, D. R. and Efros, Al. L. and Reuter, Dirk and Wieck, A. D. and Bayer, M.}, year={2009} }","mla":"Greilich, A., et al. “Collective Single-Mode Precession of Electron Spins in an Ensemble of Singly Charged (In,Ga)As/GaAs Quantum Dots.” <i>Physical Review B</i>, 2009, doi:<a href=\"https://doi.org/10.1103/physrevb.79.201305\">10.1103/physrevb.79.201305</a>.","short":"A. Greilich, S. Spatzek, I.A. Yugova, I.A. Akimov, D.R. Yakovlev, A.L. Efros, D. Reuter, A.D. Wieck, M. Bayer, Physical Review B (2009).","apa":"Greilich, A., Spatzek, S., Yugova, I. A., Akimov, I. A., Yakovlev, D. R., Efros, A. L., … Bayer, M. (2009). Collective single-mode precession of electron spins in an ensemble of singly charged (In,Ga)As/GaAs quantum dots. <i>Physical Review B</i>. <a href=\"https://doi.org/10.1103/physrevb.79.201305\">https://doi.org/10.1103/physrevb.79.201305</a>","ama":"Greilich A, Spatzek S, Yugova IA, et al. Collective single-mode precession of electron spins in an ensemble of singly charged (In,Ga)As/GaAs quantum dots. <i>Physical Review B</i>. 2009. doi:<a href=\"https://doi.org/10.1103/physrevb.79.201305\">10.1103/physrevb.79.201305</a>","chicago":"Greilich, A., S. Spatzek, I. A. Yugova, I. A. Akimov, D. R. Yakovlev, Al. L. Efros, Dirk Reuter, A. D. Wieck, and M. Bayer. “Collective Single-Mode Precession of Electron Spins in an Ensemble of Singly Charged (In,Ga)As/GaAs Quantum Dots.” <i>Physical Review B</i>, 2009. <a href=\"https://doi.org/10.1103/physrevb.79.201305\">https://doi.org/10.1103/physrevb.79.201305</a>.","ieee":"A. Greilich <i>et al.</i>, “Collective single-mode precession of electron spins in an ensemble of singly charged (In,Ga)As/GaAs quantum dots,” <i>Physical Review B</i>, 2009."},"year":"2009","date_created":"2019-03-26T08:43:41Z","author":[{"first_name":"A.","last_name":"Greilich","full_name":"Greilich, A."},{"first_name":"S.","last_name":"Spatzek","full_name":"Spatzek, S."},{"first_name":"I. A.","full_name":"Yugova, I. A.","last_name":"Yugova"},{"first_name":"I. A.","full_name":"Akimov, I. A.","last_name":"Akimov"},{"last_name":"Yakovlev","full_name":"Yakovlev, D. R.","first_name":"D. R."},{"full_name":"Efros, Al. L.","last_name":"Efros","first_name":"Al. L."},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"last_name":"Wieck","full_name":"Wieck, A. D.","first_name":"A. D."},{"last_name":"Bayer","full_name":"Bayer, M.","first_name":"M."}],"date_updated":"2022-01-06T07:03:57Z","doi":"10.1103/physrevb.79.201305","title":"Collective single-mode precession of electron spins in an ensemble of singly charged (In,Ga)As/GaAs quantum dots"},{"publication":"Nature Physics","type":"journal_article","status":"public","_id":"8582","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","language":[{"iso":"eng"}],"publication_identifier":{"issn":["1745-2473","1745-2481"]},"publication_status":"published","year":"2009","page":"262-266","citation":{"apa":"Greilich, A., Economou, S. E., Spatzek, S., Yakovlev, D. R., Reuter, D., Wieck, A. D., … Bayer, M. (2009). Ultrafast optical rotations of electron spins in quantum dots. <i>Nature Physics</i>, 262–266. <a href=\"https://doi.org/10.1038/nphys1226\">https://doi.org/10.1038/nphys1226</a>","bibtex":"@article{Greilich_Economou_Spatzek_Yakovlev_Reuter_Wieck_Reinecke_Bayer_2009, title={Ultrafast optical rotations of electron spins in quantum dots}, DOI={<a href=\"https://doi.org/10.1038/nphys1226\">10.1038/nphys1226</a>}, journal={Nature Physics}, author={Greilich, A. and Economou, Sophia E. and Spatzek, S. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Reinecke, T. L. and Bayer, M.}, year={2009}, pages={262–266} }","short":"A. Greilich, S.E. Economou, S. Spatzek, D.R. Yakovlev, D. Reuter, A.D. Wieck, T.L. Reinecke, M. Bayer, Nature Physics (2009) 262–266.","mla":"Greilich, A., et al. “Ultrafast Optical Rotations of Electron Spins in Quantum Dots.” <i>Nature Physics</i>, 2009, pp. 262–66, doi:<a href=\"https://doi.org/10.1038/nphys1226\">10.1038/nphys1226</a>.","ieee":"A. Greilich <i>et al.</i>, “Ultrafast optical rotations of electron spins in quantum dots,” <i>Nature Physics</i>, pp. 262–266, 2009.","chicago":"Greilich, A., Sophia E. Economou, S. Spatzek, D. R. Yakovlev, Dirk Reuter, A. D. Wieck, T. L. Reinecke, and M. Bayer. “Ultrafast Optical Rotations of Electron Spins in Quantum Dots.” <i>Nature Physics</i>, 2009, 262–66. <a href=\"https://doi.org/10.1038/nphys1226\">https://doi.org/10.1038/nphys1226</a>.","ama":"Greilich A, Economou SE, Spatzek S, et al. Ultrafast optical rotations of electron spins in quantum dots. <i>Nature Physics</i>. 2009:262-266. doi:<a href=\"https://doi.org/10.1038/nphys1226\">10.1038/nphys1226</a>"},"date_updated":"2022-01-06T07:03:57Z","date_created":"2019-03-26T08:51:07Z","author":[{"first_name":"A.","full_name":"Greilich, A.","last_name":"Greilich"},{"last_name":"Economou","full_name":"Economou, Sophia E.","first_name":"Sophia E."},{"last_name":"Spatzek","full_name":"Spatzek, S.","first_name":"S."},{"last_name":"Yakovlev","full_name":"Yakovlev, D. R.","first_name":"D. R."},{"first_name":"Dirk","id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter"},{"first_name":"A. D.","full_name":"Wieck, A. D.","last_name":"Wieck"},{"first_name":"T. L.","last_name":"Reinecke","full_name":"Reinecke, T. L."},{"full_name":"Bayer, M.","last_name":"Bayer","first_name":"M."}],"title":"Ultrafast optical rotations of electron spins in quantum dots","doi":"10.1038/nphys1226"},{"status":"public","publication":"Physical Review Letters","type":"journal_article","language":[{"iso":"eng"}],"_id":"8583","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","year":"2009","citation":{"ama":"Yugova IA, Sokolova AA, Yakovlev DR, et al. Long-Term Hole Spin Memory in the Resonantly Amplified Spin Coherence ofInGaAs/GaAsQuantum Well Electrons. <i>Physical Review Letters</i>. 2009. doi:<a href=\"https://doi.org/10.1103/physrevlett.102.167402\">10.1103/physrevlett.102.167402</a>","chicago":"Yugova, I. A., A. A. Sokolova, D. R. Yakovlev, A. Greilich, Dirk Reuter, A. D. Wieck, and M. Bayer. “Long-Term Hole Spin Memory in the Resonantly Amplified Spin Coherence OfInGaAs/GaAsQuantum Well Electrons.” <i>Physical Review Letters</i>, 2009. <a href=\"https://doi.org/10.1103/physrevlett.102.167402\">https://doi.org/10.1103/physrevlett.102.167402</a>.","ieee":"I. A. Yugova <i>et al.</i>, “Long-Term Hole Spin Memory in the Resonantly Amplified Spin Coherence ofInGaAs/GaAsQuantum Well Electrons,” <i>Physical Review Letters</i>, 2009.","bibtex":"@article{Yugova_Sokolova_Yakovlev_Greilich_Reuter_Wieck_Bayer_2009, title={Long-Term Hole Spin Memory in the Resonantly Amplified Spin Coherence ofInGaAs/GaAsQuantum Well Electrons}, DOI={<a href=\"https://doi.org/10.1103/physrevlett.102.167402\">10.1103/physrevlett.102.167402</a>}, journal={Physical Review Letters}, author={Yugova, I. A. and Sokolova, A. A. and Yakovlev, D. R. and Greilich, A. and Reuter, Dirk and Wieck, A. D. and Bayer, M.}, year={2009} }","mla":"Yugova, I. A., et al. “Long-Term Hole Spin Memory in the Resonantly Amplified Spin Coherence OfInGaAs/GaAsQuantum Well Electrons.” <i>Physical Review Letters</i>, 2009, doi:<a href=\"https://doi.org/10.1103/physrevlett.102.167402\">10.1103/physrevlett.102.167402</a>.","short":"I.A. Yugova, A.A. Sokolova, D.R. Yakovlev, A. Greilich, D. Reuter, A.D. Wieck, M. Bayer, Physical Review Letters (2009).","apa":"Yugova, I. A., Sokolova, A. A., Yakovlev, D. R., Greilich, A., Reuter, D., Wieck, A. D., &#38; Bayer, M. (2009). Long-Term Hole Spin Memory in the Resonantly Amplified Spin Coherence ofInGaAs/GaAsQuantum Well Electrons. <i>Physical Review Letters</i>. <a href=\"https://doi.org/10.1103/physrevlett.102.167402\">https://doi.org/10.1103/physrevlett.102.167402</a>"},"publication_identifier":{"issn":["0031-9007","1079-7114"]},"publication_status":"published","title":"Long-Term Hole Spin Memory in the Resonantly Amplified Spin Coherence ofInGaAs/GaAsQuantum Well Electrons","doi":"10.1103/physrevlett.102.167402","date_updated":"2022-01-06T07:03:57Z","author":[{"first_name":"I. A.","full_name":"Yugova, I. A.","last_name":"Yugova"},{"last_name":"Sokolova","full_name":"Sokolova, A. A.","first_name":"A. A."},{"first_name":"D. R.","full_name":"Yakovlev, D. R.","last_name":"Yakovlev"},{"first_name":"A.","last_name":"Greilich","full_name":"Greilich, A."},{"last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763","first_name":"Dirk"},{"first_name":"A. D.","full_name":"Wieck, A. D.","last_name":"Wieck"},{"last_name":"Bayer","full_name":"Bayer, M.","first_name":"M."}],"date_created":"2019-03-26T08:52:30Z"},{"title":"Inversion-asymmetry-induced spin splitting observed in the quantum oscillatory magnetization of a two-dimensional electron system","doi":"10.1103/physrevb.79.125330","date_updated":"2022-01-06T07:03:57Z","author":[{"full_name":"Wilde, M. A.","last_name":"Wilde","first_name":"M. A."},{"full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter","first_name":"Dirk"},{"full_name":"Heyn, Ch.","last_name":"Heyn","first_name":"Ch."},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."},{"first_name":"D.","full_name":"Grundler, D.","last_name":"Grundler"}],"date_created":"2019-03-26T08:53:21Z","year":"2009","citation":{"bibtex":"@article{Wilde_Reuter_Heyn_Wieck_Grundler_2009, title={Inversion-asymmetry-induced spin splitting observed in the quantum oscillatory magnetization of a two-dimensional electron system}, DOI={<a href=\"https://doi.org/10.1103/physrevb.79.125330\">10.1103/physrevb.79.125330</a>}, journal={Physical Review B}, author={Wilde, M. A. and Reuter, Dirk and Heyn, Ch. and Wieck, A. D. and Grundler, D.}, year={2009} }","mla":"Wilde, M. A., et al. “Inversion-Asymmetry-Induced Spin Splitting Observed in the Quantum Oscillatory Magnetization of a Two-Dimensional Electron System.” <i>Physical Review B</i>, 2009, doi:<a href=\"https://doi.org/10.1103/physrevb.79.125330\">10.1103/physrevb.79.125330</a>.","short":"M.A. Wilde, D. Reuter, C. Heyn, A.D. Wieck, D. Grundler, Physical Review B (2009).","apa":"Wilde, M. A., Reuter, D., Heyn, C., Wieck, A. D., &#38; Grundler, D. (2009). Inversion-asymmetry-induced spin splitting observed in the quantum oscillatory magnetization of a two-dimensional electron system. <i>Physical Review B</i>. <a href=\"https://doi.org/10.1103/physrevb.79.125330\">https://doi.org/10.1103/physrevb.79.125330</a>","ama":"Wilde MA, Reuter D, Heyn C, Wieck AD, Grundler D. Inversion-asymmetry-induced spin splitting observed in the quantum oscillatory magnetization of a two-dimensional electron system. <i>Physical Review B</i>. 2009. doi:<a href=\"https://doi.org/10.1103/physrevb.79.125330\">10.1103/physrevb.79.125330</a>","ieee":"M. A. Wilde, D. Reuter, C. Heyn, A. D. Wieck, and D. Grundler, “Inversion-asymmetry-induced spin splitting observed in the quantum oscillatory magnetization of a two-dimensional electron system,” <i>Physical Review B</i>, 2009.","chicago":"Wilde, M. A., Dirk Reuter, Ch. Heyn, A. D. Wieck, and D. Grundler. “Inversion-Asymmetry-Induced Spin Splitting Observed in the Quantum Oscillatory Magnetization of a Two-Dimensional Electron System.” <i>Physical Review B</i>, 2009. <a href=\"https://doi.org/10.1103/physrevb.79.125330\">https://doi.org/10.1103/physrevb.79.125330</a>."},"publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","language":[{"iso":"eng"}],"_id":"8584","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","status":"public","publication":"Physical Review B","type":"journal_article"},{"status":"public","publication":"Applied Physics Letters","type":"journal_article","article_number":"022113","language":[{"iso":"eng"}],"_id":"8585","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","year":"2009","citation":{"bibtex":"@article{Marquardt_Geller_Lorke_Reuter_Wieck_2009, title={Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots}, DOI={<a href=\"https://doi.org/10.1063/1.3175724\">10.1063/1.3175724</a>}, number={022113}, journal={Applied Physics Letters}, author={Marquardt, B. and Geller, M. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}, year={2009} }","short":"B. Marquardt, M. Geller, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters (2009).","mla":"Marquardt, B., et al. “Using a Two-Dimensional Electron Gas to Study Nonequilibrium Tunneling Dynamics and Charge Storage in Self-Assembled Quantum Dots.” <i>Applied Physics Letters</i>, 022113, 2009, doi:<a href=\"https://doi.org/10.1063/1.3175724\">10.1063/1.3175724</a>.","apa":"Marquardt, B., Geller, M., Lorke, A., Reuter, D., &#38; Wieck, A. D. (2009). Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.3175724\">https://doi.org/10.1063/1.3175724</a>","ama":"Marquardt B, Geller M, Lorke A, Reuter D, Wieck AD. Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots. <i>Applied Physics Letters</i>. 2009. doi:<a href=\"https://doi.org/10.1063/1.3175724\">10.1063/1.3175724</a>","ieee":"B. Marquardt, M. Geller, A. Lorke, D. Reuter, and A. D. Wieck, “Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots,” <i>Applied Physics Letters</i>, 2009.","chicago":"Marquardt, B., M. Geller, A. Lorke, Dirk Reuter, and A. D. Wieck. “Using a Two-Dimensional Electron Gas to Study Nonequilibrium Tunneling Dynamics and Charge Storage in Self-Assembled Quantum Dots.” <i>Applied Physics Letters</i>, 2009. <a href=\"https://doi.org/10.1063/1.3175724\">https://doi.org/10.1063/1.3175724</a>."},"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","title":"Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots","doi":"10.1063/1.3175724","date_updated":"2022-01-06T07:03:57Z","author":[{"first_name":"B.","full_name":"Marquardt, B.","last_name":"Marquardt"},{"last_name":"Geller","full_name":"Geller, M.","first_name":"M."},{"full_name":"Lorke, A.","last_name":"Lorke","first_name":"A."},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"first_name":"A. D.","last_name":"Wieck","full_name":"Wieck, A. D."}],"date_created":"2019-03-26T08:55:40Z"},{"title":"Conversion of bound excitons to free excitons by surface acoustic waves","doi":"10.1103/physrevb.80.165307","date_updated":"2022-01-06T07:03:57Z","date_created":"2019-03-26T08:56:38Z","author":[{"first_name":"S.","full_name":"Völk, S.","last_name":"Völk"},{"full_name":"Wixforth, A.","last_name":"Wixforth","first_name":"A."},{"full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter","first_name":"Dirk"},{"first_name":"A. D.","full_name":"Wieck, A. D.","last_name":"Wieck"},{"first_name":"J.","last_name":"Ebbecke","full_name":"Ebbecke, J."}],"year":"2009","citation":{"ama":"Völk S, Wixforth A, Reuter D, Wieck AD, Ebbecke J. Conversion of bound excitons to free excitons by surface acoustic waves. <i>Physical Review B</i>. 2009. doi:<a href=\"https://doi.org/10.1103/physrevb.80.165307\">10.1103/physrevb.80.165307</a>","ieee":"S. Völk, A. Wixforth, D. Reuter, A. D. Wieck, and J. Ebbecke, “Conversion of bound excitons to free excitons by surface acoustic waves,” <i>Physical Review B</i>, 2009.","chicago":"Völk, S., A. Wixforth, Dirk Reuter, A. D. Wieck, and J. Ebbecke. “Conversion of Bound Excitons to Free Excitons by Surface Acoustic Waves.” <i>Physical Review B</i>, 2009. <a href=\"https://doi.org/10.1103/physrevb.80.165307\">https://doi.org/10.1103/physrevb.80.165307</a>.","bibtex":"@article{Völk_Wixforth_Reuter_Wieck_Ebbecke_2009, title={Conversion of bound excitons to free excitons by surface acoustic waves}, DOI={<a href=\"https://doi.org/10.1103/physrevb.80.165307\">10.1103/physrevb.80.165307</a>}, journal={Physical Review B}, author={Völk, S. and Wixforth, A. and Reuter, Dirk and Wieck, A. D. and Ebbecke, J.}, year={2009} }","short":"S. Völk, A. Wixforth, D. Reuter, A.D. Wieck, J. Ebbecke, Physical Review B (2009).","mla":"Völk, S., et al. “Conversion of Bound Excitons to Free Excitons by Surface Acoustic Waves.” <i>Physical Review B</i>, 2009, doi:<a href=\"https://doi.org/10.1103/physrevb.80.165307\">10.1103/physrevb.80.165307</a>.","apa":"Völk, S., Wixforth, A., Reuter, D., Wieck, A. D., &#38; Ebbecke, J. (2009). Conversion of bound excitons to free excitons by surface acoustic waves. <i>Physical Review B</i>. <a href=\"https://doi.org/10.1103/physrevb.80.165307\">https://doi.org/10.1103/physrevb.80.165307</a>"},"publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"language":[{"iso":"eng"}],"_id":"8586","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"status":"public","type":"journal_article","publication":"Physical Review B"},{"language":[{"iso":"eng"}],"user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"8587","status":"public","type":"journal_article","publication":"Physical Review B","doi":"10.1103/physrevb.80.205303","title":"Measurement of the Knight field and local nuclear dipole-dipole field in an InGaAs/GaAs quantum dot ensemble","author":[{"first_name":"T.","full_name":"Auer, T.","last_name":"Auer"},{"last_name":"Oulton","full_name":"Oulton, R.","first_name":"R."},{"full_name":"Bauschulte, A.","last_name":"Bauschulte","first_name":"A."},{"first_name":"D. R.","full_name":"Yakovlev, D. R.","last_name":"Yakovlev"},{"first_name":"M.","last_name":"Bayer","full_name":"Bayer, M."},{"first_name":"S. Yu.","last_name":"Verbin","full_name":"Verbin, S. Yu."},{"first_name":"R. V.","full_name":"Cherbunin, R. V.","last_name":"Cherbunin"},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."}],"date_created":"2019-03-26T08:57:34Z","date_updated":"2022-01-06T07:03:57Z","citation":{"ieee":"T. Auer <i>et al.</i>, “Measurement of the Knight field and local nuclear dipole-dipole field in an InGaAs/GaAs quantum dot ensemble,” <i>Physical Review B</i>, 2009.","chicago":"Auer, T., R. Oulton, A. Bauschulte, D. R. Yakovlev, M. Bayer, S. Yu. Verbin, R. V. Cherbunin, Dirk Reuter, and A. D. Wieck. “Measurement of the Knight Field and Local Nuclear Dipole-Dipole Field in an InGaAs/GaAs Quantum Dot Ensemble.” <i>Physical Review B</i>, 2009. <a href=\"https://doi.org/10.1103/physrevb.80.205303\">https://doi.org/10.1103/physrevb.80.205303</a>.","ama":"Auer T, Oulton R, Bauschulte A, et al. Measurement of the Knight field and local nuclear dipole-dipole field in an InGaAs/GaAs quantum dot ensemble. <i>Physical Review B</i>. 2009. doi:<a href=\"https://doi.org/10.1103/physrevb.80.205303\">10.1103/physrevb.80.205303</a>","mla":"Auer, T., et al. “Measurement of the Knight Field and Local Nuclear Dipole-Dipole Field in an InGaAs/GaAs Quantum Dot Ensemble.” <i>Physical Review B</i>, 2009, doi:<a href=\"https://doi.org/10.1103/physrevb.80.205303\">10.1103/physrevb.80.205303</a>.","bibtex":"@article{Auer_Oulton_Bauschulte_Yakovlev_Bayer_Verbin_Cherbunin_Reuter_Wieck_2009, title={Measurement of the Knight field and local nuclear dipole-dipole field in an InGaAs/GaAs quantum dot ensemble}, DOI={<a href=\"https://doi.org/10.1103/physrevb.80.205303\">10.1103/physrevb.80.205303</a>}, journal={Physical Review B}, author={Auer, T. and Oulton, R. and Bauschulte, A. and Yakovlev, D. R. and Bayer, M. and Verbin, S. Yu. and Cherbunin, R. V. and Reuter, Dirk and Wieck, A. D.}, year={2009} }","short":"T. Auer, R. Oulton, A. Bauschulte, D.R. Yakovlev, M. Bayer, S.Y. Verbin, R.V. Cherbunin, D. Reuter, A.D. Wieck, Physical Review B (2009).","apa":"Auer, T., Oulton, R., Bauschulte, A., Yakovlev, D. R., Bayer, M., Verbin, S. Y., … Wieck, A. D. (2009). Measurement of the Knight field and local nuclear dipole-dipole field in an InGaAs/GaAs quantum dot ensemble. <i>Physical Review B</i>. <a href=\"https://doi.org/10.1103/physrevb.80.205303\">https://doi.org/10.1103/physrevb.80.205303</a>"},"year":"2009","publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]}},{"publication":"Journal of Physics: Conference Series","type":"journal_article","status":"public","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","_id":"8588","language":[{"iso":"eng"}],"article_number":"012043","publication_identifier":{"issn":["1742-6596"]},"publication_status":"published","citation":{"mla":"Fischer, S. F., et al. “Lateral Electron Tunnelling Spectroscopy in Etched GaAs/AlGaAs-Based Nanostructures.” <i>Journal of Physics: Conference Series</i>, 012043, 2009, doi:<a href=\"https://doi.org/10.1088/1742-6596/193/1/012043\">10.1088/1742-6596/193/1/012043</a>.","short":"S.F. Fischer, J.L. Deborde, U. Kunze, D. Reuter, A.D. Wieck, Journal of Physics: Conference Series (2009).","bibtex":"@article{Fischer_Deborde_Kunze_Reuter_Wieck_2009, title={Lateral electron tunnelling spectroscopy in etched GaAs/AlGaAs-based nanostructures}, DOI={<a href=\"https://doi.org/10.1088/1742-6596/193/1/012043\">10.1088/1742-6596/193/1/012043</a>}, number={012043}, journal={Journal of Physics: Conference Series}, author={Fischer, S F and Deborde, J L and Kunze, U and Reuter, Dirk and Wieck, A D}, year={2009} }","apa":"Fischer, S. F., Deborde, J. L., Kunze, U., Reuter, D., &#38; Wieck, A. D. (2009). Lateral electron tunnelling spectroscopy in etched GaAs/AlGaAs-based nanostructures. <i>Journal of Physics: Conference Series</i>. <a href=\"https://doi.org/10.1088/1742-6596/193/1/012043\">https://doi.org/10.1088/1742-6596/193/1/012043</a>","ama":"Fischer SF, Deborde JL, Kunze U, Reuter D, Wieck AD. Lateral electron tunnelling spectroscopy in etched GaAs/AlGaAs-based nanostructures. <i>Journal of Physics: Conference Series</i>. 2009. doi:<a href=\"https://doi.org/10.1088/1742-6596/193/1/012043\">10.1088/1742-6596/193/1/012043</a>","ieee":"S. F. Fischer, J. L. Deborde, U. Kunze, D. Reuter, and A. D. Wieck, “Lateral electron tunnelling spectroscopy in etched GaAs/AlGaAs-based nanostructures,” <i>Journal of Physics: Conference Series</i>, 2009.","chicago":"Fischer, S F, J L Deborde, U Kunze, Dirk Reuter, and A D Wieck. “Lateral Electron Tunnelling Spectroscopy in Etched GaAs/AlGaAs-Based Nanostructures.” <i>Journal of Physics: Conference Series</i>, 2009. <a href=\"https://doi.org/10.1088/1742-6596/193/1/012043\">https://doi.org/10.1088/1742-6596/193/1/012043</a>."},"year":"2009","author":[{"last_name":"Fischer","full_name":"Fischer, S F","first_name":"S F"},{"full_name":"Deborde, J L","last_name":"Deborde","first_name":"J L"},{"first_name":"U","full_name":"Kunze, U","last_name":"Kunze"},{"last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763","first_name":"Dirk"},{"first_name":"A D","full_name":"Wieck, A D","last_name":"Wieck"}],"date_created":"2019-03-26T08:58:33Z","date_updated":"2022-01-06T07:03:57Z","doi":"10.1088/1742-6596/193/1/012043","title":"Lateral electron tunnelling spectroscopy in etched GaAs/AlGaAs-based nanostructures"},{"year":"2009","citation":{"apa":"Fischer, S. F., Deborde, J. L., Kunze, U., Reuter, D., &#38; Wieck, A. D. (2009). Lateral electron tunnelling spectroscopy in etched GaAs/AlGaAs-based nanostructures. <i>Journal of Physics: Conference Series</i>. <a href=\"https://doi.org/10.1088/1742-6596/193/1/012043\">https://doi.org/10.1088/1742-6596/193/1/012043</a>","mla":"Fischer, S. F., et al. “Lateral Electron Tunnelling Spectroscopy in Etched GaAs/AlGaAs-Based Nanostructures.” <i>Journal of Physics: Conference Series</i>, 012043, 2009, doi:<a href=\"https://doi.org/10.1088/1742-6596/193/1/012043\">10.1088/1742-6596/193/1/012043</a>.","bibtex":"@article{Fischer_Deborde_Kunze_Reuter_Wieck_2009, title={Lateral electron tunnelling spectroscopy in etched GaAs/AlGaAs-based nanostructures}, DOI={<a href=\"https://doi.org/10.1088/1742-6596/193/1/012043\">10.1088/1742-6596/193/1/012043</a>}, number={012043}, journal={Journal of Physics: Conference Series}, author={Fischer, S F and Deborde, J L and Kunze, U and Reuter, Dirk and Wieck, A D}, year={2009} }","short":"S.F. Fischer, J.L. Deborde, U. Kunze, D. Reuter, A.D. Wieck, Journal of Physics: Conference Series (2009).","ama":"Fischer SF, Deborde JL, Kunze U, Reuter D, Wieck AD. Lateral electron tunnelling spectroscopy in etched GaAs/AlGaAs-based nanostructures. <i>Journal of Physics: Conference Series</i>. 2009. doi:<a href=\"https://doi.org/10.1088/1742-6596/193/1/012043\">10.1088/1742-6596/193/1/012043</a>","chicago":"Fischer, S F, J L Deborde, U Kunze, Dirk Reuter, and A D Wieck. “Lateral Electron Tunnelling Spectroscopy in Etched GaAs/AlGaAs-Based Nanostructures.” <i>Journal of Physics: Conference Series</i>, 2009. <a href=\"https://doi.org/10.1088/1742-6596/193/1/012043\">https://doi.org/10.1088/1742-6596/193/1/012043</a>.","ieee":"S. F. Fischer, J. L. Deborde, U. Kunze, D. Reuter, and A. D. Wieck, “Lateral electron tunnelling spectroscopy in etched GaAs/AlGaAs-based nanostructures,” <i>Journal of Physics: Conference Series</i>, 2009."},"publication_identifier":{"issn":["1742-6596"]},"publication_status":"published","title":"Lateral electron tunnelling spectroscopy in etched GaAs/AlGaAs-based nanostructures","doi":"10.1088/1742-6596/193/1/012043","date_updated":"2022-01-06T07:03:57Z","date_created":"2019-03-26T08:59:15Z","author":[{"full_name":"Fischer, S F","last_name":"Fischer","first_name":"S F"},{"full_name":"Deborde, J L","last_name":"Deborde","first_name":"J L"},{"first_name":"U","last_name":"Kunze","full_name":"Kunze, U"},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"full_name":"Wieck, A D","last_name":"Wieck","first_name":"A D"}],"status":"public","publication":"Journal of Physics: Conference Series","type":"journal_article","article_number":"012043","language":[{"iso":"eng"}],"_id":"8589","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514"},{"title":"Magnetic barrier in a two-dimensional hole gas","doi":"10.1016/j.spmi.2009.07.016","date_updated":"2022-01-06T07:03:57Z","date_created":"2019-03-26T09:02:20Z","author":[{"full_name":"Cerchez, M.","last_name":"Cerchez","first_name":"M."},{"first_name":"T.","full_name":"Heinzel, T.","last_name":"Heinzel"},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"first_name":"A.D.","full_name":"Wieck, A.D.","last_name":"Wieck"}],"year":"2009","page":"723-727","citation":{"ieee":"M. Cerchez, T. Heinzel, D. Reuter, and A. D. Wieck, “Magnetic barrier in a two-dimensional hole gas,” <i>Superlattices and Microstructures</i>, pp. 723–727, 2009.","chicago":"Cerchez, M., T. Heinzel, Dirk Reuter, and A.D. Wieck. “Magnetic Barrier in a Two-Dimensional Hole Gas.” <i>Superlattices and Microstructures</i>, 2009, 723–27. <a href=\"https://doi.org/10.1016/j.spmi.2009.07.016\">https://doi.org/10.1016/j.spmi.2009.07.016</a>.","ama":"Cerchez M, Heinzel T, Reuter D, Wieck AD. Magnetic barrier in a two-dimensional hole gas. <i>Superlattices and Microstructures</i>. 2009:723-727. doi:<a href=\"https://doi.org/10.1016/j.spmi.2009.07.016\">10.1016/j.spmi.2009.07.016</a>","bibtex":"@article{Cerchez_Heinzel_Reuter_Wieck_2009, title={Magnetic barrier in a two-dimensional hole gas}, DOI={<a href=\"https://doi.org/10.1016/j.spmi.2009.07.016\">10.1016/j.spmi.2009.07.016</a>}, journal={Superlattices and Microstructures}, author={Cerchez, M. and Heinzel, T. and Reuter, Dirk and Wieck, A.D.}, year={2009}, pages={723–727} }","short":"M. Cerchez, T. Heinzel, D. Reuter, A.D. Wieck, Superlattices and Microstructures (2009) 723–727.","mla":"Cerchez, M., et al. “Magnetic Barrier in a Two-Dimensional Hole Gas.” <i>Superlattices and Microstructures</i>, 2009, pp. 723–27, doi:<a href=\"https://doi.org/10.1016/j.spmi.2009.07.016\">10.1016/j.spmi.2009.07.016</a>.","apa":"Cerchez, M., Heinzel, T., Reuter, D., &#38; Wieck, A. D. (2009). Magnetic barrier in a two-dimensional hole gas. <i>Superlattices and Microstructures</i>, 723–727. <a href=\"https://doi.org/10.1016/j.spmi.2009.07.016\">https://doi.org/10.1016/j.spmi.2009.07.016</a>"},"publication_identifier":{"issn":["0749-6036"]},"publication_status":"published","language":[{"iso":"eng"}],"_id":"8591","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","status":"public","publication":"Superlattices and Microstructures","type":"journal_article"},{"department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","_id":"8592","language":[{"iso":"eng"}],"publication":"Physical Review B","type":"journal_article","status":"public","author":[{"full_name":"Kurtze, H.","last_name":"Kurtze","first_name":"H."},{"first_name":"J.","last_name":"Seebeck","full_name":"Seebeck, J."},{"first_name":"P.","full_name":"Gartner, P.","last_name":"Gartner"},{"first_name":"D. R.","full_name":"Yakovlev, D. R.","last_name":"Yakovlev"},{"full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter","first_name":"Dirk"},{"last_name":"Wieck","full_name":"Wieck, A. D.","first_name":"A. D."},{"first_name":"M.","last_name":"Bayer","full_name":"Bayer, M."},{"full_name":"Jahnke, F.","last_name":"Jahnke","first_name":"F."}],"date_created":"2019-03-26T09:04:15Z","date_updated":"2022-01-06T07:03:57Z","doi":"10.1103/physrevb.80.235319","title":"Carrier relaxation dynamics in self-assembled semiconductor quantum dots","publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","citation":{"chicago":"Kurtze, H., J. Seebeck, P. Gartner, D. R. Yakovlev, Dirk Reuter, A. D. Wieck, M. Bayer, and F. Jahnke. “Carrier Relaxation Dynamics in Self-Assembled Semiconductor Quantum Dots.” <i>Physical Review B</i>, 2009. <a href=\"https://doi.org/10.1103/physrevb.80.235319\">https://doi.org/10.1103/physrevb.80.235319</a>.","ieee":"H. Kurtze <i>et al.</i>, “Carrier relaxation dynamics in self-assembled semiconductor quantum dots,” <i>Physical Review B</i>, 2009.","ama":"Kurtze H, Seebeck J, Gartner P, et al. Carrier relaxation dynamics in self-assembled semiconductor quantum dots. <i>Physical Review B</i>. 2009. doi:<a href=\"https://doi.org/10.1103/physrevb.80.235319\">10.1103/physrevb.80.235319</a>","mla":"Kurtze, H., et al. “Carrier Relaxation Dynamics in Self-Assembled Semiconductor Quantum Dots.” <i>Physical Review B</i>, 2009, doi:<a href=\"https://doi.org/10.1103/physrevb.80.235319\">10.1103/physrevb.80.235319</a>.","bibtex":"@article{Kurtze_Seebeck_Gartner_Yakovlev_Reuter_Wieck_Bayer_Jahnke_2009, title={Carrier relaxation dynamics in self-assembled semiconductor quantum dots}, DOI={<a href=\"https://doi.org/10.1103/physrevb.80.235319\">10.1103/physrevb.80.235319</a>}, journal={Physical Review B}, author={Kurtze, H. and Seebeck, J. and Gartner, P. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Bayer, M. and Jahnke, F.}, year={2009} }","short":"H. Kurtze, J. Seebeck, P. Gartner, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, F. Jahnke, Physical Review B (2009).","apa":"Kurtze, H., Seebeck, J., Gartner, P., Yakovlev, D. R., Reuter, D., Wieck, A. D., … Jahnke, F. (2009). Carrier relaxation dynamics in self-assembled semiconductor quantum dots. <i>Physical Review B</i>. <a href=\"https://doi.org/10.1103/physrevb.80.235319\">https://doi.org/10.1103/physrevb.80.235319</a>"},"year":"2009"},{"status":"public","type":"journal_article","article_type":"original","article_number":"1181-DD10-02","user_id":"55706","department":[{"_id":"15"},{"_id":"286"}],"_id":"4152","citation":{"ama":"Fischer FJC, Weinl M, Lindner J, Stritzker B. Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks. <i>MRS Proceedings</i>. 2009;1181. doi:<a href=\"https://doi.org/10.1557/proc-1181-dd10-02\">10.1557/proc-1181-dd10-02</a>","chicago":"Fischer, Frederic J.C., Michael Weinl, Jörg Lindner, and Bernd Stritzker. “Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks.” <i>MRS Proceedings</i> 1181 (2009). <a href=\"https://doi.org/10.1557/proc-1181-dd10-02\">https://doi.org/10.1557/proc-1181-dd10-02</a>.","ieee":"F. J. C. Fischer, M. Weinl, J. Lindner, and B. Stritzker, “Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks,” <i>MRS Proceedings</i>, vol. 1181, 2009.","bibtex":"@article{Fischer_Weinl_Lindner_Stritzker_2009, title={Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks}, volume={1181}, DOI={<a href=\"https://doi.org/10.1557/proc-1181-dd10-02\">10.1557/proc-1181-dd10-02</a>}, number={1181-DD10-02}, journal={MRS Proceedings}, publisher={Cambridge University Press (CUP)}, author={Fischer, Frederic J.C. and Weinl, Michael and Lindner, Jörg and Stritzker, Bernd}, year={2009} }","mla":"Fischer, Frederic J. C., et al. “Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks.” <i>MRS Proceedings</i>, vol. 1181, 1181-DD10-02, Cambridge University Press (CUP), 2009, doi:<a href=\"https://doi.org/10.1557/proc-1181-dd10-02\">10.1557/proc-1181-dd10-02</a>.","short":"F.J.C. Fischer, M. Weinl, J. Lindner, B. Stritzker, MRS Proceedings 1181 (2009).","apa":"Fischer, F. J. C., Weinl, M., Lindner, J., &#38; Stritzker, B. (2009). Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks. <i>MRS Proceedings</i>, <i>1181</i>. <a href=\"https://doi.org/10.1557/proc-1181-dd10-02\">https://doi.org/10.1557/proc-1181-dd10-02</a>"},"intvolume":"      1181","publication_status":"published","publication_identifier":{"issn":["1946-4274"]},"conference":{"location":"San Franicsco (USA)","end_date":"2009-04-17","start_date":"2009-04-13","name":"MRS Spring Meeting 2009"},"doi":"10.1557/proc-1181-dd10-02","author":[{"full_name":"Fischer, Frederic J.C.","last_name":"Fischer","first_name":"Frederic J.C."},{"full_name":"Weinl, Michael","last_name":"Weinl","first_name":"Michael"},{"last_name":"Lindner","id":"20797","full_name":"Lindner, Jörg","first_name":"Jörg"},{"first_name":"Bernd","full_name":"Stritzker, Bernd","last_name":"Stritzker"}],"volume":1181,"date_updated":"2022-01-06T07:00:26Z","abstract":[{"text":"A novel technique to form periodically nanostructured Si surface morphologies based on nanosphere lithography (NSL) and He ion implantation induced swelling is studied in detail. It is shown that by implantation of keV He ions through the nanometric openings of NSL masks regular arrays of hillocks and rings can be created on silicon surfaces. The shape and size of these surface features can be easily controlled by adjusting the ion dose and energy as well as the mask size. Feature heights of more than 100 nm can be obtained, while feature distances are typically 1.15 or 2 (hillock or ring) nanosphere radii, which are chosen to be between 100 and 500 nm in this study. Atomic force and scanning electron microscopy measurements of the surface morphology are supplemented by cross-sectional transmission electron microscopy, revealing the inner structure of hillocks to consist of a central cavity surrounded by a hierarchical arrangement of smaller voids. The surface morphologies developed here have the potential to be useful for fixing and separating nano-objects on a silicon surface.","lang":"eng"}],"publication":"MRS Proceedings","language":[{"iso":"eng"}],"year":"2009","title":"Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks","date_created":"2018-08-27T13:21:44Z","publisher":"Cambridge University Press (CUP)"},{"issue":"4","year":"2009","publisher":"American Physical Society (APS)","date_created":"2018-08-28T09:32:32Z","title":"Indirect spin dephasing via charge-state decoherence in optical control schemes in quantum dots","publication":"Physical Review A","abstract":[{"text":"We demonstrate that an optically driven spin of a carrier in a quantum dot undergoes indirect dephasing via\r\nconditional optically induced charge evolution even in the absence of any direct interaction between the spin\r\nand its environment. A generic model for the indirect dephasing with a three-component system with spin,\r\ncharge, and reservoir is proposed. This indirect decoherence channel is studied for the optical spin manipulation\r\nin a quantum dot with a microscopic description of the charge-phonon interaction taking into account its\r\nnon-Markovian nature.","lang":"eng"}],"file":[{"access_level":"open_access","file_id":"4183","file_name":"2009 Grodecka,Machnikowski,Förstner_Indirect spin dephasing via charge-state decoherence in optical control schemes in quantum dots.pdf","file_size":192120,"date_created":"2018-08-28T09:33:22Z","creator":"hclaudia","date_updated":"2018-09-04T19:36:35Z","relation":"main_file","content_type":"application/pdf"}],"keyword":["tet_topic_qd"],"ddc":["530"],"language":[{"iso":"eng"}],"publication_identifier":{"issn":["1050-2947","1094-1622"]},"has_accepted_license":"1","publication_status":"published","intvolume":"        79","citation":{"short":"A. Grodecka, P. Machnikowski, J. Förstner, Physical Review A 79 (2009).","mla":"Grodecka, A., et al. “Indirect Spin Dephasing via Charge-State Decoherence in Optical Control Schemes in Quantum Dots.” <i>Physical Review A</i>, vol. 79, no. 4, 042331, American Physical Society (APS), 2009, doi:<a href=\"https://doi.org/10.1103/physreva.79.042331\">10.1103/physreva.79.042331</a>.","bibtex":"@article{Grodecka_Machnikowski_Förstner_2009, title={Indirect spin dephasing via charge-state decoherence in optical control schemes in quantum dots}, volume={79}, DOI={<a href=\"https://doi.org/10.1103/physreva.79.042331\">10.1103/physreva.79.042331</a>}, number={4042331}, journal={Physical Review A}, publisher={American Physical Society (APS)}, author={Grodecka, A. and Machnikowski, P. and Förstner, Jens}, year={2009} }","apa":"Grodecka, A., Machnikowski, P., &#38; Förstner, J. (2009). Indirect spin dephasing via charge-state decoherence in optical control schemes in quantum dots. <i>Physical Review A</i>, <i>79</i>(4). <a href=\"https://doi.org/10.1103/physreva.79.042331\">https://doi.org/10.1103/physreva.79.042331</a>","chicago":"Grodecka, A., P. Machnikowski, and Jens Förstner. “Indirect Spin Dephasing via Charge-State Decoherence in Optical Control Schemes in Quantum Dots.” <i>Physical Review A</i> 79, no. 4 (2009). <a href=\"https://doi.org/10.1103/physreva.79.042331\">https://doi.org/10.1103/physreva.79.042331</a>.","ieee":"A. Grodecka, P. Machnikowski, and J. Förstner, “Indirect spin dephasing via charge-state decoherence in optical control schemes in quantum dots,” <i>Physical Review A</i>, vol. 79, no. 4, 2009.","ama":"Grodecka A, Machnikowski P, Förstner J. Indirect spin dephasing via charge-state decoherence in optical control schemes in quantum dots. <i>Physical Review A</i>. 2009;79(4). doi:<a href=\"https://doi.org/10.1103/physreva.79.042331\">10.1103/physreva.79.042331</a>"},"date_updated":"2022-01-06T07:00:31Z","oa":"1","volume":79,"author":[{"full_name":"Grodecka, A.","last_name":"Grodecka","first_name":"A."},{"last_name":"Machnikowski","full_name":"Machnikowski, P.","first_name":"P."},{"orcid":"0000-0001-7059-9862","last_name":"Förstner","full_name":"Förstner, Jens","id":"158","first_name":"Jens"}],"doi":"10.1103/physreva.79.042331","type":"journal_article","urn":"41826","status":"public","_id":"4182","department":[{"_id":"15"}],"user_id":"158","article_number":"042331","article_type":"original","file_date_updated":"2018-09-04T19:36:35Z"},{"publication":"Journal of Crystal Growth","abstract":[{"lang":"eng","text":"Buried ion beam synthesized 3C-SiC layers were revealed to the surface of silicon wafers to provide lattice matched substrates for GaN thin film epitaxy. Both epitaxial SiC/Si(1 1 1) and SiC/Si(0 0 1) growth surfaces with either six- or four-fold crystal symmetry, respectively, were formed. GaN thin film growth was achieved by ion beam assisted molecular beam epitaxy (IBA–MBE) which – owing to the energy and momentum transfer of the ions – allows to deposit epitaxial thin films at particularly low growth temperatures where both the stable hexagonal and the metastable cubic polytype of GaN can be formed. It is shown by X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM) that using appropriate fluxes of Ga atoms both purely hexagonal and purely cubic GaN films can\r\nbe grown epitaxially on SiC/Si(1 1 1) and SiC/Si(0 0 1), respectively. Thereby Ga rich growth conditions seem to stabilize the formation of the cubic polytype. It is obvious from XTEM studies that the high density of crystal defects in the SiC layer is not transferred onto the growing GaN films and that the crystalline quality of GaN films improves with increasing film thickness. The influence of surface roughness and wettability, interfacial cavities and the nucleation of twin-type defects at the GaN/SiC interface on the crystalline quality of the GaN thin films is discussed."}],"file":[{"file_name":"Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown by IBA-MBE on SiC-Si.pdf","access_level":"closed","file_id":"4193","file_size":828431,"date_created":"2018-08-28T11:50:45Z","creator":"hclaudia","date_updated":"2018-08-28T11:50:45Z","relation":"main_file","success":1,"content_type":"application/pdf"}],"ddc":["530"],"language":[{"iso":"eng"}],"issue":"6","year":"2009","publisher":"Elsevier BV","date_created":"2018-08-28T11:50:05Z","title":"Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si","type":"journal_article","status":"public","_id":"4192","department":[{"_id":"15"}],"user_id":"55706","article_type":"original","file_date_updated":"2018-08-28T11:50:45Z","has_accepted_license":"1","publication_identifier":{"issn":["0022-0248"]},"publication_status":"published","page":"762-769","intvolume":"       312","citation":{"ama":"Häberlen M, Gerlach JW, Murphy B, Lindner J, Stritzker B. Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si. <i>Journal of Crystal Growth</i>. 2009;312(6):762-769. doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2009.12.048\">10.1016/j.jcrysgro.2009.12.048</a>","ieee":"M. Häberlen, J. W. Gerlach, B. Murphy, J. Lindner, and B. Stritzker, “Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si,” <i>Journal of Crystal Growth</i>, vol. 312, no. 6, pp. 762–769, 2009.","chicago":"Häberlen, M., J.W. Gerlach, B. Murphy, Jörg Lindner, and B. Stritzker. “Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown by IBA–MBE on SiC/Si.” <i>Journal of Crystal Growth</i> 312, no. 6 (2009): 762–69. <a href=\"https://doi.org/10.1016/j.jcrysgro.2009.12.048\">https://doi.org/10.1016/j.jcrysgro.2009.12.048</a>.","apa":"Häberlen, M., Gerlach, J. W., Murphy, B., Lindner, J., &#38; Stritzker, B. (2009). Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si. <i>Journal of Crystal Growth</i>, <i>312</i>(6), 762–769. <a href=\"https://doi.org/10.1016/j.jcrysgro.2009.12.048\">https://doi.org/10.1016/j.jcrysgro.2009.12.048</a>","bibtex":"@article{Häberlen_Gerlach_Murphy_Lindner_Stritzker_2009, title={Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si}, volume={312}, DOI={<a href=\"https://doi.org/10.1016/j.jcrysgro.2009.12.048\">10.1016/j.jcrysgro.2009.12.048</a>}, number={6}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Häberlen, M. and Gerlach, J.W. and Murphy, B. and Lindner, Jörg and Stritzker, B.}, year={2009}, pages={762–769} }","short":"M. Häberlen, J.W. Gerlach, B. Murphy, J. Lindner, B. Stritzker, Journal of Crystal Growth 312 (2009) 762–769.","mla":"Häberlen, M., et al. “Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown by IBA–MBE on SiC/Si.” <i>Journal of Crystal Growth</i>, vol. 312, no. 6, Elsevier BV, 2009, pp. 762–69, doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2009.12.048\">10.1016/j.jcrysgro.2009.12.048</a>."},"date_updated":"2022-01-06T07:00:32Z","volume":312,"author":[{"first_name":"M.","last_name":"Häberlen","full_name":"Häberlen, M."},{"last_name":"Gerlach","full_name":"Gerlach, J.W.","first_name":"J.W."},{"full_name":"Murphy, B.","last_name":"Murphy","first_name":"B."},{"first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg","id":"20797"},{"full_name":"Stritzker, B.","last_name":"Stritzker","first_name":"B."}],"doi":"10.1016/j.jcrysgro.2009.12.048"},{"file":[{"file_id":"4197","file_name":"Nonpolar cubic AlGaN-GaN HFETs grown by MBE on Ar+ implanted 3C SiC (001).pdf","access_level":"closed","file_size":213837,"date_created":"2018-08-28T12:16:11Z","creator":"hclaudia","date_updated":"2018-08-28T12:16:11Z","relation":"main_file","success":1,"content_type":"application/pdf"}],"abstract":[{"text":"The growth of cubic group III-nitrides is a direct way to eliminate polarization effects, which inherently limit the fabrication of normally-off heterojunction field-effect transistors (HFETs) in GaN technology. HFET structures were fabricated of non-polar cubic AlGaN/GaN hetero layers grown by plasma assisted molecular beam epitaxy (MBE) on free standing 3C-SiC (001). The electrical insulation of 3C-SiC was realised by Ar+ implantation before c-AlGaN/GaN MBE. The structural properties of the epilayers were studied by highresolution x-ray diffraction (HRXRD). HFETs with normally off and normally-on characteristics were fabricated of cubic AlGaN/GaN. Capacitance-voltage (CV) characteristics of thegate contact were performed to detect the electron channel at the c-AlGaN/GaN hetero interface.","lang":"eng"}],"publication":"physica status solidi (c)","language":[{"iso":"eng"}],"ddc":["530"],"year":"2009","issue":"1","title":"Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001)","date_created":"2018-08-28T12:15:20Z","publisher":"Wiley","status":"public","type":"journal_article","file_date_updated":"2018-08-28T12:16:11Z","article_type":"original","user_id":"55706","department":[{"_id":"15"},{"_id":"286"}],"_id":"4196","citation":{"bibtex":"@article{Tschumak_Lindner_Bürger_Lischka_Nagasawa_Abe_As_2009, title={Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001)}, volume={7}, DOI={<a href=\"https://doi.org/10.1002/pssc.200982615\">10.1002/pssc.200982615</a>}, number={1}, journal={physica status solidi (c)}, publisher={Wiley}, author={Tschumak, Elena and Lindner, Jörg and Bürger, M. and Lischka, K. and Nagasawa, H. and Abe, M. and As, Donald}, year={2009}, pages={104–107} }","short":"E. Tschumak, J. Lindner, M. Bürger, K. Lischka, H. Nagasawa, M. Abe, D. As, Physica Status Solidi (C) 7 (2009) 104–107.","mla":"Tschumak, Elena, et al. “Non-Polar Cubic AlGaN/GaN HFETs Grown by MBE on Ar+implanted 3C-SiC (001).” <i>Physica Status Solidi (C)</i>, vol. 7, no. 1, Wiley, 2009, pp. 104–07, doi:<a href=\"https://doi.org/10.1002/pssc.200982615\">10.1002/pssc.200982615</a>.","apa":"Tschumak, E., Lindner, J., Bürger, M., Lischka, K., Nagasawa, H., Abe, M., &#38; As, D. (2009). Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001). <i>Physica Status Solidi (C)</i>, <i>7</i>(1), 104–107. <a href=\"https://doi.org/10.1002/pssc.200982615\">https://doi.org/10.1002/pssc.200982615</a>","chicago":"Tschumak, Elena, Jörg Lindner, M. Bürger, K. Lischka, H. Nagasawa, M. Abe, and Donald As. “Non-Polar Cubic AlGaN/GaN HFETs Grown by MBE on Ar+implanted 3C-SiC (001).” <i>Physica Status Solidi (C)</i> 7, no. 1 (2009): 104–7. <a href=\"https://doi.org/10.1002/pssc.200982615\">https://doi.org/10.1002/pssc.200982615</a>.","ieee":"E. Tschumak <i>et al.</i>, “Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001),” <i>physica status solidi (c)</i>, vol. 7, no. 1, pp. 104–107, 2009.","ama":"Tschumak E, Lindner J, Bürger M, et al. Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001). <i>physica status solidi (c)</i>. 2009;7(1):104-107. doi:<a href=\"https://doi.org/10.1002/pssc.200982615\">10.1002/pssc.200982615</a>"},"page":"104-107","intvolume":"         7","publication_status":"published","has_accepted_license":"1","publication_identifier":{"issn":["1862-6351","1610-1642"]},"doi":"10.1002/pssc.200982615","author":[{"last_name":"Tschumak","full_name":"Tschumak, Elena","first_name":"Elena"},{"first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg","id":"20797"},{"first_name":"M.","last_name":"Bürger","full_name":"Bürger, M."},{"first_name":"K.","full_name":"Lischka, K.","last_name":"Lischka"},{"first_name":"H.","full_name":"Nagasawa, H.","last_name":"Nagasawa"},{"full_name":"Abe, M.","last_name":"Abe","first_name":"M."},{"full_name":"As, Donald","last_name":"As","first_name":"Donald"}],"volume":7,"date_updated":"2022-01-06T07:00:33Z"}]