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Wieck, “Lateral electron tunnelling spectroscopy in etched GaAs/AlGaAs-based nanostructures,” <i>Journal of Physics: Conference Series</i>, 2009.","chicago":"Fischer, S F, J L Deborde, U Kunze, Dirk Reuter, and A D Wieck. “Lateral Electron Tunnelling Spectroscopy in Etched GaAs/AlGaAs-Based Nanostructures.” <i>Journal of Physics: Conference Series</i>, 2009. <a href=\"https://doi.org/10.1088/1742-6596/193/1/012043\">https://doi.org/10.1088/1742-6596/193/1/012043</a>."},"publication_status":"published","publication_identifier":{"issn":["1742-6596"]},"article_number":"012043","language":[{"iso":"eng"}],"_id":"8588","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"status":"public","type":"journal_article","publication":"Journal of Physics: Conference Series"},{"author":[{"first_name":"S F","full_name":"Fischer, S F","last_name":"Fischer"},{"full_name":"Deborde, J L","last_name":"Deborde","first_name":"J L"},{"full_name":"Kunze, U","last_name":"Kunze","first_name":"U"},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"full_name":"Wieck, A D","last_name":"Wieck","first_name":"A D"}],"date_created":"2019-03-26T08:59:15Z","date_updated":"2022-01-06T07:03:57Z","doi":"10.1088/1742-6596/193/1/012043","title":"Lateral electron tunnelling spectroscopy in etched GaAs/AlGaAs-based nanostructures","publication_status":"published","publication_identifier":{"issn":["1742-6596"]},"citation":{"apa":"Fischer, S. F., Deborde, J. L., Kunze, U., Reuter, D., &#38; Wieck, A. D. (2009). Lateral electron tunnelling spectroscopy in etched GaAs/AlGaAs-based nanostructures. <i>Journal of Physics: Conference Series</i>. <a href=\"https://doi.org/10.1088/1742-6596/193/1/012043\">https://doi.org/10.1088/1742-6596/193/1/012043</a>","short":"S.F. Fischer, J.L. Deborde, U. Kunze, D. Reuter, A.D. Wieck, Journal of Physics: Conference Series (2009).","mla":"Fischer, S. F., et al. “Lateral Electron Tunnelling Spectroscopy in Etched GaAs/AlGaAs-Based Nanostructures.” <i>Journal of Physics: Conference Series</i>, 012043, 2009, doi:<a href=\"https://doi.org/10.1088/1742-6596/193/1/012043\">10.1088/1742-6596/193/1/012043</a>.","bibtex":"@article{Fischer_Deborde_Kunze_Reuter_Wieck_2009, title={Lateral electron tunnelling spectroscopy in etched GaAs/AlGaAs-based nanostructures}, DOI={<a href=\"https://doi.org/10.1088/1742-6596/193/1/012043\">10.1088/1742-6596/193/1/012043</a>}, number={012043}, journal={Journal of Physics: Conference Series}, author={Fischer, S F and Deborde, J L and Kunze, U and Reuter, Dirk and Wieck, A D}, year={2009} }","ieee":"S. F. Fischer, J. L. Deborde, U. Kunze, D. Reuter, and A. D. Wieck, “Lateral electron tunnelling spectroscopy in etched GaAs/AlGaAs-based nanostructures,” <i>Journal of Physics: Conference Series</i>, 2009.","chicago":"Fischer, S F, J L Deborde, U Kunze, Dirk Reuter, and A D Wieck. “Lateral Electron Tunnelling Spectroscopy in Etched GaAs/AlGaAs-Based Nanostructures.” <i>Journal of Physics: Conference Series</i>, 2009. <a href=\"https://doi.org/10.1088/1742-6596/193/1/012043\">https://doi.org/10.1088/1742-6596/193/1/012043</a>.","ama":"Fischer SF, Deborde JL, Kunze U, Reuter D, Wieck AD. Lateral electron tunnelling spectroscopy in etched GaAs/AlGaAs-based nanostructures. <i>Journal of Physics: Conference Series</i>. 2009. doi:<a href=\"https://doi.org/10.1088/1742-6596/193/1/012043\">10.1088/1742-6596/193/1/012043</a>"},"year":"2009","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"8589","language":[{"iso":"eng"}],"article_number":"012043","type":"journal_article","publication":"Journal of Physics: Conference Series","status":"public"},{"status":"public","type":"journal_article","publication":"Superlattices and Microstructures","language":[{"iso":"eng"}],"user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"8591","citation":{"bibtex":"@article{Cerchez_Heinzel_Reuter_Wieck_2009, title={Magnetic barrier in a two-dimensional hole gas}, DOI={<a href=\"https://doi.org/10.1016/j.spmi.2009.07.016\">10.1016/j.spmi.2009.07.016</a>}, journal={Superlattices and Microstructures}, author={Cerchez, M. and Heinzel, T. and Reuter, Dirk and Wieck, A.D.}, year={2009}, pages={723–727} }","short":"M. Cerchez, T. Heinzel, D. Reuter, A.D. Wieck, Superlattices and Microstructures (2009) 723–727.","mla":"Cerchez, M., et al. “Magnetic Barrier in a Two-Dimensional Hole Gas.” <i>Superlattices and Microstructures</i>, 2009, pp. 723–27, doi:<a href=\"https://doi.org/10.1016/j.spmi.2009.07.016\">10.1016/j.spmi.2009.07.016</a>.","apa":"Cerchez, M., Heinzel, T., Reuter, D., &#38; Wieck, A. D. (2009). Magnetic barrier in a two-dimensional hole gas. <i>Superlattices and Microstructures</i>, 723–727. <a href=\"https://doi.org/10.1016/j.spmi.2009.07.016\">https://doi.org/10.1016/j.spmi.2009.07.016</a>","ama":"Cerchez M, Heinzel T, Reuter D, Wieck AD. Magnetic barrier in a two-dimensional hole gas. <i>Superlattices and Microstructures</i>. 2009:723-727. doi:<a href=\"https://doi.org/10.1016/j.spmi.2009.07.016\">10.1016/j.spmi.2009.07.016</a>","ieee":"M. Cerchez, T. Heinzel, D. Reuter, and A. D. Wieck, “Magnetic barrier in a two-dimensional hole gas,” <i>Superlattices and Microstructures</i>, pp. 723–727, 2009.","chicago":"Cerchez, M., T. Heinzel, Dirk Reuter, and A.D. Wieck. “Magnetic Barrier in a Two-Dimensional Hole Gas.” <i>Superlattices and Microstructures</i>, 2009, 723–27. <a href=\"https://doi.org/10.1016/j.spmi.2009.07.016\">https://doi.org/10.1016/j.spmi.2009.07.016</a>."},"page":"723-727","year":"2009","publication_status":"published","publication_identifier":{"issn":["0749-6036"]},"doi":"10.1016/j.spmi.2009.07.016","title":"Magnetic barrier in a two-dimensional hole gas","author":[{"last_name":"Cerchez","full_name":"Cerchez, M.","first_name":"M."},{"full_name":"Heinzel, T.","last_name":"Heinzel","first_name":"T."},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"full_name":"Wieck, A.D.","last_name":"Wieck","first_name":"A.D."}],"date_created":"2019-03-26T09:02:20Z","date_updated":"2022-01-06T07:03:57Z"},{"title":"Carrier relaxation dynamics in self-assembled semiconductor quantum dots","doi":"10.1103/physrevb.80.235319","date_updated":"2022-01-06T07:03:57Z","author":[{"first_name":"H.","last_name":"Kurtze","full_name":"Kurtze, H."},{"last_name":"Seebeck","full_name":"Seebeck, J.","first_name":"J."},{"first_name":"P.","last_name":"Gartner","full_name":"Gartner, P."},{"first_name":"D. R.","last_name":"Yakovlev","full_name":"Yakovlev, D. R."},{"last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763","first_name":"Dirk"},{"last_name":"Wieck","full_name":"Wieck, A. D.","first_name":"A. D."},{"full_name":"Bayer, M.","last_name":"Bayer","first_name":"M."},{"full_name":"Jahnke, F.","last_name":"Jahnke","first_name":"F."}],"date_created":"2019-03-26T09:04:15Z","year":"2009","citation":{"chicago":"Kurtze, H., J. Seebeck, P. Gartner, D. R. Yakovlev, Dirk Reuter, A. D. Wieck, M. Bayer, and F. Jahnke. “Carrier Relaxation Dynamics in Self-Assembled Semiconductor Quantum Dots.” <i>Physical Review B</i>, 2009. <a href=\"https://doi.org/10.1103/physrevb.80.235319\">https://doi.org/10.1103/physrevb.80.235319</a>.","ieee":"H. Kurtze <i>et al.</i>, “Carrier relaxation dynamics in self-assembled semiconductor quantum dots,” <i>Physical Review B</i>, 2009.","ama":"Kurtze H, Seebeck J, Gartner P, et al. Carrier relaxation dynamics in self-assembled semiconductor quantum dots. <i>Physical Review B</i>. 2009. doi:<a href=\"https://doi.org/10.1103/physrevb.80.235319\">10.1103/physrevb.80.235319</a>","bibtex":"@article{Kurtze_Seebeck_Gartner_Yakovlev_Reuter_Wieck_Bayer_Jahnke_2009, title={Carrier relaxation dynamics in self-assembled semiconductor quantum dots}, DOI={<a href=\"https://doi.org/10.1103/physrevb.80.235319\">10.1103/physrevb.80.235319</a>}, journal={Physical Review B}, author={Kurtze, H. and Seebeck, J. and Gartner, P. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Bayer, M. and Jahnke, F.}, year={2009} }","mla":"Kurtze, H., et al. “Carrier Relaxation Dynamics in Self-Assembled Semiconductor Quantum Dots.” <i>Physical Review B</i>, 2009, doi:<a href=\"https://doi.org/10.1103/physrevb.80.235319\">10.1103/physrevb.80.235319</a>.","short":"H. Kurtze, J. Seebeck, P. Gartner, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, F. Jahnke, Physical Review B (2009).","apa":"Kurtze, H., Seebeck, J., Gartner, P., Yakovlev, D. R., Reuter, D., Wieck, A. D., … Jahnke, F. (2009). Carrier relaxation dynamics in self-assembled semiconductor quantum dots. <i>Physical Review B</i>. <a href=\"https://doi.org/10.1103/physrevb.80.235319\">https://doi.org/10.1103/physrevb.80.235319</a>"},"publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","language":[{"iso":"eng"}],"_id":"8592","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","status":"public","publication":"Physical Review B","type":"journal_article"},{"year":"2009","publisher":"Cambridge University Press (CUP)","date_created":"2018-08-27T13:21:44Z","title":"Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks","publication":"MRS Proceedings","abstract":[{"text":"A novel technique to form periodically nanostructured Si surface morphologies based on nanosphere lithography (NSL) and He ion implantation induced swelling is studied in detail. It is shown that by implantation of keV He ions through the nanometric openings of NSL masks regular arrays of hillocks and rings can be created on silicon surfaces. The shape and size of these surface features can be easily controlled by adjusting the ion dose and energy as well as the mask size. Feature heights of more than 100 nm can be obtained, while feature distances are typically 1.15 or 2 (hillock or ring) nanosphere radii, which are chosen to be between 100 and 500 nm in this study. Atomic force and scanning electron microscopy measurements of the surface morphology are supplemented by cross-sectional transmission electron microscopy, revealing the inner structure of hillocks to consist of a central cavity surrounded by a hierarchical arrangement of smaller voids. The surface morphologies developed here have the potential to be useful for fixing and separating nano-objects on a silicon surface.","lang":"eng"}],"language":[{"iso":"eng"}],"publication_status":"published","publication_identifier":{"issn":["1946-4274"]},"citation":{"mla":"Fischer, Frederic J. C., et al. “Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks.” <i>MRS Proceedings</i>, vol. 1181, 1181-DD10-02, Cambridge University Press (CUP), 2009, doi:<a href=\"https://doi.org/10.1557/proc-1181-dd10-02\">10.1557/proc-1181-dd10-02</a>.","short":"F.J.C. Fischer, M. Weinl, J. Lindner, B. Stritzker, MRS Proceedings 1181 (2009).","bibtex":"@article{Fischer_Weinl_Lindner_Stritzker_2009, title={Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks}, volume={1181}, DOI={<a href=\"https://doi.org/10.1557/proc-1181-dd10-02\">10.1557/proc-1181-dd10-02</a>}, number={1181-DD10-02}, journal={MRS Proceedings}, publisher={Cambridge University Press (CUP)}, author={Fischer, Frederic J.C. and Weinl, Michael and Lindner, Jörg and Stritzker, Bernd}, year={2009} }","apa":"Fischer, F. J. C., Weinl, M., Lindner, J., &#38; Stritzker, B. (2009). Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks. <i>MRS Proceedings</i>, <i>1181</i>. <a href=\"https://doi.org/10.1557/proc-1181-dd10-02\">https://doi.org/10.1557/proc-1181-dd10-02</a>","ama":"Fischer FJC, Weinl M, Lindner J, Stritzker B. Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks. <i>MRS Proceedings</i>. 2009;1181. doi:<a href=\"https://doi.org/10.1557/proc-1181-dd10-02\">10.1557/proc-1181-dd10-02</a>","chicago":"Fischer, Frederic J.C., Michael Weinl, Jörg Lindner, and Bernd Stritzker. “Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks.” <i>MRS Proceedings</i> 1181 (2009). <a href=\"https://doi.org/10.1557/proc-1181-dd10-02\">https://doi.org/10.1557/proc-1181-dd10-02</a>.","ieee":"F. J. C. Fischer, M. Weinl, J. Lindner, and B. Stritzker, “Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks,” <i>MRS Proceedings</i>, vol. 1181, 2009."},"intvolume":"      1181","date_updated":"2022-01-06T07:00:26Z","author":[{"full_name":"Fischer, Frederic J.C.","last_name":"Fischer","first_name":"Frederic J.C."},{"first_name":"Michael","last_name":"Weinl","full_name":"Weinl, Michael"},{"id":"20797","full_name":"Lindner, Jörg","last_name":"Lindner","first_name":"Jörg"},{"last_name":"Stritzker","full_name":"Stritzker, Bernd","first_name":"Bernd"}],"volume":1181,"doi":"10.1557/proc-1181-dd10-02","conference":{"end_date":"2009-04-17","location":"San Franicsco (USA)","name":"MRS Spring Meeting 2009","start_date":"2009-04-13"},"type":"journal_article","status":"public","_id":"4152","user_id":"55706","department":[{"_id":"15"},{"_id":"286"}],"article_type":"original","article_number":"1181-DD10-02"},{"abstract":[{"lang":"eng","text":"We demonstrate that an optically driven spin of a carrier in a quantum dot undergoes indirect dephasing via\r\nconditional optically induced charge evolution even in the absence of any direct interaction between the spin\r\nand its environment. A generic model for the indirect dephasing with a three-component system with spin,\r\ncharge, and reservoir is proposed. This indirect decoherence channel is studied for the optical spin manipulation\r\nin a quantum dot with a microscopic description of the charge-phonon interaction taking into account its\r\nnon-Markovian nature."}],"file":[{"relation":"main_file","content_type":"application/pdf","file_name":"2009 Grodecka,Machnikowski,Förstner_Indirect spin dephasing via charge-state decoherence in optical control schemes in quantum dots.pdf","access_level":"open_access","file_id":"4183","file_size":192120,"date_created":"2018-08-28T09:33:22Z","creator":"hclaudia","date_updated":"2018-09-04T19:36:35Z"}],"publication":"Physical Review A","ddc":["530"],"keyword":["tet_topic_qd"],"language":[{"iso":"eng"}],"year":"2009","issue":"4","title":"Indirect spin dephasing via charge-state decoherence in optical control schemes in quantum dots","publisher":"American Physical Society (APS)","date_created":"2018-08-28T09:32:32Z","urn":"41826","status":"public","type":"journal_article","article_number":"042331","article_type":"original","file_date_updated":"2018-09-04T19:36:35Z","_id":"4182","user_id":"158","department":[{"_id":"15"}],"citation":{"ama":"Grodecka A, Machnikowski P, Förstner J. Indirect spin dephasing via charge-state decoherence in optical control schemes in quantum dots. <i>Physical Review A</i>. 2009;79(4). doi:<a href=\"https://doi.org/10.1103/physreva.79.042331\">10.1103/physreva.79.042331</a>","ieee":"A. Grodecka, P. Machnikowski, and J. Förstner, “Indirect spin dephasing via charge-state decoherence in optical control schemes in quantum dots,” <i>Physical Review A</i>, vol. 79, no. 4, 2009.","chicago":"Grodecka, A., P. Machnikowski, and Jens Förstner. “Indirect Spin Dephasing via Charge-State Decoherence in Optical Control Schemes in Quantum Dots.” <i>Physical Review A</i> 79, no. 4 (2009). <a href=\"https://doi.org/10.1103/physreva.79.042331\">https://doi.org/10.1103/physreva.79.042331</a>.","apa":"Grodecka, A., Machnikowski, P., &#38; Förstner, J. (2009). Indirect spin dephasing via charge-state decoherence in optical control schemes in quantum dots. <i>Physical Review A</i>, <i>79</i>(4). <a href=\"https://doi.org/10.1103/physreva.79.042331\">https://doi.org/10.1103/physreva.79.042331</a>","bibtex":"@article{Grodecka_Machnikowski_Förstner_2009, title={Indirect spin dephasing via charge-state decoherence in optical control schemes in quantum dots}, volume={79}, DOI={<a href=\"https://doi.org/10.1103/physreva.79.042331\">10.1103/physreva.79.042331</a>}, number={4042331}, journal={Physical Review A}, publisher={American Physical Society (APS)}, author={Grodecka, A. and Machnikowski, P. and Förstner, Jens}, year={2009} }","short":"A. Grodecka, P. Machnikowski, J. Förstner, Physical Review A 79 (2009).","mla":"Grodecka, A., et al. “Indirect Spin Dephasing via Charge-State Decoherence in Optical Control Schemes in Quantum Dots.” <i>Physical Review A</i>, vol. 79, no. 4, 042331, American Physical Society (APS), 2009, doi:<a href=\"https://doi.org/10.1103/physreva.79.042331\">10.1103/physreva.79.042331</a>."},"intvolume":"        79","publication_status":"published","publication_identifier":{"issn":["1050-2947","1094-1622"]},"has_accepted_license":"1","doi":"10.1103/physreva.79.042331","oa":"1","date_updated":"2022-01-06T07:00:31Z","author":[{"last_name":"Grodecka","full_name":"Grodecka, A.","first_name":"A."},{"first_name":"P.","last_name":"Machnikowski","full_name":"Machnikowski, P."},{"last_name":"Förstner","orcid":"0000-0001-7059-9862","id":"158","full_name":"Förstner, Jens","first_name":"Jens"}],"volume":79},{"language":[{"iso":"eng"}],"ddc":["530"],"file":[{"relation":"main_file","success":1,"content_type":"application/pdf","file_name":"Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown by IBA-MBE on SiC-Si.pdf","access_level":"closed","file_id":"4193","file_size":828431,"creator":"hclaudia","date_created":"2018-08-28T11:50:45Z","date_updated":"2018-08-28T11:50:45Z"}],"abstract":[{"lang":"eng","text":"Buried ion beam synthesized 3C-SiC layers were revealed to the surface of silicon wafers to provide lattice matched substrates for GaN thin film epitaxy. Both epitaxial SiC/Si(1 1 1) and SiC/Si(0 0 1) growth surfaces with either six- or four-fold crystal symmetry, respectively, were formed. GaN thin film growth was achieved by ion beam assisted molecular beam epitaxy (IBA–MBE) which – owing to the energy and momentum transfer of the ions – allows to deposit epitaxial thin films at particularly low growth temperatures where both the stable hexagonal and the metastable cubic polytype of GaN can be formed. It is shown by X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM) that using appropriate fluxes of Ga atoms both purely hexagonal and purely cubic GaN films can\r\nbe grown epitaxially on SiC/Si(1 1 1) and SiC/Si(0 0 1), respectively. Thereby Ga rich growth conditions seem to stabilize the formation of the cubic polytype. It is obvious from XTEM studies that the high density of crystal defects in the SiC layer is not transferred onto the growing GaN films and that the crystalline quality of GaN films improves with increasing film thickness. The influence of surface roughness and wettability, interfacial cavities and the nucleation of twin-type defects at the GaN/SiC interface on the crystalline quality of the GaN thin films is discussed."}],"publication":"Journal of Crystal Growth","title":"Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si","date_created":"2018-08-28T11:50:05Z","publisher":"Elsevier BV","year":"2009","issue":"6","file_date_updated":"2018-08-28T11:50:45Z","article_type":"original","department":[{"_id":"15"}],"user_id":"55706","_id":"4192","status":"public","type":"journal_article","doi":"10.1016/j.jcrysgro.2009.12.048","volume":312,"author":[{"full_name":"Häberlen, M.","last_name":"Häberlen","first_name":"M."},{"first_name":"J.W.","full_name":"Gerlach, J.W.","last_name":"Gerlach"},{"full_name":"Murphy, B.","last_name":"Murphy","first_name":"B."},{"id":"20797","full_name":"Lindner, Jörg","last_name":"Lindner","first_name":"Jörg"},{"first_name":"B.","last_name":"Stritzker","full_name":"Stritzker, B."}],"date_updated":"2022-01-06T07:00:32Z","page":"762-769","intvolume":"       312","citation":{"ama":"Häberlen M, Gerlach JW, Murphy B, Lindner J, Stritzker B. Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si. <i>Journal of Crystal Growth</i>. 2009;312(6):762-769. doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2009.12.048\">10.1016/j.jcrysgro.2009.12.048</a>","ieee":"M. Häberlen, J. W. Gerlach, B. Murphy, J. Lindner, and B. Stritzker, “Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si,” <i>Journal of Crystal Growth</i>, vol. 312, no. 6, pp. 762–769, 2009.","chicago":"Häberlen, M., J.W. Gerlach, B. Murphy, Jörg Lindner, and B. Stritzker. “Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown by IBA–MBE on SiC/Si.” <i>Journal of Crystal Growth</i> 312, no. 6 (2009): 762–69. <a href=\"https://doi.org/10.1016/j.jcrysgro.2009.12.048\">https://doi.org/10.1016/j.jcrysgro.2009.12.048</a>.","bibtex":"@article{Häberlen_Gerlach_Murphy_Lindner_Stritzker_2009, title={Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si}, volume={312}, DOI={<a href=\"https://doi.org/10.1016/j.jcrysgro.2009.12.048\">10.1016/j.jcrysgro.2009.12.048</a>}, number={6}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Häberlen, M. and Gerlach, J.W. and Murphy, B. and Lindner, Jörg and Stritzker, B.}, year={2009}, pages={762–769} }","mla":"Häberlen, M., et al. “Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown by IBA–MBE on SiC/Si.” <i>Journal of Crystal Growth</i>, vol. 312, no. 6, Elsevier BV, 2009, pp. 762–69, doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2009.12.048\">10.1016/j.jcrysgro.2009.12.048</a>.","short":"M. Häberlen, J.W. Gerlach, B. Murphy, J. Lindner, B. Stritzker, Journal of Crystal Growth 312 (2009) 762–769.","apa":"Häberlen, M., Gerlach, J. W., Murphy, B., Lindner, J., &#38; Stritzker, B. (2009). Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si. <i>Journal of Crystal Growth</i>, <i>312</i>(6), 762–769. <a href=\"https://doi.org/10.1016/j.jcrysgro.2009.12.048\">https://doi.org/10.1016/j.jcrysgro.2009.12.048</a>"},"has_accepted_license":"1","publication_identifier":{"issn":["0022-0248"]},"publication_status":"published"},{"year":"2009","issue":"1","title":"Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001)","publisher":"Wiley","date_created":"2018-08-28T12:15:20Z","abstract":[{"text":"The growth of cubic group III-nitrides is a direct way to eliminate polarization effects, which inherently limit the fabrication of normally-off heterojunction field-effect transistors (HFETs) in GaN technology. HFET structures were fabricated of non-polar cubic AlGaN/GaN hetero layers grown by plasma assisted molecular beam epitaxy (MBE) on free standing 3C-SiC (001). The electrical insulation of 3C-SiC was realised by Ar+ implantation before c-AlGaN/GaN MBE. The structural properties of the epilayers were studied by highresolution x-ray diffraction (HRXRD). HFETs with normally off and normally-on characteristics were fabricated of cubic AlGaN/GaN. Capacitance-voltage (CV) characteristics of thegate contact were performed to detect the electron channel at the c-AlGaN/GaN hetero interface.","lang":"eng"}],"file":[{"success":1,"relation":"main_file","content_type":"application/pdf","file_size":213837,"access_level":"closed","file_id":"4197","file_name":"Nonpolar cubic AlGaN-GaN HFETs grown by MBE on Ar+ implanted 3C SiC (001).pdf","date_updated":"2018-08-28T12:16:11Z","creator":"hclaudia","date_created":"2018-08-28T12:16:11Z"}],"publication":"physica status solidi (c)","ddc":["530"],"language":[{"iso":"eng"}],"citation":{"ieee":"E. Tschumak <i>et al.</i>, “Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001),” <i>physica status solidi (c)</i>, vol. 7, no. 1, pp. 104–107, 2009.","chicago":"Tschumak, Elena, Jörg Lindner, M. Bürger, K. Lischka, H. Nagasawa, M. Abe, and Donald As. “Non-Polar Cubic AlGaN/GaN HFETs Grown by MBE on Ar+implanted 3C-SiC (001).” <i>Physica Status Solidi (C)</i> 7, no. 1 (2009): 104–7. <a href=\"https://doi.org/10.1002/pssc.200982615\">https://doi.org/10.1002/pssc.200982615</a>.","ama":"Tschumak E, Lindner J, Bürger M, et al. Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001). <i>physica status solidi (c)</i>. 2009;7(1):104-107. doi:<a href=\"https://doi.org/10.1002/pssc.200982615\">10.1002/pssc.200982615</a>","mla":"Tschumak, Elena, et al. “Non-Polar Cubic AlGaN/GaN HFETs Grown by MBE on Ar+implanted 3C-SiC (001).” <i>Physica Status Solidi (C)</i>, vol. 7, no. 1, Wiley, 2009, pp. 104–07, doi:<a href=\"https://doi.org/10.1002/pssc.200982615\">10.1002/pssc.200982615</a>.","short":"E. Tschumak, J. Lindner, M. Bürger, K. Lischka, H. Nagasawa, M. Abe, D. As, Physica Status Solidi (C) 7 (2009) 104–107.","bibtex":"@article{Tschumak_Lindner_Bürger_Lischka_Nagasawa_Abe_As_2009, title={Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001)}, volume={7}, DOI={<a href=\"https://doi.org/10.1002/pssc.200982615\">10.1002/pssc.200982615</a>}, number={1}, journal={physica status solidi (c)}, publisher={Wiley}, author={Tschumak, Elena and Lindner, Jörg and Bürger, M. and Lischka, K. and Nagasawa, H. and Abe, M. and As, Donald}, year={2009}, pages={104–107} }","apa":"Tschumak, E., Lindner, J., Bürger, M., Lischka, K., Nagasawa, H., Abe, M., &#38; As, D. (2009). Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001). <i>Physica Status Solidi (C)</i>, <i>7</i>(1), 104–107. <a href=\"https://doi.org/10.1002/pssc.200982615\">https://doi.org/10.1002/pssc.200982615</a>"},"page":"104-107","intvolume":"         7","publication_status":"published","publication_identifier":{"issn":["1862-6351","1610-1642"]},"has_accepted_license":"1","doi":"10.1002/pssc.200982615","date_updated":"2022-01-06T07:00:33Z","author":[{"first_name":"Elena","last_name":"Tschumak","full_name":"Tschumak, Elena"},{"first_name":"Jörg","id":"20797","full_name":"Lindner, Jörg","last_name":"Lindner"},{"full_name":"Bürger, M.","last_name":"Bürger","first_name":"M."},{"full_name":"Lischka, K.","last_name":"Lischka","first_name":"K."},{"last_name":"Nagasawa","full_name":"Nagasawa, H.","first_name":"H."},{"first_name":"M.","last_name":"Abe","full_name":"Abe, M."},{"first_name":"Donald","last_name":"As","full_name":"As, Donald"}],"volume":7,"status":"public","type":"journal_article","article_type":"original","file_date_updated":"2018-08-28T12:16:11Z","_id":"4196","user_id":"55706","department":[{"_id":"15"},{"_id":"286"}]},{"date_created":"2018-08-28T12:19:16Z","publisher":"Elsevier BV","title":"Direction-selective optical transmission of 3D fcc photonic crystals in the microwave regime","issue":"2","year":"2009","language":[{"iso":"eng"}],"ddc":["530"],"publication":"Photonics and Nanostructures - Fundamentals and Applications","file":[{"success":1,"relation":"main_file","content_type":"application/pdf","file_size":310534,"file_name":"Direction-selective optical transmission of 3D fcc photonic crystals in the microwave regime.pdf","file_id":"4199","access_level":"closed","date_updated":"2018-08-28T12:19:51Z","date_created":"2018-08-28T12:19:51Z","creator":"hclaudia"}],"abstract":[{"text":"Three-dimensional (3D) photonic crystal exhibit direction-selective transmission with respect to the center frequency of the stop gap. As a model system, the stop gap of a 3D fcc inverted-opal photonic crystal is studied in the microwave regime in detail using 3D polyamide models. The difference in the direction-selective transmittance between crystals grown in two different high symmetry directions is experimentally shown and compared to numerical simulations.","lang":"eng"}],"author":[{"first_name":"J.","full_name":"Üpping, J.","last_name":"Üpping"},{"first_name":"P.T.","last_name":"Miclea","full_name":"Miclea, P.T."},{"first_name":"R.B.","full_name":"Wehrspohn, R.B.","last_name":"Wehrspohn"},{"first_name":"T.","last_name":"Baumgarten","full_name":"Baumgarten, T."},{"first_name":"Siegmund","last_name":"Greulich-Weber","full_name":"Greulich-Weber, Siegmund"}],"volume":8,"date_updated":"2022-01-06T07:00:33Z","doi":"10.1016/j.photonics.2009.11.002","publication_status":"published","publication_identifier":{"issn":["1569-4410"]},"has_accepted_license":"1","citation":{"mla":"Üpping, J., et al. “Direction-Selective Optical Transmission of 3D Fcc Photonic Crystals in the Microwave Regime.” <i>Photonics and Nanostructures - Fundamentals and Applications</i>, vol. 8, no. 2, Elsevier BV, 2009, pp. 102–06, doi:<a href=\"https://doi.org/10.1016/j.photonics.2009.11.002\">10.1016/j.photonics.2009.11.002</a>.","short":"J. Üpping, P.T. Miclea, R.B. Wehrspohn, T. Baumgarten, S. Greulich-Weber, Photonics and Nanostructures - Fundamentals and Applications 8 (2009) 102–106.","bibtex":"@article{Üpping_Miclea_Wehrspohn_Baumgarten_Greulich-Weber_2009, title={Direction-selective optical transmission of 3D fcc photonic crystals in the microwave regime}, volume={8}, DOI={<a href=\"https://doi.org/10.1016/j.photonics.2009.11.002\">10.1016/j.photonics.2009.11.002</a>}, number={2}, journal={Photonics and Nanostructures - Fundamentals and Applications}, publisher={Elsevier BV}, author={Üpping, J. and Miclea, P.T. and Wehrspohn, R.B. and Baumgarten, T. and Greulich-Weber, Siegmund}, year={2009}, pages={102–106} }","apa":"Üpping, J., Miclea, P. T., Wehrspohn, R. B., Baumgarten, T., &#38; Greulich-Weber, S. (2009). Direction-selective optical transmission of 3D fcc photonic crystals in the microwave regime. <i>Photonics and Nanostructures - Fundamentals and Applications</i>, <i>8</i>(2), 102–106. <a href=\"https://doi.org/10.1016/j.photonics.2009.11.002\">https://doi.org/10.1016/j.photonics.2009.11.002</a>","chicago":"Üpping, J., P.T. Miclea, R.B. Wehrspohn, T. Baumgarten, and Siegmund Greulich-Weber. “Direction-Selective Optical Transmission of 3D Fcc Photonic Crystals in the Microwave Regime.” <i>Photonics and Nanostructures - Fundamentals and Applications</i> 8, no. 2 (2009): 102–6. <a href=\"https://doi.org/10.1016/j.photonics.2009.11.002\">https://doi.org/10.1016/j.photonics.2009.11.002</a>.","ieee":"J. Üpping, P. T. Miclea, R. B. Wehrspohn, T. Baumgarten, and S. Greulich-Weber, “Direction-selective optical transmission of 3D fcc photonic crystals in the microwave regime,” <i>Photonics and Nanostructures - Fundamentals and Applications</i>, vol. 8, no. 2, pp. 102–106, 2009.","ama":"Üpping J, Miclea PT, Wehrspohn RB, Baumgarten T, Greulich-Weber S. Direction-selective optical transmission of 3D fcc photonic crystals in the microwave regime. <i>Photonics and Nanostructures - Fundamentals and Applications</i>. 2009;8(2):102-106. doi:<a href=\"https://doi.org/10.1016/j.photonics.2009.11.002\">10.1016/j.photonics.2009.11.002</a>"},"page":"102-106","intvolume":"         8","user_id":"55706","department":[{"_id":"15"}],"_id":"4198","file_date_updated":"2018-08-28T12:19:51Z","article_type":"original","type":"journal_article","status":"public"},{"author":[{"first_name":"Siegmund","last_name":"Greulich-Weber","full_name":"Greulich-Weber, Siegmund"},{"last_name":"Zöller","full_name":"Zöller, M.","first_name":"M."},{"full_name":"Friedel, B.","last_name":"Friedel","first_name":"B."}],"date_created":"2018-08-28T13:00:44Z","volume":"615-617","publisher":"Trans Tech Publications","date_updated":"2022-01-06T07:00:38Z","doi":"10.4028/www.scientific.net/msf.615-617.239","title":"Textile Solar Cells Based on SiC Microwires","publication_status":"published","publication_identifier":{"issn":["1662-9752"]},"citation":{"ama":"Greulich-Weber S, Zöller M, Friedel B. Textile Solar Cells Based on SiC Microwires. <i>Materials Science Forum</i>. 2009;615-617:239-242. doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.615-617.239\">10.4028/www.scientific.net/msf.615-617.239</a>","ieee":"S. Greulich-Weber, M. Zöller, and B. Friedel, “Textile Solar Cells Based on SiC Microwires,” <i>Materials Science Forum</i>, vol. 615–617, pp. 239–242, 2009.","chicago":"Greulich-Weber, Siegmund, M. Zöller, and B. Friedel. “Textile Solar Cells Based on SiC Microwires.” <i>Materials Science Forum</i> 615–617 (2009): 239–42. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.615-617.239\">https://doi.org/10.4028/www.scientific.net/msf.615-617.239</a>.","apa":"Greulich-Weber, S., Zöller, M., &#38; Friedel, B. (2009). Textile Solar Cells Based on SiC Microwires. <i>Materials Science Forum</i>, <i>615</i>–<i>617</i>, 239–242. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.615-617.239\">https://doi.org/10.4028/www.scientific.net/msf.615-617.239</a>","short":"S. Greulich-Weber, M. Zöller, B. Friedel, Materials Science Forum 615–617 (2009) 239–242.","mla":"Greulich-Weber, Siegmund, et al. “Textile Solar Cells Based on SiC Microwires.” <i>Materials Science Forum</i>, vol. 615–617, Trans Tech Publications, 2009, pp. 239–42, doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.615-617.239\">10.4028/www.scientific.net/msf.615-617.239</a>.","bibtex":"@article{Greulich-Weber_Zöller_Friedel_2009, title={Textile Solar Cells Based on SiC Microwires}, volume={615–617}, DOI={<a href=\"https://doi.org/10.4028/www.scientific.net/msf.615-617.239\">10.4028/www.scientific.net/msf.615-617.239</a>}, journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Greulich-Weber, Siegmund and Zöller, M. and Friedel, B.}, year={2009}, pages={239–242} }"},"page":"239-242","year":"2009","user_id":"55706","department":[{"_id":"15"}],"_id":"4219","language":[{"iso":"eng"}],"article_type":"original","type":"journal_article","publication":"Materials Science Forum","status":"public","abstract":[{"lang":"eng","text":"The solar cell concept presented here is based on 3C-SiC nano- or microwires and conju¬gated polymers. Therefore the silicon carbide wires are fabricated by a sol-gel route including a car-bothermal reduction step, allowing growth with predetermined uniform diameters between 0.1 and 2μm and lengths up to several centimetres. The design of our photovoltaic device is therein based on a p-i-n structure, well known e.g. from silicon photovoltaics, involving an intrinsic semiconduc¬tor as the central photoactive layer, sandwiched between two complementary doped wide-bandgap semiconductors giving the driving force for charge separation. In our case the 3C-SiC microwires act as the electron acceptor and simultaneously as carrier material for all involved components of the photovoltaic element. "}]},{"publication":"Materials Science Forum","type":"journal_article","status":"public","abstract":[{"text":"We report on constructive methods providing a large range of high purity porous SiC products. All methods are based on modified sol-gel processes combined with carbothermal re¬duction. We obtain monodisperse regular pores of well defined diameters by using carbon sphere templates which are removed after SiC infiltration. A different way is a sol-gel based conversion of graphite bodies into SiC, which transfers the porosity from the graphite matrix into the final SiC product. Thus a large variety of porosity features are available, originating either from natural poro¬sity of graphite or from priorly created nano-/ microstructures in the carbonaceous base material. Whereas all our pristine porous sol-gel derived silicon carbide products are semi-insulating, doping is possible, during the growth to modifiy the electrical and optical properties. ","lang":"eng"}],"department":[{"_id":"15"}],"user_id":"55706","_id":"4220","language":[{"iso":"eng"}],"article_type":"original","publication_identifier":{"issn":["1662-9752"]},"publication_status":"published","page":"637-640","citation":{"ieee":"S. Greulich-Weber and B. Friedel, “Bottom-Up Routes to Porous Silicon Carbide,” <i>Materials Science Forum</i>, vol. 615–617, pp. 637–640, 2009.","chicago":"Greulich-Weber, Siegmund, and B. Friedel. “Bottom-Up Routes to Porous Silicon Carbide.” <i>Materials Science Forum</i> 615–617 (2009): 637–40. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.615-617.637\">https://doi.org/10.4028/www.scientific.net/msf.615-617.637</a>.","ama":"Greulich-Weber S, Friedel B. Bottom-Up Routes to Porous Silicon Carbide. <i>Materials Science Forum</i>. 2009;615-617:637-640. doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.615-617.637\">10.4028/www.scientific.net/msf.615-617.637</a>","bibtex":"@article{Greulich-Weber_Friedel_2009, title={Bottom-Up Routes to Porous Silicon Carbide}, volume={615–617}, DOI={<a href=\"https://doi.org/10.4028/www.scientific.net/msf.615-617.637\">10.4028/www.scientific.net/msf.615-617.637</a>}, journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Greulich-Weber, Siegmund and Friedel, B.}, year={2009}, pages={637–640} }","short":"S. Greulich-Weber, B. Friedel, Materials Science Forum 615–617 (2009) 637–640.","mla":"Greulich-Weber, Siegmund, and B. Friedel. “Bottom-Up Routes to Porous Silicon Carbide.” <i>Materials Science Forum</i>, vol. 615–617, Trans Tech Publications, 2009, pp. 637–40, doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.615-617.637\">10.4028/www.scientific.net/msf.615-617.637</a>.","apa":"Greulich-Weber, S., &#38; Friedel, B. (2009). Bottom-Up Routes to Porous Silicon Carbide. <i>Materials Science Forum</i>, <i>615</i>–<i>617</i>, 637–640. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.615-617.637\">https://doi.org/10.4028/www.scientific.net/msf.615-617.637</a>"},"year":"2009","volume":"615-617","date_created":"2018-08-28T13:02:05Z","author":[{"last_name":"Greulich-Weber","full_name":"Greulich-Weber, Siegmund","first_name":"Siegmund"},{"first_name":"B.","full_name":"Friedel, B.","last_name":"Friedel"}],"publisher":"Trans Tech Publications","date_updated":"2022-01-06T07:00:38Z","doi":"10.4028/www.scientific.net/msf.615-617.637","title":"Bottom-Up Routes to Porous Silicon Carbide"},{"publication":"Materials Science Forum","type":"journal_article","abstract":[{"lang":"eng","text":"EPR and ESE in nitrogen doped 4H- and 6H-SiC show besides the well known triplet lines of 14N on quasi-cubic (Nc,k) and hexagonal (Nc,h) sites additional lines (Nx) of comparatively low intensity providing half the hf splitting of Nc,k. Frequently re-interpreted as spin-forbidden lines, arising from Nc,k pairs and triads or resulting from hopping conductivity, only recently the theoretical calculation of the corresponding g-tensors lead to a tentative model of distant NC donor pairs on inequivalent lattice sites which are coupled to S = 1 assuming a fine-structure splitting too small to be observed in the EPR and ESE experiments. In this work, we present ESE nutation measurements confirming S = 1 for the Nx center. Analysing the nutation frequencies in comparison with that of the Nc,k (S = 1/2) spectrum as well as the line width of ESE and EPR spectra we obtain a rough estimate between 5×104 cm-1 and 50×104 cm-1 for the fine-structure splitting demonstrating efficient spin-coupling between nitrogen donors in 4H-SiC."}],"status":"public","_id":"4225","department":[{"_id":"15"}],"user_id":"55706","article_type":"original","language":[{"iso":"eng"}],"publication_identifier":{"issn":["1662-9752"]},"publication_status":"published","year":"2009","page":"343-346","citation":{"mla":"Savchenko, D. V., et al. “Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC.” <i>Materials Science Forum</i>, vol. 615–617, Trans Tech Publications, 2009, pp. 343–46, doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.615-617.343\">10.4028/www.scientific.net/msf.615-617.343</a>.","bibtex":"@article{Savchenko_Pöppl_Kalabukhova_Greulich-Weber_Rauls_Schmidt_Gerstmann_2009, title={Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC}, volume={615–617}, DOI={<a href=\"https://doi.org/10.4028/www.scientific.net/msf.615-617.343\">10.4028/www.scientific.net/msf.615-617.343</a>}, journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Savchenko, D.V. and Pöppl, Andreas and Kalabukhova, Ekaterina N. and Greulich-Weber, Siegmund and Rauls, Eva and Schmidt, Wolf Gero and Gerstmann, Uwe}, year={2009}, pages={343–346} }","short":"D.V. Savchenko, A. Pöppl, E.N. Kalabukhova, S. Greulich-Weber, E. Rauls, W.G. Schmidt, U. Gerstmann, Materials Science Forum 615–617 (2009) 343–346.","apa":"Savchenko, D. V., Pöppl, A., Kalabukhova, E. N., Greulich-Weber, S., Rauls, E., Schmidt, W. G., &#38; Gerstmann, U. (2009). Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC. <i>Materials Science Forum</i>, <i>615</i>–<i>617</i>, 343–346. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.615-617.343\">https://doi.org/10.4028/www.scientific.net/msf.615-617.343</a>","chicago":"Savchenko, D.V., Andreas Pöppl, Ekaterina N. Kalabukhova, Siegmund Greulich-Weber, Eva Rauls, Wolf Gero Schmidt, and Uwe Gerstmann. “Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC.” <i>Materials Science Forum</i> 615–617 (2009): 343–46. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.615-617.343\">https://doi.org/10.4028/www.scientific.net/msf.615-617.343</a>.","ieee":"D. V. Savchenko <i>et al.</i>, “Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC,” <i>Materials Science Forum</i>, vol. 615–617, pp. 343–346, 2009.","ama":"Savchenko DV, Pöppl A, Kalabukhova EN, et al. Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC. <i>Materials Science Forum</i>. 2009;615-617:343-346. doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.615-617.343\">10.4028/www.scientific.net/msf.615-617.343</a>"},"date_updated":"2022-01-06T07:00:39Z","publisher":"Trans Tech Publications","volume":"615-617","date_created":"2018-08-28T13:09:27Z","author":[{"last_name":"Savchenko","full_name":"Savchenko, D.V.","first_name":"D.V."},{"full_name":"Pöppl, Andreas","last_name":"Pöppl","first_name":"Andreas"},{"first_name":"Ekaterina N.","last_name":"Kalabukhova","full_name":"Kalabukhova, Ekaterina N."},{"first_name":"Siegmund","full_name":"Greulich-Weber, Siegmund","last_name":"Greulich-Weber"},{"last_name":"Rauls","full_name":"Rauls, Eva","first_name":"Eva"},{"first_name":"Wolf Gero","full_name":"Schmidt, Wolf Gero","last_name":"Schmidt"},{"first_name":"Uwe","full_name":"Gerstmann, Uwe","last_name":"Gerstmann"}],"title":"Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC","doi":"10.4028/www.scientific.net/msf.615-617.343"},{"file":[{"date_updated":"2018-08-28T13:12:36Z","date_created":"2018-08-28T13:12:36Z","creator":"hclaudia","file_size":223477,"file_id":"4227","access_level":"closed","file_name":"Vacancy clusters created via room temperature irradiation in 6H-SiC.pdf","content_type":"application/pdf","success":1,"relation":"main_file"}],"abstract":[{"lang":"eng","text":"In non-annealed 6H-SiC samples that were electron irradiated at low temperature, a new EPR signal due to a\r\nS =1 defect center with exceptionally large zero-field splitting (D= +652\u000210\u00034cm\u00031,E=\u00038\u000210\u00034cm\u00031) has been observed under illumination. A positive sign of D demonstrates that the spin–orbit contribution to the zero-field splitting exceeds by far that of the spin–spin interaction. A principal axis of the fine-structure tilted by 59 1 against the crystal\r\nc -axis as well as the exceptionally high zero-field splitting D can be qualitatively understood by the occurrence of additional close-lying defect levels in defect clusters resulting in comparatively large second-order spin–orbit coupling. A tentative assignment to vacancy clusters is supported by the observed annealing behavior."}],"publication":"Physica B: Condensed Matter","language":[{"iso":"eng"}],"ddc":["530"],"year":"2009","issue":"23-24","title":"Vacancy clusters created via room temperature irradiation in 6H-SiC","date_created":"2018-08-28T13:11:31Z","publisher":"Elsevier BV","status":"public","type":"journal_article","file_date_updated":"2018-08-28T13:12:36Z","article_type":"original","user_id":"55706","department":[{"_id":"15"}],"_id":"4226","citation":{"bibtex":"@article{Scholle_Greulich-Weber_Rauls_Schmidt_Gerstmann_2009, title={Vacancy clusters created via room temperature irradiation in 6H-SiC}, volume={404}, DOI={<a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">10.1016/j.physb.2009.08.123</a>}, number={23–24}, journal={Physica B: Condensed Matter}, publisher={Elsevier BV}, author={Scholle, A. and Greulich-Weber, S. and Rauls, E. and Schmidt, W.G. and Gerstmann, U.}, year={2009}, pages={4742–4744} }","short":"A. Scholle, S. Greulich-Weber, E. Rauls, W.G. Schmidt, U. Gerstmann, Physica B: Condensed Matter 404 (2009) 4742–4744.","mla":"Scholle, A., et al. “Vacancy Clusters Created via Room Temperature Irradiation in 6H-SiC.” <i>Physica B: Condensed Matter</i>, vol. 404, no. 23–24, Elsevier BV, 2009, pp. 4742–44, doi:<a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">10.1016/j.physb.2009.08.123</a>.","apa":"Scholle, A., Greulich-Weber, S., Rauls, E., Schmidt, W. G., &#38; Gerstmann, U. (2009). Vacancy clusters created via room temperature irradiation in 6H-SiC. <i>Physica B: Condensed Matter</i>, <i>404</i>(23–24), 4742–4744. <a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">https://doi.org/10.1016/j.physb.2009.08.123</a>","chicago":"Scholle, A., S. Greulich-Weber, E. Rauls, W.G. Schmidt, and U. Gerstmann. “Vacancy Clusters Created via Room Temperature Irradiation in 6H-SiC.” <i>Physica B: Condensed Matter</i> 404, no. 23–24 (2009): 4742–44. <a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">https://doi.org/10.1016/j.physb.2009.08.123</a>.","ieee":"A. Scholle, S. Greulich-Weber, E. Rauls, W. G. Schmidt, and U. Gerstmann, “Vacancy clusters created via room temperature irradiation in 6H-SiC,” <i>Physica B: Condensed Matter</i>, vol. 404, no. 23–24, pp. 4742–4744, 2009.","ama":"Scholle A, Greulich-Weber S, Rauls E, Schmidt WG, Gerstmann U. Vacancy clusters created via room temperature irradiation in 6H-SiC. <i>Physica B: Condensed Matter</i>. 2009;404(23-24):4742-4744. doi:<a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">10.1016/j.physb.2009.08.123</a>"},"page":"4742-4744","intvolume":"       404","publication_status":"published","has_accepted_license":"1","publication_identifier":{"issn":["0921-4526"]},"doi":"10.1016/j.physb.2009.08.123","author":[{"last_name":"Scholle","full_name":"Scholle, A.","first_name":"A."},{"full_name":"Greulich-Weber, S.","last_name":"Greulich-Weber","first_name":"S."},{"last_name":"Rauls","full_name":"Rauls, E.","first_name":"E."},{"full_name":"Schmidt, W.G.","last_name":"Schmidt","first_name":"W.G."},{"first_name":"U.","last_name":"Gerstmann","full_name":"Gerstmann, U."}],"volume":404,"date_updated":"2022-01-06T07:00:39Z"},{"abstract":[{"lang":"eng","text":"The issues and challenges of growing GaN-based structures on large area Si substrates have been studied. These include Si slip resulting from large temperature non-uniformities and cracking due to differential thermal expansion. Using an AlN nucleation layer in conjunction with an AlGaN buffer layer for stress management, and together with the interactive use of real time in-situ optical monitoring it was possible to realise flat, crack-free and uniform GaN and LED structures on 6-inch Si (111) substrates. The EL performance of processed LED devices was also studied on-wafer, giving good EL characteristics including a forward bias voltage of ~3.5 V at 20 mA from a 500 μm x 500 μm device."}],"publication":"Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII","language":[{"iso":"eng"}],"year":"2009","title":"GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE","date_created":"2018-08-28T13:15:19Z","publisher":"SPIE","status":"public","editor":[{"first_name":"Klaus P.","full_name":"Streubel, Klaus P.","last_name":"Streubel"},{"first_name":"Heonsu","full_name":"Jeon, Heonsu","last_name":"Jeon"},{"first_name":"Li-Wei","full_name":"Tu, Li-Wei","last_name":"Tu"}],"type":"conference","article_number":"723118","department":[{"_id":"15"}],"user_id":"55706","_id":"4228","intvolume":"      7231","citation":{"chicago":"Zhu, D., C. McAleese, K. K. McLaughlin, M. Häberlen, C. O. Salcianu, E. J. Thrush, M. J. Kappers, et al. “GaN-Based LEDs Grown on 6-Inch Diameter Si (111) Substrates by MOVPE.” In <i>Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII</i>, edited by Klaus P. Streubel, Heonsu Jeon, and Li-Wei Tu, Vol. 7231. SPIE, 2009. <a href=\"https://doi.org/10.1117/12.814919\">https://doi.org/10.1117/12.814919</a>.","ieee":"D. Zhu <i>et al.</i>, “GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE,” in <i>Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII</i>, San Jose, California (USA), 2009, vol. 7231.","ama":"Zhu D, McAleese C, McLaughlin KK, et al. GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE. In: Streubel KP, Jeon H, Tu L-W, eds. <i>Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII</i>. Vol 7231. SPIE; 2009. doi:<a href=\"https://doi.org/10.1117/12.814919\">10.1117/12.814919</a>","bibtex":"@inproceedings{Zhu_McAleese_McLaughlin_Häberlen_Salcianu_Thrush_Kappers_Phillips_Lane_Wallis_et al._2009, title={GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE}, volume={7231}, DOI={<a href=\"https://doi.org/10.1117/12.814919\">10.1117/12.814919</a>}, number={723118}, booktitle={Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII}, publisher={SPIE}, author={Zhu, D. and McAleese, C. and McLaughlin, K. K. and Häberlen, M. and Salcianu, C. O. and Thrush, E. J. and Kappers, M. J. and Phillips, W. A. and Lane, P. and Wallis, D. J. and et al.}, editor={Streubel, Klaus P. and Jeon, Heonsu and Tu, Li-WeiEditors}, year={2009} }","mla":"Zhu, D., et al. “GaN-Based LEDs Grown on 6-Inch Diameter Si (111) Substrates by MOVPE.” <i>Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII</i>, edited by Klaus P. Streubel et al., vol. 7231, 723118, SPIE, 2009, doi:<a href=\"https://doi.org/10.1117/12.814919\">10.1117/12.814919</a>.","short":"D. Zhu, C. McAleese, K.K. McLaughlin, M. Häberlen, C.O. Salcianu, E.J. Thrush, M.J. Kappers, W.A. Phillips, P. Lane, D.J. Wallis, T. Martin, M. Astles, S. Thomas, A. Pakes, M. Heuken, C.J. Humphreys, in: K.P. Streubel, H. Jeon, L.-W. Tu (Eds.), Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII, SPIE, 2009.","apa":"Zhu, D., McAleese, C., McLaughlin, K. K., Häberlen, M., Salcianu, C. O., Thrush, E. J., … Humphreys, C. J. (2009). GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE. In K. P. Streubel, H. Jeon, &#38; L.-W. Tu (Eds.), <i>Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII</i> (Vol. 7231). San Jose, California (USA): SPIE. <a href=\"https://doi.org/10.1117/12.814919\">https://doi.org/10.1117/12.814919</a>"},"publication_status":"published","conference":{"name":"SPIE OPTO: Integrated Optoelectronic Devices, 2009","location":"San Jose, California (USA)"},"doi":"10.1117/12.814919","volume":7231,"author":[{"first_name":"D.","last_name":"Zhu","full_name":"Zhu, D."},{"first_name":"C.","full_name":"McAleese, C.","last_name":"McAleese"},{"last_name":"McLaughlin","full_name":"McLaughlin, K. K.","first_name":"K. K."},{"last_name":"Häberlen","full_name":"Häberlen, M.","first_name":"M."},{"last_name":"Salcianu","full_name":"Salcianu, C. O.","first_name":"C. O."},{"last_name":"Thrush","full_name":"Thrush, E. J.","first_name":"E. J."},{"first_name":"M. J.","full_name":"Kappers, M. J.","last_name":"Kappers"},{"first_name":"W. A.","last_name":"Phillips","full_name":"Phillips, W. A."},{"last_name":"Lane","full_name":"Lane, P.","first_name":"P."},{"first_name":"D. J.","last_name":"Wallis","full_name":"Wallis, D. J."},{"first_name":"T.","full_name":"Martin, T.","last_name":"Martin"},{"last_name":"Astles","full_name":"Astles, M.","first_name":"M."},{"first_name":"S.","last_name":"Thomas","full_name":"Thomas, S."},{"full_name":"Pakes, A.","last_name":"Pakes","first_name":"A."},{"first_name":"M.","last_name":"Heuken","full_name":"Heuken, M."},{"first_name":"C. J.","last_name":"Humphreys","full_name":"Humphreys, C. J."}],"date_updated":"2022-01-06T07:00:39Z"}]