[{"_id":"4554","user_id":"49428","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"article_type":"original","keyword":["CdSe quantum dots","Photodiode","Stark effect"],"language":[{"iso":"eng"}],"type":"journal_article","publication":"Microelectronics Journal","abstract":[{"text":"We have investigated the properties of neutral and charged excitons in single CdSe/ZnSe QD photodiodes by μ-photoluminescence spectroscopy. By applying a bias voltage, we have been able to control the number of electrons in a single QD by shifting the energy levels of the QD with respect to the Fermi level in the back contact. Also the quantum-confined Stark effect was observed as a function of the applied electric field.","lang":"eng"}],"status":"public","publisher":"Elsevier BV","date_updated":"2022-01-06T07:01:09Z","author":[{"last_name":"de Vasconcellos","full_name":"de Vasconcellos, S. Michaelis","first_name":"S. Michaelis"},{"full_name":"Pawlis, A.","last_name":"Pawlis","first_name":"A."},{"first_name":"C.","full_name":"Arens, C.","last_name":"Arens"},{"first_name":"M.","last_name":"Panfilova","full_name":"Panfilova, M."},{"id":"606","full_name":"Zrenner, Artur","last_name":"Zrenner","orcid":"0000-0002-5190-0944","first_name":"Artur"},{"first_name":"D.","full_name":"Schikora, D.","last_name":"Schikora"},{"first_name":"K.","full_name":"Lischka, K.","last_name":"Lischka"}],"date_created":"2018-09-20T13:37:03Z","volume":40,"title":"Exciton spectroscopy on single CdSe/ZnSe quantum dot photodiodes","doi":"10.1016/j.mejo.2008.07.055","publication_status":"published","publication_identifier":{"issn":["0026-2692"]},"issue":"2","year":"2008","citation":{"apa":"de Vasconcellos, S. M., Pawlis, A., Arens, C., Panfilova, M., Zrenner, A., Schikora, D., &#38; Lischka, K. (2008). Exciton spectroscopy on single CdSe/ZnSe quantum dot photodiodes. <i>Microelectronics Journal</i>, <i>40</i>(2), 215–217. <a href=\"https://doi.org/10.1016/j.mejo.2008.07.055\">https://doi.org/10.1016/j.mejo.2008.07.055</a>","bibtex":"@article{de Vasconcellos_Pawlis_Arens_Panfilova_Zrenner_Schikora_Lischka_2008, title={Exciton spectroscopy on single CdSe/ZnSe quantum dot photodiodes}, volume={40}, DOI={<a href=\"https://doi.org/10.1016/j.mejo.2008.07.055\">10.1016/j.mejo.2008.07.055</a>}, number={2}, journal={Microelectronics Journal}, publisher={Elsevier BV}, author={de Vasconcellos, S. Michaelis and Pawlis, A. and Arens, C. and Panfilova, M. and Zrenner, Artur and Schikora, D. and Lischka, K.}, year={2008}, pages={215–217} }","short":"S.M. de Vasconcellos, A. Pawlis, C. Arens, M. Panfilova, A. Zrenner, D. Schikora, K. Lischka, Microelectronics Journal 40 (2008) 215–217.","mla":"de Vasconcellos, S. Michaelis, et al. “Exciton Spectroscopy on Single CdSe/ZnSe Quantum Dot Photodiodes.” <i>Microelectronics Journal</i>, vol. 40, no. 2, Elsevier BV, 2008, pp. 215–17, doi:<a href=\"https://doi.org/10.1016/j.mejo.2008.07.055\">10.1016/j.mejo.2008.07.055</a>.","ieee":"S. M. de Vasconcellos <i>et al.</i>, “Exciton spectroscopy on single CdSe/ZnSe quantum dot photodiodes,” <i>Microelectronics Journal</i>, vol. 40, no. 2, pp. 215–217, 2008.","chicago":"Vasconcellos, S. Michaelis de, A. Pawlis, C. Arens, M. Panfilova, Artur Zrenner, D. Schikora, and K. Lischka. “Exciton Spectroscopy on Single CdSe/ZnSe Quantum Dot Photodiodes.” <i>Microelectronics Journal</i> 40, no. 2 (2008): 215–17. <a href=\"https://doi.org/10.1016/j.mejo.2008.07.055\">https://doi.org/10.1016/j.mejo.2008.07.055</a>.","ama":"de Vasconcellos SM, Pawlis A, Arens C, et al. Exciton spectroscopy on single CdSe/ZnSe quantum dot photodiodes. <i>Microelectronics Journal</i>. 2008;40(2):215-217. doi:<a href=\"https://doi.org/10.1016/j.mejo.2008.07.055\">10.1016/j.mejo.2008.07.055</a>"},"intvolume":"        40","page":"215-217"},{"type":"journal_article","status":"public","_id":"4555","user_id":"49428","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"article_type":"original","publication_status":"published","publication_identifier":{"issn":["0026-2692"]},"citation":{"chicago":"Panfilova, M., A. Pawlis, C. Arens, S. Michaelis de Vasconcellos, Gerhard Berth, K.P. Hüsch, V. Wiedemeier, Artur Zrenner, and K. Lischka. “Micro-Raman Imaging and Micro-Photoluminescence Measurements of Strain in ZnMgSe/ZnSe Microdiscs.” <i>Microelectronics Journal</i> 40, no. 2 (2008): 221–23. <a href=\"https://doi.org/10.1016/j.mejo.2008.07.056\">https://doi.org/10.1016/j.mejo.2008.07.056</a>.","ieee":"M. Panfilova <i>et al.</i>, “Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs,” <i>Microelectronics Journal</i>, vol. 40, no. 2, pp. 221–223, 2008.","ama":"Panfilova M, Pawlis A, Arens C, et al. Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs. <i>Microelectronics Journal</i>. 2008;40(2):221-223. doi:<a href=\"https://doi.org/10.1016/j.mejo.2008.07.056\">10.1016/j.mejo.2008.07.056</a>","mla":"Panfilova, M., et al. “Micro-Raman Imaging and Micro-Photoluminescence Measurements of Strain in ZnMgSe/ZnSe Microdiscs.” <i>Microelectronics Journal</i>, vol. 40, no. 2, Elsevier BV, 2008, pp. 221–23, doi:<a href=\"https://doi.org/10.1016/j.mejo.2008.07.056\">10.1016/j.mejo.2008.07.056</a>.","bibtex":"@article{Panfilova_Pawlis_Arens_de Vasconcellos_Berth_Hüsch_Wiedemeier_Zrenner_Lischka_2008, title={Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs}, volume={40}, DOI={<a href=\"https://doi.org/10.1016/j.mejo.2008.07.056\">10.1016/j.mejo.2008.07.056</a>}, number={2}, journal={Microelectronics Journal}, publisher={Elsevier BV}, author={Panfilova, M. and Pawlis, A. and Arens, C. and de Vasconcellos, S. Michaelis and Berth, Gerhard and Hüsch, K.P. and Wiedemeier, V. and Zrenner, Artur and Lischka, K.}, year={2008}, pages={221–223} }","short":"M. Panfilova, A. Pawlis, C. Arens, S.M. de Vasconcellos, G. Berth, K.P. Hüsch, V. Wiedemeier, A. Zrenner, K. Lischka, Microelectronics Journal 40 (2008) 221–223.","apa":"Panfilova, M., Pawlis, A., Arens, C., de Vasconcellos, S. M., Berth, G., Hüsch, K. P., … Lischka, K. (2008). Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs. <i>Microelectronics Journal</i>, <i>40</i>(2), 221–223. <a href=\"https://doi.org/10.1016/j.mejo.2008.07.056\">https://doi.org/10.1016/j.mejo.2008.07.056</a>"},"page":"221-223","intvolume":"        40","date_updated":"2022-01-06T07:01:09Z","author":[{"last_name":"Panfilova","full_name":"Panfilova, M.","first_name":"M."},{"last_name":"Pawlis","full_name":"Pawlis, A.","first_name":"A."},{"last_name":"Arens","full_name":"Arens, C.","first_name":"C."},{"last_name":"de Vasconcellos","full_name":"de Vasconcellos, S. Michaelis","first_name":"S. Michaelis"},{"last_name":"Berth","full_name":"Berth, Gerhard","id":"53","first_name":"Gerhard"},{"last_name":"Hüsch","full_name":"Hüsch, K.P.","first_name":"K.P."},{"first_name":"V.","full_name":"Wiedemeier, V.","last_name":"Wiedemeier"},{"first_name":"Artur","id":"606","full_name":"Zrenner, Artur","last_name":"Zrenner","orcid":"0000-0002-5190-0944"},{"last_name":"Lischka","full_name":"Lischka, K.","first_name":"K."}],"volume":40,"doi":"10.1016/j.mejo.2008.07.056","publication":"Microelectronics Journal","abstract":[{"lang":"eng","text":"Semiconductor microdiscs are promising for applications in photonics and quantum-information processing, such as efficient solid-state-based single-photon emitters. Strain in the multilayer structure of those devices has an important influence on their optical properties. We present measurements of the strain distribution in ZnMgSe/ZnSe microdiscs by means of micro-photoluminescence and micro-Raman imaging. Photoluminescence measurements of microdiscs reveal substantially broadened emission lines with a shift to lower energy at the undercut part of microdiscs, indicating local relaxation in this area. The distribution of the strain in the microdiscs is obtained from an imaging micro-Raman analysis, revealing that the freestanding part of the microdiscs is free of defects."}],"keyword":["Raman","Photoluminescence","Microdisc","ZnSe"],"language":[{"iso":"eng"}],"issue":"2","year":"2008","publisher":"Elsevier BV","date_created":"2018-09-20T13:39:35Z","title":"Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs"},{"title":"Coherent optoelectronics with single quantum dots","publisher":"IOP Publishing","date_created":"2018-09-20T13:51:11Z","year":"2008","issue":"45","language":[{"iso":"eng"}],"abstract":[{"text":"The optical properties of semiconductor quantum dots are in many respects similar to those of atoms. Since quantum dots can be defined by state-of-the-art semiconductor technologies, they exhibit long-term stability and allow for well-controlled and efficient interactions with both optical and electrical fields. Resonant ps excitation of single quantum dot photodiodes leads to new classes of coherent optoelectronic functions and devices, which exhibit precise state preparation, phase-sensitive optical manipulations and the control of quantum states by electrical fields.","lang":"eng"}],"publication":"Journal of Physics: Condensed Matter","doi":"10.1088/0953-8984/20/45/454210","date_updated":"2022-01-06T07:01:09Z","author":[{"first_name":"Artur","id":"606","full_name":"Zrenner, Artur","orcid":"0000-0002-5190-0944","last_name":"Zrenner"},{"first_name":"P","last_name":"Ester","full_name":"Ester, P"},{"first_name":"S","full_name":"Michaelis de Vasconcellos, S","last_name":"Michaelis de Vasconcellos"},{"full_name":"Hübner, M C","last_name":"Hübner","first_name":"M C"},{"last_name":"Lackmann","full_name":"Lackmann, L","first_name":"L"},{"last_name":"Stufler","full_name":"Stufler, S","first_name":"S"},{"last_name":"Bichler","full_name":"Bichler, M","first_name":"M"}],"volume":20,"citation":{"apa":"Zrenner, A., Ester, P., Michaelis de Vasconcellos, S., Hübner, M. C., Lackmann, L., Stufler, S., &#38; Bichler, M. (2008). Coherent optoelectronics with single quantum dots. <i>Journal of Physics: Condensed Matter</i>, <i>20</i>(45). <a href=\"https://doi.org/10.1088/0953-8984/20/45/454210\">https://doi.org/10.1088/0953-8984/20/45/454210</a>","short":"A. Zrenner, P. Ester, S. Michaelis de Vasconcellos, M.C. Hübner, L. Lackmann, S. Stufler, M. Bichler, Journal of Physics: Condensed Matter 20 (2008).","mla":"Zrenner, Artur, et al. “Coherent Optoelectronics with Single Quantum Dots.” <i>Journal of Physics: Condensed Matter</i>, vol. 20, no. 45, 454210, IOP Publishing, 2008, doi:<a href=\"https://doi.org/10.1088/0953-8984/20/45/454210\">10.1088/0953-8984/20/45/454210</a>.","bibtex":"@article{Zrenner_Ester_Michaelis de Vasconcellos_Hübner_Lackmann_Stufler_Bichler_2008, title={Coherent optoelectronics with single quantum dots}, volume={20}, DOI={<a href=\"https://doi.org/10.1088/0953-8984/20/45/454210\">10.1088/0953-8984/20/45/454210</a>}, number={45454210}, journal={Journal of Physics: Condensed Matter}, publisher={IOP Publishing}, author={Zrenner, Artur and Ester, P and Michaelis de Vasconcellos, S and Hübner, M C and Lackmann, L and Stufler, S and Bichler, M}, year={2008} }","chicago":"Zrenner, Artur, P Ester, S Michaelis de Vasconcellos, M C Hübner, L Lackmann, S Stufler, and M Bichler. “Coherent Optoelectronics with Single Quantum Dots.” <i>Journal of Physics: Condensed Matter</i> 20, no. 45 (2008). <a href=\"https://doi.org/10.1088/0953-8984/20/45/454210\">https://doi.org/10.1088/0953-8984/20/45/454210</a>.","ieee":"A. Zrenner <i>et al.</i>, “Coherent optoelectronics with single quantum dots,” <i>Journal of Physics: Condensed Matter</i>, vol. 20, no. 45, 2008.","ama":"Zrenner A, Ester P, Michaelis de Vasconcellos S, et al. Coherent optoelectronics with single quantum dots. <i>Journal of Physics: Condensed Matter</i>. 2008;20(45). doi:<a href=\"https://doi.org/10.1088/0953-8984/20/45/454210\">10.1088/0953-8984/20/45/454210</a>"},"intvolume":"        20","publication_status":"published","publication_identifier":{"issn":["0953-8984","1361-648X"]},"article_number":"454210","article_type":"original","_id":"4557","user_id":"49428","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"status":"public","type":"journal_article"},{"citation":{"apa":"Meier, C., Lüttjohann, S., Offer, M., Wiggers, H., &#38; Lorke, A. (2008). Silicon Nanoparticles: Excitonic Fine Structure and Oscillator Strength. In <i>Advances in Solid State Physics</i> (pp. 79–90). Berlin, Heidelberg: Springer Berlin Heidelberg. <a href=\"https://doi.org/10.1007/978-3-540-85859-1_7\">https://doi.org/10.1007/978-3-540-85859-1_7</a>","mla":"Meier, Cedrik, et al. “Silicon Nanoparticles: Excitonic Fine Structure and Oscillator Strength.” <i>Advances in Solid State Physics</i>, Springer Berlin Heidelberg, 2008, pp. 79–90, doi:<a href=\"https://doi.org/10.1007/978-3-540-85859-1_7\">10.1007/978-3-540-85859-1_7</a>.","bibtex":"@inbook{Meier_Lüttjohann_Offer_Wiggers_Lorke_2008, place={Berlin, Heidelberg}, title={Silicon Nanoparticles: Excitonic Fine Structure and Oscillator Strength}, DOI={<a href=\"https://doi.org/10.1007/978-3-540-85859-1_7\">10.1007/978-3-540-85859-1_7</a>}, booktitle={Advances in Solid State Physics}, publisher={Springer Berlin Heidelberg}, author={Meier, Cedrik and Lüttjohann, Stephan and Offer, Matthias and Wiggers, Hartmut and Lorke, Axel}, year={2008}, pages={79–90} }","short":"C. Meier, S. Lüttjohann, M. Offer, H. Wiggers, A. Lorke, in: Advances in Solid State Physics, Springer Berlin Heidelberg, Berlin, Heidelberg, 2008, pp. 79–90.","ieee":"C. Meier, S. Lüttjohann, M. Offer, H. Wiggers, and A. Lorke, “Silicon Nanoparticles: Excitonic Fine Structure and Oscillator Strength,” in <i>Advances in Solid State Physics</i>, Berlin, Heidelberg: Springer Berlin Heidelberg, 2008, pp. 79–90.","chicago":"Meier, Cedrik, Stephan Lüttjohann, Matthias Offer, Hartmut Wiggers, and Axel Lorke. “Silicon Nanoparticles: Excitonic Fine Structure and Oscillator Strength.” In <i>Advances in Solid State Physics</i>, 79–90. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. <a href=\"https://doi.org/10.1007/978-3-540-85859-1_7\">https://doi.org/10.1007/978-3-540-85859-1_7</a>.","ama":"Meier C, Lüttjohann S, Offer M, Wiggers H, Lorke A. Silicon Nanoparticles: Excitonic Fine Structure and Oscillator Strength. In: <i>Advances in Solid State Physics</i>. Berlin, Heidelberg: Springer Berlin Heidelberg; 2008:79-90. doi:<a href=\"https://doi.org/10.1007/978-3-540-85859-1_7\">10.1007/978-3-540-85859-1_7</a>"},"page":"79-90","place":"Berlin, Heidelberg","year":"2008","publication_status":"published","publication_identifier":{"isbn":["9783540858584","9783540858591"],"issn":["1438-4329","1617-5034"]},"doi":"10.1007/978-3-540-85859-1_7","title":"Silicon Nanoparticles: Excitonic Fine Structure and Oscillator Strength","date_created":"2019-02-04T14:48:51Z","author":[{"last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik","id":"20798","first_name":"Cedrik"},{"full_name":"Lüttjohann, Stephan","last_name":"Lüttjohann","first_name":"Stephan"},{"full_name":"Offer, Matthias","last_name":"Offer","first_name":"Matthias"},{"last_name":"Wiggers","full_name":"Wiggers, Hartmut","first_name":"Hartmut"},{"first_name":"Axel","full_name":"Lorke, Axel","last_name":"Lorke"}],"publisher":"Springer Berlin Heidelberg","date_updated":"2022-01-06T07:03:39Z","status":"public","type":"book_chapter","publication":"Advances in Solid State Physics","language":[{"iso":"eng"}],"user_id":"20798","department":[{"_id":"15"},{"_id":"35"},{"_id":"230"},{"_id":"287"}],"_id":"7500"},{"doi":"10.1063/1.2920439","title":"Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy","volume":92,"date_created":"2019-02-13T11:30:23Z","author":[{"first_name":"W.","full_name":"Lei, W.","last_name":"Lei"},{"first_name":"M.","last_name":"Offer","full_name":"Offer, M."},{"first_name":"A.","last_name":"Lorke","full_name":"Lorke, A."},{"full_name":"Notthoff, C.","last_name":"Notthoff","first_name":"C."},{"first_name":"Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier","full_name":"Meier, Cedrik","id":"20798"},{"first_name":"O.","full_name":"Wibbelhoff, O.","last_name":"Wibbelhoff"},{"first_name":"A. D.","last_name":"Wieck","full_name":"Wieck, A. D."}],"date_updated":"2022-01-06T07:03:43Z","publisher":"AIP Publishing","intvolume":"        92","citation":{"mla":"Lei, W., et al. “Probing the Band Structure of InAs∕GaAs Quantum Dots by Capacitance-Voltage and Photoluminescence Spectroscopy.” <i>Applied Physics Letters</i>, vol. 92, no. 19, 193111, AIP Publishing, 2008, doi:<a href=\"https://doi.org/10.1063/1.2920439\">10.1063/1.2920439</a>.","short":"W. Lei, M. Offer, A. Lorke, C. Notthoff, C. Meier, O. Wibbelhoff, A.D. Wieck, Applied Physics Letters 92 (2008).","bibtex":"@article{Lei_Offer_Lorke_Notthoff_Meier_Wibbelhoff_Wieck_2008, title={Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy}, volume={92}, DOI={<a href=\"https://doi.org/10.1063/1.2920439\">10.1063/1.2920439</a>}, number={19193111}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lei, W. and Offer, M. and Lorke, A. and Notthoff, C. and Meier, Cedrik and Wibbelhoff, O. and Wieck, A. D.}, year={2008} }","apa":"Lei, W., Offer, M., Lorke, A., Notthoff, C., Meier, C., Wibbelhoff, O., &#38; Wieck, A. D. (2008). Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy. <i>Applied Physics Letters</i>, <i>92</i>(19). <a href=\"https://doi.org/10.1063/1.2920439\">https://doi.org/10.1063/1.2920439</a>","ieee":"W. Lei <i>et al.</i>, “Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy,” <i>Applied Physics Letters</i>, vol. 92, no. 19, 2008.","chicago":"Lei, W., M. Offer, A. Lorke, C. Notthoff, Cedrik Meier, O. Wibbelhoff, and A. D. Wieck. “Probing the Band Structure of InAs∕GaAs Quantum Dots by Capacitance-Voltage and Photoluminescence Spectroscopy.” <i>Applied Physics Letters</i> 92, no. 19 (2008). <a href=\"https://doi.org/10.1063/1.2920439\">https://doi.org/10.1063/1.2920439</a>.","ama":"Lei W, Offer M, Lorke A, et al. Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy. <i>Applied Physics Letters</i>. 2008;92(19). doi:<a href=\"https://doi.org/10.1063/1.2920439\">10.1063/1.2920439</a>"},"year":"2008","issue":"19","publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","language":[{"iso":"eng"}],"extern":"1","article_number":"193111","department":[{"_id":"15"}],"user_id":"20798","_id":"7640","status":"public","publication":"Applied Physics Letters","type":"journal_article"},{"publication_identifier":{"issn":["0370-1972","1521-3951"]},"publication_status":"published","page":"276-283","citation":{"ama":"Diaconescu D, Goldschmidt A, Reuter D, Wieck AD. Quantum Hall effect in long and in mobility adjusted GaAs/AlxGa1-xAs samples. <i>physica status solidi (b)</i>. 2008:276-283. doi:<a href=\"https://doi.org/10.1002/pssb.200743345\">10.1002/pssb.200743345</a>","chicago":"Diaconescu, D., A. Goldschmidt, Dirk Reuter, and A. D. Wieck. “Quantum Hall Effect in Long and in Mobility Adjusted GaAs/AlxGa1-XAs Samples.” <i>Physica Status Solidi (B)</i>, 2008, 276–83. <a href=\"https://doi.org/10.1002/pssb.200743345\">https://doi.org/10.1002/pssb.200743345</a>.","ieee":"D. Diaconescu, A. Goldschmidt, D. Reuter, and A. D. Wieck, “Quantum Hall effect in long and in mobility adjusted GaAs/AlxGa1-xAs samples,” <i>physica status solidi (b)</i>, pp. 276–283, 2008.","apa":"Diaconescu, D., Goldschmidt, A., Reuter, D., &#38; Wieck, A. D. (2008). Quantum Hall effect in long and in mobility adjusted GaAs/AlxGa1-xAs samples. <i>Physica Status Solidi (B)</i>, 276–283. <a href=\"https://doi.org/10.1002/pssb.200743345\">https://doi.org/10.1002/pssb.200743345</a>","bibtex":"@article{Diaconescu_Goldschmidt_Reuter_Wieck_2008, title={Quantum Hall effect in long and in mobility adjusted GaAs/AlxGa1-xAs samples}, DOI={<a href=\"https://doi.org/10.1002/pssb.200743345\">10.1002/pssb.200743345</a>}, journal={physica status solidi (b)}, author={Diaconescu, D. and Goldschmidt, A. and Reuter, Dirk and Wieck, A. D.}, year={2008}, pages={276–283} }","short":"D. Diaconescu, A. Goldschmidt, D. Reuter, A.D. Wieck, Physica Status Solidi (B) (2008) 276–283.","mla":"Diaconescu, D., et al. “Quantum Hall Effect in Long and in Mobility Adjusted GaAs/AlxGa1-XAs Samples.” <i>Physica Status Solidi (B)</i>, 2008, pp. 276–83, doi:<a href=\"https://doi.org/10.1002/pssb.200743345\">10.1002/pssb.200743345</a>."},"year":"2008","date_created":"2019-03-26T09:09:51Z","author":[{"first_name":"D.","last_name":"Diaconescu","full_name":"Diaconescu, D."},{"first_name":"A.","last_name":"Goldschmidt","full_name":"Goldschmidt, A."},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"first_name":"A. D.","last_name":"Wieck","full_name":"Wieck, A. 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Kaiser, S. Kohler, P. Hänggi, M. Malecha, J. Ebbecke, A. Wixforth, H.W. Schumacher, B. Kästner, D. Reuter, A.D. Wieck, Journal of Physics: Condensed Matter (2008).","mla":"Kaiser, F. J., et al. “Theoretical and Experimental Investigations of Coulomb Blockade in Coupled Quantum Dot Systems.” <i>Journal of Physics: Condensed Matter</i>, 374108, 2008, doi:<a href=\"https://doi.org/10.1088/0953-8984/20/37/374108\">10.1088/0953-8984/20/37/374108</a>.","apa":"Kaiser, F. J., Kohler, S., Hänggi, P., Malecha, M., Ebbecke, J., Wixforth, A., … Wieck, A. D. (2008). 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Wieck, M. Bayer, Physical Review B (2008).","bibtex":"@article{Hernandez_Greilich_Brito_Wiemann_Yakovlev_Reuter_Wieck_Bayer_2008, title={Temperature-induced spin-coherence dissipation in quantum dots}, DOI={<a href=\"https://doi.org/10.1103/physrevb.78.041303\">10.1103/physrevb.78.041303</a>}, journal={Physical Review B}, author={Hernandez, F. G. G. and Greilich, A. and Brito, F. and Wiemann, M. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Bayer, M.}, year={2008} }","ieee":"F. G. G. Hernandez <i>et al.</i>, “Temperature-induced spin-coherence dissipation in quantum dots,” <i>Physical Review B</i>, 2008.","chicago":"Hernandez, F. G. G., A. Greilich, F. Brito, M. Wiemann, D. R. Yakovlev, Dirk Reuter, A. D. Wieck, and M. Bayer. “Temperature-Induced Spin-Coherence Dissipation in Quantum Dots.” <i>Physical Review B</i>, 2008. <a href=\"https://doi.org/10.1103/physrevb.78.041303\">https://doi.org/10.1103/physrevb.78.041303</a>.","ama":"Hernandez FGG, Greilich A, Brito F, et al. 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Quantum dot as thermal rectifier. <i>New Journal of Physics</i>. <a href=\"https://doi.org/10.1088/1367-2630/10/8/083016\">https://doi.org/10.1088/1367-2630/10/8/083016</a>","mla":"Scheibner, R., et al. “Quantum Dot as Thermal Rectifier.” <i>New Journal of Physics</i>, 083016, 2008, doi:<a href=\"https://doi.org/10.1088/1367-2630/10/8/083016\">10.1088/1367-2630/10/8/083016</a>.","bibtex":"@article{Scheibner_König_Reuter_Wieck_Gould_Buhmann_Molenkamp_2008, title={Quantum dot as thermal rectifier}, DOI={<a href=\"https://doi.org/10.1088/1367-2630/10/8/083016\">10.1088/1367-2630/10/8/083016</a>}, number={083016}, journal={New Journal of Physics}, author={Scheibner, R and König, M and Reuter, Dirk and Wieck, A D and Gould, C and Buhmann, H and Molenkamp, L W}, year={2008} }","short":"R. Scheibner, M. König, D. Reuter, A.D. Wieck, C. Gould, H. Buhmann, L.W. Molenkamp, New Journal of Physics (2008)."}},{"issue":"8","year":"2008","publisher":"American Physical Society (APS)","date_created":"2018-08-28T10:21:47Z","title":"Phonon-assisted tunneling between singlet states in two-electron quantum dot molecules","publication":"Physical Review B","abstract":[{"lang":"eng","text":"We study phonon-assisted electron tunneling in semiconductor quantum dot molecules. In particular, singletsinglet\r\nrelaxation in a two-electron-doped structure is considered. The influence of Coulomb interaction is\r\ndiscussed via comparison with a single-electron system. We find that the relaxation rate reaches similar values\r\nin the two cases but the Coulomb interaction shifts the maximum rates toward larger separations between the\r\ndots. The difference in electron-phonon interaction between deformation potential and piezoelectric coupling is\r\ninvestigated. We show that the phonon-induced tunneling between two-electron singlet states is a fast process,\r\ntaking place on the time scales of the order of a few tens of picoseconds."}],"file":[{"success":1,"relation":"main_file","content_type":"application/pdf","file_size":2536294,"file_id":"4188","file_name":"2008 Grodecka,Machnikowski,Förstner_Phonon-assisted tunneling between singlet states in two-electron quantum dot molecules.pdf","access_level":"closed","date_updated":"2018-08-28T10:22:35Z","date_created":"2018-08-28T10:22:35Z","creator":"hclaudia"}],"keyword":["tet_topic_qd"],"ddc":["530"],"language":[{"iso":"eng"}],"publication_identifier":{"issn":["1098-0121","1550-235X"]},"has_accepted_license":"1","publication_status":"published","intvolume":"        78","citation":{"apa":"Grodecka, A., Machnikowski, P., &#38; Förstner, J. (2008). Phonon-assisted tunneling between singlet states in two-electron quantum dot molecules. <i>Physical Review B</i>, <i>78</i>(8). <a href=\"https://doi.org/10.1103/physrevb.78.085302\">https://doi.org/10.1103/physrevb.78.085302</a>","bibtex":"@article{Grodecka_Machnikowski_Förstner_2008, title={Phonon-assisted tunneling between singlet states in two-electron quantum dot molecules}, volume={78}, DOI={<a href=\"https://doi.org/10.1103/physrevb.78.085302\">10.1103/physrevb.78.085302</a>}, number={8085302}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Grodecka, A. and Machnikowski, P. and Förstner, Jens}, year={2008} }","mla":"Grodecka, A., et al. “Phonon-Assisted Tunneling between Singlet States in Two-Electron Quantum Dot Molecules.” <i>Physical Review B</i>, vol. 78, no. 8, 085302, American Physical Society (APS), 2008, doi:<a href=\"https://doi.org/10.1103/physrevb.78.085302\">10.1103/physrevb.78.085302</a>.","short":"A. Grodecka, P. Machnikowski, J. Förstner, Physical Review B 78 (2008).","chicago":"Grodecka, A., P. Machnikowski, and Jens Förstner. “Phonon-Assisted Tunneling between Singlet States in Two-Electron Quantum Dot Molecules.” <i>Physical Review B</i> 78, no. 8 (2008). <a href=\"https://doi.org/10.1103/physrevb.78.085302\">https://doi.org/10.1103/physrevb.78.085302</a>.","ieee":"A. Grodecka, P. Machnikowski, and J. Förstner, “Phonon-assisted tunneling between singlet states in two-electron quantum dot molecules,” <i>Physical Review B</i>, vol. 78, no. 8, 2008.","ama":"Grodecka A, Machnikowski P, Förstner J. Phonon-assisted tunneling between singlet states in two-electron quantum dot molecules. <i>Physical Review B</i>. 2008;78(8). doi:<a href=\"https://doi.org/10.1103/physrevb.78.085302\">10.1103/physrevb.78.085302</a>"},"date_updated":"2022-01-06T07:00:31Z","volume":78,"author":[{"last_name":"Grodecka","full_name":"Grodecka, A.","first_name":"A."},{"first_name":"P.","last_name":"Machnikowski","full_name":"Machnikowski, P."},{"first_name":"Jens","orcid":"0000-0001-7059-9862","last_name":"Förstner","id":"158","full_name":"Förstner, Jens"}],"doi":"10.1103/physrevb.78.085302","type":"journal_article","status":"public","_id":"4187","department":[{"_id":"15"}],"user_id":"55706","article_number":"085302","article_type":"original","file_date_updated":"2018-08-28T10:22:35Z"},{"user_id":"158","department":[{"_id":"15"}],"_id":"4317","file_date_updated":"2018-08-30T09:46:20Z","article_type":"original","type":"journal_article","status":"public","author":[{"first_name":"Anna","full_name":"Grodecka, Anna","last_name":"Grodecka"},{"last_name":"Machnikowski","full_name":"Machnikowski, Paweł","first_name":"Paweł"},{"id":"158","full_name":"Förstner, Jens","orcid":"0000-0001-7059-9862","last_name":"Förstner","first_name":"Jens"}],"volume":6,"date_updated":"2022-01-06T07:00:54Z","doi":"10.1002/pssc.200880319","publication_status":"published","publication_identifier":{"issn":["1610-1634","1610-1642"]},"has_accepted_license":"1","citation":{"chicago":"Grodecka, Anna, Paweł Machnikowski, and Jens Förstner. “Theoretical Study of Phononassisted Singlet-Singlet Relaxation in Two-Electron Semiconductor Quantum Dot Molecules.” <i>Physica Status Solidi (C)</i> 6, no. 2 (2008): 474–78. <a href=\"https://doi.org/10.1002/pssc.200880319\">https://doi.org/10.1002/pssc.200880319</a>.","ieee":"A. Grodecka, P. Machnikowski, and J. Förstner, “Theoretical study of phononassisted singlet-singlet relaxation in two-electron semiconductor quantum dot molecules,” <i>physica status solidi (c)</i>, vol. 6, no. 2, pp. 474–478, 2008.","ama":"Grodecka A, Machnikowski P, Förstner J. Theoretical study of phononassisted singlet-singlet relaxation in two-electron semiconductor quantum dot molecules. <i>physica status solidi (c)</i>. 2008;6(2):474-478. doi:<a href=\"https://doi.org/10.1002/pssc.200880319\">10.1002/pssc.200880319</a>","mla":"Grodecka, Anna, et al. “Theoretical Study of Phononassisted Singlet-Singlet Relaxation in Two-Electron Semiconductor Quantum Dot Molecules.” <i>Physica Status Solidi (C)</i>, vol. 6, no. 2, Wiley, 2008, pp. 474–78, doi:<a href=\"https://doi.org/10.1002/pssc.200880319\">10.1002/pssc.200880319</a>.","bibtex":"@article{Grodecka_Machnikowski_Förstner_2008, title={Theoretical study of phononassisted singlet-singlet relaxation in two-electron semiconductor quantum dot molecules}, volume={6}, DOI={<a href=\"https://doi.org/10.1002/pssc.200880319\">10.1002/pssc.200880319</a>}, number={2}, journal={physica status solidi (c)}, publisher={Wiley}, author={Grodecka, Anna and Machnikowski, Paweł and Förstner, Jens}, year={2008}, pages={474–478} }","short":"A. Grodecka, P. Machnikowski, J. Förstner, Physica Status Solidi (C) 6 (2008) 474–478.","apa":"Grodecka, A., Machnikowski, P., &#38; Förstner, J. (2008). Theoretical study of phononassisted singlet-singlet relaxation in two-electron semiconductor quantum dot molecules. <i>Physica Status Solidi (C)</i>, <i>6</i>(2), 474–478. <a href=\"https://doi.org/10.1002/pssc.200880319\">https://doi.org/10.1002/pssc.200880319</a>"},"intvolume":"         6","page":"474-478","language":[{"iso":"eng"}],"ddc":["530"],"keyword":["tet_topic_qd"],"publication":"physica status solidi (c)","file":[{"date_updated":"2018-08-30T09:46:20Z","creator":"hclaudia","date_created":"2018-08-30T09:46:20Z","file_size":1103973,"access_level":"closed","file_id":"4318","file_name":"2009 Grodecka-Grad,Machnikowski,Förstner_Theoretical study of phonon-assisted singlet-singlet relaxation in two-electron semiconductor quantum dot molecules.pdf","content_type":"application/pdf","success":1,"relation":"main_file"}],"abstract":[{"text":"Phonon-assisted singlet-singlet relaxation in semiconductor quantum dot molecules is studied theoretically. Laterally coupled quantum dot structures doped with two electrons are considered. We take into account interaction with acoustic phonon modes via deformation potential and piezoelectric coupling. We show that piezoelectric mechanism for the considered system is of great importance and for some ranges of quantum dot molecule parameters is the dominant contribution to relaxation. It is shown that the phonon-assisted tunneling is much faster (down to ∼ 6 ps even at zero temperature) in comparison with other decoherence processes. The influence of Coulomb interaction is discussed and its consequences are indicated. We calculate the relaxation rates for GaAs quantum dot molecules and study the dependence on quantum dot size, distance and offset between the constituent quantum dots. In addition the temperature dependence of the tunneling rates is analyzed.","lang":"eng"}],"date_created":"2018-08-30T09:45:39Z","publisher":"Wiley","title":"Theoretical study of phononassisted singlet-singlet relaxation in two-electron semiconductor quantum dot molecules","issue":"2","year":"2008"}]