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Ehresmann, Applied Physics Letters 86 (2005).","bibtex":"@article{Höink_Sacher_Schmalhorst_Reiss_Engel_Junk_Ehresmann_2005, title={Postannealing of magnetic tunnel junctions with ion-bombardment-modified exchange bias}, volume={86}, DOI={<a href=\"https://doi.org/10.1063/1.1899771\">10.1063/1.1899771</a>}, number={15152102}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Höink, V. and Sacher, Marc and Schmalhorst, J. and Reiss, G. and Engel, D. and Junk, D. and Ehresmann, A.}, year={2005} }","apa":"Höink, V., Sacher, M., Schmalhorst, J., Reiss, G., Engel, D., Junk, D., &#38; Ehresmann, A. (2005). Postannealing of magnetic tunnel junctions with ion-bombardment-modified exchange bias. <i>Applied Physics Letters</i>, <i>86</i>(15), Article 152102. <a href=\"https://doi.org/10.1063/1.1899771\">https://doi.org/10.1063/1.1899771</a>"},"intvolume":"        86","keyword":["Physics and Astronomy (miscellaneous)"],"language":[{"iso":"eng"}],"publication":"Applied Physics Letters","publisher":"AIP Publishing","date_created":"2022-01-31T10:21:57Z","title":"Postannealing of magnetic tunnel junctions with ion-bombardment-modified exchange bias","issue":"15","year":"2005"},{"keyword":["General Physics and Astronomy"],"language":[{"iso":"eng"}],"publication":"Journal of Applied Physics","title":"X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions","publisher":"AIP Publishing","date_created":"2022-01-31T10:20:49Z","year":"2005","issue":"12","article_number":"123711","extern":"1","_id":"29689","department":[{"_id":"15"}],"user_id":"26883","status":"public","type":"journal_article","doi":"10.1063/1.1939086","date_updated":"2024-04-23T12:17:13Z","volume":97,"author":[{"full_name":"Schmalhorst, J.","last_name":"Schmalhorst","first_name":"J."},{"first_name":"Marc","id":"26883","full_name":"Sacher, Marc","orcid":"0000-0001-6217-336X","last_name":"Sacher"},{"last_name":"Thomas","full_name":"Thomas, A.","first_name":"A."},{"first_name":"H.","full_name":"Brückl, H.","last_name":"Brückl"},{"first_name":"G.","last_name":"Reiss","full_name":"Reiss, G."},{"full_name":"Starke, K.","last_name":"Starke","first_name":"K."}],"intvolume":"        97","citation":{"mla":"Schmalhorst, J., et al. “X-Ray Absorption and Magnetic Circular Dichroism Studies of Annealed Magnetic Tunnel Junctions.” <i>Journal of Applied Physics</i>, vol. 97, no. 12, 123711, AIP Publishing, 2005, doi:<a href=\"https://doi.org/10.1063/1.1939086\">10.1063/1.1939086</a>.","short":"J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, K. Starke, Journal of Applied Physics 97 (2005).","bibtex":"@article{Schmalhorst_Sacher_Thomas_Brückl_Reiss_Starke_2005, title={X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions}, volume={97}, DOI={<a href=\"https://doi.org/10.1063/1.1939086\">10.1063/1.1939086</a>}, number={12123711}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Schmalhorst, J. and Sacher, Marc and Thomas, A. and Brückl, H. and Reiss, G. and Starke, K.}, year={2005} }","apa":"Schmalhorst, J., Sacher, M., Thomas, A., Brückl, H., Reiss, G., &#38; Starke, K. (2005). X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions. <i>Journal of Applied Physics</i>, <i>97</i>(12), Article 123711. <a href=\"https://doi.org/10.1063/1.1939086\">https://doi.org/10.1063/1.1939086</a>","ieee":"J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke, “X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions,” <i>Journal of Applied Physics</i>, vol. 97, no. 12, Art. no. 123711, 2005, doi: <a href=\"https://doi.org/10.1063/1.1939086\">10.1063/1.1939086</a>.","chicago":"Schmalhorst, J., Marc Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke. “X-Ray Absorption and Magnetic Circular Dichroism Studies of Annealed Magnetic Tunnel Junctions.” <i>Journal of Applied Physics</i> 97, no. 12 (2005). <a href=\"https://doi.org/10.1063/1.1939086\">https://doi.org/10.1063/1.1939086</a>.","ama":"Schmalhorst J, Sacher M, Thomas A, Brückl H, Reiss G, Starke K. X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions. <i>Journal of Applied Physics</i>. 2005;97(12). doi:<a href=\"https://doi.org/10.1063/1.1939086\">10.1063/1.1939086</a>"},"publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published"},{"publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"issue":"12","year":"2005","citation":{"apa":"Schmalhorst, J., Sacher, M., Thomas, A., Brückl, H., Reiss, G., &#38; Starke, K. (2005). X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions. <i>Journal of Applied Physics</i>, <i>97</i>(12), Article 123711. <a href=\"https://doi.org/10.1063/1.1939086\">https://doi.org/10.1063/1.1939086</a>","mla":"Schmalhorst, J., et al. “X-Ray Absorption and Magnetic Circular Dichroism Studies of Annealed Magnetic Tunnel Junctions.” <i>Journal of Applied Physics</i>, vol. 97, no. 12, 123711, AIP Publishing, 2005, doi:<a href=\"https://doi.org/10.1063/1.1939086\">10.1063/1.1939086</a>.","bibtex":"@article{Schmalhorst_Sacher_Thomas_Brückl_Reiss_Starke_2005, title={X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions}, volume={97}, DOI={<a href=\"https://doi.org/10.1063/1.1939086\">10.1063/1.1939086</a>}, number={12123711}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Schmalhorst, J. and Sacher, Marc and Thomas, A. and Brückl, H. and Reiss, G. and Starke, K.}, year={2005} }","short":"J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, K. Starke, Journal of Applied Physics 97 (2005).","chicago":"Schmalhorst, J., Marc Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke. “X-Ray Absorption and Magnetic Circular Dichroism Studies of Annealed Magnetic Tunnel Junctions.” <i>Journal of Applied Physics</i> 97, no. 12 (2005). <a href=\"https://doi.org/10.1063/1.1939086\">https://doi.org/10.1063/1.1939086</a>.","ieee":"J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke, “X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions,” <i>Journal of Applied Physics</i>, vol. 97, no. 12, Art. no. 123711, 2005, doi: <a href=\"https://doi.org/10.1063/1.1939086\">10.1063/1.1939086</a>.","ama":"Schmalhorst J, Sacher M, Thomas A, Brückl H, Reiss G, Starke K. X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions. <i>Journal of Applied Physics</i>. 2005;97(12). doi:<a href=\"https://doi.org/10.1063/1.1939086\">10.1063/1.1939086</a>"},"intvolume":"        97","date_updated":"2024-04-23T12:17:37Z","publisher":"AIP Publishing","author":[{"first_name":"J.","full_name":"Schmalhorst, J.","last_name":"Schmalhorst"},{"first_name":"Marc","orcid":"0000-0001-6217-336X","last_name":"Sacher","id":"26883","full_name":"Sacher, Marc"},{"first_name":"A.","full_name":"Thomas, A.","last_name":"Thomas"},{"first_name":"H.","last_name":"Brückl","full_name":"Brückl, H."},{"last_name":"Reiss","full_name":"Reiss, G.","first_name":"G."},{"full_name":"Starke, K.","last_name":"Starke","first_name":"K."}],"date_created":"2022-01-31T10:19:13Z","volume":97,"title":"X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions","doi":"10.1063/1.1939086","type":"journal_article","publication":"Journal of Applied Physics","status":"public","_id":"29688","user_id":"26883","department":[{"_id":"15"}],"article_number":"123711","keyword":["General Physics and Astronomy"],"extern":"1","language":[{"iso":"eng"}]},{"intvolume":"        98","citation":{"short":"M. Sacher, J. Sauerwald, J. Schmalhorst, G. Reiss, Journal of Applied Physics 98 (2005).","mla":"Sacher, Marc, et al. “Influence of Noble-Gas Ion Irradiation on Alumina Barrier of Magnetic Tunnel Junctions.” <i>Journal of Applied Physics</i>, vol. 98, no. 10, 103532, AIP Publishing, 2005, doi:<a href=\"https://doi.org/10.1063/1.2134883\">10.1063/1.2134883</a>.","bibtex":"@article{Sacher_Sauerwald_Schmalhorst_Reiss_2005, title={Influence of noble-gas ion irradiation on alumina barrier of magnetic tunnel junctions}, volume={98}, DOI={<a href=\"https://doi.org/10.1063/1.2134883\">10.1063/1.2134883</a>}, number={10103532}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Sacher, Marc and Sauerwald, J. and Schmalhorst, J. and Reiss, G.}, year={2005} }","apa":"Sacher, M., Sauerwald, J., Schmalhorst, J., &#38; Reiss, G. (2005). Influence of noble-gas ion irradiation on alumina barrier of magnetic tunnel junctions. <i>Journal of Applied Physics</i>, <i>98</i>(10), Article 103532. <a href=\"https://doi.org/10.1063/1.2134883\">https://doi.org/10.1063/1.2134883</a>","ama":"Sacher M, Sauerwald J, Schmalhorst J, Reiss G. Influence of noble-gas ion irradiation on alumina barrier of magnetic tunnel junctions. <i>Journal of Applied Physics</i>. 2005;98(10). doi:<a href=\"https://doi.org/10.1063/1.2134883\">10.1063/1.2134883</a>","chicago":"Sacher, Marc, J. Sauerwald, J. Schmalhorst, and G. Reiss. “Influence of Noble-Gas Ion Irradiation on Alumina Barrier of Magnetic Tunnel Junctions.” <i>Journal of Applied Physics</i> 98, no. 10 (2005). <a href=\"https://doi.org/10.1063/1.2134883\">https://doi.org/10.1063/1.2134883</a>.","ieee":"M. Sacher, J. Sauerwald, J. Schmalhorst, and G. Reiss, “Influence of noble-gas ion irradiation on alumina barrier of magnetic tunnel junctions,” <i>Journal of Applied Physics</i>, vol. 98, no. 10, Art. no. 103532, 2005, doi: <a href=\"https://doi.org/10.1063/1.2134883\">10.1063/1.2134883</a>."},"year":"2005","issue":"10","publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","doi":"10.1063/1.2134883","title":"Influence of noble-gas ion irradiation on alumina barrier of magnetic tunnel junctions","volume":98,"author":[{"orcid":"0000-0001-6217-336X","last_name":"Sacher","full_name":"Sacher, Marc","id":"26883","first_name":"Marc"},{"last_name":"Sauerwald","full_name":"Sauerwald, J.","first_name":"J."},{"first_name":"J.","full_name":"Schmalhorst, J.","last_name":"Schmalhorst"},{"last_name":"Reiss","full_name":"Reiss, G.","first_name":"G."}],"date_created":"2022-01-31T10:18:33Z","publisher":"AIP Publishing","date_updated":"2024-04-23T12:17:22Z","status":"public","publication":"Journal of Applied Physics","type":"journal_article","extern":"1","language":[{"iso":"eng"}],"keyword":["General Physics and Astronomy"],"article_number":"103532","department":[{"_id":"15"}],"user_id":"26883","_id":"29687"},{"publication":"Förderung des wissenschaftlichen Nachwuchses","type":"book_chapter","editor":[{"full_name":"Hartinger, Andreas ","last_name":"Hartinger","first_name":"Andreas "},{"first_name":"Joachim","last_name":"Kahlert","full_name":"Kahlert, Joachim"}],"status":"public","_id":"40475","department":[{"_id":"588"}],"user_id":"67302","language":[{"iso":"ger"}],"publication_status":"published","year":"2005","place":"Bad Heilbrunn/Obb.","page":"219-234","citation":{"ama":"Tenberge C. Zur Förderung der Persönlichkeitsentwicklung in handlungsintensiven Lernformen im naturwissenschaftlich-technischen Sachunterricht. . In: Hartinger A, Kahlert J, eds. <i>Förderung des wissenschaftlichen Nachwuchses</i>. ; 2005:219-234.","chicago":"Tenberge, Claudia. “Zur Förderung der Persönlichkeitsentwicklung in handlungsintensiven Lernformen im naturwissenschaftlich-technischen Sachunterricht. .” In <i>Förderung des wissenschaftlichen Nachwuchses</i>, edited by Andreas  Hartinger and Joachim Kahlert, 219–34. Bad Heilbrunn/Obb., 2005.","ieee":"C. Tenberge, “Zur Förderung der Persönlichkeitsentwicklung in handlungsintensiven Lernformen im naturwissenschaftlich-technischen Sachunterricht. ,” in <i>Förderung des wissenschaftlichen Nachwuchses</i>, A. Hartinger and J. Kahlert, Eds. Bad Heilbrunn/Obb., 2005, pp. 219–234.","apa":"Tenberge, C. (2005). Zur Förderung der Persönlichkeitsentwicklung in handlungsintensiven Lernformen im naturwissenschaftlich-technischen Sachunterricht. . In A. Hartinger &#38; J. Kahlert (Eds.), <i>Förderung des wissenschaftlichen Nachwuchses</i> (pp. 219–234).","bibtex":"@inbook{Tenberge_2005, place={Bad Heilbrunn/Obb.}, title={Zur Förderung der Persönlichkeitsentwicklung in handlungsintensiven Lernformen im naturwissenschaftlich-technischen Sachunterricht. }, booktitle={Förderung des wissenschaftlichen Nachwuchses}, author={Tenberge, Claudia}, editor={Hartinger, Andreas  and Kahlert, Joachim}, year={2005}, pages={219–234} }","short":"C. Tenberge, in: A. Hartinger, J. Kahlert (Eds.), Förderung des wissenschaftlichen Nachwuchses, Bad Heilbrunn/Obb., 2005, pp. 219–234.","mla":"Tenberge, Claudia. “Zur Förderung der Persönlichkeitsentwicklung in handlungsintensiven Lernformen im naturwissenschaftlich-technischen Sachunterricht. .” <i>Förderung des wissenschaftlichen Nachwuchses</i>, edited by Andreas  Hartinger and Joachim Kahlert, 2005, pp. 219–34."},"date_updated":"2023-01-27T08:54:25Z","author":[{"last_name":"Tenberge","id":"67302","full_name":"Tenberge, Claudia","first_name":"Claudia"}],"date_created":"2023-01-27T08:30:44Z","title":"Zur Förderung der Persönlichkeitsentwicklung in handlungsintensiven Lernformen im naturwissenschaftlich-technischen Sachunterricht. "},{"status":"public","type":"journal_article","article_number":"081903","extern":"1","_id":"43272","user_id":"49063","department":[{"_id":"293"}],"citation":{"bibtex":"@article{Schlichenmaier_Grüning_Thränhardt_Klar_Kunert_Volz_Stolz_Heimbrodt_Meier_Koch_2005, title={Type I-type II transition in InGaAs–GaNAs heterostructures}, volume={86}, DOI={<a href=\"https://doi.org/American Institute of Physics\">American Institute of Physics</a>}, number={8081903}, journal={Applied Physics Letters}, publisher={American Institute of Physics}, author={Schlichenmaier, C. and Grüning, H. and Thränhardt, A. and Klar, P.J. and Kunert, B. and Volz, K. and Stolz, W. and Heimbrodt, W. and Meier, Torsten and Koch, S.W.}, year={2005} }","mla":"Schlichenmaier, C., et al. “Type I-Type II Transition in InGaAs–GaNAs Heterostructures.” <i>Applied Physics Letters</i>, vol. 86, no. 8, 081903, American Institute of Physics, 2005, doi:<a href=\"https://doi.org/American Institute of Physics\">American Institute of Physics</a>.","short":"C. Schlichenmaier, H. Grüning, A. Thränhardt, P.J. Klar, B. Kunert, K. Volz, W. Stolz, W. Heimbrodt, T. Meier, S.W. Koch, Applied Physics Letters 86 (2005).","apa":"Schlichenmaier, C., Grüning, H., Thränhardt, A., Klar, P. J., Kunert, B., Volz, K., Stolz, W., Heimbrodt, W., Meier, T., &#38; Koch, S. W. (2005). Type I-type II transition in InGaAs–GaNAs heterostructures. <i>Applied Physics Letters</i>, <i>86</i>(8), Article 081903. <a href=\"https://doi.org/American Institute of Physics\">https://doi.org/American Institute of Physics</a>","ama":"Schlichenmaier C, Grüning H, Thränhardt A, et al. Type I-type II transition in InGaAs–GaNAs heterostructures. <i>Applied Physics Letters</i>. 2005;86(8). doi:<a href=\"https://doi.org/American Institute of Physics\">American Institute of Physics</a>","ieee":"C. Schlichenmaier <i>et al.</i>, “Type I-type II transition in InGaAs–GaNAs heterostructures,” <i>Applied Physics Letters</i>, vol. 86, no. 8, Art. no. 081903, 2005, doi: <a href=\"https://doi.org/American Institute of Physics\">American Institute of Physics</a>.","chicago":"Schlichenmaier, C., H. Grüning, A. Thränhardt, P.J. Klar, B. Kunert, K. Volz, W. Stolz, W. Heimbrodt, Torsten Meier, and S.W. Koch. “Type I-Type II Transition in InGaAs–GaNAs Heterostructures.” <i>Applied Physics Letters</i> 86, no. 8 (2005). <a href=\"https://doi.org/American Institute of Physics\">https://doi.org/American Institute of Physics</a>."},"intvolume":"        86","publication_status":"published","main_file_link":[{"url":"https://aip.scitation.org/doi/abs/10.1063/1.1870132"}],"doi":"American Institute of Physics","date_updated":"2023-04-01T23:04:46Z","author":[{"last_name":"Schlichenmaier","full_name":"Schlichenmaier, C.","first_name":"C."},{"full_name":"Grüning, H.","last_name":"Grüning","first_name":"H."},{"first_name":"A.","last_name":"Thränhardt","full_name":"Thränhardt, A."},{"first_name":"P.J.","full_name":"Klar, P.J.","last_name":"Klar"},{"first_name":"B.","last_name":"Kunert","full_name":"Kunert, B."},{"full_name":"Volz, K.","last_name":"Volz","first_name":"K."},{"full_name":"Stolz, W.","last_name":"Stolz","first_name":"W."},{"full_name":"Heimbrodt, W.","last_name":"Heimbrodt","first_name":"W."},{"full_name":"Meier, Torsten","id":"344","orcid":"0000-0001-8864-2072","last_name":"Meier","first_name":"Torsten"},{"last_name":"Koch","full_name":"Koch, S.W.","first_name":"S.W."}],"volume":86,"abstract":[{"text":"Optical interband transitions in a series of In0.23Ga0.77As–GaN𝑥As1−𝑥 quantum well samples are investigated. For changing nitrogen content, a type I-type II transition is identified by a detailed analysis of photoluminescence and photoreflectance spectra. Experimental results are compared systematically with spectra calculated by a microscopic theory. A valence band offset parameter of (1.5±0.5)eV is extracted for this heterostructure system.This work was supported by the Deutsche Forschungsgemeinschaft (Research Group on Metastable Compound Semiconductors and Heterostructures), by AFOSR (F49620-02-1-0380) and the Max-Planck Research Prize of the Max-Planck Society and Humboldt Foundation. We thank Stanko Tomić (Daresbury Laboratory) for fruitful discussions.\r\n","lang":"eng"}],"publication":"Applied Physics Letters","language":[{"iso":"eng"}],"year":"2005","issue":"8","title":"Type I-type II transition in InGaAs–GaNAs heterostructures","publisher":"American Institute of Physics","date_created":"2023-04-01T23:04:44Z"},{"main_file_link":[{"url":"https://journals.aps.org/prb/abstract/10.1103/PhysRevB.71.035346"}],"doi":"10.1103/PhysRevB.71.035346","title":" Spatially inhomogeneous optical gain in semiconductor photonic-crystal structures","author":[{"full_name":"Reichelt, Matthias","id":"138","last_name":"Reichelt","first_name":"Matthias"},{"first_name":"B.","last_name":"Pasenow","full_name":"Pasenow, B."},{"first_name":"Torsten","full_name":"Meier, Torsten","id":"344","last_name":"Meier","orcid":"0000-0001-8864-2072"},{"first_name":"T.","last_name":"Stroucken","full_name":"Stroucken, T."},{"full_name":"Koch, S.W.","last_name":"Koch","first_name":"S.W."}],"date_created":"2023-04-01T23:00:22Z","volume":71,"publisher":"035346","date_updated":"2023-04-01T23:00:25Z","citation":{"ama":"Reichelt M, Pasenow B, Meier T, Stroucken T, Koch SW.  Spatially inhomogeneous optical gain in semiconductor photonic-crystal structures. <i>Physical Review B</i>. 2005;71(3). doi:<a href=\"https://doi.org/10.1103/PhysRevB.71.035346\">10.1103/PhysRevB.71.035346</a>","ieee":"M. Reichelt, B. Pasenow, T. Meier, T. Stroucken, and S. W. Koch, “ Spatially inhomogeneous optical gain in semiconductor photonic-crystal structures,” <i>Physical Review B</i>, vol. 71, no. 3, Art. no. 035346, 2005, doi: <a href=\"https://doi.org/10.1103/PhysRevB.71.035346\">10.1103/PhysRevB.71.035346</a>.","chicago":"Reichelt, Matthias, B. Pasenow, Torsten Meier, T. Stroucken, and S.W. Koch. “ Spatially Inhomogeneous Optical Gain in Semiconductor Photonic-Crystal Structures.” <i>Physical Review B</i> 71, no. 3 (2005). <a href=\"https://doi.org/10.1103/PhysRevB.71.035346\">https://doi.org/10.1103/PhysRevB.71.035346</a>.","apa":"Reichelt, M., Pasenow, B., Meier, T., Stroucken, T., &#38; Koch, S. W. (2005).  Spatially inhomogeneous optical gain in semiconductor photonic-crystal structures. <i>Physical Review B</i>, <i>71</i>(3), Article 035346. <a href=\"https://doi.org/10.1103/PhysRevB.71.035346\">https://doi.org/10.1103/PhysRevB.71.035346</a>","bibtex":"@article{Reichelt_Pasenow_Meier_Stroucken_Koch_2005, title={ Spatially inhomogeneous optical gain in semiconductor photonic-crystal structures}, volume={71}, DOI={<a href=\"https://doi.org/10.1103/PhysRevB.71.035346\">10.1103/PhysRevB.71.035346</a>}, number={3035346}, journal={Physical Review B}, publisher={035346}, author={Reichelt, Matthias and Pasenow, B. and Meier, Torsten and Stroucken, T. and Koch, S.W.}, year={2005} }","mla":"Reichelt, Matthias, et al. “ Spatially Inhomogeneous Optical Gain in Semiconductor Photonic-Crystal Structures.” <i>Physical Review B</i>, vol. 71, no. 3, 035346, 035346, 2005, doi:<a href=\"https://doi.org/10.1103/PhysRevB.71.035346\">10.1103/PhysRevB.71.035346</a>.","short":"M. Reichelt, B. Pasenow, T. Meier, T. Stroucken, S.W. Koch, Physical Review B 71 (2005)."},"intvolume":"        71","year":"2005","issue":"3","publication_status":"published","extern":"1","language":[{"iso":"eng"}],"article_number":"035346","user_id":"49063","department":[{"_id":"293"}],"_id":"43271","status":"public","abstract":[{"lang":"eng","text":"The optical and electronic properties of semiconductor heterostructures in the vicinity of photonic crystals are discussed. The theoretical approach provides a self-consistent solution of the dynamics of the electromagnetic field and the material excitations. Due to the influence of the structured dielectric environment on the Coulomb interaction, the exciton resonances and the quasiequilibrium carrier densities in the spatially homogeneous semiconductor become space dependent. It is demonstrated that these inhomogeneities lead to distinct modifications of the optical absorption and gain spectra. As an application, numerically calculated density-dependent optical spectra are analyzed for an array of semiconductor quantum wires which are close to a two-dimensional photonic crystal. The spatial inhomogeneities result in novel excitonic absorption features and modification of the optical gain in these structures."}],"type":"journal_article","publication":"Physical Review B"},{"type":"journal_article","publication":"Journal of the Optical Society of America B","abstract":[{"text":"The optical properties of semiconductor quantum wells embedded in one-dimensional photonic crystal structures are analyzed by a self-consistent solution of Maxwell’s equations and a microscopic many-body theory of the material excitations. For a field mode spectrally below the photonic band edge it is shown that the optical absorption and gain are enhanced, exceeding by more than 1 order of magnitude the values of a homogeneous medium. For the photonic crystal structure inside a microcavity the gain increases superlinearly with the number of wells and for more than five wells exceeds the gain of a corresponding vertical-cavity surface-emitting laser.","lang":"eng"}],"status":"public","_id":"23506","user_id":"49063","department":[{"_id":"15"},{"_id":"170"},{"_id":"293"}],"extern":"1","language":[{"iso":"eng"}],"publication_status":"published","publication_identifier":{"issn":["0740-3224","1520-8540"]},"issue":"9","year":"2005","citation":{"apa":"Pasenow, B., Reichelt, M., Stroucken, T., Meier, T., Koch, S. W., Zakharian, A. R., &#38; Moloney, J. V. (2005). Enhanced light-matter interaction in semiconductor heterostructures embedded in one-dimensional photonic crystals. <i>Journal of the Optical Society of America B</i>, <i>22</i>(9), 2039–2048. <a href=\"https://doi.org/10.1364/josab.22.002039\">https://doi.org/10.1364/josab.22.002039</a>","short":"B. Pasenow, M. Reichelt, T. Stroucken, T. Meier, S.W. Koch, A.R. Zakharian, J.V. Moloney, Journal of the Optical Society of America B 22 (2005) 2039–2048.","bibtex":"@article{Pasenow_Reichelt_Stroucken_Meier_Koch_Zakharian_Moloney_2005, title={Enhanced light-matter interaction in semiconductor heterostructures embedded in one-dimensional photonic crystals}, volume={22}, DOI={<a href=\"https://doi.org/10.1364/josab.22.002039\">10.1364/josab.22.002039</a>}, number={9}, journal={Journal of the Optical Society of America B}, author={Pasenow, Bernhard and Reichelt, Matthias and Stroucken, Tineke and Meier, Torsten and Koch, Stephan W. and Zakharian, Aramis R. and Moloney, Jerome V.}, year={2005}, pages={2039–2048} }","mla":"Pasenow, Bernhard, et al. “Enhanced Light-Matter Interaction in Semiconductor Heterostructures Embedded in One-Dimensional Photonic Crystals.” <i>Journal of the Optical Society of America B</i>, vol. 22, no. 9, 2005, pp. 2039–48, doi:<a href=\"https://doi.org/10.1364/josab.22.002039\">10.1364/josab.22.002039</a>.","ama":"Pasenow B, Reichelt M, Stroucken T, et al. Enhanced light-matter interaction in semiconductor heterostructures embedded in one-dimensional photonic crystals. <i>Journal of the Optical Society of America B</i>. 2005;22(9):2039-2048. doi:<a href=\"https://doi.org/10.1364/josab.22.002039\">10.1364/josab.22.002039</a>","chicago":"Pasenow, Bernhard, Matthias Reichelt, Tineke Stroucken, Torsten Meier, Stephan W. Koch, Aramis R. Zakharian, and Jerome V. Moloney. “Enhanced Light-Matter Interaction in Semiconductor Heterostructures Embedded in One-Dimensional Photonic Crystals.” <i>Journal of the Optical Society of America B</i> 22, no. 9 (2005): 2039–48. <a href=\"https://doi.org/10.1364/josab.22.002039\">https://doi.org/10.1364/josab.22.002039</a>.","ieee":"B. Pasenow <i>et al.</i>, “Enhanced light-matter interaction in semiconductor heterostructures embedded in one-dimensional photonic crystals,” <i>Journal of the Optical Society of America B</i>, vol. 22, no. 9, pp. 2039–2048, 2005, doi: <a href=\"https://doi.org/10.1364/josab.22.002039\">10.1364/josab.22.002039</a>."},"intvolume":"        22","page":"2039-2048","date_updated":"2023-04-24T06:02:06Z","date_created":"2021-08-24T09:28:32Z","author":[{"full_name":"Pasenow, Bernhard","last_name":"Pasenow","first_name":"Bernhard"},{"first_name":"Matthias","last_name":"Reichelt","full_name":"Reichelt, Matthias","id":"138"},{"last_name":"Stroucken","full_name":"Stroucken, Tineke","first_name":"Tineke"},{"id":"344","full_name":"Meier, Torsten","last_name":"Meier","orcid":"0000-0001-8864-2072","first_name":"Torsten"},{"full_name":"Koch, Stephan W.","last_name":"Koch","first_name":"Stephan W."},{"first_name":"Aramis R.","last_name":"Zakharian","full_name":"Zakharian, Aramis R."},{"last_name":"Moloney","full_name":"Moloney, Jerome V.","first_name":"Jerome V."}],"volume":22,"title":"Enhanced light-matter interaction in semiconductor heterostructures embedded in one-dimensional photonic crystals","doi":"10.1364/josab.22.002039"},{"extern":"1","_id":"23502","user_id":"49063","department":[{"_id":"15"},{"_id":"170"},{"_id":"293"}],"status":"public","type":"journal_article","doi":"10.1103/physrevb.71.195321","date_updated":"2023-04-24T06:07:42Z","author":[{"full_name":"Pasenow, B.","last_name":"Pasenow","first_name":"B."},{"first_name":"Matthias","id":"138","full_name":"Reichelt, Matthias","last_name":"Reichelt"},{"first_name":"T.","full_name":"Stroucken, T.","last_name":"Stroucken"},{"orcid":"0000-0001-8864-2072","last_name":"Meier","full_name":"Meier, Torsten","id":"344","first_name":"Torsten"},{"last_name":"Koch","full_name":"Koch, S. W.","first_name":"S. W."}],"volume":71,"citation":{"apa":"Pasenow, B., Reichelt, M., Stroucken, T., Meier, T., &#38; Koch, S. W. (2005). Excitonic wave packet dynamics in semiconductor photonic-crystal structures. <i>Physical Review B</i>, <i>71</i>(19), 195321. <a href=\"https://doi.org/10.1103/physrevb.71.195321\">https://doi.org/10.1103/physrevb.71.195321</a>","bibtex":"@article{Pasenow_Reichelt_Stroucken_Meier_Koch_2005, title={Excitonic wave packet dynamics in semiconductor photonic-crystal structures}, volume={71}, DOI={<a href=\"https://doi.org/10.1103/physrevb.71.195321\">10.1103/physrevb.71.195321</a>}, number={19}, journal={Physical Review B}, author={Pasenow, B. and Reichelt, Matthias and Stroucken, T. and Meier, Torsten and Koch, S. W.}, year={2005}, pages={195321} }","mla":"Pasenow, B., et al. “Excitonic Wave Packet Dynamics in Semiconductor Photonic-Crystal Structures.” <i>Physical Review B</i>, vol. 71, no. 19, 2005, p. 195321, doi:<a href=\"https://doi.org/10.1103/physrevb.71.195321\">10.1103/physrevb.71.195321</a>.","short":"B. Pasenow, M. Reichelt, T. Stroucken, T. Meier, S.W. Koch, Physical Review B 71 (2005) 195321.","ieee":"B. Pasenow, M. Reichelt, T. Stroucken, T. Meier, and S. W. Koch, “Excitonic wave packet dynamics in semiconductor photonic-crystal structures,” <i>Physical Review B</i>, vol. 71, no. 19, p. 195321, 2005, doi: <a href=\"https://doi.org/10.1103/physrevb.71.195321\">10.1103/physrevb.71.195321</a>.","chicago":"Pasenow, B., Matthias Reichelt, T. Stroucken, Torsten Meier, and S. W. Koch. “Excitonic Wave Packet Dynamics in Semiconductor Photonic-Crystal Structures.” <i>Physical Review B</i> 71, no. 19 (2005): 195321. <a href=\"https://doi.org/10.1103/physrevb.71.195321\">https://doi.org/10.1103/physrevb.71.195321</a>.","ama":"Pasenow B, Reichelt M, Stroucken T, Meier T, Koch SW. Excitonic wave packet dynamics in semiconductor photonic-crystal structures. <i>Physical Review B</i>. 2005;71(19):195321. doi:<a href=\"https://doi.org/10.1103/physrevb.71.195321\">10.1103/physrevb.71.195321</a>"},"intvolume":"        71","page":"195321","publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"language":[{"iso":"eng"}],"abstract":[{"text":"Significant aspects of the light–matter interaction can be strongly modified in suitably designed systems consisting of semiconductor nanostructures and dielectric photonic crystals. To analyze such effects, a microscopic theory is presented, which is capable of describing the optoelectronic properties of such hybrid systems via a self-consistent solution of the dynamics of the optical field and the photoexcitations of the material. The theory is applied to investigate the local excitonic resonances, which arise as a consequence of the modified Coulomb interaction in the vicinity of a structured dielectric medium. The excitation of a coherent superposition of the spatially inhomogeneous optical transitions induces an intricate wave packet dynamics. In the presence of dephasing and relaxation processes, the coherent oscillations are damped and the photoexcited carriers relax into spatially inhomogeneous quasi-equilibrium distributions.","lang":"eng"}],"publication":"Physical Review B","title":"Excitonic wave packet dynamics in semiconductor photonic-crystal structures","date_created":"2021-08-24T09:25:03Z","year":"2005","issue":"19"},{"title":"Microscopic Analysis of the Coherent Optical Generation and the Decay of Charge and Spin Currents in Semiconductor Heterostructures","doi":"10.1103/physrevlett.95.086606","date_updated":"2023-04-24T06:02:55Z","author":[{"first_name":"Huynh Thanh","last_name":"Duc","full_name":"Duc, Huynh Thanh"},{"first_name":"Torsten","orcid":"0000-0001-8864-2072","last_name":"Meier","full_name":"Meier, Torsten","id":"344"},{"last_name":"Koch","full_name":"Koch, S. W.","first_name":"S. W."}],"date_created":"2021-08-24T09:27:55Z","volume":95,"year":"2005","citation":{"ieee":"H. T. Duc, T. Meier, and S. W. Koch, “Microscopic Analysis of the Coherent Optical Generation and the Decay of Charge and Spin Currents in Semiconductor Heterostructures,” <i>Physical Review Letters</i>, vol. 95, no. 8, Art. no. 086606, 2005, doi: <a href=\"https://doi.org/10.1103/physrevlett.95.086606\">10.1103/physrevlett.95.086606</a>.","chicago":"Duc, Huynh Thanh, Torsten Meier, and S. W. Koch. “Microscopic Analysis of the Coherent Optical Generation and the Decay of Charge and Spin Currents in Semiconductor Heterostructures.” <i>Physical Review Letters</i> 95, no. 8 (2005). <a href=\"https://doi.org/10.1103/physrevlett.95.086606\">https://doi.org/10.1103/physrevlett.95.086606</a>.","ama":"Duc HT, Meier T, Koch SW. Microscopic Analysis of the Coherent Optical Generation and the Decay of Charge and Spin Currents in Semiconductor Heterostructures. <i>Physical Review Letters</i>. 2005;95(8). doi:<a href=\"https://doi.org/10.1103/physrevlett.95.086606\">10.1103/physrevlett.95.086606</a>","short":"H.T. Duc, T. Meier, S.W. Koch, Physical Review Letters 95 (2005).","bibtex":"@article{Duc_Meier_Koch_2005, title={Microscopic Analysis of the Coherent Optical Generation and the Decay of Charge and Spin Currents in Semiconductor Heterostructures}, volume={95}, DOI={<a href=\"https://doi.org/10.1103/physrevlett.95.086606\">10.1103/physrevlett.95.086606</a>}, number={8086606}, journal={Physical Review Letters}, author={Duc, Huynh Thanh and Meier, Torsten and Koch, S. W.}, year={2005} }","mla":"Duc, Huynh Thanh, et al. “Microscopic Analysis of the Coherent Optical Generation and the Decay of Charge and Spin Currents in Semiconductor Heterostructures.” <i>Physical Review Letters</i>, vol. 95, no. 8, 086606, 2005, doi:<a href=\"https://doi.org/10.1103/physrevlett.95.086606\">10.1103/physrevlett.95.086606</a>.","apa":"Duc, H. T., Meier, T., &#38; Koch, S. W. (2005). Microscopic Analysis of the Coherent Optical Generation and the Decay of Charge and Spin Currents in Semiconductor Heterostructures. <i>Physical Review Letters</i>, <i>95</i>(8), Article 086606. <a href=\"https://doi.org/10.1103/physrevlett.95.086606\">https://doi.org/10.1103/physrevlett.95.086606</a>"},"intvolume":"        95","publication_status":"published","publication_identifier":{"issn":["0031-9007","1079-7114"]},"issue":"8","article_number":"086606","extern":"1","language":[{"iso":"eng"}],"_id":"23504","user_id":"49063","department":[{"_id":"15"},{"_id":"170"},{"_id":"293"}],"abstract":[{"lang":"eng","text":"The coherent optical injection and temporal decay of spin and charge currents in semiconductor heterostructures is described microscopically, including excitonic effects, many-body Coulomb correlations, and the carrier LO-phonon coupling on the second-order Born-Markov level, as well as nonperturbative light-field-induced intraband and interband excitations. A nonmonotonic dependence of the currents on the intensities of the laser beams is predicted. Enhanced damping of the spin current relative to the charge current is obtained as a consequence of Coulomb scattering."}],"status":"public","type":"journal_article","publication":"Physical Review Letters"},{"department":[{"_id":"15"},{"_id":"170"},{"_id":"293"}],"user_id":"49063","_id":"23507","language":[{"iso":"eng"}],"extern":"1","article_number":"261109","publication":"Applied Physics Letters","type":"journal_article","status":"public","abstract":[{"text":"A microscopic model is used to analyze gain and loss properties of (GaIn)(NAs)∕GaAs quantum wells in the 1.3–1.55μm range, including Auger and radiative recombination. The calculations show that, as long as good material quality can be achieved, growing highly compressively strained samples is preferable due to their specific band structure properties. Optimum laser operation is possible slightly above a peak gain of 1000cm−1\r\n⁠.","lang":"eng"}],"volume":87,"date_created":"2021-08-24T09:29:41Z","author":[{"full_name":"Schlichenmaier, C.","last_name":"Schlichenmaier","first_name":"C."},{"first_name":"A.","full_name":"Thränhardt, A.","last_name":"Thränhardt"},{"last_name":"Meier","orcid":"0000-0001-8864-2072","id":"344","full_name":"Meier, Torsten","first_name":"Torsten"},{"first_name":"S. W.","full_name":"Koch, S. W.","last_name":"Koch"},{"first_name":"W. W.","last_name":"Chow","full_name":"Chow, W. W."},{"first_name":"J.","last_name":"Hader","full_name":"Hader, J."},{"last_name":"Moloney","full_name":"Moloney, J. V.","first_name":"J. V."}],"date_updated":"2023-04-24T06:00:23Z","doi":"10.1063/1.2149371","title":"Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range","issue":"26","publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","intvolume":"        87","citation":{"chicago":"Schlichenmaier, C., A. Thränhardt, Torsten Meier, S. W. Koch, W. W. Chow, J. Hader, and J. V. Moloney. “Gain and Carrier Losses of (GaIn)(NAs) Heterostructures in the 1300–1550 Nm Range.” <i>Applied Physics Letters</i> 87, no. 26 (2005). <a href=\"https://doi.org/10.1063/1.2149371\">https://doi.org/10.1063/1.2149371</a>.","ieee":"C. Schlichenmaier <i>et al.</i>, “Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range,” <i>Applied Physics Letters</i>, vol. 87, no. 26, Art. no. 261109, 2005, doi: <a href=\"https://doi.org/10.1063/1.2149371\">10.1063/1.2149371</a>.","ama":"Schlichenmaier C, Thränhardt A, Meier T, et al. Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range. <i>Applied Physics Letters</i>. 2005;87(26). doi:<a href=\"https://doi.org/10.1063/1.2149371\">10.1063/1.2149371</a>","bibtex":"@article{Schlichenmaier_Thränhardt_Meier_Koch_Chow_Hader_Moloney_2005, title={Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range}, volume={87}, DOI={<a href=\"https://doi.org/10.1063/1.2149371\">10.1063/1.2149371</a>}, number={26261109}, journal={Applied Physics Letters}, author={Schlichenmaier, C. and Thränhardt, A. and Meier, Torsten and Koch, S. W. and Chow, W. W. and Hader, J. and Moloney, J. V.}, year={2005} }","short":"C. Schlichenmaier, A. Thränhardt, T. Meier, S.W. Koch, W.W. Chow, J. Hader, J.V. Moloney, Applied Physics Letters 87 (2005).","mla":"Schlichenmaier, C., et al. “Gain and Carrier Losses of (GaIn)(NAs) Heterostructures in the 1300–1550 Nm Range.” <i>Applied Physics Letters</i>, vol. 87, no. 26, 261109, 2005, doi:<a href=\"https://doi.org/10.1063/1.2149371\">10.1063/1.2149371</a>.","apa":"Schlichenmaier, C., Thränhardt, A., Meier, T., Koch, S. W., Chow, W. W., Hader, J., &#38; Moloney, J. V. (2005). Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range. <i>Applied Physics Letters</i>, <i>87</i>(26), Article 261109. <a href=\"https://doi.org/10.1063/1.2149371\">https://doi.org/10.1063/1.2149371</a>"},"year":"2005"},{"year":"2005","page":"163-173","citation":{"apa":"Meier, T., &#38; Koch, S. W. (2005). COHERENT TRANSIENTS | Foundations of Coherent Transients in Semiconductors. In B. Guenther, L. Bayvel, &#38; D. G. Steel (Eds.), <i>Encyclopedia of Modern Optics</i> (pp. 163–173). Elsevier. <a href=\"https://doi.org/10.1016/B0-12-369395-0/00754-5\">https://doi.org/10.1016/B0-12-369395-0/00754-5</a>","short":"T. Meier, S.W. Koch, in: B. Guenther, L. Bayvel, D.G. Steel (Eds.), Encyclopedia of Modern Optics, Elsevier, 2005, pp. 163–173.","bibtex":"@inbook{Meier_Koch_2005, title={COHERENT TRANSIENTS | Foundations of Coherent Transients in Semiconductors}, DOI={<a href=\"https://doi.org/10.1016/B0-12-369395-0/00754-5\">10.1016/B0-12-369395-0/00754-5</a>}, booktitle={Encyclopedia of Modern Optics}, publisher={Elsevier}, author={Meier, Torsten and Koch, S.W.}, editor={Guenther, B. and Bayvel, L. and Steel, D.G.}, year={2005}, pages={163–173} }","mla":"Meier, Torsten, and S. W. Koch. “COHERENT TRANSIENTS | Foundations of Coherent Transients in Semiconductors.” <i>Encyclopedia of Modern Optics</i>, edited by B. Guenther et al., Elsevier, 2005, pp. 163–73, doi:<a href=\"https://doi.org/10.1016/B0-12-369395-0/00754-5\">10.1016/B0-12-369395-0/00754-5</a>.","ieee":"T. Meier and S. W. Koch, “COHERENT TRANSIENTS | Foundations of Coherent Transients in Semiconductors,” in <i>Encyclopedia of Modern Optics</i>, B. Guenther, L. Bayvel, and D. G. Steel, Eds. Elsevier, 2005, pp. 163–173.","chicago":"Meier, Torsten, and S.W. Koch. “COHERENT TRANSIENTS | Foundations of Coherent Transients in Semiconductors.” In <i>Encyclopedia of Modern Optics</i>, edited by B. Guenther, L. Bayvel, and D.G. Steel, 163–73. Elsevier, 2005. <a href=\"https://doi.org/10.1016/B0-12-369395-0/00754-5\">https://doi.org/10.1016/B0-12-369395-0/00754-5</a>.","ama":"Meier T, Koch SW. COHERENT TRANSIENTS | Foundations of Coherent Transients in Semiconductors. In: Guenther B, Bayvel L, Steel DG, eds. <i>Encyclopedia of Modern Optics</i>. Elsevier; 2005:163-173. doi:<a href=\"https://doi.org/10.1016/B0-12-369395-0/00754-5\">10.1016/B0-12-369395-0/00754-5</a>"},"publication_status":"published","title":"COHERENT TRANSIENTS | Foundations of Coherent Transients in Semiconductors","doi":"10.1016/B0-12-369395-0/00754-5","main_file_link":[{"url":"https://www.sciencedirect.com/science/article/pii/B0123693950007545?via%3Dihub"}],"date_updated":"2023-04-02T12:50:02Z","publisher":"Elsevier","author":[{"first_name":"Torsten","id":"344","full_name":"Meier, Torsten","orcid":"0000-0001-8864-2072","last_name":"Meier"},{"last_name":"Koch","full_name":"Koch, S.W.","first_name":"S.W."}],"date_created":"2023-04-01T23:28:01Z","editor":[{"last_name":"Guenther","full_name":"Guenther, B.","first_name":"B."},{"last_name":"Bayvel","full_name":"Bayvel, L.","first_name":"L."},{"full_name":"Steel, D.G.","last_name":"Steel","first_name":"D.G."}],"status":"public","publication":"Encyclopedia of Modern Optics","type":"book_chapter","language":[{"iso":"eng"}],"extern":"1","_id":"43275","department":[{"_id":"293"}],"user_id":"49063"},{"publication":" Quantum Electronics and Laser Science Conference","type":"conference","status":"public","abstract":[{"lang":"eng","text":"Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In0.23Ga0.77As/GaNxAs1−x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range."}],"department":[{"_id":"293"}],"user_id":"49063","_id":"44121","extern":"1","language":[{"iso":"eng"}],"article_number":"JTuC92","publication_identifier":{"isbn":["1-55752-770-9"]},"publication_status":"published","citation":{"ama":"Meier T, Schlichenmaier C, Thränhardt A, et al. Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5/spl mu/m range. In: <i> Quantum Electronics and Laser Science Conference</i>. Optical Society of America; 2005.","chicago":"Meier, Torsten, C. Schlichenmaier, A. Thränhardt, H. Grüning, Peter J. Klar, Wolfram Heimbrodt, S.W. Koch, Weng W. Chow, J. Hader, and Jerome V. Moloney. “Analysis of Dilute Nitride Semiconductor Laser Gain Materials in the 1.3-1.5/Spl Mu/m Range.” In <i> Quantum Electronics and Laser Science Conference</i>. Optical Society of America, 2005.","ieee":"T. Meier <i>et al.</i>, “Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5/spl mu/m range,” presented at the Quantum Electronics and Laser Science Conference 2005, Baltimore, Maryland United States, 2005.","apa":"Meier, T., Schlichenmaier, C., Thränhardt, A., Grüning, H., Klar, P. J., Heimbrodt, W., Koch, S. W., Chow, W. W., Hader, J., &#38; Moloney, J. V. (2005). Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5/spl mu/m range. <i> Quantum Electronics and Laser Science Conference</i>, Article JTuC92. Quantum Electronics and Laser Science Conference 2005, Baltimore, Maryland United States.","short":"T. Meier, C. Schlichenmaier, A. Thränhardt, H. Grüning, P.J. Klar, W. Heimbrodt, S.W. Koch, W.W. Chow, J. Hader, J.V. Moloney, in:  Quantum Electronics and Laser Science Conference, Optical Society of America, 2005.","bibtex":"@inproceedings{Meier_Schlichenmaier_Thränhardt_Grüning_Klar_Heimbrodt_Koch_Chow_Hader_Moloney_2005, title={Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5/spl mu/m range}, number={JTuC92}, booktitle={ Quantum Electronics and Laser Science Conference}, publisher={Optical Society of America}, author={Meier, Torsten and Schlichenmaier, C. and Thränhardt, A. and Grüning, H. and Klar, Peter J. and Heimbrodt, Wolfram and Koch, S.W. and Chow, Weng W. and Hader, J. and Moloney, Jerome V.}, year={2005} }","mla":"Meier, Torsten, et al. “Analysis of Dilute Nitride Semiconductor Laser Gain Materials in the 1.3-1.5/Spl Mu/m Range.” <i> Quantum Electronics and Laser Science Conference</i>, JTuC92, Optical Society of America, 2005."},"year":"2005","author":[{"first_name":"Torsten","id":"344","full_name":"Meier, Torsten","last_name":"Meier","orcid":"0000-0001-8864-2072"},{"first_name":"C.","full_name":"Schlichenmaier, C.","last_name":"Schlichenmaier"},{"last_name":"Thränhardt","full_name":"Thränhardt, A.","first_name":"A."},{"last_name":"Grüning","full_name":"Grüning, H.","first_name":"H."},{"first_name":"Peter J.","last_name":"Klar","full_name":"Klar, Peter J."},{"last_name":"Heimbrodt","full_name":"Heimbrodt, Wolfram","first_name":"Wolfram"},{"first_name":"S.W.","full_name":"Koch, S.W.","last_name":"Koch"},{"last_name":"Chow","full_name":"Chow, Weng W.","first_name":"Weng W."},{"first_name":"J.","last_name":"Hader","full_name":"Hader, J."},{"full_name":"Moloney, Jerome V.","last_name":"Moloney","first_name":"Jerome V."}],"date_created":"2023-04-24T06:11:47Z","publisher":"Optical Society of America","date_updated":"2023-04-24T06:11:49Z","conference":{"start_date":"2005-05-22","name":"Quantum Electronics and Laser Science Conference 2005","location":"Baltimore, Maryland United States","end_date":"2005-05-27"},"main_file_link":[{"url":"https://opg.optica.org/abstract.cfm?uri=qels-2005-JTuC92"}],"title":"Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5/spl mu/m range"},{"year":"2005","citation":{"mla":"Hantke, K., et al. “Time-Resolved Photoluminescence of Type-I and Type-II  (GaIn) As/Ga (NAs)  Heterostructures.” <i>Physical Review B</i>, vol. 71, no. 16, 165320, 2005, doi:<a href=\"https://doi.org/10.1103/physrevb.71.165320\">10.1103/physrevb.71.165320</a>.","short":"K. Hantke, J.D. Heber, C. Schlichenmaier, A. Thränhardt, T. Meier, B. Kunert, K. Volz, W. Stolz, S.W. Koch, W.W. Rühle, Physical Review B 71 (2005).","bibtex":"@article{Hantke_Heber_Schlichenmaier_Thränhardt_Meier_Kunert_Volz_Stolz_Koch_Rühle_2005, title={Time-resolved photoluminescence of type-I and type-II  (GaIn) As/Ga (NAs)  heterostructures}, volume={71}, DOI={<a href=\"https://doi.org/10.1103/physrevb.71.165320\">10.1103/physrevb.71.165320</a>}, number={16165320}, journal={Physical Review B}, author={Hantke, K. and Heber, J. D. and Schlichenmaier, C. and Thränhardt, A. and Meier, Torsten and Kunert, B. and Volz, K. and Stolz, W. and Koch, S. W. and Rühle, W. W.}, year={2005} }","apa":"Hantke, K., Heber, J. D., Schlichenmaier, C., Thränhardt, A., Meier, T., Kunert, B., Volz, K., Stolz, W., Koch, S. W., &#38; Rühle, W. W. (2005). Time-resolved photoluminescence of type-I and type-II  (GaIn) As/Ga (NAs)  heterostructures. <i>Physical Review B</i>, <i>71</i>(16), Article 165320. <a href=\"https://doi.org/10.1103/physrevb.71.165320\">https://doi.org/10.1103/physrevb.71.165320</a>","ama":"Hantke K, Heber JD, Schlichenmaier C, et al. Time-resolved photoluminescence of type-I and type-II  (GaIn) As/Ga (NAs)  heterostructures. <i>Physical Review B</i>. 2005;71(16). doi:<a href=\"https://doi.org/10.1103/physrevb.71.165320\">10.1103/physrevb.71.165320</a>","ieee":"K. Hantke <i>et al.</i>, “Time-resolved photoluminescence of type-I and type-II  (GaIn) As/Ga (NAs)  heterostructures,” <i>Physical Review B</i>, vol. 71, no. 16, Art. no. 165320, 2005, doi: <a href=\"https://doi.org/10.1103/physrevb.71.165320\">10.1103/physrevb.71.165320</a>.","chicago":"Hantke, K., J. D. Heber, C. Schlichenmaier, A. Thränhardt, Torsten Meier, B. Kunert, K. Volz, W. Stolz, S. W. Koch, and W. W. Rühle. “Time-Resolved Photoluminescence of Type-I and Type-II  (GaIn) As/Ga (NAs)  Heterostructures.” <i>Physical Review B</i> 71, no. 16 (2005). <a href=\"https://doi.org/10.1103/physrevb.71.165320\">https://doi.org/10.1103/physrevb.71.165320</a>."},"intvolume":"        71","publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"issue":"16","title":"Time-resolved photoluminescence of type-I and type-II  (GaIn) As/Ga (NAs)  heterostructures","doi":"10.1103/physrevb.71.165320","date_updated":"2023-04-24T06:13:15Z","date_created":"2021-08-24T09:23:59Z","author":[{"full_name":"Hantke, K.","last_name":"Hantke","first_name":"K."},{"last_name":"Heber","full_name":"Heber, J. D.","first_name":"J. D."},{"first_name":"C.","last_name":"Schlichenmaier","full_name":"Schlichenmaier, C."},{"first_name":"A.","full_name":"Thränhardt, A.","last_name":"Thränhardt"},{"first_name":"Torsten","id":"344","full_name":"Meier, Torsten","orcid":"0000-0001-8864-2072","last_name":"Meier"},{"first_name":"B.","last_name":"Kunert","full_name":"Kunert, B."},{"last_name":"Volz","full_name":"Volz, K.","first_name":"K."},{"first_name":"W.","full_name":"Stolz, W.","last_name":"Stolz"},{"first_name":"S. W.","last_name":"Koch","full_name":"Koch, S. W."},{"full_name":"Rühle, W. W.","last_name":"Rühle","first_name":"W. W."}],"volume":71,"abstract":[{"text":"A set of (Ga0.77In0.23)As/Ga(NxAs1−x) heterostructures is studied by time-resolved photoluminescence. Four samples with nitrogen concentrations from x=0.48% up to x=2.2% are investigated at different temperatures and with different excitation densities. The experiments suggest that the heterostructure band offset is type I for x=0.48% and type II for x=2.2%. The situation is more complex for x=0.72% and x=1.25%, since these samples are close to the transition from type I to type II. The experimental findings are analyzed using a detailed microscopic theory. Numerical calculations describe the measured data well. In particular, the interpretation of the experimental results concerning the band alignment is confirmed by the theoretical analysis.","lang":"eng"}],"status":"public","type":"journal_article","publication":"Physical Review B","article_number":"165320","extern":"1","language":[{"iso":"eng"}],"_id":"23501","user_id":"49063","department":[{"_id":"15"},{"_id":"170"},{"_id":"293"}]}]