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Fabrication of two-dimensional p–n junctions formed by compensation doping of p-modulation doped GaAs/InyGa1−yAs/AlxGa1−x As heterostructures. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 725–728. <a href=\"https://doi.org/10.1016/j.physe.2003.12.109\">https://doi.org/10.1016/j.physe.2003.12.109</a>","mla":"Reuter, Dirk, et al. “Fabrication of Two-Dimensional p–n Junctions Formed by Compensation Doping of p-Modulation Doped GaAs/InyGa1−yAs/AlxGa1−x As Heterostructures.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2004, pp. 725–28, doi:<a href=\"https://doi.org/10.1016/j.physe.2003.12.109\">10.1016/j.physe.2003.12.109</a>.","bibtex":"@article{Reuter_Werner_Riedesel_Wieck_Schuster_Hansen_2004, title={Fabrication of two-dimensional p–n junctions formed by compensation doping of p-modulation doped GaAs/InyGa1−yAs/AlxGa1−x As heterostructures}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2003.12.109\">10.1016/j.physe.2003.12.109</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Reuter, Dirk and Werner, C. and Riedesel, C. and Wieck, A.D. and Schuster, D. and Hansen, W.}, year={2004}, pages={725–728} }","chicago":"Reuter, Dirk, C. Werner, C. Riedesel, A.D. Wieck, D. Schuster, and W. Hansen. “Fabrication of Two-Dimensional p–n Junctions Formed by Compensation Doping of p-Modulation Doped GaAs/InyGa1−yAs/AlxGa1−x As Heterostructures.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2004, 725–28. <a href=\"https://doi.org/10.1016/j.physe.2003.12.109\">https://doi.org/10.1016/j.physe.2003.12.109</a>.","ama":"Reuter D, Werner C, Riedesel C, Wieck AD, Schuster D, Hansen W. Fabrication of two-dimensional p–n junctions formed by compensation doping of p-modulation doped GaAs/InyGa1−yAs/AlxGa1−x As heterostructures. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2004:725-728. doi:<a href=\"https://doi.org/10.1016/j.physe.2003.12.109\">10.1016/j.physe.2003.12.109</a>","short":"D. Reuter, C. Werner, C. Riedesel, A.D. Wieck, D. Schuster, W. Hansen, Physica E: Low-Dimensional Systems and Nanostructures (2004) 725–728."},"publication":"Physica E: Low-dimensional Systems and Nanostructures","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","date_created":"2019-03-27T11:55:18Z","date_updated":"2022-01-06T07:03:59Z","publication_status":"published","author":[{"last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763"},{"full_name":"Werner, C.","first_name":"C.","last_name":"Werner"},{"full_name":"Riedesel, C.","first_name":"C.","last_name":"Riedesel"},{"full_name":"Wieck, A.D.","first_name":"A.D.","last_name":"Wieck"},{"first_name":"D.","last_name":"Schuster","full_name":"Schuster, D."},{"last_name":"Hansen","first_name":"W.","full_name":"Hansen, W."}],"publication_identifier":{"issn":["1386-9477"]},"status":"public","title":"Fabrication of two-dimensional p–n junctions formed by compensation doping of p-modulation doped GaAs/InyGa1−yAs/AlxGa1−x As heterostructures","year":"2004","doi":"10.1016/j.physe.2003.12.109","user_id":"42514","language":[{"iso":"eng"}],"_id":"8701","page":"725-728"}]