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Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope. <i>Semiconductor Science and Technology</i>. 2003:735-739. doi:<a href=\"https://doi.org/10.1088/0268-1242/17/7/317\">10.1088/0268-1242/17/7/317</a>","bibtex":"@article{Apetrii_Fischer_Kunze_Reuter_Wieck_2003, title={Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope}, DOI={<a href=\"https://doi.org/10.1088/0268-1242/17/7/317\">10.1088/0268-1242/17/7/317</a>}, journal={Semiconductor Science and Technology}, author={Apetrii, G and Fischer, S F and Kunze, U and Reuter, Dirk and Wieck, A D}, year={2003}, pages={735–739} }","mla":"Apetrii, G., et al. “Influence of Processing Parameters on the Transport Properties of Quantum Point Contacts Fabricated with an Atomic Force Microscope.” <i>Semiconductor Science and Technology</i>, 2003, pp. 735–39, doi:<a href=\"https://doi.org/10.1088/0268-1242/17/7/317\">10.1088/0268-1242/17/7/317</a>."},"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-03-28T15:07:53Z"},{"publication_status":"published","date_updated":"2022-01-06T07:04:00Z","author":[{"last_name":"Baumann","first_name":"P.","full_name":"Baumann, P."},{"full_name":"Pirug, G.","first_name":"G.","last_name":"Pirug"},{"id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter"},{"first_name":"H.P.","last_name":"Bonzel","full_name":"Bonzel, H.P."}],"publication_identifier":{"issn":["0039-6028"]},"year":"2003","title":"UHV adsorption studies of K/H2O on Pt(111) and O/CH3COOH on Cu(110): orientation and intermediates","status":"public","user_id":"42514","doi":"10.1016/0039-6028(95)00457-2","_id":"8790","language":[{"iso":"eng"}],"page":"186-196","citation":{"chicago":"Baumann, P., G. Pirug, Dirk Reuter, and H.P. Bonzel. “UHV Adsorption Studies of K/H2O on Pt(111) and O/CH3COOH on Cu(110): Orientation and Intermediates.” <i>Surface Science</i>, 2003, 186–96. <a href=\"https://doi.org/10.1016/0039-6028(95)00457-2\">https://doi.org/10.1016/0039-6028(95)00457-2</a>.","short":"P. Baumann, G. Pirug, D. Reuter, H.P. Bonzel, Surface Science (2003) 186–196.","ieee":"P. Baumann, G. Pirug, D. Reuter, and H. P. Bonzel, “UHV adsorption studies of K/H2O on Pt(111) and O/CH3COOH on Cu(110): orientation and intermediates,” <i>Surface Science</i>, pp. 186–196, 2003.","apa":"Baumann, P., Pirug, G., Reuter, D., &#38; Bonzel, H. P. (2003). UHV adsorption studies of K/H2O on Pt(111) and O/CH3COOH on Cu(110): orientation and intermediates. <i>Surface Science</i>, 186–196. <a href=\"https://doi.org/10.1016/0039-6028(95)00457-2\">https://doi.org/10.1016/0039-6028(95)00457-2</a>","bibtex":"@article{Baumann_Pirug_Reuter_Bonzel_2003, title={UHV adsorption studies of K/H2O on Pt(111) and O/CH3COOH on Cu(110): orientation and intermediates}, DOI={<a href=\"https://doi.org/10.1016/0039-6028(95)00457-2\">10.1016/0039-6028(95)00457-2</a>}, journal={Surface Science}, author={Baumann, P. and Pirug, G. and Reuter, Dirk and Bonzel, H.P.}, year={2003}, pages={186–196} }","ama":"Baumann P, Pirug G, Reuter D, Bonzel HP. UHV adsorption studies of K/H2O on Pt(111) and O/CH3COOH on Cu(110): orientation and intermediates. <i>Surface Science</i>. 2003:186-196. doi:<a href=\"https://doi.org/10.1016/0039-6028(95)00457-2\">10.1016/0039-6028(95)00457-2</a>","mla":"Baumann, P., et al. “UHV Adsorption Studies of K/H2O on Pt(111) and O/CH3COOH on Cu(110): Orientation and Intermediates.” <i>Surface Science</i>, 2003, pp. 186–96, doi:<a href=\"https://doi.org/10.1016/0039-6028(95)00457-2\">10.1016/0039-6028(95)00457-2</a>."},"publication":"Surface Science","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","date_created":"2019-04-01T08:45:14Z"},{"_id":"29694","publisher":"American Vacuum Society","user_id":"26883","volume":21,"status":"public","citation":{"mla":"Thomas, A., et al. “Aluminum Oxidation by a Remote Electron Cyclotron Resonance Plasma in Magnetic Tunnel Junctions.” <i>Journal of Vacuum Science &#38; Technology B: Microelectronics and Nanometer Structures</i>, vol. 21, no. 5, 2120, American Vacuum Society, 2003, doi:<a href=\"https://doi.org/10.1116/1.1609480\">10.1116/1.1609480</a>.","bibtex":"@article{Thomas_Brückl_Sacher_Schmalhorst_Reiss_2003, title={Aluminum oxidation by a remote electron cyclotron resonance plasma in magnetic tunnel junctions}, volume={21}, DOI={<a href=\"https://doi.org/10.1116/1.1609480\">10.1116/1.1609480</a>}, number={52120}, journal={Journal of Vacuum Science &#38; Technology B: Microelectronics and Nanometer Structures}, publisher={American Vacuum Society}, author={Thomas, A. and Brückl, H. and Sacher, Marc and Schmalhorst, J. and Reiss, G.}, year={2003} }","ama":"Thomas A, Brückl H, Sacher M, Schmalhorst J, Reiss G. Aluminum oxidation by a remote electron cyclotron resonance plasma in magnetic tunnel junctions. <i>Journal of Vacuum Science &#38; Technology B: Microelectronics and Nanometer Structures</i>. 2003;21(5). doi:<a href=\"https://doi.org/10.1116/1.1609480\">10.1116/1.1609480</a>","ieee":"A. Thomas, H. Brückl, M. Sacher, J. Schmalhorst, and G. Reiss, “Aluminum oxidation by a remote electron cyclotron resonance plasma in magnetic tunnel junctions,” <i>Journal of Vacuum Science &#38; Technology B: Microelectronics and Nanometer Structures</i>, vol. 21, no. 5, Art. no. 2120, 2003, doi: <a href=\"https://doi.org/10.1116/1.1609480\">10.1116/1.1609480</a>.","apa":"Thomas, A., Brückl, H., Sacher, M., Schmalhorst, J., &#38; Reiss, G. (2003). Aluminum oxidation by a remote electron cyclotron resonance plasma in magnetic tunnel junctions. <i>Journal of Vacuum Science &#38; Technology B: Microelectronics and Nanometer Structures</i>, <i>21</i>(5), Article 2120. <a href=\"https://doi.org/10.1116/1.1609480\">https://doi.org/10.1116/1.1609480</a>","chicago":"Thomas, A., H. Brückl, Marc Sacher, J. Schmalhorst, and G. Reiss. “Aluminum Oxidation by a Remote Electron Cyclotron Resonance Plasma in Magnetic Tunnel Junctions.” <i>Journal of Vacuum Science &#38; Technology B: Microelectronics and Nanometer Structures</i> 21, no. 5 (2003). <a href=\"https://doi.org/10.1116/1.1609480\">https://doi.org/10.1116/1.1609480</a>.","short":"A. Thomas, H. Brückl, M. Sacher, J. Schmalhorst, G. Reiss, Journal of Vacuum Science &#38; Technology B: Microelectronics and Nanometer Structures 21 (2003)."},"article_number":"2120","language":[{"iso":"eng"}],"doi":"10.1116/1.1609480","year":"2003","title":"Aluminum oxidation by a remote electron cyclotron resonance plasma in magnetic tunnel junctions","author":[{"full_name":"Thomas, A.","last_name":"Thomas","first_name":"A."},{"full_name":"Brückl, H.","first_name":"H.","last_name":"Brückl"},{"full_name":"Sacher, Marc","first_name":"Marc","last_name":"Sacher","orcid":"0000-0001-6217-336X","id":"26883"},{"last_name":"Schmalhorst","first_name":"J.","full_name":"Schmalhorst, J."},{"full_name":"Reiss, G.","first_name":"G.","last_name":"Reiss"}],"publication_identifier":{"issn":["0734-211X"]},"publication_status":"published","date_updated":"2024-04-23T12:14:43Z","intvolume":"        21","date_created":"2022-01-31T10:26:12Z","type":"journal_article","keyword":["General Engineering"],"department":[{"_id":"15"}],"publication":"Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures","issue":"5","extern":"1"},{"citation":{"mla":"Meier, Torsten, et al. “Dynamics of Short-Time-Scale Energy Relaxation of Optical Excitations Due to Electron-Electron Scattering in the Presence of Arbitrary Disorder.” <i>Physical Review B</i>, vol. 68, no. 11, 113104, American Physical Society, 2003, doi:<a href=\"https://doi.org/10.1103/PhysRevB.68.113104\">10.1103/PhysRevB.68.113104</a>.","ama":"Meier T, Varga I, Thomas P, Koch SW. Dynamics of short-time-scale energy relaxation of optical excitations due to electron-electron scattering in the presence of arbitrary disorder. <i>Physical Review B</i>. 2003;68(11). doi:<a href=\"https://doi.org/10.1103/PhysRevB.68.113104\">10.1103/PhysRevB.68.113104</a>","bibtex":"@article{Meier_Varga_Thomas_Koch_2003, title={Dynamics of short-time-scale energy relaxation of optical excitations due to electron-electron scattering in the presence of arbitrary disorder}, volume={68}, DOI={<a href=\"https://doi.org/10.1103/PhysRevB.68.113104\">10.1103/PhysRevB.68.113104</a>}, number={11113104}, journal={Physical Review B}, publisher={American Physical Society}, author={Meier, Torsten and Varga, I. and Thomas, P. and Koch, S.W.}, year={2003} }","apa":"Meier, T., Varga, I., Thomas, P., &#38; Koch, S. W. (2003). Dynamics of short-time-scale energy relaxation of optical excitations due to electron-electron scattering in the presence of arbitrary disorder. <i>Physical Review B</i>, <i>68</i>(11), Article 113104. <a href=\"https://doi.org/10.1103/PhysRevB.68.113104\">https://doi.org/10.1103/PhysRevB.68.113104</a>","ieee":"T. Meier, I. Varga, P. Thomas, and S. W. Koch, “Dynamics of short-time-scale energy relaxation of optical excitations due to electron-electron scattering in the presence of arbitrary disorder,” <i>Physical Review B</i>, vol. 68, no. 11, Art. no. 113104, 2003, doi: <a href=\"https://doi.org/10.1103/PhysRevB.68.113104\">10.1103/PhysRevB.68.113104</a>.","chicago":"Meier, Torsten, I. Varga, P. Thomas, and S.W. Koch. “Dynamics of Short-Time-Scale Energy Relaxation of Optical Excitations Due to Electron-Electron Scattering in the Presence of Arbitrary Disorder.” <i>Physical Review B</i> 68, no. 11 (2003). <a href=\"https://doi.org/10.1103/PhysRevB.68.113104\">https://doi.org/10.1103/PhysRevB.68.113104</a>.","short":"T. Meier, I. Varga, P. Thomas, S.W. Koch, Physical Review B 68 (2003)."},"status":"public","volume":68,"user_id":"49063","_id":"43290","publisher":"American Physical Society","extern":"1","abstract":[{"lang":"eng","text":"A nonequilibrium occupation distribution relaxes towards the Fermi-Dirac distribution due to electron-electron scattering even in finite Fermi systems. The dynamic evolution of this thermalization process assumed to result from an optical excitation is investigated numerically by solving a Boltzmann equation for the carrier populations using a one-dimensional disordered system. We focus on the short-time-scale behavior. The logarithmically long time scale associated with the glassy behavior of interacting electrons in disordered systems is not treated in our investigation. For weak disorder and short range interaction we recover the expected result that the relaxation rate is enhanced by disorder. For sufficiently strong disorder, however, we find an opposite trend due to the reduction of scattering probabilities originating from the strong localization of the single-particle states. Long-range interaction in this regime produces a similar effect. The relaxation rate is found to scale with the interaction strength, however, the interplay between the implicit and the explicit character of the interaction produces an anomalous exponent."}],"issue":"11","publication":"Physical Review B","department":[{"_id":"293"}],"type":"journal_article","date_created":"2023-04-02T13:10:27Z","intvolume":"        68","publication_status":"published","date_updated":"2023-04-02T13:14:21Z","author":[{"last_name":"Meier","first_name":"Torsten","orcid":"0000-0001-8864-2072","full_name":"Meier, Torsten","id":"344"},{"first_name":"I.","last_name":"Varga","full_name":"Varga, I."},{"first_name":"P.","last_name":"Thomas","full_name":"Thomas, P."},{"full_name":"Koch, S.W.","first_name":"S.W.","last_name":"Koch"}],"title":"Dynamics of short-time-scale energy relaxation of optical excitations due to electron-electron scattering in the presence of arbitrary disorder","year":"2003","doi":"10.1103/PhysRevB.68.113104","language":[{"iso":"eng"}],"article_number":"113104","main_file_link":[{"url":"https://journals.aps.org/prb/abstract/10.1103/PhysRevB.68.113104"}]},{"publisher":"American Physical Society","_id":"43289","volume":68,"user_id":"49063","status":"public","citation":{"mla":"Meier, Torsten, et al. “Theory for the Nonlinear Optical Response of Semiconductor Surfaces: Application to the Optical Stark Effect and Spectral Oscillations of the Si(111)-(2x1) Surface Exciton.” <i>Physical Review B</i>, vol. 68, no. 4, 045330, American Physical Society, 2003, doi:<a href=\"https://doi.org/10.1103/PhysRevB.68.045330\">10.1103/PhysRevB.68.045330</a>.","ama":"Meier T, Reichelt M, Koch SW, Rohlfing M. Theory for the nonlinear optical response of semiconductor surfaces: Application to the optical Stark effect and spectral oscillations of the Si(111)-(2x1) surface exciton. <i>Physical Review B</i>. 2003;68(4). doi:<a href=\"https://doi.org/10.1103/PhysRevB.68.045330\">10.1103/PhysRevB.68.045330</a>","bibtex":"@article{Meier_Reichelt_Koch_Rohlfing_2003, title={Theory for the nonlinear optical response of semiconductor surfaces: Application to the optical Stark effect and spectral oscillations of the Si(111)-(2x1) surface exciton}, volume={68}, DOI={<a href=\"https://doi.org/10.1103/PhysRevB.68.045330\">10.1103/PhysRevB.68.045330</a>}, number={4045330}, journal={Physical Review B}, publisher={American Physical Society}, author={Meier, Torsten and Reichelt, Matthias and Koch, S.W. and Rohlfing, M.}, year={2003} }","apa":"Meier, T., Reichelt, M., Koch, S. W., &#38; Rohlfing, M. (2003). Theory for the nonlinear optical response of semiconductor surfaces: Application to the optical Stark effect and spectral oscillations of the Si(111)-(2x1) surface exciton. <i>Physical Review B</i>, <i>68</i>(4), Article 045330. <a href=\"https://doi.org/10.1103/PhysRevB.68.045330\">https://doi.org/10.1103/PhysRevB.68.045330</a>","ieee":"T. Meier, M. Reichelt, S. W. Koch, and M. Rohlfing, “Theory for the nonlinear optical response of semiconductor surfaces: Application to the optical Stark effect and spectral oscillations of the Si(111)-(2x1) surface exciton,” <i>Physical Review B</i>, vol. 68, no. 4, Art. no. 045330, 2003, doi: <a href=\"https://doi.org/10.1103/PhysRevB.68.045330\">10.1103/PhysRevB.68.045330</a>.","chicago":"Meier, Torsten, Matthias Reichelt, S.W. Koch, and M. Rohlfing. “Theory for the Nonlinear Optical Response of Semiconductor Surfaces: Application to the Optical Stark Effect and Spectral Oscillations of the Si(111)-(2x1) Surface Exciton.” <i>Physical Review B</i> 68, no. 4 (2003). <a href=\"https://doi.org/10.1103/PhysRevB.68.045330\">https://doi.org/10.1103/PhysRevB.68.045330</a>.","short":"T. Meier, M. Reichelt, S.W. Koch, M. Rohlfing, Physical Review B 68 (2003)."},"language":[{"iso":"eng"}],"article_number":"045330","main_file_link":[{"url":"https://journals.aps.org/prb/abstract/10.1103/PhysRevB.68.045330"}],"doi":"10.1103/PhysRevB.68.045330","author":[{"last_name":"Meier","first_name":"Torsten","orcid":"0000-0001-8864-2072","full_name":"Meier, Torsten","id":"344"},{"id":"138","first_name":"Matthias","last_name":"Reichelt","full_name":"Reichelt, Matthias"},{"full_name":"Koch, S.W.","first_name":"S.W.","last_name":"Koch"},{"full_name":"Rohlfing, M.","last_name":"Rohlfing","first_name":"M."}],"title":"Theory for the nonlinear optical response of semiconductor surfaces: Application to the optical Stark effect and spectral oscillations of the Si(111)-(2x1) surface exciton","year":"2003","intvolume":"        68","publication_status":"published","date_updated":"2023-04-02T13:07:52Z","date_created":"2023-04-02T13:07:49Z","department":[{"_id":"293"}],"type":"journal_article","publication":"Physical Review B","issue":"4","extern":"1","abstract":[{"lang":"eng","text":"A microscopic approach is presented to compute nonlinear optical properties of semiconductor surfaces. The method uses quasiparticle wave functions and dispersions obtained from ab initio band-structure theory as an input for Bloch equations which describe the optical properties. Excitonic effects in the linear absorption spectra of the Si(111)-\r\n(2×1) surface are obtained by integrating equations of motion. To demonstrate the applicability of the approach for analyzing nonlinear optical properties, ultrafast light-intensity-dependent absorption changes of the surface exciton are predicted. The numerical results discuss the optical Stark effect and spectral oscillations of the surface exciton which can both be observed in pump-probe experiments."}]},{"abstract":[{"lang":"eng","text":"Signatures of exciton and two-exciton states in semiconductor systems are investigated experimentally and theoretically. A set of quantum well samples with different well widths is studied using coherent excitation spectroscopy. The experimental results are analyzed using a microscopic model demonstrating the importance of biexciton correlations and disorder effects. Additional numerical investigations of absorption changes in small nanorings are employed to analyze optical transitions from two-exciton to three-exciton resonances."}],"extern":"1","issue":"3","publication":"physica status solidi (b)","type":"journal_article","department":[{"_id":"293"}],"date_created":"2023-04-02T13:03:31Z","date_updated":"2023-04-02T13:03:34Z","publication_status":"published","intvolume":"       238","year":"2003","title":"Signatures of biexcitons and triexcitons in coherent non-degenerate semiconductor optics","author":[{"full_name":"Meier, Torsten","first_name":"Torsten","orcid":"0000-0001-8864-2072","last_name":"Meier","id":"344"},{"first_name":"C.","last_name":"Sieh","full_name":"Sieh, C."},{"full_name":"Finger, E.","last_name":"Finger","first_name":"E."},{"last_name":"Stolz","first_name":"W.","full_name":"Stolz, W."},{"full_name":"Rühle, W.W.","first_name":"W.W.","last_name":"Rühle"},{"full_name":"Koch, S.W.","first_name":"S.W.","last_name":"Koch"},{"last_name":"Thomas","first_name":"P.","full_name":"Thomas, P."}],"doi":"10.1002/pssb.200303183","main_file_link":[{"url":"https://onlinelibrary.wiley.com/doi/abs/10.1002/pssb.200303183"}],"language":[{"iso":"eng"}],"citation":{"bibtex":"@article{Meier_Sieh_Finger_Stolz_Rühle_Koch_Thomas_2003, title={Signatures of biexcitons and triexcitons in coherent non-degenerate semiconductor optics}, volume={238}, DOI={<a href=\"https://doi.org/10.1002/pssb.200303183\">10.1002/pssb.200303183</a>}, number={3}, journal={physica status solidi (b)}, publisher={WILEY‐VCH Verlag}, author={Meier, Torsten and Sieh, C. and Finger, E. and Stolz, W. and Rühle, W.W. and Koch, S.W. and Thomas, P.}, year={2003}, pages={537–540} }","ama":"Meier T, Sieh C, Finger E, et al. Signatures of biexcitons and triexcitons in coherent non-degenerate semiconductor optics. <i>physica status solidi (b)</i>. 2003;238(3):537-540. doi:<a href=\"https://doi.org/10.1002/pssb.200303183\">10.1002/pssb.200303183</a>","mla":"Meier, Torsten, et al. “Signatures of Biexcitons and Triexcitons in Coherent Non-Degenerate Semiconductor Optics.” <i>Physica Status Solidi (b)</i>, vol. 238, no. 3, WILEY‐VCH Verlag, 2003, pp. 537–40, doi:<a href=\"https://doi.org/10.1002/pssb.200303183\">10.1002/pssb.200303183</a>.","short":"T. Meier, C. Sieh, E. Finger, W. Stolz, W.W. Rühle, S.W. Koch, P. Thomas, Physica Status Solidi (b) 238 (2003) 537–540.","chicago":"Meier, Torsten, C. Sieh, E. Finger, W. Stolz, W.W. Rühle, S.W. Koch, and P. Thomas. “Signatures of Biexcitons and Triexcitons in Coherent Non-Degenerate Semiconductor Optics.” <i>Physica Status Solidi (b)</i> 238, no. 3 (2003): 537–40. <a href=\"https://doi.org/10.1002/pssb.200303183\">https://doi.org/10.1002/pssb.200303183</a>.","ieee":"T. Meier <i>et al.</i>, “Signatures of biexcitons and triexcitons in coherent non-degenerate semiconductor optics,” <i>physica status solidi (b)</i>, vol. 238, no. 3, pp. 537–540, 2003, doi: <a href=\"https://doi.org/10.1002/pssb.200303183\">10.1002/pssb.200303183</a>.","apa":"Meier, T., Sieh, C., Finger, E., Stolz, W., Rühle, W. W., Koch, S. W., &#38; Thomas, P. (2003). Signatures of biexcitons and triexcitons in coherent non-degenerate semiconductor optics. <i>Physica Status Solidi (b)</i>, <i>238</i>(3), 537–540. <a href=\"https://doi.org/10.1002/pssb.200303183\">https://doi.org/10.1002/pssb.200303183</a>"},"status":"public","user_id":"49063","volume":238,"page":"537-540","_id":"43288","publisher":"WILEY‐VCH Verlag"},{"issue":"11","publication":"Physical Review B","abstract":[{"lang":"eng","text":"A nonequilibrium occupation distribution relaxes towards the Fermi-Dirac distribution due to electron-electron scattering even in finite Fermi systems. The dynamic evolution of this thermalization process assumed to result from an optical excitation is investigated numerically by solving a Boltzmann equation for the carrier populations using a one-dimensional disordered system. We focus on the short-time-scale behavior. The logarithmically long time scale associated with the glassy behavior of interacting electrons in disordered systems is not treated in our investigation. For weak disorder and short range interaction we recover the expected result that the relaxation rate is enhanced by disorder. For sufficiently strong disorder, however, we find an opposite trend due to the reduction of scattering probabilities originating from the strong localization of the single-particle states. Long-range interaction in this regime produces a similar effect. The relaxation rate is found to scale with the interaction strength, however, the interplay between the implicit and the explicit character of the interaction produces an anomalous exponent."}],"extern":"1","date_created":"2021-08-24T09:31:12Z","department":[{"_id":"15"},{"_id":"170"},{"_id":"293"}],"type":"journal_article","author":[{"last_name":"Varga","first_name":"Imre","full_name":"Varga, Imre"},{"last_name":"Thomas","first_name":"Peter","full_name":"Thomas, Peter"},{"first_name":"Torsten","last_name":"Meier","orcid":"0000-0001-8864-2072","full_name":"Meier, Torsten","id":"344"},{"last_name":"Koch","first_name":"Stephan W.","full_name":"Koch, Stephan W."}],"publication_identifier":{"issn":["0163-1829","1095-3795"]},"year":"2003","title":"Dynamics of short-time-scale energy relaxation of optical excitations due to electron-electron scattering in the presence of arbitrary disorder","intvolume":"        68","date_updated":"2023-04-24T06:40:00Z","publication_status":"published","language":[{"iso":"eng"}],"article_number":"113104","doi":"10.1103/physrevb.68.113104","citation":{"ama":"Varga I, Thomas P, Meier T, Koch SW. Dynamics of short-time-scale energy relaxation of optical excitations due to electron-electron scattering in the presence of arbitrary disorder. <i>Physical Review B</i>. 2003;68(11). doi:<a href=\"https://doi.org/10.1103/physrevb.68.113104\">10.1103/physrevb.68.113104</a>","bibtex":"@article{Varga_Thomas_Meier_Koch_2003, title={Dynamics of short-time-scale energy relaxation of optical excitations due to electron-electron scattering in the presence of arbitrary disorder}, volume={68}, DOI={<a href=\"https://doi.org/10.1103/physrevb.68.113104\">10.1103/physrevb.68.113104</a>}, number={11113104}, journal={Physical Review B}, author={Varga, Imre and Thomas, Peter and Meier, Torsten and Koch, Stephan W.}, year={2003} }","mla":"Varga, Imre, et al. “Dynamics of Short-Time-Scale Energy Relaxation of Optical Excitations Due to Electron-Electron Scattering in the Presence of Arbitrary Disorder.” <i>Physical Review B</i>, vol. 68, no. 11, 113104, 2003, doi:<a href=\"https://doi.org/10.1103/physrevb.68.113104\">10.1103/physrevb.68.113104</a>.","chicago":"Varga, Imre, Peter Thomas, Torsten Meier, and Stephan W. Koch. “Dynamics of Short-Time-Scale Energy Relaxation of Optical Excitations Due to Electron-Electron Scattering in the Presence of Arbitrary Disorder.” <i>Physical Review B</i> 68, no. 11 (2003). <a href=\"https://doi.org/10.1103/physrevb.68.113104\">https://doi.org/10.1103/physrevb.68.113104</a>.","short":"I. Varga, P. Thomas, T. Meier, S.W. Koch, Physical Review B 68 (2003).","apa":"Varga, I., Thomas, P., Meier, T., &#38; Koch, S. W. (2003). Dynamics of short-time-scale energy relaxation of optical excitations due to electron-electron scattering in the presence of arbitrary disorder. <i>Physical Review B</i>, <i>68</i>(11), Article 113104. <a href=\"https://doi.org/10.1103/physrevb.68.113104\">https://doi.org/10.1103/physrevb.68.113104</a>","ieee":"I. Varga, P. Thomas, T. Meier, and S. W. Koch, “Dynamics of short-time-scale energy relaxation of optical excitations due to electron-electron scattering in the presence of arbitrary disorder,” <i>Physical Review B</i>, vol. 68, no. 11, Art. no. 113104, 2003, doi: <a href=\"https://doi.org/10.1103/physrevb.68.113104\">10.1103/physrevb.68.113104</a>."},"status":"public","_id":"23508","volume":68,"user_id":"49063"},{"citation":{"apa":"Meier, T., Filinov, V. S., Thomas, P., Varga, I., Bonitz, M., Fortov, V. E., &#38; Koch, S. W. (2003). Electronic transport in a one-dimensional random array of scatterers. <i>Journal of Physics A: Mathematical and General</i>, <i>36</i>(22), 5905–5911. <a href=\"https://doi.org/10.1088/0305-4470/36/22/311\">https://doi.org/10.1088/0305-4470/36/22/311</a>","ieee":"T. Meier <i>et al.</i>, “Electronic transport in a one-dimensional random array of scatterers,” <i>Journal of Physics A: Mathematical and General</i>, vol. 36, no. 22, pp. 5905–5911, 2003, doi: <a href=\"https://doi.org/10.1088/0305-4470/36/22/311\">10.1088/0305-4470/36/22/311</a>.","chicago":"Meier, Torsten, V.S. Filinov, P. Thomas, I. Varga, M. Bonitz, V.E Fortov, and S.W. Koch. “Electronic Transport in a One-Dimensional Random Array of Scatterers.” <i>Journal of Physics A: Mathematical and General</i> 36, no. 22 (2003): 5905–11. <a href=\"https://doi.org/10.1088/0305-4470/36/22/311\">https://doi.org/10.1088/0305-4470/36/22/311</a>.","short":"T. Meier, V.S. Filinov, P. Thomas, I. Varga, M. Bonitz, V.E. Fortov, S.W. Koch, Journal of Physics A: Mathematical and General 36 (2003) 5905–5911.","mla":"Meier, Torsten, et al. “Electronic Transport in a One-Dimensional Random Array of Scatterers.” <i>Journal of Physics A: Mathematical and General</i>, vol. 36, no. 22, IOP Publishing, 2003, pp. 5905–11, doi:<a href=\"https://doi.org/10.1088/0305-4470/36/22/311\">10.1088/0305-4470/36/22/311</a>.","ama":"Meier T, Filinov VS, Thomas P, et al. Electronic transport in a one-dimensional random array of scatterers. <i>Journal of Physics A: Mathematical and General</i>. 2003;36(22):5905-5911. doi:<a href=\"https://doi.org/10.1088/0305-4470/36/22/311\">10.1088/0305-4470/36/22/311</a>","bibtex":"@article{Meier_Filinov_Thomas_Varga_Bonitz_Fortov_Koch_2003, title={Electronic transport in a one-dimensional random array of scatterers}, volume={36}, DOI={<a href=\"https://doi.org/10.1088/0305-4470/36/22/311\">10.1088/0305-4470/36/22/311</a>}, number={22}, journal={Journal of Physics A: Mathematical and General}, publisher={IOP Publishing}, author={Meier, Torsten and Filinov, V.S. and Thomas, P. and Varga, I. and Bonitz, M. and Fortov, V.E and Koch, S.W.}, year={2003}, pages={5905–5911} }"},"user_id":"49063","volume":36,"page":"5905-5911","_id":"43284","publisher":"IOP Publishing","status":"public","type":"journal_article","department":[{"_id":"293"}],"date_created":"2023-04-02T12:53:41Z","abstract":[{"text":"The quantum dynamics of an ensemble of interacting electrons in an array of random scatterers is treated using a new numerical approach for the calculation of average values of quantum operators and time correlation functions in the Wigner representation. This approach combines both molecular dynamics and Monte Carlo methods and computes numerical traces and spectra of the relevant dynamical quantities such as momentum–momentum correlation functions and spatial dispersions. Considering, as an application, a system with fixed scatterers, the results clearly demonstrate that the many-particle interaction between the electrons can lead to an enhancement of the conductivity at intermediate densities.","lang":"eng"}],"extern":"1","issue":"22","publication":"Journal of Physics A: Mathematical and General","doi":"10.1088/0305-4470/36/22/311","main_file_link":[{"url":"https://iopscience.iop.org/article/10.1088/0305-4470/36/22/311/meta"}],"language":[{"iso":"eng"}],"date_updated":"2023-04-24T06:42:13Z","publication_status":"published","intvolume":"        36","title":"Electronic transport in a one-dimensional random array of scatterers","year":"2003","author":[{"last_name":"Meier","first_name":"Torsten","orcid":"0000-0001-8864-2072","full_name":"Meier, Torsten","id":"344"},{"first_name":"V.S.","last_name":"Filinov","full_name":"Filinov, V.S."},{"full_name":"Thomas, P.","last_name":"Thomas","first_name":"P."},{"first_name":"I.","last_name":"Varga","full_name":"Varga, I."},{"last_name":"Bonitz","first_name":"M.","full_name":"Bonitz, M."},{"full_name":"Fortov, V.E","first_name":"V.E","last_name":"Fortov"},{"full_name":"Koch, S.W.","last_name":"Koch","first_name":"S.W."}]},{"doi":"10.1002/pssb.200303617","main_file_link":[{"url":"https://onlinelibrary.wiley.com/doi/10.1002/pssb.200303617"}],"language":[{"iso":"eng"}],"date_updated":"2023-04-24T06:34:10Z","publication_status":"published","intvolume":"       241","title":"Wigner approach to quantum dynamics simulations of the interacting carriers in disordered systems","year":"2003","author":[{"first_name":"Torsten","last_name":"Meier","orcid":"0000-0001-8864-2072","full_name":"Meier, Torsten","id":"344"},{"first_name":"V.","last_name":"Filinov","full_name":"Filinov, V."},{"last_name":"Thomas","first_name":"P.","full_name":"Thomas, P."},{"full_name":"Bonitz, M.","first_name":"M.","last_name":"Bonitz"},{"last_name":"Fortov","first_name":"V.","full_name":"Fortov, V."},{"last_name":"Varga","first_name":"I.","full_name":"Varga, I."}],"type":"journal_article","department":[{"_id":"293"}],"date_created":"2023-04-24T06:34:08Z","abstract":[{"lang":"eng","text":"The new method for solving Wigner–Liouville's type equations and studying dynamics of quantum particles has been developed within the Wigner formulation of quantum statistical mechanics. This approach combines both molecular dynamics and Monte Carlo methods and computes traces and spectra of the relevant dynamical quantities. Considering, as an application, the quantum dynamics of an ensemble of interacting electrons in an array of random scatterers clearly demonstrates that the many-particle interaction between the electrons can lead to an enhancement of the electrical conductivity."}],"extern":"1","issue":"1","publication":"physica status solidi (b)","user_id":"49063","volume":241,"page":"40-46","_id":"44124","status":"public","citation":{"apa":"Meier, T., Filinov, V., Thomas, P., Bonitz, M., Fortov, V., &#38; Varga, I. (2003). Wigner approach to quantum dynamics simulations of the interacting carriers in disordered systems. <i>Physica Status Solidi (b)</i>, <i>241</i>(1), 40–46. <a href=\"https://doi.org/10.1002/pssb.200303617\">https://doi.org/10.1002/pssb.200303617</a>","ieee":"T. Meier, V. Filinov, P. Thomas, M. Bonitz, V. Fortov, and I. Varga, “Wigner approach to quantum dynamics simulations of the interacting carriers in disordered systems,” <i>physica status solidi (b)</i>, vol. 241, no. 1, pp. 40–46, 2003, doi: <a href=\"https://doi.org/10.1002/pssb.200303617\">10.1002/pssb.200303617</a>.","short":"T. Meier, V. Filinov, P. Thomas, M. Bonitz, V. Fortov, I. Varga, Physica Status Solidi (b) 241 (2003) 40–46.","chicago":"Meier, Torsten, V. Filinov, P. Thomas, M. Bonitz, V. Fortov, and I. Varga. “Wigner Approach to Quantum Dynamics Simulations of the Interacting Carriers in Disordered Systems.” <i>Physica Status Solidi (b)</i> 241, no. 1 (2003): 40–46. <a href=\"https://doi.org/10.1002/pssb.200303617\">https://doi.org/10.1002/pssb.200303617</a>.","mla":"Meier, Torsten, et al. “Wigner Approach to Quantum Dynamics Simulations of the Interacting Carriers in Disordered Systems.” <i>Physica Status Solidi (b)</i>, vol. 241, no. 1, 2003, pp. 40–46, doi:<a href=\"https://doi.org/10.1002/pssb.200303617\">10.1002/pssb.200303617</a>.","ama":"Meier T, Filinov V, Thomas P, Bonitz M, Fortov V, Varga I. Wigner approach to quantum dynamics simulations of the interacting carriers in disordered systems. <i>physica status solidi (b)</i>. 2003;241(1):40-46. doi:<a href=\"https://doi.org/10.1002/pssb.200303617\">10.1002/pssb.200303617</a>","bibtex":"@article{Meier_Filinov_Thomas_Bonitz_Fortov_Varga_2003, title={Wigner approach to quantum dynamics simulations of the interacting carriers in disordered systems}, volume={241}, DOI={<a href=\"https://doi.org/10.1002/pssb.200303617\">10.1002/pssb.200303617</a>}, number={1}, journal={physica status solidi (b)}, author={Meier, Torsten and Filinov, V. and Thomas, P. and Bonitz, M. and Fortov, V. and Varga, I.}, year={2003}, pages={40–46} }"}},{"article_number":"WU1","main_file_link":[{"url":"https://opg.optica.org/abstract.cfm?uri=FiO-2003-WU1"}],"publisher":"Optical Society of America","_id":"44125","language":[{"iso":"eng"}],"user_id":"49063","doi":"10.1364/FIO.2003.WU1","year":"2003","title":"Semiconductor photonic-crystal structures: Optical spectra and carrier dynamics","status":"public","author":[{"full_name":"Meier, Torsten","orcid":"0000-0001-8864-2072","last_name":"Meier","first_name":"Torsten","id":"344"}],"publication_identifier":{"isbn":["1-55752-759-8"]},"conference":{"location":"Tucson, Arizona United States","name":"Frontiers in Optics 2003","start_date":"2003-10-5"},"publication_status":"published","date_updated":"2023-04-24T06:39:25Z","date_created":"2023-04-24T06:39:18Z","type":"conference","department":[{"_id":"293"}],"citation":{"mla":"Meier, Torsten. <i>Semiconductor Photonic-Crystal Structures: Optical Spectra and Carrier Dynamics</i>. WU1, Optical Society of America, 2003, doi:<a href=\"https://doi.org/10.1364/FIO.2003.WU1\">10.1364/FIO.2003.WU1</a>.","ama":"Meier T. Semiconductor photonic-crystal structures: Optical spectra and carrier dynamics. In: Optical Society of America; 2003. doi:<a href=\"https://doi.org/10.1364/FIO.2003.WU1\">10.1364/FIO.2003.WU1</a>","bibtex":"@inproceedings{Meier_2003, title={Semiconductor photonic-crystal structures: Optical spectra and carrier dynamics}, DOI={<a href=\"https://doi.org/10.1364/FIO.2003.WU1\">10.1364/FIO.2003.WU1</a>}, number={WU1}, publisher={Optical Society of America}, author={Meier, Torsten}, year={2003} }","apa":"Meier, T. (2003). <i>Semiconductor photonic-crystal structures: Optical spectra and carrier dynamics</i> (No. WU1). Article WU1. Frontiers in Optics 2003, Tucson, Arizona United States. <a href=\"https://doi.org/10.1364/FIO.2003.WU1\">https://doi.org/10.1364/FIO.2003.WU1</a>","ieee":"T. Meier, “Semiconductor photonic-crystal structures: Optical spectra and carrier dynamics,” presented at the Frontiers in Optics 2003, Tucson, Arizona United States, 2003, doi: <a href=\"https://doi.org/10.1364/FIO.2003.WU1\">10.1364/FIO.2003.WU1</a>.","short":"T. Meier, in: Optical Society of America, 2003.","chicago":"Meier, Torsten. “Semiconductor Photonic-Crystal Structures: Optical Spectra and Carrier Dynamics.” Optical Society of America, 2003. <a href=\"https://doi.org/10.1364/FIO.2003.WU1\">https://doi.org/10.1364/FIO.2003.WU1</a>."},"extern":"1"},{"status":"public","user_id":"49063","volume":238,"page":"525-528","_id":"43287","publisher":"WILEY‐VCH Verlag","citation":{"mla":"Meier, Torsten, et al. “Microscopic Theory for the Nonlinear Optical Response of Semiconductor Surfaces: Application to the Optical Stark Effect of the Si(111)-(2x1) Surface Exciton.” <i>Physica Status Solidi (b)</i>, vol. 238, no. 3, WILEY‐VCH Verlag, 2003, pp. 525–28, doi:<a href=\"https://doi.org/10.1002/pssb.200303180\">10.1002/pssb.200303180</a>.","bibtex":"@article{Meier_Reichelt_Koch_Rohlfing_2003, title={Microscopic theory for the nonlinear optical response of semiconductor surfaces: Application to the optical Stark effect of the Si(111)-(2x1) surface exciton}, volume={238}, DOI={<a href=\"https://doi.org/10.1002/pssb.200303180\">10.1002/pssb.200303180</a>}, number={3}, journal={physica status solidi (b)}, publisher={WILEY‐VCH Verlag}, author={Meier, Torsten and Reichelt, Matthias and Koch, S.W. and Rohlfing, M.}, year={2003}, pages={525–528} }","ama":"Meier T, Reichelt M, Koch SW, Rohlfing M. Microscopic theory for the nonlinear optical response of semiconductor surfaces: Application to the optical Stark effect of the Si(111)-(2x1) surface exciton. <i>physica status solidi (b)</i>. 2003;238(3):525-528. doi:<a href=\"https://doi.org/10.1002/pssb.200303180\">10.1002/pssb.200303180</a>","ieee":"T. Meier, M. Reichelt, S. W. Koch, and M. Rohlfing, “Microscopic theory for the nonlinear optical response of semiconductor surfaces: Application to the optical Stark effect of the Si(111)-(2x1) surface exciton,” <i>physica status solidi (b)</i>, vol. 238, no. 3, pp. 525–528, 2003, doi: <a href=\"https://doi.org/10.1002/pssb.200303180\">10.1002/pssb.200303180</a>.","apa":"Meier, T., Reichelt, M., Koch, S. W., &#38; Rohlfing, M. (2003). Microscopic theory for the nonlinear optical response of semiconductor surfaces: Application to the optical Stark effect of the Si(111)-(2x1) surface exciton. <i>Physica Status Solidi (b)</i>, <i>238</i>(3), 525–528. <a href=\"https://doi.org/10.1002/pssb.200303180\">https://doi.org/10.1002/pssb.200303180</a>","chicago":"Meier, Torsten, Matthias Reichelt, S.W. Koch, and M. Rohlfing. “Microscopic Theory for the Nonlinear Optical Response of Semiconductor Surfaces: Application to the Optical Stark Effect of the Si(111)-(2x1) Surface Exciton.” <i>Physica Status Solidi (b)</i> 238, no. 3 (2003): 525–28. <a href=\"https://doi.org/10.1002/pssb.200303180\">https://doi.org/10.1002/pssb.200303180</a>.","short":"T. Meier, M. Reichelt, S.W. Koch, M. Rohlfing, Physica Status Solidi (b) 238 (2003) 525–528."},"date_updated":"2023-04-02T12:59:02Z","publication_status":"published","intvolume":"       238","year":"2003","title":"Microscopic theory for the nonlinear optical response of semiconductor surfaces: Application to the optical Stark effect of the Si(111)-(2x1) surface exciton","author":[{"full_name":"Meier, Torsten","last_name":"Meier","orcid":"0000-0001-8864-2072","first_name":"Torsten","id":"344"},{"id":"138","full_name":"Reichelt, Matthias","first_name":"Matthias","last_name":"Reichelt"},{"last_name":"Koch","first_name":"S.W.","full_name":"Koch, S.W."},{"last_name":"Rohlfing","first_name":"M.","full_name":"Rohlfing, M."}],"doi":"10.1002/pssb.200303180","main_file_link":[{"url":"https://onlinelibrary.wiley.com/doi/abs/10.1002/pssb.200303180"}],"language":[{"iso":"eng"}],"abstract":[{"lang":"eng","text":"A novel microscopic approach for computing nonlinear optical properties of semiconductor surfaces is outlined. The linear and nonlinear response of the Si(111)-(2×1) surface is studied using a combination of ab-initio band-structure theory and equation of motion technique. The usefulness of the method is shown by reproducing known excitonic effects in the linear differential reflectivity spectrum. To additionally demonstrate the applicability of the approach for the nonlinear regime, the nonlinear optical response in Stark effect configuration is examined."}],"extern":"1","publication":"physica status solidi (b)","issue":"3","type":"journal_article","department":[{"_id":"293"}],"date_created":"2023-04-02T12:58:59Z"},{"publication":"physica status solidi (b)","issue":"3","abstract":[{"text":"Optical properties of a semiconductor quantum well in the vicinity of a two-dimensional photonic crystal are investigated. Due to the periodic spatial modulation of the dielectric environment the effective Coulomb interaction potential exhibits the periodicity of the photonic crystal. As a consequence, the excitonic binding energy varies periodically by up to 50% depending on the spatial position of the exciton relative to the structured dielectric. The self image charge effects result in a position dependent shift of the single-particle bandgap such that the spectral position of the absorption spectrum also develops the periodicity of the photonic surrounding.","lang":"eng"}],"extern":"1","date_created":"2023-04-02T12:56:11Z","type":"journal_article","department":[{"_id":"293"}],"year":"2003","title":"Semiconductor excitons in photonic crystals","author":[{"full_name":"Meier, Torsten","orcid":"0000-0001-8864-2072","first_name":"Torsten","last_name":"Meier","id":"344"},{"full_name":"Eichmann, R.","first_name":"R.","last_name":"Eichmann"},{"first_name":"B.","last_name":"Pasenow","full_name":"Pasenow, B."},{"last_name":"Thomas","first_name":"P.","full_name":"Thomas, P."},{"full_name":"Koch, S.W.","last_name":"Koch","first_name":"S.W."}],"date_updated":"2023-04-02T12:56:14Z","publication_status":"published","intvolume":"       238","main_file_link":[{"url":"https://onlinelibrary.wiley.com/doi/abs/10.1002/pssb.200303159"}],"language":[{"iso":"eng"}],"doi":"10.1002/pssb.200303159","citation":{"ama":"Meier T, Eichmann R, Pasenow B, Thomas P, Koch SW. Semiconductor excitons in photonic crystals. <i>physica status solidi (b)</i>. 2003;238(3):439-442. doi:<a href=\"https://doi.org/10.1002/pssb.200303159\">10.1002/pssb.200303159</a>","bibtex":"@article{Meier_Eichmann_Pasenow_Thomas_Koch_2003, title={Semiconductor excitons in photonic crystals}, volume={238}, DOI={<a href=\"https://doi.org/10.1002/pssb.200303159\">10.1002/pssb.200303159</a>}, number={3}, journal={physica status solidi (b)}, publisher={WILEY‐VCH Verlag}, author={Meier, Torsten and Eichmann, R. and Pasenow, B. and Thomas, P. and Koch, S.W.}, year={2003}, pages={439–442} }","mla":"Meier, Torsten, et al. “Semiconductor Excitons in Photonic Crystals.” <i>Physica Status Solidi (b)</i>, vol. 238, no. 3, WILEY‐VCH Verlag, 2003, pp. 439–42, doi:<a href=\"https://doi.org/10.1002/pssb.200303159\">10.1002/pssb.200303159</a>.","short":"T. Meier, R. Eichmann, B. Pasenow, P. Thomas, S.W. Koch, Physica Status Solidi (b) 238 (2003) 439–442.","chicago":"Meier, Torsten, R. Eichmann, B. Pasenow, P. Thomas, and S.W. Koch. “Semiconductor Excitons in Photonic Crystals.” <i>Physica Status Solidi (b)</i> 238, no. 3 (2003): 439–42. <a href=\"https://doi.org/10.1002/pssb.200303159\">https://doi.org/10.1002/pssb.200303159</a>.","apa":"Meier, T., Eichmann, R., Pasenow, B., Thomas, P., &#38; Koch, S. W. (2003). Semiconductor excitons in photonic crystals. <i>Physica Status Solidi (b)</i>, <i>238</i>(3), 439–442. <a href=\"https://doi.org/10.1002/pssb.200303159\">https://doi.org/10.1002/pssb.200303159</a>","ieee":"T. Meier, R. Eichmann, B. Pasenow, P. Thomas, and S. W. Koch, “Semiconductor excitons in photonic crystals,” <i>physica status solidi (b)</i>, vol. 238, no. 3, pp. 439–442, 2003, doi: <a href=\"https://doi.org/10.1002/pssb.200303159\">10.1002/pssb.200303159</a>."},"status":"public","page":"439-442","_id":"43286","publisher":"WILEY‐VCH Verlag","user_id":"49063","volume":238},{"citation":{"mla":"Eichmann, R., et al. “Semiconductor Absorption in Photonic Crystals.” <i>Applied Physics Letters</i>, vol. 82, no. 3, American Institute of Physics, 2003, pp. 355–57, doi:<a href=\"https://doi.org/10.1063/1.1537455\">10.1063/1.1537455</a>.","bibtex":"@article{Eichmann_Pasenow_Meier_Stroucken_Thomas_Koch_2003, title={Semiconductor absorption in photonic crystals}, volume={82}, DOI={<a href=\"https://doi.org/10.1063/1.1537455\">10.1063/1.1537455</a>}, number={3}, journal={Applied Physics Letters}, publisher={American Institute of Physics}, author={Eichmann, R. and Pasenow, B. and Meier, Torsten and Stroucken, T. and Thomas, P. and Koch, S.W.}, year={2003}, pages={355–357} }","ama":"Eichmann R, Pasenow B, Meier T, Stroucken T, Thomas P, Koch SW. Semiconductor absorption in photonic crystals. <i>Applied Physics Letters</i>. 2003;82(3):355-357. doi:<a href=\"https://doi.org/10.1063/1.1537455\">10.1063/1.1537455</a>","ieee":"R. Eichmann, B. Pasenow, T. Meier, T. Stroucken, P. Thomas, and S. W. Koch, “Semiconductor absorption in photonic crystals,” <i>Applied Physics Letters</i>, vol. 82, no. 3, pp. 355–357, 2003, doi: <a href=\"https://doi.org/10.1063/1.1537455\">10.1063/1.1537455</a>.","apa":"Eichmann, R., Pasenow, B., Meier, T., Stroucken, T., Thomas, P., &#38; Koch, S. W. (2003). Semiconductor absorption in photonic crystals. <i>Applied Physics Letters</i>, <i>82</i>(3), 355–357. <a href=\"https://doi.org/10.1063/1.1537455\">https://doi.org/10.1063/1.1537455</a>","short":"R. Eichmann, B. Pasenow, T. Meier, T. Stroucken, P. Thomas, S.W. Koch, Applied Physics Letters 82 (2003) 355–357.","chicago":"Eichmann, R., B. Pasenow, Torsten Meier, T. Stroucken, P. Thomas, and S.W. Koch. “Semiconductor Absorption in Photonic Crystals.” <i>Applied Physics Letters</i> 82, no. 3 (2003): 355–57. <a href=\"https://doi.org/10.1063/1.1537455\">https://doi.org/10.1063/1.1537455</a>."},"status":"public","_id":"43283","publisher":"American Institute of Physics","page":"355-357","volume":82,"user_id":"49063","publication":"Applied Physics Letters","issue":"3","extern":"1","abstract":[{"lang":"eng","text":"Absorption spectra of semiconductor structures in photonic crystal environments are investigated numerically. It is shown that the periodic dielectric structuring changes the local optical and Coulomb interaction properties of semiconductor electron–hole excitations. The structurally induced modifications offer the possibility to design important aspects of the optoelectronic semiconductor properties."}],"date_created":"2023-04-02T12:39:24Z","department":[{"_id":"293"}],"type":"journal_article","author":[{"full_name":"Eichmann, R.","first_name":"R.","last_name":"Eichmann"},{"last_name":"Pasenow","first_name":"B.","full_name":"Pasenow, B."},{"orcid":"0000-0001-8864-2072","last_name":"Meier","first_name":"Torsten","full_name":"Meier, Torsten","id":"344"},{"last_name":"Stroucken","first_name":"T.","full_name":"Stroucken, T."},{"full_name":"Thomas, P.","last_name":"Thomas","first_name":"P."},{"first_name":"S.W.","last_name":"Koch","full_name":"Koch, S.W."}],"year":"2003","title":"Semiconductor absorption in photonic crystals","intvolume":"        82","publication_status":"published","date_updated":"2023-04-02T12:39:26Z","language":[{"iso":"eng"}],"main_file_link":[{"url":"https://aip.scitation.org/doi/abs/10.1063/1.1537455"}],"doi":"10.1063/1.1537455"},{"language":[{"iso":"eng"}],"main_file_link":[{"open_access":"1","url":"https://www.pro-physik.de/restricted-files/116796"}],"intvolume":"         2","publication_status":"published","date_updated":"2023-04-02T12:43:22Z","author":[{"full_name":"Meier, Torsten","first_name":"Torsten","last_name":"Meier","orcid":"0000-0001-8864-2072","id":"344"},{"full_name":"Thomas, P.","last_name":"Thomas","first_name":"P."}],"title":"Echos in Festkörpern","year":"2003","department":[{"_id":"293"}],"type":"journal_article","date_created":"2023-04-02T12:43:19Z","extern":"1","publication":"Physik Journal","issue":"3","volume":2,"user_id":"49063","_id":"43285","page":"53-59","status":"public","oa":"1","citation":{"ama":"Meier T, Thomas P. Echos in Festkörpern. <i>Physik Journal</i>. 2003;2(3):53-59.","bibtex":"@article{Meier_Thomas_2003, title={Echos in Festkörpern}, volume={2}, number={3}, journal={Physik Journal}, author={Meier, Torsten and Thomas, P.}, year={2003}, pages={53–59} }","mla":"Meier, Torsten, and P. Thomas. “Echos in Festkörpern.” <i>Physik Journal</i>, vol. 2, no. 3, 2003, pp. 53–59.","short":"T. Meier, P. Thomas, Physik Journal 2 (2003) 53–59.","chicago":"Meier, Torsten, and P. Thomas. “Echos in Festkörpern.” <i>Physik Journal</i> 2, no. 3 (2003): 53–59.","apa":"Meier, T., &#38; Thomas, P. (2003). Echos in Festkörpern. <i>Physik Journal</i>, <i>2</i>(3), 53–59.","ieee":"T. Meier and P. Thomas, “Echos in Festkörpern,” <i>Physik Journal</i>, vol. 2, no. 3, pp. 53–59, 2003."}}]