[{"publication":"Microelectronic Engineering","citation":{"apa":"Kähler, D., Kunze, U., Reuter, D., &#38; Wieck, A. D. (2002). Quantum wire fabrication from compensating-layer GaAs–AlGaAs heterostructures. <i>Microelectronic Engineering</i>, 619–623. <a href=\"https://doi.org/10.1016/s0167-9317(02)00474-4\">https://doi.org/10.1016/s0167-9317(02)00474-4</a>","ieee":"D. Kähler, U. Kunze, D. Reuter, and A. D. Wieck, “Quantum wire fabrication from compensating-layer GaAs–AlGaAs heterostructures,” <i>Microelectronic Engineering</i>, pp. 619–623, 2002.","chicago":"Kähler, D., U. Kunze, Dirk Reuter, and A.D. Wieck. “Quantum Wire Fabrication from Compensating-Layer GaAs–AlGaAs Heterostructures.” <i>Microelectronic Engineering</i>, 2002, 619–23. <a href=\"https://doi.org/10.1016/s0167-9317(02)00474-4\">https://doi.org/10.1016/s0167-9317(02)00474-4</a>.","short":"D. Kähler, U. Kunze, D. Reuter, A.D. Wieck, Microelectronic Engineering (2002) 619–623.","mla":"Kähler, D., et al. “Quantum Wire Fabrication from Compensating-Layer GaAs–AlGaAs Heterostructures.” <i>Microelectronic Engineering</i>, 2002, pp. 619–23, doi:<a href=\"https://doi.org/10.1016/s0167-9317(02)00474-4\">10.1016/s0167-9317(02)00474-4</a>.","ama":"Kähler D, Kunze U, Reuter D, Wieck AD. Quantum wire fabrication from compensating-layer GaAs–AlGaAs heterostructures. <i>Microelectronic Engineering</i>. 2002:619-623. doi:<a href=\"https://doi.org/10.1016/s0167-9317(02)00474-4\">10.1016/s0167-9317(02)00474-4</a>","bibtex":"@article{Kähler_Kunze_Reuter_Wieck_2002, title={Quantum wire fabrication from compensating-layer GaAs–AlGaAs heterostructures}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(02)00474-4\">10.1016/s0167-9317(02)00474-4</a>}, journal={Microelectronic Engineering}, author={Kähler, D. and Kunze, U. and Reuter, Dirk and Wieck, A.D.}, year={2002}, pages={619–623} }"},"date_created":"2019-03-28T15:09:49Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"status":"public","title":"Quantum wire fabrication from compensating-layer GaAs–AlGaAs heterostructures","year":"2002","author":[{"full_name":"Kähler, D.","first_name":"D.","last_name":"Kähler"},{"first_name":"U.","last_name":"Kunze","full_name":"Kunze, U."},{"id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter"},{"full_name":"Wieck, A.D.","last_name":"Wieck","first_name":"A.D."}],"publication_identifier":{"issn":["0167-9317"]},"publication_status":"published","date_updated":"2022-01-06T07:04:00Z","page":"619-623","_id":"8733","language":[{"iso":"eng"}],"user_id":"42514","doi":"10.1016/s0167-9317(02)00474-4"},{"publication":"Physica E: Low-dimensional Systems and Nanostructures","citation":{"mla":"Naud, C., et al. “Aharonov–Bohm Cages in the GaAlAs/GaAs System.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2002, pp. 190–96, doi:<a href=\"https://doi.org/10.1016/s1386-9477(01)00307-1\">10.1016/s1386-9477(01)00307-1</a>.","bibtex":"@article{Naud_Faini_Mailly_Vidal_Douçot_Montambaux_Wieck_Reuter_2002, title={Aharonov–Bohm cages in the GaAlAs/GaAs system}, DOI={<a href=\"https://doi.org/10.1016/s1386-9477(01)00307-1\">10.1016/s1386-9477(01)00307-1</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Naud, C. and Faini, G. and Mailly, D. and Vidal, J. and Douçot, B. and Montambaux, G. and Wieck, A. and Reuter, Dirk}, year={2002}, pages={190–196} }","ama":"Naud C, Faini G, Mailly D, et al. Aharonov–Bohm cages in the GaAlAs/GaAs system. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2002:190-196. doi:<a href=\"https://doi.org/10.1016/s1386-9477(01)00307-1\">10.1016/s1386-9477(01)00307-1</a>","ieee":"C. Naud <i>et al.</i>, “Aharonov–Bohm cages in the GaAlAs/GaAs system,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, pp. 190–196, 2002.","apa":"Naud, C., Faini, G., Mailly, D., Vidal, J., Douçot, B., Montambaux, G., … Reuter, D. (2002). Aharonov–Bohm cages in the GaAlAs/GaAs system. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 190–196. <a href=\"https://doi.org/10.1016/s1386-9477(01)00307-1\">https://doi.org/10.1016/s1386-9477(01)00307-1</a>","chicago":"Naud, C., G. Faini, D. Mailly, J. Vidal, B. Douçot, G. Montambaux, A. Wieck, and Dirk Reuter. “Aharonov–Bohm Cages in the GaAlAs/GaAs System.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2002, 190–96. <a href=\"https://doi.org/10.1016/s1386-9477(01)00307-1\">https://doi.org/10.1016/s1386-9477(01)00307-1</a>.","short":"C. Naud, G. Faini, D. Mailly, J. Vidal, B. Douçot, G. Montambaux, A. Wieck, D. Reuter, Physica E: Low-Dimensional Systems and Nanostructures (2002) 190–196."},"date_created":"2019-03-28T15:11:31Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"year":"2002","status":"public","title":"Aharonov–Bohm cages in the GaAlAs/GaAs system","author":[{"full_name":"Naud, C.","first_name":"C.","last_name":"Naud"},{"last_name":"Faini","first_name":"G.","full_name":"Faini, G."},{"full_name":"Mailly, D.","first_name":"D.","last_name":"Mailly"},{"full_name":"Vidal, J.","first_name":"J.","last_name":"Vidal"},{"full_name":"Douçot, B.","last_name":"Douçot","first_name":"B."},{"full_name":"Montambaux, G.","first_name":"G.","last_name":"Montambaux"},{"full_name":"Wieck, A.","first_name":"A.","last_name":"Wieck"},{"id":"37763","first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk"}],"publication_identifier":{"issn":["1386-9477"]},"date_updated":"2022-01-06T07:04:00Z","publication_status":"published","page":"190-196","_id":"8734","language":[{"iso":"eng"}],"doi":"10.1016/s1386-9477(01)00307-1","user_id":"42514"},{"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-03-28T15:12:20Z","publication":"physica status solidi (a)","citation":{"mla":"Pulizzi, F., et al. “Anomalous In-Plane Motion of Excitons in Single GaAs Quantum Wells.” <i>Physica Status Solidi (A)</i>, 2002, pp. 641–45, doi:<a href=\"https://doi.org/10.1002/1521-396x(200204)190:3&#60;641::aid-pssa641&#62;3.0.co;2-r\">10.1002/1521-396x(200204)190:3&#60;641::aid-pssa641&#62;3.0.co;2-r</a>.","ama":"Pulizzi F, Christianen PCM, Maan JC, Eshlaghi S, Reuter D, Wieck AD. Anomalous In-Plane Motion of Excitons in Single GaAs Quantum Wells. <i>physica status solidi (a)</i>. 2002:641-645. doi:<a href=\"https://doi.org/10.1002/1521-396x(200204)190:3&#60;641::aid-pssa641&#62;3.0.co;2-r\">10.1002/1521-396x(200204)190:3&#60;641::aid-pssa641&#62;3.0.co;2-r</a>","bibtex":"@article{Pulizzi_Christianen_Maan_Eshlaghi_Reuter_Wieck_2002, title={Anomalous In-Plane Motion of Excitons in Single GaAs Quantum Wells}, DOI={<a href=\"https://doi.org/10.1002/1521-396x(200204)190:3&#60;641::aid-pssa641&#62;3.0.co;2-r\">10.1002/1521-396x(200204)190:3&#60;641::aid-pssa641&#62;3.0.co;2-r</a>}, journal={physica status solidi (a)}, author={Pulizzi, F. and Christianen, P.C.M. and Maan, J.C. and Eshlaghi, S. and Reuter, Dirk and Wieck, A.D.}, year={2002}, pages={641–645} }","apa":"Pulizzi, F., Christianen, P. C. M., Maan, J. C., Eshlaghi, S., Reuter, D., &#38; Wieck, A. D. (2002). Anomalous In-Plane Motion of Excitons in Single GaAs Quantum Wells. <i>Physica Status Solidi (A)</i>, 641–645. <a href=\"https://doi.org/10.1002/1521-396x(200204)190:3&#60;641::aid-pssa641&#62;3.0.co;2-r\">https://doi.org/10.1002/1521-396x(200204)190:3&#60;641::aid-pssa641&#62;3.0.co;2-r</a>","ieee":"F. Pulizzi, P. C. M. Christianen, J. C. Maan, S. Eshlaghi, D. Reuter, and A. D. Wieck, “Anomalous In-Plane Motion of Excitons in Single GaAs Quantum Wells,” <i>physica status solidi (a)</i>, pp. 641–645, 2002.","short":"F. Pulizzi, P.C.M. Christianen, J.C. Maan, S. Eshlaghi, D. Reuter, A.D. Wieck, Physica Status Solidi (A) (2002) 641–645.","chicago":"Pulizzi, F., P.C.M. Christianen, J.C. Maan, S. Eshlaghi, Dirk Reuter, and A.D. Wieck. “Anomalous In-Plane Motion of Excitons in Single GaAs Quantum Wells.” <i>Physica Status Solidi (A)</i>, 2002, 641–45. <a href=\"https://doi.org/10.1002/1521-396x(200204)190:3&#60;641::aid-pssa641&#62;3.0.co;2-r\">https://doi.org/10.1002/1521-396x(200204)190:3&#60;641::aid-pssa641&#62;3.0.co;2-r</a>."},"user_id":"42514","doi":"10.1002/1521-396x(200204)190:3<641::aid-pssa641>3.0.co;2-r","page":"641-645","language":[{"iso":"eng"}],"_id":"8735","publication_status":"published","date_updated":"2022-01-06T07:04:00Z","status":"public","year":"2002","title":"Anomalous In-Plane Motion of Excitons in Single GaAs Quantum Wells","author":[{"full_name":"Pulizzi, F.","first_name":"F.","last_name":"Pulizzi"},{"first_name":"P.C.M.","last_name":"Christianen","full_name":"Christianen, P.C.M."},{"full_name":"Maan, J.C.","first_name":"J.C.","last_name":"Maan"},{"first_name":"S.","last_name":"Eshlaghi","full_name":"Eshlaghi, S."},{"last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763"},{"first_name":"A.D.","last_name":"Wieck","full_name":"Wieck, A.D."}],"publication_identifier":{"issn":["0031-8965","1521-396X"]}},{"page":"2023-2025","language":[{"iso":"eng"}],"_id":"8736","user_id":"42514","doi":"10.1063/1.1506417","status":"public","title":"Fabrication of quantum point contacts by engraving GaAs/AlGaAs heterostructures with a diamond tip","year":"2002","author":[{"full_name":"Regul, J.","first_name":"J.","last_name":"Regul"},{"first_name":"U. F.","last_name":"Keyser","full_name":"Keyser, U. F."},{"full_name":"Paesler, M.","first_name":"M.","last_name":"Paesler"},{"last_name":"Hohls","first_name":"F.","full_name":"Hohls, F."},{"last_name":"Zeitler","first_name":"U.","full_name":"Zeitler, U."},{"first_name":"R. J.","last_name":"Haug","full_name":"Haug, R. J."},{"full_name":"Malavé, A.","first_name":"A.","last_name":"Malavé"},{"last_name":"Oesterschulze","first_name":"E.","full_name":"Oesterschulze, E."},{"id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter"},{"full_name":"Wieck, A. D.","first_name":"A. D.","last_name":"Wieck"}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","date_updated":"2022-01-06T07:04:00Z","date_created":"2019-03-28T15:13:44Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"publication":"Applied Physics Letters","citation":{"apa":"Regul, J., Keyser, U. F., Paesler, M., Hohls, F., Zeitler, U., Haug, R. J., … Wieck, A. D. (2002). Fabrication of quantum point contacts by engraving GaAs/AlGaAs heterostructures with a diamond tip. <i>Applied Physics Letters</i>, 2023–2025. <a href=\"https://doi.org/10.1063/1.1506417\">https://doi.org/10.1063/1.1506417</a>","ieee":"J. Regul <i>et al.</i>, “Fabrication of quantum point contacts by engraving GaAs/AlGaAs heterostructures with a diamond tip,” <i>Applied Physics Letters</i>, pp. 2023–2025, 2002.","chicago":"Regul, J., U. F. Keyser, M. Paesler, F. Hohls, U. Zeitler, R. J. Haug, A. Malavé, E. Oesterschulze, Dirk Reuter, and A. D. Wieck. “Fabrication of Quantum Point Contacts by Engraving GaAs/AlGaAs Heterostructures with a Diamond Tip.” <i>Applied Physics Letters</i>, 2002, 2023–25. <a href=\"https://doi.org/10.1063/1.1506417\">https://doi.org/10.1063/1.1506417</a>.","short":"J. Regul, U.F. Keyser, M. Paesler, F. Hohls, U. Zeitler, R.J. Haug, A. Malavé, E. Oesterschulze, D. Reuter, A.D. Wieck, Applied Physics Letters (2002) 2023–2025.","mla":"Regul, J., et al. “Fabrication of Quantum Point Contacts by Engraving GaAs/AlGaAs Heterostructures with a Diamond Tip.” <i>Applied Physics Letters</i>, 2002, pp. 2023–25, doi:<a href=\"https://doi.org/10.1063/1.1506417\">10.1063/1.1506417</a>.","ama":"Regul J, Keyser UF, Paesler M, et al. Fabrication of quantum point contacts by engraving GaAs/AlGaAs heterostructures with a diamond tip. <i>Applied Physics Letters</i>. 2002:2023-2025. doi:<a href=\"https://doi.org/10.1063/1.1506417\">10.1063/1.1506417</a>","bibtex":"@article{Regul_Keyser_Paesler_Hohls_Zeitler_Haug_Malavé_Oesterschulze_Reuter_Wieck_2002, title={Fabrication of quantum point contacts by engraving GaAs/AlGaAs heterostructures with a diamond tip}, DOI={<a href=\"https://doi.org/10.1063/1.1506417\">10.1063/1.1506417</a>}, journal={Applied Physics Letters}, author={Regul, J. and Keyser, U. F. and Paesler, M. and Hohls, F. and Zeitler, U. and Haug, R. J. and Malavé, A. and Oesterschulze, E. and Reuter, Dirk and Wieck, A. D.}, year={2002}, pages={2023–2025} }"}},{"language":[{"iso":"eng"}],"_id":"8737","page":"938-941","volume":13,"doi":"10.1016/s1386-9477(02)00239-4","user_id":"20798","publication_identifier":{"issn":["1386-9477"]},"author":[{"last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763"},{"full_name":"Meier, Cedrik","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572","first_name":"Cedrik","id":"20798"},{"last_name":"Seekamp","first_name":"A","full_name":"Seekamp, A"},{"full_name":"Wieck, A.D","last_name":"Wieck","first_name":"A.D"}],"title":"Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping","status":"public","year":"2002","intvolume":"        13","date_updated":"2022-01-06T07:04:00Z","publication_status":"published","date_created":"2019-03-28T15:14:19Z","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","citation":{"ama":"Reuter D, Meier C, Seekamp A, Wieck A. Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2002;13:938-941. doi:<a href=\"https://doi.org/10.1016/s1386-9477(02)00239-4\">10.1016/s1386-9477(02)00239-4</a>","bibtex":"@article{Reuter_Meier_Seekamp_Wieck_2002, title={Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping}, volume={13}, DOI={<a href=\"https://doi.org/10.1016/s1386-9477(02)00239-4\">10.1016/s1386-9477(02)00239-4</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Reuter, Dirk and Meier, Cedrik and Seekamp, A and Wieck, A.D}, year={2002}, pages={938–941} }","mla":"Reuter, Dirk, et al. “Fabrication of Two-Dimensional in-Plane Gate Transistors by Focused Ion Beam Doping.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, vol. 13, 2002, pp. 938–41, doi:<a href=\"https://doi.org/10.1016/s1386-9477(02)00239-4\">10.1016/s1386-9477(02)00239-4</a>.","short":"D. Reuter, C. Meier, A. Seekamp, A.. Wieck, Physica E: Low-Dimensional Systems and Nanostructures 13 (2002) 938–941.","chicago":"Reuter, Dirk, Cedrik Meier, A Seekamp, and A.D Wieck. “Fabrication of Two-Dimensional in-Plane Gate Transistors by Focused Ion Beam Doping.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i> 13 (2002): 938–41. <a href=\"https://doi.org/10.1016/s1386-9477(02)00239-4\">https://doi.org/10.1016/s1386-9477(02)00239-4</a>.","apa":"Reuter, D., Meier, C., Seekamp, A., &#38; Wieck, A. . (2002). Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, <i>13</i>, 938–941. <a href=\"https://doi.org/10.1016/s1386-9477(02)00239-4\">https://doi.org/10.1016/s1386-9477(02)00239-4</a>","ieee":"D. Reuter, C. Meier, A. Seekamp, and A. . Wieck, “Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, vol. 13, pp. 938–941, 2002."},"publication":"Physica E: Low-dimensional Systems and Nanostructures"},{"date_updated":"2022-01-06T07:04:00Z","publication_status":"published","publication_identifier":{"issn":["0921-5107"]},"author":[{"id":"37763","first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk"},{"full_name":"Schafmeister, P","first_name":"P","last_name":"Schafmeister"},{"full_name":"Koch, J","last_name":"Koch","first_name":"J"},{"full_name":"Schmidt, K","first_name":"K","last_name":"Schmidt"},{"full_name":"Wieck, A.D","last_name":"Wieck","first_name":"A.D"}],"title":"Growth of InAs quantum dots on focussed ion beam implanted GaAs(100)","status":"public","year":"2002","doi":"10.1016/s0921-5107(01)00871-6","user_id":"42514","language":[{"iso":"eng"}],"_id":"8738","page":"230-233","citation":{"mla":"Reuter, Dirk, et al. “Growth of InAs Quantum Dots on Focussed Ion Beam Implanted GaAs(100).” <i>Materials Science and Engineering: B</i>, 2002, pp. 230–33, doi:<a href=\"https://doi.org/10.1016/s0921-5107(01)00871-6\">10.1016/s0921-5107(01)00871-6</a>.","ama":"Reuter D, Schafmeister P, Koch J, Schmidt K, Wieck A. Growth of InAs quantum dots on focussed ion beam implanted GaAs(100). <i>Materials Science and Engineering: B</i>. 2002:230-233. doi:<a href=\"https://doi.org/10.1016/s0921-5107(01)00871-6\">10.1016/s0921-5107(01)00871-6</a>","bibtex":"@article{Reuter_Schafmeister_Koch_Schmidt_Wieck_2002, title={Growth of InAs quantum dots on focussed ion beam implanted GaAs(100)}, DOI={<a href=\"https://doi.org/10.1016/s0921-5107(01)00871-6\">10.1016/s0921-5107(01)00871-6</a>}, journal={Materials Science and Engineering: B}, author={Reuter, Dirk and Schafmeister, P and Koch, J and Schmidt, K and Wieck, A.D}, year={2002}, pages={230–233} }","apa":"Reuter, D., Schafmeister, P., Koch, J., Schmidt, K., &#38; Wieck, A. . (2002). Growth of InAs quantum dots on focussed ion beam implanted GaAs(100). <i>Materials Science and Engineering: B</i>, 230–233. <a href=\"https://doi.org/10.1016/s0921-5107(01)00871-6\">https://doi.org/10.1016/s0921-5107(01)00871-6</a>","ieee":"D. Reuter, P. Schafmeister, J. Koch, K. Schmidt, and A. . Wieck, “Growth of InAs quantum dots on focussed ion beam implanted GaAs(100),” <i>Materials Science and Engineering: B</i>, pp. 230–233, 2002.","chicago":"Reuter, Dirk, P Schafmeister, J Koch, K Schmidt, and A.D Wieck. “Growth of InAs Quantum Dots on Focussed Ion Beam Implanted GaAs(100).” <i>Materials Science and Engineering: B</i>, 2002, 230–33. <a href=\"https://doi.org/10.1016/s0921-5107(01)00871-6\">https://doi.org/10.1016/s0921-5107(01)00871-6</a>.","short":"D. Reuter, P. Schafmeister, J. Koch, K. Schmidt, A.. Wieck, Materials Science and Engineering: B (2002) 230–233."},"publication":"Materials Science and Engineering: B","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","date_created":"2019-03-28T15:15:00Z"},{"date_created":"2019-03-28T15:17:30Z","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","citation":{"mla":"Schaapman, M. R., et al. “A Multipurpose Torsional Magnetometer with Optical Detection.” <i>Applied Physics Letters</i>, 2002, pp. 1041–43, doi:<a href=\"https://doi.org/10.1063/1.1498152\">10.1063/1.1498152</a>.","bibtex":"@article{Schaapman_Christianen_Maan_Reuter_Wieck_2002, title={A multipurpose torsional magnetometer with optical detection}, DOI={<a href=\"https://doi.org/10.1063/1.1498152\">10.1063/1.1498152</a>}, journal={Applied Physics Letters}, author={Schaapman, M. R. and Christianen, P. C. M. and Maan, J. C. and Reuter, Dirk and Wieck, A. D.}, year={2002}, pages={1041–1043} }","ama":"Schaapman MR, Christianen PCM, Maan JC, Reuter D, Wieck AD. A multipurpose torsional magnetometer with optical detection. <i>Applied Physics Letters</i>. 2002:1041-1043. doi:<a href=\"https://doi.org/10.1063/1.1498152\">10.1063/1.1498152</a>","ieee":"M. R. Schaapman, P. C. M. Christianen, J. C. Maan, D. Reuter, and A. D. Wieck, “A multipurpose torsional magnetometer with optical detection,” <i>Applied Physics Letters</i>, pp. 1041–1043, 2002.","apa":"Schaapman, M. R., Christianen, P. C. M., Maan, J. C., Reuter, D., &#38; Wieck, A. D. (2002). A multipurpose torsional magnetometer with optical detection. <i>Applied Physics Letters</i>, 1041–1043. <a href=\"https://doi.org/10.1063/1.1498152\">https://doi.org/10.1063/1.1498152</a>","chicago":"Schaapman, M. R., P. C. M. Christianen, J. C. Maan, Dirk Reuter, and A. D. Wieck. “A Multipurpose Torsional Magnetometer with Optical Detection.” <i>Applied Physics Letters</i>, 2002, 1041–43. <a href=\"https://doi.org/10.1063/1.1498152\">https://doi.org/10.1063/1.1498152</a>.","short":"M.R. Schaapman, P.C.M. Christianen, J.C. Maan, D. Reuter, A.D. Wieck, Applied Physics Letters (2002) 1041–1043."},"publication":"Applied Physics Letters","_id":"8740","language":[{"iso":"eng"}],"page":"1041-1043","doi":"10.1063/1.1498152","user_id":"42514","author":[{"full_name":"Schaapman, M. R.","first_name":"M. R.","last_name":"Schaapman"},{"first_name":"P. C. M.","last_name":"Christianen","full_name":"Christianen, P. C. M."},{"full_name":"Maan, J. C.","first_name":"J. C.","last_name":"Maan"},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"full_name":"Wieck, A. D.","first_name":"A. D.","last_name":"Wieck"}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"title":"A multipurpose torsional magnetometer with optical detection","year":"2002","status":"public","date_updated":"2022-01-06T07:04:00Z","publication_status":"published"},{"user_id":"42514","doi":"10.1016/s0921-5107(01)00873-x","page":"238-242","language":[{"iso":"eng"}],"_id":"8741","publication_status":"published","date_updated":"2022-01-06T07:04:00Z","status":"public","year":"2002","title":"Electronic structure of InAs self-assembled quantum dots","author":[{"first_name":"K.H.","last_name":"Schmidt","full_name":"Schmidt, K.H."},{"last_name":"Bock","first_name":"C.","full_name":"Bock, C."},{"first_name":"U.","last_name":"Kunze","full_name":"Kunze, U."},{"full_name":"Khorenko, V.V.","last_name":"Khorenko","first_name":"V.V."},{"last_name":"Malzer","first_name":"S.","full_name":"Malzer, S."},{"full_name":"Döhler, G.H.","first_name":"G.H.","last_name":"Döhler"},{"first_name":"M.","last_name":"Versen","full_name":"Versen, M."},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"full_name":"Wieck, A.D.","last_name":"Wieck","first_name":"A.D."}],"publication_identifier":{"issn":["0921-5107"]},"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-03-28T15:18:09Z","publication":"Materials Science and Engineering: B","citation":{"ieee":"K. H. Schmidt <i>et al.</i>, “Electronic structure of InAs self-assembled quantum dots,” <i>Materials Science and Engineering: B</i>, pp. 238–242, 2002.","mla":"Schmidt, K. H., et al. “Electronic Structure of InAs Self-Assembled Quantum Dots.” <i>Materials Science and Engineering: B</i>, 2002, pp. 238–42, doi:<a href=\"https://doi.org/10.1016/s0921-5107(01)00873-x\">10.1016/s0921-5107(01)00873-x</a>.","apa":"Schmidt, K. H., Bock, C., Kunze, U., Khorenko, V. V., Malzer, S., Döhler, G. H., … Wieck, A. D. (2002). Electronic structure of InAs self-assembled quantum dots. <i>Materials Science and Engineering: B</i>, 238–242. <a href=\"https://doi.org/10.1016/s0921-5107(01)00873-x\">https://doi.org/10.1016/s0921-5107(01)00873-x</a>","bibtex":"@article{Schmidt_Bock_Kunze_Khorenko_Malzer_Döhler_Versen_Reuter_Wieck_2002, title={Electronic structure of InAs self-assembled quantum dots}, DOI={<a href=\"https://doi.org/10.1016/s0921-5107(01)00873-x\">10.1016/s0921-5107(01)00873-x</a>}, journal={Materials Science and Engineering: B}, author={Schmidt, K.H. and Bock, C. and Kunze, U. and Khorenko, V.V. and Malzer, S. and Döhler, G.H. and Versen, M. and Reuter, Dirk and Wieck, A.D.}, year={2002}, pages={238–242} }","short":"K.H. Schmidt, C. Bock, U. Kunze, V.V. Khorenko, S. Malzer, G.H. Döhler, M. Versen, D. Reuter, A.D. Wieck, Materials Science and Engineering: B (2002) 238–242.","ama":"Schmidt KH, Bock C, Kunze U, et al. Electronic structure of InAs self-assembled quantum dots. <i>Materials Science and Engineering: B</i>. 2002:238-242. doi:<a href=\"https://doi.org/10.1016/s0921-5107(01)00873-x\">10.1016/s0921-5107(01)00873-x</a>","chicago":"Schmidt, K.H., C. Bock, U. Kunze, V.V. Khorenko, S. Malzer, G.H. Döhler, M. Versen, Dirk Reuter, and A.D. Wieck. “Electronic Structure of InAs Self-Assembled Quantum Dots.” <i>Materials Science and Engineering: B</i>, 2002, 238–42. <a href=\"https://doi.org/10.1016/s0921-5107(01)00873-x\">https://doi.org/10.1016/s0921-5107(01)00873-x</a>."}},{"date_created":"2019-03-28T15:18:43Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"publication":"Physica E: Low-dimensional Systems and Nanostructures","citation":{"ieee":"F. Schulze-Wischeler, U. Zeitler, F. Hohls, R. J. Haug, D. Reuter, and A. D. Wieck, “Phonon excitation of a two-dimensional electron system around ν=1,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, pp. 474–477, 2002.","apa":"Schulze-Wischeler, F., Zeitler, U., Hohls, F., Haug, R. J., Reuter, D., &#38; Wieck, A. D. (2002). Phonon excitation of a two-dimensional electron system around ν=1. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 474–477. <a href=\"https://doi.org/10.1016/s1386-9477(01)00342-3\">https://doi.org/10.1016/s1386-9477(01)00342-3</a>","mla":"Schulze-Wischeler, F., et al. “Phonon Excitation of a Two-Dimensional Electron System around Ν=1.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2002, pp. 474–77, doi:<a href=\"https://doi.org/10.1016/s1386-9477(01)00342-3\">10.1016/s1386-9477(01)00342-3</a>.","bibtex":"@article{Schulze-Wischeler_Zeitler_Hohls_Haug_Reuter_Wieck_2002, title={Phonon excitation of a two-dimensional electron system around ν=1}, DOI={<a href=\"https://doi.org/10.1016/s1386-9477(01)00342-3\">10.1016/s1386-9477(01)00342-3</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Schulze-Wischeler, F. and Zeitler, U. and Hohls, F. and Haug, R.J. and Reuter, Dirk and Wieck, A.D.}, year={2002}, pages={474–477} }","ama":"Schulze-Wischeler F, Zeitler U, Hohls F, Haug RJ, Reuter D, Wieck AD. Phonon excitation of a two-dimensional electron system around ν=1. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2002:474-477. doi:<a href=\"https://doi.org/10.1016/s1386-9477(01)00342-3\">10.1016/s1386-9477(01)00342-3</a>","short":"F. Schulze-Wischeler, U. Zeitler, F. Hohls, R.J. Haug, D. Reuter, A.D. Wieck, Physica E: Low-Dimensional Systems and Nanostructures (2002) 474–477.","chicago":"Schulze-Wischeler, F., U. Zeitler, F. Hohls, R.J. Haug, Dirk Reuter, and A.D. Wieck. “Phonon Excitation of a Two-Dimensional Electron System around Ν=1.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2002, 474–77. <a href=\"https://doi.org/10.1016/s1386-9477(01)00342-3\">https://doi.org/10.1016/s1386-9477(01)00342-3</a>."},"page":"474-477","_id":"8742","language":[{"iso":"eng"}],"user_id":"42514","doi":"10.1016/s1386-9477(01)00342-3","title":"Phonon excitation of a two-dimensional electron system around ν=1","year":"2002","status":"public","author":[{"last_name":"Schulze-Wischeler","first_name":"F.","full_name":"Schulze-Wischeler, F."},{"first_name":"U.","last_name":"Zeitler","full_name":"Zeitler, U."},{"first_name":"F.","last_name":"Hohls","full_name":"Hohls, F."},{"last_name":"Haug","first_name":"R.J.","full_name":"Haug, R.J."},{"last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763"},{"first_name":"A.D.","last_name":"Wieck","full_name":"Wieck, A.D."}],"publication_identifier":{"issn":["1386-9477"]},"publication_status":"published","date_updated":"2022-01-06T07:04:00Z"},{"user_id":"42514","doi":"10.1016/s1386-9477(01)00506-9","language":[{"iso":"eng"}],"_id":"8743","page":"143-146","publication_status":"published","date_updated":"2022-01-06T07:04:00Z","publication_identifier":{"issn":["1386-9477"]},"author":[{"last_name":"Vitzethum","first_name":"M.","full_name":"Vitzethum, M."},{"last_name":"Schmidt","first_name":"R.","full_name":"Schmidt, R."},{"first_name":"P.","last_name":"Kiesel","full_name":"Kiesel, P."},{"last_name":"Schafmeister","first_name":"P.","full_name":"Schafmeister, P."},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"full_name":"Wieck, A.D.","last_name":"Wieck","first_name":"A.D."},{"full_name":"Döhler, G.H.","first_name":"G.H.","last_name":"Döhler"}],"title":"Quantum dot micro-LEDs for the study of few-dot electroluminescence, fabricated by focussed ion beam","status":"public","year":"2002","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","date_created":"2019-03-28T15:19:16Z","citation":{"apa":"Vitzethum, M., Schmidt, R., Kiesel, P., Schafmeister, P., Reuter, D., Wieck, A. D., &#38; Döhler, G. H. (2002). Quantum dot micro-LEDs for the study of few-dot electroluminescence, fabricated by focussed ion beam. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 143–146. <a href=\"https://doi.org/10.1016/s1386-9477(01)00506-9\">https://doi.org/10.1016/s1386-9477(01)00506-9</a>","mla":"Vitzethum, M., et al. “Quantum Dot Micro-LEDs for the Study of Few-Dot Electroluminescence, Fabricated by Focussed Ion Beam.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2002, pp. 143–46, doi:<a href=\"https://doi.org/10.1016/s1386-9477(01)00506-9\">10.1016/s1386-9477(01)00506-9</a>.","ieee":"M. Vitzethum <i>et al.</i>, “Quantum dot micro-LEDs for the study of few-dot electroluminescence, fabricated by focussed ion beam,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, pp. 143–146, 2002.","short":"M. Vitzethum, R. Schmidt, P. Kiesel, P. Schafmeister, D. Reuter, A.D. Wieck, G.H. Döhler, Physica E: Low-Dimensional Systems and Nanostructures (2002) 143–146.","ama":"Vitzethum M, Schmidt R, Kiesel P, et al. Quantum dot micro-LEDs for the study of few-dot electroluminescence, fabricated by focussed ion beam. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2002:143-146. doi:<a href=\"https://doi.org/10.1016/s1386-9477(01)00506-9\">10.1016/s1386-9477(01)00506-9</a>","chicago":"Vitzethum, M., R. Schmidt, P. Kiesel, P. Schafmeister, Dirk Reuter, A.D. Wieck, and G.H. Döhler. “Quantum Dot Micro-LEDs for the Study of Few-Dot Electroluminescence, Fabricated by Focussed Ion Beam.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2002, 143–46. <a href=\"https://doi.org/10.1016/s1386-9477(01)00506-9\">https://doi.org/10.1016/s1386-9477(01)00506-9</a>.","bibtex":"@article{Vitzethum_Schmidt_Kiesel_Schafmeister_Reuter_Wieck_Döhler_2002, title={Quantum dot micro-LEDs for the study of few-dot electroluminescence, fabricated by focussed ion beam}, DOI={<a href=\"https://doi.org/10.1016/s1386-9477(01)00506-9\">10.1016/s1386-9477(01)00506-9</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Vitzethum, M. and Schmidt, R. and Kiesel, P. and Schafmeister, P. and Reuter, Dirk and Wieck, A.D. and Döhler, G.H.}, year={2002}, pages={143–146} }"},"publication":"Physica E: Low-dimensional Systems and Nanostructures"},{"user_id":"42514","doi":"10.1016/s1386-9477(01)00475-1","page":"570-573","language":[{"iso":"eng"}],"_id":"8744","publication_status":"published","date_updated":"2022-01-06T07:04:00Z","status":"public","year":"2002","title":"A novel photoconductive detector for single photon detection","publication_identifier":{"issn":["1386-9477"]},"author":[{"full_name":"Vitzethum, M.","first_name":"M.","last_name":"Vitzethum"},{"first_name":"R.","last_name":"Schmidt","full_name":"Schmidt, R."},{"last_name":"Kiesel","first_name":"P.","full_name":"Kiesel, P."},{"full_name":"Schafmeister, P.","last_name":"Schafmeister","first_name":"P."},{"full_name":"Koch, J.","last_name":"Koch","first_name":"J."},{"last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763"},{"full_name":"Wieck, A.D.","last_name":"Wieck","first_name":"A.D."},{"last_name":"Döhler","first_name":"G.H.","full_name":"Döhler, G.H."}],"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-03-28T15:19:48Z","publication":"Physica E: Low-dimensional Systems and Nanostructures","citation":{"mla":"Vitzethum, M., et al. “A Novel Photoconductive Detector for Single Photon Detection.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2002, pp. 570–73, doi:<a href=\"https://doi.org/10.1016/s1386-9477(01)00475-1\">10.1016/s1386-9477(01)00475-1</a>.","ama":"Vitzethum M, Schmidt R, Kiesel P, et al. A novel photoconductive detector for single photon detection. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2002:570-573. doi:<a href=\"https://doi.org/10.1016/s1386-9477(01)00475-1\">10.1016/s1386-9477(01)00475-1</a>","bibtex":"@article{Vitzethum_Schmidt_Kiesel_Schafmeister_Koch_Reuter_Wieck_Döhler_2002, title={A novel photoconductive detector for single photon detection}, DOI={<a href=\"https://doi.org/10.1016/s1386-9477(01)00475-1\">10.1016/s1386-9477(01)00475-1</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Vitzethum, M. and Schmidt, R. and Kiesel, P. and Schafmeister, P. and Koch, J. and Reuter, Dirk and Wieck, A.D. and Döhler, G.H.}, year={2002}, pages={570–573} }","apa":"Vitzethum, M., Schmidt, R., Kiesel, P., Schafmeister, P., Koch, J., Reuter, D., … Döhler, G. H. (2002). A novel photoconductive detector for single photon detection. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 570–573. <a href=\"https://doi.org/10.1016/s1386-9477(01)00475-1\">https://doi.org/10.1016/s1386-9477(01)00475-1</a>","ieee":"M. Vitzethum <i>et al.</i>, “A novel photoconductive detector for single photon detection,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, pp. 570–573, 2002.","short":"M. Vitzethum, R. Schmidt, P. Kiesel, P. Schafmeister, J. Koch, D. Reuter, A.D. Wieck, G.H. Döhler, Physica E: Low-Dimensional Systems and Nanostructures (2002) 570–573.","chicago":"Vitzethum, M., R. Schmidt, P. Kiesel, P. Schafmeister, J. Koch, Dirk Reuter, A.D. Wieck, and G.H. Döhler. “A Novel Photoconductive Detector for Single Photon Detection.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2002, 570–73. <a href=\"https://doi.org/10.1016/s1386-9477(01)00475-1\">https://doi.org/10.1016/s1386-9477(01)00475-1</a>."}},{"date_created":"2019-03-29T11:22:52Z","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","citation":{"mla":"Versen, M., et al. “Single-Electron Tunneling through Individual InAs Quantum Dots within a Saddle Point Potential.” <i>Physica Status Solidi (B)</i>, 2002, pp. 669–73, doi:<a href=\"https://doi.org/10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h\">10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h</a>.","bibtex":"@article{Versen_Schmidt_Bock_Reuter_Wieck_Kunze_2002, title={Single-Electron Tunneling through Individual InAs Quantum Dots within a Saddle Point Potential}, DOI={<a href=\"https://doi.org/10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h\">10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h</a>}, journal={physica status solidi (b)}, author={Versen, M. and Schmidt, K.H. and Bock, C. and Reuter, Dirk and Wieck, A.D. and Kunze, U.}, year={2002}, pages={669–673} }","ama":"Versen M, Schmidt KH, Bock C, Reuter D, Wieck AD, Kunze U. Single-Electron Tunneling through Individual InAs Quantum Dots within a Saddle Point Potential. <i>physica status solidi (b)</i>. 2002:669-673. doi:<a href=\"https://doi.org/10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h\">10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h</a>","ieee":"M. Versen, K. H. Schmidt, C. Bock, D. Reuter, A. D. Wieck, and U. Kunze, “Single-Electron Tunneling through Individual InAs Quantum Dots within a Saddle Point Potential,” <i>physica status solidi (b)</i>, pp. 669–673, 2002.","apa":"Versen, M., Schmidt, K. H., Bock, C., Reuter, D., Wieck, A. D., &#38; Kunze, U. (2002). Single-Electron Tunneling through Individual InAs Quantum Dots within a Saddle Point Potential. <i>Physica Status Solidi (B)</i>, 669–673. <a href=\"https://doi.org/10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h\">https://doi.org/10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h</a>","short":"M. Versen, K.H. Schmidt, C. Bock, D. Reuter, A.D. Wieck, U. Kunze, Physica Status Solidi (B) (2002) 669–673.","chicago":"Versen, M., K.H. Schmidt, C. Bock, Dirk Reuter, A.D. Wieck, and U. Kunze. “Single-Electron Tunneling through Individual InAs Quantum Dots within a Saddle Point Potential.” <i>Physica Status Solidi (B)</i>, 2002, 669–73. <a href=\"https://doi.org/10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h\">https://doi.org/10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h</a>."},"publication":"physica status solidi (b)","_id":"8745","language":[{"iso":"eng"}],"page":"669-673","doi":"10.1002/(sici)1521-3951(200104)224:3<669::aid-pssb669>3.3.co;2-h","user_id":"42514","author":[{"first_name":"M.","last_name":"Versen","full_name":"Versen, M."},{"first_name":"K.H.","last_name":"Schmidt","full_name":"Schmidt, K.H."},{"first_name":"C.","last_name":"Bock","full_name":"Bock, C."},{"id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter"},{"full_name":"Wieck, A.D.","first_name":"A.D.","last_name":"Wieck"},{"full_name":"Kunze, U.","first_name":"U.","last_name":"Kunze"}],"publication_identifier":{"issn":["0370-1972","1521-3951"]},"title":"Single-Electron Tunneling through Individual InAs Quantum Dots within a Saddle Point Potential","year":"2002","status":"public","date_updated":"2022-01-06T07:04:00Z","publication_status":"published"},{"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-03-29T11:23:32Z","publication":"Applied Physics Letters","citation":{"apa":"Reuter, D., Meier, C., Álvarez, M. A. S., &#38; Wieck, A. D. (2002). Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices. <i>Applied Physics Letters</i>, 377–379. <a href=\"https://doi.org/10.1063/1.1386618\">https://doi.org/10.1063/1.1386618</a>","ieee":"D. Reuter, C. Meier, M. A. S. Álvarez, and A. D. Wieck, “Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices,” <i>Applied Physics Letters</i>, pp. 377–379, 2002.","chicago":"Reuter, Dirk, C. Meier, M. A. Serrano Álvarez, and A. D. Wieck. “Increased Thermal Budget for Selectively Doped Heterostructures by Employing AlAs/GaAs Superlattices.” <i>Applied Physics Letters</i>, 2002, 377–79. <a href=\"https://doi.org/10.1063/1.1386618\">https://doi.org/10.1063/1.1386618</a>.","short":"D. Reuter, C. Meier, M.A.S. Álvarez, A.D. Wieck, Applied Physics Letters (2002) 377–379.","mla":"Reuter, Dirk, et al. “Increased Thermal Budget for Selectively Doped Heterostructures by Employing AlAs/GaAs Superlattices.” <i>Applied Physics Letters</i>, 2002, pp. 377–79, doi:<a href=\"https://doi.org/10.1063/1.1386618\">10.1063/1.1386618</a>.","ama":"Reuter D, Meier C, Álvarez MAS, Wieck AD. Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices. <i>Applied Physics Letters</i>. 2002:377-379. doi:<a href=\"https://doi.org/10.1063/1.1386618\">10.1063/1.1386618</a>","bibtex":"@article{Reuter_Meier_Álvarez_Wieck_2002, title={Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices}, DOI={<a href=\"https://doi.org/10.1063/1.1386618\">10.1063/1.1386618</a>}, journal={Applied Physics Letters}, author={Reuter, Dirk and Meier, C. and Álvarez, M. A. Serrano and Wieck, A. D.}, year={2002}, pages={377–379} }"},"doi":"10.1063/1.1386618","user_id":"42514","page":"377-379","_id":"8746","language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:04:00Z","publication_status":"published","year":"2002","title":"Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices","status":"public","author":[{"full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter","id":"37763"},{"last_name":"Meier","first_name":"C.","full_name":"Meier, C."},{"last_name":"Álvarez","first_name":"M. A. Serrano","full_name":"Álvarez, M. A. Serrano"},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."}],"publication_identifier":{"issn":["0003-6951","1077-3118"]}},{"doi":"10.1088/0268-1242/16/7/314","user_id":"42514","language":[{"iso":"eng"}],"_id":"8747","page":"603-607","date_updated":"2022-01-06T07:04:00Z","publication_status":"published","author":[{"full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk","id":"37763"},{"last_name":"Kähler","first_name":"D","full_name":"Kähler, D"},{"last_name":"Kunze","first_name":"U","full_name":"Kunze, U"},{"first_name":"A D","last_name":"Wieck","full_name":"Wieck, A D"}],"publication_identifier":{"issn":["0268-1242","1361-6641"]},"title":"Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography","year":"2002","status":"public","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","date_created":"2019-03-29T11:24:11Z","citation":{"short":"D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607.","chicago":"Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” <i>Semiconductor Science and Technology</i>, 2002, 603–7. <a href=\"https://doi.org/10.1088/0268-1242/16/7/314\">https://doi.org/10.1088/0268-1242/16/7/314</a>.","apa":"Reuter, D., Kähler, D., Kunze, U., &#38; Wieck, A. D. (2002). Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. <i>Semiconductor Science and Technology</i>, 603–607. <a href=\"https://doi.org/10.1088/0268-1242/16/7/314\">https://doi.org/10.1088/0268-1242/16/7/314</a>","ieee":"D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,” <i>Semiconductor Science and Technology</i>, pp. 603–607, 2002.","ama":"Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. <i>Semiconductor Science and Technology</i>. 2002:603-607. doi:<a href=\"https://doi.org/10.1088/0268-1242/16/7/314\">10.1088/0268-1242/16/7/314</a>","bibtex":"@article{Reuter_Kähler_Kunze_Wieck_2002, title={Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography}, DOI={<a href=\"https://doi.org/10.1088/0268-1242/16/7/314\">10.1088/0268-1242/16/7/314</a>}, journal={Semiconductor Science and Technology}, author={Reuter, Dirk and Kähler, D and Kunze, U and Wieck, A D}, year={2002}, pages={603–607} }","mla":"Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” <i>Semiconductor Science and Technology</i>, 2002, pp. 603–07, doi:<a href=\"https://doi.org/10.1088/0268-1242/16/7/314\">10.1088/0268-1242/16/7/314</a>."},"publication":"Semiconductor Science and Technology"},{"citation":{"chicago":"Reuter, Dirk, M. Versen, M. D. Schneider, and A. D. Wieck. “Increased Mobility Anisotropy in Selectively Doped AlxGa1−xAs/GaAs Heterostructures with High Electron Densities.” <i>Journal of Applied Physics</i>, 2002, 321–25. <a href=\"https://doi.org/10.1063/1.373660\">https://doi.org/10.1063/1.373660</a>.","short":"D. Reuter, M. Versen, M.D. Schneider, A.D. Wieck, Journal of Applied Physics (2002) 321–325.","ieee":"D. Reuter, M. Versen, M. D. Schneider, and A. D. Wieck, “Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities,” <i>Journal of Applied Physics</i>, pp. 321–325, 2002.","apa":"Reuter, D., Versen, M., Schneider, M. D., &#38; Wieck, A. D. (2002). Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities. <i>Journal of Applied Physics</i>, 321–325. <a href=\"https://doi.org/10.1063/1.373660\">https://doi.org/10.1063/1.373660</a>","bibtex":"@article{Reuter_Versen_Schneider_Wieck_2002, title={Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities}, DOI={<a href=\"https://doi.org/10.1063/1.373660\">10.1063/1.373660</a>}, journal={Journal of Applied Physics}, author={Reuter, Dirk and Versen, M. and Schneider, M. D. and Wieck, A. D.}, year={2002}, pages={321–325} }","ama":"Reuter D, Versen M, Schneider MD, Wieck AD. Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities. <i>Journal of Applied Physics</i>. 2002:321-325. doi:<a href=\"https://doi.org/10.1063/1.373660\">10.1063/1.373660</a>","mla":"Reuter, Dirk, et al. “Increased Mobility Anisotropy in Selectively Doped AlxGa1−xAs/GaAs Heterostructures with High Electron Densities.” <i>Journal of Applied Physics</i>, 2002, pp. 321–25, doi:<a href=\"https://doi.org/10.1063/1.373660\">10.1063/1.373660</a>."},"publication":"Journal of Applied Physics","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","date_created":"2019-04-01T07:33:21Z","date_updated":"2022-01-06T07:04:00Z","publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"author":[{"id":"37763","first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk"},{"last_name":"Versen","first_name":"M.","full_name":"Versen, M."},{"last_name":"Schneider","first_name":"M. D.","full_name":"Schneider, M. D."},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."}],"status":"public","year":"2002","title":"Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities","doi":"10.1063/1.373660","user_id":"42514","language":[{"iso":"eng"}],"_id":"8763","page":"321-325"},{"language":[{"iso":"eng"}],"_id":"8768","page":"603-607","doi":"10.1088/0268-1242/16/7/314","user_id":"42514","author":[{"last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763"},{"full_name":"Kähler, D","last_name":"Kähler","first_name":"D"},{"last_name":"Kunze","first_name":"U","full_name":"Kunze, U"},{"last_name":"Wieck","first_name":"A D","full_name":"Wieck, A D"}],"publication_identifier":{"issn":["0268-1242","1361-6641"]},"title":"Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography","status":"public","year":"2002","date_updated":"2022-01-06T07:04:00Z","publication_status":"published","date_created":"2019-04-01T07:56:38Z","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","citation":{"ama":"Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. <i>Semiconductor Science and Technology</i>. 2002:603-607. doi:<a href=\"https://doi.org/10.1088/0268-1242/16/7/314\">10.1088/0268-1242/16/7/314</a>","bibtex":"@article{Reuter_Kähler_Kunze_Wieck_2002, title={Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography}, DOI={<a href=\"https://doi.org/10.1088/0268-1242/16/7/314\">10.1088/0268-1242/16/7/314</a>}, journal={Semiconductor Science and Technology}, author={Reuter, Dirk and Kähler, D and Kunze, U and Wieck, A D}, year={2002}, pages={603–607} }","mla":"Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” <i>Semiconductor Science and Technology</i>, 2002, pp. 603–07, doi:<a href=\"https://doi.org/10.1088/0268-1242/16/7/314\">10.1088/0268-1242/16/7/314</a>.","short":"D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607.","chicago":"Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” <i>Semiconductor Science and Technology</i>, 2002, 603–7. <a href=\"https://doi.org/10.1088/0268-1242/16/7/314\">https://doi.org/10.1088/0268-1242/16/7/314</a>.","apa":"Reuter, D., Kähler, D., Kunze, U., &#38; Wieck, A. D. (2002). Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. <i>Semiconductor Science and Technology</i>, 603–607. <a href=\"https://doi.org/10.1088/0268-1242/16/7/314\">https://doi.org/10.1088/0268-1242/16/7/314</a>","ieee":"D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,” <i>Semiconductor Science and Technology</i>, pp. 603–607, 2002."},"publication":"Semiconductor Science and Technology"},{"year":"2002","title":"Hot-Electron Effects in Two-Dimensional Hopping with a Large Localization Length","status":"public","publication_identifier":{"issn":["0031-9007","1079-7114"]},"author":[{"full_name":"Gershenson, M. E.","last_name":"Gershenson","first_name":"M. E."},{"full_name":"Khavin, Yu. B.","first_name":"Yu. B.","last_name":"Khavin"},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"full_name":"Schafmeister, P.","last_name":"Schafmeister","first_name":"P."},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."}],"publication_status":"published","date_updated":"2022-01-06T07:04:00Z","page":"1718-1721","language":[{"iso":"eng"}],"_id":"8771","user_id":"42514","doi":"10.1103/physrevlett.85.1718","publication":"Physical Review Letters","citation":{"mla":"Gershenson, M. E., et al. “Hot-Electron Effects in Two-Dimensional Hopping with a Large Localization Length.” <i>Physical Review Letters</i>, 2002, pp. 1718–21, doi:<a href=\"https://doi.org/10.1103/physrevlett.85.1718\">10.1103/physrevlett.85.1718</a>.","bibtex":"@article{Gershenson_Khavin_Reuter_Schafmeister_Wieck_2002, title={Hot-Electron Effects in Two-Dimensional Hopping with a Large Localization Length}, DOI={<a href=\"https://doi.org/10.1103/physrevlett.85.1718\">10.1103/physrevlett.85.1718</a>}, journal={Physical Review Letters}, author={Gershenson, M. E. and Khavin, Yu. B. and Reuter, Dirk and Schafmeister, P. and Wieck, A. D.}, year={2002}, pages={1718–1721} }","ama":"Gershenson ME, Khavin YB, Reuter D, Schafmeister P, Wieck AD. Hot-Electron Effects in Two-Dimensional Hopping with a Large Localization Length. <i>Physical Review Letters</i>. 2002:1718-1721. doi:<a href=\"https://doi.org/10.1103/physrevlett.85.1718\">10.1103/physrevlett.85.1718</a>","ieee":"M. E. Gershenson, Y. B. Khavin, D. Reuter, P. Schafmeister, and A. D. Wieck, “Hot-Electron Effects in Two-Dimensional Hopping with a Large Localization Length,” <i>Physical Review Letters</i>, pp. 1718–1721, 2002.","apa":"Gershenson, M. E., Khavin, Y. B., Reuter, D., Schafmeister, P., &#38; Wieck, A. D. (2002). Hot-Electron Effects in Two-Dimensional Hopping with a Large Localization Length. <i>Physical Review Letters</i>, 1718–1721. <a href=\"https://doi.org/10.1103/physrevlett.85.1718\">https://doi.org/10.1103/physrevlett.85.1718</a>","chicago":"Gershenson, M. E., Yu. B. Khavin, Dirk Reuter, P. Schafmeister, and A. D. Wieck. “Hot-Electron Effects in Two-Dimensional Hopping with a Large Localization Length.” <i>Physical Review Letters</i>, 2002, 1718–21. <a href=\"https://doi.org/10.1103/physrevlett.85.1718\">https://doi.org/10.1103/physrevlett.85.1718</a>.","short":"M.E. Gershenson, Y.B. Khavin, D. Reuter, P. Schafmeister, A.D. Wieck, Physical Review Letters (2002) 1718–1721."},"date_created":"2019-04-01T08:07:13Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}]},{"publication":"Ultramicroscopy","citation":{"short":"M. Versen, B. Klehn, U. Kunze, D. Reuter, A.. Wieck, Ultramicroscopy (2002) 159–163.","chicago":"Versen, M, B Klehn, U Kunze, Dirk Reuter, and A.D Wieck. “Nanoscale Devices Fabricated by Direct Machining of GaAs with an Atomic Force Microscope.” <i>Ultramicroscopy</i>, 2002, 159–63. <a href=\"https://doi.org/10.1016/s0304-3991(99)00127-8\">https://doi.org/10.1016/s0304-3991(99)00127-8</a>.","apa":"Versen, M., Klehn, B., Kunze, U., Reuter, D., &#38; Wieck, A. . (2002). Nanoscale devices fabricated by direct machining of GaAs with an atomic force microscope. <i>Ultramicroscopy</i>, 159–163. <a href=\"https://doi.org/10.1016/s0304-3991(99)00127-8\">https://doi.org/10.1016/s0304-3991(99)00127-8</a>","ieee":"M. Versen, B. Klehn, U. Kunze, D. Reuter, and A. . Wieck, “Nanoscale devices fabricated by direct machining of GaAs with an atomic force microscope,” <i>Ultramicroscopy</i>, pp. 159–163, 2002.","ama":"Versen M, Klehn B, Kunze U, Reuter D, Wieck A. Nanoscale devices fabricated by direct machining of GaAs with an atomic force microscope. <i>Ultramicroscopy</i>. 2002:159-163. doi:<a href=\"https://doi.org/10.1016/s0304-3991(99)00127-8\">10.1016/s0304-3991(99)00127-8</a>","bibtex":"@article{Versen_Klehn_Kunze_Reuter_Wieck_2002, title={Nanoscale devices fabricated by direct machining of GaAs with an atomic force microscope}, DOI={<a href=\"https://doi.org/10.1016/s0304-3991(99)00127-8\">10.1016/s0304-3991(99)00127-8</a>}, journal={Ultramicroscopy}, author={Versen, M and Klehn, B and Kunze, U and Reuter, Dirk and Wieck, A.D}, year={2002}, pages={159–163} }","mla":"Versen, M., et al. “Nanoscale Devices Fabricated by Direct Machining of GaAs with an Atomic Force Microscope.” <i>Ultramicroscopy</i>, 2002, pp. 159–63, doi:<a href=\"https://doi.org/10.1016/s0304-3991(99)00127-8\">10.1016/s0304-3991(99)00127-8</a>."},"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-04-01T08:09:48Z","publication_status":"published","date_updated":"2022-01-06T07:04:00Z","year":"2002","status":"public","title":"Nanoscale devices fabricated by direct machining of GaAs with an atomic force microscope","publication_identifier":{"issn":["0304-3991"]},"author":[{"full_name":"Versen, M","first_name":"M","last_name":"Versen"},{"last_name":"Klehn","first_name":"B","full_name":"Klehn, B"},{"full_name":"Kunze, U","last_name":"Kunze","first_name":"U"},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"full_name":"Wieck, A.D","first_name":"A.D","last_name":"Wieck"}],"user_id":"42514","doi":"10.1016/s0304-3991(99)00127-8","page":"159-163","_id":"8772","language":[{"iso":"eng"}]},{"publication_identifier":{"issn":["0304-3991"]},"author":[{"last_name":"Skaberna","first_name":"S","full_name":"Skaberna, S"},{"full_name":"Versen, M","first_name":"M","last_name":"Versen"},{"last_name":"Klehn","first_name":"B","full_name":"Klehn, B"},{"full_name":"Kunze, U","first_name":"U","last_name":"Kunze"},{"full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk","id":"37763"},{"last_name":"D. Wieck","first_name":"A","full_name":"D. Wieck, A"}],"title":"Fabrication of a quantum point contact by the dynamic plowing technique and wet-chemical etching","year":"2002","status":"public","date_updated":"2022-01-06T07:04:00Z","publication_status":"published","_id":"8773","language":[{"iso":"eng"}],"page":"153-157","doi":"10.1016/s0304-3991(99)00126-6","user_id":"42514","citation":{"mla":"Skaberna, S., et al. “Fabrication of a Quantum Point Contact by the Dynamic Plowing Technique and Wet-Chemical Etching.” <i>Ultramicroscopy</i>, 2002, pp. 153–57, doi:<a href=\"https://doi.org/10.1016/s0304-3991(99)00126-6\">10.1016/s0304-3991(99)00126-6</a>.","bibtex":"@article{Skaberna_Versen_Klehn_Kunze_Reuter_D. Wieck_2002, title={Fabrication of a quantum point contact by the dynamic plowing technique and wet-chemical etching}, DOI={<a href=\"https://doi.org/10.1016/s0304-3991(99)00126-6\">10.1016/s0304-3991(99)00126-6</a>}, journal={Ultramicroscopy}, author={Skaberna, S and Versen, M and Klehn, B and Kunze, U and Reuter, Dirk and D. Wieck, A}, year={2002}, pages={153–157} }","ama":"Skaberna S, Versen M, Klehn B, Kunze U, Reuter D, D. Wieck A. Fabrication of a quantum point contact by the dynamic plowing technique and wet-chemical etching. <i>Ultramicroscopy</i>. 2002:153-157. doi:<a href=\"https://doi.org/10.1016/s0304-3991(99)00126-6\">10.1016/s0304-3991(99)00126-6</a>","ieee":"S. Skaberna, M. Versen, B. Klehn, U. Kunze, D. Reuter, and A. D. Wieck, “Fabrication of a quantum point contact by the dynamic plowing technique and wet-chemical etching,” <i>Ultramicroscopy</i>, pp. 153–157, 2002.","apa":"Skaberna, S., Versen, M., Klehn, B., Kunze, U., Reuter, D., &#38; D. Wieck, A. (2002). Fabrication of a quantum point contact by the dynamic plowing technique and wet-chemical etching. <i>Ultramicroscopy</i>, 153–157. <a href=\"https://doi.org/10.1016/s0304-3991(99)00126-6\">https://doi.org/10.1016/s0304-3991(99)00126-6</a>","chicago":"Skaberna, S, M Versen, B Klehn, U Kunze, Dirk Reuter, and A D. Wieck. “Fabrication of a Quantum Point Contact by the Dynamic Plowing Technique and Wet-Chemical Etching.” <i>Ultramicroscopy</i>, 2002, 153–57. <a href=\"https://doi.org/10.1016/s0304-3991(99)00126-6\">https://doi.org/10.1016/s0304-3991(99)00126-6</a>.","short":"S. Skaberna, M. Versen, B. Klehn, U. Kunze, D. Reuter, A. D. Wieck, Ultramicroscopy (2002) 153–157."},"publication":"Ultramicroscopy","date_created":"2019-04-01T08:12:28Z","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article"},{"user_id":"42514","doi":"10.1016/s1386-9477(99)00354-9","page":"425-429","_id":"8774","language":[{"iso":"eng"}],"publication_status":"published","date_updated":"2022-01-06T07:04:00Z","year":"2002","status":"public","title":"In-plane and perpendicular tunneling through InAs quantum dots","publication_identifier":{"issn":["1386-9477"]},"author":[{"last_name":"Schmidt","first_name":"K.H","full_name":"Schmidt, K.H"},{"first_name":"M","last_name":"Versen","full_name":"Versen, M"},{"first_name":"C","last_name":"Bock","full_name":"Bock, C"},{"first_name":"U","last_name":"Kunze","full_name":"Kunze, U"},{"id":"37763","first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk"},{"full_name":"Wieck, A.D","last_name":"Wieck","first_name":"A.D"}],"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-04-01T08:13:43Z","publication":"Physica E: Low-dimensional Systems and Nanostructures","citation":{"chicago":"Schmidt, K.H, M Versen, C Bock, U Kunze, Dirk Reuter, and A.D Wieck. “In-Plane and Perpendicular Tunneling through InAs Quantum Dots.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2002, 425–29. <a href=\"https://doi.org/10.1016/s1386-9477(99)00354-9\">https://doi.org/10.1016/s1386-9477(99)00354-9</a>.","short":"K.. Schmidt, M. Versen, C. Bock, U. Kunze, D. Reuter, A.. Wieck, Physica E: Low-Dimensional Systems and Nanostructures (2002) 425–429.","ieee":"K. . Schmidt, M. Versen, C. Bock, U. Kunze, D. Reuter, and A. . Wieck, “In-plane and perpendicular tunneling through InAs quantum dots,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, pp. 425–429, 2002.","apa":"Schmidt, K. ., Versen, M., Bock, C., Kunze, U., Reuter, D., &#38; Wieck, A. . (2002). In-plane and perpendicular tunneling through InAs quantum dots. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 425–429. <a href=\"https://doi.org/10.1016/s1386-9477(99)00354-9\">https://doi.org/10.1016/s1386-9477(99)00354-9</a>","bibtex":"@article{Schmidt_Versen_Bock_Kunze_Reuter_Wieck_2002, title={In-plane and perpendicular tunneling through InAs quantum dots}, DOI={<a href=\"https://doi.org/10.1016/s1386-9477(99)00354-9\">10.1016/s1386-9477(99)00354-9</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Schmidt, K.H and Versen, M and Bock, C and Kunze, U and Reuter, Dirk and Wieck, A.D}, year={2002}, pages={425–429} }","ama":"Schmidt K., Versen M, Bock C, Kunze U, Reuter D, Wieck A. In-plane and perpendicular tunneling through InAs quantum dots. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2002:425-429. doi:<a href=\"https://doi.org/10.1016/s1386-9477(99)00354-9\">10.1016/s1386-9477(99)00354-9</a>","mla":"Schmidt, K. .., et al. “In-Plane and Perpendicular Tunneling through InAs Quantum Dots.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2002, pp. 425–29, doi:<a href=\"https://doi.org/10.1016/s1386-9477(99)00354-9\">10.1016/s1386-9477(99)00354-9</a>."}}]