[{"language":[{"iso":"eng"}],"abstract":[{"lang":"eng","text":"Beats in the transient four-wave-mixing signal from strongly inhomogeneously broadened semiconductor quantum wells are observed. Based on their phase and polarization properties, the beats are assigned to biexcitons in the mesoscopically disordered material. With increasing excitation intensity a halving of the beat period is observed and is accurately reproduced by calculations including fifth-order contributions."}],"publication":"Physical Review B","title":"Disorder mediated biexcitonic beats in semiconductor quantum wells","date_created":"2023-04-05T13:48:46Z","publisher":"American Physical Society","year":"1996","issue":"7","extern":"1","user_id":"49063","department":[{"_id":"293"}],"_id":"43416","status":"public","type":"journal_article","main_file_link":[{"url":"https://journals.aps.org/prb/abstract/10.1103/PhysRevB.54.4436"}],"doi":"10.1103/PhysRevB.54.4436","author":[{"orcid":"0000-0001-8864-2072","last_name":"Meier","full_name":"Meier, Torsten","id":"344","first_name":"Torsten"},{"first_name":"T.F.","last_name":"Albrecht","full_name":"Albrecht, T.F."},{"last_name":"Bott","full_name":"Bott, K.","first_name":"K."},{"last_name":"Schulze","full_name":"Schulze, A.","first_name":"A."},{"first_name":"M.","full_name":"Koch, M.","last_name":"Koch"},{"first_name":"S.T.","last_name":"Cundiff","full_name":"Cundiff, S.T."},{"full_name":"Feldmann, J.","last_name":"Feldmann","first_name":"J."},{"last_name":"Stolz","full_name":"Stolz, W.","first_name":"W."},{"full_name":"Thomas, P.","last_name":"Thomas","first_name":"P."},{"full_name":"Koch, S.W.","last_name":"Koch","first_name":"S.W."},{"full_name":"Göbel, E.O.","last_name":"Göbel","first_name":"E.O."}],"volume":54,"date_updated":"2023-04-05T13:48:48Z","citation":{"short":"T. Meier, T.F. Albrecht, K. Bott, A. Schulze, M. Koch, S.T. Cundiff, J. Feldmann, W. Stolz, P. Thomas, S.W. Koch, E.O. Göbel, Physical Review B 54 (1996) 4436–4439.","bibtex":"@article{Meier_Albrecht_Bott_Schulze_Koch_Cundiff_Feldmann_Stolz_Thomas_Koch_et al._1996, title={Disorder mediated biexcitonic beats in semiconductor quantum wells}, volume={54}, DOI={<a href=\"https://doi.org/10.1103/PhysRevB.54.4436\">10.1103/PhysRevB.54.4436</a>}, number={7}, journal={Physical Review B}, publisher={American Physical Society}, author={Meier, Torsten and Albrecht, T.F. and Bott, K. and Schulze, A. and Koch, M. and Cundiff, S.T. and Feldmann, J. and Stolz, W. and Thomas, P. and Koch, S.W. and et al.}, year={1996}, pages={4436–4439} }","mla":"Meier, Torsten, et al. “Disorder Mediated Biexcitonic Beats in Semiconductor Quantum Wells.” <i>Physical Review B</i>, vol. 54, no. 7, American Physical Society, 1996, pp. 4436–39, doi:<a href=\"https://doi.org/10.1103/PhysRevB.54.4436\">10.1103/PhysRevB.54.4436</a>.","apa":"Meier, T., Albrecht, T. F., Bott, K., Schulze, A., Koch, M., Cundiff, S. T., Feldmann, J., Stolz, W., Thomas, P., Koch, S. W., &#38; Göbel, E. O. (1996). Disorder mediated biexcitonic beats in semiconductor quantum wells. <i>Physical Review B</i>, <i>54</i>(7), 4436–4439. <a href=\"https://doi.org/10.1103/PhysRevB.54.4436\">https://doi.org/10.1103/PhysRevB.54.4436</a>","ieee":"T. Meier <i>et al.</i>, “Disorder mediated biexcitonic beats in semiconductor quantum wells,” <i>Physical Review B</i>, vol. 54, no. 7, pp. 4436–4439, 1996, doi: <a href=\"https://doi.org/10.1103/PhysRevB.54.4436\">10.1103/PhysRevB.54.4436</a>.","chicago":"Meier, Torsten, T.F. Albrecht, K. Bott, A. Schulze, M. Koch, S.T. Cundiff, J. Feldmann, et al. “Disorder Mediated Biexcitonic Beats in Semiconductor Quantum Wells.” <i>Physical Review B</i> 54, no. 7 (1996): 4436–39. <a href=\"https://doi.org/10.1103/PhysRevB.54.4436\">https://doi.org/10.1103/PhysRevB.54.4436</a>.","ama":"Meier T, Albrecht TF, Bott K, et al. Disorder mediated biexcitonic beats in semiconductor quantum wells. <i>Physical Review B</i>. 1996;54(7):4436-4439. doi:<a href=\"https://doi.org/10.1103/PhysRevB.54.4436\">10.1103/PhysRevB.54.4436</a>"},"page":"4436-4439","intvolume":"        54","publication_status":"published"},{"issue":"16","year":"1996","publisher":"American Physical Society","date_created":"2023-04-05T13:51:41Z","title":"Femtosecond Spectroscopic Signatures of Electronic Correlations in Conjugated Polyenes and Semiconductor Nanostructures","publication":"Physical review letters","abstract":[{"text":"Electronic correlation effects which can be directly probed by ultrafast four-wave mixing are predicted using the electronic-oscillator representation of conjugated polyenes. Comparison with inorganic semiconductors is made possible since the semiconductor Bloch equations projected onto the lowest exciton are obtained as a limiting case. A sign difference in a nonlinear scattering potential clearly shows up in the Wigner spectrogram representing the time and frequency resolved signal.","lang":"eng"}],"language":[{"iso":"eng"}],"publication_status":"published","intvolume":"        77","page":"3471-3474","citation":{"mla":"Meier, Torsten, and S. Mukamel. “Femtosecond Spectroscopic Signatures of Electronic Correlations in Conjugated Polyenes and Semiconductor Nanostructures.” <i>Physical Review Letters</i>, vol. 77, no. 16, American Physical Society, 1996, pp. 3471–74, doi:<a href=\"https://doi.org/10.1103/PhysRevLett.77.3471\">10.1103/PhysRevLett.77.3471</a>.","short":"T. Meier, S. Mukamel, Physical Review Letters 77 (1996) 3471–3474.","bibtex":"@article{Meier_Mukamel_1996, title={Femtosecond Spectroscopic Signatures of Electronic Correlations in Conjugated Polyenes and Semiconductor Nanostructures}, volume={77}, DOI={<a href=\"https://doi.org/10.1103/PhysRevLett.77.3471\">10.1103/PhysRevLett.77.3471</a>}, number={16}, journal={Physical review letters}, publisher={American Physical Society}, author={Meier, Torsten and Mukamel, S.}, year={1996}, pages={3471–3474} }","apa":"Meier, T., &#38; Mukamel, S. (1996). Femtosecond Spectroscopic Signatures of Electronic Correlations in Conjugated Polyenes and Semiconductor Nanostructures. <i>Physical Review Letters</i>, <i>77</i>(16), 3471–3474. <a href=\"https://doi.org/10.1103/PhysRevLett.77.3471\">https://doi.org/10.1103/PhysRevLett.77.3471</a>","ama":"Meier T, Mukamel S. Femtosecond Spectroscopic Signatures of Electronic Correlations in Conjugated Polyenes and Semiconductor Nanostructures. <i>Physical review letters</i>. 1996;77(16):3471-3474. doi:<a href=\"https://doi.org/10.1103/PhysRevLett.77.3471\">10.1103/PhysRevLett.77.3471</a>","ieee":"T. Meier and S. Mukamel, “Femtosecond Spectroscopic Signatures of Electronic Correlations in Conjugated Polyenes and Semiconductor Nanostructures,” <i>Physical review letters</i>, vol. 77, no. 16, pp. 3471–3474, 1996, doi: <a href=\"https://doi.org/10.1103/PhysRevLett.77.3471\">10.1103/PhysRevLett.77.3471</a>.","chicago":"Meier, Torsten, and S. Mukamel. “Femtosecond Spectroscopic Signatures of Electronic Correlations in Conjugated Polyenes and Semiconductor Nanostructures.” <i>Physical Review Letters</i> 77, no. 16 (1996): 3471–74. <a href=\"https://doi.org/10.1103/PhysRevLett.77.3471\">https://doi.org/10.1103/PhysRevLett.77.3471</a>."},"date_updated":"2023-04-05T13:51:47Z","volume":77,"author":[{"first_name":"Torsten","orcid":"0000-0001-8864-2072","last_name":"Meier","full_name":"Meier, Torsten","id":"344"},{"last_name":"Mukamel","full_name":"Mukamel, S.","first_name":"S."}],"doi":"10.1103/PhysRevLett.77.3471","main_file_link":[{"url":"https://journals.aps.org/prl/abstract/10.1103/PhysRevLett.77.3471"}],"type":"journal_article","status":"public","_id":"43419","department":[{"_id":"293"}],"user_id":"49063","extern":"1"},{"title":"Field-induced exciton ionization studied by four-wave mixing","publisher":"Plenum Press","date_created":"2023-04-14T22:37:36Z","year":"1996","language":[{"iso":"eng"}],"abstract":[{"lang":"eng","text":"The dynamics of carriers induced by electric fields in semiconductor superlattices has received much interest in recent years. Phenomena like Bloch oscillations and negative differential velocity in these structures have been studied using a variety of experimental techniques [1–5]. One particular point of interest has been the transition of the miniband regime to the Bloch oscillation regime with increasing electric field [6,7]. Cw spectra of strongly-coupled superlattices have evidenced that this transition is concomitant with a rapid field-induced ionization of the zero-field miniband exciton [5,8]. While it has been pointed out from the theoretical side that the field-induced ionization process strongly influences the coherent dynamics in the transition region [9], no systematic experimental investigation of the ionization process has been carried out so far. One interesting question that such an investigation could help to answer is to what extent this ionization process differs from the well-documented case of field-induced exciton ionization in bulk semiconductors."}],"publication":"Hot Carriers in Semiconductors","main_file_link":[{"url":"https://link.springer.com/chapter/10.1007/978-1-4613-0401-2_1"}],"conference":{"location":"Chicago","name":"Proceedings of 9th Conference on Hot Carriers, 1995"},"doi":"10.1007/978-1-4613-0401-2_1","date_updated":"2023-04-14T22:37:38Z","author":[{"full_name":"Meier, Torsten","id":"344","last_name":"Meier","orcid":"0000-0001-8864-2072","first_name":"Torsten"},{"first_name":"M.","full_name":"Koch, M.","last_name":"Koch"},{"full_name":"von Plessen, G.","last_name":"von Plessen","first_name":"G."},{"full_name":"Feldmann, J.","last_name":"Feldmann","first_name":"J."},{"full_name":"Koch, S.W.","last_name":"Koch","first_name":"S.W."},{"full_name":"Thomas, P.","last_name":"Thomas","first_name":"P."},{"first_name":"E.O.","full_name":"Göbel, E.O.","last_name":"Göbel"},{"first_name":"K.W.","full_name":"Goosen, K.W.","last_name":"Goosen"},{"full_name":"Kuo, J.M.","last_name":"Kuo","first_name":"J.M."},{"last_name":"Kopf","full_name":"Kopf, R.F.","first_name":"R.F."}],"place":"New York","citation":{"apa":"Meier, T., Koch, M., von Plessen, G., Feldmann, J., Koch, S. W., Thomas, P., Göbel, E. O., Goosen, K. W., Kuo, J. M., &#38; Kopf, R. F. (1996). Field-induced exciton ionization studied by four-wave mixing. In K. Hess (Ed.), <i>Hot Carriers in Semiconductors</i> (pp. 3–6). Plenum Press. <a href=\"https://doi.org/10.1007/978-1-4613-0401-2_1\">https://doi.org/10.1007/978-1-4613-0401-2_1</a>","bibtex":"@inbook{Meier_Koch_von Plessen_Feldmann_Koch_Thomas_Göbel_Goosen_Kuo_Kopf_1996, place={New York}, title={Field-induced exciton ionization studied by four-wave mixing}, DOI={<a href=\"https://doi.org/10.1007/978-1-4613-0401-2_1\">10.1007/978-1-4613-0401-2_1</a>}, booktitle={Hot Carriers in Semiconductors}, publisher={Plenum Press}, author={Meier, Torsten and Koch, M. and von Plessen, G. and Feldmann, J. and Koch, S.W. and Thomas, P. and Göbel, E.O. and Goosen, K.W. and Kuo, J.M. and Kopf, R.F.}, editor={Hess, K.}, year={1996}, pages={3–6} }","mla":"Meier, Torsten, et al. “Field-Induced Exciton Ionization Studied by Four-Wave Mixing.” <i>Hot Carriers in Semiconductors</i>, edited by K. Hess, Plenum Press, 1996, pp. 3–6, doi:<a href=\"https://doi.org/10.1007/978-1-4613-0401-2_1\">10.1007/978-1-4613-0401-2_1</a>.","short":"T. Meier, M. Koch, G. von Plessen, J. Feldmann, S.W. Koch, P. Thomas, E.O. Göbel, K.W. Goosen, J.M. Kuo, R.F. Kopf, in: K. Hess (Ed.), Hot Carriers in Semiconductors, Plenum Press, New York, 1996, pp. 3–6.","chicago":"Meier, Torsten, M. Koch, G. von Plessen, J. Feldmann, S.W. Koch, P. Thomas, E.O. Göbel, K.W. Goosen, J.M. Kuo, and R.F. Kopf. “Field-Induced Exciton Ionization Studied by Four-Wave Mixing.” In <i>Hot Carriers in Semiconductors</i>, edited by K. Hess, 3–6. New York: Plenum Press, 1996. <a href=\"https://doi.org/10.1007/978-1-4613-0401-2_1\">https://doi.org/10.1007/978-1-4613-0401-2_1</a>.","ieee":"T. Meier <i>et al.</i>, “Field-induced exciton ionization studied by four-wave mixing,” in <i>Hot Carriers in Semiconductors</i>, K. Hess, Ed. New York: Plenum Press, 1996, pp. 3–6.","ama":"Meier T, Koch M, von Plessen G, et al. Field-induced exciton ionization studied by four-wave mixing. In: Hess K, ed. <i>Hot Carriers in Semiconductors</i>. Plenum Press; 1996:3-6. doi:<a href=\"https://doi.org/10.1007/978-1-4613-0401-2_1\">10.1007/978-1-4613-0401-2_1</a>"},"page":"3-6","publication_status":"published","publication_identifier":{"isbn":["10.1007/978-1-4613-0401-2_1"]},"extern":"1","_id":"43565","user_id":"49063","department":[{"_id":"293"}],"editor":[{"full_name":"Hess, K.","last_name":"Hess","first_name":"K."}],"status":"public","type":"book_chapter"},{"language":[{"iso":"eng"}],"publication":"Frontiers in Nanoscale Science of Micro/Submicro Devices","title":"Equilibrium and nonequilibrium optical effetcs in semiconductor heterostructures","date_created":"2023-04-15T00:51:33Z","publisher":"Kluver Publ.","year":"1996","extern":"1","alternative_title":["proceedings of the NATO Advanced Study Institute on Frontiers in Nanoscale Science of Micron/Submicron Devices"],"department":[{"_id":"293"}],"series_title":"NATO ASI Series E: Applied Sciences","user_id":"49063","_id":"43615","status":"public","editor":[{"full_name":"Jauho, A.-P.","last_name":"Jauho","first_name":"A.-P."},{"last_name":"Buzeaneva","full_name":"Buzeaneva, E.V.","first_name":"E.V."}],"type":"book_chapter","conference":{"end_date":"1995-08-26","location":"Kiev","name":"Proceedings of NATO-ASI","start_date":"1995-08-16"},"main_file_link":[{"url":"https://books.google.de/books?hl=en&lr=&id=lwjmIoBG1cAC&oi=fnd&pg=PA459&dq=info:LCTh7dWMlyoJ:scholar.google.com&ots=jQfJaz3jAn&sig=Hro0qMz7WEzGjkn-taqzbVTu0Zs&redir_esc=y#v=onepage&q&f=false"}],"volume":328,"author":[{"full_name":"Meier, Torsten","id":"344","last_name":"Meier","orcid":"0000-0001-8864-2072","first_name":"Torsten"},{"first_name":"S.W.","last_name":"Koch","full_name":"Koch, S.W."},{"full_name":"Hader, J.","last_name":"Hader","first_name":"J."},{"first_name":"K.-C","last_name":"Je","full_name":"Je, K.-C"},{"first_name":"F.","full_name":"Rossi, F.","last_name":"Rossi"},{"first_name":"P.","last_name":"Thomas","full_name":"Thomas, P."}],"date_updated":"2023-05-01T11:00:32Z","page":"459-478","intvolume":"       328","citation":{"short":"T. Meier, S.W. Koch, J. Hader, K.-C. Je, F. Rossi, P. Thomas, in: A.-P. Jauho, E.V. Buzeaneva (Eds.), Frontiers in Nanoscale Science of Micro/Submicro Devices, Kluver Publ., Dordrecht, 1996, pp. 459–478.","bibtex":"@inbook{Meier_Koch_Hader_Je_Rossi_Thomas_1996, place={Dordrecht}, series={NATO ASI Series E: Applied Sciences}, title={Equilibrium and nonequilibrium optical effetcs in semiconductor heterostructures}, volume={328}, booktitle={Frontiers in Nanoscale Science of Micro/Submicro Devices}, publisher={Kluver Publ.}, author={Meier, Torsten and Koch, S.W. and Hader, J. and Je, K.-C and Rossi, F. and Thomas, P.}, editor={Jauho, A.-P. and Buzeaneva, E.V.}, year={1996}, pages={459–478}, collection={NATO ASI Series E: Applied Sciences} }","mla":"Meier, Torsten, et al. “Equilibrium and Nonequilibrium Optical Effetcs in Semiconductor Heterostructures.” <i>Frontiers in Nanoscale Science of Micro/Submicro Devices</i>, edited by A.-P. Jauho and E.V. Buzeaneva, vol. 328, Kluver Publ., 1996, pp. 459–78.","apa":"Meier, T., Koch, S. W., Hader, J., Je, K.-C., Rossi, F., &#38; Thomas, P. (1996). Equilibrium and nonequilibrium optical effetcs in semiconductor heterostructures. In A.-P. Jauho &#38; E. V. Buzeaneva (Eds.), <i>Frontiers in Nanoscale Science of Micro/Submicro Devices</i> (Vol. 328, pp. 459–478). Kluver Publ.","ama":"Meier T, Koch SW, Hader J, Je K-C, Rossi F, Thomas P. Equilibrium and nonequilibrium optical effetcs in semiconductor heterostructures. In: Jauho A-P, Buzeaneva EV, eds. <i>Frontiers in Nanoscale Science of Micro/Submicro Devices</i>. Vol 328. NATO ASI Series E: Applied Sciences. Kluver Publ.; 1996:459-478.","chicago":"Meier, Torsten, S.W. Koch, J. Hader, K.-C Je, F. Rossi, and P. Thomas. “Equilibrium and Nonequilibrium Optical Effetcs in Semiconductor Heterostructures.” In <i>Frontiers in Nanoscale Science of Micro/Submicro Devices</i>, edited by A.-P. Jauho and E.V. Buzeaneva, 328:459–78. NATO ASI Series E: Applied Sciences. Dordrecht: Kluver Publ., 1996.","ieee":"T. Meier, S. W. Koch, J. Hader, K.-C. Je, F. Rossi, and P. Thomas, “Equilibrium and nonequilibrium optical effetcs in semiconductor heterostructures,” in <i>Frontiers in Nanoscale Science of Micro/Submicro Devices</i>, vol. 328, A.-P. Jauho and E. V. Buzeaneva, Eds. Dordrecht: Kluver Publ., 1996, pp. 459–478."},"place":"Dordrecht","publication_identifier":{"isbn":["9780792343011"]},"publication_status":"published"},{"place":"New York","page":"157-160","citation":{"ama":"Meier T, Rossi F, Thomas P, Koch SW, Selbmann  PE, Molinari E. Phonon-Induced Suppression of Bloch Oscillations in Semiconductor Superlattices: a Monte Carlo Investigation. In: Hess K, ed. <i>Hot Carriers in Semiconductors</i>. Plenum Press; 1996:157-160. doi:<a href=\"https://doi.org/10.1007/978-1-4613-0401-2_37\">10.1007/978-1-4613-0401-2_37</a>","ieee":"T. Meier, F. Rossi, P. Thomas, S. W. Koch, P. E. Selbmann , and E. Molinari, “Phonon-Induced Suppression of Bloch Oscillations in Semiconductor Superlattices: a Monte Carlo Investigation,” in <i>Hot Carriers in Semiconductors</i>, K. Hess, Ed. New York: Plenum Press, 1996, pp. 157–160.","chicago":"Meier, Torsten, F. Rossi, P. Thomas, S.W. Koch, P.E. Selbmann , and E. Molinari. “Phonon-Induced Suppression of Bloch Oscillations in Semiconductor Superlattices: A Monte Carlo Investigation.” In <i>Hot Carriers in Semiconductors</i>, edited by K. Hess, 157–60. New York: Plenum Press, 1996. <a href=\"https://doi.org/10.1007/978-1-4613-0401-2_37\">https://doi.org/10.1007/978-1-4613-0401-2_37</a>.","bibtex":"@inbook{Meier_Rossi_Thomas_Koch_Selbmann _Molinari_1996, place={New York}, title={Phonon-Induced Suppression of Bloch Oscillations in Semiconductor Superlattices: a Monte Carlo Investigation}, DOI={<a href=\"https://doi.org/10.1007/978-1-4613-0401-2_37\">10.1007/978-1-4613-0401-2_37</a>}, booktitle={Hot Carriers in Semiconductors}, publisher={Plenum Press}, author={Meier, Torsten and Rossi, F. and Thomas, P. and Koch, S.W. and Selbmann , P.E. and Molinari, E.}, editor={Hess, K.}, year={1996}, pages={157–160} }","short":"T. Meier, F. Rossi, P. Thomas, S.W. Koch, P.E. Selbmann , E. Molinari, in: K. Hess (Ed.), Hot Carriers in Semiconductors, Plenum Press, New York, 1996, pp. 157–160.","mla":"Meier, Torsten, et al. “Phonon-Induced Suppression of Bloch Oscillations in Semiconductor Superlattices: A Monte Carlo Investigation.” <i>Hot Carriers in Semiconductors</i>, edited by K. Hess, Plenum Press, 1996, pp. 157–60, doi:<a href=\"https://doi.org/10.1007/978-1-4613-0401-2_37\">10.1007/978-1-4613-0401-2_37</a>.","apa":"Meier, T., Rossi, F., Thomas, P., Koch, S. W., Selbmann , P. E., &#38; Molinari, E. (1996). Phonon-Induced Suppression of Bloch Oscillations in Semiconductor Superlattices: a Monte Carlo Investigation. In K. Hess (Ed.), <i>Hot Carriers in Semiconductors</i> (pp. 157–160). Plenum Press. <a href=\"https://doi.org/10.1007/978-1-4613-0401-2_37\">https://doi.org/10.1007/978-1-4613-0401-2_37</a>"},"publication_identifier":{"isbn":["978-1-4613-8035-1"]},"publication_status":"published","doi":"10.1007/978-1-4613-0401-2_37","conference":{"name":"Proceedings of 9th Conference on Hot Carriers, 1995","location":"Chicago"},"main_file_link":[{"url":"https://link.springer.com/chapter/10.1007/978-1-4613-0401-2_37"}],"date_updated":"2023-05-01T13:34:37Z","author":[{"orcid":"0000-0001-8864-2072","last_name":"Meier","id":"344","full_name":"Meier, Torsten","first_name":"Torsten"},{"full_name":"Rossi, F.","last_name":"Rossi","first_name":"F."},{"first_name":"P.","full_name":"Thomas, P.","last_name":"Thomas"},{"full_name":"Koch, S.W.","last_name":"Koch","first_name":"S.W."},{"first_name":"P.E.","full_name":"Selbmann , P.E.","last_name":"Selbmann "},{"first_name":"E.","full_name":"Molinari, E.","last_name":"Molinari"}],"editor":[{"first_name":"K.","full_name":"Hess, K.","last_name":"Hess"}],"status":"public","type":"book_chapter","extern":"1","_id":"43559","department":[{"_id":"293"}],"user_id":"49063","year":"1996","title":"Phonon-Induced Suppression of Bloch Oscillations in Semiconductor Superlattices: a Monte Carlo Investigation","publisher":"Plenum Press","date_created":"2023-04-14T22:34:28Z","abstract":[{"text":"The progress in the generation of ultrashort laser pulses, together with the development of spectroscopies on this time-scale, has led to a series of experiments which give new insight into the microscopic carrier dynamics in semiconductors. In particular, the energy relaxation of photoexcited carriers has been widely investigated. At the same time, recent progress in the fabrication and characterization of semiconductor heterostructures and superlattices allows a detailed study of a new class of phenomena induced by an applied electric field, such as Bloch oscillations1,2. Both classes of phenomena typically occur on a pico- or femtosecond time-scale, where the coupling between coherent and incoherent phenomena is known to play a dominant role3. Therefore, an adequate theoretical model of the ultrafast dynamics on this time-scale must account for both coherent and incoherent effects on the same kinetic level.","lang":"eng"}],"publication":"Hot Carriers in Semiconductors","language":[{"iso":"eng"}]},{"publication":"Materials Science and Engineering: B","type":"journal_article","status":"public","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"user_id":"16199","_id":"13795","language":[{"iso":"eng"}],"issue":"1-3","publication_identifier":{"issn":["0921-5107"]},"publication_status":"published","page":"158-161","intvolume":"        37","citation":{"apa":"Scholze, A., Schmidt, W. G., Käckell, P., &#38; Bechstedt, F. (1996). Diamond (111) and (100) surface: ab initio study of the atomic and electronic structure. <i>Materials Science and Engineering: B</i>, <i>37</i>(1–3), 158–161. <a href=\"https://doi.org/10.1016/0921-5107(95)01477-2\">https://doi.org/10.1016/0921-5107(95)01477-2</a>","bibtex":"@article{Scholze_Schmidt_Käckell_Bechstedt_1996, title={Diamond (111) and (100) surface: ab initio study of the atomic and electronic structure}, volume={37}, DOI={<a href=\"https://doi.org/10.1016/0921-5107(95)01477-2\">10.1016/0921-5107(95)01477-2</a>}, number={1–3}, journal={Materials Science and Engineering: B}, author={Scholze, A. and Schmidt, Wolf Gero and Käckell, P. and Bechstedt, F.}, year={1996}, pages={158–161} }","mla":"Scholze, A., et al. “Diamond (111) and (100) Surface: Ab Initio Study of the Atomic and Electronic Structure.” <i>Materials Science and Engineering: B</i>, vol. 37, no. 1–3, 1996, pp. 158–61, doi:<a href=\"https://doi.org/10.1016/0921-5107(95)01477-2\">10.1016/0921-5107(95)01477-2</a>.","short":"A. Scholze, W.G. Schmidt, P. Käckell, F. Bechstedt, Materials Science and Engineering: B 37 (1996) 158–161.","ama":"Scholze A, Schmidt WG, Käckell P, Bechstedt F. Diamond (111) and (100) surface: ab initio study of the atomic and electronic structure. <i>Materials Science and Engineering: B</i>. 1996;37(1-3):158-161. doi:<a href=\"https://doi.org/10.1016/0921-5107(95)01477-2\">10.1016/0921-5107(95)01477-2</a>","ieee":"A. Scholze, W. G. Schmidt, P. Käckell, and F. Bechstedt, “Diamond (111) and (100) surface: ab initio study of the atomic and electronic structure,” <i>Materials Science and Engineering: B</i>, vol. 37, no. 1–3, pp. 158–161, 1996, doi: <a href=\"https://doi.org/10.1016/0921-5107(95)01477-2\">10.1016/0921-5107(95)01477-2</a>.","chicago":"Scholze, A., Wolf Gero Schmidt, P. Käckell, and F. 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Phonons at III–V (110) surfaces. <i>Surface Science</i>. 1996;352-354:83-88. doi:<a href=\"https://doi.org/10.1016/0039-6028(95)01095-5\">10.1016/0039-6028(95)01095-5</a>","ieee":"W. G. Schmidt, F. Bechstedt, and G. P. Srivastava, “Phonons at III–V (110) surfaces,” <i>Surface Science</i>, vol. 352–354, pp. 83–88, 1996, doi: <a href=\"https://doi.org/10.1016/0039-6028(95)01095-5\">10.1016/0039-6028(95)01095-5</a>.","chicago":"Schmidt, Wolf Gero, F. Bechstedt, and G.P. Srivastava. “Phonons at III–V (110) Surfaces.” <i>Surface Science</i> 352–354 (1996): 83–88. <a href=\"https://doi.org/10.1016/0039-6028(95)01095-5\">https://doi.org/10.1016/0039-6028(95)01095-5</a>.","apa":"Schmidt, W. G., Bechstedt, F., &#38; Srivastava, G. P. (1996). Phonons at III–V (110) surfaces. <i>Surface Science</i>, <i>352–354</i>, 83–88. <a href=\"https://doi.org/10.1016/0039-6028(95)01095-5\">https://doi.org/10.1016/0039-6028(95)01095-5</a>","bibtex":"@article{Schmidt_Bechstedt_Srivastava_1996, title={Phonons at III–V (110) surfaces}, volume={352–354}, DOI={<a href=\"https://doi.org/10.1016/0039-6028(95)01095-5\">10.1016/0039-6028(95)01095-5</a>}, journal={Surface Science}, author={Schmidt, Wolf Gero and Bechstedt, F. and Srivastava, G.P.}, year={1996}, pages={83–88} }","short":"W.G. Schmidt, F. Bechstedt, G.P. Srivastava, Surface Science 352–354 (1996) 83–88.","mla":"Schmidt, Wolf Gero, et al. “Phonons at III–V (110) Surfaces.” <i>Surface Science</i>, vol. 352–354, 1996, pp. 83–88, doi:<a href=\"https://doi.org/10.1016/0039-6028(95)01095-5\">10.1016/0039-6028(95)01095-5</a>."},"page":"83-88","publication_status":"published","publication_identifier":{"issn":["0039-6028"]},"title":"Phonons at III–V (110) surfaces","doi":"10.1016/0039-6028(95)01095-5","date_updated":"2025-12-16T07:28:58Z","date_created":"2019-10-10T16:11:55Z","author":[{"id":"468","full_name":"Schmidt, Wolf Gero","last_name":"Schmidt","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero"},{"first_name":"F.","last_name":"Bechstedt","full_name":"Bechstedt, F."},{"first_name":"G.P.","full_name":"Srivastava, G.P.","last_name":"Srivastava"}],"volume":"352-354"},{"type":"journal_article","publication":"Surface Science","status":"public","user_id":"16199","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"_id":"13790","language":[{"iso":"eng"}],"funded_apc":"1","publication_status":"published","publication_identifier":{"issn":["0039-6028"]},"citation":{"ama":"Schmidt WG, Käckell P, Bechstedt F. 3d core-level shifts at. <i>Surface Science</i>. 1996;357-358:545-549. doi:<a href=\"https://doi.org/10.1016/0039-6028(96)00220-8\">10.1016/0039-6028(96)00220-8</a>","chicago":"Schmidt, Wolf Gero, P. Käckell, and F. Bechstedt. “3d Core-Level Shifts At.” <i>Surface Science</i> 357–358 (1996): 545–49. <a href=\"https://doi.org/10.1016/0039-6028(96)00220-8\">https://doi.org/10.1016/0039-6028(96)00220-8</a>.","ieee":"W. G. Schmidt, P. Käckell, and F. Bechstedt, “3d core-level shifts at,” <i>Surface Science</i>, vol. 357–358, pp. 545–549, 1996, doi: <a href=\"https://doi.org/10.1016/0039-6028(96)00220-8\">10.1016/0039-6028(96)00220-8</a>.","mla":"Schmidt, Wolf Gero, et al. “3d Core-Level Shifts At.” <i>Surface Science</i>, vol. 357–358, 1996, pp. 545–49, doi:<a href=\"https://doi.org/10.1016/0039-6028(96)00220-8\">10.1016/0039-6028(96)00220-8</a>.","short":"W.G. Schmidt, P. Käckell, F. Bechstedt, Surface Science 357–358 (1996) 545–549.","bibtex":"@article{Schmidt_Käckell_Bechstedt_1996, title={3d core-level shifts at}, volume={357–358}, DOI={<a href=\"https://doi.org/10.1016/0039-6028(96)00220-8\">10.1016/0039-6028(96)00220-8</a>}, journal={Surface Science}, author={Schmidt, Wolf Gero and Käckell, P. and Bechstedt, F.}, year={1996}, pages={545–549} }","apa":"Schmidt, W. G., Käckell, P., &#38; Bechstedt, F. (1996). 3d core-level shifts at. <i>Surface Science</i>, <i>357–358</i>, 545–549. <a href=\"https://doi.org/10.1016/0039-6028(96)00220-8\">https://doi.org/10.1016/0039-6028(96)00220-8</a>"},"page":"545-549","year":"1996","author":[{"first_name":"Wolf Gero","orcid":"0000-0002-2717-5076","last_name":"Schmidt","full_name":"Schmidt, Wolf Gero","id":"468"},{"full_name":"Käckell, P.","last_name":"Käckell","first_name":"P."},{"first_name":"F.","last_name":"Bechstedt","full_name":"Bechstedt, F."}],"date_created":"2019-10-10T16:08:35Z","volume":"357-358","date_updated":"2025-12-16T07:29:40Z","doi":"10.1016/0039-6028(96)00220-8","title":"3d core-level shifts at"},{"publication_identifier":{"issn":["0031-9007","1079-7114"]},"publication_status":"published","issue":"21","year":"1996","page":"4402-4405","intvolume":"        77","citation":{"ama":"Esser N, Shkrebtii AI, Resch-Esser U, et al. Atomic Structure of the Sb-Stabilized GaAs(100)-(2×4) Surface. <i>Physical Review Letters</i>. 1996;77(21):4402-4405. doi:<a href=\"https://doi.org/10.1103/physrevlett.77.4402\">10.1103/physrevlett.77.4402</a>","ieee":"N. Esser <i>et al.</i>, “Atomic Structure of the Sb-Stabilized GaAs(100)-(2×4) Surface,” <i>Physical Review Letters</i>, vol. 77, no. 21, pp. 4402–4405, 1996, doi: <a href=\"https://doi.org/10.1103/physrevlett.77.4402\">10.1103/physrevlett.77.4402</a>.","chicago":"Esser, N., A. I. Shkrebtii, U. Resch-Esser, C. Springer, W. Richter, Wolf Gero Schmidt, F. Bechstedt, and R. Del Sole. “Atomic Structure of the Sb-Stabilized GaAs(100)-(2×4) Surface.” <i>Physical Review Letters</i> 77, no. 21 (1996): 4402–5. <a href=\"https://doi.org/10.1103/physrevlett.77.4402\">https://doi.org/10.1103/physrevlett.77.4402</a>.","short":"N. Esser, A.I. Shkrebtii, U. Resch-Esser, C. Springer, W. Richter, W.G. Schmidt, F. Bechstedt, R. Del Sole, Physical Review Letters 77 (1996) 4402–4405.","mla":"Esser, N., et al. “Atomic Structure of the Sb-Stabilized GaAs(100)-(2×4) Surface.” <i>Physical Review Letters</i>, vol. 77, no. 21, 1996, pp. 4402–05, doi:<a href=\"https://doi.org/10.1103/physrevlett.77.4402\">10.1103/physrevlett.77.4402</a>.","bibtex":"@article{Esser_Shkrebtii_Resch-Esser_Springer_Richter_Schmidt_Bechstedt_Del Sole_1996, title={Atomic Structure of the Sb-Stabilized GaAs(100)-(2×4) Surface}, volume={77}, DOI={<a href=\"https://doi.org/10.1103/physrevlett.77.4402\">10.1103/physrevlett.77.4402</a>}, number={21}, journal={Physical Review Letters}, author={Esser, N. and Shkrebtii, A. I. and Resch-Esser, U. and Springer, C. and Richter, W. and Schmidt, Wolf Gero and Bechstedt, F. and Del Sole, R.}, year={1996}, pages={4402–4405} }","apa":"Esser, N., Shkrebtii, A. I., Resch-Esser, U., Springer, C., Richter, W., Schmidt, W. G., Bechstedt, F., &#38; Del Sole, R. (1996). Atomic Structure of the Sb-Stabilized GaAs(100)-(2×4) Surface. <i>Physical Review Letters</i>, <i>77</i>(21), 4402–4405. <a href=\"https://doi.org/10.1103/physrevlett.77.4402\">https://doi.org/10.1103/physrevlett.77.4402</a>"},"date_updated":"2025-12-16T07:32:43Z","volume":77,"author":[{"full_name":"Esser, N.","last_name":"Esser","first_name":"N."},{"full_name":"Shkrebtii, A. I.","last_name":"Shkrebtii","first_name":"A. I."},{"full_name":"Resch-Esser, U.","last_name":"Resch-Esser","first_name":"U."},{"last_name":"Springer","full_name":"Springer, C.","first_name":"C."},{"first_name":"W.","full_name":"Richter, W.","last_name":"Richter"},{"full_name":"Schmidt, Wolf Gero","id":"468","last_name":"Schmidt","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero"},{"last_name":"Bechstedt","full_name":"Bechstedt, F.","first_name":"F."},{"last_name":"Del Sole","full_name":"Del Sole, R.","first_name":"R."}],"date_created":"2019-10-10T15:49:26Z","title":"Atomic Structure of the Sb-Stabilized GaAs(100)-(2×4) Surface","doi":"10.1103/physrevlett.77.4402","publication":"Physical Review Letters","type":"journal_article","status":"public","_id":"13782","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"user_id":"16199","funded_apc":"1","language":[{"iso":"eng"}]},{"department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"user_id":"16199","_id":"13784","language":[{"iso":"eng"}],"funded_apc":"1","publication":"Physical Review Letters","type":"journal_article","status":"public","volume":77,"date_created":"2019-10-10T15:53:07Z","author":[{"first_name":"Paulo V.","full_name":"Santos, Paulo V.","last_name":"Santos"},{"last_name":"Koopmans","full_name":"Koopmans, B.","first_name":"B."},{"first_name":"N.","full_name":"Esser, N.","last_name":"Esser"},{"first_name":"Wolf Gero","orcid":"0000-0002-2717-5076","last_name":"Schmidt","id":"468","full_name":"Schmidt, Wolf Gero"},{"full_name":"Bechstedt, F.","last_name":"Bechstedt","first_name":"F."}],"date_updated":"2025-12-16T07:32:03Z","doi":"10.1103/physrevlett.77.759","title":"Optical Properties of Ordered As Layers on InP(110) Surfaces","issue":"4","publication_identifier":{"issn":["0031-9007","1079-7114"]},"publication_status":"published","page":"759-762","intvolume":"        77","citation":{"chicago":"Santos, Paulo V., B. Koopmans, N. Esser, Wolf Gero Schmidt, and F. Bechstedt. “Optical Properties of Ordered As Layers on InP(110) Surfaces.” <i>Physical Review Letters</i> 77, no. 4 (1996): 759–62. <a href=\"https://doi.org/10.1103/physrevlett.77.759\">https://doi.org/10.1103/physrevlett.77.759</a>.","ieee":"P. V. Santos, B. Koopmans, N. Esser, W. G. Schmidt, and F. Bechstedt, “Optical Properties of Ordered As Layers on InP(110) Surfaces,” <i>Physical Review Letters</i>, vol. 77, no. 4, pp. 759–762, 1996, doi: <a href=\"https://doi.org/10.1103/physrevlett.77.759\">10.1103/physrevlett.77.759</a>.","ama":"Santos PV, Koopmans B, Esser N, Schmidt WG, Bechstedt F. Optical Properties of Ordered As Layers on InP(110) Surfaces. <i>Physical Review Letters</i>. 1996;77(4):759-762. doi:<a href=\"https://doi.org/10.1103/physrevlett.77.759\">10.1103/physrevlett.77.759</a>","bibtex":"@article{Santos_Koopmans_Esser_Schmidt_Bechstedt_1996, title={Optical Properties of Ordered As Layers on InP(110) Surfaces}, volume={77}, DOI={<a href=\"https://doi.org/10.1103/physrevlett.77.759\">10.1103/physrevlett.77.759</a>}, number={4}, journal={Physical Review Letters}, author={Santos, Paulo V. and Koopmans, B. and Esser, N. and Schmidt, Wolf Gero and Bechstedt, F.}, year={1996}, pages={759–762} }","short":"P.V. Santos, B. Koopmans, N. Esser, W.G. Schmidt, F. Bechstedt, Physical Review Letters 77 (1996) 759–762.","mla":"Santos, Paulo V., et al. “Optical Properties of Ordered As Layers on InP(110) Surfaces.” <i>Physical Review Letters</i>, vol. 77, no. 4, 1996, pp. 759–62, doi:<a href=\"https://doi.org/10.1103/physrevlett.77.759\">10.1103/physrevlett.77.759</a>.","apa":"Santos, P. V., Koopmans, B., Esser, N., Schmidt, W. G., &#38; Bechstedt, F. (1996). Optical Properties of Ordered As Layers on InP(110) Surfaces. <i>Physical Review Letters</i>, <i>77</i>(4), 759–762. <a href=\"https://doi.org/10.1103/physrevlett.77.759\">https://doi.org/10.1103/physrevlett.77.759</a>"},"year":"1996"},{"user_id":"16199","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"_id":"13783","language":[{"iso":"eng"}],"funded_apc":"1","type":"journal_article","publication":"Physical Review B","status":"public","date_created":"2019-10-10T15:51:29Z","author":[{"id":"468","full_name":"Schmidt, Wolf Gero","last_name":"Schmidt","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero"},{"first_name":"F.","full_name":"Bechstedt, F.","last_name":"Bechstedt"}],"volume":54,"date_updated":"2025-12-16T07:32:21Z","doi":"10.1103/physrevb.54.16742","title":"Geometry and electronic structure of GaAs(001)(2×4) reconstructions","issue":"23","publication_status":"published","publication_identifier":{"issn":["0163-1829","1095-3795"]},"citation":{"apa":"Schmidt, W. G., &#38; Bechstedt, F. (1996). Geometry and electronic structure of GaAs(001)(2×4) reconstructions. <i>Physical Review B</i>, <i>54</i>(23), 16742–16748. <a href=\"https://doi.org/10.1103/physrevb.54.16742\">https://doi.org/10.1103/physrevb.54.16742</a>","bibtex":"@article{Schmidt_Bechstedt_1996, title={Geometry and electronic structure of GaAs(001)(2×4) reconstructions}, volume={54}, DOI={<a href=\"https://doi.org/10.1103/physrevb.54.16742\">10.1103/physrevb.54.16742</a>}, number={23}, journal={Physical Review B}, author={Schmidt, Wolf Gero and Bechstedt, F.}, year={1996}, pages={16742–16748} }","mla":"Schmidt, Wolf Gero, and F. Bechstedt. “Geometry and Electronic Structure of GaAs(001)(2×4) Reconstructions.” <i>Physical Review B</i>, vol. 54, no. 23, 1996, pp. 16742–48, doi:<a href=\"https://doi.org/10.1103/physrevb.54.16742\">10.1103/physrevb.54.16742</a>.","short":"W.G. Schmidt, F. Bechstedt, Physical Review B 54 (1996) 16742–16748.","chicago":"Schmidt, Wolf Gero, and F. Bechstedt. “Geometry and Electronic Structure of GaAs(001)(2×4) Reconstructions.” <i>Physical Review B</i> 54, no. 23 (1996): 16742–48. <a href=\"https://doi.org/10.1103/physrevb.54.16742\">https://doi.org/10.1103/physrevb.54.16742</a>.","ieee":"W. G. Schmidt and F. Bechstedt, “Geometry and electronic structure of GaAs(001)(2×4) reconstructions,” <i>Physical Review B</i>, vol. 54, no. 23, pp. 16742–16748, 1996, doi: <a href=\"https://doi.org/10.1103/physrevb.54.16742\">10.1103/physrevb.54.16742</a>.","ama":"Schmidt WG, Bechstedt F. Geometry and electronic structure of GaAs(001)(2×4) reconstructions. <i>Physical Review B</i>. 1996;54(23):16742-16748. doi:<a href=\"https://doi.org/10.1103/physrevb.54.16742\">10.1103/physrevb.54.16742</a>"},"intvolume":"        54","page":"16742-16748","year":"1996"},{"user_id":"16199","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"_id":"13786","language":[{"iso":"eng"}],"funded_apc":"1","type":"journal_article","publication":"Europhysics Letters (EPL)","status":"public","author":[{"first_name":"F","full_name":"Bechstedt, F","last_name":"Bechstedt"},{"orcid":"0000-0002-2717-5076","last_name":"Schmidt","full_name":"Schmidt, Wolf Gero","id":"468","first_name":"Wolf Gero"},{"first_name":"A","full_name":"Scholze, A","last_name":"Scholze"}],"date_created":"2019-10-10T15:56:01Z","volume":35,"date_updated":"2025-12-16T07:31:20Z","doi":"10.1209/epl/i1996-00155-0","title":"Adatoms and vacancies on the diamond(111) surface","issue":"8","publication_status":"published","publication_identifier":{"issn":["0295-5075","1286-4854"]},"citation":{"ieee":"F. Bechstedt, W. G. Schmidt, and A. Scholze, “Adatoms and vacancies on the diamond(111) surface,” <i>Europhysics Letters (EPL)</i>, vol. 35, no. 8, pp. 585–590, 1996, doi: <a href=\"https://doi.org/10.1209/epl/i1996-00155-0\">10.1209/epl/i1996-00155-0</a>.","chicago":"Bechstedt, F, Wolf Gero Schmidt, and A Scholze. “Adatoms and Vacancies on the Diamond(111) Surface.” <i>Europhysics Letters (EPL)</i> 35, no. 8 (1996): 585–90. <a href=\"https://doi.org/10.1209/epl/i1996-00155-0\">https://doi.org/10.1209/epl/i1996-00155-0</a>.","ama":"Bechstedt F, Schmidt WG, Scholze A. Adatoms and vacancies on the diamond(111) surface. <i>Europhysics Letters (EPL)</i>. 1996;35(8):585-590. doi:<a href=\"https://doi.org/10.1209/epl/i1996-00155-0\">10.1209/epl/i1996-00155-0</a>","apa":"Bechstedt, F., Schmidt, W. G., &#38; Scholze, A. (1996). Adatoms and vacancies on the diamond(111) surface. <i>Europhysics Letters (EPL)</i>, <i>35</i>(8), 585–590. <a href=\"https://doi.org/10.1209/epl/i1996-00155-0\">https://doi.org/10.1209/epl/i1996-00155-0</a>","mla":"Bechstedt, F., et al. “Adatoms and Vacancies on the Diamond(111) Surface.” <i>Europhysics Letters (EPL)</i>, vol. 35, no. 8, 1996, pp. 585–90, doi:<a href=\"https://doi.org/10.1209/epl/i1996-00155-0\">10.1209/epl/i1996-00155-0</a>.","short":"F. Bechstedt, W.G. Schmidt, A. Scholze, Europhysics Letters (EPL) 35 (1996) 585–590.","bibtex":"@article{Bechstedt_Schmidt_Scholze_1996, title={Adatoms and vacancies on the diamond(111) surface}, volume={35}, DOI={<a href=\"https://doi.org/10.1209/epl/i1996-00155-0\">10.1209/epl/i1996-00155-0</a>}, number={8}, journal={Europhysics Letters (EPL)}, author={Bechstedt, F and Schmidt, Wolf Gero and Scholze, A}, year={1996}, pages={585–590} }"},"page":"585-590","intvolume":"        35","year":"1996"},{"page":"L473-L477","intvolume":"       360","citation":{"short":"W.G. Schmidt, F. Bechstedt, Surface Science 360 (1996) L473–L477.","mla":"Schmidt, Wolf Gero, and F. Bechstedt. “Atomic Structures of GaAs(100)-(2 × 4) Reconstructions.” <i>Surface Science</i>, vol. 360, no. 1, 1996, pp. L473–77, doi:<a href=\"https://doi.org/10.1016/0039-6028(96)00728-5\">10.1016/0039-6028(96)00728-5</a>.","bibtex":"@article{Schmidt_Bechstedt_1996, title={Atomic structures of GaAs(100)-(2 × 4) reconstructions}, volume={360}, DOI={<a href=\"https://doi.org/10.1016/0039-6028(96)00728-5\">10.1016/0039-6028(96)00728-5</a>}, number={1}, journal={Surface Science}, author={Schmidt, Wolf Gero and Bechstedt, F.}, year={1996}, pages={L473–L477} }","apa":"Schmidt, W. G., &#38; Bechstedt, F. (1996). Atomic structures of GaAs(100)-(2 × 4) reconstructions. <i>Surface Science</i>, <i>360</i>(1), L473–L477. <a href=\"https://doi.org/10.1016/0039-6028(96)00728-5\">https://doi.org/10.1016/0039-6028(96)00728-5</a>","ama":"Schmidt WG, Bechstedt F. Atomic structures of GaAs(100)-(2 × 4) reconstructions. <i>Surface Science</i>. 1996;360(1):L473-L477. doi:<a href=\"https://doi.org/10.1016/0039-6028(96)00728-5\">10.1016/0039-6028(96)00728-5</a>","ieee":"W. G. Schmidt and F. Bechstedt, “Atomic structures of GaAs(100)-(2 × 4) reconstructions,” <i>Surface Science</i>, vol. 360, no. 1, pp. L473–L477, 1996, doi: <a href=\"https://doi.org/10.1016/0039-6028(96)00728-5\">10.1016/0039-6028(96)00728-5</a>.","chicago":"Schmidt, Wolf Gero, and F. Bechstedt. “Atomic Structures of GaAs(100)-(2 × 4) Reconstructions.” <i>Surface Science</i> 360, no. 1 (1996): L473–77. <a href=\"https://doi.org/10.1016/0039-6028(96)00728-5\">https://doi.org/10.1016/0039-6028(96)00728-5</a>."},"year":"1996","issue":"1","publication_identifier":{"issn":["0039-6028"]},"publication_status":"published","doi":"10.1016/0039-6028(96)00728-5","title":"Atomic structures of GaAs(100)-(2 × 4) reconstructions","volume":360,"date_created":"2019-10-10T15:54:38Z","author":[{"last_name":"Schmidt","orcid":"0000-0002-2717-5076","full_name":"Schmidt, Wolf Gero","id":"468","first_name":"Wolf Gero"},{"first_name":"F.","last_name":"Bechstedt","full_name":"Bechstedt, F."}],"date_updated":"2025-12-16T07:31:43Z","status":"public","publication":"Surface Science","type":"journal_article","funded_apc":"1","language":[{"iso":"eng"}],"department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"user_id":"16199","_id":"13785"},{"publication":"Physical Review B","type":"journal_article","status":"public","abstract":[{"text":"Coherent effects are analyzed that are induced by homogeneous electric fields in photoexcited semiconductors. Extended semiconductor Bloch equations are presented, which include the applied electric field, in addition to the many-body Coulomb contributions in the time-dependent Hartree-Fock approximation. These equations are solved for a one-dimensional tight-binding model of a semiconductor superlattice. Linear and nonlinear optical signals associated with the coherent field-induced effects are calculated. For the case of a static electric field, the influence of the Coulomb interaction, which is treated on the Hartree-Fock level for a contact potential approximation, on the Bloch oscillations, and on their counterpart in the frequency domain, the Wannier-Stark-ladder, is analyzed. For a time-dependent electric field, dynamic localization, i.e., the localization of electrons due to an oscillating electric field, is analyzed. It is predicted that the dynamic localization should be observable in semiconductor superlattices even in the presence of Coulomb interaction.","lang":"eng"}],"department":[{"_id":"293"}],"user_id":"49063","_id":"43578","language":[{"iso":"eng"}],"extern":"1","issue":"20","publication_status":"published","intvolume":"        51","page":"14490-14497","citation":{"apa":"Meier, T., von Plessen, G., Thomas, P., &#38; Koch, S. W. (1995). Coherent effects induced by static and time-dependent electric fields in semiconductors. <i>Physical Review B</i>, <i>51</i>(20), 14490–14497. <a href=\"https://doi.org/10.1103/PhysRevB.51.14490\">https://doi.org/10.1103/PhysRevB.51.14490</a>","mla":"Meier, Torsten, et al. “Coherent Effects Induced by Static and Time-Dependent Electric Fields in Semiconductors.” <i>Physical Review B</i>, vol. 51, no. 20, American Physical Society, 1995, pp. 14490–97, doi:<a href=\"https://doi.org/10.1103/PhysRevB.51.14490\">10.1103/PhysRevB.51.14490</a>.","short":"T. Meier, G. von Plessen, P. Thomas, S.W. Koch, Physical Review B 51 (1995) 14490–14497.","bibtex":"@article{Meier_von Plessen_Thomas_Koch_1995, title={Coherent effects induced by static and time-dependent electric fields in semiconductors}, volume={51}, DOI={<a href=\"https://doi.org/10.1103/PhysRevB.51.14490\">10.1103/PhysRevB.51.14490</a>}, number={20}, journal={Physical Review B}, publisher={American Physical Society}, author={Meier, Torsten and von Plessen, G. and Thomas, P. and Koch, S.W.}, year={1995}, pages={14490–14497} }","ama":"Meier T, von Plessen G, Thomas P, Koch SW. Coherent effects induced by static and time-dependent electric fields in semiconductors. <i>Physical Review B</i>. 1995;51(20):14490-14497. doi:<a href=\"https://doi.org/10.1103/PhysRevB.51.14490\">10.1103/PhysRevB.51.14490</a>","chicago":"Meier, Torsten, G. von Plessen, P. Thomas, and S.W. Koch. “Coherent Effects Induced by Static and Time-Dependent Electric Fields in Semiconductors.” <i>Physical Review B</i> 51, no. 20 (1995): 14490–97. <a href=\"https://doi.org/10.1103/PhysRevB.51.14490\">https://doi.org/10.1103/PhysRevB.51.14490</a>.","ieee":"T. Meier, G. von Plessen, P. Thomas, and S. W. Koch, “Coherent effects induced by static and time-dependent electric fields in semiconductors,” <i>Physical Review B</i>, vol. 51, no. 20, pp. 14490–14497, 1995, doi: <a href=\"https://doi.org/10.1103/PhysRevB.51.14490\">10.1103/PhysRevB.51.14490</a>."},"year":"1995","volume":51,"author":[{"first_name":"Torsten","last_name":"Meier","orcid":"0000-0001-8864-2072","id":"344","full_name":"Meier, Torsten"},{"first_name":"G.","last_name":"von Plessen","full_name":"von Plessen, G."},{"full_name":"Thomas, P.","last_name":"Thomas","first_name":"P."},{"first_name":"S.W.","full_name":"Koch, S.W.","last_name":"Koch"}],"date_created":"2023-04-14T22:49:22Z","publisher":"American Physical Society","date_updated":"2023-04-14T22:49:25Z","doi":"10.1103/PhysRevB.51.14490","main_file_link":[{"url":"https://journals.aps.org/prb/abstract/10.1103/PhysRevB.51.14490"}],"title":"Coherent effects induced by static and time-dependent electric fields in semiconductors"}]