---
_id: '21044'
article_number: '033010'
author:
- first_name: S
full_name: Krapick, S
last_name: Krapick
- first_name: Harald
full_name: Herrmann, Harald
id: '216'
last_name: Herrmann
- first_name: V
full_name: Quiring, V
last_name: Quiring
- first_name: Benjamin
full_name: Brecht, Benjamin
id: '27150'
last_name: Brecht
orcid: '0000-0003-4140-0556 '
- first_name: H
full_name: Suche, H
last_name: Suche
- first_name: Christine
full_name: Silberhorn, Christine
id: '26263'
last_name: Silberhorn
citation:
ama: Krapick S, Herrmann H, Quiring V, Brecht B, Suche H, Silberhorn C. An efficient
integrated two-color source for heralded single photons. New Journal of Physics.
2013;15. doi:10.1088/1367-2630/15/3/033010
apa: Krapick, S., Herrmann, H., Quiring, V., Brecht, B., Suche, H., & Silberhorn,
C. (2013). An efficient integrated two-color source for heralded single photons.
New Journal of Physics, 15. https://doi.org/10.1088/1367-2630/15/3/033010
bibtex: '@article{Krapick_Herrmann_Quiring_Brecht_Suche_Silberhorn_2013, title={An
efficient integrated two-color source for heralded single photons}, volume={15},
DOI={10.1088/1367-2630/15/3/033010},
number={033010}, journal={New Journal of Physics}, author={Krapick, S and Herrmann,
Harald and Quiring, V and Brecht, Benjamin and Suche, H and Silberhorn, Christine},
year={2013} }'
chicago: Krapick, S, Harald Herrmann, V Quiring, Benjamin Brecht, H Suche, and Christine
Silberhorn. “An Efficient Integrated Two-Color Source for Heralded Single Photons.”
New Journal of Physics 15 (2013). https://doi.org/10.1088/1367-2630/15/3/033010.
ieee: S. Krapick, H. Herrmann, V. Quiring, B. Brecht, H. Suche, and C. Silberhorn,
“An efficient integrated two-color source for heralded single photons,” New
Journal of Physics, vol. 15, 2013.
mla: Krapick, S., et al. “An Efficient Integrated Two-Color Source for Heralded
Single Photons.” New Journal of Physics, vol. 15, 033010, 2013, doi:10.1088/1367-2630/15/3/033010.
short: S. Krapick, H. Herrmann, V. Quiring, B. Brecht, H. Suche, C. Silberhorn,
New Journal of Physics 15 (2013).
date_created: 2021-01-20T08:56:02Z
date_updated: 2022-01-06T06:54:42Z
department:
- _id: '15'
doi: 10.1088/1367-2630/15/3/033010
intvolume: ' 15'
language:
- iso: eng
publication: New Journal of Physics
publication_identifier:
issn:
- 1367-2630
publication_status: published
status: public
title: An efficient integrated two-color source for heralded single photons
type: journal_article
user_id: '27150'
volume: 15
year: '2013'
...
---
_id: '7236'
author:
- first_name: Fang-Yuh
full_name: Lo, Fang-Yuh
last_name: Lo
- first_name: Jhong-Yu
full_name: Guo, Jhong-Yu
last_name: Guo
- first_name: Cheng-De
full_name: Huang, Cheng-De
last_name: Huang
- first_name: Kai-Chieh
full_name: Chou, Kai-Chieh
last_name: Chou
- first_name: Hsiang-Lin
full_name: Liu, Hsiang-Lin
last_name: Liu
- first_name: Verena
full_name: Ney, Verena
last_name: Ney
- first_name: Andreas
full_name: Ney, Andreas
last_name: Ney
- first_name: Ming-Yau
full_name: Chern, Ming-Yau
last_name: Chern
- first_name: Stepan
full_name: Shvarkov, Stepan
last_name: Shvarkov
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Sébastien
full_name: Pezzagna, Sébastien
last_name: Pezzagna
- first_name: Jean
full_name: Massies, Jean
last_name: Massies
citation:
ama: Lo F-Y, Guo J-Y, Huang C-D, et al. Evidences of defect contribution in magnetically
ordered Sm-implanted GaN. Current Applied Physics. 2013;14:S7-S11. doi:10.1016/j.cap.2013.11.051
apa: Lo, F.-Y., Guo, J.-Y., Huang, C.-D., Chou, K.-C., Liu, H.-L., Ney, V., … Massies,
J. (2013). Evidences of defect contribution in magnetically ordered Sm-implanted
GaN. Current Applied Physics, 14, S7–S11. https://doi.org/10.1016/j.cap.2013.11.051
bibtex: '@article{Lo_Guo_Huang_Chou_Liu_Ney_Ney_Chern_Shvarkov_Reuter_et al._2013,
title={Evidences of defect contribution in magnetically ordered Sm-implanted GaN},
volume={14}, DOI={10.1016/j.cap.2013.11.051},
journal={Current Applied Physics}, publisher={Elsevier BV}, author={Lo, Fang-Yuh
and Guo, Jhong-Yu and Huang, Cheng-De and Chou, Kai-Chieh and Liu, Hsiang-Lin
and Ney, Verena and Ney, Andreas and Chern, Ming-Yau and Shvarkov, Stepan and
Reuter, Dirk and et al.}, year={2013}, pages={S7–S11} }'
chicago: 'Lo, Fang-Yuh, Jhong-Yu Guo, Cheng-De Huang, Kai-Chieh Chou, Hsiang-Lin
Liu, Verena Ney, Andreas Ney, et al. “Evidences of Defect Contribution in Magnetically
Ordered Sm-Implanted GaN.” Current Applied Physics 14 (2013): S7–11. https://doi.org/10.1016/j.cap.2013.11.051.'
ieee: F.-Y. Lo et al., “Evidences of defect contribution in magnetically
ordered Sm-implanted GaN,” Current Applied Physics, vol. 14, pp. S7–S11,
2013.
mla: Lo, Fang-Yuh, et al. “Evidences of Defect Contribution in Magnetically Ordered
Sm-Implanted GaN.” Current Applied Physics, vol. 14, Elsevier BV, 2013,
pp. S7–11, doi:10.1016/j.cap.2013.11.051.
short: F.-Y. Lo, J.-Y. Guo, C.-D. Huang, K.-C. Chou, H.-L. Liu, V. Ney, A. Ney,
M.-Y. Chern, S. Shvarkov, D. Reuter, A.D. Wieck, S. Pezzagna, J. Massies, Current
Applied Physics 14 (2013) S7–S11.
date_created: 2019-01-29T12:43:55Z
date_updated: 2022-01-06T07:03:30Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/j.cap.2013.11.051
intvolume: ' 14'
language:
- iso: eng
page: S7-S11
publication: Current Applied Physics
publication_identifier:
issn:
- 1567-1739
publication_status: published
publisher: Elsevier BV
status: public
title: Evidences of defect contribution in magnetically ordered Sm-implanted GaN
type: journal_article
user_id: '42514'
volume: 14
year: '2013'
...
---
_id: '7239'
author:
- first_name: A.
full_name: Steinhoff, A.
last_name: Steinhoff
- first_name: H.
full_name: Kurtze, H.
last_name: Kurtze
- first_name: P.
full_name: Gartner, P.
last_name: Gartner
- first_name: M.
full_name: Florian, M.
last_name: Florian
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: M.
full_name: Bayer, M.
last_name: Bayer
- first_name: F.
full_name: Jahnke, F.
last_name: Jahnke
citation:
ama: Steinhoff A, Kurtze H, Gartner P, et al. Combined influence of Coulomb interaction
and polarons on the carrier dynamics in InGaAs quantum dots. Physical Review
B. 2013;88(20). doi:10.1103/physrevb.88.205309
apa: Steinhoff, A., Kurtze, H., Gartner, P., Florian, M., Reuter, D., Wieck, A.
D., … Jahnke, F. (2013). Combined influence of Coulomb interaction and polarons
on the carrier dynamics in InGaAs quantum dots. Physical Review B, 88(20).
https://doi.org/10.1103/physrevb.88.205309
bibtex: '@article{Steinhoff_Kurtze_Gartner_Florian_Reuter_Wieck_Bayer_Jahnke_2013,
title={Combined influence of Coulomb interaction and polarons on the carrier dynamics
in InGaAs quantum dots}, volume={88}, DOI={10.1103/physrevb.88.205309},
number={20}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Steinhoff, A. and Kurtze, H. and Gartner, P. and Florian, M. and
Reuter, Dirk and Wieck, A. D. and Bayer, M. and Jahnke, F.}, year={2013} }'
chicago: Steinhoff, A., H. Kurtze, P. Gartner, M. Florian, Dirk Reuter, A. D. Wieck,
M. Bayer, and F. Jahnke. “Combined Influence of Coulomb Interaction and Polarons
on the Carrier Dynamics in InGaAs Quantum Dots.” Physical Review B 88,
no. 20 (2013). https://doi.org/10.1103/physrevb.88.205309.
ieee: A. Steinhoff et al., “Combined influence of Coulomb interaction and
polarons on the carrier dynamics in InGaAs quantum dots,” Physical Review B,
vol. 88, no. 20, 2013.
mla: Steinhoff, A., et al. “Combined Influence of Coulomb Interaction and Polarons
on the Carrier Dynamics in InGaAs Quantum Dots.” Physical Review B, vol.
88, no. 20, American Physical Society (APS), 2013, doi:10.1103/physrevb.88.205309.
short: A. Steinhoff, H. Kurtze, P. Gartner, M. Florian, D. Reuter, A.D. Wieck, M.
Bayer, F. Jahnke, Physical Review B 88 (2013).
date_created: 2019-01-29T14:01:47Z
date_updated: 2022-01-06T07:03:30Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevb.88.205309
intvolume: ' 88'
issue: '20'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Combined influence of Coulomb interaction and polarons on the carrier dynamics
in InGaAs quantum dots
type: journal_article
user_id: '42514'
volume: 88
year: '2013'
...
---
_id: '7240'
author:
- first_name: T.
full_name: Henn, T.
last_name: Henn
- first_name: T.
full_name: Kiessling, T.
last_name: Kiessling
- first_name: W.
full_name: Ossau, W.
last_name: Ossau
- first_name: L. W.
full_name: Molenkamp, L. W.
last_name: Molenkamp
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Henn T, Kiessling T, Ossau W, Molenkamp LW, Reuter D, Wieck AD. Picosecond
real-space imaging of electron spin diffusion in GaAs. Physical Review B.
2013;88(19). doi:10.1103/physrevb.88.195202
apa: Henn, T., Kiessling, T., Ossau, W., Molenkamp, L. W., Reuter, D., & Wieck,
A. D. (2013). Picosecond real-space imaging of electron spin diffusion in GaAs.
Physical Review B, 88(19). https://doi.org/10.1103/physrevb.88.195202
bibtex: '@article{Henn_Kiessling_Ossau_Molenkamp_Reuter_Wieck_2013, title={Picosecond
real-space imaging of electron spin diffusion in GaAs}, volume={88}, DOI={10.1103/physrevb.88.195202},
number={19}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Henn, T. and Kiessling, T. and Ossau, W. and Molenkamp, L. W.
and Reuter, Dirk and Wieck, A. D.}, year={2013} }'
chicago: Henn, T., T. Kiessling, W. Ossau, L. W. Molenkamp, Dirk Reuter, and A.
D. Wieck. “Picosecond Real-Space Imaging of Electron Spin Diffusion in GaAs.”
Physical Review B 88, no. 19 (2013). https://doi.org/10.1103/physrevb.88.195202.
ieee: T. Henn, T. Kiessling, W. Ossau, L. W. Molenkamp, D. Reuter, and A. D. Wieck,
“Picosecond real-space imaging of electron spin diffusion in GaAs,” Physical
Review B, vol. 88, no. 19, 2013.
mla: Henn, T., et al. “Picosecond Real-Space Imaging of Electron Spin Diffusion
in GaAs.” Physical Review B, vol. 88, no. 19, American Physical Society
(APS), 2013, doi:10.1103/physrevb.88.195202.
short: T. Henn, T. Kiessling, W. Ossau, L.W. Molenkamp, D. Reuter, A.D. Wieck, Physical
Review B 88 (2013).
date_created: 2019-01-29T14:04:19Z
date_updated: 2022-01-06T07:03:30Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevb.88.195202
intvolume: ' 88'
issue: '19'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Picosecond real-space imaging of electron spin diffusion in GaAs
type: journal_article
user_id: '42514'
volume: 88
year: '2013'
...
---
_id: '7258'
author:
- first_name: T.
full_name: Henn, T.
last_name: Henn
- first_name: A.
full_name: Heckel, A.
last_name: Heckel
- first_name: M.
full_name: Beck, M.
last_name: Beck
- first_name: T.
full_name: Kiessling, T.
last_name: Kiessling
- first_name: W.
full_name: Ossau, W.
last_name: Ossau
- first_name: L. W.
full_name: Molenkamp, L. W.
last_name: Molenkamp
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Henn T, Heckel A, Beck M, et al. Hot carrier effects on the magneto-optical
detection of electron spins in GaAs. Physical Review B. 2013;88(8). doi:10.1103/physrevb.88.085303
apa: Henn, T., Heckel, A., Beck, M., Kiessling, T., Ossau, W., Molenkamp, L. W.,
… Wieck, A. D. (2013). Hot carrier effects on the magneto-optical detection of
electron spins in GaAs. Physical Review B, 88(8). https://doi.org/10.1103/physrevb.88.085303
bibtex: '@article{Henn_Heckel_Beck_Kiessling_Ossau_Molenkamp_Reuter_Wieck_2013,
title={Hot carrier effects on the magneto-optical detection of electron spins
in GaAs}, volume={88}, DOI={10.1103/physrevb.88.085303},
number={8}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Henn, T. and Heckel, A. and Beck, M. and Kiessling, T. and Ossau,
W. and Molenkamp, L. W. and Reuter, Dirk and Wieck, A. D.}, year={2013} }'
chicago: Henn, T., A. Heckel, M. Beck, T. Kiessling, W. Ossau, L. W. Molenkamp,
Dirk Reuter, and A. D. Wieck. “Hot Carrier Effects on the Magneto-Optical Detection
of Electron Spins in GaAs.” Physical Review B 88, no. 8 (2013). https://doi.org/10.1103/physrevb.88.085303.
ieee: T. Henn et al., “Hot carrier effects on the magneto-optical detection
of electron spins in GaAs,” Physical Review B, vol. 88, no. 8, 2013.
mla: Henn, T., et al. “Hot Carrier Effects on the Magneto-Optical Detection of Electron
Spins in GaAs.” Physical Review B, vol. 88, no. 8, American Physical Society
(APS), 2013, doi:10.1103/physrevb.88.085303.
short: T. Henn, A. Heckel, M. Beck, T. Kiessling, W. Ossau, L.W. Molenkamp, D. Reuter,
A.D. Wieck, Physical Review B 88 (2013).
date_created: 2019-01-30T12:54:43Z
date_updated: 2022-01-06T07:03:30Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevb.88.085303
intvolume: ' 88'
issue: '8'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Hot carrier effects on the magneto-optical detection of electron spins in GaAs
type: journal_article
user_id: '42514'
volume: 88
year: '2013'
...
---
_id: '7259'
article_number: '092401'
author:
- first_name: J. H.
full_name: Buß, J. H.
last_name: Buß
- first_name: J.
full_name: Rudolph, J.
last_name: Rudolph
- first_name: S.
full_name: Shvarkov, S.
last_name: Shvarkov
- first_name: F.
full_name: Semond, F.
last_name: Semond
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: D.
full_name: Hägele, D.
last_name: Hägele
citation:
ama: 'Buß JH, Rudolph J, Shvarkov S, et al. Magneto-optical studies of Gd-implanted
GaN: No spin alignment of conduction band electrons. Applied Physics Letters.
2013;103(9). doi:10.1063/1.4819767'
apa: 'Buß, J. H., Rudolph, J., Shvarkov, S., Semond, F., Reuter, D., Wieck, A. D.,
& Hägele, D. (2013). Magneto-optical studies of Gd-implanted GaN: No spin
alignment of conduction band electrons. Applied Physics Letters, 103(9).
https://doi.org/10.1063/1.4819767'
bibtex: '@article{Buß_Rudolph_Shvarkov_Semond_Reuter_Wieck_Hägele_2013, title={Magneto-optical
studies of Gd-implanted GaN: No spin alignment of conduction band electrons},
volume={103}, DOI={10.1063/1.4819767},
number={9092401}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Buß, J. H. and Rudolph, J. and Shvarkov, S. and Semond, F. and Reuter,
Dirk and Wieck, A. D. and Hägele, D.}, year={2013} }'
chicago: 'Buß, J. H., J. Rudolph, S. Shvarkov, F. Semond, Dirk Reuter, A. D. Wieck,
and D. Hägele. “Magneto-Optical Studies of Gd-Implanted GaN: No Spin Alignment
of Conduction Band Electrons.” Applied Physics Letters 103, no. 9 (2013).
https://doi.org/10.1063/1.4819767.'
ieee: 'J. H. Buß et al., “Magneto-optical studies of Gd-implanted GaN: No
spin alignment of conduction band electrons,” Applied Physics Letters,
vol. 103, no. 9, 2013.'
mla: 'Buß, J. H., et al. “Magneto-Optical Studies of Gd-Implanted GaN: No Spin Alignment
of Conduction Band Electrons.” Applied Physics Letters, vol. 103, no. 9,
092401, AIP Publishing, 2013, doi:10.1063/1.4819767.'
short: J.H. Buß, J. Rudolph, S. Shvarkov, F. Semond, D. Reuter, A.D. Wieck, D. Hägele,
Applied Physics Letters 103 (2013).
date_created: 2019-01-30T12:56:20Z
date_updated: 2022-01-06T07:03:30Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.4819767
intvolume: ' 103'
issue: '9'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: 'Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction
band electrons'
type: journal_article
user_id: '42514'
volume: 103
year: '2013'
...
---
_id: '7260'
article_number: '325304'
author:
- first_name: D J
full_name: Carrad, D J
last_name: Carrad
- first_name: A M
full_name: Burke, A M
last_name: Burke
- first_name: P J
full_name: Reece, P J
last_name: Reece
- first_name: R W
full_name: Lyttleton, R W
last_name: Lyttleton
- first_name: D E J
full_name: Waddington, D E J
last_name: Waddington
- first_name: A
full_name: Rai, A
last_name: Rai
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A D
full_name: Wieck, A D
last_name: Wieck
- first_name: A P
full_name: Micolich, A P
last_name: Micolich
citation:
ama: 'Carrad DJ, Burke AM, Reece PJ, et al. The effect of (NH4)2Sxpassivation on
the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices. Journal
of Physics: Condensed Matter. 2013;25(32). doi:10.1088/0953-8984/25/32/325304'
apa: 'Carrad, D. J., Burke, A. M., Reece, P. J., Lyttleton, R. W., Waddington, D.
E. J., Rai, A., … Micolich, A. P. (2013). The effect of (NH4)2Sxpassivation on
the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices. Journal
of Physics: Condensed Matter, 25(32). https://doi.org/10.1088/0953-8984/25/32/325304'
bibtex: '@article{Carrad_Burke_Reece_Lyttleton_Waddington_Rai_Reuter_Wieck_Micolich_2013,
title={The effect of (NH4)2Sxpassivation on the (311)A GaAs surface and its use
in AlGaAs/GaAs heterostructure devices}, volume={25}, DOI={10.1088/0953-8984/25/32/325304},
number={32325304}, journal={Journal of Physics: Condensed Matter}, publisher={IOP
Publishing}, author={Carrad, D J and Burke, A M and Reece, P J and Lyttleton,
R W and Waddington, D E J and Rai, A and Reuter, Dirk and Wieck, A D and Micolich,
A P}, year={2013} }'
chicago: 'Carrad, D J, A M Burke, P J Reece, R W Lyttleton, D E J Waddington, A
Rai, Dirk Reuter, A D Wieck, and A P Micolich. “The Effect of (NH4)2Sxpassivation
on the (311)A GaAs Surface and Its Use in AlGaAs/GaAs Heterostructure Devices.”
Journal of Physics: Condensed Matter 25, no. 32 (2013). https://doi.org/10.1088/0953-8984/25/32/325304.'
ieee: 'D. J. Carrad et al., “The effect of (NH4)2Sxpassivation on the (311)A
GaAs surface and its use in AlGaAs/GaAs heterostructure devices,” Journal of
Physics: Condensed Matter, vol. 25, no. 32, 2013.'
mla: 'Carrad, D. J., et al. “The Effect of (NH4)2Sxpassivation on the (311)A GaAs
Surface and Its Use in AlGaAs/GaAs Heterostructure Devices.” Journal of Physics:
Condensed Matter, vol. 25, no. 32, 325304, IOP Publishing, 2013, doi:10.1088/0953-8984/25/32/325304.'
short: 'D.J. Carrad, A.M. Burke, P.J. Reece, R.W. Lyttleton, D.E.J. Waddington,
A. Rai, D. Reuter, A.D. Wieck, A.P. Micolich, Journal of Physics: Condensed Matter
25 (2013).'
date_created: 2019-01-30T12:57:16Z
date_updated: 2022-01-06T07:03:31Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/0953-8984/25/32/325304
intvolume: ' 25'
issue: '32'
language:
- iso: eng
publication: 'Journal of Physics: Condensed Matter'
publication_identifier:
issn:
- 0953-8984
- 1361-648X
publication_status: published
publisher: IOP Publishing
status: public
title: The effect of (NH4)2Sxpassivation on the (311)A GaAs surface and its use in
AlGaAs/GaAs heterostructure devices
type: journal_article
user_id: '42514'
volume: 25
year: '2013'
...
---
_id: '7261'
author:
- first_name: Henning
full_name: Höpfner, Henning
last_name: Höpfner
- first_name: Carola
full_name: Fritsche, Carola
last_name: Fritsche
- first_name: Arne
full_name: Ludwig, Arne
last_name: Ludwig
- first_name: Astrid
full_name: Ludwig, Astrid
last_name: Ludwig
- first_name: Frank
full_name: Stromberg, Frank
last_name: Stromberg
- first_name: Heiko
full_name: Wende, Heiko
last_name: Wende
- first_name: Werner
full_name: Keune, Werner
last_name: Keune
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Nils C.
full_name: Gerhardt, Nils C.
last_name: Gerhardt
- first_name: Martin R.
full_name: Hofmann, Martin R.
last_name: Hofmann
citation:
ama: Höpfner H, Fritsche C, Ludwig A, et al. Spin relaxation length in quantum dot
spin LEDs. physica status solidi (c). 2013;10(9):1214-1217. doi:10.1002/pssc.201200689
apa: Höpfner, H., Fritsche, C., Ludwig, A., Ludwig, A., Stromberg, F., Wende, H.,
… Hofmann, M. R. (2013). Spin relaxation length in quantum dot spin LEDs. Physica
Status Solidi (C), 10(9), 1214–1217. https://doi.org/10.1002/pssc.201200689
bibtex: '@article{Höpfner_Fritsche_Ludwig_Ludwig_Stromberg_Wende_Keune_Reuter_Wieck_Gerhardt_et
al._2013, title={Spin relaxation length in quantum dot spin LEDs}, volume={10},
DOI={10.1002/pssc.201200689},
number={9}, journal={physica status solidi (c)}, publisher={Wiley}, author={Höpfner,
Henning and Fritsche, Carola and Ludwig, Arne and Ludwig, Astrid and Stromberg,
Frank and Wende, Heiko and Keune, Werner and Reuter, Dirk and Wieck, Andreas D.
and Gerhardt, Nils C. and et al.}, year={2013}, pages={1214–1217} }'
chicago: 'Höpfner, Henning, Carola Fritsche, Arne Ludwig, Astrid Ludwig, Frank Stromberg,
Heiko Wende, Werner Keune, et al. “Spin Relaxation Length in Quantum Dot Spin
LEDs.” Physica Status Solidi (C) 10, no. 9 (2013): 1214–17. https://doi.org/10.1002/pssc.201200689.'
ieee: H. Höpfner et al., “Spin relaxation length in quantum dot spin LEDs,”
physica status solidi (c), vol. 10, no. 9, pp. 1214–1217, 2013.
mla: Höpfner, Henning, et al. “Spin Relaxation Length in Quantum Dot Spin LEDs.”
Physica Status Solidi (C), vol. 10, no. 9, Wiley, 2013, pp. 1214–17, doi:10.1002/pssc.201200689.
short: H. Höpfner, C. Fritsche, A. Ludwig, A. Ludwig, F. Stromberg, H. Wende, W.
Keune, D. Reuter, A.D. Wieck, N.C. Gerhardt, M.R. Hofmann, Physica Status Solidi
(C) 10 (2013) 1214–1217.
date_created: 2019-01-30T12:58:14Z
date_updated: 2022-01-06T07:03:31Z
department:
- _id: '15'
- _id: '230'
doi: 10.1002/pssc.201200689
intvolume: ' 10'
issue: '9'
language:
- iso: eng
page: 1214-1217
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: Spin relaxation length in quantum dot spin LEDs
type: journal_article
user_id: '42514'
volume: 10
year: '2013'
...
---
_id: '7262'
author:
- first_name: Jonathan H.
full_name: Prechtel, Jonathan H.
last_name: Prechtel
- first_name: Andreas V.
full_name: Kuhlmann, Andreas V.
last_name: Kuhlmann
- first_name: Julien
full_name: Houel, Julien
last_name: Houel
- first_name: Lukas
full_name: Greuter, Lukas
last_name: Greuter
- first_name: Arne
full_name: Ludwig, Arne
last_name: Ludwig
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Richard J.
full_name: Warburton, Richard J.
last_name: Warburton
citation:
ama: Prechtel JH, Kuhlmann AV, Houel J, et al. Frequency-Stabilized Source of Single
Photons from a Solid-State Qubit. Physical Review X. 2013;3(4). doi:10.1103/physrevx.3.041006
apa: Prechtel, J. H., Kuhlmann, A. V., Houel, J., Greuter, L., Ludwig, A., Reuter,
D., … Warburton, R. J. (2013). Frequency-Stabilized Source of Single Photons from
a Solid-State Qubit. Physical Review X, 3(4). https://doi.org/10.1103/physrevx.3.041006
bibtex: '@article{Prechtel_Kuhlmann_Houel_Greuter_Ludwig_Reuter_Wieck_Warburton_2013,
title={Frequency-Stabilized Source of Single Photons from a Solid-State Qubit},
volume={3}, DOI={10.1103/physrevx.3.041006},
number={4}, journal={Physical Review X}, publisher={American Physical Society
(APS)}, author={Prechtel, Jonathan H. and Kuhlmann, Andreas V. and Houel, Julien
and Greuter, Lukas and Ludwig, Arne and Reuter, Dirk and Wieck, Andreas D. and
Warburton, Richard J.}, year={2013} }'
chicago: Prechtel, Jonathan H., Andreas V. Kuhlmann, Julien Houel, Lukas Greuter,
Arne Ludwig, Dirk Reuter, Andreas D. Wieck, and Richard J. Warburton. “Frequency-Stabilized
Source of Single Photons from a Solid-State Qubit.” Physical Review X 3,
no. 4 (2013). https://doi.org/10.1103/physrevx.3.041006.
ieee: J. H. Prechtel et al., “Frequency-Stabilized Source of Single Photons
from a Solid-State Qubit,” Physical Review X, vol. 3, no. 4, 2013.
mla: Prechtel, Jonathan H., et al. “Frequency-Stabilized Source of Single Photons
from a Solid-State Qubit.” Physical Review X, vol. 3, no. 4, American Physical
Society (APS), 2013, doi:10.1103/physrevx.3.041006.
short: J.H. Prechtel, A.V. Kuhlmann, J. Houel, L. Greuter, A. Ludwig, D. Reuter,
A.D. Wieck, R.J. Warburton, Physical Review X 3 (2013).
date_created: 2019-01-30T12:59:55Z
date_updated: 2022-01-06T07:03:31Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevx.3.041006
intvolume: ' 3'
issue: '4'
language:
- iso: eng
publication: Physical Review X
publication_identifier:
issn:
- 2160-3308
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Frequency-Stabilized Source of Single Photons from a Solid-State Qubit
type: journal_article
user_id: '42514'
volume: 3
year: '2013'
...
---
_id: '7263'
author:
- first_name: Galan
full_name: Moody, Galan
last_name: Moody
- first_name: Rohan
full_name: Singh, Rohan
last_name: Singh
- first_name: Hebin
full_name: Li, Hebin
last_name: Li
- first_name: Ilya A.
full_name: Akimov, Ilya A.
last_name: Akimov
- first_name: Manfred
full_name: Bayer, Manfred
last_name: Bayer
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Allan S.
full_name: Bracker, Allan S.
last_name: Bracker
- first_name: Daniel
full_name: Gammon, Daniel
last_name: Gammon
- first_name: Steven T.
full_name: Cundiff, Steven T.
last_name: Cundiff
citation:
ama: Moody G, Singh R, Li H, et al. Biexcitons in semiconductor quantum dot ensembles.
physica status solidi (b). 2013;250(9):1753-1759. doi:10.1002/pssb.201200725
apa: Moody, G., Singh, R., Li, H., Akimov, I. A., Bayer, M., Reuter, D., … Cundiff,
S. T. (2013). Biexcitons in semiconductor quantum dot ensembles. Physica Status
Solidi (B), 250(9), 1753–1759. https://doi.org/10.1002/pssb.201200725
bibtex: '@article{Moody_Singh_Li_Akimov_Bayer_Reuter_Wieck_Bracker_Gammon_Cundiff_2013,
title={Biexcitons in semiconductor quantum dot ensembles}, volume={250}, DOI={10.1002/pssb.201200725}, number={9},
journal={physica status solidi (b)}, publisher={Wiley}, author={Moody, Galan and
Singh, Rohan and Li, Hebin and Akimov, Ilya A. and Bayer, Manfred and Reuter,
Dirk and Wieck, Andreas D. and Bracker, Allan S. and Gammon, Daniel and Cundiff,
Steven T.}, year={2013}, pages={1753–1759} }'
chicago: 'Moody, Galan, Rohan Singh, Hebin Li, Ilya A. Akimov, Manfred Bayer, Dirk
Reuter, Andreas D. Wieck, Allan S. Bracker, Daniel Gammon, and Steven T. Cundiff.
“Biexcitons in Semiconductor Quantum Dot Ensembles.” Physica Status Solidi
(B) 250, no. 9 (2013): 1753–59. https://doi.org/10.1002/pssb.201200725.'
ieee: G. Moody et al., “Biexcitons in semiconductor quantum dot ensembles,”
physica status solidi (b), vol. 250, no. 9, pp. 1753–1759, 2013.
mla: Moody, Galan, et al. “Biexcitons in Semiconductor Quantum Dot Ensembles.” Physica
Status Solidi (B), vol. 250, no. 9, Wiley, 2013, pp. 1753–59, doi:10.1002/pssb.201200725.
short: G. Moody, R. Singh, H. Li, I.A. Akimov, M. Bayer, D. Reuter, A.D. Wieck,
A.S. Bracker, D. Gammon, S.T. Cundiff, Physica Status Solidi (B) 250 (2013) 1753–1759.
date_created: 2019-01-30T13:07:31Z
date_updated: 2022-01-06T07:03:31Z
department:
- _id: '15'
- _id: '230'
doi: 10.1002/pssb.201200725
intvolume: ' 250'
issue: '9'
language:
- iso: eng
page: 1753-1759
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
publication_status: published
publisher: Wiley
status: public
title: Biexcitons in semiconductor quantum dot ensembles
type: journal_article
user_id: '42514'
volume: 250
year: '2013'
...
---
_id: '7264'
article_number: '093305'
author:
- first_name: Martin
full_name: Wortmann, Martin
last_name: Wortmann
- first_name: Arne
full_name: Ludwig, Arne
last_name: Ludwig
- first_name: Jan
full_name: Meijer, Jan
last_name: Meijer
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
citation:
ama: Wortmann M, Ludwig A, Meijer J, Reuter D, Wieck AD. High-resolution mass spectrometer
for liquid metal ion sources. Review of Scientific Instruments. 2013;84(9).
doi:10.1063/1.4822275
apa: Wortmann, M., Ludwig, A., Meijer, J., Reuter, D., & Wieck, A. D. (2013).
High-resolution mass spectrometer for liquid metal ion sources. Review of Scientific
Instruments, 84(9). https://doi.org/10.1063/1.4822275
bibtex: '@article{Wortmann_Ludwig_Meijer_Reuter_Wieck_2013, title={High-resolution
mass spectrometer for liquid metal ion sources}, volume={84}, DOI={10.1063/1.4822275},
number={9093305}, journal={Review of Scientific Instruments}, publisher={AIP Publishing},
author={Wortmann, Martin and Ludwig, Arne and Meijer, Jan and Reuter, Dirk and
Wieck, Andreas D.}, year={2013} }'
chicago: Wortmann, Martin, Arne Ludwig, Jan Meijer, Dirk Reuter, and Andreas D.
Wieck. “High-Resolution Mass Spectrometer for Liquid Metal Ion Sources.” Review
of Scientific Instruments 84, no. 9 (2013). https://doi.org/10.1063/1.4822275.
ieee: M. Wortmann, A. Ludwig, J. Meijer, D. Reuter, and A. D. Wieck, “High-resolution
mass spectrometer for liquid metal ion sources,” Review of Scientific Instruments,
vol. 84, no. 9, 2013.
mla: Wortmann, Martin, et al. “High-Resolution Mass Spectrometer for Liquid Metal
Ion Sources.” Review of Scientific Instruments, vol. 84, no. 9, 093305,
AIP Publishing, 2013, doi:10.1063/1.4822275.
short: M. Wortmann, A. Ludwig, J. Meijer, D. Reuter, A.D. Wieck, Review of Scientific
Instruments 84 (2013).
date_created: 2019-01-30T13:13:29Z
date_updated: 2022-01-06T07:03:31Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.4822275
intvolume: ' 84'
issue: '9'
language:
- iso: eng
publication: Review of Scientific Instruments
publication_identifier:
issn:
- 0034-6748
- 1089-7623
publication_status: published
publisher: AIP Publishing
status: public
title: High-resolution mass spectrometer for liquid metal ion sources
type: journal_article
user_id: '42514'
volume: 84
year: '2013'
...
---
_id: '7266'
author:
- first_name: Andreas V.
full_name: Kuhlmann, Andreas V.
last_name: Kuhlmann
- first_name: Julien
full_name: Houel, Julien
last_name: Houel
- first_name: Arne
full_name: Ludwig, Arne
last_name: Ludwig
- first_name: Lukas
full_name: Greuter, Lukas
last_name: Greuter
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Martino
full_name: Poggio, Martino
last_name: Poggio
- first_name: Richard J.
full_name: Warburton, Richard J.
last_name: Warburton
citation:
ama: Kuhlmann AV, Houel J, Ludwig A, et al. Charge noise and spin noise in a semiconductor
quantum device. Nature Physics. 2013;9(9):570-575. doi:10.1038/nphys2688
apa: Kuhlmann, A. V., Houel, J., Ludwig, A., Greuter, L., Reuter, D., Wieck, A.
D., … Warburton, R. J. (2013). Charge noise and spin noise in a semiconductor
quantum device. Nature Physics, 9(9), 570–575. https://doi.org/10.1038/nphys2688
bibtex: '@article{Kuhlmann_Houel_Ludwig_Greuter_Reuter_Wieck_Poggio_Warburton_2013,
title={Charge noise and spin noise in a semiconductor quantum device}, volume={9},
DOI={10.1038/nphys2688}, number={9},
journal={Nature Physics}, publisher={Springer Nature}, author={Kuhlmann, Andreas
V. and Houel, Julien and Ludwig, Arne and Greuter, Lukas and Reuter, Dirk and
Wieck, Andreas D. and Poggio, Martino and Warburton, Richard J.}, year={2013},
pages={570–575} }'
chicago: 'Kuhlmann, Andreas V., Julien Houel, Arne Ludwig, Lukas Greuter, Dirk Reuter,
Andreas D. Wieck, Martino Poggio, and Richard J. Warburton. “Charge Noise and
Spin Noise in a Semiconductor Quantum Device.” Nature Physics 9, no. 9
(2013): 570–75. https://doi.org/10.1038/nphys2688.'
ieee: A. V. Kuhlmann et al., “Charge noise and spin noise in a semiconductor
quantum device,” Nature Physics, vol. 9, no. 9, pp. 570–575, 2013.
mla: Kuhlmann, Andreas V., et al. “Charge Noise and Spin Noise in a Semiconductor
Quantum Device.” Nature Physics, vol. 9, no. 9, Springer Nature, 2013,
pp. 570–75, doi:10.1038/nphys2688.
short: A.V. Kuhlmann, J. Houel, A. Ludwig, L. Greuter, D. Reuter, A.D. Wieck, M.
Poggio, R.J. Warburton, Nature Physics 9 (2013) 570–575.
date_created: 2019-01-30T13:15:20Z
date_updated: 2022-01-06T07:03:31Z
department:
- _id: '15'
- _id: '230'
doi: 10.1038/nphys2688
intvolume: ' 9'
issue: '9'
language:
- iso: eng
page: 570-575
publication: Nature Physics
publication_identifier:
issn:
- 1745-2473
- 1745-2481
publication_status: published
publisher: Springer Nature
status: public
title: Charge noise and spin noise in a semiconductor quantum device
type: journal_article
user_id: '42514'
volume: 9
year: '2013'
...
---
_id: '7267'
article_number: '073905'
author:
- first_name: Andreas V.
full_name: Kuhlmann, Andreas V.
last_name: Kuhlmann
- first_name: Julien
full_name: Houel, Julien
last_name: Houel
- first_name: Daniel
full_name: Brunner, Daniel
last_name: Brunner
- first_name: Arne
full_name: Ludwig, Arne
last_name: Ludwig
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Richard J.
full_name: Warburton, Richard J.
last_name: Warburton
citation:
ama: Kuhlmann AV, Houel J, Brunner D, et al. A dark-field microscope for background-free
detection of resonance fluorescence from single semiconductor quantum dots operating
in a set-and-forget mode. Review of Scientific Instruments. 2013;84(7).
doi:10.1063/1.4813879
apa: Kuhlmann, A. V., Houel, J., Brunner, D., Ludwig, A., Reuter, D., Wieck, A.
D., & Warburton, R. J. (2013). A dark-field microscope for background-free
detection of resonance fluorescence from single semiconductor quantum dots operating
in a set-and-forget mode. Review of Scientific Instruments, 84(7).
https://doi.org/10.1063/1.4813879
bibtex: '@article{Kuhlmann_Houel_Brunner_Ludwig_Reuter_Wieck_Warburton_2013, title={A
dark-field microscope for background-free detection of resonance fluorescence
from single semiconductor quantum dots operating in a set-and-forget mode}, volume={84},
DOI={10.1063/1.4813879}, number={7073905},
journal={Review of Scientific Instruments}, publisher={AIP Publishing}, author={Kuhlmann,
Andreas V. and Houel, Julien and Brunner, Daniel and Ludwig, Arne and Reuter,
Dirk and Wieck, Andreas D. and Warburton, Richard J.}, year={2013} }'
chicago: Kuhlmann, Andreas V., Julien Houel, Daniel Brunner, Arne Ludwig, Dirk Reuter,
Andreas D. Wieck, and Richard J. Warburton. “A Dark-Field Microscope for Background-Free
Detection of Resonance Fluorescence from Single Semiconductor Quantum Dots Operating
in a Set-and-Forget Mode.” Review of Scientific Instruments 84, no. 7 (2013).
https://doi.org/10.1063/1.4813879.
ieee: A. V. Kuhlmann et al., “A dark-field microscope for background-free
detection of resonance fluorescence from single semiconductor quantum dots operating
in a set-and-forget mode,” Review of Scientific Instruments, vol. 84, no.
7, 2013.
mla: Kuhlmann, Andreas V., et al. “A Dark-Field Microscope for Background-Free Detection
of Resonance Fluorescence from Single Semiconductor Quantum Dots Operating in
a Set-and-Forget Mode.” Review of Scientific Instruments, vol. 84, no.
7, 073905, AIP Publishing, 2013, doi:10.1063/1.4813879.
short: A.V. Kuhlmann, J. Houel, D. Brunner, A. Ludwig, D. Reuter, A.D. Wieck, R.J.
Warburton, Review of Scientific Instruments 84 (2013).
date_created: 2019-01-30T13:16:44Z
date_updated: 2022-01-06T07:03:31Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.4813879
intvolume: ' 84'
issue: '7'
language:
- iso: eng
publication: Review of Scientific Instruments
publication_identifier:
issn:
- 0034-6748
- 1089-7623
publication_status: published
publisher: AIP Publishing
status: public
title: A dark-field microscope for background-free detection of resonance fluorescence
from single semiconductor quantum dots operating in a set-and-forget mode
type: journal_article
user_id: '42514'
volume: 84
year: '2013'
...
---
_id: '7280'
author:
- first_name: Henning
full_name: Höpfner, Henning
last_name: Höpfner
- first_name: Carola
full_name: Fritsche, Carola
last_name: Fritsche
- first_name: Arne
full_name: Ludwig, Arne
last_name: Ludwig
- first_name: Astrid
full_name: Ludwig, Astrid
last_name: Ludwig
- first_name: Frank
full_name: Stromberg, Frank
last_name: Stromberg
- first_name: Heiko
full_name: Wende, Heiko
last_name: Wende
- first_name: Werner
full_name: Keune, Werner
last_name: Keune
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Nils C.
full_name: Gerhardt, Nils C.
last_name: Gerhardt
- first_name: Martin R.
full_name: Hofmann, Martin R.
last_name: Hofmann
citation:
ama: 'Höpfner H, Fritsche C, Ludwig A, et al. Spin injection, transport, and relaxation
in spin light-emitting diodes: magnetic field effects. In: Drouhin H-J, Wegrowe
J-E, Razeghi M, eds. Spintronics VI. SPIE; 2013. doi:10.1117/12.2023324'
apa: 'Höpfner, H., Fritsche, C., Ludwig, A., Ludwig, A., Stromberg, F., Wende, H.,
… Hofmann, M. R. (2013). Spin injection, transport, and relaxation in spin light-emitting
diodes: magnetic field effects. In H.-J. Drouhin, J.-E. Wegrowe, & M. Razeghi
(Eds.), Spintronics VI. SPIE. https://doi.org/10.1117/12.2023324'
bibtex: '@inproceedings{Höpfner_Fritsche_Ludwig_Ludwig_Stromberg_Wende_Keune_Reuter_Wieck_Gerhardt_et
al._2013, title={Spin injection, transport, and relaxation in spin light-emitting
diodes: magnetic field effects}, DOI={10.1117/12.2023324},
booktitle={Spintronics VI}, publisher={SPIE}, author={Höpfner, Henning and Fritsche,
Carola and Ludwig, Arne and Ludwig, Astrid and Stromberg, Frank and Wende, Heiko
and Keune, Werner and Reuter, Dirk and Wieck, Andreas D. and Gerhardt, Nils C.
and et al.}, editor={Drouhin, Henri-Jean and Wegrowe, Jean-Eric and Razeghi, ManijehEditors},
year={2013} }'
chicago: 'Höpfner, Henning, Carola Fritsche, Arne Ludwig, Astrid Ludwig, Frank Stromberg,
Heiko Wende, Werner Keune, et al. “Spin Injection, Transport, and Relaxation in
Spin Light-Emitting Diodes: Magnetic Field Effects.” In Spintronics VI,
edited by Henri-Jean Drouhin, Jean-Eric Wegrowe, and Manijeh Razeghi. SPIE, 2013.
https://doi.org/10.1117/12.2023324.'
ieee: 'H. Höpfner et al., “Spin injection, transport, and relaxation in spin
light-emitting diodes: magnetic field effects,” in Spintronics VI, 2013.'
mla: 'Höpfner, Henning, et al. “Spin Injection, Transport, and Relaxation in Spin
Light-Emitting Diodes: Magnetic Field Effects.” Spintronics VI, edited
by Henri-Jean Drouhin et al., SPIE, 2013, doi:10.1117/12.2023324.'
short: 'H. Höpfner, C. Fritsche, A. Ludwig, A. Ludwig, F. Stromberg, H. Wende, W.
Keune, D. Reuter, A.D. Wieck, N.C. Gerhardt, M.R. Hofmann, in: H.-J. Drouhin,
J.-E. Wegrowe, M. Razeghi (Eds.), Spintronics VI, SPIE, 2013.'
date_created: 2019-01-31T07:53:09Z
date_updated: 2022-01-06T07:03:31Z
department:
- _id: '15'
- _id: '230'
doi: 10.1117/12.2023324
editor:
- first_name: Henri-Jean
full_name: Drouhin, Henri-Jean
last_name: Drouhin
- first_name: Jean-Eric
full_name: Wegrowe, Jean-Eric
last_name: Wegrowe
- first_name: Manijeh
full_name: Razeghi, Manijeh
last_name: Razeghi
language:
- iso: eng
publication: Spintronics VI
publication_status: published
publisher: SPIE
status: public
title: 'Spin injection, transport, and relaxation in spin light-emitting diodes: magnetic
field effects'
type: conference
user_id: '42514'
year: '2013'
...
---
_id: '7281'
author:
- first_name: Henning
full_name: Höpfner, Henning
last_name: Höpfner
- first_name: Carola
full_name: Fritsche, Carola
last_name: Fritsche
- first_name: Arne
full_name: Ludwig, Arne
last_name: Ludwig
- first_name: Astrid
full_name: Ludwig, Astrid
last_name: Ludwig
- first_name: Frank
full_name: Stromberg, Frank
last_name: Stromberg
- first_name: Heiko
full_name: Wende, Heiko
last_name: Wende
- first_name: Werner
full_name: Keune, Werner
last_name: Keune
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Nils C.
full_name: Gerhardt, Nils C.
last_name: Gerhardt
- first_name: Martin R.
full_name: Hofmann, Martin R.
last_name: Hofmann
citation:
ama: Höpfner H, Fritsche C, Ludwig A, et al. Spin relaxation length in quantum dot
spin LEDs. physica status solidi (c). 2013;10(9):1214-1217. doi:10.1002/pssc.201200689
apa: Höpfner, H., Fritsche, C., Ludwig, A., Ludwig, A., Stromberg, F., Wende, H.,
… Hofmann, M. R. (2013). Spin relaxation length in quantum dot spin LEDs. Physica
Status Solidi (C), 10(9), 1214–1217. https://doi.org/10.1002/pssc.201200689
bibtex: '@article{Höpfner_Fritsche_Ludwig_Ludwig_Stromberg_Wende_Keune_Reuter_Wieck_Gerhardt_et
al._2013, title={Spin relaxation length in quantum dot spin LEDs}, volume={10},
DOI={10.1002/pssc.201200689},
number={9}, journal={physica status solidi (c)}, publisher={Wiley}, author={Höpfner,
Henning and Fritsche, Carola and Ludwig, Arne and Ludwig, Astrid and Stromberg,
Frank and Wende, Heiko and Keune, Werner and Reuter, Dirk and Wieck, Andreas D.
and Gerhardt, Nils C. and et al.}, year={2013}, pages={1214–1217} }'
chicago: 'Höpfner, Henning, Carola Fritsche, Arne Ludwig, Astrid Ludwig, Frank Stromberg,
Heiko Wende, Werner Keune, et al. “Spin Relaxation Length in Quantum Dot Spin
LEDs.” Physica Status Solidi (C) 10, no. 9 (2013): 1214–17. https://doi.org/10.1002/pssc.201200689.'
ieee: H. Höpfner et al., “Spin relaxation length in quantum dot spin LEDs,”
physica status solidi (c), vol. 10, no. 9, pp. 1214–1217, 2013.
mla: Höpfner, Henning, et al. “Spin Relaxation Length in Quantum Dot Spin LEDs.”
Physica Status Solidi (C), vol. 10, no. 9, Wiley, 2013, pp. 1214–17, doi:10.1002/pssc.201200689.
short: H. Höpfner, C. Fritsche, A. Ludwig, A. Ludwig, F. Stromberg, H. Wende, W.
Keune, D. Reuter, A.D. Wieck, N.C. Gerhardt, M.R. Hofmann, Physica Status Solidi
(C) 10 (2013) 1214–1217.
date_created: 2019-01-31T07:54:12Z
date_updated: 2022-01-06T07:03:31Z
department:
- _id: '15'
- _id: '230'
doi: 10.1002/pssc.201200689
intvolume: ' 10'
issue: '9'
language:
- iso: eng
page: 1214-1217
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: Spin relaxation length in quantum dot spin LEDs
type: journal_article
user_id: '42514'
volume: 10
year: '2013'
...
---
_id: '7282'
article_number: '085012'
author:
- first_name: J
full_name: Schuster, J
last_name: Schuster
- first_name: T Y
full_name: Kim, T Y
last_name: Kim
- first_name: E
full_name: Batke, E
last_name: Batke
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A D
full_name: Wieck, A D
last_name: Wieck
citation:
ama: Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Influence of recombination
center interaction on the photoluminescence of AlGaAs/GaAs heterostructures. Semiconductor
Science and Technology. 2013;28(8). doi:10.1088/0268-1242/28/8/085012
apa: Schuster, J., Kim, T. Y., Batke, E., Reuter, D., & Wieck, A. D. (2013).
Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs
heterostructures. Semiconductor Science and Technology, 28(8). https://doi.org/10.1088/0268-1242/28/8/085012
bibtex: '@article{Schuster_Kim_Batke_Reuter_Wieck_2013, title={Influence of recombination
center interaction on the photoluminescence of AlGaAs/GaAs heterostructures},
volume={28}, DOI={10.1088/0268-1242/28/8/085012},
number={8085012}, journal={Semiconductor Science and Technology}, publisher={IOP
Publishing}, author={Schuster, J and Kim, T Y and Batke, E and Reuter, Dirk and
Wieck, A D}, year={2013} }'
chicago: Schuster, J, T Y Kim, E Batke, Dirk Reuter, and A D Wieck. “Influence of
Recombination Center Interaction on the Photoluminescence of AlGaAs/GaAs Heterostructures.”
Semiconductor Science and Technology 28, no. 8 (2013). https://doi.org/10.1088/0268-1242/28/8/085012.
ieee: J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Influence of
recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures,”
Semiconductor Science and Technology, vol. 28, no. 8, 2013.
mla: Schuster, J., et al. “Influence of Recombination Center Interaction on the
Photoluminescence of AlGaAs/GaAs Heterostructures.” Semiconductor Science and
Technology, vol. 28, no. 8, 085012, IOP Publishing, 2013, doi:10.1088/0268-1242/28/8/085012.
short: J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science
and Technology 28 (2013).
date_created: 2019-01-31T08:01:35Z
date_updated: 2022-01-06T07:03:31Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/0268-1242/28/8/085012
intvolume: ' 28'
issue: '8'
language:
- iso: eng
publication: Semiconductor Science and Technology
publication_identifier:
issn:
- 0268-1242
- 1361-6641
publication_status: published
publisher: IOP Publishing
status: public
title: Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs
heterostructures
type: journal_article
user_id: '42514'
volume: 28
year: '2013'
...
---
_id: '7284'
author:
- first_name: M. S.
full_name: Kuznetsova, M. S.
last_name: Kuznetsova
- first_name: K.
full_name: Flisinski, K.
last_name: Flisinski
- first_name: I. Ya.
full_name: Gerlovin, I. Ya.
last_name: Gerlovin
- first_name: I. V.
full_name: Ignatiev, I. V.
last_name: Ignatiev
- first_name: K. V.
full_name: Kavokin, K. V.
last_name: Kavokin
- first_name: S. Yu.
full_name: Verbin, S. Yu.
last_name: Verbin
- first_name: D. R.
full_name: Yakovlev, D. R.
last_name: Yakovlev
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: M.
full_name: Bayer, M.
last_name: Bayer
citation:
ama: 'Kuznetsova MS, Flisinski K, Gerlovin IY, et al. Hanle effect in (In,Ga)As
quantum dots: Role of nuclear spin fluctuations. Physical Review B. 2013;87(23).
doi:10.1103/physrevb.87.235320'
apa: 'Kuznetsova, M. S., Flisinski, K., Gerlovin, I. Y., Ignatiev, I. V., Kavokin,
K. V., Verbin, S. Y., … Bayer, M. (2013). Hanle effect in (In,Ga)As quantum dots:
Role of nuclear spin fluctuations. Physical Review B, 87(23). https://doi.org/10.1103/physrevb.87.235320'
bibtex: '@article{Kuznetsova_Flisinski_Gerlovin_Ignatiev_Kavokin_Verbin_Yakovlev_Reuter_Wieck_Bayer_2013,
title={Hanle effect in (In,Ga)As quantum dots: Role of nuclear spin fluctuations},
volume={87}, DOI={10.1103/physrevb.87.235320},
number={23}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Kuznetsova, M. S. and Flisinski, K. and Gerlovin, I. Ya. and Ignatiev,
I. V. and Kavokin, K. V. and Verbin, S. Yu. and Yakovlev, D. R. and Reuter, Dirk
and Wieck, A. D. and Bayer, M.}, year={2013} }'
chicago: 'Kuznetsova, M. S., K. Flisinski, I. Ya. Gerlovin, I. V. Ignatiev, K. V.
Kavokin, S. Yu. Verbin, D. R. Yakovlev, Dirk Reuter, A. D. Wieck, and M. Bayer.
“Hanle Effect in (In,Ga)As Quantum Dots: Role of Nuclear Spin Fluctuations.” Physical
Review B 87, no. 23 (2013). https://doi.org/10.1103/physrevb.87.235320.'
ieee: 'M. S. Kuznetsova et al., “Hanle effect in (In,Ga)As quantum dots:
Role of nuclear spin fluctuations,” Physical Review B, vol. 87, no. 23,
2013.'
mla: 'Kuznetsova, M. S., et al. “Hanle Effect in (In,Ga)As Quantum Dots: Role of
Nuclear Spin Fluctuations.” Physical Review B, vol. 87, no. 23, American
Physical Society (APS), 2013, doi:10.1103/physrevb.87.235320.'
short: M.S. Kuznetsova, K. Flisinski, I.Y. Gerlovin, I.V. Ignatiev, K.V. Kavokin,
S.Y. Verbin, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physical Review B
87 (2013).
date_created: 2019-01-31T08:39:43Z
date_updated: 2022-01-06T07:03:32Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevb.87.235320
intvolume: ' 87'
issue: '23'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: 'Hanle effect in (In,Ga)As quantum dots: Role of nuclear spin fluctuations'
type: journal_article
user_id: '42514'
volume: 87
year: '2013'
...
---
_id: '7285'
author:
- first_name: Y.
full_name: Komijani, Y.
last_name: Komijani
- first_name: M.
full_name: Csontos, M.
last_name: Csontos
- first_name: T.
full_name: Ihn, T.
last_name: Ihn
- first_name: K.
full_name: Ensslin, K.
last_name: Ensslin
- first_name: Y.
full_name: Meir, Y.
last_name: Meir
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Komijani Y, Csontos M, Ihn T, et al. Origins of conductance anomalies in ap-type
GaAs quantum point contact. Physical Review B. 2013;87(24). doi:10.1103/physrevb.87.245406
apa: Komijani, Y., Csontos, M., Ihn, T., Ensslin, K., Meir, Y., Reuter, D., &
Wieck, A. D. (2013). Origins of conductance anomalies in ap-type GaAs quantum
point contact. Physical Review B, 87(24). https://doi.org/10.1103/physrevb.87.245406
bibtex: '@article{Komijani_Csontos_Ihn_Ensslin_Meir_Reuter_Wieck_2013, title={Origins
of conductance anomalies in ap-type GaAs quantum point contact}, volume={87},
DOI={10.1103/physrevb.87.245406},
number={24}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Komijani, Y. and Csontos, M. and Ihn, T. and Ensslin, K. and Meir,
Y. and Reuter, Dirk and Wieck, A. D.}, year={2013} }'
chicago: Komijani, Y., M. Csontos, T. Ihn, K. Ensslin, Y. Meir, Dirk Reuter, and
A. D. Wieck. “Origins of Conductance Anomalies in Ap-Type GaAs Quantum Point Contact.”
Physical Review B 87, no. 24 (2013). https://doi.org/10.1103/physrevb.87.245406.
ieee: Y. Komijani et al., “Origins of conductance anomalies in ap-type GaAs
quantum point contact,” Physical Review B, vol. 87, no. 24, 2013.
mla: Komijani, Y., et al. “Origins of Conductance Anomalies in Ap-Type GaAs Quantum
Point Contact.” Physical Review B, vol. 87, no. 24, American Physical Society
(APS), 2013, doi:10.1103/physrevb.87.245406.
short: Y. Komijani, M. Csontos, T. Ihn, K. Ensslin, Y. Meir, D. Reuter, A.D. Wieck,
Physical Review B 87 (2013).
date_created: 2019-01-31T08:43:51Z
date_updated: 2022-01-06T07:03:32Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevb.87.245406
intvolume: ' 87'
issue: '24'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Origins of conductance anomalies in ap-type GaAs quantum point contact
type: journal_article
user_id: '42514'
volume: 87
year: '2013'
...
---
_id: '7286'
author:
- first_name: Genziana
full_name: Bussone, Genziana
last_name: Bussone
- first_name: Rüdiger
full_name: Schott, Rüdiger
last_name: Schott
- first_name: Andreas
full_name: Biermanns, Andreas
last_name: Biermanns
- first_name: Anton
full_name: Davydok, Anton
last_name: Davydok
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Gerardina
full_name: Carbone, Gerardina
last_name: Carbone
- first_name: Tobias U.
full_name: Schülli, Tobias U.
last_name: Schülli
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Ullrich
full_name: Pietsch, Ullrich
last_name: Pietsch
citation:
ama: Bussone G, Schott R, Biermanns A, et al. Grazing-incidence X-ray diffraction
of single GaAs nanowires at locations defined by focused ion beams. Journal
of Applied Crystallography. 2013;46(4):887-892. doi:10.1107/s0021889813004226
apa: Bussone, G., Schott, R., Biermanns, A., Davydok, A., Reuter, D., Carbone, G.,
… Pietsch, U. (2013). Grazing-incidence X-ray diffraction of single GaAs nanowires
at locations defined by focused ion beams. Journal of Applied Crystallography,
46(4), 887–892. https://doi.org/10.1107/s0021889813004226
bibtex: '@article{Bussone_Schott_Biermanns_Davydok_Reuter_Carbone_Schülli_Wieck_Pietsch_2013,
title={Grazing-incidence X-ray diffraction of single GaAs nanowires at locations
defined by focused ion beams}, volume={46}, DOI={10.1107/s0021889813004226},
number={4}, journal={Journal of Applied Crystallography}, publisher={International
Union of Crystallography (IUCr)}, author={Bussone, Genziana and Schott, Rüdiger
and Biermanns, Andreas and Davydok, Anton and Reuter, Dirk and Carbone, Gerardina
and Schülli, Tobias U. and Wieck, Andreas D. and Pietsch, Ullrich}, year={2013},
pages={887–892} }'
chicago: 'Bussone, Genziana, Rüdiger Schott, Andreas Biermanns, Anton Davydok, Dirk
Reuter, Gerardina Carbone, Tobias U. Schülli, Andreas D. Wieck, and Ullrich Pietsch.
“Grazing-Incidence X-Ray Diffraction of Single GaAs Nanowires at Locations Defined
by Focused Ion Beams.” Journal of Applied Crystallography 46, no. 4 (2013):
887–92. https://doi.org/10.1107/s0021889813004226.'
ieee: G. Bussone et al., “Grazing-incidence X-ray diffraction of single GaAs
nanowires at locations defined by focused ion beams,” Journal of Applied Crystallography,
vol. 46, no. 4, pp. 887–892, 2013.
mla: Bussone, Genziana, et al. “Grazing-Incidence X-Ray Diffraction of Single GaAs
Nanowires at Locations Defined by Focused Ion Beams.” Journal of Applied Crystallography,
vol. 46, no. 4, International Union of Crystallography (IUCr), 2013, pp. 887–92,
doi:10.1107/s0021889813004226.
short: G. Bussone, R. Schott, A. Biermanns, A. Davydok, D. Reuter, G. Carbone, T.U.
Schülli, A.D. Wieck, U. Pietsch, Journal of Applied Crystallography 46 (2013)
887–892.
date_created: 2019-01-31T08:45:31Z
date_updated: 2022-01-06T07:03:32Z
department:
- _id: '15'
- _id: '230'
doi: 10.1107/s0021889813004226
intvolume: ' 46'
issue: '4'
language:
- iso: eng
page: 887-892
publication: Journal of Applied Crystallography
publication_identifier:
issn:
- 0021-8898
publication_status: published
publisher: International Union of Crystallography (IUCr)
status: public
title: Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined
by focused ion beams
type: journal_article
user_id: '42514'
volume: 46
year: '2013'
...
---
_id: '7287'
author:
- first_name: D. Q.
full_name: Wang, D. Q.
last_name: Wang
- first_name: J. C. H.
full_name: Chen, J. C. H.
last_name: Chen
- first_name: O.
full_name: Klochan, O.
last_name: Klochan
- first_name: K.
full_name: Das Gupta, K.
last_name: Das Gupta
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: D. A.
full_name: Ritchie, D. A.
last_name: Ritchie
- first_name: A. R.
full_name: Hamilton, A. R.
last_name: Hamilton
citation:
ama: Wang DQ, Chen JCH, Klochan O, et al. Influence of surface states on quantum
and transport lifetimes in high-quality undoped heterostructures. Physical
Review B. 2013;87(19). doi:10.1103/physrevb.87.195313
apa: Wang, D. Q., Chen, J. C. H., Klochan, O., Das Gupta, K., Reuter, D., Wieck,
A. D., … Hamilton, A. R. (2013). Influence of surface states on quantum and transport
lifetimes in high-quality undoped heterostructures. Physical Review B,
87(19). https://doi.org/10.1103/physrevb.87.195313
bibtex: '@article{Wang_Chen_Klochan_Das Gupta_Reuter_Wieck_Ritchie_Hamilton_2013,
title={Influence of surface states on quantum and transport lifetimes in high-quality
undoped heterostructures}, volume={87}, DOI={10.1103/physrevb.87.195313},
number={19}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Wang, D. Q. and Chen, J. C. H. and Klochan, O. and Das Gupta,
K. and Reuter, Dirk and Wieck, A. D. and Ritchie, D. A. and Hamilton, A. R.},
year={2013} }'
chicago: Wang, D. Q., J. C. H. Chen, O. Klochan, K. Das Gupta, Dirk Reuter, A. D.
Wieck, D. A. Ritchie, and A. R. Hamilton. “Influence of Surface States on Quantum
and Transport Lifetimes in High-Quality Undoped Heterostructures.” Physical
Review B 87, no. 19 (2013). https://doi.org/10.1103/physrevb.87.195313.
ieee: D. Q. Wang et al., “Influence of surface states on quantum and transport
lifetimes in high-quality undoped heterostructures,” Physical Review B,
vol. 87, no. 19, 2013.
mla: Wang, D. Q., et al. “Influence of Surface States on Quantum and Transport Lifetimes
in High-Quality Undoped Heterostructures.” Physical Review B, vol. 87,
no. 19, American Physical Society (APS), 2013, doi:10.1103/physrevb.87.195313.
short: D.Q. Wang, J.C.H. Chen, O. Klochan, K. Das Gupta, D. Reuter, A.D. Wieck,
D.A. Ritchie, A.R. Hamilton, Physical Review B 87 (2013).
date_created: 2019-01-31T08:46:35Z
date_updated: 2022-01-06T07:03:32Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevb.87.195313
intvolume: ' 87'
issue: '19'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Influence of surface states on quantum and transport lifetimes in high-quality
undoped heterostructures
type: journal_article
user_id: '42514'
volume: 87
year: '2013'
...