---
_id: '7715'
article_number: '012097'
author:
- first_name: F-Y
full_name: Lo, F-Y
last_name: Lo
- first_name: J-Y
full_name: Guo, J-Y
last_name: Guo
- first_name: V
full_name: Ney, V
last_name: Ney
- first_name: A
full_name: Ney, A
last_name: Ney
- first_name: M-Y
full_name: Chern, M-Y
last_name: Chern
- first_name: A
full_name: Melnikov, A
last_name: Melnikov
- first_name: S
full_name: Pezzagna, S
last_name: Pezzagna
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A D
full_name: Wieck, A D
last_name: Wieck
- first_name: J
full_name: Massies, J
last_name: Massies
citation:
ama: 'Lo F-Y, Guo J-Y, Ney V, et al. Structural, optical, and magnetic properties
of Ho-implanted GaN thin films. Journal of Physics: Conference Series.
2011;266. doi:10.1088/1742-6596/266/1/012097'
apa: 'Lo, F.-Y., Guo, J.-Y., Ney, V., Ney, A., Chern, M.-Y., Melnikov, A., … Massies,
J. (2011). Structural, optical, and magnetic properties of Ho-implanted GaN thin
films. Journal of Physics: Conference Series, 266. https://doi.org/10.1088/1742-6596/266/1/012097'
bibtex: '@article{Lo_Guo_Ney_Ney_Chern_Melnikov_Pezzagna_Reuter_Wieck_Massies_2011,
title={Structural, optical, and magnetic properties of Ho-implanted GaN thin films},
volume={266}, DOI={10.1088/1742-6596/266/1/012097},
number={012097}, journal={Journal of Physics: Conference Series}, publisher={IOP
Publishing}, author={Lo, F-Y and Guo, J-Y and Ney, V and Ney, A and Chern, M-Y
and Melnikov, A and Pezzagna, S and Reuter, Dirk and Wieck, A D and Massies, J},
year={2011} }'
chicago: 'Lo, F-Y, J-Y Guo, V Ney, A Ney, M-Y Chern, A Melnikov, S Pezzagna, Dirk
Reuter, A D Wieck, and J Massies. “Structural, Optical, and Magnetic Properties
of Ho-Implanted GaN Thin Films.” Journal of Physics: Conference Series
266 (2011). https://doi.org/10.1088/1742-6596/266/1/012097.'
ieee: 'F.-Y. Lo et al., “Structural, optical, and magnetic properties of
Ho-implanted GaN thin films,” Journal of Physics: Conference Series, vol.
266, 2011.'
mla: 'Lo, F. Y., et al. “Structural, Optical, and Magnetic Properties of Ho-Implanted
GaN Thin Films.” Journal of Physics: Conference Series, vol. 266, 012097,
IOP Publishing, 2011, doi:10.1088/1742-6596/266/1/012097.'
short: 'F.-Y. Lo, J.-Y. Guo, V. Ney, A. Ney, M.-Y. Chern, A. Melnikov, S. Pezzagna,
D. Reuter, A.D. Wieck, J. Massies, Journal of Physics: Conference Series 266 (2011).'
date_created: 2019-02-14T10:38:13Z
date_updated: 2022-01-06T07:03:45Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/1742-6596/266/1/012097
intvolume: ' 266'
language:
- iso: eng
publication: 'Journal of Physics: Conference Series'
publication_identifier:
issn:
- 1742-6596
publication_status: published
publisher: IOP Publishing
status: public
title: Structural, optical, and magnetic properties of Ho-implanted GaN thin films
type: journal_article
user_id: '42514'
volume: 266
year: '2011'
...
---
_id: '7716'
author:
- first_name: M.
full_name: Cerchez, M.
last_name: Cerchez
- first_name: A.
full_name: Tarasov, A.
last_name: Tarasov
- first_name: S.
full_name: Hugger, S.
last_name: Hugger
- first_name: Hengyi
full_name: Xu, Hengyi
last_name: Xu
- first_name: T.
full_name: Heinzel, T.
last_name: Heinzel
- first_name: I. V.
full_name: Zozoulenko, I. V.
last_name: Zozoulenko
- first_name: U.
full_name: Gasser-Szerer, U.
last_name: Gasser-Szerer
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: Jisoon
full_name: Ihm, Jisoon
last_name: Ihm
- first_name: Hyeonsik
full_name: Cheong, Hyeonsik
last_name: Cheong
citation:
ama: 'Cerchez M, Tarasov A, Hugger S, et al. Towards the quantized magnetic confinement
in quantum wires. In: AIP; 2011. doi:10.1063/1.3666392'
apa: Cerchez, M., Tarasov, A., Hugger, S., Xu, H., Heinzel, T., Zozoulenko, I. V.,
… Cheong, H. (2011). Towards the quantized magnetic confinement in quantum wires.
AIP. https://doi.org/10.1063/1.3666392
bibtex: '@inproceedings{Cerchez_Tarasov_Hugger_Xu_Heinzel_Zozoulenko_Gasser-Szerer_Reuter_Wieck_Ihm_et
al._2011, title={Towards the quantized magnetic confinement in quantum wires},
DOI={10.1063/1.3666392}, publisher={AIP},
author={Cerchez, M. and Tarasov, A. and Hugger, S. and Xu, Hengyi and Heinzel,
T. and Zozoulenko, I. V. and Gasser-Szerer, U. and Reuter, Dirk and Wieck, A.
D. and Ihm, Jisoon and et al.}, year={2011} }'
chicago: Cerchez, M., A. Tarasov, S. Hugger, Hengyi Xu, T. Heinzel, I. V. Zozoulenko,
U. Gasser-Szerer, et al. “Towards the Quantized Magnetic Confinement in Quantum
Wires.” AIP, 2011. https://doi.org/10.1063/1.3666392.
ieee: M. Cerchez et al., “Towards the quantized magnetic confinement in quantum
wires,” 2011.
mla: Cerchez, M., et al. Towards the Quantized Magnetic Confinement in Quantum
Wires. AIP, 2011, doi:10.1063/1.3666392.
short: 'M. Cerchez, A. Tarasov, S. Hugger, H. Xu, T. Heinzel, I.V. Zozoulenko, U.
Gasser-Szerer, D. Reuter, A.D. Wieck, J. Ihm, H. Cheong, in: AIP, 2011.'
date_created: 2019-02-14T10:39:07Z
date_updated: 2022-01-06T07:03:45Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3666392
language:
- iso: eng
publication_status: published
publisher: AIP
status: public
title: Towards the quantized magnetic confinement in quantum wires
type: conference
user_id: '42514'
year: '2011'
...
---
_id: '7717'
author:
- first_name: Bastian
full_name: Marquardt, Bastian
last_name: Marquardt
- first_name: Martin
full_name: Geller, Martin
last_name: Geller
- first_name: Benjamin
full_name: Baxevanis, Benjamin
last_name: Baxevanis
- first_name: Daniela
full_name: Pfannkuche, Daniela
last_name: Pfannkuche
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
- first_name: Jisoon
full_name: Ihm, Jisoon
last_name: Ihm
- first_name: Hyeonsik
full_name: Cheong, Hyeonsik
last_name: Cheong
citation:
ama: 'Marquardt B, Geller M, Baxevanis B, et al. All-electrical transport spectroscopy
of non-equilibrium many-particle states in self-assembled quantum dots. In: AIP;
2011. doi:10.1063/1.3666398'
apa: Marquardt, B., Geller, M., Baxevanis, B., Pfannkuche, D., Wieck, A. D., Reuter,
D., … Cheong, H. (2011). All-electrical transport spectroscopy of non-equilibrium
many-particle states in self-assembled quantum dots. AIP. https://doi.org/10.1063/1.3666398
bibtex: '@inproceedings{Marquardt_Geller_Baxevanis_Pfannkuche_Wieck_Reuter_Lorke_Ihm_Cheong_2011,
title={All-electrical transport spectroscopy of non-equilibrium many-particle
states in self-assembled quantum dots}, DOI={10.1063/1.3666398},
publisher={AIP}, author={Marquardt, Bastian and Geller, Martin and Baxevanis,
Benjamin and Pfannkuche, Daniela and Wieck, Andreas D. and Reuter, Dirk and Lorke,
Axel and Ihm, Jisoon and Cheong, Hyeonsik}, year={2011} }'
chicago: Marquardt, Bastian, Martin Geller, Benjamin Baxevanis, Daniela Pfannkuche,
Andreas D. Wieck, Dirk Reuter, Axel Lorke, Jisoon Ihm, and Hyeonsik Cheong. “All-Electrical
Transport Spectroscopy of Non-Equilibrium Many-Particle States in Self-Assembled
Quantum Dots.” AIP, 2011. https://doi.org/10.1063/1.3666398.
ieee: B. Marquardt et al., “All-electrical transport spectroscopy of non-equilibrium
many-particle states in self-assembled quantum dots,” 2011.
mla: Marquardt, Bastian, et al. All-Electrical Transport Spectroscopy of Non-Equilibrium
Many-Particle States in Self-Assembled Quantum Dots. AIP, 2011, doi:10.1063/1.3666398.
short: 'B. Marquardt, M. Geller, B. Baxevanis, D. Pfannkuche, A.D. Wieck, D. Reuter,
A. Lorke, J. Ihm, H. Cheong, in: AIP, 2011.'
date_created: 2019-02-14T10:40:14Z
date_updated: 2022-01-06T07:03:45Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3666398
language:
- iso: eng
publication_status: published
publisher: AIP
status: public
title: All-electrical transport spectroscopy of non-equilibrium many-particle states
in self-assembled quantum dots
type: conference
user_id: '42514'
year: '2011'
...
---
_id: '7718'
author:
- first_name: C. H.
full_name: van der Wal, C. H.
last_name: van der Wal
- first_name: M.
full_name: Sladkov, M.
last_name: Sladkov
- first_name: A. U.
full_name: Chaubal, A. U.
last_name: Chaubal
- first_name: M. P.
full_name: Bakker, M. P.
last_name: Bakker
- first_name: A. R.
full_name: Onur, A. R.
last_name: Onur
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: Jisoon
full_name: Ihm, Jisoon
last_name: Ihm
- first_name: Hyeonsik
full_name: Cheong, Hyeonsik
last_name: Cheong
citation:
ama: 'van der Wal CH, Sladkov M, Chaubal AU, et al. Electromagnetically induced
transparency in low-doped n-GaAs. In: AIP; 2011. doi:10.1063/1.3666734'
apa: van der Wal, C. H., Sladkov, M., Chaubal, A. U., Bakker, M. P., Onur, A. R.,
Reuter, D., … Cheong, H. (2011). Electromagnetically induced transparency in low-doped
n-GaAs. AIP. https://doi.org/10.1063/1.3666734
bibtex: '@inproceedings{van der Wal_Sladkov_Chaubal_Bakker_Onur_Reuter_Wieck_Ihm_Cheong_2011,
title={Electromagnetically induced transparency in low-doped n-GaAs}, DOI={10.1063/1.3666734}, publisher={AIP},
author={van der Wal, C. H. and Sladkov, M. and Chaubal, A. U. and Bakker, M. P.
and Onur, A. R. and Reuter, Dirk and Wieck, A. D. and Ihm, Jisoon and Cheong,
Hyeonsik}, year={2011} }'
chicago: Wal, C. H. van der, M. Sladkov, A. U. Chaubal, M. P. Bakker, A. R. Onur,
Dirk Reuter, A. D. Wieck, Jisoon Ihm, and Hyeonsik Cheong. “Electromagnetically
Induced Transparency in Low-Doped n-GaAs.” AIP, 2011. https://doi.org/10.1063/1.3666734.
ieee: C. H. van der Wal et al., “Electromagnetically induced transparency
in low-doped n-GaAs,” 2011.
mla: van der Wal, C. H., et al. Electromagnetically Induced Transparency in Low-Doped
n-GaAs. AIP, 2011, doi:10.1063/1.3666734.
short: 'C.H. van der Wal, M. Sladkov, A.U. Chaubal, M.P. Bakker, A.R. Onur, D. Reuter,
A.D. Wieck, J. Ihm, H. Cheong, in: AIP, 2011.'
date_created: 2019-02-14T10:40:59Z
date_updated: 2022-01-06T07:03:45Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3666734
language:
- iso: eng
publication_status: published
publisher: AIP
status: public
title: Electromagnetically induced transparency in low-doped n-GaAs
type: conference
user_id: '42514'
year: '2011'
...
---
_id: '7719'
article_number: '016106'
author:
- first_name: Y. S.
full_name: Chen, Y. S.
last_name: Chen
- first_name: J.
full_name: Huang, J.
last_name: Huang
- first_name: A.
full_name: Ludwig, A.
last_name: Ludwig
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: G.
full_name: Bacher, G.
last_name: Bacher
citation:
ama: Chen YS, Huang J, Ludwig A, Reuter D, Wieck AD, Bacher G. Manipulation of nuclear
spin dynamics in n-GaAs using an on-chip microcoil. Journal of Applied Physics.
2011;109(1). doi:10.1063/1.3530731
apa: Chen, Y. S., Huang, J., Ludwig, A., Reuter, D., Wieck, A. D., & Bacher,
G. (2011). Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil.
Journal of Applied Physics, 109(1). https://doi.org/10.1063/1.3530731
bibtex: '@article{Chen_Huang_Ludwig_Reuter_Wieck_Bacher_2011, title={Manipulation
of nuclear spin dynamics in n-GaAs using an on-chip microcoil}, volume={109},
DOI={10.1063/1.3530731}, number={1016106},
journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Chen,
Y. S. and Huang, J. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Bacher,
G.}, year={2011} }'
chicago: Chen, Y. S., J. Huang, A. Ludwig, Dirk Reuter, A. D. Wieck, and G. Bacher.
“Manipulation of Nuclear Spin Dynamics in N-GaAs Using an on-Chip Microcoil.”
Journal of Applied Physics 109, no. 1 (2011). https://doi.org/10.1063/1.3530731.
ieee: Y. S. Chen, J. Huang, A. Ludwig, D. Reuter, A. D. Wieck, and G. Bacher, “Manipulation
of nuclear spin dynamics in n-GaAs using an on-chip microcoil,” Journal of
Applied Physics, vol. 109, no. 1, 2011.
mla: Chen, Y. S., et al. “Manipulation of Nuclear Spin Dynamics in N-GaAs Using
an on-Chip Microcoil.” Journal of Applied Physics, vol. 109, no. 1, 016106,
AIP Publishing, 2011, doi:10.1063/1.3530731.
short: Y.S. Chen, J. Huang, A. Ludwig, D. Reuter, A.D. Wieck, G. Bacher, Journal
of Applied Physics 109 (2011).
date_created: 2019-02-14T10:41:44Z
date_updated: 2022-01-06T07:03:45Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3530731
intvolume: ' 109'
issue: '1'
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil
type: journal_article
user_id: '42514'
volume: 109
year: '2011'
...
---
_id: '4544'
abstract:
- lang: eng
text: The existence of localized vibrational modes both at the positive and at the
negative LiNbO3 (0001) surface is demonstrated by means of first-principles calculations
and Raman spectroscopy measurements. First, the phonon modes of the crystal bulk
and of the (0001) surface are calculated within the density functional theory.
In a second step, the Raman spectra of LiNbO3 bulk and of the two surfaces are
measured. The phonon modes localized at the two surfaces are found to be substantially
different, and are also found to differ from the bulk modes. The calculated and
measured frequencies are in agreement within the error of the method. Raman spectroscopy
is shown to be sensitive to differences between bulk and surface and between positive
and negative surface. It represents therefore an alternative method to determine
the surface polarity, which does not exploit the pyroelectric or piezoelectric
properties of the material.
article_type: original
author:
- first_name: S.
full_name: Sanna, S.
last_name: Sanna
- first_name: Gerhard
full_name: Berth, Gerhard
id: '53'
last_name: Berth
- first_name: W.
full_name: Hahn, W.
last_name: Hahn
- first_name: A.
full_name: Widhalm, A.
last_name: Widhalm
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: W. G.
full_name: Schmidt, W. G.
last_name: Schmidt
citation:
ama: Sanna S, Berth G, Hahn W, Widhalm A, Zrenner A, Schmidt WG. Vibrational properties
of the LiNbO3 z-surfaces. IEEE Transactions on Ultrasonics, Ferroelectrics
and Frequency Control. 2011;58(9):1751-1756. doi:10.1109/tuffc.2011.2012
apa: Sanna, S., Berth, G., Hahn, W., Widhalm, A., Zrenner, A., & Schmidt, W.
G. (2011). Vibrational properties of the LiNbO3 z-surfaces. IEEE Transactions
on Ultrasonics, Ferroelectrics and Frequency Control, 58(9), 1751–1756.
https://doi.org/10.1109/tuffc.2011.2012
bibtex: '@article{Sanna_Berth_Hahn_Widhalm_Zrenner_Schmidt_2011, title={Vibrational
properties of the LiNbO3 z-surfaces}, volume={58}, DOI={10.1109/tuffc.2011.2012},
number={9}, journal={IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency
Control}, publisher={Institute of Electrical and Electronics Engineers (IEEE)},
author={Sanna, S. and Berth, Gerhard and Hahn, W. and Widhalm, A. and Zrenner,
Artur and Schmidt, W. G.}, year={2011}, pages={1751–1756} }'
chicago: 'Sanna, S., Gerhard Berth, W. Hahn, A. Widhalm, Artur Zrenner, and W. G.
Schmidt. “Vibrational Properties of the LiNbO3 Z-Surfaces.” IEEE Transactions
on Ultrasonics, Ferroelectrics and Frequency Control 58, no. 9 (2011): 1751–56.
https://doi.org/10.1109/tuffc.2011.2012.'
ieee: S. Sanna, G. Berth, W. Hahn, A. Widhalm, A. Zrenner, and W. G. Schmidt, “Vibrational
properties of the LiNbO3 z-surfaces,” IEEE Transactions on Ultrasonics, Ferroelectrics
and Frequency Control, vol. 58, no. 9, pp. 1751–1756, 2011.
mla: Sanna, S., et al. “Vibrational Properties of the LiNbO3 Z-Surfaces.” IEEE
Transactions on Ultrasonics, Ferroelectrics and Frequency Control, vol. 58,
no. 9, Institute of Electrical and Electronics Engineers (IEEE), 2011, pp. 1751–56,
doi:10.1109/tuffc.2011.2012.
short: S. Sanna, G. Berth, W. Hahn, A. Widhalm, A. Zrenner, W.G. Schmidt, IEEE Transactions
on Ultrasonics, Ferroelectrics and Frequency Control 58 (2011) 1751–1756.
date_created: 2018-09-20T11:33:31Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1109/tuffc.2011.2012
intvolume: ' 58'
issue: '9'
language:
- iso: eng
page: 1751-1756
publication: IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control
publication_identifier:
issn:
- 0885-3010
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: Vibrational properties of the LiNbO3 z-surfaces
type: journal_article
user_id: '49428'
volume: 58
year: '2011'
...
---
_id: '4545'
abstract:
- lang: eng
text: Laser irradiation damage in ZnTe epilayers was analyzed in situ by power-density-dependent
and time-resolved micro-Raman spectroscopy. Damage by ablation or compound decomposition
on the sample surface was revealed by the decrease of the ZnTe–nLO mode intensity
with the increase of laser power density. The appearance of the peaks associated
with the stronger crystalline-tellurium modes, tellurium aggregates and second-order
Raman scattering at room temperature μ-Raman spectra was observed for higher power
densities than 4.4 × 105 W cm−2. The Raman signal time transients of ZnTe–nLO
and crystalline-tellurium modes reveal an exponential evolution of the laser irradiation
damage and a fast formation of crystalline tellurium aggregates on the layer surface.
article_number: '105023'
article_type: original
author:
- first_name: V
full_name: Wiedemeier, V
last_name: Wiedemeier
- first_name: Gerhard
full_name: Berth, Gerhard
id: '53'
last_name: Berth
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: E M
full_name: Larramendi, E M
last_name: Larramendi
- first_name: U
full_name: Woggon, U
last_name: Woggon
- first_name: K
full_name: Lischka, K
last_name: Lischka
- first_name: D
full_name: Schikora, D
last_name: Schikora
citation:
ama: Wiedemeier V, Berth G, Zrenner A, et al. In situ characterization of ZnTe epilayer
irradiation via time-resolved and power-density-dependent Raman spectroscopy.
Semiconductor Science and Technology. 2011;26(10). doi:10.1088/0268-1242/26/10/105023
apa: Wiedemeier, V., Berth, G., Zrenner, A., Larramendi, E. M., Woggon, U., Lischka,
K., & Schikora, D. (2011). In situ characterization of ZnTe epilayer irradiation
via time-resolved and power-density-dependent Raman spectroscopy. Semiconductor
Science and Technology, 26(10). https://doi.org/10.1088/0268-1242/26/10/105023
bibtex: '@article{Wiedemeier_Berth_Zrenner_Larramendi_Woggon_Lischka_Schikora_2011,
title={In situ characterization of ZnTe epilayer irradiation via time-resolved
and power-density-dependent Raman spectroscopy}, volume={26}, DOI={10.1088/0268-1242/26/10/105023},
number={10105023}, journal={Semiconductor Science and Technology}, publisher={IOP
Publishing}, author={Wiedemeier, V and Berth, Gerhard and Zrenner, Artur and Larramendi,
E M and Woggon, U and Lischka, K and Schikora, D}, year={2011} }'
chicago: Wiedemeier, V, Gerhard Berth, Artur Zrenner, E M Larramendi, U Woggon,
K Lischka, and D Schikora. “In Situ Characterization of ZnTe Epilayer Irradiation
via Time-Resolved and Power-Density-Dependent Raman Spectroscopy.” Semiconductor
Science and Technology 26, no. 10 (2011). https://doi.org/10.1088/0268-1242/26/10/105023.
ieee: V. Wiedemeier et al., “In situ characterization of ZnTe epilayer irradiation
via time-resolved and power-density-dependent Raman spectroscopy,” Semiconductor
Science and Technology, vol. 26, no. 10, 2011.
mla: Wiedemeier, V., et al. “In Situ Characterization of ZnTe Epilayer Irradiation
via Time-Resolved and Power-Density-Dependent Raman Spectroscopy.” Semiconductor
Science and Technology, vol. 26, no. 10, 105023, IOP Publishing, 2011, doi:10.1088/0268-1242/26/10/105023.
short: V. Wiedemeier, G. Berth, A. Zrenner, E.M. Larramendi, U. Woggon, K. Lischka,
D. Schikora, Semiconductor Science and Technology 26 (2011).
date_created: 2018-09-20T11:36:28Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1088/0268-1242/26/10/105023
intvolume: ' 26'
issue: '10'
language:
- iso: eng
publication: Semiconductor Science and Technology
publication_identifier:
issn:
- 0268-1242
- 1361-6641
publication_status: published
publisher: IOP Publishing
status: public
title: In situ characterization of ZnTe epilayer irradiation via time-resolved and
power-density-dependent Raman spectroscopy
type: journal_article
user_id: '49428'
volume: 26
year: '2011'
...
---
_id: '4546'
abstract:
- lang: eng
text: Silicon oxynitride (SiON) layers for telecommunication device application
are grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) for various gas
compositions of SiH4, N2O and NH3. Processing and annealing effects on the oxynitride
films were studied by Fourier Transform Infrared Spectroscopy (FTIR) and Atomic
Force Microscopy (AFM) measurements. By reduction of the silane (SiH4) gas flow
and enhancement of the PECVD deposition temperature, the absorption loss due to
NH bands can be nearly completely erased. Furthermore the surface roughness can
be reduced by decreasing the gas flow and rising the deposition temperature. First
waveguide structures are introduced and their characterization is presented.
author:
- first_name: Torsten
full_name: Frers, Torsten
last_name: Frers
- first_name: Thomas
full_name: Hett, Thomas
last_name: Hett
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
last_name: Hilleringmann
- first_name: Gerhard
full_name: Berth, Gerhard
id: '53'
last_name: Berth
- first_name: Alex
full_name: Widhalm, Alex
last_name: Widhalm
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
citation:
ama: 'Frers T, Hett T, Hilleringmann U, Berth G, Widhalm A, Zrenner A. Characterization
of SiON integrated waveguides via FTIR and AFM measurements. In: 2011 Semiconductor
Conference Dresden. IEEE; 2011. doi:10.1109/scd.2011.6068744'
apa: 'Frers, T., Hett, T., Hilleringmann, U., Berth, G., Widhalm, A., & Zrenner,
A. (2011). Characterization of SiON integrated waveguides via FTIR and AFM measurements.
In 2011 Semiconductor Conference Dresden. Dresden, Germany: IEEE. https://doi.org/10.1109/scd.2011.6068744'
bibtex: '@inproceedings{Frers_Hett_Hilleringmann_Berth_Widhalm_Zrenner_2011, title={Characterization
of SiON integrated waveguides via FTIR and AFM measurements}, DOI={10.1109/scd.2011.6068744},
booktitle={2011 Semiconductor Conference Dresden}, publisher={IEEE}, author={Frers,
Torsten and Hett, Thomas and Hilleringmann, Ulrich and Berth, Gerhard and Widhalm,
Alex and Zrenner, Artur}, year={2011} }'
chicago: Frers, Torsten, Thomas Hett, Ulrich Hilleringmann, Gerhard Berth, Alex
Widhalm, and Artur Zrenner. “Characterization of SiON Integrated Waveguides via
FTIR and AFM Measurements.” In 2011 Semiconductor Conference Dresden. IEEE,
2011. https://doi.org/10.1109/scd.2011.6068744.
ieee: T. Frers, T. Hett, U. Hilleringmann, G. Berth, A. Widhalm, and A. Zrenner,
“Characterization of SiON integrated waveguides via FTIR and AFM measurements,”
in 2011 Semiconductor Conference Dresden, Dresden, Germany, 2011.
mla: Frers, Torsten, et al. “Characterization of SiON Integrated Waveguides via
FTIR and AFM Measurements.” 2011 Semiconductor Conference Dresden, IEEE,
2011, doi:10.1109/scd.2011.6068744.
short: 'T. Frers, T. Hett, U. Hilleringmann, G. Berth, A. Widhalm, A. Zrenner, in:
2011 Semiconductor Conference Dresden, IEEE, 2011.'
conference:
end_date: 2011-09-28
location: Dresden, Germany
name: 2011 Semiconductor Conference Dresden
start_date: 2011-09-27
date_created: 2018-09-20T11:44:50Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1109/scd.2011.6068744
language:
- iso: eng
publication: 2011 Semiconductor Conference Dresden
publication_identifier:
isbn:
- '9781457704314'
publication_status: published
publisher: IEEE
status: public
title: Characterization of SiON integrated waveguides via FTIR and AFM measurements
type: conference
user_id: '49428'
year: '2011'
...
---
_id: '7311'
article_number: '051102'
author:
- first_name: Henning
full_name: Soldat, Henning
last_name: Soldat
- first_name: Mingyuan
full_name: Li, Mingyuan
last_name: Li
- first_name: Nils C.
full_name: Gerhardt, Nils C.
last_name: Gerhardt
- first_name: Martin R.
full_name: Hofmann, Martin R.
last_name: Hofmann
- first_name: Arne
full_name: Ludwig, Arne
last_name: Ludwig
- first_name: Astrid
full_name: Ebbing, Astrid
last_name: Ebbing
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Frank
full_name: Stromberg, Frank
last_name: Stromberg
- first_name: Werner
full_name: Keune, Werner
last_name: Keune
- first_name: Heiko
full_name: Wende, Heiko
last_name: Wende
citation:
ama: Soldat H, Li M, Gerhardt NC, et al. Room temperature spin relaxation length
in spin light-emitting diodes. Applied Physics Letters. 2011;99(5). doi:10.1063/1.3622662
apa: Soldat, H., Li, M., Gerhardt, N. C., Hofmann, M. R., Ludwig, A., Ebbing, A.,
… Wende, H. (2011). Room temperature spin relaxation length in spin light-emitting
diodes. Applied Physics Letters, 99(5). https://doi.org/10.1063/1.3622662
bibtex: '@article{Soldat_Li_Gerhardt_Hofmann_Ludwig_Ebbing_Reuter_Wieck_Stromberg_Keune_et
al._2011, title={Room temperature spin relaxation length in spin light-emitting
diodes}, volume={99}, DOI={10.1063/1.3622662},
number={5051102}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Soldat, Henning and Li, Mingyuan and Gerhardt, Nils C. and Hofmann, Martin
R. and Ludwig, Arne and Ebbing, Astrid and Reuter, Dirk and Wieck, Andreas D.
and Stromberg, Frank and Keune, Werner and et al.}, year={2011} }'
chicago: Soldat, Henning, Mingyuan Li, Nils C. Gerhardt, Martin R. Hofmann, Arne
Ludwig, Astrid Ebbing, Dirk Reuter, et al. “Room Temperature Spin Relaxation Length
in Spin Light-Emitting Diodes.” Applied Physics Letters 99, no. 5 (2011).
https://doi.org/10.1063/1.3622662.
ieee: H. Soldat et al., “Room temperature spin relaxation length in spin
light-emitting diodes,” Applied Physics Letters, vol. 99, no. 5, 2011.
mla: Soldat, Henning, et al. “Room Temperature Spin Relaxation Length in Spin Light-Emitting
Diodes.” Applied Physics Letters, vol. 99, no. 5, 051102, AIP Publishing,
2011, doi:10.1063/1.3622662.
short: H. Soldat, M. Li, N.C. Gerhardt, M.R. Hofmann, A. Ludwig, A. Ebbing, D. Reuter,
A.D. Wieck, F. Stromberg, W. Keune, H. Wende, Applied Physics Letters 99 (2011).
date_created: 2019-01-31T10:21:25Z
date_updated: 2022-01-06T07:03:34Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3622662
intvolume: ' 99'
issue: '5'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Room temperature spin relaxation length in spin light-emitting diodes
type: journal_article
user_id: '42514'
volume: 99
year: '2011'
...
---
_id: '7335'
author:
- first_name: Hubert J.
full_name: Krenner, Hubert J.
last_name: Krenner
- first_name: Stefan
full_name: Völk, Stefan
last_name: Völk
- first_name: Florian J. R.
full_name: Schülein, Florian J. R.
last_name: Schülein
- first_name: Florian
full_name: Knall, Florian
last_name: Knall
- first_name: Achim
full_name: Wixforth, Achim
last_name: Wixforth
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Hyochul
full_name: Kim, Hyochul
last_name: Kim
- first_name: Tuan A.
full_name: Truong, Tuan A.
last_name: Truong
- first_name: Pierre M.
full_name: Petroff, Pierre M.
last_name: Petroff
citation:
ama: Krenner HJ, Völk S, Schülein FJR, et al. Surface acoustic wave controlled carrier
injection into self-assembled quantum dots and quantum posts. physica status
solidi (c). 2011;9(2):407-410. doi:10.1002/pssc.201100236
apa: Krenner, H. J., Völk, S., Schülein, F. J. R., Knall, F., Wixforth, A., Reuter,
D., … Petroff, P. M. (2011). Surface acoustic wave controlled carrier injection
into self-assembled quantum dots and quantum posts. Physica Status Solidi (C),
9(2), 407–410. https://doi.org/10.1002/pssc.201100236
bibtex: '@article{Krenner_Völk_Schülein_Knall_Wixforth_Reuter_Wieck_Kim_Truong_Petroff_2011,
title={Surface acoustic wave controlled carrier injection into self-assembled
quantum dots and quantum posts}, volume={9}, DOI={10.1002/pssc.201100236},
number={2}, journal={physica status solidi (c)}, publisher={Wiley}, author={Krenner,
Hubert J. and Völk, Stefan and Schülein, Florian J. R. and Knall, Florian and
Wixforth, Achim and Reuter, Dirk and Wieck, Andreas D. and Kim, Hyochul and Truong,
Tuan A. and Petroff, Pierre M.}, year={2011}, pages={407–410} }'
chicago: 'Krenner, Hubert J., Stefan Völk, Florian J. R. Schülein, Florian Knall,
Achim Wixforth, Dirk Reuter, Andreas D. Wieck, Hyochul Kim, Tuan A. Truong, and
Pierre M. Petroff. “Surface Acoustic Wave Controlled Carrier Injection into Self-Assembled
Quantum Dots and Quantum Posts.” Physica Status Solidi (C) 9, no. 2 (2011):
407–10. https://doi.org/10.1002/pssc.201100236.'
ieee: H. J. Krenner et al., “Surface acoustic wave controlled carrier injection
into self-assembled quantum dots and quantum posts,” physica status solidi
(c), vol. 9, no. 2, pp. 407–410, 2011.
mla: Krenner, Hubert J., et al. “Surface Acoustic Wave Controlled Carrier Injection
into Self-Assembled Quantum Dots and Quantum Posts.” Physica Status Solidi
(C), vol. 9, no. 2, Wiley, 2011, pp. 407–10, doi:10.1002/pssc.201100236.
short: H.J. Krenner, S. Völk, F.J.R. Schülein, F. Knall, A. Wixforth, D. Reuter,
A.D. Wieck, H. Kim, T.A. Truong, P.M. Petroff, Physica Status Solidi (C) 9 (2011)
407–410.
date_created: 2019-01-31T11:18:49Z
date_updated: 2022-01-06T07:03:35Z
department:
- _id: '15'
- _id: '230'
doi: 10.1002/pssc.201100236
intvolume: ' 9'
issue: '2'
language:
- iso: eng
page: 407-410
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: Surface acoustic wave controlled carrier injection into self-assembled quantum
dots and quantum posts
type: journal_article
user_id: '42514'
volume: 9
year: '2011'
...
---
_id: '4140'
abstract:
- lang: eng
text: "In this paper we report on the successful reduction of tensile strain in
a thin strained ion-beam\r\nsynthesized 3C-SiC(1 1 1) layer on silicon. The creation
of a near-interface defect structure consisting\r\nof nanometric voids and stacking
fault type defects by He ion implantation and subsequent annealing\r\nyields significant
relaxation in the top SiC film. The microstructure of the defect layer is studied
by transmission electron microscopy, and the strain state of the 3C-SiC layer
was studied by high-resolution X-ray diffraction in a parallel beam configuration.
Typical process conditions for the growth of GaN films on the SiC layer were emulated
by high temperature treatments in a rapid thermal annealer or a quartz tube furnace.
It is found that prolonged annealing at high temperatures leads to ripening of
the voids and to a weaker reduction of the tensile strain. It is shown that this
problem can be overcome by the co-implantation of oxygen ions to form highly thermally
stable void/extended defect structures."
article_type: original
author:
- first_name: M.
full_name: Häberlen, M.
last_name: Häberlen
- first_name: B.
full_name: Murphy, B.
last_name: Murphy
- first_name: B.
full_name: Stritzker, B.
last_name: Stritzker
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Häberlen M, Murphy B, Stritzker B, Lindner J. Relaxation of a strained 3C-SiC(111)
thin film on silicon by He+ and O+ ion beam defect engineering. Nuclear Instruments
and Methods in Physics Research Section B: Beam Interactions with Materials and
Atoms. 2011;272:322-325. doi:10.1016/j.nimb.2011.01.092'
apa: 'Häberlen, M., Murphy, B., Stritzker, B., & Lindner, J. (2011). Relaxation
of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions
with Materials and Atoms, 272, 322–325. https://doi.org/10.1016/j.nimb.2011.01.092'
bibtex: '@article{Häberlen_Murphy_Stritzker_Lindner_2011, title={Relaxation of a
strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering},
volume={272}, DOI={10.1016/j.nimb.2011.01.092},
journal={Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions
with Materials and Atoms}, publisher={Elsevier BV}, author={Häberlen, M. and Murphy,
B. and Stritzker, B. and Lindner, Jörg}, year={2011}, pages={322–325} }'
chicago: 'Häberlen, M., B. Murphy, B. Stritzker, and Jörg Lindner. “Relaxation of
a Strained 3C-SiC(111) Thin Film on Silicon by He+ and O+ Ion Beam Defect Engineering.”
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions
with Materials and Atoms 272 (2011): 322–25. https://doi.org/10.1016/j.nimb.2011.01.092.'
ieee: 'M. Häberlen, B. Murphy, B. Stritzker, and J. Lindner, “Relaxation of a strained
3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering,” Nuclear
Instruments and Methods in Physics Research Section B: Beam Interactions with
Materials and Atoms, vol. 272, pp. 322–325, 2011.'
mla: 'Häberlen, M., et al. “Relaxation of a Strained 3C-SiC(111) Thin Film on Silicon
by He+ and O+ Ion Beam Defect Engineering.” Nuclear Instruments and Methods
in Physics Research Section B: Beam Interactions with Materials and Atoms,
vol. 272, Elsevier BV, 2011, pp. 322–25, doi:10.1016/j.nimb.2011.01.092.'
short: 'M. Häberlen, B. Murphy, B. Stritzker, J. Lindner, Nuclear Instruments and
Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
272 (2011) 322–325.'
date_created: 2018-08-27T12:27:23Z
date_updated: 2022-01-06T07:00:23Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1016/j.nimb.2011.01.092
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-27T12:29:34Z
date_updated: 2018-08-27T12:29:34Z
file_id: '4141'
file_name: Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and
O+ ion beam defect engineering.pdf
file_size: 772335
relation: main_file
success: 1
file_date_updated: 2018-08-27T12:29:34Z
has_accepted_license: '1'
intvolume: ' 272'
language:
- iso: eng
page: 322-325
publication: 'Nuclear Instruments and Methods in Physics Research Section B: Beam
Interactions with Materials and Atoms'
publication_identifier:
issn:
- 0168-583X
publication_status: published
publisher: Elsevier BV
status: public
title: Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion
beam defect engineering
type: journal_article
user_id: '55706'
volume: 272
year: '2011'
...
---
_id: '4142'
abstract:
- lang: eng
text: This paper reports the successful reduction of tensile strain in a thin ion-beam-synthesized
3C-SiC(111) layer on silicon. Significant relaxation is achieved by creating a
near-interface defect structure containing nanometric voids and dislocation loops
by the implantation of He ions and subsequent thermal annealing. The structural
features of this defect microstructure are investigated by transmission electron
microscopy. High-resolution X-ray diffraction in a parallel beam configuration
is used to quantify the strain state of the top SiC layer. Further annealing experiments
were carried out in order to emulate typical process conditions for the growth
of wide-bandgap semiconductors like, for example GaN. It is found that prolonged
annealing at elevated temperatures leads to coarsening of the voids and to a much
less efficient strain reduction. We show that this issue can be resolved by the
co-implantation of oxygen to form highly thermally stable cavity/extended defect
structures. The technique presented here may be useful for a variety of other
thermally mismatched bulk/thin film couples as well.
article_type: original
author:
- first_name: Maik
full_name: Häberlen, Maik
last_name: Häberlen
- first_name: Brian
full_name: Murphy, Brian
last_name: Murphy
- first_name: Bernd
full_name: Stritzker, Bernd
last_name: Stritzker
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: Häberlen M, Murphy B, Stritzker B, Lindner J. Decoupling of a strained 3C-SiC(111)
thin film on silicon by He+ and O+ ion implantation. physica status solidi
(c). 2011;8(3):944-947. doi:10.1002/pssc.201000342
apa: Häberlen, M., Murphy, B., Stritzker, B., & Lindner, J. (2011). Decoupling
of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation.
Physica Status Solidi (C), 8(3), 944–947. https://doi.org/10.1002/pssc.201000342
bibtex: '@article{Häberlen_Murphy_Stritzker_Lindner_2011, title={Decoupling of a
strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation}, volume={8},
DOI={10.1002/pssc.201000342},
number={3}, journal={physica status solidi (c)}, publisher={Wiley}, author={Häberlen,
Maik and Murphy, Brian and Stritzker, Bernd and Lindner, Jörg}, year={2011}, pages={944–947}
}'
chicago: 'Häberlen, Maik, Brian Murphy, Bernd Stritzker, and Jörg Lindner. “Decoupling
of a Strained 3C-SiC(111) Thin Film on Silicon by He+ and O+ Ion Implantation.”
Physica Status Solidi (C) 8, no. 3 (2011): 944–47. https://doi.org/10.1002/pssc.201000342.'
ieee: M. Häberlen, B. Murphy, B. Stritzker, and J. Lindner, “Decoupling of a strained
3C-SiC(111) thin film on silicon by He+ and O+ ion implantation,” physica status
solidi (c), vol. 8, no. 3, pp. 944–947, 2011.
mla: Häberlen, Maik, et al. “Decoupling of a Strained 3C-SiC(111) Thin Film on Silicon
by He+ and O+ Ion Implantation.” Physica Status Solidi (C), vol. 8, no.
3, Wiley, 2011, pp. 944–47, doi:10.1002/pssc.201000342.
short: M. Häberlen, B. Murphy, B. Stritzker, J. Lindner, Physica Status Solidi (C)
8 (2011) 944–947.
date_created: 2018-08-27T12:31:20Z
date_updated: 2022-01-06T07:00:24Z
ddc:
- '530'
department:
- _id: '286'
doi: 10.1002/pssc.201000342
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-27T12:32:07Z
date_updated: 2018-08-27T12:32:07Z
file_id: '4143'
file_name: Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and
O+ ion implantation.pdf
file_size: 152623
relation: main_file
success: 1
file_date_updated: 2018-08-27T12:32:07Z
has_accepted_license: '1'
intvolume: ' 8'
issue: '3'
language:
- iso: eng
page: 944-947
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion
implantation
type: journal_article
user_id: '55706'
volume: 8
year: '2011'
...
---
_id: '4148'
abstract:
- lang: eng
text: Photoluminescence spectra of Sm^(2+)-doped BaBr^2 have been measured under
hydrostatic pressures up to 17 GPa at room temperature. In the low pressure range
a red-shift of the broad 5d–4f transition of -145 cm^(-1)/GPa is observed. From
5 to 8 GPa a phase mixtureof the initial orthorhombic phase and the high-pressure
monoclinic phase gives rise to two 5d–4f bands, which are strongly overlapping.
Above 8 GPa the crystalis completely transformed to its high-pressure phase where
two different Sm2^(2+) sites exist, but only one broad 5d–4f transition is detected.
It exhibits are d-shift of -36 cm^(-1)/GPa. In addition,the line shifts of the
(_^5)D_0→(_^7)F_J (J=0,1,2) transitions are investigated. Linear shifts of
-19cm^(-1)/GPa for J=0,2 and of -13cm^(-1)/GPa for J01 are observed in the pressure
range from 0 to 5 GPa.
article_type: original
author:
- first_name: Marie Christin
full_name: Wiegand, Marie Christin
last_name: Wiegand
- first_name: Werner
full_name: Sievers, Werner
last_name: Sievers
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: Th.
full_name: Tröster, Th.
last_name: Tröster
- first_name: S.
full_name: Schweizer, S.
last_name: Schweizer
citation:
ama: Wiegand MC, Sievers W, Lindner J, Tröster T, Schweizer S. Photoluminescence
properties of Sm2+-doped BaBr2 under hydrostatic pressure. Journal of Luminescence.
2011;131(11):2400-2403. doi:10.1016/j.jlumin.2011.05.035
apa: Wiegand, M. C., Sievers, W., Lindner, J., Tröster, T., & Schweizer, S.
(2011). Photoluminescence properties of Sm2+-doped BaBr2 under hydrostatic pressure.
Journal of Luminescence, 131(11), 2400–2403. https://doi.org/10.1016/j.jlumin.2011.05.035
bibtex: '@article{Wiegand_Sievers_Lindner_Tröster_Schweizer_2011, title={Photoluminescence
properties of Sm2+-doped BaBr2 under hydrostatic pressure}, volume={131}, DOI={10.1016/j.jlumin.2011.05.035},
number={11}, journal={Journal of Luminescence}, publisher={Elsevier BV}, author={Wiegand,
Marie Christin and Sievers, Werner and Lindner, Jörg and Tröster, Th. and Schweizer,
S.}, year={2011}, pages={2400–2403} }'
chicago: 'Wiegand, Marie Christin, Werner Sievers, Jörg Lindner, Th. Tröster, and
S. Schweizer. “Photoluminescence Properties of Sm2+-Doped BaBr2 under Hydrostatic
Pressure.” Journal of Luminescence 131, no. 11 (2011): 2400–2403. https://doi.org/10.1016/j.jlumin.2011.05.035.'
ieee: M. C. Wiegand, W. Sievers, J. Lindner, T. Tröster, and S. Schweizer, “Photoluminescence
properties of Sm2+-doped BaBr2 under hydrostatic pressure,” Journal of Luminescence,
vol. 131, no. 11, pp. 2400–2403, 2011.
mla: Wiegand, Marie Christin, et al. “Photoluminescence Properties of Sm2+-Doped
BaBr2 under Hydrostatic Pressure.” Journal of Luminescence, vol. 131, no.
11, Elsevier BV, 2011, pp. 2400–03, doi:10.1016/j.jlumin.2011.05.035.
short: M.C. Wiegand, W. Sievers, J. Lindner, T. Tröster, S. Schweizer, Journal of
Luminescence 131 (2011) 2400–2403.
date_created: 2018-08-27T12:44:42Z
date_updated: 2022-01-06T07:00:25Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1016/j.jlumin.2011.05.035
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-27T12:45:30Z
date_updated: 2018-08-27T12:45:30Z
file_id: '4149'
file_name: Photoluminescence properties of Sm(2+)-doped BaBr2 under hydrostatic
pressure.pdf
file_size: 279989
relation: main_file
success: 1
file_date_updated: 2018-08-27T12:45:30Z
has_accepted_license: '1'
intvolume: ' 131'
issue: '11'
language:
- iso: eng
page: 2400-2403
publication: Journal of Luminescence
publication_identifier:
issn:
- 0022-2313
publication_status: published
publisher: Elsevier BV
status: public
title: Photoluminescence properties of Sm2+-doped BaBr2 under hydrostatic pressure
type: journal_article
user_id: '55706'
volume: 131
year: '2011'
...
---
_id: '4150'
abstract:
- lang: eng
text: "Atomistic simulations on the silicon carbide precipitation in bulk silicon
employing both, classical potential and\r\nfirst-principlesmethods are presented.
The calculations aim at a comprehensive,microscopic understanding of the\r\nprecipitation
mechanism in the context of controversial discussions in the literature. For the
quantum-mechanical\r\ntreatment, basic processes assumed in the precipitation
process are calculated in feasible systems of small\r\nsize. The migration mechanism
of a carbon \x02100\x03 interstitial and silicon \x0211 0\x03 self-interstitial
in otherwise\r\ndefect-free silicon are investigated using density functional
theory calculations. The influence of a nearby\r\nvacancy, another carbon interstitial
and a substitutional defect as well as a silicon self-interstitial has been\r\ninvestigated
systematically. Interactions of various combinations of defects have been characterized
including a\r\ncouple of selected migration pathways within these configurations.
Most of the investigated pairs of defects tend\r\nto agglomerate allowing for
a reduction in strain. The formation of structures involving strong carbon–carbon\r\nbonds
turns out to be very unlikely. In contrast, substitutional carbon occurs in all
probability. A long range\r\ncapture radius has been observed for pairs of interstitial
carbon as well as interstitial carbon and vacancies. A\r\nrather small capture
radius is predicted for substitutional carbon and silicon self-interstitials.
Initial assumptions\r\nregarding the precipitation mechanism of silicon carbide
in bulk silicon are established and conformability to\r\nexperimental findings
is discussed. Furthermore, results of the accurate first-principles calculations
on defects\r\nand carbon diffusion in silicon are compared to results of classical
potential simulations revealing significant\r\nlimitations of the latter method.
An approach to work around this problem is proposed. Finally, results of the\r\nclassical
potential molecular dynamics simulations of large systems are examined, which
reinforce previous\r\nassumptions and give further insight into basic processes
involved in the silicon carbide transition."
article_number: '064126'
article_type: original
author:
- first_name: F.
full_name: Zirkelbach, F.
last_name: Zirkelbach
- first_name: B.
full_name: Stritzker, B.
last_name: Stritzker
- first_name: K.
full_name: Nordlund, K.
last_name: Nordlund
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: W. G.
full_name: Schmidt, W. G.
last_name: Schmidt
- first_name: E.
full_name: Rauls, E.
last_name: Rauls
citation:
ama: Zirkelbach F, Stritzker B, Nordlund K, Lindner J, Schmidt WG, Rauls E. Combinedab
initioand classical potential simulation study on silicon carbide precipitation
in silicon. Physical Review B. 2011;84(6). doi:10.1103/physrevb.84.064126
apa: Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J., Schmidt, W. G., &
Rauls, E. (2011). Combinedab initioand classical potential simulation study on
silicon carbide precipitation in silicon. Physical Review B, 84(6).
https://doi.org/10.1103/physrevb.84.064126
bibtex: '@article{Zirkelbach_Stritzker_Nordlund_Lindner_Schmidt_Rauls_2011, title={Combinedab
initioand classical potential simulation study on silicon carbide precipitation
in silicon}, volume={84}, DOI={10.1103/physrevb.84.064126},
number={6064126}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Lindner,
Jörg and Schmidt, W. G. and Rauls, E.}, year={2011} }'
chicago: Zirkelbach, F., B. Stritzker, K. Nordlund, Jörg Lindner, W. G. Schmidt,
and E. Rauls. “Combinedab Initioand Classical Potential Simulation Study on Silicon
Carbide Precipitation in Silicon.” Physical Review B 84, no. 6 (2011).
https://doi.org/10.1103/physrevb.84.064126.
ieee: F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W. G. Schmidt, and E.
Rauls, “Combinedab initioand classical potential simulation study on silicon carbide
precipitation in silicon,” Physical Review B, vol. 84, no. 6, 2011.
mla: Zirkelbach, F., et al. “Combinedab Initioand Classical Potential Simulation
Study on Silicon Carbide Precipitation in Silicon.” Physical Review B,
vol. 84, no. 6, 064126, American Physical Society (APS), 2011, doi:10.1103/physrevb.84.064126.
short: F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W.G. Schmidt, E. Rauls,
Physical Review B 84 (2011).
date_created: 2018-08-27T13:17:45Z
date_updated: 2022-01-06T07:00:26Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1103/physrevb.84.064126
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-27T13:18:53Z
date_updated: 2018-08-27T13:18:53Z
file_id: '4151'
file_name: Combined ab initio and classical potential simulation study on silicon
carbide precipitation in silicon.pdf
file_size: 1541698
relation: main_file
success: 1
file_date_updated: 2018-08-27T13:18:53Z
has_accepted_license: '1'
intvolume: ' 84'
issue: '6'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Combinedab initioand classical potential simulation study on silicon carbide
precipitation in silicon
type: journal_article
user_id: '55706'
volume: 84
year: '2011'
...
---
_id: '4171'
abstract:
- lang: eng
text: The method involves exciting a quantum system with photons in a polarization
state. Two states of the quantum system are excited with linear horizontal and
vertical polarizations that are orthogonal to each other, where the states exhibit
an energetic gap smaller than energetic bandwidth of photons. The states are assigned
based on the polarizations, where the quantum system is arranged in a superposition
state. The quantum system is formed by a quantum bit that is formed as a two-level
system.
- lang: eng
text: Die Erfindung betrifft ein Verfahren zur Übertragung des Polarisationszustandes
von Photonen in ein stationäres System, bei dem mit Photonen eines Polarisationszustandes
ein Quanten-System angeregt wird, das zwei Zustände aufweist, die mit zueinander
orthogonalen Polarisationen anregbar sind und deren energetischer Abstand kleiner
ist als die energetische Bandbreite der Photonen, wobei beide Zustände in Abhängigkeit
von der Polarisation besetzt werden und das Quantensystem einen Superpositionszustand
beider Zustände einnimmt.
application_date: 2010-05-18
application_number: '102010020817'
author:
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
- first_name: D.
full_name: Mantei, D.
last_name: Mantei
- first_name: 'S. Michaelis '
full_name: 'de Vasconcellos, S. Michaelis '
last_name: de Vasconcellos
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
citation:
ama: Förstner J, Mantei D, de Vasconcellos SM, Zrenner A. Method for transmission
of information about polarization state of photons to stationary system. 2011.
apa: Förstner, J., Mantei, D., de Vasconcellos, S. M., & Zrenner, A. (2011).
Method for transmission of information about polarization state of photons to
stationary system.
bibtex: '@article{Förstner_Mantei_de Vasconcellos_Zrenner_2011, title={Method for
transmission of information about polarization state of photons to stationary
system}, author={Förstner, Jens and Mantei, D. and de Vasconcellos, S. Michaelis and
Zrenner, Artur}, year={2011} }'
chicago: Förstner, Jens, D. Mantei, S. Michaelis de Vasconcellos, and Artur Zrenner.
“Method for Transmission of Information about Polarization State of Photons to
Stationary System,” 2011.
ieee: J. Förstner, D. Mantei, S. M. de Vasconcellos, and A. Zrenner, “Method for
transmission of information about polarization state of photons to stationary
system.” 2011.
mla: Förstner, Jens, et al. Method for Transmission of Information about Polarization
State of Photons to Stationary System. 2011.
short: J. Förstner, D. Mantei, S.M. de Vasconcellos, A. Zrenner, (2011).
date_created: 2018-08-28T08:46:40Z
date_updated: 2022-01-06T07:00:28Z
department:
- _id: '15'
- _id: '290'
ipc: G01J 4/00
ipn: DE102010020817A1
keyword:
- tet_topic_qd
main_file_link:
- url: https://patents.google.com/patent/DE102010020817A1/en
publication_date: 2011-11-24
status: public
title: Method for transmission of information about polarization state of photons
to stationary system
type: patent
user_id: '158'
year: '2011'
...
---
_id: '4377'
abstract:
- lang: eng
text: Confocal Raman spectroscopy was performed as an archetype imaging method to
study the ferroelectric domain structure of periodically poled lithium niobate.
More precisely, the linkage out of spatial resolution and spectral information
proved itself as very useful. Here a specific modulation of the Raman lines by
the local variation of polarity and a non-symmetric measuring-signal across the
domain structure were found, which allows for imaging of domain boundaries as
well as oppositely orientated domains. The high potential of this method is demonstrated
by the visualization of the ferroelectric domain structures based on various phonon
modes.
article_type: original
author:
- first_name: Gerhard
full_name: Berth, Gerhard
id: '53'
last_name: Berth
- first_name: Wjatscheslaw
full_name: Hahn, Wjatscheslaw
last_name: Hahn
- first_name: Volker
full_name: Wiedemeier, Volker
last_name: Wiedemeier
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: Simone
full_name: Sanna, Simone
last_name: Sanna
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
last_name: Schmidt
citation:
ama: Berth G, Hahn W, Wiedemeier V, Zrenner A, Sanna S, Schmidt WG. Imaging of the
Ferroelectric Domain Structures by Confocal Raman Spectroscopy. Ferroelectrics.
2011;420(1):44-48. doi:10.1080/00150193.2011.594774
apa: Berth, G., Hahn, W., Wiedemeier, V., Zrenner, A., Sanna, S., & Schmidt,
W. G. (2011). Imaging of the Ferroelectric Domain Structures by Confocal Raman
Spectroscopy. Ferroelectrics, 420(1), 44–48. https://doi.org/10.1080/00150193.2011.594774
bibtex: '@article{Berth_Hahn_Wiedemeier_Zrenner_Sanna_Schmidt_2011, title={Imaging
of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy}, volume={420},
DOI={10.1080/00150193.2011.594774},
number={1}, journal={Ferroelectrics}, publisher={Informa UK Limited}, author={Berth,
Gerhard and Hahn, Wjatscheslaw and Wiedemeier, Volker and Zrenner, Artur and Sanna,
Simone and Schmidt, Wolf Gero}, year={2011}, pages={44–48} }'
chicago: 'Berth, Gerhard, Wjatscheslaw Hahn, Volker Wiedemeier, Artur Zrenner, Simone
Sanna, and Wolf Gero Schmidt. “Imaging of the Ferroelectric Domain Structures
by Confocal Raman Spectroscopy.” Ferroelectrics 420, no. 1 (2011): 44–48.
https://doi.org/10.1080/00150193.2011.594774.'
ieee: G. Berth, W. Hahn, V. Wiedemeier, A. Zrenner, S. Sanna, and W. G. Schmidt,
“Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy,”
Ferroelectrics, vol. 420, no. 1, pp. 44–48, 2011.
mla: Berth, Gerhard, et al. “Imaging of the Ferroelectric Domain Structures by Confocal
Raman Spectroscopy.” Ferroelectrics, vol. 420, no. 1, Informa UK Limited,
2011, pp. 44–48, doi:10.1080/00150193.2011.594774.
short: G. Berth, W. Hahn, V. Wiedemeier, A. Zrenner, S. Sanna, W.G. Schmidt, Ferroelectrics
420 (2011) 44–48.
date_created: 2018-09-11T14:10:35Z
date_updated: 2022-01-06T07:01:00Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1080/00150193.2011.594774
intvolume: ' 420'
issue: '1'
keyword:
- Raman spectroscopy
- ferroelectric domains
- LiNbO3
- confocal imaging
language:
- iso: eng
page: 44-48
publication: Ferroelectrics
publication_identifier:
issn:
- 0015-0193
- 1563-5112
publication_status: published
publisher: Informa UK Limited
status: public
title: Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy
type: journal_article
user_id: '49428'
volume: 420
year: '2011'
...
---
_id: '4378'
abstract:
- lang: eng
text: Using a combined all-ultra-high-vacuum process employing lateral patterning
with focused ion beams and molecular beam epitaxy, site-selective growth of single
(In,Ga)As quantum dots is achieved. We have embedded such a layer of intentionally
positioned quantum dots in the intrinsic region of a p-i-n junction so that the
quantum dots can be driven electrically. In this contribution, we will present
our results on the morphological properties of the ion-beam modified surface on
which the quantum dot nucleation occurs together with a characterization of the
electrical and optoelectronic properties. We will demonstrate that a single, individual
quantum dot can directly be electrically addressed.
article_type: original
author:
- first_name: Minisha
full_name: Mehta, Minisha
last_name: Mehta
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Steffen
full_name: Michaelis de Vasconcellos, Steffen
last_name: Michaelis de Vasconcellos
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier
C. Electrically driven intentionally positioned single quantum dot. physica
status solidi (c). 2011;8(4):1182-1185. doi:10.1002/pssc.201000828
apa: Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner,
A., & Meier, C. (2011). Electrically driven intentionally positioned single
quantum dot. Physica Status Solidi (C), 8(4), 1182–1185. https://doi.org/10.1002/pssc.201000828
bibtex: '@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2011,
title={Electrically driven intentionally positioned single quantum dot}, volume={8},
DOI={10.1002/pssc.201000828},
number={4}, journal={physica status solidi (c)}, publisher={Wiley}, author={Mehta,
Minisha and Reuter, Dirk and Wieck, Andreas D. and Michaelis de Vasconcellos,
Steffen and Zrenner, Artur and Meier, Cedrik}, year={2011}, pages={1182–1185}
}'
chicago: 'Mehta, Minisha, Dirk Reuter, Andreas D. Wieck, Steffen Michaelis de Vasconcellos,
Artur Zrenner, and Cedrik Meier. “Electrically Driven Intentionally Positioned
Single Quantum Dot.” Physica Status Solidi (C) 8, no. 4 (2011): 1182–85.
https://doi.org/10.1002/pssc.201000828.'
ieee: M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
and C. Meier, “Electrically driven intentionally positioned single quantum dot,”
physica status solidi (c), vol. 8, no. 4, pp. 1182–1185, 2011.
mla: Mehta, Minisha, et al. “Electrically Driven Intentionally Positioned Single
Quantum Dot.” Physica Status Solidi (C), vol. 8, no. 4, Wiley, 2011, pp.
1182–85, doi:10.1002/pssc.201000828.
short: M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
C. Meier, Physica Status Solidi (C) 8 (2011) 1182–1185.
date_created: 2018-09-11T14:15:28Z
date_updated: 2022-01-06T07:01:00Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '287'
doi: 10.1002/pssc.201000828
intvolume: ' 8'
issue: '4'
keyword:
- molecular beam epitaxy
- quantum dot
- site control
- electroluminescence
language:
- iso: eng
page: 1182-1185
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: Electrically driven intentionally positioned single quantum dot
type: journal_article
user_id: '20798'
volume: 8
year: '2011'
...
---
_id: '4379'
abstract:
- lang: eng
text: Uniform mesoporous Si double layers are formed on 4 inch p-type < 100> wafers
with an off orientation of 6º towards < 111> by means of electrochemical etching
in ethanoic-based HF electrolytes. These substrates are of interest for the epitaxial
growth of III–V compound semiconductor stacks on their top for the production
of multi-junction solar cells and very thin electronic devices. We demonstrate
transfer of porous layers after an annealing process in hydrogen atmosphere. Electron
Back-Scatter Diffraction analysis confirms that the substrate orientation is conserved
during the etching and annealing steps. Confocal μ-Raman spectroscopy analysis
shows a decrease in the Raman signal intensity after etching and a subsequent
increase after annealing while no shift is observed. By means of Atomic Force
Microscopy, analysis the surface appearance after the etching and annealing steps
can be visualized. The mean surface roughness varies during the process from 0.55
nm for the unprocessed wafers to 0.27 nm after etching and 0.78 nm after annealing.
The decrease of average roughness after etching is caused by an electropolishing
step prior to porous formation. Despite of slight increase of mean surface roughness
after annealing the samples are still appropriate for high quality epitaxial growth
and subsequent lift-off.
article_type: original
author:
- first_name: E.
full_name: Garralaga Rojas, E.
last_name: Garralaga Rojas
- first_name: B.
full_name: Terheiden, B.
last_name: Terheiden
- first_name: H.
full_name: Plagwitz, H.
last_name: Plagwitz
- first_name: J.
full_name: Hensen, J.
last_name: Hensen
- first_name: V.
full_name: Wiedemeier, V.
last_name: Wiedemeier
- first_name: Gerhard
full_name: Berth, Gerhard
id: '53'
last_name: Berth
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: R.
full_name: Brendel, R.
last_name: Brendel
citation:
ama: Garralaga Rojas E, Terheiden B, Plagwitz H, et al. Lift-off of mesoporous layers
by electrochemical etching on Si (100) substrates with miscut of 6° off towards
(111). Thin Solid Films. 2011;520(1):606-609. doi:10.1016/j.tsf.2011.07.063
apa: Garralaga Rojas, E., Terheiden, B., Plagwitz, H., Hensen, J., Wiedemeier, V.,
Berth, G., … Brendel, R. (2011). Lift-off of mesoporous layers by electrochemical
etching on Si (100) substrates with miscut of 6° off towards (111). Thin Solid
Films, 520(1), 606–609. https://doi.org/10.1016/j.tsf.2011.07.063
bibtex: '@article{Garralaga Rojas_Terheiden_Plagwitz_Hensen_Wiedemeier_Berth_Zrenner_Brendel_2011,
title={Lift-off of mesoporous layers by electrochemical etching on Si (100) substrates
with miscut of 6° off towards (111)}, volume={520}, DOI={10.1016/j.tsf.2011.07.063},
number={1}, journal={Thin Solid Films}, publisher={Elsevier BV}, author={Garralaga
Rojas, E. and Terheiden, B. and Plagwitz, H. and Hensen, J. and Wiedemeier, V.
and Berth, Gerhard and Zrenner, Artur and Brendel, R.}, year={2011}, pages={606–609}
}'
chicago: 'Garralaga Rojas, E., B. Terheiden, H. Plagwitz, J. Hensen, V. Wiedemeier,
Gerhard Berth, Artur Zrenner, and R. Brendel. “Lift-off of Mesoporous Layers by
Electrochemical Etching on Si (100) Substrates with Miscut of 6° off towards (111).”
Thin Solid Films 520, no. 1 (2011): 606–9. https://doi.org/10.1016/j.tsf.2011.07.063.'
ieee: E. Garralaga Rojas et al., “Lift-off of mesoporous layers by electrochemical
etching on Si (100) substrates with miscut of 6° off towards (111),” Thin Solid
Films, vol. 520, no. 1, pp. 606–609, 2011.
mla: Garralaga Rojas, E., et al. “Lift-off of Mesoporous Layers by Electrochemical
Etching on Si (100) Substrates with Miscut of 6° off towards (111).” Thin Solid
Films, vol. 520, no. 1, Elsevier BV, 2011, pp. 606–09, doi:10.1016/j.tsf.2011.07.063.
short: E. Garralaga Rojas, B. Terheiden, H. Plagwitz, J. Hensen, V. Wiedemeier,
G. Berth, A. Zrenner, R. Brendel, Thin Solid Films 520 (2011) 606–609.
date_created: 2018-09-11T14:21:12Z
date_updated: 2022-01-06T07:01:00Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1016/j.tsf.2011.07.063
intvolume: ' 520'
issue: '1'
keyword:
- Porous Si
- Layer transfer
- Thin-film
- Photovoltaics
language:
- iso: eng
page: 606-609
publication: Thin Solid Films
publication_identifier:
issn:
- 0040-6090
publication_status: published
publisher: Elsevier BV
status: public
title: Lift-off of mesoporous layers by electrochemical etching on Si (100) substrates
with miscut of 6° off towards (111)
type: journal_article
user_id: '49428'
volume: 520
year: '2011'
...
---
_id: '1723'
author:
- first_name: Tobias
full_name: Utikal, Tobias
last_name: Utikal
- first_name: Thomas
full_name: Zentgraf, Thomas
id: '30525'
last_name: Zentgraf
orcid: 0000-0002-8662-1101
- first_name: Sergei G.
full_name: Tikhodeev, Sergei G.
last_name: Tikhodeev
- first_name: Markus
full_name: Lippitz, Markus
last_name: Lippitz
- first_name: Harald
full_name: Giessen, Harald
last_name: Giessen
citation:
ama: Utikal T, Zentgraf T, Tikhodeev SG, Lippitz M, Giessen H. Tailoring the photonic
band splitting in metallodielectric photonic crystal superlattices. Physical
Review B. 2011;84(7). doi:10.1103/physrevb.84.075101
apa: Utikal, T., Zentgraf, T., Tikhodeev, S. G., Lippitz, M., & Giessen, H.
(2011). Tailoring the photonic band splitting in metallodielectric photonic crystal
superlattices. Physical Review B, 84(7). https://doi.org/10.1103/physrevb.84.075101
bibtex: '@article{Utikal_Zentgraf_Tikhodeev_Lippitz_Giessen_2011, title={Tailoring
the photonic band splitting in metallodielectric photonic crystal superlattices},
volume={84}, DOI={10.1103/physrevb.84.075101},
number={7}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Utikal, Tobias and Zentgraf, Thomas and Tikhodeev, Sergei G. and
Lippitz, Markus and Giessen, Harald}, year={2011} }'
chicago: Utikal, Tobias, Thomas Zentgraf, Sergei G. Tikhodeev, Markus Lippitz, and
Harald Giessen. “Tailoring the Photonic Band Splitting in Metallodielectric Photonic
Crystal Superlattices.” Physical Review B 84, no. 7 (2011). https://doi.org/10.1103/physrevb.84.075101.
ieee: T. Utikal, T. Zentgraf, S. G. Tikhodeev, M. Lippitz, and H. Giessen, “Tailoring
the photonic band splitting in metallodielectric photonic crystal superlattices,”
Physical Review B, vol. 84, no. 7, 2011.
mla: Utikal, Tobias, et al. “Tailoring the Photonic Band Splitting in Metallodielectric
Photonic Crystal Superlattices.” Physical Review B, vol. 84, no. 7, American
Physical Society (APS), 2011, doi:10.1103/physrevb.84.075101.
short: T. Utikal, T. Zentgraf, S.G. Tikhodeev, M. Lippitz, H. Giessen, Physical
Review B 84 (2011).
date_created: 2018-03-23T12:26:16Z
date_updated: 2022-01-06T06:53:06Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevb.84.075101
intvolume: ' 84'
issue: '7'
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Tailoring the photonic band splitting in metallodielectric photonic crystal
superlattices
type: journal_article
user_id: '30525'
volume: 84
year: '2011'
...
---
_id: '1724'
author:
- first_name: Majid
full_name: Gharghi, Majid
last_name: Gharghi
- first_name: Christopher
full_name: Gladden, Christopher
last_name: Gladden
- first_name: Thomas
full_name: Zentgraf, Thomas
id: '30525'
last_name: Zentgraf
orcid: 0000-0002-8662-1101
- first_name: Yongmin
full_name: Liu, Yongmin
last_name: Liu
- first_name: Xiaobo
full_name: Yin, Xiaobo
last_name: Yin
- first_name: Jason
full_name: Valentine, Jason
last_name: Valentine
- first_name: Xiang
full_name: Zhang, Xiang
last_name: Zhang
citation:
ama: Gharghi M, Gladden C, Zentgraf T, et al. A Carpet Cloak for Visible Light.
Nano Letters. 2011;11(7):2825-2828. doi:10.1021/nl201189z
apa: Gharghi, M., Gladden, C., Zentgraf, T., Liu, Y., Yin, X., Valentine, J., &
Zhang, X. (2011). A Carpet Cloak for Visible Light. Nano Letters, 11(7),
2825–2828. https://doi.org/10.1021/nl201189z
bibtex: '@article{Gharghi_Gladden_Zentgraf_Liu_Yin_Valentine_Zhang_2011, title={A
Carpet Cloak for Visible Light}, volume={11}, DOI={10.1021/nl201189z},
number={7}, journal={Nano Letters}, publisher={American Chemical Society (ACS)},
author={Gharghi, Majid and Gladden, Christopher and Zentgraf, Thomas and Liu,
Yongmin and Yin, Xiaobo and Valentine, Jason and Zhang, Xiang}, year={2011}, pages={2825–2828}
}'
chicago: 'Gharghi, Majid, Christopher Gladden, Thomas Zentgraf, Yongmin Liu, Xiaobo
Yin, Jason Valentine, and Xiang Zhang. “A Carpet Cloak for Visible Light.” Nano
Letters 11, no. 7 (2011): 2825–28. https://doi.org/10.1021/nl201189z.'
ieee: M. Gharghi et al., “A Carpet Cloak for Visible Light,” Nano Letters,
vol. 11, no. 7, pp. 2825–2828, 2011.
mla: Gharghi, Majid, et al. “A Carpet Cloak for Visible Light.” Nano Letters,
vol. 11, no. 7, American Chemical Society (ACS), 2011, pp. 2825–28, doi:10.1021/nl201189z.
short: M. Gharghi, C. Gladden, T. Zentgraf, Y. Liu, X. Yin, J. Valentine, X. Zhang,
Nano Letters 11 (2011) 2825–2828.
date_created: 2018-03-23T12:26:47Z
date_updated: 2022-01-06T06:53:07Z
department:
- _id: '15'
- _id: '230'
doi: 10.1021/nl201189z
intvolume: ' 11'
issue: '7'
page: 2825-2828
publication: Nano Letters
publication_identifier:
issn:
- 1530-6984
- 1530-6992
publication_status: published
publisher: American Chemical Society (ACS)
status: public
title: A Carpet Cloak for Visible Light
type: journal_article
user_id: '30525'
volume: 11
year: '2011'
...