---
_id: '7983'
article_number: '062112'
author:
- first_name: M.
full_name: Wiemann, M.
last_name: Wiemann
- first_name: U.
full_name: Wieser, U.
last_name: Wieser
- first_name: U.
full_name: Kunze, U.
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Wiemann M, Wieser U, Kunze U, Reuter D, Wieck AD. Full-wave rectification based
upon hot-electron thermopower. Applied Physics Letters. 2010;97(6). doi:10.1063/1.3475922
apa: Wiemann, M., Wieser, U., Kunze, U., Reuter, D., & Wieck, A. D. (2010).
Full-wave rectification based upon hot-electron thermopower. Applied Physics
Letters, 97(6). https://doi.org/10.1063/1.3475922
bibtex: '@article{Wiemann_Wieser_Kunze_Reuter_Wieck_2010, title={Full-wave rectification
based upon hot-electron thermopower}, volume={97}, DOI={10.1063/1.3475922},
number={6062112}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Wiemann, M. and Wieser, U. and Kunze, U. and Reuter, Dirk and Wieck, A.
D.}, year={2010} }'
chicago: Wiemann, M., U. Wieser, U. Kunze, Dirk Reuter, and A. D. Wieck. “Full-Wave
Rectification Based upon Hot-Electron Thermopower.” Applied Physics Letters
97, no. 6 (2010). https://doi.org/10.1063/1.3475922.
ieee: M. Wiemann, U. Wieser, U. Kunze, D. Reuter, and A. D. Wieck, “Full-wave rectification
based upon hot-electron thermopower,” Applied Physics Letters, vol. 97,
no. 6, 2010.
mla: Wiemann, M., et al. “Full-Wave Rectification Based upon Hot-Electron Thermopower.”
Applied Physics Letters, vol. 97, no. 6, 062112, AIP Publishing, 2010,
doi:10.1063/1.3475922.
short: M. Wiemann, U. Wieser, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters
97 (2010).
date_created: 2019-02-21T14:34:50Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3475922
intvolume: ' 97'
issue: '6'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Full-wave rectification based upon hot-electron thermopower
type: journal_article
user_id: '42514'
volume: 97
year: '2010'
...
---
_id: '7984'
author:
- first_name: Stefan
full_name: Völk, Stefan
last_name: Völk
- first_name: Florian J. R.
full_name: Schülein, Florian J. R.
last_name: Schülein
- first_name: Florian
full_name: Knall, Florian
last_name: Knall
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Tuan A.
full_name: Truong, Tuan A.
last_name: Truong
- first_name: Hyochul
full_name: Kim, Hyochul
last_name: Kim
- first_name: Pierre M.
full_name: Petroff, Pierre M.
last_name: Petroff
- first_name: Achim
full_name: Wixforth, Achim
last_name: Wixforth
- first_name: Hubert J.
full_name: Krenner, Hubert J.
last_name: Krenner
citation:
ama: Völk S, Schülein FJR, Knall F, et al. Enhanced Sequential Carrier Capture
into Individual Quantum Dots and Quantum Posts Controlled by Surface Acoustic
Waves. Nano Letters. 2010;10(9):3399-3407. doi:10.1021/nl1013053
apa: Völk, S., Schülein, F. J. R., Knall, F., Reuter, D., Wieck, A. D., Truong,
T. A., … Krenner, H. J. (2010). Enhanced Sequential Carrier Capture into Individual
Quantum Dots and Quantum Posts Controlled by Surface Acoustic Waves. Nano Letters,
10(9), 3399–3407. https://doi.org/10.1021/nl1013053
bibtex: '@article{Völk_Schülein_Knall_Reuter_Wieck_Truong_Kim_Petroff_Wixforth_Krenner_2010,
title={Enhanced Sequential Carrier Capture into Individual Quantum Dots and Quantum
Posts Controlled by Surface Acoustic Waves}, volume={10}, DOI={10.1021/nl1013053},
number={9}, journal={Nano Letters}, publisher={American Chemical Society (ACS)},
author={Völk, Stefan and Schülein, Florian J. R. and Knall, Florian and Reuter,
Dirk and Wieck, Andreas D. and Truong, Tuan A. and Kim, Hyochul and Petroff, Pierre
M. and Wixforth, Achim and Krenner, Hubert J.}, year={2010}, pages={3399–3407}
}'
chicago: 'Völk, Stefan, Florian J. R. Schülein, Florian Knall, Dirk Reuter, Andreas
D. Wieck, Tuan A. Truong, Hyochul Kim, Pierre M. Petroff, Achim Wixforth, and
Hubert J. Krenner. “Enhanced Sequential Carrier Capture into Individual Quantum
Dots and Quantum Posts Controlled by Surface Acoustic Waves.” Nano Letters
10, no. 9 (2010): 3399–3407. https://doi.org/10.1021/nl1013053.'
ieee: S. Völk et al., “Enhanced Sequential Carrier Capture into Individual
Quantum Dots and Quantum Posts Controlled by Surface Acoustic Waves,” Nano
Letters, vol. 10, no. 9, pp. 3399–3407, 2010.
mla: Völk, Stefan, et al. “Enhanced Sequential Carrier Capture into Individual
Quantum Dots and Quantum Posts Controlled by Surface Acoustic Waves.” Nano
Letters, vol. 10, no. 9, American Chemical Society (ACS), 2010, pp. 3399–407,
doi:10.1021/nl1013053.
short: S. Völk, F.J.R. Schülein, F. Knall, D. Reuter, A.D. Wieck, T.A. Truong,
H. Kim, P.M. Petroff, A. Wixforth, H.J. Krenner, Nano Letters 10 (2010) 3399–3407.
date_created: 2019-02-21T14:35:50Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1021/nl1013053
intvolume: ' 10'
issue: '9'
language:
- iso: eng
page: 3399-3407
publication: Nano Letters
publication_identifier:
issn:
- 1530-6984
- 1530-6992
publication_status: published
publisher: American Chemical Society (ACS)
status: public
title: Enhanced Sequential Carrier Capture into Individual Quantum Dots and Quantum
Posts Controlled by Surface Acoustic Waves
type: journal_article
user_id: '42514'
volume: 10
year: '2010'
...
---
_id: '7985'
article_number: '063902'
author:
- first_name: E.
full_name: Schuster, E.
last_name: Schuster
- first_name: R. A.
full_name: Brand, R. A.
last_name: Brand
- first_name: F.
full_name: Stromberg, F.
last_name: Stromberg
- first_name: A.
full_name: Ludwig, A.
last_name: Ludwig
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: S.
full_name: Hövel, S.
last_name: Hövel
- first_name: N. C.
full_name: Gerhardt, N. C.
last_name: Gerhardt
- first_name: M. R.
full_name: Hofmann, M. R.
last_name: Hofmann
- first_name: H.
full_name: Wende, H.
last_name: Wende
- first_name: W.
full_name: Keune, W.
last_name: Keune
citation:
ama: 'Schuster E, Brand RA, Stromberg F, et al. Epitaxial growth and interfacial
magnetism of spin aligner for remanent spin injection: [Fe/Tb]n/Fe/MgO/GaAs-light
emitting diode as a prototype system. Journal of Applied Physics. 2010;108(6).
doi:10.1063/1.3476265'
apa: 'Schuster, E., Brand, R. A., Stromberg, F., Ludwig, A., Reuter, D., Wieck,
A. D., … Keune, W. (2010). Epitaxial growth and interfacial magnetism of spin
aligner for remanent spin injection: [Fe/Tb]n/Fe/MgO/GaAs-light emitting diode
as a prototype system. Journal of Applied Physics, 108(6). https://doi.org/10.1063/1.3476265'
bibtex: '@article{Schuster_Brand_Stromberg_Ludwig_Reuter_Wieck_Hövel_Gerhardt_Hofmann_Wende_et
al._2010, title={Epitaxial growth and interfacial magnetism of spin aligner for
remanent spin injection: [Fe/Tb]n/Fe/MgO/GaAs-light emitting diode as a prototype
system}, volume={108}, DOI={10.1063/1.3476265},
number={6063902}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Schuster, E. and Brand, R. A. and Stromberg, F. and Ludwig, A. and Reuter,
Dirk and Wieck, A. D. and Hövel, S. and Gerhardt, N. C. and Hofmann, M. R. and
Wende, H. and et al.}, year={2010} }'
chicago: 'Schuster, E., R. A. Brand, F. Stromberg, A. Ludwig, Dirk Reuter, A. D.
Wieck, S. Hövel, et al. “Epitaxial Growth and Interfacial Magnetism of Spin Aligner
for Remanent Spin Injection: [Fe/Tb]n/Fe/MgO/GaAs-Light Emitting Diode as a Prototype
System.” Journal of Applied Physics 108, no. 6 (2010). https://doi.org/10.1063/1.3476265.'
ieee: 'E. Schuster et al., “Epitaxial growth and interfacial magnetism of
spin aligner for remanent spin injection: [Fe/Tb]n/Fe/MgO/GaAs-light emitting
diode as a prototype system,” Journal of Applied Physics, vol. 108, no.
6, 2010.'
mla: 'Schuster, E., et al. “Epitaxial Growth and Interfacial Magnetism of Spin Aligner
for Remanent Spin Injection: [Fe/Tb]n/Fe/MgO/GaAs-Light Emitting Diode as a Prototype
System.” Journal of Applied Physics, vol. 108, no. 6, 063902, AIP Publishing,
2010, doi:10.1063/1.3476265.'
short: E. Schuster, R.A. Brand, F. Stromberg, A. Ludwig, D. Reuter, A.D. Wieck,
S. Hövel, N.C. Gerhardt, M.R. Hofmann, H. Wende, W. Keune, Journal of Applied
Physics 108 (2010).
date_created: 2019-02-21T14:37:35Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3476265
intvolume: ' 108'
issue: '6'
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: 'Epitaxial growth and interfacial magnetism of spin aligner for remanent spin
injection: [Fe/Tb]n/Fe/MgO/GaAs-light emitting diode as a prototype system'
type: journal_article
user_id: '42514'
volume: 108
year: '2010'
...
---
_id: '7986'
article_number: '67010'
author:
- first_name: Y.
full_name: Komijani, Y.
last_name: Komijani
- first_name: M.
full_name: Csontos, M.
last_name: Csontos
- first_name: I.
full_name: Shorubalko, I.
last_name: Shorubalko
- first_name: T.
full_name: Ihn, T.
last_name: Ihn
- first_name: K.
full_name: Ensslin, K.
last_name: Ensslin
- first_name: Y.
full_name: Meir, Y.
last_name: Meir
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Komijani Y, Csontos M, Shorubalko I, et al. Evidence for localization and 0.7
anomaly in hole quantum point contacts. EPL (Europhysics Letters). 2010;91(6).
doi:10.1209/0295-5075/91/67010
apa: Komijani, Y., Csontos, M., Shorubalko, I., Ihn, T., Ensslin, K., Meir, Y.,
… Wieck, A. D. (2010). Evidence for localization and 0.7 anomaly in hole quantum
point contacts. EPL (Europhysics Letters), 91(6). https://doi.org/10.1209/0295-5075/91/67010
bibtex: '@article{Komijani_Csontos_Shorubalko_Ihn_Ensslin_Meir_Reuter_Wieck_2010,
title={Evidence for localization and 0.7 anomaly in hole quantum point contacts},
volume={91}, DOI={10.1209/0295-5075/91/67010},
number={667010}, journal={EPL (Europhysics Letters)}, publisher={IOP Publishing},
author={Komijani, Y. and Csontos, M. and Shorubalko, I. and Ihn, T. and Ensslin,
K. and Meir, Y. and Reuter, Dirk and Wieck, A. D.}, year={2010} }'
chicago: Komijani, Y., M. Csontos, I. Shorubalko, T. Ihn, K. Ensslin, Y. Meir, Dirk
Reuter, and A. D. Wieck. “Evidence for Localization and 0.7 Anomaly in Hole Quantum
Point Contacts.” EPL (Europhysics Letters) 91, no. 6 (2010). https://doi.org/10.1209/0295-5075/91/67010.
ieee: Y. Komijani et al., “Evidence for localization and 0.7 anomaly in hole
quantum point contacts,” EPL (Europhysics Letters), vol. 91, no. 6, 2010.
mla: Komijani, Y., et al. “Evidence for Localization and 0.7 Anomaly in Hole Quantum
Point Contacts.” EPL (Europhysics Letters), vol. 91, no. 6, 67010, IOP
Publishing, 2010, doi:10.1209/0295-5075/91/67010.
short: Y. Komijani, M. Csontos, I. Shorubalko, T. Ihn, K. Ensslin, Y. Meir, D. Reuter,
A.D. Wieck, EPL (Europhysics Letters) 91 (2010).
date_created: 2019-02-21T14:38:22Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1209/0295-5075/91/67010
intvolume: ' 91'
issue: '6'
language:
- iso: eng
publication: EPL (Europhysics Letters)
publication_identifier:
issn:
- 0295-5075
- 1286-4854
publication_status: published
publisher: IOP Publishing
status: public
title: Evidence for localization and 0.7 anomaly in hole quantum point contacts
type: journal_article
user_id: '42514'
volume: 91
year: '2010'
...
---
_id: '7987'
author:
- first_name: Bastian
full_name: Marquardt, Bastian
last_name: Marquardt
- first_name: Martin
full_name: Geller, Martin
last_name: Geller
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
citation:
ama: 'Marquardt B, Geller M, Lorke A, Reuter D, Wieck AD. A two-dimensional electron
gas as a sensitive detector to observe the charge carrier dynamics of self-assembled
QDs. Physica E: Low-dimensional Systems and Nanostructures. 2010;42(10):2598-2601.
doi:10.1016/j.physe.2010.02.010'
apa: 'Marquardt, B., Geller, M., Lorke, A., Reuter, D., & Wieck, A. D. (2010).
A two-dimensional electron gas as a sensitive detector to observe the charge carrier
dynamics of self-assembled QDs. Physica E: Low-Dimensional Systems and Nanostructures,
42(10), 2598–2601. https://doi.org/10.1016/j.physe.2010.02.010'
bibtex: '@article{Marquardt_Geller_Lorke_Reuter_Wieck_2010, title={A two-dimensional
electron gas as a sensitive detector to observe the charge carrier dynamics of
self-assembled QDs}, volume={42}, DOI={10.1016/j.physe.2010.02.010},
number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures},
publisher={Elsevier BV}, author={Marquardt, Bastian and Geller, Martin and Lorke,
Axel and Reuter, Dirk and Wieck, Andreas D.}, year={2010}, pages={2598–2601} }'
chicago: 'Marquardt, Bastian, Martin Geller, Axel Lorke, Dirk Reuter, and Andreas
D. Wieck. “A Two-Dimensional Electron Gas as a Sensitive Detector to Observe the
Charge Carrier Dynamics of Self-Assembled QDs.” Physica E: Low-Dimensional
Systems and Nanostructures 42, no. 10 (2010): 2598–2601. https://doi.org/10.1016/j.physe.2010.02.010.'
ieee: 'B. Marquardt, M. Geller, A. Lorke, D. Reuter, and A. D. Wieck, “A two-dimensional
electron gas as a sensitive detector to observe the charge carrier dynamics of
self-assembled QDs,” Physica E: Low-dimensional Systems and Nanostructures,
vol. 42, no. 10, pp. 2598–2601, 2010.'
mla: 'Marquardt, Bastian, et al. “A Two-Dimensional Electron Gas as a Sensitive
Detector to Observe the Charge Carrier Dynamics of Self-Assembled QDs.” Physica
E: Low-Dimensional Systems and Nanostructures, vol. 42, no. 10, Elsevier BV,
2010, pp. 2598–601, doi:10.1016/j.physe.2010.02.010.'
short: 'B. Marquardt, M. Geller, A. Lorke, D. Reuter, A.D. Wieck, Physica E: Low-Dimensional
Systems and Nanostructures 42 (2010) 2598–2601.'
date_created: 2019-02-21T14:39:07Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/j.physe.2010.02.010
intvolume: ' 42'
issue: '10'
language:
- iso: eng
page: 2598-2601
publication: 'Physica E: Low-dimensional Systems and Nanostructures'
publication_identifier:
issn:
- 1386-9477
publication_status: published
publisher: Elsevier BV
status: public
title: A two-dimensional electron gas as a sensitive detector to observe the charge
carrier dynamics of self-assembled QDs
type: journal_article
user_id: '42514'
volume: 42
year: '2010'
...
---
_id: '7988'
author:
- first_name: Wen
full_name: Lei, Wen
last_name: Lei
- first_name: Christian
full_name: Notthoff, Christian
last_name: Notthoff
- first_name: Jie
full_name: Peng, Jie
last_name: Peng
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas
full_name: Wieck, Andreas
last_name: Wieck
- first_name: Gabriel
full_name: Bester, Gabriel
last_name: Bester
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
citation:
ama: 'Lei W, Notthoff C, Peng J, et al. “Artificial Atoms” in Magnetic Fields: Wave-Function
Shaping and Phase-Sensitive Tunneling. Physical Review Letters. 2010;105(17).
doi:10.1103/physrevlett.105.176804'
apa: 'Lei, W., Notthoff, C., Peng, J., Reuter, D., Wieck, A., Bester, G., &
Lorke, A. (2010). “Artificial Atoms” in Magnetic Fields: Wave-Function Shaping
and Phase-Sensitive Tunneling. Physical Review Letters, 105(17).
https://doi.org/10.1103/physrevlett.105.176804'
bibtex: '@article{Lei_Notthoff_Peng_Reuter_Wieck_Bester_Lorke_2010, title={“Artificial
Atoms” in Magnetic Fields: Wave-Function Shaping and Phase-Sensitive Tunneling},
volume={105}, DOI={10.1103/physrevlett.105.176804},
number={17}, journal={Physical Review Letters}, publisher={American Physical Society
(APS)}, author={Lei, Wen and Notthoff, Christian and Peng, Jie and Reuter, Dirk
and Wieck, Andreas and Bester, Gabriel and Lorke, Axel}, year={2010} }'
chicago: 'Lei, Wen, Christian Notthoff, Jie Peng, Dirk Reuter, Andreas Wieck, Gabriel
Bester, and Axel Lorke. “‘Artificial Atoms’ in Magnetic Fields: Wave-Function
Shaping and Phase-Sensitive Tunneling.” Physical Review Letters 105, no.
17 (2010). https://doi.org/10.1103/physrevlett.105.176804.'
ieee: 'W. Lei et al., “‘Artificial Atoms’ in Magnetic Fields: Wave-Function
Shaping and Phase-Sensitive Tunneling,” Physical Review Letters, vol. 105,
no. 17, 2010.'
mla: 'Lei, Wen, et al. “‘Artificial Atoms’ in Magnetic Fields: Wave-Function Shaping
and Phase-Sensitive Tunneling.” Physical Review Letters, vol. 105, no.
17, American Physical Society (APS), 2010, doi:10.1103/physrevlett.105.176804.'
short: W. Lei, C. Notthoff, J. Peng, D. Reuter, A. Wieck, G. Bester, A. Lorke, Physical
Review Letters 105 (2010).
date_created: 2019-02-21T14:39:56Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevlett.105.176804
intvolume: ' 105'
issue: '17'
language:
- iso: eng
publication: Physical Review Letters
publication_identifier:
issn:
- 0031-9007
- 1079-7114
publication_status: published
publisher: American Physical Society (APS)
status: public
title: '“Artificial Atoms” in Magnetic Fields: Wave-Function Shaping and Phase-Sensitive
Tunneling'
type: journal_article
user_id: '42514'
volume: 105
year: '2010'
...
---
_id: '7989'
author:
- first_name: Christoph
full_name: Kreisbeck, Christoph
last_name: Kreisbeck
- first_name: Tobias
full_name: Kramer, Tobias
last_name: Kramer
- first_name: Sven S.
full_name: Buchholz, Sven S.
last_name: Buchholz
- first_name: Saskia F.
full_name: Fischer, Saskia F.
last_name: Fischer
- first_name: Ulrich
full_name: Kunze, Ulrich
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
citation:
ama: Kreisbeck C, Kramer T, Buchholz SS, et al. Phase shifts and phaseπjumps in
four-terminal waveguide Aharonov-Bohm interferometers. Physical Review B.
2010;82(16). doi:10.1103/physrevb.82.165329
apa: Kreisbeck, C., Kramer, T., Buchholz, S. S., Fischer, S. F., Kunze, U., Reuter,
D., & Wieck, A. D. (2010). Phase shifts and phaseπjumps in four-terminal waveguide
Aharonov-Bohm interferometers. Physical Review B, 82(16). https://doi.org/10.1103/physrevb.82.165329
bibtex: '@article{Kreisbeck_Kramer_Buchholz_Fischer_Kunze_Reuter_Wieck_2010, title={Phase
shifts and phaseπjumps in four-terminal waveguide Aharonov-Bohm interferometers},
volume={82}, DOI={10.1103/physrevb.82.165329},
number={16}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Kreisbeck, Christoph and Kramer, Tobias and Buchholz, Sven S.
and Fischer, Saskia F. and Kunze, Ulrich and Reuter, Dirk and Wieck, Andreas D.},
year={2010} }'
chicago: Kreisbeck, Christoph, Tobias Kramer, Sven S. Buchholz, Saskia F. Fischer,
Ulrich Kunze, Dirk Reuter, and Andreas D. Wieck. “Phase Shifts and Phaseπjumps
in Four-Terminal Waveguide Aharonov-Bohm Interferometers.” Physical Review
B 82, no. 16 (2010). https://doi.org/10.1103/physrevb.82.165329.
ieee: C. Kreisbeck et al., “Phase shifts and phaseπjumps in four-terminal
waveguide Aharonov-Bohm interferometers,” Physical Review B, vol. 82, no.
16, 2010.
mla: Kreisbeck, Christoph, et al. “Phase Shifts and Phaseπjumps in Four-Terminal
Waveguide Aharonov-Bohm Interferometers.” Physical Review B, vol. 82, no.
16, American Physical Society (APS), 2010, doi:10.1103/physrevb.82.165329.
short: C. Kreisbeck, T. Kramer, S.S. Buchholz, S.F. Fischer, U. Kunze, D. Reuter,
A.D. Wieck, Physical Review B 82 (2010).
date_created: 2019-02-21T14:40:35Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevb.82.165329
intvolume: ' 82'
issue: '16'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Phase shifts and phaseπjumps in four-terminal waveguide Aharonov-Bohm interferometers
type: journal_article
user_id: '42514'
volume: 82
year: '2010'
...
---
_id: '7990'
article_number: '143101'
author:
- first_name: M.
full_name: Mehta, M.
last_name: Mehta
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: S.
full_name: Michaelis de Vasconcellos, S.
last_name: Michaelis de Vasconcellos
- first_name: A.
full_name: Zrenner, A.
last_name: Zrenner
- first_name: C.
full_name: Meier, C.
last_name: Meier
citation:
ama: Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier
C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting
diode. Applied Physics Letters. 2010;97(14). doi:10.1063/1.3488812
apa: Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner,
A., & Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot
in a micron sized light emitting diode. Applied Physics Letters, 97(14).
https://doi.org/10.1063/1.3488812
bibtex: '@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010,
title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light
emitting diode}, volume={97}, DOI={10.1063/1.3488812},
number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos,
S. and Zrenner, A. and Meier, C.}, year={2010} }'
chicago: Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
and C. Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized
Light Emitting Diode.” Applied Physics Letters 97, no. 14 (2010). https://doi.org/10.1063/1.3488812.
ieee: M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized
light emitting diode,” Applied Physics Letters, vol. 97, no. 14, 2010.
mla: Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron
Sized Light Emitting Diode.” Applied Physics Letters, vol. 97, no. 14,
143101, AIP Publishing, 2010, doi:10.1063/1.3488812.
short: M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
C. Meier, Applied Physics Letters 97 (2010).
date_created: 2019-02-21T14:41:19Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3488812
intvolume: ' 97'
issue: '14'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting
diode
type: journal_article
user_id: '42514'
volume: 97
year: '2010'
...
---
_id: '7991'
article_number: '012043'
author:
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: R
full_name: Roescu, R
last_name: Roescu
- first_name: U
full_name: Zeitler, U
last_name: Zeitler
- first_name: J C
full_name: Maan, J C
last_name: Maan
- first_name: A D
full_name: Wieck, A D
last_name: Wieck
citation:
ama: 'Reuter D, Roescu R, Zeitler U, Maan JC, Wieck AD. Capacitance-voltage spectroscopy
on InAs quantum dot valence band states in tilted magnetic fields. Journal
of Physics: Conference Series. 2010;245. doi:10.1088/1742-6596/245/1/012043'
apa: 'Reuter, D., Roescu, R., Zeitler, U., Maan, J. C., & Wieck, A. D. (2010).
Capacitance-voltage spectroscopy on InAs quantum dot valence band states in tilted
magnetic fields. Journal of Physics: Conference Series, 245. https://doi.org/10.1088/1742-6596/245/1/012043'
bibtex: '@article{Reuter_Roescu_Zeitler_Maan_Wieck_2010, title={Capacitance-voltage
spectroscopy on InAs quantum dot valence band states in tilted magnetic fields},
volume={245}, DOI={10.1088/1742-6596/245/1/012043},
number={012043}, journal={Journal of Physics: Conference Series}, publisher={IOP
Publishing}, author={Reuter, Dirk and Roescu, R and Zeitler, U and Maan, J C and
Wieck, A D}, year={2010} }'
chicago: 'Reuter, Dirk, R Roescu, U Zeitler, J C Maan, and A D Wieck. “Capacitance-Voltage
Spectroscopy on InAs Quantum Dot Valence Band States in Tilted Magnetic Fields.”
Journal of Physics: Conference Series 245 (2010). https://doi.org/10.1088/1742-6596/245/1/012043.'
ieee: 'D. Reuter, R. Roescu, U. Zeitler, J. C. Maan, and A. D. Wieck, “Capacitance-voltage
spectroscopy on InAs quantum dot valence band states in tilted magnetic fields,”
Journal of Physics: Conference Series, vol. 245, 2010.'
mla: 'Reuter, Dirk, et al. “Capacitance-Voltage Spectroscopy on InAs Quantum Dot
Valence Band States in Tilted Magnetic Fields.” Journal of Physics: Conference
Series, vol. 245, 012043, IOP Publishing, 2010, doi:10.1088/1742-6596/245/1/012043.'
short: 'D. Reuter, R. Roescu, U. Zeitler, J.C. Maan, A.D. Wieck, Journal of Physics:
Conference Series 245 (2010).'
date_created: 2019-02-21T14:42:01Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/1742-6596/245/1/012043
intvolume: ' 245'
language:
- iso: eng
publication: 'Journal of Physics: Conference Series'
publication_identifier:
issn:
- 1742-6596
publication_status: published
publisher: IOP Publishing
status: public
title: Capacitance-voltage spectroscopy on InAs quantum dot valence band states in
tilted magnetic fields
type: journal_article
user_id: '42514'
volume: 245
year: '2010'
...
---
_id: '7992'
article_number: '113040'
author:
- first_name: P J
full_name: Rizo, P J
last_name: Rizo
- first_name: A
full_name: Pugzlys, A
last_name: Pugzlys
- first_name: A
full_name: Slachter, A
last_name: Slachter
- first_name: S Z
full_name: Denega, S Z
last_name: Denega
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A D
full_name: Wieck, A D
last_name: Wieck
- first_name: P H M
full_name: van Loosdrecht, P H M
last_name: van Loosdrecht
- first_name: C H
full_name: van der Wal, C H
last_name: van der Wal
citation:
ama: Rizo PJ, Pugzlys A, Slachter A, et al. Optical probing of spin dynamics of
two-dimensional and bulk electrons in a GaAs/AlGaAs heterojunction system. New
Journal of Physics. 2010;12(11). doi:10.1088/1367-2630/12/11/113040
apa: Rizo, P. J., Pugzlys, A., Slachter, A., Denega, S. Z., Reuter, D., Wieck, A.
D., … van der Wal, C. H. (2010). Optical probing of spin dynamics of two-dimensional
and bulk electrons in a GaAs/AlGaAs heterojunction system. New Journal of Physics,
12(11). https://doi.org/10.1088/1367-2630/12/11/113040
bibtex: '@article{Rizo_Pugzlys_Slachter_Denega_Reuter_Wieck_van Loosdrecht_van der
Wal_2010, title={Optical probing of spin dynamics of two-dimensional and bulk
electrons in a GaAs/AlGaAs heterojunction system}, volume={12}, DOI={10.1088/1367-2630/12/11/113040},
number={11113040}, journal={New Journal of Physics}, publisher={IOP Publishing},
author={Rizo, P J and Pugzlys, A and Slachter, A and Denega, S Z and Reuter, Dirk
and Wieck, A D and van Loosdrecht, P H M and van der Wal, C H}, year={2010} }'
chicago: Rizo, P J, A Pugzlys, A Slachter, S Z Denega, Dirk Reuter, A D Wieck, P
H M van Loosdrecht, and C H van der Wal. “Optical Probing of Spin Dynamics of
Two-Dimensional and Bulk Electrons in a GaAs/AlGaAs Heterojunction System.” New
Journal of Physics 12, no. 11 (2010). https://doi.org/10.1088/1367-2630/12/11/113040.
ieee: P. J. Rizo et al., “Optical probing of spin dynamics of two-dimensional
and bulk electrons in a GaAs/AlGaAs heterojunction system,” New Journal of
Physics, vol. 12, no. 11, 2010.
mla: Rizo, P. J., et al. “Optical Probing of Spin Dynamics of Two-Dimensional and
Bulk Electrons in a GaAs/AlGaAs Heterojunction System.” New Journal of Physics,
vol. 12, no. 11, 113040, IOP Publishing, 2010, doi:10.1088/1367-2630/12/11/113040.
short: P.J. Rizo, A. Pugzlys, A. Slachter, S.Z. Denega, D. Reuter, A.D. Wieck, P.H.M.
van Loosdrecht, C.H. van der Wal, New Journal of Physics 12 (2010).
date_created: 2019-02-21T14:42:45Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/1367-2630/12/11/113040
intvolume: ' 12'
issue: '11'
language:
- iso: eng
publication: New Journal of Physics
publication_identifier:
issn:
- 1367-2630
publication_status: published
publisher: IOP Publishing
status: public
title: Optical probing of spin dynamics of two-dimensional and bulk electrons in a
GaAs/AlGaAs heterojunction system
type: journal_article
user_id: '42514'
volume: 12
year: '2010'
...
---
_id: '4548'
abstract:
- lang: eng
text: "A fluorescence study of acetonitrile solutions of bis(tetramethylguanidine)propane,
copper(I)-iodide and [Cu(btmgp)I] was performed and the chemical reaction of the
latter species with O2 was investigated at room temperature. The actual quenching
process via O2 gassing was studied and an exponential dependence of the fluorescence
intensity with respect to the complex concentration was observed.\r\nFurthermore
the survey was deepened on time resolved fluorescence properties of solved [Cu(btmgp)I]
in a wider concentration range. The applicability of this complex for O2 sensing
inside a microreactor system was proven by confocal fluorescence measurements.
It was shown that the investigated system can be used for oxygen sensing in the
copper concentration range from 10−2 to 10−9 mol/l."
article_type: original
author:
- first_name: Sonja
full_name: Herres-Pawlis, Sonja
last_name: Herres-Pawlis
- first_name: Gerhard
full_name: Berth, Gerhard
id: '53'
last_name: Berth
- first_name: Volker
full_name: Wiedemeier, Volker
last_name: Wiedemeier
- first_name: Ludger
full_name: Schmidt, Ludger
last_name: Schmidt
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: Hans-Joachim
full_name: Warnecke, Hans-Joachim
last_name: Warnecke
citation:
ama: Herres-Pawlis S, Berth G, Wiedemeier V, Schmidt L, Zrenner A, Warnecke H-J.
Oxygen sensing by fluorescence quenching of [Cu(btmgp)I]. Journal of Luminescence.
2010;130(10):1958-1962. doi:10.1016/j.jlumin.2010.05.012
apa: Herres-Pawlis, S., Berth, G., Wiedemeier, V., Schmidt, L., Zrenner, A., &
Warnecke, H.-J. (2010). Oxygen sensing by fluorescence quenching of [Cu(btmgp)I].
Journal of Luminescence, 130(10), 1958–1962. https://doi.org/10.1016/j.jlumin.2010.05.012
bibtex: '@article{Herres-Pawlis_Berth_Wiedemeier_Schmidt_Zrenner_Warnecke_2010,
title={Oxygen sensing by fluorescence quenching of [Cu(btmgp)I]}, volume={130},
DOI={10.1016/j.jlumin.2010.05.012},
number={10}, journal={Journal of Luminescence}, publisher={Elsevier BV}, author={Herres-Pawlis,
Sonja and Berth, Gerhard and Wiedemeier, Volker and Schmidt, Ludger and Zrenner,
Artur and Warnecke, Hans-Joachim}, year={2010}, pages={1958–1962} }'
chicago: 'Herres-Pawlis, Sonja, Gerhard Berth, Volker Wiedemeier, Ludger Schmidt,
Artur Zrenner, and Hans-Joachim Warnecke. “Oxygen Sensing by Fluorescence Quenching
of [Cu(Btmgp)I].” Journal of Luminescence 130, no. 10 (2010): 1958–62.
https://doi.org/10.1016/j.jlumin.2010.05.012.'
ieee: S. Herres-Pawlis, G. Berth, V. Wiedemeier, L. Schmidt, A. Zrenner, and H.-J.
Warnecke, “Oxygen sensing by fluorescence quenching of [Cu(btmgp)I],” Journal
of Luminescence, vol. 130, no. 10, pp. 1958–1962, 2010.
mla: Herres-Pawlis, Sonja, et al. “Oxygen Sensing by Fluorescence Quenching of [Cu(Btmgp)I].”
Journal of Luminescence, vol. 130, no. 10, Elsevier BV, 2010, pp. 1958–62,
doi:10.1016/j.jlumin.2010.05.012.
short: S. Herres-Pawlis, G. Berth, V. Wiedemeier, L. Schmidt, A. Zrenner, H.-J.
Warnecke, Journal of Luminescence 130 (2010) 1958–1962.
date_created: 2018-09-20T12:31:16Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1016/j.jlumin.2010.05.012
intvolume: ' 130'
issue: '10'
keyword:
- Copper Oxygen Fluorescence quenching N donor ligands
language:
- iso: eng
page: 1958-1962
publication: Journal of Luminescence
publication_identifier:
issn:
- 0022-2313
publication_status: published
publisher: Elsevier BV
status: public
title: Oxygen sensing by fluorescence quenching of [Cu(btmgp)I]
type: journal_article
user_id: '49428'
volume: 130
year: '2010'
...
---
_id: '4549'
abstract:
- lang: eng
text: Damage caused by laser irradiation on the surface of ZnTe epilayers was studied
by micro-Raman and atomic force microscopy (AFM). ZnTe LO-phonon overtones up
to four order and TO + (n − 1)LO zone-center phonons were observed in the resonant
micro-Raman spectra at room temperature. Discrepancies in the literature regarding
the origin of two features observed at low frequencies around 120 and 140 cm−1
in the Raman spectrum of ZnTe are discussed and resolved. These Raman peaks were
not detected by using a low excitation laser power density on a Zn-terminated
ZnTe surface; however, with the increase of the laser power density they were
found to arise irreversibly. The correspondence of these peaks in a wave number
with the strongest Raman peaks of the crystalline tellurium phase and the intensity
enhancement behavior with the laser power in a similar way as for CdTe strongly
suggests the formation of crystalline tellurium aggregates on the layer surface
due to laser irradiation damage. AFM data reveal the occurrence of laser ablation
on the ZnTe surface even though the surface temperature of the sample is below
the melting point.
article_number: '075003'
article_type: original
author:
- first_name: E M
full_name: Larramendi, E M
last_name: Larramendi
- first_name: Gerhard
full_name: Berth, Gerhard
id: '53'
last_name: Berth
- first_name: V
full_name: Wiedemeier, V
last_name: Wiedemeier
- first_name: K-P
full_name: Hüsch, K-P
last_name: Hüsch
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: U
full_name: Woggon, U
last_name: Woggon
- first_name: E
full_name: Tschumak, E
last_name: Tschumak
- first_name: K
full_name: Lischka, K
last_name: Lischka
- first_name: D
full_name: Schikora, D
last_name: Schikora
citation:
ama: Larramendi EM, Berth G, Wiedemeier V, et al. Intensity enhancement of Te Raman
modes by laser damage in ZnTe epilayers. Semiconductor Science and Technology.
2010;25(7). doi:10.1088/0268-1242/25/7/075003
apa: Larramendi, E. M., Berth, G., Wiedemeier, V., Hüsch, K.-P., Zrenner, A., Woggon,
U., … Schikora, D. (2010). Intensity enhancement of Te Raman modes by laser damage
in ZnTe epilayers. Semiconductor Science and Technology, 25(7).
https://doi.org/10.1088/0268-1242/25/7/075003
bibtex: '@article{Larramendi_Berth_Wiedemeier_Hüsch_Zrenner_Woggon_Tschumak_Lischka_Schikora_2010,
title={Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers},
volume={25}, DOI={10.1088/0268-1242/25/7/075003},
number={7075003}, journal={Semiconductor Science and Technology}, publisher={IOP
Publishing}, author={Larramendi, E M and Berth, Gerhard and Wiedemeier, V and
Hüsch, K-P and Zrenner, Artur and Woggon, U and Tschumak, E and Lischka, K and
Schikora, D}, year={2010} }'
chicago: Larramendi, E M, Gerhard Berth, V Wiedemeier, K-P Hüsch, Artur Zrenner,
U Woggon, E Tschumak, K Lischka, and D Schikora. “Intensity Enhancement of Te
Raman Modes by Laser Damage in ZnTe Epilayers.” Semiconductor Science and Technology
25, no. 7 (2010). https://doi.org/10.1088/0268-1242/25/7/075003.
ieee: E. M. Larramendi et al., “Intensity enhancement of Te Raman modes by
laser damage in ZnTe epilayers,” Semiconductor Science and Technology,
vol. 25, no. 7, 2010.
mla: Larramendi, E. M., et al. “Intensity Enhancement of Te Raman Modes by Laser
Damage in ZnTe Epilayers.” Semiconductor Science and Technology, vol. 25,
no. 7, 075003, IOP Publishing, 2010, doi:10.1088/0268-1242/25/7/075003.
short: E.M. Larramendi, G. Berth, V. Wiedemeier, K.-P. Hüsch, A. Zrenner, U. Woggon,
E. Tschumak, K. Lischka, D. Schikora, Semiconductor Science and Technology 25
(2010).
date_created: 2018-09-20T12:35:35Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1088/0268-1242/25/7/075003
intvolume: ' 25'
issue: '7'
language:
- iso: eng
publication: Semiconductor Science and Technology
publication_identifier:
issn:
- 0268-1242
- 1361-6641
publication_status: published
publisher: IOP Publishing
status: public
title: Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers
type: journal_article
user_id: '49428'
volume: 25
year: '2010'
...
---
_id: '4550'
abstract:
- lang: eng
text: We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled
molecular beam epitaxial growth into the intrinsic region of a p-i-n junction
diode. This is achieved using an in situ combination of focused ion beam prepatterning,
annealing, and overgrowth, resulting in arrays of individually electrically addressable
(In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence
spectroscopy we demonstrate that these QDs have the same optical quality as optically
pumped Stranski–Krastanov QDs with random nucleation located in proximity to a
doped interface. The results suggest that this technique is scalable and highly
interesting for different applications in quantum devices.
article_number: '143101'
article_type: original
author:
- first_name: M.
full_name: Mehta, M.
last_name: Mehta
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: S.
full_name: Michaelis de Vasconcellos, S.
last_name: Michaelis de Vasconcellos
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier
C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting
diode. Applied Physics Letters. 2010;97(14). doi:10.1063/1.3488812
apa: Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner,
A., & Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot
in a micron sized light emitting diode. Applied Physics Letters, 97(14).
https://doi.org/10.1063/1.3488812
bibtex: '@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010,
title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light
emitting diode}, volume={97}, DOI={10.1063/1.3488812},
number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos,
S. and Zrenner, Artur and Meier, Cedrik}, year={2010} }'
chicago: Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, Artur
Zrenner, and Cedrik Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot
in a Micron Sized Light Emitting Diode.” Applied Physics Letters 97, no.
14 (2010). https://doi.org/10.1063/1.3488812.
ieee: M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized
light emitting diode,” Applied Physics Letters, vol. 97, no. 14, 2010.
mla: Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron
Sized Light Emitting Diode.” Applied Physics Letters, vol. 97, no. 14,
143101, AIP Publishing, 2010, doi:10.1063/1.3488812.
short: M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
C. Meier, Applied Physics Letters 97 (2010).
date_created: 2018-09-20T12:38:51Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '287'
doi: 10.1063/1.3488812
intvolume: ' 97'
issue: '14'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting
diode
type: journal_article
user_id: '20798'
volume: 97
year: '2010'
...
---
_id: '4551'
abstract:
- lang: eng
text: An intentional positioning of optically active quantum dots using site-selective
growth by a combination of molecular beam epitaxy (MBE) and focused ion beam (FIB)
implantation in an all-ultra-high-vacuum (UHV) setup has been successfully demonstrated.
A square array of periodic holes on GaAs substrate was fabricated with FIB of
30 keV ions followed by an in situ annealing step. Subsequently, the patterned
holes were overgrown with an optimized amount of InAs in order to achieve site-selective
growth of the QDs on the patterned holes. Under well-optimized conditions, a selectivity
of single quantum dot growth in the patterned holes of 52% was achieved. Thereafter,
carrier injection and subsequent radiative recombination from the positioned InAs/GaAs
self-assembled QDs was investigated by embedding the QDs in the intrinsic part
of a GaAs-based p–i–n junction device. Electroluminescence spectra taken at 77
K show interband transitions up to the fifth excited state from the QDs.
article_type: original
author:
- first_name: Minisha
full_name: Mehta, Minisha
last_name: Mehta
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Alexander
full_name: Melnikov, Alexander
last_name: Melnikov
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Steffen
full_name: Michaelis de Vasconcellos, Steffen
last_name: Michaelis de Vasconcellos
- first_name: Tim
full_name: Baumgarten, Tim
last_name: Baumgarten
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: 'Mehta M, Reuter D, Melnikov A, et al. Intentionally positioned self-assembled
InAs quantum dots in an electroluminescent p–i–n junction diode. Physica E:
Low-dimensional Systems and Nanostructures. 2010;42(10):2749-2752. doi:10.1016/j.physe.2009.12.053'
apa: 'Mehta, M., Reuter, D., Melnikov, A., Wieck, A. D., Michaelis de Vasconcellos,
S., Baumgarten, T., … Meier, C. (2010). Intentionally positioned self-assembled
InAs quantum dots in an electroluminescent p–i–n junction diode. Physica E:
Low-Dimensional Systems and Nanostructures, 42(10), 2749–2752. https://doi.org/10.1016/j.physe.2009.12.053'
bibtex: '@article{Mehta_Reuter_Melnikov_Wieck_Michaelis de Vasconcellos_Baumgarten_Zrenner_Meier_2010,
title={Intentionally positioned self-assembled InAs quantum dots in an electroluminescent
p–i–n junction diode}, volume={42}, DOI={10.1016/j.physe.2009.12.053},
number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures},
publisher={Elsevier BV}, author={Mehta, Minisha and Reuter, Dirk and Melnikov,
Alexander and Wieck, Andreas D. and Michaelis de Vasconcellos, Steffen and Baumgarten,
Tim and Zrenner, Artur and Meier, Cedrik}, year={2010}, pages={2749–2752} }'
chicago: 'Mehta, Minisha, Dirk Reuter, Alexander Melnikov, Andreas D. Wieck, Steffen
Michaelis de Vasconcellos, Tim Baumgarten, Artur Zrenner, and Cedrik Meier. “Intentionally
Positioned Self-Assembled InAs Quantum Dots in an Electroluminescent p–i–n Junction
Diode.” Physica E: Low-Dimensional Systems and Nanostructures 42, no. 10
(2010): 2749–52. https://doi.org/10.1016/j.physe.2009.12.053.'
ieee: 'M. Mehta et al., “Intentionally positioned self-assembled InAs quantum
dots in an electroluminescent p–i–n junction diode,” Physica E: Low-dimensional
Systems and Nanostructures, vol. 42, no. 10, pp. 2749–2752, 2010.'
mla: 'Mehta, Minisha, et al. “Intentionally Positioned Self-Assembled InAs Quantum
Dots in an Electroluminescent p–i–n Junction Diode.” Physica E: Low-Dimensional
Systems and Nanostructures, vol. 42, no. 10, Elsevier BV, 2010, pp. 2749–52,
doi:10.1016/j.physe.2009.12.053.'
short: 'M. Mehta, D. Reuter, A. Melnikov, A.D. Wieck, S. Michaelis de Vasconcellos,
T. Baumgarten, A. Zrenner, C. Meier, Physica E: Low-Dimensional Systems and Nanostructures
42 (2010) 2749–2752.'
date_created: 2018-09-20T12:42:40Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '287'
doi: 10.1016/j.physe.2009.12.053
intvolume: ' 42'
issue: '10'
keyword:
- Molecular beam epitaxy
- Focused ion beam
- Self-assembled quantum dot
- Electroluminescence
language:
- iso: eng
page: 2749-2752
publication: 'Physica E: Low-dimensional Systems and Nanostructures'
publication_identifier:
issn:
- 1386-9477
publication_status: published
publisher: Elsevier BV
status: public
title: Intentionally positioned self-assembled InAs quantum dots in an electroluminescent
p–i–n junction diode
type: journal_article
user_id: '20798'
volume: 42
year: '2010'
...
---
_id: '4552'
abstract:
- lang: eng
text: Here we report on investigations on CdSe quantum dots incorporated in ZnSe
based Schottky photodiodes with near-field shadow masks. Photoluminescence and
photocurrent of individual quantum dots were studied as a function of the applied
bias voltage. The exciton energy of the quantum dot ground state transition was
shifted to the excitation energy by using the Stark effect tuning via an external
bias voltage. Under the condition of resonance with the laser excitation energy
we observed a resonant photocurrent signal due to the tunnelling of carriers out
of the quantum dots at electric fields above 500 kV/cm.
article_type: original
author:
- first_name: M.
full_name: Panfilova, M.
last_name: Panfilova
- first_name: S.
full_name: Michaelis de Vasconcellos, S.
last_name: Michaelis de Vasconcellos
- first_name: A.
full_name: Pawlis, A.
last_name: Pawlis
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
citation:
ama: 'Panfilova M, Michaelis de Vasconcellos S, Pawlis A, Lischka K, Zrenner A.
Resonant photocurrent-spectroscopy of individual CdSe quantum dots. Physica
E: Low-dimensional Systems and Nanostructures. 2010;42(10):2521-2523. doi:10.1016/j.physe.2010.01.013'
apa: 'Panfilova, M., Michaelis de Vasconcellos, S., Pawlis, A., Lischka, K., &
Zrenner, A. (2010). Resonant photocurrent-spectroscopy of individual CdSe quantum
dots. Physica E: Low-Dimensional Systems and Nanostructures, 42(10),
2521–2523. https://doi.org/10.1016/j.physe.2010.01.013'
bibtex: '@article{Panfilova_Michaelis de Vasconcellos_Pawlis_Lischka_Zrenner_2010,
title={Resonant photocurrent-spectroscopy of individual CdSe quantum dots}, volume={42},
DOI={10.1016/j.physe.2010.01.013},
number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures},
publisher={Elsevier BV}, author={Panfilova, M. and Michaelis de Vasconcellos,
S. and Pawlis, A. and Lischka, K. and Zrenner, Artur}, year={2010}, pages={2521–2523}
}'
chicago: 'Panfilova, M., S. Michaelis de Vasconcellos, A. Pawlis, K. Lischka, and
Artur Zrenner. “Resonant Photocurrent-Spectroscopy of Individual CdSe Quantum
Dots.” Physica E: Low-Dimensional Systems and Nanostructures 42, no. 10
(2010): 2521–23. https://doi.org/10.1016/j.physe.2010.01.013.'
ieee: 'M. Panfilova, S. Michaelis de Vasconcellos, A. Pawlis, K. Lischka, and A.
Zrenner, “Resonant photocurrent-spectroscopy of individual CdSe quantum dots,”
Physica E: Low-dimensional Systems and Nanostructures, vol. 42, no. 10,
pp. 2521–2523, 2010.'
mla: 'Panfilova, M., et al. “Resonant Photocurrent-Spectroscopy of Individual CdSe
Quantum Dots.” Physica E: Low-Dimensional Systems and Nanostructures, vol.
42, no. 10, Elsevier BV, 2010, pp. 2521–23, doi:10.1016/j.physe.2010.01.013.'
short: 'M. Panfilova, S. Michaelis de Vasconcellos, A. Pawlis, K. Lischka, A. Zrenner,
Physica E: Low-Dimensional Systems and Nanostructures 42 (2010) 2521–2523.'
date_created: 2018-09-20T12:45:46Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1016/j.physe.2010.01.013
intvolume: ' 42'
issue: '10'
keyword:
- CdSe/ZnSe quantum dots
- Photodiode
- Quantum confined Stark Effect
- Photocurrent
- II–VI Semiconductors
language:
- iso: eng
page: 2521-2523
publication: 'Physica E: Low-dimensional Systems and Nanostructures'
publication_identifier:
issn:
- 1386-9477
publication_status: published
publisher: Elsevier BV
status: public
title: Resonant photocurrent-spectroscopy of individual CdSe quantum dots
type: journal_article
user_id: '49428'
volume: 42
year: '2010'
...
---
_id: '7251'
author:
- first_name: Atsushi
full_name: Ishikawa, Atsushi
last_name: Ishikawa
- first_name: Rupert F.
full_name: Oulton, Rupert F.
last_name: Oulton
- first_name: Thomas
full_name: Zentgraf, Thomas
id: '30525'
last_name: Zentgraf
orcid: 0000-0002-8662-1101
- first_name: Xiang
full_name: Zhang, Xiang
last_name: Zhang
citation:
ama: 'Ishikawa A, Oulton RF, Zentgraf T, Zhang X. Extremely low-loss slow-light
modes in plasmonic dielectric hybrid systems. In: Stockman MI, ed. Plasmonics:
Metallic Nanostructures and Their Optical Properties VIII. SPIE; 2010. doi:10.1117/12.860190'
apa: 'Ishikawa, A., Oulton, R. F., Zentgraf, T., & Zhang, X. (2010). Extremely
low-loss slow-light modes in plasmonic dielectric hybrid systems. In M. I. Stockman
(Ed.), Plasmonics: Metallic Nanostructures and Their Optical Properties VIII.
SPIE. https://doi.org/10.1117/12.860190'
bibtex: '@inproceedings{Ishikawa_Oulton_Zentgraf_Zhang_2010, title={Extremely low-loss
slow-light modes in plasmonic dielectric hybrid systems}, DOI={10.1117/12.860190},
booktitle={Plasmonics: Metallic Nanostructures and Their Optical Properties VIII},
publisher={SPIE}, author={Ishikawa, Atsushi and Oulton, Rupert F. and Zentgraf,
Thomas and Zhang, Xiang}, editor={Stockman, Mark I.Editor}, year={2010} }'
chicago: 'Ishikawa, Atsushi, Rupert F. Oulton, Thomas Zentgraf, and Xiang Zhang.
“Extremely Low-Loss Slow-Light Modes in Plasmonic Dielectric Hybrid Systems.”
In Plasmonics: Metallic Nanostructures and Their Optical Properties VIII,
edited by Mark I. Stockman. SPIE, 2010. https://doi.org/10.1117/12.860190.'
ieee: 'A. Ishikawa, R. F. Oulton, T. Zentgraf, and X. Zhang, “Extremely low-loss
slow-light modes in plasmonic dielectric hybrid systems,” in Plasmonics: Metallic
Nanostructures and Their Optical Properties VIII, 2010.'
mla: 'Ishikawa, Atsushi, et al. “Extremely Low-Loss Slow-Light Modes in Plasmonic
Dielectric Hybrid Systems.” Plasmonics: Metallic Nanostructures and Their Optical
Properties VIII, edited by Mark I. Stockman, SPIE, 2010, doi:10.1117/12.860190.'
short: 'A. Ishikawa, R.F. Oulton, T. Zentgraf, X. Zhang, in: M.I. Stockman (Ed.),
Plasmonics: Metallic Nanostructures and Their Optical Properties VIII, SPIE, 2010.'
date_created: 2019-01-30T07:22:54Z
date_updated: 2022-01-06T07:03:30Z
department:
- _id: '15'
- _id: '230'
doi: 10.1117/12.860190
editor:
- first_name: Mark I.
full_name: Stockman, Mark I.
last_name: Stockman
language:
- iso: eng
publication: 'Plasmonics: Metallic Nanostructures and Their Optical Properties VIII'
publication_status: published
publisher: SPIE
status: public
title: Extremely low-loss slow-light modes in plasmonic dielectric hybrid systems
type: conference
user_id: '30525'
year: '2010'
...
---
_id: '7252'
author:
- first_name: Volker J.
full_name: Sorger, Volker J.
last_name: Sorger
- first_name: Rupert F.
full_name: Oulton, Rupert F.
last_name: Oulton
- first_name: Thomas
full_name: Zentgraf, Thomas
id: '30525'
last_name: Zentgraf
orcid: 0000-0002-8662-1101
- first_name: Renmin
full_name: Ma, Renmin
last_name: Ma
- first_name: Christopher
full_name: Gladden, Christopher
last_name: Gladden
- first_name: Lun
full_name: Dai, Lun
last_name: Dai
- first_name: Guy
full_name: Bartal, Guy
last_name: Bartal
- first_name: Xiang
full_name: Zhang, Xiang
last_name: Zhang
citation:
ama: 'Sorger VJ, Oulton RF, Zentgraf T, et al. Semiconductor plasmon laser. In:
Stockman MI, ed. Plasmonics: Metallic Nanostructures and Their Optical Properties
VIII. SPIE; 2010. doi:10.1117/12.859136'
apa: 'Sorger, V. J., Oulton, R. F., Zentgraf, T., Ma, R., Gladden, C., Dai, L.,
… Zhang, X. (2010). Semiconductor plasmon laser. In M. I. Stockman (Ed.), Plasmonics:
Metallic Nanostructures and Their Optical Properties VIII. SPIE. https://doi.org/10.1117/12.859136'
bibtex: '@inproceedings{Sorger_Oulton_Zentgraf_Ma_Gladden_Dai_Bartal_Zhang_2010,
title={Semiconductor plasmon laser}, DOI={10.1117/12.859136},
booktitle={Plasmonics: Metallic Nanostructures and Their Optical Properties VIII},
publisher={SPIE}, author={Sorger, Volker J. and Oulton, Rupert F. and Zentgraf,
Thomas and Ma, Renmin and Gladden, Christopher and Dai, Lun and Bartal, Guy and
Zhang, Xiang}, editor={Stockman, Mark I.Editor}, year={2010} }'
chicago: 'Sorger, Volker J., Rupert F. Oulton, Thomas Zentgraf, Renmin Ma, Christopher
Gladden, Lun Dai, Guy Bartal, and Xiang Zhang. “Semiconductor Plasmon Laser.”
In Plasmonics: Metallic Nanostructures and Their Optical Properties VIII,
edited by Mark I. Stockman. SPIE, 2010. https://doi.org/10.1117/12.859136.'
ieee: 'V. J. Sorger et al., “Semiconductor plasmon laser,” in Plasmonics:
Metallic Nanostructures and Their Optical Properties VIII, 2010.'
mla: 'Sorger, Volker J., et al. “Semiconductor Plasmon Laser.” Plasmonics: Metallic
Nanostructures and Their Optical Properties VIII, edited by Mark I. Stockman,
SPIE, 2010, doi:10.1117/12.859136.'
short: 'V.J. Sorger, R.F. Oulton, T. Zentgraf, R. Ma, C. Gladden, L. Dai, G. Bartal,
X. Zhang, in: M.I. Stockman (Ed.), Plasmonics: Metallic Nanostructures and Their
Optical Properties VIII, SPIE, 2010.'
date_created: 2019-01-30T07:24:06Z
date_updated: 2022-01-06T07:03:30Z
department:
- _id: '15'
- _id: '230'
doi: 10.1117/12.859136
editor:
- first_name: Mark I.
full_name: Stockman, Mark I.
last_name: Stockman
language:
- iso: eng
publication: 'Plasmonics: Metallic Nanostructures and Their Optical Properties VIII'
publication_status: published
publisher: SPIE
status: public
title: Semiconductor plasmon laser
type: conference
user_id: '30525'
year: '2010'
...
---
_id: '7494'
article_number: H119
author:
- first_name: M.
full_name: Mehta, M.
last_name: Mehta
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Mehta M, Meier C. Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single
Crystals. Journal of The Electrochemical Society. 2010;158(2). doi:10.1149/1.3519999
apa: Mehta, M., & Meier, C. (2010). Controlled Etching Behavior of O-Polar and
Zn-Polar ZnO Single Crystals. Journal of The Electrochemical Society, 158(2).
https://doi.org/10.1149/1.3519999
bibtex: '@article{Mehta_Meier_2010, title={Controlled Etching Behavior of O-Polar
and Zn-Polar ZnO Single Crystals}, volume={158}, DOI={10.1149/1.3519999},
number={2H119}, journal={Journal of The Electrochemical Society}, publisher={The
Electrochemical Society}, author={Mehta, M. and Meier, Cedrik}, year={2010} }'
chicago: Mehta, M., and Cedrik Meier. “Controlled Etching Behavior of O-Polar and
Zn-Polar ZnO Single Crystals.” Journal of The Electrochemical Society 158,
no. 2 (2010). https://doi.org/10.1149/1.3519999.
ieee: M. Mehta and C. Meier, “Controlled Etching Behavior of O-Polar and Zn-Polar
ZnO Single Crystals,” Journal of The Electrochemical Society, vol. 158,
no. 2, 2010.
mla: Mehta, M., and Cedrik Meier. “Controlled Etching Behavior of O-Polar and Zn-Polar
ZnO Single Crystals.” Journal of The Electrochemical Society, vol. 158,
no. 2, H119, The Electrochemical Society, 2010, doi:10.1149/1.3519999.
short: M. Mehta, C. Meier, Journal of The Electrochemical Society 158 (2010).
date_created: 2019-02-04T14:35:22Z
date_updated: 2022-01-06T07:03:39Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '287'
doi: 10.1149/1.3519999
intvolume: ' 158'
issue: '2'
language:
- iso: eng
publication: Journal of The Electrochemical Society
publication_identifier:
issn:
- 0013-4651
publication_status: published
publisher: The Electrochemical Society
status: public
title: Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals
type: journal_article
user_id: '20798'
volume: 158
year: '2010'
...
---
_id: '7496'
article_number: '455201'
author:
- first_name: Jens
full_name: Theis, Jens
last_name: Theis
- first_name: Martin
full_name: Geller, Martin
last_name: Geller
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
- first_name: Hartmut
full_name: Wiggers, Hartmut
last_name: Wiggers
- first_name: Andreas
full_name: Wieck, Andreas
last_name: Wieck
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Theis J, Geller M, Lorke A, Wiggers H, Wieck A, Meier C. Electroluminescence
from silicon nanoparticles fabricated from the gas phase. Nanotechnology.
2010;21(45). doi:10.1088/0957-4484/21/45/455201
apa: Theis, J., Geller, M., Lorke, A., Wiggers, H., Wieck, A., & Meier, C. (2010).
Electroluminescence from silicon nanoparticles fabricated from the gas phase.
Nanotechnology, 21(45). https://doi.org/10.1088/0957-4484/21/45/455201
bibtex: '@article{Theis_Geller_Lorke_Wiggers_Wieck_Meier_2010, title={Electroluminescence
from silicon nanoparticles fabricated from the gas phase}, volume={21}, DOI={10.1088/0957-4484/21/45/455201},
number={45455201}, journal={Nanotechnology}, publisher={IOP Publishing}, author={Theis,
Jens and Geller, Martin and Lorke, Axel and Wiggers, Hartmut and Wieck, Andreas
and Meier, Cedrik}, year={2010} }'
chicago: Theis, Jens, Martin Geller, Axel Lorke, Hartmut Wiggers, Andreas Wieck,
and Cedrik Meier. “Electroluminescence from Silicon Nanoparticles Fabricated from
the Gas Phase.” Nanotechnology 21, no. 45 (2010). https://doi.org/10.1088/0957-4484/21/45/455201.
ieee: J. Theis, M. Geller, A. Lorke, H. Wiggers, A. Wieck, and C. Meier, “Electroluminescence
from silicon nanoparticles fabricated from the gas phase,” Nanotechnology,
vol. 21, no. 45, 2010.
mla: Theis, Jens, et al. “Electroluminescence from Silicon Nanoparticles Fabricated
from the Gas Phase.” Nanotechnology, vol. 21, no. 45, 455201, IOP Publishing,
2010, doi:10.1088/0957-4484/21/45/455201.
short: J. Theis, M. Geller, A. Lorke, H. Wiggers, A. Wieck, C. Meier, Nanotechnology
21 (2010).
date_created: 2019-02-04T14:39:19Z
date_updated: 2022-01-06T07:03:39Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '287'
doi: 10.1088/0957-4484/21/45/455201
intvolume: ' 21'
issue: '45'
language:
- iso: eng
publication: Nanotechnology
publication_identifier:
issn:
- 0957-4484
- 1361-6528
publication_status: published
publisher: IOP Publishing
status: public
title: Electroluminescence from silicon nanoparticles fabricated from the gas phase
type: journal_article
user_id: '20798'
volume: 21
year: '2010'
...
---
_id: '4129'
abstract:
- lang: eng
text: We study a single quantum dot molecule doped with one electron in the presence
of electron-phonon coupling. Both diagonal and off-diagonal interactions representing
real and virtual processes with acoustic phonons via deformation potential and
piezoelectric coupling are taken into account. We employ a non-perturbative quantum
kinetic theory and show that the phonon-mediated relaxation is dominated by an
electron tunneling on a picosecond time scale.A dependence of the relaxation on
the temperature and the strength of the tunneling coupling is analyzed.
article_number: '012035'
article_type: original
author:
- first_name: Anna
full_name: Grodecka-Grad, Anna
last_name: Grodecka-Grad
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
citation:
ama: 'Grodecka-Grad A, Förstner J. Phonon-mediated relaxation in doped quantum dot
molecules. Journal of Physics: Conference Series. 2010;245. doi:10.1088/1742-6596/245/1/012035'
apa: 'Grodecka-Grad, A., & Förstner, J. (2010). Phonon-mediated relaxation in
doped quantum dot molecules. Journal of Physics: Conference Series, 245.
https://doi.org/10.1088/1742-6596/245/1/012035'
bibtex: '@article{Grodecka-Grad_Förstner_2010, title={Phonon-mediated relaxation
in doped quantum dot molecules}, volume={245}, DOI={10.1088/1742-6596/245/1/012035},
number={012035}, journal={Journal of Physics: Conference Series}, publisher={IOP
Publishing}, author={Grodecka-Grad, Anna and Förstner, Jens}, year={2010} }'
chicago: 'Grodecka-Grad, Anna, and Jens Förstner. “Phonon-Mediated Relaxation in
Doped Quantum Dot Molecules.” Journal of Physics: Conference Series 245
(2010). https://doi.org/10.1088/1742-6596/245/1/012035.'
ieee: 'A. Grodecka-Grad and J. Förstner, “Phonon-mediated relaxation in doped quantum
dot molecules,” Journal of Physics: Conference Series, vol. 245, 2010.'
mla: 'Grodecka-Grad, Anna, and Jens Förstner. “Phonon-Mediated Relaxation in Doped
Quantum Dot Molecules.” Journal of Physics: Conference Series, vol. 245,
012035, IOP Publishing, 2010, doi:10.1088/1742-6596/245/1/012035.'
short: 'A. Grodecka-Grad, J. Förstner, Journal of Physics: Conference Series 245
(2010).'
date_created: 2018-08-27T10:33:04Z
date_updated: 2022-01-06T07:00:22Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1088/1742-6596/245/1/012035
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-27T10:34:26Z
date_updated: 2018-08-27T10:34:26Z
file_id: '4130'
file_name: 2010 Grodecka-Grad,Förstner_Phonon-mediated relaxation in doped quantum
dot molecules.pdf
file_size: 896613
relation: main_file
success: 1
file_date_updated: 2018-08-27T10:34:26Z
has_accepted_license: '1'
intvolume: ' 245'
keyword:
- tet_topic_qd
language:
- iso: eng
publication: 'Journal of Physics: Conference Series'
publication_identifier:
issn:
- 1742-6596
publication_status: published
publisher: IOP Publishing
status: public
title: Phonon-mediated relaxation in doped quantum dot molecules
type: journal_article
user_id: '55706'
volume: 245
year: '2010'
...