---
_id: '4144'
abstract:
- lang: eng
text: "Non-polar relaxed cubic GaN was grown by molecular beam epitaxy (MBE) on
nano-patterned 3C-SiC/Si \r\n(0 0 1)substrates with negligible hexagonal content
and less defect density than in planar cubic GaN layers.Nano-patterning of 3C-SiC/Si(001)
is achieved by self-ordered colloidal masks for the first time. The method presented
here offers the possibility to create nano-patterned cubic GaN without the need
for a GaN etching process andt hus isa potential alternative to the conventional
top–down fabrication techniques."
article_type: original
author:
- first_name: R.M.
full_name: Kemper, R.M.
last_name: Kemper
- first_name: M.
full_name: Weinl, M.
last_name: Weinl
- first_name: C.
full_name: Mietze, C.
last_name: Mietze
- first_name: M.
full_name: Häberlen, M.
last_name: Häberlen
- first_name: T.
full_name: Schupp, T.
last_name: Schupp
- first_name: E.
full_name: Tschumak, E.
last_name: Tschumak
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
- first_name: 'Donald '
full_name: 'As, Donald '
last_name: As
citation:
ama: Kemper RM, Weinl M, Mietze C, et al. Growth of cubic GaN on nano-patterned
3C-SiC/Si (001) substrates. Journal of Crystal Growth. 2010;323(1):84-87.
doi:10.1016/j.jcrysgro.2010.12.042
apa: Kemper, R. M., Weinl, M., Mietze, C., Häberlen, M., Schupp, T., Tschumak, E.,
… As, D. (2010). Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates.
Journal of Crystal Growth, 323(1), 84–87. https://doi.org/10.1016/j.jcrysgro.2010.12.042
bibtex: '@article{Kemper_Weinl_Mietze_Häberlen_Schupp_Tschumak_Lindner_Lischka_As_2010,
title={Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates}, volume={323},
DOI={10.1016/j.jcrysgro.2010.12.042},
number={1}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Kemper,
R.M. and Weinl, M. and Mietze, C. and Häberlen, M. and Schupp, T. and Tschumak,
E. and Lindner, Jörg and Lischka, K. and As, Donald }, year={2010}, pages={84–87}
}'
chicago: 'Kemper, R.M., M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak,
Jörg Lindner, K. Lischka, and Donald As. “Growth of Cubic GaN on Nano-Patterned
3C-SiC/Si (001) Substrates.” Journal of Crystal Growth 323, no. 1 (2010):
84–87. https://doi.org/10.1016/j.jcrysgro.2010.12.042.'
ieee: R. M. Kemper et al., “Growth of cubic GaN on nano-patterned 3C-SiC/Si
(001) substrates,” Journal of Crystal Growth, vol. 323, no. 1, pp. 84–87,
2010.
mla: Kemper, R. M., et al. “Growth of Cubic GaN on Nano-Patterned 3C-SiC/Si (001)
Substrates.” Journal of Crystal Growth, vol. 323, no. 1, Elsevier BV, 2010,
pp. 84–87, doi:10.1016/j.jcrysgro.2010.12.042.
short: R.M. Kemper, M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak, J.
Lindner, K. Lischka, D. As, Journal of Crystal Growth 323 (2010) 84–87.
date_created: 2018-08-27T12:34:33Z
date_updated: 2022-01-06T07:00:24Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1016/j.jcrysgro.2010.12.042
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-27T12:35:32Z
date_updated: 2018-08-27T12:35:32Z
file_id: '4145'
file_name: Growth of cubic GaN on nano-patterned 3C-SiC (001) substrates.pdf
file_size: 665964
relation: main_file
success: 1
file_date_updated: 2018-08-27T12:35:32Z
has_accepted_license: '1'
intvolume: ' 323'
issue: '1'
language:
- iso: eng
page: 84-87
publication: Journal of Crystal Growth
publication_identifier:
issn:
- 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates
type: journal_article
user_id: '55706'
volume: 323
year: '2010'
...
---
_id: '4153'
abstract:
- lang: eng
text: Nanosphere lithography (NSL) masks consisting of mono- or double-layers of
polystyrene (PS) nano-beads are fabricated on silicon exploiting the self-organization
of PS particles during the controlled drying of a colloidal suspension on a surface.
The shape changes and shrinkage of PS sphere masks upon treatment in an air plasma
are studied as a function of initial sphere size, plasma power and treatment time.
The influence of several experimental parameters, including the plasma induced
temperature rise, are analysed using scanning and transmission electron microscopy.
It is demonstrated that a variety of new intriguing nanopatterns can be generated
on silicon surfaces by the combination of NSL and plasma techniques, largely broadening
the variety of patterns available so far by NSL.
article_type: original
author:
- first_name: D.
full_name: Gogel, D.
last_name: Gogel
- first_name: M.
full_name: Weinl, M.
last_name: Weinl
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: B.
full_name: Stritzker, B.
last_name: Stritzker
citation:
ama: Gogel D, Weinl M, Lindner J, Stritzker B. Plasma modification of nanosphere
lithography masks made of polystyrene beads. JOURNAL OF OPTOELECTRONICS AND
ADVANCED MATERIALS. 2010;12(3):740-744.
apa: Gogel, D., Weinl, M., Lindner, J., & Stritzker, B. (2010). Plasma modification
of nanosphere lithography masks made of polystyrene beads. JOURNAL OF OPTOELECTRONICS
AND ADVANCED MATERIALS, 12(3), 740–744.
bibtex: '@article{Gogel_Weinl_Lindner_Stritzker_2010, title={Plasma modification
of nanosphere lithography masks made of polystyrene beads}, volume={12}, number={3},
journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS}, author={Gogel, D.
and Weinl, M. and Lindner, Jörg and Stritzker, B.}, year={2010}, pages={740–744}
}'
chicago: 'Gogel, D., M. Weinl, Jörg Lindner, and B. Stritzker. “Plasma Modification
of Nanosphere Lithography Masks Made of Polystyrene Beads.” JOURNAL OF OPTOELECTRONICS
AND ADVANCED MATERIALS 12, no. 3 (2010): 740–44.'
ieee: D. Gogel, M. Weinl, J. Lindner, and B. Stritzker, “Plasma modification of
nanosphere lithography masks made of polystyrene beads,” JOURNAL OF OPTOELECTRONICS
AND ADVANCED MATERIALS, vol. 12, no. 3, pp. 740–744, 2010.
mla: Gogel, D., et al. “Plasma Modification of Nanosphere Lithography Masks Made
of Polystyrene Beads.” JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS,
vol. 12, no. 3, 2010, pp. 740–44.
short: D. Gogel, M. Weinl, J. Lindner, B. Stritzker, JOURNAL OF OPTOELECTRONICS
AND ADVANCED MATERIALS 12 (2010) 740–744.
date_created: 2018-08-27T13:29:28Z
date_updated: 2022-01-06T07:00:26Z
department:
- _id: '286'
- _id: '230'
intvolume: ' 12'
issue: '3'
language:
- iso: eng
page: 740-744
publication: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
status: public
title: Plasma modification of nanosphere lithography masks made of polystyrene beads
type: journal_article
user_id: '55706'
volume: 12
year: '2010'
...
---
_id: '4174'
abstract:
- lang: eng
text: "A quantum dot molecule doped with a single electron in the presence of diagonal
and off-diagonal carrierphonon\r\ncouplings is studied by means of a nonperturbative
quantum kinetic theory. The interaction with acoustic phonons by deformation potential
and piezoelectric coupling is taken into account. We show that the phonon-mediated
relaxation is fast on a picosecond time scale and is dominated by the usually
neglected off-diagonal coupling to the lattice degrees of freedom leading to phonon-assisted
electron tunneling. We show that in the parameter regime of current electrical
and optical experiments, the microscopic non-Markovian theory has to be employed."
article_number: '115305'
article_type: original
author:
- first_name: A.
full_name: Grodecka-Grad, A.
last_name: Grodecka-Grad
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
citation:
ama: Grodecka-Grad A, Förstner J. Theory of phonon-mediated relaxation in doped
quantum dot molecules. Physical Review B. 2010;81(11). doi:10.1103/physrevb.81.115305
apa: Grodecka-Grad, A., & Förstner, J. (2010). Theory of phonon-mediated relaxation
in doped quantum dot molecules. Physical Review B, 81(11). https://doi.org/10.1103/physrevb.81.115305
bibtex: '@article{Grodecka-Grad_Förstner_2010, title={Theory of phonon-mediated
relaxation in doped quantum dot molecules}, volume={81}, DOI={10.1103/physrevb.81.115305},
number={11115305}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Grodecka-Grad, A. and Förstner, Jens}, year={2010} }'
chicago: Grodecka-Grad, A., and Jens Förstner. “Theory of Phonon-Mediated Relaxation
in Doped Quantum Dot Molecules.” Physical Review B 81, no. 11 (2010). https://doi.org/10.1103/physrevb.81.115305.
ieee: A. Grodecka-Grad and J. Förstner, “Theory of phonon-mediated relaxation in
doped quantum dot molecules,” Physical Review B, vol. 81, no. 11, 2010.
mla: Grodecka-Grad, A., and Jens Förstner. “Theory of Phonon-Mediated Relaxation
in Doped Quantum Dot Molecules.” Physical Review B, vol. 81, no. 11, 115305,
American Physical Society (APS), 2010, doi:10.1103/physrevb.81.115305.
short: A. Grodecka-Grad, J. Förstner, Physical Review B 81 (2010).
date_created: 2018-08-28T08:57:24Z
date_updated: 2022-01-06T07:00:29Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1103/physrevb.81.115305
file:
- access_level: open_access
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T08:58:21Z
date_updated: 2018-09-04T19:58:41Z
file_id: '4175'
file_name: 2010 Grodecka-Grad,Förstner_Theory of phonon-mediated relaxation in doped
quantum dot molecules.pdf
file_size: 680408
relation: main_file
file_date_updated: 2018-09-04T19:58:41Z
has_accepted_license: '1'
intvolume: ' 81'
issue: '11'
keyword:
- tet_topic_qd
language:
- iso: eng
oa: '1'
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Theory of phonon-mediated relaxation in doped quantum dot molecules
type: journal_article
urn: '41740'
user_id: '158'
volume: 81
year: '2010'
...
---
_id: '4194'
abstract:
- lang: eng
text: A heterojunction field-effect transistor (HFET) was fabricated of nonpolar
cubic AlGaN/GaN grown on Ar+ implanted 3C–SiC (001) by molecular beam epitaxy.
The device shows a clear field effect at positive bias voltages with V_th=0.6
V. The HFET output characteristics were calculated using ATLAS simulation program.
The electron channel at the cubic AlGaN/GaN interface was detected by room temperature
capacitance-voltage measurements.
article_number: '253501'
article_type: original
author:
- first_name: E.
full_name: Tschumak, E.
last_name: Tschumak
- first_name: R.
full_name: Granzner, R.
last_name: Granzner
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: F.
full_name: Schwierz, F.
last_name: Schwierz
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
- first_name: H.
full_name: Nagasawa, H.
last_name: Nagasawa
- first_name: M.
full_name: Abe, M.
last_name: Abe
- first_name: Donald
full_name: As, Donald
last_name: As
citation:
ama: Tschumak E, Granzner R, Lindner J, et al. Nonpolar cubic AlGaN/GaN heterojunction
field-effect transistor on Ar+ implanted 3C–SiC (001). Applied Physics Letters.
2010;96(25). doi:10.1063/1.3455066
apa: Tschumak, E., Granzner, R., Lindner, J., Schwierz, F., Lischka, K., Nagasawa,
H., … As, D. (2010). Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor
on Ar+ implanted 3C–SiC (001). Applied Physics Letters, 96(25).
https://doi.org/10.1063/1.3455066
bibtex: '@article{Tschumak_Granzner_Lindner_Schwierz_Lischka_Nagasawa_Abe_As_2010,
title={Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+
implanted 3C–SiC (001)}, volume={96}, DOI={10.1063/1.3455066},
number={25253501}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Tschumak, E. and Granzner, R. and Lindner, Jörg and Schwierz, F. and Lischka,
K. and Nagasawa, H. and Abe, M. and As, Donald}, year={2010} }'
chicago: Tschumak, E., R. Granzner, Jörg Lindner, F. Schwierz, K. Lischka, H. Nagasawa,
M. Abe, and Donald As. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor
on Ar+ Implanted 3C–SiC (001).” Applied Physics Letters 96, no. 25 (2010).
https://doi.org/10.1063/1.3455066.
ieee: E. Tschumak et al., “Nonpolar cubic AlGaN/GaN heterojunction field-effect
transistor on Ar+ implanted 3C–SiC (001),” Applied Physics Letters, vol.
96, no. 25, 2010.
mla: Tschumak, E., et al. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect
Transistor on Ar+ Implanted 3C–SiC (001).” Applied Physics Letters, vol.
96, no. 25, 253501, AIP Publishing, 2010, doi:10.1063/1.3455066.
short: E. Tschumak, R. Granzner, J. Lindner, F. Schwierz, K. Lischka, H. Nagasawa,
M. Abe, D. As, Applied Physics Letters 96 (2010).
date_created: 2018-08-28T11:56:08Z
date_updated: 2022-01-06T07:00:33Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1063/1.3455066
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T11:58:27Z
date_updated: 2018-08-28T11:58:27Z
file_id: '4195'
file_name: Non-polar cubic AlGaN-GaN HFET on Ar+ implanted 3C-SiC 001.pdf
file_size: 277385
relation: main_file
success: 1
file_date_updated: 2018-08-28T11:58:27Z
has_accepted_license: '1'
intvolume: ' 96'
issue: '25'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted
3C–SiC (001)
type: journal_article
user_id: '55706'
volume: 96
year: '2010'
...
---
_id: '4200'
abstract:
- lang: eng
text: "We studied the Fulde-Ferrell-Larkin-Ovchinnikov-type state established due
to the proximity effect in superconducting\r\nNb/Cu_41Ni_59 bilayers. Using a
special wedge-type deposition technique, series of 20–35\r\nsamples could be fabricated
by magnetron sputtering during one run. The layer thickness of only a few\r\nnanometers,
the composition of the alloy, and the quality of interfaces were controlled by
Rutherford backscattering\r\nspectrometry, high-resolution transmission electron
microscopy, and Auger spectroscopy. The magnetic\r\nproperties of the ferromagnetic
alloy layer were characterized with superconducting quantum interference\r\ndevice
magnetometry. These studies yield precise information about the thickness and
demonstrate the homogeneity\r\nof the alloy composition and magnetic properties
along the sample series. The dependencies of the\r\ncritical temperature on the
Nb and Cu41Ni59 layer thickness, T_c(d_S) and T_c(d_F), were investigated for
constant\r\nthickness d_F of the magnetic alloy layer and d_S of the superconducting
layer, respectively. All types of\r\nnonmonotonic behaviors of T_c versus d_F
predicted by the theory could be realized experimentally, from\r\nreentrant superconducting
behavior with a broad extinction region to a slight suppression of superconductivity\r\nwith
a shallow minimum. Even a double extinction of superconductivity was observed,
giving evidence for the\r\nmultiple reentrant behavior predicted by theory. All
critical temperature curves were fitted with suitable sets of\r\nparameters. Then,
T_c(d_F) diagrams of a hypothetical ferromagnet/superconductor/ferromagnet spin-switch
core\r\nstructure were calculated using these parameters. Finally, superconducting
spin-switch fabrication issues are\r\ndiscussed in detail in view of the achieved
results."
article_number: '054517'
article_type: original
author:
- first_name: V. I.
full_name: Zdravkov, V. I.
last_name: Zdravkov
- first_name: J.
full_name: Kehrle, J.
last_name: Kehrle
- first_name: G.
full_name: Obermeier, G.
last_name: Obermeier
- first_name: S.
full_name: Gsell, S.
last_name: Gsell
- first_name: M.
full_name: Schreck, M.
last_name: Schreck
- first_name: C.
full_name: Müller, C.
last_name: Müller
- first_name: H.-A.
full_name: Krug von Nidda, H.-A.
last_name: Krug von Nidda
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: J.
full_name: Moosburger-Will, J.
last_name: Moosburger-Will
- first_name: E.
full_name: Nold, E.
last_name: Nold
- first_name: R.
full_name: Morari, R.
last_name: Morari
- first_name: V. V.
full_name: Ryazanov, V. V.
last_name: Ryazanov
- first_name: A. S.
full_name: Sidorenko, A. S.
last_name: Sidorenko
- first_name: S.
full_name: Horn, S.
last_name: Horn
- first_name: R.
full_name: Tidecks, R.
last_name: Tidecks
- first_name: L. R.
full_name: Tagirov, L. R.
last_name: Tagirov
citation:
ama: Zdravkov VI, Kehrle J, Obermeier G, et al. Reentrant superconductivity in superconductor/ferromagnetic-alloy
bilayers. Physical Review B. 2010;82(5). doi:10.1103/physrevb.82.054517
apa: Zdravkov, V. I., Kehrle, J., Obermeier, G., Gsell, S., Schreck, M., Müller,
C., … Tagirov, L. R. (2010). Reentrant superconductivity in superconductor/ferromagnetic-alloy
bilayers. Physical Review B, 82(5). https://doi.org/10.1103/physrevb.82.054517
bibtex: '@article{Zdravkov_Kehrle_Obermeier_Gsell_Schreck_Müller_Krug von Nidda_Lindner_Moosburger-Will_Nold_et
al._2010, title={Reentrant superconductivity in superconductor/ferromagnetic-alloy
bilayers}, volume={82}, DOI={10.1103/physrevb.82.054517},
number={5054517}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Zdravkov, V. I. and Kehrle, J. and Obermeier, G. and Gsell, S.
and Schreck, M. and Müller, C. and Krug von Nidda, H.-A. and Lindner, Jörg and
Moosburger-Will, J. and Nold, E. and et al.}, year={2010} }'
chicago: Zdravkov, V. I., J. Kehrle, G. Obermeier, S. Gsell, M. Schreck, C. Müller,
H.-A. Krug von Nidda, et al. “Reentrant Superconductivity in Superconductor/Ferromagnetic-Alloy
Bilayers.” Physical Review B 82, no. 5 (2010). https://doi.org/10.1103/physrevb.82.054517.
ieee: V. I. Zdravkov et al., “Reentrant superconductivity in superconductor/ferromagnetic-alloy
bilayers,” Physical Review B, vol. 82, no. 5, 2010.
mla: Zdravkov, V. I., et al. “Reentrant Superconductivity in Superconductor/Ferromagnetic-Alloy
Bilayers.” Physical Review B, vol. 82, no. 5, 054517, American Physical
Society (APS), 2010, doi:10.1103/physrevb.82.054517.
short: V.I. Zdravkov, J. Kehrle, G. Obermeier, S. Gsell, M. Schreck, C. Müller,
H.-A. Krug von Nidda, J. Lindner, J. Moosburger-Will, E. Nold, R. Morari, V.V.
Ryazanov, A.S. Sidorenko, S. Horn, R. Tidecks, L.R. Tagirov, Physical Review B
82 (2010).
date_created: 2018-08-28T12:22:11Z
date_updated: 2022-01-06T07:00:34Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1103/physrevb.82.054517
extern: '1'
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:23:29Z
date_updated: 2018-08-28T12:23:29Z
file_id: '4201'
file_name: Reentrant superconductivity in superconductor-ferromagnetic-alloy bilayers.pdf
file_size: 723266
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:23:29Z
has_accepted_license: '1'
intvolume: ' 82'
issue: '5'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers
type: journal_article
user_id: '55706'
volume: 82
year: '2010'
...
---
_id: '4202'
abstract:
- lang: eng
text: "Unintentional doping in nonpolar a-plane \x01112¯0\x02 gallium nitride \x01GaN\x02
grown on r-plane \x0111¯02\x02\r\nsapphire using a three-dimensional \x013D\x02–two-dimensional
\x012D\x02 growth method has been\r\ncharacterized. For both 2D only and 3D–2D
growth, the presence of an unintentionally doped region\r\nadjacent to the GaN/sapphire
interface is observed by scanning capacitance microscopy \x01SCM\x02. The\r\naverage
width of this unintentionally doped layer is found to increase with increasing
3D growth\r\ntime. By using an intentionally doped GaN:Si staircase structure
for calibration, it is shown that the\r\nunintentionally doped region has an average
carrier concentration of \x012.5\x010.3\x02\x021018 cm−3. SCM\r\nalso reveals
the presence of unintentionally doped features extending at 60° from the GaN/sapphire\r\ninterface.
The observation of decreasing carrier concentration with distance from the GaN/sapphire\r\ninterface
along these features may suggest that the unintentional doping arises from oxygen\r\ndiffusion
from the sapphire substrate. Low temperature cathodoluminescence spectra reveal\r\nemission
peaks at 3.41 and 3.30 eV, which are believed to originate from basal plane stacking
faults\r\n\x01BSFs\x02 and prismatic stacking faults \x01PSFs\x02, respectively.
It is shown that the inclined features\r\nextending from the GaN/sapphire interface
exhibit both enhanced BSF and PSF emission. We\r\nsuggest that enhanced unintentional
doping occurs in regions around PSFs. Where BSFs intersect\r\nthis doped material
their emission is also enhanced due to reduced nonradiative recombination.\r\nTransmission
electron microscopy confirms the presence of PSFs extending through the film at
60°\r\nfrom the GaN/sapphire interface."
article_number: '023503'
article_type: original
author:
- first_name: Tongtong
full_name: Zhu, Tongtong
last_name: Zhu
- first_name: Carol F.
full_name: Johnston, Carol F.
last_name: Johnston
- first_name: Maik
full_name: Häberlen, Maik
last_name: Häberlen
- first_name: Menno J.
full_name: Kappers, Menno J.
last_name: Kappers
- first_name: Rachel A.
full_name: Oliver, Rachel A.
last_name: Oliver
citation:
ama: Zhu T, Johnston CF, Häberlen M, Kappers MJ, Oliver RA. Characterization of
unintentional doping in nonpolar GaN. Journal of Applied Physics. 2010;107(2).
doi:10.1063/1.3284944
apa: Zhu, T., Johnston, C. F., Häberlen, M., Kappers, M. J., & Oliver, R. A.
(2010). Characterization of unintentional doping in nonpolar GaN. Journal of
Applied Physics, 107(2). https://doi.org/10.1063/1.3284944
bibtex: '@article{Zhu_Johnston_Häberlen_Kappers_Oliver_2010, title={Characterization
of unintentional doping in nonpolar GaN}, volume={107}, DOI={10.1063/1.3284944},
number={2023503}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Zhu, Tongtong and Johnston, Carol F. and Häberlen, Maik and Kappers, Menno
J. and Oliver, Rachel A.}, year={2010} }'
chicago: Zhu, Tongtong, Carol F. Johnston, Maik Häberlen, Menno J. Kappers, and
Rachel A. Oliver. “Characterization of Unintentional Doping in Nonpolar GaN.”
Journal of Applied Physics 107, no. 2 (2010). https://doi.org/10.1063/1.3284944.
ieee: T. Zhu, C. F. Johnston, M. Häberlen, M. J. Kappers, and R. A. Oliver, “Characterization
of unintentional doping in nonpolar GaN,” Journal of Applied Physics, vol.
107, no. 2, 2010.
mla: Zhu, Tongtong, et al. “Characterization of Unintentional Doping in Nonpolar
GaN.” Journal of Applied Physics, vol. 107, no. 2, 023503, AIP Publishing,
2010, doi:10.1063/1.3284944.
short: T. Zhu, C.F. Johnston, M. Häberlen, M.J. Kappers, R.A. Oliver, Journal of
Applied Physics 107 (2010).
date_created: 2018-08-28T12:27:34Z
date_updated: 2022-01-06T07:00:34Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1063/1.3284944
extern: '1'
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:28:22Z
date_updated: 2018-08-28T12:28:22Z
file_id: '4203'
file_name: Characterization of unintentional doping in nonpolar GaN.pdf
file_size: 688753
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:28:22Z
has_accepted_license: '1'
intvolume: ' 107'
issue: '2'
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Characterization of unintentional doping in nonpolar GaN
type: journal_article
user_id: '55706'
volume: 107
year: '2010'
...
---
_id: '4204'
abstract:
- lang: eng
text: "A comparative theoretical investigation of carbon interstitials in silicon
is presented. Calculations using\r\nclassical potentials are compared to first-principles
density-functional theory calculations of the geometries,\r\nformation, and activation
energies of the carbon dumbbell interstitial, showing the importance of a quantummechanical\r\ndescription
of this system. In contrast to previous studies, the present first-principles
calculations of\r\nthe interstitial carbon migration path yield an activation
energy that excellently matches the experiment. The\r\nbond-centered interstitial
configuration shows a net magnetization of two electrons, illustrating the need
for\r\nspin-polarized calculations."
article_number: '094110'
article_type: original
author:
- first_name: F.
full_name: Zirkelbach, F.
last_name: Zirkelbach
- first_name: B.
full_name: Stritzker, B.
last_name: Stritzker
- first_name: K.
full_name: Nordlund, K.
last_name: Nordlund
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: W. G.
full_name: Schmidt, W. G.
last_name: Schmidt
- first_name: E.
full_name: Rauls, E.
last_name: Rauls
citation:
ama: Zirkelbach F, Stritzker B, Nordlund K, Lindner J, Schmidt WG, Rauls E. Defects
in carbon implanted silicon calculated by classical potentials and first-principles
methods. Physical Review B. 2010;82(9). doi:10.1103/physrevb.82.094110
apa: Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J., Schmidt, W. G., &
Rauls, E. (2010). Defects in carbon implanted silicon calculated by classical
potentials and first-principles methods. Physical Review B, 82(9).
https://doi.org/10.1103/physrevb.82.094110
bibtex: '@article{Zirkelbach_Stritzker_Nordlund_Lindner_Schmidt_Rauls_2010, title={Defects
in carbon implanted silicon calculated by classical potentials and first-principles
methods}, volume={82}, DOI={10.1103/physrevb.82.094110},
number={9094110}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Lindner,
Jörg and Schmidt, W. G. and Rauls, E.}, year={2010} }'
chicago: Zirkelbach, F., B. Stritzker, K. Nordlund, Jörg Lindner, W. G. Schmidt,
and E. Rauls. “Defects in Carbon Implanted Silicon Calculated by Classical Potentials
and First-Principles Methods.” Physical Review B 82, no. 9 (2010). https://doi.org/10.1103/physrevb.82.094110.
ieee: F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W. G. Schmidt, and E.
Rauls, “Defects in carbon implanted silicon calculated by classical potentials
and first-principles methods,” Physical Review B, vol. 82, no. 9, 2010.
mla: Zirkelbach, F., et al. “Defects in Carbon Implanted Silicon Calculated by Classical
Potentials and First-Principles Methods.” Physical Review B, vol. 82, no.
9, 094110, American Physical Society (APS), 2010, doi:10.1103/physrevb.82.094110.
short: F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W.G. Schmidt, E. Rauls,
Physical Review B 82 (2010).
date_created: 2018-08-28T12:30:15Z
date_updated: 2022-01-06T07:00:35Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1103/physrevb.82.094110
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:31:01Z
date_updated: 2018-08-28T12:31:01Z
file_id: '4205'
file_name: Defects in Carbon implanted Silicon calculated by classical potentials
and first principles methods.pdf
file_size: 238023
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:31:01Z
has_accepted_license: '1'
intvolume: ' 82'
issue: '9'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Defects in carbon implanted silicon calculated by classical potentials and
first-principles methods
type: journal_article
user_id: '55706'
volume: 82
year: '2010'
...
---
_id: '4206'
author:
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Lindner J. Advanced topics and applications of Transmission Electron Microscopy,
Part I-II. In: ; 2010.'
apa: Lindner, J. (2010). Advanced topics and applications of Transmission Electron
Microscopy, Part I-II. Presented at the Guest Lectures at Departamento de Fisica
Applicada, Master de Materiales Avanzados y Nanotecnologias , Universidad Autónoma
de Madrid (Spain).
bibtex: '@inproceedings{Lindner_2010, title={Advanced topics and applications of
Transmission Electron Microscopy, Part I-II}, author={Lindner, Jörg}, year={2010}
}'
chicago: Lindner, Jörg. “Advanced Topics and Applications of Transmission Electron
Microscopy, Part I-II,” 2010.
ieee: J. Lindner, “Advanced topics and applications of Transmission Electron Microscopy,
Part I-II,” presented at the Guest Lectures at Departamento de Fisica Applicada,
Master de Materiales Avanzados y Nanotecnologias , Universidad Autónoma de Madrid
(Spain), 2010.
mla: Lindner, Jörg. Advanced Topics and Applications of Transmission Electron
Microscopy, Part I-II. 2010.
short: 'J. Lindner, in: 2010.'
conference:
end_date: 2010-04-16
location: Universidad Autónoma de Madrid (Spain)
name: 'Guest Lectures at Departamento de Fisica Applicada, Master de Materiales
Avanzados y Nanotecnologias '
start_date: 2010-04-14
date_created: 2018-08-28T12:34:11Z
date_updated: 2022-01-06T07:00:35Z
department:
- _id: '15'
- _id: '286'
status: public
title: Advanced topics and applications of Transmission Electron Microscopy, Part
I-II
type: conference_abstract
user_id: '55706'
year: '2010'
...
---
_id: '4207'
citation:
ama: Ila D, Kishimoto N, Lindner J, Baglin J, eds. Ion Beams and Nano-Engineering.
Vol 1181. MRS Symposium Proceedings ; 2010.
apa: 'Ila, D., Kishimoto, N., Lindner, J., & Baglin, J. (Eds.). (2010). Ion
Beams and Nano-Engineering (Vol. 1181). Presented at the MRS Spring Meeting
2009, San Francisco (USA): MRS Symposium Proceedings .'
bibtex: '@book{Ila_Kishimoto_Lindner_Baglin_2010, title={Ion Beams and Nano-Engineering},
volume={1181}, publisher={MRS Symposium Proceedings }, year={2010} }'
chicago: Ila, D., N. Kishimoto, Jörg Lindner, and J. Baglin, eds. Ion Beams
and Nano-Engineering. Vol. 1181. MRS Symposium Proceedings , 2010.
ieee: D. Ila, N. Kishimoto, J. Lindner, and J. Baglin, Eds., Ion Beams and Nano-Engineering,
vol. 1181. MRS Symposium Proceedings , 2010.
mla: Ila, D., et al., editors. Ion Beams and Nano-Engineering. Vol. 1181,
MRS Symposium Proceedings , 2010.
short: D. Ila, N. Kishimoto, J. Lindner, J. Baglin, eds., Ion Beams and Nano-Engineering,
MRS Symposium Proceedings , 2010.
conference:
location: San Francisco (USA)
name: MRS Spring Meeting 2009
date_created: 2018-08-28T12:38:16Z
date_updated: 2022-01-06T07:00:35Z
department:
- _id: '15'
- _id: '286'
editor:
- first_name: D.
full_name: Ila, D.
last_name: Ila
- first_name: 'N. '
full_name: 'Kishimoto, N. '
last_name: Kishimoto
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: J.
full_name: Baglin, J.
last_name: Baglin
intvolume: ' 1181'
language:
- iso: eng
publication_identifier:
isbn:
- 978-1-60511-154-4
publication_status: published
publisher: 'MRS Symposium Proceedings '
status: public
title: Ion Beams and Nano-Engineering
type: book_editor
user_id: '55706'
volume: 1181
year: '2010'
...
---
_id: '4208'
abstract:
- lang: eng
text: Growth of GaN on Si(111) potentially enables cost efficient manufacturing
of optoelectronic devices due to the possibility of using cheap large area substrates.
However, GaN layers grown on Si(111) substrates suffer from high tensile stress
that can lead to cracking at layer thicknesses exceeding 1 μm. Another challenge
is the high dislocation density of GaN layers grown on Si(111) which is detrimental
to device performance. In this paper we show that a step graded AlGaN buffer layer
can compensate tensile stress, avoiding cracking, and at the same time reduce
the dislocation density. An additional SiNx interlayer in the GaN layer is shown
to further reduce the dislocation density down to the high 108 /cm². Weak beam
dark field TEM was used to study the dislocation reduction in cross sectional
samples and for comparison of the step graded AlGaN buffer layer structure to
a continuously graded one. STEM ADF was used to determine the exact location of
dislocation bending with respect to the position of the interface.
article_number: '012017'
article_type: original
author:
- first_name: M
full_name: Häberlen, M
last_name: Häberlen
- first_name: D
full_name: Zhu, D
last_name: Zhu
- first_name: C
full_name: McAleese, C
last_name: McAleese
- first_name: M J
full_name: Kappers, M J
last_name: Kappers
- first_name: C J
full_name: Humphreys, C J
last_name: Humphreys
citation:
ama: 'Häberlen M, Zhu D, McAleese C, Kappers MJ, Humphreys CJ. Dislocation reduction
in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers. Journal of
Physics: Conference Series. 2010;209. doi:10.1088/1742-6596/209/1/012017'
apa: 'Häberlen, M., Zhu, D., McAleese, C., Kappers, M. J., & Humphreys, C. J.
(2010). Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand
AlGaN layers. Journal of Physics: Conference Series, 209. https://doi.org/10.1088/1742-6596/209/1/012017'
bibtex: '@article{Häberlen_Zhu_McAleese_Kappers_Humphreys_2010, title={Dislocation
reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers}, volume={209},
DOI={10.1088/1742-6596/209/1/012017},
number={012017}, journal={Journal of Physics: Conference Series}, publisher={IOP
Publishing}, author={Häberlen, M and Zhu, D and McAleese, C and Kappers, M J and
Humphreys, C J}, year={2010} }'
chicago: 'Häberlen, M, D Zhu, C McAleese, M J Kappers, and C J Humphreys. “Dislocation
Reduction in MOVPE Grown GaN Layers on (111)Si Using SiNxand AlGaN Layers.” Journal
of Physics: Conference Series 209 (2010). https://doi.org/10.1088/1742-6596/209/1/012017.'
ieee: 'M. Häberlen, D. Zhu, C. McAleese, M. J. Kappers, and C. J. Humphreys, “Dislocation
reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers,” Journal
of Physics: Conference Series, vol. 209, 2010.'
mla: 'Häberlen, M., et al. “Dislocation Reduction in MOVPE Grown GaN Layers on (111)Si
Using SiNxand AlGaN Layers.” Journal of Physics: Conference Series, vol.
209, 012017, IOP Publishing, 2010, doi:10.1088/1742-6596/209/1/012017.'
short: 'M. Häberlen, D. Zhu, C. McAleese, M.J. Kappers, C.J. Humphreys, Journal
of Physics: Conference Series 209 (2010).'
date_created: 2018-08-28T12:39:31Z
date_updated: 2022-01-06T07:00:36Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1088/1742-6596/209/1/012017
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:40:20Z
date_updated: 2018-08-28T12:40:20Z
file_id: '4209'
file_name: Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNx
and AlGaN layers.pdf
file_size: 13011359
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:40:20Z
has_accepted_license: '1'
intvolume: ' 209'
language:
- iso: eng
publication: 'Journal of Physics: Conference Series'
publication_identifier:
issn:
- 1742-6596
publication_status: published
publisher: IOP Publishing
status: public
title: Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN
layers
type: journal_article
user_id: '55706'
volume: 209
year: '2010'
...
---
_id: '4210'
abstract:
- lang: eng
text: "In this paper we demonstrate a strain-driven GaN interlayer method to reduce
dislocation densities in GaN grown on (111) oriented silicon by metal organic
vapour phase epitaxy (MOVPE). In order to achieve crack-free GaN layers of\r\nreasonable
thicknesses and dislocation densities it is crucial to integrate both dislocation
reduction and strain management layers. In contrast to techniques like FACELO
or nanoELO we show the in situ formation of GaN islands directly on the AlN nucleation
layer without the need to deposit a SiO2 or SiNx mask. A graded AlGaN layer for
strain management can be grown on top of this dislocation reducing 3D GaN inter-layer
in order to achieve crack-free GaN layers grown on top of the AlGaN strain management
layer. Furthermore, an additional SiNx layer for subsequent dislocation reduction
can also be incorporated into the structure and is shown to efficiently reduce
the dislocation density down to the low 10^9 cm^2. The structural properties of
the 3D GaN island buffer layer and overgrown\r\nsamples are studied by means of
SEM, cross-sectional, and plan view TEM. Cathodoluminiscence in an SEM is employed
to correlate the dislocation microstructure as observed by plan view TEM with
luminescent properties."
article_type: original
author:
- first_name: Maik
full_name: Häberlen, Maik
last_name: Häberlen
- first_name: Dandan
full_name: Zhu, Dandan
last_name: Zhu
- first_name: Clifford
full_name: McAleese, Clifford
last_name: McAleese
- first_name: Tongtong
full_name: Zhu, Tongtong
last_name: Zhu
- first_name: Menno J.
full_name: Kappers, Menno J.
last_name: Kappers
- first_name: Colin J.
full_name: Humphreys, Colin J.
last_name: Humphreys
citation:
ama: Häberlen M, Zhu D, McAleese C, Zhu T, Kappers MJ, Humphreys CJ. Dislocation
reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer. physica
status solidi (b). 2010;247(7):1753-1756. doi:10.1002/pssb.200983537
apa: Häberlen, M., Zhu, D., McAleese, C., Zhu, T., Kappers, M. J., & Humphreys,
C. J. (2010). Dislocation reduction in GaN grown on Si(111) using a strain-driven
3D GaN interlayer. Physica Status Solidi (B), 247(7), 1753–1756.
https://doi.org/10.1002/pssb.200983537
bibtex: '@article{Häberlen_Zhu_McAleese_Zhu_Kappers_Humphreys_2010, title={Dislocation
reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer}, volume={247},
DOI={10.1002/pssb.200983537},
number={7}, journal={physica status solidi (b)}, publisher={Wiley}, author={Häberlen,
Maik and Zhu, Dandan and McAleese, Clifford and Zhu, Tongtong and Kappers, Menno
J. and Humphreys, Colin J.}, year={2010}, pages={1753–1756} }'
chicago: 'Häberlen, Maik, Dandan Zhu, Clifford McAleese, Tongtong Zhu, Menno J.
Kappers, and Colin J. Humphreys. “Dislocation Reduction in GaN Grown on Si(111)
Using a Strain-Driven 3D GaN Interlayer.” Physica Status Solidi (B) 247,
no. 7 (2010): 1753–56. https://doi.org/10.1002/pssb.200983537.'
ieee: M. Häberlen, D. Zhu, C. McAleese, T. Zhu, M. J. Kappers, and C. J. Humphreys,
“Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer,”
physica status solidi (b), vol. 247, no. 7, pp. 1753–1756, 2010.
mla: Häberlen, Maik, et al. “Dislocation Reduction in GaN Grown on Si(111) Using
a Strain-Driven 3D GaN Interlayer.” Physica Status Solidi (B), vol. 247,
no. 7, Wiley, 2010, pp. 1753–56, doi:10.1002/pssb.200983537.
short: M. Häberlen, D. Zhu, C. McAleese, T. Zhu, M.J. Kappers, C.J. Humphreys, Physica
Status Solidi (B) 247 (2010) 1753–1756.
date_created: 2018-08-28T12:42:58Z
date_updated: 2022-01-06T07:00:36Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1002/pssb.200983537
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:43:31Z
date_updated: 2018-08-28T12:43:31Z
file_id: '4211'
file_name: Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D
GaN interlayer.pdf
file_size: 911931
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:43:31Z
has_accepted_license: '1'
intvolume: ' 247'
issue: '7'
language:
- iso: eng
page: 1753-1756
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
- 1521-3951
publication_status: published
publisher: Wiley
status: public
title: Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN
interlayer
type: journal_article
user_id: '55706'
volume: 247
year: '2010'
...
---
_id: '4212'
abstract:
- lang: eng
text: "Low temperature cathodo- and photoluminescence has been performed on nonpolar
a-plane GaN films grown using epitaxial lateral overgrowth. In films overgrown
at a low V–III ratio, the emission spectrum is dominated by “yellow” and “blue”
luminescence bands, attributed to recombination at point defects or impurities.
The intensity of this emission is observed to decrease steadily across the window
region along the −c direction, possibly due to asymmetric diffusion of a point
defect/impurity species. When overgrown at a higher V–III ratio, the near band
edge and basal-plane stacking fault emission intensity increases by orders of
magnitude and a donor–acceptor pair band is observed. Using monochromatic cathodoluminescence
imaging, the various emission features are correlated with the microstructure
of the film. In particular, the peak energy of the basal-plane stacking fault
emission is seen to be blueshifted by \x0415 meV in the wing relative to the window
region, which may be related to the different strain states in the respective
regions."
article_number: '033523'
article_type: original
author:
- first_name: M.
full_name: Häberlen, M.
last_name: Häberlen
- first_name: T. J.
full_name: Badcock, T. J.
last_name: Badcock
- first_name: M. A.
full_name: Moram, M. A.
last_name: Moram
- first_name: J. L.
full_name: Hollander, J. L.
last_name: Hollander
- first_name: M. J.
full_name: Kappers, M. J.
last_name: Kappers
- first_name: P.
full_name: Dawson, P.
last_name: Dawson
- first_name: C. J.
full_name: Humphreys, C. J.
last_name: Humphreys
- first_name: R. A.
full_name: Oliver, R. A.
last_name: Oliver
citation:
ama: Häberlen M, Badcock TJ, Moram MA, et al. Low temperature photoluminescence
and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral
overgrowth. Journal of Applied Physics. 2010;108(3). doi:10.1063/1.3460641
apa: Häberlen, M., Badcock, T. J., Moram, M. A., Hollander, J. L., Kappers, M. J.,
Dawson, P., … Oliver, R. A. (2010). Low temperature photoluminescence and cathodoluminescence
studies of nonpolar GaN grown using epitaxial lateral overgrowth. Journal of
Applied Physics, 108(3). https://doi.org/10.1063/1.3460641
bibtex: '@article{Häberlen_Badcock_Moram_Hollander_Kappers_Dawson_Humphreys_Oliver_2010,
title={Low temperature photoluminescence and cathodoluminescence studies of nonpolar
GaN grown using epitaxial lateral overgrowth}, volume={108}, DOI={10.1063/1.3460641},
number={3033523}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Häberlen, M. and Badcock, T. J. and Moram, M. A. and Hollander, J. L.
and Kappers, M. J. and Dawson, P. and Humphreys, C. J. and Oliver, R. A.}, year={2010}
}'
chicago: Häberlen, M., T. J. Badcock, M. A. Moram, J. L. Hollander, M. J. Kappers,
P. Dawson, C. J. Humphreys, and R. A. Oliver. “Low Temperature Photoluminescence
and Cathodoluminescence Studies of Nonpolar GaN Grown Using Epitaxial Lateral
Overgrowth.” Journal of Applied Physics 108, no. 3 (2010). https://doi.org/10.1063/1.3460641.
ieee: M. Häberlen et al., “Low temperature photoluminescence and cathodoluminescence
studies of nonpolar GaN grown using epitaxial lateral overgrowth,” Journal
of Applied Physics, vol. 108, no. 3, 2010.
mla: Häberlen, M., et al. “Low Temperature Photoluminescence and Cathodoluminescence
Studies of Nonpolar GaN Grown Using Epitaxial Lateral Overgrowth.” Journal
of Applied Physics, vol. 108, no. 3, 033523, AIP Publishing, 2010, doi:10.1063/1.3460641.
short: M. Häberlen, T.J. Badcock, M.A. Moram, J.L. Hollander, M.J. Kappers, P. Dawson,
C.J. Humphreys, R.A. Oliver, Journal of Applied Physics 108 (2010).
date_created: 2018-08-28T12:46:49Z
date_updated: 2022-01-06T07:00:37Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1063/1.3460641
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:47:23Z
date_updated: 2018-08-28T12:47:23Z
file_id: '4213'
file_name: Low temperature photoluminescence and cathodoluminescence studies of
non-polar GaN grown using epitaxial lateral overgrowth.pdf
file_size: 2391054
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:47:23Z
has_accepted_license: '1'
intvolume: ' 108'
issue: '3'
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Low temperature photoluminescence and cathodoluminescence studies of nonpolar
GaN grown using epitaxial lateral overgrowth
type: journal_article
user_id: '55706'
volume: 108
year: '2010'
...
---
_id: '4214'
abstract:
- lang: eng
text: "Non-polar a -plane (1 1 2 ̄ 0) GaN films were grown on r-plane sapphire by
metal–organic vapor phase epitaxy and were subsequently annealed for 90 min at
1070°C. Most dislocations were partial\r\ndislocations, which terminated basal
plane stacking faults. Prior to annealing, these dislocations were\r\nrandomly
distributed. After annealing, these dislocations moved into arrays oriented along
the [0 0 0 1]\r\ndirection and aligned perpendicular to the film–substrate interface
throughout their length, although\r\nthe total dislocation density remained unchanged.
These changes were accompanied by broadening of\r\nthe symmetric X-ray diffraction
1 1 2 ̄ 0 w-scan widths. The mechanism of movement was identified as\r\ndislocation
glide, occurring due to highly anisotropic stresses (confirmed by X-ray diffraction
lattice\r\nparameter measurements) and evidenced by macroscopic slip bands observed
on the sample surface.\r\nThere was also an increase in the density of unintentionally
n-type doped electrically conductive\r\ninclined features present at the film–substrate
interface (as observed in cross-section using scanning\r\ncapacitance microscopy),
suggesting out-diffusion of impurities from the substrate along with prismatic\r\nstacking
faults. These data suggest that annealing processes performed close to film growth\r\ntemperatures
can affect both the microstructure and the electrical properties of non-polar
GaN films."
article_type: original
author:
- first_name: Rui
full_name: Hao, Rui
last_name: Hao
- first_name: T.
full_name: Zhu, T.
last_name: Zhu
- first_name: M.
full_name: Häberlen, M.
last_name: Häberlen
- first_name: T.Y.
full_name: Chang, T.Y.
last_name: Chang
- first_name: M.J.
full_name: Kappers, M.J.
last_name: Kappers
- first_name: R.A.
full_name: Oliver, R.A.
last_name: Oliver
- first_name: C.J.
full_name: Humphreys, C.J.
last_name: Humphreys
- first_name: M.A.
full_name: Moram, M.A.
last_name: Moram
citation:
ama: Hao R, Zhu T, Häberlen M, et al. The effects of annealing on non-polar (112¯0)
a-plane GaN films. Journal of Crystal Growth. 2010;312(23):3536-3543. doi:10.1016/j.jcrysgro.2010.08.041
apa: Hao, R., Zhu, T., Häberlen, M., Chang, T. Y., Kappers, M. J., Oliver, R. A.,
… Moram, M. A. (2010). The effects of annealing on non-polar (112¯0) a-plane GaN
films. Journal of Crystal Growth, 312(23), 3536–3543. https://doi.org/10.1016/j.jcrysgro.2010.08.041
bibtex: '@article{Hao_Zhu_Häberlen_Chang_Kappers_Oliver_Humphreys_Moram_2010, title={The
effects of annealing on non-polar (112¯0) a-plane GaN films}, volume={312}, DOI={10.1016/j.jcrysgro.2010.08.041},
number={23}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Hao,
Rui and Zhu, T. and Häberlen, M. and Chang, T.Y. and Kappers, M.J. and Oliver,
R.A. and Humphreys, C.J. and Moram, M.A.}, year={2010}, pages={3536–3543} }'
chicago: 'Hao, Rui, T. Zhu, M. Häberlen, T.Y. Chang, M.J. Kappers, R.A. Oliver,
C.J. Humphreys, and M.A. Moram. “The Effects of Annealing on Non-Polar (112¯0)
a-Plane GaN Films.” Journal of Crystal Growth 312, no. 23 (2010): 3536–43.
https://doi.org/10.1016/j.jcrysgro.2010.08.041.'
ieee: R. Hao et al., “The effects of annealing on non-polar (112¯0) a-plane
GaN films,” Journal of Crystal Growth, vol. 312, no. 23, pp. 3536–3543,
2010.
mla: Hao, Rui, et al. “The Effects of Annealing on Non-Polar (112¯0) a-Plane GaN
Films.” Journal of Crystal Growth, vol. 312, no. 23, Elsevier BV, 2010,
pp. 3536–43, doi:10.1016/j.jcrysgro.2010.08.041.
short: R. Hao, T. Zhu, M. Häberlen, T.Y. Chang, M.J. Kappers, R.A. Oliver, C.J.
Humphreys, M.A. Moram, Journal of Crystal Growth 312 (2010) 3536–3543.
date_created: 2018-08-28T12:49:39Z
date_updated: 2022-01-06T07:00:37Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1016/j.jcrysgro.2010.08.041
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:50:07Z
date_updated: 2018-08-28T12:50:07Z
file_id: '4215'
file_name: The effects of annealing on non-polar (11-20) a-plane GaN films.pdf
file_size: 1218752
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:50:07Z
has_accepted_license: '1'
intvolume: ' 312'
issue: '23'
language:
- iso: eng
page: 3536-3543
publication: Journal of Crystal Growth
publication_identifier:
issn:
- 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: The effects of annealing on non-polar (112¯0) a-plane GaN films
type: journal_article
user_id: '55706'
volume: 312
year: '2010'
...
---
_id: '4216'
abstract:
- lang: eng
text: "In non-annealed 6H-SiC samples that were electron irradiated at room temperature,
a new\r\nEPR signal due to a S=1 defect center with exceptionally large zero-field
splitting (D = +652·10-4\r\ncm-1) has been observed under illumination. A positive
sign of D demonstrates that the spin-orbit\r\ncontribution to the zero-field splitting
exceeds by far that of the spin-spin interaction. A principal\r\naxis of the fine
structure tilted by 59° against the crystal c-axis as well as the exceptionally
high\r\nzero-field splitting D can be qualitatively understood by the occurrence
of additional close-lying\r\ndefect levels in defect clusters resulting in comparatively
large second-order spin-orbit coupling. A\r\ntentative assignment to vacancy clusters
is supported by the observed annealing behavior."
article_type: original
author:
- first_name: Andreas
full_name: Scholle, Andreas
last_name: Scholle
- first_name: Siegmund
full_name: Greulich-Weber, Siegmund
last_name: Greulich-Weber
- first_name: Eva
full_name: Rauls, Eva
last_name: Rauls
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
last_name: Schmidt
- first_name: Uwe
full_name: Gerstmann, Uwe
last_name: Gerstmann
citation:
ama: Scholle A, Greulich-Weber S, Rauls E, Schmidt WG, Gerstmann U. Fine Structure
of Triplet Centers in Room Temperature Irradiated 6H-SiC. Materials Science
Forum. 2010;645-648:403-406. doi:10.4028/www.scientific.net/msf.645-648.403
apa: Scholle, A., Greulich-Weber, S., Rauls, E., Schmidt, W. G., & Gerstmann,
U. (2010). Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC.
Materials Science Forum, 645–648, 403–406. https://doi.org/10.4028/www.scientific.net/msf.645-648.403
bibtex: '@article{Scholle_Greulich-Weber_Rauls_Schmidt_Gerstmann_2010, title={Fine
Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC}, volume={645–648},
DOI={10.4028/www.scientific.net/msf.645-648.403},
journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Scholle,
Andreas and Greulich-Weber, Siegmund and Rauls, Eva and Schmidt, Wolf Gero and
Gerstmann, Uwe}, year={2010}, pages={403–406} }'
chicago: 'Scholle, Andreas, Siegmund Greulich-Weber, Eva Rauls, Wolf Gero Schmidt,
and Uwe Gerstmann. “Fine Structure of Triplet Centers in Room Temperature Irradiated
6H-SiC.” Materials Science Forum 645–648 (2010): 403–6. https://doi.org/10.4028/www.scientific.net/msf.645-648.403.'
ieee: A. Scholle, S. Greulich-Weber, E. Rauls, W. G. Schmidt, and U. Gerstmann,
“Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC,” Materials
Science Forum, vol. 645–648, pp. 403–406, 2010.
mla: Scholle, Andreas, et al. “Fine Structure of Triplet Centers in Room Temperature
Irradiated 6H-SiC.” Materials Science Forum, vol. 645–648, Trans Tech Publications,
2010, pp. 403–06, doi:10.4028/www.scientific.net/msf.645-648.403.
short: A. Scholle, S. Greulich-Weber, E. Rauls, W.G. Schmidt, U. Gerstmann, Materials
Science Forum 645–648 (2010) 403–406.
date_created: 2018-08-28T12:53:50Z
date_updated: 2022-01-06T07:00:38Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.4028/www.scientific.net/msf.645-648.403
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:54:26Z
date_updated: 2018-08-28T12:54:26Z
file_id: '4217'
file_name: Fine structure of triplet centers in room temperature irradiated 6H-SiC.pdf
file_size: 583484
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:54:26Z
has_accepted_license: '1'
language:
- iso: eng
page: 403-406
publication: Materials Science Forum
publication_identifier:
issn:
- 1662-9752
publication_status: published
publisher: Trans Tech Publications
status: public
title: Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC
type: journal_article
user_id: '55706'
volume: 645-648
year: '2010'
...
---
_id: '6619'
abstract:
- lang: ger
text: Strömungsbasierte Mischprozesse sind grundlegender Bestandteil vieler chemischer
Prozesse. Realisierbare Mischzeiten reichen von einigen Millisekunden bis zu Sekunden,
wobei die vollständige Homogenisierung oft nicht sichergestellt ist. Werden kinetische
Parameter chemischer Reaktionen dieses Zeitskalenbereichs ohne Berücksichtigung
der Mischprozesse bestimmt, sind sie mischungsmaskiert und geben die inhärente
chemische Kinetik nicht wieder. In dieser Arbeit wird die Validierung und Anwendung
einer Methode zur Bestimmung inhärenter chemischer Kinetiken von in Flüssigphase
ablaufenden chemischen Reaktionen im stationären, laminaren Flachbettmikroreaktor
vorgestellt. Der verfolgte Ansatz basiert auf der mechanistischen Modellierung
der Molmengen unter Berücksichtigung von Konvektion, Diffusion und Reaktion und
der Bestimmung der unbekannten Parameter durch Anpassung des Modells an experimentell
ermittelte Konzentrationsverläufe.
article_type: original
author:
- first_name: H.-J.
full_name: Warnecke, H.-J.
last_name: Warnecke
- first_name: D.
full_name: Bothe, D.
last_name: Bothe
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: Gerhard
full_name: Berth, Gerhard
id: '53'
last_name: Berth
- first_name: K.-P.
full_name: Hüsch, K.-P.
last_name: Hüsch
citation:
ama: Warnecke H-J, Bothe D, Zrenner A, Berth G, Hüsch K-P. Modellbasierte Bestimmung
lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*.
Chemie Ingenieur Technik. 2010;82(3):251-258. doi:10.1002/cite.200900169
apa: Warnecke, H.-J., Bothe, D., Zrenner, A., Berth, G., & Hüsch, K.-P. (2010).
Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase
mittels Flachbettmikroreaktor*. Chemie Ingenieur Technik, 82(3),
251–258. https://doi.org/10.1002/cite.200900169
bibtex: '@article{Warnecke_Bothe_Zrenner_Berth_Hüsch_2010, title={Modellbasierte
Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels
Flachbettmikroreaktor*}, volume={82}, DOI={10.1002/cite.200900169},
number={3}, journal={Chemie Ingenieur Technik}, publisher={Wiley}, author={Warnecke,
H.-J. and Bothe, D. and Zrenner, Artur and Berth, Gerhard and Hüsch, K.-P.}, year={2010},
pages={251–258} }'
chicago: 'Warnecke, H.-J., D. Bothe, Artur Zrenner, Gerhard Berth, and K.-P. Hüsch.
“Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase
mittels Flachbettmikroreaktor*.” Chemie Ingenieur Technik 82, no. 3 (2010):
251–58. https://doi.org/10.1002/cite.200900169.'
ieee: H.-J. Warnecke, D. Bothe, A. Zrenner, G. Berth, and K.-P. Hüsch, “Modellbasierte
Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels
Flachbettmikroreaktor*,” Chemie Ingenieur Technik, vol. 82, no. 3, pp.
251–258, 2010.
mla: Warnecke, H. J., et al. “Modellbasierte Bestimmung lokal gültiger Kinetiken
chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*.” Chemie
Ingenieur Technik, vol. 82, no. 3, Wiley, 2010, pp. 251–58, doi:10.1002/cite.200900169.
short: H.-J. Warnecke, D. Bothe, A. Zrenner, G. Berth, K.-P. Hüsch, Chemie Ingenieur
Technik 82 (2010) 251–258.
date_created: 2019-01-10T10:13:09Z
date_updated: 2022-01-06T07:03:13Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1002/cite.200900169
intvolume: ' 82'
issue: '3'
language:
- iso: ger
page: 251-258
publication: Chemie Ingenieur Technik
publication_identifier:
issn:
- 0009-286X
- 1522-2640
publication_status: published
publisher: Wiley
status: public
title: Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in
Flüssigphase mittels Flachbettmikroreaktor*
type: journal_article
user_id: '49428'
volume: 82
year: '2010'
...
---
_id: '7993'
author:
- first_name: Karoline A.
full_name: Piegdon, Karoline A.
last_name: Piegdon
- first_name: Matthias
full_name: Offer, Matthias
last_name: Offer
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
- first_name: Martin
full_name: Urbanski, Martin
last_name: Urbanski
- first_name: Andreas
full_name: Hoischen, Andreas
last_name: Hoischen
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
- first_name: Stefan
full_name: Declair, Stefan
last_name: Declair
- first_name: Jens
full_name: Förstner, Jens
last_name: Förstner
- first_name: Torsten
full_name: Meier, Torsten
last_name: Meier
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Cedrik
full_name: Meier, Cedrik
last_name: Meier
citation:
ama: 'Piegdon KA, Offer M, Lorke A, et al. Self-assembled quantum dots in a liquid-crystal-tunable
microdisk resonator. Physica E: Low-dimensional Systems and Nanostructures.
2010;42(10):2552-2555. doi:10.1016/j.physe.2009.12.051'
apa: 'Piegdon, K. A., Offer, M., Lorke, A., Urbanski, M., Hoischen, A., Kitzerow,
H.-S., Declair, S., Förstner, J., Meier, T., Reuter, D., Wieck, A. D., & Meier,
C. (2010). Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator.
Physica E: Low-Dimensional Systems and Nanostructures, 42(10), 2552–2555.
https://doi.org/10.1016/j.physe.2009.12.051'
bibtex: '@article{Piegdon_Offer_Lorke_Urbanski_Hoischen_Kitzerow_Declair_Förstner_Meier_Reuter_et
al._2010, title={Self-assembled quantum dots in a liquid-crystal-tunable microdisk
resonator}, volume={42}, DOI={10.1016/j.physe.2009.12.051},
number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures},
publisher={Elsevier BV}, author={Piegdon, Karoline A. and Offer, Matthias and
Lorke, Axel and Urbanski, Martin and Hoischen, Andreas and Kitzerow, Heinz-Siegfried
and Declair, Stefan and Förstner, Jens and Meier, Torsten and Reuter, Dirk and
et al.}, year={2010}, pages={2552–2555} }'
chicago: 'Piegdon, Karoline A., Matthias Offer, Axel Lorke, Martin Urbanski, Andreas
Hoischen, Heinz-Siegfried Kitzerow, Stefan Declair, et al. “Self-Assembled Quantum
Dots in a Liquid-Crystal-Tunable Microdisk Resonator.” Physica E: Low-Dimensional
Systems and Nanostructures 42, no. 10 (2010): 2552–55. https://doi.org/10.1016/j.physe.2009.12.051.'
ieee: 'K. A. Piegdon et al., “Self-assembled quantum dots in a liquid-crystal-tunable
microdisk resonator,” Physica E: Low-dimensional Systems and Nanostructures,
vol. 42, no. 10, pp. 2552–2555, 2010, doi: 10.1016/j.physe.2009.12.051.'
mla: 'Piegdon, Karoline A., et al. “Self-Assembled Quantum Dots in a Liquid-Crystal-Tunable
Microdisk Resonator.” Physica E: Low-Dimensional Systems and Nanostructures,
vol. 42, no. 10, Elsevier BV, 2010, pp. 2552–55, doi:10.1016/j.physe.2009.12.051.'
short: 'K.A. Piegdon, M. Offer, A. Lorke, M. Urbanski, A. Hoischen, H.-S. Kitzerow,
S. Declair, J. Förstner, T. Meier, D. Reuter, A.D. Wieck, C. Meier, Physica E:
Low-Dimensional Systems and Nanostructures 42 (2010) 2552–2555.'
date_created: 2019-02-21T14:43:30Z
date_updated: 2023-01-10T13:59:58Z
department:
- _id: '15'
- _id: '230'
- _id: '313'
doi: 10.1016/j.physe.2009.12.051
intvolume: ' 42'
issue: '10'
language:
- iso: eng
page: 2552-2555
publication: 'Physica E: Low-dimensional Systems and Nanostructures'
publication_identifier:
issn:
- 1386-9477
publication_status: published
publisher: Elsevier BV
status: public
title: Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator
type: journal_article
user_id: '254'
volume: 42
year: '2010'
...
---
_id: '40194'
article_number: '253603'
author:
- first_name: Kaisa
full_name: Laiho, Kaisa
last_name: Laiho
- first_name: Katiúscia N.
full_name: Cassemiro, Katiúscia N.
last_name: Cassemiro
- first_name: David
full_name: Gross, David
last_name: Gross
- first_name: Christine
full_name: Silberhorn, Christine
id: '26263'
last_name: Silberhorn
citation:
ama: Laiho K, Cassemiro KN, Gross D, Silberhorn C. Probing the Negative Wigner Function
of a Pulsed Single Photon Point by Point. Physical Review Letters. 2010;105(25).
doi:10.1103/physrevlett.105.253603
apa: Laiho, K., Cassemiro, K. N., Gross, D., & Silberhorn, C. (2010). Probing
the Negative Wigner Function of a Pulsed Single Photon Point by Point. Physical
Review Letters, 105(25), Article 253603. https://doi.org/10.1103/physrevlett.105.253603
bibtex: '@article{Laiho_Cassemiro_Gross_Silberhorn_2010, title={Probing the Negative
Wigner Function of a Pulsed Single Photon Point by Point}, volume={105}, DOI={10.1103/physrevlett.105.253603},
number={25253603}, journal={Physical Review Letters}, publisher={American Physical
Society (APS)}, author={Laiho, Kaisa and Cassemiro, Katiúscia N. and Gross, David
and Silberhorn, Christine}, year={2010} }'
chicago: Laiho, Kaisa, Katiúscia N. Cassemiro, David Gross, and Christine Silberhorn.
“Probing the Negative Wigner Function of a Pulsed Single Photon Point by Point.”
Physical Review Letters 105, no. 25 (2010). https://doi.org/10.1103/physrevlett.105.253603.
ieee: 'K. Laiho, K. N. Cassemiro, D. Gross, and C. Silberhorn, “Probing the Negative
Wigner Function of a Pulsed Single Photon Point by Point,” Physical Review
Letters, vol. 105, no. 25, Art. no. 253603, 2010, doi: 10.1103/physrevlett.105.253603.'
mla: Laiho, Kaisa, et al. “Probing the Negative Wigner Function of a Pulsed Single
Photon Point by Point.” Physical Review Letters, vol. 105, no. 25, 253603,
American Physical Society (APS), 2010, doi:10.1103/physrevlett.105.253603.
short: K. Laiho, K.N. Cassemiro, D. Gross, C. Silberhorn, Physical Review Letters
105 (2010).
date_created: 2023-01-26T08:28:09Z
date_updated: 2023-01-30T12:52:26Z
department:
- _id: '288'
- _id: '15'
doi: 10.1103/physrevlett.105.253603
intvolume: ' 105'
issue: '25'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Physical Review Letters
publication_identifier:
issn:
- 0031-9007
- 1079-7114
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Probing the Negative Wigner Function of a Pulsed Single Photon Point by Point
type: journal_article
user_id: '26263'
volume: 105
year: '2010'
...
---
_id: '40195'
article_number: '113052'
author:
- first_name: Katiúscia N
full_name: Cassemiro, Katiúscia N
last_name: Cassemiro
- first_name: Kaisa
full_name: Laiho, Kaisa
last_name: Laiho
- first_name: Christine
full_name: Silberhorn, Christine
id: '26263'
last_name: Silberhorn
citation:
ama: Cassemiro KN, Laiho K, Silberhorn C. Accessing the purity of a single photon
by the width of the Hong–Ou–Mandel interference. New Journal of Physics.
2010;12(11). doi:10.1088/1367-2630/12/11/113052
apa: Cassemiro, K. N., Laiho, K., & Silberhorn, C. (2010). Accessing the purity
of a single photon by the width of the Hong–Ou–Mandel interference. New Journal
of Physics, 12(11), Article 113052. https://doi.org/10.1088/1367-2630/12/11/113052
bibtex: '@article{Cassemiro_Laiho_Silberhorn_2010, title={Accessing the purity of
a single photon by the width of the Hong–Ou–Mandel interference}, volume={12},
DOI={10.1088/1367-2630/12/11/113052},
number={11113052}, journal={New Journal of Physics}, publisher={IOP Publishing},
author={Cassemiro, Katiúscia N and Laiho, Kaisa and Silberhorn, Christine}, year={2010}
}'
chicago: Cassemiro, Katiúscia N, Kaisa Laiho, and Christine Silberhorn. “Accessing
the Purity of a Single Photon by the Width of the Hong–Ou–Mandel Interference.”
New Journal of Physics 12, no. 11 (2010). https://doi.org/10.1088/1367-2630/12/11/113052.
ieee: 'K. N. Cassemiro, K. Laiho, and C. Silberhorn, “Accessing the purity of a
single photon by the width of the Hong–Ou–Mandel interference,” New Journal
of Physics, vol. 12, no. 11, Art. no. 113052, 2010, doi: 10.1088/1367-2630/12/11/113052.'
mla: Cassemiro, Katiúscia N., et al. “Accessing the Purity of a Single Photon by
the Width of the Hong–Ou–Mandel Interference.” New Journal of Physics,
vol. 12, no. 11, 113052, IOP Publishing, 2010, doi:10.1088/1367-2630/12/11/113052.
short: K.N. Cassemiro, K. Laiho, C. Silberhorn, New Journal of Physics 12 (2010).
date_created: 2023-01-26T08:29:50Z
date_updated: 2023-01-30T12:53:06Z
department:
- _id: '288'
- _id: '15'
doi: 10.1088/1367-2630/12/11/113052
intvolume: ' 12'
issue: '11'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: New Journal of Physics
publication_identifier:
issn:
- 1367-2630
publication_status: published
publisher: IOP Publishing
status: public
title: Accessing the purity of a single photon by the width of the Hong–Ou–Mandel
interference
type: journal_article
user_id: '26263'
volume: 12
year: '2010'
...
---
_id: '40206'
article_number: '050502'
author:
- first_name: A.
full_name: Schreiber, A.
last_name: Schreiber
- first_name: K. N.
full_name: Cassemiro, K. N.
last_name: Cassemiro
- first_name: V.
full_name: Potoček, V.
last_name: Potoček
- first_name: A.
full_name: Gábris, A.
last_name: Gábris
- first_name: P. J.
full_name: Mosley, P. J.
last_name: Mosley
- first_name: E.
full_name: Andersson, E.
last_name: Andersson
- first_name: I.
full_name: Jex, I.
last_name: Jex
- first_name: Christine
full_name: Silberhorn, Christine
id: '26263'
last_name: Silberhorn
citation:
ama: 'Schreiber A, Cassemiro KN, Potoček V, et al. Photons Walking the Line: A Quantum
Walk with Adjustable Coin Operations. Physical Review Letters. 2010;104(5).
doi:10.1103/physrevlett.104.050502'
apa: 'Schreiber, A., Cassemiro, K. N., Potoček, V., Gábris, A., Mosley, P. J., Andersson,
E., Jex, I., & Silberhorn, C. (2010). Photons Walking the Line: A Quantum
Walk with Adjustable Coin Operations. Physical Review Letters, 104(5),
Article 050502. https://doi.org/10.1103/physrevlett.104.050502'
bibtex: '@article{Schreiber_Cassemiro_Potoček_Gábris_Mosley_Andersson_Jex_Silberhorn_2010,
title={Photons Walking the Line: A Quantum Walk with Adjustable Coin Operations},
volume={104}, DOI={10.1103/physrevlett.104.050502},
number={5050502}, journal={Physical Review Letters}, publisher={American Physical
Society (APS)}, author={Schreiber, A. and Cassemiro, K. N. and Potoček, V. and
Gábris, A. and Mosley, P. J. and Andersson, E. and Jex, I. and Silberhorn, Christine},
year={2010} }'
chicago: 'Schreiber, A., K. N. Cassemiro, V. Potoček, A. Gábris, P. J. Mosley, E.
Andersson, I. Jex, and Christine Silberhorn. “Photons Walking the Line: A Quantum
Walk with Adjustable Coin Operations.” Physical Review Letters 104, no.
5 (2010). https://doi.org/10.1103/physrevlett.104.050502.'
ieee: 'A. Schreiber et al., “Photons Walking the Line: A Quantum Walk with
Adjustable Coin Operations,” Physical Review Letters, vol. 104, no. 5,
Art. no. 050502, 2010, doi: 10.1103/physrevlett.104.050502.'
mla: 'Schreiber, A., et al. “Photons Walking the Line: A Quantum Walk with Adjustable
Coin Operations.” Physical Review Letters, vol. 104, no. 5, 050502, American
Physical Society (APS), 2010, doi:10.1103/physrevlett.104.050502.'
short: A. Schreiber, K.N. Cassemiro, V. Potoček, A. Gábris, P.J. Mosley, E. Andersson,
I. Jex, C. Silberhorn, Physical Review Letters 104 (2010).
date_created: 2023-01-26T08:39:44Z
date_updated: 2023-01-30T12:56:01Z
department:
- _id: '288'
- _id: '15'
doi: 10.1103/physrevlett.104.050502
intvolume: ' 104'
issue: '5'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Physical Review Letters
publication_identifier:
issn:
- 0031-9007
- 1079-7114
publication_status: published
publisher: American Physical Society (APS)
status: public
title: 'Photons Walking the Line: A Quantum Walk with Adjustable Coin Operations'
type: journal_article
user_id: '26263'
volume: 104
year: '2010'
...
---
_id: '40204'
article_number: '063602'
author:
- first_name: M.
full_name: Avenhaus, M.
last_name: Avenhaus
- first_name: K.
full_name: Laiho, K.
last_name: Laiho
- first_name: M. V.
full_name: Chekhova, M. V.
last_name: Chekhova
- first_name: Christine
full_name: Silberhorn, Christine
id: '26263'
last_name: Silberhorn
citation:
ama: Avenhaus M, Laiho K, Chekhova MV, Silberhorn C. Accessing Higher Order Correlations
in Quantum Optical States by Time Multiplexing. Physical Review Letters.
2010;104(6). doi:10.1103/physrevlett.104.063602
apa: Avenhaus, M., Laiho, K., Chekhova, M. V., & Silberhorn, C. (2010). Accessing
Higher Order Correlations in Quantum Optical States by Time Multiplexing. Physical
Review Letters, 104(6), Article 063602. https://doi.org/10.1103/physrevlett.104.063602
bibtex: '@article{Avenhaus_Laiho_Chekhova_Silberhorn_2010, title={Accessing Higher
Order Correlations in Quantum Optical States by Time Multiplexing}, volume={104},
DOI={10.1103/physrevlett.104.063602},
number={6063602}, journal={Physical Review Letters}, publisher={American Physical
Society (APS)}, author={Avenhaus, M. and Laiho, K. and Chekhova, M. V. and Silberhorn,
Christine}, year={2010} }'
chicago: Avenhaus, M., K. Laiho, M. V. Chekhova, and Christine Silberhorn. “Accessing
Higher Order Correlations in Quantum Optical States by Time Multiplexing.” Physical
Review Letters 104, no. 6 (2010). https://doi.org/10.1103/physrevlett.104.063602.
ieee: 'M. Avenhaus, K. Laiho, M. V. Chekhova, and C. Silberhorn, “Accessing Higher
Order Correlations in Quantum Optical States by Time Multiplexing,” Physical
Review Letters, vol. 104, no. 6, Art. no. 063602, 2010, doi: 10.1103/physrevlett.104.063602.'
mla: Avenhaus, M., et al. “Accessing Higher Order Correlations in Quantum Optical
States by Time Multiplexing.” Physical Review Letters, vol. 104, no. 6,
063602, American Physical Society (APS), 2010, doi:10.1103/physrevlett.104.063602.
short: M. Avenhaus, K. Laiho, M.V. Chekhova, C. Silberhorn, Physical Review Letters
104 (2010).
date_created: 2023-01-26T08:37:32Z
date_updated: 2023-01-30T12:55:25Z
department:
- _id: '288'
- _id: '15'
doi: 10.1103/physrevlett.104.063602
intvolume: ' 104'
issue: '6'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Physical Review Letters
publication_identifier:
issn:
- 0031-9007
- 1079-7114
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Accessing Higher Order Correlations in Quantum Optical States by Time Multiplexing
type: journal_article
user_id: '26263'
volume: 104
year: '2010'
...