---
_id: '4548'
abstract:
- lang: eng
text: "A fluorescence study of acetonitrile solutions of bis(tetramethylguanidine)propane,
copper(I)-iodide and [Cu(btmgp)I] was performed and the chemical reaction of the
latter species with O2 was investigated at room temperature. The actual quenching
process via O2 gassing was studied and an exponential dependence of the fluorescence
intensity with respect to the complex concentration was observed.\r\nFurthermore
the survey was deepened on time resolved fluorescence properties of solved [Cu(btmgp)I]
in a wider concentration range. The applicability of this complex for O2 sensing
inside a microreactor system was proven by confocal fluorescence measurements.
It was shown that the investigated system can be used for oxygen sensing in the
copper concentration range from 10−2 to 10−9 mol/l."
article_type: original
author:
- first_name: Sonja
full_name: Herres-Pawlis, Sonja
last_name: Herres-Pawlis
- first_name: Gerhard
full_name: Berth, Gerhard
id: '53'
last_name: Berth
- first_name: Volker
full_name: Wiedemeier, Volker
last_name: Wiedemeier
- first_name: Ludger
full_name: Schmidt, Ludger
last_name: Schmidt
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: Hans-Joachim
full_name: Warnecke, Hans-Joachim
last_name: Warnecke
citation:
ama: Herres-Pawlis S, Berth G, Wiedemeier V, Schmidt L, Zrenner A, Warnecke H-J.
Oxygen sensing by fluorescence quenching of [Cu(btmgp)I]. Journal of Luminescence.
2010;130(10):1958-1962. doi:10.1016/j.jlumin.2010.05.012
apa: Herres-Pawlis, S., Berth, G., Wiedemeier, V., Schmidt, L., Zrenner, A., &
Warnecke, H.-J. (2010). Oxygen sensing by fluorescence quenching of [Cu(btmgp)I].
Journal of Luminescence, 130(10), 1958–1962. https://doi.org/10.1016/j.jlumin.2010.05.012
bibtex: '@article{Herres-Pawlis_Berth_Wiedemeier_Schmidt_Zrenner_Warnecke_2010,
title={Oxygen sensing by fluorescence quenching of [Cu(btmgp)I]}, volume={130},
DOI={10.1016/j.jlumin.2010.05.012},
number={10}, journal={Journal of Luminescence}, publisher={Elsevier BV}, author={Herres-Pawlis,
Sonja and Berth, Gerhard and Wiedemeier, Volker and Schmidt, Ludger and Zrenner,
Artur and Warnecke, Hans-Joachim}, year={2010}, pages={1958–1962} }'
chicago: 'Herres-Pawlis, Sonja, Gerhard Berth, Volker Wiedemeier, Ludger Schmidt,
Artur Zrenner, and Hans-Joachim Warnecke. “Oxygen Sensing by Fluorescence Quenching
of [Cu(Btmgp)I].” Journal of Luminescence 130, no. 10 (2010): 1958–62.
https://doi.org/10.1016/j.jlumin.2010.05.012.'
ieee: S. Herres-Pawlis, G. Berth, V. Wiedemeier, L. Schmidt, A. Zrenner, and H.-J.
Warnecke, “Oxygen sensing by fluorescence quenching of [Cu(btmgp)I],” Journal
of Luminescence, vol. 130, no. 10, pp. 1958–1962, 2010.
mla: Herres-Pawlis, Sonja, et al. “Oxygen Sensing by Fluorescence Quenching of [Cu(Btmgp)I].”
Journal of Luminescence, vol. 130, no. 10, Elsevier BV, 2010, pp. 1958–62,
doi:10.1016/j.jlumin.2010.05.012.
short: S. Herres-Pawlis, G. Berth, V. Wiedemeier, L. Schmidt, A. Zrenner, H.-J.
Warnecke, Journal of Luminescence 130 (2010) 1958–1962.
date_created: 2018-09-20T12:31:16Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1016/j.jlumin.2010.05.012
intvolume: ' 130'
issue: '10'
keyword:
- Copper Oxygen Fluorescence quenching N donor ligands
language:
- iso: eng
page: 1958-1962
publication: Journal of Luminescence
publication_identifier:
issn:
- 0022-2313
publication_status: published
publisher: Elsevier BV
status: public
title: Oxygen sensing by fluorescence quenching of [Cu(btmgp)I]
type: journal_article
user_id: '49428'
volume: 130
year: '2010'
...
---
_id: '4549'
abstract:
- lang: eng
text: Damage caused by laser irradiation on the surface of ZnTe epilayers was studied
by micro-Raman and atomic force microscopy (AFM). ZnTe LO-phonon overtones up
to four order and TO + (n − 1)LO zone-center phonons were observed in the resonant
micro-Raman spectra at room temperature. Discrepancies in the literature regarding
the origin of two features observed at low frequencies around 120 and 140 cm−1
in the Raman spectrum of ZnTe are discussed and resolved. These Raman peaks were
not detected by using a low excitation laser power density on a Zn-terminated
ZnTe surface; however, with the increase of the laser power density they were
found to arise irreversibly. The correspondence of these peaks in a wave number
with the strongest Raman peaks of the crystalline tellurium phase and the intensity
enhancement behavior with the laser power in a similar way as for CdTe strongly
suggests the formation of crystalline tellurium aggregates on the layer surface
due to laser irradiation damage. AFM data reveal the occurrence of laser ablation
on the ZnTe surface even though the surface temperature of the sample is below
the melting point.
article_number: '075003'
article_type: original
author:
- first_name: E M
full_name: Larramendi, E M
last_name: Larramendi
- first_name: Gerhard
full_name: Berth, Gerhard
id: '53'
last_name: Berth
- first_name: V
full_name: Wiedemeier, V
last_name: Wiedemeier
- first_name: K-P
full_name: Hüsch, K-P
last_name: Hüsch
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: U
full_name: Woggon, U
last_name: Woggon
- first_name: E
full_name: Tschumak, E
last_name: Tschumak
- first_name: K
full_name: Lischka, K
last_name: Lischka
- first_name: D
full_name: Schikora, D
last_name: Schikora
citation:
ama: Larramendi EM, Berth G, Wiedemeier V, et al. Intensity enhancement of Te Raman
modes by laser damage in ZnTe epilayers. Semiconductor Science and Technology.
2010;25(7). doi:10.1088/0268-1242/25/7/075003
apa: Larramendi, E. M., Berth, G., Wiedemeier, V., Hüsch, K.-P., Zrenner, A., Woggon,
U., … Schikora, D. (2010). Intensity enhancement of Te Raman modes by laser damage
in ZnTe epilayers. Semiconductor Science and Technology, 25(7).
https://doi.org/10.1088/0268-1242/25/7/075003
bibtex: '@article{Larramendi_Berth_Wiedemeier_Hüsch_Zrenner_Woggon_Tschumak_Lischka_Schikora_2010,
title={Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers},
volume={25}, DOI={10.1088/0268-1242/25/7/075003},
number={7075003}, journal={Semiconductor Science and Technology}, publisher={IOP
Publishing}, author={Larramendi, E M and Berth, Gerhard and Wiedemeier, V and
Hüsch, K-P and Zrenner, Artur and Woggon, U and Tschumak, E and Lischka, K and
Schikora, D}, year={2010} }'
chicago: Larramendi, E M, Gerhard Berth, V Wiedemeier, K-P Hüsch, Artur Zrenner,
U Woggon, E Tschumak, K Lischka, and D Schikora. “Intensity Enhancement of Te
Raman Modes by Laser Damage in ZnTe Epilayers.” Semiconductor Science and Technology
25, no. 7 (2010). https://doi.org/10.1088/0268-1242/25/7/075003.
ieee: E. M. Larramendi et al., “Intensity enhancement of Te Raman modes by
laser damage in ZnTe epilayers,” Semiconductor Science and Technology,
vol. 25, no. 7, 2010.
mla: Larramendi, E. M., et al. “Intensity Enhancement of Te Raman Modes by Laser
Damage in ZnTe Epilayers.” Semiconductor Science and Technology, vol. 25,
no. 7, 075003, IOP Publishing, 2010, doi:10.1088/0268-1242/25/7/075003.
short: E.M. Larramendi, G. Berth, V. Wiedemeier, K.-P. Hüsch, A. Zrenner, U. Woggon,
E. Tschumak, K. Lischka, D. Schikora, Semiconductor Science and Technology 25
(2010).
date_created: 2018-09-20T12:35:35Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1088/0268-1242/25/7/075003
intvolume: ' 25'
issue: '7'
language:
- iso: eng
publication: Semiconductor Science and Technology
publication_identifier:
issn:
- 0268-1242
- 1361-6641
publication_status: published
publisher: IOP Publishing
status: public
title: Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers
type: journal_article
user_id: '49428'
volume: 25
year: '2010'
...
---
_id: '4550'
abstract:
- lang: eng
text: We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled
molecular beam epitaxial growth into the intrinsic region of a p-i-n junction
diode. This is achieved using an in situ combination of focused ion beam prepatterning,
annealing, and overgrowth, resulting in arrays of individually electrically addressable
(In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence
spectroscopy we demonstrate that these QDs have the same optical quality as optically
pumped Stranski–Krastanov QDs with random nucleation located in proximity to a
doped interface. The results suggest that this technique is scalable and highly
interesting for different applications in quantum devices.
article_number: '143101'
article_type: original
author:
- first_name: M.
full_name: Mehta, M.
last_name: Mehta
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: S.
full_name: Michaelis de Vasconcellos, S.
last_name: Michaelis de Vasconcellos
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier
C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting
diode. Applied Physics Letters. 2010;97(14). doi:10.1063/1.3488812
apa: Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner,
A., & Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot
in a micron sized light emitting diode. Applied Physics Letters, 97(14).
https://doi.org/10.1063/1.3488812
bibtex: '@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010,
title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light
emitting diode}, volume={97}, DOI={10.1063/1.3488812},
number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos,
S. and Zrenner, Artur and Meier, Cedrik}, year={2010} }'
chicago: Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, Artur
Zrenner, and Cedrik Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot
in a Micron Sized Light Emitting Diode.” Applied Physics Letters 97, no.
14 (2010). https://doi.org/10.1063/1.3488812.
ieee: M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized
light emitting diode,” Applied Physics Letters, vol. 97, no. 14, 2010.
mla: Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron
Sized Light Emitting Diode.” Applied Physics Letters, vol. 97, no. 14,
143101, AIP Publishing, 2010, doi:10.1063/1.3488812.
short: M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
C. Meier, Applied Physics Letters 97 (2010).
date_created: 2018-09-20T12:38:51Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '287'
doi: 10.1063/1.3488812
intvolume: ' 97'
issue: '14'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting
diode
type: journal_article
user_id: '20798'
volume: 97
year: '2010'
...
---
_id: '4551'
abstract:
- lang: eng
text: An intentional positioning of optically active quantum dots using site-selective
growth by a combination of molecular beam epitaxy (MBE) and focused ion beam (FIB)
implantation in an all-ultra-high-vacuum (UHV) setup has been successfully demonstrated.
A square array of periodic holes on GaAs substrate was fabricated with FIB of
30 keV ions followed by an in situ annealing step. Subsequently, the patterned
holes were overgrown with an optimized amount of InAs in order to achieve site-selective
growth of the QDs on the patterned holes. Under well-optimized conditions, a selectivity
of single quantum dot growth in the patterned holes of 52% was achieved. Thereafter,
carrier injection and subsequent radiative recombination from the positioned InAs/GaAs
self-assembled QDs was investigated by embedding the QDs in the intrinsic part
of a GaAs-based p–i–n junction device. Electroluminescence spectra taken at 77
K show interband transitions up to the fifth excited state from the QDs.
article_type: original
author:
- first_name: Minisha
full_name: Mehta, Minisha
last_name: Mehta
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Alexander
full_name: Melnikov, Alexander
last_name: Melnikov
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Steffen
full_name: Michaelis de Vasconcellos, Steffen
last_name: Michaelis de Vasconcellos
- first_name: Tim
full_name: Baumgarten, Tim
last_name: Baumgarten
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: 'Mehta M, Reuter D, Melnikov A, et al. Intentionally positioned self-assembled
InAs quantum dots in an electroluminescent p–i–n junction diode. Physica E:
Low-dimensional Systems and Nanostructures. 2010;42(10):2749-2752. doi:10.1016/j.physe.2009.12.053'
apa: 'Mehta, M., Reuter, D., Melnikov, A., Wieck, A. D., Michaelis de Vasconcellos,
S., Baumgarten, T., … Meier, C. (2010). Intentionally positioned self-assembled
InAs quantum dots in an electroluminescent p–i–n junction diode. Physica E:
Low-Dimensional Systems and Nanostructures, 42(10), 2749–2752. https://doi.org/10.1016/j.physe.2009.12.053'
bibtex: '@article{Mehta_Reuter_Melnikov_Wieck_Michaelis de Vasconcellos_Baumgarten_Zrenner_Meier_2010,
title={Intentionally positioned self-assembled InAs quantum dots in an electroluminescent
p–i–n junction diode}, volume={42}, DOI={10.1016/j.physe.2009.12.053},
number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures},
publisher={Elsevier BV}, author={Mehta, Minisha and Reuter, Dirk and Melnikov,
Alexander and Wieck, Andreas D. and Michaelis de Vasconcellos, Steffen and Baumgarten,
Tim and Zrenner, Artur and Meier, Cedrik}, year={2010}, pages={2749–2752} }'
chicago: 'Mehta, Minisha, Dirk Reuter, Alexander Melnikov, Andreas D. Wieck, Steffen
Michaelis de Vasconcellos, Tim Baumgarten, Artur Zrenner, and Cedrik Meier. “Intentionally
Positioned Self-Assembled InAs Quantum Dots in an Electroluminescent p–i–n Junction
Diode.” Physica E: Low-Dimensional Systems and Nanostructures 42, no. 10
(2010): 2749–52. https://doi.org/10.1016/j.physe.2009.12.053.'
ieee: 'M. Mehta et al., “Intentionally positioned self-assembled InAs quantum
dots in an electroluminescent p–i–n junction diode,” Physica E: Low-dimensional
Systems and Nanostructures, vol. 42, no. 10, pp. 2749–2752, 2010.'
mla: 'Mehta, Minisha, et al. “Intentionally Positioned Self-Assembled InAs Quantum
Dots in an Electroluminescent p–i–n Junction Diode.” Physica E: Low-Dimensional
Systems and Nanostructures, vol. 42, no. 10, Elsevier BV, 2010, pp. 2749–52,
doi:10.1016/j.physe.2009.12.053.'
short: 'M. Mehta, D. Reuter, A. Melnikov, A.D. Wieck, S. Michaelis de Vasconcellos,
T. Baumgarten, A. Zrenner, C. Meier, Physica E: Low-Dimensional Systems and Nanostructures
42 (2010) 2749–2752.'
date_created: 2018-09-20T12:42:40Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '287'
doi: 10.1016/j.physe.2009.12.053
intvolume: ' 42'
issue: '10'
keyword:
- Molecular beam epitaxy
- Focused ion beam
- Self-assembled quantum dot
- Electroluminescence
language:
- iso: eng
page: 2749-2752
publication: 'Physica E: Low-dimensional Systems and Nanostructures'
publication_identifier:
issn:
- 1386-9477
publication_status: published
publisher: Elsevier BV
status: public
title: Intentionally positioned self-assembled InAs quantum dots in an electroluminescent
p–i–n junction diode
type: journal_article
user_id: '20798'
volume: 42
year: '2010'
...
---
_id: '4552'
abstract:
- lang: eng
text: Here we report on investigations on CdSe quantum dots incorporated in ZnSe
based Schottky photodiodes with near-field shadow masks. Photoluminescence and
photocurrent of individual quantum dots were studied as a function of the applied
bias voltage. The exciton energy of the quantum dot ground state transition was
shifted to the excitation energy by using the Stark effect tuning via an external
bias voltage. Under the condition of resonance with the laser excitation energy
we observed a resonant photocurrent signal due to the tunnelling of carriers out
of the quantum dots at electric fields above 500 kV/cm.
article_type: original
author:
- first_name: M.
full_name: Panfilova, M.
last_name: Panfilova
- first_name: S.
full_name: Michaelis de Vasconcellos, S.
last_name: Michaelis de Vasconcellos
- first_name: A.
full_name: Pawlis, A.
last_name: Pawlis
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
citation:
ama: 'Panfilova M, Michaelis de Vasconcellos S, Pawlis A, Lischka K, Zrenner A.
Resonant photocurrent-spectroscopy of individual CdSe quantum dots. Physica
E: Low-dimensional Systems and Nanostructures. 2010;42(10):2521-2523. doi:10.1016/j.physe.2010.01.013'
apa: 'Panfilova, M., Michaelis de Vasconcellos, S., Pawlis, A., Lischka, K., &
Zrenner, A. (2010). Resonant photocurrent-spectroscopy of individual CdSe quantum
dots. Physica E: Low-Dimensional Systems and Nanostructures, 42(10),
2521–2523. https://doi.org/10.1016/j.physe.2010.01.013'
bibtex: '@article{Panfilova_Michaelis de Vasconcellos_Pawlis_Lischka_Zrenner_2010,
title={Resonant photocurrent-spectroscopy of individual CdSe quantum dots}, volume={42},
DOI={10.1016/j.physe.2010.01.013},
number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures},
publisher={Elsevier BV}, author={Panfilova, M. and Michaelis de Vasconcellos,
S. and Pawlis, A. and Lischka, K. and Zrenner, Artur}, year={2010}, pages={2521–2523}
}'
chicago: 'Panfilova, M., S. Michaelis de Vasconcellos, A. Pawlis, K. Lischka, and
Artur Zrenner. “Resonant Photocurrent-Spectroscopy of Individual CdSe Quantum
Dots.” Physica E: Low-Dimensional Systems and Nanostructures 42, no. 10
(2010): 2521–23. https://doi.org/10.1016/j.physe.2010.01.013.'
ieee: 'M. Panfilova, S. Michaelis de Vasconcellos, A. Pawlis, K. Lischka, and A.
Zrenner, “Resonant photocurrent-spectroscopy of individual CdSe quantum dots,”
Physica E: Low-dimensional Systems and Nanostructures, vol. 42, no. 10,
pp. 2521–2523, 2010.'
mla: 'Panfilova, M., et al. “Resonant Photocurrent-Spectroscopy of Individual CdSe
Quantum Dots.” Physica E: Low-Dimensional Systems and Nanostructures, vol.
42, no. 10, Elsevier BV, 2010, pp. 2521–23, doi:10.1016/j.physe.2010.01.013.'
short: 'M. Panfilova, S. Michaelis de Vasconcellos, A. Pawlis, K. Lischka, A. Zrenner,
Physica E: Low-Dimensional Systems and Nanostructures 42 (2010) 2521–2523.'
date_created: 2018-09-20T12:45:46Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1016/j.physe.2010.01.013
intvolume: ' 42'
issue: '10'
keyword:
- CdSe/ZnSe quantum dots
- Photodiode
- Quantum confined Stark Effect
- Photocurrent
- II–VI Semiconductors
language:
- iso: eng
page: 2521-2523
publication: 'Physica E: Low-dimensional Systems and Nanostructures'
publication_identifier:
issn:
- 1386-9477
publication_status: published
publisher: Elsevier BV
status: public
title: Resonant photocurrent-spectroscopy of individual CdSe quantum dots
type: journal_article
user_id: '49428'
volume: 42
year: '2010'
...
---
_id: '7251'
author:
- first_name: Atsushi
full_name: Ishikawa, Atsushi
last_name: Ishikawa
- first_name: Rupert F.
full_name: Oulton, Rupert F.
last_name: Oulton
- first_name: Thomas
full_name: Zentgraf, Thomas
id: '30525'
last_name: Zentgraf
orcid: 0000-0002-8662-1101
- first_name: Xiang
full_name: Zhang, Xiang
last_name: Zhang
citation:
ama: 'Ishikawa A, Oulton RF, Zentgraf T, Zhang X. Extremely low-loss slow-light
modes in plasmonic dielectric hybrid systems. In: Stockman MI, ed. Plasmonics:
Metallic Nanostructures and Their Optical Properties VIII. SPIE; 2010. doi:10.1117/12.860190'
apa: 'Ishikawa, A., Oulton, R. F., Zentgraf, T., & Zhang, X. (2010). Extremely
low-loss slow-light modes in plasmonic dielectric hybrid systems. In M. I. Stockman
(Ed.), Plasmonics: Metallic Nanostructures and Their Optical Properties VIII.
SPIE. https://doi.org/10.1117/12.860190'
bibtex: '@inproceedings{Ishikawa_Oulton_Zentgraf_Zhang_2010, title={Extremely low-loss
slow-light modes in plasmonic dielectric hybrid systems}, DOI={10.1117/12.860190},
booktitle={Plasmonics: Metallic Nanostructures and Their Optical Properties VIII},
publisher={SPIE}, author={Ishikawa, Atsushi and Oulton, Rupert F. and Zentgraf,
Thomas and Zhang, Xiang}, editor={Stockman, Mark I.Editor}, year={2010} }'
chicago: 'Ishikawa, Atsushi, Rupert F. Oulton, Thomas Zentgraf, and Xiang Zhang.
“Extremely Low-Loss Slow-Light Modes in Plasmonic Dielectric Hybrid Systems.”
In Plasmonics: Metallic Nanostructures and Their Optical Properties VIII,
edited by Mark I. Stockman. SPIE, 2010. https://doi.org/10.1117/12.860190.'
ieee: 'A. Ishikawa, R. F. Oulton, T. Zentgraf, and X. Zhang, “Extremely low-loss
slow-light modes in plasmonic dielectric hybrid systems,” in Plasmonics: Metallic
Nanostructures and Their Optical Properties VIII, 2010.'
mla: 'Ishikawa, Atsushi, et al. “Extremely Low-Loss Slow-Light Modes in Plasmonic
Dielectric Hybrid Systems.” Plasmonics: Metallic Nanostructures and Their Optical
Properties VIII, edited by Mark I. Stockman, SPIE, 2010, doi:10.1117/12.860190.'
short: 'A. Ishikawa, R.F. Oulton, T. Zentgraf, X. Zhang, in: M.I. Stockman (Ed.),
Plasmonics: Metallic Nanostructures and Their Optical Properties VIII, SPIE, 2010.'
date_created: 2019-01-30T07:22:54Z
date_updated: 2022-01-06T07:03:30Z
department:
- _id: '15'
- _id: '230'
doi: 10.1117/12.860190
editor:
- first_name: Mark I.
full_name: Stockman, Mark I.
last_name: Stockman
language:
- iso: eng
publication: 'Plasmonics: Metallic Nanostructures and Their Optical Properties VIII'
publication_status: published
publisher: SPIE
status: public
title: Extremely low-loss slow-light modes in plasmonic dielectric hybrid systems
type: conference
user_id: '30525'
year: '2010'
...
---
_id: '7252'
author:
- first_name: Volker J.
full_name: Sorger, Volker J.
last_name: Sorger
- first_name: Rupert F.
full_name: Oulton, Rupert F.
last_name: Oulton
- first_name: Thomas
full_name: Zentgraf, Thomas
id: '30525'
last_name: Zentgraf
orcid: 0000-0002-8662-1101
- first_name: Renmin
full_name: Ma, Renmin
last_name: Ma
- first_name: Christopher
full_name: Gladden, Christopher
last_name: Gladden
- first_name: Lun
full_name: Dai, Lun
last_name: Dai
- first_name: Guy
full_name: Bartal, Guy
last_name: Bartal
- first_name: Xiang
full_name: Zhang, Xiang
last_name: Zhang
citation:
ama: 'Sorger VJ, Oulton RF, Zentgraf T, et al. Semiconductor plasmon laser. In:
Stockman MI, ed. Plasmonics: Metallic Nanostructures and Their Optical Properties
VIII. SPIE; 2010. doi:10.1117/12.859136'
apa: 'Sorger, V. J., Oulton, R. F., Zentgraf, T., Ma, R., Gladden, C., Dai, L.,
… Zhang, X. (2010). Semiconductor plasmon laser. In M. I. Stockman (Ed.), Plasmonics:
Metallic Nanostructures and Their Optical Properties VIII. SPIE. https://doi.org/10.1117/12.859136'
bibtex: '@inproceedings{Sorger_Oulton_Zentgraf_Ma_Gladden_Dai_Bartal_Zhang_2010,
title={Semiconductor plasmon laser}, DOI={10.1117/12.859136},
booktitle={Plasmonics: Metallic Nanostructures and Their Optical Properties VIII},
publisher={SPIE}, author={Sorger, Volker J. and Oulton, Rupert F. and Zentgraf,
Thomas and Ma, Renmin and Gladden, Christopher and Dai, Lun and Bartal, Guy and
Zhang, Xiang}, editor={Stockman, Mark I.Editor}, year={2010} }'
chicago: 'Sorger, Volker J., Rupert F. Oulton, Thomas Zentgraf, Renmin Ma, Christopher
Gladden, Lun Dai, Guy Bartal, and Xiang Zhang. “Semiconductor Plasmon Laser.”
In Plasmonics: Metallic Nanostructures and Their Optical Properties VIII,
edited by Mark I. Stockman. SPIE, 2010. https://doi.org/10.1117/12.859136.'
ieee: 'V. J. Sorger et al., “Semiconductor plasmon laser,” in Plasmonics:
Metallic Nanostructures and Their Optical Properties VIII, 2010.'
mla: 'Sorger, Volker J., et al. “Semiconductor Plasmon Laser.” Plasmonics: Metallic
Nanostructures and Their Optical Properties VIII, edited by Mark I. Stockman,
SPIE, 2010, doi:10.1117/12.859136.'
short: 'V.J. Sorger, R.F. Oulton, T. Zentgraf, R. Ma, C. Gladden, L. Dai, G. Bartal,
X. Zhang, in: M.I. Stockman (Ed.), Plasmonics: Metallic Nanostructures and Their
Optical Properties VIII, SPIE, 2010.'
date_created: 2019-01-30T07:24:06Z
date_updated: 2022-01-06T07:03:30Z
department:
- _id: '15'
- _id: '230'
doi: 10.1117/12.859136
editor:
- first_name: Mark I.
full_name: Stockman, Mark I.
last_name: Stockman
language:
- iso: eng
publication: 'Plasmonics: Metallic Nanostructures and Their Optical Properties VIII'
publication_status: published
publisher: SPIE
status: public
title: Semiconductor plasmon laser
type: conference
user_id: '30525'
year: '2010'
...
---
_id: '7494'
article_number: H119
author:
- first_name: M.
full_name: Mehta, M.
last_name: Mehta
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Mehta M, Meier C. Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single
Crystals. Journal of The Electrochemical Society. 2010;158(2). doi:10.1149/1.3519999
apa: Mehta, M., & Meier, C. (2010). Controlled Etching Behavior of O-Polar and
Zn-Polar ZnO Single Crystals. Journal of The Electrochemical Society, 158(2).
https://doi.org/10.1149/1.3519999
bibtex: '@article{Mehta_Meier_2010, title={Controlled Etching Behavior of O-Polar
and Zn-Polar ZnO Single Crystals}, volume={158}, DOI={10.1149/1.3519999},
number={2H119}, journal={Journal of The Electrochemical Society}, publisher={The
Electrochemical Society}, author={Mehta, M. and Meier, Cedrik}, year={2010} }'
chicago: Mehta, M., and Cedrik Meier. “Controlled Etching Behavior of O-Polar and
Zn-Polar ZnO Single Crystals.” Journal of The Electrochemical Society 158,
no. 2 (2010). https://doi.org/10.1149/1.3519999.
ieee: M. Mehta and C. Meier, “Controlled Etching Behavior of O-Polar and Zn-Polar
ZnO Single Crystals,” Journal of The Electrochemical Society, vol. 158,
no. 2, 2010.
mla: Mehta, M., and Cedrik Meier. “Controlled Etching Behavior of O-Polar and Zn-Polar
ZnO Single Crystals.” Journal of The Electrochemical Society, vol. 158,
no. 2, H119, The Electrochemical Society, 2010, doi:10.1149/1.3519999.
short: M. Mehta, C. Meier, Journal of The Electrochemical Society 158 (2010).
date_created: 2019-02-04T14:35:22Z
date_updated: 2022-01-06T07:03:39Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '287'
doi: 10.1149/1.3519999
intvolume: ' 158'
issue: '2'
language:
- iso: eng
publication: Journal of The Electrochemical Society
publication_identifier:
issn:
- 0013-4651
publication_status: published
publisher: The Electrochemical Society
status: public
title: Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals
type: journal_article
user_id: '20798'
volume: 158
year: '2010'
...
---
_id: '7496'
article_number: '455201'
author:
- first_name: Jens
full_name: Theis, Jens
last_name: Theis
- first_name: Martin
full_name: Geller, Martin
last_name: Geller
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
- first_name: Hartmut
full_name: Wiggers, Hartmut
last_name: Wiggers
- first_name: Andreas
full_name: Wieck, Andreas
last_name: Wieck
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Theis J, Geller M, Lorke A, Wiggers H, Wieck A, Meier C. Electroluminescence
from silicon nanoparticles fabricated from the gas phase. Nanotechnology.
2010;21(45). doi:10.1088/0957-4484/21/45/455201
apa: Theis, J., Geller, M., Lorke, A., Wiggers, H., Wieck, A., & Meier, C. (2010).
Electroluminescence from silicon nanoparticles fabricated from the gas phase.
Nanotechnology, 21(45). https://doi.org/10.1088/0957-4484/21/45/455201
bibtex: '@article{Theis_Geller_Lorke_Wiggers_Wieck_Meier_2010, title={Electroluminescence
from silicon nanoparticles fabricated from the gas phase}, volume={21}, DOI={10.1088/0957-4484/21/45/455201},
number={45455201}, journal={Nanotechnology}, publisher={IOP Publishing}, author={Theis,
Jens and Geller, Martin and Lorke, Axel and Wiggers, Hartmut and Wieck, Andreas
and Meier, Cedrik}, year={2010} }'
chicago: Theis, Jens, Martin Geller, Axel Lorke, Hartmut Wiggers, Andreas Wieck,
and Cedrik Meier. “Electroluminescence from Silicon Nanoparticles Fabricated from
the Gas Phase.” Nanotechnology 21, no. 45 (2010). https://doi.org/10.1088/0957-4484/21/45/455201.
ieee: J. Theis, M. Geller, A. Lorke, H. Wiggers, A. Wieck, and C. Meier, “Electroluminescence
from silicon nanoparticles fabricated from the gas phase,” Nanotechnology,
vol. 21, no. 45, 2010.
mla: Theis, Jens, et al. “Electroluminescence from Silicon Nanoparticles Fabricated
from the Gas Phase.” Nanotechnology, vol. 21, no. 45, 455201, IOP Publishing,
2010, doi:10.1088/0957-4484/21/45/455201.
short: J. Theis, M. Geller, A. Lorke, H. Wiggers, A. Wieck, C. Meier, Nanotechnology
21 (2010).
date_created: 2019-02-04T14:39:19Z
date_updated: 2022-01-06T07:03:39Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '287'
doi: 10.1088/0957-4484/21/45/455201
intvolume: ' 21'
issue: '45'
language:
- iso: eng
publication: Nanotechnology
publication_identifier:
issn:
- 0957-4484
- 1361-6528
publication_status: published
publisher: IOP Publishing
status: public
title: Electroluminescence from silicon nanoparticles fabricated from the gas phase
type: journal_article
user_id: '20798'
volume: 21
year: '2010'
...
---
_id: '4129'
abstract:
- lang: eng
text: We study a single quantum dot molecule doped with one electron in the presence
of electron-phonon coupling. Both diagonal and off-diagonal interactions representing
real and virtual processes with acoustic phonons via deformation potential and
piezoelectric coupling are taken into account. We employ a non-perturbative quantum
kinetic theory and show that the phonon-mediated relaxation is dominated by an
electron tunneling on a picosecond time scale.A dependence of the relaxation on
the temperature and the strength of the tunneling coupling is analyzed.
article_number: '012035'
article_type: original
author:
- first_name: Anna
full_name: Grodecka-Grad, Anna
last_name: Grodecka-Grad
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
citation:
ama: 'Grodecka-Grad A, Förstner J. Phonon-mediated relaxation in doped quantum dot
molecules. Journal of Physics: Conference Series. 2010;245. doi:10.1088/1742-6596/245/1/012035'
apa: 'Grodecka-Grad, A., & Förstner, J. (2010). Phonon-mediated relaxation in
doped quantum dot molecules. Journal of Physics: Conference Series, 245.
https://doi.org/10.1088/1742-6596/245/1/012035'
bibtex: '@article{Grodecka-Grad_Förstner_2010, title={Phonon-mediated relaxation
in doped quantum dot molecules}, volume={245}, DOI={10.1088/1742-6596/245/1/012035},
number={012035}, journal={Journal of Physics: Conference Series}, publisher={IOP
Publishing}, author={Grodecka-Grad, Anna and Förstner, Jens}, year={2010} }'
chicago: 'Grodecka-Grad, Anna, and Jens Förstner. “Phonon-Mediated Relaxation in
Doped Quantum Dot Molecules.” Journal of Physics: Conference Series 245
(2010). https://doi.org/10.1088/1742-6596/245/1/012035.'
ieee: 'A. Grodecka-Grad and J. Förstner, “Phonon-mediated relaxation in doped quantum
dot molecules,” Journal of Physics: Conference Series, vol. 245, 2010.'
mla: 'Grodecka-Grad, Anna, and Jens Förstner. “Phonon-Mediated Relaxation in Doped
Quantum Dot Molecules.” Journal of Physics: Conference Series, vol. 245,
012035, IOP Publishing, 2010, doi:10.1088/1742-6596/245/1/012035.'
short: 'A. Grodecka-Grad, J. Förstner, Journal of Physics: Conference Series 245
(2010).'
date_created: 2018-08-27T10:33:04Z
date_updated: 2022-01-06T07:00:22Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1088/1742-6596/245/1/012035
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-27T10:34:26Z
date_updated: 2018-08-27T10:34:26Z
file_id: '4130'
file_name: 2010 Grodecka-Grad,Förstner_Phonon-mediated relaxation in doped quantum
dot molecules.pdf
file_size: 896613
relation: main_file
success: 1
file_date_updated: 2018-08-27T10:34:26Z
has_accepted_license: '1'
intvolume: ' 245'
keyword:
- tet_topic_qd
language:
- iso: eng
publication: 'Journal of Physics: Conference Series'
publication_identifier:
issn:
- 1742-6596
publication_status: published
publisher: IOP Publishing
status: public
title: Phonon-mediated relaxation in doped quantum dot molecules
type: journal_article
user_id: '55706'
volume: 245
year: '2010'
...
---
_id: '4144'
abstract:
- lang: eng
text: "Non-polar relaxed cubic GaN was grown by molecular beam epitaxy (MBE) on
nano-patterned 3C-SiC/Si \r\n(0 0 1)substrates with negligible hexagonal content
and less defect density than in planar cubic GaN layers.Nano-patterning of 3C-SiC/Si(001)
is achieved by self-ordered colloidal masks for the first time. The method presented
here offers the possibility to create nano-patterned cubic GaN without the need
for a GaN etching process andt hus isa potential alternative to the conventional
top–down fabrication techniques."
article_type: original
author:
- first_name: R.M.
full_name: Kemper, R.M.
last_name: Kemper
- first_name: M.
full_name: Weinl, M.
last_name: Weinl
- first_name: C.
full_name: Mietze, C.
last_name: Mietze
- first_name: M.
full_name: Häberlen, M.
last_name: Häberlen
- first_name: T.
full_name: Schupp, T.
last_name: Schupp
- first_name: E.
full_name: Tschumak, E.
last_name: Tschumak
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
- first_name: 'Donald '
full_name: 'As, Donald '
last_name: As
citation:
ama: Kemper RM, Weinl M, Mietze C, et al. Growth of cubic GaN on nano-patterned
3C-SiC/Si (001) substrates. Journal of Crystal Growth. 2010;323(1):84-87.
doi:10.1016/j.jcrysgro.2010.12.042
apa: Kemper, R. M., Weinl, M., Mietze, C., Häberlen, M., Schupp, T., Tschumak, E.,
… As, D. (2010). Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates.
Journal of Crystal Growth, 323(1), 84–87. https://doi.org/10.1016/j.jcrysgro.2010.12.042
bibtex: '@article{Kemper_Weinl_Mietze_Häberlen_Schupp_Tschumak_Lindner_Lischka_As_2010,
title={Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates}, volume={323},
DOI={10.1016/j.jcrysgro.2010.12.042},
number={1}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Kemper,
R.M. and Weinl, M. and Mietze, C. and Häberlen, M. and Schupp, T. and Tschumak,
E. and Lindner, Jörg and Lischka, K. and As, Donald }, year={2010}, pages={84–87}
}'
chicago: 'Kemper, R.M., M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak,
Jörg Lindner, K. Lischka, and Donald As. “Growth of Cubic GaN on Nano-Patterned
3C-SiC/Si (001) Substrates.” Journal of Crystal Growth 323, no. 1 (2010):
84–87. https://doi.org/10.1016/j.jcrysgro.2010.12.042.'
ieee: R. M. Kemper et al., “Growth of cubic GaN on nano-patterned 3C-SiC/Si
(001) substrates,” Journal of Crystal Growth, vol. 323, no. 1, pp. 84–87,
2010.
mla: Kemper, R. M., et al. “Growth of Cubic GaN on Nano-Patterned 3C-SiC/Si (001)
Substrates.” Journal of Crystal Growth, vol. 323, no. 1, Elsevier BV, 2010,
pp. 84–87, doi:10.1016/j.jcrysgro.2010.12.042.
short: R.M. Kemper, M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak, J.
Lindner, K. Lischka, D. As, Journal of Crystal Growth 323 (2010) 84–87.
date_created: 2018-08-27T12:34:33Z
date_updated: 2022-01-06T07:00:24Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1016/j.jcrysgro.2010.12.042
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-27T12:35:32Z
date_updated: 2018-08-27T12:35:32Z
file_id: '4145'
file_name: Growth of cubic GaN on nano-patterned 3C-SiC (001) substrates.pdf
file_size: 665964
relation: main_file
success: 1
file_date_updated: 2018-08-27T12:35:32Z
has_accepted_license: '1'
intvolume: ' 323'
issue: '1'
language:
- iso: eng
page: 84-87
publication: Journal of Crystal Growth
publication_identifier:
issn:
- 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates
type: journal_article
user_id: '55706'
volume: 323
year: '2010'
...
---
_id: '4153'
abstract:
- lang: eng
text: Nanosphere lithography (NSL) masks consisting of mono- or double-layers of
polystyrene (PS) nano-beads are fabricated on silicon exploiting the self-organization
of PS particles during the controlled drying of a colloidal suspension on a surface.
The shape changes and shrinkage of PS sphere masks upon treatment in an air plasma
are studied as a function of initial sphere size, plasma power and treatment time.
The influence of several experimental parameters, including the plasma induced
temperature rise, are analysed using scanning and transmission electron microscopy.
It is demonstrated that a variety of new intriguing nanopatterns can be generated
on silicon surfaces by the combination of NSL and plasma techniques, largely broadening
the variety of patterns available so far by NSL.
article_type: original
author:
- first_name: D.
full_name: Gogel, D.
last_name: Gogel
- first_name: M.
full_name: Weinl, M.
last_name: Weinl
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: B.
full_name: Stritzker, B.
last_name: Stritzker
citation:
ama: Gogel D, Weinl M, Lindner J, Stritzker B. Plasma modification of nanosphere
lithography masks made of polystyrene beads. JOURNAL OF OPTOELECTRONICS AND
ADVANCED MATERIALS. 2010;12(3):740-744.
apa: Gogel, D., Weinl, M., Lindner, J., & Stritzker, B. (2010). Plasma modification
of nanosphere lithography masks made of polystyrene beads. JOURNAL OF OPTOELECTRONICS
AND ADVANCED MATERIALS, 12(3), 740–744.
bibtex: '@article{Gogel_Weinl_Lindner_Stritzker_2010, title={Plasma modification
of nanosphere lithography masks made of polystyrene beads}, volume={12}, number={3},
journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS}, author={Gogel, D.
and Weinl, M. and Lindner, Jörg and Stritzker, B.}, year={2010}, pages={740–744}
}'
chicago: 'Gogel, D., M. Weinl, Jörg Lindner, and B. Stritzker. “Plasma Modification
of Nanosphere Lithography Masks Made of Polystyrene Beads.” JOURNAL OF OPTOELECTRONICS
AND ADVANCED MATERIALS 12, no. 3 (2010): 740–44.'
ieee: D. Gogel, M. Weinl, J. Lindner, and B. Stritzker, “Plasma modification of
nanosphere lithography masks made of polystyrene beads,” JOURNAL OF OPTOELECTRONICS
AND ADVANCED MATERIALS, vol. 12, no. 3, pp. 740–744, 2010.
mla: Gogel, D., et al. “Plasma Modification of Nanosphere Lithography Masks Made
of Polystyrene Beads.” JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS,
vol. 12, no. 3, 2010, pp. 740–44.
short: D. Gogel, M. Weinl, J. Lindner, B. Stritzker, JOURNAL OF OPTOELECTRONICS
AND ADVANCED MATERIALS 12 (2010) 740–744.
date_created: 2018-08-27T13:29:28Z
date_updated: 2022-01-06T07:00:26Z
department:
- _id: '286'
- _id: '230'
intvolume: ' 12'
issue: '3'
language:
- iso: eng
page: 740-744
publication: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
status: public
title: Plasma modification of nanosphere lithography masks made of polystyrene beads
type: journal_article
user_id: '55706'
volume: 12
year: '2010'
...
---
_id: '4174'
abstract:
- lang: eng
text: "A quantum dot molecule doped with a single electron in the presence of diagonal
and off-diagonal carrierphonon\r\ncouplings is studied by means of a nonperturbative
quantum kinetic theory. The interaction with acoustic phonons by deformation potential
and piezoelectric coupling is taken into account. We show that the phonon-mediated
relaxation is fast on a picosecond time scale and is dominated by the usually
neglected off-diagonal coupling to the lattice degrees of freedom leading to phonon-assisted
electron tunneling. We show that in the parameter regime of current electrical
and optical experiments, the microscopic non-Markovian theory has to be employed."
article_number: '115305'
article_type: original
author:
- first_name: A.
full_name: Grodecka-Grad, A.
last_name: Grodecka-Grad
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
citation:
ama: Grodecka-Grad A, Förstner J. Theory of phonon-mediated relaxation in doped
quantum dot molecules. Physical Review B. 2010;81(11). doi:10.1103/physrevb.81.115305
apa: Grodecka-Grad, A., & Förstner, J. (2010). Theory of phonon-mediated relaxation
in doped quantum dot molecules. Physical Review B, 81(11). https://doi.org/10.1103/physrevb.81.115305
bibtex: '@article{Grodecka-Grad_Förstner_2010, title={Theory of phonon-mediated
relaxation in doped quantum dot molecules}, volume={81}, DOI={10.1103/physrevb.81.115305},
number={11115305}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Grodecka-Grad, A. and Förstner, Jens}, year={2010} }'
chicago: Grodecka-Grad, A., and Jens Förstner. “Theory of Phonon-Mediated Relaxation
in Doped Quantum Dot Molecules.” Physical Review B 81, no. 11 (2010). https://doi.org/10.1103/physrevb.81.115305.
ieee: A. Grodecka-Grad and J. Förstner, “Theory of phonon-mediated relaxation in
doped quantum dot molecules,” Physical Review B, vol. 81, no. 11, 2010.
mla: Grodecka-Grad, A., and Jens Förstner. “Theory of Phonon-Mediated Relaxation
in Doped Quantum Dot Molecules.” Physical Review B, vol. 81, no. 11, 115305,
American Physical Society (APS), 2010, doi:10.1103/physrevb.81.115305.
short: A. Grodecka-Grad, J. Förstner, Physical Review B 81 (2010).
date_created: 2018-08-28T08:57:24Z
date_updated: 2022-01-06T07:00:29Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1103/physrevb.81.115305
file:
- access_level: open_access
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T08:58:21Z
date_updated: 2018-09-04T19:58:41Z
file_id: '4175'
file_name: 2010 Grodecka-Grad,Förstner_Theory of phonon-mediated relaxation in doped
quantum dot molecules.pdf
file_size: 680408
relation: main_file
file_date_updated: 2018-09-04T19:58:41Z
has_accepted_license: '1'
intvolume: ' 81'
issue: '11'
keyword:
- tet_topic_qd
language:
- iso: eng
oa: '1'
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Theory of phonon-mediated relaxation in doped quantum dot molecules
type: journal_article
urn: '41740'
user_id: '158'
volume: 81
year: '2010'
...
---
_id: '4194'
abstract:
- lang: eng
text: A heterojunction field-effect transistor (HFET) was fabricated of nonpolar
cubic AlGaN/GaN grown on Ar+ implanted 3C–SiC (001) by molecular beam epitaxy.
The device shows a clear field effect at positive bias voltages with V_th=0.6
V. The HFET output characteristics were calculated using ATLAS simulation program.
The electron channel at the cubic AlGaN/GaN interface was detected by room temperature
capacitance-voltage measurements.
article_number: '253501'
article_type: original
author:
- first_name: E.
full_name: Tschumak, E.
last_name: Tschumak
- first_name: R.
full_name: Granzner, R.
last_name: Granzner
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: F.
full_name: Schwierz, F.
last_name: Schwierz
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
- first_name: H.
full_name: Nagasawa, H.
last_name: Nagasawa
- first_name: M.
full_name: Abe, M.
last_name: Abe
- first_name: Donald
full_name: As, Donald
last_name: As
citation:
ama: Tschumak E, Granzner R, Lindner J, et al. Nonpolar cubic AlGaN/GaN heterojunction
field-effect transistor on Ar+ implanted 3C–SiC (001). Applied Physics Letters.
2010;96(25). doi:10.1063/1.3455066
apa: Tschumak, E., Granzner, R., Lindner, J., Schwierz, F., Lischka, K., Nagasawa,
H., … As, D. (2010). Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor
on Ar+ implanted 3C–SiC (001). Applied Physics Letters, 96(25).
https://doi.org/10.1063/1.3455066
bibtex: '@article{Tschumak_Granzner_Lindner_Schwierz_Lischka_Nagasawa_Abe_As_2010,
title={Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+
implanted 3C–SiC (001)}, volume={96}, DOI={10.1063/1.3455066},
number={25253501}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Tschumak, E. and Granzner, R. and Lindner, Jörg and Schwierz, F. and Lischka,
K. and Nagasawa, H. and Abe, M. and As, Donald}, year={2010} }'
chicago: Tschumak, E., R. Granzner, Jörg Lindner, F. Schwierz, K. Lischka, H. Nagasawa,
M. Abe, and Donald As. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor
on Ar+ Implanted 3C–SiC (001).” Applied Physics Letters 96, no. 25 (2010).
https://doi.org/10.1063/1.3455066.
ieee: E. Tschumak et al., “Nonpolar cubic AlGaN/GaN heterojunction field-effect
transistor on Ar+ implanted 3C–SiC (001),” Applied Physics Letters, vol.
96, no. 25, 2010.
mla: Tschumak, E., et al. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect
Transistor on Ar+ Implanted 3C–SiC (001).” Applied Physics Letters, vol.
96, no. 25, 253501, AIP Publishing, 2010, doi:10.1063/1.3455066.
short: E. Tschumak, R. Granzner, J. Lindner, F. Schwierz, K. Lischka, H. Nagasawa,
M. Abe, D. As, Applied Physics Letters 96 (2010).
date_created: 2018-08-28T11:56:08Z
date_updated: 2022-01-06T07:00:33Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1063/1.3455066
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T11:58:27Z
date_updated: 2018-08-28T11:58:27Z
file_id: '4195'
file_name: Non-polar cubic AlGaN-GaN HFET on Ar+ implanted 3C-SiC 001.pdf
file_size: 277385
relation: main_file
success: 1
file_date_updated: 2018-08-28T11:58:27Z
has_accepted_license: '1'
intvolume: ' 96'
issue: '25'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted
3C–SiC (001)
type: journal_article
user_id: '55706'
volume: 96
year: '2010'
...
---
_id: '4200'
abstract:
- lang: eng
text: "We studied the Fulde-Ferrell-Larkin-Ovchinnikov-type state established due
to the proximity effect in superconducting\r\nNb/Cu_41Ni_59 bilayers. Using a
special wedge-type deposition technique, series of 20–35\r\nsamples could be fabricated
by magnetron sputtering during one run. The layer thickness of only a few\r\nnanometers,
the composition of the alloy, and the quality of interfaces were controlled by
Rutherford backscattering\r\nspectrometry, high-resolution transmission electron
microscopy, and Auger spectroscopy. The magnetic\r\nproperties of the ferromagnetic
alloy layer were characterized with superconducting quantum interference\r\ndevice
magnetometry. These studies yield precise information about the thickness and
demonstrate the homogeneity\r\nof the alloy composition and magnetic properties
along the sample series. The dependencies of the\r\ncritical temperature on the
Nb and Cu41Ni59 layer thickness, T_c(d_S) and T_c(d_F), were investigated for
constant\r\nthickness d_F of the magnetic alloy layer and d_S of the superconducting
layer, respectively. All types of\r\nnonmonotonic behaviors of T_c versus d_F
predicted by the theory could be realized experimentally, from\r\nreentrant superconducting
behavior with a broad extinction region to a slight suppression of superconductivity\r\nwith
a shallow minimum. Even a double extinction of superconductivity was observed,
giving evidence for the\r\nmultiple reentrant behavior predicted by theory. All
critical temperature curves were fitted with suitable sets of\r\nparameters. Then,
T_c(d_F) diagrams of a hypothetical ferromagnet/superconductor/ferromagnet spin-switch
core\r\nstructure were calculated using these parameters. Finally, superconducting
spin-switch fabrication issues are\r\ndiscussed in detail in view of the achieved
results."
article_number: '054517'
article_type: original
author:
- first_name: V. I.
full_name: Zdravkov, V. I.
last_name: Zdravkov
- first_name: J.
full_name: Kehrle, J.
last_name: Kehrle
- first_name: G.
full_name: Obermeier, G.
last_name: Obermeier
- first_name: S.
full_name: Gsell, S.
last_name: Gsell
- first_name: M.
full_name: Schreck, M.
last_name: Schreck
- first_name: C.
full_name: Müller, C.
last_name: Müller
- first_name: H.-A.
full_name: Krug von Nidda, H.-A.
last_name: Krug von Nidda
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: J.
full_name: Moosburger-Will, J.
last_name: Moosburger-Will
- first_name: E.
full_name: Nold, E.
last_name: Nold
- first_name: R.
full_name: Morari, R.
last_name: Morari
- first_name: V. V.
full_name: Ryazanov, V. V.
last_name: Ryazanov
- first_name: A. S.
full_name: Sidorenko, A. S.
last_name: Sidorenko
- first_name: S.
full_name: Horn, S.
last_name: Horn
- first_name: R.
full_name: Tidecks, R.
last_name: Tidecks
- first_name: L. R.
full_name: Tagirov, L. R.
last_name: Tagirov
citation:
ama: Zdravkov VI, Kehrle J, Obermeier G, et al. Reentrant superconductivity in superconductor/ferromagnetic-alloy
bilayers. Physical Review B. 2010;82(5). doi:10.1103/physrevb.82.054517
apa: Zdravkov, V. I., Kehrle, J., Obermeier, G., Gsell, S., Schreck, M., Müller,
C., … Tagirov, L. R. (2010). Reentrant superconductivity in superconductor/ferromagnetic-alloy
bilayers. Physical Review B, 82(5). https://doi.org/10.1103/physrevb.82.054517
bibtex: '@article{Zdravkov_Kehrle_Obermeier_Gsell_Schreck_Müller_Krug von Nidda_Lindner_Moosburger-Will_Nold_et
al._2010, title={Reentrant superconductivity in superconductor/ferromagnetic-alloy
bilayers}, volume={82}, DOI={10.1103/physrevb.82.054517},
number={5054517}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Zdravkov, V. I. and Kehrle, J. and Obermeier, G. and Gsell, S.
and Schreck, M. and Müller, C. and Krug von Nidda, H.-A. and Lindner, Jörg and
Moosburger-Will, J. and Nold, E. and et al.}, year={2010} }'
chicago: Zdravkov, V. I., J. Kehrle, G. Obermeier, S. Gsell, M. Schreck, C. Müller,
H.-A. Krug von Nidda, et al. “Reentrant Superconductivity in Superconductor/Ferromagnetic-Alloy
Bilayers.” Physical Review B 82, no. 5 (2010). https://doi.org/10.1103/physrevb.82.054517.
ieee: V. I. Zdravkov et al., “Reentrant superconductivity in superconductor/ferromagnetic-alloy
bilayers,” Physical Review B, vol. 82, no. 5, 2010.
mla: Zdravkov, V. I., et al. “Reentrant Superconductivity in Superconductor/Ferromagnetic-Alloy
Bilayers.” Physical Review B, vol. 82, no. 5, 054517, American Physical
Society (APS), 2010, doi:10.1103/physrevb.82.054517.
short: V.I. Zdravkov, J. Kehrle, G. Obermeier, S. Gsell, M. Schreck, C. Müller,
H.-A. Krug von Nidda, J. Lindner, J. Moosburger-Will, E. Nold, R. Morari, V.V.
Ryazanov, A.S. Sidorenko, S. Horn, R. Tidecks, L.R. Tagirov, Physical Review B
82 (2010).
date_created: 2018-08-28T12:22:11Z
date_updated: 2022-01-06T07:00:34Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1103/physrevb.82.054517
extern: '1'
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:23:29Z
date_updated: 2018-08-28T12:23:29Z
file_id: '4201'
file_name: Reentrant superconductivity in superconductor-ferromagnetic-alloy bilayers.pdf
file_size: 723266
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:23:29Z
has_accepted_license: '1'
intvolume: ' 82'
issue: '5'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers
type: journal_article
user_id: '55706'
volume: 82
year: '2010'
...
---
_id: '4202'
abstract:
- lang: eng
text: "Unintentional doping in nonpolar a-plane \x01112¯0\x02 gallium nitride \x01GaN\x02
grown on r-plane \x0111¯02\x02\r\nsapphire using a three-dimensional \x013D\x02–two-dimensional
\x012D\x02 growth method has been\r\ncharacterized. For both 2D only and 3D–2D
growth, the presence of an unintentionally doped region\r\nadjacent to the GaN/sapphire
interface is observed by scanning capacitance microscopy \x01SCM\x02. The\r\naverage
width of this unintentionally doped layer is found to increase with increasing
3D growth\r\ntime. By using an intentionally doped GaN:Si staircase structure
for calibration, it is shown that the\r\nunintentionally doped region has an average
carrier concentration of \x012.5\x010.3\x02\x021018 cm−3. SCM\r\nalso reveals
the presence of unintentionally doped features extending at 60° from the GaN/sapphire\r\ninterface.
The observation of decreasing carrier concentration with distance from the GaN/sapphire\r\ninterface
along these features may suggest that the unintentional doping arises from oxygen\r\ndiffusion
from the sapphire substrate. Low temperature cathodoluminescence spectra reveal\r\nemission
peaks at 3.41 and 3.30 eV, which are believed to originate from basal plane stacking
faults\r\n\x01BSFs\x02 and prismatic stacking faults \x01PSFs\x02, respectively.
It is shown that the inclined features\r\nextending from the GaN/sapphire interface
exhibit both enhanced BSF and PSF emission. We\r\nsuggest that enhanced unintentional
doping occurs in regions around PSFs. Where BSFs intersect\r\nthis doped material
their emission is also enhanced due to reduced nonradiative recombination.\r\nTransmission
electron microscopy confirms the presence of PSFs extending through the film at
60°\r\nfrom the GaN/sapphire interface."
article_number: '023503'
article_type: original
author:
- first_name: Tongtong
full_name: Zhu, Tongtong
last_name: Zhu
- first_name: Carol F.
full_name: Johnston, Carol F.
last_name: Johnston
- first_name: Maik
full_name: Häberlen, Maik
last_name: Häberlen
- first_name: Menno J.
full_name: Kappers, Menno J.
last_name: Kappers
- first_name: Rachel A.
full_name: Oliver, Rachel A.
last_name: Oliver
citation:
ama: Zhu T, Johnston CF, Häberlen M, Kappers MJ, Oliver RA. Characterization of
unintentional doping in nonpolar GaN. Journal of Applied Physics. 2010;107(2).
doi:10.1063/1.3284944
apa: Zhu, T., Johnston, C. F., Häberlen, M., Kappers, M. J., & Oliver, R. A.
(2010). Characterization of unintentional doping in nonpolar GaN. Journal of
Applied Physics, 107(2). https://doi.org/10.1063/1.3284944
bibtex: '@article{Zhu_Johnston_Häberlen_Kappers_Oliver_2010, title={Characterization
of unintentional doping in nonpolar GaN}, volume={107}, DOI={10.1063/1.3284944},
number={2023503}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Zhu, Tongtong and Johnston, Carol F. and Häberlen, Maik and Kappers, Menno
J. and Oliver, Rachel A.}, year={2010} }'
chicago: Zhu, Tongtong, Carol F. Johnston, Maik Häberlen, Menno J. Kappers, and
Rachel A. Oliver. “Characterization of Unintentional Doping in Nonpolar GaN.”
Journal of Applied Physics 107, no. 2 (2010). https://doi.org/10.1063/1.3284944.
ieee: T. Zhu, C. F. Johnston, M. Häberlen, M. J. Kappers, and R. A. Oliver, “Characterization
of unintentional doping in nonpolar GaN,” Journal of Applied Physics, vol.
107, no. 2, 2010.
mla: Zhu, Tongtong, et al. “Characterization of Unintentional Doping in Nonpolar
GaN.” Journal of Applied Physics, vol. 107, no. 2, 023503, AIP Publishing,
2010, doi:10.1063/1.3284944.
short: T. Zhu, C.F. Johnston, M. Häberlen, M.J. Kappers, R.A. Oliver, Journal of
Applied Physics 107 (2010).
date_created: 2018-08-28T12:27:34Z
date_updated: 2022-01-06T07:00:34Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1063/1.3284944
extern: '1'
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:28:22Z
date_updated: 2018-08-28T12:28:22Z
file_id: '4203'
file_name: Characterization of unintentional doping in nonpolar GaN.pdf
file_size: 688753
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:28:22Z
has_accepted_license: '1'
intvolume: ' 107'
issue: '2'
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Characterization of unintentional doping in nonpolar GaN
type: journal_article
user_id: '55706'
volume: 107
year: '2010'
...
---
_id: '4204'
abstract:
- lang: eng
text: "A comparative theoretical investigation of carbon interstitials in silicon
is presented. Calculations using\r\nclassical potentials are compared to first-principles
density-functional theory calculations of the geometries,\r\nformation, and activation
energies of the carbon dumbbell interstitial, showing the importance of a quantummechanical\r\ndescription
of this system. In contrast to previous studies, the present first-principles
calculations of\r\nthe interstitial carbon migration path yield an activation
energy that excellently matches the experiment. The\r\nbond-centered interstitial
configuration shows a net magnetization of two electrons, illustrating the need
for\r\nspin-polarized calculations."
article_number: '094110'
article_type: original
author:
- first_name: F.
full_name: Zirkelbach, F.
last_name: Zirkelbach
- first_name: B.
full_name: Stritzker, B.
last_name: Stritzker
- first_name: K.
full_name: Nordlund, K.
last_name: Nordlund
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: W. G.
full_name: Schmidt, W. G.
last_name: Schmidt
- first_name: E.
full_name: Rauls, E.
last_name: Rauls
citation:
ama: Zirkelbach F, Stritzker B, Nordlund K, Lindner J, Schmidt WG, Rauls E. Defects
in carbon implanted silicon calculated by classical potentials and first-principles
methods. Physical Review B. 2010;82(9). doi:10.1103/physrevb.82.094110
apa: Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J., Schmidt, W. G., &
Rauls, E. (2010). Defects in carbon implanted silicon calculated by classical
potentials and first-principles methods. Physical Review B, 82(9).
https://doi.org/10.1103/physrevb.82.094110
bibtex: '@article{Zirkelbach_Stritzker_Nordlund_Lindner_Schmidt_Rauls_2010, title={Defects
in carbon implanted silicon calculated by classical potentials and first-principles
methods}, volume={82}, DOI={10.1103/physrevb.82.094110},
number={9094110}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Lindner,
Jörg and Schmidt, W. G. and Rauls, E.}, year={2010} }'
chicago: Zirkelbach, F., B. Stritzker, K. Nordlund, Jörg Lindner, W. G. Schmidt,
and E. Rauls. “Defects in Carbon Implanted Silicon Calculated by Classical Potentials
and First-Principles Methods.” Physical Review B 82, no. 9 (2010). https://doi.org/10.1103/physrevb.82.094110.
ieee: F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W. G. Schmidt, and E.
Rauls, “Defects in carbon implanted silicon calculated by classical potentials
and first-principles methods,” Physical Review B, vol. 82, no. 9, 2010.
mla: Zirkelbach, F., et al. “Defects in Carbon Implanted Silicon Calculated by Classical
Potentials and First-Principles Methods.” Physical Review B, vol. 82, no.
9, 094110, American Physical Society (APS), 2010, doi:10.1103/physrevb.82.094110.
short: F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W.G. Schmidt, E. Rauls,
Physical Review B 82 (2010).
date_created: 2018-08-28T12:30:15Z
date_updated: 2022-01-06T07:00:35Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1103/physrevb.82.094110
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:31:01Z
date_updated: 2018-08-28T12:31:01Z
file_id: '4205'
file_name: Defects in Carbon implanted Silicon calculated by classical potentials
and first principles methods.pdf
file_size: 238023
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:31:01Z
has_accepted_license: '1'
intvolume: ' 82'
issue: '9'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Defects in carbon implanted silicon calculated by classical potentials and
first-principles methods
type: journal_article
user_id: '55706'
volume: 82
year: '2010'
...
---
_id: '4206'
author:
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Lindner J. Advanced topics and applications of Transmission Electron Microscopy,
Part I-II. In: ; 2010.'
apa: Lindner, J. (2010). Advanced topics and applications of Transmission Electron
Microscopy, Part I-II. Presented at the Guest Lectures at Departamento de Fisica
Applicada, Master de Materiales Avanzados y Nanotecnologias , Universidad Autónoma
de Madrid (Spain).
bibtex: '@inproceedings{Lindner_2010, title={Advanced topics and applications of
Transmission Electron Microscopy, Part I-II}, author={Lindner, Jörg}, year={2010}
}'
chicago: Lindner, Jörg. “Advanced Topics and Applications of Transmission Electron
Microscopy, Part I-II,” 2010.
ieee: J. Lindner, “Advanced topics and applications of Transmission Electron Microscopy,
Part I-II,” presented at the Guest Lectures at Departamento de Fisica Applicada,
Master de Materiales Avanzados y Nanotecnologias , Universidad Autónoma de Madrid
(Spain), 2010.
mla: Lindner, Jörg. Advanced Topics and Applications of Transmission Electron
Microscopy, Part I-II. 2010.
short: 'J. Lindner, in: 2010.'
conference:
end_date: 2010-04-16
location: Universidad Autónoma de Madrid (Spain)
name: 'Guest Lectures at Departamento de Fisica Applicada, Master de Materiales
Avanzados y Nanotecnologias '
start_date: 2010-04-14
date_created: 2018-08-28T12:34:11Z
date_updated: 2022-01-06T07:00:35Z
department:
- _id: '15'
- _id: '286'
status: public
title: Advanced topics and applications of Transmission Electron Microscopy, Part
I-II
type: conference_abstract
user_id: '55706'
year: '2010'
...
---
_id: '4207'
citation:
ama: Ila D, Kishimoto N, Lindner J, Baglin J, eds. Ion Beams and Nano-Engineering.
Vol 1181. MRS Symposium Proceedings ; 2010.
apa: 'Ila, D., Kishimoto, N., Lindner, J., & Baglin, J. (Eds.). (2010). Ion
Beams and Nano-Engineering (Vol. 1181). Presented at the MRS Spring Meeting
2009, San Francisco (USA): MRS Symposium Proceedings .'
bibtex: '@book{Ila_Kishimoto_Lindner_Baglin_2010, title={Ion Beams and Nano-Engineering},
volume={1181}, publisher={MRS Symposium Proceedings }, year={2010} }'
chicago: Ila, D., N. Kishimoto, Jörg Lindner, and J. Baglin, eds. Ion Beams
and Nano-Engineering. Vol. 1181. MRS Symposium Proceedings , 2010.
ieee: D. Ila, N. Kishimoto, J. Lindner, and J. Baglin, Eds., Ion Beams and Nano-Engineering,
vol. 1181. MRS Symposium Proceedings , 2010.
mla: Ila, D., et al., editors. Ion Beams and Nano-Engineering. Vol. 1181,
MRS Symposium Proceedings , 2010.
short: D. Ila, N. Kishimoto, J. Lindner, J. Baglin, eds., Ion Beams and Nano-Engineering,
MRS Symposium Proceedings , 2010.
conference:
location: San Francisco (USA)
name: MRS Spring Meeting 2009
date_created: 2018-08-28T12:38:16Z
date_updated: 2022-01-06T07:00:35Z
department:
- _id: '15'
- _id: '286'
editor:
- first_name: D.
full_name: Ila, D.
last_name: Ila
- first_name: 'N. '
full_name: 'Kishimoto, N. '
last_name: Kishimoto
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: J.
full_name: Baglin, J.
last_name: Baglin
intvolume: ' 1181'
language:
- iso: eng
publication_identifier:
isbn:
- 978-1-60511-154-4
publication_status: published
publisher: 'MRS Symposium Proceedings '
status: public
title: Ion Beams and Nano-Engineering
type: book_editor
user_id: '55706'
volume: 1181
year: '2010'
...
---
_id: '4208'
abstract:
- lang: eng
text: Growth of GaN on Si(111) potentially enables cost efficient manufacturing
of optoelectronic devices due to the possibility of using cheap large area substrates.
However, GaN layers grown on Si(111) substrates suffer from high tensile stress
that can lead to cracking at layer thicknesses exceeding 1 μm. Another challenge
is the high dislocation density of GaN layers grown on Si(111) which is detrimental
to device performance. In this paper we show that a step graded AlGaN buffer layer
can compensate tensile stress, avoiding cracking, and at the same time reduce
the dislocation density. An additional SiNx interlayer in the GaN layer is shown
to further reduce the dislocation density down to the high 108 /cm². Weak beam
dark field TEM was used to study the dislocation reduction in cross sectional
samples and for comparison of the step graded AlGaN buffer layer structure to
a continuously graded one. STEM ADF was used to determine the exact location of
dislocation bending with respect to the position of the interface.
article_number: '012017'
article_type: original
author:
- first_name: M
full_name: Häberlen, M
last_name: Häberlen
- first_name: D
full_name: Zhu, D
last_name: Zhu
- first_name: C
full_name: McAleese, C
last_name: McAleese
- first_name: M J
full_name: Kappers, M J
last_name: Kappers
- first_name: C J
full_name: Humphreys, C J
last_name: Humphreys
citation:
ama: 'Häberlen M, Zhu D, McAleese C, Kappers MJ, Humphreys CJ. Dislocation reduction
in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers. Journal of
Physics: Conference Series. 2010;209. doi:10.1088/1742-6596/209/1/012017'
apa: 'Häberlen, M., Zhu, D., McAleese, C., Kappers, M. J., & Humphreys, C. J.
(2010). Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand
AlGaN layers. Journal of Physics: Conference Series, 209. https://doi.org/10.1088/1742-6596/209/1/012017'
bibtex: '@article{Häberlen_Zhu_McAleese_Kappers_Humphreys_2010, title={Dislocation
reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers}, volume={209},
DOI={10.1088/1742-6596/209/1/012017},
number={012017}, journal={Journal of Physics: Conference Series}, publisher={IOP
Publishing}, author={Häberlen, M and Zhu, D and McAleese, C and Kappers, M J and
Humphreys, C J}, year={2010} }'
chicago: 'Häberlen, M, D Zhu, C McAleese, M J Kappers, and C J Humphreys. “Dislocation
Reduction in MOVPE Grown GaN Layers on (111)Si Using SiNxand AlGaN Layers.” Journal
of Physics: Conference Series 209 (2010). https://doi.org/10.1088/1742-6596/209/1/012017.'
ieee: 'M. Häberlen, D. Zhu, C. McAleese, M. J. Kappers, and C. J. Humphreys, “Dislocation
reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers,” Journal
of Physics: Conference Series, vol. 209, 2010.'
mla: 'Häberlen, M., et al. “Dislocation Reduction in MOVPE Grown GaN Layers on (111)Si
Using SiNxand AlGaN Layers.” Journal of Physics: Conference Series, vol.
209, 012017, IOP Publishing, 2010, doi:10.1088/1742-6596/209/1/012017.'
short: 'M. Häberlen, D. Zhu, C. McAleese, M.J. Kappers, C.J. Humphreys, Journal
of Physics: Conference Series 209 (2010).'
date_created: 2018-08-28T12:39:31Z
date_updated: 2022-01-06T07:00:36Z
ddc:
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department:
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doi: 10.1088/1742-6596/209/1/012017
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date_created: 2018-08-28T12:40:20Z
date_updated: 2018-08-28T12:40:20Z
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file_name: Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNx
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language:
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publication: 'Journal of Physics: Conference Series'
publication_identifier:
issn:
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publication_status: published
publisher: IOP Publishing
status: public
title: Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN
layers
type: journal_article
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volume: 209
year: '2010'
...