---
_id: '4176'
abstract:
- lang: eng
  text: A microscopic theory that describes injection currents in GaAs quantum wells
    is presented. 14 × 14 band k.p theory is used to compute the band structure including
    anisotropy and spin-orbit interaction. Transient injection currents are obtained
    via numerical solutions of the semiconductor Bloch equations. Depending on the
    growth direction of the considered quantum well system and the propagation and
    polarization directions of the incident light beam, it is possible to generate
    charge and/or spin photocurrents on ultrashort time scales. The dependence of
    the photocurrents on the excitation conditions is computed and discussed.
author:
- first_name: Huynh Thanh
  full_name: Duc, Huynh Thanh
  last_name: Duc
- first_name: Jens
  full_name: Förstner, Jens
  id: '158'
  last_name: Förstner
  orcid: 0000-0001-7059-9862
- first_name: Torsten
  full_name: Meier, Torsten
  id: '344'
  last_name: Meier
  orcid: 0000-0001-8864-2072
citation:
  ama: 'Duc HT, Förstner J, Meier T. Microscopic theoretical analysis of optically
    generated injection currents in semiconductor quantum wells. In: Song J-J, Tsen
    K-T, Betz M, Elezzabi AY, eds. <i>Ultrafast Phenomena in Semiconductors and Nanostructure
    Materials XIV</i>. Vol 7600. SPIE Proceedings. SPIE; 2010:76000S-76000S - 9. doi:<a
    href="https://doi.org/10.1117/12.840388">10.1117/12.840388</a>'
  apa: Duc, H. T., Förstner, J., &#38; Meier, T. (2010). Microscopic theoretical analysis
    of optically generated injection currents in semiconductor quantum wells. In J.-J.
    Song, K.-T. Tsen, M. Betz, &#38; A. Y. Elezzabi (Eds.), <i>Ultrafast Phenomena
    in Semiconductors and Nanostructure Materials XIV</i> (Vol. 7600, pp. 76000S-76000S
    – 9). SPIE. <a href="https://doi.org/10.1117/12.840388">https://doi.org/10.1117/12.840388</a>
  bibtex: '@inproceedings{Duc_Förstner_Meier_2010, series={SPIE Proceedings}, title={Microscopic
    theoretical analysis of optically generated injection currents in semiconductor
    quantum wells}, volume={7600}, DOI={<a href="https://doi.org/10.1117/12.840388">10.1117/12.840388</a>},
    booktitle={Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV},
    publisher={SPIE}, author={Duc, Huynh Thanh and Förstner, Jens and Meier, Torsten},
    editor={Song, Jin-Joo and Tsen, Kong-Thon and Betz, Markus and Elezzabi, Abdulhakem
    Y.}, year={2010}, pages={76000S-76000S–9}, collection={SPIE Proceedings} }'
  chicago: Duc, Huynh Thanh, Jens Förstner, and Torsten Meier. “Microscopic Theoretical
    Analysis of Optically Generated Injection Currents in Semiconductor Quantum Wells.”
    In <i>Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV</i>,
    edited by Jin-Joo Song, Kong-Thon Tsen, Markus Betz, and Abdulhakem Y. Elezzabi,
    7600:76000S-76000S – 9. SPIE Proceedings. SPIE, 2010. <a href="https://doi.org/10.1117/12.840388">https://doi.org/10.1117/12.840388</a>.
  ieee: 'H. T. Duc, J. Förstner, and T. Meier, “Microscopic theoretical analysis of
    optically generated injection currents in semiconductor quantum wells,” in <i>Ultrafast
    Phenomena in Semiconductors and Nanostructure Materials XIV</i>, 2010, vol. 7600,
    pp. 76000S-76000S–9, doi: <a href="https://doi.org/10.1117/12.840388">10.1117/12.840388</a>.'
  mla: Duc, Huynh Thanh, et al. “Microscopic Theoretical Analysis of Optically Generated
    Injection Currents in Semiconductor Quantum Wells.” <i>Ultrafast Phenomena in
    Semiconductors and Nanostructure Materials XIV</i>, edited by Jin-Joo Song et
    al., vol. 7600, SPIE, 2010, pp. 76000S-76000S – 9, doi:<a href="https://doi.org/10.1117/12.840388">10.1117/12.840388</a>.
  short: 'H.T. Duc, J. Förstner, T. Meier, in: J.-J. Song, K.-T. Tsen, M. Betz, A.Y.
    Elezzabi (Eds.), Ultrafast Phenomena in Semiconductors and Nanostructure Materials
    XIV, SPIE, 2010, pp. 76000S-76000S–9.'
date_created: 2018-08-28T09:00:53Z
date_updated: 2023-04-19T11:07:47Z
department:
- _id: '15'
- _id: '293'
- _id: '170'
- _id: '230'
doi: 10.1117/12.840388
editor:
- first_name: Jin-Joo
  full_name: Song, Jin-Joo
  last_name: Song
- first_name: Kong-Thon
  full_name: Tsen, Kong-Thon
  last_name: Tsen
- first_name: Markus
  full_name: Betz, Markus
  last_name: Betz
- first_name: Abdulhakem Y.
  full_name: Elezzabi, Abdulhakem Y.
  last_name: Elezzabi
intvolume: '      7600'
keyword:
- tet_topic_qw
language:
- iso: eng
page: 76000S-76000S-9
publication: Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV
publication_status: published
publisher: SPIE
series_title: SPIE Proceedings
status: public
title: Microscopic theoretical analysis of optically generated injection currents
  in semiconductor quantum wells
type: conference
user_id: '49063'
volume: 7600
year: '2010'
...
---
_id: '44063'
abstract:
- lang: eng
  text: We present an analysis of the coupling between photonic crystal cavities in
    different geometries. Inline‐, side‐ and angle‐coupled L3‐geometries are investigated
    numerically in three dimensions. Asymmetric mode splitting of the fundamental
    mode for the L3‐cavity is shown for all geometrical setups evidencing for strong
    cavity‐cavity interactions. The coupling efficiency for the fundamental mode is
    shown to be best for a 30° angle between the cavity‐centers due to the direction
    of in‐plane leackage out of the cavites.
article_number: 46-48
author:
- first_name: Torsten
  full_name: Meier, Torsten
  id: '344'
  last_name: Meier
  orcid: 0000-0001-8864-2072
- first_name: S.
  full_name: Declair, S.
  last_name: Declair
- first_name: J.
  full_name: Förstner, J.
  last_name: Förstner
citation:
  ama: Meier T, Declair S, Förstner J. Numerical Analysis of Coupled Photonic Crystal
    Cavities. <i>AIP Conference Proceedings</i>. 2010;1291(46). doi:<a href="https://doi.org/10.1063/1.3506125">10.1063/1.3506125</a>
  apa: Meier, T., Declair, S., &#38; Förstner, J. (2010). Numerical Analysis of Coupled
    Photonic Crystal Cavities. <i>AIP Conference Proceedings</i>, <i>1291</i>(46),
    Article 46–48. <a href="https://doi.org/10.1063/1.3506125">https://doi.org/10.1063/1.3506125</a>
  bibtex: '@article{Meier_Declair_Förstner_2010, title={Numerical Analysis of Coupled
    Photonic Crystal Cavities}, volume={1291}, DOI={<a href="https://doi.org/10.1063/1.3506125">10.1063/1.3506125</a>},
    number={4646–48}, journal={AIP Conference Proceedings}, publisher={American Institute
    of Physics}, author={Meier, Torsten and Declair, S. and Förstner, J.}, year={2010}
    }'
  chicago: Meier, Torsten, S. Declair, and J. Förstner. “Numerical Analysis of Coupled
    Photonic Crystal Cavities.” <i>AIP Conference Proceedings</i> 1291, no. 46 (2010).
    <a href="https://doi.org/10.1063/1.3506125">https://doi.org/10.1063/1.3506125</a>.
  ieee: 'T. Meier, S. Declair, and J. Förstner, “Numerical Analysis of Coupled Photonic
    Crystal Cavities,” <i>AIP Conference Proceedings</i>, vol. 1291, no. 46, Art.
    no. 46–48, 2010, doi: <a href="https://doi.org/10.1063/1.3506125">10.1063/1.3506125</a>.'
  mla: Meier, Torsten, et al. “Numerical Analysis of Coupled Photonic Crystal Cavities.”
    <i>AIP Conference Proceedings</i>, vol. 1291, no. 46, 46–48, American Institute
    of Physics, 2010, doi:<a href="https://doi.org/10.1063/1.3506125">10.1063/1.3506125</a>.
  short: T. Meier, S. Declair, J. Förstner, AIP Conference Proceedings 1291 (2010).
date_created: 2023-04-19T10:57:09Z
date_updated: 2023-04-19T10:57:12Z
department:
- _id: '293'
doi: 10.1063/1.3506125
intvolume: '      1291'
issue: '46 '
language:
- iso: eng
main_file_link:
- url: https://aip.scitation.org/doi/abs/10.1063/1.3506125
publication: AIP Conference Proceedings
publication_status: published
publisher: American Institute of Physics
status: public
title: Numerical Analysis of Coupled Photonic Crystal Cavities
type: journal_article
user_id: '49063'
volume: 1291
year: '2010'
...
---
_id: '24980'
abstract:
- lang: eng
  text: We discuss transport and localization properties on the insulating side of
    the disorder dominated superconductor-insulator transition, described in terms
    of the dirty boson model. Analyzing the spectral properties of the interacting
    bosons in the absence of phonons, we argue that the Bose glass phase admits three
    distinct regimes. For strongest disorder the boson system is a fully localized,
    perfect insulator at any temperature. At smaller disorder, only the low temperature
    phase exhibits perfect insulation while delocalization takes place above a finite
    temperature. We argue that a third phase must intervene between these perfect
    insulators and the superconductor. This conducting Bose glass phase is characterized
    by a mobility edge in the many body spectrum, located at finite energy above the
    ground state. In this insulating regime purely electronically activated transport
    occurs, with a conductivity following an Arrhenius law at asymptotically low temperatures,
    while a tendency to superactivation is predicted at higher T. These predictions
    are in good agreement with recent transport experiments in highly disordered films
    of superconducting materials.
author:
- first_name: N.
  full_name: Gögh, N.
  last_name: Gögh
- first_name: P.
  full_name: Thomas, P.
  last_name: Thomas
- first_name: I.
  full_name: Kuznetsova, I.
  last_name: Kuznetsova
- first_name: Torsten
  full_name: Meier, Torsten
  id: '344'
  last_name: Meier
  orcid: 0000-0001-8864-2072
- first_name: I.
  full_name: Varga, I.
  last_name: Varga
citation:
  ama: 'Gögh N, Thomas P, Kuznetsova I, Meier T, Varga I. Localization of excitons
    in weakly disordered semiconductor structures: A model study. <i>Annalen der Physik</i>.
    2010;18(12):905-909. doi:<a href="https://doi.org/10.1002/andp.20095211219">10.1002/andp.20095211219</a>'
  apa: 'Gögh, N., Thomas, P., Kuznetsova, I., Meier, T., &#38; Varga, I. (2010). Localization
    of excitons in weakly disordered semiconductor structures: A model study. <i>Annalen
    Der Physik</i>, <i>18</i>(12), 905–909. <a href="https://doi.org/10.1002/andp.20095211219">https://doi.org/10.1002/andp.20095211219</a>'
  bibtex: '@article{Gögh_Thomas_Kuznetsova_Meier_Varga_2010, title={Localization of
    excitons in weakly disordered semiconductor structures: A model study}, volume={18},
    DOI={<a href="https://doi.org/10.1002/andp.20095211219">10.1002/andp.20095211219</a>},
    number={12}, journal={Annalen der Physik}, author={Gögh, N. and Thomas, P. and
    Kuznetsova, I. and Meier, Torsten and Varga, I.}, year={2010}, pages={905–909}
    }'
  chicago: 'Gögh, N., P. Thomas, I. Kuznetsova, Torsten Meier, and I. Varga. “Localization
    of Excitons in Weakly Disordered Semiconductor Structures: A Model Study.” <i>Annalen
    Der Physik</i> 18, no. 12 (2010): 905–9. <a href="https://doi.org/10.1002/andp.20095211219">https://doi.org/10.1002/andp.20095211219</a>.'
  ieee: 'N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, and I. Varga, “Localization
    of excitons in weakly disordered semiconductor structures: A model study,” <i>Annalen
    der Physik</i>, vol. 18, no. 12, pp. 905–909, 2010, doi: <a href="https://doi.org/10.1002/andp.20095211219">10.1002/andp.20095211219</a>.'
  mla: 'Gögh, N., et al. “Localization of Excitons in Weakly Disordered Semiconductor
    Structures: A Model Study.” <i>Annalen Der Physik</i>, vol. 18, no. 12, 2010,
    pp. 905–09, doi:<a href="https://doi.org/10.1002/andp.20095211219">10.1002/andp.20095211219</a>.'
  short: N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, I. Varga, Annalen Der Physik
    18 (2010) 905–909.
date_created: 2021-09-24T08:06:30Z
date_updated: 2023-04-19T11:13:00Z
department:
- _id: '15'
- _id: '170'
- _id: '293'
- _id: '230'
doi: 10.1002/andp.20095211219
intvolume: '        18'
issue: '12'
language:
- iso: eng
page: 905-909
publication: Annalen der Physik
publication_identifier:
  issn:
  - 0003-3804
  - 1521-3889
publication_status: published
status: public
title: 'Localization of excitons in weakly disordered semiconductor structures: A
  model study'
type: journal_article
user_id: '49063'
volume: 18
year: '2010'
...
---
_id: '23480'
abstract:
- lang: eng
  text: We discuss transport and localization properties on the insulating side of
    the disorder dominated superconductor-insulator transition, described in terms
    of the dirty boson model. Analyzing the spectral properties of the interacting
    bosons in the absence of phonons, we argue that the Bose glass phase admits three
    distinct regimes. For strongest disorder the boson system is a fully localized,
    perfect insulator at any temperature. At smaller disorder, only the low temperature
    phase exhibits perfect insulation while delocalization takes place above a finite
    temperature. We argue that a third phase must intervene between these perfect
    insulators and the superconductor. This conducting Bose glass phase is characterized
    by a mobility edge in the many body spectrum, located at finite energy above the
    ground state. In this insulating regime purely electronically activated transport
    occurs, with a conductivity following an Arrhenius law at asymptotically low temperatures,
    while a tendency to superactivation is predicted at higher T. These predictions
    are in good agreement with recent transport experiments in highly disordered films
    of superconducting materials.
author:
- first_name: N.
  full_name: Gögh, N.
  last_name: Gögh
- first_name: P.
  full_name: Thomas, P.
  last_name: Thomas
- first_name: I.
  full_name: Kuznetsova, I.
  last_name: Kuznetsova
- first_name: Torsten
  full_name: Meier, Torsten
  id: '344'
  last_name: Meier
  orcid: 0000-0001-8864-2072
- first_name: I.
  full_name: Varga, I.
  last_name: Varga
citation:
  ama: 'Gögh N, Thomas P, Kuznetsova I, Meier T, Varga I. Localization of excitons
    in weakly disordered semiconductor structures: A model study. <i>Annalen der Physik</i>.
    2010;(12):905-909. doi:<a href="https://doi.org/10.1002/andp.200910382">10.1002/andp.200910382</a>'
  apa: 'Gögh, N., Thomas, P., Kuznetsova, I., Meier, T., &#38; Varga, I. (2010). Localization
    of excitons in weakly disordered semiconductor structures: A model study. <i>Annalen
    Der Physik</i>, <i>12</i>, 905–909. <a href="https://doi.org/10.1002/andp.200910382">https://doi.org/10.1002/andp.200910382</a>'
  bibtex: '@article{Gögh_Thomas_Kuznetsova_Meier_Varga_2010, title={Localization of
    excitons in weakly disordered semiconductor structures: A model study}, DOI={<a
    href="https://doi.org/10.1002/andp.200910382">10.1002/andp.200910382</a>}, number={12},
    journal={Annalen der Physik}, author={Gögh, N. and Thomas, P. and Kuznetsova,
    I. and Meier, Torsten and Varga, I.}, year={2010}, pages={905–909} }'
  chicago: 'Gögh, N., P. Thomas, I. Kuznetsova, Torsten Meier, and I. Varga. “Localization
    of Excitons in Weakly Disordered Semiconductor Structures: A Model Study.” <i>Annalen
    Der Physik</i>, no. 12 (2010): 905–9. <a href="https://doi.org/10.1002/andp.200910382">https://doi.org/10.1002/andp.200910382</a>.'
  ieee: 'N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, and I. Varga, “Localization
    of excitons in weakly disordered semiconductor structures: A model study,” <i>Annalen
    der Physik</i>, no. 12, pp. 905–909, 2010, doi: <a href="https://doi.org/10.1002/andp.200910382">10.1002/andp.200910382</a>.'
  mla: 'Gögh, N., et al. “Localization of Excitons in Weakly Disordered Semiconductor
    Structures: A Model Study.” <i>Annalen Der Physik</i>, no. 12, 2010, pp. 905–09,
    doi:<a href="https://doi.org/10.1002/andp.200910382">10.1002/andp.200910382</a>.'
  short: N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, I. Varga, Annalen Der Physik
    (2010) 905–909.
date_created: 2021-08-24T08:58:35Z
date_updated: 2023-04-19T11:12:57Z
department:
- _id: '15'
- _id: '170'
- _id: '293'
- _id: '230'
doi: 10.1002/andp.200910382
issue: '12'
language:
- iso: eng
page: 905-909
publication: Annalen der Physik
publication_identifier:
  issn:
  - 0003-3804
  - 1521-3889
publication_status: published
status: public
title: 'Localization of excitons in weakly disordered semiconductor structures: A
  model study'
type: journal_article
user_id: '49063'
year: '2010'
...
---
_id: '18558'
abstract:
- lang: eng
  text: We present an implementation of the GW approximation for the electronic self-energy
    within the full-potential linearized augmented-plane-wave (FLAPW) method. The
    algorithm uses an all-electron mixed product basis for the representation of response
    matrices and related quantities. This basis is derived from the FLAPW basis and
    is exact for wave-function products. The correlation part of the self-energy is
    calculated on the imaginary-frequency axis with a subsequent analytic continuation
    to the real axis. As an alternative we can perform the frequency convolution of
    the Green function G and the dynamically screened Coulomb interaction W explicitly
    by a contour integration. The singularity of the bare and screened interaction
    potentials gives rise to a numerically important self-energy contribution, which
    we treat analytically to achieve good convergence with respect to the k-point
    sampling. As numerical realizations of the GW approximation typically suffer from
    the high computational expense required for the evaluation of the nonlocal and
    frequency-dependent self-energy, we demonstrate how the algorithm can be made
    very efficient by exploiting spatial and time-reversal symmetry as well as by
    applying an optimization of the mixed product basis that retains only the numerically
    important contributions of the electron-electron interaction. This optimization
    step reduces the basis size without compromising the accuracy and accelerates
    the code considerably. Furthermore, we demonstrate that one can employ an extrapolar
    approximation for high-lying states to reduce the number of empty states that
    must be taken into account explicitly in the construction of the polarization
    function and the self-energy. We show convergence tests, CPU timings, and results
    for prototype semiconductors and insulators as well as ferromagnetic nickel.
article_number: '125102'
article_type: original
author:
- first_name: Christoph
  full_name: Friedrich, Christoph
  last_name: Friedrich
- first_name: Stefan
  full_name: Blügel, Stefan
  last_name: Blügel
- first_name: Arno
  full_name: Schindlmayr, Arno
  id: '458'
  last_name: Schindlmayr
  orcid: 0000-0002-4855-071X
citation:
  ama: Friedrich C, Blügel S, Schindlmayr A. Efficient implementation of the GW approximation
    within the all-electron FLAPW method. <i>Physical Review B</i>. 2010;81(12). doi:<a
    href="https://doi.org/10.1103/PhysRevB.81.125102">10.1103/PhysRevB.81.125102</a>
  apa: Friedrich, C., Blügel, S., &#38; Schindlmayr, A. (2010). Efficient implementation
    of the GW approximation within the all-electron FLAPW method. <i>Physical Review
    B</i>, <i>81</i>(12), Article 125102. <a href="https://doi.org/10.1103/PhysRevB.81.125102">https://doi.org/10.1103/PhysRevB.81.125102</a>
  bibtex: '@article{Friedrich_Blügel_Schindlmayr_2010, title={Efficient implementation
    of the GW approximation within the all-electron FLAPW method}, volume={81}, DOI={<a
    href="https://doi.org/10.1103/PhysRevB.81.125102">10.1103/PhysRevB.81.125102</a>},
    number={12125102}, journal={Physical Review B}, publisher={American Physical Society},
    author={Friedrich, Christoph and Blügel, Stefan and Schindlmayr, Arno}, year={2010}
    }'
  chicago: Friedrich, Christoph, Stefan Blügel, and Arno Schindlmayr. “Efficient Implementation
    of the GW Approximation within the All-Electron FLAPW Method.” <i>Physical Review
    B</i> 81, no. 12 (2010). <a href="https://doi.org/10.1103/PhysRevB.81.125102">https://doi.org/10.1103/PhysRevB.81.125102</a>.
  ieee: 'C. Friedrich, S. Blügel, and A. Schindlmayr, “Efficient implementation of
    the GW approximation within the all-electron FLAPW method,” <i>Physical Review
    B</i>, vol. 81, no. 12, Art. no. 125102, 2010, doi: <a href="https://doi.org/10.1103/PhysRevB.81.125102">10.1103/PhysRevB.81.125102</a>.'
  mla: Friedrich, Christoph, et al. “Efficient Implementation of the GW Approximation
    within the All-Electron FLAPW Method.” <i>Physical Review B</i>, vol. 81, no.
    12, 125102, American Physical Society, 2010, doi:<a href="https://doi.org/10.1103/PhysRevB.81.125102">10.1103/PhysRevB.81.125102</a>.
  short: C. Friedrich, S. Blügel, A. Schindlmayr, Physical Review B 81 (2010).
date_created: 2020-08-28T11:26:20Z
date_updated: 2023-04-20T14:57:10Z
ddc:
- '530'
department:
- _id: '296'
- _id: '35'
- _id: '15'
- _id: '170'
doi: 10.1103/PhysRevB.81.125102
external_id:
  arxiv:
  - '1003.0316'
  isi:
  - '000276248900039'
file:
- access_level: open_access
  content_type: application/pdf
  creator: schindlm
  date_created: 2020-08-28T11:29:11Z
  date_updated: 2020-08-30T15:06:54Z
  description: © 2010 American Physical Society
  file_id: '18559'
  file_name: PhysRevB.81.125102.pdf
  file_size: 330212
  relation: main_file
  title: Efficient implementation of the GW approximation within the all-electron
    FLAPW method
file_date_updated: 2020-08-30T15:06:54Z
has_accepted_license: '1'
intvolume: '        81'
isi: '1'
issue: '12'
language:
- iso: eng
oa: '1'
publication: Physical Review B
publication_identifier:
  eissn:
  - 1550-235X
  issn:
  - 1098-0121
publication_status: published
publisher: American Physical Society
quality_controlled: '1'
related_material:
  record:
  - id: '22761'
    relation: other
    status: public
status: public
title: Efficient implementation of the GW approximation within the all-electron FLAPW
  method
type: journal_article
user_id: '16199'
volume: 81
year: '2010'
...
---
_id: '44064'
abstract:
- lang: eng
  text: We compute photocurrents generated by femtosecond single-color laser pulses
    in non-centrosymmetric semiconductor quantum wells by combining a 14 x 14 k.p
    band structure theory with multi-band semiconductor Bloch equations. The transient
    photocurrents are investigated experimentally by measuring the associated Terahertz
    emission. The dependencies of the photocurrent and the Terahertz emission on the
    excitation conditions are discussed for (110)-oriented GaAs quantum wells. The
    comparison between theory and experiment shows a good agreement.
author:
- first_name: Torsten
  full_name: Meier, Torsten
  id: '344'
  last_name: Meier
  orcid: 0000-0001-8864-2072
- first_name: Huynh Thanh
  full_name: Duc, Huynh Thanh
  last_name: Duc
- first_name: Jens
  full_name: Foerstner, Jens
  last_name: Foerstner
- first_name: S.
  full_name: Priyadarshi, S.
  last_name: Priyadarshi
- first_name: Ana Maria
  full_name: Racu, Ana Maria
  last_name: Racu
- first_name: Klaus
  full_name: Pierz, Klaus
  last_name: Pierz
- first_name: Uwe
  full_name: Siegner, Uwe
  last_name: Siegner
- first_name: Mark
  full_name: Bieler, Mark
  last_name: Bieler
citation:
  ama: 'Meier T, Duc HT, Foerstner J, et al. Experimental and theoretical investigations
    of photocurrents in non-centrosymmetric semiconductor quantum wells. In: <i>DPG
    Spring Meeting 2010 </i>. Vol 45. Verhandlungen der Deutschen Physikalischen Gesellschaft.
    ; 2010.'
  apa: Meier, T., Duc, H. T., Foerstner, J., Priyadarshi, S., Racu, A. M., Pierz,
    K., Siegner, U., &#38; Bieler, M. (2010). Experimental and theoretical investigations
    of photocurrents in non-centrosymmetric semiconductor quantum wells. <i>DPG Spring
    Meeting 2010 </i>, <i>45</i>(3).
  bibtex: '@inproceedings{Meier_Duc_Foerstner_Priyadarshi_Racu_Pierz_Siegner_Bieler_2010,
    series={Verhandlungen der Deutschen Physikalischen Gesellschaft}, title={Experimental
    and theoretical investigations of photocurrents in non-centrosymmetric semiconductor
    quantum wells}, volume={45}, number={3}, booktitle={DPG Spring meeting 2010 },
    author={Meier, Torsten and Duc, Huynh Thanh and Foerstner, Jens and Priyadarshi,
    S. and Racu, Ana Maria and Pierz, Klaus and Siegner, Uwe and Bieler, Mark}, year={2010},
    collection={Verhandlungen der Deutschen Physikalischen Gesellschaft} }'
  chicago: Meier, Torsten, Huynh Thanh Duc, Jens Foerstner, S. Priyadarshi, Ana Maria
    Racu, Klaus Pierz, Uwe Siegner, and Mark Bieler. “Experimental and Theoretical
    Investigations of Photocurrents in Non-Centrosymmetric Semiconductor Quantum Wells.”
    In <i>DPG Spring Meeting 2010 </i>, Vol. 45. Verhandlungen Der Deutschen Physikalischen
    Gesellschaft, 2010.
  ieee: T. Meier <i>et al.</i>, “Experimental and theoretical investigations of photocurrents
    in non-centrosymmetric semiconductor quantum wells,” in <i>DPG Spring meeting
    2010 </i>, Regensburg, Germany, 2010, vol. 45, no. 3.
  mla: Meier, Torsten, et al. “Experimental and Theoretical Investigations of Photocurrents
    in Non-Centrosymmetric Semiconductor Quantum Wells.” <i>DPG Spring Meeting 2010
    </i>, vol. 45, no. 3, 2010.
  short: 'T. Meier, H.T. Duc, J. Foerstner, S. Priyadarshi, A.M. Racu, K. Pierz, U.
    Siegner, M. Bieler, in: DPG Spring Meeting 2010 , 2010.'
conference:
  end_date: 2010-03-26
  location: Regensburg, Germany
  name: 'DPG Spring meeting 2010 '
  start_date: 2010-03-21
date_created: 2023-04-19T11:01:12Z
date_updated: 2023-05-01T12:48:34Z
department:
- _id: '293'
intvolume: '        45'
issue: '3'
language:
- iso: eng
main_file_link:
- url: https://www.dpg-verhandlungen.de/year/2010/conference/regensburg/part/hl/session/5/contribution/6
publication: 'DPG Spring meeting 2010 '
publication_identifier:
  issn:
  - 0420-0195
publication_status: published
series_title: Verhandlungen der Deutschen Physikalischen Gesellschaft
status: public
title: Experimental and theoretical investigations of photocurrents in non-centrosymmetric
  semiconductor quantum wells
type: conference
user_id: '49063'
volume: 45
year: '2010'
...
---
_id: '44067'
abstract:
- lang: eng
  text: Semiconductor nanostructures always contain a certain degree of disorder due
    to interface roughness and/or alloy disorder. The disorder has significant influence
    on the optical properties, e.g., excitonic absorption spectra. An adaptive wavelet
    approach for the solution of the excitonic Schroedinger equation, i.e., the semiconductor
    Bloch equation for the interband coherence linear in the external field, has been
    developed and applied to compute absorption spectra and/or wave functions. Results
    obtained for a thin GaAs semiconductor quantum wire considering a number of different
    model disorder potentials are presented and discussed.
author:
- first_name: Torsten
  full_name: Meier, Torsten
  id: '344'
  last_name: Meier
  orcid: 0000-0001-8864-2072
- first_name: Christian
  full_name: Mollet, Christian
  last_name: Mollet
- first_name: Angela
  full_name: Kunoth, Angela
  last_name: Kunoth
citation:
  ama: 'Meier T, Mollet C, Kunoth A. A numerical adaptive wavelet approach to excitonic
    absorption spectra of disordered semiconductor nanostructures. In: <i>DPG Spring
    Meeting 2010</i>. Vol 45. Verhandlungen der Deutschen Physikalischen Gesellschaft.
    ; 2010.'
  apa: Meier, T., Mollet, C., &#38; Kunoth, A. (2010). A numerical adaptive wavelet
    approach to excitonic absorption spectra of disordered semiconductor nanostructures.
    <i>DPG Spring Meeting 2010</i>, <i>45</i>(3).
  bibtex: '@inproceedings{Meier_Mollet_Kunoth_2010, series={Verhandlungen der Deutschen
    Physikalischen Gesellschaft}, title={A numerical adaptive wavelet approach to
    excitonic absorption spectra of disordered semiconductor nanostructures}, volume={45},
    number={3}, booktitle={DPG Spring meeting 2010}, author={Meier, Torsten and Mollet,
    Christian and Kunoth, Angela}, year={2010}, collection={Verhandlungen der Deutschen
    Physikalischen Gesellschaft} }'
  chicago: Meier, Torsten, Christian Mollet, and Angela Kunoth. “A Numerical Adaptive
    Wavelet Approach to Excitonic Absorption Spectra of Disordered Semiconductor Nanostructures.”
    In <i>DPG Spring Meeting 2010</i>, Vol. 45. Verhandlungen Der Deutschen Physikalischen
    Gesellschaft, 2010.
  ieee: T. Meier, C. Mollet, and A. Kunoth, “A numerical adaptive wavelet approach
    to excitonic absorption spectra of disordered semiconductor nanostructures,” in
    <i>DPG Spring meeting 2010</i>, Regensburg, Germany, 2010, vol. 45, no. 3.
  mla: Meier, Torsten, et al. “A Numerical Adaptive Wavelet Approach to Excitonic
    Absorption Spectra of Disordered Semiconductor Nanostructures.” <i>DPG Spring
    Meeting 2010</i>, vol. 45, no. 3, 2010.
  short: 'T. Meier, C. Mollet, A. Kunoth, in: DPG Spring Meeting 2010, 2010.'
conference:
  end_date: 2010-03-26
  location: Regensburg, Germany
  name: DPG Spring meeting 2010
  start_date: 2010-03-21
date_created: 2023-04-19T11:06:53Z
date_updated: 2023-05-01T12:56:11Z
department:
- _id: '293'
intvolume: '        45'
issue: '3'
language:
- iso: eng
main_file_link:
- url: https://www.dpg-verhandlungen.de/year/2010/conference/regensburg/part/hl/session/60/contribution/1
publication: DPG Spring meeting 2010
publication_identifier:
  issn:
  - ' 0420-0195'
publication_status: published
series_title: Verhandlungen der Deutschen Physikalischen Gesellschaft
status: public
title: A numerical adaptive wavelet approach to excitonic absorption spectra of disordered
  semiconductor nanostructures
type: conference
user_id: '49063'
volume: 45
year: '2010'
...
---
_id: '44065'
abstract:
- lang: eng
  text: The behavior of waveguide plasmon polaritons is studied employing ultrafast
    coherent control like schemes for a gold lattice coupled to a photonic waveguide
    for the structure. Different models to describe the third-harmonic generation
    are presented and the resulting equations are solved numerically. The calculations
    are compared to recent experimental data and show good agreement for the most
    prominent features in the time-integrated third order intensity.
author:
- first_name: Torsten
  full_name: Meier, Torsten
  id: '344'
  last_name: Meier
  orcid: 0000-0001-8864-2072
- first_name: Reinold
  full_name: Podzimski, Reinold
  last_name: Podzimski
- first_name: Matthias
  full_name: Reichelt, Matthias
  id: '138'
  last_name: Reichelt
- first_name: Tobias
  full_name: Utikal, Tobias
  last_name: Utikal
- first_name: Harald
  full_name: Giessen, Harald
  last_name: Giessen
citation:
  ama: 'Meier T, Podzimski R, Reichelt M, Utikal T, Giessen H. Controlling the third-harmonic
    generation in a metallic photonic crystal coupled to a waveguide. In: <i>DPG Spring
    Meeting 2010</i>. Vol 45. Verhandlungen der Deutschen Physikalischen Gesellschaft.
    ; 2010.'
  apa: Meier, T., Podzimski, R., Reichelt, M., Utikal, T., &#38; Giessen, H. (2010).
    Controlling the third-harmonic generation in a metallic photonic crystal coupled
    to a waveguide. <i>DPG Spring Meeting 2010</i>, <i>45</i>(3).
  bibtex: '@inproceedings{Meier_Podzimski_Reichelt_Utikal_Giessen_2010, series={Verhandlungen
    der Deutschen Physikalischen Gesellschaft}, title={Controlling the third-harmonic
    generation in a metallic photonic crystal coupled to a waveguide}, volume={45},
    number={3}, booktitle={DPG Spring meeting 2010}, author={Meier, Torsten and Podzimski,
    Reinold and Reichelt, Matthias and Utikal, Tobias and Giessen, Harald}, year={2010},
    collection={Verhandlungen der Deutschen Physikalischen Gesellschaft} }'
  chicago: Meier, Torsten, Reinold Podzimski, Matthias Reichelt, Tobias Utikal, and
    Harald Giessen. “Controlling the Third-Harmonic Generation in a Metallic Photonic
    Crystal Coupled to a Waveguide.” In <i>DPG Spring Meeting 2010</i>, Vol. 45. Verhandlungen
    Der Deutschen Physikalischen Gesellschaft, 2010.
  ieee: T. Meier, R. Podzimski, M. Reichelt, T. Utikal, and H. Giessen, “Controlling
    the third-harmonic generation in a metallic photonic crystal coupled to a waveguide,”
    in <i>DPG Spring meeting 2010</i>, Regensburg, Germany, 2010, vol. 45, no. 3.
  mla: Meier, Torsten, et al. “Controlling the Third-Harmonic Generation in a Metallic
    Photonic Crystal Coupled to a Waveguide.” <i>DPG Spring Meeting 2010</i>, vol.
    45, no. 3, 2010.
  short: 'T. Meier, R. Podzimski, M. Reichelt, T. Utikal, H. Giessen, in: DPG Spring
    Meeting 2010, 2010.'
conference:
  end_date: 2010-03-26
  location: Regensburg, Germany
  name: DPG Spring meeting 2010
  start_date: 2010-03-21
date_created: 2023-04-19T11:03:20Z
date_updated: 2023-05-01T12:51:52Z
department:
- _id: '293'
intvolume: '        45'
issue: '3'
language:
- iso: eng
main_file_link:
- url: https://www.dpg-verhandlungen.de/year/2010/conference/regensburg/part/o/session/59/contribution/36
publication: DPG Spring meeting 2010
publication_identifier:
  issn:
  - 0420-0195
publication_status: published
series_title: Verhandlungen der Deutschen Physikalischen Gesellschaft
status: public
title: Controlling the third-harmonic generation in a metallic photonic crystal coupled
  to a waveguide
type: conference
user_id: '49063'
volume: 45
year: '2010'
...
---
_id: '44066'
abstract:
- lang: eng
  text: We present a joint theoretical study of the optical properties of GaAs and
    AlAs bulk and heterostructures. Thereby, we compare the theoretical description
    of optical excitation on several levels of theory. Results obtained from kp theory
    are discussed along with data from ab initio calculations within the frameworks
    of independent-particle (DFT), independent quasiparticle (GW), or Coulomb-correlated
    quasiparticle (BSE) approximation.
author:
- first_name: Torsten
  full_name: Meier, Torsten
  id: '344'
  last_name: Meier
  orcid: 0000-0001-8864-2072
- first_name: Marc
  full_name: Landmann, Marc
  last_name: Landmann
- first_name: Michal
  full_name: Pochwala, Michal
  last_name: Pochwala
- first_name: Jens
  full_name: Foerstner, Jens
  last_name: Foerstner
- first_name: Eva
  full_name: Rauls, Eva
  last_name: Rauls
- first_name: Wolf Gero
  full_name: Schmidt, Wolf Gero
  last_name: Schmidt
citation:
  ama: 'Meier T, Landmann M, Pochwala M, Foerstner J, Rauls E, Schmidt WG. Theoretical
    description of optical properties in III-V semiconductor nanostructures. In: <i>DPG
    Spring Meeting 2010</i>. Vol 45. Verhandlungen der Deutschen Physikalischen Gesellschaft.
    ; 2010.'
  apa: Meier, T., Landmann, M., Pochwala, M., Foerstner, J., Rauls, E., &#38; Schmidt,
    W. G. (2010). Theoretical description of optical properties in III-V semiconductor
    nanostructures. <i>DPG Spring Meeting 2010</i>, <i>45</i>(3).
  bibtex: '@inproceedings{Meier_Landmann_Pochwala_Foerstner_Rauls_Schmidt_2010, series={Verhandlungen
    der Deutschen Physikalischen Gesellschaft}, title={Theoretical description of
    optical properties in III-V semiconductor nanostructures}, volume={45}, number={3},
    booktitle={DPG Spring meeting 2010}, author={Meier, Torsten and Landmann, Marc
    and Pochwala, Michal and Foerstner, Jens and Rauls, Eva and Schmidt, Wolf Gero},
    year={2010}, collection={Verhandlungen der Deutschen Physikalischen Gesellschaft}
    }'
  chicago: Meier, Torsten, Marc Landmann, Michal Pochwala, Jens Foerstner, Eva Rauls,
    and Wolf Gero Schmidt. “Theoretical Description of Optical Properties in III-V
    Semiconductor Nanostructures.” In <i>DPG Spring Meeting 2010</i>, Vol. 45. Verhandlungen
    Der Deutschen Physikalischen Gesellschaft, 2010.
  ieee: T. Meier, M. Landmann, M. Pochwala, J. Foerstner, E. Rauls, and W. G. Schmidt,
    “Theoretical description of optical properties in III-V semiconductor nanostructures,”
    in <i>DPG Spring meeting 2010</i>, Regensburg, Germany, 2010, vol. 45, no. 3.
  mla: Meier, Torsten, et al. “Theoretical Description of Optical Properties in III-V
    Semiconductor Nanostructures.” <i>DPG Spring Meeting 2010</i>, vol. 45, no. 3,
    2010.
  short: 'T. Meier, M. Landmann, M. Pochwala, J. Foerstner, E. Rauls, W.G. Schmidt,
    in: DPG Spring Meeting 2010, 2010.'
conference:
  end_date: 2010-03-26
  location: Regensburg, Germany
  name: DPG Spring meeting 2010
  start_date: 2010-03-21
date_created: 2023-04-19T11:05:15Z
date_updated: 2023-05-01T12:54:38Z
department:
- _id: '293'
intvolume: '        45'
issue: '3'
language:
- iso: eng
main_file_link:
- url: https://www.dpg-verhandlungen.de/year/2010/conference/regensburg/part/hl/session/34/contribution/1
publication: DPG Spring meeting 2010
publication_identifier:
  issn:
  - 0420-0195
publication_status: published
series_title: Verhandlungen der Deutschen Physikalischen Gesellschaft
status: public
title: Theoretical description of optical properties in III-V semiconductor nanostructures
type: conference
user_id: '49063'
volume: 45
year: '2010'
...
---
_id: '45294'
author:
- first_name: Josef
  full_name: Riese, Josef
  id: '429'
  last_name: Riese
citation:
  ama: Riese J. Empirische Erkenntnisse zur Wirksamkeit der universitären Lehrerbildung
    – Indizien für notwendige Veränderungen der fachlichen Ausbildung von Physiklehrkräften.
    <i>PhyDid – Physik und Didaktik in Schule und Hochschule</i>. 2010;9:25-33.
  apa: Riese, J. (2010). Empirische Erkenntnisse zur Wirksamkeit der universitären
    Lehrerbildung – Indizien für notwendige Veränderungen der fachlichen Ausbildung
    von Physiklehrkräften. <i>PhyDid – Physik und Didaktik in Schule und Hochschule</i>,
    <i>9</i>, 25–33.
  bibtex: '@article{Riese_2010, title={Empirische Erkenntnisse zur Wirksamkeit der
    universitären Lehrerbildung – Indizien für notwendige Veränderungen der fachlichen
    Ausbildung von Physiklehrkräften}, volume={9}, journal={PhyDid – Physik und Didaktik
    in Schule und Hochschule}, author={Riese, Josef}, year={2010}, pages={25–33} }'
  chicago: 'Riese, Josef. “Empirische Erkenntnisse zur Wirksamkeit der universitären
    Lehrerbildung – Indizien für notwendige Veränderungen der fachlichen Ausbildung
    von Physiklehrkräften.” <i>PhyDid – Physik und Didaktik in Schule und Hochschule</i>
    9 (2010): 25–33.'
  ieee: J. Riese, “Empirische Erkenntnisse zur Wirksamkeit der universitären Lehrerbildung
    – Indizien für notwendige Veränderungen der fachlichen Ausbildung von Physiklehrkräften,”
    <i>PhyDid – Physik und Didaktik in Schule und Hochschule</i>, vol. 9, pp. 25–33,
    2010.
  mla: Riese, Josef. “Empirische Erkenntnisse zur Wirksamkeit der universitären Lehrerbildung
    – Indizien für notwendige Veränderungen der fachlichen Ausbildung von Physiklehrkräften.”
    <i>PhyDid – Physik und Didaktik in Schule und Hochschule</i>, vol. 9, 2010, pp.
    25–33.
  short: J. Riese, PhyDid – Physik und Didaktik in Schule und Hochschule 9 (2010)
    25–33.
date_created: 2023-05-25T15:27:06Z
date_updated: 2023-05-31T07:51:17Z
department:
- _id: '299'
intvolume: '         9'
language:
- iso: ger
page: 25-33
publication: PhyDid – Physik und Didaktik in Schule und Hochschule
status: public
title: Empirische Erkenntnisse zur Wirksamkeit der universitären Lehrerbildung – Indizien
  für notwendige Veränderungen der fachlichen Ausbildung von Physiklehrkräften
type: journal_article
user_id: '84746'
volume: 9
year: '2010'
...
---
_id: '45293'
author:
- first_name: Josef
  full_name: Riese, Josef
  id: '429'
  last_name: Riese
- first_name: Peter
  full_name: Reinhold, Peter
  id: '416'
  last_name: Reinhold
citation:
  ama: Riese J, Reinhold P. Empirische Erkenntnisse zur Struktur professioneller Handlungskompetenz
    von angehenden Physiklehrkräften. <i>Zeitschrift für Didaktik der Naturwissenschaften</i>.
    2010;16:167-187.
  apa: Riese, J., &#38; Reinhold, P. (2010). Empirische Erkenntnisse zur Struktur
    professioneller Handlungskompetenz von angehenden Physiklehrkräften. <i>Zeitschrift
    für Didaktik der Naturwissenschaften</i>, <i>16</i>, 167–187.
  bibtex: '@article{Riese_Reinhold_2010, title={Empirische Erkenntnisse zur Struktur
    professioneller Handlungskompetenz von angehenden Physiklehrkräften}, volume={16},
    journal={Zeitschrift für Didaktik der Naturwissenschaften}, author={Riese, Josef
    and Reinhold, Peter}, year={2010}, pages={167–187} }'
  chicago: 'Riese, Josef, and Peter Reinhold. “Empirische Erkenntnisse zur Struktur
    professioneller Handlungskompetenz von angehenden Physiklehrkräften.” <i>Zeitschrift
    für Didaktik der Naturwissenschaften</i> 16 (2010): 167–87.'
  ieee: J. Riese and P. Reinhold, “Empirische Erkenntnisse zur Struktur professioneller
    Handlungskompetenz von angehenden Physiklehrkräften,” <i>Zeitschrift für Didaktik
    der Naturwissenschaften</i>, vol. 16, pp. 167–187, 2010.
  mla: Riese, Josef, and Peter Reinhold. “Empirische Erkenntnisse zur Struktur professioneller
    Handlungskompetenz von angehenden Physiklehrkräften.” <i>Zeitschrift für Didaktik
    der Naturwissenschaften</i>, vol. 16, 2010, pp. 167–87.
  short: J. Riese, P. Reinhold, Zeitschrift für Didaktik der Naturwissenschaften 16
    (2010) 167–187.
date_created: 2023-05-25T15:24:53Z
date_updated: 2023-05-31T07:51:22Z
department:
- _id: '299'
intvolume: '        16'
language:
- iso: ger
page: 167-187
publication: Zeitschrift für Didaktik der Naturwissenschaften
status: public
title: Empirische Erkenntnisse zur Struktur professioneller Handlungskompetenz von
  angehenden Physiklehrkräften
type: journal_article
user_id: '84746'
volume: 16
year: '2010'
...
---
_id: '45292'
author:
- first_name: Andreas
  full_name: Borowski, Andreas
  last_name: Borowski
- first_name: Josef
  full_name: Riese, Josef
  id: '429'
  last_name: Riese
citation:
  ama: Borowski A, Riese J. Physikalisch-fachdidaktisches Wissen – Was kommt in der
    Praxis an? <i>Praxis der Naturwissenschaften Physik in der Schule</i>. 2010;59(5):5-8.
  apa: Borowski, A., &#38; Riese, J. (2010). Physikalisch-fachdidaktisches Wissen
    – Was kommt in der Praxis an? <i>Praxis der Naturwissenschaften Physik in der
    Schule</i>, <i>59</i>(5), 5–8.
  bibtex: '@article{Borowski_Riese_2010, title={Physikalisch-fachdidaktisches Wissen
    – Was kommt in der Praxis an?}, volume={59}, number={5}, journal={Praxis der Naturwissenschaften
    Physik in der Schule}, author={Borowski, Andreas and Riese, Josef}, year={2010},
    pages={5–8} }'
  chicago: 'Borowski, Andreas, and Josef Riese. “Physikalisch-fachdidaktisches Wissen
    – Was kommt in der Praxis an?” <i>Praxis der Naturwissenschaften Physik in der
    Schule</i> 59, no. 5 (2010): 5–8.'
  ieee: A. Borowski and J. Riese, “Physikalisch-fachdidaktisches Wissen – Was kommt
    in der Praxis an?,” <i>Praxis der Naturwissenschaften Physik in der Schule</i>,
    vol. 59, no. 5, pp. 5–8, 2010.
  mla: Borowski, Andreas, and Josef Riese. “Physikalisch-fachdidaktisches Wissen –
    Was kommt in der Praxis an?” <i>Praxis der Naturwissenschaften Physik in der Schule</i>,
    vol. 59, no. 5, 2010, pp. 5–8.
  short: A. Borowski, J. Riese, Praxis der Naturwissenschaften Physik in der Schule
    59 (2010) 5–8.
date_created: 2023-05-25T15:22:47Z
date_updated: 2023-05-31T07:51:27Z
department:
- _id: '299'
intvolume: '        59'
issue: '5'
language:
- iso: ger
page: 5-8
publication: Praxis der Naturwissenschaften Physik in der Schule
status: public
title: Physikalisch-fachdidaktisches Wissen – Was kommt in der Praxis an?
type: journal_article
user_id: '84746'
volume: 59
year: '2010'
...
---
_id: '45540'
author:
- first_name: Andreas
  full_name: Borowski, Andreas
  last_name: Borowski
- first_name: 'Hans '
  full_name: 'Fischer, Hans '
  last_name: Fischer
- first_name: Jennifer
  full_name: Olszewski, Jennifer
  last_name: Olszewski
- first_name: Peter
  full_name: Reinhold, Peter
  id: '416'
  last_name: Reinhold
- first_name: Josef
  full_name: Riese, Josef
  id: '429'
  last_name: Riese
  orcid: 0000-0003-2927-2619
citation:
  ama: 'Borowski A, Fischer H, Olszewski J, Reinhold P, Riese J. Ein Vergleich von
    Tests zum fachdidaktischen Wissen von Physiklehrkräften. In: Höttecke D, ed. <i>Entwicklung
    naturwissenschaftlichen Denkens zwischen Phänomen und Systematik. Gesellschaft
    für Didaktik der Chemie und Physik. Jahrestagung in Dresden 2009</i>. ; 2010:377-379.'
  apa: Borowski, A., Fischer, H., Olszewski, J., Reinhold, P., &#38; Riese, J. (2010).
    Ein Vergleich von Tests zum fachdidaktischen Wissen von Physiklehrkräften. In
    D. Höttecke (Ed.), <i>Entwicklung naturwissenschaftlichen Denkens zwischen Phänomen
    und Systematik. Gesellschaft für Didaktik der Chemie und Physik. Jahrestagung
    in Dresden 2009</i> (pp. 377–379).
  bibtex: '@inproceedings{Borowski_Fischer_Olszewski_Reinhold_Riese_2010, title={Ein
    Vergleich von Tests zum fachdidaktischen Wissen von Physiklehrkräften}, booktitle={Entwicklung
    naturwissenschaftlichen Denkens zwischen Phänomen und Systematik. Gesellschaft
    für Didaktik der Chemie und Physik. Jahrestagung in Dresden 2009}, author={Borowski,
    Andreas and Fischer, Hans  and Olszewski, Jennifer and Reinhold, Peter and Riese,
    Josef}, editor={Höttecke, Dietmar}, year={2010}, pages={377–379} }'
  chicago: Borowski, Andreas, Hans  Fischer, Jennifer Olszewski, Peter Reinhold, and
    Josef Riese. “Ein Vergleich von Tests zum fachdidaktischen Wissen von Physiklehrkräften.”
    In <i>Entwicklung naturwissenschaftlichen Denkens zwischen Phänomen und Systematik.
    Gesellschaft für Didaktik der Chemie und Physik. Jahrestagung in Dresden 2009</i>,
    edited by Dietmar Höttecke, 377–79, 2010.
  ieee: A. Borowski, H. Fischer, J. Olszewski, P. Reinhold, and J. Riese, “Ein Vergleich
    von Tests zum fachdidaktischen Wissen von Physiklehrkräften,” in <i>Entwicklung
    naturwissenschaftlichen Denkens zwischen Phänomen und Systematik. Gesellschaft
    für Didaktik der Chemie und Physik. Jahrestagung in Dresden 2009</i>, 2010, pp.
    377–379.
  mla: Borowski, Andreas, et al. “Ein Vergleich von Tests zum fachdidaktischen Wissen
    von Physiklehrkräften.” <i>Entwicklung naturwissenschaftlichen Denkens zwischen
    Phänomen und Systematik. Gesellschaft für Didaktik der Chemie und Physik. Jahrestagung
    in Dresden 2009</i>, edited by Dietmar Höttecke, 2010, pp. 377–79.
  short: 'A. Borowski, H. Fischer, J. Olszewski, P. Reinhold, J. Riese, in: D. Höttecke
    (Ed.), Entwicklung naturwissenschaftlichen Denkens zwischen Phänomen und Systematik.
    Gesellschaft für Didaktik der Chemie und Physik. Jahrestagung in Dresden 2009,
    2010, pp. 377–379.'
date_created: 2023-06-08T14:27:43Z
date_updated: 2023-06-09T13:48:03Z
department:
- _id: '299'
editor:
- first_name: Dietmar
  full_name: Höttecke, Dietmar
  last_name: Höttecke
language:
- iso: ger
page: 377-379
publication: Entwicklung naturwissenschaftlichen Denkens zwischen Phänomen und Systematik.
  Gesellschaft für Didaktik der Chemie und Physik. Jahrestagung in Dresden 2009
status: public
title: Ein Vergleich von Tests zum fachdidaktischen Wissen von Physiklehrkräften
type: conference
user_id: '84746'
year: '2010'
...
---
_id: '45541'
author:
- first_name: Andreas
  full_name: Borowski, Andreas
  last_name: Borowski
- first_name: Hans
  full_name: Fischer, Hans
  last_name: Fischer
- first_name: Jennifer
  full_name: Olszewski, Jennifer
  last_name: Olszewski
- first_name: Peter
  full_name: Reinhold, Peter
  id: '416'
  last_name: Reinhold
- first_name: Josef
  full_name: Riese, Josef
  id: '429'
  last_name: Riese
  orcid: 0000-0003-2927-2619
- first_name: Christoph
  full_name: Vogelsang, Christoph
  id: '4245'
  last_name: Vogelsang
citation:
  ama: 'Borowski A, Fischer H, Olszewski J, Reinhold P, Riese J, Vogelsang C. Professionswissen
    von Physiklehrkräften. In: Höttecke D, ed. <i>Entwicklung naturwissenschaftlichen
    Denkens zwischen Phänomen und Systematik. Gesellschaft für Didaktik der Chemie
    und Physik. Jahrestagung in Dresden 2009</i>. ; 2010:365-367.'
  apa: Borowski, A., Fischer, H., Olszewski, J., Reinhold, P., Riese, J., &#38; Vogelsang,
    C. (2010). Professionswissen von Physiklehrkräften. In D. Höttecke (Ed.), <i>Entwicklung
    naturwissenschaftlichen Denkens zwischen Phänomen und Systematik. Gesellschaft
    für Didaktik der Chemie und Physik. Jahrestagung in Dresden 2009</i> (pp. 365–367).
  bibtex: '@inproceedings{Borowski_Fischer_Olszewski_Reinhold_Riese_Vogelsang_2010,
    title={Professionswissen von Physiklehrkräften}, booktitle={Entwicklung naturwissenschaftlichen
    Denkens zwischen Phänomen und Systematik. Gesellschaft für Didaktik der Chemie
    und Physik. Jahrestagung in Dresden 2009}, author={Borowski, Andreas and Fischer,
    Hans and Olszewski, Jennifer and Reinhold, Peter and Riese, Josef and Vogelsang,
    Christoph}, editor={Höttecke, Dietmar}, year={2010}, pages={365–367} }'
  chicago: Borowski, Andreas, Hans Fischer, Jennifer Olszewski, Peter Reinhold, Josef
    Riese, and Christoph Vogelsang. “Professionswissen von Physiklehrkräften.” In
    <i>Entwicklung naturwissenschaftlichen Denkens zwischen Phänomen und Systematik.
    Gesellschaft für Didaktik der Chemie und Physik. Jahrestagung in Dresden 2009</i>,
    edited by Dietmar Höttecke, 365–67, 2010.
  ieee: A. Borowski, H. Fischer, J. Olszewski, P. Reinhold, J. Riese, and C. Vogelsang,
    “Professionswissen von Physiklehrkräften,” in <i>Entwicklung naturwissenschaftlichen
    Denkens zwischen Phänomen und Systematik. Gesellschaft für Didaktik der Chemie
    und Physik. Jahrestagung in Dresden 2009</i>, 2010, pp. 365–367.
  mla: Borowski, Andreas, et al. “Professionswissen von Physiklehrkräften.” <i>Entwicklung
    naturwissenschaftlichen Denkens zwischen Phänomen und Systematik. Gesellschaft
    für Didaktik der Chemie und Physik. Jahrestagung in Dresden 2009</i>, edited by
    Dietmar Höttecke, 2010, pp. 365–67.
  short: 'A. Borowski, H. Fischer, J. Olszewski, P. Reinhold, J. Riese, C. Vogelsang,
    in: D. Höttecke (Ed.), Entwicklung naturwissenschaftlichen Denkens zwischen Phänomen
    und Systematik. Gesellschaft für Didaktik der Chemie und Physik. Jahrestagung
    in Dresden 2009, 2010, pp. 365–367.'
date_created: 2023-06-08T14:30:23Z
date_updated: 2023-06-09T13:47:57Z
department:
- _id: '299'
editor:
- first_name: Dietmar
  full_name: Höttecke, Dietmar
  last_name: Höttecke
language:
- iso: ger
page: 365-367
publication: Entwicklung naturwissenschaftlichen Denkens zwischen Phänomen und Systematik.
  Gesellschaft für Didaktik der Chemie und Physik. Jahrestagung in Dresden 2009
status: public
title: Professionswissen von Physiklehrkräften
type: conference
user_id: '84746'
year: '2010'
...
---
_id: '45542'
author:
- first_name: Josef
  full_name: Riese, Josef
  id: '429'
  last_name: Riese
  orcid: 0000-0003-2927-2619
- first_name: Peter
  full_name: Reinhold, Peter
  id: '416'
  last_name: Reinhold
citation:
  ama: 'Riese J, Reinhold P. Entwicklung und Struktur Physik-bezogener Kompetenz im
    Lehramtsstudium. In: Höttecke D, ed. <i>Entwicklung naturwissenschaftlichen Denkens
    zwischen Phänomen und Systematik. Gesellschaft für Didaktik der Chemie und Physik.
    Jahrestagung in Dresden 2009</i>. ; 2010:368-370.'
  apa: Riese, J., &#38; Reinhold, P. (2010). Entwicklung und Struktur Physik-bezogener
    Kompetenz im Lehramtsstudium. In D. Höttecke (Ed.), <i>Entwicklung naturwissenschaftlichen
    Denkens zwischen Phänomen und Systematik. Gesellschaft für Didaktik der Chemie
    und Physik. Jahrestagung in Dresden 2009</i> (pp. 368–370).
  bibtex: '@inproceedings{Riese_Reinhold_2010, title={Entwicklung und Struktur Physik-bezogener
    Kompetenz im Lehramtsstudium}, booktitle={Entwicklung naturwissenschaftlichen
    Denkens zwischen Phänomen und Systematik. Gesellschaft für Didaktik der Chemie
    und Physik. Jahrestagung in Dresden 2009}, author={Riese, Josef and Reinhold,
    Peter}, editor={Höttecke, Dietmar}, year={2010}, pages={368–370} }'
  chicago: Riese, Josef, and Peter Reinhold. “Entwicklung und Struktur Physik-bezogener
    Kompetenz im Lehramtsstudium.” In <i>Entwicklung naturwissenschaftlichen Denkens
    zwischen Phänomen und Systematik. Gesellschaft für Didaktik der Chemie und Physik.
    Jahrestagung in Dresden 2009</i>, edited by Dietmar Höttecke, 368–70, 2010.
  ieee: J. Riese and P. Reinhold, “Entwicklung und Struktur Physik-bezogener Kompetenz
    im Lehramtsstudium,” in <i>Entwicklung naturwissenschaftlichen Denkens zwischen
    Phänomen und Systematik. Gesellschaft für Didaktik der Chemie und Physik. Jahrestagung
    in Dresden 2009</i>, 2010, pp. 368–370.
  mla: Riese, Josef, and Peter Reinhold. “Entwicklung und Struktur Physik-bezogener
    Kompetenz im Lehramtsstudium.” <i>Entwicklung naturwissenschaftlichen Denkens
    zwischen Phänomen und Systematik. Gesellschaft für Didaktik der Chemie und Physik.
    Jahrestagung in Dresden 2009</i>, edited by Dietmar Höttecke, 2010, pp. 368–70.
  short: 'J. Riese, P. Reinhold, in: D. Höttecke (Ed.), Entwicklung naturwissenschaftlichen
    Denkens zwischen Phänomen und Systematik. Gesellschaft für Didaktik der Chemie
    und Physik. Jahrestagung in Dresden 2009, 2010, pp. 368–370.'
date_created: 2023-06-08T14:31:52Z
date_updated: 2023-06-09T13:47:51Z
department:
- _id: '299'
editor:
- first_name: Dietmar
  full_name: Höttecke, Dietmar
  last_name: Höttecke
language:
- iso: ger
page: 368-370
publication: Entwicklung naturwissenschaftlichen Denkens zwischen Phänomen und Systematik.
  Gesellschaft für Didaktik der Chemie und Physik. Jahrestagung in Dresden 2009
status: public
title: Entwicklung und Struktur Physik-bezogener Kompetenz im Lehramtsstudium
type: conference
user_id: '84746'
year: '2010'
...
---
_id: '45539'
author:
- first_name: Josef
  full_name: Riese, Josef
  id: '429'
  last_name: Riese
  orcid: 0000-0003-2927-2619
- first_name: Peter
  full_name: Reinhold, Peter
  id: '416'
  last_name: Reinhold
citation:
  ama: 'Riese J, Reinhold P. Measuring physics student teachers’ pedagogical content
    knowledge as an indicator of their professional action competence. In: Taşar MF,
    Çakmakci G, eds. <i>Contemporary Science Education Research: Teaching</i>. ; 2010:79-85;
    91-94.'
  apa: 'Riese, J., &#38; Reinhold, P. (2010). Measuring physics student teachers’
    pedagogical content knowledge as an indicator of their professional action competence.
    In M. F. Taşar &#38; G. Çakmakci (Eds.), <i>Contemporary science education research:
    teaching</i> (pp. 79–85; 91–94).'
  bibtex: '@inproceedings{Riese_Reinhold_2010, title={Measuring physics student teachers’
    pedagogical content knowledge as an indicator of their professional action competence},
    booktitle={Contemporary science education research: teaching}, author={Riese,
    Josef and Reinhold, Peter}, editor={Taşar, Mehmet Fatih and Çakmakci, Gültekin},
    year={2010}, pages={79–85; 91–94} }'
  chicago: 'Riese, Josef, and Peter Reinhold. “Measuring Physics Student Teachers’
    Pedagogical Content Knowledge as an Indicator of Their Professional Action Competence.”
    In <i>Contemporary Science Education Research: Teaching</i>, edited by Mehmet
    Fatih Taşar and Gültekin Çakmakci, 79–85; 91–94, 2010.'
  ieee: 'J. Riese and P. Reinhold, “Measuring physics student teachers’ pedagogical
    content knowledge as an indicator of their professional action competence,” in
    <i>Contemporary science education research: teaching</i>, 2010, pp. 79–85; 91–94.'
  mla: 'Riese, Josef, and Peter Reinhold. “Measuring Physics Student Teachers’ Pedagogical
    Content Knowledge as an Indicator of Their Professional Action Competence.” <i>Contemporary
    Science Education Research: Teaching</i>, edited by Mehmet Fatih Taşar and Gültekin
    Çakmakci, 2010, pp. 79–85; 91–94.'
  short: 'J. Riese, P. Reinhold, in: M.F. Taşar, G. Çakmakci (Eds.), Contemporary
    Science Education Research: Teaching, 2010, pp. 79–85; 91–94.'
date_created: 2023-06-08T14:23:35Z
date_updated: 2023-06-09T13:48:08Z
department:
- _id: '299'
editor:
- first_name: Mehmet Fatih
  full_name: Taşar, Mehmet Fatih
  last_name: Taşar
- first_name: Gültekin
  full_name: Çakmakci, Gültekin
  last_name: Çakmakci
language:
- iso: eng
page: 79-85; 91-94
publication: 'Contemporary science education research: teaching'
status: public
title: Measuring physics student teachers’ pedagogical content knowledge as an indicator
  of their professional action competence
type: conference
user_id: '84746'
year: '2010'
...
---
_id: '13581'
author:
- first_name: S.
  full_name: Wippermann, S.
  last_name: Wippermann
- first_name: Wolf Gero
  full_name: Schmidt, Wolf Gero
  id: '468'
  last_name: Schmidt
  orcid: 0000-0002-2717-5076
- first_name: F.
  full_name: Bechstedt, F.
  last_name: Bechstedt
- first_name: S.
  full_name: Chandola, S.
  last_name: Chandola
- first_name: K.
  full_name: Hinrichs, K.
  last_name: Hinrichs
- first_name: M.
  full_name: Gensch, M.
  last_name: Gensch
- first_name: N.
  full_name: Esser, N.
  last_name: Esser
- first_name: K.
  full_name: Fleischer, K.
  last_name: Fleischer
- first_name: J. F.
  full_name: McGilp, J. F.
  last_name: McGilp
citation:
  ama: Wippermann S, Schmidt WG, Bechstedt F, et al. Optical anisotropy of Si(111)-(4
    × 1)/(8 × 2)-In nanowires calculated fromfirst-principles. <i>physica status solidi
    (c)</i>. 2010;7(2):133-136. doi:<a href="https://doi.org/10.1002/pssc.200982413">10.1002/pssc.200982413</a>
  apa: Wippermann, S., Schmidt, W. G., Bechstedt, F., Chandola, S., Hinrichs, K.,
    Gensch, M., Esser, N., Fleischer, K., &#38; McGilp, J. F. (2010). Optical anisotropy
    of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles. <i>Physica
    Status Solidi (c)</i>, <i>7</i>(2), 133–136. <a href="https://doi.org/10.1002/pssc.200982413">https://doi.org/10.1002/pssc.200982413</a>
  bibtex: '@article{Wippermann_Schmidt_Bechstedt_Chandola_Hinrichs_Gensch_Esser_Fleischer_McGilp_2010,
    title={Optical anisotropy of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles},
    volume={7}, DOI={<a href="https://doi.org/10.1002/pssc.200982413">10.1002/pssc.200982413</a>},
    number={2}, journal={physica status solidi (c)}, author={Wippermann, S. and Schmidt,
    Wolf Gero and Bechstedt, F. and Chandola, S. and Hinrichs, K. and Gensch, M. and
    Esser, N. and Fleischer, K. and McGilp, J. F.}, year={2010}, pages={133–136} }'
  chicago: 'Wippermann, S., Wolf Gero Schmidt, F. Bechstedt, S. Chandola, K. Hinrichs,
    M. Gensch, N. Esser, K. Fleischer, and J. F. McGilp. “Optical Anisotropy of Si(111)-(4
    × 1)/(8 × 2)-In Nanowires Calculated Fromfirst-Principles.” <i>Physica Status
    Solidi (c)</i> 7, no. 2 (2010): 133–36. <a href="https://doi.org/10.1002/pssc.200982413">https://doi.org/10.1002/pssc.200982413</a>.'
  ieee: 'S. Wippermann <i>et al.</i>, “Optical anisotropy of Si(111)-(4 × 1)/(8 ×
    2)-In nanowires calculated fromfirst-principles,” <i>physica status solidi (c)</i>,
    vol. 7, no. 2, pp. 133–136, 2010, doi: <a href="https://doi.org/10.1002/pssc.200982413">10.1002/pssc.200982413</a>.'
  mla: Wippermann, S., et al. “Optical Anisotropy of Si(111)-(4 × 1)/(8 × 2)-In Nanowires
    Calculated Fromfirst-Principles.” <i>Physica Status Solidi (c)</i>, vol. 7, no.
    2, 2010, pp. 133–36, doi:<a href="https://doi.org/10.1002/pssc.200982413">10.1002/pssc.200982413</a>.
  short: S. Wippermann, W.G. Schmidt, F. Bechstedt, S. Chandola, K. Hinrichs, M. Gensch,
    N. Esser, K. Fleischer, J.F. McGilp, Physica Status Solidi (c) 7 (2010) 133–136.
date_created: 2019-10-01T14:34:59Z
date_updated: 2025-12-05T12:45:21Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '35'
- _id: '230'
- _id: '27'
doi: 10.1002/pssc.200982413
intvolume: '         7'
issue: '2'
language:
- iso: eng
page: 133-136
project:
- _id: '52'
  name: Computing Resources Provided by the Paderborn Center for Parallel Computing
publication: physica status solidi (c)
publication_identifier:
  issn:
  - 1862-6351
  - 1610-1642
publication_status: published
status: public
title: Optical anisotropy of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles
type: journal_article
user_id: '16199'
volume: 7
year: '2010'
...
---
_id: '13573'
abstract:
- lang: eng
  text: Given the vast range of lithium niobate (LiNbO3) applications, the knowledge
    about its electronic and optical properties is surprisingly limited. The direct
    band gap of 3.7 eV for the ferroelectric phase – frequently cited in the literature
    – is concluded from optical experiments. Recent theoretical investigations show
    that the electronic band‐structure and optical properties are very sensitive to
    quasiparticle and electron‐hole attraction effects, which were included using
    the GW approximation for the electron self‐energy and the Bethe‐Salpeter equation
    respectively, both based on a model screening function. The calculated fundamental
    gap was found to be at least 1 eV larger than the experimental value. To resolve
    this discrepancy we performed first‐principles GW calculations for lithium niobate
    using the full‐potential linearized augmented plane‐wave (FLAPW) method. Thereby
    we use the parameter‐free random phase approximation for a realistic description
    of the nonlocal and energydependent screening. This leads to a band gap of about
    4.7 (4.2) eV for ferro(para)‐electric lithium niobate.
article_type: original
author:
- first_name: Christian
  full_name: Thierfelder, Christian
  last_name: Thierfelder
- first_name: Simone
  full_name: Sanna, Simone
  last_name: Sanna
- first_name: Arno
  full_name: Schindlmayr, Arno
  id: '458'
  last_name: Schindlmayr
  orcid: 0000-0002-4855-071X
- first_name: Wolf Gero
  full_name: Schmidt, Wolf Gero
  id: '468'
  last_name: Schmidt
  orcid: 0000-0002-2717-5076
citation:
  ama: Thierfelder C, Sanna S, Schindlmayr A, Schmidt WG. Do we know the band gap
    of lithium niobate? <i>Physica Status Solidi C</i>. 2010;7(2):362-365. doi:<a
    href="https://doi.org/10.1002/pssc.200982473">10.1002/pssc.200982473</a>
  apa: Thierfelder, C., Sanna, S., Schindlmayr, A., &#38; Schmidt, W. G. (2010). Do
    we know the band gap of lithium niobate? <i>Physica Status Solidi C</i>, <i>7</i>(2),
    362–365. <a href="https://doi.org/10.1002/pssc.200982473">https://doi.org/10.1002/pssc.200982473</a>
  bibtex: '@article{Thierfelder_Sanna_Schindlmayr_Schmidt_2010, title={Do we know
    the band gap of lithium niobate?}, volume={7}, DOI={<a href="https://doi.org/10.1002/pssc.200982473">10.1002/pssc.200982473</a>},
    number={2}, journal={Physica Status Solidi C}, publisher={Wiley-VCH}, author={Thierfelder,
    Christian and Sanna, Simone and Schindlmayr, Arno and Schmidt, Wolf Gero}, year={2010},
    pages={362–365} }'
  chicago: 'Thierfelder, Christian, Simone Sanna, Arno Schindlmayr, and Wolf Gero
    Schmidt. “Do We Know the Band Gap of Lithium Niobate?” <i>Physica Status Solidi
    C</i> 7, no. 2 (2010): 362–65. <a href="https://doi.org/10.1002/pssc.200982473">https://doi.org/10.1002/pssc.200982473</a>.'
  ieee: 'C. Thierfelder, S. Sanna, A. Schindlmayr, and W. G. Schmidt, “Do we know
    the band gap of lithium niobate?,” <i>Physica Status Solidi C</i>, vol. 7, no.
    2, pp. 362–365, 2010, doi: <a href="https://doi.org/10.1002/pssc.200982473">10.1002/pssc.200982473</a>.'
  mla: Thierfelder, Christian, et al. “Do We Know the Band Gap of Lithium Niobate?”
    <i>Physica Status Solidi C</i>, vol. 7, no. 2, Wiley-VCH, 2010, pp. 362–65, doi:<a
    href="https://doi.org/10.1002/pssc.200982473">10.1002/pssc.200982473</a>.
  short: C. Thierfelder, S. Sanna, A. Schindlmayr, W.G. Schmidt, Physica Status Solidi
    C 7 (2010) 362–365.
conference:
  end_date: 2009-07-10
  location: Weimar
  name: 12th International Conference on the Formation of Semiconductor Interfaces
  start_date: 2009-07-05
date_created: 2019-10-01T09:18:29Z
date_updated: 2025-12-05T13:01:45Z
ddc:
- '530'
department:
- _id: '295'
- _id: '296'
- _id: '15'
- _id: '35'
- _id: '230'
- _id: '27'
- _id: '170'
doi: 10.1002/pssc.200982473
external_id:
  isi:
  - '000284313000057'
file:
- access_level: closed
  content_type: application/pdf
  creator: schindlm
  date_created: 2020-08-28T14:39:40Z
  date_updated: 2020-08-30T15:07:56Z
  description: © 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
  file_id: '18583'
  file_name: pssc.200982473.pdf
  file_size: 212674
  relation: main_file
  title: Do we know the band gap of lithium niobate?
file_date_updated: 2020-08-30T15:07:56Z
has_accepted_license: '1'
intvolume: '         7'
isi: '1'
issue: '2'
language:
- iso: eng
page: 362-365
project:
- _id: '52'
  name: Computing Resources Provided by the Paderborn Center for Parallel Computing
publication: Physica Status Solidi C
publication_identifier:
  eissn:
  - 1610-1642
  issn:
  - 1862-6351
publication_status: published
publisher: Wiley-VCH
quality_controlled: '1'
status: public
title: Do we know the band gap of lithium niobate?
type: journal_article
user_id: '16199'
volume: 7
year: '2010'
...
---
_id: '13574'
author:
- first_name: Uwe
  full_name: Gerstmann, Uwe
  id: '171'
  last_name: Gerstmann
  orcid: 0000-0002-4476-223X
- first_name: M.
  full_name: Rohrmüller, M.
  last_name: Rohrmüller
- first_name: F.
  full_name: Mauri, F.
  last_name: Mauri
- first_name: Wolf Gero
  full_name: Schmidt, Wolf Gero
  id: '468'
  last_name: Schmidt
  orcid: 0000-0002-2717-5076
citation:
  ama: 'Gerstmann U, Rohrmüller M, Mauri F, Schmidt WG. Ab initiog-tensor calculation
    for paramagnetic surface states: hydrogen adsorption at Si surfaces. <i>physica
    status solidi (c)</i>. 2010;7(2):157-160. doi:<a href="https://doi.org/10.1002/pssc.200982462">10.1002/pssc.200982462</a>'
  apa: 'Gerstmann, U., Rohrmüller, M., Mauri, F., &#38; Schmidt, W. G. (2010). Ab
    initiog-tensor calculation for paramagnetic surface states: hydrogen adsorption
    at Si surfaces. <i>Physica Status Solidi (c)</i>, <i>7</i>(2), 157–160. <a href="https://doi.org/10.1002/pssc.200982462">https://doi.org/10.1002/pssc.200982462</a>'
  bibtex: '@article{Gerstmann_Rohrmüller_Mauri_Schmidt_2010, title={Ab initiog-tensor
    calculation for paramagnetic surface states: hydrogen adsorption at Si surfaces},
    volume={7}, DOI={<a href="https://doi.org/10.1002/pssc.200982462">10.1002/pssc.200982462</a>},
    number={2}, journal={physica status solidi (c)}, author={Gerstmann, Uwe and Rohrmüller,
    M. and Mauri, F. and Schmidt, Wolf Gero}, year={2010}, pages={157–160} }'
  chicago: 'Gerstmann, Uwe, M. Rohrmüller, F. Mauri, and Wolf Gero Schmidt. “Ab Initiog-Tensor
    Calculation for Paramagnetic Surface States: Hydrogen Adsorption at Si Surfaces.”
    <i>Physica Status Solidi (c)</i> 7, no. 2 (2010): 157–60. <a href="https://doi.org/10.1002/pssc.200982462">https://doi.org/10.1002/pssc.200982462</a>.'
  ieee: 'U. Gerstmann, M. Rohrmüller, F. Mauri, and W. G. Schmidt, “Ab initiog-tensor
    calculation for paramagnetic surface states: hydrogen adsorption at Si surfaces,”
    <i>physica status solidi (c)</i>, vol. 7, no. 2, pp. 157–160, 2010, doi: <a href="https://doi.org/10.1002/pssc.200982462">10.1002/pssc.200982462</a>.'
  mla: 'Gerstmann, Uwe, et al. “Ab Initiog-Tensor Calculation for Paramagnetic Surface
    States: Hydrogen Adsorption at Si Surfaces.” <i>Physica Status Solidi (c)</i>,
    vol. 7, no. 2, 2010, pp. 157–60, doi:<a href="https://doi.org/10.1002/pssc.200982462">10.1002/pssc.200982462</a>.'
  short: U. Gerstmann, M. Rohrmüller, F. Mauri, W.G. Schmidt, Physica Status Solidi
    (c) 7 (2010) 157–160.
date_created: 2019-10-01T09:20:03Z
date_updated: 2025-12-05T12:45:54Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '35'
- _id: '790'
- _id: '230'
- _id: '27'
doi: 10.1002/pssc.200982462
intvolume: '         7'
issue: '2'
language:
- iso: eng
page: 157-160
project:
- _id: '52'
  name: Computing Resources Provided by the Paderborn Center for Parallel Computing
publication: physica status solidi (c)
publication_identifier:
  issn:
  - 1862-6351
  - 1610-1642
publication_status: published
status: public
title: 'Ab initiog-tensor calculation for paramagnetic surface states: hydrogen adsorption
  at Si surfaces'
type: journal_article
user_id: '16199'
volume: 7
year: '2010'
...
---
_id: '13656'
author:
- first_name: C.
  full_name: Bihler, C.
  last_name: Bihler
- first_name: Uwe
  full_name: Gerstmann, Uwe
  id: '171'
  last_name: Gerstmann
  orcid: 0000-0002-4476-223X
- first_name: M.
  full_name: Hoeb, M.
  last_name: Hoeb
- first_name: T.
  full_name: Graf, T.
  last_name: Graf
- first_name: M.
  full_name: Gjukic, M.
  last_name: Gjukic
- first_name: Wolf Gero
  full_name: Schmidt, Wolf Gero
  id: '468'
  last_name: Schmidt
  orcid: 0000-0002-2717-5076
- first_name: M.
  full_name: Stutzmann, M.
  last_name: Stutzmann
- first_name: M. S.
  full_name: Brandt, M. S.
  last_name: Brandt
citation:
  ama: Bihler C, Gerstmann U, Hoeb M, et al. Manganese-hydrogen complexes inGa1−xMnxN.
    <i>Physical Review B</i>. 2010;80(20). doi:<a href="https://doi.org/10.1103/physrevb.80.205205">10.1103/physrevb.80.205205</a>
  apa: Bihler, C., Gerstmann, U., Hoeb, M., Graf, T., Gjukic, M., Schmidt, W. G.,
    Stutzmann, M., &#38; Brandt, M. S. (2010). Manganese-hydrogen complexes inGa1−xMnxN.
    <i>Physical Review B</i>, <i>80</i>(20). <a href="https://doi.org/10.1103/physrevb.80.205205">https://doi.org/10.1103/physrevb.80.205205</a>
  bibtex: '@article{Bihler_Gerstmann_Hoeb_Graf_Gjukic_Schmidt_Stutzmann_Brandt_2010,
    title={Manganese-hydrogen complexes inGa1−xMnxN}, volume={80}, DOI={<a href="https://doi.org/10.1103/physrevb.80.205205">10.1103/physrevb.80.205205</a>},
    number={20}, journal={Physical Review B}, author={Bihler, C. and Gerstmann, Uwe
    and Hoeb, M. and Graf, T. and Gjukic, M. and Schmidt, Wolf Gero and Stutzmann,
    M. and Brandt, M. S.}, year={2010} }'
  chicago: Bihler, C., Uwe Gerstmann, M. Hoeb, T. Graf, M. Gjukic, Wolf Gero Schmidt,
    M. Stutzmann, and M. S. Brandt. “Manganese-Hydrogen Complexes InGa1−xMnxN.” <i>Physical
    Review B</i> 80, no. 20 (2010). <a href="https://doi.org/10.1103/physrevb.80.205205">https://doi.org/10.1103/physrevb.80.205205</a>.
  ieee: 'C. Bihler <i>et al.</i>, “Manganese-hydrogen complexes inGa1−xMnxN,” <i>Physical
    Review B</i>, vol. 80, no. 20, 2010, doi: <a href="https://doi.org/10.1103/physrevb.80.205205">10.1103/physrevb.80.205205</a>.'
  mla: Bihler, C., et al. “Manganese-Hydrogen Complexes InGa1−xMnxN.” <i>Physical
    Review B</i>, vol. 80, no. 20, 2010, doi:<a href="https://doi.org/10.1103/physrevb.80.205205">10.1103/physrevb.80.205205</a>.
  short: C. Bihler, U. Gerstmann, M. Hoeb, T. Graf, M. Gjukic, W.G. Schmidt, M. Stutzmann,
    M.S. Brandt, Physical Review B 80 (2010).
date_created: 2019-10-09T09:00:28Z
date_updated: 2025-12-05T13:14:00Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '790'
- _id: '35'
- _id: '230'
doi: 10.1103/physrevb.80.205205
intvolume: '        80'
issue: '20'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
  issn:
  - 1098-0121
  - 1550-235X
publication_status: published
status: public
title: Manganese-hydrogen complexes inGa1−xMnxN
type: journal_article
user_id: '16199'
volume: 80
year: '2010'
...
