---
_id: '4210'
abstract:
- lang: eng
text: "In this paper we demonstrate a strain-driven GaN interlayer method to reduce
dislocation densities in GaN grown on (111) oriented silicon by metal organic
vapour phase epitaxy (MOVPE). In order to achieve crack-free GaN layers of\r\nreasonable
thicknesses and dislocation densities it is crucial to integrate both dislocation
reduction and strain management layers. In contrast to techniques like FACELO
or nanoELO we show the in situ formation of GaN islands directly on the AlN nucleation
layer without the need to deposit a SiO2 or SiNx mask. A graded AlGaN layer for
strain management can be grown on top of this dislocation reducing 3D GaN inter-layer
in order to achieve crack-free GaN layers grown on top of the AlGaN strain management
layer. Furthermore, an additional SiNx layer for subsequent dislocation reduction
can also be incorporated into the structure and is shown to efficiently reduce
the dislocation density down to the low 10^9 cm^2. The structural properties of
the 3D GaN island buffer layer and overgrown\r\nsamples are studied by means of
SEM, cross-sectional, and plan view TEM. Cathodoluminiscence in an SEM is employed
to correlate the dislocation microstructure as observed by plan view TEM with
luminescent properties."
article_type: original
author:
- first_name: Maik
full_name: Häberlen, Maik
last_name: Häberlen
- first_name: Dandan
full_name: Zhu, Dandan
last_name: Zhu
- first_name: Clifford
full_name: McAleese, Clifford
last_name: McAleese
- first_name: Tongtong
full_name: Zhu, Tongtong
last_name: Zhu
- first_name: Menno J.
full_name: Kappers, Menno J.
last_name: Kappers
- first_name: Colin J.
full_name: Humphreys, Colin J.
last_name: Humphreys
citation:
ama: Häberlen M, Zhu D, McAleese C, Zhu T, Kappers MJ, Humphreys CJ. Dislocation
reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer. physica
status solidi (b). 2010;247(7):1753-1756. doi:10.1002/pssb.200983537
apa: Häberlen, M., Zhu, D., McAleese, C., Zhu, T., Kappers, M. J., & Humphreys,
C. J. (2010). Dislocation reduction in GaN grown on Si(111) using a strain-driven
3D GaN interlayer. Physica Status Solidi (B), 247(7), 1753–1756.
https://doi.org/10.1002/pssb.200983537
bibtex: '@article{Häberlen_Zhu_McAleese_Zhu_Kappers_Humphreys_2010, title={Dislocation
reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer}, volume={247},
DOI={10.1002/pssb.200983537},
number={7}, journal={physica status solidi (b)}, publisher={Wiley}, author={Häberlen,
Maik and Zhu, Dandan and McAleese, Clifford and Zhu, Tongtong and Kappers, Menno
J. and Humphreys, Colin J.}, year={2010}, pages={1753–1756} }'
chicago: 'Häberlen, Maik, Dandan Zhu, Clifford McAleese, Tongtong Zhu, Menno J.
Kappers, and Colin J. Humphreys. “Dislocation Reduction in GaN Grown on Si(111)
Using a Strain-Driven 3D GaN Interlayer.” Physica Status Solidi (B) 247,
no. 7 (2010): 1753–56. https://doi.org/10.1002/pssb.200983537.'
ieee: M. Häberlen, D. Zhu, C. McAleese, T. Zhu, M. J. Kappers, and C. J. Humphreys,
“Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer,”
physica status solidi (b), vol. 247, no. 7, pp. 1753–1756, 2010.
mla: Häberlen, Maik, et al. “Dislocation Reduction in GaN Grown on Si(111) Using
a Strain-Driven 3D GaN Interlayer.” Physica Status Solidi (B), vol. 247,
no. 7, Wiley, 2010, pp. 1753–56, doi:10.1002/pssb.200983537.
short: M. Häberlen, D. Zhu, C. McAleese, T. Zhu, M.J. Kappers, C.J. Humphreys, Physica
Status Solidi (B) 247 (2010) 1753–1756.
date_created: 2018-08-28T12:42:58Z
date_updated: 2022-01-06T07:00:36Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1002/pssb.200983537
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:43:31Z
date_updated: 2018-08-28T12:43:31Z
file_id: '4211'
file_name: Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D
GaN interlayer.pdf
file_size: 911931
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:43:31Z
has_accepted_license: '1'
intvolume: ' 247'
issue: '7'
language:
- iso: eng
page: 1753-1756
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
- 1521-3951
publication_status: published
publisher: Wiley
status: public
title: Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN
interlayer
type: journal_article
user_id: '55706'
volume: 247
year: '2010'
...
---
_id: '4212'
abstract:
- lang: eng
text: "Low temperature cathodo- and photoluminescence has been performed on nonpolar
a-plane GaN films grown using epitaxial lateral overgrowth. In films overgrown
at a low V–III ratio, the emission spectrum is dominated by “yellow” and “blue”
luminescence bands, attributed to recombination at point defects or impurities.
The intensity of this emission is observed to decrease steadily across the window
region along the −c direction, possibly due to asymmetric diffusion of a point
defect/impurity species. When overgrown at a higher V–III ratio, the near band
edge and basal-plane stacking fault emission intensity increases by orders of
magnitude and a donor–acceptor pair band is observed. Using monochromatic cathodoluminescence
imaging, the various emission features are correlated with the microstructure
of the film. In particular, the peak energy of the basal-plane stacking fault
emission is seen to be blueshifted by \x0415 meV in the wing relative to the window
region, which may be related to the different strain states in the respective
regions."
article_number: '033523'
article_type: original
author:
- first_name: M.
full_name: Häberlen, M.
last_name: Häberlen
- first_name: T. J.
full_name: Badcock, T. J.
last_name: Badcock
- first_name: M. A.
full_name: Moram, M. A.
last_name: Moram
- first_name: J. L.
full_name: Hollander, J. L.
last_name: Hollander
- first_name: M. J.
full_name: Kappers, M. J.
last_name: Kappers
- first_name: P.
full_name: Dawson, P.
last_name: Dawson
- first_name: C. J.
full_name: Humphreys, C. J.
last_name: Humphreys
- first_name: R. A.
full_name: Oliver, R. A.
last_name: Oliver
citation:
ama: Häberlen M, Badcock TJ, Moram MA, et al. Low temperature photoluminescence
and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral
overgrowth. Journal of Applied Physics. 2010;108(3). doi:10.1063/1.3460641
apa: Häberlen, M., Badcock, T. J., Moram, M. A., Hollander, J. L., Kappers, M. J.,
Dawson, P., … Oliver, R. A. (2010). Low temperature photoluminescence and cathodoluminescence
studies of nonpolar GaN grown using epitaxial lateral overgrowth. Journal of
Applied Physics, 108(3). https://doi.org/10.1063/1.3460641
bibtex: '@article{Häberlen_Badcock_Moram_Hollander_Kappers_Dawson_Humphreys_Oliver_2010,
title={Low temperature photoluminescence and cathodoluminescence studies of nonpolar
GaN grown using epitaxial lateral overgrowth}, volume={108}, DOI={10.1063/1.3460641},
number={3033523}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Häberlen, M. and Badcock, T. J. and Moram, M. A. and Hollander, J. L.
and Kappers, M. J. and Dawson, P. and Humphreys, C. J. and Oliver, R. A.}, year={2010}
}'
chicago: Häberlen, M., T. J. Badcock, M. A. Moram, J. L. Hollander, M. J. Kappers,
P. Dawson, C. J. Humphreys, and R. A. Oliver. “Low Temperature Photoluminescence
and Cathodoluminescence Studies of Nonpolar GaN Grown Using Epitaxial Lateral
Overgrowth.” Journal of Applied Physics 108, no. 3 (2010). https://doi.org/10.1063/1.3460641.
ieee: M. Häberlen et al., “Low temperature photoluminescence and cathodoluminescence
studies of nonpolar GaN grown using epitaxial lateral overgrowth,” Journal
of Applied Physics, vol. 108, no. 3, 2010.
mla: Häberlen, M., et al. “Low Temperature Photoluminescence and Cathodoluminescence
Studies of Nonpolar GaN Grown Using Epitaxial Lateral Overgrowth.” Journal
of Applied Physics, vol. 108, no. 3, 033523, AIP Publishing, 2010, doi:10.1063/1.3460641.
short: M. Häberlen, T.J. Badcock, M.A. Moram, J.L. Hollander, M.J. Kappers, P. Dawson,
C.J. Humphreys, R.A. Oliver, Journal of Applied Physics 108 (2010).
date_created: 2018-08-28T12:46:49Z
date_updated: 2022-01-06T07:00:37Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1063/1.3460641
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:47:23Z
date_updated: 2018-08-28T12:47:23Z
file_id: '4213'
file_name: Low temperature photoluminescence and cathodoluminescence studies of
non-polar GaN grown using epitaxial lateral overgrowth.pdf
file_size: 2391054
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:47:23Z
has_accepted_license: '1'
intvolume: ' 108'
issue: '3'
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Low temperature photoluminescence and cathodoluminescence studies of nonpolar
GaN grown using epitaxial lateral overgrowth
type: journal_article
user_id: '55706'
volume: 108
year: '2010'
...
---
_id: '4214'
abstract:
- lang: eng
text: "Non-polar a -plane (1 1 2 ̄ 0) GaN films were grown on r-plane sapphire by
metal–organic vapor phase epitaxy and were subsequently annealed for 90 min at
1070°C. Most dislocations were partial\r\ndislocations, which terminated basal
plane stacking faults. Prior to annealing, these dislocations were\r\nrandomly
distributed. After annealing, these dislocations moved into arrays oriented along
the [0 0 0 1]\r\ndirection and aligned perpendicular to the film–substrate interface
throughout their length, although\r\nthe total dislocation density remained unchanged.
These changes were accompanied by broadening of\r\nthe symmetric X-ray diffraction
1 1 2 ̄ 0 w-scan widths. The mechanism of movement was identified as\r\ndislocation
glide, occurring due to highly anisotropic stresses (confirmed by X-ray diffraction
lattice\r\nparameter measurements) and evidenced by macroscopic slip bands observed
on the sample surface.\r\nThere was also an increase in the density of unintentionally
n-type doped electrically conductive\r\ninclined features present at the film–substrate
interface (as observed in cross-section using scanning\r\ncapacitance microscopy),
suggesting out-diffusion of impurities from the substrate along with prismatic\r\nstacking
faults. These data suggest that annealing processes performed close to film growth\r\ntemperatures
can affect both the microstructure and the electrical properties of non-polar
GaN films."
article_type: original
author:
- first_name: Rui
full_name: Hao, Rui
last_name: Hao
- first_name: T.
full_name: Zhu, T.
last_name: Zhu
- first_name: M.
full_name: Häberlen, M.
last_name: Häberlen
- first_name: T.Y.
full_name: Chang, T.Y.
last_name: Chang
- first_name: M.J.
full_name: Kappers, M.J.
last_name: Kappers
- first_name: R.A.
full_name: Oliver, R.A.
last_name: Oliver
- first_name: C.J.
full_name: Humphreys, C.J.
last_name: Humphreys
- first_name: M.A.
full_name: Moram, M.A.
last_name: Moram
citation:
ama: Hao R, Zhu T, Häberlen M, et al. The effects of annealing on non-polar (112¯0)
a-plane GaN films. Journal of Crystal Growth. 2010;312(23):3536-3543. doi:10.1016/j.jcrysgro.2010.08.041
apa: Hao, R., Zhu, T., Häberlen, M., Chang, T. Y., Kappers, M. J., Oliver, R. A.,
… Moram, M. A. (2010). The effects of annealing on non-polar (112¯0) a-plane GaN
films. Journal of Crystal Growth, 312(23), 3536–3543. https://doi.org/10.1016/j.jcrysgro.2010.08.041
bibtex: '@article{Hao_Zhu_Häberlen_Chang_Kappers_Oliver_Humphreys_Moram_2010, title={The
effects of annealing on non-polar (112¯0) a-plane GaN films}, volume={312}, DOI={10.1016/j.jcrysgro.2010.08.041},
number={23}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Hao,
Rui and Zhu, T. and Häberlen, M. and Chang, T.Y. and Kappers, M.J. and Oliver,
R.A. and Humphreys, C.J. and Moram, M.A.}, year={2010}, pages={3536–3543} }'
chicago: 'Hao, Rui, T. Zhu, M. Häberlen, T.Y. Chang, M.J. Kappers, R.A. Oliver,
C.J. Humphreys, and M.A. Moram. “The Effects of Annealing on Non-Polar (112¯0)
a-Plane GaN Films.” Journal of Crystal Growth 312, no. 23 (2010): 3536–43.
https://doi.org/10.1016/j.jcrysgro.2010.08.041.'
ieee: R. Hao et al., “The effects of annealing on non-polar (112¯0) a-plane
GaN films,” Journal of Crystal Growth, vol. 312, no. 23, pp. 3536–3543,
2010.
mla: Hao, Rui, et al. “The Effects of Annealing on Non-Polar (112¯0) a-Plane GaN
Films.” Journal of Crystal Growth, vol. 312, no. 23, Elsevier BV, 2010,
pp. 3536–43, doi:10.1016/j.jcrysgro.2010.08.041.
short: R. Hao, T. Zhu, M. Häberlen, T.Y. Chang, M.J. Kappers, R.A. Oliver, C.J.
Humphreys, M.A. Moram, Journal of Crystal Growth 312 (2010) 3536–3543.
date_created: 2018-08-28T12:49:39Z
date_updated: 2022-01-06T07:00:37Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1016/j.jcrysgro.2010.08.041
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:50:07Z
date_updated: 2018-08-28T12:50:07Z
file_id: '4215'
file_name: The effects of annealing on non-polar (11-20) a-plane GaN films.pdf
file_size: 1218752
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:50:07Z
has_accepted_license: '1'
intvolume: ' 312'
issue: '23'
language:
- iso: eng
page: 3536-3543
publication: Journal of Crystal Growth
publication_identifier:
issn:
- 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: The effects of annealing on non-polar (112¯0) a-plane GaN films
type: journal_article
user_id: '55706'
volume: 312
year: '2010'
...
---
_id: '4216'
abstract:
- lang: eng
text: "In non-annealed 6H-SiC samples that were electron irradiated at room temperature,
a new\r\nEPR signal due to a S=1 defect center with exceptionally large zero-field
splitting (D = +652·10-4\r\ncm-1) has been observed under illumination. A positive
sign of D demonstrates that the spin-orbit\r\ncontribution to the zero-field splitting
exceeds by far that of the spin-spin interaction. A principal\r\naxis of the fine
structure tilted by 59° against the crystal c-axis as well as the exceptionally
high\r\nzero-field splitting D can be qualitatively understood by the occurrence
of additional close-lying\r\ndefect levels in defect clusters resulting in comparatively
large second-order spin-orbit coupling. A\r\ntentative assignment to vacancy clusters
is supported by the observed annealing behavior."
article_type: original
author:
- first_name: Andreas
full_name: Scholle, Andreas
last_name: Scholle
- first_name: Siegmund
full_name: Greulich-Weber, Siegmund
last_name: Greulich-Weber
- first_name: Eva
full_name: Rauls, Eva
last_name: Rauls
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
last_name: Schmidt
- first_name: Uwe
full_name: Gerstmann, Uwe
last_name: Gerstmann
citation:
ama: Scholle A, Greulich-Weber S, Rauls E, Schmidt WG, Gerstmann U. Fine Structure
of Triplet Centers in Room Temperature Irradiated 6H-SiC. Materials Science
Forum. 2010;645-648:403-406. doi:10.4028/www.scientific.net/msf.645-648.403
apa: Scholle, A., Greulich-Weber, S., Rauls, E., Schmidt, W. G., & Gerstmann,
U. (2010). Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC.
Materials Science Forum, 645–648, 403–406. https://doi.org/10.4028/www.scientific.net/msf.645-648.403
bibtex: '@article{Scholle_Greulich-Weber_Rauls_Schmidt_Gerstmann_2010, title={Fine
Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC}, volume={645–648},
DOI={10.4028/www.scientific.net/msf.645-648.403},
journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Scholle,
Andreas and Greulich-Weber, Siegmund and Rauls, Eva and Schmidt, Wolf Gero and
Gerstmann, Uwe}, year={2010}, pages={403–406} }'
chicago: 'Scholle, Andreas, Siegmund Greulich-Weber, Eva Rauls, Wolf Gero Schmidt,
and Uwe Gerstmann. “Fine Structure of Triplet Centers in Room Temperature Irradiated
6H-SiC.” Materials Science Forum 645–648 (2010): 403–6. https://doi.org/10.4028/www.scientific.net/msf.645-648.403.'
ieee: A. Scholle, S. Greulich-Weber, E. Rauls, W. G. Schmidt, and U. Gerstmann,
“Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC,” Materials
Science Forum, vol. 645–648, pp. 403–406, 2010.
mla: Scholle, Andreas, et al. “Fine Structure of Triplet Centers in Room Temperature
Irradiated 6H-SiC.” Materials Science Forum, vol. 645–648, Trans Tech Publications,
2010, pp. 403–06, doi:10.4028/www.scientific.net/msf.645-648.403.
short: A. Scholle, S. Greulich-Weber, E. Rauls, W.G. Schmidt, U. Gerstmann, Materials
Science Forum 645–648 (2010) 403–406.
date_created: 2018-08-28T12:53:50Z
date_updated: 2022-01-06T07:00:38Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.4028/www.scientific.net/msf.645-648.403
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:54:26Z
date_updated: 2018-08-28T12:54:26Z
file_id: '4217'
file_name: Fine structure of triplet centers in room temperature irradiated 6H-SiC.pdf
file_size: 583484
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:54:26Z
has_accepted_license: '1'
language:
- iso: eng
page: 403-406
publication: Materials Science Forum
publication_identifier:
issn:
- 1662-9752
publication_status: published
publisher: Trans Tech Publications
status: public
title: Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC
type: journal_article
user_id: '55706'
volume: 645-648
year: '2010'
...
---
_id: '6619'
abstract:
- lang: ger
text: Strömungsbasierte Mischprozesse sind grundlegender Bestandteil vieler chemischer
Prozesse. Realisierbare Mischzeiten reichen von einigen Millisekunden bis zu Sekunden,
wobei die vollständige Homogenisierung oft nicht sichergestellt ist. Werden kinetische
Parameter chemischer Reaktionen dieses Zeitskalenbereichs ohne Berücksichtigung
der Mischprozesse bestimmt, sind sie mischungsmaskiert und geben die inhärente
chemische Kinetik nicht wieder. In dieser Arbeit wird die Validierung und Anwendung
einer Methode zur Bestimmung inhärenter chemischer Kinetiken von in Flüssigphase
ablaufenden chemischen Reaktionen im stationären, laminaren Flachbettmikroreaktor
vorgestellt. Der verfolgte Ansatz basiert auf der mechanistischen Modellierung
der Molmengen unter Berücksichtigung von Konvektion, Diffusion und Reaktion und
der Bestimmung der unbekannten Parameter durch Anpassung des Modells an experimentell
ermittelte Konzentrationsverläufe.
article_type: original
author:
- first_name: H.-J.
full_name: Warnecke, H.-J.
last_name: Warnecke
- first_name: D.
full_name: Bothe, D.
last_name: Bothe
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: Gerhard
full_name: Berth, Gerhard
id: '53'
last_name: Berth
- first_name: K.-P.
full_name: Hüsch, K.-P.
last_name: Hüsch
citation:
ama: Warnecke H-J, Bothe D, Zrenner A, Berth G, Hüsch K-P. Modellbasierte Bestimmung
lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*.
Chemie Ingenieur Technik. 2010;82(3):251-258. doi:10.1002/cite.200900169
apa: Warnecke, H.-J., Bothe, D., Zrenner, A., Berth, G., & Hüsch, K.-P. (2010).
Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase
mittels Flachbettmikroreaktor*. Chemie Ingenieur Technik, 82(3),
251–258. https://doi.org/10.1002/cite.200900169
bibtex: '@article{Warnecke_Bothe_Zrenner_Berth_Hüsch_2010, title={Modellbasierte
Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels
Flachbettmikroreaktor*}, volume={82}, DOI={10.1002/cite.200900169},
number={3}, journal={Chemie Ingenieur Technik}, publisher={Wiley}, author={Warnecke,
H.-J. and Bothe, D. and Zrenner, Artur and Berth, Gerhard and Hüsch, K.-P.}, year={2010},
pages={251–258} }'
chicago: 'Warnecke, H.-J., D. Bothe, Artur Zrenner, Gerhard Berth, and K.-P. Hüsch.
“Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase
mittels Flachbettmikroreaktor*.” Chemie Ingenieur Technik 82, no. 3 (2010):
251–58. https://doi.org/10.1002/cite.200900169.'
ieee: H.-J. Warnecke, D. Bothe, A. Zrenner, G. Berth, and K.-P. Hüsch, “Modellbasierte
Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels
Flachbettmikroreaktor*,” Chemie Ingenieur Technik, vol. 82, no. 3, pp.
251–258, 2010.
mla: Warnecke, H. J., et al. “Modellbasierte Bestimmung lokal gültiger Kinetiken
chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*.” Chemie
Ingenieur Technik, vol. 82, no. 3, Wiley, 2010, pp. 251–58, doi:10.1002/cite.200900169.
short: H.-J. Warnecke, D. Bothe, A. Zrenner, G. Berth, K.-P. Hüsch, Chemie Ingenieur
Technik 82 (2010) 251–258.
date_created: 2019-01-10T10:13:09Z
date_updated: 2022-01-06T07:03:13Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1002/cite.200900169
intvolume: ' 82'
issue: '3'
language:
- iso: ger
page: 251-258
publication: Chemie Ingenieur Technik
publication_identifier:
issn:
- 0009-286X
- 1522-2640
publication_status: published
publisher: Wiley
status: public
title: Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in
Flüssigphase mittels Flachbettmikroreaktor*
type: journal_article
user_id: '49428'
volume: 82
year: '2010'
...
---
_id: '7993'
author:
- first_name: Karoline A.
full_name: Piegdon, Karoline A.
last_name: Piegdon
- first_name: Matthias
full_name: Offer, Matthias
last_name: Offer
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
- first_name: Martin
full_name: Urbanski, Martin
last_name: Urbanski
- first_name: Andreas
full_name: Hoischen, Andreas
last_name: Hoischen
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
- first_name: Stefan
full_name: Declair, Stefan
last_name: Declair
- first_name: Jens
full_name: Förstner, Jens
last_name: Förstner
- first_name: Torsten
full_name: Meier, Torsten
last_name: Meier
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Cedrik
full_name: Meier, Cedrik
last_name: Meier
citation:
ama: 'Piegdon KA, Offer M, Lorke A, et al. Self-assembled quantum dots in a liquid-crystal-tunable
microdisk resonator. Physica E: Low-dimensional Systems and Nanostructures.
2010;42(10):2552-2555. doi:10.1016/j.physe.2009.12.051'
apa: 'Piegdon, K. A., Offer, M., Lorke, A., Urbanski, M., Hoischen, A., Kitzerow,
H.-S., Declair, S., Förstner, J., Meier, T., Reuter, D., Wieck, A. D., & Meier,
C. (2010). Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator.
Physica E: Low-Dimensional Systems and Nanostructures, 42(10), 2552–2555.
https://doi.org/10.1016/j.physe.2009.12.051'
bibtex: '@article{Piegdon_Offer_Lorke_Urbanski_Hoischen_Kitzerow_Declair_Förstner_Meier_Reuter_et
al._2010, title={Self-assembled quantum dots in a liquid-crystal-tunable microdisk
resonator}, volume={42}, DOI={10.1016/j.physe.2009.12.051},
number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures},
publisher={Elsevier BV}, author={Piegdon, Karoline A. and Offer, Matthias and
Lorke, Axel and Urbanski, Martin and Hoischen, Andreas and Kitzerow, Heinz-Siegfried
and Declair, Stefan and Förstner, Jens and Meier, Torsten and Reuter, Dirk and
et al.}, year={2010}, pages={2552–2555} }'
chicago: 'Piegdon, Karoline A., Matthias Offer, Axel Lorke, Martin Urbanski, Andreas
Hoischen, Heinz-Siegfried Kitzerow, Stefan Declair, et al. “Self-Assembled Quantum
Dots in a Liquid-Crystal-Tunable Microdisk Resonator.” Physica E: Low-Dimensional
Systems and Nanostructures 42, no. 10 (2010): 2552–55. https://doi.org/10.1016/j.physe.2009.12.051.'
ieee: 'K. A. Piegdon et al., “Self-assembled quantum dots in a liquid-crystal-tunable
microdisk resonator,” Physica E: Low-dimensional Systems and Nanostructures,
vol. 42, no. 10, pp. 2552–2555, 2010, doi: 10.1016/j.physe.2009.12.051.'
mla: 'Piegdon, Karoline A., et al. “Self-Assembled Quantum Dots in a Liquid-Crystal-Tunable
Microdisk Resonator.” Physica E: Low-Dimensional Systems and Nanostructures,
vol. 42, no. 10, Elsevier BV, 2010, pp. 2552–55, doi:10.1016/j.physe.2009.12.051.'
short: 'K.A. Piegdon, M. Offer, A. Lorke, M. Urbanski, A. Hoischen, H.-S. Kitzerow,
S. Declair, J. Förstner, T. Meier, D. Reuter, A.D. Wieck, C. Meier, Physica E:
Low-Dimensional Systems and Nanostructures 42 (2010) 2552–2555.'
date_created: 2019-02-21T14:43:30Z
date_updated: 2023-01-10T13:59:58Z
department:
- _id: '15'
- _id: '230'
- _id: '313'
doi: 10.1016/j.physe.2009.12.051
intvolume: ' 42'
issue: '10'
language:
- iso: eng
page: 2552-2555
publication: 'Physica E: Low-dimensional Systems and Nanostructures'
publication_identifier:
issn:
- 1386-9477
publication_status: published
publisher: Elsevier BV
status: public
title: Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator
type: journal_article
user_id: '254'
volume: 42
year: '2010'
...
---
_id: '40194'
article_number: '253603'
author:
- first_name: Kaisa
full_name: Laiho, Kaisa
last_name: Laiho
- first_name: Katiúscia N.
full_name: Cassemiro, Katiúscia N.
last_name: Cassemiro
- first_name: David
full_name: Gross, David
last_name: Gross
- first_name: Christine
full_name: Silberhorn, Christine
id: '26263'
last_name: Silberhorn
citation:
ama: Laiho K, Cassemiro KN, Gross D, Silberhorn C. Probing the Negative Wigner Function
of a Pulsed Single Photon Point by Point. Physical Review Letters. 2010;105(25).
doi:10.1103/physrevlett.105.253603
apa: Laiho, K., Cassemiro, K. N., Gross, D., & Silberhorn, C. (2010). Probing
the Negative Wigner Function of a Pulsed Single Photon Point by Point. Physical
Review Letters, 105(25), Article 253603. https://doi.org/10.1103/physrevlett.105.253603
bibtex: '@article{Laiho_Cassemiro_Gross_Silberhorn_2010, title={Probing the Negative
Wigner Function of a Pulsed Single Photon Point by Point}, volume={105}, DOI={10.1103/physrevlett.105.253603},
number={25253603}, journal={Physical Review Letters}, publisher={American Physical
Society (APS)}, author={Laiho, Kaisa and Cassemiro, Katiúscia N. and Gross, David
and Silberhorn, Christine}, year={2010} }'
chicago: Laiho, Kaisa, Katiúscia N. Cassemiro, David Gross, and Christine Silberhorn.
“Probing the Negative Wigner Function of a Pulsed Single Photon Point by Point.”
Physical Review Letters 105, no. 25 (2010). https://doi.org/10.1103/physrevlett.105.253603.
ieee: 'K. Laiho, K. N. Cassemiro, D. Gross, and C. Silberhorn, “Probing the Negative
Wigner Function of a Pulsed Single Photon Point by Point,” Physical Review
Letters, vol. 105, no. 25, Art. no. 253603, 2010, doi: 10.1103/physrevlett.105.253603.'
mla: Laiho, Kaisa, et al. “Probing the Negative Wigner Function of a Pulsed Single
Photon Point by Point.” Physical Review Letters, vol. 105, no. 25, 253603,
American Physical Society (APS), 2010, doi:10.1103/physrevlett.105.253603.
short: K. Laiho, K.N. Cassemiro, D. Gross, C. Silberhorn, Physical Review Letters
105 (2010).
date_created: 2023-01-26T08:28:09Z
date_updated: 2023-01-30T12:52:26Z
department:
- _id: '288'
- _id: '15'
doi: 10.1103/physrevlett.105.253603
intvolume: ' 105'
issue: '25'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Physical Review Letters
publication_identifier:
issn:
- 0031-9007
- 1079-7114
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Probing the Negative Wigner Function of a Pulsed Single Photon Point by Point
type: journal_article
user_id: '26263'
volume: 105
year: '2010'
...
---
_id: '40195'
article_number: '113052'
author:
- first_name: Katiúscia N
full_name: Cassemiro, Katiúscia N
last_name: Cassemiro
- first_name: Kaisa
full_name: Laiho, Kaisa
last_name: Laiho
- first_name: Christine
full_name: Silberhorn, Christine
id: '26263'
last_name: Silberhorn
citation:
ama: Cassemiro KN, Laiho K, Silberhorn C. Accessing the purity of a single photon
by the width of the Hong–Ou–Mandel interference. New Journal of Physics.
2010;12(11). doi:10.1088/1367-2630/12/11/113052
apa: Cassemiro, K. N., Laiho, K., & Silberhorn, C. (2010). Accessing the purity
of a single photon by the width of the Hong–Ou–Mandel interference. New Journal
of Physics, 12(11), Article 113052. https://doi.org/10.1088/1367-2630/12/11/113052
bibtex: '@article{Cassemiro_Laiho_Silberhorn_2010, title={Accessing the purity of
a single photon by the width of the Hong–Ou–Mandel interference}, volume={12},
DOI={10.1088/1367-2630/12/11/113052},
number={11113052}, journal={New Journal of Physics}, publisher={IOP Publishing},
author={Cassemiro, Katiúscia N and Laiho, Kaisa and Silberhorn, Christine}, year={2010}
}'
chicago: Cassemiro, Katiúscia N, Kaisa Laiho, and Christine Silberhorn. “Accessing
the Purity of a Single Photon by the Width of the Hong–Ou–Mandel Interference.”
New Journal of Physics 12, no. 11 (2010). https://doi.org/10.1088/1367-2630/12/11/113052.
ieee: 'K. N. Cassemiro, K. Laiho, and C. Silberhorn, “Accessing the purity of a
single photon by the width of the Hong–Ou–Mandel interference,” New Journal
of Physics, vol. 12, no. 11, Art. no. 113052, 2010, doi: 10.1088/1367-2630/12/11/113052.'
mla: Cassemiro, Katiúscia N., et al. “Accessing the Purity of a Single Photon by
the Width of the Hong–Ou–Mandel Interference.” New Journal of Physics,
vol. 12, no. 11, 113052, IOP Publishing, 2010, doi:10.1088/1367-2630/12/11/113052.
short: K.N. Cassemiro, K. Laiho, C. Silberhorn, New Journal of Physics 12 (2010).
date_created: 2023-01-26T08:29:50Z
date_updated: 2023-01-30T12:53:06Z
department:
- _id: '288'
- _id: '15'
doi: 10.1088/1367-2630/12/11/113052
intvolume: ' 12'
issue: '11'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: New Journal of Physics
publication_identifier:
issn:
- 1367-2630
publication_status: published
publisher: IOP Publishing
status: public
title: Accessing the purity of a single photon by the width of the Hong–Ou–Mandel
interference
type: journal_article
user_id: '26263'
volume: 12
year: '2010'
...
---
_id: '40206'
article_number: '050502'
author:
- first_name: A.
full_name: Schreiber, A.
last_name: Schreiber
- first_name: K. N.
full_name: Cassemiro, K. N.
last_name: Cassemiro
- first_name: V.
full_name: Potoček, V.
last_name: Potoček
- first_name: A.
full_name: Gábris, A.
last_name: Gábris
- first_name: P. J.
full_name: Mosley, P. J.
last_name: Mosley
- first_name: E.
full_name: Andersson, E.
last_name: Andersson
- first_name: I.
full_name: Jex, I.
last_name: Jex
- first_name: Christine
full_name: Silberhorn, Christine
id: '26263'
last_name: Silberhorn
citation:
ama: 'Schreiber A, Cassemiro KN, Potoček V, et al. Photons Walking the Line: A Quantum
Walk with Adjustable Coin Operations. Physical Review Letters. 2010;104(5).
doi:10.1103/physrevlett.104.050502'
apa: 'Schreiber, A., Cassemiro, K. N., Potoček, V., Gábris, A., Mosley, P. J., Andersson,
E., Jex, I., & Silberhorn, C. (2010). Photons Walking the Line: A Quantum
Walk with Adjustable Coin Operations. Physical Review Letters, 104(5),
Article 050502. https://doi.org/10.1103/physrevlett.104.050502'
bibtex: '@article{Schreiber_Cassemiro_Potoček_Gábris_Mosley_Andersson_Jex_Silberhorn_2010,
title={Photons Walking the Line: A Quantum Walk with Adjustable Coin Operations},
volume={104}, DOI={10.1103/physrevlett.104.050502},
number={5050502}, journal={Physical Review Letters}, publisher={American Physical
Society (APS)}, author={Schreiber, A. and Cassemiro, K. N. and Potoček, V. and
Gábris, A. and Mosley, P. J. and Andersson, E. and Jex, I. and Silberhorn, Christine},
year={2010} }'
chicago: 'Schreiber, A., K. N. Cassemiro, V. Potoček, A. Gábris, P. J. Mosley, E.
Andersson, I. Jex, and Christine Silberhorn. “Photons Walking the Line: A Quantum
Walk with Adjustable Coin Operations.” Physical Review Letters 104, no.
5 (2010). https://doi.org/10.1103/physrevlett.104.050502.'
ieee: 'A. Schreiber et al., “Photons Walking the Line: A Quantum Walk with
Adjustable Coin Operations,” Physical Review Letters, vol. 104, no. 5,
Art. no. 050502, 2010, doi: 10.1103/physrevlett.104.050502.'
mla: 'Schreiber, A., et al. “Photons Walking the Line: A Quantum Walk with Adjustable
Coin Operations.” Physical Review Letters, vol. 104, no. 5, 050502, American
Physical Society (APS), 2010, doi:10.1103/physrevlett.104.050502.'
short: A. Schreiber, K.N. Cassemiro, V. Potoček, A. Gábris, P.J. Mosley, E. Andersson,
I. Jex, C. Silberhorn, Physical Review Letters 104 (2010).
date_created: 2023-01-26T08:39:44Z
date_updated: 2023-01-30T12:56:01Z
department:
- _id: '288'
- _id: '15'
doi: 10.1103/physrevlett.104.050502
intvolume: ' 104'
issue: '5'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Physical Review Letters
publication_identifier:
issn:
- 0031-9007
- 1079-7114
publication_status: published
publisher: American Physical Society (APS)
status: public
title: 'Photons Walking the Line: A Quantum Walk with Adjustable Coin Operations'
type: journal_article
user_id: '26263'
volume: 104
year: '2010'
...
---
_id: '40204'
article_number: '063602'
author:
- first_name: M.
full_name: Avenhaus, M.
last_name: Avenhaus
- first_name: K.
full_name: Laiho, K.
last_name: Laiho
- first_name: M. V.
full_name: Chekhova, M. V.
last_name: Chekhova
- first_name: Christine
full_name: Silberhorn, Christine
id: '26263'
last_name: Silberhorn
citation:
ama: Avenhaus M, Laiho K, Chekhova MV, Silberhorn C. Accessing Higher Order Correlations
in Quantum Optical States by Time Multiplexing. Physical Review Letters.
2010;104(6). doi:10.1103/physrevlett.104.063602
apa: Avenhaus, M., Laiho, K., Chekhova, M. V., & Silberhorn, C. (2010). Accessing
Higher Order Correlations in Quantum Optical States by Time Multiplexing. Physical
Review Letters, 104(6), Article 063602. https://doi.org/10.1103/physrevlett.104.063602
bibtex: '@article{Avenhaus_Laiho_Chekhova_Silberhorn_2010, title={Accessing Higher
Order Correlations in Quantum Optical States by Time Multiplexing}, volume={104},
DOI={10.1103/physrevlett.104.063602},
number={6063602}, journal={Physical Review Letters}, publisher={American Physical
Society (APS)}, author={Avenhaus, M. and Laiho, K. and Chekhova, M. V. and Silberhorn,
Christine}, year={2010} }'
chicago: Avenhaus, M., K. Laiho, M. V. Chekhova, and Christine Silberhorn. “Accessing
Higher Order Correlations in Quantum Optical States by Time Multiplexing.” Physical
Review Letters 104, no. 6 (2010). https://doi.org/10.1103/physrevlett.104.063602.
ieee: 'M. Avenhaus, K. Laiho, M. V. Chekhova, and C. Silberhorn, “Accessing Higher
Order Correlations in Quantum Optical States by Time Multiplexing,” Physical
Review Letters, vol. 104, no. 6, Art. no. 063602, 2010, doi: 10.1103/physrevlett.104.063602.'
mla: Avenhaus, M., et al. “Accessing Higher Order Correlations in Quantum Optical
States by Time Multiplexing.” Physical Review Letters, vol. 104, no. 6,
063602, American Physical Society (APS), 2010, doi:10.1103/physrevlett.104.063602.
short: M. Avenhaus, K. Laiho, M.V. Chekhova, C. Silberhorn, Physical Review Letters
104 (2010).
date_created: 2023-01-26T08:37:32Z
date_updated: 2023-01-30T12:55:25Z
department:
- _id: '288'
- _id: '15'
doi: 10.1103/physrevlett.104.063602
intvolume: ' 104'
issue: '6'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Physical Review Letters
publication_identifier:
issn:
- 0031-9007
- 1079-7114
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Accessing Higher Order Correlations in Quantum Optical States by Time Multiplexing
type: journal_article
user_id: '26263'
volume: 104
year: '2010'
...
---
_id: '40199'
article_number: '063001'
author:
- first_name: Agata M
full_name: Brańczyk, Agata M
last_name: Brańczyk
- first_name: T C
full_name: Ralph, T C
last_name: Ralph
- first_name: Wolfram
full_name: Helwig, Wolfram
last_name: Helwig
- first_name: Christine
full_name: Silberhorn, Christine
id: '26263'
last_name: Silberhorn
citation:
ama: Brańczyk AM, Ralph TC, Helwig W, Silberhorn C. Optimized generation of heralded
Fock states using parametric down-conversion. New Journal of Physics. 2010;12(6).
doi:10.1088/1367-2630/12/6/063001
apa: Brańczyk, A. M., Ralph, T. C., Helwig, W., & Silberhorn, C. (2010). Optimized
generation of heralded Fock states using parametric down-conversion. New Journal
of Physics, 12(6), Article 063001. https://doi.org/10.1088/1367-2630/12/6/063001
bibtex: '@article{Brańczyk_Ralph_Helwig_Silberhorn_2010, title={Optimized generation
of heralded Fock states using parametric down-conversion}, volume={12}, DOI={10.1088/1367-2630/12/6/063001},
number={6063001}, journal={New Journal of Physics}, publisher={IOP Publishing},
author={Brańczyk, Agata M and Ralph, T C and Helwig, Wolfram and Silberhorn, Christine},
year={2010} }'
chicago: Brańczyk, Agata M, T C Ralph, Wolfram Helwig, and Christine Silberhorn.
“Optimized Generation of Heralded Fock States Using Parametric Down-Conversion.”
New Journal of Physics 12, no. 6 (2010). https://doi.org/10.1088/1367-2630/12/6/063001.
ieee: 'A. M. Brańczyk, T. C. Ralph, W. Helwig, and C. Silberhorn, “Optimized generation
of heralded Fock states using parametric down-conversion,” New Journal of Physics,
vol. 12, no. 6, Art. no. 063001, 2010, doi: 10.1088/1367-2630/12/6/063001.'
mla: Brańczyk, Agata M., et al. “Optimized Generation of Heralded Fock States Using
Parametric Down-Conversion.” New Journal of Physics, vol. 12, no. 6, 063001,
IOP Publishing, 2010, doi:10.1088/1367-2630/12/6/063001.
short: A.M. Brańczyk, T.C. Ralph, W. Helwig, C. Silberhorn, New Journal of Physics
12 (2010).
date_created: 2023-01-26T08:32:08Z
date_updated: 2023-01-30T12:54:24Z
department:
- _id: '288'
- _id: '15'
doi: 10.1088/1367-2630/12/6/063001
intvolume: ' 12'
issue: '6'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: New Journal of Physics
publication_identifier:
issn:
- 1367-2630
publication_status: published
publisher: IOP Publishing
status: public
title: Optimized generation of heralded Fock states using parametric down-conversion
type: journal_article
user_id: '26263'
volume: 12
year: '2010'
...
---
_id: '43260'
author:
- first_name: J.
full_name: Güdde, J.
last_name: Güdde
- first_name: M.
full_name: Rohleder, M.
last_name: Rohleder
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: S.W.
full_name: Koch, S.W.
last_name: Koch
- first_name: U.
full_name: Höfer, U.
last_name: Höfer
citation:
ama: 'Güdde J, Rohleder M, Meier T, Koch SW, Höfer U. Coherently controlled electrical
currents at surfaces. In: Bovensiepen U, Petek H, Wolf M, eds. Dynamics at
Solid State Surfaces and Interfaces. Vol 1. Current Developments. Wiley‐VCH
Verlag; 2010:579-591. doi:10.1002/9783527633418.ch24'
apa: Güdde, J., Rohleder, M., Meier, T., Koch, S. W., & Höfer, U. (2010). Coherently
controlled electrical currents at surfaces. In U. Bovensiepen, H. Petek, &
M. Wolf (Eds.), Dynamics at Solid State Surfaces and Interfaces (Vol. 1,
pp. 579–591). Wiley‐VCH Verlag. https://doi.org/10.1002/9783527633418.ch24
bibtex: '@inbook{Güdde_Rohleder_Meier_Koch_Höfer_2010, place={Weinheim}, series={Current
Developments}, title={Coherently controlled electrical currents at surfaces},
volume={1}, DOI={10.1002/9783527633418.ch24},
booktitle={Dynamics at Solid State Surfaces and Interfaces}, publisher={Wiley‐VCH
Verlag}, author={Güdde, J. and Rohleder, M. and Meier, Torsten and Koch, S.W.
and Höfer, U.}, editor={Bovensiepen, U. and Petek, H. and Wolf, M.}, year={2010},
pages={579–591}, collection={Current Developments} }'
chicago: 'Güdde, J., M. Rohleder, Torsten Meier, S.W. Koch, and U. Höfer. “Coherently
Controlled Electrical Currents at Surfaces.” In Dynamics at Solid State Surfaces
and Interfaces, edited by U. Bovensiepen, H. Petek, and M. Wolf, 1:579–91.
Current Developments. Weinheim: Wiley‐VCH Verlag, 2010. https://doi.org/10.1002/9783527633418.ch24.'
ieee: 'J. Güdde, M. Rohleder, T. Meier, S. W. Koch, and U. Höfer, “Coherently controlled
electrical currents at surfaces,” in Dynamics at Solid State Surfaces and Interfaces,
vol. 1, U. Bovensiepen, H. Petek, and M. Wolf, Eds. Weinheim: Wiley‐VCH Verlag,
2010, pp. 579–591.'
mla: Güdde, J., et al. “Coherently Controlled Electrical Currents at Surfaces.”
Dynamics at Solid State Surfaces and Interfaces, edited by U. Bovensiepen
et al., vol. 1, Wiley‐VCH Verlag, 2010, pp. 579–91, doi:10.1002/9783527633418.ch24.
short: 'J. Güdde, M. Rohleder, T. Meier, S.W. Koch, U. Höfer, in: U. Bovensiepen,
H. Petek, M. Wolf (Eds.), Dynamics at Solid State Surfaces and Interfaces, Wiley‐VCH
Verlag, Weinheim, 2010, pp. 579–591.'
date_created: 2023-04-01T21:30:57Z
date_updated: 2023-04-01T21:31:08Z
department:
- _id: '293'
doi: 10.1002/9783527633418.ch24
editor:
- first_name: U.
full_name: Bovensiepen, U.
last_name: Bovensiepen
- first_name: H.
full_name: Petek, H.
last_name: Petek
- first_name: M.
full_name: Wolf, M.
last_name: Wolf
intvolume: ' 1'
language:
- iso: eng
main_file_link:
- url: https://onlinelibrary.wiley.com/doi/10.1002/9783527633418.ch24
page: 579-591
place: Weinheim
publication: Dynamics at Solid State Surfaces and Interfaces
publication_status: published
publisher: Wiley‐VCH Verlag
series_title: Current Developments
status: public
title: Coherently controlled electrical currents at surfaces
type: book_chapter
user_id: '49063'
volume: 1
year: '2010'
...
---
_id: '4127'
abstract:
- lang: eng
text: "The dynamics of charge and spin injection currents excited by circularly
polarized, one-color laser beams in\r\nsemiconductor quantum wells is analyzed.
Our microscopic approach is based on a 14x14 k · p band-structure\r\ntheory in
combination with multisubband semiconductor Bloch equations which allows a detailed
analysis of\r\nthe photogenerated carrier distributions and coherences in k space.
Charge and spin injection currents are\r\nnumerically calculated for [110]- and
[001]-grown GaAs quantum wells including dc population contributions\r\nand ac
contributions that arise from intersubband coherences. The dependencies of the
injection currents on the\r\nexcitation conditions, in particular, the photon
energy are computed and discussed."
article_number: '115316'
article_type: original
author:
- first_name: Huynh Thanh
full_name: Duc, Huynh Thanh
last_name: Duc
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
citation:
ama: Duc HT, Förstner J, Meier T. Microscopic analysis of charge and spin photocurrents
injected by circularly polarized one-color laser pulses in GaAs quantum wells.
Physical Review B. 2010;82(11). doi:10.1103/physrevb.82.115316
apa: Duc, H. T., Förstner, J., & Meier, T. (2010). Microscopic analysis of charge
and spin photocurrents injected by circularly polarized one-color laser pulses
in GaAs quantum wells. Physical Review B, 82(11), Article 115316.
https://doi.org/10.1103/physrevb.82.115316
bibtex: '@article{Duc_Förstner_Meier_2010, title={Microscopic analysis of charge
and spin photocurrents injected by circularly polarized one-color laser pulses
in GaAs quantum wells}, volume={82}, DOI={10.1103/physrevb.82.115316},
number={11115316}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Duc, Huynh Thanh and Förstner, Jens and Meier, Torsten}, year={2010}
}'
chicago: Duc, Huynh Thanh, Jens Förstner, and Torsten Meier. “Microscopic Analysis
of Charge and Spin Photocurrents Injected by Circularly Polarized One-Color Laser
Pulses in GaAs Quantum Wells.” Physical Review B 82, no. 11 (2010). https://doi.org/10.1103/physrevb.82.115316.
ieee: 'H. T. Duc, J. Förstner, and T. Meier, “Microscopic analysis of charge and
spin photocurrents injected by circularly polarized one-color laser pulses in
GaAs quantum wells,” Physical Review B, vol. 82, no. 11, Art. no. 115316,
2010, doi: 10.1103/physrevb.82.115316.'
mla: Duc, Huynh Thanh, et al. “Microscopic Analysis of Charge and Spin Photocurrents
Injected by Circularly Polarized One-Color Laser Pulses in GaAs Quantum Wells.”
Physical Review B, vol. 82, no. 11, 115316, American Physical Society (APS),
2010, doi:10.1103/physrevb.82.115316.
short: H.T. Duc, J. Förstner, T. Meier, Physical Review B 82 (2010).
date_created: 2018-08-27T10:25:36Z
date_updated: 2023-04-19T11:11:47Z
ddc:
- '530'
department:
- _id: '15'
- _id: '230'
- _id: '293'
- _id: '170'
doi: 10.1103/physrevb.82.115316
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-27T10:27:00Z
date_updated: 2018-08-27T10:27:00Z
file_id: '4128'
file_name: 2010 Duc,Förstner,Meier_Microscopic analysis of charge and spin photocurrents
injected by circularly polarized one-color laser pulses in GaAs quantum wells.pdf
file_size: 639662
relation: main_file
success: 1
file_date_updated: 2018-08-27T10:27:00Z
has_accepted_license: '1'
intvolume: ' 82'
issue: '11'
keyword:
- tet_topic_qw
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Microscopic analysis of charge and spin photocurrents injected by circularly
polarized one-color laser pulses in GaAs quantum wells
type: journal_article
user_id: '49063'
volume: 82
year: '2010'
...
---
_id: '43261'
abstract:
- lang: eng
text: We report the development of an experimental technique to measure the dynamics
of electrical currents on the femtosecond timescale. The technique combines methods
of coherent control with time- and angle-resolved photoelectron spectroscopy.
Direct snapshots of the momentum distribution of the excited electrons as function
of time are then determined by photoelectron spectroscopy. In this way we gain
information on the generation and decay of ultrashort current pulses in unprecedented
detail. In particular, this technique allows the observation of elastic electron
scattering in terms of an incoherent population dynamics in momentum space. We
have applied this optical current generation and detection scheme to electrons
in so-called image-potential states which represent a prototype of two-dimensional
electronic surface states. Electrons in these states are bound perpendicular to
the metal surface by the Coulombic image potential whereas they can move almost
freely parallel to the surface. For the (n=1) image-potential state of Cu(100)
we find a decay time of 10 fs due to electron scattering with steps and surface
defects.
article_number: 76001K
author:
- first_name: J.
full_name: Güdde, J.
last_name: Güdde
- first_name: M.
full_name: Rohleder, M.
last_name: Rohleder
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: S.W.
full_name: Koch, S.W.
last_name: Koch
- first_name: U.
full_name: Höfer, U.
last_name: Höfer
citation:
ama: 'Güdde J, Rohleder M, Meier T, Koch SW, Höfer U. Ultrafast coherent control
of electric currents at metal surfaces. In: Song J-J, Tsen K-T, Betz M, Y. Elezzabi
A, eds. Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV.
Vol 7600. SPIE Proceedings. SPIE; 2010. doi:10.1117/12.839672'
apa: Güdde, J., Rohleder, M., Meier, T., Koch, S. W., & Höfer, U. (2010). Ultrafast
coherent control of electric currents at metal surfaces. In J.-J. Song, K.-T.
Tsen, M. Betz, & A. Y. Elezzabi (Eds.), Ultrafast Phenomena in Semiconductors
and Nanostructure Materials XIV (No. 76001K; Vol. 7600). SPIE. https://doi.org/10.1117/12.839672
bibtex: '@inproceedings{Güdde_Rohleder_Meier_Koch_Höfer_2010, series={SPIE Proceedings},
title={Ultrafast coherent control of electric currents at metal surfaces}, volume={7600},
DOI={10.1117/12.839672}, number={76001K},
booktitle={Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV},
publisher={SPIE}, author={Güdde, J. and Rohleder, M. and Meier, Torsten and Koch,
S.W. and Höfer, U.}, editor={Song, Jin-Joo and Tsen, Kong-Thon and Betz, Markus
and Y. Elezzabi, Abdulhakem}, year={2010}, collection={SPIE Proceedings} }'
chicago: Güdde, J., M. Rohleder, Torsten Meier, S.W. Koch, and U. Höfer. “Ultrafast
Coherent Control of Electric Currents at Metal Surfaces.” In Ultrafast Phenomena
in Semiconductors and Nanostructure Materials XIV, edited by Jin-Joo Song,
Kong-Thon Tsen, Markus Betz, and Abdulhakem Y. Elezzabi, Vol. 7600. SPIE Proceedings.
SPIE, 2010. https://doi.org/10.1117/12.839672.
ieee: 'J. Güdde, M. Rohleder, T. Meier, S. W. Koch, and U. Höfer, “Ultrafast coherent
control of electric currents at metal surfaces,” in Ultrafast Phenomena in
Semiconductors and Nanostructure Materials XIV, 2010, vol. 7600, doi: 10.1117/12.839672.'
mla: Güdde, J., et al. “Ultrafast Coherent Control of Electric Currents at Metal
Surfaces.” Ultrafast Phenomena in Semiconductors and Nanostructure Materials
XIV, edited by Jin-Joo Song et al., vol. 7600, 76001K, SPIE, 2010, doi:10.1117/12.839672.
short: 'J. Güdde, M. Rohleder, T. Meier, S.W. Koch, U. Höfer, in: J.-J. Song, K.-T.
Tsen, M. Betz, A. Y. Elezzabi (Eds.), Ultrafast Phenomena in Semiconductors and
Nanostructure Materials XIV, SPIE, 2010.'
date_created: 2023-04-01T21:37:05Z
date_updated: 2023-04-19T11:10:38Z
department:
- _id: '293'
doi: 10.1117/12.839672
editor:
- first_name: Jin-Joo
full_name: Song, Jin-Joo
last_name: Song
- first_name: Kong-Thon
full_name: Tsen, Kong-Thon
last_name: Tsen
- first_name: Markus
full_name: Betz, Markus
last_name: Betz
- first_name: Abdulhakem
full_name: Y. Elezzabi, Abdulhakem
last_name: Y. Elezzabi
intvolume: ' 7600'
language:
- iso: eng
main_file_link:
- url: https://spie.org/Publications/Proceedings/Paper/10.1117/12.839672
publication: Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV
publication_status: published
publisher: SPIE
series_title: SPIE Proceedings
status: public
title: Ultrafast coherent control of electric currents at metal surfaces
type: conference
user_id: '49063'
volume: 7600
year: '2010'
...
---
_id: '4176'
abstract:
- lang: eng
text: A microscopic theory that describes injection currents in GaAs quantum wells
is presented. 14 × 14 band k.p theory is used to compute the band structure including
anisotropy and spin-orbit interaction. Transient injection currents are obtained
via numerical solutions of the semiconductor Bloch equations. Depending on the
growth direction of the considered quantum well system and the propagation and
polarization directions of the incident light beam, it is possible to generate
charge and/or spin photocurrents on ultrashort time scales. The dependence of
the photocurrents on the excitation conditions is computed and discussed.
author:
- first_name: Huynh Thanh
full_name: Duc, Huynh Thanh
last_name: Duc
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
citation:
ama: 'Duc HT, Förstner J, Meier T. Microscopic theoretical analysis of optically
generated injection currents in semiconductor quantum wells. In: Song J-J, Tsen
K-T, Betz M, Elezzabi AY, eds. Ultrafast Phenomena in Semiconductors and Nanostructure
Materials XIV. Vol 7600. SPIE Proceedings. SPIE; 2010:76000S-76000S - 9. doi:10.1117/12.840388'
apa: Duc, H. T., Förstner, J., & Meier, T. (2010). Microscopic theoretical analysis
of optically generated injection currents in semiconductor quantum wells. In J.-J.
Song, K.-T. Tsen, M. Betz, & A. Y. Elezzabi (Eds.), Ultrafast Phenomena
in Semiconductors and Nanostructure Materials XIV (Vol. 7600, pp. 76000S-76000S
– 9). SPIE. https://doi.org/10.1117/12.840388
bibtex: '@inproceedings{Duc_Förstner_Meier_2010, series={SPIE Proceedings}, title={Microscopic
theoretical analysis of optically generated injection currents in semiconductor
quantum wells}, volume={7600}, DOI={10.1117/12.840388},
booktitle={Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV},
publisher={SPIE}, author={Duc, Huynh Thanh and Förstner, Jens and Meier, Torsten},
editor={Song, Jin-Joo and Tsen, Kong-Thon and Betz, Markus and Elezzabi, Abdulhakem
Y.}, year={2010}, pages={76000S-76000S–9}, collection={SPIE Proceedings} }'
chicago: Duc, Huynh Thanh, Jens Förstner, and Torsten Meier. “Microscopic Theoretical
Analysis of Optically Generated Injection Currents in Semiconductor Quantum Wells.”
In Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV,
edited by Jin-Joo Song, Kong-Thon Tsen, Markus Betz, and Abdulhakem Y. Elezzabi,
7600:76000S-76000S – 9. SPIE Proceedings. SPIE, 2010. https://doi.org/10.1117/12.840388.
ieee: 'H. T. Duc, J. Förstner, and T. Meier, “Microscopic theoretical analysis of
optically generated injection currents in semiconductor quantum wells,” in Ultrafast
Phenomena in Semiconductors and Nanostructure Materials XIV, 2010, vol. 7600,
pp. 76000S-76000S–9, doi: 10.1117/12.840388.'
mla: Duc, Huynh Thanh, et al. “Microscopic Theoretical Analysis of Optically Generated
Injection Currents in Semiconductor Quantum Wells.” Ultrafast Phenomena in
Semiconductors and Nanostructure Materials XIV, edited by Jin-Joo Song et
al., vol. 7600, SPIE, 2010, pp. 76000S-76000S – 9, doi:10.1117/12.840388.
short: 'H.T. Duc, J. Förstner, T. Meier, in: J.-J. Song, K.-T. Tsen, M. Betz, A.Y.
Elezzabi (Eds.), Ultrafast Phenomena in Semiconductors and Nanostructure Materials
XIV, SPIE, 2010, pp. 76000S-76000S–9.'
date_created: 2018-08-28T09:00:53Z
date_updated: 2023-04-19T11:07:47Z
department:
- _id: '15'
- _id: '293'
- _id: '170'
- _id: '230'
doi: 10.1117/12.840388
editor:
- first_name: Jin-Joo
full_name: Song, Jin-Joo
last_name: Song
- first_name: Kong-Thon
full_name: Tsen, Kong-Thon
last_name: Tsen
- first_name: Markus
full_name: Betz, Markus
last_name: Betz
- first_name: Abdulhakem Y.
full_name: Elezzabi, Abdulhakem Y.
last_name: Elezzabi
intvolume: ' 7600'
keyword:
- tet_topic_qw
language:
- iso: eng
page: 76000S-76000S-9
publication: Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV
publication_status: published
publisher: SPIE
series_title: SPIE Proceedings
status: public
title: Microscopic theoretical analysis of optically generated injection currents
in semiconductor quantum wells
type: conference
user_id: '49063'
volume: 7600
year: '2010'
...
---
_id: '44063'
abstract:
- lang: eng
text: We present an analysis of the coupling between photonic crystal cavities in
different geometries. Inline‐, side‐ and angle‐coupled L3‐geometries are investigated
numerically in three dimensions. Asymmetric mode splitting of the fundamental
mode for the L3‐cavity is shown for all geometrical setups evidencing for strong
cavity‐cavity interactions. The coupling efficiency for the fundamental mode is
shown to be best for a 30° angle between the cavity‐centers due to the direction
of in‐plane leackage out of the cavites.
article_number: 46-48
author:
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: S.
full_name: Declair, S.
last_name: Declair
- first_name: J.
full_name: Förstner, J.
last_name: Förstner
citation:
ama: Meier T, Declair S, Förstner J. Numerical Analysis of Coupled Photonic Crystal
Cavities. AIP Conference Proceedings. 2010;1291(46). doi:10.1063/1.3506125
apa: Meier, T., Declair, S., & Förstner, J. (2010). Numerical Analysis of Coupled
Photonic Crystal Cavities. AIP Conference Proceedings, 1291(46),
Article 46–48. https://doi.org/10.1063/1.3506125
bibtex: '@article{Meier_Declair_Förstner_2010, title={Numerical Analysis of Coupled
Photonic Crystal Cavities}, volume={1291}, DOI={10.1063/1.3506125},
number={4646–48}, journal={AIP Conference Proceedings}, publisher={American Institute
of Physics}, author={Meier, Torsten and Declair, S. and Förstner, J.}, year={2010}
}'
chicago: Meier, Torsten, S. Declair, and J. Förstner. “Numerical Analysis of Coupled
Photonic Crystal Cavities.” AIP Conference Proceedings 1291, no. 46 (2010).
https://doi.org/10.1063/1.3506125.
ieee: 'T. Meier, S. Declair, and J. Förstner, “Numerical Analysis of Coupled Photonic
Crystal Cavities,” AIP Conference Proceedings, vol. 1291, no. 46, Art.
no. 46–48, 2010, doi: 10.1063/1.3506125.'
mla: Meier, Torsten, et al. “Numerical Analysis of Coupled Photonic Crystal Cavities.”
AIP Conference Proceedings, vol. 1291, no. 46, 46–48, American Institute
of Physics, 2010, doi:10.1063/1.3506125.
short: T. Meier, S. Declair, J. Förstner, AIP Conference Proceedings 1291 (2010).
date_created: 2023-04-19T10:57:09Z
date_updated: 2023-04-19T10:57:12Z
department:
- _id: '293'
doi: 10.1063/1.3506125
intvolume: ' 1291'
issue: '46 '
language:
- iso: eng
main_file_link:
- url: https://aip.scitation.org/doi/abs/10.1063/1.3506125
publication: AIP Conference Proceedings
publication_status: published
publisher: American Institute of Physics
status: public
title: Numerical Analysis of Coupled Photonic Crystal Cavities
type: journal_article
user_id: '49063'
volume: 1291
year: '2010'
...
---
_id: '24980'
abstract:
- lang: eng
text: We discuss transport and localization properties on the insulating side of
the disorder dominated superconductor-insulator transition, described in terms
of the dirty boson model. Analyzing the spectral properties of the interacting
bosons in the absence of phonons, we argue that the Bose glass phase admits three
distinct regimes. For strongest disorder the boson system is a fully localized,
perfect insulator at any temperature. At smaller disorder, only the low temperature
phase exhibits perfect insulation while delocalization takes place above a finite
temperature. We argue that a third phase must intervene between these perfect
insulators and the superconductor. This conducting Bose glass phase is characterized
by a mobility edge in the many body spectrum, located at finite energy above the
ground state. In this insulating regime purely electronically activated transport
occurs, with a conductivity following an Arrhenius law at asymptotically low temperatures,
while a tendency to superactivation is predicted at higher T. These predictions
are in good agreement with recent transport experiments in highly disordered films
of superconducting materials.
author:
- first_name: N.
full_name: Gögh, N.
last_name: Gögh
- first_name: P.
full_name: Thomas, P.
last_name: Thomas
- first_name: I.
full_name: Kuznetsova, I.
last_name: Kuznetsova
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: I.
full_name: Varga, I.
last_name: Varga
citation:
ama: 'Gögh N, Thomas P, Kuznetsova I, Meier T, Varga I. Localization of excitons
in weakly disordered semiconductor structures: A model study. Annalen der Physik.
2010;18(12):905-909. doi:10.1002/andp.20095211219'
apa: 'Gögh, N., Thomas, P., Kuznetsova, I., Meier, T., & Varga, I. (2010). Localization
of excitons in weakly disordered semiconductor structures: A model study. Annalen
Der Physik, 18(12), 905–909. https://doi.org/10.1002/andp.20095211219'
bibtex: '@article{Gögh_Thomas_Kuznetsova_Meier_Varga_2010, title={Localization of
excitons in weakly disordered semiconductor structures: A model study}, volume={18},
DOI={10.1002/andp.20095211219},
number={12}, journal={Annalen der Physik}, author={Gögh, N. and Thomas, P. and
Kuznetsova, I. and Meier, Torsten and Varga, I.}, year={2010}, pages={905–909}
}'
chicago: 'Gögh, N., P. Thomas, I. Kuznetsova, Torsten Meier, and I. Varga. “Localization
of Excitons in Weakly Disordered Semiconductor Structures: A Model Study.” Annalen
Der Physik 18, no. 12 (2010): 905–9. https://doi.org/10.1002/andp.20095211219.'
ieee: 'N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, and I. Varga, “Localization
of excitons in weakly disordered semiconductor structures: A model study,” Annalen
der Physik, vol. 18, no. 12, pp. 905–909, 2010, doi: 10.1002/andp.20095211219.'
mla: 'Gögh, N., et al. “Localization of Excitons in Weakly Disordered Semiconductor
Structures: A Model Study.” Annalen Der Physik, vol. 18, no. 12, 2010,
pp. 905–09, doi:10.1002/andp.20095211219.'
short: N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, I. Varga, Annalen Der Physik
18 (2010) 905–909.
date_created: 2021-09-24T08:06:30Z
date_updated: 2023-04-19T11:13:00Z
department:
- _id: '15'
- _id: '170'
- _id: '293'
- _id: '230'
doi: 10.1002/andp.20095211219
intvolume: ' 18'
issue: '12'
language:
- iso: eng
page: 905-909
publication: Annalen der Physik
publication_identifier:
issn:
- 0003-3804
- 1521-3889
publication_status: published
status: public
title: 'Localization of excitons in weakly disordered semiconductor structures: A
model study'
type: journal_article
user_id: '49063'
volume: 18
year: '2010'
...
---
_id: '23480'
abstract:
- lang: eng
text: We discuss transport and localization properties on the insulating side of
the disorder dominated superconductor-insulator transition, described in terms
of the dirty boson model. Analyzing the spectral properties of the interacting
bosons in the absence of phonons, we argue that the Bose glass phase admits three
distinct regimes. For strongest disorder the boson system is a fully localized,
perfect insulator at any temperature. At smaller disorder, only the low temperature
phase exhibits perfect insulation while delocalization takes place above a finite
temperature. We argue that a third phase must intervene between these perfect
insulators and the superconductor. This conducting Bose glass phase is characterized
by a mobility edge in the many body spectrum, located at finite energy above the
ground state. In this insulating regime purely electronically activated transport
occurs, with a conductivity following an Arrhenius law at asymptotically low temperatures,
while a tendency to superactivation is predicted at higher T. These predictions
are in good agreement with recent transport experiments in highly disordered films
of superconducting materials.
author:
- first_name: N.
full_name: Gögh, N.
last_name: Gögh
- first_name: P.
full_name: Thomas, P.
last_name: Thomas
- first_name: I.
full_name: Kuznetsova, I.
last_name: Kuznetsova
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: I.
full_name: Varga, I.
last_name: Varga
citation:
ama: 'Gögh N, Thomas P, Kuznetsova I, Meier T, Varga I. Localization of excitons
in weakly disordered semiconductor structures: A model study. Annalen der Physik.
2010;(12):905-909. doi:10.1002/andp.200910382'
apa: 'Gögh, N., Thomas, P., Kuznetsova, I., Meier, T., & Varga, I. (2010). Localization
of excitons in weakly disordered semiconductor structures: A model study. Annalen
Der Physik, 12, 905–909. https://doi.org/10.1002/andp.200910382'
bibtex: '@article{Gögh_Thomas_Kuznetsova_Meier_Varga_2010, title={Localization of
excitons in weakly disordered semiconductor structures: A model study}, DOI={10.1002/andp.200910382}, number={12},
journal={Annalen der Physik}, author={Gögh, N. and Thomas, P. and Kuznetsova,
I. and Meier, Torsten and Varga, I.}, year={2010}, pages={905–909} }'
chicago: 'Gögh, N., P. Thomas, I. Kuznetsova, Torsten Meier, and I. Varga. “Localization
of Excitons in Weakly Disordered Semiconductor Structures: A Model Study.” Annalen
Der Physik, no. 12 (2010): 905–9. https://doi.org/10.1002/andp.200910382.'
ieee: 'N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, and I. Varga, “Localization
of excitons in weakly disordered semiconductor structures: A model study,” Annalen
der Physik, no. 12, pp. 905–909, 2010, doi: 10.1002/andp.200910382.'
mla: 'Gögh, N., et al. “Localization of Excitons in Weakly Disordered Semiconductor
Structures: A Model Study.” Annalen Der Physik, no. 12, 2010, pp. 905–09,
doi:10.1002/andp.200910382.'
short: N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, I. Varga, Annalen Der Physik
(2010) 905–909.
date_created: 2021-08-24T08:58:35Z
date_updated: 2023-04-19T11:12:57Z
department:
- _id: '15'
- _id: '170'
- _id: '293'
- _id: '230'
doi: 10.1002/andp.200910382
issue: '12'
language:
- iso: eng
page: 905-909
publication: Annalen der Physik
publication_identifier:
issn:
- 0003-3804
- 1521-3889
publication_status: published
status: public
title: 'Localization of excitons in weakly disordered semiconductor structures: A
model study'
type: journal_article
user_id: '49063'
year: '2010'
...
---
_id: '18558'
abstract:
- lang: eng
text: We present an implementation of the GW approximation for the electronic self-energy
within the full-potential linearized augmented-plane-wave (FLAPW) method. The
algorithm uses an all-electron mixed product basis for the representation of response
matrices and related quantities. This basis is derived from the FLAPW basis and
is exact for wave-function products. The correlation part of the self-energy is
calculated on the imaginary-frequency axis with a subsequent analytic continuation
to the real axis. As an alternative we can perform the frequency convolution of
the Green function G and the dynamically screened Coulomb interaction W explicitly
by a contour integration. The singularity of the bare and screened interaction
potentials gives rise to a numerically important self-energy contribution, which
we treat analytically to achieve good convergence with respect to the k-point
sampling. As numerical realizations of the GW approximation typically suffer from
the high computational expense required for the evaluation of the nonlocal and
frequency-dependent self-energy, we demonstrate how the algorithm can be made
very efficient by exploiting spatial and time-reversal symmetry as well as by
applying an optimization of the mixed product basis that retains only the numerically
important contributions of the electron-electron interaction. This optimization
step reduces the basis size without compromising the accuracy and accelerates
the code considerably. Furthermore, we demonstrate that one can employ an extrapolar
approximation for high-lying states to reduce the number of empty states that
must be taken into account explicitly in the construction of the polarization
function and the self-energy. We show convergence tests, CPU timings, and results
for prototype semiconductors and insulators as well as ferromagnetic nickel.
article_number: '125102'
article_type: original
author:
- first_name: Christoph
full_name: Friedrich, Christoph
last_name: Friedrich
- first_name: Stefan
full_name: Blügel, Stefan
last_name: Blügel
- first_name: Arno
full_name: Schindlmayr, Arno
id: '458'
last_name: Schindlmayr
orcid: 0000-0002-4855-071X
citation:
ama: Friedrich C, Blügel S, Schindlmayr A. Efficient implementation of the GW approximation
within the all-electron FLAPW method. Physical Review B. 2010;81(12). doi:10.1103/PhysRevB.81.125102
apa: Friedrich, C., Blügel, S., & Schindlmayr, A. (2010). Efficient implementation
of the GW approximation within the all-electron FLAPW method. Physical Review
B, 81(12), Article 125102. https://doi.org/10.1103/PhysRevB.81.125102
bibtex: '@article{Friedrich_Blügel_Schindlmayr_2010, title={Efficient implementation
of the GW approximation within the all-electron FLAPW method}, volume={81}, DOI={10.1103/PhysRevB.81.125102},
number={12125102}, journal={Physical Review B}, publisher={American Physical Society},
author={Friedrich, Christoph and Blügel, Stefan and Schindlmayr, Arno}, year={2010}
}'
chicago: Friedrich, Christoph, Stefan Blügel, and Arno Schindlmayr. “Efficient Implementation
of the GW Approximation within the All-Electron FLAPW Method.” Physical Review
B 81, no. 12 (2010). https://doi.org/10.1103/PhysRevB.81.125102.
ieee: 'C. Friedrich, S. Blügel, and A. Schindlmayr, “Efficient implementation of
the GW approximation within the all-electron FLAPW method,” Physical Review
B, vol. 81, no. 12, Art. no. 125102, 2010, doi: 10.1103/PhysRevB.81.125102.'
mla: Friedrich, Christoph, et al. “Efficient Implementation of the GW Approximation
within the All-Electron FLAPW Method.” Physical Review B, vol. 81, no.
12, 125102, American Physical Society, 2010, doi:10.1103/PhysRevB.81.125102.
short: C. Friedrich, S. Blügel, A. Schindlmayr, Physical Review B 81 (2010).
date_created: 2020-08-28T11:26:20Z
date_updated: 2023-04-20T14:57:10Z
ddc:
- '530'
department:
- _id: '296'
- _id: '35'
- _id: '15'
- _id: '170'
doi: 10.1103/PhysRevB.81.125102
external_id:
arxiv:
- '1003.0316'
isi:
- '000276248900039'
file:
- access_level: open_access
content_type: application/pdf
creator: schindlm
date_created: 2020-08-28T11:29:11Z
date_updated: 2020-08-30T15:06:54Z
description: © 2010 American Physical Society
file_id: '18559'
file_name: PhysRevB.81.125102.pdf
file_size: 330212
relation: main_file
title: Efficient implementation of the GW approximation within the all-electron
FLAPW method
file_date_updated: 2020-08-30T15:06:54Z
has_accepted_license: '1'
intvolume: ' 81'
isi: '1'
issue: '12'
language:
- iso: eng
oa: '1'
publication: Physical Review B
publication_identifier:
eissn:
- 1550-235X
issn:
- 1098-0121
publication_status: published
publisher: American Physical Society
quality_controlled: '1'
related_material:
record:
- id: '22761'
relation: other
status: public
status: public
title: Efficient implementation of the GW approximation within the all-electron FLAPW
method
type: journal_article
user_id: '16199'
volume: 81
year: '2010'
...
---
_id: '44064'
abstract:
- lang: eng
text: We compute photocurrents generated by femtosecond single-color laser pulses
in non-centrosymmetric semiconductor quantum wells by combining a 14 x 14 k.p
band structure theory with multi-band semiconductor Bloch equations. The transient
photocurrents are investigated experimentally by measuring the associated Terahertz
emission. The dependencies of the photocurrent and the Terahertz emission on the
excitation conditions are discussed for (110)-oriented GaAs quantum wells. The
comparison between theory and experiment shows a good agreement.
author:
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: Huynh Thanh
full_name: Duc, Huynh Thanh
last_name: Duc
- first_name: Jens
full_name: Foerstner, Jens
last_name: Foerstner
- first_name: S.
full_name: Priyadarshi, S.
last_name: Priyadarshi
- first_name: Ana Maria
full_name: Racu, Ana Maria
last_name: Racu
- first_name: Klaus
full_name: Pierz, Klaus
last_name: Pierz
- first_name: Uwe
full_name: Siegner, Uwe
last_name: Siegner
- first_name: Mark
full_name: Bieler, Mark
last_name: Bieler
citation:
ama: 'Meier T, Duc HT, Foerstner J, et al. Experimental and theoretical investigations
of photocurrents in non-centrosymmetric semiconductor quantum wells. In: DPG
Spring Meeting 2010 . Vol 45. Verhandlungen der Deutschen Physikalischen Gesellschaft.
; 2010.'
apa: Meier, T., Duc, H. T., Foerstner, J., Priyadarshi, S., Racu, A. M., Pierz,
K., Siegner, U., & Bieler, M. (2010). Experimental and theoretical investigations
of photocurrents in non-centrosymmetric semiconductor quantum wells. DPG Spring
Meeting 2010 , 45(3).
bibtex: '@inproceedings{Meier_Duc_Foerstner_Priyadarshi_Racu_Pierz_Siegner_Bieler_2010,
series={Verhandlungen der Deutschen Physikalischen Gesellschaft}, title={Experimental
and theoretical investigations of photocurrents in non-centrosymmetric semiconductor
quantum wells}, volume={45}, number={3}, booktitle={DPG Spring meeting 2010 },
author={Meier, Torsten and Duc, Huynh Thanh and Foerstner, Jens and Priyadarshi,
S. and Racu, Ana Maria and Pierz, Klaus and Siegner, Uwe and Bieler, Mark}, year={2010},
collection={Verhandlungen der Deutschen Physikalischen Gesellschaft} }'
chicago: Meier, Torsten, Huynh Thanh Duc, Jens Foerstner, S. Priyadarshi, Ana Maria
Racu, Klaus Pierz, Uwe Siegner, and Mark Bieler. “Experimental and Theoretical
Investigations of Photocurrents in Non-Centrosymmetric Semiconductor Quantum Wells.”
In DPG Spring Meeting 2010 , Vol. 45. Verhandlungen Der Deutschen Physikalischen
Gesellschaft, 2010.
ieee: T. Meier et al., “Experimental and theoretical investigations of photocurrents
in non-centrosymmetric semiconductor quantum wells,” in DPG Spring meeting
2010 , Regensburg, Germany, 2010, vol. 45, no. 3.
mla: Meier, Torsten, et al. “Experimental and Theoretical Investigations of Photocurrents
in Non-Centrosymmetric Semiconductor Quantum Wells.” DPG Spring Meeting 2010
, vol. 45, no. 3, 2010.
short: 'T. Meier, H.T. Duc, J. Foerstner, S. Priyadarshi, A.M. Racu, K. Pierz, U.
Siegner, M. Bieler, in: DPG Spring Meeting 2010 , 2010.'
conference:
end_date: 2010-03-26
location: Regensburg, Germany
name: 'DPG Spring meeting 2010 '
start_date: 2010-03-21
date_created: 2023-04-19T11:01:12Z
date_updated: 2023-05-01T12:48:34Z
department:
- _id: '293'
intvolume: ' 45'
issue: '3'
language:
- iso: eng
main_file_link:
- url: https://www.dpg-verhandlungen.de/year/2010/conference/regensburg/part/hl/session/5/contribution/6
publication: 'DPG Spring meeting 2010 '
publication_identifier:
issn:
- 0420-0195
publication_status: published
series_title: Verhandlungen der Deutschen Physikalischen Gesellschaft
status: public
title: Experimental and theoretical investigations of photocurrents in non-centrosymmetric
semiconductor quantum wells
type: conference
user_id: '49063'
volume: 45
year: '2010'
...