---
_id: '7498'
author:
- first_name: Wen
full_name: Lei, Wen
last_name: Lei
- first_name: Christian
full_name: Notthoff, Christian
last_name: Notthoff
- first_name: Matthias
full_name: Offer, Matthias
last_name: Offer
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
- first_name: Chennupati
full_name: Jagadish, Chennupati
last_name: Jagadish
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
citation:
ama: Lei W, Notthoff C, Offer M, et al. Electron energy structure of self-assembled
In(Ga)As nanostructures probed by capacitance-voltage spectroscopy and one-dimensional
numerical simulation. Journal of Materials Research. 2009;24(07):2179-2184.
doi:10.1557/jmr.2009.0293
apa: Lei, W., Notthoff, C., Offer, M., Meier, C., Lorke, A., Jagadish, C., &
Wieck, A. D. (2009). Electron energy structure of self-assembled In(Ga)As nanostructures
probed by capacitance-voltage spectroscopy and one-dimensional numerical simulation.
Journal of Materials Research, 24(07), 2179–2184. https://doi.org/10.1557/jmr.2009.0293
bibtex: '@article{Lei_Notthoff_Offer_Meier_Lorke_Jagadish_Wieck_2009, title={Electron
energy structure of self-assembled In(Ga)As nanostructures probed by capacitance-voltage
spectroscopy and one-dimensional numerical simulation}, volume={24}, DOI={10.1557/jmr.2009.0293},
number={07}, journal={Journal of Materials Research}, publisher={Cambridge University
Press (CUP)}, author={Lei, Wen and Notthoff, Christian and Offer, Matthias and
Meier, Cedrik and Lorke, Axel and Jagadish, Chennupati and Wieck, Andreas D.},
year={2009}, pages={2179–2184} }'
chicago: 'Lei, Wen, Christian Notthoff, Matthias Offer, Cedrik Meier, Axel Lorke,
Chennupati Jagadish, and Andreas D. Wieck. “Electron Energy Structure of Self-Assembled
In(Ga)As Nanostructures Probed by Capacitance-Voltage Spectroscopy and One-Dimensional
Numerical Simulation.” Journal of Materials Research 24, no. 07 (2009):
2179–84. https://doi.org/10.1557/jmr.2009.0293.'
ieee: W. Lei et al., “Electron energy structure of self-assembled In(Ga)As
nanostructures probed by capacitance-voltage spectroscopy and one-dimensional
numerical simulation,” Journal of Materials Research, vol. 24, no. 07,
pp. 2179–2184, 2009.
mla: Lei, Wen, et al. “Electron Energy Structure of Self-Assembled In(Ga)As Nanostructures
Probed by Capacitance-Voltage Spectroscopy and One-Dimensional Numerical Simulation.”
Journal of Materials Research, vol. 24, no. 07, Cambridge University Press
(CUP), 2009, pp. 2179–84, doi:10.1557/jmr.2009.0293.
short: W. Lei, C. Notthoff, M. Offer, C. Meier, A. Lorke, C. Jagadish, A.D. Wieck,
Journal of Materials Research 24 (2009) 2179–2184.
date_created: 2019-02-04T14:46:14Z
date_updated: 2022-01-06T07:03:39Z
department:
- _id: '15'
- _id: '230'
- _id: '287'
- _id: '35'
doi: 10.1557/jmr.2009.0293
intvolume: ' 24'
issue: '07'
language:
- iso: eng
page: 2179-2184
publication: Journal of Materials Research
publication_identifier:
issn:
- 0884-2914
- 2044-5326
publication_status: published
publisher: Cambridge University Press (CUP)
status: public
title: Electron energy structure of self-assembled In(Ga)As nanostructures probed
by capacitance-voltage spectroscopy and one-dimensional numerical simulation
type: journal_article
user_id: '20798'
volume: 24
year: '2009'
...
---
_id: '7499'
author:
- first_name: K.
full_name: Huba, K.
last_name: Huba
- first_name: D.
full_name: Krix, D.
last_name: Krix
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: H.
full_name: Nienhaus, H.
last_name: Nienhaus
citation:
ama: 'Huba K, Krix D, Meier C, Nienhaus H. Ultrathin K∕p-Si(001) Schottky diodes
as detectors of chemically generated hot charge carriers. Journal of Vacuum
Science & Technology A: Vacuum, Surfaces, and Films. 2009;27(4):889-894.
doi:10.1116/1.3100218'
apa: 'Huba, K., Krix, D., Meier, C., & Nienhaus, H. (2009). Ultrathin K∕p-Si(001)
Schottky diodes as detectors of chemically generated hot charge carriers. Journal
of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 27(4),
889–894. https://doi.org/10.1116/1.3100218'
bibtex: '@article{Huba_Krix_Meier_Nienhaus_2009, title={Ultrathin K∕p-Si(001) Schottky
diodes as detectors of chemically generated hot charge carriers}, volume={27},
DOI={10.1116/1.3100218}, number={4},
journal={Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films},
publisher={American Vacuum Society}, author={Huba, K. and Krix, D. and Meier,
Cedrik and Nienhaus, H.}, year={2009}, pages={889–894} }'
chicago: 'Huba, K., D. Krix, Cedrik Meier, and H. Nienhaus. “Ultrathin K∕p-Si(001)
Schottky Diodes as Detectors of Chemically Generated Hot Charge Carriers.” Journal
of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 27, no.
4 (2009): 889–94. https://doi.org/10.1116/1.3100218.'
ieee: 'K. Huba, D. Krix, C. Meier, and H. Nienhaus, “Ultrathin K∕p-Si(001) Schottky
diodes as detectors of chemically generated hot charge carriers,” Journal of
Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 27, no.
4, pp. 889–894, 2009.'
mla: 'Huba, K., et al. “Ultrathin K∕p-Si(001) Schottky Diodes as Detectors of Chemically
Generated Hot Charge Carriers.” Journal of Vacuum Science & Technology
A: Vacuum, Surfaces, and Films, vol. 27, no. 4, American Vacuum Society, 2009,
pp. 889–94, doi:10.1116/1.3100218.'
short: 'K. Huba, D. Krix, C. Meier, H. Nienhaus, Journal of Vacuum Science &
Technology A: Vacuum, Surfaces, and Films 27 (2009) 889–894.'
date_created: 2019-02-04T14:47:36Z
date_updated: 2022-01-06T07:03:39Z
department:
- _id: '15'
- _id: '230'
- _id: '287'
- _id: '35'
doi: 10.1116/1.3100218
intvolume: ' 27'
issue: '4'
language:
- iso: eng
page: 889-894
publication: 'Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films'
publication_identifier:
issn:
- 0734-2101
- 1520-8559
publication_status: published
publisher: American Vacuum Society
status: public
title: Ultrathin K∕p-Si(001) Schottky diodes as detectors of chemically generated
hot charge carriers
type: journal_article
user_id: '20798'
volume: 27
year: '2009'
...
---
_id: '8578'
author:
- first_name: M. A.
full_name: Wilde, M. A.
last_name: Wilde
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Ch.
full_name: Heyn, Ch.
last_name: Heyn
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: D.
full_name: Grundler, D.
last_name: Grundler
citation:
ama: Wilde MA, Reuter D, Heyn C, Wieck AD, Grundler D. Inversion-asymmetry-induced
spin splitting observed in the quantum oscillatory magnetization of a two-dimensional
electron system. Physical Review B. 2009. doi:10.1103/physrevb.79.125330
apa: Wilde, M. A., Reuter, D., Heyn, C., Wieck, A. D., & Grundler, D. (2009).
Inversion-asymmetry-induced spin splitting observed in the quantum oscillatory
magnetization of a two-dimensional electron system. Physical Review B.
https://doi.org/10.1103/physrevb.79.125330
bibtex: '@article{Wilde_Reuter_Heyn_Wieck_Grundler_2009, title={Inversion-asymmetry-induced
spin splitting observed in the quantum oscillatory magnetization of a two-dimensional
electron system}, DOI={10.1103/physrevb.79.125330},
journal={Physical Review B}, author={Wilde, M. A. and Reuter, Dirk and Heyn, Ch.
and Wieck, A. D. and Grundler, D.}, year={2009} }'
chicago: Wilde, M. A., Dirk Reuter, Ch. Heyn, A. D. Wieck, and D. Grundler. “Inversion-Asymmetry-Induced
Spin Splitting Observed in the Quantum Oscillatory Magnetization of a Two-Dimensional
Electron System.” Physical Review B, 2009. https://doi.org/10.1103/physrevb.79.125330.
ieee: M. A. Wilde, D. Reuter, C. Heyn, A. D. Wieck, and D. Grundler, “Inversion-asymmetry-induced
spin splitting observed in the quantum oscillatory magnetization of a two-dimensional
electron system,” Physical Review B, 2009.
mla: Wilde, M. A., et al. “Inversion-Asymmetry-Induced Spin Splitting Observed in
the Quantum Oscillatory Magnetization of a Two-Dimensional Electron System.” Physical
Review B, 2009, doi:10.1103/physrevb.79.125330.
short: M.A. Wilde, D. Reuter, C. Heyn, A.D. Wieck, D. Grundler, Physical Review
B (2009).
date_created: 2019-03-26T07:58:30Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevb.79.125330
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
status: public
title: Inversion-asymmetry-induced spin splitting observed in the quantum oscillatory
magnetization of a two-dimensional electron system
type: journal_article
user_id: '42514'
year: '2009'
...
---
_id: '8579'
article_number: '022107'
author:
- first_name: S. S.
full_name: Buchholz, S. S.
last_name: Buchholz
- first_name: S. F.
full_name: Fischer, S. F.
last_name: Fischer
- first_name: U.
full_name: Kunze, U.
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Buchholz SS, Fischer SF, Kunze U, Reuter D, Wieck AD. Nonlocal Aharonov–Bohm
conductance oscillations in an asymmetric quantum ring. Applied Physics Letters.
2009. doi:10.1063/1.3069281
apa: Buchholz, S. S., Fischer, S. F., Kunze, U., Reuter, D., & Wieck, A. D.
(2009). Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum
ring. Applied Physics Letters. https://doi.org/10.1063/1.3069281
bibtex: '@article{Buchholz_Fischer_Kunze_Reuter_Wieck_2009, title={Nonlocal Aharonov–Bohm
conductance oscillations in an asymmetric quantum ring}, DOI={10.1063/1.3069281},
number={022107}, journal={Applied Physics Letters}, author={Buchholz, S. S. and
Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2009} }'
chicago: Buchholz, S. S., S. F. Fischer, U. Kunze, Dirk Reuter, and A. D. Wieck.
“Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.”
Applied Physics Letters, 2009. https://doi.org/10.1063/1.3069281.
ieee: S. S. Buchholz, S. F. Fischer, U. Kunze, D. Reuter, and A. D. Wieck, “Nonlocal
Aharonov–Bohm conductance oscillations in an asymmetric quantum ring,” Applied
Physics Letters, 2009.
mla: Buchholz, S. S., et al. “Nonlocal Aharonov–Bohm Conductance Oscillations in
an Asymmetric Quantum Ring.” Applied Physics Letters, 022107, 2009, doi:10.1063/1.3069281.
short: S.S. Buchholz, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics
Letters (2009).
date_created: 2019-03-26T08:34:37Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3069281
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring
type: journal_article
user_id: '42514'
year: '2009'
...
---
_id: '8580'
article_number: '023107'
author:
- first_name: J. H.
full_name: Blokland, J. H.
last_name: Blokland
- first_name: M.
full_name: Bozkurt, M.
last_name: Bozkurt
- first_name: J. M.
full_name: Ulloa, J. M.
last_name: Ulloa
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: P. M.
full_name: Koenraad, P. M.
last_name: Koenraad
- first_name: P. C. M.
full_name: Christianen, P. C. M.
last_name: Christianen
- first_name: J. C.
full_name: Maan, J. C.
last_name: Maan
citation:
ama: Blokland JH, Bozkurt M, Ulloa JM, et al. Ellipsoidal InAs quantum dots observed
by cross-sectional scanning tunneling microscopy. Applied Physics Letters.
2009. doi:10.1063/1.3072366
apa: Blokland, J. H., Bozkurt, M., Ulloa, J. M., Reuter, D., Wieck, A. D., Koenraad,
P. M., … Maan, J. C. (2009). Ellipsoidal InAs quantum dots observed by cross-sectional
scanning tunneling microscopy. Applied Physics Letters. https://doi.org/10.1063/1.3072366
bibtex: '@article{Blokland_Bozkurt_Ulloa_Reuter_Wieck_Koenraad_Christianen_Maan_2009,
title={Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling
microscopy}, DOI={10.1063/1.3072366},
number={023107}, journal={Applied Physics Letters}, author={Blokland, J. H. and
Bozkurt, M. and Ulloa, J. M. and Reuter, Dirk and Wieck, A. D. and Koenraad, P.
M. and Christianen, P. C. M. and Maan, J. C.}, year={2009} }'
chicago: Blokland, J. H., M. Bozkurt, J. M. Ulloa, Dirk Reuter, A. D. Wieck, P.
M. Koenraad, P. C. M. Christianen, and J. C. Maan. “Ellipsoidal InAs Quantum Dots
Observed by Cross-Sectional Scanning Tunneling Microscopy.” Applied Physics
Letters, 2009. https://doi.org/10.1063/1.3072366.
ieee: J. H. Blokland et al., “Ellipsoidal InAs quantum dots observed by cross-sectional
scanning tunneling microscopy,” Applied Physics Letters, 2009.
mla: Blokland, J. H., et al. “Ellipsoidal InAs Quantum Dots Observed by Cross-Sectional
Scanning Tunneling Microscopy.” Applied Physics Letters, 023107, 2009,
doi:10.1063/1.3072366.
short: J.H. Blokland, M. Bozkurt, J.M. Ulloa, D. Reuter, A.D. Wieck, P.M. Koenraad,
P.C.M. Christianen, J.C. Maan, Applied Physics Letters (2009).
date_created: 2019-03-26T08:42:07Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3072366
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling
microscopy
type: journal_article
user_id: '42514'
year: '2009'
...
---
_id: '8581'
author:
- first_name: A.
full_name: Greilich, A.
last_name: Greilich
- first_name: S.
full_name: Spatzek, S.
last_name: Spatzek
- first_name: I. A.
full_name: Yugova, I. A.
last_name: Yugova
- first_name: I. A.
full_name: Akimov, I. A.
last_name: Akimov
- first_name: D. R.
full_name: Yakovlev, D. R.
last_name: Yakovlev
- first_name: Al. L.
full_name: Efros, Al. L.
last_name: Efros
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: M.
full_name: Bayer, M.
last_name: Bayer
citation:
ama: Greilich A, Spatzek S, Yugova IA, et al. Collective single-mode precession
of electron spins in an ensemble of singly charged (In,Ga)As/GaAs quantum dots.
Physical Review B. 2009. doi:10.1103/physrevb.79.201305
apa: Greilich, A., Spatzek, S., Yugova, I. A., Akimov, I. A., Yakovlev, D. R., Efros,
A. L., … Bayer, M. (2009). Collective single-mode precession of electron spins
in an ensemble of singly charged (In,Ga)As/GaAs quantum dots. Physical Review
B. https://doi.org/10.1103/physrevb.79.201305
bibtex: '@article{Greilich_Spatzek_Yugova_Akimov_Yakovlev_Efros_Reuter_Wieck_Bayer_2009,
title={Collective single-mode precession of electron spins in an ensemble of singly
charged (In,Ga)As/GaAs quantum dots}, DOI={10.1103/physrevb.79.201305},
journal={Physical Review B}, author={Greilich, A. and Spatzek, S. and Yugova,
I. A. and Akimov, I. A. and Yakovlev, D. R. and Efros, Al. L. and Reuter, Dirk
and Wieck, A. D. and Bayer, M.}, year={2009} }'
chicago: Greilich, A., S. Spatzek, I. A. Yugova, I. A. Akimov, D. R. Yakovlev, Al.
L. Efros, Dirk Reuter, A. D. Wieck, and M. Bayer. “Collective Single-Mode Precession
of Electron Spins in an Ensemble of Singly Charged (In,Ga)As/GaAs Quantum Dots.”
Physical Review B, 2009. https://doi.org/10.1103/physrevb.79.201305.
ieee: A. Greilich et al., “Collective single-mode precession of electron
spins in an ensemble of singly charged (In,Ga)As/GaAs quantum dots,” Physical
Review B, 2009.
mla: Greilich, A., et al. “Collective Single-Mode Precession of Electron Spins in
an Ensemble of Singly Charged (In,Ga)As/GaAs Quantum Dots.” Physical Review
B, 2009, doi:10.1103/physrevb.79.201305.
short: A. Greilich, S. Spatzek, I.A. Yugova, I.A. Akimov, D.R. Yakovlev, A.L. Efros,
D. Reuter, A.D. Wieck, M. Bayer, Physical Review B (2009).
date_created: 2019-03-26T08:43:41Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevb.79.201305
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
status: public
title: Collective single-mode precession of electron spins in an ensemble of singly
charged (In,Ga)As/GaAs quantum dots
type: journal_article
user_id: '42514'
year: '2009'
...
---
_id: '8582'
author:
- first_name: A.
full_name: Greilich, A.
last_name: Greilich
- first_name: Sophia E.
full_name: Economou, Sophia E.
last_name: Economou
- first_name: S.
full_name: Spatzek, S.
last_name: Spatzek
- first_name: D. R.
full_name: Yakovlev, D. R.
last_name: Yakovlev
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: T. L.
full_name: Reinecke, T. L.
last_name: Reinecke
- first_name: M.
full_name: Bayer, M.
last_name: Bayer
citation:
ama: Greilich A, Economou SE, Spatzek S, et al. Ultrafast optical rotations of electron
spins in quantum dots. Nature Physics. 2009:262-266. doi:10.1038/nphys1226
apa: Greilich, A., Economou, S. E., Spatzek, S., Yakovlev, D. R., Reuter, D., Wieck,
A. D., … Bayer, M. (2009). Ultrafast optical rotations of electron spins in quantum
dots. Nature Physics, 262–266. https://doi.org/10.1038/nphys1226
bibtex: '@article{Greilich_Economou_Spatzek_Yakovlev_Reuter_Wieck_Reinecke_Bayer_2009,
title={Ultrafast optical rotations of electron spins in quantum dots}, DOI={10.1038/nphys1226}, journal={Nature
Physics}, author={Greilich, A. and Economou, Sophia E. and Spatzek, S. and Yakovlev,
D. R. and Reuter, Dirk and Wieck, A. D. and Reinecke, T. L. and Bayer, M.}, year={2009},
pages={262–266} }'
chicago: Greilich, A., Sophia E. Economou, S. Spatzek, D. R. Yakovlev, Dirk Reuter,
A. D. Wieck, T. L. Reinecke, and M. Bayer. “Ultrafast Optical Rotations of Electron
Spins in Quantum Dots.” Nature Physics, 2009, 262–66. https://doi.org/10.1038/nphys1226.
ieee: A. Greilich et al., “Ultrafast optical rotations of electron spins
in quantum dots,” Nature Physics, pp. 262–266, 2009.
mla: Greilich, A., et al. “Ultrafast Optical Rotations of Electron Spins in Quantum
Dots.” Nature Physics, 2009, pp. 262–66, doi:10.1038/nphys1226.
short: A. Greilich, S.E. Economou, S. Spatzek, D.R. Yakovlev, D. Reuter, A.D. Wieck,
T.L. Reinecke, M. Bayer, Nature Physics (2009) 262–266.
date_created: 2019-03-26T08:51:07Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1038/nphys1226
language:
- iso: eng
page: 262-266
publication: Nature Physics
publication_identifier:
issn:
- 1745-2473
- 1745-2481
publication_status: published
status: public
title: Ultrafast optical rotations of electron spins in quantum dots
type: journal_article
user_id: '42514'
year: '2009'
...
---
_id: '8583'
author:
- first_name: I. A.
full_name: Yugova, I. A.
last_name: Yugova
- first_name: A. A.
full_name: Sokolova, A. A.
last_name: Sokolova
- first_name: D. R.
full_name: Yakovlev, D. R.
last_name: Yakovlev
- first_name: A.
full_name: Greilich, A.
last_name: Greilich
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: M.
full_name: Bayer, M.
last_name: Bayer
citation:
ama: Yugova IA, Sokolova AA, Yakovlev DR, et al. Long-Term Hole Spin Memory in the
Resonantly Amplified Spin Coherence ofInGaAs/GaAsQuantum Well Electrons. Physical
Review Letters. 2009. doi:10.1103/physrevlett.102.167402
apa: Yugova, I. A., Sokolova, A. A., Yakovlev, D. R., Greilich, A., Reuter, D.,
Wieck, A. D., & Bayer, M. (2009). Long-Term Hole Spin Memory in the Resonantly
Amplified Spin Coherence ofInGaAs/GaAsQuantum Well Electrons. Physical Review
Letters. https://doi.org/10.1103/physrevlett.102.167402
bibtex: '@article{Yugova_Sokolova_Yakovlev_Greilich_Reuter_Wieck_Bayer_2009, title={Long-Term
Hole Spin Memory in the Resonantly Amplified Spin Coherence ofInGaAs/GaAsQuantum
Well Electrons}, DOI={10.1103/physrevlett.102.167402},
journal={Physical Review Letters}, author={Yugova, I. A. and Sokolova, A. A. and
Yakovlev, D. R. and Greilich, A. and Reuter, Dirk and Wieck, A. D. and Bayer,
M.}, year={2009} }'
chicago: Yugova, I. A., A. A. Sokolova, D. R. Yakovlev, A. Greilich, Dirk Reuter,
A. D. Wieck, and M. Bayer. “Long-Term Hole Spin Memory in the Resonantly Amplified
Spin Coherence OfInGaAs/GaAsQuantum Well Electrons.” Physical Review Letters,
2009. https://doi.org/10.1103/physrevlett.102.167402.
ieee: I. A. Yugova et al., “Long-Term Hole Spin Memory in the Resonantly
Amplified Spin Coherence ofInGaAs/GaAsQuantum Well Electrons,” Physical Review
Letters, 2009.
mla: Yugova, I. A., et al. “Long-Term Hole Spin Memory in the Resonantly Amplified
Spin Coherence OfInGaAs/GaAsQuantum Well Electrons.” Physical Review Letters,
2009, doi:10.1103/physrevlett.102.167402.
short: I.A. Yugova, A.A. Sokolova, D.R. Yakovlev, A. Greilich, D. Reuter, A.D. Wieck,
M. Bayer, Physical Review Letters (2009).
date_created: 2019-03-26T08:52:30Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevlett.102.167402
language:
- iso: eng
publication: Physical Review Letters
publication_identifier:
issn:
- 0031-9007
- 1079-7114
publication_status: published
status: public
title: Long-Term Hole Spin Memory in the Resonantly Amplified Spin Coherence ofInGaAs/GaAsQuantum
Well Electrons
type: journal_article
user_id: '42514'
year: '2009'
...
---
_id: '8584'
author:
- first_name: M. A.
full_name: Wilde, M. A.
last_name: Wilde
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Ch.
full_name: Heyn, Ch.
last_name: Heyn
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: D.
full_name: Grundler, D.
last_name: Grundler
citation:
ama: Wilde MA, Reuter D, Heyn C, Wieck AD, Grundler D. Inversion-asymmetry-induced
spin splitting observed in the quantum oscillatory magnetization of a two-dimensional
electron system. Physical Review B. 2009. doi:10.1103/physrevb.79.125330
apa: Wilde, M. A., Reuter, D., Heyn, C., Wieck, A. D., & Grundler, D. (2009).
Inversion-asymmetry-induced spin splitting observed in the quantum oscillatory
magnetization of a two-dimensional electron system. Physical Review B.
https://doi.org/10.1103/physrevb.79.125330
bibtex: '@article{Wilde_Reuter_Heyn_Wieck_Grundler_2009, title={Inversion-asymmetry-induced
spin splitting observed in the quantum oscillatory magnetization of a two-dimensional
electron system}, DOI={10.1103/physrevb.79.125330},
journal={Physical Review B}, author={Wilde, M. A. and Reuter, Dirk and Heyn, Ch.
and Wieck, A. D. and Grundler, D.}, year={2009} }'
chicago: Wilde, M. A., Dirk Reuter, Ch. Heyn, A. D. Wieck, and D. Grundler. “Inversion-Asymmetry-Induced
Spin Splitting Observed in the Quantum Oscillatory Magnetization of a Two-Dimensional
Electron System.” Physical Review B, 2009. https://doi.org/10.1103/physrevb.79.125330.
ieee: M. A. Wilde, D. Reuter, C. Heyn, A. D. Wieck, and D. Grundler, “Inversion-asymmetry-induced
spin splitting observed in the quantum oscillatory magnetization of a two-dimensional
electron system,” Physical Review B, 2009.
mla: Wilde, M. A., et al. “Inversion-Asymmetry-Induced Spin Splitting Observed in
the Quantum Oscillatory Magnetization of a Two-Dimensional Electron System.” Physical
Review B, 2009, doi:10.1103/physrevb.79.125330.
short: M.A. Wilde, D. Reuter, C. Heyn, A.D. Wieck, D. Grundler, Physical Review
B (2009).
date_created: 2019-03-26T08:53:21Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevb.79.125330
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
status: public
title: Inversion-asymmetry-induced spin splitting observed in the quantum oscillatory
magnetization of a two-dimensional electron system
type: journal_article
user_id: '42514'
year: '2009'
...
---
_id: '8585'
article_number: '022113'
author:
- first_name: B.
full_name: Marquardt, B.
last_name: Marquardt
- first_name: M.
full_name: Geller, M.
last_name: Geller
- first_name: A.
full_name: Lorke, A.
last_name: Lorke
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Marquardt B, Geller M, Lorke A, Reuter D, Wieck AD. Using a two-dimensional
electron gas to study nonequilibrium tunneling dynamics and charge storage in
self-assembled quantum dots. Applied Physics Letters. 2009. doi:10.1063/1.3175724
apa: Marquardt, B., Geller, M., Lorke, A., Reuter, D., & Wieck, A. D. (2009).
Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics
and charge storage in self-assembled quantum dots. Applied Physics Letters.
https://doi.org/10.1063/1.3175724
bibtex: '@article{Marquardt_Geller_Lorke_Reuter_Wieck_2009, title={Using a two-dimensional
electron gas to study nonequilibrium tunneling dynamics and charge storage in
self-assembled quantum dots}, DOI={10.1063/1.3175724},
number={022113}, journal={Applied Physics Letters}, author={Marquardt, B. and
Geller, M. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}, year={2009} }'
chicago: Marquardt, B., M. Geller, A. Lorke, Dirk Reuter, and A. D. Wieck. “Using
a Two-Dimensional Electron Gas to Study Nonequilibrium Tunneling Dynamics and
Charge Storage in Self-Assembled Quantum Dots.” Applied Physics Letters,
2009. https://doi.org/10.1063/1.3175724.
ieee: B. Marquardt, M. Geller, A. Lorke, D. Reuter, and A. D. Wieck, “Using a two-dimensional
electron gas to study nonequilibrium tunneling dynamics and charge storage in
self-assembled quantum dots,” Applied Physics Letters, 2009.
mla: Marquardt, B., et al. “Using a Two-Dimensional Electron Gas to Study Nonequilibrium
Tunneling Dynamics and Charge Storage in Self-Assembled Quantum Dots.” Applied
Physics Letters, 022113, 2009, doi:10.1063/1.3175724.
short: B. Marquardt, M. Geller, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics
Letters (2009).
date_created: 2019-03-26T08:55:40Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3175724
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics
and charge storage in self-assembled quantum dots
type: journal_article
user_id: '42514'
year: '2009'
...
---
_id: '8586'
author:
- first_name: S.
full_name: Völk, S.
last_name: Völk
- first_name: A.
full_name: Wixforth, A.
last_name: Wixforth
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: J.
full_name: Ebbecke, J.
last_name: Ebbecke
citation:
ama: Völk S, Wixforth A, Reuter D, Wieck AD, Ebbecke J. Conversion of bound excitons
to free excitons by surface acoustic waves. Physical Review B. 2009. doi:10.1103/physrevb.80.165307
apa: Völk, S., Wixforth, A., Reuter, D., Wieck, A. D., & Ebbecke, J. (2009).
Conversion of bound excitons to free excitons by surface acoustic waves. Physical
Review B. https://doi.org/10.1103/physrevb.80.165307
bibtex: '@article{Völk_Wixforth_Reuter_Wieck_Ebbecke_2009, title={Conversion of
bound excitons to free excitons by surface acoustic waves}, DOI={10.1103/physrevb.80.165307},
journal={Physical Review B}, author={Völk, S. and Wixforth, A. and Reuter, Dirk
and Wieck, A. D. and Ebbecke, J.}, year={2009} }'
chicago: Völk, S., A. Wixforth, Dirk Reuter, A. D. Wieck, and J. Ebbecke. “Conversion
of Bound Excitons to Free Excitons by Surface Acoustic Waves.” Physical Review
B, 2009. https://doi.org/10.1103/physrevb.80.165307.
ieee: S. Völk, A. Wixforth, D. Reuter, A. D. Wieck, and J. Ebbecke, “Conversion
of bound excitons to free excitons by surface acoustic waves,” Physical Review
B, 2009.
mla: Völk, S., et al. “Conversion of Bound Excitons to Free Excitons by Surface
Acoustic Waves.” Physical Review B, 2009, doi:10.1103/physrevb.80.165307.
short: S. Völk, A. Wixforth, D. Reuter, A.D. Wieck, J. Ebbecke, Physical Review
B (2009).
date_created: 2019-03-26T08:56:38Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevb.80.165307
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
status: public
title: Conversion of bound excitons to free excitons by surface acoustic waves
type: journal_article
user_id: '42514'
year: '2009'
...
---
_id: '8587'
author:
- first_name: T.
full_name: Auer, T.
last_name: Auer
- first_name: R.
full_name: Oulton, R.
last_name: Oulton
- first_name: A.
full_name: Bauschulte, A.
last_name: Bauschulte
- first_name: D. R.
full_name: Yakovlev, D. R.
last_name: Yakovlev
- first_name: M.
full_name: Bayer, M.
last_name: Bayer
- first_name: S. Yu.
full_name: Verbin, S. Yu.
last_name: Verbin
- first_name: R. V.
full_name: Cherbunin, R. V.
last_name: Cherbunin
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Auer T, Oulton R, Bauschulte A, et al. Measurement of the Knight field and
local nuclear dipole-dipole field in an InGaAs/GaAs quantum dot ensemble. Physical
Review B. 2009. doi:10.1103/physrevb.80.205303
apa: Auer, T., Oulton, R., Bauschulte, A., Yakovlev, D. R., Bayer, M., Verbin, S.
Y., … Wieck, A. D. (2009). Measurement of the Knight field and local nuclear dipole-dipole
field in an InGaAs/GaAs quantum dot ensemble. Physical Review B. https://doi.org/10.1103/physrevb.80.205303
bibtex: '@article{Auer_Oulton_Bauschulte_Yakovlev_Bayer_Verbin_Cherbunin_Reuter_Wieck_2009,
title={Measurement of the Knight field and local nuclear dipole-dipole field in
an InGaAs/GaAs quantum dot ensemble}, DOI={10.1103/physrevb.80.205303},
journal={Physical Review B}, author={Auer, T. and Oulton, R. and Bauschulte, A.
and Yakovlev, D. R. and Bayer, M. and Verbin, S. Yu. and Cherbunin, R. V. and
Reuter, Dirk and Wieck, A. D.}, year={2009} }'
chicago: Auer, T., R. Oulton, A. Bauschulte, D. R. Yakovlev, M. Bayer, S. Yu. Verbin,
R. V. Cherbunin, Dirk Reuter, and A. D. Wieck. “Measurement of the Knight Field
and Local Nuclear Dipole-Dipole Field in an InGaAs/GaAs Quantum Dot Ensemble.”
Physical Review B, 2009. https://doi.org/10.1103/physrevb.80.205303.
ieee: T. Auer et al., “Measurement of the Knight field and local nuclear
dipole-dipole field in an InGaAs/GaAs quantum dot ensemble,” Physical Review
B, 2009.
mla: Auer, T., et al. “Measurement of the Knight Field and Local Nuclear Dipole-Dipole
Field in an InGaAs/GaAs Quantum Dot Ensemble.” Physical Review B, 2009,
doi:10.1103/physrevb.80.205303.
short: T. Auer, R. Oulton, A. Bauschulte, D.R. Yakovlev, M. Bayer, S.Y. Verbin,
R.V. Cherbunin, D. Reuter, A.D. Wieck, Physical Review B (2009).
date_created: 2019-03-26T08:57:34Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevb.80.205303
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
status: public
title: Measurement of the Knight field and local nuclear dipole-dipole field in an
InGaAs/GaAs quantum dot ensemble
type: journal_article
user_id: '42514'
year: '2009'
...
---
_id: '8588'
article_number: '012043'
author:
- first_name: S F
full_name: Fischer, S F
last_name: Fischer
- first_name: J L
full_name: Deborde, J L
last_name: Deborde
- first_name: U
full_name: Kunze, U
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A D
full_name: Wieck, A D
last_name: Wieck
citation:
ama: 'Fischer SF, Deborde JL, Kunze U, Reuter D, Wieck AD. Lateral electron tunnelling
spectroscopy in etched GaAs/AlGaAs-based nanostructures. Journal of Physics:
Conference Series. 2009. doi:10.1088/1742-6596/193/1/012043'
apa: 'Fischer, S. F., Deborde, J. L., Kunze, U., Reuter, D., & Wieck, A. D.
(2009). Lateral electron tunnelling spectroscopy in etched GaAs/AlGaAs-based nanostructures.
Journal of Physics: Conference Series. https://doi.org/10.1088/1742-6596/193/1/012043'
bibtex: '@article{Fischer_Deborde_Kunze_Reuter_Wieck_2009, title={Lateral electron
tunnelling spectroscopy in etched GaAs/AlGaAs-based nanostructures}, DOI={10.1088/1742-6596/193/1/012043},
number={012043}, journal={Journal of Physics: Conference Series}, author={Fischer,
S F and Deborde, J L and Kunze, U and Reuter, Dirk and Wieck, A D}, year={2009}
}'
chicago: 'Fischer, S F, J L Deborde, U Kunze, Dirk Reuter, and A D Wieck. “Lateral
Electron Tunnelling Spectroscopy in Etched GaAs/AlGaAs-Based Nanostructures.”
Journal of Physics: Conference Series, 2009. https://doi.org/10.1088/1742-6596/193/1/012043.'
ieee: 'S. F. Fischer, J. L. Deborde, U. Kunze, D. Reuter, and A. D. Wieck, “Lateral
electron tunnelling spectroscopy in etched GaAs/AlGaAs-based nanostructures,”
Journal of Physics: Conference Series, 2009.'
mla: 'Fischer, S. F., et al. “Lateral Electron Tunnelling Spectroscopy in Etched
GaAs/AlGaAs-Based Nanostructures.” Journal of Physics: Conference Series,
012043, 2009, doi:10.1088/1742-6596/193/1/012043.'
short: 'S.F. Fischer, J.L. Deborde, U. Kunze, D. Reuter, A.D. Wieck, Journal of
Physics: Conference Series (2009).'
date_created: 2019-03-26T08:58:33Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/1742-6596/193/1/012043
language:
- iso: eng
publication: 'Journal of Physics: Conference Series'
publication_identifier:
issn:
- 1742-6596
publication_status: published
status: public
title: Lateral electron tunnelling spectroscopy in etched GaAs/AlGaAs-based nanostructures
type: journal_article
user_id: '42514'
year: '2009'
...
---
_id: '8589'
article_number: '012043'
author:
- first_name: S F
full_name: Fischer, S F
last_name: Fischer
- first_name: J L
full_name: Deborde, J L
last_name: Deborde
- first_name: U
full_name: Kunze, U
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A D
full_name: Wieck, A D
last_name: Wieck
citation:
ama: 'Fischer SF, Deborde JL, Kunze U, Reuter D, Wieck AD. Lateral electron tunnelling
spectroscopy in etched GaAs/AlGaAs-based nanostructures. Journal of Physics:
Conference Series. 2009. doi:10.1088/1742-6596/193/1/012043'
apa: 'Fischer, S. F., Deborde, J. L., Kunze, U., Reuter, D., & Wieck, A. D.
(2009). Lateral electron tunnelling spectroscopy in etched GaAs/AlGaAs-based nanostructures.
Journal of Physics: Conference Series. https://doi.org/10.1088/1742-6596/193/1/012043'
bibtex: '@article{Fischer_Deborde_Kunze_Reuter_Wieck_2009, title={Lateral electron
tunnelling spectroscopy in etched GaAs/AlGaAs-based nanostructures}, DOI={10.1088/1742-6596/193/1/012043},
number={012043}, journal={Journal of Physics: Conference Series}, author={Fischer,
S F and Deborde, J L and Kunze, U and Reuter, Dirk and Wieck, A D}, year={2009}
}'
chicago: 'Fischer, S F, J L Deborde, U Kunze, Dirk Reuter, and A D Wieck. “Lateral
Electron Tunnelling Spectroscopy in Etched GaAs/AlGaAs-Based Nanostructures.”
Journal of Physics: Conference Series, 2009. https://doi.org/10.1088/1742-6596/193/1/012043.'
ieee: 'S. F. Fischer, J. L. Deborde, U. Kunze, D. Reuter, and A. D. Wieck, “Lateral
electron tunnelling spectroscopy in etched GaAs/AlGaAs-based nanostructures,”
Journal of Physics: Conference Series, 2009.'
mla: 'Fischer, S. F., et al. “Lateral Electron Tunnelling Spectroscopy in Etched
GaAs/AlGaAs-Based Nanostructures.” Journal of Physics: Conference Series,
012043, 2009, doi:10.1088/1742-6596/193/1/012043.'
short: 'S.F. Fischer, J.L. Deborde, U. Kunze, D. Reuter, A.D. Wieck, Journal of
Physics: Conference Series (2009).'
date_created: 2019-03-26T08:59:15Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/1742-6596/193/1/012043
language:
- iso: eng
publication: 'Journal of Physics: Conference Series'
publication_identifier:
issn:
- 1742-6596
publication_status: published
status: public
title: Lateral electron tunnelling spectroscopy in etched GaAs/AlGaAs-based nanostructures
type: journal_article
user_id: '42514'
year: '2009'
...
---
_id: '8591'
author:
- first_name: M.
full_name: Cerchez, M.
last_name: Cerchez
- first_name: T.
full_name: Heinzel, T.
last_name: Heinzel
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A.D.
full_name: Wieck, A.D.
last_name: Wieck
citation:
ama: Cerchez M, Heinzel T, Reuter D, Wieck AD. Magnetic barrier in a two-dimensional
hole gas. Superlattices and Microstructures. 2009:723-727. doi:10.1016/j.spmi.2009.07.016
apa: Cerchez, M., Heinzel, T., Reuter, D., & Wieck, A. D. (2009). Magnetic barrier
in a two-dimensional hole gas. Superlattices and Microstructures, 723–727.
https://doi.org/10.1016/j.spmi.2009.07.016
bibtex: '@article{Cerchez_Heinzel_Reuter_Wieck_2009, title={Magnetic barrier in
a two-dimensional hole gas}, DOI={10.1016/j.spmi.2009.07.016},
journal={Superlattices and Microstructures}, author={Cerchez, M. and Heinzel,
T. and Reuter, Dirk and Wieck, A.D.}, year={2009}, pages={723–727} }'
chicago: Cerchez, M., T. Heinzel, Dirk Reuter, and A.D. Wieck. “Magnetic Barrier
in a Two-Dimensional Hole Gas.” Superlattices and Microstructures, 2009,
723–27. https://doi.org/10.1016/j.spmi.2009.07.016.
ieee: M. Cerchez, T. Heinzel, D. Reuter, and A. D. Wieck, “Magnetic barrier in a
two-dimensional hole gas,” Superlattices and Microstructures, pp. 723–727,
2009.
mla: Cerchez, M., et al. “Magnetic Barrier in a Two-Dimensional Hole Gas.” Superlattices
and Microstructures, 2009, pp. 723–27, doi:10.1016/j.spmi.2009.07.016.
short: M. Cerchez, T. Heinzel, D. Reuter, A.D. Wieck, Superlattices and Microstructures
(2009) 723–727.
date_created: 2019-03-26T09:02:20Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/j.spmi.2009.07.016
language:
- iso: eng
page: 723-727
publication: Superlattices and Microstructures
publication_identifier:
issn:
- 0749-6036
publication_status: published
status: public
title: Magnetic barrier in a two-dimensional hole gas
type: journal_article
user_id: '42514'
year: '2009'
...
---
_id: '8592'
author:
- first_name: H.
full_name: Kurtze, H.
last_name: Kurtze
- first_name: J.
full_name: Seebeck, J.
last_name: Seebeck
- first_name: P.
full_name: Gartner, P.
last_name: Gartner
- first_name: D. R.
full_name: Yakovlev, D. R.
last_name: Yakovlev
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: M.
full_name: Bayer, M.
last_name: Bayer
- first_name: F.
full_name: Jahnke, F.
last_name: Jahnke
citation:
ama: Kurtze H, Seebeck J, Gartner P, et al. Carrier relaxation dynamics in self-assembled
semiconductor quantum dots. Physical Review B. 2009. doi:10.1103/physrevb.80.235319
apa: Kurtze, H., Seebeck, J., Gartner, P., Yakovlev, D. R., Reuter, D., Wieck, A.
D., … Jahnke, F. (2009). Carrier relaxation dynamics in self-assembled semiconductor
quantum dots. Physical Review B. https://doi.org/10.1103/physrevb.80.235319
bibtex: '@article{Kurtze_Seebeck_Gartner_Yakovlev_Reuter_Wieck_Bayer_Jahnke_2009,
title={Carrier relaxation dynamics in self-assembled semiconductor quantum dots},
DOI={10.1103/physrevb.80.235319},
journal={Physical Review B}, author={Kurtze, H. and Seebeck, J. and Gartner, P.
and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Bayer, M. and Jahnke,
F.}, year={2009} }'
chicago: Kurtze, H., J. Seebeck, P. Gartner, D. R. Yakovlev, Dirk Reuter, A. D.
Wieck, M. Bayer, and F. Jahnke. “Carrier Relaxation Dynamics in Self-Assembled
Semiconductor Quantum Dots.” Physical Review B, 2009. https://doi.org/10.1103/physrevb.80.235319.
ieee: H. Kurtze et al., “Carrier relaxation dynamics in self-assembled semiconductor
quantum dots,” Physical Review B, 2009.
mla: Kurtze, H., et al. “Carrier Relaxation Dynamics in Self-Assembled Semiconductor
Quantum Dots.” Physical Review B, 2009, doi:10.1103/physrevb.80.235319.
short: H. Kurtze, J. Seebeck, P. Gartner, D.R. Yakovlev, D. Reuter, A.D. Wieck,
M. Bayer, F. Jahnke, Physical Review B (2009).
date_created: 2019-03-26T09:04:15Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevb.80.235319
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
status: public
title: Carrier relaxation dynamics in self-assembled semiconductor quantum dots
type: journal_article
user_id: '42514'
year: '2009'
...
---
_id: '4152'
abstract:
- lang: eng
text: A novel technique to form periodically nanostructured Si surface morphologies
based on nanosphere lithography (NSL) and He ion implantation induced swelling
is studied in detail. It is shown that by implantation of keV He ions through
the nanometric openings of NSL masks regular arrays of hillocks and rings can
be created on silicon surfaces. The shape and size of these surface features can
be easily controlled by adjusting the ion dose and energy as well as the mask
size. Feature heights of more than 100 nm can be obtained, while feature distances
are typically 1.15 or 2 (hillock or ring) nanosphere radii, which are chosen to
be between 100 and 500 nm in this study. Atomic force and scanning electron microscopy
measurements of the surface morphology are supplemented by cross-sectional transmission
electron microscopy, revealing the inner structure of hillocks to consist of a
central cavity surrounded by a hierarchical arrangement of smaller voids. The
surface morphologies developed here have the potential to be useful for fixing
and separating nano-objects on a silicon surface.
article_number: 1181-DD10-02
article_type: original
author:
- first_name: Frederic J.C.
full_name: Fischer, Frederic J.C.
last_name: Fischer
- first_name: Michael
full_name: Weinl, Michael
last_name: Weinl
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: Bernd
full_name: Stritzker, Bernd
last_name: Stritzker
citation:
ama: Fischer FJC, Weinl M, Lindner J, Stritzker B. Nanoscale Surface Patterning
of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks.
MRS Proceedings. 2009;1181. doi:10.1557/proc-1181-dd10-02
apa: Fischer, F. J. C., Weinl, M., Lindner, J., & Stritzker, B. (2009). Nanoscale
Surface Patterning of Silicon Using Local Swelling Induced by He Implantation
through NSL-Masks. MRS Proceedings, 1181. https://doi.org/10.1557/proc-1181-dd10-02
bibtex: '@article{Fischer_Weinl_Lindner_Stritzker_2009, title={Nanoscale Surface
Patterning of Silicon Using Local Swelling Induced by He Implantation through
NSL-Masks}, volume={1181}, DOI={10.1557/proc-1181-dd10-02},
number={1181-DD10-02}, journal={MRS Proceedings}, publisher={Cambridge University
Press (CUP)}, author={Fischer, Frederic J.C. and Weinl, Michael and Lindner, Jörg
and Stritzker, Bernd}, year={2009} }'
chicago: Fischer, Frederic J.C., Michael Weinl, Jörg Lindner, and Bernd Stritzker.
“Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation
through NSL-Masks.” MRS Proceedings 1181 (2009). https://doi.org/10.1557/proc-1181-dd10-02.
ieee: F. J. C. Fischer, M. Weinl, J. Lindner, and B. Stritzker, “Nanoscale Surface
Patterning of Silicon Using Local Swelling Induced by He Implantation through
NSL-Masks,” MRS Proceedings, vol. 1181, 2009.
mla: Fischer, Frederic J. C., et al. “Nanoscale Surface Patterning of Silicon Using
Local Swelling Induced by He Implantation through NSL-Masks.” MRS Proceedings,
vol. 1181, 1181-DD10-02, Cambridge University Press (CUP), 2009, doi:10.1557/proc-1181-dd10-02.
short: F.J.C. Fischer, M. Weinl, J. Lindner, B. Stritzker, MRS Proceedings 1181
(2009).
conference:
end_date: 2009-04-17
location: San Franicsco (USA)
name: MRS Spring Meeting 2009
start_date: 2009-04-13
date_created: 2018-08-27T13:21:44Z
date_updated: 2022-01-06T07:00:26Z
department:
- _id: '15'
- _id: '286'
doi: 10.1557/proc-1181-dd10-02
intvolume: ' 1181'
language:
- iso: eng
publication: MRS Proceedings
publication_identifier:
issn:
- 1946-4274
publication_status: published
publisher: Cambridge University Press (CUP)
status: public
title: Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He
Implantation through NSL-Masks
type: journal_article
user_id: '55706'
volume: 1181
year: '2009'
...
---
_id: '4182'
abstract:
- lang: eng
text: "We demonstrate that an optically driven spin of a carrier in a quantum dot
undergoes indirect dephasing via\r\nconditional optically induced charge evolution
even in the absence of any direct interaction between the spin\r\nand its environment.
A generic model for the indirect dephasing with a three-component system with
spin,\r\ncharge, and reservoir is proposed. This indirect decoherence channel
is studied for the optical spin manipulation\r\nin a quantum dot with a microscopic
description of the charge-phonon interaction taking into account its\r\nnon-Markovian
nature."
article_number: '042331'
article_type: original
author:
- first_name: A.
full_name: Grodecka, A.
last_name: Grodecka
- first_name: P.
full_name: Machnikowski, P.
last_name: Machnikowski
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
citation:
ama: Grodecka A, Machnikowski P, Förstner J. Indirect spin dephasing via charge-state
decoherence in optical control schemes in quantum dots. Physical Review A.
2009;79(4). doi:10.1103/physreva.79.042331
apa: Grodecka, A., Machnikowski, P., & Förstner, J. (2009). Indirect spin dephasing
via charge-state decoherence in optical control schemes in quantum dots. Physical
Review A, 79(4). https://doi.org/10.1103/physreva.79.042331
bibtex: '@article{Grodecka_Machnikowski_Förstner_2009, title={Indirect spin dephasing
via charge-state decoherence in optical control schemes in quantum dots}, volume={79},
DOI={10.1103/physreva.79.042331},
number={4042331}, journal={Physical Review A}, publisher={American Physical Society
(APS)}, author={Grodecka, A. and Machnikowski, P. and Förstner, Jens}, year={2009}
}'
chicago: Grodecka, A., P. Machnikowski, and Jens Förstner. “Indirect Spin Dephasing
via Charge-State Decoherence in Optical Control Schemes in Quantum Dots.” Physical
Review A 79, no. 4 (2009). https://doi.org/10.1103/physreva.79.042331.
ieee: A. Grodecka, P. Machnikowski, and J. Förstner, “Indirect spin dephasing via
charge-state decoherence in optical control schemes in quantum dots,” Physical
Review A, vol. 79, no. 4, 2009.
mla: Grodecka, A., et al. “Indirect Spin Dephasing via Charge-State Decoherence
in Optical Control Schemes in Quantum Dots.” Physical Review A, vol. 79,
no. 4, 042331, American Physical Society (APS), 2009, doi:10.1103/physreva.79.042331.
short: A. Grodecka, P. Machnikowski, J. Förstner, Physical Review A 79 (2009).
date_created: 2018-08-28T09:32:32Z
date_updated: 2022-01-06T07:00:31Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1103/physreva.79.042331
file:
- access_level: open_access
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T09:33:22Z
date_updated: 2018-09-04T19:36:35Z
file_id: '4183'
file_name: 2009 Grodecka,Machnikowski,Förstner_Indirect spin dephasing via charge-state
decoherence in optical control schemes in quantum dots.pdf
file_size: 192120
relation: main_file
file_date_updated: 2018-09-04T19:36:35Z
has_accepted_license: '1'
intvolume: ' 79'
issue: '4'
keyword:
- tet_topic_qd
language:
- iso: eng
oa: '1'
publication: Physical Review A
publication_identifier:
issn:
- 1050-2947
- 1094-1622
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Indirect spin dephasing via charge-state decoherence in optical control schemes
in quantum dots
type: journal_article
urn: '41826'
user_id: '158'
volume: 79
year: '2009'
...
---
_id: '4192'
abstract:
- lang: eng
text: "Buried ion beam synthesized 3C-SiC layers were revealed to the surface of
silicon wafers to provide lattice matched substrates for GaN thin film epitaxy.
Both epitaxial SiC/Si(1 1 1) and SiC/Si(0 0 1) growth surfaces with either six-
or four-fold crystal symmetry, respectively, were formed. GaN thin film growth
was achieved by ion beam assisted molecular beam epitaxy (IBA–MBE) which – owing
to the energy and momentum transfer of the ions – allows to deposit epitaxial
thin films at particularly low growth temperatures where both the stable hexagonal
and the metastable cubic polytype of GaN can be formed. It is shown by X-ray diffraction
(XRD) and cross-sectional transmission electron microscopy (XTEM) that using appropriate
fluxes of Ga atoms both purely hexagonal and purely cubic GaN films can\r\nbe
grown epitaxially on SiC/Si(1 1 1) and SiC/Si(0 0 1), respectively. Thereby Ga
rich growth conditions seem to stabilize the formation of the cubic polytype.
It is obvious from XTEM studies that the high density of crystal defects in the
SiC layer is not transferred onto the growing GaN films and that the crystalline
quality of GaN films improves with increasing film thickness. The influence of
surface roughness and wettability, interfacial cavities and the nucleation of
twin-type defects at the GaN/SiC interface on the crystalline quality of the GaN
thin films is discussed."
article_type: original
author:
- first_name: M.
full_name: Häberlen, M.
last_name: Häberlen
- first_name: J.W.
full_name: Gerlach, J.W.
last_name: Gerlach
- first_name: B.
full_name: Murphy, B.
last_name: Murphy
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: B.
full_name: Stritzker, B.
last_name: Stritzker
citation:
ama: Häberlen M, Gerlach JW, Murphy B, Lindner J, Stritzker B. Structural characterization
of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si. Journal of
Crystal Growth. 2009;312(6):762-769. doi:10.1016/j.jcrysgro.2009.12.048
apa: Häberlen, M., Gerlach, J. W., Murphy, B., Lindner, J., & Stritzker, B.
(2009). Structural characterization of cubic and hexagonal GaN thin films grown
by IBA–MBE on SiC/Si. Journal of Crystal Growth, 312(6), 762–769.
https://doi.org/10.1016/j.jcrysgro.2009.12.048
bibtex: '@article{Häberlen_Gerlach_Murphy_Lindner_Stritzker_2009, title={Structural
characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si},
volume={312}, DOI={10.1016/j.jcrysgro.2009.12.048},
number={6}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Häberlen,
M. and Gerlach, J.W. and Murphy, B. and Lindner, Jörg and Stritzker, B.}, year={2009},
pages={762–769} }'
chicago: 'Häberlen, M., J.W. Gerlach, B. Murphy, Jörg Lindner, and B. Stritzker.
“Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown by IBA–MBE
on SiC/Si.” Journal of Crystal Growth 312, no. 6 (2009): 762–69. https://doi.org/10.1016/j.jcrysgro.2009.12.048.'
ieee: M. Häberlen, J. W. Gerlach, B. Murphy, J. Lindner, and B. Stritzker, “Structural
characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si,”
Journal of Crystal Growth, vol. 312, no. 6, pp. 762–769, 2009.
mla: Häberlen, M., et al. “Structural Characterization of Cubic and Hexagonal GaN
Thin Films Grown by IBA–MBE on SiC/Si.” Journal of Crystal Growth, vol.
312, no. 6, Elsevier BV, 2009, pp. 762–69, doi:10.1016/j.jcrysgro.2009.12.048.
short: M. Häberlen, J.W. Gerlach, B. Murphy, J. Lindner, B. Stritzker, Journal of
Crystal Growth 312 (2009) 762–769.
date_created: 2018-08-28T11:50:05Z
date_updated: 2022-01-06T07:00:32Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1016/j.jcrysgro.2009.12.048
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T11:50:45Z
date_updated: 2018-08-28T11:50:45Z
file_id: '4193'
file_name: Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown
by IBA-MBE on SiC-Si.pdf
file_size: 828431
relation: main_file
success: 1
file_date_updated: 2018-08-28T11:50:45Z
has_accepted_license: '1'
intvolume: ' 312'
issue: '6'
language:
- iso: eng
page: 762-769
publication: Journal of Crystal Growth
publication_identifier:
issn:
- 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: Structural characterization of cubic and hexagonal GaN thin films grown by
IBA–MBE on SiC/Si
type: journal_article
user_id: '55706'
volume: 312
year: '2009'
...
---
_id: '4196'
abstract:
- lang: eng
text: The growth of cubic group III-nitrides is a direct way to eliminate polarization
effects, which inherently limit the fabrication of normally-off heterojunction
field-effect transistors (HFETs) in GaN technology. HFET structures were fabricated
of non-polar cubic AlGaN/GaN hetero layers grown by plasma assisted molecular
beam epitaxy (MBE) on free standing 3C-SiC (001). The electrical insulation of
3C-SiC was realised by Ar+ implantation before c-AlGaN/GaN MBE. The structural
properties of the epilayers were studied by highresolution x-ray diffraction (HRXRD).
HFETs with normally off and normally-on characteristics were fabricated of cubic
AlGaN/GaN. Capacitance-voltage (CV) characteristics of thegate contact were performed
to detect the electron channel at the c-AlGaN/GaN hetero interface.
article_type: original
author:
- first_name: Elena
full_name: Tschumak, Elena
last_name: Tschumak
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: M.
full_name: Bürger, M.
last_name: Bürger
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
- first_name: H.
full_name: Nagasawa, H.
last_name: Nagasawa
- first_name: M.
full_name: Abe, M.
last_name: Abe
- first_name: Donald
full_name: As, Donald
last_name: As
citation:
ama: Tschumak E, Lindner J, Bürger M, et al. Non-polar cubic AlGaN/GaN HFETs grown
by MBE on Ar+implanted 3C-SiC (001). physica status solidi (c). 2009;7(1):104-107.
doi:10.1002/pssc.200982615
apa: Tschumak, E., Lindner, J., Bürger, M., Lischka, K., Nagasawa, H., Abe, M.,
& As, D. (2009). Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted
3C-SiC (001). Physica Status Solidi (C), 7(1), 104–107. https://doi.org/10.1002/pssc.200982615
bibtex: '@article{Tschumak_Lindner_Bürger_Lischka_Nagasawa_Abe_As_2009, title={Non-polar
cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001)}, volume={7},
DOI={10.1002/pssc.200982615},
number={1}, journal={physica status solidi (c)}, publisher={Wiley}, author={Tschumak,
Elena and Lindner, Jörg and Bürger, M. and Lischka, K. and Nagasawa, H. and Abe,
M. and As, Donald}, year={2009}, pages={104–107} }'
chicago: 'Tschumak, Elena, Jörg Lindner, M. Bürger, K. Lischka, H. Nagasawa, M.
Abe, and Donald As. “Non-Polar Cubic AlGaN/GaN HFETs Grown by MBE on Ar+implanted
3C-SiC (001).” Physica Status Solidi (C) 7, no. 1 (2009): 104–7. https://doi.org/10.1002/pssc.200982615.'
ieee: E. Tschumak et al., “Non-polar cubic AlGaN/GaN HFETs grown by MBE on
Ar+implanted 3C-SiC (001),” physica status solidi (c), vol. 7, no. 1, pp.
104–107, 2009.
mla: Tschumak, Elena, et al. “Non-Polar Cubic AlGaN/GaN HFETs Grown by MBE on Ar+implanted
3C-SiC (001).” Physica Status Solidi (C), vol. 7, no. 1, Wiley, 2009, pp.
104–07, doi:10.1002/pssc.200982615.
short: E. Tschumak, J. Lindner, M. Bürger, K. Lischka, H. Nagasawa, M. Abe, D. As,
Physica Status Solidi (C) 7 (2009) 104–107.
date_created: 2018-08-28T12:15:20Z
date_updated: 2022-01-06T07:00:33Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1002/pssc.200982615
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:16:11Z
date_updated: 2018-08-28T12:16:11Z
file_id: '4197'
file_name: Nonpolar cubic AlGaN-GaN HFETs grown by MBE on Ar+ implanted 3C SiC (001).pdf
file_size: 213837
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:16:11Z
has_accepted_license: '1'
intvolume: ' 7'
issue: '1'
language:
- iso: eng
page: 104-107
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
- 1610-1642
publication_status: published
publisher: Wiley
status: public
title: Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001)
type: journal_article
user_id: '55706'
volume: 7
year: '2009'
...