---
_id: '8690'
article_number: '163117'
author:
- first_name: Stephan
full_name: Lüttjohann, Stephan
last_name: Lüttjohann
- first_name: Cedrik
full_name: Meier, Cedrik
last_name: Meier
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
citation:
ama: Lüttjohann S, Meier C, Lorke A, Reuter D, Wieck AD. Screening effects in InAs
quantum-dot structures observed by photoluminescence and capacitance-voltage spectra.
Applied Physics Letters. 2005. doi:10.1063/1.2112192
apa: Lüttjohann, S., Meier, C., Lorke, A., Reuter, D., & Wieck, A. D. (2005).
Screening effects in InAs quantum-dot structures observed by photoluminescence
and capacitance-voltage spectra. Applied Physics Letters. https://doi.org/10.1063/1.2112192
bibtex: '@article{Lüttjohann_Meier_Lorke_Reuter_Wieck_2005, title={Screening effects
in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage
spectra}, DOI={10.1063/1.2112192},
number={163117}, journal={Applied Physics Letters}, author={Lüttjohann, Stephan
and Meier, Cedrik and Lorke, Axel and Reuter, Dirk and Wieck, Andreas D.}, year={2005}
}'
chicago: Lüttjohann, Stephan, Cedrik Meier, Axel Lorke, Dirk Reuter, and Andreas
D. Wieck. “Screening Effects in InAs Quantum-Dot Structures Observed by Photoluminescence
and Capacitance-Voltage Spectra.” Applied Physics Letters, 2005. https://doi.org/10.1063/1.2112192.
ieee: S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, and A. D. Wieck, “Screening
effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage
spectra,” Applied Physics Letters, 2005.
mla: Lüttjohann, Stephan, et al. “Screening Effects in InAs Quantum-Dot Structures
Observed by Photoluminescence and Capacitance-Voltage Spectra.” Applied Physics
Letters, 163117, 2005, doi:10.1063/1.2112192.
short: S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics
Letters (2005).
date_created: 2019-03-27T10:39:18Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2112192
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Screening effects in InAs quantum-dot structures observed by photoluminescence
and capacitance-voltage spectra
type: journal_article
user_id: '42514'
year: '2005'
...
---
_id: '8691'
article_number: '232108'
author:
- first_name: Boris
full_name: Grbić, Boris
last_name: Grbić
- first_name: Renaud
full_name: Leturcq, Renaud
last_name: Leturcq
- first_name: Klaus
full_name: Ensslin, Klaus
last_name: Ensslin
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
citation:
ama: Grbić B, Leturcq R, Ensslin K, Reuter D, Wieck AD. Single-hole transistor in
p-type GaAs∕AlGaAs heterostructures. Applied Physics Letters. 2005. doi:10.1063/1.2139994
apa: Grbić, B., Leturcq, R., Ensslin, K., Reuter, D., & Wieck, A. D. (2005).
Single-hole transistor in p-type GaAs∕AlGaAs heterostructures. Applied Physics
Letters. https://doi.org/10.1063/1.2139994
bibtex: '@article{Grbić_Leturcq_Ensslin_Reuter_Wieck_2005, title={Single-hole transistor
in p-type GaAs∕AlGaAs heterostructures}, DOI={10.1063/1.2139994},
number={232108}, journal={Applied Physics Letters}, author={Grbić, Boris and Leturcq,
Renaud and Ensslin, Klaus and Reuter, Dirk and Wieck, Andreas D.}, year={2005}
}'
chicago: Grbić, Boris, Renaud Leturcq, Klaus Ensslin, Dirk Reuter, and Andreas D.
Wieck. “Single-Hole Transistor in p-Type GaAs∕AlGaAs Heterostructures.” Applied
Physics Letters, 2005. https://doi.org/10.1063/1.2139994.
ieee: B. Grbić, R. Leturcq, K. Ensslin, D. Reuter, and A. D. Wieck, “Single-hole
transistor in p-type GaAs∕AlGaAs heterostructures,” Applied Physics Letters,
2005.
mla: Grbić, Boris, et al. “Single-Hole Transistor in p-Type GaAs∕AlGaAs Heterostructures.”
Applied Physics Letters, 232108, 2005, doi:10.1063/1.2139994.
short: B. Grbić, R. Leturcq, K. Ensslin, D. Reuter, A.D. Wieck, Applied Physics
Letters (2005).
date_created: 2019-03-27T11:12:28Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2139994
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Single-hole transistor in p-type GaAs∕AlGaAs heterostructures
type: journal_article
user_id: '42514'
year: '2005'
...
---
_id: '8693'
author:
- first_name: M
full_name: Knop, M
last_name: Knop
- first_name: M
full_name: Richter, M
last_name: Richter
- first_name: R
full_name: Maßmann, R
last_name: Maßmann
- first_name: U
full_name: Wieser, U
last_name: Wieser
- first_name: U
full_name: Kunze, U
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: C
full_name: Riedesel, C
last_name: Riedesel
- first_name: A D
full_name: Wieck, A D
last_name: Wieck
citation:
ama: Knop M, Richter M, Maßmann R, et al. Preparation of electron waveguide devices
on GaAs/AlGaAs using negative-tone resist calixarene. Semiconductor Science
and Technology. 2005:814-818. doi:10.1088/0268-1242/20/8/031
apa: Knop, M., Richter, M., Maßmann, R., Wieser, U., Kunze, U., Reuter, D., … Wieck,
A. D. (2005). Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone
resist calixarene. Semiconductor Science and Technology, 814–818. https://doi.org/10.1088/0268-1242/20/8/031
bibtex: '@article{Knop_Richter_Maßmann_Wieser_Kunze_Reuter_Riedesel_Wieck_2005,
title={Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone
resist calixarene}, DOI={10.1088/0268-1242/20/8/031},
journal={Semiconductor Science and Technology}, author={Knop, M and Richter, M
and Maßmann, R and Wieser, U and Kunze, U and Reuter, Dirk and Riedesel, C and
Wieck, A D}, year={2005}, pages={814–818} }'
chicago: Knop, M, M Richter, R Maßmann, U Wieser, U Kunze, Dirk Reuter, C Riedesel,
and A D Wieck. “Preparation of Electron Waveguide Devices on GaAs/AlGaAs Using
Negative-Tone Resist Calixarene.” Semiconductor Science and Technology,
2005, 814–18. https://doi.org/10.1088/0268-1242/20/8/031.
ieee: M. Knop et al., “Preparation of electron waveguide devices on GaAs/AlGaAs
using negative-tone resist calixarene,” Semiconductor Science and Technology,
pp. 814–818, 2005.
mla: Knop, M., et al. “Preparation of Electron Waveguide Devices on GaAs/AlGaAs
Using Negative-Tone Resist Calixarene.” Semiconductor Science and Technology,
2005, pp. 814–18, doi:10.1088/0268-1242/20/8/031.
short: M. Knop, M. Richter, R. Maßmann, U. Wieser, U. Kunze, D. Reuter, C. Riedesel,
A.D. Wieck, Semiconductor Science and Technology (2005) 814–818.
date_created: 2019-03-27T11:16:26Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/0268-1242/20/8/031
language:
- iso: eng
page: 814-818
publication: Semiconductor Science and Technology
publication_identifier:
issn:
- 0268-1242
- 1361-6641
publication_status: published
status: public
title: Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone
resist calixarene
type: journal_article
user_id: '42514'
year: '2005'
...
---
_id: '8694'
author:
- first_name: R.
full_name: Scheibner, R.
last_name: Scheibner
- first_name: H.
full_name: Buhmann, H.
last_name: Buhmann
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: M. N.
full_name: Kiselev, M. N.
last_name: Kiselev
- first_name: L. W.
full_name: Molenkamp, L. W.
last_name: Molenkamp
citation:
ama: Scheibner R, Buhmann H, Reuter D, Kiselev MN, Molenkamp LW. Thermopower of
a Kondo Spin-Correlated Quantum Dot. Physical Review Letters. 2005. doi:10.1103/physrevlett.95.176602
apa: Scheibner, R., Buhmann, H., Reuter, D., Kiselev, M. N., & Molenkamp, L.
W. (2005). Thermopower of a Kondo Spin-Correlated Quantum Dot. Physical Review
Letters. https://doi.org/10.1103/physrevlett.95.176602
bibtex: '@article{Scheibner_Buhmann_Reuter_Kiselev_Molenkamp_2005, title={Thermopower
of a Kondo Spin-Correlated Quantum Dot}, DOI={10.1103/physrevlett.95.176602},
journal={Physical Review Letters}, author={Scheibner, R. and Buhmann, H. and Reuter,
Dirk and Kiselev, M. N. and Molenkamp, L. W.}, year={2005} }'
chicago: Scheibner, R., H. Buhmann, Dirk Reuter, M. N. Kiselev, and L. W. Molenkamp.
“Thermopower of a Kondo Spin-Correlated Quantum Dot.” Physical Review Letters,
2005. https://doi.org/10.1103/physrevlett.95.176602.
ieee: R. Scheibner, H. Buhmann, D. Reuter, M. N. Kiselev, and L. W. Molenkamp, “Thermopower
of a Kondo Spin-Correlated Quantum Dot,” Physical Review Letters, 2005.
mla: Scheibner, R., et al. “Thermopower of a Kondo Spin-Correlated Quantum Dot.”
Physical Review Letters, 2005, doi:10.1103/physrevlett.95.176602.
short: R. Scheibner, H. Buhmann, D. Reuter, M.N. Kiselev, L.W. Molenkamp, Physical
Review Letters (2005).
date_created: 2019-03-27T11:23:48Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevlett.95.176602
language:
- iso: eng
publication: Physical Review Letters
publication_identifier:
issn:
- 0031-9007
- 1079-7114
publication_status: published
status: public
title: Thermopower of a Kondo Spin-Correlated Quantum Dot
type: journal_article
user_id: '42514'
year: '2005'
...
---
_id: '8708'
author:
- first_name: F.
full_name: SCHULZE-WISCHELER, F.
last_name: SCHULZE-WISCHELER
- first_name: F.
full_name: HOHLS, F.
last_name: HOHLS
- first_name: U.
full_name: ZEITLER, U.
last_name: ZEITLER
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: WIECK, A. D.
last_name: WIECK
- first_name: R. J.
full_name: HAUG, R. J.
last_name: HAUG
citation:
ama: SCHULZE-WISCHELER F, HOHLS F, ZEITLER U, Reuter D, WIECK AD, HAUG RJ. PHONON
EXCITATIONS OF COMPOSITE FERMION LANDAU LEVELS. International Journal of Modern
Physics B. 2005:3857-3864. doi:10.1142/s0217979204027608
apa: SCHULZE-WISCHELER, F., HOHLS, F., ZEITLER, U., Reuter, D., WIECK, A. D., &
HAUG, R. J. (2005). PHONON EXCITATIONS OF COMPOSITE FERMION LANDAU LEVELS. International
Journal of Modern Physics B, 3857–3864. https://doi.org/10.1142/s0217979204027608
bibtex: '@article{SCHULZE-WISCHELER_HOHLS_ZEITLER_Reuter_WIECK_HAUG_2005, title={PHONON
EXCITATIONS OF COMPOSITE FERMION LANDAU LEVELS}, DOI={10.1142/s0217979204027608},
journal={International Journal of Modern Physics B}, author={SCHULZE-WISCHELER,
F. and HOHLS, F. and ZEITLER, U. and Reuter, Dirk and WIECK, A. D. and HAUG, R.
J.}, year={2005}, pages={3857–3864} }'
chicago: SCHULZE-WISCHELER, F., F. HOHLS, U. ZEITLER, Dirk Reuter, A. D. WIECK,
and R. J. HAUG. “PHONON EXCITATIONS OF COMPOSITE FERMION LANDAU LEVELS.” International
Journal of Modern Physics B, 2005, 3857–64. https://doi.org/10.1142/s0217979204027608.
ieee: F. SCHULZE-WISCHELER, F. HOHLS, U. ZEITLER, D. Reuter, A. D. WIECK, and R.
J. HAUG, “PHONON EXCITATIONS OF COMPOSITE FERMION LANDAU LEVELS,” International
Journal of Modern Physics B, pp. 3857–3864, 2005.
mla: SCHULZE-WISCHELER, F., et al. “PHONON EXCITATIONS OF COMPOSITE FERMION LANDAU
LEVELS.” International Journal of Modern Physics B, 2005, pp. 3857–64,
doi:10.1142/s0217979204027608.
short: F. SCHULZE-WISCHELER, F. HOHLS, U. ZEITLER, D. Reuter, A.D. WIECK, R.J. HAUG,
International Journal of Modern Physics B (2005) 3857–3864.
date_created: 2019-03-27T12:16:30Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1142/s0217979204027608
language:
- iso: eng
page: 3857-3864
publication: International Journal of Modern Physics B
publication_identifier:
issn:
- 0217-9792
- 1793-6578
publication_status: published
status: public
title: PHONON EXCITATIONS OF COMPOSITE FERMION LANDAU LEVELS
type: journal_article
user_id: '42514'
year: '2005'
...
---
_id: '8713'
author:
- first_name: F.
full_name: SCHULZE-WISCHELER, F.
last_name: SCHULZE-WISCHELER
- first_name: F.
full_name: HOHLS, F.
last_name: HOHLS
- first_name: U.
full_name: ZEITLER, U.
last_name: ZEITLER
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: WIECK, A. D.
last_name: WIECK
- first_name: R. J.
full_name: HAUG, R. J.
last_name: HAUG
citation:
ama: SCHULZE-WISCHELER F, HOHLS F, ZEITLER U, Reuter D, WIECK AD, HAUG RJ. PHONON
EXCITATIONS OF COMPOSITE FERMION LANDAU LEVELS. International Journal of Modern
Physics B. 2005:3857-3864. doi:10.1142/s0217979204027608
apa: SCHULZE-WISCHELER, F., HOHLS, F., ZEITLER, U., Reuter, D., WIECK, A. D., &
HAUG, R. J. (2005). PHONON EXCITATIONS OF COMPOSITE FERMION LANDAU LEVELS. International
Journal of Modern Physics B, 3857–3864. https://doi.org/10.1142/s0217979204027608
bibtex: '@article{SCHULZE-WISCHELER_HOHLS_ZEITLER_Reuter_WIECK_HAUG_2005, title={PHONON
EXCITATIONS OF COMPOSITE FERMION LANDAU LEVELS}, DOI={10.1142/s0217979204027608},
journal={International Journal of Modern Physics B}, author={SCHULZE-WISCHELER,
F. and HOHLS, F. and ZEITLER, U. and Reuter, Dirk and WIECK, A. D. and HAUG, R.
J.}, year={2005}, pages={3857–3864} }'
chicago: SCHULZE-WISCHELER, F., F. HOHLS, U. ZEITLER, Dirk Reuter, A. D. WIECK,
and R. J. HAUG. “PHONON EXCITATIONS OF COMPOSITE FERMION LANDAU LEVELS.” International
Journal of Modern Physics B, 2005, 3857–64. https://doi.org/10.1142/s0217979204027608.
ieee: F. SCHULZE-WISCHELER, F. HOHLS, U. ZEITLER, D. Reuter, A. D. WIECK, and R.
J. HAUG, “PHONON EXCITATIONS OF COMPOSITE FERMION LANDAU LEVELS,” International
Journal of Modern Physics B, pp. 3857–3864, 2005.
mla: SCHULZE-WISCHELER, F., et al. “PHONON EXCITATIONS OF COMPOSITE FERMION LANDAU
LEVELS.” International Journal of Modern Physics B, 2005, pp. 3857–64,
doi:10.1142/s0217979204027608.
short: F. SCHULZE-WISCHELER, F. HOHLS, U. ZEITLER, D. Reuter, A.D. WIECK, R.J. HAUG,
International Journal of Modern Physics B (2005) 3857–3864.
date_created: 2019-03-27T12:23:01Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1142/s0217979204027608
language:
- iso: eng
page: 3857-3864
publication: International Journal of Modern Physics B
publication_identifier:
issn:
- 0217-9792
- 1793-6578
publication_status: published
status: public
title: PHONON EXCITATIONS OF COMPOSITE FERMION LANDAU LEVELS
type: journal_article
user_id: '42514'
year: '2005'
...
---
_id: '29691'
article_number: '152102'
author:
- first_name: V.
full_name: Höink, V.
last_name: Höink
- first_name: Marc
full_name: Sacher, Marc
id: '26883'
last_name: Sacher
orcid: 0000-0001-6217-336X
- first_name: J.
full_name: Schmalhorst, J.
last_name: Schmalhorst
- first_name: G.
full_name: Reiss, G.
last_name: Reiss
- first_name: D.
full_name: Engel, D.
last_name: Engel
- first_name: D.
full_name: Junk, D.
last_name: Junk
- first_name: A.
full_name: Ehresmann, A.
last_name: Ehresmann
citation:
ama: Höink V, Sacher M, Schmalhorst J, et al. Postannealing of magnetic tunnel junctions
with ion-bombardment-modified exchange bias. Applied Physics Letters. 2005;86(15).
doi:10.1063/1.1899771
apa: Höink, V., Sacher, M., Schmalhorst, J., Reiss, G., Engel, D., Junk, D., &
Ehresmann, A. (2005). Postannealing of magnetic tunnel junctions with ion-bombardment-modified
exchange bias. Applied Physics Letters, 86(15), Article 152102.
https://doi.org/10.1063/1.1899771
bibtex: '@article{Höink_Sacher_Schmalhorst_Reiss_Engel_Junk_Ehresmann_2005, title={Postannealing
of magnetic tunnel junctions with ion-bombardment-modified exchange bias}, volume={86},
DOI={10.1063/1.1899771}, number={15152102},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Höink,
V. and Sacher, Marc and Schmalhorst, J. and Reiss, G. and Engel, D. and Junk,
D. and Ehresmann, A.}, year={2005} }'
chicago: Höink, V., Marc Sacher, J. Schmalhorst, G. Reiss, D. Engel, D. Junk, and
A. Ehresmann. “Postannealing of Magnetic Tunnel Junctions with Ion-Bombardment-Modified
Exchange Bias.” Applied Physics Letters 86, no. 15 (2005). https://doi.org/10.1063/1.1899771.
ieee: 'V. Höink et al., “Postannealing of magnetic tunnel junctions with
ion-bombardment-modified exchange bias,” Applied Physics Letters, vol.
86, no. 15, Art. no. 152102, 2005, doi: 10.1063/1.1899771.'
mla: Höink, V., et al. “Postannealing of Magnetic Tunnel Junctions with Ion-Bombardment-Modified
Exchange Bias.” Applied Physics Letters, vol. 86, no. 15, 152102, AIP Publishing,
2005, doi:10.1063/1.1899771.
short: V. Höink, M. Sacher, J. Schmalhorst, G. Reiss, D. Engel, D. Junk, A. Ehresmann,
Applied Physics Letters 86 (2005).
date_created: 2022-01-31T10:21:57Z
date_updated: 2024-04-23T12:15:06Z
department:
- _id: '15'
doi: 10.1063/1.1899771
extern: '1'
intvolume: ' 86'
issue: '15'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Postannealing of magnetic tunnel junctions with ion-bombardment-modified exchange
bias
type: journal_article
user_id: '26883'
volume: 86
year: '2005'
...
---
_id: '29689'
article_number: '123711'
author:
- first_name: J.
full_name: Schmalhorst, J.
last_name: Schmalhorst
- first_name: Marc
full_name: Sacher, Marc
id: '26883'
last_name: Sacher
orcid: 0000-0001-6217-336X
- first_name: A.
full_name: Thomas, A.
last_name: Thomas
- first_name: H.
full_name: Brückl, H.
last_name: Brückl
- first_name: G.
full_name: Reiss, G.
last_name: Reiss
- first_name: K.
full_name: Starke, K.
last_name: Starke
citation:
ama: Schmalhorst J, Sacher M, Thomas A, Brückl H, Reiss G, Starke K. X-ray absorption
and magnetic circular dichroism studies of annealed magnetic tunnel junctions.
Journal of Applied Physics. 2005;97(12). doi:10.1063/1.1939086
apa: Schmalhorst, J., Sacher, M., Thomas, A., Brückl, H., Reiss, G., & Starke,
K. (2005). X-ray absorption and magnetic circular dichroism studies of annealed
magnetic tunnel junctions. Journal of Applied Physics, 97(12), Article
123711. https://doi.org/10.1063/1.1939086
bibtex: '@article{Schmalhorst_Sacher_Thomas_Brückl_Reiss_Starke_2005, title={X-ray
absorption and magnetic circular dichroism studies of annealed magnetic tunnel
junctions}, volume={97}, DOI={10.1063/1.1939086},
number={12123711}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Schmalhorst, J. and Sacher, Marc and Thomas, A. and Brückl, H. and Reiss,
G. and Starke, K.}, year={2005} }'
chicago: Schmalhorst, J., Marc Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke.
“X-Ray Absorption and Magnetic Circular Dichroism Studies of Annealed Magnetic
Tunnel Junctions.” Journal of Applied Physics 97, no. 12 (2005). https://doi.org/10.1063/1.1939086.
ieee: 'J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke,
“X-ray absorption and magnetic circular dichroism studies of annealed magnetic
tunnel junctions,” Journal of Applied Physics, vol. 97, no. 12, Art. no.
123711, 2005, doi: 10.1063/1.1939086.'
mla: Schmalhorst, J., et al. “X-Ray Absorption and Magnetic Circular Dichroism Studies
of Annealed Magnetic Tunnel Junctions.” Journal of Applied Physics, vol.
97, no. 12, 123711, AIP Publishing, 2005, doi:10.1063/1.1939086.
short: J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, K. Starke, Journal
of Applied Physics 97 (2005).
date_created: 2022-01-31T10:20:49Z
date_updated: 2024-04-23T12:17:13Z
department:
- _id: '15'
doi: 10.1063/1.1939086
extern: '1'
intvolume: ' 97'
issue: '12'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: X-ray absorption and magnetic circular dichroism studies of annealed magnetic
tunnel junctions
type: journal_article
user_id: '26883'
volume: 97
year: '2005'
...
---
_id: '29688'
article_number: '123711'
author:
- first_name: J.
full_name: Schmalhorst, J.
last_name: Schmalhorst
- first_name: Marc
full_name: Sacher, Marc
id: '26883'
last_name: Sacher
orcid: 0000-0001-6217-336X
- first_name: A.
full_name: Thomas, A.
last_name: Thomas
- first_name: H.
full_name: Brückl, H.
last_name: Brückl
- first_name: G.
full_name: Reiss, G.
last_name: Reiss
- first_name: K.
full_name: Starke, K.
last_name: Starke
citation:
ama: Schmalhorst J, Sacher M, Thomas A, Brückl H, Reiss G, Starke K. X-ray absorption
and magnetic circular dichroism studies of annealed magnetic tunnel junctions.
Journal of Applied Physics. 2005;97(12). doi:10.1063/1.1939086
apa: Schmalhorst, J., Sacher, M., Thomas, A., Brückl, H., Reiss, G., & Starke,
K. (2005). X-ray absorption and magnetic circular dichroism studies of annealed
magnetic tunnel junctions. Journal of Applied Physics, 97(12), Article
123711. https://doi.org/10.1063/1.1939086
bibtex: '@article{Schmalhorst_Sacher_Thomas_Brückl_Reiss_Starke_2005, title={X-ray
absorption and magnetic circular dichroism studies of annealed magnetic tunnel
junctions}, volume={97}, DOI={10.1063/1.1939086},
number={12123711}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Schmalhorst, J. and Sacher, Marc and Thomas, A. and Brückl, H. and Reiss,
G. and Starke, K.}, year={2005} }'
chicago: Schmalhorst, J., Marc Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke.
“X-Ray Absorption and Magnetic Circular Dichroism Studies of Annealed Magnetic
Tunnel Junctions.” Journal of Applied Physics 97, no. 12 (2005). https://doi.org/10.1063/1.1939086.
ieee: 'J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke,
“X-ray absorption and magnetic circular dichroism studies of annealed magnetic
tunnel junctions,” Journal of Applied Physics, vol. 97, no. 12, Art. no.
123711, 2005, doi: 10.1063/1.1939086.'
mla: Schmalhorst, J., et al. “X-Ray Absorption and Magnetic Circular Dichroism Studies
of Annealed Magnetic Tunnel Junctions.” Journal of Applied Physics, vol.
97, no. 12, 123711, AIP Publishing, 2005, doi:10.1063/1.1939086.
short: J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, K. Starke, Journal
of Applied Physics 97 (2005).
date_created: 2022-01-31T10:19:13Z
date_updated: 2024-04-23T12:17:37Z
department:
- _id: '15'
doi: 10.1063/1.1939086
extern: '1'
intvolume: ' 97'
issue: '12'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: X-ray absorption and magnetic circular dichroism studies of annealed magnetic
tunnel junctions
type: journal_article
user_id: '26883'
volume: 97
year: '2005'
...
---
_id: '29687'
article_number: '103532'
author:
- first_name: Marc
full_name: Sacher, Marc
id: '26883'
last_name: Sacher
orcid: 0000-0001-6217-336X
- first_name: J.
full_name: Sauerwald, J.
last_name: Sauerwald
- first_name: J.
full_name: Schmalhorst, J.
last_name: Schmalhorst
- first_name: G.
full_name: Reiss, G.
last_name: Reiss
citation:
ama: Sacher M, Sauerwald J, Schmalhorst J, Reiss G. Influence of noble-gas ion irradiation
on alumina barrier of magnetic tunnel junctions. Journal of Applied Physics.
2005;98(10). doi:10.1063/1.2134883
apa: Sacher, M., Sauerwald, J., Schmalhorst, J., & Reiss, G. (2005). Influence
of noble-gas ion irradiation on alumina barrier of magnetic tunnel junctions.
Journal of Applied Physics, 98(10), Article 103532. https://doi.org/10.1063/1.2134883
bibtex: '@article{Sacher_Sauerwald_Schmalhorst_Reiss_2005, title={Influence of noble-gas
ion irradiation on alumina barrier of magnetic tunnel junctions}, volume={98},
DOI={10.1063/1.2134883}, number={10103532},
journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Sacher,
Marc and Sauerwald, J. and Schmalhorst, J. and Reiss, G.}, year={2005} }'
chicago: Sacher, Marc, J. Sauerwald, J. Schmalhorst, and G. Reiss. “Influence of
Noble-Gas Ion Irradiation on Alumina Barrier of Magnetic Tunnel Junctions.” Journal
of Applied Physics 98, no. 10 (2005). https://doi.org/10.1063/1.2134883.
ieee: 'M. Sacher, J. Sauerwald, J. Schmalhorst, and G. Reiss, “Influence of noble-gas
ion irradiation on alumina barrier of magnetic tunnel junctions,” Journal of
Applied Physics, vol. 98, no. 10, Art. no. 103532, 2005, doi: 10.1063/1.2134883.'
mla: Sacher, Marc, et al. “Influence of Noble-Gas Ion Irradiation on Alumina Barrier
of Magnetic Tunnel Junctions.” Journal of Applied Physics, vol. 98, no.
10, 103532, AIP Publishing, 2005, doi:10.1063/1.2134883.
short: M. Sacher, J. Sauerwald, J. Schmalhorst, G. Reiss, Journal of Applied Physics
98 (2005).
date_created: 2022-01-31T10:18:33Z
date_updated: 2024-04-23T12:17:22Z
department:
- _id: '15'
doi: 10.1063/1.2134883
extern: '1'
intvolume: ' 98'
issue: '10'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Influence of noble-gas ion irradiation on alumina barrier of magnetic tunnel
junctions
type: journal_article
user_id: '26883'
volume: 98
year: '2005'
...
---
_id: '40475'
author:
- first_name: Claudia
full_name: Tenberge, Claudia
id: '67302'
last_name: Tenberge
citation:
ama: 'Tenberge C. Zur Förderung der Persönlichkeitsentwicklung in handlungsintensiven
Lernformen im naturwissenschaftlich-technischen Sachunterricht. . In: Hartinger
A, Kahlert J, eds. Förderung des wissenschaftlichen Nachwuchses. ; 2005:219-234.'
apa: Tenberge, C. (2005). Zur Förderung der Persönlichkeitsentwicklung in handlungsintensiven
Lernformen im naturwissenschaftlich-technischen Sachunterricht. . In A. Hartinger
& J. Kahlert (Eds.), Förderung des wissenschaftlichen Nachwuchses (pp.
219–234).
bibtex: '@inbook{Tenberge_2005, place={Bad Heilbrunn/Obb.}, title={Zur Förderung
der Persönlichkeitsentwicklung in handlungsintensiven Lernformen im naturwissenschaftlich-technischen
Sachunterricht. }, booktitle={Förderung des wissenschaftlichen Nachwuchses}, author={Tenberge,
Claudia}, editor={Hartinger, Andreas and Kahlert, Joachim}, year={2005}, pages={219–234}
}'
chicago: Tenberge, Claudia. “Zur Förderung der Persönlichkeitsentwicklung in handlungsintensiven
Lernformen im naturwissenschaftlich-technischen Sachunterricht. .” In Förderung
des wissenschaftlichen Nachwuchses, edited by Andreas Hartinger and Joachim
Kahlert, 219–34. Bad Heilbrunn/Obb., 2005.
ieee: C. Tenberge, “Zur Förderung der Persönlichkeitsentwicklung in handlungsintensiven
Lernformen im naturwissenschaftlich-technischen Sachunterricht. ,” in Förderung
des wissenschaftlichen Nachwuchses, A. Hartinger and J. Kahlert, Eds. Bad
Heilbrunn/Obb., 2005, pp. 219–234.
mla: Tenberge, Claudia. “Zur Förderung der Persönlichkeitsentwicklung in handlungsintensiven
Lernformen im naturwissenschaftlich-technischen Sachunterricht. .” Förderung
des wissenschaftlichen Nachwuchses, edited by Andreas Hartinger and Joachim
Kahlert, 2005, pp. 219–34.
short: 'C. Tenberge, in: A. Hartinger, J. Kahlert (Eds.), Förderung des wissenschaftlichen
Nachwuchses, Bad Heilbrunn/Obb., 2005, pp. 219–234.'
date_created: 2023-01-27T08:30:44Z
date_updated: 2023-01-27T08:54:25Z
department:
- _id: '588'
editor:
- first_name: 'Andreas '
full_name: 'Hartinger, Andreas '
last_name: Hartinger
- first_name: Joachim
full_name: Kahlert, Joachim
last_name: Kahlert
language:
- iso: ger
page: 219-234
place: Bad Heilbrunn/Obb.
publication: Förderung des wissenschaftlichen Nachwuchses
publication_status: published
status: public
title: 'Zur Förderung der Persönlichkeitsentwicklung in handlungsintensiven Lernformen
im naturwissenschaftlich-technischen Sachunterricht. '
type: book_chapter
user_id: '67302'
year: '2005'
...
---
_id: '43272'
abstract:
- lang: eng
text: "Optical interband transitions in a series of In0.23Ga0.77As–GaN\U0001D465As1−\U0001D465
quantum well samples are investigated. For changing nitrogen content, a type I-type
II transition is identified by a detailed analysis of photoluminescence and photoreflectance
spectra. Experimental results are compared systematically with spectra calculated
by a microscopic theory. A valence band offset parameter of (1.5±0.5)eV is extracted
for this heterostructure system.This work was supported by the Deutsche Forschungsgemeinschaft
(Research Group on Metastable Compound Semiconductors and Heterostructures), by
AFOSR (F49620-02-1-0380) and the Max-Planck Research Prize of the Max-Planck Society
and Humboldt Foundation. We thank Stanko Tomić (Daresbury Laboratory) for fruitful
discussions.\r\n"
article_number: '081903'
author:
- first_name: C.
full_name: Schlichenmaier, C.
last_name: Schlichenmaier
- first_name: H.
full_name: Grüning, H.
last_name: Grüning
- first_name: A.
full_name: Thränhardt, A.
last_name: Thränhardt
- first_name: P.J.
full_name: Klar, P.J.
last_name: Klar
- first_name: B.
full_name: Kunert, B.
last_name: Kunert
- first_name: K.
full_name: Volz, K.
last_name: Volz
- first_name: W.
full_name: Stolz, W.
last_name: Stolz
- first_name: W.
full_name: Heimbrodt, W.
last_name: Heimbrodt
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: S.W.
full_name: Koch, S.W.
last_name: Koch
citation:
ama: Schlichenmaier C, Grüning H, Thränhardt A, et al. Type I-type II transition
in InGaAs–GaNAs heterostructures. Applied Physics Letters. 2005;86(8).
doi:American Institute
of Physics
apa: Schlichenmaier, C., Grüning, H., Thränhardt, A., Klar, P. J., Kunert, B., Volz,
K., Stolz, W., Heimbrodt, W., Meier, T., & Koch, S. W. (2005). Type I-type
II transition in InGaAs–GaNAs heterostructures. Applied Physics Letters,
86(8), Article 081903. https://doi.org/American
Institute of Physics
bibtex: '@article{Schlichenmaier_Grüning_Thränhardt_Klar_Kunert_Volz_Stolz_Heimbrodt_Meier_Koch_2005,
title={Type I-type II transition in InGaAs–GaNAs heterostructures}, volume={86},
DOI={American Institute
of Physics}, number={8081903}, journal={Applied Physics Letters}, publisher={American
Institute of Physics}, author={Schlichenmaier, C. and Grüning, H. and Thränhardt,
A. and Klar, P.J. and Kunert, B. and Volz, K. and Stolz, W. and Heimbrodt, W.
and Meier, Torsten and Koch, S.W.}, year={2005} }'
chicago: Schlichenmaier, C., H. Grüning, A. Thränhardt, P.J. Klar, B. Kunert, K.
Volz, W. Stolz, W. Heimbrodt, Torsten Meier, and S.W. Koch. “Type I-Type II Transition
in InGaAs–GaNAs Heterostructures.” Applied Physics Letters 86, no. 8 (2005).
https://doi.org/American
Institute of Physics.
ieee: 'C. Schlichenmaier et al., “Type I-type II transition in InGaAs–GaNAs
heterostructures,” Applied Physics Letters, vol. 86, no. 8, Art. no. 081903,
2005, doi: American Institute
of Physics.'
mla: Schlichenmaier, C., et al. “Type I-Type II Transition in InGaAs–GaNAs Heterostructures.”
Applied Physics Letters, vol. 86, no. 8, 081903, American Institute of
Physics, 2005, doi:American
Institute of Physics.
short: C. Schlichenmaier, H. Grüning, A. Thränhardt, P.J. Klar, B. Kunert, K. Volz,
W. Stolz, W. Heimbrodt, T. Meier, S.W. Koch, Applied Physics Letters 86 (2005).
date_created: 2023-04-01T23:04:44Z
date_updated: 2023-04-01T23:04:46Z
department:
- _id: '293'
doi: American Institute of Physics
extern: '1'
intvolume: ' 86'
issue: '8'
language:
- iso: eng
main_file_link:
- url: https://aip.scitation.org/doi/abs/10.1063/1.1870132
publication: Applied Physics Letters
publication_status: published
publisher: American Institute of Physics
status: public
title: Type I-type II transition in InGaAs–GaNAs heterostructures
type: journal_article
user_id: '49063'
volume: 86
year: '2005'
...
---
_id: '43271'
abstract:
- lang: eng
text: The optical and electronic properties of semiconductor heterostructures in
the vicinity of photonic crystals are discussed. The theoretical approach provides
a self-consistent solution of the dynamics of the electromagnetic field and the
material excitations. Due to the influence of the structured dielectric environment
on the Coulomb interaction, the exciton resonances and the quasiequilibrium carrier
densities in the spatially homogeneous semiconductor become space dependent. It
is demonstrated that these inhomogeneities lead to distinct modifications of the
optical absorption and gain spectra. As an application, numerically calculated
density-dependent optical spectra are analyzed for an array of semiconductor quantum
wires which are close to a two-dimensional photonic crystal. The spatial inhomogeneities
result in novel excitonic absorption features and modification of the optical
gain in these structures.
article_number: '035346'
author:
- first_name: Matthias
full_name: Reichelt, Matthias
id: '138'
last_name: Reichelt
- first_name: B.
full_name: Pasenow, B.
last_name: Pasenow
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: T.
full_name: Stroucken, T.
last_name: Stroucken
- first_name: S.W.
full_name: Koch, S.W.
last_name: Koch
citation:
ama: Reichelt M, Pasenow B, Meier T, Stroucken T, Koch SW. Spatially inhomogeneous
optical gain in semiconductor photonic-crystal structures. Physical Review
B. 2005;71(3). doi:10.1103/PhysRevB.71.035346
apa: Reichelt, M., Pasenow, B., Meier, T., Stroucken, T., & Koch, S. W. (2005). Spatially
inhomogeneous optical gain in semiconductor photonic-crystal structures. Physical
Review B, 71(3), Article 035346. https://doi.org/10.1103/PhysRevB.71.035346
bibtex: '@article{Reichelt_Pasenow_Meier_Stroucken_Koch_2005, title={ Spatially
inhomogeneous optical gain in semiconductor photonic-crystal structures}, volume={71},
DOI={10.1103/PhysRevB.71.035346},
number={3035346}, journal={Physical Review B}, publisher={035346}, author={Reichelt,
Matthias and Pasenow, B. and Meier, Torsten and Stroucken, T. and Koch, S.W.},
year={2005} }'
chicago: Reichelt, Matthias, B. Pasenow, Torsten Meier, T. Stroucken, and S.W. Koch.
“ Spatially Inhomogeneous Optical Gain in Semiconductor Photonic-Crystal Structures.”
Physical Review B 71, no. 3 (2005). https://doi.org/10.1103/PhysRevB.71.035346.
ieee: 'M. Reichelt, B. Pasenow, T. Meier, T. Stroucken, and S. W. Koch, “ Spatially
inhomogeneous optical gain in semiconductor photonic-crystal structures,” Physical
Review B, vol. 71, no. 3, Art. no. 035346, 2005, doi: 10.1103/PhysRevB.71.035346.'
mla: Reichelt, Matthias, et al. “ Spatially Inhomogeneous Optical Gain in Semiconductor
Photonic-Crystal Structures.” Physical Review B, vol. 71, no. 3, 035346,
035346, 2005, doi:10.1103/PhysRevB.71.035346.
short: M. Reichelt, B. Pasenow, T. Meier, T. Stroucken, S.W. Koch, Physical Review
B 71 (2005).
date_created: 2023-04-01T23:00:22Z
date_updated: 2023-04-01T23:00:25Z
department:
- _id: '293'
doi: 10.1103/PhysRevB.71.035346
extern: '1'
intvolume: ' 71'
issue: '3'
language:
- iso: eng
main_file_link:
- url: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.71.035346
publication: Physical Review B
publication_status: published
publisher: '035346'
status: public
title: ' Spatially inhomogeneous optical gain in semiconductor photonic-crystal structures'
type: journal_article
user_id: '49063'
volume: 71
year: '2005'
...
---
_id: '23506'
abstract:
- lang: eng
text: The optical properties of semiconductor quantum wells embedded in one-dimensional
photonic crystal structures are analyzed by a self-consistent solution of Maxwell’s
equations and a microscopic many-body theory of the material excitations. For
a field mode spectrally below the photonic band edge it is shown that the optical
absorption and gain are enhanced, exceeding by more than 1 order of magnitude
the values of a homogeneous medium. For the photonic crystal structure inside
a microcavity the gain increases superlinearly with the number of wells and for
more than five wells exceeds the gain of a corresponding vertical-cavity surface-emitting
laser.
author:
- first_name: Bernhard
full_name: Pasenow, Bernhard
last_name: Pasenow
- first_name: Matthias
full_name: Reichelt, Matthias
id: '138'
last_name: Reichelt
- first_name: Tineke
full_name: Stroucken, Tineke
last_name: Stroucken
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: Stephan W.
full_name: Koch, Stephan W.
last_name: Koch
- first_name: Aramis R.
full_name: Zakharian, Aramis R.
last_name: Zakharian
- first_name: Jerome V.
full_name: Moloney, Jerome V.
last_name: Moloney
citation:
ama: Pasenow B, Reichelt M, Stroucken T, et al. Enhanced light-matter interaction
in semiconductor heterostructures embedded in one-dimensional photonic crystals.
Journal of the Optical Society of America B. 2005;22(9):2039-2048. doi:10.1364/josab.22.002039
apa: Pasenow, B., Reichelt, M., Stroucken, T., Meier, T., Koch, S. W., Zakharian,
A. R., & Moloney, J. V. (2005). Enhanced light-matter interaction in semiconductor
heterostructures embedded in one-dimensional photonic crystals. Journal of
the Optical Society of America B, 22(9), 2039–2048. https://doi.org/10.1364/josab.22.002039
bibtex: '@article{Pasenow_Reichelt_Stroucken_Meier_Koch_Zakharian_Moloney_2005,
title={Enhanced light-matter interaction in semiconductor heterostructures embedded
in one-dimensional photonic crystals}, volume={22}, DOI={10.1364/josab.22.002039},
number={9}, journal={Journal of the Optical Society of America B}, author={Pasenow,
Bernhard and Reichelt, Matthias and Stroucken, Tineke and Meier, Torsten and Koch,
Stephan W. and Zakharian, Aramis R. and Moloney, Jerome V.}, year={2005}, pages={2039–2048}
}'
chicago: 'Pasenow, Bernhard, Matthias Reichelt, Tineke Stroucken, Torsten Meier,
Stephan W. Koch, Aramis R. Zakharian, and Jerome V. Moloney. “Enhanced Light-Matter
Interaction in Semiconductor Heterostructures Embedded in One-Dimensional Photonic
Crystals.” Journal of the Optical Society of America B 22, no. 9 (2005):
2039–48. https://doi.org/10.1364/josab.22.002039.'
ieee: 'B. Pasenow et al., “Enhanced light-matter interaction in semiconductor
heterostructures embedded in one-dimensional photonic crystals,” Journal of
the Optical Society of America B, vol. 22, no. 9, pp. 2039–2048, 2005, doi:
10.1364/josab.22.002039.'
mla: Pasenow, Bernhard, et al. “Enhanced Light-Matter Interaction in Semiconductor
Heterostructures Embedded in One-Dimensional Photonic Crystals.” Journal of
the Optical Society of America B, vol. 22, no. 9, 2005, pp. 2039–48, doi:10.1364/josab.22.002039.
short: B. Pasenow, M. Reichelt, T. Stroucken, T. Meier, S.W. Koch, A.R. Zakharian,
J.V. Moloney, Journal of the Optical Society of America B 22 (2005) 2039–2048.
date_created: 2021-08-24T09:28:32Z
date_updated: 2023-04-24T06:02:06Z
department:
- _id: '15'
- _id: '170'
- _id: '293'
doi: 10.1364/josab.22.002039
extern: '1'
intvolume: ' 22'
issue: '9'
language:
- iso: eng
page: 2039-2048
publication: Journal of the Optical Society of America B
publication_identifier:
issn:
- 0740-3224
- 1520-8540
publication_status: published
status: public
title: Enhanced light-matter interaction in semiconductor heterostructures embedded
in one-dimensional photonic crystals
type: journal_article
user_id: '49063'
volume: 22
year: '2005'
...
---
_id: '23502'
abstract:
- lang: eng
text: Significant aspects of the light–matter interaction can be strongly modified
in suitably designed systems consisting of semiconductor nanostructures and dielectric
photonic crystals. To analyze such effects, a microscopic theory is presented,
which is capable of describing the optoelectronic properties of such hybrid systems
via a self-consistent solution of the dynamics of the optical field and the photoexcitations
of the material. The theory is applied to investigate the local excitonic resonances,
which arise as a consequence of the modified Coulomb interaction in the vicinity
of a structured dielectric medium. The excitation of a coherent superposition
of the spatially inhomogeneous optical transitions induces an intricate wave packet
dynamics. In the presence of dephasing and relaxation processes, the coherent
oscillations are damped and the photoexcited carriers relax into spatially inhomogeneous
quasi-equilibrium distributions.
author:
- first_name: B.
full_name: Pasenow, B.
last_name: Pasenow
- first_name: Matthias
full_name: Reichelt, Matthias
id: '138'
last_name: Reichelt
- first_name: T.
full_name: Stroucken, T.
last_name: Stroucken
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: S. W.
full_name: Koch, S. W.
last_name: Koch
citation:
ama: Pasenow B, Reichelt M, Stroucken T, Meier T, Koch SW. Excitonic wave packet
dynamics in semiconductor photonic-crystal structures. Physical Review B.
2005;71(19):195321. doi:10.1103/physrevb.71.195321
apa: Pasenow, B., Reichelt, M., Stroucken, T., Meier, T., & Koch, S. W. (2005).
Excitonic wave packet dynamics in semiconductor photonic-crystal structures. Physical
Review B, 71(19), 195321. https://doi.org/10.1103/physrevb.71.195321
bibtex: '@article{Pasenow_Reichelt_Stroucken_Meier_Koch_2005, title={Excitonic wave
packet dynamics in semiconductor photonic-crystal structures}, volume={71}, DOI={10.1103/physrevb.71.195321},
number={19}, journal={Physical Review B}, author={Pasenow, B. and Reichelt, Matthias
and Stroucken, T. and Meier, Torsten and Koch, S. W.}, year={2005}, pages={195321}
}'
chicago: 'Pasenow, B., Matthias Reichelt, T. Stroucken, Torsten Meier, and S. W.
Koch. “Excitonic Wave Packet Dynamics in Semiconductor Photonic-Crystal Structures.”
Physical Review B 71, no. 19 (2005): 195321. https://doi.org/10.1103/physrevb.71.195321.'
ieee: 'B. Pasenow, M. Reichelt, T. Stroucken, T. Meier, and S. W. Koch, “Excitonic
wave packet dynamics in semiconductor photonic-crystal structures,” Physical
Review B, vol. 71, no. 19, p. 195321, 2005, doi: 10.1103/physrevb.71.195321.'
mla: Pasenow, B., et al. “Excitonic Wave Packet Dynamics in Semiconductor Photonic-Crystal
Structures.” Physical Review B, vol. 71, no. 19, 2005, p. 195321, doi:10.1103/physrevb.71.195321.
short: B. Pasenow, M. Reichelt, T. Stroucken, T. Meier, S.W. Koch, Physical Review
B 71 (2005) 195321.
date_created: 2021-08-24T09:25:03Z
date_updated: 2023-04-24T06:07:42Z
department:
- _id: '15'
- _id: '170'
- _id: '293'
doi: 10.1103/physrevb.71.195321
extern: '1'
intvolume: ' 71'
issue: '19'
language:
- iso: eng
page: '195321'
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
status: public
title: Excitonic wave packet dynamics in semiconductor photonic-crystal structures
type: journal_article
user_id: '49063'
volume: 71
year: '2005'
...
---
_id: '23504'
abstract:
- lang: eng
text: The coherent optical injection and temporal decay of spin and charge currents
in semiconductor heterostructures is described microscopically, including excitonic
effects, many-body Coulomb correlations, and the carrier LO-phonon coupling on
the second-order Born-Markov level, as well as nonperturbative light-field-induced
intraband and interband excitations. A nonmonotonic dependence of the currents
on the intensities of the laser beams is predicted. Enhanced damping of the spin
current relative to the charge current is obtained as a consequence of Coulomb
scattering.
article_number: '086606'
author:
- first_name: Huynh Thanh
full_name: Duc, Huynh Thanh
last_name: Duc
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: S. W.
full_name: Koch, S. W.
last_name: Koch
citation:
ama: Duc HT, Meier T, Koch SW. Microscopic Analysis of the Coherent Optical Generation
and the Decay of Charge and Spin Currents in Semiconductor Heterostructures. Physical
Review Letters. 2005;95(8). doi:10.1103/physrevlett.95.086606
apa: Duc, H. T., Meier, T., & Koch, S. W. (2005). Microscopic Analysis of the
Coherent Optical Generation and the Decay of Charge and Spin Currents in Semiconductor
Heterostructures. Physical Review Letters, 95(8), Article 086606.
https://doi.org/10.1103/physrevlett.95.086606
bibtex: '@article{Duc_Meier_Koch_2005, title={Microscopic Analysis of the Coherent
Optical Generation and the Decay of Charge and Spin Currents in Semiconductor
Heterostructures}, volume={95}, DOI={10.1103/physrevlett.95.086606},
number={8086606}, journal={Physical Review Letters}, author={Duc, Huynh Thanh
and Meier, Torsten and Koch, S. W.}, year={2005} }'
chicago: Duc, Huynh Thanh, Torsten Meier, and S. W. Koch. “Microscopic Analysis
of the Coherent Optical Generation and the Decay of Charge and Spin Currents in
Semiconductor Heterostructures.” Physical Review Letters 95, no. 8 (2005).
https://doi.org/10.1103/physrevlett.95.086606.
ieee: 'H. T. Duc, T. Meier, and S. W. Koch, “Microscopic Analysis of the Coherent
Optical Generation and the Decay of Charge and Spin Currents in Semiconductor
Heterostructures,” Physical Review Letters, vol. 95, no. 8, Art. no. 086606,
2005, doi: 10.1103/physrevlett.95.086606.'
mla: Duc, Huynh Thanh, et al. “Microscopic Analysis of the Coherent Optical Generation
and the Decay of Charge and Spin Currents in Semiconductor Heterostructures.”
Physical Review Letters, vol. 95, no. 8, 086606, 2005, doi:10.1103/physrevlett.95.086606.
short: H.T. Duc, T. Meier, S.W. Koch, Physical Review Letters 95 (2005).
date_created: 2021-08-24T09:27:55Z
date_updated: 2023-04-24T06:02:55Z
department:
- _id: '15'
- _id: '170'
- _id: '293'
doi: 10.1103/physrevlett.95.086606
extern: '1'
intvolume: ' 95'
issue: '8'
language:
- iso: eng
publication: Physical Review Letters
publication_identifier:
issn:
- 0031-9007
- 1079-7114
publication_status: published
status: public
title: Microscopic Analysis of the Coherent Optical Generation and the Decay of Charge
and Spin Currents in Semiconductor Heterostructures
type: journal_article
user_id: '49063'
volume: 95
year: '2005'
...
---
_id: '23507'
abstract:
- lang: eng
text: "A microscopic model is used to analyze gain and loss properties of (GaIn)(NAs)∕GaAs
quantum wells in the 1.3–1.55μm range, including Auger and radiative recombination.
The calculations show that, as long as good material quality can be achieved,
growing highly compressively strained samples is preferable due to their specific
band structure properties. Optimum laser operation is possible slightly above
a peak gain of 1000cm−1\r\n."
article_number: '261109'
author:
- first_name: C.
full_name: Schlichenmaier, C.
last_name: Schlichenmaier
- first_name: A.
full_name: Thränhardt, A.
last_name: Thränhardt
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: S. W.
full_name: Koch, S. W.
last_name: Koch
- first_name: W. W.
full_name: Chow, W. W.
last_name: Chow
- first_name: J.
full_name: Hader, J.
last_name: Hader
- first_name: J. V.
full_name: Moloney, J. V.
last_name: Moloney
citation:
ama: Schlichenmaier C, Thränhardt A, Meier T, et al. Gain and carrier losses of
(GaIn)(NAs) heterostructures in the 1300–1550 nm range. Applied Physics Letters.
2005;87(26). doi:10.1063/1.2149371
apa: Schlichenmaier, C., Thränhardt, A., Meier, T., Koch, S. W., Chow, W. W., Hader,
J., & Moloney, J. V. (2005). Gain and carrier losses of (GaIn)(NAs) heterostructures
in the 1300–1550 nm range. Applied Physics Letters, 87(26), Article
261109. https://doi.org/10.1063/1.2149371
bibtex: '@article{Schlichenmaier_Thränhardt_Meier_Koch_Chow_Hader_Moloney_2005,
title={Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550
nm range}, volume={87}, DOI={10.1063/1.2149371},
number={26261109}, journal={Applied Physics Letters}, author={Schlichenmaier,
C. and Thränhardt, A. and Meier, Torsten and Koch, S. W. and Chow, W. W. and Hader,
J. and Moloney, J. V.}, year={2005} }'
chicago: Schlichenmaier, C., A. Thränhardt, Torsten Meier, S. W. Koch, W. W. Chow,
J. Hader, and J. V. Moloney. “Gain and Carrier Losses of (GaIn)(NAs) Heterostructures
in the 1300–1550 Nm Range.” Applied Physics Letters 87, no. 26 (2005).
https://doi.org/10.1063/1.2149371.
ieee: 'C. Schlichenmaier et al., “Gain and carrier losses of (GaIn)(NAs)
heterostructures in the 1300–1550 nm range,” Applied Physics Letters, vol.
87, no. 26, Art. no. 261109, 2005, doi: 10.1063/1.2149371.'
mla: Schlichenmaier, C., et al. “Gain and Carrier Losses of (GaIn)(NAs) Heterostructures
in the 1300–1550 Nm Range.” Applied Physics Letters, vol. 87, no. 26, 261109,
2005, doi:10.1063/1.2149371.
short: C. Schlichenmaier, A. Thränhardt, T. Meier, S.W. Koch, W.W. Chow, J. Hader,
J.V. Moloney, Applied Physics Letters 87 (2005).
date_created: 2021-08-24T09:29:41Z
date_updated: 2023-04-24T06:00:23Z
department:
- _id: '15'
- _id: '170'
- _id: '293'
doi: 10.1063/1.2149371
extern: '1'
intvolume: ' 87'
issue: '26'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm
range
type: journal_article
user_id: '49063'
volume: 87
year: '2005'
...
---
_id: '43275'
author:
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: S.W.
full_name: Koch, S.W.
last_name: Koch
citation:
ama: 'Meier T, Koch SW. COHERENT TRANSIENTS | Foundations of Coherent Transients
in Semiconductors. In: Guenther B, Bayvel L, Steel DG, eds. Encyclopedia of
Modern Optics. Elsevier; 2005:163-173. doi:10.1016/B0-12-369395-0/00754-5'
apa: Meier, T., & Koch, S. W. (2005). COHERENT TRANSIENTS | Foundations of Coherent
Transients in Semiconductors. In B. Guenther, L. Bayvel, & D. G. Steel (Eds.),
Encyclopedia of Modern Optics (pp. 163–173). Elsevier. https://doi.org/10.1016/B0-12-369395-0/00754-5
bibtex: '@inbook{Meier_Koch_2005, title={COHERENT TRANSIENTS | Foundations of Coherent
Transients in Semiconductors}, DOI={10.1016/B0-12-369395-0/00754-5},
booktitle={Encyclopedia of Modern Optics}, publisher={Elsevier}, author={Meier,
Torsten and Koch, S.W.}, editor={Guenther, B. and Bayvel, L. and Steel, D.G.},
year={2005}, pages={163–173} }'
chicago: Meier, Torsten, and S.W. Koch. “COHERENT TRANSIENTS | Foundations of Coherent
Transients in Semiconductors.” In Encyclopedia of Modern Optics, edited
by B. Guenther, L. Bayvel, and D.G. Steel, 163–73. Elsevier, 2005. https://doi.org/10.1016/B0-12-369395-0/00754-5.
ieee: T. Meier and S. W. Koch, “COHERENT TRANSIENTS | Foundations of Coherent Transients
in Semiconductors,” in Encyclopedia of Modern Optics, B. Guenther, L. Bayvel,
and D. G. Steel, Eds. Elsevier, 2005, pp. 163–173.
mla: Meier, Torsten, and S. W. Koch. “COHERENT TRANSIENTS | Foundations of Coherent
Transients in Semiconductors.” Encyclopedia of Modern Optics, edited by
B. Guenther et al., Elsevier, 2005, pp. 163–73, doi:10.1016/B0-12-369395-0/00754-5.
short: 'T. Meier, S.W. Koch, in: B. Guenther, L. Bayvel, D.G. Steel (Eds.), Encyclopedia
of Modern Optics, Elsevier, 2005, pp. 163–173.'
date_created: 2023-04-01T23:28:01Z
date_updated: 2023-04-02T12:50:02Z
department:
- _id: '293'
doi: 10.1016/B0-12-369395-0/00754-5
editor:
- first_name: B.
full_name: Guenther, B.
last_name: Guenther
- first_name: L.
full_name: Bayvel, L.
last_name: Bayvel
- first_name: D.G.
full_name: Steel, D.G.
last_name: Steel
extern: '1'
language:
- iso: eng
main_file_link:
- url: https://www.sciencedirect.com/science/article/pii/B0123693950007545?via%3Dihub
page: 163-173
publication: Encyclopedia of Modern Optics
publication_status: published
publisher: Elsevier
status: public
title: COHERENT TRANSIENTS | Foundations of Coherent Transients in Semiconductors
type: book_chapter
user_id: '49063'
year: '2005'
...
---
_id: '44121'
abstract:
- lang: eng
text: Theory/experiment comparisons of optical properties of dilute nitride heterostructures
are presented. A type I - type II transition in In0.23Ga0.77As/GaNxAs1−x heterostructures
is identified. The model is used for a study of lasing in the 1.3-1.5μm range.
article_number: JTuC92
author:
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: C.
full_name: Schlichenmaier, C.
last_name: Schlichenmaier
- first_name: A.
full_name: Thränhardt, A.
last_name: Thränhardt
- first_name: H.
full_name: Grüning, H.
last_name: Grüning
- first_name: Peter J.
full_name: Klar, Peter J.
last_name: Klar
- first_name: Wolfram
full_name: Heimbrodt, Wolfram
last_name: Heimbrodt
- first_name: S.W.
full_name: Koch, S.W.
last_name: Koch
- first_name: Weng W.
full_name: Chow, Weng W.
last_name: Chow
- first_name: J.
full_name: Hader, J.
last_name: Hader
- first_name: Jerome V.
full_name: Moloney, Jerome V.
last_name: Moloney
citation:
ama: 'Meier T, Schlichenmaier C, Thränhardt A, et al. Analysis of dilute nitride
semiconductor laser gain materials in the 1.3-1.5/spl mu/m range. In: Quantum
Electronics and Laser Science Conference. Optical Society of America; 2005.'
apa: Meier, T., Schlichenmaier, C., Thränhardt, A., Grüning, H., Klar, P. J., Heimbrodt,
W., Koch, S. W., Chow, W. W., Hader, J., & Moloney, J. V. (2005). Analysis
of dilute nitride semiconductor laser gain materials in the 1.3-1.5/spl mu/m range.
Quantum Electronics and Laser Science Conference, Article JTuC92. Quantum
Electronics and Laser Science Conference 2005, Baltimore, Maryland United States.
bibtex: '@inproceedings{Meier_Schlichenmaier_Thränhardt_Grüning_Klar_Heimbrodt_Koch_Chow_Hader_Moloney_2005,
title={Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5/spl
mu/m range}, number={JTuC92}, booktitle={ Quantum Electronics and Laser Science
Conference}, publisher={Optical Society of America}, author={Meier, Torsten and
Schlichenmaier, C. and Thränhardt, A. and Grüning, H. and Klar, Peter J. and Heimbrodt,
Wolfram and Koch, S.W. and Chow, Weng W. and Hader, J. and Moloney, Jerome V.},
year={2005} }'
chicago: Meier, Torsten, C. Schlichenmaier, A. Thränhardt, H. Grüning, Peter J.
Klar, Wolfram Heimbrodt, S.W. Koch, Weng W. Chow, J. Hader, and Jerome V. Moloney.
“Analysis of Dilute Nitride Semiconductor Laser Gain Materials in the 1.3-1.5/Spl
Mu/m Range.” In Quantum Electronics and Laser Science Conference. Optical
Society of America, 2005.
ieee: T. Meier et al., “Analysis of dilute nitride semiconductor laser gain
materials in the 1.3-1.5/spl mu/m range,” presented at the Quantum Electronics
and Laser Science Conference 2005, Baltimore, Maryland United States, 2005.
mla: Meier, Torsten, et al. “Analysis of Dilute Nitride Semiconductor Laser Gain
Materials in the 1.3-1.5/Spl Mu/m Range.” Quantum Electronics and Laser Science
Conference, JTuC92, Optical Society of America, 2005.
short: 'T. Meier, C. Schlichenmaier, A. Thränhardt, H. Grüning, P.J. Klar, W. Heimbrodt,
S.W. Koch, W.W. Chow, J. Hader, J.V. Moloney, in: Quantum Electronics and Laser
Science Conference, Optical Society of America, 2005.'
conference:
end_date: 2005-05-27
location: Baltimore, Maryland United States
name: Quantum Electronics and Laser Science Conference 2005
start_date: 2005-05-22
date_created: 2023-04-24T06:11:47Z
date_updated: 2023-04-24T06:11:49Z
department:
- _id: '293'
extern: '1'
language:
- iso: eng
main_file_link:
- url: https://opg.optica.org/abstract.cfm?uri=qels-2005-JTuC92
publication: ' Quantum Electronics and Laser Science Conference'
publication_identifier:
isbn:
- 1-55752-770-9
publication_status: published
publisher: Optical Society of America
status: public
title: Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5/spl
mu/m range
type: conference
user_id: '49063'
year: '2005'
...
---
_id: '23501'
abstract:
- lang: eng
text: A set of (Ga0.77In0.23)As/Ga(NxAs1−x) heterostructures is studied by time-resolved
photoluminescence. Four samples with nitrogen concentrations from x=0.48% up to
x=2.2% are investigated at different temperatures and with different excitation
densities. The experiments suggest that the heterostructure band offset is type
I for x=0.48% and type II for x=2.2%. The situation is more complex for x=0.72%
and x=1.25%, since these samples are close to the transition from type I to type
II. The experimental findings are analyzed using a detailed microscopic theory.
Numerical calculations describe the measured data well. In particular, the interpretation
of the experimental results concerning the band alignment is confirmed by the
theoretical analysis.
article_number: '165320'
author:
- first_name: K.
full_name: Hantke, K.
last_name: Hantke
- first_name: J. D.
full_name: Heber, J. D.
last_name: Heber
- first_name: C.
full_name: Schlichenmaier, C.
last_name: Schlichenmaier
- first_name: A.
full_name: Thränhardt, A.
last_name: Thränhardt
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: B.
full_name: Kunert, B.
last_name: Kunert
- first_name: K.
full_name: Volz, K.
last_name: Volz
- first_name: W.
full_name: Stolz, W.
last_name: Stolz
- first_name: S. W.
full_name: Koch, S. W.
last_name: Koch
- first_name: W. W.
full_name: Rühle, W. W.
last_name: Rühle
citation:
ama: Hantke K, Heber JD, Schlichenmaier C, et al. Time-resolved photoluminescence
of type-I and type-II (GaIn) As/Ga (NAs) heterostructures. Physical Review
B. 2005;71(16). doi:10.1103/physrevb.71.165320
apa: Hantke, K., Heber, J. D., Schlichenmaier, C., Thränhardt, A., Meier, T., Kunert,
B., Volz, K., Stolz, W., Koch, S. W., & Rühle, W. W. (2005). Time-resolved
photoluminescence of type-I and type-II (GaIn) As/Ga (NAs) heterostructures.
Physical Review B, 71(16), Article 165320. https://doi.org/10.1103/physrevb.71.165320
bibtex: '@article{Hantke_Heber_Schlichenmaier_Thränhardt_Meier_Kunert_Volz_Stolz_Koch_Rühle_2005,
title={Time-resolved photoluminescence of type-I and type-II (GaIn) As/Ga (NAs)
heterostructures}, volume={71}, DOI={10.1103/physrevb.71.165320},
number={16165320}, journal={Physical Review B}, author={Hantke, K. and Heber,
J. D. and Schlichenmaier, C. and Thränhardt, A. and Meier, Torsten and Kunert,
B. and Volz, K. and Stolz, W. and Koch, S. W. and Rühle, W. W.}, year={2005} }'
chicago: Hantke, K., J. D. Heber, C. Schlichenmaier, A. Thränhardt, Torsten Meier,
B. Kunert, K. Volz, W. Stolz, S. W. Koch, and W. W. Rühle. “Time-Resolved Photoluminescence
of Type-I and Type-II (GaIn) As/Ga (NAs) Heterostructures.” Physical Review
B 71, no. 16 (2005). https://doi.org/10.1103/physrevb.71.165320.
ieee: 'K. Hantke et al., “Time-resolved photoluminescence of type-I and type-II
(GaIn) As/Ga (NAs) heterostructures,” Physical Review B, vol. 71, no.
16, Art. no. 165320, 2005, doi: 10.1103/physrevb.71.165320.'
mla: Hantke, K., et al. “Time-Resolved Photoluminescence of Type-I and Type-II
(GaIn) As/Ga (NAs) Heterostructures.” Physical Review B, vol. 71, no.
16, 165320, 2005, doi:10.1103/physrevb.71.165320.
short: K. Hantke, J.D. Heber, C. Schlichenmaier, A. Thränhardt, T. Meier, B. Kunert,
K. Volz, W. Stolz, S.W. Koch, W.W. Rühle, Physical Review B 71 (2005).
date_created: 2021-08-24T09:23:59Z
date_updated: 2023-04-24T06:13:15Z
department:
- _id: '15'
- _id: '170'
- _id: '293'
doi: 10.1103/physrevb.71.165320
extern: '1'
intvolume: ' 71'
issue: '16'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
status: public
title: Time-resolved photoluminescence of type-I and type-II (GaIn) As/Ga (NAs) heterostructures
type: journal_article
user_id: '49063'
volume: 71
year: '2005'
...