[{"article_number":"C1V89S1P041","issue":"1","volume":89,"type":"journal_article","publication":"AAPP | Atti della Accademia Peloritana dei Pericolanti","ddc":["530"],"oa":"1","user_id":"16199","keyword":["tet_topic_numerics","tet_topic_shg","tet_topic_meta"],"has_accepted_license":"1","doi":"10.1478/C1V89S1P041","abstract":[{"text":"A simulation environment for metallic nanostructures based on the Discontinuous Galerkin Time Domain method is presented. The model is used to compute the linear and nonlinear optical response of split ring resonators and to study physical mechanisms that contribute to second harmonic generation.","lang":"eng"}],"title":"Application of the discontinous Galerkin time domain method to the optics of metallic nanostructures","file":[{"date_created":"2018-08-22T10:17:27Z","file_id":"4045","access_level":"open_access","content_type":"application/pdf","file_size":258268,"file_name":"2011 Grynko,Förstner,Meier_Application of the discontinous Galerkin time domain method to the optics of metallic nanostructures.pdf","creator":"hclaudia","relation":"main_file","date_updated":"2018-09-04T19:11:52Z"}],"date_updated":"2025-12-16T11:21:11Z","file_date_updated":"2018-09-04T19:11:52Z","_id":"4044","publication_identifier":{"issn":["1825-1242"]},"year":"2011","language":[{"iso":"eng"}],"status":"public","date_created":"2018-08-22T10:18:44Z","department":[{"_id":"15"},{"_id":"293"},{"_id":"170"},{"_id":"230"},{"_id":"35"},{"_id":"34"},{"_id":"61"}],"citation":{"short":"Y. Grynko, J. Förstner, T. Meier, AAPP | Atti Della Accademia Peloritana Dei Pericolanti 89 (2011).","bibtex":"@article{Grynko_Förstner_Meier_2011, title={Application of the discontinous Galerkin time domain method to the optics of metallic nanostructures}, volume={89}, DOI={<a href=\"https://doi.org/10.1478/C1V89S1P041\">10.1478/C1V89S1P041</a>}, number={1C1V89S1P041}, journal={AAPP | Atti della Accademia Peloritana dei Pericolanti}, author={Grynko, Yevgen and Förstner, Jens and Meier, Torsten}, year={2011} }","mla":"Grynko, Yevgen, et al. “Application of the Discontinous Galerkin Time Domain Method to the Optics of Metallic Nanostructures.” <i>AAPP | Atti Della Accademia Peloritana Dei Pericolanti</i>, vol. 89, no. 1, C1V89S1P041, 2011, doi:<a href=\"https://doi.org/10.1478/C1V89S1P041\">10.1478/C1V89S1P041</a>.","ieee":"Y. Grynko, J. Förstner, and T. Meier, “Application of the discontinous Galerkin time domain method to the optics of metallic nanostructures,” <i>AAPP | Atti della Accademia Peloritana dei Pericolanti</i>, vol. 89, no. 1, Art. no. C1V89S1P041, 2011, doi: <a href=\"https://doi.org/10.1478/C1V89S1P041\">10.1478/C1V89S1P041</a>.","chicago":"Grynko, Yevgen, Jens Förstner, and Torsten Meier. “Application of the Discontinous Galerkin Time Domain Method to the Optics of Metallic Nanostructures.” <i>AAPP | Atti Della Accademia Peloritana Dei Pericolanti</i> 89, no. 1 (2011). <a href=\"https://doi.org/10.1478/C1V89S1P041\">https://doi.org/10.1478/C1V89S1P041</a>.","ama":"Grynko Y, Förstner J, Meier T. Application of the discontinous Galerkin time domain method to the optics of metallic nanostructures. <i>AAPP | Atti della Accademia Peloritana dei Pericolanti</i>. 2011;89(1). doi:<a href=\"https://doi.org/10.1478/C1V89S1P041\">10.1478/C1V89S1P041</a>","apa":"Grynko, Y., Förstner, J., &#38; Meier, T. (2011). Application of the discontinous Galerkin time domain method to the optics of metallic nanostructures. <i>AAPP | Atti Della Accademia Peloritana Dei Pericolanti</i>, <i>89</i>(1), Article C1V89S1P041. <a href=\"https://doi.org/10.1478/C1V89S1P041\">https://doi.org/10.1478/C1V89S1P041</a>"},"publication_status":"published","intvolume":"        89","urn":"40448","article_type":"original","author":[{"id":"26059","last_name":"Grynko","first_name":"Yevgen","full_name":"Grynko, Yevgen"},{"last_name":"Förstner","id":"158","full_name":"Förstner, Jens","first_name":"Jens","orcid":"0000-0001-7059-9862"},{"orcid":"0000-0001-8864-2072","last_name":"Meier","id":"344","first_name":"Torsten","full_name":"Meier, Torsten"}]},{"type":"journal_article","quality_controlled":"1","publication":"Physica Status Solidi B","ddc":["530"],"issue":"4","page":"887-891","volume":248,"abstract":[{"text":"We present a nonequilibrium ab initio method for calculating nonlinear and nonlocal optical effects in metallic slabs with a thickness of several nanometers. The numerical analysis is based on the full solution of the time‐dependent Kohn–Sham equations for a jellium system and allows to study the optical response of metal electrons subject to arbitrarily shaped intense light pulses. We find a strong localization of the generated second‐harmonic current in the surface regions of the slabs. ","lang":"eng"}],"doi":"10.1002/pssb.201001219","has_accepted_license":"1","title":"Simulation of the ultrafast nonlinear optical response of metal slabs","file":[{"date_updated":"2020-08-30T15:01:30Z","relation":"main_file","file_name":"2011 Wand,Schindlmayr,Meier,Förstner_Simulation of the ultrafast nonlinear optical response of metal slabs.pdf","content_type":"application/pdf","file_id":"4092","date_created":"2018-08-23T09:55:13Z","creator":"hclaudia","description":"© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim","file_size":739579,"access_level":"closed","title":"Simulation of the ultrafast optical response of metal slabs"}],"external_id":{"isi":["000288856300020"]},"keyword":["tet_topic_shg"],"user_id":"16199","language":[{"iso":"eng"}],"year":"2011","publication_identifier":{"issn":["0370-1972"],"eissn":["1521-3951"]},"status":"public","date_created":"2018-08-23T09:53:38Z","publisher":"Wiley-VCH","date_updated":"2025-12-16T11:26:04Z","_id":"4091","file_date_updated":"2020-08-30T15:01:30Z","isi":"1","intvolume":"       248","article_type":"original","author":[{"last_name":"Wand","full_name":"Wand, Mathias","first_name":"Mathias"},{"orcid":"0000-0002-4855-071X","id":"458","last_name":"Schindlmayr","first_name":"Arno","full_name":"Schindlmayr, Arno"},{"first_name":"Torsten","full_name":"Meier, Torsten","last_name":"Meier","id":"344","orcid":"0000-0001-8864-2072"},{"first_name":"Jens","full_name":"Förstner, Jens","id":"158","last_name":"Förstner","orcid":"0000-0001-7059-9862"}],"department":[{"_id":"293"},{"_id":"230"},{"_id":"296"},{"_id":"15"},{"_id":"170"},{"_id":"35"},{"_id":"34"},{"_id":"61"}],"citation":{"ieee":"M. Wand, A. Schindlmayr, T. Meier, and J. Förstner, “Simulation of the ultrafast nonlinear optical response of metal slabs,” <i>Physica Status Solidi B</i>, vol. 248, no. 4, pp. 887–891, 2011, doi: <a href=\"https://doi.org/10.1002/pssb.201001219\">10.1002/pssb.201001219</a>.","chicago":"Wand, Mathias, Arno Schindlmayr, Torsten Meier, and Jens Förstner. “Simulation of the Ultrafast Nonlinear Optical Response of Metal Slabs.” <i>Physica Status Solidi B</i> 248, no. 4 (2011): 887–91. <a href=\"https://doi.org/10.1002/pssb.201001219\">https://doi.org/10.1002/pssb.201001219</a>.","apa":"Wand, M., Schindlmayr, A., Meier, T., &#38; Förstner, J. (2011). Simulation of the ultrafast nonlinear optical response of metal slabs. <i>Physica Status Solidi B</i>, <i>248</i>(4), 887–891. <a href=\"https://doi.org/10.1002/pssb.201001219\">https://doi.org/10.1002/pssb.201001219</a>","ama":"Wand M, Schindlmayr A, Meier T, Förstner J. Simulation of the ultrafast nonlinear optical response of metal slabs. <i>Physica Status Solidi B</i>. 2011;248(4):887-891. doi:<a href=\"https://doi.org/10.1002/pssb.201001219\">10.1002/pssb.201001219</a>","short":"M. Wand, A. Schindlmayr, T. Meier, J. Förstner, Physica Status Solidi B 248 (2011) 887–891.","bibtex":"@article{Wand_Schindlmayr_Meier_Förstner_2011, title={Simulation of the ultrafast nonlinear optical response of metal slabs}, volume={248}, DOI={<a href=\"https://doi.org/10.1002/pssb.201001219\">10.1002/pssb.201001219</a>}, number={4}, journal={Physica Status Solidi B}, publisher={Wiley-VCH}, author={Wand, Mathias and Schindlmayr, Arno and Meier, Torsten and Förstner, Jens}, year={2011}, pages={887–891} }","mla":"Wand, Mathias, et al. “Simulation of the Ultrafast Nonlinear Optical Response of Metal Slabs.” <i>Physica Status Solidi B</i>, vol. 248, no. 4, Wiley-VCH, 2011, pp. 887–91, doi:<a href=\"https://doi.org/10.1002/pssb.201001219\">10.1002/pssb.201001219</a>."},"publication_status":"published"},{"department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"27"}],"publication_status":"published","citation":{"bibtex":"@article{Sanna_Berth_Hahn_Widhalm_Zrenner_Schmidt_2011, title={Localised Phonon Modes at LiNbO3(0001) Surfaces}, volume={419}, DOI={<a href=\"https://doi.org/10.1080/00150193.2011.594396\">10.1080/00150193.2011.594396</a>}, number={1}, journal={Ferroelectrics}, publisher={Informa UK Limited}, author={Sanna, S. and Berth, Gerhard and Hahn, W. and Widhalm, A. and Zrenner, Artur and Schmidt, Wolf Gero}, year={2011}, pages={1–8} }","mla":"Sanna, S., et al. “Localised Phonon Modes at LiNbO3(0001) Surfaces.” <i>Ferroelectrics</i>, vol. 419, no. 1, Informa UK Limited, 2011, pp. 1–8, doi:<a href=\"https://doi.org/10.1080/00150193.2011.594396\">10.1080/00150193.2011.594396</a>.","short":"S. Sanna, G. Berth, W. Hahn, A. Widhalm, A. Zrenner, W.G. Schmidt, Ferroelectrics 419 (2011) 1–8.","ama":"Sanna S, Berth G, Hahn W, Widhalm A, Zrenner A, Schmidt WG. Localised Phonon Modes at LiNbO3(0001) Surfaces. <i>Ferroelectrics</i>. 2011;419(1):1-8. doi:<a href=\"https://doi.org/10.1080/00150193.2011.594396\">10.1080/00150193.2011.594396</a>","apa":"Sanna, S., Berth, G., Hahn, W., Widhalm, A., Zrenner, A., &#38; Schmidt, W. G. (2011). Localised Phonon Modes at LiNbO3(0001) Surfaces. <i>Ferroelectrics</i>, <i>419</i>(1), 1–8. <a href=\"https://doi.org/10.1080/00150193.2011.594396\">https://doi.org/10.1080/00150193.2011.594396</a>","ieee":"S. Sanna, G. Berth, W. Hahn, A. Widhalm, A. Zrenner, and W. G. Schmidt, “Localised Phonon Modes at LiNbO3(0001) Surfaces,” <i>Ferroelectrics</i>, vol. 419, no. 1, pp. 1–8, 2011, doi: <a href=\"https://doi.org/10.1080/00150193.2011.594396\">10.1080/00150193.2011.594396</a>.","chicago":"Sanna, S., Gerhard Berth, W. Hahn, A. Widhalm, Artur Zrenner, and Wolf Gero Schmidt. “Localised Phonon Modes at LiNbO3(0001) Surfaces.” <i>Ferroelectrics</i> 419, no. 1 (2011): 1–8. <a href=\"https://doi.org/10.1080/00150193.2011.594396\">https://doi.org/10.1080/00150193.2011.594396</a>."},"intvolume":"       419","author":[{"full_name":"Sanna, S.","first_name":"S.","last_name":"Sanna"},{"full_name":"Berth, Gerhard","first_name":"Gerhard","last_name":"Berth","id":"53"},{"last_name":"Hahn","full_name":"Hahn, W.","first_name":"W."},{"full_name":"Widhalm, A.","first_name":"A.","last_name":"Widhalm"},{"orcid":"0000-0002-5190-0944","first_name":"Artur","full_name":"Zrenner, Artur","id":"606","last_name":"Zrenner"},{"full_name":"Schmidt, Wolf Gero","first_name":"Wolf Gero","id":"468","last_name":"Schmidt","orcid":"0000-0002-2717-5076"}],"article_type":"original","date_updated":"2025-12-16T11:29:20Z","_id":"4543","status":"public","year":"2011","publication_identifier":{"issn":["0015-0193","1563-5112"]},"language":[{"iso":"eng"}],"publisher":"Informa UK Limited","date_created":"2018-09-20T11:26:53Z","user_id":"16199","abstract":[{"lang":"eng","text":"The vibrational properties of the LiNbO3 (0001) surfaces have been investigated both from first principles and with Raman spectroscopy measurements. Firstly, the phonon modes of bulk and of the (0001) surface are calculated by means of the density functional theory. Our calculations reveal the existence of localised vibrational modes both at the positive and at the negative surface. The surface vibrations are found at energies above and within the bulk bands. Phonon modes localised at the positive and at the negative surface differ substantially. In a second step, the Raman spectra of LiNbO3 bulk and of the two surfaces have been measured. Raman spectroscopy is shown to be sensitive to differences between bulk and surface and between positive and negative surface. The calculated and measured frequencies are in agreement within the error of the method."}],"doi":"10.1080/00150193.2011.594396","project":[{"name":"PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"title":"Localised Phonon Modes at LiNbO3(0001) Surfaces","issue":"1","volume":419,"page":"1-8","type":"journal_article","publication":"Ferroelectrics"},{"editor":[{"first_name":"Kong-Thon","full_name":"Tsen, Kong-Thon","last_name":"Tsen"},{"first_name":"Jin-Joo","full_name":"Song, Jin-Joo","last_name":"Song"},{"last_name":"Betz","first_name":"Markus","full_name":"Betz, Markus"},{"last_name":"Elezzabi","full_name":"Elezzabi, Abdulhakem Y.","first_name":"Abdulhakem Y."}],"author":[{"full_name":"Duc, H. T.","first_name":"H. T.","last_name":"Duc"},{"last_name":"Pochwala","full_name":"Pochwala, M.","first_name":"M."},{"orcid":"0000-0001-7059-9862","full_name":"Förstner, Jens","first_name":"Jens","last_name":"Förstner","id":"158"},{"last_name":"Meier","id":"344","first_name":"Torsten","full_name":"Meier, Torsten","orcid":"0000-0001-8864-2072"},{"full_name":"Priyadarshi, S.","first_name":"S.","last_name":"Priyadarshi"},{"last_name":"Racu","first_name":"A. M.","full_name":"Racu, A. M."},{"first_name":"K.","full_name":"Pierz, K.","last_name":"Pierz"},{"last_name":"Siegner","first_name":"U.","full_name":"Siegner, U."},{"full_name":"Bieler, M.","first_name":"M.","last_name":"Bieler"}],"intvolume":"      7937","series_title":"SPIE Proceedings","citation":{"ama":"Duc HT, Pochwala M, Förstner J, et al. Injection currents in (110)-oriented GaAs/AlGaAs quantum wells: recent progress in theory and experiment. In: Tsen K-T, Song J-J, Betz M, Elezzabi AY, eds. <i>Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV</i>. Vol 7937. SPIE Proceedings. SPIE; 2011. doi:<a href=\"https://doi.org/10.1117/12.876972\">10.1117/12.876972</a>","apa":"Duc, H. T., Pochwala, M., Förstner, J., Meier, T., Priyadarshi, S., Racu, A. M., Pierz, K., Siegner, U., &#38; Bieler, M. (2011). Injection currents in (110)-oriented GaAs/AlGaAs quantum wells: recent progress in theory and experiment. In K.-T. Tsen, J.-J. Song, M. Betz, &#38; A. Y. Elezzabi (Eds.), <i>Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV</i> (No. 79370U; Vol. 7937). SPIE. <a href=\"https://doi.org/10.1117/12.876972\">https://doi.org/10.1117/12.876972</a>","chicago":"Duc, H. T., M. Pochwala, Jens Förstner, Torsten Meier, S. Priyadarshi, A. M. Racu, K. Pierz, U. Siegner, and M. Bieler. “Injection Currents in (110)-Oriented GaAs/AlGaAs Quantum Wells: Recent Progress in Theory and Experiment.” In <i>Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV</i>, edited by Kong-Thon Tsen, Jin-Joo Song, Markus Betz, and Abdulhakem Y. Elezzabi, Vol. 7937. SPIE Proceedings. SPIE, 2011. <a href=\"https://doi.org/10.1117/12.876972\">https://doi.org/10.1117/12.876972</a>.","ieee":"H. T. Duc <i>et al.</i>, “Injection currents in (110)-oriented GaAs/AlGaAs quantum wells: recent progress in theory and experiment,” in <i>Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV</i>, 2011, vol. 7937, doi: <a href=\"https://doi.org/10.1117/12.876972\">10.1117/12.876972</a>.","mla":"Duc, H. T., et al. “Injection Currents in (110)-Oriented GaAs/AlGaAs Quantum Wells: Recent Progress in Theory and Experiment.” <i>Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV</i>, edited by Kong-Thon Tsen et al., vol. 7937, 79370U, SPIE, 2011, doi:<a href=\"https://doi.org/10.1117/12.876972\">10.1117/12.876972</a>.","bibtex":"@inproceedings{Duc_Pochwala_Förstner_Meier_Priyadarshi_Racu_Pierz_Siegner_Bieler_2011, series={SPIE Proceedings}, title={Injection currents in (110)-oriented GaAs/AlGaAs quantum wells: recent progress in theory and experiment}, volume={7937}, DOI={<a href=\"https://doi.org/10.1117/12.876972\">10.1117/12.876972</a>}, number={79370U}, booktitle={Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV}, publisher={SPIE}, author={Duc, H. T. and Pochwala, M. and Förstner, Jens and Meier, Torsten and Priyadarshi, S. and Racu, A. M. and Pierz, K. and Siegner, U. and Bieler, M.}, editor={Tsen, Kong-Thon and Song, Jin-Joo and Betz, Markus and Elezzabi, Abdulhakem Y.}, year={2011}, collection={SPIE Proceedings} }","short":"H.T. Duc, M. Pochwala, J. Förstner, T. Meier, S. Priyadarshi, A.M. Racu, K. Pierz, U. Siegner, M. Bieler, in: K.-T. Tsen, J.-J. Song, M. Betz, A.Y. Elezzabi (Eds.), Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV, SPIE, 2011."},"publication_status":"published","department":[{"_id":"15"},{"_id":"293"},{"_id":"170"},{"_id":"230"},{"_id":"35"},{"_id":"34"},{"_id":"61"}],"date_created":"2018-08-27T09:32:36Z","publisher":"SPIE","year":"2011","language":[{"iso":"eng"}],"status":"public","_id":"4122","date_updated":"2025-12-16T11:36:39Z","title":"Injection currents in (110)-oriented GaAs/AlGaAs quantum wells: recent progress in theory and experiment","abstract":[{"text":"We experimentally and theoretically investigate injection currents generated by femtosecond single-color circularly-polarized laser pulses in (110)-oriented GaAs quantum wells. The current measurements are performed by detecting the emitted Terahertz radiation at room temperature. The microscopic theory is based on a 14 x 14 k • p band-structure calculation in combination with the multi-subband semiconductor Bloch equations. For symmetric GaAs quantum wells grown in (110) direction, an oscillatory dependence of the injection currents on the exciting photon energy is obtained. The results of the microscopic theory are in good agreement with the measurements. ","lang":"eng"}],"doi":"10.1117/12.876972","user_id":"16199","keyword":["tet_topic_qw"],"publication":"Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV","type":"conference","volume":7937,"article_number":"79370U"},{"intvolume":"        84","article_type":"original","urn":"40467","author":[{"last_name":"Hübner","full_name":"Hübner, J.","first_name":"J."},{"full_name":"Kunz, S.","first_name":"S.","last_name":"Kunz"},{"last_name":"Oertel","full_name":"Oertel, S.","first_name":"S."},{"last_name":"Schuh","full_name":"Schuh, D.","first_name":"D."},{"first_name":"M.","full_name":"Pochwała, M.","last_name":"Pochwała"},{"last_name":"Duc","full_name":"Duc, H. T.","first_name":"H. T."},{"full_name":"Förstner, Jens","first_name":"Jens","id":"158","last_name":"Förstner","orcid":"0000-0001-7059-9862"},{"orcid":"0000-0001-8864-2072","first_name":"Torsten","full_name":"Meier, Torsten","last_name":"Meier","id":"344"},{"last_name":"Oestreich","first_name":"M.","full_name":"Oestreich, M."}],"department":[{"_id":"15"},{"_id":"293"},{"_id":"170"},{"_id":"230"},{"_id":"35"},{"_id":"34"},{"_id":"61"}],"citation":{"ieee":"J. Hübner <i>et al.</i>, “Electron g-factor anisotropy in symmetric (110)-oriented GaAs quantum wells,” <i>Physical Review B</i>, vol. 84, no. 4, p. 041301(R), 2011, doi: <a href=\"https://doi.org/10.1103/physrevb.84.041301\">10.1103/physrevb.84.041301</a>.","chicago":"Hübner, J., S. Kunz, S. Oertel, D. Schuh, M. Pochwała, H. T. Duc, Jens Förstner, Torsten Meier, and M. Oestreich. “Electron G-Factor Anisotropy in Symmetric (110)-Oriented GaAs Quantum Wells.” <i>Physical Review B</i> 84, no. 4 (2011): 041301(R). <a href=\"https://doi.org/10.1103/physrevb.84.041301\">https://doi.org/10.1103/physrevb.84.041301</a>.","apa":"Hübner, J., Kunz, S., Oertel, S., Schuh, D., Pochwała, M., Duc, H. T., Förstner, J., Meier, T., &#38; Oestreich, M. (2011). Electron g-factor anisotropy in symmetric (110)-oriented GaAs quantum wells. <i>Physical Review B</i>, <i>84</i>(4), 041301(R). <a href=\"https://doi.org/10.1103/physrevb.84.041301\">https://doi.org/10.1103/physrevb.84.041301</a>","ama":"Hübner J, Kunz S, Oertel S, et al. Electron g-factor anisotropy in symmetric (110)-oriented GaAs quantum wells. <i>Physical Review B</i>. 2011;84(4):041301(R). doi:<a href=\"https://doi.org/10.1103/physrevb.84.041301\">10.1103/physrevb.84.041301</a>","short":"J. Hübner, S. Kunz, S. Oertel, D. Schuh, M. Pochwała, H.T. Duc, J. Förstner, T. Meier, M. Oestreich, Physical Review B 84 (2011) 041301(R).","bibtex":"@article{Hübner_Kunz_Oertel_Schuh_Pochwała_Duc_Förstner_Meier_Oestreich_2011, title={Electron g-factor anisotropy in symmetric (110)-oriented GaAs quantum wells}, volume={84}, DOI={<a href=\"https://doi.org/10.1103/physrevb.84.041301\">10.1103/physrevb.84.041301</a>}, number={4}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Hübner, J. and Kunz, S. and Oertel, S. and Schuh, D. and Pochwała, M. and Duc, H. T. and Förstner, Jens and Meier, Torsten and Oestreich, M.}, year={2011}, pages={041301(R)} }","mla":"Hübner, J., et al. “Electron G-Factor Anisotropy in Symmetric (110)-Oriented GaAs Quantum Wells.” <i>Physical Review B</i>, vol. 84, no. 4, American Physical Society (APS), 2011, p. 041301(R), doi:<a href=\"https://doi.org/10.1103/physrevb.84.041301\">10.1103/physrevb.84.041301</a>."},"publication_status":"published","year":"2011","publication_identifier":{"issn":["1098-0121","1550-235X"]},"language":[{"iso":"eng"}],"status":"public","date_created":"2018-08-22T10:20:23Z","publisher":"American Physical Society (APS)","date_updated":"2025-12-16T16:19:20Z","file_date_updated":"2018-09-04T19:28:55Z","_id":"4046","abstract":[{"text":"We demonstrate by spin quantum beat spectroscopy that in undoped symmetric (110)-oriented GaAs/AlGaAs\r\nsingle quantum wells, even a symmetric spatial envelope wave function gives rise to an asymmetric in-plane\r\nelectron Land´e g-factor. The anisotropy is neither a direct consequence of the asymmetric in-plane Dresselhaus\r\nsplitting nor a direct consequence of the asymmetric Zeeman splitting of the hole bands, but rather it is a pure\r\nhigher-order effect that exists as well for diamond-type lattices. The measurements for various well widths are\r\nvery well described within 14 × 14 band k·p theory and illustrate that the electron spin is an excellent meter\r\nvariable for mapping out the internal—otherwise hidden—symmetries in two-dimensional systems. Fourth-order\r\nperturbation theory yields an analytical expression for the strength of the g-factor anisotropy, providing a\r\nqualitative understanding of the observed effects.","lang":"eng"}],"has_accepted_license":"1","doi":"10.1103/physrevb.84.041301","title":"Electron g-factor anisotropy in symmetric (110)-oriented GaAs quantum wells","file":[{"relation":"main_file","date_updated":"2018-09-04T19:28:55Z","date_created":"2018-08-22T10:22:40Z","content_type":"application/pdf","file_id":"4047","access_level":"open_access","file_size":339595,"file_name":"2011 Hübner,Kunz,Örtel,Schuh,Pochwala,Duc,Förstner,Meier,Östreich_Electron g -factor anisotropy in symmetric (110)-oriented GaAs quantum wells.pdf","creator":"hclaudia"}],"user_id":"16199","oa":"1","keyword":["tet_topic_qw"],"type":"journal_article","publication":"Physical Review B","ddc":["530"],"issue":"4","page":"041301(R)","volume":84},{"intvolume":"         9","author":[{"orcid":"0000-0001-8864-2072","id":"344","last_name":"Meier","first_name":"Torsten","full_name":"Meier, Torsten"},{"id":"138","last_name":"Reichelt","full_name":"Reichelt, Matthias","first_name":"Matthias"},{"last_name":"Walther","first_name":"A.","full_name":"Walther, A."}],"department":[{"_id":"293"},{"_id":"35"},{"_id":"15"},{"_id":"170"},{"_id":"230"}],"citation":{"ieee":"T. Meier, M. Reichelt, and A. Walther, “Calculus-based optimization of the electron dynamics in nanostructures,” <i>Photonics and Nanostructures - Fundamentals and Applications</i>, vol. 9, no. 4, pp. 328–336, 2011, doi: <a href=\"https://doi.org/10.1016/j.photonics.2011.03.006\">10.1016/j.photonics.2011.03.006</a>.","short":"T. Meier, M. Reichelt, A. Walther, Photonics and Nanostructures - Fundamentals and Applications 9 (2011) 328–336.","chicago":"Meier, Torsten, Matthias Reichelt, and A. Walther. “Calculus-Based Optimization of the Electron Dynamics in Nanostructures.” <i>Photonics and Nanostructures - Fundamentals and Applications</i> 9, no. 4 (2011): 328–36. <a href=\"https://doi.org/10.1016/j.photonics.2011.03.006\">https://doi.org/10.1016/j.photonics.2011.03.006</a>.","ama":"Meier T, Reichelt M, Walther A. Calculus-based optimization of the electron dynamics in nanostructures. <i>Photonics and Nanostructures - Fundamentals and Applications</i>. 2011;9(4):328-336. doi:<a href=\"https://doi.org/10.1016/j.photonics.2011.03.006\">10.1016/j.photonics.2011.03.006</a>","bibtex":"@article{Meier_Reichelt_Walther_2011, title={Calculus-based optimization of the electron dynamics in nanostructures}, volume={9}, DOI={<a href=\"https://doi.org/10.1016/j.photonics.2011.03.006\">10.1016/j.photonics.2011.03.006</a>}, number={4}, journal={Photonics and Nanostructures - Fundamentals and Applications}, publisher={Elsevier}, author={Meier, Torsten and Reichelt, Matthias and Walther, A.}, year={2011}, pages={328–336} }","apa":"Meier, T., Reichelt, M., &#38; Walther, A. (2011). Calculus-based optimization of the electron dynamics in nanostructures. <i>Photonics and Nanostructures - Fundamentals and Applications</i>, <i>9</i>(4), 328–336. <a href=\"https://doi.org/10.1016/j.photonics.2011.03.006\">https://doi.org/10.1016/j.photonics.2011.03.006</a>","mla":"Meier, Torsten, et al. “Calculus-Based Optimization of the Electron Dynamics in Nanostructures.” <i>Photonics and Nanostructures - Fundamentals and Applications</i>, vol. 9, no. 4, Elsevier, 2011, pp. 328–36, doi:<a href=\"https://doi.org/10.1016/j.photonics.2011.03.006\">10.1016/j.photonics.2011.03.006</a>."},"publication_status":"published","language":[{"iso":"eng"}],"year":"2011","status":"public","date_created":"2023-03-29T21:25:40Z","publisher":"Elsevier","date_updated":"2025-12-16T16:49:08Z","_id":"43202","doi":"10.1016/j.photonics.2011.03.006","abstract":[{"text":"For numerous applications, the computation and provision of exact derivative information plays an important role for optimizing the considered system. This paper introduces the technique of algorithmic differentiation, a method to compute derivatives of arbitrary order within working precision. This derivative information will be combined with a calculus-based optimization algorithm to optimize a non-trivially shaped laser pulse which coherently steers the electron dynamics in a semiconductor quantum wire. Numerical results illustrating the cost for the derivative computation and the optimization process are presented and discussed.","lang":"eng"}],"title":"Calculus-based optimization of the electron dynamics in nanostructures","user_id":"16199","type":"journal_article","publication":"Photonics and Nanostructures - Fundamentals and Applications","issue":"4","page":"328-336","volume":9},{"volume":1,"page":"579-591","publication":"Dynamics at Solid State Surfaces and Interfaces","type":"book_chapter","user_id":"49063","main_file_link":[{"url":"https://onlinelibrary.wiley.com/doi/10.1002/9783527633418.ch24"}],"title":"Coherently controlled electrical currents at surfaces","doi":"10.1002/9783527633418.ch24","_id":"43260","date_updated":"2023-04-01T21:31:08Z","publisher":"Wiley‐VCH Verlag","date_created":"2023-04-01T21:30:57Z","status":"public","year":"2010","language":[{"iso":"eng"}],"publication_status":"published","series_title":"Current Developments","citation":{"mla":"Güdde, J., et al. “Coherently Controlled Electrical Currents at Surfaces.” <i>Dynamics at Solid State Surfaces and Interfaces</i>, edited by U. Bovensiepen et al., vol. 1, Wiley‐VCH Verlag, 2010, pp. 579–91, doi:<a href=\"https://doi.org/10.1002/9783527633418.ch24\">10.1002/9783527633418.ch24</a>.","apa":"Güdde, J., Rohleder, M., Meier, T., Koch, S. W., &#38; Höfer, U. (2010). Coherently controlled electrical currents at surfaces. In U. Bovensiepen, H. Petek, &#38; M. Wolf (Eds.), <i>Dynamics at Solid State Surfaces and Interfaces</i> (Vol. 1, pp. 579–591). Wiley‐VCH Verlag. <a href=\"https://doi.org/10.1002/9783527633418.ch24\">https://doi.org/10.1002/9783527633418.ch24</a>","bibtex":"@inbook{Güdde_Rohleder_Meier_Koch_Höfer_2010, place={Weinheim}, series={Current Developments}, title={Coherently controlled electrical currents at surfaces}, volume={1}, DOI={<a href=\"https://doi.org/10.1002/9783527633418.ch24\">10.1002/9783527633418.ch24</a>}, booktitle={Dynamics at Solid State Surfaces and Interfaces}, publisher={Wiley‐VCH Verlag}, author={Güdde, J. and Rohleder, M. and Meier, Torsten and Koch, S.W. and Höfer, U.}, editor={Bovensiepen, U. and Petek, H. and Wolf, M.}, year={2010}, pages={579–591}, collection={Current Developments} }","ama":"Güdde J, Rohleder M, Meier T, Koch SW, Höfer U. Coherently controlled electrical currents at surfaces. In: Bovensiepen U, Petek H, Wolf M, eds. <i>Dynamics at Solid State Surfaces and Interfaces</i>. Vol 1. Current Developments. Wiley‐VCH Verlag; 2010:579-591. doi:<a href=\"https://doi.org/10.1002/9783527633418.ch24\">10.1002/9783527633418.ch24</a>","chicago":"Güdde, J., M. Rohleder, Torsten Meier, S.W. Koch, and U. Höfer. “Coherently Controlled Electrical Currents at Surfaces.” In <i>Dynamics at Solid State Surfaces and Interfaces</i>, edited by U. Bovensiepen, H. Petek, and M. Wolf, 1:579–91. Current Developments. Weinheim: Wiley‐VCH Verlag, 2010. <a href=\"https://doi.org/10.1002/9783527633418.ch24\">https://doi.org/10.1002/9783527633418.ch24</a>.","short":"J. Güdde, M. Rohleder, T. Meier, S.W. Koch, U. Höfer, in: U. Bovensiepen, H. Petek, M. Wolf (Eds.), Dynamics at Solid State Surfaces and Interfaces, Wiley‐VCH Verlag, Weinheim, 2010, pp. 579–591.","ieee":"J. Güdde, M. Rohleder, T. Meier, S. W. Koch, and U. Höfer, “Coherently controlled electrical currents at surfaces,” in <i>Dynamics at Solid State Surfaces and Interfaces</i>, vol. 1, U. Bovensiepen, H. Petek, and M. Wolf, Eds. Weinheim: Wiley‐VCH Verlag, 2010, pp. 579–591."},"department":[{"_id":"293"}],"author":[{"last_name":"Güdde","full_name":"Güdde, J.","first_name":"J."},{"first_name":"M.","full_name":"Rohleder, M.","last_name":"Rohleder"},{"full_name":"Meier, Torsten","first_name":"Torsten","id":"344","last_name":"Meier","orcid":"0000-0001-8864-2072"},{"first_name":"S.W.","full_name":"Koch, S.W.","last_name":"Koch"},{"last_name":"Höfer","first_name":"U.","full_name":"Höfer, U."}],"editor":[{"last_name":"Bovensiepen","full_name":"Bovensiepen, U.","first_name":"U."},{"full_name":"Petek, H.","first_name":"H.","last_name":"Petek"},{"first_name":"M.","full_name":"Wolf, M.","last_name":"Wolf"}],"intvolume":"         1","place":"Weinheim"},{"publication":"Physical Review B","ddc":["530"],"type":"journal_article","volume":82,"issue":"11","article_number":"115316","file":[{"file_size":639662,"file_name":"2010 Duc,Förstner,Meier_Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells.pdf","creator":"hclaudia","date_created":"2018-08-27T10:27:00Z","access_level":"closed","file_id":"4128","content_type":"application/pdf","relation":"main_file","date_updated":"2018-08-27T10:27:00Z","success":1}],"title":"Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells","doi":"10.1103/physrevb.82.115316","has_accepted_license":"1","abstract":[{"text":"The dynamics of charge and spin injection currents excited by circularly polarized, one-color laser beams in\r\nsemiconductor quantum wells is analyzed. Our microscopic approach is based on a 14x14 k · p band-structure\r\ntheory in combination with multisubband semiconductor Bloch equations which allows a detailed analysis of\r\nthe photogenerated carrier distributions and coherences in k space. Charge and spin injection currents are\r\nnumerically calculated for [110]- and [001]-grown GaAs quantum wells including dc population contributions\r\nand ac contributions that arise from intersubband coherences. The dependencies of the injection currents on the\r\nexcitation conditions, in particular, the photon energy are computed and discussed.","lang":"eng"}],"user_id":"49063","keyword":["tet_topic_qw"],"publisher":"American Physical Society (APS)","date_created":"2018-08-27T10:25:36Z","status":"public","publication_identifier":{"issn":["1098-0121","1550-235X"]},"year":"2010","language":[{"iso":"eng"}],"_id":"4127","file_date_updated":"2018-08-27T10:27:00Z","date_updated":"2023-04-19T11:11:47Z","author":[{"full_name":"Duc, Huynh Thanh","first_name":"Huynh Thanh","last_name":"Duc"},{"first_name":"Jens","full_name":"Förstner, Jens","last_name":"Förstner","id":"158","orcid":"0000-0001-7059-9862"},{"orcid":"0000-0001-8864-2072","last_name":"Meier","id":"344","full_name":"Meier, Torsten","first_name":"Torsten"}],"article_type":"original","intvolume":"        82","publication_status":"published","citation":{"mla":"Duc, Huynh Thanh, et al. “Microscopic Analysis of Charge and Spin Photocurrents Injected by Circularly Polarized One-Color Laser Pulses in GaAs Quantum Wells.” <i>Physical Review B</i>, vol. 82, no. 11, 115316, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.82.115316\">10.1103/physrevb.82.115316</a>.","ama":"Duc HT, Förstner J, Meier T. Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells. <i>Physical Review B</i>. 2010;82(11). doi:<a href=\"https://doi.org/10.1103/physrevb.82.115316\">10.1103/physrevb.82.115316</a>","bibtex":"@article{Duc_Förstner_Meier_2010, title={Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells}, volume={82}, DOI={<a href=\"https://doi.org/10.1103/physrevb.82.115316\">10.1103/physrevb.82.115316</a>}, number={11115316}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Duc, Huynh Thanh and Förstner, Jens and Meier, Torsten}, year={2010} }","apa":"Duc, H. T., Förstner, J., &#38; Meier, T. (2010). Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells. <i>Physical Review B</i>, <i>82</i>(11), Article 115316. <a href=\"https://doi.org/10.1103/physrevb.82.115316\">https://doi.org/10.1103/physrevb.82.115316</a>","short":"H.T. Duc, J. Förstner, T. Meier, Physical Review B 82 (2010).","chicago":"Duc, Huynh Thanh, Jens Förstner, and Torsten Meier. “Microscopic Analysis of Charge and Spin Photocurrents Injected by Circularly Polarized One-Color Laser Pulses in GaAs Quantum Wells.” <i>Physical Review B</i> 82, no. 11 (2010). <a href=\"https://doi.org/10.1103/physrevb.82.115316\">https://doi.org/10.1103/physrevb.82.115316</a>.","ieee":"H. T. Duc, J. Förstner, and T. Meier, “Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells,” <i>Physical Review B</i>, vol. 82, no. 11, Art. no. 115316, 2010, doi: <a href=\"https://doi.org/10.1103/physrevb.82.115316\">10.1103/physrevb.82.115316</a>."},"department":[{"_id":"15"},{"_id":"230"},{"_id":"293"},{"_id":"170"}]},{"language":[{"iso":"eng"}],"year":"2010","type":"conference","status":"public","date_created":"2023-04-01T21:37:05Z","publication":"Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV","publisher":"SPIE","article_number":"76001K","date_updated":"2023-04-19T11:10:38Z","_id":"43261","volume":7600,"abstract":[{"text":"We report the development of an experimental technique to measure the dynamics of electrical currents on the femtosecond timescale. The technique combines methods of coherent control with time- and angle-resolved photoelectron spectroscopy. Direct snapshots of the momentum distribution of the excited electrons as function of time are then determined by photoelectron spectroscopy. In this way we gain information on the generation and decay of ultrashort current pulses in unprecedented detail. In particular, this technique allows the observation of elastic electron scattering in terms of an incoherent population dynamics in momentum space. We have applied this optical current generation and detection scheme to electrons in so-called image-potential states which represent a prototype of two-dimensional electronic surface states. Electrons in these states are bound perpendicular to the metal surface by the Coulombic image potential whereas they can move almost freely parallel to the surface. For the (n=1) image-potential state of Cu(100) we find a decay time of 10 fs due to electron scattering with steps and surface defects.","lang":"eng"}],"intvolume":"      7600","doi":"10.1117/12.839672","title":"Ultrafast coherent control of electric currents at metal surfaces","editor":[{"first_name":"Jin-Joo","full_name":"Song, Jin-Joo","last_name":"Song"},{"last_name":"Tsen","first_name":"Kong-Thon","full_name":"Tsen, Kong-Thon"},{"full_name":"Betz, Markus","first_name":"Markus","last_name":"Betz"},{"first_name":"Abdulhakem","full_name":"Y. Elezzabi, Abdulhakem","last_name":"Y. Elezzabi"}],"author":[{"first_name":"J.","full_name":"Güdde, J.","last_name":"Güdde"},{"full_name":"Rohleder, M.","first_name":"M.","last_name":"Rohleder"},{"id":"344","last_name":"Meier","first_name":"Torsten","full_name":"Meier, Torsten","orcid":"0000-0001-8864-2072"},{"last_name":"Koch","first_name":"S.W.","full_name":"Koch, S.W."},{"full_name":"Höfer, U.","first_name":"U.","last_name":"Höfer"}],"department":[{"_id":"293"}],"citation":{"ieee":"J. Güdde, M. Rohleder, T. Meier, S. W. Koch, and U. Höfer, “Ultrafast coherent control of electric currents at metal surfaces,” in <i>Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV</i>, 2010, vol. 7600, doi: <a href=\"https://doi.org/10.1117/12.839672\">10.1117/12.839672</a>.","chicago":"Güdde, J., M. Rohleder, Torsten Meier, S.W. Koch, and U. Höfer. “Ultrafast Coherent Control of Electric Currents at Metal Surfaces.” In <i>Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV</i>, edited by Jin-Joo Song, Kong-Thon Tsen, Markus Betz, and Abdulhakem Y. Elezzabi, Vol. 7600. SPIE Proceedings. SPIE, 2010. <a href=\"https://doi.org/10.1117/12.839672\">https://doi.org/10.1117/12.839672</a>.","ama":"Güdde J, Rohleder M, Meier T, Koch SW, Höfer U. Ultrafast coherent control of electric currents at metal surfaces. In: Song J-J, Tsen K-T, Betz M, Y. Elezzabi A, eds. <i>Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV</i>. Vol 7600. SPIE Proceedings. SPIE; 2010. doi:<a href=\"https://doi.org/10.1117/12.839672\">10.1117/12.839672</a>","apa":"Güdde, J., Rohleder, M., Meier, T., Koch, S. W., &#38; Höfer, U. (2010). Ultrafast coherent control of electric currents at metal surfaces. In J.-J. Song, K.-T. Tsen, M. Betz, &#38; A. Y. Elezzabi (Eds.), <i>Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV</i> (No. 76001K; Vol. 7600). SPIE. <a href=\"https://doi.org/10.1117/12.839672\">https://doi.org/10.1117/12.839672</a>","short":"J. Güdde, M. Rohleder, T. Meier, S.W. Koch, U. Höfer, in: J.-J. Song, K.-T. Tsen, M. Betz, A. Y. Elezzabi (Eds.), Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV, SPIE, 2010.","bibtex":"@inproceedings{Güdde_Rohleder_Meier_Koch_Höfer_2010, series={SPIE Proceedings}, title={Ultrafast coherent control of electric currents at metal surfaces}, volume={7600}, DOI={<a href=\"https://doi.org/10.1117/12.839672\">10.1117/12.839672</a>}, number={76001K}, booktitle={Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV}, publisher={SPIE}, author={Güdde, J. and Rohleder, M. and Meier, Torsten and Koch, S.W. and Höfer, U.}, editor={Song, Jin-Joo and Tsen, Kong-Thon and Betz, Markus and Y. Elezzabi, Abdulhakem}, year={2010}, collection={SPIE Proceedings} }","mla":"Güdde, J., et al. “Ultrafast Coherent Control of Electric Currents at Metal Surfaces.” <i>Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV</i>, edited by Jin-Joo Song et al., vol. 7600, 76001K, SPIE, 2010, doi:<a href=\"https://doi.org/10.1117/12.839672\">10.1117/12.839672</a>."},"series_title":"SPIE Proceedings","publication_status":"published","main_file_link":[{"url":"https://spie.org/Publications/Proceedings/Paper/10.1117/12.839672"}],"user_id":"49063"},{"department":[{"_id":"15"},{"_id":"293"},{"_id":"170"},{"_id":"230"}],"citation":{"short":"H.T. Duc, J. Förstner, T. Meier, in: J.-J. Song, K.-T. Tsen, M. Betz, A.Y. Elezzabi (Eds.), Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV, SPIE, 2010, pp. 76000S-76000S–9.","mla":"Duc, Huynh Thanh, et al. “Microscopic Theoretical Analysis of Optically Generated Injection Currents in Semiconductor Quantum Wells.” <i>Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV</i>, edited by Jin-Joo Song et al., vol. 7600, SPIE, 2010, pp. 76000S-76000S – 9, doi:<a href=\"https://doi.org/10.1117/12.840388\">10.1117/12.840388</a>.","bibtex":"@inproceedings{Duc_Förstner_Meier_2010, series={SPIE Proceedings}, title={Microscopic theoretical analysis of optically generated injection currents in semiconductor quantum wells}, volume={7600}, DOI={<a href=\"https://doi.org/10.1117/12.840388\">10.1117/12.840388</a>}, booktitle={Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV}, publisher={SPIE}, author={Duc, Huynh Thanh and Förstner, Jens and Meier, Torsten}, editor={Song, Jin-Joo and Tsen, Kong-Thon and Betz, Markus and Elezzabi, Abdulhakem Y.}, year={2010}, pages={76000S-76000S–9}, collection={SPIE Proceedings} }","chicago":"Duc, Huynh Thanh, Jens Förstner, and Torsten Meier. “Microscopic Theoretical Analysis of Optically Generated Injection Currents in Semiconductor Quantum Wells.” In <i>Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV</i>, edited by Jin-Joo Song, Kong-Thon Tsen, Markus Betz, and Abdulhakem Y. Elezzabi, 7600:76000S-76000S – 9. SPIE Proceedings. SPIE, 2010. <a href=\"https://doi.org/10.1117/12.840388\">https://doi.org/10.1117/12.840388</a>.","ieee":"H. T. Duc, J. Förstner, and T. Meier, “Microscopic theoretical analysis of optically generated injection currents in semiconductor quantum wells,” in <i>Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV</i>, 2010, vol. 7600, pp. 76000S-76000S–9, doi: <a href=\"https://doi.org/10.1117/12.840388\">10.1117/12.840388</a>.","ama":"Duc HT, Förstner J, Meier T. Microscopic theoretical analysis of optically generated injection currents in semiconductor quantum wells. In: Song J-J, Tsen K-T, Betz M, Elezzabi AY, eds. <i>Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV</i>. Vol 7600. SPIE Proceedings. SPIE; 2010:76000S-76000S - 9. doi:<a href=\"https://doi.org/10.1117/12.840388\">10.1117/12.840388</a>","apa":"Duc, H. T., Förstner, J., &#38; Meier, T. (2010). Microscopic theoretical analysis of optically generated injection currents in semiconductor quantum wells. In J.-J. Song, K.-T. Tsen, M. Betz, &#38; A. Y. Elezzabi (Eds.), <i>Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV</i> (Vol. 7600, pp. 76000S-76000S – 9). SPIE. <a href=\"https://doi.org/10.1117/12.840388\">https://doi.org/10.1117/12.840388</a>"},"series_title":"SPIE Proceedings","publication_status":"published","intvolume":"      7600","author":[{"last_name":"Duc","full_name":"Duc, Huynh Thanh","first_name":"Huynh Thanh"},{"orcid":"0000-0001-7059-9862","full_name":"Förstner, Jens","first_name":"Jens","id":"158","last_name":"Förstner"},{"orcid":"0000-0001-8864-2072","last_name":"Meier","id":"344","first_name":"Torsten","full_name":"Meier, Torsten"}],"editor":[{"last_name":"Song","full_name":"Song, Jin-Joo","first_name":"Jin-Joo"},{"first_name":"Kong-Thon","full_name":"Tsen, Kong-Thon","last_name":"Tsen"},{"last_name":"Betz","full_name":"Betz, Markus","first_name":"Markus"},{"last_name":"Elezzabi","first_name":"Abdulhakem Y.","full_name":"Elezzabi, Abdulhakem Y."}],"date_updated":"2023-04-19T11:07:47Z","_id":"4176","language":[{"iso":"eng"}],"year":"2010","status":"public","date_created":"2018-08-28T09:00:53Z","publisher":"SPIE","keyword":["tet_topic_qw"],"user_id":"49063","abstract":[{"text":"A microscopic theory that describes injection currents in GaAs quantum wells is presented. 14 × 14 band k.p theory is used to compute the band structure including anisotropy and spin-orbit interaction. Transient injection currents are obtained via numerical solutions of the semiconductor Bloch equations. Depending on the growth direction of the considered quantum well system and the propagation and polarization directions of the incident light beam, it is possible to generate charge and/or spin photocurrents on ultrashort time scales. The dependence of the photocurrents on the excitation conditions is computed and discussed.","lang":"eng"}],"doi":"10.1117/12.840388","title":"Microscopic theoretical analysis of optically generated injection currents in semiconductor quantum wells","page":"76000S-76000S-9","volume":7600,"type":"conference","publication":"Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV"},{"date_updated":"2023-04-19T10:57:12Z","issue":"46 ","article_number":"46-48","volume":1291,"_id":"44063","status":"public","type":"journal_article","year":"2010","language":[{"iso":"eng"}],"publisher":"American Institute of Physics","publication":"AIP Conference Proceedings","date_created":"2023-04-19T10:57:09Z","department":[{"_id":"293"}],"user_id":"49063","publication_status":"published","main_file_link":[{"url":"https://aip.scitation.org/doi/abs/10.1063/1.3506125"}],"citation":{"ieee":"T. Meier, S. Declair, and J. Förstner, “Numerical Analysis of Coupled Photonic Crystal Cavities,” <i>AIP Conference Proceedings</i>, vol. 1291, no. 46, Art. no. 46–48, 2010, doi: <a href=\"https://doi.org/10.1063/1.3506125\">10.1063/1.3506125</a>.","short":"T. Meier, S. Declair, J. Förstner, AIP Conference Proceedings 1291 (2010).","chicago":"Meier, Torsten, S. Declair, and J. Förstner. “Numerical Analysis of Coupled Photonic Crystal Cavities.” <i>AIP Conference Proceedings</i> 1291, no. 46 (2010). <a href=\"https://doi.org/10.1063/1.3506125\">https://doi.org/10.1063/1.3506125</a>.","ama":"Meier T, Declair S, Förstner J. Numerical Analysis of Coupled Photonic Crystal Cavities. <i>AIP Conference Proceedings</i>. 2010;1291(46). doi:<a href=\"https://doi.org/10.1063/1.3506125\">10.1063/1.3506125</a>","bibtex":"@article{Meier_Declair_Förstner_2010, title={Numerical Analysis of Coupled Photonic Crystal Cavities}, volume={1291}, DOI={<a href=\"https://doi.org/10.1063/1.3506125\">10.1063/1.3506125</a>}, number={4646–48}, journal={AIP Conference Proceedings}, publisher={American Institute of Physics}, author={Meier, Torsten and Declair, S. and Förstner, J.}, year={2010} }","apa":"Meier, T., Declair, S., &#38; Förstner, J. (2010). Numerical Analysis of Coupled Photonic Crystal Cavities. <i>AIP Conference Proceedings</i>, <i>1291</i>(46), Article 46–48. <a href=\"https://doi.org/10.1063/1.3506125\">https://doi.org/10.1063/1.3506125</a>","mla":"Meier, Torsten, et al. “Numerical Analysis of Coupled Photonic Crystal Cavities.” <i>AIP Conference Proceedings</i>, vol. 1291, no. 46, 46–48, American Institute of Physics, 2010, doi:<a href=\"https://doi.org/10.1063/1.3506125\">10.1063/1.3506125</a>."},"intvolume":"      1291","doi":"10.1063/1.3506125","abstract":[{"text":"We present an analysis of the coupling between photonic crystal cavities in different geometries. Inline‐, side‐ and angle‐coupled L3‐geometries are investigated numerically in three dimensions. Asymmetric mode splitting of the fundamental mode for the L3‐cavity is shown for all geometrical setups evidencing for strong cavity‐cavity interactions. The coupling efficiency for the fundamental mode is shown to be best for a 30° angle between the cavity‐centers due to the direction of in‐plane leackage out of the cavites.","lang":"eng"}],"author":[{"orcid":"0000-0001-8864-2072","first_name":"Torsten","full_name":"Meier, Torsten","id":"344","last_name":"Meier"},{"last_name":"Declair","first_name":"S.","full_name":"Declair, S."},{"full_name":"Förstner, J.","first_name":"J.","last_name":"Förstner"}],"title":"Numerical Analysis of Coupled Photonic Crystal Cavities"},{"issue":"12","page":"905-909","volume":18,"type":"journal_article","publication":"Annalen der Physik","user_id":"49063","abstract":[{"lang":"eng","text":"We discuss transport and localization properties on the insulating side of the disorder dominated superconductor-insulator transition, described in terms of the dirty boson model. Analyzing the spectral properties of the interacting bosons in the absence of phonons, we argue that the Bose glass phase admits three distinct regimes. For strongest disorder the boson system is a fully localized, perfect insulator at any temperature. At smaller disorder, only the low temperature phase exhibits perfect insulation while delocalization takes place above a finite temperature. We argue that a third phase must intervene between these perfect insulators and the superconductor. This conducting Bose glass phase is characterized by a mobility edge in the many body spectrum, located at finite energy above the ground state. In this insulating regime purely electronically activated transport occurs, with a conductivity following an Arrhenius law at asymptotically low temperatures, while a tendency to superactivation is predicted at higher T. These predictions are in good agreement with recent transport experiments in highly disordered films of superconducting materials."}],"doi":"10.1002/andp.20095211219","title":"Localization of excitons in weakly disordered semiconductor structures: A model study","date_updated":"2023-04-19T11:13:00Z","_id":"24980","year":"2010","publication_identifier":{"issn":["0003-3804","1521-3889"]},"language":[{"iso":"eng"}],"status":"public","date_created":"2021-09-24T08:06:30Z","department":[{"_id":"15"},{"_id":"170"},{"_id":"293"},{"_id":"230"}],"citation":{"short":"N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, I. Varga, Annalen Der Physik 18 (2010) 905–909.","bibtex":"@article{Gögh_Thomas_Kuznetsova_Meier_Varga_2010, title={Localization of excitons in weakly disordered semiconductor structures: A model study}, volume={18}, DOI={<a href=\"https://doi.org/10.1002/andp.20095211219\">10.1002/andp.20095211219</a>}, number={12}, journal={Annalen der Physik}, author={Gögh, N. and Thomas, P. and Kuznetsova, I. and Meier, Torsten and Varga, I.}, year={2010}, pages={905–909} }","mla":"Gögh, N., et al. “Localization of Excitons in Weakly Disordered Semiconductor Structures: A Model Study.” <i>Annalen Der Physik</i>, vol. 18, no. 12, 2010, pp. 905–09, doi:<a href=\"https://doi.org/10.1002/andp.20095211219\">10.1002/andp.20095211219</a>.","ieee":"N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, and I. Varga, “Localization of excitons in weakly disordered semiconductor structures: A model study,” <i>Annalen der Physik</i>, vol. 18, no. 12, pp. 905–909, 2010, doi: <a href=\"https://doi.org/10.1002/andp.20095211219\">10.1002/andp.20095211219</a>.","chicago":"Gögh, N., P. Thomas, I. Kuznetsova, Torsten Meier, and I. Varga. “Localization of Excitons in Weakly Disordered Semiconductor Structures: A Model Study.” <i>Annalen Der Physik</i> 18, no. 12 (2010): 905–9. <a href=\"https://doi.org/10.1002/andp.20095211219\">https://doi.org/10.1002/andp.20095211219</a>.","apa":"Gögh, N., Thomas, P., Kuznetsova, I., Meier, T., &#38; Varga, I. (2010). Localization of excitons in weakly disordered semiconductor structures: A model study. <i>Annalen Der Physik</i>, <i>18</i>(12), 905–909. <a href=\"https://doi.org/10.1002/andp.20095211219\">https://doi.org/10.1002/andp.20095211219</a>","ama":"Gögh N, Thomas P, Kuznetsova I, Meier T, Varga I. Localization of excitons in weakly disordered semiconductor structures: A model study. <i>Annalen der Physik</i>. 2010;18(12):905-909. doi:<a href=\"https://doi.org/10.1002/andp.20095211219\">10.1002/andp.20095211219</a>"},"publication_status":"published","intvolume":"        18","author":[{"full_name":"Gögh, N.","first_name":"N.","last_name":"Gögh"},{"first_name":"P.","full_name":"Thomas, P.","last_name":"Thomas"},{"last_name":"Kuznetsova","full_name":"Kuznetsova, I.","first_name":"I."},{"first_name":"Torsten","full_name":"Meier, Torsten","last_name":"Meier","id":"344","orcid":"0000-0001-8864-2072"},{"first_name":"I.","full_name":"Varga, I.","last_name":"Varga"}]},{"user_id":"49063","publication_status":"published","citation":{"short":"N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, I. Varga, Annalen Der Physik (2010) 905–909.","bibtex":"@article{Gögh_Thomas_Kuznetsova_Meier_Varga_2010, title={Localization of excitons in weakly disordered semiconductor structures: A model study}, DOI={<a href=\"https://doi.org/10.1002/andp.200910382\">10.1002/andp.200910382</a>}, number={12}, journal={Annalen der Physik}, author={Gögh, N. and Thomas, P. and Kuznetsova, I. and Meier, Torsten and Varga, I.}, year={2010}, pages={905–909} }","mla":"Gögh, N., et al. “Localization of Excitons in Weakly Disordered Semiconductor Structures: A Model Study.” <i>Annalen Der Physik</i>, no. 12, 2010, pp. 905–09, doi:<a href=\"https://doi.org/10.1002/andp.200910382\">10.1002/andp.200910382</a>.","ieee":"N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, and I. Varga, “Localization of excitons in weakly disordered semiconductor structures: A model study,” <i>Annalen der Physik</i>, no. 12, pp. 905–909, 2010, doi: <a href=\"https://doi.org/10.1002/andp.200910382\">10.1002/andp.200910382</a>.","chicago":"Gögh, N., P. Thomas, I. Kuznetsova, Torsten Meier, and I. Varga. “Localization of Excitons in Weakly Disordered Semiconductor Structures: A Model Study.” <i>Annalen Der Physik</i>, no. 12 (2010): 905–9. <a href=\"https://doi.org/10.1002/andp.200910382\">https://doi.org/10.1002/andp.200910382</a>.","ama":"Gögh N, Thomas P, Kuznetsova I, Meier T, Varga I. Localization of excitons in weakly disordered semiconductor structures: A model study. <i>Annalen der Physik</i>. 2010;(12):905-909. doi:<a href=\"https://doi.org/10.1002/andp.200910382\">10.1002/andp.200910382</a>","apa":"Gögh, N., Thomas, P., Kuznetsova, I., Meier, T., &#38; Varga, I. (2010). Localization of excitons in weakly disordered semiconductor structures: A model study. <i>Annalen Der Physik</i>, <i>12</i>, 905–909. <a href=\"https://doi.org/10.1002/andp.200910382\">https://doi.org/10.1002/andp.200910382</a>"},"department":[{"_id":"15"},{"_id":"170"},{"_id":"293"},{"_id":"230"}],"author":[{"full_name":"Gögh, N.","first_name":"N.","last_name":"Gögh"},{"last_name":"Thomas","full_name":"Thomas, P.","first_name":"P."},{"first_name":"I.","full_name":"Kuznetsova, I.","last_name":"Kuznetsova"},{"full_name":"Meier, Torsten","first_name":"Torsten","id":"344","last_name":"Meier","orcid":"0000-0001-8864-2072"},{"full_name":"Varga, I.","first_name":"I.","last_name":"Varga"}],"title":"Localization of excitons in weakly disordered semiconductor structures: A model study","doi":"10.1002/andp.200910382","abstract":[{"lang":"eng","text":"We discuss transport and localization properties on the insulating side of the disorder dominated superconductor-insulator transition, described in terms of the dirty boson model. Analyzing the spectral properties of the interacting bosons in the absence of phonons, we argue that the Bose glass phase admits three distinct regimes. For strongest disorder the boson system is a fully localized, perfect insulator at any temperature. At smaller disorder, only the low temperature phase exhibits perfect insulation while delocalization takes place above a finite temperature. We argue that a third phase must intervene between these perfect insulators and the superconductor. This conducting Bose glass phase is characterized by a mobility edge in the many body spectrum, located at finite energy above the ground state. In this insulating regime purely electronically activated transport occurs, with a conductivity following an Arrhenius law at asymptotically low temperatures, while a tendency to superactivation is predicted at higher T. These predictions are in good agreement with recent transport experiments in highly disordered films of superconducting materials."}],"page":"905-909","_id":"23480","date_updated":"2023-04-19T11:12:57Z","issue":"12","publication":"Annalen der Physik","date_created":"2021-08-24T08:58:35Z","status":"public","type":"journal_article","year":"2010","publication_identifier":{"issn":["0003-3804","1521-3889"]},"language":[{"iso":"eng"}]},{"article_number":"125102","issue":"12","volume":81,"type":"journal_article","publication":"Physical Review B","quality_controlled":"1","ddc":["530"],"external_id":{"arxiv":["1003.0316"],"isi":["000276248900039"]},"oa":"1","user_id":"16199","doi":"10.1103/PhysRevB.81.125102","has_accepted_license":"1","abstract":[{"lang":"eng","text":"We present an implementation of the GW approximation for the electronic self-energy within the full-potential linearized augmented-plane-wave (FLAPW) method. The algorithm uses an all-electron mixed product basis for the representation of response matrices and related quantities. This basis is derived from the FLAPW basis and is exact for wave-function products. The correlation part of the self-energy is calculated on the imaginary-frequency axis with a subsequent analytic continuation to the real axis. As an alternative we can perform the frequency convolution of the Green function G and the dynamically screened Coulomb interaction W explicitly by a contour integration. The singularity of the bare and screened interaction potentials gives rise to a numerically important self-energy contribution, which we treat analytically to achieve good convergence with respect to the k-point sampling. As numerical realizations of the GW approximation typically suffer from the high computational expense required for the evaluation of the nonlocal and frequency-dependent self-energy, we demonstrate how the algorithm can be made very efficient by exploiting spatial and time-reversal symmetry as well as by applying an optimization of the mixed product basis that retains only the numerically important contributions of the electron-electron interaction. This optimization step reduces the basis size without compromising the accuracy and accelerates the code considerably. Furthermore, we demonstrate that one can employ an extrapolar approximation for high-lying states to reduce the number of empty states that must be taken into account explicitly in the construction of the polarization function and the self-energy. We show convergence tests, CPU timings, and results for prototype semiconductors and insulators as well as ferromagnetic nickel."}],"title":"Efficient implementation of the GW approximation within the all-electron FLAPW method","file":[{"title":"Efficient implementation of the GW approximation within the all-electron FLAPW method","access_level":"open_access","file_size":330212,"description":"© 2010 American Physical Society","creator":"schindlm","relation":"main_file","date_updated":"2020-08-30T15:06:54Z","date_created":"2020-08-28T11:29:11Z","content_type":"application/pdf","file_id":"18559","file_name":"PhysRevB.81.125102.pdf"}],"date_updated":"2023-04-20T14:57:10Z","file_date_updated":"2020-08-30T15:06:54Z","_id":"18558","isi":"1","language":[{"iso":"eng"}],"publication_identifier":{"eissn":["1550-235X"],"issn":["1098-0121"]},"year":"2010","status":"public","date_created":"2020-08-28T11:26:20Z","related_material":{"record":[{"relation":"other","status":"public","id":"22761"}]},"publisher":"American Physical Society","department":[{"_id":"296"},{"_id":"35"},{"_id":"15"},{"_id":"170"}],"citation":{"short":"C. Friedrich, S. Blügel, A. Schindlmayr, Physical Review B 81 (2010).","chicago":"Friedrich, Christoph, Stefan Blügel, and Arno Schindlmayr. “Efficient Implementation of the GW Approximation within the All-Electron FLAPW Method.” <i>Physical Review B</i> 81, no. 12 (2010). <a href=\"https://doi.org/10.1103/PhysRevB.81.125102\">https://doi.org/10.1103/PhysRevB.81.125102</a>.","ieee":"C. Friedrich, S. Blügel, and A. Schindlmayr, “Efficient implementation of the GW approximation within the all-electron FLAPW method,” <i>Physical Review B</i>, vol. 81, no. 12, Art. no. 125102, 2010, doi: <a href=\"https://doi.org/10.1103/PhysRevB.81.125102\">10.1103/PhysRevB.81.125102</a>.","mla":"Friedrich, Christoph, et al. “Efficient Implementation of the GW Approximation within the All-Electron FLAPW Method.” <i>Physical Review B</i>, vol. 81, no. 12, 125102, American Physical Society, 2010, doi:<a href=\"https://doi.org/10.1103/PhysRevB.81.125102\">10.1103/PhysRevB.81.125102</a>.","bibtex":"@article{Friedrich_Blügel_Schindlmayr_2010, title={Efficient implementation of the GW approximation within the all-electron FLAPW method}, volume={81}, DOI={<a href=\"https://doi.org/10.1103/PhysRevB.81.125102\">10.1103/PhysRevB.81.125102</a>}, number={12125102}, journal={Physical Review B}, publisher={American Physical Society}, author={Friedrich, Christoph and Blügel, Stefan and Schindlmayr, Arno}, year={2010} }","ama":"Friedrich C, Blügel S, Schindlmayr A. Efficient implementation of the GW approximation within the all-electron FLAPW method. <i>Physical Review B</i>. 2010;81(12). doi:<a href=\"https://doi.org/10.1103/PhysRevB.81.125102\">10.1103/PhysRevB.81.125102</a>","apa":"Friedrich, C., Blügel, S., &#38; Schindlmayr, A. (2010). Efficient implementation of the GW approximation within the all-electron FLAPW method. <i>Physical Review B</i>, <i>81</i>(12), Article 125102. <a href=\"https://doi.org/10.1103/PhysRevB.81.125102\">https://doi.org/10.1103/PhysRevB.81.125102</a>"},"publication_status":"published","intvolume":"        81","article_type":"original","author":[{"last_name":"Friedrich","full_name":"Friedrich, Christoph","first_name":"Christoph"},{"last_name":"Blügel","first_name":"Stefan","full_name":"Blügel, Stefan"},{"id":"458","last_name":"Schindlmayr","first_name":"Arno","full_name":"Schindlmayr, Arno","orcid":"0000-0002-4855-071X"}]},{"date_updated":"2023-05-01T12:48:34Z","issue":"3","volume":45,"_id":"44064","status":"public","publication_identifier":{"issn":["0420-0195"]},"type":"conference","year":"2010","language":[{"iso":"eng"}],"publication":"DPG Spring meeting 2010 ","date_created":"2023-04-19T11:01:12Z","department":[{"_id":"293"}],"user_id":"49063","main_file_link":[{"url":"https://www.dpg-verhandlungen.de/year/2010/conference/regensburg/part/hl/session/5/contribution/6"}],"publication_status":"published","series_title":"Verhandlungen der Deutschen Physikalischen Gesellschaft","citation":{"ama":"Meier T, Duc HT, Foerstner J, et al. Experimental and theoretical investigations of photocurrents in non-centrosymmetric semiconductor quantum wells. In: <i>DPG Spring Meeting 2010 </i>. Vol 45. Verhandlungen der Deutschen Physikalischen Gesellschaft. ; 2010.","apa":"Meier, T., Duc, H. T., Foerstner, J., Priyadarshi, S., Racu, A. M., Pierz, K., Siegner, U., &#38; Bieler, M. (2010). Experimental and theoretical investigations of photocurrents in non-centrosymmetric semiconductor quantum wells. <i>DPG Spring Meeting 2010 </i>, <i>45</i>(3).","chicago":"Meier, Torsten, Huynh Thanh Duc, Jens Foerstner, S. Priyadarshi, Ana Maria Racu, Klaus Pierz, Uwe Siegner, and Mark Bieler. “Experimental and Theoretical Investigations of Photocurrents in Non-Centrosymmetric Semiconductor Quantum Wells.” In <i>DPG Spring Meeting 2010 </i>, Vol. 45. Verhandlungen Der Deutschen Physikalischen Gesellschaft, 2010.","ieee":"T. Meier <i>et al.</i>, “Experimental and theoretical investigations of photocurrents in non-centrosymmetric semiconductor quantum wells,” in <i>DPG Spring meeting 2010 </i>, Regensburg, Germany, 2010, vol. 45, no. 3.","mla":"Meier, Torsten, et al. “Experimental and Theoretical Investigations of Photocurrents in Non-Centrosymmetric Semiconductor Quantum Wells.” <i>DPG Spring Meeting 2010 </i>, vol. 45, no. 3, 2010.","bibtex":"@inproceedings{Meier_Duc_Foerstner_Priyadarshi_Racu_Pierz_Siegner_Bieler_2010, series={Verhandlungen der Deutschen Physikalischen Gesellschaft}, title={Experimental and theoretical investigations of photocurrents in non-centrosymmetric semiconductor quantum wells}, volume={45}, number={3}, booktitle={DPG Spring meeting 2010 }, author={Meier, Torsten and Duc, Huynh Thanh and Foerstner, Jens and Priyadarshi, S. and Racu, Ana Maria and Pierz, Klaus and Siegner, Uwe and Bieler, Mark}, year={2010}, collection={Verhandlungen der Deutschen Physikalischen Gesellschaft} }","short":"T. Meier, H.T. Duc, J. Foerstner, S. Priyadarshi, A.M. Racu, K. Pierz, U. Siegner, M. Bieler, in: DPG Spring Meeting 2010 , 2010."},"abstract":[{"lang":"eng","text":"We compute photocurrents generated by femtosecond single-color laser pulses in non-centrosymmetric semiconductor quantum wells by combining a 14 x 14 k.p band structure theory with multi-band semiconductor Bloch equations. The transient photocurrents are investigated experimentally by measuring the associated Terahertz emission. The dependencies of the photocurrent and the Terahertz emission on the excitation conditions are discussed for (110)-oriented GaAs quantum wells. The comparison between theory and experiment shows a good agreement."}],"intvolume":"        45","author":[{"id":"344","last_name":"Meier","first_name":"Torsten","full_name":"Meier, Torsten","orcid":"0000-0001-8864-2072"},{"last_name":"Duc","first_name":"Huynh Thanh","full_name":"Duc, Huynh Thanh"},{"last_name":"Foerstner","full_name":"Foerstner, Jens","first_name":"Jens"},{"last_name":"Priyadarshi","first_name":"S.","full_name":"Priyadarshi, S."},{"last_name":"Racu","full_name":"Racu, Ana Maria","first_name":"Ana Maria"},{"last_name":"Pierz","first_name":"Klaus","full_name":"Pierz, Klaus"},{"last_name":"Siegner","full_name":"Siegner, Uwe","first_name":"Uwe"},{"first_name":"Mark","full_name":"Bieler, Mark","last_name":"Bieler"}],"conference":{"start_date":"2010-03-21","location":"Regensburg, Germany","name":"DPG Spring meeting 2010 ","end_date":"2010-03-26"},"title":"Experimental and theoretical investigations of photocurrents in non-centrosymmetric semiconductor quantum wells"},{"issue":"3","date_updated":"2023-05-01T12:56:11Z","volume":45,"_id":"44067","status":"public","language":[{"iso":"eng"}],"year":"2010","publication_identifier":{"issn":[" 0420-0195"]},"type":"conference","date_created":"2023-04-19T11:06:53Z","publication":"DPG Spring meeting 2010","department":[{"_id":"293"}],"main_file_link":[{"url":"https://www.dpg-verhandlungen.de/year/2010/conference/regensburg/part/hl/session/60/contribution/1"}],"publication_status":"published","user_id":"49063","citation":{"short":"T. Meier, C. Mollet, A. Kunoth, in: DPG Spring Meeting 2010, 2010.","bibtex":"@inproceedings{Meier_Mollet_Kunoth_2010, series={Verhandlungen der Deutschen Physikalischen Gesellschaft}, title={A numerical adaptive wavelet approach to excitonic absorption spectra of disordered semiconductor nanostructures}, volume={45}, number={3}, booktitle={DPG Spring meeting 2010}, author={Meier, Torsten and Mollet, Christian and Kunoth, Angela}, year={2010}, collection={Verhandlungen der Deutschen Physikalischen Gesellschaft} }","mla":"Meier, Torsten, et al. “A Numerical Adaptive Wavelet Approach to Excitonic Absorption Spectra of Disordered Semiconductor Nanostructures.” <i>DPG Spring Meeting 2010</i>, vol. 45, no. 3, 2010.","ieee":"T. Meier, C. Mollet, and A. Kunoth, “A numerical adaptive wavelet approach to excitonic absorption spectra of disordered semiconductor nanostructures,” in <i>DPG Spring meeting 2010</i>, Regensburg, Germany, 2010, vol. 45, no. 3.","chicago":"Meier, Torsten, Christian Mollet, and Angela Kunoth. “A Numerical Adaptive Wavelet Approach to Excitonic Absorption Spectra of Disordered Semiconductor Nanostructures.” In <i>DPG Spring Meeting 2010</i>, Vol. 45. Verhandlungen Der Deutschen Physikalischen Gesellschaft, 2010.","ama":"Meier T, Mollet C, Kunoth A. A numerical adaptive wavelet approach to excitonic absorption spectra of disordered semiconductor nanostructures. In: <i>DPG Spring Meeting 2010</i>. Vol 45. Verhandlungen der Deutschen Physikalischen Gesellschaft. ; 2010.","apa":"Meier, T., Mollet, C., &#38; Kunoth, A. (2010). A numerical adaptive wavelet approach to excitonic absorption spectra of disordered semiconductor nanostructures. <i>DPG Spring Meeting 2010</i>, <i>45</i>(3)."},"series_title":"Verhandlungen der Deutschen Physikalischen Gesellschaft","intvolume":"        45","abstract":[{"text":"Semiconductor nanostructures always contain a certain degree of disorder due to interface roughness and/or alloy disorder. The disorder has significant influence on the optical properties, e.g., excitonic absorption spectra. An adaptive wavelet approach for the solution of the excitonic Schroedinger equation, i.e., the semiconductor Bloch equation for the interband coherence linear in the external field, has been developed and applied to compute absorption spectra and/or wave functions. Results obtained for a thin GaAs semiconductor quantum wire considering a number of different model disorder potentials are presented and discussed.","lang":"eng"}],"author":[{"id":"344","last_name":"Meier","full_name":"Meier, Torsten","first_name":"Torsten","orcid":"0000-0001-8864-2072"},{"last_name":"Mollet","first_name":"Christian","full_name":"Mollet, Christian"},{"last_name":"Kunoth","full_name":"Kunoth, Angela","first_name":"Angela"}],"title":"A numerical adaptive wavelet approach to excitonic absorption spectra of disordered semiconductor nanostructures","conference":{"name":"DPG Spring meeting 2010","location":"Regensburg, Germany","start_date":"2010-03-21","end_date":"2010-03-26"}},{"date_created":"2023-04-19T11:03:20Z","language":[{"iso":"eng"}],"publication_identifier":{"issn":["0420-0195"]},"year":"2010","status":"public","_id":"44065","date_updated":"2023-05-01T12:51:52Z","conference":{"location":"Regensburg, Germany","start_date":"2010-03-21","name":"DPG Spring meeting 2010","end_date":"2010-03-26"},"author":[{"id":"344","last_name":"Meier","first_name":"Torsten","full_name":"Meier, Torsten","orcid":"0000-0001-8864-2072"},{"full_name":"Podzimski, Reinold","first_name":"Reinold","last_name":"Podzimski"},{"first_name":"Matthias","full_name":"Reichelt, Matthias","last_name":"Reichelt","id":"138"},{"last_name":"Utikal","first_name":"Tobias","full_name":"Utikal, Tobias"},{"last_name":"Giessen","full_name":"Giessen, Harald","first_name":"Harald"}],"intvolume":"        45","citation":{"apa":"Meier, T., Podzimski, R., Reichelt, M., Utikal, T., &#38; Giessen, H. (2010). Controlling the third-harmonic generation in a metallic photonic crystal coupled to a waveguide. <i>DPG Spring Meeting 2010</i>, <i>45</i>(3).","ama":"Meier T, Podzimski R, Reichelt M, Utikal T, Giessen H. Controlling the third-harmonic generation in a metallic photonic crystal coupled to a waveguide. In: <i>DPG Spring Meeting 2010</i>. Vol 45. Verhandlungen der Deutschen Physikalischen Gesellschaft. ; 2010.","ieee":"T. Meier, R. Podzimski, M. Reichelt, T. Utikal, and H. Giessen, “Controlling the third-harmonic generation in a metallic photonic crystal coupled to a waveguide,” in <i>DPG Spring meeting 2010</i>, Regensburg, Germany, 2010, vol. 45, no. 3.","chicago":"Meier, Torsten, Reinold Podzimski, Matthias Reichelt, Tobias Utikal, and Harald Giessen. “Controlling the Third-Harmonic Generation in a Metallic Photonic Crystal Coupled to a Waveguide.” In <i>DPG Spring Meeting 2010</i>, Vol. 45. Verhandlungen Der Deutschen Physikalischen Gesellschaft, 2010.","bibtex":"@inproceedings{Meier_Podzimski_Reichelt_Utikal_Giessen_2010, series={Verhandlungen der Deutschen Physikalischen Gesellschaft}, title={Controlling the third-harmonic generation in a metallic photonic crystal coupled to a waveguide}, volume={45}, number={3}, booktitle={DPG Spring meeting 2010}, author={Meier, Torsten and Podzimski, Reinold and Reichelt, Matthias and Utikal, Tobias and Giessen, Harald}, year={2010}, collection={Verhandlungen der Deutschen Physikalischen Gesellschaft} }","mla":"Meier, Torsten, et al. “Controlling the Third-Harmonic Generation in a Metallic Photonic Crystal Coupled to a Waveguide.” <i>DPG Spring Meeting 2010</i>, vol. 45, no. 3, 2010.","short":"T. Meier, R. Podzimski, M. Reichelt, T. Utikal, H. Giessen, in: DPG Spring Meeting 2010, 2010."},"series_title":"Verhandlungen der Deutschen Physikalischen Gesellschaft","publication_status":"published","department":[{"_id":"293"}],"publication":"DPG Spring meeting 2010","type":"conference","volume":45,"issue":"3","title":"Controlling the third-harmonic generation in a metallic photonic crystal coupled to a waveguide","abstract":[{"text":"The behavior of waveguide plasmon polaritons is studied employing ultrafast coherent control like schemes for a gold lattice coupled to a photonic waveguide for the structure. Different models to describe the third-harmonic generation are presented and the resulting equations are solved numerically. The calculations are compared to recent experimental data and show good agreement for the most prominent features in the time-integrated third order intensity.","lang":"eng"}],"main_file_link":[{"url":"https://www.dpg-verhandlungen.de/year/2010/conference/regensburg/part/o/session/59/contribution/36"}],"user_id":"49063"},{"publication":"DPG Spring meeting 2010","type":"conference","volume":45,"issue":"3","title":"Theoretical description of optical properties in III-V semiconductor nanostructures","abstract":[{"text":"We present a joint theoretical study of the optical properties of GaAs and AlAs bulk and heterostructures. Thereby, we compare the theoretical description of optical excitation on several levels of theory. Results obtained from kp theory are discussed along with data from ab initio calculations within the frameworks of independent-particle (DFT), independent quasiparticle (GW), or Coulomb-correlated quasiparticle (BSE) approximation.","lang":"eng"}],"user_id":"49063","main_file_link":[{"url":"https://www.dpg-verhandlungen.de/year/2010/conference/regensburg/part/hl/session/34/contribution/1"}],"date_created":"2023-04-19T11:05:15Z","status":"public","publication_identifier":{"issn":["0420-0195"]},"year":"2010","language":[{"iso":"eng"}],"_id":"44066","date_updated":"2023-05-01T12:54:38Z","author":[{"orcid":"0000-0001-8864-2072","id":"344","last_name":"Meier","full_name":"Meier, Torsten","first_name":"Torsten"},{"last_name":"Landmann","first_name":"Marc","full_name":"Landmann, Marc"},{"full_name":"Pochwala, Michal","first_name":"Michal","last_name":"Pochwala"},{"last_name":"Foerstner","first_name":"Jens","full_name":"Foerstner, Jens"},{"last_name":"Rauls","first_name":"Eva","full_name":"Rauls, Eva"},{"first_name":"Wolf Gero","full_name":"Schmidt, Wolf Gero","last_name":"Schmidt"}],"conference":{"end_date":"2010-03-26","start_date":"2010-03-21","location":"Regensburg, Germany","name":"DPG Spring meeting 2010"},"intvolume":"        45","publication_status":"published","series_title":"Verhandlungen der Deutschen Physikalischen Gesellschaft","citation":{"apa":"Meier, T., Landmann, M., Pochwala, M., Foerstner, J., Rauls, E., &#38; Schmidt, W. G. (2010). Theoretical description of optical properties in III-V semiconductor nanostructures. <i>DPG Spring Meeting 2010</i>, <i>45</i>(3).","ama":"Meier T, Landmann M, Pochwala M, Foerstner J, Rauls E, Schmidt WG. Theoretical description of optical properties in III-V semiconductor nanostructures. In: <i>DPG Spring Meeting 2010</i>. Vol 45. Verhandlungen der Deutschen Physikalischen Gesellschaft. ; 2010.","ieee":"T. Meier, M. Landmann, M. Pochwala, J. Foerstner, E. Rauls, and W. G. Schmidt, “Theoretical description of optical properties in III-V semiconductor nanostructures,” in <i>DPG Spring meeting 2010</i>, Regensburg, Germany, 2010, vol. 45, no. 3.","chicago":"Meier, Torsten, Marc Landmann, Michal Pochwala, Jens Foerstner, Eva Rauls, and Wolf Gero Schmidt. “Theoretical Description of Optical Properties in III-V Semiconductor Nanostructures.” In <i>DPG Spring Meeting 2010</i>, Vol. 45. Verhandlungen Der Deutschen Physikalischen Gesellschaft, 2010.","bibtex":"@inproceedings{Meier_Landmann_Pochwala_Foerstner_Rauls_Schmidt_2010, series={Verhandlungen der Deutschen Physikalischen Gesellschaft}, title={Theoretical description of optical properties in III-V semiconductor nanostructures}, volume={45}, number={3}, booktitle={DPG Spring meeting 2010}, author={Meier, Torsten and Landmann, Marc and Pochwala, Michal and Foerstner, Jens and Rauls, Eva and Schmidt, Wolf Gero}, year={2010}, collection={Verhandlungen der Deutschen Physikalischen Gesellschaft} }","mla":"Meier, Torsten, et al. “Theoretical Description of Optical Properties in III-V Semiconductor Nanostructures.” <i>DPG Spring Meeting 2010</i>, vol. 45, no. 3, 2010.","short":"T. Meier, M. Landmann, M. Pochwala, J. Foerstner, E. Rauls, W.G. Schmidt, in: DPG Spring Meeting 2010, 2010."},"department":[{"_id":"293"}]},{"type":"journal_article","publication":"physica status solidi (c)","issue":"2","volume":7,"page":"133-136","doi":"10.1002/pssc.200982413","project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"title":"Optical anisotropy of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles","user_id":"16199","status":"public","language":[{"iso":"eng"}],"publication_identifier":{"issn":["1862-6351","1610-1642"]},"year":"2010","date_created":"2019-10-01T14:34:59Z","date_updated":"2025-12-05T12:45:21Z","_id":"13581","intvolume":"         7","author":[{"full_name":"Wippermann, S.","first_name":"S.","last_name":"Wippermann"},{"first_name":"Wolf Gero","full_name":"Schmidt, Wolf Gero","id":"468","last_name":"Schmidt","orcid":"0000-0002-2717-5076"},{"last_name":"Bechstedt","full_name":"Bechstedt, F.","first_name":"F."},{"full_name":"Chandola, S.","first_name":"S.","last_name":"Chandola"},{"full_name":"Hinrichs, K.","first_name":"K.","last_name":"Hinrichs"},{"last_name":"Gensch","first_name":"M.","full_name":"Gensch, M."},{"last_name":"Esser","full_name":"Esser, N.","first_name":"N."},{"last_name":"Fleischer","first_name":"K.","full_name":"Fleischer, K."},{"last_name":"McGilp","full_name":"McGilp, J. F.","first_name":"J. F."}],"department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"publication_status":"published","citation":{"short":"S. Wippermann, W.G. Schmidt, F. Bechstedt, S. Chandola, K. Hinrichs, M. Gensch, N. Esser, K. Fleischer, J.F. McGilp, Physica Status Solidi (c) 7 (2010) 133–136.","mla":"Wippermann, S., et al. “Optical Anisotropy of Si(111)-(4 × 1)/(8 × 2)-In Nanowires Calculated Fromfirst-Principles.” <i>Physica Status Solidi (c)</i>, vol. 7, no. 2, 2010, pp. 133–36, doi:<a href=\"https://doi.org/10.1002/pssc.200982413\">10.1002/pssc.200982413</a>.","bibtex":"@article{Wippermann_Schmidt_Bechstedt_Chandola_Hinrichs_Gensch_Esser_Fleischer_McGilp_2010, title={Optical anisotropy of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles}, volume={7}, DOI={<a href=\"https://doi.org/10.1002/pssc.200982413\">10.1002/pssc.200982413</a>}, number={2}, journal={physica status solidi (c)}, author={Wippermann, S. and Schmidt, Wolf Gero and Bechstedt, F. and Chandola, S. and Hinrichs, K. and Gensch, M. and Esser, N. and Fleischer, K. and McGilp, J. F.}, year={2010}, pages={133–136} }","chicago":"Wippermann, S., Wolf Gero Schmidt, F. Bechstedt, S. Chandola, K. Hinrichs, M. Gensch, N. Esser, K. Fleischer, and J. F. McGilp. “Optical Anisotropy of Si(111)-(4 × 1)/(8 × 2)-In Nanowires Calculated Fromfirst-Principles.” <i>Physica Status Solidi (c)</i> 7, no. 2 (2010): 133–36. <a href=\"https://doi.org/10.1002/pssc.200982413\">https://doi.org/10.1002/pssc.200982413</a>.","ieee":"S. Wippermann <i>et al.</i>, “Optical anisotropy of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles,” <i>physica status solidi (c)</i>, vol. 7, no. 2, pp. 133–136, 2010, doi: <a href=\"https://doi.org/10.1002/pssc.200982413\">10.1002/pssc.200982413</a>.","apa":"Wippermann, S., Schmidt, W. G., Bechstedt, F., Chandola, S., Hinrichs, K., Gensch, M., Esser, N., Fleischer, K., &#38; McGilp, J. F. (2010). Optical anisotropy of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles. <i>Physica Status Solidi (c)</i>, <i>7</i>(2), 133–136. <a href=\"https://doi.org/10.1002/pssc.200982413\">https://doi.org/10.1002/pssc.200982413</a>","ama":"Wippermann S, Schmidt WG, Bechstedt F, et al. Optical anisotropy of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles. <i>physica status solidi (c)</i>. 2010;7(2):133-136. doi:<a href=\"https://doi.org/10.1002/pssc.200982413\">10.1002/pssc.200982413</a>"}},{"doi":"10.1002/pssc.200982473","has_accepted_license":"1","abstract":[{"lang":"eng","text":"Given the vast range of lithium niobate (LiNbO3) applications, the knowledge about its electronic and optical properties is surprisingly limited. The direct band gap of 3.7 eV for the ferroelectric phase – frequently cited in the literature – is concluded from optical experiments. Recent theoretical investigations show that the electronic band‐structure and optical properties are very sensitive to quasiparticle and electron‐hole attraction effects, which were included using the GW approximation for the electron self‐energy and the Bethe‐Salpeter equation respectively, both based on a model screening function. The calculated fundamental gap was found to be at least 1 eV larger than the experimental value. To resolve this discrepancy we performed first‐principles GW calculations for lithium niobate using the full‐potential linearized augmented plane‐wave (FLAPW) method. Thereby we use the parameter‐free random phase approximation for a realistic description of the nonlocal and energydependent screening. This leads to a band gap of about 4.7 (4.2) eV for ferro(para)‐electric lithium niobate."}],"project":[{"_id":"52","name":"Computing Resources Provided by the Paderborn Center for Parallel Computing"}],"file":[{"date_updated":"2020-08-30T15:07:56Z","relation":"main_file","date_created":"2020-08-28T14:39:40Z","title":"Do we know the band gap of lithium niobate?","access_level":"closed","file_id":"18583","content_type":"application/pdf","file_name":"pssc.200982473.pdf","file_size":212674,"creator":"schindlm","description":"© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim"}],"title":"Do we know the band gap of lithium niobate?","external_id":{"isi":["000284313000057"]},"user_id":"16199","type":"journal_article","ddc":["530"],"quality_controlled":"1","publication":"Physica Status Solidi C","issue":"2","volume":7,"page":"362-365","intvolume":"         7","author":[{"last_name":"Thierfelder","full_name":"Thierfelder, Christian","first_name":"Christian"},{"first_name":"Simone","full_name":"Sanna, Simone","last_name":"Sanna"},{"orcid":"0000-0002-4855-071X","last_name":"Schindlmayr","id":"458","full_name":"Schindlmayr, Arno","first_name":"Arno"},{"first_name":"Wolf Gero","full_name":"Schmidt, Wolf Gero","last_name":"Schmidt","id":"468","orcid":"0000-0002-2717-5076"}],"article_type":"original","conference":{"location":"Weimar","start_date":"2009-07-05","name":"12th International Conference on the Formation of Semiconductor Interfaces","end_date":"2009-07-10"},"department":[{"_id":"295"},{"_id":"296"},{"_id":"15"},{"_id":"35"},{"_id":"230"},{"_id":"27"},{"_id":"170"}],"publication_status":"published","citation":{"short":"C. Thierfelder, S. Sanna, A. Schindlmayr, W.G. Schmidt, Physica Status Solidi C 7 (2010) 362–365.","mla":"Thierfelder, Christian, et al. “Do We Know the Band Gap of Lithium Niobate?” <i>Physica Status Solidi C</i>, vol. 7, no. 2, Wiley-VCH, 2010, pp. 362–65, doi:<a href=\"https://doi.org/10.1002/pssc.200982473\">10.1002/pssc.200982473</a>.","bibtex":"@article{Thierfelder_Sanna_Schindlmayr_Schmidt_2010, title={Do we know the band gap of lithium niobate?}, volume={7}, DOI={<a href=\"https://doi.org/10.1002/pssc.200982473\">10.1002/pssc.200982473</a>}, number={2}, journal={Physica Status Solidi C}, publisher={Wiley-VCH}, author={Thierfelder, Christian and Sanna, Simone and Schindlmayr, Arno and Schmidt, Wolf Gero}, year={2010}, pages={362–365} }","chicago":"Thierfelder, Christian, Simone Sanna, Arno Schindlmayr, and Wolf Gero Schmidt. “Do We Know the Band Gap of Lithium Niobate?” <i>Physica Status Solidi C</i> 7, no. 2 (2010): 362–65. <a href=\"https://doi.org/10.1002/pssc.200982473\">https://doi.org/10.1002/pssc.200982473</a>.","ieee":"C. Thierfelder, S. Sanna, A. Schindlmayr, and W. G. Schmidt, “Do we know the band gap of lithium niobate?,” <i>Physica Status Solidi C</i>, vol. 7, no. 2, pp. 362–365, 2010, doi: <a href=\"https://doi.org/10.1002/pssc.200982473\">10.1002/pssc.200982473</a>.","ama":"Thierfelder C, Sanna S, Schindlmayr A, Schmidt WG. Do we know the band gap of lithium niobate? <i>Physica Status Solidi C</i>. 2010;7(2):362-365. doi:<a href=\"https://doi.org/10.1002/pssc.200982473\">10.1002/pssc.200982473</a>","apa":"Thierfelder, C., Sanna, S., Schindlmayr, A., &#38; Schmidt, W. G. (2010). Do we know the band gap of lithium niobate? <i>Physica Status Solidi C</i>, <i>7</i>(2), 362–365. <a href=\"https://doi.org/10.1002/pssc.200982473\">https://doi.org/10.1002/pssc.200982473</a>"},"status":"public","language":[{"iso":"eng"}],"publication_identifier":{"eissn":["1610-1642"],"issn":["1862-6351"]},"year":"2010","publisher":"Wiley-VCH","date_created":"2019-10-01T09:18:29Z","date_updated":"2025-12-05T13:01:45Z","_id":"13573","file_date_updated":"2020-08-30T15:07:56Z","isi":"1"}]