[{"publication_status":"published","date_updated":"2023-04-15T00:23:30Z","status":"public","year":"1995","title":"Coherent dynamics of exciton wave packets in quantum wells and superlattices","author":[{"last_name":"Meier","orcid":"0000-0001-8864-2072","first_name":"Torsten","full_name":"Meier, Torsten","id":"344"},{"first_name":"J.","last_name":"Feldmann","full_name":"Feldmann, J."},{"last_name":"Koch","first_name":"M.","full_name":"Koch, M."},{"full_name":"von Plessen, G.","last_name":"von Plessen","first_name":"G."},{"full_name":"Stolz, W.","last_name":"Stolz","first_name":"W."},{"full_name":"Thomas, P.","first_name":"P.","last_name":"Thomas"},{"full_name":"Göbel, E.O.","last_name":"Göbel","first_name":"E.O."}],"conference":{"location":"Vancouver, Canada","start_date":"1994-08-15","name":"The Physics of Semiconductors","end_date":"1994-08-19"},"user_id":"49063","editor":[{"full_name":"Lockwood, D.J.","last_name":"Lockwood","first_name":"D.J."}],"page":"1296-1303","language":[{"iso":"eng"}],"_id":"43451","publisher":"World Scientific","extern":"1","publication":"Proceedings of the 22nd International Conference on the Physics of Semiconductors ICPS","citation":{"ama":"Meier T, Feldmann J, Koch M, et al. Coherent dynamics of exciton wave packets in quantum wells and superlattices. In: Lockwood DJ, ed. <i>Proceedings of the 22nd International Conference on the Physics of Semiconductors ICPS</i>. World Scientific; 1995:1296-1303.","bibtex":"@inproceedings{Meier_Feldmann_Koch_von Plessen_Stolz_Thomas_Göbel_1995, place={Singapore}, title={Coherent dynamics of exciton wave packets in quantum wells and superlattices}, booktitle={Proceedings of the 22nd International Conference on the Physics of Semiconductors ICPS}, publisher={World Scientific}, author={Meier, Torsten and Feldmann, J. and Koch, M. and von Plessen, G. and Stolz, W. and Thomas, P. and Göbel, E.O.}, editor={Lockwood, D.J.}, year={1995}, pages={1296–1303} }","mla":"Meier, Torsten, et al. “Coherent Dynamics of Exciton Wave Packets in Quantum Wells and Superlattices.” <i>Proceedings of the 22nd International Conference on the Physics of Semiconductors ICPS</i>, edited by D.J. Lockwood, World Scientific, 1995, pp. 1296–303.","short":"T. Meier, J. Feldmann, M. Koch, G. von Plessen, W. Stolz, P. Thomas, E.O. Göbel, in: D.J. Lockwood (Ed.), Proceedings of the 22nd International Conference on the Physics of Semiconductors ICPS, World Scientific, Singapore, 1995, pp. 1296–1303.","chicago":"Meier, Torsten, J. Feldmann, M. Koch, G. von Plessen, W. Stolz, P. Thomas, and E.O. Göbel. “Coherent Dynamics of Exciton Wave Packets in Quantum Wells and Superlattices.” In <i>Proceedings of the 22nd International Conference on the Physics of Semiconductors ICPS</i>, edited by D.J. Lockwood, 1296–1303. Singapore: World Scientific, 1995.","apa":"Meier, T., Feldmann, J., Koch, M., von Plessen, G., Stolz, W., Thomas, P., &#38; Göbel, E. O. (1995). Coherent dynamics of exciton wave packets in quantum wells and superlattices. In D. J. Lockwood (Ed.), <i>Proceedings of the 22nd International Conference on the Physics of Semiconductors ICPS</i> (pp. 1296–1303). World Scientific.","ieee":"T. Meier <i>et al.</i>, “Coherent dynamics of exciton wave packets in quantum wells and superlattices,” in <i>Proceedings of the 22nd International Conference on the Physics of Semiconductors ICPS</i>, Vancouver, Canada, 1995, pp. 1296–1303."},"type":"conference","department":[{"_id":"293"}],"date_created":"2023-04-11T05:54:08Z","place":"Singapore"},{"user_id":"49063","volume":51,"page":"10909-10914","_id":"43452","publisher":"American Physical Society","status":"public","citation":{"mla":"Meier, Torsten, et al. “Polarization Dependence of Beating Phenomena at the Energetically Lowest Exciton Transition in GaAs Quantum Wells.” <i>Physical Review B</i>, vol. 51, no. 16, American Physical Society, 1995, pp. 10909–14, doi:<a href=\"https://doi.org/10.1103/PhysRevB.51.10909\">10.1103/PhysRevB.51.10909</a>.","ama":"Meier T, Mayer EJ, Smith GO, et al. Polarization dependence of beating phenomena at the energetically lowest exciton transition in GaAs quantum wells. <i>Physical Review B</i>. 1995;51(16):10909-10914. doi:<a href=\"https://doi.org/10.1103/PhysRevB.51.10909\">10.1103/PhysRevB.51.10909</a>","bibtex":"@article{Meier_Mayer_Smith_Heuckeroth_Kuhl_Bott_Schulze_Koch_Thomas_Hey_et al._1995, title={Polarization dependence of beating phenomena at the energetically lowest exciton transition in GaAs quantum wells}, volume={51}, DOI={<a href=\"https://doi.org/10.1103/PhysRevB.51.10909\">10.1103/PhysRevB.51.10909</a>}, number={16}, journal={Physical Review B}, publisher={American Physical Society}, author={Meier, Torsten and Mayer, E.J. and Smith, G.O. and Heuckeroth, V. and Kuhl, J. and Bott, K. and Schulze, A. and Koch, S.W. and Thomas, P. and Hey, R. and et al.}, year={1995}, pages={10909–10914} }","apa":"Meier, T., Mayer, E. J., Smith, G. O., Heuckeroth, V., Kuhl, J., Bott, K., Schulze, A., Koch, S. W., Thomas, P., Hey, R., &#38; Ploog, K. (1995). Polarization dependence of beating phenomena at the energetically lowest exciton transition in GaAs quantum wells. <i>Physical Review B</i>, <i>51</i>(16), 10909–10914. <a href=\"https://doi.org/10.1103/PhysRevB.51.10909\">https://doi.org/10.1103/PhysRevB.51.10909</a>","ieee":"T. Meier <i>et al.</i>, “Polarization dependence of beating phenomena at the energetically lowest exciton transition in GaAs quantum wells,” <i>Physical Review B</i>, vol. 51, no. 16, pp. 10909–10914, 1995, doi: <a href=\"https://doi.org/10.1103/PhysRevB.51.10909\">10.1103/PhysRevB.51.10909</a>.","short":"T. Meier, E.J. Mayer, G.O. Smith, V. Heuckeroth, J. Kuhl, K. Bott, A. Schulze, S.W. Koch, P. Thomas, R. Hey, K. Ploog, Physical Review B 51 (1995) 10909–10914.","chicago":"Meier, Torsten, E.J. Mayer, G.O. Smith, V. Heuckeroth, J. Kuhl, K. Bott, A. Schulze, et al. “Polarization Dependence of Beating Phenomena at the Energetically Lowest Exciton Transition in GaAs Quantum Wells.” <i>Physical Review B</i> 51, no. 16 (1995): 10909–14. <a href=\"https://doi.org/10.1103/PhysRevB.51.10909\">https://doi.org/10.1103/PhysRevB.51.10909</a>."},"doi":"10.1103/PhysRevB.51.10909","main_file_link":[{"url":"https://journals.aps.org/prb/abstract/10.1103/PhysRevB.51.10909"}],"language":[{"iso":"eng"}],"publication_status":"published","date_updated":"2023-04-11T05:58:26Z","intvolume":"        51","title":"Polarization dependence of beating phenomena at the energetically lowest exciton transition in GaAs quantum wells","year":"1995","author":[{"id":"344","full_name":"Meier, Torsten","orcid":"0000-0001-8864-2072","first_name":"Torsten","last_name":"Meier"},{"full_name":"Mayer, E.J.","first_name":"E.J.","last_name":"Mayer"},{"last_name":"Smith","first_name":"G.O.","full_name":"Smith, G.O."},{"last_name":"Heuckeroth","first_name":"V.","full_name":"Heuckeroth, V."},{"last_name":"Kuhl","first_name":"J.","full_name":"Kuhl, J."},{"last_name":"Bott","first_name":"K.","full_name":"Bott, K."},{"first_name":"A.","last_name":"Schulze","full_name":"Schulze, A."},{"last_name":"Koch","first_name":"S.W.","full_name":"Koch, S.W."},{"last_name":"Thomas","first_name":"P.","full_name":"Thomas, P."},{"first_name":"R.","last_name":"Hey","full_name":"Hey, R."},{"last_name":"Ploog","first_name":"K.","full_name":"Ploog, K."}],"type":"journal_article","department":[{"_id":"293"}],"date_created":"2023-04-11T05:58:23Z","extern":"1","abstract":[{"lang":"eng","text":"We report time-resolved degenerate four-wave-mixing experiments on a high-quality single GaAs quantum well. The signals for parallel and cross-polarized exciting pulses show pronounced quantum beats with different frequencies corresponding to the heavy/light-hole splitting and the biexciton binding energy, respectively. Comparison of the experimental data with solutions of the optical Bloch equations for a phenomenological model system shows that these features result from strong contributions of the biexcitonic state. The importance of biexcitons to the nonlinear coherent response of the two-dimension exciton is further confirmed by the frequency dependence of the time-integrated four-wave-mixing signal amplitudes measured for the two polarization geometries."}],"publication":"Physical Review B","issue":"16"},{"citation":{"ieee":"T. Meier, F. Rossi, P. Thomas, S. W. Koch, P. E. Selbmann, and E. Molinari, “Ultrafast carrier relaxation and vertical-transport phenomena in semiconductor superlattices: A Monte Carlo analysis,” <i>Physical Review B</i>, vol. 51, no. 23, pp. 16943–16953, 1995, doi: <a href=\"https://doi.org/10.1103/PhysRevB.51.16943\">10.1103/PhysRevB.51.16943</a>.","apa":"Meier, T., Rossi, F., Thomas, P., Koch, S. W., Selbmann, P. E., &#38; Molinari, E. (1995). Ultrafast carrier relaxation and vertical-transport phenomena in semiconductor superlattices: A Monte Carlo analysis. <i>Physical Review B</i>, <i>51</i>(23), 16943–16953. <a href=\"https://doi.org/10.1103/PhysRevB.51.16943\">https://doi.org/10.1103/PhysRevB.51.16943</a>","chicago":"Meier, Torsten, F. Rossi, P. Thomas, S.W. Koch, P.E. Selbmann, and E. Molinari. “Ultrafast Carrier Relaxation and Vertical-Transport Phenomena in Semiconductor Superlattices: A Monte Carlo Analysis.” <i>Physical Review B</i> 51, no. 23 (1995): 16943–53. <a href=\"https://doi.org/10.1103/PhysRevB.51.16943\">https://doi.org/10.1103/PhysRevB.51.16943</a>.","short":"T. Meier, F. Rossi, P. Thomas, S.W. Koch, P.E. Selbmann, E. Molinari, Physical Review B 51 (1995) 16943–16953.","mla":"Meier, Torsten, et al. “Ultrafast Carrier Relaxation and Vertical-Transport Phenomena in Semiconductor Superlattices: A Monte Carlo Analysis.” <i>Physical Review B</i>, vol. 51, no. 23, American Physical Society, 1995, pp. 16943–53, doi:<a href=\"https://doi.org/10.1103/PhysRevB.51.16943\">10.1103/PhysRevB.51.16943</a>.","bibtex":"@article{Meier_Rossi_Thomas_Koch_Selbmann_Molinari_1995, title={Ultrafast carrier relaxation and vertical-transport phenomena in semiconductor superlattices: A Monte Carlo analysis}, volume={51}, DOI={<a href=\"https://doi.org/10.1103/PhysRevB.51.16943\">10.1103/PhysRevB.51.16943</a>}, number={23}, journal={Physical Review B}, publisher={American Physical Society}, author={Meier, Torsten and Rossi, F. and Thomas, P. and Koch, S.W. and Selbmann, P.E. and Molinari, E.}, year={1995}, pages={16943–16953} }","ama":"Meier T, Rossi F, Thomas P, Koch SW, Selbmann PE, Molinari E. Ultrafast carrier relaxation and vertical-transport phenomena in semiconductor superlattices: A Monte Carlo analysis. <i>Physical Review B</i>. 1995;51(23):16943-16953. doi:<a href=\"https://doi.org/10.1103/PhysRevB.51.16943\">10.1103/PhysRevB.51.16943</a>"},"status":"public","_id":"43581","publisher":"American Physical Society","page":"16943-16953","volume":51,"user_id":"49063","issue":"23","publication":"Physical Review B","abstract":[{"lang":"eng","text":"The ultrafast dynamics of photoexcited carriers in semiconductor superlattices is studied theoretically on the basis of a Monte Carlo solution of the coupled Boltzmann transport equations for electrons and holes. The approach allows a kinetic description of the relevant interaction mechanisms such as intra- miniband and interminiband carrier-phonon scattering processes. The energy relaxation of photoexcited carriers, as well as their vertical transport, is investigated in detail. The effects of the multiminiband nature of the superlattice spectrum on the energy relaxation process are discussed with particular emphasis on the presence of Bloch oscillations induced by an external electric field. The analysis is performed for different superlattice structures and excitation conditions. It shows the dominant role of carrier–polar-optical-phonon interaction in determining the nature of the carrier dynamics in the low-density limit. In particular, the miniband width, compared to the phonon energy, turns out to be a relevant quantity in predicting the existence of Bloch oscillations."}],"extern":"1","date_created":"2023-04-14T22:52:34Z","department":[{"_id":"293"}],"type":"journal_article","author":[{"id":"344","full_name":"Meier, Torsten","first_name":"Torsten","last_name":"Meier","orcid":"0000-0001-8864-2072"},{"last_name":"Rossi","first_name":"F.","full_name":"Rossi, F."},{"last_name":"Thomas","first_name":"P.","full_name":"Thomas, P."},{"last_name":"Koch","first_name":"S.W.","full_name":"Koch, S.W."},{"last_name":"Selbmann","first_name":"P.E.","full_name":"Selbmann, P.E."},{"full_name":"Molinari, E.","last_name":"Molinari","first_name":"E."}],"title":"Ultrafast carrier relaxation and vertical-transport phenomena in semiconductor superlattices: A Monte Carlo analysis","year":"1995","intvolume":"        51","date_updated":"2023-04-14T22:52:40Z","publication_status":"published","language":[{"iso":"eng"}],"main_file_link":[{"url":"https://journals.aps.org/prb/abstract/10.1103/PhysRevB.51.16943"}],"doi":"10.1103/PhysRevB.51.16943"},{"year":"1995","title":"Signatures of Fano-resonances in four-wave mixing experiments","author":[{"last_name":"Meier","first_name":"Torsten","orcid":"0000-0001-8864-2072","full_name":"Meier, Torsten","id":"344"},{"full_name":"Schulze, A.","first_name":"A.","last_name":"Schulze"},{"last_name":"Thomas","first_name":"P.","full_name":"Thomas, P."},{"full_name":"Vaupel, H.","first_name":"H.","last_name":"Vaupel"},{"last_name":"Maschke","first_name":"K.","full_name":"Maschke, K."}],"date_updated":"2023-04-14T22:50:00Z","publication_status":"published","intvolume":"        51","main_file_link":[{"url":"https://journals.aps.org/prb/abstract/10.1103/PhysRevB.51.13977"}],"language":[{"iso":"eng"}],"doi":"10.1103/PhysRevB.51.13977","publication":"Physical Review B","issue":"20","abstract":[{"lang":"eng","text":"Optical transitions into discrete levels coupled to an optically active continuum lead to asymmetrical Fano lines in the linear absorption spectra, reflecting interference between the excitation channels. We investigate the corresponding four-wave-mixing spectra for the nonlinear optical response within a model of noninteracting electrons. Our results show that four-wave-mixing experiments provide a useful tool to identify Fano resonances."}],"extern":"1","date_created":"2023-04-14T22:46:56Z","type":"journal_article","department":[{"_id":"293"}],"status":"public","page":"13977-13986","publisher":"American Physical Society","_id":"43575","user_id":"49063","volume":51,"citation":{"chicago":"Meier, Torsten, A. Schulze, P. Thomas, H. Vaupel, and K. Maschke. “Signatures of Fano-Resonances in Four-Wave Mixing Experiments.” <i>Physical Review B</i> 51, no. 20 (1995): 13977–86. <a href=\"https://doi.org/10.1103/PhysRevB.51.13977\">https://doi.org/10.1103/PhysRevB.51.13977</a>.","short":"T. Meier, A. Schulze, P. Thomas, H. Vaupel, K. Maschke, Physical Review B 51 (1995) 13977–13986.","apa":"Meier, T., Schulze, A., Thomas, P., Vaupel, H., &#38; Maschke, K. (1995). Signatures of Fano-resonances in four-wave mixing experiments. <i>Physical Review B</i>, <i>51</i>(20), 13977–13986. <a href=\"https://doi.org/10.1103/PhysRevB.51.13977\">https://doi.org/10.1103/PhysRevB.51.13977</a>","ieee":"T. Meier, A. Schulze, P. Thomas, H. Vaupel, and K. Maschke, “Signatures of Fano-resonances in four-wave mixing experiments,” <i>Physical Review B</i>, vol. 51, no. 20, pp. 13977–13986, 1995, doi: <a href=\"https://doi.org/10.1103/PhysRevB.51.13977\">10.1103/PhysRevB.51.13977</a>.","ama":"Meier T, Schulze A, Thomas P, Vaupel H, Maschke K. Signatures of Fano-resonances in four-wave mixing experiments. <i>Physical Review B</i>. 1995;51(20):13977-13986. doi:<a href=\"https://doi.org/10.1103/PhysRevB.51.13977\">10.1103/PhysRevB.51.13977</a>","bibtex":"@article{Meier_Schulze_Thomas_Vaupel_Maschke_1995, title={Signatures of Fano-resonances in four-wave mixing experiments}, volume={51}, DOI={<a href=\"https://doi.org/10.1103/PhysRevB.51.13977\">10.1103/PhysRevB.51.13977</a>}, number={20}, journal={Physical Review B}, publisher={American Physical Society}, author={Meier, Torsten and Schulze, A. and Thomas, P. and Vaupel, H. and Maschke, K.}, year={1995}, pages={13977–13986} }","mla":"Meier, Torsten, et al. “Signatures of Fano-Resonances in Four-Wave Mixing Experiments.” <i>Physical Review B</i>, vol. 51, no. 20, American Physical Society, 1995, pp. 13977–86, doi:<a href=\"https://doi.org/10.1103/PhysRevB.51.13977\">10.1103/PhysRevB.51.13977</a>."}},{"department":[{"_id":"293"}],"type":"conference","date_created":"2023-04-14T22:41:40Z","abstract":[{"text":"The effective dimensionality of excitons can be drastically changed by applying an alternating electric field. On the basis of a full three-dimensional description of both coherent and incoherent phenomena in anisotropic structures it is found that appropriate applied oscillating fields change the exciton wave function from anisotropic three dimensional to basically two dimensional. This effective-dimension change is caused by dynamic localization which leads to an increase of the exciton binding energy and of the corresponding oscillator strength.","lang":"eng"}],"extern":"1","publication":"Proceedings of IV International Conference on Optics of Excitons in Confined Systems","doi":"10.1007/BF02457265","series_title":"l Nuovo Cimento D","language":[{"iso":"eng"}],"main_file_link":[{"url":"https://link.springer.com/article/10.1007/BF02457265"}],"intvolume":"        17","date_updated":"2023-05-01T11:07:20Z","publication_status":"published","author":[{"id":"344","orcid":"0000-0001-8864-2072","first_name":"Torsten","last_name":"Meier","full_name":"Meier, Torsten"},{"last_name":"Rossi","first_name":"F.","full_name":"Rossi, F."},{"first_name":"K.-C","last_name":"Je","full_name":"Je, K.-C"},{"full_name":"Hader, J.","first_name":"J.","last_name":"Hader"},{"full_name":"Thomas, P.","first_name":"P.","last_name":"Thomas"},{"full_name":"Koch, S.W.","first_name":"S.W.","last_name":"Koch"}],"year":"1995","title":"Linear and Non-linear Optical Properties of Semiconductor Superlattices: Excitonic and Field-Induced Effects","citation":{"bibtex":"@inproceedings{Meier_Rossi_Je_Hader_Thomas_Koch_1995, series={l Nuovo Cimento D}, title={Linear and Non-linear Optical Properties of Semiconductor Superlattices: Excitonic and Field-Induced Effects}, volume={17}, DOI={<a href=\"https://doi.org/10.1007/BF02457265\">10.1007/BF02457265</a>}, booktitle={Proceedings of IV International Conference on Optics of Excitons in Confined Systems}, publisher={Kluwer Academic Publishers}, author={Meier, Torsten and Rossi, F. and Je, K.-C and Hader, J. and Thomas, P. and Koch, S.W.}, year={1995}, pages={1693–1697}, collection={l Nuovo Cimento D} }","ama":"Meier T, Rossi F, Je K-C, Hader J, Thomas P, Koch SW. Linear and Non-linear Optical Properties of Semiconductor Superlattices: Excitonic and Field-Induced Effects. In: <i>Proceedings of IV International Conference on Optics of Excitons in Confined Systems</i>. Vol 17. l Nuovo Cimento D. Kluwer Academic Publishers; 1995:1693-1697. doi:<a href=\"https://doi.org/10.1007/BF02457265\">10.1007/BF02457265</a>","mla":"Meier, Torsten, et al. “Linear and Non-Linear Optical Properties of Semiconductor Superlattices: Excitonic and Field-Induced Effects.” <i>Proceedings of IV International Conference on Optics of Excitons in Confined Systems</i>, vol. 17, Kluwer Academic Publishers, 1995, pp. 1693–97, doi:<a href=\"https://doi.org/10.1007/BF02457265\">10.1007/BF02457265</a>.","short":"T. Meier, F. Rossi, K.-C. Je, J. Hader, P. Thomas, S.W. Koch, in: Proceedings of IV International Conference on Optics of Excitons in Confined Systems, Kluwer Academic Publishers, 1995, pp. 1693–1697.","chicago":"Meier, Torsten, F. Rossi, K.-C Je, J. Hader, P. Thomas, and S.W. Koch. “Linear and Non-Linear Optical Properties of Semiconductor Superlattices: Excitonic and Field-Induced Effects.” In <i>Proceedings of IV International Conference on Optics of Excitons in Confined Systems</i>, 17:1693–97. L Nuovo Cimento D. Kluwer Academic Publishers, 1995. <a href=\"https://doi.org/10.1007/BF02457265\">https://doi.org/10.1007/BF02457265</a>.","ieee":"T. Meier, F. Rossi, K.-C. Je, J. Hader, P. Thomas, and S. W. Koch, “Linear and Non-linear Optical Properties of Semiconductor Superlattices: Excitonic and Field-Induced Effects,” in <i>Proceedings of IV International Conference on Optics of Excitons in Confined Systems</i>, Cortona, Italy, 1995, vol. 17, pp. 1693–1697, doi: <a href=\"https://doi.org/10.1007/BF02457265\">10.1007/BF02457265</a>.","apa":"Meier, T., Rossi, F., Je, K.-C., Hader, J., Thomas, P., &#38; Koch, S. W. (1995). Linear and Non-linear Optical Properties of Semiconductor Superlattices: Excitonic and Field-Induced Effects. <i>Proceedings of IV International Conference on Optics of Excitons in Confined Systems</i>, <i>17</i>, 1693–1697. <a href=\"https://doi.org/10.1007/BF02457265\">https://doi.org/10.1007/BF02457265</a>"},"volume":17,"user_id":"49063","_id":"43568","publisher":"Kluwer Academic Publishers","page":"1693-1697","conference":{"location":"Cortona, Italy"},"status":"public"},{"intvolume":"        17","publication_status":"published","date_updated":"2023-05-01T11:06:50Z","author":[{"full_name":"Meier, Torsten","last_name":"Meier","orcid":"0000-0001-8864-2072","first_name":"Torsten","id":"344"},{"last_name":"von Plessen","first_name":"G.","full_name":"von Plessen, G."},{"first_name":"M.","last_name":"Koch","full_name":"Koch, M."},{"full_name":"Feldmann, J.","first_name":"J.","last_name":"Feldmann"},{"first_name":"S.W.","last_name":"Koch","full_name":"Koch, S.W."},{"full_name":"Thomas, P.","first_name":"P.","last_name":"Thomas"},{"full_name":"Göbel, E.O.","last_name":"Göbel","first_name":"E.O."},{"first_name":"K.W.","last_name":"Goosen","full_name":"Goosen, K.W."},{"full_name":"Kuo, J.M.","last_name":"Kuo","first_name":"J.M."},{"last_name":"Kopf","first_name":"R.F.","full_name":"Kopf, R.F."}],"title":"Electric-Field-Induced Exciton Ionization in a GaAs/AlGaAs Superlattice","year":"1995","doi":"10.1007/BF02457276","language":[{"iso":"eng"}],"series_title":"Il Nuovo Cimento D","main_file_link":[{"url":"https://link.springer.com/article/10.1007/BF02457276"}],"extern":"1","abstract":[{"lang":"eng","text":"We study exciton ionization induced by an axial electric field in a strongly coupled GaAs/Al0.3 Ga0.7 As superlattice at low temperatures. The field-induced ionization times of the heavy-hole 1s exciton in the miniband field regime are determined from transient four-wave-mixing experiments and theoretical model calculations. They are found to lie between the field ionization times of excitons in bulk semiconductors, and in strongly confined quantum well systems."}],"publication":"Proceedings of IV International Conference on Optics of Excitons in Confined Systems","department":[{"_id":"293"}],"type":"conference","date_created":"2023-04-14T22:44:01Z","conference":{"location":"Cortona, Italy"},"status":"public","volume":17,"user_id":"49063","_id":"43571","page":"1759-1762","citation":{"chicago":"Meier, Torsten, G. von Plessen, M. Koch, J. Feldmann, S.W. Koch, P. Thomas, E.O. Göbel, K.W. Goosen, J.M. Kuo, and R.F. Kopf. “Electric-Field-Induced Exciton Ionization in a GaAs/AlGaAs Superlattice.” In <i>Proceedings of IV International Conference on Optics of Excitons in Confined Systems</i>, 17:1759–62. Il Nuovo Cimento D, 1995. <a href=\"https://doi.org/10.1007/BF02457276\">https://doi.org/10.1007/BF02457276</a>.","short":"T. Meier, G. von Plessen, M. Koch, J. Feldmann, S.W. Koch, P. Thomas, E.O. Göbel, K.W. Goosen, J.M. Kuo, R.F. Kopf, in: Proceedings of IV International Conference on Optics of Excitons in Confined Systems, 1995, pp. 1759–1762.","ieee":"T. Meier <i>et al.</i>, “Electric-Field-Induced Exciton Ionization in a GaAs/AlGaAs Superlattice,” in <i>Proceedings of IV International Conference on Optics of Excitons in Confined Systems</i>, Cortona, Italy, 1995, vol. 17, pp. 1759–1762, doi: <a href=\"https://doi.org/10.1007/BF02457276\">10.1007/BF02457276</a>.","apa":"Meier, T., von Plessen, G., Koch, M., Feldmann, J., Koch, S. W., Thomas, P., Göbel, E. O., Goosen, K. W., Kuo, J. M., &#38; Kopf, R. F. (1995). Electric-Field-Induced Exciton Ionization in a GaAs/AlGaAs Superlattice. <i>Proceedings of IV International Conference on Optics of Excitons in Confined Systems</i>, <i>17</i>, 1759–1762. <a href=\"https://doi.org/10.1007/BF02457276\">https://doi.org/10.1007/BF02457276</a>","bibtex":"@inproceedings{Meier_von Plessen_Koch_Feldmann_Koch_Thomas_Göbel_Goosen_Kuo_Kopf_1995, series={Il Nuovo Cimento D}, title={Electric-Field-Induced Exciton Ionization in a GaAs/AlGaAs Superlattice}, volume={17}, DOI={<a href=\"https://doi.org/10.1007/BF02457276\">10.1007/BF02457276</a>}, booktitle={Proceedings of IV International Conference on Optics of Excitons in Confined Systems}, author={Meier, Torsten and von Plessen, G. and Koch, M. and Feldmann, J. and Koch, S.W. and Thomas, P. and Göbel, E.O. and Goosen, K.W. and Kuo, J.M. and Kopf, R.F.}, year={1995}, pages={1759–1762}, collection={Il Nuovo Cimento D} }","ama":"Meier T, von Plessen G, Koch M, et al. Electric-Field-Induced Exciton Ionization in a GaAs/AlGaAs Superlattice. In: <i>Proceedings of IV International Conference on Optics of Excitons in Confined Systems</i>. Vol 17. Il Nuovo Cimento D. ; 1995:1759-1762. doi:<a href=\"https://doi.org/10.1007/BF02457276\">10.1007/BF02457276</a>","mla":"Meier, Torsten, et al. “Electric-Field-Induced Exciton Ionization in a GaAs/AlGaAs Superlattice.” <i>Proceedings of IV International Conference on Optics of Excitons in Confined Systems</i>, vol. 17, 1995, pp. 1759–62, doi:<a href=\"https://doi.org/10.1007/BF02457276\">10.1007/BF02457276</a>."}},{"publication_status":"published","date_updated":"2023-05-01T11:14:00Z","year":"1995","title":"Quantum beats from biexcitons in narrow quantum wells: polarization and density dependence","publication_identifier":{"isbn":["1-55752-402-5"]},"author":[{"full_name":"Meier, Torsten","first_name":"Torsten","last_name":"Meier","orcid":"0000-0001-8864-2072","id":"344"},{"full_name":"Albrecht, T.F.","last_name":"Albrecht","first_name":"T.F."},{"last_name":"Schulze","first_name":"A.","full_name":"Schulze, A."},{"first_name":"M.","last_name":"Koch","full_name":"Koch, M."},{"first_name":"K.","last_name":"Bott","full_name":"Bott, K."},{"first_name":"J.","last_name":"Feldmann","full_name":"Feldmann, J."},{"first_name":"W.","last_name":"Stolz","full_name":"Stolz, W."},{"last_name":"Kuhl","first_name":"J.","full_name":"Kuhl, J."},{"first_name":"E.J.","last_name":"Mayer","full_name":"Mayer, E.J."},{"full_name":"Koch, S.W.","first_name":"S.W.","last_name":"Koch"},{"first_name":"E.O.","last_name":"Göbel","full_name":"Göbel, E.O."},{"full_name":"Cundiff, S.T.","first_name":"S.T.","last_name":"Cundiff"}],"article_number":"QFB2","main_file_link":[{"url":"https://opg.optica.org/abstract.cfm?uri=qels-1995-QFB2"}],"language":[{"iso":"eng"}],"extern":"1","abstract":[{"text":"Transient four-wave mixing (TFWM) has been extensively used during the last few years to study exciton dynamics in semiconductors and in semiconductor heterostructures. These studies have provided significant insight into exciton dynamics in both ordered and disordered systems. There are, nevertheless, still certain aspects of the excitonic TFWM response that are not completely understood. In particular, a complete understanding of the polarization and intensity dependences of the signai strength, the decay of the time-integrated signal, and the temporal characteristics of the time-resolved signal has proven elusive. Recent theoretical and experimental work has indicated that exciton-exciton interactions are important.1·2 Such interactions include incoherent processes, such as excitation-induced dephasing, and the formation of biexcitons. Additionally, some of the phenomena result from disorder, making them sample dependent.","lang":"eng"}],"publication":"Quantum Electronics and Laser Science Conference","type":"conference","department":[{"_id":"293"}],"date_created":"2023-05-01T11:13:52Z","status":"public","conference":{"name":"Quantum Electronics and Laser Science Conference 1995","start_date":"1995-05-22","location":"Baltimore, Maryland United States","end_date":"1995-05-26"},"user_id":"49063","_id":"44278","publisher":"Optical Society of America","citation":{"ama":"Meier T, Albrecht TF, Schulze A, et al. Quantum beats from biexcitons in narrow quantum wells: polarization and density dependence. In: <i>Quantum Electronics and Laser Science Conference</i>. Optical Society of America; 1995.","bibtex":"@inproceedings{Meier_Albrecht_Schulze_Koch_Bott_Feldmann_Stolz_Kuhl_Mayer_Koch_et al._1995, title={Quantum beats from biexcitons in narrow quantum wells: polarization and density dependence}, number={QFB2}, booktitle={Quantum Electronics and Laser Science Conference}, publisher={Optical Society of America}, author={Meier, Torsten and Albrecht, T.F. and Schulze, A. and Koch, M. and Bott, K. and Feldmann, J. and Stolz, W. and Kuhl, J. and Mayer, E.J. and Koch, S.W. and et al.}, year={1995} }","mla":"Meier, Torsten, et al. “Quantum Beats from Biexcitons in Narrow Quantum Wells: Polarization and Density Dependence.” <i>Quantum Electronics and Laser Science Conference</i>, QFB2, Optical Society of America, 1995.","short":"T. Meier, T.F. Albrecht, A. Schulze, M. Koch, K. Bott, J. Feldmann, W. Stolz, J. Kuhl, E.J. Mayer, S.W. Koch, E.O. Göbel, S.T. Cundiff, in: Quantum Electronics and Laser Science Conference, Optical Society of America, 1995.","chicago":"Meier, Torsten, T.F. Albrecht, A. Schulze, M. Koch, K. Bott, J. Feldmann, W. Stolz, et al. “Quantum Beats from Biexcitons in Narrow Quantum Wells: Polarization and Density Dependence.” In <i>Quantum Electronics and Laser Science Conference</i>. Optical Society of America, 1995.","apa":"Meier, T., Albrecht, T. F., Schulze, A., Koch, M., Bott, K., Feldmann, J., Stolz, W., Kuhl, J., Mayer, E. J., Koch, S. W., Göbel, E. O., &#38; Cundiff, S. T. (1995). Quantum beats from biexcitons in narrow quantum wells: polarization and density dependence. <i>Quantum Electronics and Laser Science Conference</i>, Article QFB2. Quantum Electronics and Laser Science Conference 1995, Baltimore, Maryland United States.","ieee":"T. Meier <i>et al.</i>, “Quantum beats from biexcitons in narrow quantum wells: polarization and density dependence,” presented at the Quantum Electronics and Laser Science Conference 1995, Baltimore, Maryland United States, 1995."}},{"citation":{"short":"T. Meier, J. Kuhl, E.J. Mayer, G.O. Smith, K. Bott, V. Heuckeroth, P. Thomas, M. Koch, R. Hey, K. Ploog, in: Quantum Electronics and Laser Science Conference, Optical Society of America, 1995.","chicago":"Meier, Torsten, J. Kuhl, E.J. Mayer, G.O. Smith, K. Bott, V. Heuckeroth, P. Thomas, M. Koch, R. Hey, and K. Ploog. “Polarization Dependence of Quantum Beats between Light-Hole and Heavy-Hole Excitons in GaAs Quantum Wells.” In <i>Quantum Electronics and Laser Science Conference</i>. Optical Society of America, 1995.","apa":"Meier, T., Kuhl, J., Mayer, E. J., Smith, G. O., Bott, K., Heuckeroth, V., Thomas, P., Koch, M., Hey, R., &#38; Ploog, K. (1995). Polarization dependence of quantum beats between light-hole and heavy-hole excitons in GaAs quantum wells. <i>Quantum Electronics and Laser Science Conference</i>, Article QFD6. Quantum Electronics and Laser Science Conference 1995, Baltimore, Maryland United States.","ieee":"T. Meier <i>et al.</i>, “Polarization dependence of quantum beats between light-hole and heavy-hole excitons in GaAs quantum wells,” presented at the Quantum Electronics and Laser Science Conference 1995, Baltimore, Maryland United States, 1995.","ama":"Meier T, Kuhl J, Mayer EJ, et al. Polarization dependence of quantum beats between light-hole and heavy-hole excitons in GaAs quantum wells. In: <i>Quantum Electronics and Laser Science Conference</i>. Optical Society of America; 1995.","bibtex":"@inproceedings{Meier_Kuhl_Mayer_Smith_Bott_Heuckeroth_Thomas_Koch_Hey_Ploog_1995, title={Polarization dependence of quantum beats between light-hole and heavy-hole excitons in GaAs quantum wells}, number={QFD6}, booktitle={Quantum Electronics and Laser Science Conference}, publisher={Optical Society of America}, author={Meier, Torsten and Kuhl, J. and Mayer, E.J. and Smith, G.O. and Bott, K. and Heuckeroth, V. and Thomas, P. and Koch, M. and Hey, R. and Ploog, K.}, year={1995} }","mla":"Meier, Torsten, et al. “Polarization Dependence of Quantum Beats between Light-Hole and Heavy-Hole Excitons in GaAs Quantum Wells.” <i>Quantum Electronics and Laser Science Conference</i>, QFD6, Optical Society of America, 1995."},"conference":{"end_date":"1995-05-26","location":"Baltimore, Maryland United States","start_date":"1995-05-22","name":"Quantum Electronics and Laser Science Conference 1995"},"status":"public","user_id":"49063","_id":"44277","publisher":"Optical Society of America","extern":"1","abstract":[{"text":"The appearance of quantum beats (QBs) between heavy-hole (hh) and light-hole (lh) excitons in GaAs quantum wells (QWs) has been observed in many degenerate-four- wave-mixing (DFWM) experiments with subpicosecond optical pulses. Although the variation of the beat amplitude and phase with polarization of the incident pulses was recognized early on, a consistent theoretical interpretation of exciton coherence for the case of simultaneous excitation of hh and lh excitons is still missing.","lang":"eng"}],"publication":"Quantum Electronics and Laser Science Conference","department":[{"_id":"293"}],"type":"conference","date_created":"2023-05-01T11:11:07Z","publication_status":"published","date_updated":"2023-05-01T11:11:10Z","author":[{"orcid":"0000-0001-8864-2072","last_name":"Meier","first_name":"Torsten","full_name":"Meier, Torsten","id":"344"},{"full_name":"Kuhl, J.","last_name":"Kuhl","first_name":"J."},{"full_name":"Mayer, E.J.","first_name":"E.J.","last_name":"Mayer"},{"full_name":"Smith, G.O.","last_name":"Smith","first_name":"G.O."},{"full_name":"Bott, K.","first_name":"K.","last_name":"Bott"},{"full_name":"Heuckeroth, V.","first_name":"V.","last_name":"Heuckeroth"},{"full_name":"Thomas, P.","first_name":"P.","last_name":"Thomas"},{"full_name":"Koch, M.","last_name":"Koch","first_name":"M."},{"full_name":"Hey, R.","first_name":"R.","last_name":"Hey"},{"last_name":"Ploog","first_name":"K.","full_name":"Ploog, K."}],"publication_identifier":{"isbn":["1-55752-402-5"]},"year":"1995","title":"Polarization dependence of quantum beats between light-hole and heavy-hole excitons in GaAs quantum wells","language":[{"iso":"eng"}],"article_number":"QFD6","main_file_link":[{"url":"https://opg.optica.org/abstract.cfm?uri=qels-1995-QFD6"}]},{"title":"Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces","year":"1995","publication_identifier":{"issn":["0163-1829","1095-3795"]},"author":[{"first_name":"Paulo V.","last_name":"Santos","full_name":"Santos, Paulo V."},{"full_name":"Esser, N.","last_name":"Esser","first_name":"N."},{"last_name":"Groenen","first_name":"J.","full_name":"Groenen, J."},{"last_name":"Cardona","first_name":"M.","full_name":"Cardona, M."},{"id":"468","full_name":"Schmidt, Wolf Gero","orcid":"0000-0002-2717-5076","last_name":"Schmidt","first_name":"Wolf Gero"},{"full_name":"Bechstedt, F.","first_name":"F.","last_name":"Bechstedt"}],"date_updated":"2025-12-16T07:27:40Z","publication_status":"published","intvolume":"        52","language":[{"iso":"eng"}],"doi":"10.1103/physrevb.52.17379","issue":"24","publication":"Physical Review B","date_created":"2019-10-10T16:18:55Z","type":"journal_article","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"status":"public","page":"17379-17385","_id":"13796","funded_apc":"1","user_id":"16199","volume":52,"citation":{"ieee":"P. V. Santos, N. Esser, J. Groenen, M. Cardona, W. G. Schmidt, and F. Bechstedt, “Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces,” <i>Physical Review B</i>, vol. 52, no. 24, pp. 17379–17385, 1995, doi: <a href=\"https://doi.org/10.1103/physrevb.52.17379\">10.1103/physrevb.52.17379</a>.","apa":"Santos, P. V., Esser, N., Groenen, J., Cardona, M., Schmidt, W. G., &#38; Bechstedt, F. (1995). Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces. <i>Physical Review B</i>, <i>52</i>(24), 17379–17385. <a href=\"https://doi.org/10.1103/physrevb.52.17379\">https://doi.org/10.1103/physrevb.52.17379</a>","mla":"Santos, Paulo V., et al. “Hydrogen Interaction with Sb-Terminated GaAs and InP (110) Surfaces.” <i>Physical Review B</i>, vol. 52, no. 24, 1995, pp. 17379–85, doi:<a href=\"https://doi.org/10.1103/physrevb.52.17379\">10.1103/physrevb.52.17379</a>.","bibtex":"@article{Santos_Esser_Groenen_Cardona_Schmidt_Bechstedt_1995, title={Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces}, volume={52}, DOI={<a href=\"https://doi.org/10.1103/physrevb.52.17379\">10.1103/physrevb.52.17379</a>}, number={24}, journal={Physical Review B}, author={Santos, Paulo V. and Esser, N. and Groenen, J. and Cardona, M. and Schmidt, Wolf Gero and Bechstedt, F.}, year={1995}, pages={17379–17385} }","chicago":"Santos, Paulo V., N. Esser, J. Groenen, M. Cardona, Wolf Gero Schmidt, and F. Bechstedt. “Hydrogen Interaction with Sb-Terminated GaAs and InP (110) Surfaces.” <i>Physical Review B</i> 52, no. 24 (1995): 17379–85. <a href=\"https://doi.org/10.1103/physrevb.52.17379\">https://doi.org/10.1103/physrevb.52.17379</a>.","short":"P.V. Santos, N. Esser, J. Groenen, M. Cardona, W.G. Schmidt, F. Bechstedt, Physical Review B 52 (1995) 17379–17385.","ama":"Santos PV, Esser N, Groenen J, Cardona M, Schmidt WG, Bechstedt F. Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces. <i>Physical Review B</i>. 1995;52(24):17379-17385. doi:<a href=\"https://doi.org/10.1103/physrevb.52.17379\">10.1103/physrevb.52.17379</a>"}},{"citation":{"mla":"Schmidt, Wolf Gero, et al. “III-V(110) Surface Dynamics from Anab Initiofrozen-Phonon Approach.” <i>Physical Review B</i>, vol. 52, no. 3, 1995, pp. 2001–07, doi:<a href=\"https://doi.org/10.1103/physrevb.52.2001\">10.1103/physrevb.52.2001</a>.","bibtex":"@article{Schmidt_Bechstedt_Srivastava_1995, title={III-V(110) surface dynamics from anab initiofrozen-phonon approach}, volume={52}, DOI={<a href=\"https://doi.org/10.1103/physrevb.52.2001\">10.1103/physrevb.52.2001</a>}, number={3}, journal={Physical Review B}, author={Schmidt, Wolf Gero and Bechstedt, F. and Srivastava, G. P.}, year={1995}, pages={2001–2007} }","ama":"Schmidt WG, Bechstedt F, Srivastava GP. III-V(110) surface dynamics from anab initiofrozen-phonon approach. <i>Physical Review B</i>. 1995;52(3):2001-2007. doi:<a href=\"https://doi.org/10.1103/physrevb.52.2001\">10.1103/physrevb.52.2001</a>","ieee":"W. G. Schmidt, F. Bechstedt, and G. P. Srivastava, “III-V(110) surface dynamics from anab initiofrozen-phonon approach,” <i>Physical Review B</i>, vol. 52, no. 3, pp. 2001–2007, 1995, doi: <a href=\"https://doi.org/10.1103/physrevb.52.2001\">10.1103/physrevb.52.2001</a>.","apa":"Schmidt, W. G., Bechstedt, F., &#38; Srivastava, G. P. (1995). III-V(110) surface dynamics from anab initiofrozen-phonon approach. <i>Physical Review B</i>, <i>52</i>(3), 2001–2007. <a href=\"https://doi.org/10.1103/physrevb.52.2001\">https://doi.org/10.1103/physrevb.52.2001</a>","short":"W.G. Schmidt, F. Bechstedt, G.P. Srivastava, Physical Review B 52 (1995) 2001–2007.","chicago":"Schmidt, Wolf Gero, F. Bechstedt, and G. P. Srivastava. “III-V(110) Surface Dynamics from Anab Initiofrozen-Phonon Approach.” <i>Physical Review B</i> 52, no. 3 (1995): 2001–7. <a href=\"https://doi.org/10.1103/physrevb.52.2001\">https://doi.org/10.1103/physrevb.52.2001</a>."},"_id":"13798","funded_apc":"1","page":"2001-2007","volume":52,"user_id":"16199","status":"public","date_created":"2019-10-10T16:24:49Z","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"type":"journal_article","issue":"3","publication":"Physical Review B","language":[{"iso":"eng"}],"doi":"10.1103/physrevb.52.2001","author":[{"id":"468","full_name":"Schmidt, Wolf Gero","orcid":"0000-0002-2717-5076","last_name":"Schmidt","first_name":"Wolf Gero"},{"full_name":"Bechstedt, F.","last_name":"Bechstedt","first_name":"F."},{"full_name":"Srivastava, G. P.","first_name":"G. P.","last_name":"Srivastava"}],"publication_identifier":{"issn":["0163-1829","1095-3795"]},"title":"III-V(110) surface dynamics from anab initiofrozen-phonon approach","year":"1995","intvolume":"        52","publication_status":"published","date_updated":"2025-12-16T07:26:56Z"},{"issue":"16","publication":"Physical Review B","citation":{"ieee":"P. V. Santos, N. Esser, M. Cardona, W. G. Schmidt, and F. Bechstedt, “Optical properties of Sb-terminated GaAs and InP (110) surfaces,” <i>Physical Review B</i>, vol. 52, no. 16, pp. 12158–12167, 1995, doi: <a href=\"https://doi.org/10.1103/physrevb.52.12158\">10.1103/physrevb.52.12158</a>.","apa":"Santos, P. V., Esser, N., Cardona, M., Schmidt, W. G., &#38; Bechstedt, F. (1995). Optical properties of Sb-terminated GaAs and InP (110) surfaces. <i>Physical Review B</i>, <i>52</i>(16), 12158–12167. <a href=\"https://doi.org/10.1103/physrevb.52.12158\">https://doi.org/10.1103/physrevb.52.12158</a>","chicago":"Santos, Paulo V., N. Esser, M. Cardona, Wolf Gero Schmidt, and F. Bechstedt. “Optical Properties of Sb-Terminated GaAs and InP (110) Surfaces.” <i>Physical Review B</i> 52, no. 16 (1995): 12158–67. <a href=\"https://doi.org/10.1103/physrevb.52.12158\">https://doi.org/10.1103/physrevb.52.12158</a>.","short":"P.V. Santos, N. Esser, M. Cardona, W.G. Schmidt, F. Bechstedt, Physical Review B 52 (1995) 12158–12167.","mla":"Santos, Paulo V., et al. “Optical Properties of Sb-Terminated GaAs and InP (110) Surfaces.” <i>Physical Review B</i>, vol. 52, no. 16, 1995, pp. 12158–67, doi:<a href=\"https://doi.org/10.1103/physrevb.52.12158\">10.1103/physrevb.52.12158</a>.","bibtex":"@article{Santos_Esser_Cardona_Schmidt_Bechstedt_1995, title={Optical properties of Sb-terminated GaAs and InP (110) surfaces}, volume={52}, DOI={<a href=\"https://doi.org/10.1103/physrevb.52.12158\">10.1103/physrevb.52.12158</a>}, number={16}, journal={Physical Review B}, author={Santos, Paulo V. and Esser, N. and Cardona, M. and Schmidt, Wolf Gero and Bechstedt, F.}, year={1995}, pages={12158–12167} }","ama":"Santos PV, Esser N, Cardona M, Schmidt WG, Bechstedt F. Optical properties of Sb-terminated GaAs and InP (110) surfaces. <i>Physical Review B</i>. 1995;52(16):12158-12167. doi:<a href=\"https://doi.org/10.1103/physrevb.52.12158\">10.1103/physrevb.52.12158</a>"},"type":"journal_article","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"date_created":"2019-10-10T16:21:14Z","publication_status":"published","date_updated":"2025-12-16T07:27:18Z","intvolume":"        52","title":"Optical properties of Sb-terminated GaAs and InP (110) surfaces","year":"1995","status":"public","author":[{"last_name":"Santos","first_name":"Paulo V.","full_name":"Santos, Paulo V."},{"full_name":"Esser, N.","last_name":"Esser","first_name":"N."},{"last_name":"Cardona","first_name":"M.","full_name":"Cardona, M."},{"full_name":"Schmidt, Wolf Gero","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero","last_name":"Schmidt","id":"468"},{"first_name":"F.","last_name":"Bechstedt","full_name":"Bechstedt, F."}],"publication_identifier":{"issn":["0163-1829","1095-3795"]},"user_id":"16199","doi":"10.1103/physrevb.52.12158","volume":52,"page":"12158-12167","_id":"13797","language":[{"iso":"eng"}]},{"date_created":"2019-10-10T16:30:16Z","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"type":"journal_article","citation":{"ieee":"W. G. Schmidt and F. Bechstedt, “Se/GaAs(110): energetics and structure,” <i>Surface Science</i>, vol. 331–333, no. Part A, pp. 557–563, 1995, doi: <a href=\"https://doi.org/10.1016/0039-6028(95)00317-7\">10.1016/0039-6028(95)00317-7</a>.","apa":"Schmidt, W. G., &#38; Bechstedt, F. (1995). Se/GaAs(110): energetics and structure. <i>Surface Science</i>, <i>331–333</i>(Part A), 557–563. <a href=\"https://doi.org/10.1016/0039-6028(95)00317-7\">https://doi.org/10.1016/0039-6028(95)00317-7</a>","mla":"Schmidt, Wolf Gero, and Friedhelm Bechstedt. “Se/GaAs(110): Energetics and Structure.” <i>Surface Science</i>, vol. 331–333, no. Part A, 1995, pp. 557–63, doi:<a href=\"https://doi.org/10.1016/0039-6028(95)00317-7\">10.1016/0039-6028(95)00317-7</a>.","bibtex":"@article{Schmidt_Bechstedt_1995, title={Se/GaAs(110): energetics and structure}, volume={331–333}, DOI={<a href=\"https://doi.org/10.1016/0039-6028(95)00317-7\">10.1016/0039-6028(95)00317-7</a>}, number={Part A}, journal={Surface Science}, author={Schmidt, Wolf Gero and Bechstedt, Friedhelm}, year={1995}, pages={557–563} }","ama":"Schmidt WG, Bechstedt F. Se/GaAs(110): energetics and structure. <i>Surface Science</i>. 1995;331-333(Part A):557-563. doi:<a href=\"https://doi.org/10.1016/0039-6028(95)00317-7\">10.1016/0039-6028(95)00317-7</a>","short":"W.G. Schmidt, F. Bechstedt, Surface Science 331–333 (1995) 557–563.","chicago":"Schmidt, Wolf Gero, and Friedhelm Bechstedt. “Se/GaAs(110): Energetics and Structure.” <i>Surface Science</i> 331–333, no. Part A (1995): 557–63. <a href=\"https://doi.org/10.1016/0039-6028(95)00317-7\">https://doi.org/10.1016/0039-6028(95)00317-7</a>."},"issue":"Part A","publication":"Surface Science","_id":"13799","funded_apc":"1","language":[{"iso":"eng"}],"page":"557-563","volume":"331-333","user_id":"16199","doi":"10.1016/0039-6028(95)00317-7","author":[{"id":"468","last_name":"Schmidt","first_name":"Wolf Gero","orcid":"0000-0002-2717-5076","full_name":"Schmidt, Wolf Gero"},{"first_name":"Friedhelm","last_name":"Bechstedt","full_name":"Bechstedt, Friedhelm"}],"publication_identifier":{"issn":["0039-6028"]},"year":"1995","title":"Se/GaAs(110): energetics and structure","status":"public","publication_status":"published","date_updated":"2025-12-16T07:26:36Z"},{"citation":{"ieee":"C. Kress, M. Fiedler, W. G. Schmidt, and F. Bechstedt, “Geometrical and electronic structure of the reconstructed diamond (100) surface,” <i>Physical Review B</i>, vol. 50, no. 23, pp. 17697–17700, 1995, doi: <a href=\"https://doi.org/10.1103/physrevb.50.17697\">10.1103/physrevb.50.17697</a>.","apa":"Kress, C., Fiedler, M., Schmidt, W. G., &#38; Bechstedt, F. (1995). Geometrical and electronic structure of the reconstructed diamond (100) surface. <i>Physical Review B</i>, <i>50</i>(23), 17697–17700. <a href=\"https://doi.org/10.1103/physrevb.50.17697\">https://doi.org/10.1103/physrevb.50.17697</a>","mla":"Kress, C., et al. “Geometrical and Electronic Structure of the Reconstructed Diamond (100) Surface.” <i>Physical Review B</i>, vol. 50, no. 23, 1995, pp. 17697–700, doi:<a href=\"https://doi.org/10.1103/physrevb.50.17697\">10.1103/physrevb.50.17697</a>.","bibtex":"@article{Kress_Fiedler_Schmidt_Bechstedt_1995, title={Geometrical and electronic structure of the reconstructed diamond (100) surface}, volume={50}, DOI={<a href=\"https://doi.org/10.1103/physrevb.50.17697\">10.1103/physrevb.50.17697</a>}, number={23}, journal={Physical Review B}, author={Kress, C. and Fiedler, M. and Schmidt, Wolf Gero and Bechstedt, F.}, year={1995}, pages={17697–17700} }","short":"C. Kress, M. Fiedler, W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17697–17700.","ama":"Kress C, Fiedler M, Schmidt WG, Bechstedt F. Geometrical and electronic structure of the reconstructed diamond (100) surface. <i>Physical Review B</i>. 1995;50(23):17697-17700. doi:<a href=\"https://doi.org/10.1103/physrevb.50.17697\">10.1103/physrevb.50.17697</a>","chicago":"Kress, C., M. Fiedler, Wolf Gero Schmidt, and F. Bechstedt. “Geometrical and Electronic Structure of the Reconstructed Diamond (100) Surface.” <i>Physical Review B</i> 50, no. 23 (1995): 17697–700. <a href=\"https://doi.org/10.1103/physrevb.50.17697\">https://doi.org/10.1103/physrevb.50.17697</a>."},"issue":"23","publication":"Physical Review B","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"type":"journal_article","date_created":"2019-10-15T09:56:32Z","intvolume":"        50","date_updated":"2025-12-16T07:39:18Z","publication_status":"published","publication_identifier":{"issn":["0163-1829","1095-3795"]},"author":[{"full_name":"Kress, C.","first_name":"C.","last_name":"Kress"},{"full_name":"Fiedler, M.","first_name":"M.","last_name":"Fiedler"},{"last_name":"Schmidt","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero","full_name":"Schmidt, Wolf Gero","id":"468"},{"full_name":"Bechstedt, F.","last_name":"Bechstedt","first_name":"F."}],"status":"public","year":"1995","title":"Geometrical and electronic structure of the reconstructed diamond (100) surface","volume":50,"doi":"10.1103/physrevb.50.17697","user_id":"16199","language":[{"iso":"eng"}],"_id":"13850","page":"17697-17700"},{"publication_identifier":{"issn":["0039-6028"]},"author":[{"full_name":"Kress, Clemens","first_name":"Clemens","last_name":"Kress"},{"full_name":"Fiedler, Marion","first_name":"Marion","last_name":"Fiedler"},{"id":"468","full_name":"Schmidt, Wolf Gero","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero","last_name":"Schmidt"},{"full_name":"Bechstedt, Friedhelm","first_name":"Friedhelm","last_name":"Bechstedt"}],"status":"public","year":"1995","title":"Quasi-particle band structure of C(111)2 × 1 and C(100)2 × 1 surfaces","date_updated":"2025-12-16T07:40:13Z","publication_status":"published","funded_apc":"1","_id":"13800","language":[{"iso":"eng"}],"page":"1152-1156","volume":"331-333","doi":"10.1016/0039-6028(95)00160-3","user_id":"16199","citation":{"ieee":"C. Kress, M. Fiedler, W. G. Schmidt, and F. Bechstedt, “Quasi-particle band structure of C(111)2 × 1 and C(100)2 × 1 surfaces,” <i>Surface Science</i>, vol. 331–333, pp. 1152–1156, 1995, doi: <a href=\"https://doi.org/10.1016/0039-6028(95)00160-3\">10.1016/0039-6028(95)00160-3</a>.","apa":"Kress, C., Fiedler, M., Schmidt, W. G., &#38; Bechstedt, F. (1995). Quasi-particle band structure of C(111)2 × 1 and C(100)2 × 1 surfaces. <i>Surface Science</i>, <i>331–333</i>, 1152–1156. <a href=\"https://doi.org/10.1016/0039-6028(95)00160-3\">https://doi.org/10.1016/0039-6028(95)00160-3</a>","chicago":"Kress, Clemens, Marion Fiedler, Wolf Gero Schmidt, and Friedhelm Bechstedt. “Quasi-Particle Band Structure of C(111)2 × 1 and C(100)2 × 1 Surfaces.” <i>Surface Science</i> 331–333 (1995): 1152–56. <a href=\"https://doi.org/10.1016/0039-6028(95)00160-3\">https://doi.org/10.1016/0039-6028(95)00160-3</a>.","short":"C. Kress, M. Fiedler, W.G. Schmidt, F. Bechstedt, Surface Science 331–333 (1995) 1152–1156.","mla":"Kress, Clemens, et al. “Quasi-Particle Band Structure of C(111)2 × 1 and C(100)2 × 1 Surfaces.” <i>Surface Science</i>, vol. 331–333, 1995, pp. 1152–56, doi:<a href=\"https://doi.org/10.1016/0039-6028(95)00160-3\">10.1016/0039-6028(95)00160-3</a>.","bibtex":"@article{Kress_Fiedler_Schmidt_Bechstedt_1995, title={Quasi-particle band structure of C(111)2 × 1 and C(100)2 × 1 surfaces}, volume={331–333}, DOI={<a href=\"https://doi.org/10.1016/0039-6028(95)00160-3\">10.1016/0039-6028(95)00160-3</a>}, journal={Surface Science}, author={Kress, Clemens and Fiedler, Marion and Schmidt, Wolf Gero and Bechstedt, Friedhelm}, year={1995}, pages={1152–1156} }","ama":"Kress C, Fiedler M, Schmidt WG, Bechstedt F. Quasi-particle band structure of C(111)2 × 1 and C(100)2 × 1 surfaces. <i>Surface Science</i>. 1995;331-333:1152-1156. doi:<a href=\"https://doi.org/10.1016/0039-6028(95)00160-3\">10.1016/0039-6028(95)00160-3</a>"},"publication":"Surface Science","date_created":"2019-10-10T16:32:35Z","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"type":"journal_article"},{"type":"journal_article","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"date_created":"2019-10-15T09:59:11Z","issue":"23","publication":"Physical Review B","citation":{"mla":"Schmidt, Wolf Gero, and F. Bechstedt. “Exchange Reactions versus Adsorption Geometries for Se/GaAs(110).” <i>Physical Review B</i>, vol. 50, no. 23, 1995, pp. 17651–54, doi:<a href=\"https://doi.org/10.1103/physrevb.50.17651\">10.1103/physrevb.50.17651</a>.","ama":"Schmidt WG, Bechstedt F. Exchange reactions versus adsorption geometries for Se/GaAs(110). <i>Physical Review B</i>. 1995;50(23):17651-17654. doi:<a href=\"https://doi.org/10.1103/physrevb.50.17651\">10.1103/physrevb.50.17651</a>","bibtex":"@article{Schmidt_Bechstedt_1995, title={Exchange reactions versus adsorption geometries for Se/GaAs(110)}, volume={50}, DOI={<a href=\"https://doi.org/10.1103/physrevb.50.17651\">10.1103/physrevb.50.17651</a>}, number={23}, journal={Physical Review B}, author={Schmidt, Wolf Gero and Bechstedt, F.}, year={1995}, pages={17651–17654} }","apa":"Schmidt, W. G., &#38; Bechstedt, F. (1995). Exchange reactions versus adsorption geometries for Se/GaAs(110). <i>Physical Review B</i>, <i>50</i>(23), 17651–17654. <a href=\"https://doi.org/10.1103/physrevb.50.17651\">https://doi.org/10.1103/physrevb.50.17651</a>","ieee":"W. G. Schmidt and F. Bechstedt, “Exchange reactions versus adsorption geometries for Se/GaAs(110),” <i>Physical Review B</i>, vol. 50, no. 23, pp. 17651–17654, 1995, doi: <a href=\"https://doi.org/10.1103/physrevb.50.17651\">10.1103/physrevb.50.17651</a>.","chicago":"Schmidt, Wolf Gero, and F. Bechstedt. “Exchange Reactions versus Adsorption Geometries for Se/GaAs(110).” <i>Physical Review B</i> 50, no. 23 (1995): 17651–54. <a href=\"https://doi.org/10.1103/physrevb.50.17651\">https://doi.org/10.1103/physrevb.50.17651</a>.","short":"W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17651–17654."},"user_id":"16199","doi":"10.1103/physrevb.50.17651","volume":50,"page":"17651-17654","language":[{"iso":"eng"}],"_id":"13851","publication_status":"published","date_updated":"2025-12-16T07:38:47Z","intvolume":"        50","status":"public","year":"1995","title":"Exchange reactions versus adsorption geometries for Se/GaAs(110)","author":[{"id":"468","full_name":"Schmidt, Wolf Gero","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero","last_name":"Schmidt"},{"first_name":"F.","last_name":"Bechstedt","full_name":"Bechstedt, F."}],"publication_identifier":{"issn":["0163-1829","1095-3795"]}},{"citation":{"mla":"Schmidt, Wolf Gero, and G. P. Srivastava. “III-V(110)/Sb(1 ML): Structural and Dynamical Properties.” <i>Surface Science</i>, vol. 331–333, no. Part A, 1995, pp. 540–45, doi:<a href=\"https://doi.org/10.1016/0039-6028(95)00304-5\">10.1016/0039-6028(95)00304-5</a>.","ama":"Schmidt WG, Srivastava GP. III-V(110)/Sb(1 ML): structural and dynamical properties. <i>Surface Science</i>. 1995;331-333(Part A):540-545. doi:<a href=\"https://doi.org/10.1016/0039-6028(95)00304-5\">10.1016/0039-6028(95)00304-5</a>","bibtex":"@article{Schmidt_Srivastava_1995, title={III-V(110)/Sb(1 ML): structural and dynamical properties}, volume={331–333}, DOI={<a href=\"https://doi.org/10.1016/0039-6028(95)00304-5\">10.1016/0039-6028(95)00304-5</a>}, number={Part A}, journal={Surface Science}, author={Schmidt, Wolf Gero and Srivastava, G.P.}, year={1995}, pages={540–545} }","apa":"Schmidt, W. G., &#38; Srivastava, G. P. (1995). III-V(110)/Sb(1 ML): structural and dynamical properties. <i>Surface Science</i>, <i>331–333</i>(Part A), 540–545. <a href=\"https://doi.org/10.1016/0039-6028(95)00304-5\">https://doi.org/10.1016/0039-6028(95)00304-5</a>","ieee":"W. G. Schmidt and G. P. Srivastava, “III-V(110)/Sb(1 ML): structural and dynamical properties,” <i>Surface Science</i>, vol. 331–333, no. Part A, pp. 540–545, 1995, doi: <a href=\"https://doi.org/10.1016/0039-6028(95)00304-5\">10.1016/0039-6028(95)00304-5</a>.","chicago":"Schmidt, Wolf Gero, and G.P. Srivastava. “III-V(110)/Sb(1 ML): Structural and Dynamical Properties.” <i>Surface Science</i> 331–333, no. Part A (1995): 540–45. <a href=\"https://doi.org/10.1016/0039-6028(95)00304-5\">https://doi.org/10.1016/0039-6028(95)00304-5</a>.","short":"W.G. Schmidt, G.P. Srivastava, Surface Science 331–333 (1995) 540–545."},"publication":"Surface Science","issue":"Part A","date_created":"2019-10-10T16:34:12Z","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"type":"journal_article","publication_identifier":{"issn":["0039-6028"]},"author":[{"id":"468","full_name":"Schmidt, Wolf Gero","last_name":"Schmidt","first_name":"Wolf Gero","orcid":"0000-0002-2717-5076"},{"first_name":"G.P.","last_name":"Srivastava","full_name":"Srivastava, G.P."}],"year":"1995","title":"III-V(110)/Sb(1 ML): structural and dynamical properties","status":"public","date_updated":"2025-12-16T07:39:35Z","publication_status":"published","funded_apc":"1","_id":"13801","language":[{"iso":"eng"}],"page":"540-545","volume":"331-333","doi":"10.1016/0039-6028(95)00304-5","user_id":"16199"},{"publication":"Physical Review B","issue":"23","citation":{"short":"W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17280–17291.","chicago":"Schmidt, Wolf Gero, and F. Bechstedt. “Se/GaAs(110): Atomic and Electronic Structure.” <i>Physical Review B</i> 50, no. 23 (1995): 17280–91. <a href=\"https://doi.org/10.1103/physrevb.50.17280\">https://doi.org/10.1103/physrevb.50.17280</a>.","ieee":"W. G. Schmidt and F. Bechstedt, “Se/GaAs(110): Atomic and electronic structure,” <i>Physical Review B</i>, vol. 50, no. 23, pp. 17280–17291, 1995, doi: <a href=\"https://doi.org/10.1103/physrevb.50.17280\">10.1103/physrevb.50.17280</a>.","apa":"Schmidt, W. G., &#38; Bechstedt, F. (1995). Se/GaAs(110): Atomic and electronic structure. <i>Physical Review B</i>, <i>50</i>(23), 17280–17291. <a href=\"https://doi.org/10.1103/physrevb.50.17280\">https://doi.org/10.1103/physrevb.50.17280</a>","bibtex":"@article{Schmidt_Bechstedt_1995, title={Se/GaAs(110): Atomic and electronic structure}, volume={50}, DOI={<a href=\"https://doi.org/10.1103/physrevb.50.17280\">10.1103/physrevb.50.17280</a>}, number={23}, journal={Physical Review B}, author={Schmidt, Wolf Gero and Bechstedt, F.}, year={1995}, pages={17280–17291} }","ama":"Schmidt WG, Bechstedt F. Se/GaAs(110): Atomic and electronic structure. <i>Physical Review B</i>. 1995;50(23):17280-17291. doi:<a href=\"https://doi.org/10.1103/physrevb.50.17280\">10.1103/physrevb.50.17280</a>","mla":"Schmidt, Wolf Gero, and F. Bechstedt. “Se/GaAs(110): Atomic and Electronic Structure.” <i>Physical Review B</i>, vol. 50, no. 23, 1995, pp. 17280–91, doi:<a href=\"https://doi.org/10.1103/physrevb.50.17280\">10.1103/physrevb.50.17280</a>."},"date_created":"2019-10-15T10:00:45Z","type":"journal_article","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"year":"1995","title":"Se/GaAs(110): Atomic and electronic structure","status":"public","publication_identifier":{"issn":["0163-1829","1095-3795"]},"author":[{"last_name":"Schmidt","first_name":"Wolf Gero","orcid":"0000-0002-2717-5076","full_name":"Schmidt, Wolf Gero","id":"468"},{"full_name":"Bechstedt, F.","last_name":"Bechstedt","first_name":"F."}],"publication_status":"published","date_updated":"2025-12-16T07:38:28Z","intvolume":"        50","page":"17280-17291","_id":"13852","language":[{"iso":"eng"}],"user_id":"16199","doi":"10.1103/physrevb.50.17280","volume":50},{"abstract":[{"text":"We study the critical field for the formation of Wannier-Stark ladders and Bloch oscillations in \r\nGaAs/AlxGa1−xAs superlattices at low temperatures. From the results of photocurrent and transient four-wave mixing experiments, we conclude that the critical field is higher for superlattices with wide minibands than for superlattices, with narrow minibands. The explanation for this dependence is that intraminiband scattering due to LO-phonon emission is excluded in minibands narrower than the LO-phonon energy.","lang":"eng"}],"extern":"1","issue":"19","publication":"Physical Review B","department":[{"_id":"293"}],"type":"journal_article","date_created":"2023-04-14T23:25:30Z","intvolume":"        49","date_updated":"2023-04-14T23:25:32Z","publication_status":"published","author":[{"first_name":"Torsten","orcid":"0000-0001-8864-2072","last_name":"Meier","full_name":"Meier, Torsten","id":"344"},{"first_name":"G.","last_name":"von Plessen","full_name":"von Plessen, G."},{"first_name":"J.","last_name":"Feldmann","full_name":"Feldmann, J."},{"full_name":"Göbel, E.O.","first_name":"E.O.","last_name":"Göbel"},{"full_name":"Thomas, P.","last_name":"Thomas","first_name":"P."},{"last_name":"Goosen","first_name":"K.W.","full_name":"Goosen, K.W."},{"first_name":"J.M.","last_name":"Kuo","full_name":"Kuo, J.M."},{"first_name":"R.F.","last_name":"Kopf","full_name":"Kopf, R.F."}],"title":"Influence of scattering on the formation of Wannier-Stark ladders and Bloch oscillations in semiconductor superlattices","year":"1994","doi":"10.1103/PhysRevB.49.14058","language":[{"iso":"eng"}],"main_file_link":[{"url":"https://journals.aps.org/prb/abstract/10.1103/PhysRevB.49.14058"}],"citation":{"bibtex":"@article{Meier_von Plessen_Feldmann_Göbel_Thomas_Goosen_Kuo_Kopf_1994, title={Influence of scattering on the formation of Wannier-Stark ladders and Bloch oscillations in semiconductor superlattices}, volume={49}, DOI={<a href=\"https://doi.org/10.1103/PhysRevB.49.14058\">10.1103/PhysRevB.49.14058</a>}, number={19}, journal={Physical Review B}, publisher={American Physical Society}, author={Meier, Torsten and von Plessen, G. and Feldmann, J. and Göbel, E.O. and Thomas, P. and Goosen, K.W. and Kuo, J.M. and Kopf, R.F.}, year={1994}, pages={14058–14061} }","ama":"Meier T, von Plessen G, Feldmann J, et al. Influence of scattering on the formation of Wannier-Stark ladders and Bloch oscillations in semiconductor superlattices. <i>Physical Review B</i>. 1994;49(19):14058-14061. doi:<a href=\"https://doi.org/10.1103/PhysRevB.49.14058\">10.1103/PhysRevB.49.14058</a>","mla":"Meier, Torsten, et al. “Influence of Scattering on the Formation of Wannier-Stark Ladders and Bloch Oscillations in Semiconductor Superlattices.” <i>Physical Review B</i>, vol. 49, no. 19, American Physical Society, 1994, pp. 14058–61, doi:<a href=\"https://doi.org/10.1103/PhysRevB.49.14058\">10.1103/PhysRevB.49.14058</a>.","short":"T. Meier, G. von Plessen, J. Feldmann, E.O. Göbel, P. Thomas, K.W. Goosen, J.M. Kuo, R.F. Kopf, Physical Review B 49 (1994) 14058–14061.","chicago":"Meier, Torsten, G. von Plessen, J. Feldmann, E.O. Göbel, P. Thomas, K.W. Goosen, J.M. Kuo, and R.F. Kopf. “Influence of Scattering on the Formation of Wannier-Stark Ladders and Bloch Oscillations in Semiconductor Superlattices.” <i>Physical Review B</i> 49, no. 19 (1994): 14058–61. <a href=\"https://doi.org/10.1103/PhysRevB.49.14058\">https://doi.org/10.1103/PhysRevB.49.14058</a>.","ieee":"T. Meier <i>et al.</i>, “Influence of scattering on the formation of Wannier-Stark ladders and Bloch oscillations in semiconductor superlattices,” <i>Physical Review B</i>, vol. 49, no. 19, pp. 14058–14061, 1994, doi: <a href=\"https://doi.org/10.1103/PhysRevB.49.14058\">10.1103/PhysRevB.49.14058</a>.","apa":"Meier, T., von Plessen, G., Feldmann, J., Göbel, E. O., Thomas, P., Goosen, K. W., Kuo, J. M., &#38; Kopf, R. F. (1994). Influence of scattering on the formation of Wannier-Stark ladders and Bloch oscillations in semiconductor superlattices. <i>Physical Review B</i>, <i>49</i>(19), 14058–14061. <a href=\"https://doi.org/10.1103/PhysRevB.49.14058\">https://doi.org/10.1103/PhysRevB.49.14058</a>"},"status":"public","volume":49,"user_id":"49063","_id":"43593","publisher":"American Physical Society","page":"14058-14061"},{"citation":{"bibtex":"@article{Meier_von Plessen_Thomas_Koch_1994, title={Coherent electric-field effects in semiconductors}, volume={73}, DOI={<a href=\"https://doi.org/10.1103/PhysRevLett.73.902\">10.1103/PhysRevLett.73.902</a>}, number={6}, journal={Physical Review Letters}, publisher={American Physical Society}, author={Meier, Torsten and von Plessen, G. and Thomas, P. and Koch, S.W.}, year={1994}, pages={902–905} }","ama":"Meier T, von Plessen G, Thomas P, Koch SW. Coherent electric-field effects in semiconductors. <i>Physical Review Letters</i>. 1994;73(6):902-905. doi:<a href=\"https://doi.org/10.1103/PhysRevLett.73.902\">10.1103/PhysRevLett.73.902</a>","mla":"Meier, Torsten, et al. “Coherent Electric-Field Effects in Semiconductors.” <i>Physical Review Letters</i>, vol. 73, no. 6, American Physical Society, 1994, pp. 902–05, doi:<a href=\"https://doi.org/10.1103/PhysRevLett.73.902\">10.1103/PhysRevLett.73.902</a>.","short":"T. Meier, G. von Plessen, P. Thomas, S.W. Koch, Physical Review Letters 73 (1994) 902–905.","chicago":"Meier, Torsten, G. von Plessen, P. Thomas, and S.W. Koch. “Coherent Electric-Field Effects in Semiconductors.” <i>Physical Review Letters</i> 73, no. 6 (1994): 902–5. <a href=\"https://doi.org/10.1103/PhysRevLett.73.902\">https://doi.org/10.1103/PhysRevLett.73.902</a>.","ieee":"T. Meier, G. von Plessen, P. Thomas, and S. W. Koch, “Coherent electric-field effects in semiconductors,” <i>Physical Review Letters</i>, vol. 73, no. 6, pp. 902–905, 1994, doi: <a href=\"https://doi.org/10.1103/PhysRevLett.73.902\">10.1103/PhysRevLett.73.902</a>.","apa":"Meier, T., von Plessen, G., Thomas, P., &#38; Koch, S. W. (1994). Coherent electric-field effects in semiconductors. <i>Physical Review Letters</i>, <i>73</i>(6), 902–905. <a href=\"https://doi.org/10.1103/PhysRevLett.73.902\">https://doi.org/10.1103/PhysRevLett.73.902</a>"},"status":"public","publisher":"American Physical Society","_id":"43592","page":"902-905","volume":73,"user_id":"49063","publication":"Physical Review Letters","issue":"6","extern":"1","abstract":[{"lang":"eng","text":"We present a microscopic analysis of coherent effects induced by electric fields in photoexcited semiconductors in the presence of the Coulomb interaction. Both the terahertz emission and four-wave-mixing signals arising from Bloch oscillations in a semiconductor superlattice are computed consistently. It is predicted that Bloch oscillations should be observable also for miniband widths on the order of the exciton binding energy."}],"date_created":"2023-04-14T23:22:41Z","department":[{"_id":"293"}],"type":"journal_article","author":[{"id":"344","last_name":"Meier","first_name":"Torsten","orcid":"0000-0001-8864-2072","full_name":"Meier, Torsten"},{"full_name":"von Plessen, G.","last_name":"von Plessen","first_name":"G."},{"full_name":"Thomas, P.","first_name":"P.","last_name":"Thomas"},{"full_name":"Koch, S.W.","first_name":"S.W.","last_name":"Koch"}],"title":"Coherent electric-field effects in semiconductors","year":"1994","intvolume":"        73","publication_status":"published","date_updated":"2023-04-14T23:22:44Z","language":[{"iso":"eng"}],"main_file_link":[{"url":"https://journals.aps.org/prl/abstract/10.1103/PhysRevLett.73.902"}],"doi":"10.1103/PhysRevLett.73.902"},{"citation":{"chicago":"Meier, Torsten, M. Koch, J. Feldmann, E.O. Göbel, F. Jahnke, W. Schäfer, P. Thomas, et al. “Coherent Dynamics of Exciton Wavepackets in Semiconductor Heterostructures.” In <i>Proceedings Der 8. International Winterschool on New Developments in Physics</i>, 9:1965–71. Semiconductor Science and Technology. IOP Publishing, 1994. <a href=\"https://doi.org/10.1088/0268-1242/9/11S/018\">https://doi.org/10.1088/0268-1242/9/11S/018</a>.","short":"T. Meier, M. Koch, J. Feldmann, E.O. Göbel, F. Jahnke, W. Schäfer, P. Thomas, S.W. Koch, H. Nickel, S. Luttgen, W. Stolz, in: Proceedings Der 8. International Winterschool on New Developments in Physics, IOP Publishing, 1994, pp. 1965–1971.","ieee":"T. Meier <i>et al.</i>, “Coherent Dynamics of Exciton Wavepackets in Semiconductor Heterostructures,” in <i>Proceedings der 8. International Winterschool on New Developments in Physics</i>, Mauterndorf, 1994, vol. 9, no. 11S, pp. 1965–1971, doi: <a href=\"https://doi.org/10.1088/0268-1242/9/11S/018\">10.1088/0268-1242/9/11S/018</a>.","apa":"Meier, T., Koch, M., Feldmann, J., Göbel, E. O., Jahnke, F., Schäfer, W., Thomas, P., Koch, S. W., Nickel, H., Luttgen, S., &#38; Stolz, W. (1994). Coherent Dynamics of Exciton Wavepackets in Semiconductor Heterostructures. <i>Proceedings Der 8. International Winterschool on New Developments in Physics</i>, <i>9</i>(11S), 1965–1971. <a href=\"https://doi.org/10.1088/0268-1242/9/11S/018\">https://doi.org/10.1088/0268-1242/9/11S/018</a>","bibtex":"@inproceedings{Meier_Koch_Feldmann_Göbel_Jahnke_Schäfer_Thomas_Koch_Nickel_Luttgen_et al._1994, series={Semiconductor science and technology}, title={Coherent Dynamics of Exciton Wavepackets in Semiconductor Heterostructures}, volume={9}, DOI={<a href=\"https://doi.org/10.1088/0268-1242/9/11S/018\">10.1088/0268-1242/9/11S/018</a>}, number={11S}, booktitle={Proceedings der 8. International Winterschool on New Developments in Physics}, publisher={IOP Publishing}, author={Meier, Torsten and Koch, M. and Feldmann, J. and Göbel, E.O. and Jahnke, F. and Schäfer, W. and Thomas, P. and Koch, S.W. and Nickel, H. and Luttgen, S. and et al.}, year={1994}, pages={1965–1971}, collection={Semiconductor science and technology} }","ama":"Meier T, Koch M, Feldmann J, et al. Coherent Dynamics of Exciton Wavepackets in Semiconductor Heterostructures. In: <i>Proceedings Der 8. International Winterschool on New Developments in Physics</i>. Vol 9. Semiconductor science and technology. IOP Publishing; 1994:1965-1971. doi:<a href=\"https://doi.org/10.1088/0268-1242/9/11S/018\">10.1088/0268-1242/9/11S/018</a>","mla":"Meier, Torsten, et al. “Coherent Dynamics of Exciton Wavepackets in Semiconductor Heterostructures.” <i>Proceedings Der 8. International Winterschool on New Developments in Physics</i>, vol. 9, no. 11S, IOP Publishing, 1994, pp. 1965–71, doi:<a href=\"https://doi.org/10.1088/0268-1242/9/11S/018\">10.1088/0268-1242/9/11S/018</a>."},"conference":{"location":"Mauterndorf"},"status":"public","publisher":"IOP Publishing","_id":"43450","page":"1965-1971","volume":9,"user_id":"49063","issue":"11S","publication":"Proceedings der 8. International Winterschool on New Developments in Physics","extern":"1","abstract":[{"lang":"eng","text":"The coherent dynamics of exciton wavepackets in (GaIn)As/GaAs as well as (GaIn)As/Ga(PAs) multiple quantum well structures is studied by means of transient four-wave mixing (FWM) experiments. The wavepackets are generated by simultaneous excitation of several exciton transitions with laser pulses of about 100 fs duration. The time-integrated FWM signals exhibit a pronounced modulation superimposed on the overall decay which can be attributed to the quantum interference of the different eigenstates. In the time-resolved FWM signals this interference is not present, reflecting the interplay between many-body Coulomb effects and inhomogeneous broadening. This experimental technique is then employed to extract the exciton binding energies in pseudomorphic symmetrically strained (GaIn)As/GaIPAs) with various In contents."}],"date_created":"2023-04-11T05:43:57Z","department":[{"_id":"293"}],"type":"conference","author":[{"last_name":"Meier","first_name":"Torsten","orcid":"0000-0001-8864-2072","full_name":"Meier, Torsten","id":"344"},{"full_name":"Koch, M.","last_name":"Koch","first_name":"M."},{"full_name":"Feldmann, J.","first_name":"J.","last_name":"Feldmann"},{"last_name":"Göbel","first_name":"E.O.","full_name":"Göbel, E.O."},{"last_name":"Jahnke","first_name":"F.","full_name":"Jahnke, F."},{"full_name":"Schäfer, W.","last_name":"Schäfer","first_name":"W."},{"full_name":"Thomas, P.","first_name":"P.","last_name":"Thomas"},{"first_name":"S.W.","last_name":"Koch","full_name":"Koch, S.W."},{"first_name":"H.","last_name":"Nickel","full_name":"Nickel, H."},{"first_name":"S.","last_name":"Luttgen","full_name":"Luttgen, S."},{"first_name":"W.","last_name":"Stolz","full_name":"Stolz, W."}],"year":"1994","title":"Coherent Dynamics of Exciton Wavepackets in Semiconductor Heterostructures","intvolume":"         9","publication_status":"published","date_updated":"2023-04-11T05:43:59Z","series_title":"Semiconductor science and technology","language":[{"iso":"eng"}],"main_file_link":[{"url":"https://iopscience.iop.org/article/10.1088/0268-1242/9/11S/018/meta"}],"doi":"10.1088/0268-1242/9/11S/018"}]