[{"year":"1995","title":"Linear and Non-linear Optical Properties of Semiconductor Superlattices: Excitonic and Field-Induced Effects","publisher":"Kluwer Academic Publishers","date_created":"2023-04-14T22:41:40Z","abstract":[{"text":"The effective dimensionality of excitons can be drastically changed by applying an alternating electric field. On the basis of a full three-dimensional description of both coherent and incoherent phenomena in anisotropic structures it is found that appropriate applied oscillating fields change the exciton wave function from anisotropic three dimensional to basically two dimensional. This effective-dimension change is caused by dynamic localization which leads to an increase of the exciton binding energy and of the corresponding oscillator strength.","lang":"eng"}],"publication":"Proceedings of IV International Conference on Optics of Excitons in Confined Systems","language":[{"iso":"eng"}],"citation":{"bibtex":"@inproceedings{Meier_Rossi_Je_Hader_Thomas_Koch_1995, series={l Nuovo Cimento D}, title={Linear and Non-linear Optical Properties of Semiconductor Superlattices: Excitonic and Field-Induced Effects}, volume={17}, DOI={<a href=\"https://doi.org/10.1007/BF02457265\">10.1007/BF02457265</a>}, booktitle={Proceedings of IV International Conference on Optics of Excitons in Confined Systems}, publisher={Kluwer Academic Publishers}, author={Meier, Torsten and Rossi, F. and Je, K.-C and Hader, J. and Thomas, P. and Koch, S.W.}, year={1995}, pages={1693–1697}, collection={l Nuovo Cimento D} }","short":"T. Meier, F. Rossi, K.-C. Je, J. Hader, P. Thomas, S.W. Koch, in: Proceedings of IV International Conference on Optics of Excitons in Confined Systems, Kluwer Academic Publishers, 1995, pp. 1693–1697.","mla":"Meier, Torsten, et al. “Linear and Non-Linear Optical Properties of Semiconductor Superlattices: Excitonic and Field-Induced Effects.” <i>Proceedings of IV International Conference on Optics of Excitons in Confined Systems</i>, vol. 17, Kluwer Academic Publishers, 1995, pp. 1693–97, doi:<a href=\"https://doi.org/10.1007/BF02457265\">10.1007/BF02457265</a>.","apa":"Meier, T., Rossi, F., Je, K.-C., Hader, J., Thomas, P., &#38; Koch, S. W. (1995). Linear and Non-linear Optical Properties of Semiconductor Superlattices: Excitonic and Field-Induced Effects. <i>Proceedings of IV International Conference on Optics of Excitons in Confined Systems</i>, <i>17</i>, 1693–1697. <a href=\"https://doi.org/10.1007/BF02457265\">https://doi.org/10.1007/BF02457265</a>","ieee":"T. Meier, F. Rossi, K.-C. Je, J. Hader, P. Thomas, and S. W. Koch, “Linear and Non-linear Optical Properties of Semiconductor Superlattices: Excitonic and Field-Induced Effects,” in <i>Proceedings of IV International Conference on Optics of Excitons in Confined Systems</i>, Cortona, Italy, 1995, vol. 17, pp. 1693–1697, doi: <a href=\"https://doi.org/10.1007/BF02457265\">10.1007/BF02457265</a>.","chicago":"Meier, Torsten, F. Rossi, K.-C Je, J. Hader, P. Thomas, and S.W. Koch. “Linear and Non-Linear Optical Properties of Semiconductor Superlattices: Excitonic and Field-Induced Effects.” In <i>Proceedings of IV International Conference on Optics of Excitons in Confined Systems</i>, 17:1693–97. L Nuovo Cimento D. Kluwer Academic Publishers, 1995. <a href=\"https://doi.org/10.1007/BF02457265\">https://doi.org/10.1007/BF02457265</a>.","ama":"Meier T, Rossi F, Je K-C, Hader J, Thomas P, Koch SW. Linear and Non-linear Optical Properties of Semiconductor Superlattices: Excitonic and Field-Induced Effects. In: <i>Proceedings of IV International Conference on Optics of Excitons in Confined Systems</i>. Vol 17. l Nuovo Cimento D. Kluwer Academic Publishers; 1995:1693-1697. doi:<a href=\"https://doi.org/10.1007/BF02457265\">10.1007/BF02457265</a>"},"intvolume":"        17","page":"1693-1697","publication_status":"published","main_file_link":[{"url":"https://link.springer.com/article/10.1007/BF02457265"}],"doi":"10.1007/BF02457265","conference":{"location":"Cortona, Italy"},"date_updated":"2023-05-01T11:07:20Z","author":[{"first_name":"Torsten","full_name":"Meier, Torsten","id":"344","last_name":"Meier","orcid":"0000-0001-8864-2072"},{"first_name":"F.","last_name":"Rossi","full_name":"Rossi, F."},{"first_name":"K.-C","full_name":"Je, K.-C","last_name":"Je"},{"full_name":"Hader, J.","last_name":"Hader","first_name":"J."},{"full_name":"Thomas, P.","last_name":"Thomas","first_name":"P."},{"last_name":"Koch","full_name":"Koch, S.W.","first_name":"S.W."}],"volume":17,"status":"public","type":"conference","extern":"1","_id":"43568","user_id":"49063","series_title":"l Nuovo Cimento D","department":[{"_id":"293"}]},{"abstract":[{"text":"We study exciton ionization induced by an axial electric field in a strongly coupled GaAs/Al0.3 Ga0.7 As superlattice at low temperatures. The field-induced ionization times of the heavy-hole 1s exciton in the miniband field regime are determined from transient four-wave-mixing experiments and theoretical model calculations. They are found to lie between the field ionization times of excitons in bulk semiconductors, and in strongly confined quantum well systems.","lang":"eng"}],"publication":"Proceedings of IV International Conference on Optics of Excitons in Confined Systems","language":[{"iso":"eng"}],"year":"1995","title":"Electric-Field-Induced Exciton Ionization in a GaAs/AlGaAs Superlattice","date_created":"2023-04-14T22:44:01Z","status":"public","type":"conference","extern":"1","user_id":"49063","series_title":"Il Nuovo Cimento D","department":[{"_id":"293"}],"_id":"43571","citation":{"mla":"Meier, Torsten, et al. “Electric-Field-Induced Exciton Ionization in a GaAs/AlGaAs Superlattice.” <i>Proceedings of IV International Conference on Optics of Excitons in Confined Systems</i>, vol. 17, 1995, pp. 1759–62, doi:<a href=\"https://doi.org/10.1007/BF02457276\">10.1007/BF02457276</a>.","bibtex":"@inproceedings{Meier_von Plessen_Koch_Feldmann_Koch_Thomas_Göbel_Goosen_Kuo_Kopf_1995, series={Il Nuovo Cimento D}, title={Electric-Field-Induced Exciton Ionization in a GaAs/AlGaAs Superlattice}, volume={17}, DOI={<a href=\"https://doi.org/10.1007/BF02457276\">10.1007/BF02457276</a>}, booktitle={Proceedings of IV International Conference on Optics of Excitons in Confined Systems}, author={Meier, Torsten and von Plessen, G. and Koch, M. and Feldmann, J. and Koch, S.W. and Thomas, P. and Göbel, E.O. and Goosen, K.W. and Kuo, J.M. and Kopf, R.F.}, year={1995}, pages={1759–1762}, collection={Il Nuovo Cimento D} }","short":"T. Meier, G. von Plessen, M. Koch, J. Feldmann, S.W. Koch, P. Thomas, E.O. Göbel, K.W. Goosen, J.M. Kuo, R.F. Kopf, in: Proceedings of IV International Conference on Optics of Excitons in Confined Systems, 1995, pp. 1759–1762.","apa":"Meier, T., von Plessen, G., Koch, M., Feldmann, J., Koch, S. W., Thomas, P., Göbel, E. O., Goosen, K. W., Kuo, J. M., &#38; Kopf, R. F. (1995). Electric-Field-Induced Exciton Ionization in a GaAs/AlGaAs Superlattice. <i>Proceedings of IV International Conference on Optics of Excitons in Confined Systems</i>, <i>17</i>, 1759–1762. <a href=\"https://doi.org/10.1007/BF02457276\">https://doi.org/10.1007/BF02457276</a>","ama":"Meier T, von Plessen G, Koch M, et al. Electric-Field-Induced Exciton Ionization in a GaAs/AlGaAs Superlattice. In: <i>Proceedings of IV International Conference on Optics of Excitons in Confined Systems</i>. Vol 17. Il Nuovo Cimento D. ; 1995:1759-1762. doi:<a href=\"https://doi.org/10.1007/BF02457276\">10.1007/BF02457276</a>","chicago":"Meier, Torsten, G. von Plessen, M. Koch, J. Feldmann, S.W. Koch, P. Thomas, E.O. Göbel, K.W. Goosen, J.M. Kuo, and R.F. Kopf. “Electric-Field-Induced Exciton Ionization in a GaAs/AlGaAs Superlattice.” In <i>Proceedings of IV International Conference on Optics of Excitons in Confined Systems</i>, 17:1759–62. Il Nuovo Cimento D, 1995. <a href=\"https://doi.org/10.1007/BF02457276\">https://doi.org/10.1007/BF02457276</a>.","ieee":"T. Meier <i>et al.</i>, “Electric-Field-Induced Exciton Ionization in a GaAs/AlGaAs Superlattice,” in <i>Proceedings of IV International Conference on Optics of Excitons in Confined Systems</i>, Cortona, Italy, 1995, vol. 17, pp. 1759–1762, doi: <a href=\"https://doi.org/10.1007/BF02457276\">10.1007/BF02457276</a>."},"page":"1759-1762","intvolume":"        17","publication_status":"published","main_file_link":[{"url":"https://link.springer.com/article/10.1007/BF02457276"}],"conference":{"location":"Cortona, Italy"},"doi":"10.1007/BF02457276","author":[{"orcid":"0000-0001-8864-2072","last_name":"Meier","id":"344","full_name":"Meier, Torsten","first_name":"Torsten"},{"last_name":"von Plessen","full_name":"von Plessen, G.","first_name":"G."},{"first_name":"M.","last_name":"Koch","full_name":"Koch, M."},{"last_name":"Feldmann","full_name":"Feldmann, J.","first_name":"J."},{"first_name":"S.W.","last_name":"Koch","full_name":"Koch, S.W."},{"first_name":"P.","last_name":"Thomas","full_name":"Thomas, P."},{"full_name":"Göbel, E.O.","last_name":"Göbel","first_name":"E.O."},{"last_name":"Goosen","full_name":"Goosen, K.W.","first_name":"K.W."},{"full_name":"Kuo, J.M.","last_name":"Kuo","first_name":"J.M."},{"last_name":"Kopf","full_name":"Kopf, R.F.","first_name":"R.F."}],"volume":17,"date_updated":"2023-05-01T11:06:50Z"},{"main_file_link":[{"url":"https://opg.optica.org/abstract.cfm?uri=qels-1995-QFB2"}],"conference":{"start_date":"1995-05-22","name":"Quantum Electronics and Laser Science Conference 1995","location":"Baltimore, Maryland United States","end_date":"1995-05-26"},"title":"Quantum beats from biexcitons in narrow quantum wells: polarization and density dependence","date_created":"2023-05-01T11:13:52Z","author":[{"orcid":"0000-0001-8864-2072","last_name":"Meier","id":"344","full_name":"Meier, Torsten","first_name":"Torsten"},{"first_name":"T.F.","last_name":"Albrecht","full_name":"Albrecht, T.F."},{"first_name":"A.","last_name":"Schulze","full_name":"Schulze, A."},{"full_name":"Koch, M.","last_name":"Koch","first_name":"M."},{"last_name":"Bott","full_name":"Bott, K.","first_name":"K."},{"first_name":"J.","last_name":"Feldmann","full_name":"Feldmann, J."},{"full_name":"Stolz, W.","last_name":"Stolz","first_name":"W."},{"first_name":"J.","full_name":"Kuhl, J.","last_name":"Kuhl"},{"first_name":"E.J.","last_name":"Mayer","full_name":"Mayer, E.J."},{"first_name":"S.W.","last_name":"Koch","full_name":"Koch, S.W."},{"last_name":"Göbel","full_name":"Göbel, E.O.","first_name":"E.O."},{"first_name":"S.T.","full_name":"Cundiff, S.T.","last_name":"Cundiff"}],"date_updated":"2023-05-01T11:14:00Z","publisher":"Optical Society of America","citation":{"ieee":"T. Meier <i>et al.</i>, “Quantum beats from biexcitons in narrow quantum wells: polarization and density dependence,” presented at the Quantum Electronics and Laser Science Conference 1995, Baltimore, Maryland United States, 1995.","chicago":"Meier, Torsten, T.F. Albrecht, A. Schulze, M. Koch, K. Bott, J. Feldmann, W. Stolz, et al. “Quantum Beats from Biexcitons in Narrow Quantum Wells: Polarization and Density Dependence.” In <i>Quantum Electronics and Laser Science Conference</i>. Optical Society of America, 1995.","ama":"Meier T, Albrecht TF, Schulze A, et al. Quantum beats from biexcitons in narrow quantum wells: polarization and density dependence. In: <i>Quantum Electronics and Laser Science Conference</i>. Optical Society of America; 1995.","short":"T. Meier, T.F. Albrecht, A. Schulze, M. Koch, K. Bott, J. Feldmann, W. Stolz, J. Kuhl, E.J. Mayer, S.W. Koch, E.O. Göbel, S.T. Cundiff, in: Quantum Electronics and Laser Science Conference, Optical Society of America, 1995.","bibtex":"@inproceedings{Meier_Albrecht_Schulze_Koch_Bott_Feldmann_Stolz_Kuhl_Mayer_Koch_et al._1995, title={Quantum beats from biexcitons in narrow quantum wells: polarization and density dependence}, number={QFB2}, booktitle={Quantum Electronics and Laser Science Conference}, publisher={Optical Society of America}, author={Meier, Torsten and Albrecht, T.F. and Schulze, A. and Koch, M. and Bott, K. and Feldmann, J. and Stolz, W. and Kuhl, J. and Mayer, E.J. and Koch, S.W. and et al.}, year={1995} }","mla":"Meier, Torsten, et al. “Quantum Beats from Biexcitons in Narrow Quantum Wells: Polarization and Density Dependence.” <i>Quantum Electronics and Laser Science Conference</i>, QFB2, Optical Society of America, 1995.","apa":"Meier, T., Albrecht, T. F., Schulze, A., Koch, M., Bott, K., Feldmann, J., Stolz, W., Kuhl, J., Mayer, E. J., Koch, S. W., Göbel, E. O., &#38; Cundiff, S. T. (1995). Quantum beats from biexcitons in narrow quantum wells: polarization and density dependence. <i>Quantum Electronics and Laser Science Conference</i>, Article QFB2. Quantum Electronics and Laser Science Conference 1995, Baltimore, Maryland United States."},"year":"1995","publication_status":"published","publication_identifier":{"isbn":["1-55752-402-5"]},"language":[{"iso":"eng"}],"extern":"1","article_number":"QFB2","user_id":"49063","department":[{"_id":"293"}],"_id":"44278","status":"public","abstract":[{"text":"Transient four-wave mixing (TFWM) has been extensively used during the last few years to study exciton dynamics in semiconductors and in semiconductor heterostructures. These studies have provided significant insight into exciton dynamics in both ordered and disordered systems. There are, nevertheless, still certain aspects of the excitonic TFWM response that are not completely understood. In particular, a complete understanding of the polarization and intensity dependences of the signai strength, the decay of the time-integrated signal, and the temporal characteristics of the time-resolved signal has proven elusive. Recent theoretical and experimental work has indicated that exciton-exciton interactions are important.1·2 Such interactions include incoherent processes, such as excitation-induced dephasing, and the formation of biexcitons. Additionally, some of the phenomena result from disorder, making them sample dependent.","lang":"eng"}],"type":"conference","publication":"Quantum Electronics and Laser Science Conference"},{"status":"public","abstract":[{"lang":"eng","text":"The appearance of quantum beats (QBs) between heavy-hole (hh) and light-hole (lh) excitons in GaAs quantum wells (QWs) has been observed in many degenerate-four- wave-mixing (DFWM) experiments with subpicosecond optical pulses. Although the variation of the beat amplitude and phase with polarization of the incident pulses was recognized early on, a consistent theoretical interpretation of exciton coherence for the case of simultaneous excitation of hh and lh excitons is still missing."}],"publication":"Quantum Electronics and Laser Science Conference","type":"conference","language":[{"iso":"eng"}],"extern":"1","article_number":"QFD6","department":[{"_id":"293"}],"user_id":"49063","_id":"44277","citation":{"short":"T. Meier, J. Kuhl, E.J. Mayer, G.O. Smith, K. Bott, V. Heuckeroth, P. Thomas, M. Koch, R. Hey, K. Ploog, in: Quantum Electronics and Laser Science Conference, Optical Society of America, 1995.","mla":"Meier, Torsten, et al. “Polarization Dependence of Quantum Beats between Light-Hole and Heavy-Hole Excitons in GaAs Quantum Wells.” <i>Quantum Electronics and Laser Science Conference</i>, QFD6, Optical Society of America, 1995.","bibtex":"@inproceedings{Meier_Kuhl_Mayer_Smith_Bott_Heuckeroth_Thomas_Koch_Hey_Ploog_1995, title={Polarization dependence of quantum beats between light-hole and heavy-hole excitons in GaAs quantum wells}, number={QFD6}, booktitle={Quantum Electronics and Laser Science Conference}, publisher={Optical Society of America}, author={Meier, Torsten and Kuhl, J. and Mayer, E.J. and Smith, G.O. and Bott, K. and Heuckeroth, V. and Thomas, P. and Koch, M. and Hey, R. and Ploog, K.}, year={1995} }","apa":"Meier, T., Kuhl, J., Mayer, E. J., Smith, G. O., Bott, K., Heuckeroth, V., Thomas, P., Koch, M., Hey, R., &#38; Ploog, K. (1995). Polarization dependence of quantum beats between light-hole and heavy-hole excitons in GaAs quantum wells. <i>Quantum Electronics and Laser Science Conference</i>, Article QFD6. Quantum Electronics and Laser Science Conference 1995, Baltimore, Maryland United States.","ieee":"T. Meier <i>et al.</i>, “Polarization dependence of quantum beats between light-hole and heavy-hole excitons in GaAs quantum wells,” presented at the Quantum Electronics and Laser Science Conference 1995, Baltimore, Maryland United States, 1995.","chicago":"Meier, Torsten, J. Kuhl, E.J. Mayer, G.O. Smith, K. Bott, V. Heuckeroth, P. Thomas, M. Koch, R. Hey, and K. Ploog. “Polarization Dependence of Quantum Beats between Light-Hole and Heavy-Hole Excitons in GaAs Quantum Wells.” In <i>Quantum Electronics and Laser Science Conference</i>. Optical Society of America, 1995.","ama":"Meier T, Kuhl J, Mayer EJ, et al. Polarization dependence of quantum beats between light-hole and heavy-hole excitons in GaAs quantum wells. In: <i>Quantum Electronics and Laser Science Conference</i>. Optical Society of America; 1995."},"year":"1995","publication_identifier":{"isbn":["1-55752-402-5"]},"publication_status":"published","conference":{"start_date":"1995-05-22","name":"Quantum Electronics and Laser Science Conference 1995","location":"Baltimore, Maryland United States","end_date":"1995-05-26"},"main_file_link":[{"url":"https://opg.optica.org/abstract.cfm?uri=qels-1995-QFD6"}],"title":"Polarization dependence of quantum beats between light-hole and heavy-hole excitons in GaAs quantum wells","date_created":"2023-05-01T11:11:07Z","author":[{"last_name":"Meier","orcid":"0000-0001-8864-2072","id":"344","full_name":"Meier, Torsten","first_name":"Torsten"},{"first_name":"J.","full_name":"Kuhl, J.","last_name":"Kuhl"},{"first_name":"E.J.","full_name":"Mayer, E.J.","last_name":"Mayer"},{"full_name":"Smith, G.O.","last_name":"Smith","first_name":"G.O."},{"last_name":"Bott","full_name":"Bott, K.","first_name":"K."},{"first_name":"V.","last_name":"Heuckeroth","full_name":"Heuckeroth, V."},{"full_name":"Thomas, P.","last_name":"Thomas","first_name":"P."},{"first_name":"M.","full_name":"Koch, M.","last_name":"Koch"},{"full_name":"Hey, R.","last_name":"Hey","first_name":"R."},{"full_name":"Ploog, K.","last_name":"Ploog","first_name":"K."}],"publisher":"Optical Society of America","date_updated":"2023-05-01T11:11:10Z"},{"title":"Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces","doi":"10.1103/physrevb.52.17379","date_updated":"2025-12-16T07:27:40Z","date_created":"2019-10-10T16:18:55Z","author":[{"first_name":"Paulo V.","full_name":"Santos, Paulo V.","last_name":"Santos"},{"last_name":"Esser","full_name":"Esser, N.","first_name":"N."},{"first_name":"J.","full_name":"Groenen, J.","last_name":"Groenen"},{"last_name":"Cardona","full_name":"Cardona, M.","first_name":"M."},{"first_name":"Wolf Gero","id":"468","full_name":"Schmidt, Wolf Gero","orcid":"0000-0002-2717-5076","last_name":"Schmidt"},{"full_name":"Bechstedt, F.","last_name":"Bechstedt","first_name":"F."}],"volume":52,"year":"1995","citation":{"chicago":"Santos, Paulo V., N. Esser, J. Groenen, M. Cardona, Wolf Gero Schmidt, and F. Bechstedt. “Hydrogen Interaction with Sb-Terminated GaAs and InP (110) Surfaces.” <i>Physical Review B</i> 52, no. 24 (1995): 17379–85. <a href=\"https://doi.org/10.1103/physrevb.52.17379\">https://doi.org/10.1103/physrevb.52.17379</a>.","ieee":"P. V. Santos, N. Esser, J. Groenen, M. Cardona, W. G. Schmidt, and F. Bechstedt, “Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces,” <i>Physical Review B</i>, vol. 52, no. 24, pp. 17379–17385, 1995, doi: <a href=\"https://doi.org/10.1103/physrevb.52.17379\">10.1103/physrevb.52.17379</a>.","ama":"Santos PV, Esser N, Groenen J, Cardona M, Schmidt WG, Bechstedt F. Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces. <i>Physical Review B</i>. 1995;52(24):17379-17385. doi:<a href=\"https://doi.org/10.1103/physrevb.52.17379\">10.1103/physrevb.52.17379</a>","apa":"Santos, P. V., Esser, N., Groenen, J., Cardona, M., Schmidt, W. G., &#38; Bechstedt, F. (1995). Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces. <i>Physical Review B</i>, <i>52</i>(24), 17379–17385. <a href=\"https://doi.org/10.1103/physrevb.52.17379\">https://doi.org/10.1103/physrevb.52.17379</a>","mla":"Santos, Paulo V., et al. “Hydrogen Interaction with Sb-Terminated GaAs and InP (110) Surfaces.” <i>Physical Review B</i>, vol. 52, no. 24, 1995, pp. 17379–85, doi:<a href=\"https://doi.org/10.1103/physrevb.52.17379\">10.1103/physrevb.52.17379</a>.","bibtex":"@article{Santos_Esser_Groenen_Cardona_Schmidt_Bechstedt_1995, title={Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces}, volume={52}, DOI={<a href=\"https://doi.org/10.1103/physrevb.52.17379\">10.1103/physrevb.52.17379</a>}, number={24}, journal={Physical Review B}, author={Santos, Paulo V. and Esser, N. and Groenen, J. and Cardona, M. and Schmidt, Wolf Gero and Bechstedt, F.}, year={1995}, pages={17379–17385} }","short":"P.V. Santos, N. Esser, J. Groenen, M. Cardona, W.G. Schmidt, F. Bechstedt, Physical Review B 52 (1995) 17379–17385."},"intvolume":"        52","page":"17379-17385","publication_status":"published","publication_identifier":{"issn":["0163-1829","1095-3795"]},"issue":"24","language":[{"iso":"eng"}],"funded_apc":"1","_id":"13796","user_id":"16199","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"status":"public","type":"journal_article","publication":"Physical Review B"},{"user_id":"16199","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"_id":"13798","language":[{"iso":"eng"}],"funded_apc":"1","type":"journal_article","publication":"Physical Review B","status":"public","date_created":"2019-10-10T16:24:49Z","author":[{"last_name":"Schmidt","orcid":"0000-0002-2717-5076","full_name":"Schmidt, Wolf Gero","id":"468","first_name":"Wolf Gero"},{"last_name":"Bechstedt","full_name":"Bechstedt, F.","first_name":"F."},{"first_name":"G. P.","full_name":"Srivastava, G. P.","last_name":"Srivastava"}],"volume":52,"date_updated":"2025-12-16T07:26:56Z","doi":"10.1103/physrevb.52.2001","title":"III-V(110) surface dynamics from anab initiofrozen-phonon approach","issue":"3","publication_status":"published","publication_identifier":{"issn":["0163-1829","1095-3795"]},"citation":{"ama":"Schmidt WG, Bechstedt F, Srivastava GP. III-V(110) surface dynamics from anab initiofrozen-phonon approach. <i>Physical Review B</i>. 1995;52(3):2001-2007. doi:<a href=\"https://doi.org/10.1103/physrevb.52.2001\">10.1103/physrevb.52.2001</a>","ieee":"W. G. Schmidt, F. Bechstedt, and G. P. Srivastava, “III-V(110) surface dynamics from anab initiofrozen-phonon approach,” <i>Physical Review B</i>, vol. 52, no. 3, pp. 2001–2007, 1995, doi: <a href=\"https://doi.org/10.1103/physrevb.52.2001\">10.1103/physrevb.52.2001</a>.","chicago":"Schmidt, Wolf Gero, F. Bechstedt, and G. P. Srivastava. “III-V(110) Surface Dynamics from Anab Initiofrozen-Phonon Approach.” <i>Physical Review B</i> 52, no. 3 (1995): 2001–7. <a href=\"https://doi.org/10.1103/physrevb.52.2001\">https://doi.org/10.1103/physrevb.52.2001</a>.","bibtex":"@article{Schmidt_Bechstedt_Srivastava_1995, title={III-V(110) surface dynamics from anab initiofrozen-phonon approach}, volume={52}, DOI={<a href=\"https://doi.org/10.1103/physrevb.52.2001\">10.1103/physrevb.52.2001</a>}, number={3}, journal={Physical Review B}, author={Schmidt, Wolf Gero and Bechstedt, F. and Srivastava, G. P.}, year={1995}, pages={2001–2007} }","short":"W.G. Schmidt, F. Bechstedt, G.P. Srivastava, Physical Review B 52 (1995) 2001–2007.","mla":"Schmidt, Wolf Gero, et al. “III-V(110) Surface Dynamics from Anab Initiofrozen-Phonon Approach.” <i>Physical Review B</i>, vol. 52, no. 3, 1995, pp. 2001–07, doi:<a href=\"https://doi.org/10.1103/physrevb.52.2001\">10.1103/physrevb.52.2001</a>.","apa":"Schmidt, W. G., Bechstedt, F., &#38; Srivastava, G. P. (1995). III-V(110) surface dynamics from anab initiofrozen-phonon approach. <i>Physical Review B</i>, <i>52</i>(3), 2001–2007. <a href=\"https://doi.org/10.1103/physrevb.52.2001\">https://doi.org/10.1103/physrevb.52.2001</a>"},"page":"2001-2007","intvolume":"        52","year":"1995"},{"page":"12158-12167","intvolume":"        52","citation":{"ieee":"P. V. Santos, N. Esser, M. Cardona, W. G. Schmidt, and F. Bechstedt, “Optical properties of Sb-terminated GaAs and InP (110) surfaces,” <i>Physical Review B</i>, vol. 52, no. 16, pp. 12158–12167, 1995, doi: <a href=\"https://doi.org/10.1103/physrevb.52.12158\">10.1103/physrevb.52.12158</a>.","chicago":"Santos, Paulo V., N. Esser, M. Cardona, Wolf Gero Schmidt, and F. Bechstedt. “Optical Properties of Sb-Terminated GaAs and InP (110) Surfaces.” <i>Physical Review B</i> 52, no. 16 (1995): 12158–67. <a href=\"https://doi.org/10.1103/physrevb.52.12158\">https://doi.org/10.1103/physrevb.52.12158</a>.","ama":"Santos PV, Esser N, Cardona M, Schmidt WG, Bechstedt F. Optical properties of Sb-terminated GaAs and InP (110) surfaces. <i>Physical Review B</i>. 1995;52(16):12158-12167. doi:<a href=\"https://doi.org/10.1103/physrevb.52.12158\">10.1103/physrevb.52.12158</a>","short":"P.V. Santos, N. Esser, M. Cardona, W.G. Schmidt, F. Bechstedt, Physical Review B 52 (1995) 12158–12167.","bibtex":"@article{Santos_Esser_Cardona_Schmidt_Bechstedt_1995, title={Optical properties of Sb-terminated GaAs and InP (110) surfaces}, volume={52}, DOI={<a href=\"https://doi.org/10.1103/physrevb.52.12158\">10.1103/physrevb.52.12158</a>}, number={16}, journal={Physical Review B}, author={Santos, Paulo V. and Esser, N. and Cardona, M. and Schmidt, Wolf Gero and Bechstedt, F.}, year={1995}, pages={12158–12167} }","mla":"Santos, Paulo V., et al. “Optical Properties of Sb-Terminated GaAs and InP (110) Surfaces.” <i>Physical Review B</i>, vol. 52, no. 16, 1995, pp. 12158–67, doi:<a href=\"https://doi.org/10.1103/physrevb.52.12158\">10.1103/physrevb.52.12158</a>.","apa":"Santos, P. V., Esser, N., Cardona, M., Schmidt, W. G., &#38; Bechstedt, F. (1995). Optical properties of Sb-terminated GaAs and InP (110) surfaces. <i>Physical Review B</i>, <i>52</i>(16), 12158–12167. <a href=\"https://doi.org/10.1103/physrevb.52.12158\">https://doi.org/10.1103/physrevb.52.12158</a>"},"year":"1995","issue":"16","publication_identifier":{"issn":["0163-1829","1095-3795"]},"publication_status":"published","doi":"10.1103/physrevb.52.12158","title":"Optical properties of Sb-terminated GaAs and InP (110) surfaces","volume":52,"date_created":"2019-10-10T16:21:14Z","author":[{"last_name":"Santos","full_name":"Santos, Paulo V.","first_name":"Paulo V."},{"full_name":"Esser, N.","last_name":"Esser","first_name":"N."},{"last_name":"Cardona","full_name":"Cardona, M.","first_name":"M."},{"last_name":"Schmidt","orcid":"0000-0002-2717-5076","id":"468","full_name":"Schmidt, Wolf Gero","first_name":"Wolf Gero"},{"first_name":"F.","full_name":"Bechstedt, F.","last_name":"Bechstedt"}],"date_updated":"2025-12-16T07:27:18Z","status":"public","publication":"Physical Review B","type":"journal_article","language":[{"iso":"eng"}],"department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"user_id":"16199","_id":"13797"},{"title":"Se/GaAs(110): energetics and structure","doi":"10.1016/0039-6028(95)00317-7","date_updated":"2025-12-16T07:26:36Z","author":[{"first_name":"Wolf Gero","id":"468","full_name":"Schmidt, Wolf Gero","orcid":"0000-0002-2717-5076","last_name":"Schmidt"},{"first_name":"Friedhelm","full_name":"Bechstedt, Friedhelm","last_name":"Bechstedt"}],"date_created":"2019-10-10T16:30:16Z","volume":"331-333","year":"1995","citation":{"apa":"Schmidt, W. G., &#38; Bechstedt, F. (1995). Se/GaAs(110): energetics and structure. <i>Surface Science</i>, <i>331–333</i>(Part A), 557–563. <a href=\"https://doi.org/10.1016/0039-6028(95)00317-7\">https://doi.org/10.1016/0039-6028(95)00317-7</a>","bibtex":"@article{Schmidt_Bechstedt_1995, title={Se/GaAs(110): energetics and structure}, volume={331–333}, DOI={<a href=\"https://doi.org/10.1016/0039-6028(95)00317-7\">10.1016/0039-6028(95)00317-7</a>}, number={Part A}, journal={Surface Science}, author={Schmidt, Wolf Gero and Bechstedt, Friedhelm}, year={1995}, pages={557–563} }","mla":"Schmidt, Wolf Gero, and Friedhelm Bechstedt. “Se/GaAs(110): Energetics and Structure.” <i>Surface Science</i>, vol. 331–333, no. Part A, 1995, pp. 557–63, doi:<a href=\"https://doi.org/10.1016/0039-6028(95)00317-7\">10.1016/0039-6028(95)00317-7</a>.","short":"W.G. Schmidt, F. Bechstedt, Surface Science 331–333 (1995) 557–563.","ama":"Schmidt WG, Bechstedt F. Se/GaAs(110): energetics and structure. <i>Surface Science</i>. 1995;331-333(Part A):557-563. doi:<a href=\"https://doi.org/10.1016/0039-6028(95)00317-7\">10.1016/0039-6028(95)00317-7</a>","chicago":"Schmidt, Wolf Gero, and Friedhelm Bechstedt. “Se/GaAs(110): Energetics and Structure.” <i>Surface Science</i> 331–333, no. Part A (1995): 557–63. <a href=\"https://doi.org/10.1016/0039-6028(95)00317-7\">https://doi.org/10.1016/0039-6028(95)00317-7</a>.","ieee":"W. G. Schmidt and F. Bechstedt, “Se/GaAs(110): energetics and structure,” <i>Surface Science</i>, vol. 331–333, no. Part A, pp. 557–563, 1995, doi: <a href=\"https://doi.org/10.1016/0039-6028(95)00317-7\">10.1016/0039-6028(95)00317-7</a>."},"page":"557-563","publication_status":"published","publication_identifier":{"issn":["0039-6028"]},"issue":"Part A","language":[{"iso":"eng"}],"funded_apc":"1","_id":"13799","user_id":"16199","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"status":"public","type":"journal_article","publication":"Surface Science"},{"status":"public","publication":"Physical Review B","type":"journal_article","language":[{"iso":"eng"}],"_id":"13850","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"user_id":"16199","year":"1995","intvolume":"        50","page":"17697-17700","citation":{"apa":"Kress, C., Fiedler, M., Schmidt, W. G., &#38; Bechstedt, F. (1995). Geometrical and electronic structure of the reconstructed diamond (100) surface. <i>Physical Review B</i>, <i>50</i>(23), 17697–17700. <a href=\"https://doi.org/10.1103/physrevb.50.17697\">https://doi.org/10.1103/physrevb.50.17697</a>","short":"C. Kress, M. Fiedler, W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17697–17700.","bibtex":"@article{Kress_Fiedler_Schmidt_Bechstedt_1995, title={Geometrical and electronic structure of the reconstructed diamond (100) surface}, volume={50}, DOI={<a href=\"https://doi.org/10.1103/physrevb.50.17697\">10.1103/physrevb.50.17697</a>}, number={23}, journal={Physical Review B}, author={Kress, C. and Fiedler, M. and Schmidt, Wolf Gero and Bechstedt, F.}, year={1995}, pages={17697–17700} }","mla":"Kress, C., et al. “Geometrical and Electronic Structure of the Reconstructed Diamond (100) Surface.” <i>Physical Review B</i>, vol. 50, no. 23, 1995, pp. 17697–700, doi:<a href=\"https://doi.org/10.1103/physrevb.50.17697\">10.1103/physrevb.50.17697</a>.","ieee":"C. Kress, M. Fiedler, W. G. Schmidt, and F. Bechstedt, “Geometrical and electronic structure of the reconstructed diamond (100) surface,” <i>Physical Review B</i>, vol. 50, no. 23, pp. 17697–17700, 1995, doi: <a href=\"https://doi.org/10.1103/physrevb.50.17697\">10.1103/physrevb.50.17697</a>.","chicago":"Kress, C., M. Fiedler, Wolf Gero Schmidt, and F. Bechstedt. “Geometrical and Electronic Structure of the Reconstructed Diamond (100) Surface.” <i>Physical Review B</i> 50, no. 23 (1995): 17697–700. <a href=\"https://doi.org/10.1103/physrevb.50.17697\">https://doi.org/10.1103/physrevb.50.17697</a>.","ama":"Kress C, Fiedler M, Schmidt WG, Bechstedt F. Geometrical and electronic structure of the reconstructed diamond (100) surface. <i>Physical Review B</i>. 1995;50(23):17697-17700. doi:<a href=\"https://doi.org/10.1103/physrevb.50.17697\">10.1103/physrevb.50.17697</a>"},"publication_identifier":{"issn":["0163-1829","1095-3795"]},"publication_status":"published","issue":"23","title":"Geometrical and electronic structure of the reconstructed diamond (100) surface","doi":"10.1103/physrevb.50.17697","date_updated":"2025-12-16T07:39:18Z","volume":50,"date_created":"2019-10-15T09:56:32Z","author":[{"last_name":"Kress","full_name":"Kress, C.","first_name":"C."},{"first_name":"M.","last_name":"Fiedler","full_name":"Fiedler, M."},{"first_name":"Wolf Gero","last_name":"Schmidt","orcid":"0000-0002-2717-5076","id":"468","full_name":"Schmidt, Wolf Gero"},{"first_name":"F.","last_name":"Bechstedt","full_name":"Bechstedt, F."}]},{"type":"journal_article","publication":"Surface Science","status":"public","_id":"13800","user_id":"16199","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"language":[{"iso":"eng"}],"funded_apc":"1","publication_status":"published","publication_identifier":{"issn":["0039-6028"]},"year":"1995","citation":{"apa":"Kress, C., Fiedler, M., Schmidt, W. G., &#38; Bechstedt, F. (1995). Quasi-particle band structure of C(111)2 × 1 and C(100)2 × 1 surfaces. <i>Surface Science</i>, <i>331–333</i>, 1152–1156. <a href=\"https://doi.org/10.1016/0039-6028(95)00160-3\">https://doi.org/10.1016/0039-6028(95)00160-3</a>","bibtex":"@article{Kress_Fiedler_Schmidt_Bechstedt_1995, title={Quasi-particle band structure of C(111)2 × 1 and C(100)2 × 1 surfaces}, volume={331–333}, DOI={<a href=\"https://doi.org/10.1016/0039-6028(95)00160-3\">10.1016/0039-6028(95)00160-3</a>}, journal={Surface Science}, author={Kress, Clemens and Fiedler, Marion and Schmidt, Wolf Gero and Bechstedt, Friedhelm}, year={1995}, pages={1152–1156} }","mla":"Kress, Clemens, et al. “Quasi-Particle Band Structure of C(111)2 × 1 and C(100)2 × 1 Surfaces.” <i>Surface Science</i>, vol. 331–333, 1995, pp. 1152–56, doi:<a href=\"https://doi.org/10.1016/0039-6028(95)00160-3\">10.1016/0039-6028(95)00160-3</a>.","short":"C. Kress, M. Fiedler, W.G. Schmidt, F. Bechstedt, Surface Science 331–333 (1995) 1152–1156.","ama":"Kress C, Fiedler M, Schmidt WG, Bechstedt F. Quasi-particle band structure of C(111)2 × 1 and C(100)2 × 1 surfaces. <i>Surface Science</i>. 1995;331-333:1152-1156. doi:<a href=\"https://doi.org/10.1016/0039-6028(95)00160-3\">10.1016/0039-6028(95)00160-3</a>","ieee":"C. Kress, M. Fiedler, W. G. Schmidt, and F. Bechstedt, “Quasi-particle band structure of C(111)2 × 1 and C(100)2 × 1 surfaces,” <i>Surface Science</i>, vol. 331–333, pp. 1152–1156, 1995, doi: <a href=\"https://doi.org/10.1016/0039-6028(95)00160-3\">10.1016/0039-6028(95)00160-3</a>.","chicago":"Kress, Clemens, Marion Fiedler, Wolf Gero Schmidt, and Friedhelm Bechstedt. “Quasi-Particle Band Structure of C(111)2 × 1 and C(100)2 × 1 Surfaces.” <i>Surface Science</i> 331–333 (1995): 1152–56. <a href=\"https://doi.org/10.1016/0039-6028(95)00160-3\">https://doi.org/10.1016/0039-6028(95)00160-3</a>."},"page":"1152-1156","date_updated":"2025-12-16T07:40:13Z","author":[{"full_name":"Kress, Clemens","last_name":"Kress","first_name":"Clemens"},{"last_name":"Fiedler","full_name":"Fiedler, Marion","first_name":"Marion"},{"id":"468","full_name":"Schmidt, Wolf Gero","last_name":"Schmidt","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero"},{"first_name":"Friedhelm","full_name":"Bechstedt, Friedhelm","last_name":"Bechstedt"}],"date_created":"2019-10-10T16:32:35Z","volume":"331-333","title":"Quasi-particle band structure of C(111)2 × 1 and C(100)2 × 1 surfaces","doi":"10.1016/0039-6028(95)00160-3"},{"doi":"10.1103/physrevb.50.17651","title":"Exchange reactions versus adsorption geometries for Se/GaAs(110)","volume":50,"author":[{"orcid":"0000-0002-2717-5076","last_name":"Schmidt","id":"468","full_name":"Schmidt, Wolf Gero","first_name":"Wolf Gero"},{"full_name":"Bechstedt, F.","last_name":"Bechstedt","first_name":"F."}],"date_created":"2019-10-15T09:59:11Z","date_updated":"2025-12-16T07:38:47Z","intvolume":"        50","page":"17651-17654","citation":{"bibtex":"@article{Schmidt_Bechstedt_1995, title={Exchange reactions versus adsorption geometries for Se/GaAs(110)}, volume={50}, DOI={<a href=\"https://doi.org/10.1103/physrevb.50.17651\">10.1103/physrevb.50.17651</a>}, number={23}, journal={Physical Review B}, author={Schmidt, Wolf Gero and Bechstedt, F.}, year={1995}, pages={17651–17654} }","mla":"Schmidt, Wolf Gero, and F. Bechstedt. “Exchange Reactions versus Adsorption Geometries for Se/GaAs(110).” <i>Physical Review B</i>, vol. 50, no. 23, 1995, pp. 17651–54, doi:<a href=\"https://doi.org/10.1103/physrevb.50.17651\">10.1103/physrevb.50.17651</a>.","short":"W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17651–17654.","apa":"Schmidt, W. G., &#38; Bechstedt, F. (1995). Exchange reactions versus adsorption geometries for Se/GaAs(110). <i>Physical Review B</i>, <i>50</i>(23), 17651–17654. <a href=\"https://doi.org/10.1103/physrevb.50.17651\">https://doi.org/10.1103/physrevb.50.17651</a>","ama":"Schmidt WG, Bechstedt F. Exchange reactions versus adsorption geometries for Se/GaAs(110). <i>Physical Review B</i>. 1995;50(23):17651-17654. doi:<a href=\"https://doi.org/10.1103/physrevb.50.17651\">10.1103/physrevb.50.17651</a>","chicago":"Schmidt, Wolf Gero, and F. Bechstedt. “Exchange Reactions versus Adsorption Geometries for Se/GaAs(110).” <i>Physical Review B</i> 50, no. 23 (1995): 17651–54. <a href=\"https://doi.org/10.1103/physrevb.50.17651\">https://doi.org/10.1103/physrevb.50.17651</a>.","ieee":"W. G. Schmidt and F. Bechstedt, “Exchange reactions versus adsorption geometries for Se/GaAs(110),” <i>Physical Review B</i>, vol. 50, no. 23, pp. 17651–17654, 1995, doi: <a href=\"https://doi.org/10.1103/physrevb.50.17651\">10.1103/physrevb.50.17651</a>."},"year":"1995","issue":"23","publication_identifier":{"issn":["0163-1829","1095-3795"]},"publication_status":"published","language":[{"iso":"eng"}],"department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"user_id":"16199","_id":"13851","status":"public","publication":"Physical Review B","type":"journal_article"},{"issue":"Part A","publication_status":"published","publication_identifier":{"issn":["0039-6028"]},"citation":{"short":"W.G. Schmidt, G.P. Srivastava, Surface Science 331–333 (1995) 540–545.","bibtex":"@article{Schmidt_Srivastava_1995, title={III-V(110)/Sb(1 ML): structural and dynamical properties}, volume={331–333}, DOI={<a href=\"https://doi.org/10.1016/0039-6028(95)00304-5\">10.1016/0039-6028(95)00304-5</a>}, number={Part A}, journal={Surface Science}, author={Schmidt, Wolf Gero and Srivastava, G.P.}, year={1995}, pages={540–545} }","mla":"Schmidt, Wolf Gero, and G. P. Srivastava. “III-V(110)/Sb(1 ML): Structural and Dynamical Properties.” <i>Surface Science</i>, vol. 331–333, no. Part A, 1995, pp. 540–45, doi:<a href=\"https://doi.org/10.1016/0039-6028(95)00304-5\">10.1016/0039-6028(95)00304-5</a>.","apa":"Schmidt, W. G., &#38; Srivastava, G. P. (1995). III-V(110)/Sb(1 ML): structural and dynamical properties. <i>Surface Science</i>, <i>331–333</i>(Part A), 540–545. <a href=\"https://doi.org/10.1016/0039-6028(95)00304-5\">https://doi.org/10.1016/0039-6028(95)00304-5</a>","chicago":"Schmidt, Wolf Gero, and G.P. Srivastava. “III-V(110)/Sb(1 ML): Structural and Dynamical Properties.” <i>Surface Science</i> 331–333, no. Part A (1995): 540–45. <a href=\"https://doi.org/10.1016/0039-6028(95)00304-5\">https://doi.org/10.1016/0039-6028(95)00304-5</a>.","ieee":"W. G. Schmidt and G. P. Srivastava, “III-V(110)/Sb(1 ML): structural and dynamical properties,” <i>Surface Science</i>, vol. 331–333, no. Part A, pp. 540–545, 1995, doi: <a href=\"https://doi.org/10.1016/0039-6028(95)00304-5\">10.1016/0039-6028(95)00304-5</a>.","ama":"Schmidt WG, Srivastava GP. III-V(110)/Sb(1 ML): structural and dynamical properties. <i>Surface Science</i>. 1995;331-333(Part A):540-545. doi:<a href=\"https://doi.org/10.1016/0039-6028(95)00304-5\">10.1016/0039-6028(95)00304-5</a>"},"page":"540-545","year":"1995","author":[{"first_name":"Wolf Gero","full_name":"Schmidt, Wolf Gero","id":"468","orcid":"0000-0002-2717-5076","last_name":"Schmidt"},{"first_name":"G.P.","full_name":"Srivastava, G.P.","last_name":"Srivastava"}],"date_created":"2019-10-10T16:34:12Z","volume":"331-333","date_updated":"2025-12-16T07:39:35Z","doi":"10.1016/0039-6028(95)00304-5","title":"III-V(110)/Sb(1 ML): structural and dynamical properties","type":"journal_article","publication":"Surface Science","status":"public","user_id":"16199","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"_id":"13801","language":[{"iso":"eng"}],"funded_apc":"1"},{"language":[{"iso":"eng"}],"_id":"13852","user_id":"16199","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"status":"public","type":"journal_article","publication":"Physical Review B","title":"Se/GaAs(110): Atomic and electronic structure","doi":"10.1103/physrevb.50.17280","date_updated":"2025-12-16T07:38:28Z","date_created":"2019-10-15T10:00:45Z","author":[{"first_name":"Wolf Gero","orcid":"0000-0002-2717-5076","last_name":"Schmidt","id":"468","full_name":"Schmidt, Wolf Gero"},{"full_name":"Bechstedt, F.","last_name":"Bechstedt","first_name":"F."}],"volume":50,"year":"1995","citation":{"ieee":"W. G. Schmidt and F. Bechstedt, “Se/GaAs(110): Atomic and electronic structure,” <i>Physical Review B</i>, vol. 50, no. 23, pp. 17280–17291, 1995, doi: <a href=\"https://doi.org/10.1103/physrevb.50.17280\">10.1103/physrevb.50.17280</a>.","chicago":"Schmidt, Wolf Gero, and F. Bechstedt. “Se/GaAs(110): Atomic and Electronic Structure.” <i>Physical Review B</i> 50, no. 23 (1995): 17280–91. <a href=\"https://doi.org/10.1103/physrevb.50.17280\">https://doi.org/10.1103/physrevb.50.17280</a>.","ama":"Schmidt WG, Bechstedt F. Se/GaAs(110): Atomic and electronic structure. <i>Physical Review B</i>. 1995;50(23):17280-17291. doi:<a href=\"https://doi.org/10.1103/physrevb.50.17280\">10.1103/physrevb.50.17280</a>","apa":"Schmidt, W. G., &#38; Bechstedt, F. (1995). Se/GaAs(110): Atomic and electronic structure. <i>Physical Review B</i>, <i>50</i>(23), 17280–17291. <a href=\"https://doi.org/10.1103/physrevb.50.17280\">https://doi.org/10.1103/physrevb.50.17280</a>","bibtex":"@article{Schmidt_Bechstedt_1995, title={Se/GaAs(110): Atomic and electronic structure}, volume={50}, DOI={<a href=\"https://doi.org/10.1103/physrevb.50.17280\">10.1103/physrevb.50.17280</a>}, number={23}, journal={Physical Review B}, author={Schmidt, Wolf Gero and Bechstedt, F.}, year={1995}, pages={17280–17291} }","mla":"Schmidt, Wolf Gero, and F. Bechstedt. “Se/GaAs(110): Atomic and Electronic Structure.” <i>Physical Review B</i>, vol. 50, no. 23, 1995, pp. 17280–91, doi:<a href=\"https://doi.org/10.1103/physrevb.50.17280\">10.1103/physrevb.50.17280</a>.","short":"W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17280–17291."},"intvolume":"        50","page":"17280-17291","publication_status":"published","publication_identifier":{"issn":["0163-1829","1095-3795"]},"issue":"23"},{"department":[{"_id":"293"}],"user_id":"49063","_id":"43593","extern":"1","type":"journal_article","status":"public","volume":49,"author":[{"orcid":"0000-0001-8864-2072","last_name":"Meier","full_name":"Meier, Torsten","id":"344","first_name":"Torsten"},{"first_name":"G.","last_name":"von Plessen","full_name":"von Plessen, G."},{"full_name":"Feldmann, J.","last_name":"Feldmann","first_name":"J."},{"full_name":"Göbel, E.O.","last_name":"Göbel","first_name":"E.O."},{"last_name":"Thomas","full_name":"Thomas, P.","first_name":"P."},{"full_name":"Goosen, K.W.","last_name":"Goosen","first_name":"K.W."},{"full_name":"Kuo, J.M.","last_name":"Kuo","first_name":"J.M."},{"first_name":"R.F.","last_name":"Kopf","full_name":"Kopf, R.F."}],"date_updated":"2023-04-14T23:25:32Z","doi":"10.1103/PhysRevB.49.14058","main_file_link":[{"url":"https://journals.aps.org/prb/abstract/10.1103/PhysRevB.49.14058"}],"publication_status":"published","page":"14058-14061","intvolume":"        49","citation":{"short":"T. Meier, G. von Plessen, J. Feldmann, E.O. Göbel, P. Thomas, K.W. Goosen, J.M. Kuo, R.F. Kopf, Physical Review B 49 (1994) 14058–14061.","bibtex":"@article{Meier_von Plessen_Feldmann_Göbel_Thomas_Goosen_Kuo_Kopf_1994, title={Influence of scattering on the formation of Wannier-Stark ladders and Bloch oscillations in semiconductor superlattices}, volume={49}, DOI={<a href=\"https://doi.org/10.1103/PhysRevB.49.14058\">10.1103/PhysRevB.49.14058</a>}, number={19}, journal={Physical Review B}, publisher={American Physical Society}, author={Meier, Torsten and von Plessen, G. and Feldmann, J. and Göbel, E.O. and Thomas, P. and Goosen, K.W. and Kuo, J.M. and Kopf, R.F.}, year={1994}, pages={14058–14061} }","mla":"Meier, Torsten, et al. “Influence of Scattering on the Formation of Wannier-Stark Ladders and Bloch Oscillations in Semiconductor Superlattices.” <i>Physical Review B</i>, vol. 49, no. 19, American Physical Society, 1994, pp. 14058–61, doi:<a href=\"https://doi.org/10.1103/PhysRevB.49.14058\">10.1103/PhysRevB.49.14058</a>.","apa":"Meier, T., von Plessen, G., Feldmann, J., Göbel, E. O., Thomas, P., Goosen, K. W., Kuo, J. M., &#38; Kopf, R. F. (1994). Influence of scattering on the formation of Wannier-Stark ladders and Bloch oscillations in semiconductor superlattices. <i>Physical Review B</i>, <i>49</i>(19), 14058–14061. <a href=\"https://doi.org/10.1103/PhysRevB.49.14058\">https://doi.org/10.1103/PhysRevB.49.14058</a>","ama":"Meier T, von Plessen G, Feldmann J, et al. Influence of scattering on the formation of Wannier-Stark ladders and Bloch oscillations in semiconductor superlattices. <i>Physical Review B</i>. 1994;49(19):14058-14061. doi:<a href=\"https://doi.org/10.1103/PhysRevB.49.14058\">10.1103/PhysRevB.49.14058</a>","ieee":"T. Meier <i>et al.</i>, “Influence of scattering on the formation of Wannier-Stark ladders and Bloch oscillations in semiconductor superlattices,” <i>Physical Review B</i>, vol. 49, no. 19, pp. 14058–14061, 1994, doi: <a href=\"https://doi.org/10.1103/PhysRevB.49.14058\">10.1103/PhysRevB.49.14058</a>.","chicago":"Meier, Torsten, G. von Plessen, J. Feldmann, E.O. Göbel, P. Thomas, K.W. Goosen, J.M. Kuo, and R.F. Kopf. “Influence of Scattering on the Formation of Wannier-Stark Ladders and Bloch Oscillations in Semiconductor Superlattices.” <i>Physical Review B</i> 49, no. 19 (1994): 14058–61. <a href=\"https://doi.org/10.1103/PhysRevB.49.14058\">https://doi.org/10.1103/PhysRevB.49.14058</a>."},"language":[{"iso":"eng"}],"publication":"Physical Review B","abstract":[{"text":"We study the critical field for the formation of Wannier-Stark ladders and Bloch oscillations in \r\nGaAs/AlxGa1−xAs superlattices at low temperatures. From the results of photocurrent and transient four-wave mixing experiments, we conclude that the critical field is higher for superlattices with wide minibands than for superlattices, with narrow minibands. The explanation for this dependence is that intraminiband scattering due to LO-phonon emission is excluded in minibands narrower than the LO-phonon energy.","lang":"eng"}],"date_created":"2023-04-14T23:25:30Z","publisher":"American Physical Society","title":"Influence of scattering on the formation of Wannier-Stark ladders and Bloch oscillations in semiconductor superlattices","issue":"19","year":"1994"},{"_id":"43592","user_id":"49063","department":[{"_id":"293"}],"extern":"1","language":[{"iso":"eng"}],"type":"journal_article","publication":"Physical Review Letters","abstract":[{"lang":"eng","text":"We present a microscopic analysis of coherent effects induced by electric fields in photoexcited semiconductors in the presence of the Coulomb interaction. Both the terahertz emission and four-wave-mixing signals arising from Bloch oscillations in a semiconductor superlattice are computed consistently. It is predicted that Bloch oscillations should be observable also for miniband widths on the order of the exciton binding energy."}],"status":"public","publisher":"American Physical Society","date_updated":"2023-04-14T23:22:44Z","author":[{"first_name":"Torsten","last_name":"Meier","orcid":"0000-0001-8864-2072","id":"344","full_name":"Meier, Torsten"},{"last_name":"von Plessen","full_name":"von Plessen, G.","first_name":"G."},{"first_name":"P.","full_name":"Thomas, P.","last_name":"Thomas"},{"last_name":"Koch","full_name":"Koch, S.W.","first_name":"S.W."}],"date_created":"2023-04-14T23:22:41Z","volume":73,"title":"Coherent electric-field effects in semiconductors","main_file_link":[{"url":"https://journals.aps.org/prl/abstract/10.1103/PhysRevLett.73.902"}],"doi":"10.1103/PhysRevLett.73.902","publication_status":"published","issue":"6","year":"1994","citation":{"short":"T. Meier, G. von Plessen, P. Thomas, S.W. Koch, Physical Review Letters 73 (1994) 902–905.","mla":"Meier, Torsten, et al. “Coherent Electric-Field Effects in Semiconductors.” <i>Physical Review Letters</i>, vol. 73, no. 6, American Physical Society, 1994, pp. 902–05, doi:<a href=\"https://doi.org/10.1103/PhysRevLett.73.902\">10.1103/PhysRevLett.73.902</a>.","bibtex":"@article{Meier_von Plessen_Thomas_Koch_1994, title={Coherent electric-field effects in semiconductors}, volume={73}, DOI={<a href=\"https://doi.org/10.1103/PhysRevLett.73.902\">10.1103/PhysRevLett.73.902</a>}, number={6}, journal={Physical Review Letters}, publisher={American Physical Society}, author={Meier, Torsten and von Plessen, G. and Thomas, P. and Koch, S.W.}, year={1994}, pages={902–905} }","apa":"Meier, T., von Plessen, G., Thomas, P., &#38; Koch, S. W. (1994). Coherent electric-field effects in semiconductors. <i>Physical Review Letters</i>, <i>73</i>(6), 902–905. <a href=\"https://doi.org/10.1103/PhysRevLett.73.902\">https://doi.org/10.1103/PhysRevLett.73.902</a>","chicago":"Meier, Torsten, G. von Plessen, P. Thomas, and S.W. Koch. “Coherent Electric-Field Effects in Semiconductors.” <i>Physical Review Letters</i> 73, no. 6 (1994): 902–5. <a href=\"https://doi.org/10.1103/PhysRevLett.73.902\">https://doi.org/10.1103/PhysRevLett.73.902</a>.","ieee":"T. Meier, G. von Plessen, P. Thomas, and S. W. Koch, “Coherent electric-field effects in semiconductors,” <i>Physical Review Letters</i>, vol. 73, no. 6, pp. 902–905, 1994, doi: <a href=\"https://doi.org/10.1103/PhysRevLett.73.902\">10.1103/PhysRevLett.73.902</a>.","ama":"Meier T, von Plessen G, Thomas P, Koch SW. Coherent electric-field effects in semiconductors. <i>Physical Review Letters</i>. 1994;73(6):902-905. doi:<a href=\"https://doi.org/10.1103/PhysRevLett.73.902\">10.1103/PhysRevLett.73.902</a>"},"intvolume":"        73","page":"902-905"},{"type":"conference","status":"public","department":[{"_id":"293"}],"user_id":"49063","series_title":"Semiconductor science and technology","_id":"43450","extern":"1","publication_status":"published","intvolume":"         9","page":"1965-1971","citation":{"ama":"Meier T, Koch M, Feldmann J, et al. Coherent Dynamics of Exciton Wavepackets in Semiconductor Heterostructures. In: <i>Proceedings Der 8. International Winterschool on New Developments in Physics</i>. Vol 9. Semiconductor science and technology. IOP Publishing; 1994:1965-1971. doi:<a href=\"https://doi.org/10.1088/0268-1242/9/11S/018\">10.1088/0268-1242/9/11S/018</a>","chicago":"Meier, Torsten, M. Koch, J. Feldmann, E.O. Göbel, F. Jahnke, W. Schäfer, P. Thomas, et al. “Coherent Dynamics of Exciton Wavepackets in Semiconductor Heterostructures.” In <i>Proceedings Der 8. International Winterschool on New Developments in Physics</i>, 9:1965–71. Semiconductor Science and Technology. IOP Publishing, 1994. <a href=\"https://doi.org/10.1088/0268-1242/9/11S/018\">https://doi.org/10.1088/0268-1242/9/11S/018</a>.","ieee":"T. Meier <i>et al.</i>, “Coherent Dynamics of Exciton Wavepackets in Semiconductor Heterostructures,” in <i>Proceedings der 8. International Winterschool on New Developments in Physics</i>, Mauterndorf, 1994, vol. 9, no. 11S, pp. 1965–1971, doi: <a href=\"https://doi.org/10.1088/0268-1242/9/11S/018\">10.1088/0268-1242/9/11S/018</a>.","apa":"Meier, T., Koch, M., Feldmann, J., Göbel, E. O., Jahnke, F., Schäfer, W., Thomas, P., Koch, S. W., Nickel, H., Luttgen, S., &#38; Stolz, W. (1994). Coherent Dynamics of Exciton Wavepackets in Semiconductor Heterostructures. <i>Proceedings Der 8. International Winterschool on New Developments in Physics</i>, <i>9</i>(11S), 1965–1971. <a href=\"https://doi.org/10.1088/0268-1242/9/11S/018\">https://doi.org/10.1088/0268-1242/9/11S/018</a>","short":"T. Meier, M. Koch, J. Feldmann, E.O. Göbel, F. Jahnke, W. Schäfer, P. Thomas, S.W. Koch, H. Nickel, S. Luttgen, W. Stolz, in: Proceedings Der 8. International Winterschool on New Developments in Physics, IOP Publishing, 1994, pp. 1965–1971.","mla":"Meier, Torsten, et al. “Coherent Dynamics of Exciton Wavepackets in Semiconductor Heterostructures.” <i>Proceedings Der 8. International Winterschool on New Developments in Physics</i>, vol. 9, no. 11S, IOP Publishing, 1994, pp. 1965–71, doi:<a href=\"https://doi.org/10.1088/0268-1242/9/11S/018\">10.1088/0268-1242/9/11S/018</a>.","bibtex":"@inproceedings{Meier_Koch_Feldmann_Göbel_Jahnke_Schäfer_Thomas_Koch_Nickel_Luttgen_et al._1994, series={Semiconductor science and technology}, title={Coherent Dynamics of Exciton Wavepackets in Semiconductor Heterostructures}, volume={9}, DOI={<a href=\"https://doi.org/10.1088/0268-1242/9/11S/018\">10.1088/0268-1242/9/11S/018</a>}, number={11S}, booktitle={Proceedings der 8. International Winterschool on New Developments in Physics}, publisher={IOP Publishing}, author={Meier, Torsten and Koch, M. and Feldmann, J. and Göbel, E.O. and Jahnke, F. and Schäfer, W. and Thomas, P. and Koch, S.W. and Nickel, H. and Luttgen, S. and et al.}, year={1994}, pages={1965–1971}, collection={Semiconductor science and technology} }"},"volume":9,"author":[{"last_name":"Meier","orcid":"0000-0001-8864-2072","id":"344","full_name":"Meier, Torsten","first_name":"Torsten"},{"first_name":"M.","full_name":"Koch, M.","last_name":"Koch"},{"last_name":"Feldmann","full_name":"Feldmann, J.","first_name":"J."},{"full_name":"Göbel, E.O.","last_name":"Göbel","first_name":"E.O."},{"first_name":"F.","last_name":"Jahnke","full_name":"Jahnke, F."},{"first_name":"W.","full_name":"Schäfer, W.","last_name":"Schäfer"},{"full_name":"Thomas, P.","last_name":"Thomas","first_name":"P."},{"last_name":"Koch","full_name":"Koch, S.W.","first_name":"S.W."},{"first_name":"H.","last_name":"Nickel","full_name":"Nickel, H."},{"full_name":"Luttgen, S.","last_name":"Luttgen","first_name":"S."},{"first_name":"W.","last_name":"Stolz","full_name":"Stolz, W."}],"date_updated":"2023-04-11T05:43:59Z","conference":{"location":"Mauterndorf"},"doi":"10.1088/0268-1242/9/11S/018","main_file_link":[{"url":"https://iopscience.iop.org/article/10.1088/0268-1242/9/11S/018/meta"}],"publication":"Proceedings der 8. International Winterschool on New Developments in Physics","abstract":[{"text":"The coherent dynamics of exciton wavepackets in (GaIn)As/GaAs as well as (GaIn)As/Ga(PAs) multiple quantum well structures is studied by means of transient four-wave mixing (FWM) experiments. The wavepackets are generated by simultaneous excitation of several exciton transitions with laser pulses of about 100 fs duration. The time-integrated FWM signals exhibit a pronounced modulation superimposed on the overall decay which can be attributed to the quantum interference of the different eigenstates. In the time-resolved FWM signals this interference is not present, reflecting the interplay between many-body Coulomb effects and inhomogeneous broadening. This experimental technique is then employed to extract the exciton binding energies in pseudomorphic symmetrically strained (GaIn)As/GaIPAs) with various In contents.","lang":"eng"}],"language":[{"iso":"eng"}],"issue":"11S","year":"1994","date_created":"2023-04-11T05:43:57Z","publisher":"IOP Publishing","title":"Coherent Dynamics of Exciton Wavepackets in Semiconductor Heterostructures"},{"abstract":[{"lang":"eng","text":"Since the realization of semiconductor heterostructures vertical transport of electrically injected carriers has been one of the most interesting topics in semiconductor physics. Precise engineering of semiconductor layers and thus electronic energy levels allows the tailoring of transport properties over a wide range and has even led to the invention of semiconductor devices relying on ballistic electron transport. In addition, negative differential resistance (NDR) can be realized by using tunneling diodes containing double-barrier heterostructures or a superlattice structure.5,6 Actually, the proposal of Esaki and Tsu5 to use electronic Bloch oscillations in the miniband of a semiconductor superlattice to realize NDR marked the starting point for the physics and applications of semiconductor heterostructures."}],"publication":"Coherent Optical Interactions in Semiconductors","language":[{"iso":"eng"}],"year":"1994","title":"Vertical transport studied by sub-picosecond four-wave mixing experiments","publisher":"Springer-Science+Business Media","date_created":"2023-04-14T23:50:07Z","editor":[{"full_name":"Phillips, R.T.","last_name":"Phillips","first_name":"R.T."}],"status":"public","type":"book_chapter","extern":"1","_id":"43598","department":[{"_id":"293"}],"series_title":"NATO ASI Series B330","user_id":"49063","place":"New York","page":"223-244","citation":{"mla":"Meier, Torsten, et al. “Vertical Transport Studied by Sub-Picosecond Four-Wave Mixing Experiments.” <i>Coherent Optical Interactions in Semiconductors</i>, edited by R.T. Phillips, Springer-Science+Business Media, 1994, pp. 223–44, doi:<a href=\"https://doi.org/10.1007/978-1-4757-9748-0_10\">10.1007/978-1-4757-9748-0_10</a>.","short":"T. Meier, J. Feldmann, G. von Plessen, P. Thomas, E.O. Göbel, K.W. Goosen, D.A.B. Miller, J.E. Cunningham, in: R.T. Phillips (Ed.), Coherent Optical Interactions in Semiconductors, Springer-Science+Business Media, New York, 1994, pp. 223–244.","bibtex":"@inbook{Meier_Feldmann_von Plessen_Thomas_Göbel_Goosen_Miller_Cunningham_1994, place={New York}, series={NATO ASI Series B330}, title={Vertical transport studied by sub-picosecond four-wave mixing experiments}, DOI={<a href=\"https://doi.org/10.1007/978-1-4757-9748-0_10\">10.1007/978-1-4757-9748-0_10</a>}, booktitle={Coherent Optical Interactions in Semiconductors}, publisher={Springer-Science+Business Media}, author={Meier, Torsten and Feldmann, J. and von Plessen, G. and Thomas, P. and Göbel, E.O. and Goosen, K.W. and Miller, D.A.B. and Cunningham, J.E.}, editor={Phillips, R.T.}, year={1994}, pages={223–244}, collection={NATO ASI Series B330} }","apa":"Meier, T., Feldmann, J., von Plessen, G., Thomas, P., Göbel, E. O., Goosen, K. W., Miller, D. A. B., &#38; Cunningham, J. E. (1994). Vertical transport studied by sub-picosecond four-wave mixing experiments. In R. T. Phillips (Ed.), <i>Coherent Optical Interactions in Semiconductors</i> (pp. 223–244). Springer-Science+Business Media. <a href=\"https://doi.org/10.1007/978-1-4757-9748-0_10\">https://doi.org/10.1007/978-1-4757-9748-0_10</a>","ama":"Meier T, Feldmann J, von Plessen G, et al. Vertical transport studied by sub-picosecond four-wave mixing experiments. In: Phillips RT, ed. <i>Coherent Optical Interactions in Semiconductors</i>. NATO ASI Series B330. Springer-Science+Business Media; 1994:223-244. doi:<a href=\"https://doi.org/10.1007/978-1-4757-9748-0_10\">10.1007/978-1-4757-9748-0_10</a>","ieee":"T. Meier <i>et al.</i>, “Vertical transport studied by sub-picosecond four-wave mixing experiments,” in <i>Coherent Optical Interactions in Semiconductors</i>, R. T. Phillips, Ed. New York: Springer-Science+Business Media, 1994, pp. 223–244.","chicago":"Meier, Torsten, J. Feldmann, G. von Plessen, P. Thomas, E.O. Göbel, K.W. Goosen, D.A.B. Miller, and J.E. Cunningham. “Vertical Transport Studied by Sub-Picosecond Four-Wave Mixing Experiments.” In <i>Coherent Optical Interactions in Semiconductors</i>, edited by R.T. Phillips, 223–44. NATO ASI Series B330. New York: Springer-Science+Business Media, 1994. <a href=\"https://doi.org/10.1007/978-1-4757-9748-0_10\">https://doi.org/10.1007/978-1-4757-9748-0_10</a>."},"publication_identifier":{"isbn":["978-1-4757-9750-3"]},"publication_status":"published","doi":"10.1007/978-1-4757-9748-0_10","main_file_link":[{"url":"https://link.springer.com/chapter/10.1007/978-1-4757-9748-0_10"}],"date_updated":"2023-04-14T23:50:10Z","author":[{"first_name":"Torsten","id":"344","full_name":"Meier, Torsten","last_name":"Meier","orcid":"0000-0001-8864-2072"},{"full_name":"Feldmann, J.","last_name":"Feldmann","first_name":"J."},{"first_name":"G.","last_name":"von Plessen","full_name":"von Plessen, G."},{"first_name":"P.","full_name":"Thomas, P.","last_name":"Thomas"},{"first_name":"E.O.","last_name":"Göbel","full_name":"Göbel, E.O."},{"first_name":"K.W.","full_name":"Goosen, K.W.","last_name":"Goosen"},{"full_name":"Miller, D.A.B.","last_name":"Miller","first_name":"D.A.B."},{"first_name":"J.E.","full_name":"Cunningham, J.E.","last_name":"Cunningham"}]},{"year":"1994","date_created":"2023-04-14T23:42:39Z","publisher":"Springer Science+Business Media","title":"Theory of polarization-dependent four-wave mixing using the optical Bloch equations","publication":"Coherent Optical Interactions in Semiconductors","abstract":[{"lang":"eng","text":"Transient four-wave mixing (TFWM) experiments have been widely used to study the excitation dynamics of excitons in quantum wells [1]. Recently is has been observed that TFWM signals, especially quantum beats between heavy-hole (hh) and light-hole (lh) excitons, strongly depend on the polarization of the incident laser pulses [2–6]. This dependence is presently being investigated."}],"language":[{"iso":"eng"}],"publication_identifier":{"eissn":["978-1-4757-9750-3"]},"publication_status":"published","page":"349-354","citation":{"ama":"Meier T, Bennhardt D, Thomas P, Hu YZ, Binder R, Koch SW. Theory of polarization-dependent four-wave mixing using the optical Bloch equations. In: Phillips RT, ed. <i>Coherent Optical Interactions in Semiconductors</i>. NATO ASI Series B330. Springer Science+Business Media; 1994:349-354. doi:<a href=\"https://doi.org/10.1007/978-1-4757-9748-0_26\">10.1007/978-1-4757-9748-0_26</a>","chicago":"Meier, Torsten, D. Bennhardt, P. Thomas, Y.Z. Hu, R. Binder, and S.W. Koch. “Theory of Polarization-Dependent Four-Wave Mixing Using the Optical Bloch Equations.” In <i>Coherent Optical Interactions in Semiconductors</i>, edited by R.T. Phillips, 349–54. NATO ASI Series B330. New York: Springer Science+Business Media, 1994. <a href=\"https://doi.org/10.1007/978-1-4757-9748-0_26\">https://doi.org/10.1007/978-1-4757-9748-0_26</a>.","ieee":"T. Meier, D. Bennhardt, P. Thomas, Y. Z. Hu, R. Binder, and S. W. Koch, “Theory of polarization-dependent four-wave mixing using the optical Bloch equations,” in <i>Coherent Optical Interactions in Semiconductors</i>, R. T. Phillips, Ed. New York: Springer Science+Business Media, 1994, pp. 349–354.","bibtex":"@inbook{Meier_Bennhardt_Thomas_Hu_Binder_Koch_1994, place={New York}, series={NATO ASI Series B330}, title={Theory of polarization-dependent four-wave mixing using the optical Bloch equations}, DOI={<a href=\"https://doi.org/10.1007/978-1-4757-9748-0_26\">10.1007/978-1-4757-9748-0_26</a>}, booktitle={Coherent Optical Interactions in Semiconductors}, publisher={Springer Science+Business Media}, author={Meier, Torsten and Bennhardt, D. and Thomas, P. and Hu, Y.Z. and Binder, R. and Koch, S.W.}, editor={Phillips, R.T.}, year={1994}, pages={349–354}, collection={NATO ASI Series B330} }","mla":"Meier, Torsten, et al. “Theory of Polarization-Dependent Four-Wave Mixing Using the Optical Bloch Equations.” <i>Coherent Optical Interactions in Semiconductors</i>, edited by R.T. Phillips, Springer Science+Business Media, 1994, pp. 349–54, doi:<a href=\"https://doi.org/10.1007/978-1-4757-9748-0_26\">10.1007/978-1-4757-9748-0_26</a>.","short":"T. Meier, D. Bennhardt, P. Thomas, Y.Z. Hu, R. Binder, S.W. Koch, in: R.T. Phillips (Ed.), Coherent Optical Interactions in Semiconductors, Springer Science+Business Media, New York, 1994, pp. 349–354.","apa":"Meier, T., Bennhardt, D., Thomas, P., Hu, Y. Z., Binder, R., &#38; Koch, S. W. (1994). Theory of polarization-dependent four-wave mixing using the optical Bloch equations. In R. T. Phillips (Ed.), <i>Coherent Optical Interactions in Semiconductors</i> (pp. 349–354). Springer Science+Business Media. <a href=\"https://doi.org/10.1007/978-1-4757-9748-0_26\">https://doi.org/10.1007/978-1-4757-9748-0_26</a>"},"place":"New York","author":[{"first_name":"Torsten","id":"344","full_name":"Meier, Torsten","orcid":"0000-0001-8864-2072","last_name":"Meier"},{"first_name":"D.","full_name":"Bennhardt, D.","last_name":"Bennhardt"},{"first_name":"P.","last_name":"Thomas","full_name":"Thomas, P."},{"first_name":"Y.Z.","last_name":"Hu","full_name":"Hu, Y.Z."},{"full_name":"Binder, R.","last_name":"Binder","first_name":"R."},{"full_name":"Koch, S.W.","last_name":"Koch","first_name":"S.W."}],"date_updated":"2023-04-14T23:42:42Z","doi":"10.1007/978-1-4757-9748-0_26","main_file_link":[{"url":"https://link.springer.com/chapter/10.1007/978-1-4757-9748-0_26"}],"type":"book_chapter","status":"public","editor":[{"full_name":"Phillips, R.T.","last_name":"Phillips","first_name":"R.T."}],"department":[{"_id":"293"}],"series_title":"NATO ASI Series B330","user_id":"49063","_id":"43597","extern":"1"},{"publisher":"American Physical Society","date_updated":"2023-04-14T23:30:22Z","volume":50,"date_created":"2023-04-14T23:30:20Z","author":[{"first_name":"Torsten","full_name":"Meier, Torsten","id":"344","orcid":"0000-0001-8864-2072","last_name":"Meier"},{"last_name":"Mayer","full_name":"Mayer, E.J.","first_name":"E.J."},{"last_name":"Heuckeroth","full_name":"Heuckeroth, V.","first_name":"V."},{"full_name":"Smith, G.O.","last_name":"Smith","first_name":"G.O."},{"full_name":"Kuhl, J.","last_name":"Kuhl","first_name":"J."},{"first_name":"K.","full_name":"Bott, K.","last_name":"Bott"},{"full_name":"Schulze, A.","last_name":"Schulze","first_name":"A."},{"last_name":"Bennhardt","full_name":"Bennhardt, D.","first_name":"D."},{"first_name":"S.W.","last_name":"Koch","full_name":"Koch, S.W."},{"full_name":"Thomas, P.","last_name":"Thomas","first_name":"P."},{"last_name":"Hey","full_name":"Hey, R.","first_name":"R."},{"full_name":"Ploog, K.","last_name":"Ploog","first_name":"K."}],"title":"Evidence of Biexcitonic Contributions to Four-wave-mixing in GaAs Quantum Wells","doi":"10.1103/PhysRevB.50.14730","main_file_link":[{"url":"https://journals.aps.org/prb/abstract/10.1103/PhysRevB.50.14730"}],"publication_status":"published","issue":"19","year":"1994","intvolume":"        50","page":"14730-14733","citation":{"apa":"Meier, T., Mayer, E. J., Heuckeroth, V., Smith, G. O., Kuhl, J., Bott, K., Schulze, A., Bennhardt, D., Koch, S. W., Thomas, P., Hey, R., &#38; Ploog, K. (1994). Evidence of Biexcitonic Contributions to Four-wave-mixing in GaAs Quantum Wells. <i>Physical Review B</i>, <i>50</i>(19), 14730–14733. <a href=\"https://doi.org/10.1103/PhysRevB.50.14730\">https://doi.org/10.1103/PhysRevB.50.14730</a>","mla":"Meier, Torsten, et al. “Evidence of Biexcitonic Contributions to Four-Wave-Mixing in GaAs Quantum Wells.” <i>Physical Review B</i>, vol. 50, no. 19, American Physical Society, 1994, pp. 14730–33, doi:<a href=\"https://doi.org/10.1103/PhysRevB.50.14730\">10.1103/PhysRevB.50.14730</a>.","short":"T. Meier, E.J. Mayer, V. Heuckeroth, G.O. Smith, J. Kuhl, K. Bott, A. Schulze, D. Bennhardt, S.W. Koch, P. Thomas, R. Hey, K. Ploog, Physical Review B 50 (1994) 14730–14733.","bibtex":"@article{Meier_Mayer_Heuckeroth_Smith_Kuhl_Bott_Schulze_Bennhardt_Koch_Thomas_et al._1994, title={Evidence of Biexcitonic Contributions to Four-wave-mixing in GaAs Quantum Wells}, volume={50}, DOI={<a href=\"https://doi.org/10.1103/PhysRevB.50.14730\">10.1103/PhysRevB.50.14730</a>}, number={19}, journal={Physical Review B}, publisher={American Physical Society}, author={Meier, Torsten and Mayer, E.J. and Heuckeroth, V. and Smith, G.O. and Kuhl, J. and Bott, K. and Schulze, A. and Bennhardt, D. and Koch, S.W. and Thomas, P. and et al.}, year={1994}, pages={14730–14733} }","ama":"Meier T, Mayer EJ, Heuckeroth V, et al. Evidence of Biexcitonic Contributions to Four-wave-mixing in GaAs Quantum Wells. <i>Physical Review B</i>. 1994;50(19):14730-14733. doi:<a href=\"https://doi.org/10.1103/PhysRevB.50.14730\">10.1103/PhysRevB.50.14730</a>","ieee":"T. Meier <i>et al.</i>, “Evidence of Biexcitonic Contributions to Four-wave-mixing in GaAs Quantum Wells,” <i>Physical Review B</i>, vol. 50, no. 19, pp. 14730–14733, 1994, doi: <a href=\"https://doi.org/10.1103/PhysRevB.50.14730\">10.1103/PhysRevB.50.14730</a>.","chicago":"Meier, Torsten, E.J. Mayer, V. Heuckeroth, G.O. Smith, J. Kuhl, K. Bott, A. Schulze, et al. “Evidence of Biexcitonic Contributions to Four-Wave-Mixing in GaAs Quantum Wells.” <i>Physical Review B</i> 50, no. 19 (1994): 14730–33. <a href=\"https://doi.org/10.1103/PhysRevB.50.14730\">https://doi.org/10.1103/PhysRevB.50.14730</a>."},"_id":"43595","department":[{"_id":"293"}],"user_id":"49063","extern":"1","language":[{"iso":"eng"}],"publication":"Physical Review B","type":"journal_article","abstract":[{"text":"A three-pulse degenerate four-wave-mixing experiment and its theoretical analysis reveal contributions of local field and biexciton effects to the nonlinear optical response of the two-dimensional exciton. Quantum beats with a frequency equivalent to the biexciton binding energy appear only for specific polarizations. Polarization-dependent spectrally resolved four-wave mixing shows an additional peak that is separated from the 1s heavy-hole exciton line by the biexciton binding energy. These experimental results are in good agreement with the optical selection rules of the theoretical model, providing evidence for biexcitonic contributions to the four-wave mixing.","lang":"eng"}],"status":"public"},{"publication":"Physical Review B","abstract":[{"lang":"eng","text":"The effects of disorder and many-body interaction on the four-wave-mixing signal in semiconductor quantum wells are studied experimentally and theoretically. For weakly disordered samples it is shown that the combined influence of Coulomb and disorder effects leads to a characteristic photon-echo signal in time-resolved measurements and to oscillations in the time-integrated signal. Convincing agreement between experiment and theory is demonstrated."}],"language":[{"iso":"eng"}],"issue":"11","year":"1994","publisher":"American Physical Society","date_created":"2023-04-14T23:26:36Z","title":"Simultaneous influence of disorder and Coulomb interaction on photon echoes in semiconductors","type":"journal_article","status":"public","_id":"43594","user_id":"49063","department":[{"_id":"293"}],"extern":"1","publication_status":"published","citation":{"ieee":"T. Meier <i>et al.</i>, “Simultaneous influence of disorder and Coulomb interaction on photon echoes in semiconductors,” <i>Physical Review B</i>, vol. 50, no. 11, pp. 8114–8117, 1994, doi: <a href=\"https://doi.org/10.1103/PhysRevB.50.8114\">10.1103/PhysRevB.50.8114</a>.","chicago":"Meier, Torsten, F. Jahnke, M. Koch, J. Feldmann, W. Schäfer, P. Thomas, S.W. Koch, E.O. Göbel, and H. Nickel. “Simultaneous Influence of Disorder and Coulomb Interaction on Photon Echoes in Semiconductors.” <i>Physical Review B</i> 50, no. 11 (1994): 8114–17. <a href=\"https://doi.org/10.1103/PhysRevB.50.8114\">https://doi.org/10.1103/PhysRevB.50.8114</a>.","ama":"Meier T, Jahnke F, Koch M, et al. Simultaneous influence of disorder and Coulomb interaction on photon echoes in semiconductors. <i>Physical Review B</i>. 1994;50(11):8114-8117. doi:<a href=\"https://doi.org/10.1103/PhysRevB.50.8114\">10.1103/PhysRevB.50.8114</a>","mla":"Meier, Torsten, et al. “Simultaneous Influence of Disorder and Coulomb Interaction on Photon Echoes in Semiconductors.” <i>Physical Review B</i>, vol. 50, no. 11, American Physical Society, 1994, pp. 8114–17, doi:<a href=\"https://doi.org/10.1103/PhysRevB.50.8114\">10.1103/PhysRevB.50.8114</a>.","bibtex":"@article{Meier_Jahnke_Koch_Feldmann_Schäfer_Thomas_Koch_Göbel_Nickel_1994, title={Simultaneous influence of disorder and Coulomb interaction on photon echoes in semiconductors}, volume={50}, DOI={<a href=\"https://doi.org/10.1103/PhysRevB.50.8114\">10.1103/PhysRevB.50.8114</a>}, number={11}, journal={Physical Review B}, publisher={American Physical Society}, author={Meier, Torsten and Jahnke, F. and Koch, M. and Feldmann, J. and Schäfer, W. and Thomas, P. and Koch, S.W. and Göbel, E.O. and Nickel, H.}, year={1994}, pages={8114–8117} }","short":"T. Meier, F. Jahnke, M. Koch, J. Feldmann, W. Schäfer, P. Thomas, S.W. Koch, E.O. Göbel, H. Nickel, Physical Review B 50 (1994) 8114–8117.","apa":"Meier, T., Jahnke, F., Koch, M., Feldmann, J., Schäfer, W., Thomas, P., Koch, S. W., Göbel, E. O., &#38; Nickel, H. (1994). Simultaneous influence of disorder and Coulomb interaction on photon echoes in semiconductors. <i>Physical Review B</i>, <i>50</i>(11), 8114–8117. <a href=\"https://doi.org/10.1103/PhysRevB.50.8114\">https://doi.org/10.1103/PhysRevB.50.8114</a>"},"intvolume":"        50","page":"8114-8117","date_updated":"2023-04-14T23:27:49Z","author":[{"first_name":"Torsten","full_name":"Meier, Torsten","id":"344","last_name":"Meier","orcid":"0000-0001-8864-2072"},{"first_name":"F.","full_name":"Jahnke, F.","last_name":"Jahnke"},{"first_name":"M.","last_name":"Koch","full_name":"Koch, M."},{"full_name":"Feldmann, J.","last_name":"Feldmann","first_name":"J."},{"first_name":"W.","last_name":"Schäfer","full_name":"Schäfer, W."},{"last_name":"Thomas","full_name":"Thomas, P.","first_name":"P."},{"full_name":"Koch, S.W.","last_name":"Koch","first_name":"S.W."},{"full_name":"Göbel, E.O.","last_name":"Göbel","first_name":"E.O."},{"first_name":"H.","last_name":"Nickel","full_name":"Nickel, H."}],"volume":50,"main_file_link":[{"url":"https://journals.aps.org/prb/abstract/10.1103/PhysRevB.50.8114"}],"doi":"10.1103/PhysRevB.50.8114"}]