---
_id: '4044'
abstract:
- lang: eng
text: A simulation environment for metallic nanostructures based on the Discontinuous
Galerkin Time Domain method is presented. The model is used to compute the linear
and nonlinear optical response of split ring resonators and to study physical
mechanisms that contribute to second harmonic generation.
article_number: C1V89S1P041
article_type: original
author:
- first_name: Yevgen
full_name: Grynko, Yevgen
id: '26059'
last_name: Grynko
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
citation:
ama: Grynko Y, Förstner J, Meier T. Application of the discontinous Galerkin time
domain method to the optics of metallic nanostructures. AAPP | Atti della Accademia
Peloritana dei Pericolanti. 2011;89(1). doi:10.1478/C1V89S1P041
apa: Grynko, Y., Förstner, J., & Meier, T. (2011). Application of the discontinous
Galerkin time domain method to the optics of metallic nanostructures. AAPP
| Atti Della Accademia Peloritana Dei Pericolanti, 89(1), Article C1V89S1P041.
https://doi.org/10.1478/C1V89S1P041
bibtex: '@article{Grynko_Förstner_Meier_2011, title={Application of the discontinous
Galerkin time domain method to the optics of metallic nanostructures}, volume={89},
DOI={10.1478/C1V89S1P041}, number={1C1V89S1P041},
journal={AAPP | Atti della Accademia Peloritana dei Pericolanti}, author={Grynko,
Yevgen and Förstner, Jens and Meier, Torsten}, year={2011} }'
chicago: Grynko, Yevgen, Jens Förstner, and Torsten Meier. “Application of the Discontinous
Galerkin Time Domain Method to the Optics of Metallic Nanostructures.” AAPP
| Atti Della Accademia Peloritana Dei Pericolanti 89, no. 1 (2011). https://doi.org/10.1478/C1V89S1P041.
ieee: 'Y. Grynko, J. Förstner, and T. Meier, “Application of the discontinous Galerkin
time domain method to the optics of metallic nanostructures,” AAPP | Atti della
Accademia Peloritana dei Pericolanti, vol. 89, no. 1, Art. no. C1V89S1P041,
2011, doi: 10.1478/C1V89S1P041.'
mla: Grynko, Yevgen, et al. “Application of the Discontinous Galerkin Time Domain
Method to the Optics of Metallic Nanostructures.” AAPP | Atti Della Accademia
Peloritana Dei Pericolanti, vol. 89, no. 1, C1V89S1P041, 2011, doi:10.1478/C1V89S1P041.
short: Y. Grynko, J. Förstner, T. Meier, AAPP | Atti Della Accademia Peloritana
Dei Pericolanti 89 (2011).
date_created: 2018-08-22T10:18:44Z
date_updated: 2025-12-16T11:21:11Z
ddc:
- '530'
department:
- _id: '15'
- _id: '293'
- _id: '170'
- _id: '230'
- _id: '35'
- _id: '34'
- _id: '61'
doi: 10.1478/C1V89S1P041
file:
- access_level: open_access
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-22T10:17:27Z
date_updated: 2018-09-04T19:11:52Z
file_id: '4045'
file_name: 2011 Grynko,Förstner,Meier_Application of the discontinous Galerkin time
domain method to the optics of metallic nanostructures.pdf
file_size: 258268
relation: main_file
file_date_updated: 2018-09-04T19:11:52Z
has_accepted_license: '1'
intvolume: ' 89'
issue: '1'
keyword:
- tet_topic_numerics
- tet_topic_shg
- tet_topic_meta
language:
- iso: eng
oa: '1'
publication: AAPP | Atti della Accademia Peloritana dei Pericolanti
publication_identifier:
issn:
- 1825-1242
publication_status: published
status: public
title: Application of the discontinous Galerkin time domain method to the optics of
metallic nanostructures
type: journal_article
urn: '40448'
user_id: '16199'
volume: 89
year: '2011'
...
---
_id: '4091'
abstract:
- lang: eng
text: 'We present a nonequilibrium ab initio method for calculating nonlinear and
nonlocal optical effects in metallic slabs with a thickness of several nanometers.
The numerical analysis is based on the full solution of the time‐dependent Kohn–Sham
equations for a jellium system and allows to study the optical response of metal
electrons subject to arbitrarily shaped intense light pulses. We find a strong
localization of the generated second‐harmonic current in the surface regions of
the slabs. '
article_type: original
author:
- first_name: Mathias
full_name: Wand, Mathias
last_name: Wand
- first_name: Arno
full_name: Schindlmayr, Arno
id: '458'
last_name: Schindlmayr
orcid: 0000-0002-4855-071X
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
citation:
ama: Wand M, Schindlmayr A, Meier T, Förstner J. Simulation of the ultrafast nonlinear
optical response of metal slabs. Physica Status Solidi B. 2011;248(4):887-891.
doi:10.1002/pssb.201001219
apa: Wand, M., Schindlmayr, A., Meier, T., & Förstner, J. (2011). Simulation
of the ultrafast nonlinear optical response of metal slabs. Physica Status
Solidi B, 248(4), 887–891. https://doi.org/10.1002/pssb.201001219
bibtex: '@article{Wand_Schindlmayr_Meier_Förstner_2011, title={Simulation of the
ultrafast nonlinear optical response of metal slabs}, volume={248}, DOI={10.1002/pssb.201001219},
number={4}, journal={Physica Status Solidi B}, publisher={Wiley-VCH}, author={Wand,
Mathias and Schindlmayr, Arno and Meier, Torsten and Förstner, Jens}, year={2011},
pages={887–891} }'
chicago: 'Wand, Mathias, Arno Schindlmayr, Torsten Meier, and Jens Förstner. “Simulation
of the Ultrafast Nonlinear Optical Response of Metal Slabs.” Physica Status
Solidi B 248, no. 4 (2011): 887–91. https://doi.org/10.1002/pssb.201001219.'
ieee: 'M. Wand, A. Schindlmayr, T. Meier, and J. Förstner, “Simulation of the ultrafast
nonlinear optical response of metal slabs,” Physica Status Solidi B, vol.
248, no. 4, pp. 887–891, 2011, doi: 10.1002/pssb.201001219.'
mla: Wand, Mathias, et al. “Simulation of the Ultrafast Nonlinear Optical Response
of Metal Slabs.” Physica Status Solidi B, vol. 248, no. 4, Wiley-VCH, 2011,
pp. 887–91, doi:10.1002/pssb.201001219.
short: M. Wand, A. Schindlmayr, T. Meier, J. Förstner, Physica Status Solidi B 248
(2011) 887–891.
date_created: 2018-08-23T09:53:38Z
date_updated: 2025-12-16T11:26:04Z
ddc:
- '530'
department:
- _id: '293'
- _id: '230'
- _id: '296'
- _id: '15'
- _id: '170'
- _id: '35'
- _id: '34'
- _id: '61'
doi: 10.1002/pssb.201001219
external_id:
isi:
- '000288856300020'
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-23T09:55:13Z
date_updated: 2020-08-30T15:01:30Z
description: © 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
file_id: '4092'
file_name: 2011 Wand,Schindlmayr,Meier,Förstner_Simulation of the ultrafast nonlinear
optical response of metal slabs.pdf
file_size: 739579
relation: main_file
title: Simulation of the ultrafast optical response of metal slabs
file_date_updated: 2020-08-30T15:01:30Z
has_accepted_license: '1'
intvolume: ' 248'
isi: '1'
issue: '4'
keyword:
- tet_topic_shg
language:
- iso: eng
page: 887-891
publication: Physica Status Solidi B
publication_identifier:
eissn:
- 1521-3951
issn:
- 0370-1972
publication_status: published
publisher: Wiley-VCH
quality_controlled: '1'
status: public
title: Simulation of the ultrafast nonlinear optical response of metal slabs
type: journal_article
user_id: '16199'
volume: 248
year: '2011'
...
---
_id: '4543'
abstract:
- lang: eng
text: The vibrational properties of the LiNbO3 (0001) surfaces have been investigated
both from first principles and with Raman spectroscopy measurements. Firstly,
the phonon modes of bulk and of the (0001) surface are calculated by means of
the density functional theory. Our calculations reveal the existence of localised
vibrational modes both at the positive and at the negative surface. The surface
vibrations are found at energies above and within the bulk bands. Phonon modes
localised at the positive and at the negative surface differ substantially. In
a second step, the Raman spectra of LiNbO3 bulk and of the two surfaces have been
measured. Raman spectroscopy is shown to be sensitive to differences between bulk
and surface and between positive and negative surface. The calculated and measured
frequencies are in agreement within the error of the method.
article_type: original
author:
- first_name: S.
full_name: Sanna, S.
last_name: Sanna
- first_name: Gerhard
full_name: Berth, Gerhard
id: '53'
last_name: Berth
- first_name: W.
full_name: Hahn, W.
last_name: Hahn
- first_name: A.
full_name: Widhalm, A.
last_name: Widhalm
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
citation:
ama: Sanna S, Berth G, Hahn W, Widhalm A, Zrenner A, Schmidt WG. Localised Phonon
Modes at LiNbO3(0001) Surfaces. Ferroelectrics. 2011;419(1):1-8. doi:10.1080/00150193.2011.594396
apa: Sanna, S., Berth, G., Hahn, W., Widhalm, A., Zrenner, A., & Schmidt, W.
G. (2011). Localised Phonon Modes at LiNbO3(0001) Surfaces. Ferroelectrics,
419(1), 1–8. https://doi.org/10.1080/00150193.2011.594396
bibtex: '@article{Sanna_Berth_Hahn_Widhalm_Zrenner_Schmidt_2011, title={Localised
Phonon Modes at LiNbO3(0001) Surfaces}, volume={419}, DOI={10.1080/00150193.2011.594396},
number={1}, journal={Ferroelectrics}, publisher={Informa UK Limited}, author={Sanna,
S. and Berth, Gerhard and Hahn, W. and Widhalm, A. and Zrenner, Artur and Schmidt,
Wolf Gero}, year={2011}, pages={1–8} }'
chicago: 'Sanna, S., Gerhard Berth, W. Hahn, A. Widhalm, Artur Zrenner, and Wolf
Gero Schmidt. “Localised Phonon Modes at LiNbO3(0001) Surfaces.” Ferroelectrics
419, no. 1 (2011): 1–8. https://doi.org/10.1080/00150193.2011.594396.'
ieee: 'S. Sanna, G. Berth, W. Hahn, A. Widhalm, A. Zrenner, and W. G. Schmidt, “Localised
Phonon Modes at LiNbO3(0001) Surfaces,” Ferroelectrics, vol. 419, no. 1,
pp. 1–8, 2011, doi: 10.1080/00150193.2011.594396.'
mla: Sanna, S., et al. “Localised Phonon Modes at LiNbO3(0001) Surfaces.” Ferroelectrics,
vol. 419, no. 1, Informa UK Limited, 2011, pp. 1–8, doi:10.1080/00150193.2011.594396.
short: S. Sanna, G. Berth, W. Hahn, A. Widhalm, A. Zrenner, W.G. Schmidt, Ferroelectrics
419 (2011) 1–8.
date_created: 2018-09-20T11:26:53Z
date_updated: 2025-12-16T11:29:20Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '170'
- _id: '295'
- _id: '35'
- _id: '27'
doi: 10.1080/00150193.2011.594396
intvolume: ' 419'
issue: '1'
language:
- iso: eng
page: 1-8
project:
- _id: '52'
name: 'PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing'
publication: Ferroelectrics
publication_identifier:
issn:
- 0015-0193
- 1563-5112
publication_status: published
publisher: Informa UK Limited
status: public
title: Localised Phonon Modes at LiNbO3(0001) Surfaces
type: journal_article
user_id: '16199'
volume: 419
year: '2011'
...
---
_id: '4122'
abstract:
- lang: eng
text: 'We experimentally and theoretically investigate injection currents generated
by femtosecond single-color circularly-polarized laser pulses in (110)-oriented
GaAs quantum wells. The current measurements are performed by detecting the emitted
Terahertz radiation at room temperature. The microscopic theory is based on a
14 x 14 k • p band-structure calculation in combination with the multi-subband
semiconductor Bloch equations. For symmetric GaAs quantum wells grown in (110)
direction, an oscillatory dependence of the injection currents on the exciting
photon energy is obtained. The results of the microscopic theory are in good agreement
with the measurements. '
article_number: 79370U
author:
- first_name: H. T.
full_name: Duc, H. T.
last_name: Duc
- first_name: M.
full_name: Pochwala, M.
last_name: Pochwala
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: S.
full_name: Priyadarshi, S.
last_name: Priyadarshi
- first_name: A. M.
full_name: Racu, A. M.
last_name: Racu
- first_name: K.
full_name: Pierz, K.
last_name: Pierz
- first_name: U.
full_name: Siegner, U.
last_name: Siegner
- first_name: M.
full_name: Bieler, M.
last_name: Bieler
citation:
ama: 'Duc HT, Pochwala M, Förstner J, et al. Injection currents in (110)-oriented
GaAs/AlGaAs quantum wells: recent progress in theory and experiment. In: Tsen
K-T, Song J-J, Betz M, Elezzabi AY, eds. Ultrafast Phenomena in Semiconductors
and Nanostructure Materials XV. Vol 7937. SPIE Proceedings. SPIE; 2011. doi:10.1117/12.876972'
apa: 'Duc, H. T., Pochwala, M., Förstner, J., Meier, T., Priyadarshi, S., Racu,
A. M., Pierz, K., Siegner, U., & Bieler, M. (2011). Injection currents in
(110)-oriented GaAs/AlGaAs quantum wells: recent progress in theory and experiment.
In K.-T. Tsen, J.-J. Song, M. Betz, & A. Y. Elezzabi (Eds.), Ultrafast
Phenomena in Semiconductors and Nanostructure Materials XV (No. 79370U; Vol.
7937). SPIE. https://doi.org/10.1117/12.876972'
bibtex: '@inproceedings{Duc_Pochwala_Förstner_Meier_Priyadarshi_Racu_Pierz_Siegner_Bieler_2011,
series={SPIE Proceedings}, title={Injection currents in (110)-oriented GaAs/AlGaAs
quantum wells: recent progress in theory and experiment}, volume={7937}, DOI={10.1117/12.876972}, number={79370U},
booktitle={Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV},
publisher={SPIE}, author={Duc, H. T. and Pochwala, M. and Förstner, Jens and Meier,
Torsten and Priyadarshi, S. and Racu, A. M. and Pierz, K. and Siegner, U. and
Bieler, M.}, editor={Tsen, Kong-Thon and Song, Jin-Joo and Betz, Markus and Elezzabi,
Abdulhakem Y.}, year={2011}, collection={SPIE Proceedings} }'
chicago: 'Duc, H. T., M. Pochwala, Jens Förstner, Torsten Meier, S. Priyadarshi,
A. M. Racu, K. Pierz, U. Siegner, and M. Bieler. “Injection Currents in (110)-Oriented
GaAs/AlGaAs Quantum Wells: Recent Progress in Theory and Experiment.” In Ultrafast
Phenomena in Semiconductors and Nanostructure Materials XV, edited by Kong-Thon
Tsen, Jin-Joo Song, Markus Betz, and Abdulhakem Y. Elezzabi, Vol. 7937. SPIE Proceedings.
SPIE, 2011. https://doi.org/10.1117/12.876972.'
ieee: 'H. T. Duc et al., “Injection currents in (110)-oriented GaAs/AlGaAs
quantum wells: recent progress in theory and experiment,” in Ultrafast Phenomena
in Semiconductors and Nanostructure Materials XV, 2011, vol. 7937, doi: 10.1117/12.876972.'
mla: 'Duc, H. T., et al. “Injection Currents in (110)-Oriented GaAs/AlGaAs Quantum
Wells: Recent Progress in Theory and Experiment.” Ultrafast Phenomena in Semiconductors
and Nanostructure Materials XV, edited by Kong-Thon Tsen et al., vol. 7937,
79370U, SPIE, 2011, doi:10.1117/12.876972.'
short: 'H.T. Duc, M. Pochwala, J. Förstner, T. Meier, S. Priyadarshi, A.M. Racu,
K. Pierz, U. Siegner, M. Bieler, in: K.-T. Tsen, J.-J. Song, M. Betz, A.Y. Elezzabi
(Eds.), Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV,
SPIE, 2011.'
date_created: 2018-08-27T09:32:36Z
date_updated: 2025-12-16T11:36:39Z
department:
- _id: '15'
- _id: '293'
- _id: '170'
- _id: '230'
- _id: '35'
- _id: '34'
- _id: '61'
doi: 10.1117/12.876972
editor:
- first_name: Kong-Thon
full_name: Tsen, Kong-Thon
last_name: Tsen
- first_name: Jin-Joo
full_name: Song, Jin-Joo
last_name: Song
- first_name: Markus
full_name: Betz, Markus
last_name: Betz
- first_name: Abdulhakem Y.
full_name: Elezzabi, Abdulhakem Y.
last_name: Elezzabi
intvolume: ' 7937'
keyword:
- tet_topic_qw
language:
- iso: eng
publication: Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV
publication_status: published
publisher: SPIE
series_title: SPIE Proceedings
status: public
title: 'Injection currents in (110)-oriented GaAs/AlGaAs quantum wells: recent progress
in theory and experiment'
type: conference
user_id: '16199'
volume: 7937
year: '2011'
...
---
_id: '4046'
abstract:
- lang: eng
text: "We demonstrate by spin quantum beat spectroscopy that in undoped symmetric
(110)-oriented GaAs/AlGaAs\r\nsingle quantum wells, even a symmetric spatial envelope
wave function gives rise to an asymmetric in-plane\r\nelectron Land´e g-factor.
The anisotropy is neither a direct consequence of the asymmetric in-plane Dresselhaus\r\nsplitting
nor a direct consequence of the asymmetric Zeeman splitting of the hole bands,
but rather it is a pure\r\nhigher-order effect that exists as well for diamond-type
lattices. The measurements for various well widths are\r\nvery well described
within 14 × 14 band k·p theory and illustrate that the electron spin is an excellent
meter\r\nvariable for mapping out the internal—otherwise hidden—symmetries in
two-dimensional systems. Fourth-order\r\nperturbation theory yields an analytical
expression for the strength of the g-factor anisotropy, providing a\r\nqualitative
understanding of the observed effects."
article_type: original
author:
- first_name: J.
full_name: Hübner, J.
last_name: Hübner
- first_name: S.
full_name: Kunz, S.
last_name: Kunz
- first_name: S.
full_name: Oertel, S.
last_name: Oertel
- first_name: D.
full_name: Schuh, D.
last_name: Schuh
- first_name: M.
full_name: Pochwała, M.
last_name: Pochwała
- first_name: H. T.
full_name: Duc, H. T.
last_name: Duc
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: M.
full_name: Oestreich, M.
last_name: Oestreich
citation:
ama: Hübner J, Kunz S, Oertel S, et al. Electron g-factor anisotropy in symmetric
(110)-oriented GaAs quantum wells. Physical Review B. 2011;84(4):041301(R).
doi:10.1103/physrevb.84.041301
apa: Hübner, J., Kunz, S., Oertel, S., Schuh, D., Pochwała, M., Duc, H. T., Förstner,
J., Meier, T., & Oestreich, M. (2011). Electron g-factor anisotropy in symmetric
(110)-oriented GaAs quantum wells. Physical Review B, 84(4), 041301(R).
https://doi.org/10.1103/physrevb.84.041301
bibtex: '@article{Hübner_Kunz_Oertel_Schuh_Pochwała_Duc_Förstner_Meier_Oestreich_2011,
title={Electron g-factor anisotropy in symmetric (110)-oriented GaAs quantum wells},
volume={84}, DOI={10.1103/physrevb.84.041301},
number={4}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Hübner, J. and Kunz, S. and Oertel, S. and Schuh, D. and Pochwała,
M. and Duc, H. T. and Förstner, Jens and Meier, Torsten and Oestreich, M.}, year={2011},
pages={041301(R)} }'
chicago: 'Hübner, J., S. Kunz, S. Oertel, D. Schuh, M. Pochwała, H. T. Duc, Jens
Förstner, Torsten Meier, and M. Oestreich. “Electron G-Factor Anisotropy in Symmetric
(110)-Oriented GaAs Quantum Wells.” Physical Review B 84, no. 4 (2011):
041301(R). https://doi.org/10.1103/physrevb.84.041301.'
ieee: 'J. Hübner et al., “Electron g-factor anisotropy in symmetric (110)-oriented
GaAs quantum wells,” Physical Review B, vol. 84, no. 4, p. 041301(R), 2011,
doi: 10.1103/physrevb.84.041301.'
mla: Hübner, J., et al. “Electron G-Factor Anisotropy in Symmetric (110)-Oriented
GaAs Quantum Wells.” Physical Review B, vol. 84, no. 4, American Physical
Society (APS), 2011, p. 041301(R), doi:10.1103/physrevb.84.041301.
short: J. Hübner, S. Kunz, S. Oertel, D. Schuh, M. Pochwała, H.T. Duc, J. Förstner,
T. Meier, M. Oestreich, Physical Review B 84 (2011) 041301(R).
date_created: 2018-08-22T10:20:23Z
date_updated: 2025-12-16T16:19:20Z
ddc:
- '530'
department:
- _id: '15'
- _id: '293'
- _id: '170'
- _id: '230'
- _id: '35'
- _id: '34'
- _id: '61'
doi: 10.1103/physrevb.84.041301
file:
- access_level: open_access
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-22T10:22:40Z
date_updated: 2018-09-04T19:28:55Z
file_id: '4047'
file_name: 2011 Hübner,Kunz,Örtel,Schuh,Pochwala,Duc,Förstner,Meier,Östreich_Electron
g -factor anisotropy in symmetric (110)-oriented GaAs quantum wells.pdf
file_size: 339595
relation: main_file
file_date_updated: 2018-09-04T19:28:55Z
has_accepted_license: '1'
intvolume: ' 84'
issue: '4'
keyword:
- tet_topic_qw
language:
- iso: eng
oa: '1'
page: 041301(R)
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Electron g-factor anisotropy in symmetric (110)-oriented GaAs quantum wells
type: journal_article
urn: '40467'
user_id: '16199'
volume: 84
year: '2011'
...
---
_id: '43202'
abstract:
- lang: eng
text: For numerous applications, the computation and provision of exact derivative
information plays an important role for optimizing the considered system. This
paper introduces the technique of algorithmic differentiation, a method to compute
derivatives of arbitrary order within working precision. This derivative information
will be combined with a calculus-based optimization algorithm to optimize a non-trivially
shaped laser pulse which coherently steers the electron dynamics in a semiconductor
quantum wire. Numerical results illustrating the cost for the derivative computation
and the optimization process are presented and discussed.
author:
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: Matthias
full_name: Reichelt, Matthias
id: '138'
last_name: Reichelt
- first_name: A.
full_name: Walther, A.
last_name: Walther
citation:
ama: Meier T, Reichelt M, Walther A. Calculus-based optimization of the electron
dynamics in nanostructures. Photonics and Nanostructures - Fundamentals and
Applications. 2011;9(4):328-336. doi:10.1016/j.photonics.2011.03.006
apa: Meier, T., Reichelt, M., & Walther, A. (2011). Calculus-based optimization
of the electron dynamics in nanostructures. Photonics and Nanostructures -
Fundamentals and Applications, 9(4), 328–336. https://doi.org/10.1016/j.photonics.2011.03.006
bibtex: '@article{Meier_Reichelt_Walther_2011, title={Calculus-based optimization
of the electron dynamics in nanostructures}, volume={9}, DOI={10.1016/j.photonics.2011.03.006},
number={4}, journal={Photonics and Nanostructures - Fundamentals and Applications},
publisher={Elsevier}, author={Meier, Torsten and Reichelt, Matthias and Walther,
A.}, year={2011}, pages={328–336} }'
chicago: 'Meier, Torsten, Matthias Reichelt, and A. Walther. “Calculus-Based Optimization
of the Electron Dynamics in Nanostructures.” Photonics and Nanostructures -
Fundamentals and Applications 9, no. 4 (2011): 328–36. https://doi.org/10.1016/j.photonics.2011.03.006.'
ieee: 'T. Meier, M. Reichelt, and A. Walther, “Calculus-based optimization of the
electron dynamics in nanostructures,” Photonics and Nanostructures - Fundamentals
and Applications, vol. 9, no. 4, pp. 328–336, 2011, doi: 10.1016/j.photonics.2011.03.006.'
mla: Meier, Torsten, et al. “Calculus-Based Optimization of the Electron Dynamics
in Nanostructures.” Photonics and Nanostructures - Fundamentals and Applications,
vol. 9, no. 4, Elsevier, 2011, pp. 328–36, doi:10.1016/j.photonics.2011.03.006.
short: T. Meier, M. Reichelt, A. Walther, Photonics and Nanostructures - Fundamentals
and Applications 9 (2011) 328–336.
date_created: 2023-03-29T21:25:40Z
date_updated: 2025-12-16T16:49:08Z
department:
- _id: '293'
- _id: '35'
- _id: '15'
- _id: '170'
- _id: '230'
doi: 10.1016/j.photonics.2011.03.006
intvolume: ' 9'
issue: '4'
language:
- iso: eng
page: 328-336
publication: Photonics and Nanostructures - Fundamentals and Applications
publication_status: published
publisher: Elsevier
status: public
title: Calculus-based optimization of the electron dynamics in nanostructures
type: journal_article
user_id: '16199'
volume: 9
year: '2011'
...
---
_id: '43260'
author:
- first_name: J.
full_name: Güdde, J.
last_name: Güdde
- first_name: M.
full_name: Rohleder, M.
last_name: Rohleder
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: S.W.
full_name: Koch, S.W.
last_name: Koch
- first_name: U.
full_name: Höfer, U.
last_name: Höfer
citation:
ama: 'Güdde J, Rohleder M, Meier T, Koch SW, Höfer U. Coherently controlled electrical
currents at surfaces. In: Bovensiepen U, Petek H, Wolf M, eds. Dynamics at
Solid State Surfaces and Interfaces. Vol 1. Current Developments. Wiley‐VCH
Verlag; 2010:579-591. doi:10.1002/9783527633418.ch24'
apa: Güdde, J., Rohleder, M., Meier, T., Koch, S. W., & Höfer, U. (2010). Coherently
controlled electrical currents at surfaces. In U. Bovensiepen, H. Petek, &
M. Wolf (Eds.), Dynamics at Solid State Surfaces and Interfaces (Vol. 1,
pp. 579–591). Wiley‐VCH Verlag. https://doi.org/10.1002/9783527633418.ch24
bibtex: '@inbook{Güdde_Rohleder_Meier_Koch_Höfer_2010, place={Weinheim}, series={Current
Developments}, title={Coherently controlled electrical currents at surfaces},
volume={1}, DOI={10.1002/9783527633418.ch24},
booktitle={Dynamics at Solid State Surfaces and Interfaces}, publisher={Wiley‐VCH
Verlag}, author={Güdde, J. and Rohleder, M. and Meier, Torsten and Koch, S.W.
and Höfer, U.}, editor={Bovensiepen, U. and Petek, H. and Wolf, M.}, year={2010},
pages={579–591}, collection={Current Developments} }'
chicago: 'Güdde, J., M. Rohleder, Torsten Meier, S.W. Koch, and U. Höfer. “Coherently
Controlled Electrical Currents at Surfaces.” In Dynamics at Solid State Surfaces
and Interfaces, edited by U. Bovensiepen, H. Petek, and M. Wolf, 1:579–91.
Current Developments. Weinheim: Wiley‐VCH Verlag, 2010. https://doi.org/10.1002/9783527633418.ch24.'
ieee: 'J. Güdde, M. Rohleder, T. Meier, S. W. Koch, and U. Höfer, “Coherently controlled
electrical currents at surfaces,” in Dynamics at Solid State Surfaces and Interfaces,
vol. 1, U. Bovensiepen, H. Petek, and M. Wolf, Eds. Weinheim: Wiley‐VCH Verlag,
2010, pp. 579–591.'
mla: Güdde, J., et al. “Coherently Controlled Electrical Currents at Surfaces.”
Dynamics at Solid State Surfaces and Interfaces, edited by U. Bovensiepen
et al., vol. 1, Wiley‐VCH Verlag, 2010, pp. 579–91, doi:10.1002/9783527633418.ch24.
short: 'J. Güdde, M. Rohleder, T. Meier, S.W. Koch, U. Höfer, in: U. Bovensiepen,
H. Petek, M. Wolf (Eds.), Dynamics at Solid State Surfaces and Interfaces, Wiley‐VCH
Verlag, Weinheim, 2010, pp. 579–591.'
date_created: 2023-04-01T21:30:57Z
date_updated: 2023-04-01T21:31:08Z
department:
- _id: '293'
doi: 10.1002/9783527633418.ch24
editor:
- first_name: U.
full_name: Bovensiepen, U.
last_name: Bovensiepen
- first_name: H.
full_name: Petek, H.
last_name: Petek
- first_name: M.
full_name: Wolf, M.
last_name: Wolf
intvolume: ' 1'
language:
- iso: eng
main_file_link:
- url: https://onlinelibrary.wiley.com/doi/10.1002/9783527633418.ch24
page: 579-591
place: Weinheim
publication: Dynamics at Solid State Surfaces and Interfaces
publication_status: published
publisher: Wiley‐VCH Verlag
series_title: Current Developments
status: public
title: Coherently controlled electrical currents at surfaces
type: book_chapter
user_id: '49063'
volume: 1
year: '2010'
...
---
_id: '4127'
abstract:
- lang: eng
text: "The dynamics of charge and spin injection currents excited by circularly
polarized, one-color laser beams in\r\nsemiconductor quantum wells is analyzed.
Our microscopic approach is based on a 14x14 k · p band-structure\r\ntheory in
combination with multisubband semiconductor Bloch equations which allows a detailed
analysis of\r\nthe photogenerated carrier distributions and coherences in k space.
Charge and spin injection currents are\r\nnumerically calculated for [110]- and
[001]-grown GaAs quantum wells including dc population contributions\r\nand ac
contributions that arise from intersubband coherences. The dependencies of the
injection currents on the\r\nexcitation conditions, in particular, the photon
energy are computed and discussed."
article_number: '115316'
article_type: original
author:
- first_name: Huynh Thanh
full_name: Duc, Huynh Thanh
last_name: Duc
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
citation:
ama: Duc HT, Förstner J, Meier T. Microscopic analysis of charge and spin photocurrents
injected by circularly polarized one-color laser pulses in GaAs quantum wells.
Physical Review B. 2010;82(11). doi:10.1103/physrevb.82.115316
apa: Duc, H. T., Förstner, J., & Meier, T. (2010). Microscopic analysis of charge
and spin photocurrents injected by circularly polarized one-color laser pulses
in GaAs quantum wells. Physical Review B, 82(11), Article 115316.
https://doi.org/10.1103/physrevb.82.115316
bibtex: '@article{Duc_Förstner_Meier_2010, title={Microscopic analysis of charge
and spin photocurrents injected by circularly polarized one-color laser pulses
in GaAs quantum wells}, volume={82}, DOI={10.1103/physrevb.82.115316},
number={11115316}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Duc, Huynh Thanh and Förstner, Jens and Meier, Torsten}, year={2010}
}'
chicago: Duc, Huynh Thanh, Jens Förstner, and Torsten Meier. “Microscopic Analysis
of Charge and Spin Photocurrents Injected by Circularly Polarized One-Color Laser
Pulses in GaAs Quantum Wells.” Physical Review B 82, no. 11 (2010). https://doi.org/10.1103/physrevb.82.115316.
ieee: 'H. T. Duc, J. Förstner, and T. Meier, “Microscopic analysis of charge and
spin photocurrents injected by circularly polarized one-color laser pulses in
GaAs quantum wells,” Physical Review B, vol. 82, no. 11, Art. no. 115316,
2010, doi: 10.1103/physrevb.82.115316.'
mla: Duc, Huynh Thanh, et al. “Microscopic Analysis of Charge and Spin Photocurrents
Injected by Circularly Polarized One-Color Laser Pulses in GaAs Quantum Wells.”
Physical Review B, vol. 82, no. 11, 115316, American Physical Society (APS),
2010, doi:10.1103/physrevb.82.115316.
short: H.T. Duc, J. Förstner, T. Meier, Physical Review B 82 (2010).
date_created: 2018-08-27T10:25:36Z
date_updated: 2023-04-19T11:11:47Z
ddc:
- '530'
department:
- _id: '15'
- _id: '230'
- _id: '293'
- _id: '170'
doi: 10.1103/physrevb.82.115316
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-27T10:27:00Z
date_updated: 2018-08-27T10:27:00Z
file_id: '4128'
file_name: 2010 Duc,Förstner,Meier_Microscopic analysis of charge and spin photocurrents
injected by circularly polarized one-color laser pulses in GaAs quantum wells.pdf
file_size: 639662
relation: main_file
success: 1
file_date_updated: 2018-08-27T10:27:00Z
has_accepted_license: '1'
intvolume: ' 82'
issue: '11'
keyword:
- tet_topic_qw
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Microscopic analysis of charge and spin photocurrents injected by circularly
polarized one-color laser pulses in GaAs quantum wells
type: journal_article
user_id: '49063'
volume: 82
year: '2010'
...
---
_id: '43261'
abstract:
- lang: eng
text: We report the development of an experimental technique to measure the dynamics
of electrical currents on the femtosecond timescale. The technique combines methods
of coherent control with time- and angle-resolved photoelectron spectroscopy.
Direct snapshots of the momentum distribution of the excited electrons as function
of time are then determined by photoelectron spectroscopy. In this way we gain
information on the generation and decay of ultrashort current pulses in unprecedented
detail. In particular, this technique allows the observation of elastic electron
scattering in terms of an incoherent population dynamics in momentum space. We
have applied this optical current generation and detection scheme to electrons
in so-called image-potential states which represent a prototype of two-dimensional
electronic surface states. Electrons in these states are bound perpendicular to
the metal surface by the Coulombic image potential whereas they can move almost
freely parallel to the surface. For the (n=1) image-potential state of Cu(100)
we find a decay time of 10 fs due to electron scattering with steps and surface
defects.
article_number: 76001K
author:
- first_name: J.
full_name: Güdde, J.
last_name: Güdde
- first_name: M.
full_name: Rohleder, M.
last_name: Rohleder
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: S.W.
full_name: Koch, S.W.
last_name: Koch
- first_name: U.
full_name: Höfer, U.
last_name: Höfer
citation:
ama: 'Güdde J, Rohleder M, Meier T, Koch SW, Höfer U. Ultrafast coherent control
of electric currents at metal surfaces. In: Song J-J, Tsen K-T, Betz M, Y. Elezzabi
A, eds. Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV.
Vol 7600. SPIE Proceedings. SPIE; 2010. doi:10.1117/12.839672'
apa: Güdde, J., Rohleder, M., Meier, T., Koch, S. W., & Höfer, U. (2010). Ultrafast
coherent control of electric currents at metal surfaces. In J.-J. Song, K.-T.
Tsen, M. Betz, & A. Y. Elezzabi (Eds.), Ultrafast Phenomena in Semiconductors
and Nanostructure Materials XIV (No. 76001K; Vol. 7600). SPIE. https://doi.org/10.1117/12.839672
bibtex: '@inproceedings{Güdde_Rohleder_Meier_Koch_Höfer_2010, series={SPIE Proceedings},
title={Ultrafast coherent control of electric currents at metal surfaces}, volume={7600},
DOI={10.1117/12.839672}, number={76001K},
booktitle={Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV},
publisher={SPIE}, author={Güdde, J. and Rohleder, M. and Meier, Torsten and Koch,
S.W. and Höfer, U.}, editor={Song, Jin-Joo and Tsen, Kong-Thon and Betz, Markus
and Y. Elezzabi, Abdulhakem}, year={2010}, collection={SPIE Proceedings} }'
chicago: Güdde, J., M. Rohleder, Torsten Meier, S.W. Koch, and U. Höfer. “Ultrafast
Coherent Control of Electric Currents at Metal Surfaces.” In Ultrafast Phenomena
in Semiconductors and Nanostructure Materials XIV, edited by Jin-Joo Song,
Kong-Thon Tsen, Markus Betz, and Abdulhakem Y. Elezzabi, Vol. 7600. SPIE Proceedings.
SPIE, 2010. https://doi.org/10.1117/12.839672.
ieee: 'J. Güdde, M. Rohleder, T. Meier, S. W. Koch, and U. Höfer, “Ultrafast coherent
control of electric currents at metal surfaces,” in Ultrafast Phenomena in
Semiconductors and Nanostructure Materials XIV, 2010, vol. 7600, doi: 10.1117/12.839672.'
mla: Güdde, J., et al. “Ultrafast Coherent Control of Electric Currents at Metal
Surfaces.” Ultrafast Phenomena in Semiconductors and Nanostructure Materials
XIV, edited by Jin-Joo Song et al., vol. 7600, 76001K, SPIE, 2010, doi:10.1117/12.839672.
short: 'J. Güdde, M. Rohleder, T. Meier, S.W. Koch, U. Höfer, in: J.-J. Song, K.-T.
Tsen, M. Betz, A. Y. Elezzabi (Eds.), Ultrafast Phenomena in Semiconductors and
Nanostructure Materials XIV, SPIE, 2010.'
date_created: 2023-04-01T21:37:05Z
date_updated: 2023-04-19T11:10:38Z
department:
- _id: '293'
doi: 10.1117/12.839672
editor:
- first_name: Jin-Joo
full_name: Song, Jin-Joo
last_name: Song
- first_name: Kong-Thon
full_name: Tsen, Kong-Thon
last_name: Tsen
- first_name: Markus
full_name: Betz, Markus
last_name: Betz
- first_name: Abdulhakem
full_name: Y. Elezzabi, Abdulhakem
last_name: Y. Elezzabi
intvolume: ' 7600'
language:
- iso: eng
main_file_link:
- url: https://spie.org/Publications/Proceedings/Paper/10.1117/12.839672
publication: Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV
publication_status: published
publisher: SPIE
series_title: SPIE Proceedings
status: public
title: Ultrafast coherent control of electric currents at metal surfaces
type: conference
user_id: '49063'
volume: 7600
year: '2010'
...
---
_id: '4176'
abstract:
- lang: eng
text: A microscopic theory that describes injection currents in GaAs quantum wells
is presented. 14 × 14 band k.p theory is used to compute the band structure including
anisotropy and spin-orbit interaction. Transient injection currents are obtained
via numerical solutions of the semiconductor Bloch equations. Depending on the
growth direction of the considered quantum well system and the propagation and
polarization directions of the incident light beam, it is possible to generate
charge and/or spin photocurrents on ultrashort time scales. The dependence of
the photocurrents on the excitation conditions is computed and discussed.
author:
- first_name: Huynh Thanh
full_name: Duc, Huynh Thanh
last_name: Duc
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
citation:
ama: 'Duc HT, Förstner J, Meier T. Microscopic theoretical analysis of optically
generated injection currents in semiconductor quantum wells. In: Song J-J, Tsen
K-T, Betz M, Elezzabi AY, eds. Ultrafast Phenomena in Semiconductors and Nanostructure
Materials XIV. Vol 7600. SPIE Proceedings. SPIE; 2010:76000S-76000S - 9. doi:10.1117/12.840388'
apa: Duc, H. T., Förstner, J., & Meier, T. (2010). Microscopic theoretical analysis
of optically generated injection currents in semiconductor quantum wells. In J.-J.
Song, K.-T. Tsen, M. Betz, & A. Y. Elezzabi (Eds.), Ultrafast Phenomena
in Semiconductors and Nanostructure Materials XIV (Vol. 7600, pp. 76000S-76000S
– 9). SPIE. https://doi.org/10.1117/12.840388
bibtex: '@inproceedings{Duc_Förstner_Meier_2010, series={SPIE Proceedings}, title={Microscopic
theoretical analysis of optically generated injection currents in semiconductor
quantum wells}, volume={7600}, DOI={10.1117/12.840388},
booktitle={Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV},
publisher={SPIE}, author={Duc, Huynh Thanh and Förstner, Jens and Meier, Torsten},
editor={Song, Jin-Joo and Tsen, Kong-Thon and Betz, Markus and Elezzabi, Abdulhakem
Y.}, year={2010}, pages={76000S-76000S–9}, collection={SPIE Proceedings} }'
chicago: Duc, Huynh Thanh, Jens Förstner, and Torsten Meier. “Microscopic Theoretical
Analysis of Optically Generated Injection Currents in Semiconductor Quantum Wells.”
In Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV,
edited by Jin-Joo Song, Kong-Thon Tsen, Markus Betz, and Abdulhakem Y. Elezzabi,
7600:76000S-76000S – 9. SPIE Proceedings. SPIE, 2010. https://doi.org/10.1117/12.840388.
ieee: 'H. T. Duc, J. Förstner, and T. Meier, “Microscopic theoretical analysis of
optically generated injection currents in semiconductor quantum wells,” in Ultrafast
Phenomena in Semiconductors and Nanostructure Materials XIV, 2010, vol. 7600,
pp. 76000S-76000S–9, doi: 10.1117/12.840388.'
mla: Duc, Huynh Thanh, et al. “Microscopic Theoretical Analysis of Optically Generated
Injection Currents in Semiconductor Quantum Wells.” Ultrafast Phenomena in
Semiconductors and Nanostructure Materials XIV, edited by Jin-Joo Song et
al., vol. 7600, SPIE, 2010, pp. 76000S-76000S – 9, doi:10.1117/12.840388.
short: 'H.T. Duc, J. Förstner, T. Meier, in: J.-J. Song, K.-T. Tsen, M. Betz, A.Y.
Elezzabi (Eds.), Ultrafast Phenomena in Semiconductors and Nanostructure Materials
XIV, SPIE, 2010, pp. 76000S-76000S–9.'
date_created: 2018-08-28T09:00:53Z
date_updated: 2023-04-19T11:07:47Z
department:
- _id: '15'
- _id: '293'
- _id: '170'
- _id: '230'
doi: 10.1117/12.840388
editor:
- first_name: Jin-Joo
full_name: Song, Jin-Joo
last_name: Song
- first_name: Kong-Thon
full_name: Tsen, Kong-Thon
last_name: Tsen
- first_name: Markus
full_name: Betz, Markus
last_name: Betz
- first_name: Abdulhakem Y.
full_name: Elezzabi, Abdulhakem Y.
last_name: Elezzabi
intvolume: ' 7600'
keyword:
- tet_topic_qw
language:
- iso: eng
page: 76000S-76000S-9
publication: Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV
publication_status: published
publisher: SPIE
series_title: SPIE Proceedings
status: public
title: Microscopic theoretical analysis of optically generated injection currents
in semiconductor quantum wells
type: conference
user_id: '49063'
volume: 7600
year: '2010'
...
---
_id: '44063'
abstract:
- lang: eng
text: We present an analysis of the coupling between photonic crystal cavities in
different geometries. Inline‐, side‐ and angle‐coupled L3‐geometries are investigated
numerically in three dimensions. Asymmetric mode splitting of the fundamental
mode for the L3‐cavity is shown for all geometrical setups evidencing for strong
cavity‐cavity interactions. The coupling efficiency for the fundamental mode is
shown to be best for a 30° angle between the cavity‐centers due to the direction
of in‐plane leackage out of the cavites.
article_number: 46-48
author:
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: S.
full_name: Declair, S.
last_name: Declair
- first_name: J.
full_name: Förstner, J.
last_name: Förstner
citation:
ama: Meier T, Declair S, Förstner J. Numerical Analysis of Coupled Photonic Crystal
Cavities. AIP Conference Proceedings. 2010;1291(46). doi:10.1063/1.3506125
apa: Meier, T., Declair, S., & Förstner, J. (2010). Numerical Analysis of Coupled
Photonic Crystal Cavities. AIP Conference Proceedings, 1291(46),
Article 46–48. https://doi.org/10.1063/1.3506125
bibtex: '@article{Meier_Declair_Förstner_2010, title={Numerical Analysis of Coupled
Photonic Crystal Cavities}, volume={1291}, DOI={10.1063/1.3506125},
number={4646–48}, journal={AIP Conference Proceedings}, publisher={American Institute
of Physics}, author={Meier, Torsten and Declair, S. and Förstner, J.}, year={2010}
}'
chicago: Meier, Torsten, S. Declair, and J. Förstner. “Numerical Analysis of Coupled
Photonic Crystal Cavities.” AIP Conference Proceedings 1291, no. 46 (2010).
https://doi.org/10.1063/1.3506125.
ieee: 'T. Meier, S. Declair, and J. Förstner, “Numerical Analysis of Coupled Photonic
Crystal Cavities,” AIP Conference Proceedings, vol. 1291, no. 46, Art.
no. 46–48, 2010, doi: 10.1063/1.3506125.'
mla: Meier, Torsten, et al. “Numerical Analysis of Coupled Photonic Crystal Cavities.”
AIP Conference Proceedings, vol. 1291, no. 46, 46–48, American Institute
of Physics, 2010, doi:10.1063/1.3506125.
short: T. Meier, S. Declair, J. Förstner, AIP Conference Proceedings 1291 (2010).
date_created: 2023-04-19T10:57:09Z
date_updated: 2023-04-19T10:57:12Z
department:
- _id: '293'
doi: 10.1063/1.3506125
intvolume: ' 1291'
issue: '46 '
language:
- iso: eng
main_file_link:
- url: https://aip.scitation.org/doi/abs/10.1063/1.3506125
publication: AIP Conference Proceedings
publication_status: published
publisher: American Institute of Physics
status: public
title: Numerical Analysis of Coupled Photonic Crystal Cavities
type: journal_article
user_id: '49063'
volume: 1291
year: '2010'
...
---
_id: '24980'
abstract:
- lang: eng
text: We discuss transport and localization properties on the insulating side of
the disorder dominated superconductor-insulator transition, described in terms
of the dirty boson model. Analyzing the spectral properties of the interacting
bosons in the absence of phonons, we argue that the Bose glass phase admits three
distinct regimes. For strongest disorder the boson system is a fully localized,
perfect insulator at any temperature. At smaller disorder, only the low temperature
phase exhibits perfect insulation while delocalization takes place above a finite
temperature. We argue that a third phase must intervene between these perfect
insulators and the superconductor. This conducting Bose glass phase is characterized
by a mobility edge in the many body spectrum, located at finite energy above the
ground state. In this insulating regime purely electronically activated transport
occurs, with a conductivity following an Arrhenius law at asymptotically low temperatures,
while a tendency to superactivation is predicted at higher T. These predictions
are in good agreement with recent transport experiments in highly disordered films
of superconducting materials.
author:
- first_name: N.
full_name: Gögh, N.
last_name: Gögh
- first_name: P.
full_name: Thomas, P.
last_name: Thomas
- first_name: I.
full_name: Kuznetsova, I.
last_name: Kuznetsova
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: I.
full_name: Varga, I.
last_name: Varga
citation:
ama: 'Gögh N, Thomas P, Kuznetsova I, Meier T, Varga I. Localization of excitons
in weakly disordered semiconductor structures: A model study. Annalen der Physik.
2010;18(12):905-909. doi:10.1002/andp.20095211219'
apa: 'Gögh, N., Thomas, P., Kuznetsova, I., Meier, T., & Varga, I. (2010). Localization
of excitons in weakly disordered semiconductor structures: A model study. Annalen
Der Physik, 18(12), 905–909. https://doi.org/10.1002/andp.20095211219'
bibtex: '@article{Gögh_Thomas_Kuznetsova_Meier_Varga_2010, title={Localization of
excitons in weakly disordered semiconductor structures: A model study}, volume={18},
DOI={10.1002/andp.20095211219},
number={12}, journal={Annalen der Physik}, author={Gögh, N. and Thomas, P. and
Kuznetsova, I. and Meier, Torsten and Varga, I.}, year={2010}, pages={905–909}
}'
chicago: 'Gögh, N., P. Thomas, I. Kuznetsova, Torsten Meier, and I. Varga. “Localization
of Excitons in Weakly Disordered Semiconductor Structures: A Model Study.” Annalen
Der Physik 18, no. 12 (2010): 905–9. https://doi.org/10.1002/andp.20095211219.'
ieee: 'N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, and I. Varga, “Localization
of excitons in weakly disordered semiconductor structures: A model study,” Annalen
der Physik, vol. 18, no. 12, pp. 905–909, 2010, doi: 10.1002/andp.20095211219.'
mla: 'Gögh, N., et al. “Localization of Excitons in Weakly Disordered Semiconductor
Structures: A Model Study.” Annalen Der Physik, vol. 18, no. 12, 2010,
pp. 905–09, doi:10.1002/andp.20095211219.'
short: N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, I. Varga, Annalen Der Physik
18 (2010) 905–909.
date_created: 2021-09-24T08:06:30Z
date_updated: 2023-04-19T11:13:00Z
department:
- _id: '15'
- _id: '170'
- _id: '293'
- _id: '230'
doi: 10.1002/andp.20095211219
intvolume: ' 18'
issue: '12'
language:
- iso: eng
page: 905-909
publication: Annalen der Physik
publication_identifier:
issn:
- 0003-3804
- 1521-3889
publication_status: published
status: public
title: 'Localization of excitons in weakly disordered semiconductor structures: A
model study'
type: journal_article
user_id: '49063'
volume: 18
year: '2010'
...
---
_id: '23480'
abstract:
- lang: eng
text: We discuss transport and localization properties on the insulating side of
the disorder dominated superconductor-insulator transition, described in terms
of the dirty boson model. Analyzing the spectral properties of the interacting
bosons in the absence of phonons, we argue that the Bose glass phase admits three
distinct regimes. For strongest disorder the boson system is a fully localized,
perfect insulator at any temperature. At smaller disorder, only the low temperature
phase exhibits perfect insulation while delocalization takes place above a finite
temperature. We argue that a third phase must intervene between these perfect
insulators and the superconductor. This conducting Bose glass phase is characterized
by a mobility edge in the many body spectrum, located at finite energy above the
ground state. In this insulating regime purely electronically activated transport
occurs, with a conductivity following an Arrhenius law at asymptotically low temperatures,
while a tendency to superactivation is predicted at higher T. These predictions
are in good agreement with recent transport experiments in highly disordered films
of superconducting materials.
author:
- first_name: N.
full_name: Gögh, N.
last_name: Gögh
- first_name: P.
full_name: Thomas, P.
last_name: Thomas
- first_name: I.
full_name: Kuznetsova, I.
last_name: Kuznetsova
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: I.
full_name: Varga, I.
last_name: Varga
citation:
ama: 'Gögh N, Thomas P, Kuznetsova I, Meier T, Varga I. Localization of excitons
in weakly disordered semiconductor structures: A model study. Annalen der Physik.
2010;(12):905-909. doi:10.1002/andp.200910382'
apa: 'Gögh, N., Thomas, P., Kuznetsova, I., Meier, T., & Varga, I. (2010). Localization
of excitons in weakly disordered semiconductor structures: A model study. Annalen
Der Physik, 12, 905–909. https://doi.org/10.1002/andp.200910382'
bibtex: '@article{Gögh_Thomas_Kuznetsova_Meier_Varga_2010, title={Localization of
excitons in weakly disordered semiconductor structures: A model study}, DOI={10.1002/andp.200910382}, number={12},
journal={Annalen der Physik}, author={Gögh, N. and Thomas, P. and Kuznetsova,
I. and Meier, Torsten and Varga, I.}, year={2010}, pages={905–909} }'
chicago: 'Gögh, N., P. Thomas, I. Kuznetsova, Torsten Meier, and I. Varga. “Localization
of Excitons in Weakly Disordered Semiconductor Structures: A Model Study.” Annalen
Der Physik, no. 12 (2010): 905–9. https://doi.org/10.1002/andp.200910382.'
ieee: 'N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, and I. Varga, “Localization
of excitons in weakly disordered semiconductor structures: A model study,” Annalen
der Physik, no. 12, pp. 905–909, 2010, doi: 10.1002/andp.200910382.'
mla: 'Gögh, N., et al. “Localization of Excitons in Weakly Disordered Semiconductor
Structures: A Model Study.” Annalen Der Physik, no. 12, 2010, pp. 905–09,
doi:10.1002/andp.200910382.'
short: N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, I. Varga, Annalen Der Physik
(2010) 905–909.
date_created: 2021-08-24T08:58:35Z
date_updated: 2023-04-19T11:12:57Z
department:
- _id: '15'
- _id: '170'
- _id: '293'
- _id: '230'
doi: 10.1002/andp.200910382
issue: '12'
language:
- iso: eng
page: 905-909
publication: Annalen der Physik
publication_identifier:
issn:
- 0003-3804
- 1521-3889
publication_status: published
status: public
title: 'Localization of excitons in weakly disordered semiconductor structures: A
model study'
type: journal_article
user_id: '49063'
year: '2010'
...
---
_id: '18558'
abstract:
- lang: eng
text: We present an implementation of the GW approximation for the electronic self-energy
within the full-potential linearized augmented-plane-wave (FLAPW) method. The
algorithm uses an all-electron mixed product basis for the representation of response
matrices and related quantities. This basis is derived from the FLAPW basis and
is exact for wave-function products. The correlation part of the self-energy is
calculated on the imaginary-frequency axis with a subsequent analytic continuation
to the real axis. As an alternative we can perform the frequency convolution of
the Green function G and the dynamically screened Coulomb interaction W explicitly
by a contour integration. The singularity of the bare and screened interaction
potentials gives rise to a numerically important self-energy contribution, which
we treat analytically to achieve good convergence with respect to the k-point
sampling. As numerical realizations of the GW approximation typically suffer from
the high computational expense required for the evaluation of the nonlocal and
frequency-dependent self-energy, we demonstrate how the algorithm can be made
very efficient by exploiting spatial and time-reversal symmetry as well as by
applying an optimization of the mixed product basis that retains only the numerically
important contributions of the electron-electron interaction. This optimization
step reduces the basis size without compromising the accuracy and accelerates
the code considerably. Furthermore, we demonstrate that one can employ an extrapolar
approximation for high-lying states to reduce the number of empty states that
must be taken into account explicitly in the construction of the polarization
function and the self-energy. We show convergence tests, CPU timings, and results
for prototype semiconductors and insulators as well as ferromagnetic nickel.
article_number: '125102'
article_type: original
author:
- first_name: Christoph
full_name: Friedrich, Christoph
last_name: Friedrich
- first_name: Stefan
full_name: Blügel, Stefan
last_name: Blügel
- first_name: Arno
full_name: Schindlmayr, Arno
id: '458'
last_name: Schindlmayr
orcid: 0000-0002-4855-071X
citation:
ama: Friedrich C, Blügel S, Schindlmayr A. Efficient implementation of the GW approximation
within the all-electron FLAPW method. Physical Review B. 2010;81(12). doi:10.1103/PhysRevB.81.125102
apa: Friedrich, C., Blügel, S., & Schindlmayr, A. (2010). Efficient implementation
of the GW approximation within the all-electron FLAPW method. Physical Review
B, 81(12), Article 125102. https://doi.org/10.1103/PhysRevB.81.125102
bibtex: '@article{Friedrich_Blügel_Schindlmayr_2010, title={Efficient implementation
of the GW approximation within the all-electron FLAPW method}, volume={81}, DOI={10.1103/PhysRevB.81.125102},
number={12125102}, journal={Physical Review B}, publisher={American Physical Society},
author={Friedrich, Christoph and Blügel, Stefan and Schindlmayr, Arno}, year={2010}
}'
chicago: Friedrich, Christoph, Stefan Blügel, and Arno Schindlmayr. “Efficient Implementation
of the GW Approximation within the All-Electron FLAPW Method.” Physical Review
B 81, no. 12 (2010). https://doi.org/10.1103/PhysRevB.81.125102.
ieee: 'C. Friedrich, S. Blügel, and A. Schindlmayr, “Efficient implementation of
the GW approximation within the all-electron FLAPW method,” Physical Review
B, vol. 81, no. 12, Art. no. 125102, 2010, doi: 10.1103/PhysRevB.81.125102.'
mla: Friedrich, Christoph, et al. “Efficient Implementation of the GW Approximation
within the All-Electron FLAPW Method.” Physical Review B, vol. 81, no.
12, 125102, American Physical Society, 2010, doi:10.1103/PhysRevB.81.125102.
short: C. Friedrich, S. Blügel, A. Schindlmayr, Physical Review B 81 (2010).
date_created: 2020-08-28T11:26:20Z
date_updated: 2023-04-20T14:57:10Z
ddc:
- '530'
department:
- _id: '296'
- _id: '35'
- _id: '15'
- _id: '170'
doi: 10.1103/PhysRevB.81.125102
external_id:
arxiv:
- '1003.0316'
isi:
- '000276248900039'
file:
- access_level: open_access
content_type: application/pdf
creator: schindlm
date_created: 2020-08-28T11:29:11Z
date_updated: 2020-08-30T15:06:54Z
description: © 2010 American Physical Society
file_id: '18559'
file_name: PhysRevB.81.125102.pdf
file_size: 330212
relation: main_file
title: Efficient implementation of the GW approximation within the all-electron
FLAPW method
file_date_updated: 2020-08-30T15:06:54Z
has_accepted_license: '1'
intvolume: ' 81'
isi: '1'
issue: '12'
language:
- iso: eng
oa: '1'
publication: Physical Review B
publication_identifier:
eissn:
- 1550-235X
issn:
- 1098-0121
publication_status: published
publisher: American Physical Society
quality_controlled: '1'
related_material:
record:
- id: '22761'
relation: other
status: public
status: public
title: Efficient implementation of the GW approximation within the all-electron FLAPW
method
type: journal_article
user_id: '16199'
volume: 81
year: '2010'
...
---
_id: '44064'
abstract:
- lang: eng
text: We compute photocurrents generated by femtosecond single-color laser pulses
in non-centrosymmetric semiconductor quantum wells by combining a 14 x 14 k.p
band structure theory with multi-band semiconductor Bloch equations. The transient
photocurrents are investigated experimentally by measuring the associated Terahertz
emission. The dependencies of the photocurrent and the Terahertz emission on the
excitation conditions are discussed for (110)-oriented GaAs quantum wells. The
comparison between theory and experiment shows a good agreement.
author:
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: Huynh Thanh
full_name: Duc, Huynh Thanh
last_name: Duc
- first_name: Jens
full_name: Foerstner, Jens
last_name: Foerstner
- first_name: S.
full_name: Priyadarshi, S.
last_name: Priyadarshi
- first_name: Ana Maria
full_name: Racu, Ana Maria
last_name: Racu
- first_name: Klaus
full_name: Pierz, Klaus
last_name: Pierz
- first_name: Uwe
full_name: Siegner, Uwe
last_name: Siegner
- first_name: Mark
full_name: Bieler, Mark
last_name: Bieler
citation:
ama: 'Meier T, Duc HT, Foerstner J, et al. Experimental and theoretical investigations
of photocurrents in non-centrosymmetric semiconductor quantum wells. In: DPG
Spring Meeting 2010 . Vol 45. Verhandlungen der Deutschen Physikalischen Gesellschaft.
; 2010.'
apa: Meier, T., Duc, H. T., Foerstner, J., Priyadarshi, S., Racu, A. M., Pierz,
K., Siegner, U., & Bieler, M. (2010). Experimental and theoretical investigations
of photocurrents in non-centrosymmetric semiconductor quantum wells. DPG Spring
Meeting 2010 , 45(3).
bibtex: '@inproceedings{Meier_Duc_Foerstner_Priyadarshi_Racu_Pierz_Siegner_Bieler_2010,
series={Verhandlungen der Deutschen Physikalischen Gesellschaft}, title={Experimental
and theoretical investigations of photocurrents in non-centrosymmetric semiconductor
quantum wells}, volume={45}, number={3}, booktitle={DPG Spring meeting 2010 },
author={Meier, Torsten and Duc, Huynh Thanh and Foerstner, Jens and Priyadarshi,
S. and Racu, Ana Maria and Pierz, Klaus and Siegner, Uwe and Bieler, Mark}, year={2010},
collection={Verhandlungen der Deutschen Physikalischen Gesellschaft} }'
chicago: Meier, Torsten, Huynh Thanh Duc, Jens Foerstner, S. Priyadarshi, Ana Maria
Racu, Klaus Pierz, Uwe Siegner, and Mark Bieler. “Experimental and Theoretical
Investigations of Photocurrents in Non-Centrosymmetric Semiconductor Quantum Wells.”
In DPG Spring Meeting 2010 , Vol. 45. Verhandlungen Der Deutschen Physikalischen
Gesellschaft, 2010.
ieee: T. Meier et al., “Experimental and theoretical investigations of photocurrents
in non-centrosymmetric semiconductor quantum wells,” in DPG Spring meeting
2010 , Regensburg, Germany, 2010, vol. 45, no. 3.
mla: Meier, Torsten, et al. “Experimental and Theoretical Investigations of Photocurrents
in Non-Centrosymmetric Semiconductor Quantum Wells.” DPG Spring Meeting 2010
, vol. 45, no. 3, 2010.
short: 'T. Meier, H.T. Duc, J. Foerstner, S. Priyadarshi, A.M. Racu, K. Pierz, U.
Siegner, M. Bieler, in: DPG Spring Meeting 2010 , 2010.'
conference:
end_date: 2010-03-26
location: Regensburg, Germany
name: 'DPG Spring meeting 2010 '
start_date: 2010-03-21
date_created: 2023-04-19T11:01:12Z
date_updated: 2023-05-01T12:48:34Z
department:
- _id: '293'
intvolume: ' 45'
issue: '3'
language:
- iso: eng
main_file_link:
- url: https://www.dpg-verhandlungen.de/year/2010/conference/regensburg/part/hl/session/5/contribution/6
publication: 'DPG Spring meeting 2010 '
publication_identifier:
issn:
- 0420-0195
publication_status: published
series_title: Verhandlungen der Deutschen Physikalischen Gesellschaft
status: public
title: Experimental and theoretical investigations of photocurrents in non-centrosymmetric
semiconductor quantum wells
type: conference
user_id: '49063'
volume: 45
year: '2010'
...
---
_id: '44067'
abstract:
- lang: eng
text: Semiconductor nanostructures always contain a certain degree of disorder due
to interface roughness and/or alloy disorder. The disorder has significant influence
on the optical properties, e.g., excitonic absorption spectra. An adaptive wavelet
approach for the solution of the excitonic Schroedinger equation, i.e., the semiconductor
Bloch equation for the interband coherence linear in the external field, has been
developed and applied to compute absorption spectra and/or wave functions. Results
obtained for a thin GaAs semiconductor quantum wire considering a number of different
model disorder potentials are presented and discussed.
author:
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: Christian
full_name: Mollet, Christian
last_name: Mollet
- first_name: Angela
full_name: Kunoth, Angela
last_name: Kunoth
citation:
ama: 'Meier T, Mollet C, Kunoth A. A numerical adaptive wavelet approach to excitonic
absorption spectra of disordered semiconductor nanostructures. In: DPG Spring
Meeting 2010. Vol 45. Verhandlungen der Deutschen Physikalischen Gesellschaft.
; 2010.'
apa: Meier, T., Mollet, C., & Kunoth, A. (2010). A numerical adaptive wavelet
approach to excitonic absorption spectra of disordered semiconductor nanostructures.
DPG Spring Meeting 2010, 45(3).
bibtex: '@inproceedings{Meier_Mollet_Kunoth_2010, series={Verhandlungen der Deutschen
Physikalischen Gesellschaft}, title={A numerical adaptive wavelet approach to
excitonic absorption spectra of disordered semiconductor nanostructures}, volume={45},
number={3}, booktitle={DPG Spring meeting 2010}, author={Meier, Torsten and Mollet,
Christian and Kunoth, Angela}, year={2010}, collection={Verhandlungen der Deutschen
Physikalischen Gesellschaft} }'
chicago: Meier, Torsten, Christian Mollet, and Angela Kunoth. “A Numerical Adaptive
Wavelet Approach to Excitonic Absorption Spectra of Disordered Semiconductor Nanostructures.”
In DPG Spring Meeting 2010, Vol. 45. Verhandlungen Der Deutschen Physikalischen
Gesellschaft, 2010.
ieee: T. Meier, C. Mollet, and A. Kunoth, “A numerical adaptive wavelet approach
to excitonic absorption spectra of disordered semiconductor nanostructures,” in
DPG Spring meeting 2010, Regensburg, Germany, 2010, vol. 45, no. 3.
mla: Meier, Torsten, et al. “A Numerical Adaptive Wavelet Approach to Excitonic
Absorption Spectra of Disordered Semiconductor Nanostructures.” DPG Spring
Meeting 2010, vol. 45, no. 3, 2010.
short: 'T. Meier, C. Mollet, A. Kunoth, in: DPG Spring Meeting 2010, 2010.'
conference:
end_date: 2010-03-26
location: Regensburg, Germany
name: DPG Spring meeting 2010
start_date: 2010-03-21
date_created: 2023-04-19T11:06:53Z
date_updated: 2023-05-01T12:56:11Z
department:
- _id: '293'
intvolume: ' 45'
issue: '3'
language:
- iso: eng
main_file_link:
- url: https://www.dpg-verhandlungen.de/year/2010/conference/regensburg/part/hl/session/60/contribution/1
publication: DPG Spring meeting 2010
publication_identifier:
issn:
- ' 0420-0195'
publication_status: published
series_title: Verhandlungen der Deutschen Physikalischen Gesellschaft
status: public
title: A numerical adaptive wavelet approach to excitonic absorption spectra of disordered
semiconductor nanostructures
type: conference
user_id: '49063'
volume: 45
year: '2010'
...
---
_id: '44065'
abstract:
- lang: eng
text: The behavior of waveguide plasmon polaritons is studied employing ultrafast
coherent control like schemes for a gold lattice coupled to a photonic waveguide
for the structure. Different models to describe the third-harmonic generation
are presented and the resulting equations are solved numerically. The calculations
are compared to recent experimental data and show good agreement for the most
prominent features in the time-integrated third order intensity.
author:
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: Reinold
full_name: Podzimski, Reinold
last_name: Podzimski
- first_name: Matthias
full_name: Reichelt, Matthias
id: '138'
last_name: Reichelt
- first_name: Tobias
full_name: Utikal, Tobias
last_name: Utikal
- first_name: Harald
full_name: Giessen, Harald
last_name: Giessen
citation:
ama: 'Meier T, Podzimski R, Reichelt M, Utikal T, Giessen H. Controlling the third-harmonic
generation in a metallic photonic crystal coupled to a waveguide. In: DPG Spring
Meeting 2010. Vol 45. Verhandlungen der Deutschen Physikalischen Gesellschaft.
; 2010.'
apa: Meier, T., Podzimski, R., Reichelt, M., Utikal, T., & Giessen, H. (2010).
Controlling the third-harmonic generation in a metallic photonic crystal coupled
to a waveguide. DPG Spring Meeting 2010, 45(3).
bibtex: '@inproceedings{Meier_Podzimski_Reichelt_Utikal_Giessen_2010, series={Verhandlungen
der Deutschen Physikalischen Gesellschaft}, title={Controlling the third-harmonic
generation in a metallic photonic crystal coupled to a waveguide}, volume={45},
number={3}, booktitle={DPG Spring meeting 2010}, author={Meier, Torsten and Podzimski,
Reinold and Reichelt, Matthias and Utikal, Tobias and Giessen, Harald}, year={2010},
collection={Verhandlungen der Deutschen Physikalischen Gesellschaft} }'
chicago: Meier, Torsten, Reinold Podzimski, Matthias Reichelt, Tobias Utikal, and
Harald Giessen. “Controlling the Third-Harmonic Generation in a Metallic Photonic
Crystal Coupled to a Waveguide.” In DPG Spring Meeting 2010, Vol. 45. Verhandlungen
Der Deutschen Physikalischen Gesellschaft, 2010.
ieee: T. Meier, R. Podzimski, M. Reichelt, T. Utikal, and H. Giessen, “Controlling
the third-harmonic generation in a metallic photonic crystal coupled to a waveguide,”
in DPG Spring meeting 2010, Regensburg, Germany, 2010, vol. 45, no. 3.
mla: Meier, Torsten, et al. “Controlling the Third-Harmonic Generation in a Metallic
Photonic Crystal Coupled to a Waveguide.” DPG Spring Meeting 2010, vol.
45, no. 3, 2010.
short: 'T. Meier, R. Podzimski, M. Reichelt, T. Utikal, H. Giessen, in: DPG Spring
Meeting 2010, 2010.'
conference:
end_date: 2010-03-26
location: Regensburg, Germany
name: DPG Spring meeting 2010
start_date: 2010-03-21
date_created: 2023-04-19T11:03:20Z
date_updated: 2023-05-01T12:51:52Z
department:
- _id: '293'
intvolume: ' 45'
issue: '3'
language:
- iso: eng
main_file_link:
- url: https://www.dpg-verhandlungen.de/year/2010/conference/regensburg/part/o/session/59/contribution/36
publication: DPG Spring meeting 2010
publication_identifier:
issn:
- 0420-0195
publication_status: published
series_title: Verhandlungen der Deutschen Physikalischen Gesellschaft
status: public
title: Controlling the third-harmonic generation in a metallic photonic crystal coupled
to a waveguide
type: conference
user_id: '49063'
volume: 45
year: '2010'
...
---
_id: '44066'
abstract:
- lang: eng
text: We present a joint theoretical study of the optical properties of GaAs and
AlAs bulk and heterostructures. Thereby, we compare the theoretical description
of optical excitation on several levels of theory. Results obtained from kp theory
are discussed along with data from ab initio calculations within the frameworks
of independent-particle (DFT), independent quasiparticle (GW), or Coulomb-correlated
quasiparticle (BSE) approximation.
author:
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: Marc
full_name: Landmann, Marc
last_name: Landmann
- first_name: Michal
full_name: Pochwala, Michal
last_name: Pochwala
- first_name: Jens
full_name: Foerstner, Jens
last_name: Foerstner
- first_name: Eva
full_name: Rauls, Eva
last_name: Rauls
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
last_name: Schmidt
citation:
ama: 'Meier T, Landmann M, Pochwala M, Foerstner J, Rauls E, Schmidt WG. Theoretical
description of optical properties in III-V semiconductor nanostructures. In: DPG
Spring Meeting 2010. Vol 45. Verhandlungen der Deutschen Physikalischen Gesellschaft.
; 2010.'
apa: Meier, T., Landmann, M., Pochwala, M., Foerstner, J., Rauls, E., & Schmidt,
W. G. (2010). Theoretical description of optical properties in III-V semiconductor
nanostructures. DPG Spring Meeting 2010, 45(3).
bibtex: '@inproceedings{Meier_Landmann_Pochwala_Foerstner_Rauls_Schmidt_2010, series={Verhandlungen
der Deutschen Physikalischen Gesellschaft}, title={Theoretical description of
optical properties in III-V semiconductor nanostructures}, volume={45}, number={3},
booktitle={DPG Spring meeting 2010}, author={Meier, Torsten and Landmann, Marc
and Pochwala, Michal and Foerstner, Jens and Rauls, Eva and Schmidt, Wolf Gero},
year={2010}, collection={Verhandlungen der Deutschen Physikalischen Gesellschaft}
}'
chicago: Meier, Torsten, Marc Landmann, Michal Pochwala, Jens Foerstner, Eva Rauls,
and Wolf Gero Schmidt. “Theoretical Description of Optical Properties in III-V
Semiconductor Nanostructures.” In DPG Spring Meeting 2010, Vol. 45. Verhandlungen
Der Deutschen Physikalischen Gesellschaft, 2010.
ieee: T. Meier, M. Landmann, M. Pochwala, J. Foerstner, E. Rauls, and W. G. Schmidt,
“Theoretical description of optical properties in III-V semiconductor nanostructures,”
in DPG Spring meeting 2010, Regensburg, Germany, 2010, vol. 45, no. 3.
mla: Meier, Torsten, et al. “Theoretical Description of Optical Properties in III-V
Semiconductor Nanostructures.” DPG Spring Meeting 2010, vol. 45, no. 3,
2010.
short: 'T. Meier, M. Landmann, M. Pochwala, J. Foerstner, E. Rauls, W.G. Schmidt,
in: DPG Spring Meeting 2010, 2010.'
conference:
end_date: 2010-03-26
location: Regensburg, Germany
name: DPG Spring meeting 2010
start_date: 2010-03-21
date_created: 2023-04-19T11:05:15Z
date_updated: 2023-05-01T12:54:38Z
department:
- _id: '293'
intvolume: ' 45'
issue: '3'
language:
- iso: eng
main_file_link:
- url: https://www.dpg-verhandlungen.de/year/2010/conference/regensburg/part/hl/session/34/contribution/1
publication: DPG Spring meeting 2010
publication_identifier:
issn:
- 0420-0195
publication_status: published
series_title: Verhandlungen der Deutschen Physikalischen Gesellschaft
status: public
title: Theoretical description of optical properties in III-V semiconductor nanostructures
type: conference
user_id: '49063'
volume: 45
year: '2010'
...
---
_id: '13581'
author:
- first_name: S.
full_name: Wippermann, S.
last_name: Wippermann
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
- first_name: F.
full_name: Bechstedt, F.
last_name: Bechstedt
- first_name: S.
full_name: Chandola, S.
last_name: Chandola
- first_name: K.
full_name: Hinrichs, K.
last_name: Hinrichs
- first_name: M.
full_name: Gensch, M.
last_name: Gensch
- first_name: N.
full_name: Esser, N.
last_name: Esser
- first_name: K.
full_name: Fleischer, K.
last_name: Fleischer
- first_name: J. F.
full_name: McGilp, J. F.
last_name: McGilp
citation:
ama: Wippermann S, Schmidt WG, Bechstedt F, et al. Optical anisotropy of Si(111)-(4
× 1)/(8 × 2)-In nanowires calculated fromfirst-principles. physica status solidi
(c). 2010;7(2):133-136. doi:10.1002/pssc.200982413
apa: Wippermann, S., Schmidt, W. G., Bechstedt, F., Chandola, S., Hinrichs, K.,
Gensch, M., Esser, N., Fleischer, K., & McGilp, J. F. (2010). Optical anisotropy
of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles. Physica
Status Solidi (c), 7(2), 133–136. https://doi.org/10.1002/pssc.200982413
bibtex: '@article{Wippermann_Schmidt_Bechstedt_Chandola_Hinrichs_Gensch_Esser_Fleischer_McGilp_2010,
title={Optical anisotropy of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles},
volume={7}, DOI={10.1002/pssc.200982413},
number={2}, journal={physica status solidi (c)}, author={Wippermann, S. and Schmidt,
Wolf Gero and Bechstedt, F. and Chandola, S. and Hinrichs, K. and Gensch, M. and
Esser, N. and Fleischer, K. and McGilp, J. F.}, year={2010}, pages={133–136} }'
chicago: 'Wippermann, S., Wolf Gero Schmidt, F. Bechstedt, S. Chandola, K. Hinrichs,
M. Gensch, N. Esser, K. Fleischer, and J. F. McGilp. “Optical Anisotropy of Si(111)-(4
× 1)/(8 × 2)-In Nanowires Calculated Fromfirst-Principles.” Physica Status
Solidi (c) 7, no. 2 (2010): 133–36. https://doi.org/10.1002/pssc.200982413.'
ieee: 'S. Wippermann et al., “Optical anisotropy of Si(111)-(4 × 1)/(8 ×
2)-In nanowires calculated fromfirst-principles,” physica status solidi (c),
vol. 7, no. 2, pp. 133–136, 2010, doi: 10.1002/pssc.200982413.'
mla: Wippermann, S., et al. “Optical Anisotropy of Si(111)-(4 × 1)/(8 × 2)-In Nanowires
Calculated Fromfirst-Principles.” Physica Status Solidi (c), vol. 7, no.
2, 2010, pp. 133–36, doi:10.1002/pssc.200982413.
short: S. Wippermann, W.G. Schmidt, F. Bechstedt, S. Chandola, K. Hinrichs, M. Gensch,
N. Esser, K. Fleischer, J.F. McGilp, Physica Status Solidi (c) 7 (2010) 133–136.
date_created: 2019-10-01T14:34:59Z
date_updated: 2025-12-05T12:45:21Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '35'
- _id: '230'
- _id: '27'
doi: 10.1002/pssc.200982413
intvolume: ' 7'
issue: '2'
language:
- iso: eng
page: 133-136
project:
- _id: '52'
name: Computing Resources Provided by the Paderborn Center for Parallel Computing
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
- 1610-1642
publication_status: published
status: public
title: Optical anisotropy of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles
type: journal_article
user_id: '16199'
volume: 7
year: '2010'
...
---
_id: '13573'
abstract:
- lang: eng
text: Given the vast range of lithium niobate (LiNbO3) applications, the knowledge
about its electronic and optical properties is surprisingly limited. The direct
band gap of 3.7 eV for the ferroelectric phase – frequently cited in the literature
– is concluded from optical experiments. Recent theoretical investigations show
that the electronic band‐structure and optical properties are very sensitive to
quasiparticle and electron‐hole attraction effects, which were included using
the GW approximation for the electron self‐energy and the Bethe‐Salpeter equation
respectively, both based on a model screening function. The calculated fundamental
gap was found to be at least 1 eV larger than the experimental value. To resolve
this discrepancy we performed first‐principles GW calculations for lithium niobate
using the full‐potential linearized augmented plane‐wave (FLAPW) method. Thereby
we use the parameter‐free random phase approximation for a realistic description
of the nonlocal and energydependent screening. This leads to a band gap of about
4.7 (4.2) eV for ferro(para)‐electric lithium niobate.
article_type: original
author:
- first_name: Christian
full_name: Thierfelder, Christian
last_name: Thierfelder
- first_name: Simone
full_name: Sanna, Simone
last_name: Sanna
- first_name: Arno
full_name: Schindlmayr, Arno
id: '458'
last_name: Schindlmayr
orcid: 0000-0002-4855-071X
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
citation:
ama: Thierfelder C, Sanna S, Schindlmayr A, Schmidt WG. Do we know the band gap
of lithium niobate? Physica Status Solidi C. 2010;7(2):362-365. doi:10.1002/pssc.200982473
apa: Thierfelder, C., Sanna, S., Schindlmayr, A., & Schmidt, W. G. (2010). Do
we know the band gap of lithium niobate? Physica Status Solidi C, 7(2),
362–365. https://doi.org/10.1002/pssc.200982473
bibtex: '@article{Thierfelder_Sanna_Schindlmayr_Schmidt_2010, title={Do we know
the band gap of lithium niobate?}, volume={7}, DOI={10.1002/pssc.200982473},
number={2}, journal={Physica Status Solidi C}, publisher={Wiley-VCH}, author={Thierfelder,
Christian and Sanna, Simone and Schindlmayr, Arno and Schmidt, Wolf Gero}, year={2010},
pages={362–365} }'
chicago: 'Thierfelder, Christian, Simone Sanna, Arno Schindlmayr, and Wolf Gero
Schmidt. “Do We Know the Band Gap of Lithium Niobate?” Physica Status Solidi
C 7, no. 2 (2010): 362–65. https://doi.org/10.1002/pssc.200982473.'
ieee: 'C. Thierfelder, S. Sanna, A. Schindlmayr, and W. G. Schmidt, “Do we know
the band gap of lithium niobate?,” Physica Status Solidi C, vol. 7, no.
2, pp. 362–365, 2010, doi: 10.1002/pssc.200982473.'
mla: Thierfelder, Christian, et al. “Do We Know the Band Gap of Lithium Niobate?”
Physica Status Solidi C, vol. 7, no. 2, Wiley-VCH, 2010, pp. 362–65, doi:10.1002/pssc.200982473.
short: C. Thierfelder, S. Sanna, A. Schindlmayr, W.G. Schmidt, Physica Status Solidi
C 7 (2010) 362–365.
conference:
end_date: 2009-07-10
location: Weimar
name: 12th International Conference on the Formation of Semiconductor Interfaces
start_date: 2009-07-05
date_created: 2019-10-01T09:18:29Z
date_updated: 2025-12-05T13:01:45Z
ddc:
- '530'
department:
- _id: '295'
- _id: '296'
- _id: '15'
- _id: '35'
- _id: '230'
- _id: '27'
- _id: '170'
doi: 10.1002/pssc.200982473
external_id:
isi:
- '000284313000057'
file:
- access_level: closed
content_type: application/pdf
creator: schindlm
date_created: 2020-08-28T14:39:40Z
date_updated: 2020-08-30T15:07:56Z
description: © 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
file_id: '18583'
file_name: pssc.200982473.pdf
file_size: 212674
relation: main_file
title: Do we know the band gap of lithium niobate?
file_date_updated: 2020-08-30T15:07:56Z
has_accepted_license: '1'
intvolume: ' 7'
isi: '1'
issue: '2'
language:
- iso: eng
page: 362-365
project:
- _id: '52'
name: Computing Resources Provided by the Paderborn Center for Parallel Computing
publication: Physica Status Solidi C
publication_identifier:
eissn:
- 1610-1642
issn:
- 1862-6351
publication_status: published
publisher: Wiley-VCH
quality_controlled: '1'
status: public
title: Do we know the band gap of lithium niobate?
type: journal_article
user_id: '16199'
volume: 7
year: '2010'
...