@inproceedings{21703, author = {{Lindemann, C. and Reiher, T. and Koch, R.}}, booktitle = {{Paris Space Week}}, title = {{{Guidelines for a sustainable and economic selection of part candidates for space applications using additive manufacturing}}}, year = {{2015}}, } @inproceedings{22031, author = {{Knoop, F. and Schöppner, Volker}}, booktitle = {{ASPE Spring Topical Meeting}}, pages = {{26--31}}, title = {{{Analysis and Optimization of the Dimensional Accuracy for FDM Parts manufactured with ABS-M30}}}, doi = {{https://www.researchgate.net/publication/283735736_Analysis_and_optimization_of_the_dimensional_accuracy_for_FDM_parts_manufactured_with_ABS-M30}}, year = {{2015}}, } @inproceedings{22044, abstract = {{Fused Deposition Modeling (FDM) is an Additive Manufacturing (AM) technology which is used for prototypes, single-part production and also small batch productions. For use as a final product, it is important that the parts have good mechanical properties, high dimensional accuracy and smooth surfaces. The knowledge of the mechanical properties is very important for the design engineer when it comes to the component design. End-use products out of the FDM process have to resist applied forces. In this paper, investigations were conducted with the polymer Polyamide 12 (FDM Nylon 12) from Stratasys Inc. This polymer can be processed with three different tip sizes resulting in different layer thicknesses from 178 µm to 330 µm. Thus, the mechanical properties were determined for these layer thicknesses and for different orientations on the build platform. In addition to the mechanical properties the thermal properties (e.g. with a DSC analysis) are also investigated.}}, author = {{Knoop, F. and Schöppner, Volker}}, booktitle = {{26th Annual International Solid Freeform Fabrication Symposium}}, pages = {{935--948}}, title = {{{Mechanical and Thermal Properties of FDM Parts manufactured with Polyamide 12}}}, doi = {{http://utw10945.utweb.utexas.edu/sites/default/files/2015/2015-77-Knoop.pdf}}, volume = {{26}}, year = {{2015}}, } @inproceedings{6259, author = {{Fischer, Holger Gerhard and Yigitbas, Enes and Sauer, Stefan}}, booktitle = {{Proceedings of 15th IFIP TC.13 International Conference on Human-Computer Interaction (INTERACT)}}, location = {{Bamberg}}, pages = {{215--221}}, publisher = {{University of Bamberg Press}}, title = {{{Integrating Human-Centered and Model-Driven Methods in Agile UI Development}}}, volume = {{22}}, year = {{2015}}, } @inproceedings{6262, author = {{Fischer, Holger Gerhard and Polkehn, Knut and Geis, Thomas and Kluge, Oliver and Behrenbruch, Kay and Riedemann, Catharina}}, booktitle = {{Mensch und Computer 2015 - Usability Professionals}}, pages = {{371--378}}, publisher = {{De Gruyter, Berlin}}, title = {{{Qualitätsdimensionen für interaktive Systeme - Stand der Arbeiten UPA AK Qualitätsstandards}}}, year = {{2015}}, } @proceedings{6308, editor = {{Fischer, Holger Gerhard and Endmann, Anja and Krökel, Malte}}, isbn = {{978-3-11-044332-5}}, publisher = {{De Gruyter}}, title = {{{Mensch und Computer 2015 - Usability Professionals. Tagungsband}}}, year = {{2015}}, } @article{7217, author = {{Jostmeier, Thorben and Wecker, Tobias and Reuter, Dirk and As, Donat Josef and Betz, Markus}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{21}}, publisher = {{AIP Publishing}}, title = {{{Ultrafast carrier dynamics and resonant inter-miniband nonlinearity of a cubic GaN/AlN superlattice}}}, doi = {{10.1063/1.4936330}}, volume = {{107}}, year = {{2015}}, } @article{7218, author = {{Debus, J. and Kudlacik, D. and Sapega, V. F. and Dunker, D. and Bohn, P. and Paßmann, F. and Braukmann, D. and Rautert, J. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Bayer, M.}}, issn = {{1098-0121}}, journal = {{Physical Review B}}, number = {{19}}, publisher = {{American Physical Society (APS)}}, title = {{{Nuclear spin polarization in the electron spin-flip Raman scattering of singly charged (In,Ga)As/GaAs quantum dots}}}, doi = {{10.1103/physrevb.92.195421}}, volume = {{92}}, year = {{2015}}, } @article{7219, author = {{Kuhlmann, Andreas V. and Prechtel, Jonathan H. and Houel, Julien and Ludwig, Arne and Reuter, Dirk and Wieck, Andreas D. and Warburton, Richard J.}}, issn = {{2041-1723}}, journal = {{Nature Communications}}, number = {{1}}, publisher = {{Springer Nature}}, title = {{{Transform-limited single photons from a single quantum dot}}}, doi = {{10.1038/ncomms9204}}, volume = {{6}}, year = {{2015}}, } @article{7220, author = {{Mehta, M. and Reuter, Dirk and Kamruddin, M. and Tyagi, A. K. and Wieck, A. D.}}, issn = {{1793-2920}}, journal = {{Nano}}, number = {{04}}, publisher = {{World Scientific Pub Co Pte Lt}}, title = {{{Influence of Post-Implantation Annealing Parameters on the Focused Ion Beam Directed Nucleation of InAs Quantum Dots}}}, doi = {{10.1142/s1793292015500496}}, volume = {{10}}, year = {{2015}}, } @article{7221, author = {{Chen, J. C. H. and Klochan, O. and Micolich, A. P. and Das Gupta, K. and Sfigakis, F. and Ritchie, D. A. and Trunov, K. and Reuter, Dirk and Wieck, A. D. and Hamilton, A. R.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{18}}, publisher = {{AIP Publishing}}, title = {{{Fabrication and characterisation of gallium arsenide ambipolar quantum point contacts}}}, doi = {{10.1063/1.4918934}}, volume = {{106}}, year = {{2015}}, } @article{7222, author = {{Finke, A. and Ruth, M. and Scholz, S. and Ludwig, A. and Wieck, A. D. and Reuter, Dirk and Pawlis, A.}}, issn = {{1098-0121}}, journal = {{Physical Review B}}, number = {{3}}, publisher = {{American Physical Society (APS)}}, title = {{{Extending the spectral range of CdSe/ZnSe quantum wells by strain engineering}}}, doi = {{10.1103/physrevb.91.035409}}, volume = {{91}}, year = {{2015}}, } @article{4276, abstract = {{We analyse an InAs/GaAs-based electric field tunable single quantum dot diode with a thin tunnelling barrier between a buried n þ -back contact and a quantum dot layer. In voltage- dependent photoluminescence measurements, we observe rich signatures from spatially direct and indirect transitions from the wetting layer and from a single quantum dot. By analysing the Stark effect, we show that the indirect transitions result from a recombination between confined holes in the wetting or quantum dot layer with electrons from the edge of the Fermi sea in the back contact. Using a 17 nm tunnel barrier which provides comparably weak tunnel coupling allowed us to observe clear signatures of direct and corresponding indirect lines for a series of neutral and positively charged quantum dot states.}}, author = {{Rai, Ashish K. and Gordon, Simon and Ludwig, Arne and Wieck, Andreas D. and Zrenner, Artur and Reuter, Dirk}}, issn = {{0370-1972}}, journal = {{physica status solidi (b)}}, keywords = {{excitons, GaAs, InAs, quantum dots, spatially indirect transitions, Stark shift}}, number = {{3}}, pages = {{437--441}}, publisher = {{Wiley}}, title = {{{Spatially indirect transitions in electric field tunable quantum dot diodes}}}, doi = {{10.1002/pssb.201552591}}, volume = {{253}}, year = {{2015}}, } @article{4331, abstract = {{We report about the fabrication and analysis of high Q photonic crystal cavities with metallic Schottky-contacts. The structures are based on GaAs n-i membranes with an InGaAs quantum well in the i-region and nanostructured low ohmic metal top-gates. They are designed for photocurrent readout within the cavity and fast electric manipulations. The cavity structures are characterized by photoluminescence and photocurrent spectroscopy under resonant excitation. We find strong cavity resonances in the photocurrent spectra and surprisingly high Q-factors up to 6500. Temperature dependent photocurrent measurements in the region between 4.5K and 310K show an exponential enhancement of the photocurrent signal and an external quantum efficiency up to 0.26.}}, author = {{Quiring, W. and Al-Hmoud, M. and Rai, A. and Reuter, Dirk and Wieck, A. D. and Zrenner, Artur}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{4}}, publisher = {{AIP Publishing}}, title = {{{Photonic crystal cavities with metallic Schottky contacts}}}, doi = {{10.1063/1.4928038}}, volume = {{107}}, year = {{2015}}, } @misc{5413, author = {{Funke, Lukas}}, publisher = {{Universität Paderborn}}, title = {{{An LLVM Based Toolchain for Transparent Acceleration of Digital Image Processing Applications using FPGA Overlay Architectures}}}, year = {{2015}}, } @misc{5416, author = {{Löcke, Thomas}}, publisher = {{Universität Paderborn}}, title = {{{Instance-Specific Computing in Hard- and Software for Faster Solving of Complex Problems}}}, year = {{2015}}, } @misc{5419, author = {{Wallaschek, Felix}}, publisher = {{Universität Paderborn}}, title = {{{Accelerating Programmable Logic Controllers with the use of FPGAs}}}, year = {{2015}}, } @article{6520, abstract = {{We investigate the response of a polariton laser driven slightly off-resonantly using light fields differing from the routinely studied coherent pump sources. The response to driving light fields with thermal and displaced thermal statistics with varying correlation times shows significant differences in the transmitted intensity, its noise, and the position of the nonlinear threshold. We predict that adding more photons on average may actually reduce the transmission through the polariton system.}}, author = {{Assmann, Marc and Bayer, Manfred}}, issn = {{1050-2947}}, journal = {{PHYSICAL REVIEW A}}, number = {{5}}, title = {{{Stochastic pumping of a polariton fluid}}}, doi = {{10.1103/PhysRevA.91.053835}}, volume = {{91}}, year = {{2015}}, } @article{6522, abstract = {{An electric field applied to a semiconductor reduces its crystal symmetry and modifies its electronic structure which is expected to result in changes of the linear and nonlinear response to optical excitation. In GaAs, we observe experimentally strong electric field effects on the optical second (SHG) and third (THG) harmonic generation. The SHG signal for the laser-light k vector parallel to the [001] crystal axis is symmetry forbidden in the electric-dipole approximation, but can be induced by an applied electric field in the vicinity of the 1s exciton energy. Surprisingly, the THG signal, which is allowed in this geometry, is considerably reduced by the electric field. We develop a theory which provides good agreement with the experimental data. In particular, it shows that the optical nonlinearities for the 1s exciton resonance are modified in an electric field by the Stark effect, which mixes the 1s and 2p exciton states of opposite parity. This mixing acts in opposite way on the SHG and THG processes, as it leads to the appearance of forbidden SHG in (001)-oriented GaAs and decreases the crystallographic THG.}}, author = {{Brunne, D. and Lafrentz, M. and Pavlov, V. V. and Pisarev, R. V. and Rodina, A. V. and Yakovlev, D. R. and Bayer, M.}}, issn = {{1098-0121}}, journal = {{Physical Review B}}, number = {{8}}, publisher = {{American Physical Society (APS)}}, title = {{{Electric field effect on optical harmonic generation at the exciton resonances in GaAs}}}, doi = {{10.1103/physrevb.92.085202}}, volume = {{92}}, year = {{2015}}, } @article{6524, abstract = {{We use a picosecond acoustics technique to modulate the laser output of electrically pumped GaAs/AlAs micropillar lasers with InGaAs quantum dots. The modulation of the emission wavelength takes place on the frequencies of the nanomechanical extensional and breathing (radial) modes of the micropillars. The amplitude of the modulation for various nanomechanical modes is different for every micropillar which is explained by a various elastic contact between the micropillar walls and polymer environment.}}, author = {{Czerniuk, T. and Tepper, J. and Akimov, A. V. and Unsleber, S. and Schneider, C. and Kamp, M. and Höfling, S. and Yakovlev, D. R. and Bayer, M.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{4}}, publisher = {{AIP Publishing}}, title = {{{Impact of nanomechanical resonances on lasing from electrically pumped quantum dot micropillars}}}, doi = {{10.1063/1.4906611}}, volume = {{106}}, year = {{2015}}, }