@article{7988, author = {{Lei, Wen and Notthoff, Christian and Peng, Jie and Reuter, Dirk and Wieck, Andreas and Bester, Gabriel and Lorke, Axel}}, issn = {{0031-9007}}, journal = {{Physical Review Letters}}, number = {{17}}, publisher = {{American Physical Society (APS)}}, title = {{{“Artificial Atoms” in Magnetic Fields: Wave-Function Shaping and Phase-Sensitive Tunneling}}}, doi = {{10.1103/physrevlett.105.176804}}, volume = {{105}}, year = {{2010}}, } @article{7989, author = {{Kreisbeck, Christoph and Kramer, Tobias and Buchholz, Sven S. and Fischer, Saskia F. and Kunze, Ulrich and Reuter, Dirk and Wieck, Andreas D.}}, issn = {{1098-0121}}, journal = {{Physical Review B}}, number = {{16}}, publisher = {{American Physical Society (APS)}}, title = {{{Phase shifts and phaseπjumps in four-terminal waveguide Aharonov-Bohm interferometers}}}, doi = {{10.1103/physrevb.82.165329}}, volume = {{82}}, year = {{2010}}, } @article{7990, author = {{Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, A. and Meier, C.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{14}}, publisher = {{AIP Publishing}}, title = {{{An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}}}, doi = {{10.1063/1.3488812}}, volume = {{97}}, year = {{2010}}, } @article{7991, author = {{Reuter, Dirk and Roescu, R and Zeitler, U and Maan, J C and Wieck, A D}}, issn = {{1742-6596}}, journal = {{Journal of Physics: Conference Series}}, publisher = {{IOP Publishing}}, title = {{{Capacitance-voltage spectroscopy on InAs quantum dot valence band states in tilted magnetic fields}}}, doi = {{10.1088/1742-6596/245/1/012043}}, volume = {{245}}, year = {{2010}}, } @article{7992, author = {{Rizo, P J and Pugzlys, A and Slachter, A and Denega, S Z and Reuter, Dirk and Wieck, A D and van Loosdrecht, P H M and van der Wal, C H}}, issn = {{1367-2630}}, journal = {{New Journal of Physics}}, number = {{11}}, publisher = {{IOP Publishing}}, title = {{{Optical probing of spin dynamics of two-dimensional and bulk electrons in a GaAs/AlGaAs heterojunction system}}}, doi = {{10.1088/1367-2630/12/11/113040}}, volume = {{12}}, year = {{2010}}, } @inproceedings{809, author = {{Birkenheuer, Georg and Brinkmann, Andre and Karl, Holger}}, booktitle = {{Job Scheduling Strategies for Parallel Processing - 15th International Workshop, JSSPP 2010, Atlanta, GA, USA, April 23, 2010, Revised Selected Papers}}, pages = {{51--76}}, title = {{{Risk Aware Overbooking for Commercial Grids}}}, doi = {{10.1007/978-3-642-16505-4_4}}, year = {{2010}}, } @article{4548, abstract = {{A fluorescence study of acetonitrile solutions of bis(tetramethylguanidine)propane, copper(I)-iodide and [Cu(btmgp)I] was performed and the chemical reaction of the latter species with O2 was investigated at room temperature. The actual quenching process via O2 gassing was studied and an exponential dependence of the fluorescence intensity with respect to the complex concentration was observed. Furthermore the survey was deepened on time resolved fluorescence properties of solved [Cu(btmgp)I] in a wider concentration range. The applicability of this complex for O2 sensing inside a microreactor system was proven by confocal fluorescence measurements. It was shown that the investigated system can be used for oxygen sensing in the copper concentration range from 10−2 to 10−9 mol/l.}}, author = {{Herres-Pawlis, Sonja and Berth, Gerhard and Wiedemeier, Volker and Schmidt, Ludger and Zrenner, Artur and Warnecke, Hans-Joachim}}, issn = {{0022-2313}}, journal = {{Journal of Luminescence}}, keywords = {{Copper Oxygen Fluorescence quenching N donor ligands}}, number = {{10}}, pages = {{1958--1962}}, publisher = {{Elsevier BV}}, title = {{{Oxygen sensing by fluorescence quenching of [Cu(btmgp)I]}}}, doi = {{10.1016/j.jlumin.2010.05.012}}, volume = {{130}}, year = {{2010}}, } @article{4549, abstract = {{Damage caused by laser irradiation on the surface of ZnTe epilayers was studied by micro-Raman and atomic force microscopy (AFM). ZnTe LO-phonon overtones up to four order and TO + (n − 1)LO zone-center phonons were observed in the resonant micro-Raman spectra at room temperature. Discrepancies in the literature regarding the origin of two features observed at low frequencies around 120 and 140 cm−1 in the Raman spectrum of ZnTe are discussed and resolved. These Raman peaks were not detected by using a low excitation laser power density on a Zn-terminated ZnTe surface; however, with the increase of the laser power density they were found to arise irreversibly. The correspondence of these peaks in a wave number with the strongest Raman peaks of the crystalline tellurium phase and the intensity enhancement behavior with the laser power in a similar way as for CdTe strongly suggests the formation of crystalline tellurium aggregates on the layer surface due to laser irradiation damage. AFM data reveal the occurrence of laser ablation on the ZnTe surface even though the surface temperature of the sample is below the melting point.}}, author = {{Larramendi, E M and Berth, Gerhard and Wiedemeier, V and Hüsch, K-P and Zrenner, Artur and Woggon, U and Tschumak, E and Lischka, K and Schikora, D}}, issn = {{0268-1242}}, journal = {{Semiconductor Science and Technology}}, number = {{7}}, publisher = {{IOP Publishing}}, title = {{{Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers}}}, doi = {{10.1088/0268-1242/25/7/075003}}, volume = {{25}}, year = {{2010}}, } @article{4550, abstract = {{We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski–Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices.}}, author = {{Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, Artur and Meier, Cedrik}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{14}}, publisher = {{AIP Publishing}}, title = {{{An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}}}, doi = {{10.1063/1.3488812}}, volume = {{97}}, year = {{2010}}, } @article{4551, abstract = {{An intentional positioning of optically active quantum dots using site-selective growth by a combination of molecular beam epitaxy (MBE) and focused ion beam (FIB) implantation in an all-ultra-high-vacuum (UHV) setup has been successfully demonstrated. A square array of periodic holes on GaAs substrate was fabricated with FIB of 30 keV ions followed by an in situ annealing step. Subsequently, the patterned holes were overgrown with an optimized amount of InAs in order to achieve site-selective growth of the QDs on the patterned holes. Under well-optimized conditions, a selectivity of single quantum dot growth in the patterned holes of 52% was achieved. Thereafter, carrier injection and subsequent radiative recombination from the positioned InAs/GaAs self-assembled QDs was investigated by embedding the QDs in the intrinsic part of a GaAs-based p–i–n junction device. Electroluminescence spectra taken at 77 K show interband transitions up to the fifth excited state from the QDs.}}, author = {{Mehta, Minisha and Reuter, Dirk and Melnikov, Alexander and Wieck, Andreas D. and Michaelis de Vasconcellos, Steffen and Baumgarten, Tim and Zrenner, Artur and Meier, Cedrik}}, issn = {{1386-9477}}, journal = {{Physica E: Low-dimensional Systems and Nanostructures}}, keywords = {{Molecular beam epitaxy, Focused ion beam, Self-assembled quantum dot, Electroluminescence}}, number = {{10}}, pages = {{2749--2752}}, publisher = {{Elsevier BV}}, title = {{{Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode}}}, doi = {{10.1016/j.physe.2009.12.053}}, volume = {{42}}, year = {{2010}}, } @article{4552, abstract = {{Here we report on investigations on CdSe quantum dots incorporated in ZnSe based Schottky photodiodes with near-field shadow masks. Photoluminescence and photocurrent of individual quantum dots were studied as a function of the applied bias voltage. The exciton energy of the quantum dot ground state transition was shifted to the excitation energy by using the Stark effect tuning via an external bias voltage. Under the condition of resonance with the laser excitation energy we observed a resonant photocurrent signal due to the tunnelling of carriers out of the quantum dots at electric fields above 500 kV/cm.}}, author = {{Panfilova, M. and Michaelis de Vasconcellos, S. and Pawlis, A. and Lischka, K. and Zrenner, Artur}}, issn = {{1386-9477}}, journal = {{Physica E: Low-dimensional Systems and Nanostructures}}, keywords = {{CdSe/ZnSe quantum dots, Photodiode, Quantum confined Stark Effect, Photocurrent, II–VI Semiconductors}}, number = {{10}}, pages = {{2521--2523}}, publisher = {{Elsevier BV}}, title = {{{Resonant photocurrent-spectroscopy of individual CdSe quantum dots}}}, doi = {{10.1016/j.physe.2010.01.013}}, volume = {{42}}, year = {{2010}}, } @inproceedings{7251, author = {{Ishikawa, Atsushi and Oulton, Rupert F. and Zentgraf, Thomas and Zhang, Xiang}}, booktitle = {{Plasmonics: Metallic Nanostructures and Their Optical Properties VIII}}, editor = {{Stockman, Mark I.}}, publisher = {{SPIE}}, title = {{{Extremely low-loss slow-light modes in plasmonic dielectric hybrid systems}}}, doi = {{10.1117/12.860190}}, year = {{2010}}, } @inproceedings{7252, author = {{Sorger, Volker J. and Oulton, Rupert F. and Zentgraf, Thomas and Ma, Renmin and Gladden, Christopher and Dai, Lun and Bartal, Guy and Zhang, Xiang}}, booktitle = {{Plasmonics: Metallic Nanostructures and Their Optical Properties VIII}}, editor = {{Stockman, Mark I.}}, publisher = {{SPIE}}, title = {{{Semiconductor plasmon laser}}}, doi = {{10.1117/12.859136}}, year = {{2010}}, } @article{7494, author = {{Mehta, M. and Meier, Cedrik}}, issn = {{0013-4651}}, journal = {{Journal of The Electrochemical Society}}, number = {{2}}, publisher = {{The Electrochemical Society}}, title = {{{Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals}}}, doi = {{10.1149/1.3519999}}, volume = {{158}}, year = {{2010}}, } @article{7496, author = {{Theis, Jens and Geller, Martin and Lorke, Axel and Wiggers, Hartmut and Wieck, Andreas and Meier, Cedrik}}, issn = {{0957-4484}}, journal = {{Nanotechnology}}, number = {{45}}, publisher = {{IOP Publishing}}, title = {{{Electroluminescence from silicon nanoparticles fabricated from the gas phase}}}, doi = {{10.1088/0957-4484/21/45/455201}}, volume = {{21}}, year = {{2010}}, } @article{4153, abstract = {{Nanosphere lithography (NSL) masks consisting of mono- or double-layers of polystyrene (PS) nano-beads are fabricated on silicon exploiting the self-organization of PS particles during the controlled drying of a colloidal suspension on a surface. The shape changes and shrinkage of PS sphere masks upon treatment in an air plasma are studied as a function of initial sphere size, plasma power and treatment time. The influence of several experimental parameters, including the plasma induced temperature rise, are analysed using scanning and transmission electron microscopy. It is demonstrated that a variety of new intriguing nanopatterns can be generated on silicon surfaces by the combination of NSL and plasma techniques, largely broadening the variety of patterns available so far by NSL.}}, author = {{Gogel, D. and Weinl, M. and Lindner, Jörg and Stritzker, B.}}, journal = {{JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS}}, number = {{3}}, pages = {{740--744}}, title = {{{Plasma modification of nanosphere lithography masks made of polystyrene beads}}}, volume = {{12}}, year = {{2010}}, } @article{6619, abstract = {{Strömungsbasierte Mischprozesse sind grundlegender Bestandteil vieler chemischer Prozesse. Realisierbare Mischzeiten reichen von einigen Millisekunden bis zu Sekunden, wobei die vollständige Homogenisierung oft nicht sichergestellt ist. Werden kinetische Parameter chemischer Reaktionen dieses Zeitskalenbereichs ohne Berücksichtigung der Mischprozesse bestimmt, sind sie mischungsmaskiert und geben die inhärente chemische Kinetik nicht wieder. In dieser Arbeit wird die Validierung und Anwendung einer Methode zur Bestimmung inhärenter chemischer Kinetiken von in Flüssigphase ablaufenden chemischen Reaktionen im stationären, laminaren Flachbettmikroreaktor vorgestellt. Der verfolgte Ansatz basiert auf der mechanistischen Modellierung der Molmengen unter Berücksichtigung von Konvektion, Diffusion und Reaktion und der Bestimmung der unbekannten Parameter durch Anpassung des Modells an experimentell ermittelte Konzentrationsverläufe.}}, author = {{Warnecke, H.-J. and Bothe, D. and Zrenner, Artur and Berth, Gerhard and Hüsch, K.-P.}}, issn = {{0009-286X}}, journal = {{Chemie Ingenieur Technik}}, number = {{3}}, pages = {{251--258}}, publisher = {{Wiley}}, title = {{{Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*}}}, doi = {{10.1002/cite.200900169}}, volume = {{82}}, year = {{2010}}, } @inbook{12943, author = {{Röwenstrunk, Daniel}}, booktitle = {{Digitale Edition zwischen Experiment und Standardisierung}}, editor = {{Stadler, Peter and Veit, Joachim}}, isbn = {{9783110231144}}, title = {{{Die digitale Edition von Webers Klarinettenquintett – Ein Vergleich der Edirom-Versionen 2004 und 2008}}}, doi = {{10.1515/9783110231144.61}}, year = {{2010}}, } @inproceedings{22050, abstract = {{Generative production techniques have the advantage of manufacturing parts via an additive process without needing a forming tool. One of these additive manufacturing technologies is “Fused Deposition Modeling” (FDM). From a 3D-CAD data set, components and assemblies are manufactured out of thermoplastic material in only a few working steps. Native software automatically slices the data, calculates the support structures, and creates toolpaths. The parts then are built up layer by layer by means of an additive process. An extrusion head deposits the molten thermoplastic filament to create each layer. This technology began as a process for creating prototype parts; recently it has found new utility in the production of manufacturing tools and as a manufacturing process for end-use parts. In order to be used as a part for serial production, the components must possess the required mechanical properties. To this end, not only is the chosen material relevant, but a correct process control is also necessary. An interesting material for the aircraft and automotive industry is the material PEI with the trade name Ultem*9085. This material should typically be used on FDM-machines for the manufacturing of end products. The aim of the research is to determine the present mechanical data based on the process control, as well as reproducibility from job to job. In this work the influence of the orientation and the structure of the manufactured parts based on the mechanical data are analyzed. Sample parts are generated with the given parameters of the native software based upon the CAD data. First, specimens were analyzed concerning their geometry and configuration. The dimensions and weight were measured. The mechanical tests conducted were the tensile and compression tests.}}, author = {{Bagsik, A. and Schöppner, Volker and Klemp, E.}}, booktitle = {{Proceedings of International Conference Polymeric Materials}}, isbn = {{978-3-868-29282-4}}, title = {{{FDM Part Quality Manufactured with ULTEM 9085}}}, doi = {{https://docplayer.net/255735-Fdm-part-quality-manufactured-with-ultem-9085.html}}, year = {{2010}}, } @phdthesis{19605, author = {{Lürwer-Brüggemeier, Katharina}}, publisher = {{Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn}}, title = {{{Mächtigkeit und Komplexität von Berechnungen mit der ganzzahligen Division}}}, volume = {{261}}, year = {{2009}}, }