@inproceedings{18141,
  abstract     = {{Dieser Artikel beschreibt eine Methode zur Animation einer großen Anzahl von Objekten zur dynamischen 3D-Visualisierung eines Simulationsmodells mittels der Materialflusssimulation auf Basis von Schlüsselbildern. Die Anzahl zu animierender Objekte ist in komplexen Modellen zu groß, um alle Animationen flüssig darzustellen. Dynamisch abgestuft wählt das entwickelte Verfahren gezielt wichtige Animationen aus, weniger relevante Animationen werden entsprechend seltener animiert. Die Selektion der Animationen erfolgt nach der projizierten Größe der Objekte auf das Ausgabegerät, um einen guten optischen Eindruck beizubehalten. Angepasst an die Leistungsfähigkeit des Rechners wird das Verfahren so geregelt, dass die Visualisierung einer hohen Anzahl von Objekten in Echtzeit möglich bleibt. Das Verfahren ist in einem Editor prototypisch implementiert, mit dem Schlüsselbilder für Objekte erzeugt werden können. Das Gruppieren von Objekten wird erlaubt, so dass eine Hierarchie von Bewegungspfaden definierbar ist. Die Evaluierung der Methode wird mittels Testszenen durchgeführt, die aus mehreren zehntausend animierten Objekten bestehen.}},
  author       = {{Laroque, Christoph and Fischer, Matthias and Eikel, Benjamin}},
  booktitle    = {{Augmented & Virtual Reality in der Produktentstehung}},
  pages        = {{193----206}},
  publisher    = {{Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn}},
  title        = {{{Regelung von Animationen in Simulationen von  hochdynamischen Fabrikszenen }}},
  volume       = {{232}},
  year         = {{2008}},
}

@article{4554,
  abstract     = {{We have investigated the properties of neutral and charged excitons in single CdSe/ZnSe QD photodiodes by μ-photoluminescence spectroscopy. By applying a bias voltage, we have been able to control the number of electrons in a single QD by shifting the energy levels of the QD with respect to the Fermi level in the back contact. Also the quantum-confined Stark effect was observed as a function of the applied electric field.}},
  author       = {{de Vasconcellos, S. Michaelis and Pawlis, A. and Arens, C. and Panfilova, M. and Zrenner, Artur and Schikora, D. and Lischka, K.}},
  issn         = {{0026-2692}},
  journal      = {{Microelectronics Journal}},
  keywords     = {{CdSe quantum dots, Photodiode, Stark effect}},
  number       = {{2}},
  pages        = {{215--217}},
  publisher    = {{Elsevier BV}},
  title        = {{{Exciton spectroscopy on single CdSe/ZnSe quantum dot photodiodes}}},
  doi          = {{10.1016/j.mejo.2008.07.055}},
  volume       = {{40}},
  year         = {{2008}},
}

@article{4555,
  abstract     = {{Semiconductor microdiscs are promising for applications in photonics and quantum-information processing, such as efficient solid-state-based single-photon emitters. Strain in the multilayer structure of those devices has an important influence on their optical properties. We present measurements of the strain distribution in ZnMgSe/ZnSe microdiscs by means of micro-photoluminescence and micro-Raman imaging. Photoluminescence measurements of microdiscs reveal substantially broadened emission lines with a shift to lower energy at the undercut part of microdiscs, indicating local relaxation in this area. The distribution of the strain in the microdiscs is obtained from an imaging micro-Raman analysis, revealing that the freestanding part of the microdiscs is free of defects.}},
  author       = {{Panfilova, M. and Pawlis, A. and Arens, C. and de Vasconcellos, S. Michaelis and Berth, Gerhard and Hüsch, K.P. and Wiedemeier, V. and Zrenner, Artur and Lischka, K.}},
  issn         = {{0026-2692}},
  journal      = {{Microelectronics Journal}},
  keywords     = {{Raman, Photoluminescence, Microdisc, ZnSe}},
  number       = {{2}},
  pages        = {{221--223}},
  publisher    = {{Elsevier BV}},
  title        = {{{Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs}}},
  doi          = {{10.1016/j.mejo.2008.07.056}},
  volume       = {{40}},
  year         = {{2008}},
}

@article{4557,
  abstract     = {{The optical properties of semiconductor quantum dots are in many respects similar to those of atoms. Since quantum dots can be defined by state-of-the-art semiconductor technologies, they exhibit long-term stability and allow for well-controlled and efficient interactions with both optical and electrical fields. Resonant ps excitation of single quantum dot photodiodes leads to new classes of coherent optoelectronic functions and devices, which exhibit precise state preparation, phase-sensitive optical manipulations and the control of quantum states by electrical fields.}},
  author       = {{Zrenner, Artur and Ester, P and Michaelis de Vasconcellos, S and Hübner, M C and Lackmann, L and Stufler, S and Bichler, M}},
  issn         = {{0953-8984}},
  journal      = {{Journal of Physics: Condensed Matter}},
  number       = {{45}},
  publisher    = {{IOP Publishing}},
  title        = {{{Coherent optoelectronics with single quantum dots}}},
  doi          = {{10.1088/0953-8984/20/45/454210}},
  volume       = {{20}},
  year         = {{2008}},
}

@inbook{7500,
  author       = {{Meier, Cedrik and Lüttjohann, Stephan and Offer, Matthias and Wiggers, Hartmut and Lorke, Axel}},
  booktitle    = {{Advances in Solid State Physics}},
  isbn         = {{9783540858584}},
  issn         = {{1438-4329}},
  pages        = {{79--90}},
  publisher    = {{Springer Berlin Heidelberg}},
  title        = {{{Silicon Nanoparticles: Excitonic Fine Structure and Oscillator Strength}}},
  doi          = {{10.1007/978-3-540-85859-1_7}},
  year         = {{2008}},
}

@article{8593,
  author       = {{Diaconescu, D. and Goldschmidt, A. and Reuter, Dirk and Wieck, A. D.}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  pages        = {{276--283}},
  title        = {{{Quantum Hall effect in long and in mobility adjusted GaAs/AlxGa1-xAs samples}}},
  doi          = {{10.1002/pssb.200743345}},
  year         = {{2008}},
}

@article{8603,
  author       = {{Lo, F.-Y. and Melnikov, A. and Reuter, Dirk and Cordier, Y. and Wieck, A. D.}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  title        = {{{Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures}}},
  doi          = {{10.1063/1.2899968}},
  year         = {{2008}},
}

@article{8606,
  author       = {{Grbić, B. and Leturcq, R. and Ihn, T. and Ensslin, K. and Blatter, G. and Reuter, Dirk and Wieck, A. D.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  title        = {{{Hysteretic magnetotransport inp-typeAlxGa1−xAsheterostructures with In/Zn/Au Ohmic contacts}}},
  doi          = {{10.1103/physrevb.77.245307}},
  year         = {{2008}},
}

@article{8607,
  author       = {{Hohage, P. E. and Nannen, J. and Halm, S. and Bacher, G. and Wahle, M. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  title        = {{{Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature}}},
  doi          = {{10.1063/1.2943279}},
  year         = {{2008}},
}

@article{8608,
  author       = {{Hövel, S. and Gerhardt, N. C. and Hofmann, M. R. and Lo, F.-Y. and Reuter, Dirk and Wieck, A. D. and Schuster, E. and Keune, W. and Wende, H. and Petracic, O. and Westerholt, K.}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  title        = {{{Electrical detection of photoinduced spins both at room temperature and in remanence}}},
  doi          = {{10.1063/1.2948856}},
  year         = {{2008}},
}

@article{8609,
  author       = {{Hövel, S. and Gerhardt, N. C. and Hofmann, M. R. and Lo, F.-Y. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Schuster, E. and Wende, H. and Keune, W. and Petracic, O. and Westerholt, K.}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  title        = {{{Room temperature electrical spin injection in remanence}}},
  doi          = {{10.1063/1.2957469}},
  year         = {{2008}},
}

@article{8610,
  author       = {{Koop, E. J. and van Wees, B. J. and Reuter, Dirk and Wieck, A. D. and van der Wal, C. H.}},
  issn         = {{0031-9007}},
  journal      = {{Physical Review Letters}},
  title        = {{{Spin Accumulation and Spin Relaxation in a Large Open Quantum Dot}}},
  doi          = {{10.1103/physrevlett.101.056602}},
  year         = {{2008}},
}

@article{8611,
  author       = {{Hugger, S. and Xu, Hengyi and Tarasov, A. and Cerchez, M. and Heinzel, T. and Zozoulenko, I. V. and Reuter, Dirk and Wieck, A. D.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  title        = {{{Magnetic-barrier-induced conductance fluctuations in quantum wires}}},
  doi          = {{10.1103/physrevb.78.165307}},
  year         = {{2008}},
}

@article{8612,
  author       = {{Rizo, P. J. and Pugžlys, A. and Liu, J. and Reuter, Dirk and Wieck, A. D. and van der Wal, C. H. and van Loosdrecht, P. H. M.}},
  issn         = {{0034-6748}},
  journal      = {{Review of Scientific Instruments}},
  title        = {{{Compact cryogenic Kerr microscope for time-resolved studies of electron spin transport in microstructures}}},
  doi          = {{10.1063/1.3046283}},
  year         = {{2008}},
}

@article{8613,
  author       = {{Komijani, Y. and Csontos, M. and Ihn, T. and Ensslin, K. and Reuter, Dirk and Wieck, A. D.}},
  issn         = {{0295-5075}},
  journal      = {{EPL (Europhysics Letters)}},
  title        = {{{Observation of excited states in a p-type GaAs quantum dot}}},
  doi          = {{10.1209/0295-5075/84/57004}},
  year         = {{2008}},
}

@article{8616,
  author       = {{Kaiser, F J and Kohler, S and Hänggi, P and Malecha, M and Ebbecke, J and Wixforth, A and Schumacher, H W and Kästner, B and Reuter, Dirk and Wieck, A D}},
  issn         = {{0953-8984}},
  journal      = {{Journal of Physics: Condensed Matter}},
  title        = {{{Theoretical and experimental investigations of Coulomb blockade in coupled quantum dot systems}}},
  doi          = {{10.1088/0953-8984/20/37/374108}},
  year         = {{2008}},
}

@article{8617,
  author       = {{Hernandez, F. G. G. and Greilich, A. and Brito, F. and Wiemann, M. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Bayer, M.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  title        = {{{Temperature-induced spin-coherence dissipation in quantum dots}}},
  doi          = {{10.1103/physrevb.78.041303}},
  year         = {{2008}},
}

@article{8618,
  author       = {{Scheibner, R and König, M and Reuter, Dirk and Wieck, A D and Gould, C and Buhmann, H and Molenkamp, L W}},
  issn         = {{1367-2630}},
  journal      = {{New Journal of Physics}},
  title        = {{{Quantum dot as thermal rectifier}}},
  doi          = {{10.1088/1367-2630/10/8/083016}},
  year         = {{2008}},
}

@inproceedings{15954,
  author       = {{Tröster, Thomas and Howe, C. and Müller, M. and Rostek, W.}},
  location     = {{Wiesbaden}},
  title        = {{{Development status and market potential of hot formed ballistic steels}}},
  year         = {{2008}},
}

@article{15955,
  abstract     = {{<jats:p>The present paper reports on the effect of texture on the cyclic stress-strain response
(CSSR) and the fatigue life of ultrafine-grained (UFG) interstitial-free (IF) steel. Tests in the lowcycle
fatigue (LCF) regime were conducted on material that was processed by the equal channel
angular extrusion (ECAE) technique along the so called “efficient” route 8E. This route has been
shown to result in a homogeneous microstructure with a high fraction of high angle grain
boundaries (HAGBs), which are beneficial for a stable CSSR. In addition, the evolution of the
microstructure was characterized by means of electron optical techniques, including electron
backscattered diffraction, and by X-Ray diffractometry. It was found that the initial texture of
specimens cut from the ECAE billet along different orientations with respect to the extrusion
direction (ED) has a substantial effect on the CSSR of the UFG IF steel. Furthermore, microscopy
results indicated the notable influence of the last ECAE processing step on the evolution of damage
in the material.</jats:p>}},
  author       = {{Niendorf, Thomas and Marten, Thorsten and Maier, Hans J. and Karaman, Ibrahim}},
  issn         = {{1662-9752}},
  journal      = {{Materials Science Forum}},
  pages        = {{864--869}},
  title        = {{{The Effect of Texture on the Fatigue Properties of Ultrafine-Grained Interstitial-Free Steel}}},
  doi          = {{10.4028/www.scientific.net/msf.584-586.864}},
  volume       = {{584-586}},
  year         = {{2008}},
}

