[{"date_created":"2019-02-21T14:42:01Z","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","citation":{"apa":"Reuter, D., Roescu, R., Zeitler, U., Maan, J. C., &#38; Wieck, A. D. (2010). Capacitance-voltage spectroscopy on InAs quantum dot valence band states in tilted magnetic fields. <i>Journal of Physics: Conference Series</i>, <i>245</i>. <a href=\"https://doi.org/10.1088/1742-6596/245/1/012043\">https://doi.org/10.1088/1742-6596/245/1/012043</a>","ieee":"D. Reuter, R. Roescu, U. Zeitler, J. C. Maan, and A. D. Wieck, “Capacitance-voltage spectroscopy on InAs quantum dot valence band states in tilted magnetic fields,” <i>Journal of Physics: Conference Series</i>, vol. 245, 2010.","short":"D. Reuter, R. Roescu, U. Zeitler, J.C. Maan, A.D. Wieck, Journal of Physics: Conference Series 245 (2010).","chicago":"Reuter, Dirk, R Roescu, U Zeitler, J C Maan, and A D Wieck. “Capacitance-Voltage Spectroscopy on InAs Quantum Dot Valence Band States in Tilted Magnetic Fields.” <i>Journal of Physics: Conference Series</i> 245 (2010). <a href=\"https://doi.org/10.1088/1742-6596/245/1/012043\">https://doi.org/10.1088/1742-6596/245/1/012043</a>.","mla":"Reuter, Dirk, et al. “Capacitance-Voltage Spectroscopy on InAs Quantum Dot Valence Band States in Tilted Magnetic Fields.” <i>Journal of Physics: Conference Series</i>, vol. 245, 012043, IOP Publishing, 2010, doi:<a href=\"https://doi.org/10.1088/1742-6596/245/1/012043\">10.1088/1742-6596/245/1/012043</a>.","ama":"Reuter D, Roescu R, Zeitler U, Maan JC, Wieck AD. Capacitance-voltage spectroscopy on InAs quantum dot valence band states in tilted magnetic fields. <i>Journal of Physics: Conference Series</i>. 2010;245. doi:<a href=\"https://doi.org/10.1088/1742-6596/245/1/012043\">10.1088/1742-6596/245/1/012043</a>","bibtex":"@article{Reuter_Roescu_Zeitler_Maan_Wieck_2010, title={Capacitance-voltage spectroscopy on InAs quantum dot valence band states in tilted magnetic fields}, volume={245}, DOI={<a href=\"https://doi.org/10.1088/1742-6596/245/1/012043\">10.1088/1742-6596/245/1/012043</a>}, number={012043}, journal={Journal of Physics: Conference Series}, publisher={IOP Publishing}, author={Reuter, Dirk and Roescu, R and Zeitler, U and Maan, J C and Wieck, A D}, year={2010} }"},"publication":"Journal of Physics: Conference Series","language":[{"iso":"eng"}],"_id":"7991","publisher":"IOP Publishing","article_number":"012043","volume":245,"doi":"10.1088/1742-6596/245/1/012043","user_id":"42514","publication_identifier":{"issn":["1742-6596"]},"author":[{"id":"37763","last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk"},{"first_name":"R","last_name":"Roescu","full_name":"Roescu, R"},{"last_name":"Zeitler","first_name":"U","full_name":"Zeitler, U"},{"last_name":"Maan","first_name":"J C","full_name":"Maan, J C"},{"last_name":"Wieck","first_name":"A D","full_name":"Wieck, A D"}],"status":"public","year":"2010","title":"Capacitance-voltage spectroscopy on InAs quantum dot valence band states in tilted magnetic fields","intvolume":"       245","date_updated":"2022-01-06T07:03:48Z","publication_status":"published"},{"citation":{"mla":"Rizo, P. J., et al. “Optical Probing of Spin Dynamics of Two-Dimensional and Bulk Electrons in a GaAs/AlGaAs Heterojunction System.” <i>New Journal of Physics</i>, vol. 12, no. 11, 113040, IOP Publishing, 2010, doi:<a href=\"https://doi.org/10.1088/1367-2630/12/11/113040\">10.1088/1367-2630/12/11/113040</a>.","ama":"Rizo PJ, Pugzlys A, Slachter A, et al. Optical probing of spin dynamics of two-dimensional and bulk electrons in a GaAs/AlGaAs heterojunction system. <i>New Journal of Physics</i>. 2010;12(11). doi:<a href=\"https://doi.org/10.1088/1367-2630/12/11/113040\">10.1088/1367-2630/12/11/113040</a>","bibtex":"@article{Rizo_Pugzlys_Slachter_Denega_Reuter_Wieck_van Loosdrecht_van der Wal_2010, title={Optical probing of spin dynamics of two-dimensional and bulk electrons in a GaAs/AlGaAs heterojunction system}, volume={12}, DOI={<a href=\"https://doi.org/10.1088/1367-2630/12/11/113040\">10.1088/1367-2630/12/11/113040</a>}, number={11113040}, journal={New Journal of Physics}, publisher={IOP Publishing}, author={Rizo, P J and Pugzlys, A and Slachter, A and Denega, S Z and Reuter, Dirk and Wieck, A D and van Loosdrecht, P H M and van der Wal, C H}, year={2010} }","apa":"Rizo, P. J., Pugzlys, A., Slachter, A., Denega, S. Z., Reuter, D., Wieck, A. D., … van der Wal, C. H. (2010). Optical probing of spin dynamics of two-dimensional and bulk electrons in a GaAs/AlGaAs heterojunction system. <i>New Journal of Physics</i>, <i>12</i>(11). <a href=\"https://doi.org/10.1088/1367-2630/12/11/113040\">https://doi.org/10.1088/1367-2630/12/11/113040</a>","ieee":"P. J. Rizo <i>et al.</i>, “Optical probing of spin dynamics of two-dimensional and bulk electrons in a GaAs/AlGaAs heterojunction system,” <i>New Journal of Physics</i>, vol. 12, no. 11, 2010.","short":"P.J. Rizo, A. Pugzlys, A. Slachter, S.Z. Denega, D. Reuter, A.D. Wieck, P.H.M. van Loosdrecht, C.H. van der Wal, New Journal of Physics 12 (2010).","chicago":"Rizo, P J, A Pugzlys, A Slachter, S Z Denega, Dirk Reuter, A D Wieck, P H M van Loosdrecht, and C H van der Wal. “Optical Probing of Spin Dynamics of Two-Dimensional and Bulk Electrons in a GaAs/AlGaAs Heterojunction System.” <i>New Journal of Physics</i> 12, no. 11 (2010). <a href=\"https://doi.org/10.1088/1367-2630/12/11/113040\">https://doi.org/10.1088/1367-2630/12/11/113040</a>."},"user_id":"42514","volume":12,"publisher":"IOP Publishing","_id":"7992","status":"public","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-02-21T14:42:45Z","issue":"11","publication":"New Journal of Physics","doi":"10.1088/1367-2630/12/11/113040","article_number":"113040","language":[{"iso":"eng"}],"publication_status":"published","date_updated":"2022-01-06T07:03:48Z","intvolume":"        12","title":"Optical probing of spin dynamics of two-dimensional and bulk electrons in a GaAs/AlGaAs heterojunction system","year":"2010","publication_identifier":{"issn":["1367-2630"]},"author":[{"full_name":"Rizo, P J","first_name":"P J","last_name":"Rizo"},{"full_name":"Pugzlys, A","last_name":"Pugzlys","first_name":"A"},{"first_name":"A","last_name":"Slachter","full_name":"Slachter, A"},{"first_name":"S Z","last_name":"Denega","full_name":"Denega, S Z"},{"last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763"},{"full_name":"Wieck, A D","last_name":"Wieck","first_name":"A D"},{"last_name":"van Loosdrecht","first_name":"P H M","full_name":"van Loosdrecht, P H M"},{"last_name":"van der Wal","first_name":"C H","full_name":"van der Wal, C H"}]},{"date_updated":"2022-01-06T07:03:50Z","title":"Risk Aware Overbooking for Commercial Grids","year":"2010","status":"public","author":[{"last_name":"Birkenheuer","first_name":"Georg","full_name":"Birkenheuer, Georg"},{"full_name":"Brinkmann, Andre","last_name":"Brinkmann","first_name":"Andre"},{"id":"126","full_name":"Karl, Holger","first_name":"Holger","last_name":"Karl"}],"user_id":"24135","doi":"10.1007/978-3-642-16505-4_4","page":"51-76","_id":"809","publication":"Job Scheduling Strategies for Parallel Processing - 15th International Workshop, JSSPP 2010, Atlanta, GA, USA, April 23, 2010, Revised Selected Papers","citation":{"ieee":"G. Birkenheuer, A. Brinkmann, and H. Karl, “Risk Aware Overbooking for Commercial Grids,” in <i>Job Scheduling Strategies for Parallel Processing - 15th International Workshop, JSSPP 2010, Atlanta, GA, USA, April 23, 2010, Revised Selected Papers</i>, 2010, pp. 51–76.","mla":"Birkenheuer, Georg, et al. “Risk Aware Overbooking for Commercial Grids.” <i>Job Scheduling Strategies for Parallel Processing - 15th International Workshop, JSSPP 2010, Atlanta, GA, USA, April 23, 2010, Revised Selected Papers</i>, 2010, pp. 51–76, doi:<a href=\"https://doi.org/10.1007/978-3-642-16505-4_4\">10.1007/978-3-642-16505-4_4</a>.","apa":"Birkenheuer, G., Brinkmann, A., &#38; Karl, H. (2010). Risk Aware Overbooking for Commercial Grids. In <i>Job Scheduling Strategies for Parallel Processing - 15th International Workshop, JSSPP 2010, Atlanta, GA, USA, April 23, 2010, Revised Selected Papers</i> (pp. 51–76). <a href=\"https://doi.org/10.1007/978-3-642-16505-4_4\">https://doi.org/10.1007/978-3-642-16505-4_4</a>","bibtex":"@inproceedings{Birkenheuer_Brinkmann_Karl_2010, title={Risk Aware Overbooking for Commercial Grids}, DOI={<a href=\"https://doi.org/10.1007/978-3-642-16505-4_4\">10.1007/978-3-642-16505-4_4</a>}, booktitle={Job Scheduling Strategies for Parallel Processing - 15th International Workshop, JSSPP 2010, Atlanta, GA, USA, April 23, 2010, Revised Selected Papers}, author={Birkenheuer, Georg and Brinkmann, Andre and Karl, Holger}, year={2010}, pages={51–76} }","ama":"Birkenheuer G, Brinkmann A, Karl H. Risk Aware Overbooking for Commercial Grids. In: <i>Job Scheduling Strategies for Parallel Processing - 15th International Workshop, JSSPP 2010, Atlanta, GA, USA, April 23, 2010, Revised Selected Papers</i>. ; 2010:51-76. doi:<a href=\"https://doi.org/10.1007/978-3-642-16505-4_4\">10.1007/978-3-642-16505-4_4</a>","short":"G. Birkenheuer, A. Brinkmann, H. Karl, in: Job Scheduling Strategies for Parallel Processing - 15th International Workshop, JSSPP 2010, Atlanta, GA, USA, April 23, 2010, Revised Selected Papers, 2010, pp. 51–76.","chicago":"Birkenheuer, Georg, Andre Brinkmann, and Holger Karl. “Risk Aware Overbooking for Commercial Grids.” In <i>Job Scheduling Strategies for Parallel Processing - 15th International Workshop, JSSPP 2010, Atlanta, GA, USA, April 23, 2010, Revised Selected Papers</i>, 51–76, 2010. <a href=\"https://doi.org/10.1007/978-3-642-16505-4_4\">https://doi.org/10.1007/978-3-642-16505-4_4</a>."},"type":"conference","department":[{"_id":"75"},{"_id":"27"}],"date_created":"2017-11-27T10:22:26Z"},{"department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"type":"journal_article","keyword":["Copper Oxygen Fluorescence quenching N donor ligands"],"date_created":"2018-09-20T12:31:16Z","abstract":[{"lang":"eng","text":"A fluorescence study of acetonitrile solutions of bis(tetramethylguanidine)propane, copper(I)-iodide and [Cu(btmgp)I] was performed and the chemical reaction of the latter species with O2 was investigated at room temperature. The actual quenching process via O2 gassing was studied and an exponential dependence of the fluorescence intensity with respect to the complex concentration was observed.\r\nFurthermore the survey was deepened on time resolved fluorescence properties of solved [Cu(btmgp)I] in a wider concentration range. The applicability of this complex for O2 sensing inside a microreactor system was proven by confocal fluorescence measurements. It was shown that the investigated system can be used for oxygen sensing in the copper concentration range from 10−2 to 10−9 mol/l."}],"publication":"Journal of Luminescence","issue":"10","doi":"10.1016/j.jlumin.2010.05.012","language":[{"iso":"eng"}],"article_type":"original","intvolume":"       130","publication_status":"published","date_updated":"2022-01-06T07:01:09Z","publication_identifier":{"issn":["0022-2313"]},"author":[{"last_name":"Herres-Pawlis","first_name":"Sonja","full_name":"Herres-Pawlis, Sonja"},{"id":"53","full_name":"Berth, Gerhard","first_name":"Gerhard","last_name":"Berth"},{"full_name":"Wiedemeier, Volker","last_name":"Wiedemeier","first_name":"Volker"},{"full_name":"Schmidt, Ludger","last_name":"Schmidt","first_name":"Ludger"},{"id":"606","full_name":"Zrenner, Artur","last_name":"Zrenner","orcid":"0000-0002-5190-0944","first_name":"Artur"},{"first_name":"Hans-Joachim","last_name":"Warnecke","full_name":"Warnecke, Hans-Joachim"}],"year":"2010","title":"Oxygen sensing by fluorescence quenching of [Cu(btmgp)I]","citation":{"ieee":"S. Herres-Pawlis, G. Berth, V. Wiedemeier, L. Schmidt, A. Zrenner, and H.-J. Warnecke, “Oxygen sensing by fluorescence quenching of [Cu(btmgp)I],” <i>Journal of Luminescence</i>, vol. 130, no. 10, pp. 1958–1962, 2010.","apa":"Herres-Pawlis, S., Berth, G., Wiedemeier, V., Schmidt, L., Zrenner, A., &#38; Warnecke, H.-J. (2010). Oxygen sensing by fluorescence quenching of [Cu(btmgp)I]. <i>Journal of Luminescence</i>, <i>130</i>(10), 1958–1962. <a href=\"https://doi.org/10.1016/j.jlumin.2010.05.012\">https://doi.org/10.1016/j.jlumin.2010.05.012</a>","mla":"Herres-Pawlis, Sonja, et al. “Oxygen Sensing by Fluorescence Quenching of [Cu(Btmgp)I].” <i>Journal of Luminescence</i>, vol. 130, no. 10, Elsevier BV, 2010, pp. 1958–62, doi:<a href=\"https://doi.org/10.1016/j.jlumin.2010.05.012\">10.1016/j.jlumin.2010.05.012</a>.","bibtex":"@article{Herres-Pawlis_Berth_Wiedemeier_Schmidt_Zrenner_Warnecke_2010, title={Oxygen sensing by fluorescence quenching of [Cu(btmgp)I]}, volume={130}, DOI={<a href=\"https://doi.org/10.1016/j.jlumin.2010.05.012\">10.1016/j.jlumin.2010.05.012</a>}, number={10}, journal={Journal of Luminescence}, publisher={Elsevier BV}, author={Herres-Pawlis, Sonja and Berth, Gerhard and Wiedemeier, Volker and Schmidt, Ludger and Zrenner, Artur and Warnecke, Hans-Joachim}, year={2010}, pages={1958–1962} }","ama":"Herres-Pawlis S, Berth G, Wiedemeier V, Schmidt L, Zrenner A, Warnecke H-J. Oxygen sensing by fluorescence quenching of [Cu(btmgp)I]. <i>Journal of Luminescence</i>. 2010;130(10):1958-1962. doi:<a href=\"https://doi.org/10.1016/j.jlumin.2010.05.012\">10.1016/j.jlumin.2010.05.012</a>","short":"S. Herres-Pawlis, G. Berth, V. Wiedemeier, L. Schmidt, A. Zrenner, H.-J. Warnecke, Journal of Luminescence 130 (2010) 1958–1962.","chicago":"Herres-Pawlis, Sonja, Gerhard Berth, Volker Wiedemeier, Ludger Schmidt, Artur Zrenner, and Hans-Joachim Warnecke. “Oxygen Sensing by Fluorescence Quenching of [Cu(Btmgp)I].” <i>Journal of Luminescence</i> 130, no. 10 (2010): 1958–62. <a href=\"https://doi.org/10.1016/j.jlumin.2010.05.012\">https://doi.org/10.1016/j.jlumin.2010.05.012</a>."},"volume":130,"user_id":"49428","publisher":"Elsevier BV","_id":"4548","page":"1958-1962","status":"public"},{"doi":"10.1088/0268-1242/25/7/075003","article_number":"075003","language":[{"iso":"eng"}],"publication_status":"published","date_updated":"2022-01-06T07:01:09Z","article_type":"original","intvolume":"        25","year":"2010","title":"Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers","publication_identifier":{"issn":["0268-1242","1361-6641"]},"author":[{"last_name":"Larramendi","first_name":"E M","full_name":"Larramendi, E M"},{"full_name":"Berth, Gerhard","first_name":"Gerhard","last_name":"Berth","id":"53"},{"last_name":"Wiedemeier","first_name":"V","full_name":"Wiedemeier, V"},{"full_name":"Hüsch, K-P","first_name":"K-P","last_name":"Hüsch"},{"id":"606","first_name":"Artur","orcid":"0000-0002-5190-0944","last_name":"Zrenner","full_name":"Zrenner, Artur"},{"last_name":"Woggon","first_name":"U","full_name":"Woggon, U"},{"full_name":"Tschumak, E","last_name":"Tschumak","first_name":"E"},{"full_name":"Lischka, K","first_name":"K","last_name":"Lischka"},{"full_name":"Schikora, D","first_name":"D","last_name":"Schikora"}],"type":"journal_article","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"date_created":"2018-09-20T12:35:35Z","abstract":[{"lang":"eng","text":"Damage caused by laser irradiation on the surface of ZnTe epilayers was studied by micro-Raman and atomic force microscopy (AFM). ZnTe LO-phonon overtones up to four order and TO + (n − 1)LO zone-center phonons were observed in the resonant micro-Raman spectra at room temperature. Discrepancies in the literature regarding the origin of two features observed at low frequencies around 120 and 140 cm−1 in the Raman spectrum of ZnTe are discussed and resolved. These Raman peaks were not detected by using a low excitation laser power density on a Zn-terminated ZnTe surface; however, with the increase of the laser power density they were found to arise irreversibly. The correspondence of these peaks in a wave number with the strongest Raman peaks of the crystalline tellurium phase and the intensity enhancement behavior with the laser power in a similar way as for CdTe strongly suggests the formation of crystalline tellurium aggregates on the layer surface due to laser irradiation damage. AFM data reveal the occurrence of laser ablation on the ZnTe surface even though the surface temperature of the sample is below the melting point."}],"publication":"Semiconductor Science and Technology","issue":"7","user_id":"49428","volume":25,"publisher":"IOP Publishing","_id":"4549","status":"public","citation":{"ama":"Larramendi EM, Berth G, Wiedemeier V, et al. Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers. <i>Semiconductor Science and Technology</i>. 2010;25(7). doi:<a href=\"https://doi.org/10.1088/0268-1242/25/7/075003\">10.1088/0268-1242/25/7/075003</a>","bibtex":"@article{Larramendi_Berth_Wiedemeier_Hüsch_Zrenner_Woggon_Tschumak_Lischka_Schikora_2010, title={Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers}, volume={25}, DOI={<a href=\"https://doi.org/10.1088/0268-1242/25/7/075003\">10.1088/0268-1242/25/7/075003</a>}, number={7075003}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Larramendi, E M and Berth, Gerhard and Wiedemeier, V and Hüsch, K-P and Zrenner, Artur and Woggon, U and Tschumak, E and Lischka, K and Schikora, D}, year={2010} }","mla":"Larramendi, E. M., et al. “Intensity Enhancement of Te Raman Modes by Laser Damage in ZnTe Epilayers.” <i>Semiconductor Science and Technology</i>, vol. 25, no. 7, 075003, IOP Publishing, 2010, doi:<a href=\"https://doi.org/10.1088/0268-1242/25/7/075003\">10.1088/0268-1242/25/7/075003</a>.","chicago":"Larramendi, E M, Gerhard Berth, V Wiedemeier, K-P Hüsch, Artur Zrenner, U Woggon, E Tschumak, K Lischka, and D Schikora. “Intensity Enhancement of Te Raman Modes by Laser Damage in ZnTe Epilayers.” <i>Semiconductor Science and Technology</i> 25, no. 7 (2010). <a href=\"https://doi.org/10.1088/0268-1242/25/7/075003\">https://doi.org/10.1088/0268-1242/25/7/075003</a>.","short":"E.M. Larramendi, G. Berth, V. Wiedemeier, K.-P. Hüsch, A. Zrenner, U. Woggon, E. Tschumak, K. Lischka, D. Schikora, Semiconductor Science and Technology 25 (2010).","apa":"Larramendi, E. M., Berth, G., Wiedemeier, V., Hüsch, K.-P., Zrenner, A., Woggon, U., … Schikora, D. (2010). Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers. <i>Semiconductor Science and Technology</i>, <i>25</i>(7). <a href=\"https://doi.org/10.1088/0268-1242/25/7/075003\">https://doi.org/10.1088/0268-1242/25/7/075003</a>","ieee":"E. M. Larramendi <i>et al.</i>, “Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers,” <i>Semiconductor Science and Technology</i>, vol. 25, no. 7, 2010."}},{"citation":{"apa":"Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner, A., &#38; Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. <i>Applied Physics Letters</i>, <i>97</i>(14). <a href=\"https://doi.org/10.1063/1.3488812\">https://doi.org/10.1063/1.3488812</a>","ieee":"M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode,” <i>Applied Physics Letters</i>, vol. 97, no. 14, 2010.","chicago":"Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, Artur Zrenner, and Cedrik Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” <i>Applied Physics Letters</i> 97, no. 14 (2010). <a href=\"https://doi.org/10.1063/1.3488812\">https://doi.org/10.1063/1.3488812</a>.","short":"M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, C. Meier, Applied Physics Letters 97 (2010).","mla":"Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” <i>Applied Physics Letters</i>, vol. 97, no. 14, 143101, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>.","ama":"Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. <i>Applied Physics Letters</i>. 2010;97(14). doi:<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>","bibtex":"@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010, title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}, volume={97}, DOI={<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>}, number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, Artur and Meier, Cedrik}, year={2010} }"},"status":"public","volume":97,"user_id":"20798","_id":"4550","publisher":"AIP Publishing","abstract":[{"lang":"eng","text":"We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski–Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices."}],"publication":"Applied Physics Letters","issue":"14","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"287"}],"type":"journal_article","date_created":"2018-09-20T12:38:51Z","intvolume":"        97","article_type":"original","date_updated":"2022-01-06T07:01:09Z","publication_status":"published","author":[{"full_name":"Mehta, M.","first_name":"M.","last_name":"Mehta"},{"full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter","id":"37763"},{"first_name":"A. D.","last_name":"Wieck","full_name":"Wieck, A. D."},{"full_name":"Michaelis de Vasconcellos, S.","first_name":"S.","last_name":"Michaelis de Vasconcellos"},{"full_name":"Zrenner, Artur","last_name":"Zrenner","orcid":"0000-0002-5190-0944","first_name":"Artur","id":"606"},{"id":"20798","full_name":"Meier, Cedrik","last_name":"Meier","first_name":"Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572"}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"title":"An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode","year":"2010","doi":"10.1063/1.3488812","language":[{"iso":"eng"}],"article_number":"143101"},{"abstract":[{"text":"An intentional positioning of optically active quantum dots using site-selective growth by a combination of molecular beam epitaxy (MBE) and focused ion beam (FIB) implantation in an all-ultra-high-vacuum (UHV) setup has been successfully demonstrated. A square array of periodic holes on GaAs substrate was fabricated with FIB of 30 keV ions followed by an in situ annealing step. Subsequently, the patterned holes were overgrown with an optimized amount of InAs in order to achieve site-selective growth of the QDs on the patterned holes. Under well-optimized conditions, a selectivity of single quantum dot growth in the patterned holes of 52% was achieved. Thereafter, carrier injection and subsequent radiative recombination from the positioned InAs/GaAs self-assembled QDs was investigated by embedding the QDs in the intrinsic part of a GaAs-based p–i–n junction device. Electroluminescence spectra taken at 77 K show interband transitions up to the fifth excited state from the QDs.","lang":"eng"}],"publication":"Physica E: Low-dimensional Systems and Nanostructures","issue":"10","type":"journal_article","keyword":["Molecular beam epitaxy","Focused ion beam","Self-assembled quantum dot","Electroluminescence"],"department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"287"}],"date_created":"2018-09-20T12:42:40Z","date_updated":"2022-01-06T07:01:09Z","publication_status":"published","intvolume":"        42","article_type":"original","year":"2010","title":"Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode","author":[{"first_name":"Minisha","last_name":"Mehta","full_name":"Mehta, Minisha"},{"full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter","id":"37763"},{"full_name":"Melnikov, Alexander","last_name":"Melnikov","first_name":"Alexander"},{"first_name":"Andreas D.","last_name":"Wieck","full_name":"Wieck, Andreas D."},{"full_name":"Michaelis de Vasconcellos, Steffen","last_name":"Michaelis de Vasconcellos","first_name":"Steffen"},{"last_name":"Baumgarten","first_name":"Tim","full_name":"Baumgarten, Tim"},{"orcid":"0000-0002-5190-0944","first_name":"Artur","last_name":"Zrenner","full_name":"Zrenner, Artur","id":"606"},{"first_name":"Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier","full_name":"Meier, Cedrik","id":"20798"}],"publication_identifier":{"issn":["1386-9477"]},"doi":"10.1016/j.physe.2009.12.053","language":[{"iso":"eng"}],"citation":{"bibtex":"@article{Mehta_Reuter_Melnikov_Wieck_Michaelis de Vasconcellos_Baumgarten_Zrenner_Meier_2010, title={Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode}, volume={42}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2009.12.053\">10.1016/j.physe.2009.12.053</a>}, number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures}, publisher={Elsevier BV}, author={Mehta, Minisha and Reuter, Dirk and Melnikov, Alexander and Wieck, Andreas D. and Michaelis de Vasconcellos, Steffen and Baumgarten, Tim and Zrenner, Artur and Meier, Cedrik}, year={2010}, pages={2749–2752} }","ama":"Mehta M, Reuter D, Melnikov A, et al. Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2010;42(10):2749-2752. doi:<a href=\"https://doi.org/10.1016/j.physe.2009.12.053\">10.1016/j.physe.2009.12.053</a>","mla":"Mehta, Minisha, et al. “Intentionally Positioned Self-Assembled InAs Quantum Dots in an Electroluminescent p–i–n Junction Diode.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, vol. 42, no. 10, Elsevier BV, 2010, pp. 2749–52, doi:<a href=\"https://doi.org/10.1016/j.physe.2009.12.053\">10.1016/j.physe.2009.12.053</a>.","chicago":"Mehta, Minisha, Dirk Reuter, Alexander Melnikov, Andreas D. Wieck, Steffen Michaelis de Vasconcellos, Tim Baumgarten, Artur Zrenner, and Cedrik Meier. “Intentionally Positioned Self-Assembled InAs Quantum Dots in an Electroluminescent p–i–n Junction Diode.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i> 42, no. 10 (2010): 2749–52. <a href=\"https://doi.org/10.1016/j.physe.2009.12.053\">https://doi.org/10.1016/j.physe.2009.12.053</a>.","short":"M. Mehta, D. Reuter, A. Melnikov, A.D. Wieck, S. Michaelis de Vasconcellos, T. Baumgarten, A. Zrenner, C. Meier, Physica E: Low-Dimensional Systems and Nanostructures 42 (2010) 2749–2752.","ieee":"M. Mehta <i>et al.</i>, “Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, vol. 42, no. 10, pp. 2749–2752, 2010.","apa":"Mehta, M., Reuter, D., Melnikov, A., Wieck, A. D., Michaelis de Vasconcellos, S., Baumgarten, T., … Meier, C. (2010). Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, <i>42</i>(10), 2749–2752. <a href=\"https://doi.org/10.1016/j.physe.2009.12.053\">https://doi.org/10.1016/j.physe.2009.12.053</a>"},"status":"public","user_id":"20798","volume":42,"page":"2749-2752","_id":"4551","publisher":"Elsevier BV"},{"citation":{"short":"M. Panfilova, S. Michaelis de Vasconcellos, A. Pawlis, K. Lischka, A. Zrenner, Physica E: Low-Dimensional Systems and Nanostructures 42 (2010) 2521–2523.","chicago":"Panfilova, M., S. Michaelis de Vasconcellos, A. Pawlis, K. Lischka, and Artur Zrenner. “Resonant Photocurrent-Spectroscopy of Individual CdSe Quantum Dots.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i> 42, no. 10 (2010): 2521–23. <a href=\"https://doi.org/10.1016/j.physe.2010.01.013\">https://doi.org/10.1016/j.physe.2010.01.013</a>.","ieee":"M. Panfilova, S. Michaelis de Vasconcellos, A. Pawlis, K. Lischka, and A. Zrenner, “Resonant photocurrent-spectroscopy of individual CdSe quantum dots,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, vol. 42, no. 10, pp. 2521–2523, 2010.","apa":"Panfilova, M., Michaelis de Vasconcellos, S., Pawlis, A., Lischka, K., &#38; Zrenner, A. (2010). Resonant photocurrent-spectroscopy of individual CdSe quantum dots. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, <i>42</i>(10), 2521–2523. <a href=\"https://doi.org/10.1016/j.physe.2010.01.013\">https://doi.org/10.1016/j.physe.2010.01.013</a>","bibtex":"@article{Panfilova_Michaelis de Vasconcellos_Pawlis_Lischka_Zrenner_2010, title={Resonant photocurrent-spectroscopy of individual CdSe quantum dots}, volume={42}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2010.01.013\">10.1016/j.physe.2010.01.013</a>}, number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures}, publisher={Elsevier BV}, author={Panfilova, M. and Michaelis de Vasconcellos, S. and Pawlis, A. and Lischka, K. and Zrenner, Artur}, year={2010}, pages={2521–2523} }","ama":"Panfilova M, Michaelis de Vasconcellos S, Pawlis A, Lischka K, Zrenner A. Resonant photocurrent-spectroscopy of individual CdSe quantum dots. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2010;42(10):2521-2523. doi:<a href=\"https://doi.org/10.1016/j.physe.2010.01.013\">10.1016/j.physe.2010.01.013</a>","mla":"Panfilova, M., et al. “Resonant Photocurrent-Spectroscopy of Individual CdSe Quantum Dots.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, vol. 42, no. 10, Elsevier BV, 2010, pp. 2521–23, doi:<a href=\"https://doi.org/10.1016/j.physe.2010.01.013\">10.1016/j.physe.2010.01.013</a>."},"status":"public","user_id":"49428","volume":42,"page":"2521-2523","_id":"4552","publisher":"Elsevier BV","abstract":[{"lang":"eng","text":"Here we report on investigations on CdSe quantum dots incorporated in ZnSe based Schottky photodiodes with near-field shadow masks. Photoluminescence and photocurrent of individual quantum dots were studied as a function of the applied bias voltage. The exciton energy of the quantum dot ground state transition was shifted to the excitation energy by using the Stark effect tuning via an external bias voltage. Under the condition of resonance with the laser excitation energy we observed a resonant photocurrent signal due to the tunnelling of carriers out of the quantum dots at electric fields above 500 kV/cm."}],"issue":"10","publication":"Physica E: Low-dimensional Systems and Nanostructures","keyword":["CdSe/ZnSe quantum dots","Photodiode","Quantum confined Stark Effect","Photocurrent","II–VI Semiconductors"],"type":"journal_article","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"date_created":"2018-09-20T12:45:46Z","date_updated":"2022-01-06T07:01:09Z","publication_status":"published","intvolume":"        42","article_type":"original","title":"Resonant photocurrent-spectroscopy of individual CdSe quantum dots","year":"2010","publication_identifier":{"issn":["1386-9477"]},"author":[{"full_name":"Panfilova, M.","last_name":"Panfilova","first_name":"M."},{"first_name":"S.","last_name":"Michaelis de Vasconcellos","full_name":"Michaelis de Vasconcellos, S."},{"first_name":"A.","last_name":"Pawlis","full_name":"Pawlis, A."},{"full_name":"Lischka, K.","first_name":"K.","last_name":"Lischka"},{"full_name":"Zrenner, Artur","orcid":"0000-0002-5190-0944","first_name":"Artur","last_name":"Zrenner","id":"606"}],"doi":"10.1016/j.physe.2010.01.013","language":[{"iso":"eng"}]},{"author":[{"full_name":"Ishikawa, Atsushi","last_name":"Ishikawa","first_name":"Atsushi"},{"full_name":"Oulton, Rupert F.","first_name":"Rupert F.","last_name":"Oulton"},{"id":"30525","first_name":"Thomas","last_name":"Zentgraf","orcid":"0000-0002-8662-1101","full_name":"Zentgraf, Thomas"},{"last_name":"Zhang","first_name":"Xiang","full_name":"Zhang, Xiang"}],"year":"2010","title":"Extremely low-loss slow-light modes in plasmonic dielectric hybrid systems","status":"public","publication_status":"published","date_updated":"2022-01-06T07:03:30Z","publisher":"SPIE","_id":"7251","language":[{"iso":"eng"}],"editor":[{"last_name":"Stockman","first_name":"Mark I.","full_name":"Stockman, Mark I."}],"user_id":"30525","doi":"10.1117/12.860190","citation":{"ieee":"A. Ishikawa, R. F. Oulton, T. Zentgraf, and X. Zhang, “Extremely low-loss slow-light modes in plasmonic dielectric hybrid systems,” in <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>, 2010.","apa":"Ishikawa, A., Oulton, R. F., Zentgraf, T., &#38; Zhang, X. (2010). Extremely low-loss slow-light modes in plasmonic dielectric hybrid systems. In M. I. Stockman (Ed.), <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>. SPIE. <a href=\"https://doi.org/10.1117/12.860190\">https://doi.org/10.1117/12.860190</a>","mla":"Ishikawa, Atsushi, et al. “Extremely Low-Loss Slow-Light Modes in Plasmonic Dielectric Hybrid Systems.” <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>, edited by Mark I. Stockman, SPIE, 2010, doi:<a href=\"https://doi.org/10.1117/12.860190\">10.1117/12.860190</a>.","bibtex":"@inproceedings{Ishikawa_Oulton_Zentgraf_Zhang_2010, title={Extremely low-loss slow-light modes in plasmonic dielectric hybrid systems}, DOI={<a href=\"https://doi.org/10.1117/12.860190\">10.1117/12.860190</a>}, booktitle={Plasmonics: Metallic Nanostructures and Their Optical Properties VIII}, publisher={SPIE}, author={Ishikawa, Atsushi and Oulton, Rupert F. and Zentgraf, Thomas and Zhang, Xiang}, editor={Stockman, Mark I.Editor}, year={2010} }","short":"A. Ishikawa, R.F. Oulton, T. Zentgraf, X. Zhang, in: M.I. Stockman (Ed.), Plasmonics: Metallic Nanostructures and Their Optical Properties VIII, SPIE, 2010.","ama":"Ishikawa A, Oulton RF, Zentgraf T, Zhang X. Extremely low-loss slow-light modes in plasmonic dielectric hybrid systems. In: Stockman MI, ed. <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>. SPIE; 2010. doi:<a href=\"https://doi.org/10.1117/12.860190\">10.1117/12.860190</a>","chicago":"Ishikawa, Atsushi, Rupert F. Oulton, Thomas Zentgraf, and Xiang Zhang. “Extremely Low-Loss Slow-Light Modes in Plasmonic Dielectric Hybrid Systems.” In <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>, edited by Mark I. Stockman. SPIE, 2010. <a href=\"https://doi.org/10.1117/12.860190\">https://doi.org/10.1117/12.860190</a>."},"publication":"Plasmonics: Metallic Nanostructures and Their Optical Properties VIII","date_created":"2019-01-30T07:22:54Z","department":[{"_id":"15"},{"_id":"230"}],"type":"conference"},{"publication":"Plasmonics: Metallic Nanostructures and Their Optical Properties VIII","citation":{"bibtex":"@inproceedings{Sorger_Oulton_Zentgraf_Ma_Gladden_Dai_Bartal_Zhang_2010, title={Semiconductor plasmon laser}, DOI={<a href=\"https://doi.org/10.1117/12.859136\">10.1117/12.859136</a>}, booktitle={Plasmonics: Metallic Nanostructures and Their Optical Properties VIII}, publisher={SPIE}, author={Sorger, Volker J. and Oulton, Rupert F. and Zentgraf, Thomas and Ma, Renmin and Gladden, Christopher and Dai, Lun and Bartal, Guy and Zhang, Xiang}, editor={Stockman, Mark I.Editor}, year={2010} }","ama":"Sorger VJ, Oulton RF, Zentgraf T, et al. Semiconductor plasmon laser. In: Stockman MI, ed. <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>. SPIE; 2010. doi:<a href=\"https://doi.org/10.1117/12.859136\">10.1117/12.859136</a>","mla":"Sorger, Volker J., et al. “Semiconductor Plasmon Laser.” <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>, edited by Mark I. Stockman, SPIE, 2010, doi:<a href=\"https://doi.org/10.1117/12.859136\">10.1117/12.859136</a>.","short":"V.J. Sorger, R.F. Oulton, T. Zentgraf, R. Ma, C. Gladden, L. Dai, G. Bartal, X. Zhang, in: M.I. Stockman (Ed.), Plasmonics: Metallic Nanostructures and Their Optical Properties VIII, SPIE, 2010.","chicago":"Sorger, Volker J., Rupert F. Oulton, Thomas Zentgraf, Renmin Ma, Christopher Gladden, Lun Dai, Guy Bartal, and Xiang Zhang. “Semiconductor Plasmon Laser.” In <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>, edited by Mark I. Stockman. SPIE, 2010. <a href=\"https://doi.org/10.1117/12.859136\">https://doi.org/10.1117/12.859136</a>.","ieee":"V. J. Sorger <i>et al.</i>, “Semiconductor plasmon laser,” in <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>, 2010.","apa":"Sorger, V. J., Oulton, R. F., Zentgraf, T., Ma, R., Gladden, C., Dai, L., … Zhang, X. (2010). Semiconductor plasmon laser. In M. I. Stockman (Ed.), <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>. SPIE. <a href=\"https://doi.org/10.1117/12.859136\">https://doi.org/10.1117/12.859136</a>"},"type":"conference","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-01-30T07:24:06Z","publication_status":"published","date_updated":"2022-01-06T07:03:30Z","title":"Semiconductor plasmon laser","year":"2010","status":"public","author":[{"first_name":"Volker J.","last_name":"Sorger","full_name":"Sorger, Volker J."},{"full_name":"Oulton, Rupert F.","last_name":"Oulton","first_name":"Rupert F."},{"id":"30525","full_name":"Zentgraf, Thomas","orcid":"0000-0002-8662-1101","first_name":"Thomas","last_name":"Zentgraf"},{"first_name":"Renmin","last_name":"Ma","full_name":"Ma, Renmin"},{"last_name":"Gladden","first_name":"Christopher","full_name":"Gladden, Christopher"},{"full_name":"Dai, Lun","first_name":"Lun","last_name":"Dai"},{"full_name":"Bartal, Guy","last_name":"Bartal","first_name":"Guy"},{"first_name":"Xiang","last_name":"Zhang","full_name":"Zhang, Xiang"}],"user_id":"30525","doi":"10.1117/12.859136","editor":[{"full_name":"Stockman, Mark I.","last_name":"Stockman","first_name":"Mark I."}],"_id":"7252","language":[{"iso":"eng"}],"publisher":"SPIE"},{"date_created":"2019-02-04T14:35:22Z","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"287"}],"type":"journal_article","publication":"Journal of The Electrochemical Society","issue":"2","language":[{"iso":"eng"}],"article_number":"H119","doi":"10.1149/1.3519999","author":[{"full_name":"Mehta, M.","last_name":"Mehta","first_name":"M."},{"orcid":"https://orcid.org/0000-0002-3787-3572","first_name":"Cedrik","last_name":"Meier","full_name":"Meier, Cedrik","id":"20798"}],"publication_identifier":{"issn":["0013-4651"]},"year":"2010","title":"Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals","intvolume":"       158","publication_status":"published","date_updated":"2022-01-06T07:03:39Z","citation":{"chicago":"Mehta, M., and Cedrik Meier. “Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals.” <i>Journal of The Electrochemical Society</i> 158, no. 2 (2010). <a href=\"https://doi.org/10.1149/1.3519999\">https://doi.org/10.1149/1.3519999</a>.","short":"M. Mehta, C. Meier, Journal of The Electrochemical Society 158 (2010).","ieee":"M. Mehta and C. Meier, “Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals,” <i>Journal of The Electrochemical Society</i>, vol. 158, no. 2, 2010.","apa":"Mehta, M., &#38; Meier, C. (2010). Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals. <i>Journal of The Electrochemical Society</i>, <i>158</i>(2). <a href=\"https://doi.org/10.1149/1.3519999\">https://doi.org/10.1149/1.3519999</a>","bibtex":"@article{Mehta_Meier_2010, title={Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals}, volume={158}, DOI={<a href=\"https://doi.org/10.1149/1.3519999\">10.1149/1.3519999</a>}, number={2H119}, journal={Journal of The Electrochemical Society}, publisher={The Electrochemical Society}, author={Mehta, M. and Meier, Cedrik}, year={2010} }","ama":"Mehta M, Meier C. Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals. <i>Journal of The Electrochemical Society</i>. 2010;158(2). doi:<a href=\"https://doi.org/10.1149/1.3519999\">10.1149/1.3519999</a>","mla":"Mehta, M., and Cedrik Meier. “Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals.” <i>Journal of The Electrochemical Society</i>, vol. 158, no. 2, H119, The Electrochemical Society, 2010, doi:<a href=\"https://doi.org/10.1149/1.3519999\">10.1149/1.3519999</a>."},"_id":"7494","publisher":"The Electrochemical Society","volume":158,"user_id":"20798","status":"public"},{"date_updated":"2022-01-06T07:03:39Z","publication_status":"published","intvolume":"        21","year":"2010","title":"Electroluminescence from silicon nanoparticles fabricated from the gas phase","author":[{"full_name":"Theis, Jens","first_name":"Jens","last_name":"Theis"},{"full_name":"Geller, Martin","first_name":"Martin","last_name":"Geller"},{"last_name":"Lorke","first_name":"Axel","full_name":"Lorke, Axel"},{"full_name":"Wiggers, Hartmut","last_name":"Wiggers","first_name":"Hartmut"},{"last_name":"Wieck","first_name":"Andreas","full_name":"Wieck, Andreas"},{"id":"20798","full_name":"Meier, Cedrik","first_name":"Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier"}],"publication_identifier":{"issn":["0957-4484","1361-6528"]},"doi":"10.1088/0957-4484/21/45/455201","article_number":"455201","language":[{"iso":"eng"}],"publication":"Nanotechnology","issue":"45","type":"journal_article","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"287"}],"date_created":"2019-02-04T14:39:19Z","status":"public","user_id":"20798","volume":21,"_id":"7496","publisher":"IOP Publishing","citation":{"apa":"Theis, J., Geller, M., Lorke, A., Wiggers, H., Wieck, A., &#38; Meier, C. (2010). Electroluminescence from silicon nanoparticles fabricated from the gas phase. <i>Nanotechnology</i>, <i>21</i>(45). <a href=\"https://doi.org/10.1088/0957-4484/21/45/455201\">https://doi.org/10.1088/0957-4484/21/45/455201</a>","mla":"Theis, Jens, et al. “Electroluminescence from Silicon Nanoparticles Fabricated from the Gas Phase.” <i>Nanotechnology</i>, vol. 21, no. 45, 455201, IOP Publishing, 2010, doi:<a href=\"https://doi.org/10.1088/0957-4484/21/45/455201\">10.1088/0957-4484/21/45/455201</a>.","ieee":"J. Theis, M. Geller, A. Lorke, H. Wiggers, A. Wieck, and C. Meier, “Electroluminescence from silicon nanoparticles fabricated from the gas phase,” <i>Nanotechnology</i>, vol. 21, no. 45, 2010.","ama":"Theis J, Geller M, Lorke A, Wiggers H, Wieck A, Meier C. Electroluminescence from silicon nanoparticles fabricated from the gas phase. <i>Nanotechnology</i>. 2010;21(45). doi:<a href=\"https://doi.org/10.1088/0957-4484/21/45/455201\">10.1088/0957-4484/21/45/455201</a>","short":"J. Theis, M. Geller, A. Lorke, H. Wiggers, A. Wieck, C. Meier, Nanotechnology 21 (2010).","chicago":"Theis, Jens, Martin Geller, Axel Lorke, Hartmut Wiggers, Andreas Wieck, and Cedrik Meier. “Electroluminescence from Silicon Nanoparticles Fabricated from the Gas Phase.” <i>Nanotechnology</i> 21, no. 45 (2010). <a href=\"https://doi.org/10.1088/0957-4484/21/45/455201\">https://doi.org/10.1088/0957-4484/21/45/455201</a>.","bibtex":"@article{Theis_Geller_Lorke_Wiggers_Wieck_Meier_2010, title={Electroluminescence from silicon nanoparticles fabricated from the gas phase}, volume={21}, DOI={<a href=\"https://doi.org/10.1088/0957-4484/21/45/455201\">10.1088/0957-4484/21/45/455201</a>}, number={45455201}, journal={Nanotechnology}, publisher={IOP Publishing}, author={Theis, Jens and Geller, Martin and Lorke, Axel and Wiggers, Hartmut and Wieck, Andreas and Meier, Cedrik}, year={2010} }"}},{"_id":"4153","language":[{"iso":"eng"}],"page":"740-744","volume":12,"user_id":"55706","author":[{"first_name":"D.","last_name":"Gogel","full_name":"Gogel, D."},{"full_name":"Weinl, M.","last_name":"Weinl","first_name":"M."},{"last_name":"Lindner","first_name":"Jörg","full_name":"Lindner, Jörg","id":"20797"},{"first_name":"B.","last_name":"Stritzker","full_name":"Stritzker, B."}],"title":"Plasma modification of nanosphere lithography masks made of polystyrene beads","year":"2010","status":"public","article_type":"original","intvolume":"        12","date_updated":"2022-01-06T07:00:26Z","date_created":"2018-08-27T13:29:28Z","department":[{"_id":"286"},{"_id":"230"}],"type":"journal_article","citation":{"mla":"Gogel, D., et al. “Plasma Modification of Nanosphere Lithography Masks Made of Polystyrene Beads.” <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i>, vol. 12, no. 3, 2010, pp. 740–44.","bibtex":"@article{Gogel_Weinl_Lindner_Stritzker_2010, title={Plasma modification of nanosphere lithography masks made of polystyrene beads}, volume={12}, number={3}, journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS}, author={Gogel, D. and Weinl, M. and Lindner, Jörg and Stritzker, B.}, year={2010}, pages={740–744} }","ama":"Gogel D, Weinl M, Lindner J, Stritzker B. Plasma modification of nanosphere lithography masks made of polystyrene beads. <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i>. 2010;12(3):740-744.","ieee":"D. Gogel, M. Weinl, J. Lindner, and B. Stritzker, “Plasma modification of nanosphere lithography masks made of polystyrene beads,” <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i>, vol. 12, no. 3, pp. 740–744, 2010.","apa":"Gogel, D., Weinl, M., Lindner, J., &#38; Stritzker, B. (2010). Plasma modification of nanosphere lithography masks made of polystyrene beads. <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i>, <i>12</i>(3), 740–744.","short":"D. Gogel, M. Weinl, J. Lindner, B. Stritzker, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 12 (2010) 740–744.","chicago":"Gogel, D., M. Weinl, Jörg Lindner, and B. Stritzker. “Plasma Modification of Nanosphere Lithography Masks Made of Polystyrene Beads.” <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i> 12, no. 3 (2010): 740–44."},"issue":"3","publication":"JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS","abstract":[{"lang":"eng","text":"Nanosphere lithography (NSL) masks consisting of mono- or double-layers of polystyrene (PS) nano-beads are fabricated on silicon exploiting the self-organization of PS particles during the controlled drying of a colloidal suspension on a surface. The shape changes and shrinkage of PS sphere masks upon treatment in an air plasma are studied as a function of initial sphere size, plasma power and treatment time. The influence of several experimental parameters, including the plasma induced temperature rise, are analysed using scanning and transmission electron microscopy. It is demonstrated that a variety of new intriguing nanopatterns can be generated on silicon surfaces by the combination of NSL and plasma techniques, largely broadening the variety of patterns available so far by NSL."}]},{"year":"2010","title":"Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*","publication_identifier":{"issn":["0009-286X","1522-2640"]},"author":[{"full_name":"Warnecke, H.-J.","first_name":"H.-J.","last_name":"Warnecke"},{"last_name":"Bothe","first_name":"D.","full_name":"Bothe, D."},{"id":"606","last_name":"Zrenner","orcid":"0000-0002-5190-0944","first_name":"Artur","full_name":"Zrenner, Artur"},{"id":"53","last_name":"Berth","first_name":"Gerhard","full_name":"Berth, Gerhard"},{"first_name":"K.-P.","last_name":"Hüsch","full_name":"Hüsch, K.-P."}],"date_updated":"2022-01-06T07:03:13Z","publication_status":"published","intvolume":"        82","article_type":"original","language":[{"iso":"ger"}],"doi":"10.1002/cite.200900169","issue":"3","publication":"Chemie Ingenieur Technik","abstract":[{"text":"Strömungsbasierte Mischprozesse sind grundlegender Bestandteil vieler chemischer Prozesse. Realisierbare Mischzeiten reichen von einigen Millisekunden bis zu Sekunden, wobei die vollständige Homogenisierung oft nicht sichergestellt ist. Werden kinetische Parameter chemischer Reaktionen dieses Zeitskalenbereichs ohne Berücksichtigung der Mischprozesse bestimmt, sind sie mischungsmaskiert und geben die inhärente chemische Kinetik nicht wieder. In dieser Arbeit wird die Validierung und Anwendung einer Methode zur Bestimmung inhärenter chemischer Kinetiken von in Flüssigphase ablaufenden chemischen Reaktionen im stationären, laminaren Flachbettmikroreaktor vorgestellt. Der verfolgte Ansatz basiert auf der mechanistischen Modellierung der Molmengen unter Berücksichtigung von Konvektion, Diffusion und Reaktion und der Bestimmung der unbekannten Parameter durch Anpassung des Modells an experimentell ermittelte Konzentrationsverläufe.","lang":"ger"}],"date_created":"2019-01-10T10:13:09Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"status":"public","page":"251-258","publisher":"Wiley","_id":"6619","user_id":"49428","volume":82,"citation":{"mla":"Warnecke, H. J., et al. “Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*.” <i>Chemie Ingenieur Technik</i>, vol. 82, no. 3, Wiley, 2010, pp. 251–58, doi:<a href=\"https://doi.org/10.1002/cite.200900169\">10.1002/cite.200900169</a>.","bibtex":"@article{Warnecke_Bothe_Zrenner_Berth_Hüsch_2010, title={Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*}, volume={82}, DOI={<a href=\"https://doi.org/10.1002/cite.200900169\">10.1002/cite.200900169</a>}, number={3}, journal={Chemie Ingenieur Technik}, publisher={Wiley}, author={Warnecke, H.-J. and Bothe, D. and Zrenner, Artur and Berth, Gerhard and Hüsch, K.-P.}, year={2010}, pages={251–258} }","ama":"Warnecke H-J, Bothe D, Zrenner A, Berth G, Hüsch K-P. Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*. <i>Chemie Ingenieur Technik</i>. 2010;82(3):251-258. doi:<a href=\"https://doi.org/10.1002/cite.200900169\">10.1002/cite.200900169</a>","ieee":"H.-J. Warnecke, D. Bothe, A. Zrenner, G. Berth, and K.-P. Hüsch, “Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*,” <i>Chemie Ingenieur Technik</i>, vol. 82, no. 3, pp. 251–258, 2010.","apa":"Warnecke, H.-J., Bothe, D., Zrenner, A., Berth, G., &#38; Hüsch, K.-P. (2010). Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*. <i>Chemie Ingenieur Technik</i>, <i>82</i>(3), 251–258. <a href=\"https://doi.org/10.1002/cite.200900169\">https://doi.org/10.1002/cite.200900169</a>","short":"H.-J. Warnecke, D. Bothe, A. Zrenner, G. Berth, K.-P. Hüsch, Chemie Ingenieur Technik 82 (2010) 251–258.","chicago":"Warnecke, H.-J., D. Bothe, Artur Zrenner, Gerhard Berth, and K.-P. Hüsch. “Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*.” <i>Chemie Ingenieur Technik</i> 82, no. 3 (2010): 251–58. <a href=\"https://doi.org/10.1002/cite.200900169\">https://doi.org/10.1002/cite.200900169</a>."}},{"year":"2010","status":"public","title":"Die digitale Edition von Webers Klarinettenquintett – Ein Vergleich der Edirom-Versionen 2004 und 2008","publication_identifier":{"isbn":["9783110231144"]},"author":[{"full_name":"Röwenstrunk, Daniel","first_name":"Daniel","orcid":"https://orcid.org/0000-0001-6271-2095","last_name":"Röwenstrunk","id":"439"}],"date_updated":"2022-01-06T06:51:27Z","publication_status":"published","_id":"12943","language":[{"iso":"eng"}],"doi":"10.1515/9783110231144.61","user_id":"439","editor":[{"first_name":"Peter","last_name":"Stadler","full_name":"Stadler, Peter"},{"full_name":"Veit, Joachim","first_name":"Joachim","last_name":"Veit"}],"publication":"Digitale Edition zwischen Experiment und Standardisierung","citation":{"mla":"Röwenstrunk, Daniel. “Die Digitale Edition von Webers Klarinettenquintett – Ein Vergleich Der Edirom-Versionen 2004 Und 2008.” <i>Digitale Edition Zwischen Experiment Und Standardisierung</i>, edited by Peter Stadler and Joachim Veit, 2010, doi:<a href=\"https://doi.org/10.1515/9783110231144.61\">10.1515/9783110231144.61</a>.","bibtex":"@inbook{Röwenstrunk_2010, place={Berlin, New York}, title={Die digitale Edition von Webers Klarinettenquintett – Ein Vergleich der Edirom-Versionen 2004 und 2008}, DOI={<a href=\"https://doi.org/10.1515/9783110231144.61\">10.1515/9783110231144.61</a>}, booktitle={Digitale Edition zwischen Experiment und Standardisierung}, author={Röwenstrunk, Daniel}, editor={Stadler, Peter and Veit, JoachimEditors}, year={2010} }","ama":"Röwenstrunk D. Die digitale Edition von Webers Klarinettenquintett – Ein Vergleich der Edirom-Versionen 2004 und 2008. In: Stadler P, Veit J, eds. <i>Digitale Edition Zwischen Experiment Und Standardisierung</i>. Berlin, New York; 2010. doi:<a href=\"https://doi.org/10.1515/9783110231144.61\">10.1515/9783110231144.61</a>","ieee":"D. Röwenstrunk, “Die digitale Edition von Webers Klarinettenquintett – Ein Vergleich der Edirom-Versionen 2004 und 2008,” in <i>Digitale Edition zwischen Experiment und Standardisierung</i>, P. Stadler and J. Veit, Eds. Berlin, New York, 2010.","apa":"Röwenstrunk, D. (2010). Die digitale Edition von Webers Klarinettenquintett – Ein Vergleich der Edirom-Versionen 2004 und 2008. In P. Stadler &#38; J. Veit (Eds.), <i>Digitale Edition zwischen Experiment und Standardisierung</i>. Berlin, New York. <a href=\"https://doi.org/10.1515/9783110231144.61\">https://doi.org/10.1515/9783110231144.61</a>","chicago":"Röwenstrunk, Daniel. “Die Digitale Edition von Webers Klarinettenquintett – Ein Vergleich Der Edirom-Versionen 2004 Und 2008.” In <i>Digitale Edition Zwischen Experiment Und Standardisierung</i>, edited by Peter Stadler and Joachim Veit. Berlin, New York, 2010. <a href=\"https://doi.org/10.1515/9783110231144.61\">https://doi.org/10.1515/9783110231144.61</a>.","short":"D. Röwenstrunk, in: P. Stadler, J. Veit (Eds.), Digitale Edition Zwischen Experiment Und Standardisierung, Berlin, New York, 2010."},"place":"Berlin, New York","date_created":"2019-08-16T18:34:08Z","type":"book_chapter","department":[{"_id":"233"}]},{"type":"conference","department":[{"_id":"219"},{"_id":"624"},{"_id":"367"},{"_id":"9"}],"date_created":"2021-05-07T13:23:34Z","quality_controlled":"1","abstract":[{"text":"Generative production techniques have the advantage of manufacturing parts via an additive process without needing a forming tool. One of these additive manufacturing technologies is “Fused Deposition Modeling” (FDM). From a 3D-CAD data set, components and assemblies are manufactured out of thermoplastic material in only a few working steps. Native software automatically slices the data, calculates the support structures, and creates toolpaths. The parts then are built up layer by layer by means of an additive process. An extrusion head deposits the molten thermoplastic filament to create each layer. This technology began as a process for creating prototype parts; recently it has found new utility in the production of manufacturing tools and as a manufacturing process for end-use parts. In order to be used as a part for serial production, the components must possess the required mechanical properties. To this end, not only is the chosen material relevant, but a correct process control is also necessary. An interesting material for the aircraft and automotive industry is the material PEI with the trade name Ultem*9085. This material should typically be used on FDM-machines for the manufacturing of end products. The aim of the research is to determine the present mechanical data based on the process control, as well as reproducibility from job to job. In this work the influence of the orientation and the structure of the manufactured parts based on the mechanical data are analyzed. Sample parts are generated with the given parameters of the native software based upon the CAD data. First, specimens were analyzed concerning their geometry and configuration. The dimensions and weight were measured. The mechanical tests conducted were the tensile and compression tests.","lang":"eng"}],"publication":"Proceedings of International Conference Polymeric Materials","citation":{"ieee":"A. Bagsik, V. Schöppner, and E. Klemp, “FDM Part Quality Manufactured with ULTEM 9085,” 2010, doi: <a href=\"https://docplayer.net/255735-Fdm-part-quality-manufactured-with-ultem-9085.html\">https://docplayer.net/255735-Fdm-part-quality-manufactured-with-ultem-9085.html</a>.","apa":"Bagsik, A., Schöppner, V., &#38; Klemp, E. (2010). FDM Part Quality Manufactured with ULTEM 9085. <i>Proceedings of International Conference Polymeric Materials</i>. <a href=\"https://docplayer.net/255735-Fdm-part-quality-manufactured-with-ultem-9085.html\">https://docplayer.net/255735-Fdm-part-quality-manufactured-with-ultem-9085.html</a>","short":"A. Bagsik, V. Schöppner, E. Klemp, in: Proceedings of International Conference Polymeric Materials, 2010.","chicago":"Bagsik, A., Volker Schöppner, and E. Klemp. “FDM Part Quality Manufactured with ULTEM 9085.” In <i>Proceedings of International Conference Polymeric Materials</i>, 2010. <a href=\"https://docplayer.net/255735-Fdm-part-quality-manufactured-with-ultem-9085.html\">https://docplayer.net/255735-Fdm-part-quality-manufactured-with-ultem-9085.html</a>.","mla":"Bagsik, A., et al. “FDM Part Quality Manufactured with ULTEM 9085.” <i>Proceedings of International Conference Polymeric Materials</i>, 2010, doi:<a href=\"https://docplayer.net/255735-Fdm-part-quality-manufactured-with-ultem-9085.html\">https://docplayer.net/255735-Fdm-part-quality-manufactured-with-ultem-9085.html</a>.","bibtex":"@inproceedings{Bagsik_Schöppner_Klemp_2010, title={FDM Part Quality Manufactured with ULTEM 9085}, DOI={<a href=\"https://docplayer.net/255735-Fdm-part-quality-manufactured-with-ultem-9085.html\">https://docplayer.net/255735-Fdm-part-quality-manufactured-with-ultem-9085.html</a>}, booktitle={Proceedings of International Conference Polymeric Materials}, author={Bagsik, A. and Schöppner, Volker and Klemp, E.}, year={2010} }","ama":"Bagsik A, Schöppner V, Klemp E. FDM Part Quality Manufactured with ULTEM 9085. In: <i>Proceedings of International Conference Polymeric Materials</i>. ; 2010. doi:<a href=\"https://docplayer.net/255735-Fdm-part-quality-manufactured-with-ultem-9085.html\">https://docplayer.net/255735-Fdm-part-quality-manufactured-with-ultem-9085.html</a>"},"doi":"https://docplayer.net/255735-Fdm-part-quality-manufactured-with-ultem-9085.html","user_id":"70729","_id":"22050","language":[{"iso":"eng"}],"date_updated":"2022-04-25T08:04:26Z","year":"2010","title":"FDM Part Quality Manufactured with ULTEM 9085","status":"public","publication_identifier":{"isbn":["978-3-868-29282-4"]},"author":[{"first_name":"A.","last_name":"Bagsik","full_name":"Bagsik, A."},{"full_name":"Schöppner, Volker","last_name":"Schöppner","first_name":"Volker","id":"20530"},{"full_name":"Klemp, E.","first_name":"E.","last_name":"Klemp"}]},{"department":[{"_id":"63"},{"_id":"26"}],"type":"dissertation","date_created":"2020-09-21T14:07:23Z","related_material":{"link":[{"relation":"confirmation","url":"http://digital.ub.uni-paderborn.de/ubpb/urn/urn:nbn:de:hbz:466-20090212010"}]},"supervisor":[{"id":"15523","first_name":"Friedhelm","last_name":"Meyer auf der Heide","full_name":"Meyer auf der Heide, Friedhelm"}],"citation":{"bibtex":"@book{Lürwer-Brüggemeier_2009, series={Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn}, title={Mächtigkeit und Komplexität von Berechnungen mit der ganzzahligen Division}, volume={261}, publisher={Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn}, author={Lürwer-Brüggemeier, Katharina}, year={2009}, collection={Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn} }","short":"K. Lürwer-Brüggemeier, Mächtigkeit Und Komplexität von Berechnungen Mit Der Ganzzahligen Division, Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn, 2009.","ama":"Lürwer-Brüggemeier K. <i>Mächtigkeit Und Komplexität von Berechnungen Mit Der Ganzzahligen Division</i>. Vol 261. Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn; 2009.","chicago":"Lürwer-Brüggemeier, Katharina. <i>Mächtigkeit Und Komplexität von Berechnungen Mit Der Ganzzahligen Division</i>. Vol. 261. Verlagsschriftenreihe Des Heinz Nixdorf Instituts, Paderborn. Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn, 2009.","ieee":"K. Lürwer-Brüggemeier, <i>Mächtigkeit und Komplexität von Berechnungen mit der ganzzahligen Division</i>, vol. 261. Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn, 2009.","apa":"Lürwer-Brüggemeier, K. (2009). <i>Mächtigkeit und Komplexität von Berechnungen mit der ganzzahligen Division</i> (Vol. 261). Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn.","mla":"Lürwer-Brüggemeier, Katharina. <i>Mächtigkeit Und Komplexität von Berechnungen Mit Der Ganzzahligen Division</i>. Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn, 2009."},"volume":261,"user_id":"5786","_id":"19605","publisher":"Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn","language":[{"iso":"eng"}],"series_title":"Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn","intvolume":"       261","date_updated":"2022-01-06T06:54:07Z","author":[{"full_name":"Lürwer-Brüggemeier, Katharina","first_name":"Katharina","last_name":"Lürwer-Brüggemeier"}],"year":"2009","status":"public","title":"Mächtigkeit und Komplexität von Berechnungen mit der ganzzahligen Division"},{"intvolume":"       260","date_updated":"2022-01-06T06:54:08Z","publication_identifier":{"isbn":["978-3-939350-79-8"]},"author":[{"last_name":"Mense","first_name":"Mario","full_name":"Mense, Mario"}],"title":"On Fault-Tolerant Data Placement in Storage Networks","status":"public","year":"2009","volume":260,"user_id":"5786","publisher":"Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn","_id":"19614","series_title":"Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn","language":[{"iso":"eng"}],"related_material":{"link":[{"url":"http://digital.ub.uni-paderborn.de/ubpb/urn/urn:nbn:de:hbz:466-20090206016","relation":"confirmation"}]},"supervisor":[{"id":"15523","full_name":"Meyer auf der Heide, Friedhelm","last_name":"Meyer auf der Heide","first_name":"Friedhelm"}],"citation":{"ama":"Mense M. <i>On Fault-Tolerant Data Placement in Storage Networks</i>. Vol 260. Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn; 2009.","bibtex":"@book{Mense_2009, series={Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn}, title={On Fault-Tolerant Data Placement in Storage Networks}, volume={260}, publisher={Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn}, author={Mense, Mario}, year={2009}, collection={Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn} }","mla":"Mense, Mario. <i>On Fault-Tolerant Data Placement in Storage Networks</i>. Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn, 2009.","chicago":"Mense, Mario. <i>On Fault-Tolerant Data Placement in Storage Networks</i>. Vol. 260. Verlagsschriftenreihe Des Heinz Nixdorf Instituts, Paderborn. Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn, 2009.","short":"M. Mense, On Fault-Tolerant Data Placement in Storage Networks, Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn, 2009.","apa":"Mense, M. (2009). <i>On Fault-Tolerant Data Placement in Storage Networks</i> (Vol. 260). Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn.","ieee":"M. Mense, <i>On Fault-Tolerant Data Placement in Storage Networks</i>, vol. 260. Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn, 2009."},"department":[{"_id":"63"},{"_id":"26"}],"type":"dissertation","date_created":"2020-09-22T08:05:15Z"},{"related_material":{"link":[{"url":"http://digital.ub.uni-paderborn.de/ubpb/urn/urn:nbn:de:hbz:466-20081218010","relation":"confirmation"}]},"citation":{"bibtex":"@book{Kortenjan_2009, series={Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn}, title={Size Equivalent Cluster Trees - Rendering CAD Models in Industrial Scenes}, volume={258}, publisher={Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn}, author={Kortenjan, Michael}, year={2009}, collection={Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn} }","ama":"Kortenjan M. <i>Size Equivalent Cluster Trees - Rendering CAD Models in Industrial Scenes</i>. Vol 258. Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn; 2009.","mla":"Kortenjan, Michael. <i>Size Equivalent Cluster Trees - Rendering CAD Models in Industrial Scenes</i>. Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn, 2009.","chicago":"Kortenjan, Michael. <i>Size Equivalent Cluster Trees - Rendering CAD Models in Industrial Scenes</i>. Vol. 258. Verlagsschriftenreihe Des Heinz Nixdorf Instituts, Paderborn. Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn, 2009.","short":"M. Kortenjan, Size Equivalent Cluster Trees - Rendering CAD Models in Industrial Scenes, Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn, 2009.","ieee":"M. Kortenjan, <i>Size Equivalent Cluster Trees - Rendering CAD Models in Industrial Scenes</i>, vol. 258. Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn, 2009.","apa":"Kortenjan, M. (2009). <i>Size Equivalent Cluster Trees - Rendering CAD Models in Industrial Scenes</i> (Vol. 258). Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn."},"supervisor":[{"id":"15523","full_name":"Meyer auf der Heide, Friedhelm","last_name":"Meyer auf der Heide","first_name":"Friedhelm"}],"type":"dissertation","department":[{"_id":"63"},{"_id":"26"}],"date_created":"2020-09-22T08:42:22Z","date_updated":"2022-01-06T06:54:08Z","intvolume":"       258","title":"Size Equivalent Cluster Trees - Rendering CAD Models in Industrial Scenes","status":"public","year":"2009","publication_identifier":{"isbn":["978-3-939350-77-4"]},"author":[{"full_name":"Kortenjan, Michael","first_name":"Michael","last_name":"Kortenjan"}],"user_id":"5786","volume":258,"_id":"19617","language":[{"iso":"eng"}],"series_title":"Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn","publisher":"Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn"},{"date_created":"2020-09-22T08:44:45Z","type":"dissertation","department":[{"_id":"63"},{"_id":"26"}],"supervisor":[{"full_name":"Meyer auf der Heide, Friedhelm","first_name":"Friedhelm","last_name":"Meyer auf der Heide","id":"15523"}],"citation":{"ieee":"O. 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