---
_id: '7988'
author:
- first_name: Wen
full_name: Lei, Wen
last_name: Lei
- first_name: Christian
full_name: Notthoff, Christian
last_name: Notthoff
- first_name: Jie
full_name: Peng, Jie
last_name: Peng
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas
full_name: Wieck, Andreas
last_name: Wieck
- first_name: Gabriel
full_name: Bester, Gabriel
last_name: Bester
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
citation:
ama: 'Lei W, Notthoff C, Peng J, et al. “Artificial Atoms” in Magnetic Fields: Wave-Function
Shaping and Phase-Sensitive Tunneling. Physical Review Letters. 2010;105(17).
doi:10.1103/physrevlett.105.176804'
apa: 'Lei, W., Notthoff, C., Peng, J., Reuter, D., Wieck, A., Bester, G., &
Lorke, A. (2010). “Artificial Atoms” in Magnetic Fields: Wave-Function Shaping
and Phase-Sensitive Tunneling. Physical Review Letters, 105(17).
https://doi.org/10.1103/physrevlett.105.176804'
bibtex: '@article{Lei_Notthoff_Peng_Reuter_Wieck_Bester_Lorke_2010, title={“Artificial
Atoms” in Magnetic Fields: Wave-Function Shaping and Phase-Sensitive Tunneling},
volume={105}, DOI={10.1103/physrevlett.105.176804},
number={17}, journal={Physical Review Letters}, publisher={American Physical Society
(APS)}, author={Lei, Wen and Notthoff, Christian and Peng, Jie and Reuter, Dirk
and Wieck, Andreas and Bester, Gabriel and Lorke, Axel}, year={2010} }'
chicago: 'Lei, Wen, Christian Notthoff, Jie Peng, Dirk Reuter, Andreas Wieck, Gabriel
Bester, and Axel Lorke. “‘Artificial Atoms’ in Magnetic Fields: Wave-Function
Shaping and Phase-Sensitive Tunneling.” Physical Review Letters 105, no.
17 (2010). https://doi.org/10.1103/physrevlett.105.176804.'
ieee: 'W. Lei et al., “‘Artificial Atoms’ in Magnetic Fields: Wave-Function
Shaping and Phase-Sensitive Tunneling,” Physical Review Letters, vol. 105,
no. 17, 2010.'
mla: 'Lei, Wen, et al. “‘Artificial Atoms’ in Magnetic Fields: Wave-Function Shaping
and Phase-Sensitive Tunneling.” Physical Review Letters, vol. 105, no.
17, American Physical Society (APS), 2010, doi:10.1103/physrevlett.105.176804.'
short: W. Lei, C. Notthoff, J. Peng, D. Reuter, A. Wieck, G. Bester, A. Lorke, Physical
Review Letters 105 (2010).
date_created: 2019-02-21T14:39:56Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevlett.105.176804
intvolume: ' 105'
issue: '17'
language:
- iso: eng
publication: Physical Review Letters
publication_identifier:
issn:
- 0031-9007
- 1079-7114
publication_status: published
publisher: American Physical Society (APS)
status: public
title: '“Artificial Atoms” in Magnetic Fields: Wave-Function Shaping and Phase-Sensitive
Tunneling'
type: journal_article
user_id: '42514'
volume: 105
year: '2010'
...
---
_id: '7989'
author:
- first_name: Christoph
full_name: Kreisbeck, Christoph
last_name: Kreisbeck
- first_name: Tobias
full_name: Kramer, Tobias
last_name: Kramer
- first_name: Sven S.
full_name: Buchholz, Sven S.
last_name: Buchholz
- first_name: Saskia F.
full_name: Fischer, Saskia F.
last_name: Fischer
- first_name: Ulrich
full_name: Kunze, Ulrich
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
citation:
ama: Kreisbeck C, Kramer T, Buchholz SS, et al. Phase shifts and phaseπjumps in
four-terminal waveguide Aharonov-Bohm interferometers. Physical Review B.
2010;82(16). doi:10.1103/physrevb.82.165329
apa: Kreisbeck, C., Kramer, T., Buchholz, S. S., Fischer, S. F., Kunze, U., Reuter,
D., & Wieck, A. D. (2010). Phase shifts and phaseπjumps in four-terminal waveguide
Aharonov-Bohm interferometers. Physical Review B, 82(16). https://doi.org/10.1103/physrevb.82.165329
bibtex: '@article{Kreisbeck_Kramer_Buchholz_Fischer_Kunze_Reuter_Wieck_2010, title={Phase
shifts and phaseπjumps in four-terminal waveguide Aharonov-Bohm interferometers},
volume={82}, DOI={10.1103/physrevb.82.165329},
number={16}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Kreisbeck, Christoph and Kramer, Tobias and Buchholz, Sven S.
and Fischer, Saskia F. and Kunze, Ulrich and Reuter, Dirk and Wieck, Andreas D.},
year={2010} }'
chicago: Kreisbeck, Christoph, Tobias Kramer, Sven S. Buchholz, Saskia F. Fischer,
Ulrich Kunze, Dirk Reuter, and Andreas D. Wieck. “Phase Shifts and Phaseπjumps
in Four-Terminal Waveguide Aharonov-Bohm Interferometers.” Physical Review
B 82, no. 16 (2010). https://doi.org/10.1103/physrevb.82.165329.
ieee: C. Kreisbeck et al., “Phase shifts and phaseπjumps in four-terminal
waveguide Aharonov-Bohm interferometers,” Physical Review B, vol. 82, no.
16, 2010.
mla: Kreisbeck, Christoph, et al. “Phase Shifts and Phaseπjumps in Four-Terminal
Waveguide Aharonov-Bohm Interferometers.” Physical Review B, vol. 82, no.
16, American Physical Society (APS), 2010, doi:10.1103/physrevb.82.165329.
short: C. Kreisbeck, T. Kramer, S.S. Buchholz, S.F. Fischer, U. Kunze, D. Reuter,
A.D. Wieck, Physical Review B 82 (2010).
date_created: 2019-02-21T14:40:35Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevb.82.165329
intvolume: ' 82'
issue: '16'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Phase shifts and phaseπjumps in four-terminal waveguide Aharonov-Bohm interferometers
type: journal_article
user_id: '42514'
volume: 82
year: '2010'
...
---
_id: '7990'
article_number: '143101'
author:
- first_name: M.
full_name: Mehta, M.
last_name: Mehta
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: S.
full_name: Michaelis de Vasconcellos, S.
last_name: Michaelis de Vasconcellos
- first_name: A.
full_name: Zrenner, A.
last_name: Zrenner
- first_name: C.
full_name: Meier, C.
last_name: Meier
citation:
ama: Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier
C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting
diode. Applied Physics Letters. 2010;97(14). doi:10.1063/1.3488812
apa: Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner,
A., & Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot
in a micron sized light emitting diode. Applied Physics Letters, 97(14).
https://doi.org/10.1063/1.3488812
bibtex: '@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010,
title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light
emitting diode}, volume={97}, DOI={10.1063/1.3488812},
number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos,
S. and Zrenner, A. and Meier, C.}, year={2010} }'
chicago: Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
and C. Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized
Light Emitting Diode.” Applied Physics Letters 97, no. 14 (2010). https://doi.org/10.1063/1.3488812.
ieee: M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized
light emitting diode,” Applied Physics Letters, vol. 97, no. 14, 2010.
mla: Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron
Sized Light Emitting Diode.” Applied Physics Letters, vol. 97, no. 14,
143101, AIP Publishing, 2010, doi:10.1063/1.3488812.
short: M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
C. Meier, Applied Physics Letters 97 (2010).
date_created: 2019-02-21T14:41:19Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3488812
intvolume: ' 97'
issue: '14'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting
diode
type: journal_article
user_id: '42514'
volume: 97
year: '2010'
...
---
_id: '7991'
article_number: '012043'
author:
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: R
full_name: Roescu, R
last_name: Roescu
- first_name: U
full_name: Zeitler, U
last_name: Zeitler
- first_name: J C
full_name: Maan, J C
last_name: Maan
- first_name: A D
full_name: Wieck, A D
last_name: Wieck
citation:
ama: 'Reuter D, Roescu R, Zeitler U, Maan JC, Wieck AD. Capacitance-voltage spectroscopy
on InAs quantum dot valence band states in tilted magnetic fields. Journal
of Physics: Conference Series. 2010;245. doi:10.1088/1742-6596/245/1/012043'
apa: 'Reuter, D., Roescu, R., Zeitler, U., Maan, J. C., & Wieck, A. D. (2010).
Capacitance-voltage spectroscopy on InAs quantum dot valence band states in tilted
magnetic fields. Journal of Physics: Conference Series, 245. https://doi.org/10.1088/1742-6596/245/1/012043'
bibtex: '@article{Reuter_Roescu_Zeitler_Maan_Wieck_2010, title={Capacitance-voltage
spectroscopy on InAs quantum dot valence band states in tilted magnetic fields},
volume={245}, DOI={10.1088/1742-6596/245/1/012043},
number={012043}, journal={Journal of Physics: Conference Series}, publisher={IOP
Publishing}, author={Reuter, Dirk and Roescu, R and Zeitler, U and Maan, J C and
Wieck, A D}, year={2010} }'
chicago: 'Reuter, Dirk, R Roescu, U Zeitler, J C Maan, and A D Wieck. “Capacitance-Voltage
Spectroscopy on InAs Quantum Dot Valence Band States in Tilted Magnetic Fields.”
Journal of Physics: Conference Series 245 (2010). https://doi.org/10.1088/1742-6596/245/1/012043.'
ieee: 'D. Reuter, R. Roescu, U. Zeitler, J. C. Maan, and A. D. Wieck, “Capacitance-voltage
spectroscopy on InAs quantum dot valence band states in tilted magnetic fields,”
Journal of Physics: Conference Series, vol. 245, 2010.'
mla: 'Reuter, Dirk, et al. “Capacitance-Voltage Spectroscopy on InAs Quantum Dot
Valence Band States in Tilted Magnetic Fields.” Journal of Physics: Conference
Series, vol. 245, 012043, IOP Publishing, 2010, doi:10.1088/1742-6596/245/1/012043.'
short: 'D. Reuter, R. Roescu, U. Zeitler, J.C. Maan, A.D. Wieck, Journal of Physics:
Conference Series 245 (2010).'
date_created: 2019-02-21T14:42:01Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/1742-6596/245/1/012043
intvolume: ' 245'
language:
- iso: eng
publication: 'Journal of Physics: Conference Series'
publication_identifier:
issn:
- 1742-6596
publication_status: published
publisher: IOP Publishing
status: public
title: Capacitance-voltage spectroscopy on InAs quantum dot valence band states in
tilted magnetic fields
type: journal_article
user_id: '42514'
volume: 245
year: '2010'
...
---
_id: '7992'
article_number: '113040'
author:
- first_name: P J
full_name: Rizo, P J
last_name: Rizo
- first_name: A
full_name: Pugzlys, A
last_name: Pugzlys
- first_name: A
full_name: Slachter, A
last_name: Slachter
- first_name: S Z
full_name: Denega, S Z
last_name: Denega
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A D
full_name: Wieck, A D
last_name: Wieck
- first_name: P H M
full_name: van Loosdrecht, P H M
last_name: van Loosdrecht
- first_name: C H
full_name: van der Wal, C H
last_name: van der Wal
citation:
ama: Rizo PJ, Pugzlys A, Slachter A, et al. Optical probing of spin dynamics of
two-dimensional and bulk electrons in a GaAs/AlGaAs heterojunction system. New
Journal of Physics. 2010;12(11). doi:10.1088/1367-2630/12/11/113040
apa: Rizo, P. J., Pugzlys, A., Slachter, A., Denega, S. Z., Reuter, D., Wieck, A.
D., … van der Wal, C. H. (2010). Optical probing of spin dynamics of two-dimensional
and bulk electrons in a GaAs/AlGaAs heterojunction system. New Journal of Physics,
12(11). https://doi.org/10.1088/1367-2630/12/11/113040
bibtex: '@article{Rizo_Pugzlys_Slachter_Denega_Reuter_Wieck_van Loosdrecht_van der
Wal_2010, title={Optical probing of spin dynamics of two-dimensional and bulk
electrons in a GaAs/AlGaAs heterojunction system}, volume={12}, DOI={10.1088/1367-2630/12/11/113040},
number={11113040}, journal={New Journal of Physics}, publisher={IOP Publishing},
author={Rizo, P J and Pugzlys, A and Slachter, A and Denega, S Z and Reuter, Dirk
and Wieck, A D and van Loosdrecht, P H M and van der Wal, C H}, year={2010} }'
chicago: Rizo, P J, A Pugzlys, A Slachter, S Z Denega, Dirk Reuter, A D Wieck, P
H M van Loosdrecht, and C H van der Wal. “Optical Probing of Spin Dynamics of
Two-Dimensional and Bulk Electrons in a GaAs/AlGaAs Heterojunction System.” New
Journal of Physics 12, no. 11 (2010). https://doi.org/10.1088/1367-2630/12/11/113040.
ieee: P. J. Rizo et al., “Optical probing of spin dynamics of two-dimensional
and bulk electrons in a GaAs/AlGaAs heterojunction system,” New Journal of
Physics, vol. 12, no. 11, 2010.
mla: Rizo, P. J., et al. “Optical Probing of Spin Dynamics of Two-Dimensional and
Bulk Electrons in a GaAs/AlGaAs Heterojunction System.” New Journal of Physics,
vol. 12, no. 11, 113040, IOP Publishing, 2010, doi:10.1088/1367-2630/12/11/113040.
short: P.J. Rizo, A. Pugzlys, A. Slachter, S.Z. Denega, D. Reuter, A.D. Wieck, P.H.M.
van Loosdrecht, C.H. van der Wal, New Journal of Physics 12 (2010).
date_created: 2019-02-21T14:42:45Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/1367-2630/12/11/113040
intvolume: ' 12'
issue: '11'
language:
- iso: eng
publication: New Journal of Physics
publication_identifier:
issn:
- 1367-2630
publication_status: published
publisher: IOP Publishing
status: public
title: Optical probing of spin dynamics of two-dimensional and bulk electrons in a
GaAs/AlGaAs heterojunction system
type: journal_article
user_id: '42514'
volume: 12
year: '2010'
...
---
_id: '809'
author:
- first_name: Georg
full_name: Birkenheuer, Georg
last_name: Birkenheuer
- first_name: Andre
full_name: Brinkmann, Andre
last_name: Brinkmann
- first_name: Holger
full_name: Karl, Holger
id: '126'
last_name: Karl
citation:
ama: 'Birkenheuer G, Brinkmann A, Karl H. Risk Aware Overbooking for Commercial
Grids. In: Job Scheduling Strategies for Parallel Processing - 15th International
Workshop, JSSPP 2010, Atlanta, GA, USA, April 23, 2010, Revised Selected Papers.
; 2010:51-76. doi:10.1007/978-3-642-16505-4_4'
apa: Birkenheuer, G., Brinkmann, A., & Karl, H. (2010). Risk Aware Overbooking
for Commercial Grids. In Job Scheduling Strategies for Parallel Processing
- 15th International Workshop, JSSPP 2010, Atlanta, GA, USA, April 23, 2010, Revised
Selected Papers (pp. 51–76). https://doi.org/10.1007/978-3-642-16505-4_4
bibtex: '@inproceedings{Birkenheuer_Brinkmann_Karl_2010, title={Risk Aware Overbooking
for Commercial Grids}, DOI={10.1007/978-3-642-16505-4_4},
booktitle={Job Scheduling Strategies for Parallel Processing - 15th International
Workshop, JSSPP 2010, Atlanta, GA, USA, April 23, 2010, Revised Selected Papers},
author={Birkenheuer, Georg and Brinkmann, Andre and Karl, Holger}, year={2010},
pages={51–76} }'
chicago: Birkenheuer, Georg, Andre Brinkmann, and Holger Karl. “Risk Aware Overbooking
for Commercial Grids.” In Job Scheduling Strategies for Parallel Processing
- 15th International Workshop, JSSPP 2010, Atlanta, GA, USA, April 23, 2010, Revised
Selected Papers, 51–76, 2010. https://doi.org/10.1007/978-3-642-16505-4_4.
ieee: G. Birkenheuer, A. Brinkmann, and H. Karl, “Risk Aware Overbooking for Commercial
Grids,” in Job Scheduling Strategies for Parallel Processing - 15th International
Workshop, JSSPP 2010, Atlanta, GA, USA, April 23, 2010, Revised Selected Papers,
2010, pp. 51–76.
mla: Birkenheuer, Georg, et al. “Risk Aware Overbooking for Commercial Grids.” Job
Scheduling Strategies for Parallel Processing - 15th International Workshop, JSSPP
2010, Atlanta, GA, USA, April 23, 2010, Revised Selected Papers, 2010, pp.
51–76, doi:10.1007/978-3-642-16505-4_4.
short: 'G. Birkenheuer, A. Brinkmann, H. Karl, in: Job Scheduling Strategies for
Parallel Processing - 15th International Workshop, JSSPP 2010, Atlanta, GA, USA,
April 23, 2010, Revised Selected Papers, 2010, pp. 51–76.'
date_created: 2017-11-27T10:22:26Z
date_updated: 2022-01-06T07:03:50Z
department:
- _id: '75'
- _id: '27'
doi: 10.1007/978-3-642-16505-4_4
page: 51-76
publication: Job Scheduling Strategies for Parallel Processing - 15th International
Workshop, JSSPP 2010, Atlanta, GA, USA, April 23, 2010, Revised Selected Papers
status: public
title: Risk Aware Overbooking for Commercial Grids
type: conference
user_id: '24135'
year: '2010'
...
---
_id: '4548'
abstract:
- lang: eng
text: "A fluorescence study of acetonitrile solutions of bis(tetramethylguanidine)propane,
copper(I)-iodide and [Cu(btmgp)I] was performed and the chemical reaction of the
latter species with O2 was investigated at room temperature. The actual quenching
process via O2 gassing was studied and an exponential dependence of the fluorescence
intensity with respect to the complex concentration was observed.\r\nFurthermore
the survey was deepened on time resolved fluorescence properties of solved [Cu(btmgp)I]
in a wider concentration range. The applicability of this complex for O2 sensing
inside a microreactor system was proven by confocal fluorescence measurements.
It was shown that the investigated system can be used for oxygen sensing in the
copper concentration range from 10−2 to 10−9 mol/l."
article_type: original
author:
- first_name: Sonja
full_name: Herres-Pawlis, Sonja
last_name: Herres-Pawlis
- first_name: Gerhard
full_name: Berth, Gerhard
id: '53'
last_name: Berth
- first_name: Volker
full_name: Wiedemeier, Volker
last_name: Wiedemeier
- first_name: Ludger
full_name: Schmidt, Ludger
last_name: Schmidt
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: Hans-Joachim
full_name: Warnecke, Hans-Joachim
last_name: Warnecke
citation:
ama: Herres-Pawlis S, Berth G, Wiedemeier V, Schmidt L, Zrenner A, Warnecke H-J.
Oxygen sensing by fluorescence quenching of [Cu(btmgp)I]. Journal of Luminescence.
2010;130(10):1958-1962. doi:10.1016/j.jlumin.2010.05.012
apa: Herres-Pawlis, S., Berth, G., Wiedemeier, V., Schmidt, L., Zrenner, A., &
Warnecke, H.-J. (2010). Oxygen sensing by fluorescence quenching of [Cu(btmgp)I].
Journal of Luminescence, 130(10), 1958–1962. https://doi.org/10.1016/j.jlumin.2010.05.012
bibtex: '@article{Herres-Pawlis_Berth_Wiedemeier_Schmidt_Zrenner_Warnecke_2010,
title={Oxygen sensing by fluorescence quenching of [Cu(btmgp)I]}, volume={130},
DOI={10.1016/j.jlumin.2010.05.012},
number={10}, journal={Journal of Luminescence}, publisher={Elsevier BV}, author={Herres-Pawlis,
Sonja and Berth, Gerhard and Wiedemeier, Volker and Schmidt, Ludger and Zrenner,
Artur and Warnecke, Hans-Joachim}, year={2010}, pages={1958–1962} }'
chicago: 'Herres-Pawlis, Sonja, Gerhard Berth, Volker Wiedemeier, Ludger Schmidt,
Artur Zrenner, and Hans-Joachim Warnecke. “Oxygen Sensing by Fluorescence Quenching
of [Cu(Btmgp)I].” Journal of Luminescence 130, no. 10 (2010): 1958–62.
https://doi.org/10.1016/j.jlumin.2010.05.012.'
ieee: S. Herres-Pawlis, G. Berth, V. Wiedemeier, L. Schmidt, A. Zrenner, and H.-J.
Warnecke, “Oxygen sensing by fluorescence quenching of [Cu(btmgp)I],” Journal
of Luminescence, vol. 130, no. 10, pp. 1958–1962, 2010.
mla: Herres-Pawlis, Sonja, et al. “Oxygen Sensing by Fluorescence Quenching of [Cu(Btmgp)I].”
Journal of Luminescence, vol. 130, no. 10, Elsevier BV, 2010, pp. 1958–62,
doi:10.1016/j.jlumin.2010.05.012.
short: S. Herres-Pawlis, G. Berth, V. Wiedemeier, L. Schmidt, A. Zrenner, H.-J.
Warnecke, Journal of Luminescence 130 (2010) 1958–1962.
date_created: 2018-09-20T12:31:16Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1016/j.jlumin.2010.05.012
intvolume: ' 130'
issue: '10'
keyword:
- Copper Oxygen Fluorescence quenching N donor ligands
language:
- iso: eng
page: 1958-1962
publication: Journal of Luminescence
publication_identifier:
issn:
- 0022-2313
publication_status: published
publisher: Elsevier BV
status: public
title: Oxygen sensing by fluorescence quenching of [Cu(btmgp)I]
type: journal_article
user_id: '49428'
volume: 130
year: '2010'
...
---
_id: '4549'
abstract:
- lang: eng
text: Damage caused by laser irradiation on the surface of ZnTe epilayers was studied
by micro-Raman and atomic force microscopy (AFM). ZnTe LO-phonon overtones up
to four order and TO + (n − 1)LO zone-center phonons were observed in the resonant
micro-Raman spectra at room temperature. Discrepancies in the literature regarding
the origin of two features observed at low frequencies around 120 and 140 cm−1
in the Raman spectrum of ZnTe are discussed and resolved. These Raman peaks were
not detected by using a low excitation laser power density on a Zn-terminated
ZnTe surface; however, with the increase of the laser power density they were
found to arise irreversibly. The correspondence of these peaks in a wave number
with the strongest Raman peaks of the crystalline tellurium phase and the intensity
enhancement behavior with the laser power in a similar way as for CdTe strongly
suggests the formation of crystalline tellurium aggregates on the layer surface
due to laser irradiation damage. AFM data reveal the occurrence of laser ablation
on the ZnTe surface even though the surface temperature of the sample is below
the melting point.
article_number: '075003'
article_type: original
author:
- first_name: E M
full_name: Larramendi, E M
last_name: Larramendi
- first_name: Gerhard
full_name: Berth, Gerhard
id: '53'
last_name: Berth
- first_name: V
full_name: Wiedemeier, V
last_name: Wiedemeier
- first_name: K-P
full_name: Hüsch, K-P
last_name: Hüsch
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: U
full_name: Woggon, U
last_name: Woggon
- first_name: E
full_name: Tschumak, E
last_name: Tschumak
- first_name: K
full_name: Lischka, K
last_name: Lischka
- first_name: D
full_name: Schikora, D
last_name: Schikora
citation:
ama: Larramendi EM, Berth G, Wiedemeier V, et al. Intensity enhancement of Te Raman
modes by laser damage in ZnTe epilayers. Semiconductor Science and Technology.
2010;25(7). doi:10.1088/0268-1242/25/7/075003
apa: Larramendi, E. M., Berth, G., Wiedemeier, V., Hüsch, K.-P., Zrenner, A., Woggon,
U., … Schikora, D. (2010). Intensity enhancement of Te Raman modes by laser damage
in ZnTe epilayers. Semiconductor Science and Technology, 25(7).
https://doi.org/10.1088/0268-1242/25/7/075003
bibtex: '@article{Larramendi_Berth_Wiedemeier_Hüsch_Zrenner_Woggon_Tschumak_Lischka_Schikora_2010,
title={Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers},
volume={25}, DOI={10.1088/0268-1242/25/7/075003},
number={7075003}, journal={Semiconductor Science and Technology}, publisher={IOP
Publishing}, author={Larramendi, E M and Berth, Gerhard and Wiedemeier, V and
Hüsch, K-P and Zrenner, Artur and Woggon, U and Tschumak, E and Lischka, K and
Schikora, D}, year={2010} }'
chicago: Larramendi, E M, Gerhard Berth, V Wiedemeier, K-P Hüsch, Artur Zrenner,
U Woggon, E Tschumak, K Lischka, and D Schikora. “Intensity Enhancement of Te
Raman Modes by Laser Damage in ZnTe Epilayers.” Semiconductor Science and Technology
25, no. 7 (2010). https://doi.org/10.1088/0268-1242/25/7/075003.
ieee: E. M. Larramendi et al., “Intensity enhancement of Te Raman modes by
laser damage in ZnTe epilayers,” Semiconductor Science and Technology,
vol. 25, no. 7, 2010.
mla: Larramendi, E. M., et al. “Intensity Enhancement of Te Raman Modes by Laser
Damage in ZnTe Epilayers.” Semiconductor Science and Technology, vol. 25,
no. 7, 075003, IOP Publishing, 2010, doi:10.1088/0268-1242/25/7/075003.
short: E.M. Larramendi, G. Berth, V. Wiedemeier, K.-P. Hüsch, A. Zrenner, U. Woggon,
E. Tschumak, K. Lischka, D. Schikora, Semiconductor Science and Technology 25
(2010).
date_created: 2018-09-20T12:35:35Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1088/0268-1242/25/7/075003
intvolume: ' 25'
issue: '7'
language:
- iso: eng
publication: Semiconductor Science and Technology
publication_identifier:
issn:
- 0268-1242
- 1361-6641
publication_status: published
publisher: IOP Publishing
status: public
title: Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers
type: journal_article
user_id: '49428'
volume: 25
year: '2010'
...
---
_id: '4550'
abstract:
- lang: eng
text: We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled
molecular beam epitaxial growth into the intrinsic region of a p-i-n junction
diode. This is achieved using an in situ combination of focused ion beam prepatterning,
annealing, and overgrowth, resulting in arrays of individually electrically addressable
(In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence
spectroscopy we demonstrate that these QDs have the same optical quality as optically
pumped Stranski–Krastanov QDs with random nucleation located in proximity to a
doped interface. The results suggest that this technique is scalable and highly
interesting for different applications in quantum devices.
article_number: '143101'
article_type: original
author:
- first_name: M.
full_name: Mehta, M.
last_name: Mehta
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: S.
full_name: Michaelis de Vasconcellos, S.
last_name: Michaelis de Vasconcellos
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier
C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting
diode. Applied Physics Letters. 2010;97(14). doi:10.1063/1.3488812
apa: Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner,
A., & Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot
in a micron sized light emitting diode. Applied Physics Letters, 97(14).
https://doi.org/10.1063/1.3488812
bibtex: '@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010,
title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light
emitting diode}, volume={97}, DOI={10.1063/1.3488812},
number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos,
S. and Zrenner, Artur and Meier, Cedrik}, year={2010} }'
chicago: Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, Artur
Zrenner, and Cedrik Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot
in a Micron Sized Light Emitting Diode.” Applied Physics Letters 97, no.
14 (2010). https://doi.org/10.1063/1.3488812.
ieee: M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized
light emitting diode,” Applied Physics Letters, vol. 97, no. 14, 2010.
mla: Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron
Sized Light Emitting Diode.” Applied Physics Letters, vol. 97, no. 14,
143101, AIP Publishing, 2010, doi:10.1063/1.3488812.
short: M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
C. Meier, Applied Physics Letters 97 (2010).
date_created: 2018-09-20T12:38:51Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '287'
doi: 10.1063/1.3488812
intvolume: ' 97'
issue: '14'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting
diode
type: journal_article
user_id: '20798'
volume: 97
year: '2010'
...
---
_id: '4551'
abstract:
- lang: eng
text: An intentional positioning of optically active quantum dots using site-selective
growth by a combination of molecular beam epitaxy (MBE) and focused ion beam (FIB)
implantation in an all-ultra-high-vacuum (UHV) setup has been successfully demonstrated.
A square array of periodic holes on GaAs substrate was fabricated with FIB of
30 keV ions followed by an in situ annealing step. Subsequently, the patterned
holes were overgrown with an optimized amount of InAs in order to achieve site-selective
growth of the QDs on the patterned holes. Under well-optimized conditions, a selectivity
of single quantum dot growth in the patterned holes of 52% was achieved. Thereafter,
carrier injection and subsequent radiative recombination from the positioned InAs/GaAs
self-assembled QDs was investigated by embedding the QDs in the intrinsic part
of a GaAs-based p–i–n junction device. Electroluminescence spectra taken at 77
K show interband transitions up to the fifth excited state from the QDs.
article_type: original
author:
- first_name: Minisha
full_name: Mehta, Minisha
last_name: Mehta
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Alexander
full_name: Melnikov, Alexander
last_name: Melnikov
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Steffen
full_name: Michaelis de Vasconcellos, Steffen
last_name: Michaelis de Vasconcellos
- first_name: Tim
full_name: Baumgarten, Tim
last_name: Baumgarten
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: 'Mehta M, Reuter D, Melnikov A, et al. Intentionally positioned self-assembled
InAs quantum dots in an electroluminescent p–i–n junction diode. Physica E:
Low-dimensional Systems and Nanostructures. 2010;42(10):2749-2752. doi:10.1016/j.physe.2009.12.053'
apa: 'Mehta, M., Reuter, D., Melnikov, A., Wieck, A. D., Michaelis de Vasconcellos,
S., Baumgarten, T., … Meier, C. (2010). Intentionally positioned self-assembled
InAs quantum dots in an electroluminescent p–i–n junction diode. Physica E:
Low-Dimensional Systems and Nanostructures, 42(10), 2749–2752. https://doi.org/10.1016/j.physe.2009.12.053'
bibtex: '@article{Mehta_Reuter_Melnikov_Wieck_Michaelis de Vasconcellos_Baumgarten_Zrenner_Meier_2010,
title={Intentionally positioned self-assembled InAs quantum dots in an electroluminescent
p–i–n junction diode}, volume={42}, DOI={10.1016/j.physe.2009.12.053},
number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures},
publisher={Elsevier BV}, author={Mehta, Minisha and Reuter, Dirk and Melnikov,
Alexander and Wieck, Andreas D. and Michaelis de Vasconcellos, Steffen and Baumgarten,
Tim and Zrenner, Artur and Meier, Cedrik}, year={2010}, pages={2749–2752} }'
chicago: 'Mehta, Minisha, Dirk Reuter, Alexander Melnikov, Andreas D. Wieck, Steffen
Michaelis de Vasconcellos, Tim Baumgarten, Artur Zrenner, and Cedrik Meier. “Intentionally
Positioned Self-Assembled InAs Quantum Dots in an Electroluminescent p–i–n Junction
Diode.” Physica E: Low-Dimensional Systems and Nanostructures 42, no. 10
(2010): 2749–52. https://doi.org/10.1016/j.physe.2009.12.053.'
ieee: 'M. Mehta et al., “Intentionally positioned self-assembled InAs quantum
dots in an electroluminescent p–i–n junction diode,” Physica E: Low-dimensional
Systems and Nanostructures, vol. 42, no. 10, pp. 2749–2752, 2010.'
mla: 'Mehta, Minisha, et al. “Intentionally Positioned Self-Assembled InAs Quantum
Dots in an Electroluminescent p–i–n Junction Diode.” Physica E: Low-Dimensional
Systems and Nanostructures, vol. 42, no. 10, Elsevier BV, 2010, pp. 2749–52,
doi:10.1016/j.physe.2009.12.053.'
short: 'M. Mehta, D. Reuter, A. Melnikov, A.D. Wieck, S. Michaelis de Vasconcellos,
T. Baumgarten, A. Zrenner, C. Meier, Physica E: Low-Dimensional Systems and Nanostructures
42 (2010) 2749–2752.'
date_created: 2018-09-20T12:42:40Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '287'
doi: 10.1016/j.physe.2009.12.053
intvolume: ' 42'
issue: '10'
keyword:
- Molecular beam epitaxy
- Focused ion beam
- Self-assembled quantum dot
- Electroluminescence
language:
- iso: eng
page: 2749-2752
publication: 'Physica E: Low-dimensional Systems and Nanostructures'
publication_identifier:
issn:
- 1386-9477
publication_status: published
publisher: Elsevier BV
status: public
title: Intentionally positioned self-assembled InAs quantum dots in an electroluminescent
p–i–n junction diode
type: journal_article
user_id: '20798'
volume: 42
year: '2010'
...
---
_id: '4552'
abstract:
- lang: eng
text: Here we report on investigations on CdSe quantum dots incorporated in ZnSe
based Schottky photodiodes with near-field shadow masks. Photoluminescence and
photocurrent of individual quantum dots were studied as a function of the applied
bias voltage. The exciton energy of the quantum dot ground state transition was
shifted to the excitation energy by using the Stark effect tuning via an external
bias voltage. Under the condition of resonance with the laser excitation energy
we observed a resonant photocurrent signal due to the tunnelling of carriers out
of the quantum dots at electric fields above 500 kV/cm.
article_type: original
author:
- first_name: M.
full_name: Panfilova, M.
last_name: Panfilova
- first_name: S.
full_name: Michaelis de Vasconcellos, S.
last_name: Michaelis de Vasconcellos
- first_name: A.
full_name: Pawlis, A.
last_name: Pawlis
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
citation:
ama: 'Panfilova M, Michaelis de Vasconcellos S, Pawlis A, Lischka K, Zrenner A.
Resonant photocurrent-spectroscopy of individual CdSe quantum dots. Physica
E: Low-dimensional Systems and Nanostructures. 2010;42(10):2521-2523. doi:10.1016/j.physe.2010.01.013'
apa: 'Panfilova, M., Michaelis de Vasconcellos, S., Pawlis, A., Lischka, K., &
Zrenner, A. (2010). Resonant photocurrent-spectroscopy of individual CdSe quantum
dots. Physica E: Low-Dimensional Systems and Nanostructures, 42(10),
2521–2523. https://doi.org/10.1016/j.physe.2010.01.013'
bibtex: '@article{Panfilova_Michaelis de Vasconcellos_Pawlis_Lischka_Zrenner_2010,
title={Resonant photocurrent-spectroscopy of individual CdSe quantum dots}, volume={42},
DOI={10.1016/j.physe.2010.01.013},
number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures},
publisher={Elsevier BV}, author={Panfilova, M. and Michaelis de Vasconcellos,
S. and Pawlis, A. and Lischka, K. and Zrenner, Artur}, year={2010}, pages={2521–2523}
}'
chicago: 'Panfilova, M., S. Michaelis de Vasconcellos, A. Pawlis, K. Lischka, and
Artur Zrenner. “Resonant Photocurrent-Spectroscopy of Individual CdSe Quantum
Dots.” Physica E: Low-Dimensional Systems and Nanostructures 42, no. 10
(2010): 2521–23. https://doi.org/10.1016/j.physe.2010.01.013.'
ieee: 'M. Panfilova, S. Michaelis de Vasconcellos, A. Pawlis, K. Lischka, and A.
Zrenner, “Resonant photocurrent-spectroscopy of individual CdSe quantum dots,”
Physica E: Low-dimensional Systems and Nanostructures, vol. 42, no. 10,
pp. 2521–2523, 2010.'
mla: 'Panfilova, M., et al. “Resonant Photocurrent-Spectroscopy of Individual CdSe
Quantum Dots.” Physica E: Low-Dimensional Systems and Nanostructures, vol.
42, no. 10, Elsevier BV, 2010, pp. 2521–23, doi:10.1016/j.physe.2010.01.013.'
short: 'M. Panfilova, S. Michaelis de Vasconcellos, A. Pawlis, K. Lischka, A. Zrenner,
Physica E: Low-Dimensional Systems and Nanostructures 42 (2010) 2521–2523.'
date_created: 2018-09-20T12:45:46Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1016/j.physe.2010.01.013
intvolume: ' 42'
issue: '10'
keyword:
- CdSe/ZnSe quantum dots
- Photodiode
- Quantum confined Stark Effect
- Photocurrent
- II–VI Semiconductors
language:
- iso: eng
page: 2521-2523
publication: 'Physica E: Low-dimensional Systems and Nanostructures'
publication_identifier:
issn:
- 1386-9477
publication_status: published
publisher: Elsevier BV
status: public
title: Resonant photocurrent-spectroscopy of individual CdSe quantum dots
type: journal_article
user_id: '49428'
volume: 42
year: '2010'
...
---
_id: '7251'
author:
- first_name: Atsushi
full_name: Ishikawa, Atsushi
last_name: Ishikawa
- first_name: Rupert F.
full_name: Oulton, Rupert F.
last_name: Oulton
- first_name: Thomas
full_name: Zentgraf, Thomas
id: '30525'
last_name: Zentgraf
orcid: 0000-0002-8662-1101
- first_name: Xiang
full_name: Zhang, Xiang
last_name: Zhang
citation:
ama: 'Ishikawa A, Oulton RF, Zentgraf T, Zhang X. Extremely low-loss slow-light
modes in plasmonic dielectric hybrid systems. In: Stockman MI, ed. Plasmonics:
Metallic Nanostructures and Their Optical Properties VIII. SPIE; 2010. doi:10.1117/12.860190'
apa: 'Ishikawa, A., Oulton, R. F., Zentgraf, T., & Zhang, X. (2010). Extremely
low-loss slow-light modes in plasmonic dielectric hybrid systems. In M. I. Stockman
(Ed.), Plasmonics: Metallic Nanostructures and Their Optical Properties VIII.
SPIE. https://doi.org/10.1117/12.860190'
bibtex: '@inproceedings{Ishikawa_Oulton_Zentgraf_Zhang_2010, title={Extremely low-loss
slow-light modes in plasmonic dielectric hybrid systems}, DOI={10.1117/12.860190},
booktitle={Plasmonics: Metallic Nanostructures and Their Optical Properties VIII},
publisher={SPIE}, author={Ishikawa, Atsushi and Oulton, Rupert F. and Zentgraf,
Thomas and Zhang, Xiang}, editor={Stockman, Mark I.Editor}, year={2010} }'
chicago: 'Ishikawa, Atsushi, Rupert F. Oulton, Thomas Zentgraf, and Xiang Zhang.
“Extremely Low-Loss Slow-Light Modes in Plasmonic Dielectric Hybrid Systems.”
In Plasmonics: Metallic Nanostructures and Their Optical Properties VIII,
edited by Mark I. Stockman. SPIE, 2010. https://doi.org/10.1117/12.860190.'
ieee: 'A. Ishikawa, R. F. Oulton, T. Zentgraf, and X. Zhang, “Extremely low-loss
slow-light modes in plasmonic dielectric hybrid systems,” in Plasmonics: Metallic
Nanostructures and Their Optical Properties VIII, 2010.'
mla: 'Ishikawa, Atsushi, et al. “Extremely Low-Loss Slow-Light Modes in Plasmonic
Dielectric Hybrid Systems.” Plasmonics: Metallic Nanostructures and Their Optical
Properties VIII, edited by Mark I. Stockman, SPIE, 2010, doi:10.1117/12.860190.'
short: 'A. Ishikawa, R.F. Oulton, T. Zentgraf, X. Zhang, in: M.I. Stockman (Ed.),
Plasmonics: Metallic Nanostructures and Their Optical Properties VIII, SPIE, 2010.'
date_created: 2019-01-30T07:22:54Z
date_updated: 2022-01-06T07:03:30Z
department:
- _id: '15'
- _id: '230'
doi: 10.1117/12.860190
editor:
- first_name: Mark I.
full_name: Stockman, Mark I.
last_name: Stockman
language:
- iso: eng
publication: 'Plasmonics: Metallic Nanostructures and Their Optical Properties VIII'
publication_status: published
publisher: SPIE
status: public
title: Extremely low-loss slow-light modes in plasmonic dielectric hybrid systems
type: conference
user_id: '30525'
year: '2010'
...
---
_id: '7252'
author:
- first_name: Volker J.
full_name: Sorger, Volker J.
last_name: Sorger
- first_name: Rupert F.
full_name: Oulton, Rupert F.
last_name: Oulton
- first_name: Thomas
full_name: Zentgraf, Thomas
id: '30525'
last_name: Zentgraf
orcid: 0000-0002-8662-1101
- first_name: Renmin
full_name: Ma, Renmin
last_name: Ma
- first_name: Christopher
full_name: Gladden, Christopher
last_name: Gladden
- first_name: Lun
full_name: Dai, Lun
last_name: Dai
- first_name: Guy
full_name: Bartal, Guy
last_name: Bartal
- first_name: Xiang
full_name: Zhang, Xiang
last_name: Zhang
citation:
ama: 'Sorger VJ, Oulton RF, Zentgraf T, et al. Semiconductor plasmon laser. In:
Stockman MI, ed. Plasmonics: Metallic Nanostructures and Their Optical Properties
VIII. SPIE; 2010. doi:10.1117/12.859136'
apa: 'Sorger, V. J., Oulton, R. F., Zentgraf, T., Ma, R., Gladden, C., Dai, L.,
… Zhang, X. (2010). Semiconductor plasmon laser. In M. I. Stockman (Ed.), Plasmonics:
Metallic Nanostructures and Their Optical Properties VIII. SPIE. https://doi.org/10.1117/12.859136'
bibtex: '@inproceedings{Sorger_Oulton_Zentgraf_Ma_Gladden_Dai_Bartal_Zhang_2010,
title={Semiconductor plasmon laser}, DOI={10.1117/12.859136},
booktitle={Plasmonics: Metallic Nanostructures and Their Optical Properties VIII},
publisher={SPIE}, author={Sorger, Volker J. and Oulton, Rupert F. and Zentgraf,
Thomas and Ma, Renmin and Gladden, Christopher and Dai, Lun and Bartal, Guy and
Zhang, Xiang}, editor={Stockman, Mark I.Editor}, year={2010} }'
chicago: 'Sorger, Volker J., Rupert F. Oulton, Thomas Zentgraf, Renmin Ma, Christopher
Gladden, Lun Dai, Guy Bartal, and Xiang Zhang. “Semiconductor Plasmon Laser.”
In Plasmonics: Metallic Nanostructures and Their Optical Properties VIII,
edited by Mark I. Stockman. SPIE, 2010. https://doi.org/10.1117/12.859136.'
ieee: 'V. J. Sorger et al., “Semiconductor plasmon laser,” in Plasmonics:
Metallic Nanostructures and Their Optical Properties VIII, 2010.'
mla: 'Sorger, Volker J., et al. “Semiconductor Plasmon Laser.” Plasmonics: Metallic
Nanostructures and Their Optical Properties VIII, edited by Mark I. Stockman,
SPIE, 2010, doi:10.1117/12.859136.'
short: 'V.J. Sorger, R.F. Oulton, T. Zentgraf, R. Ma, C. Gladden, L. Dai, G. Bartal,
X. Zhang, in: M.I. Stockman (Ed.), Plasmonics: Metallic Nanostructures and Their
Optical Properties VIII, SPIE, 2010.'
date_created: 2019-01-30T07:24:06Z
date_updated: 2022-01-06T07:03:30Z
department:
- _id: '15'
- _id: '230'
doi: 10.1117/12.859136
editor:
- first_name: Mark I.
full_name: Stockman, Mark I.
last_name: Stockman
language:
- iso: eng
publication: 'Plasmonics: Metallic Nanostructures and Their Optical Properties VIII'
publication_status: published
publisher: SPIE
status: public
title: Semiconductor plasmon laser
type: conference
user_id: '30525'
year: '2010'
...
---
_id: '7494'
article_number: H119
author:
- first_name: M.
full_name: Mehta, M.
last_name: Mehta
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Mehta M, Meier C. Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single
Crystals. Journal of The Electrochemical Society. 2010;158(2). doi:10.1149/1.3519999
apa: Mehta, M., & Meier, C. (2010). Controlled Etching Behavior of O-Polar and
Zn-Polar ZnO Single Crystals. Journal of The Electrochemical Society, 158(2).
https://doi.org/10.1149/1.3519999
bibtex: '@article{Mehta_Meier_2010, title={Controlled Etching Behavior of O-Polar
and Zn-Polar ZnO Single Crystals}, volume={158}, DOI={10.1149/1.3519999},
number={2H119}, journal={Journal of The Electrochemical Society}, publisher={The
Electrochemical Society}, author={Mehta, M. and Meier, Cedrik}, year={2010} }'
chicago: Mehta, M., and Cedrik Meier. “Controlled Etching Behavior of O-Polar and
Zn-Polar ZnO Single Crystals.” Journal of The Electrochemical Society 158,
no. 2 (2010). https://doi.org/10.1149/1.3519999.
ieee: M. Mehta and C. Meier, “Controlled Etching Behavior of O-Polar and Zn-Polar
ZnO Single Crystals,” Journal of The Electrochemical Society, vol. 158,
no. 2, 2010.
mla: Mehta, M., and Cedrik Meier. “Controlled Etching Behavior of O-Polar and Zn-Polar
ZnO Single Crystals.” Journal of The Electrochemical Society, vol. 158,
no. 2, H119, The Electrochemical Society, 2010, doi:10.1149/1.3519999.
short: M. Mehta, C. Meier, Journal of The Electrochemical Society 158 (2010).
date_created: 2019-02-04T14:35:22Z
date_updated: 2022-01-06T07:03:39Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '287'
doi: 10.1149/1.3519999
intvolume: ' 158'
issue: '2'
language:
- iso: eng
publication: Journal of The Electrochemical Society
publication_identifier:
issn:
- 0013-4651
publication_status: published
publisher: The Electrochemical Society
status: public
title: Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals
type: journal_article
user_id: '20798'
volume: 158
year: '2010'
...
---
_id: '7496'
article_number: '455201'
author:
- first_name: Jens
full_name: Theis, Jens
last_name: Theis
- first_name: Martin
full_name: Geller, Martin
last_name: Geller
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
- first_name: Hartmut
full_name: Wiggers, Hartmut
last_name: Wiggers
- first_name: Andreas
full_name: Wieck, Andreas
last_name: Wieck
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Theis J, Geller M, Lorke A, Wiggers H, Wieck A, Meier C. Electroluminescence
from silicon nanoparticles fabricated from the gas phase. Nanotechnology.
2010;21(45). doi:10.1088/0957-4484/21/45/455201
apa: Theis, J., Geller, M., Lorke, A., Wiggers, H., Wieck, A., & Meier, C. (2010).
Electroluminescence from silicon nanoparticles fabricated from the gas phase.
Nanotechnology, 21(45). https://doi.org/10.1088/0957-4484/21/45/455201
bibtex: '@article{Theis_Geller_Lorke_Wiggers_Wieck_Meier_2010, title={Electroluminescence
from silicon nanoparticles fabricated from the gas phase}, volume={21}, DOI={10.1088/0957-4484/21/45/455201},
number={45455201}, journal={Nanotechnology}, publisher={IOP Publishing}, author={Theis,
Jens and Geller, Martin and Lorke, Axel and Wiggers, Hartmut and Wieck, Andreas
and Meier, Cedrik}, year={2010} }'
chicago: Theis, Jens, Martin Geller, Axel Lorke, Hartmut Wiggers, Andreas Wieck,
and Cedrik Meier. “Electroluminescence from Silicon Nanoparticles Fabricated from
the Gas Phase.” Nanotechnology 21, no. 45 (2010). https://doi.org/10.1088/0957-4484/21/45/455201.
ieee: J. Theis, M. Geller, A. Lorke, H. Wiggers, A. Wieck, and C. Meier, “Electroluminescence
from silicon nanoparticles fabricated from the gas phase,” Nanotechnology,
vol. 21, no. 45, 2010.
mla: Theis, Jens, et al. “Electroluminescence from Silicon Nanoparticles Fabricated
from the Gas Phase.” Nanotechnology, vol. 21, no. 45, 455201, IOP Publishing,
2010, doi:10.1088/0957-4484/21/45/455201.
short: J. Theis, M. Geller, A. Lorke, H. Wiggers, A. Wieck, C. Meier, Nanotechnology
21 (2010).
date_created: 2019-02-04T14:39:19Z
date_updated: 2022-01-06T07:03:39Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '287'
doi: 10.1088/0957-4484/21/45/455201
intvolume: ' 21'
issue: '45'
language:
- iso: eng
publication: Nanotechnology
publication_identifier:
issn:
- 0957-4484
- 1361-6528
publication_status: published
publisher: IOP Publishing
status: public
title: Electroluminescence from silicon nanoparticles fabricated from the gas phase
type: journal_article
user_id: '20798'
volume: 21
year: '2010'
...
---
_id: '4153'
abstract:
- lang: eng
text: Nanosphere lithography (NSL) masks consisting of mono- or double-layers of
polystyrene (PS) nano-beads are fabricated on silicon exploiting the self-organization
of PS particles during the controlled drying of a colloidal suspension on a surface.
The shape changes and shrinkage of PS sphere masks upon treatment in an air plasma
are studied as a function of initial sphere size, plasma power and treatment time.
The influence of several experimental parameters, including the plasma induced
temperature rise, are analysed using scanning and transmission electron microscopy.
It is demonstrated that a variety of new intriguing nanopatterns can be generated
on silicon surfaces by the combination of NSL and plasma techniques, largely broadening
the variety of patterns available so far by NSL.
article_type: original
author:
- first_name: D.
full_name: Gogel, D.
last_name: Gogel
- first_name: M.
full_name: Weinl, M.
last_name: Weinl
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: B.
full_name: Stritzker, B.
last_name: Stritzker
citation:
ama: Gogel D, Weinl M, Lindner J, Stritzker B. Plasma modification of nanosphere
lithography masks made of polystyrene beads. JOURNAL OF OPTOELECTRONICS AND
ADVANCED MATERIALS. 2010;12(3):740-744.
apa: Gogel, D., Weinl, M., Lindner, J., & Stritzker, B. (2010). Plasma modification
of nanosphere lithography masks made of polystyrene beads. JOURNAL OF OPTOELECTRONICS
AND ADVANCED MATERIALS, 12(3), 740–744.
bibtex: '@article{Gogel_Weinl_Lindner_Stritzker_2010, title={Plasma modification
of nanosphere lithography masks made of polystyrene beads}, volume={12}, number={3},
journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS}, author={Gogel, D.
and Weinl, M. and Lindner, Jörg and Stritzker, B.}, year={2010}, pages={740–744}
}'
chicago: 'Gogel, D., M. Weinl, Jörg Lindner, and B. Stritzker. “Plasma Modification
of Nanosphere Lithography Masks Made of Polystyrene Beads.” JOURNAL OF OPTOELECTRONICS
AND ADVANCED MATERIALS 12, no. 3 (2010): 740–44.'
ieee: D. Gogel, M. Weinl, J. Lindner, and B. Stritzker, “Plasma modification of
nanosphere lithography masks made of polystyrene beads,” JOURNAL OF OPTOELECTRONICS
AND ADVANCED MATERIALS, vol. 12, no. 3, pp. 740–744, 2010.
mla: Gogel, D., et al. “Plasma Modification of Nanosphere Lithography Masks Made
of Polystyrene Beads.” JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS,
vol. 12, no. 3, 2010, pp. 740–44.
short: D. Gogel, M. Weinl, J. Lindner, B. Stritzker, JOURNAL OF OPTOELECTRONICS
AND ADVANCED MATERIALS 12 (2010) 740–744.
date_created: 2018-08-27T13:29:28Z
date_updated: 2022-01-06T07:00:26Z
department:
- _id: '286'
- _id: '230'
intvolume: ' 12'
issue: '3'
language:
- iso: eng
page: 740-744
publication: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
status: public
title: Plasma modification of nanosphere lithography masks made of polystyrene beads
type: journal_article
user_id: '55706'
volume: 12
year: '2010'
...
---
_id: '6619'
abstract:
- lang: ger
text: Strömungsbasierte Mischprozesse sind grundlegender Bestandteil vieler chemischer
Prozesse. Realisierbare Mischzeiten reichen von einigen Millisekunden bis zu Sekunden,
wobei die vollständige Homogenisierung oft nicht sichergestellt ist. Werden kinetische
Parameter chemischer Reaktionen dieses Zeitskalenbereichs ohne Berücksichtigung
der Mischprozesse bestimmt, sind sie mischungsmaskiert und geben die inhärente
chemische Kinetik nicht wieder. In dieser Arbeit wird die Validierung und Anwendung
einer Methode zur Bestimmung inhärenter chemischer Kinetiken von in Flüssigphase
ablaufenden chemischen Reaktionen im stationären, laminaren Flachbettmikroreaktor
vorgestellt. Der verfolgte Ansatz basiert auf der mechanistischen Modellierung
der Molmengen unter Berücksichtigung von Konvektion, Diffusion und Reaktion und
der Bestimmung der unbekannten Parameter durch Anpassung des Modells an experimentell
ermittelte Konzentrationsverläufe.
article_type: original
author:
- first_name: H.-J.
full_name: Warnecke, H.-J.
last_name: Warnecke
- first_name: D.
full_name: Bothe, D.
last_name: Bothe
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: Gerhard
full_name: Berth, Gerhard
id: '53'
last_name: Berth
- first_name: K.-P.
full_name: Hüsch, K.-P.
last_name: Hüsch
citation:
ama: Warnecke H-J, Bothe D, Zrenner A, Berth G, Hüsch K-P. Modellbasierte Bestimmung
lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*.
Chemie Ingenieur Technik. 2010;82(3):251-258. doi:10.1002/cite.200900169
apa: Warnecke, H.-J., Bothe, D., Zrenner, A., Berth, G., & Hüsch, K.-P. (2010).
Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase
mittels Flachbettmikroreaktor*. Chemie Ingenieur Technik, 82(3),
251–258. https://doi.org/10.1002/cite.200900169
bibtex: '@article{Warnecke_Bothe_Zrenner_Berth_Hüsch_2010, title={Modellbasierte
Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels
Flachbettmikroreaktor*}, volume={82}, DOI={10.1002/cite.200900169},
number={3}, journal={Chemie Ingenieur Technik}, publisher={Wiley}, author={Warnecke,
H.-J. and Bothe, D. and Zrenner, Artur and Berth, Gerhard and Hüsch, K.-P.}, year={2010},
pages={251–258} }'
chicago: 'Warnecke, H.-J., D. Bothe, Artur Zrenner, Gerhard Berth, and K.-P. Hüsch.
“Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase
mittels Flachbettmikroreaktor*.” Chemie Ingenieur Technik 82, no. 3 (2010):
251–58. https://doi.org/10.1002/cite.200900169.'
ieee: H.-J. Warnecke, D. Bothe, A. Zrenner, G. Berth, and K.-P. Hüsch, “Modellbasierte
Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels
Flachbettmikroreaktor*,” Chemie Ingenieur Technik, vol. 82, no. 3, pp.
251–258, 2010.
mla: Warnecke, H. J., et al. “Modellbasierte Bestimmung lokal gültiger Kinetiken
chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*.” Chemie
Ingenieur Technik, vol. 82, no. 3, Wiley, 2010, pp. 251–58, doi:10.1002/cite.200900169.
short: H.-J. Warnecke, D. Bothe, A. Zrenner, G. Berth, K.-P. Hüsch, Chemie Ingenieur
Technik 82 (2010) 251–258.
date_created: 2019-01-10T10:13:09Z
date_updated: 2022-01-06T07:03:13Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1002/cite.200900169
intvolume: ' 82'
issue: '3'
language:
- iso: ger
page: 251-258
publication: Chemie Ingenieur Technik
publication_identifier:
issn:
- 0009-286X
- 1522-2640
publication_status: published
publisher: Wiley
status: public
title: Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in
Flüssigphase mittels Flachbettmikroreaktor*
type: journal_article
user_id: '49428'
volume: 82
year: '2010'
...
---
_id: '12943'
author:
- first_name: Daniel
full_name: Röwenstrunk, Daniel
id: '439'
last_name: Röwenstrunk
orcid: https://orcid.org/0000-0001-6271-2095
citation:
ama: 'Röwenstrunk D. Die digitale Edition von Webers Klarinettenquintett – Ein Vergleich
der Edirom-Versionen 2004 und 2008. In: Stadler P, Veit J, eds. Digitale Edition
Zwischen Experiment Und Standardisierung. Berlin, New York; 2010. doi:10.1515/9783110231144.61'
apa: Röwenstrunk, D. (2010). Die digitale Edition von Webers Klarinettenquintett
– Ein Vergleich der Edirom-Versionen 2004 und 2008. In P. Stadler & J. Veit
(Eds.), Digitale Edition zwischen Experiment und Standardisierung. Berlin,
New York. https://doi.org/10.1515/9783110231144.61
bibtex: '@inbook{Röwenstrunk_2010, place={Berlin, New York}, title={Die digitale
Edition von Webers Klarinettenquintett – Ein Vergleich der Edirom-Versionen 2004
und 2008}, DOI={10.1515/9783110231144.61},
booktitle={Digitale Edition zwischen Experiment und Standardisierung}, author={Röwenstrunk,
Daniel}, editor={Stadler, Peter and Veit, JoachimEditors}, year={2010} }'
chicago: Röwenstrunk, Daniel. “Die Digitale Edition von Webers Klarinettenquintett
– Ein Vergleich Der Edirom-Versionen 2004 Und 2008.” In Digitale Edition Zwischen
Experiment Und Standardisierung, edited by Peter Stadler and Joachim Veit.
Berlin, New York, 2010. https://doi.org/10.1515/9783110231144.61.
ieee: D. Röwenstrunk, “Die digitale Edition von Webers Klarinettenquintett – Ein
Vergleich der Edirom-Versionen 2004 und 2008,” in Digitale Edition zwischen
Experiment und Standardisierung, P. Stadler and J. Veit, Eds. Berlin, New
York, 2010.
mla: Röwenstrunk, Daniel. “Die Digitale Edition von Webers Klarinettenquintett –
Ein Vergleich Der Edirom-Versionen 2004 Und 2008.” Digitale Edition Zwischen
Experiment Und Standardisierung, edited by Peter Stadler and Joachim Veit,
2010, doi:10.1515/9783110231144.61.
short: 'D. Röwenstrunk, in: P. Stadler, J. Veit (Eds.), Digitale Edition Zwischen
Experiment Und Standardisierung, Berlin, New York, 2010.'
date_created: 2019-08-16T18:34:08Z
date_updated: 2022-01-06T06:51:27Z
department:
- _id: '233'
doi: 10.1515/9783110231144.61
editor:
- first_name: Peter
full_name: Stadler, Peter
last_name: Stadler
- first_name: Joachim
full_name: Veit, Joachim
last_name: Veit
language:
- iso: eng
place: Berlin, New York
publication: Digitale Edition zwischen Experiment und Standardisierung
publication_identifier:
isbn:
- '9783110231144'
publication_status: published
status: public
title: Die digitale Edition von Webers Klarinettenquintett – Ein Vergleich der Edirom-Versionen
2004 und 2008
type: book_chapter
user_id: '439'
year: '2010'
...
---
_id: '22050'
abstract:
- lang: eng
text: Generative production techniques have the advantage of manufacturing parts
via an additive process without needing a forming tool. One of these additive
manufacturing technologies is “Fused Deposition Modeling” (FDM). From a 3D-CAD
data set, components and assemblies are manufactured out of thermoplastic material
in only a few working steps. Native software automatically slices the data, calculates
the support structures, and creates toolpaths. The parts then are built up layer
by layer by means of an additive process. An extrusion head deposits the molten
thermoplastic filament to create each layer. This technology began as a process
for creating prototype parts; recently it has found new utility in the production
of manufacturing tools and as a manufacturing process for end-use parts. In order
to be used as a part for serial production, the components must possess the required
mechanical properties. To this end, not only is the chosen material relevant,
but a correct process control is also necessary. An interesting material for the
aircraft and automotive industry is the material PEI with the trade name Ultem*9085.
This material should typically be used on FDM-machines for the manufacturing of
end products. The aim of the research is to determine the present mechanical data
based on the process control, as well as reproducibility from job to job. In this
work the influence of the orientation and the structure of the manufactured parts
based on the mechanical data are analyzed. Sample parts are generated with the
given parameters of the native software based upon the CAD data. First, specimens
were analyzed concerning their geometry and configuration. The dimensions and
weight were measured. The mechanical tests conducted were the tensile and compression
tests.
author:
- first_name: A.
full_name: Bagsik, A.
last_name: Bagsik
- first_name: Volker
full_name: Schöppner, Volker
id: '20530'
last_name: Schöppner
- first_name: E.
full_name: Klemp, E.
last_name: Klemp
citation:
ama: 'Bagsik A, Schöppner V, Klemp E. FDM Part Quality Manufactured with ULTEM 9085.
In: Proceedings of International Conference Polymeric Materials. ; 2010.
doi:https://docplayer.net/255735-Fdm-part-quality-manufactured-with-ultem-9085.html'
apa: Bagsik, A., Schöppner, V., & Klemp, E. (2010). FDM Part Quality Manufactured
with ULTEM 9085. Proceedings of International Conference Polymeric Materials.
https://docplayer.net/255735-Fdm-part-quality-manufactured-with-ultem-9085.html
bibtex: '@inproceedings{Bagsik_Schöppner_Klemp_2010, title={FDM Part Quality Manufactured
with ULTEM 9085}, DOI={https://docplayer.net/255735-Fdm-part-quality-manufactured-with-ultem-9085.html},
booktitle={Proceedings of International Conference Polymeric Materials}, author={Bagsik,
A. and Schöppner, Volker and Klemp, E.}, year={2010} }'
chicago: Bagsik, A., Volker Schöppner, and E. Klemp. “FDM Part Quality Manufactured
with ULTEM 9085.” In Proceedings of International Conference Polymeric Materials,
2010. https://docplayer.net/255735-Fdm-part-quality-manufactured-with-ultem-9085.html.
ieee: 'A. Bagsik, V. Schöppner, and E. Klemp, “FDM Part Quality Manufactured with
ULTEM 9085,” 2010, doi: https://docplayer.net/255735-Fdm-part-quality-manufactured-with-ultem-9085.html.'
mla: Bagsik, A., et al. “FDM Part Quality Manufactured with ULTEM 9085.” Proceedings
of International Conference Polymeric Materials, 2010, doi:https://docplayer.net/255735-Fdm-part-quality-manufactured-with-ultem-9085.html.
short: 'A. Bagsik, V. Schöppner, E. Klemp, in: Proceedings of International Conference
Polymeric Materials, 2010.'
date_created: 2021-05-07T13:23:34Z
date_updated: 2022-04-25T08:04:26Z
department:
- _id: '219'
- _id: '624'
- _id: '367'
- _id: '9'
doi: https://docplayer.net/255735-Fdm-part-quality-manufactured-with-ultem-9085.html
language:
- iso: eng
publication: Proceedings of International Conference Polymeric Materials
publication_identifier:
isbn:
- 978-3-868-29282-4
quality_controlled: '1'
status: public
title: FDM Part Quality Manufactured with ULTEM 9085
type: conference
user_id: '70729'
year: '2010'
...
---
_id: '19605'
author:
- first_name: Katharina
full_name: Lürwer-Brüggemeier, Katharina
last_name: Lürwer-Brüggemeier
citation:
ama: Lürwer-Brüggemeier K. Mächtigkeit Und Komplexität von Berechnungen Mit Der
Ganzzahligen Division. Vol 261. Verlagsschriftenreihe des Heinz Nixdorf Instituts,
Paderborn; 2009.
apa: Lürwer-Brüggemeier, K. (2009). Mächtigkeit und Komplexität von Berechnungen
mit der ganzzahligen Division (Vol. 261). Verlagsschriftenreihe des Heinz
Nixdorf Instituts, Paderborn.
bibtex: '@book{Lürwer-Brüggemeier_2009, series={Verlagsschriftenreihe des Heinz
Nixdorf Instituts, Paderborn}, title={Mächtigkeit und Komplexität von Berechnungen
mit der ganzzahligen Division}, volume={261}, publisher={Verlagsschriftenreihe
des Heinz Nixdorf Instituts, Paderborn}, author={Lürwer-Brüggemeier, Katharina},
year={2009}, collection={Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn}
}'
chicago: Lürwer-Brüggemeier, Katharina. Mächtigkeit Und Komplexität von Berechnungen
Mit Der Ganzzahligen Division. Vol. 261. Verlagsschriftenreihe Des Heinz Nixdorf
Instituts, Paderborn. Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn,
2009.
ieee: K. Lürwer-Brüggemeier, Mächtigkeit und Komplexität von Berechnungen mit
der ganzzahligen Division, vol. 261. Verlagsschriftenreihe des Heinz Nixdorf
Instituts, Paderborn, 2009.
mla: Lürwer-Brüggemeier, Katharina. Mächtigkeit Und Komplexität von Berechnungen
Mit Der Ganzzahligen Division. Verlagsschriftenreihe des Heinz Nixdorf Instituts,
Paderborn, 2009.
short: K. Lürwer-Brüggemeier, Mächtigkeit Und Komplexität von Berechnungen Mit Der
Ganzzahligen Division, Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn,
2009.
date_created: 2020-09-21T14:07:23Z
date_updated: 2022-01-06T06:54:07Z
department:
- _id: '63'
- _id: '26'
intvolume: ' 261'
language:
- iso: eng
publisher: Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn
related_material:
link:
- relation: confirmation
url: http://digital.ub.uni-paderborn.de/ubpb/urn/urn:nbn:de:hbz:466-20090212010
series_title: Verlagsschriftenreihe des Heinz Nixdorf Instituts, Paderborn
status: public
supervisor:
- first_name: Friedhelm
full_name: Meyer auf der Heide, Friedhelm
id: '15523'
last_name: Meyer auf der Heide
title: Mächtigkeit und Komplexität von Berechnungen mit der ganzzahligen Division
type: dissertation
user_id: '5786'
volume: 261
year: '2009'
...