@article{39972,
  author       = {{Kitzerow, Heinz-Siegfried}},
  issn         = {{1439-9598}},
  journal      = {{Nachrichten aus der Chemie}},
  keywords     = {{General Chemical Engineering, General Chemistry}},
  number       = {{6}},
  pages        = {{678--679}},
  publisher    = {{Wiley}},
  title        = {{{33. Arbeitstagung Flüssigkristalle}}},
  doi          = {{10.1002/nadc.20050530635}},
  volume       = {{53}},
  year         = {{2010}},
}

@article{39739,
  abstract     = {{<jats:p> 
   The electrooptic characteristics of the field-induced reorientation of a nematic liquid crystal are studied using graphene layers as transparent conductive electrodes. The covering of a large area with highly conductive graphene was achieved by the thermal reduction of a graphene oxide film. The conductivity of the graphene electrode provides electrooptic properties that are comparable to those of liquid crystal cells with two conventional indium tin oxide electrodes. This result confirms earlier studies and suggestions concerning graphene-based liquid crystal devices. It demonstrates that the fabrication of graphene layers via the deposition and subsequent reduction of graphene oxide is suitable for liquid crystal applications. 
   </jats:p>}},
  author       = {{Nordendorf, Gaby and Kasdorf, Olga and Kitzerow, Heinz-Siegfried and Liang, Yanyu and Feng, Xinliang and Müllen, Klaus}},
  issn         = {{0021-4922}},
  journal      = {{Japanese Journal of Applied Physics}},
  keywords     = {{General Physics and Astronomy, General Engineering}},
  number       = {{10R}},
  publisher    = {{IOP Publishing}},
  title        = {{{Liquid Crystal Addressing by Graphene Electrodes Made from Graphene Oxide}}},
  doi          = {{10.1143/jjap.49.100206}},
  volume       = {{49}},
  year         = {{2010}},
}

@article{39738,
  author       = {{Urbanski, Martin and Kinkead, Brandy and Qi, Hao and Hegmann, Torsten and Kitzerow, Heinz-Siegfried}},
  issn         = {{2040-3364}},
  journal      = {{Nanoscale}},
  keywords     = {{General Materials Science}},
  number       = {{7}},
  publisher    = {{Royal Society of Chemistry (RSC)}},
  title        = {{{Electroconvection in nematic liquid crystals via nanoparticle doping}}},
  doi          = {{10.1039/c0nr00139b}},
  volume       = {{2}},
  year         = {{2010}},
}

@article{39737,
  author       = {{Lorenz, Alexander and Schuhmann, Rolf and Kitzerow, Heinz-Siegfried}},
  issn         = {{0003-6935}},
  journal      = {{Applied Optics}},
  number       = {{20}},
  publisher    = {{The Optical Society}},
  title        = {{{Switchable waveguiding in two liquid-crystal-filled photonic crystal fibers}}},
  doi          = {{10.1364/ao.49.003846}},
  volume       = {{49}},
  year         = {{2010}},
}

@inproceedings{39736,
  author       = {{Kinkead, Brandy and Urbanski, Martin and Qi, Hao and Kitzerow, Heinz-Siegfried and Hegmann, Torsten}},
  booktitle    = {{SPIE Proceedings}},
  editor       = {{Khoo, Iam Choon}},
  issn         = {{0277-786X}},
  publisher    = {{SPIE}},
  title        = {{{Alignment and electrooptic effects in nanoparticle-doped nematic liquid crystals}}},
  doi          = {{10.1117/12.858831}},
  year         = {{2010}},
}

@article{4127,
  abstract     = {{The dynamics of charge and spin injection currents excited by circularly polarized, one-color laser beams in
semiconductor quantum wells is analyzed. Our microscopic approach is based on a 14x14 k · p band-structure
theory in combination with multisubband semiconductor Bloch equations which allows a detailed analysis of
the photogenerated carrier distributions and coherences in k space. Charge and spin injection currents are
numerically calculated for [110]- and [001]-grown GaAs quantum wells including dc population contributions
and ac contributions that arise from intersubband coherences. The dependencies of the injection currents on the
excitation conditions, in particular, the photon energy are computed and discussed.}},
  author       = {{Duc, Huynh Thanh and Förstner, Jens and Meier, Torsten}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  keywords     = {{tet_topic_qw}},
  number       = {{11}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells}}},
  doi          = {{10.1103/physrevb.82.115316}},
  volume       = {{82}},
  year         = {{2010}},
}

@inproceedings{4176,
  abstract     = {{A microscopic theory that describes injection currents in GaAs quantum wells is presented. 14 × 14 band k.p theory is used to compute the band structure including anisotropy and spin-orbit interaction. Transient injection currents are obtained via numerical solutions of the semiconductor Bloch equations. Depending on the growth direction of the considered quantum well system and the propagation and polarization directions of the incident light beam, it is possible to generate charge and/or spin photocurrents on ultrashort time scales. The dependence of the photocurrents on the excitation conditions is computed and discussed.}},
  author       = {{Duc, Huynh Thanh and Förstner, Jens and Meier, Torsten}},
  booktitle    = {{Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV}},
  editor       = {{Song, Jin-Joo and Tsen, Kong-Thon and Betz, Markus and Elezzabi, Abdulhakem Y.}},
  keywords     = {{tet_topic_qw}},
  pages        = {{76000S--76000S--9}},
  publisher    = {{SPIE}},
  title        = {{{Microscopic theoretical analysis of optically generated injection currents in semiconductor quantum wells}}},
  doi          = {{10.1117/12.840388}},
  volume       = {{7600}},
  year         = {{2010}},
}

@article{24980,
  abstract     = {{We discuss transport and localization properties on the insulating side of the disorder dominated superconductor-insulator transition, described in terms of the dirty boson model. Analyzing the spectral properties of the interacting bosons in the absence of phonons, we argue that the Bose glass phase admits three distinct regimes. For strongest disorder the boson system is a fully localized, perfect insulator at any temperature. At smaller disorder, only the low temperature phase exhibits perfect insulation while delocalization takes place above a finite temperature. We argue that a third phase must intervene between these perfect insulators and the superconductor. This conducting Bose glass phase is characterized by a mobility edge in the many body spectrum, located at finite energy above the ground state. In this insulating regime purely electronically activated transport occurs, with a conductivity following an Arrhenius law at asymptotically low temperatures, while a tendency to superactivation is predicted at higher T. These predictions are in good agreement with recent transport experiments in highly disordered films of superconducting materials.}},
  author       = {{Gögh, N. and Thomas, P. and Kuznetsova, I. and Meier, Torsten and Varga, I.}},
  issn         = {{0003-3804}},
  journal      = {{Annalen der Physik}},
  number       = {{12}},
  pages        = {{905--909}},
  title        = {{{Localization of excitons in weakly disordered semiconductor structures: A model study}}},
  doi          = {{10.1002/andp.20095211219}},
  volume       = {{18}},
  year         = {{2010}},
}

@article{23480,
  abstract     = {{We discuss transport and localization properties on the insulating side of the disorder dominated superconductor-insulator transition, described in terms of the dirty boson model. Analyzing the spectral properties of the interacting bosons in the absence of phonons, we argue that the Bose glass phase admits three distinct regimes. For strongest disorder the boson system is a fully localized, perfect insulator at any temperature. At smaller disorder, only the low temperature phase exhibits perfect insulation while delocalization takes place above a finite temperature. We argue that a third phase must intervene between these perfect insulators and the superconductor. This conducting Bose glass phase is characterized by a mobility edge in the many body spectrum, located at finite energy above the ground state. In this insulating regime purely electronically activated transport occurs, with a conductivity following an Arrhenius law at asymptotically low temperatures, while a tendency to superactivation is predicted at higher T. These predictions are in good agreement with recent transport experiments in highly disordered films of superconducting materials.}},
  author       = {{Gögh, N. and Thomas, P. and Kuznetsova, I. and Meier, Torsten and Varga, I.}},
  issn         = {{0003-3804}},
  journal      = {{Annalen der Physik}},
  number       = {{12}},
  pages        = {{905--909}},
  title        = {{{Localization of excitons in weakly disordered semiconductor structures: A model study}}},
  doi          = {{10.1002/andp.200910382}},
  year         = {{2010}},
}

@article{13581,
  author       = {{Wippermann, S. and Schmidt, Wolf Gero and Bechstedt, F. and Chandola, S. and Hinrichs, K. and Gensch, M. and Esser, N. and Fleischer, K. and McGilp, J. F.}},
  issn         = {{1862-6351}},
  journal      = {{physica status solidi (c)}},
  number       = {{2}},
  pages        = {{133--136}},
  title        = {{{Optical anisotropy of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles}}},
  doi          = {{10.1002/pssc.200982413}},
  volume       = {{7}},
  year         = {{2010}},
}

@article{13573,
  abstract     = {{Given the vast range of lithium niobate (LiNbO3) applications, the knowledge about its electronic and optical properties is surprisingly limited. The direct band gap of 3.7 eV for the ferroelectric phase – frequently cited in the literature – is concluded from optical experiments. Recent theoretical investigations show that the electronic band‐structure and optical properties are very sensitive to quasiparticle and electron‐hole attraction effects, which were included using the GW approximation for the electron self‐energy and the Bethe‐Salpeter equation respectively, both based on a model screening function. The calculated fundamental gap was found to be at least 1 eV larger than the experimental value. To resolve this discrepancy we performed first‐principles GW calculations for lithium niobate using the full‐potential linearized augmented plane‐wave (FLAPW) method. Thereby we use the parameter‐free random phase approximation for a realistic description of the nonlocal and energydependent screening. This leads to a band gap of about 4.7 (4.2) eV for ferro(para)‐electric lithium niobate.}},
  author       = {{Thierfelder, Christian and Sanna, Simone and Schindlmayr, Arno and Schmidt, Wolf Gero}},
  issn         = {{1610-1642}},
  journal      = {{Physica Status Solidi C}},
  location     = {{Weimar}},
  number       = {{2}},
  pages        = {{362--365}},
  publisher    = {{Wiley-VCH}},
  title        = {{{Do we know the band gap of lithium niobate?}}},
  doi          = {{10.1002/pssc.200982473}},
  volume       = {{7}},
  year         = {{2010}},
}

@article{13574,
  author       = {{Gerstmann, Uwe and Rohrmüller, M. and Mauri, F. and Schmidt, Wolf Gero}},
  issn         = {{1862-6351}},
  journal      = {{physica status solidi (c)}},
  number       = {{2}},
  pages        = {{157--160}},
  title        = {{{Ab initiog-tensor calculation for paramagnetic surface states: hydrogen adsorption at Si surfaces}}},
  doi          = {{10.1002/pssc.200982462}},
  volume       = {{7}},
  year         = {{2010}},
}

@article{13656,
  author       = {{Bihler, C. and Gerstmann, Uwe and Hoeb, M. and Graf, T. and Gjukic, M. and Schmidt, Wolf Gero and Stutzmann, M. and Brandt, M. S.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{20}},
  title        = {{{Manganese-hydrogen complexes inGa1−xMnxN}}},
  doi          = {{10.1103/physrevb.80.205205}},
  volume       = {{80}},
  year         = {{2010}},
}

@article{62930,
  author       = {{Schumacher, Stefan and Galbraith, Ian and Ruseckas, Arvydas and Turnbull, Graham A. and Samuel, Ifor D. W.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{24}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Dynamics of photoexcitation and stimulated optical emission in conjugated polymers: A multiscale quantum-chemistry and Maxwell-Bloch-equations approach}}},
  doi          = {{10.1103/physrevb.81.245407}},
  volume       = {{81}},
  year         = {{2010}},
}

@article{13839,
  author       = {{Blankenburg, S. and Schmidt, Wolf Gero}},
  issn         = {{1862-6351}},
  journal      = {{physica status solidi (c)}},
  number       = {{2}},
  pages        = {{415--417}},
  title        = {{{Temperature dependent stability of self-assembled molecular rows}}},
  doi          = {{10.1002/pssc.200982460}},
  volume       = {{7}},
  year         = {{2010}},
}

@article{13838,
  author       = {{Sanna, Simone and Schmidt, Wolf Gero}},
  issn         = {{1862-6351}},
  journal      = {{physica status solidi (c)}},
  number       = {{7-8}},
  pages        = {{2272--2274}},
  title        = {{{GaN growth on LiNbO3 (0001) - a first-principles simulation}}},
  doi          = {{10.1002/pssc.200983649}},
  volume       = {{7}},
  year         = {{2010}},
}

@article{13837,
  abstract     = {{<jats:p>In non-annealed 6H-SiC samples that were electron irradiated at room temperature, a new EPR signal due to a S=1 defect center with exceptionally large zero-field splitting (D = +652•10-4 cm-1) has been observed under illumination. A positive sign of D demonstrates that the spin-orbit contribution to the zero-field splitting exceeds by far that of the spin-spin interaction. A principal axis of the fine structure tilted by 59° against the crystal c-axis as well as the exceptionally high zero-field splitting D can be qualitatively understood by the occurrence of additional close-lying defect levels in defect clusters resulting in comparatively large second-order spin-orbit coup¬ling. A tentative assignment to vacancy clusters is supported by the observed annealing behavior.  </jats:p>}},
  author       = {{Scholle, Andreas and Greulich-Weber, Siegmund and Rauls, Eva and Schmidt, Wolf Gero and Gerstmann, Uwe}},
  issn         = {{1662-9752}},
  journal      = {{Materials Science Forum}},
  pages        = {{403--406}},
  title        = {{{Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC}}},
  doi          = {{10.4028/www.scientific.net/msf.645-648.403}},
  volume       = {{645-648}},
  year         = {{2010}},
}

@article{13843,
  author       = {{Wippermann, S. and Schmidt, Wolf Gero and Thissen, P. and Grundmeier, Guido}},
  issn         = {{1862-6351}},
  journal      = {{physica status solidi (c)}},
  number       = {{2}},
  pages        = {{137--140}},
  title        = {{{Dissociative and molecular adsorption of water onα-Al2O3(0001)}}},
  doi          = {{10.1002/pssc.200982423}},
  volume       = {{7}},
  year         = {{2010}},
}

@article{13836,
  author       = {{Rauls, E. and Blankenburg, S. and Schmidt, Wolf Gero}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{12}},
  title        = {{{Chemical reactivity on surfaces: Modeling the imide synthesis from DATP and PTCDA on Au(111)}}},
  doi          = {{10.1103/physrevb.81.125401}},
  volume       = {{81}},
  year         = {{2010}},
}

@article{13842,
  author       = {{Sanna, Simone and Gavrilenko, Alexander V. and Schmidt, Wolf Gero}},
  issn         = {{1862-6351}},
  journal      = {{physica status solidi (c)}},
  number       = {{2}},
  pages        = {{145--148}},
  title        = {{{Ab initio investigation of the LiNbO3(0001) surface}}},
  doi          = {{10.1002/pssc.200982456}},
  volume       = {{7}},
  year         = {{2010}},
}