@inproceedings{4184,
  abstract     = {{We have experimentally investigated injection currents generated by all-optical excitation of GaAs/AlGaAs quantum wells excited with 130 fs optical pulses. The currents have been detected via free-space THz experiments at room temperature. Our experiments prove that Coulomb effects strongly influence injection currents. This becomes most prominently visible when exciting light-hole exciton transitions. At this photon energy we observe a pronounced phase shift of the current transients which is due to oppositely oriented heavy-hole and light-hole type contributions. We are currently developing a microscopic theory based on a 14×14 k.p model in combination with the semiconductor Bloch equations to describe the observed features quantitatively. The combined theoretical and experimental approach will allow us to analyze the influence of the bandstructure and interaction effects on the injection current amplitude and current dynamics.}},
  author       = {{Bieler, M. and Pierz, K. and Siegner, U. and Dawson, P. and Duc, H. T. and Förstner, Jens and Meier, Torsten}},
  booktitle    = {{Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII}},
  editor       = {{Tsen, Kong-Thon and Song, Jin-Joo and Betz, Markus and Elezzabi, Abdulhakem Y.}},
  keywords     = {{tet_topic_qw}},
  location     = {{San Jose (California / USA)}},
  pages        = {{721404--721404--13}},
  publisher    = {{SPIE}},
  title        = {{{Generation of injection currents in (110)-oriented GaAs quantum wells: experimental observation and development of a microscopic theory}}},
  doi          = {{10.1117/12.811841}},
  volume       = {{7214}},
  year         = {{2009}},
}

@article{24983,
  abstract     = {{The recently developed two-dimensional Fourier-Transform-Spectroscopy (2DFTS) in the optical regime has been established as an elegant experiment, which has manifold of applications in the investigation of semiconductor nanostructures. Here we focus on the real and imaginary part 2DFT spectra. As predicted recently, using rephasing and non-rephasing modes, we are able to determine the homogeneous and inhomogeneous broadenings of coupled excitonic resonances even for weak disorder where photon-echo data are not useful. Computed real and imaginary parts of the 2DFTS for rephasing and non-rephasing modes are compared with experimental data of a GaAs quantum well. It is demonstrated, that phase sensitive data for the rephasing and non-rephasing modes are able to accurately provide the disorder induced broadening in a complex coupled system for each transition separately. }},
  author       = {{Kuznetsova, Irina and Thomas, Peter and Meier, Torsten and Zhang, Tianhao and Cundiff, Steven T.}},
  issn         = {{1610-1634}},
  journal      = {{physica status solidi (c)}},
  number       = {{2}},
  pages        = {{445--448}},
  publisher    = {{WILEY‐VCH Verlag}},
  title        = {{{Determination of homogeneous and inhomogeneous broadenings of quantum-well excitons by 2DFTS: An experiment-theory comparison}}},
  doi          = {{10.1002/pssc.200880302}},
  volume       = {{6}},
  year         = {{2009}},
}

@article{24982,
  abstract     = {{A microscopic analysis of the emitted radiation of a semiconductor nanostructure after excitation with an extremely intense ultrashort laser pulse is presented. It is shown that the extreme nonlinear optical response is not sufficiently described by pure interband transitions but one has to include intraband effects as well.
Numerical solutions of extended Bloch equations that include the coupled inter- and intraband dynamics are presented. For large excitation intensities, the intraband effects strongly modify the polarization dynamics and lead to a strong enhancement of high-harmonic generation compared to pure interband dynamics.}},
  author       = {{Golde, Daniel and Meier, Torsten and Koch, Stephan W.}},
  issn         = {{1610-1634}},
  journal      = {{physica status solidi (c)}},
  number       = {{2}},
  pages        = {{420--423}},
  publisher    = {{WILEY‐VCH Verlag}},
  title        = {{{Microscopic analysis of high-harmonic generation in semiconductor nanostructures}}},
  doi          = {{10.1002/pssc.200880309}},
  volume       = {{6}},
  year         = {{2009}},
}

@article{15847,
  author       = {{Kwong, N. H. and Schumacher, Stefan and Binder, R.}},
  issn         = {{0031-9007}},
  journal      = {{Physical Review Letters}},
  title        = {{{Electron-Spin Beat Susceptibility of Excitons in Semiconductor Quantum Wells}}},
  doi          = {{10.1103/physrevlett.103.056405}},
  year         = {{2009}},
}

@article{13580,
  author       = {{Wippermann, S. and Schmidt, Wolf Gero and Thissen, P. and Grundmeier, Guido}},
  issn         = {{1862-6351}},
  journal      = {{physica status solidi (c)}},
  number       = {{2}},
  pages        = {{137--140}},
  title        = {{{Dissociative and molecular adsorption of water onα-Al2O3(0001)}}},
  doi          = {{10.1002/pssc.200982423}},
  volume       = {{7}},
  year         = {{2009}},
}

@article{13583,
  author       = {{Scholle, A. and Greulich-Weber, S. and Rauls, E. and Schmidt, Wolf Gero and Gerstmann, Uwe}},
  issn         = {{0921-4526}},
  journal      = {{Physica B: Condensed Matter}},
  pages        = {{4742--4744}},
  title        = {{{Vacancy clusters created via room temperature irradiation in 6H-SiC}}},
  doi          = {{10.1016/j.physb.2009.08.123}},
  volume       = {{404}},
  year         = {{2009}},
}

@article{13579,
  author       = {{Sanna, Simone and Gavrilenko, Alexander V. and Schmidt, Wolf Gero}},
  issn         = {{1862-6351}},
  journal      = {{physica status solidi (c)}},
  number       = {{2}},
  pages        = {{145--148}},
  title        = {{{Ab initioinvestigation of the LiNbO3(0001) surface}}},
  doi          = {{10.1002/pssc.200982456}},
  volume       = {{7}},
  year         = {{2009}},
}

@article{13577,
  author       = {{Blankenburg, S. and Rauls, E. and Schmidt, Wolf Gero}},
  issn         = {{1862-6351}},
  journal      = {{physica status solidi (c)}},
  number       = {{2}},
  pages        = {{153--156}},
  title        = {{{The physics of highly ordered molecular rows}}},
  doi          = {{10.1002/pssc.200982459}},
  volume       = {{7}},
  year         = {{2009}},
}

@article{13578,
  author       = {{Sanna, Simone and Gavrilenko, Alexander V. and Schmidt, Wolf Gero}},
  issn         = {{1862-6351}},
  journal      = {{physica status solidi (c)}},
  pages        = {{145--148}},
  title        = {{{Ab initioinvestigation of the LiNbO3(0001) surface}}},
  doi          = {{10.1002/pssc.200982456}},
  year         = {{2009}},
}

@article{13665,
  author       = {{Landmann, M. and Rauls, E. and Schmidt, Wolf Gero}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{4}},
  title        = {{{First-principles calculations of clean Au(110) surfaces and chemisorption of atomic oxygen}}},
  doi          = {{10.1103/physrevb.79.045412}},
  volume       = {{79}},
  year         = {{2009}},
}

@article{13662,
  author       = {{Blankenburg, S and Schmidt, Wolf Gero}},
  issn         = {{0953-8984}},
  journal      = {{Journal of Physics: Condensed Matter}},
  title        = {{{Glutamic acid adsorbed on Ag(110): direct and indirect molecular interactions}}},
  doi          = {{10.1088/0953-8984/21/18/185001}},
  volume       = {{21}},
  year         = {{2009}},
}

@article{13659,
  author       = {{Blankenburg, S. and Rauls, E. and Schmidt, Wolf Gero}},
  issn         = {{1932-7447}},
  journal      = {{The Journal of Physical Chemistry C}},
  pages        = {{12653--12657}},
  title        = {{{Role of Dihydrogen Bonds for the Stabilization of Self-Assembled Molecular Nanostructures}}},
  doi          = {{10.1021/jp902337p}},
  volume       = {{113}},
  year         = {{2009}},
}

@article{13664,
  author       = {{Lange, B. and Posner, R. and Pohl, K. and Thierfelder, C. and Grundmeier, Guido and Blankenburg, S. and Schmidt, Wolf Gero}},
  issn         = {{0039-6028}},
  journal      = {{Surface Science}},
  pages        = {{60--64}},
  title        = {{{Water adsorption on hydrogenated Si(111) surfaces}}},
  doi          = {{10.1016/j.susc.2008.10.030}},
  volume       = {{603}},
  year         = {{2009}},
}

@article{13661,
  author       = {{Landmann, M. and Rauls, E. and Schmidt, Wolf Gero}},
  issn         = {{1932-7447}},
  journal      = {{The Journal of Physical Chemistry C}},
  pages        = {{5690--5699}},
  title        = {{{Chainlike Au−O Structures on Au(110)-(1 × r) Surfaces Calculated from First Principles}}},
  doi          = {{10.1021/jp810581s}},
  volume       = {{113}},
  year         = {{2009}},
}

@article{13660,
  author       = {{Chandola, S. and Hinrichs, K. and Gensch, M. and Esser, N. and Wippermann, S. and Schmidt, Wolf Gero and Bechstedt, F. and Fleischer, K. and McGilp, J. F.}},
  issn         = {{0031-9007}},
  journal      = {{Physical Review Letters}},
  number       = {{22}},
  title        = {{{Structure of Si(111)-In Nanowires Determined from the Midinfrared Optical Response}}},
  doi          = {{10.1103/physrevlett.102.226805}},
  volume       = {{102}},
  year         = {{2009}},
}

@article{13658,
  author       = {{Passmann, Regina and Favero, Priscila and Schmidt, Wolf Gero and Miotto, Ronei and Braun, Walter and Richter, Wolfgang and Kneissl, Michael and Esser, Norbert and Vogt, Patrick}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{12}},
  title        = {{{Adsorption structure of cyclopentene on InP(001)(2×4)}}},
  doi          = {{10.1103/physrevb.80.125303}},
  volume       = {{80}},
  year         = {{2009}},
}

@article{13657,
  author       = {{Sanna, Simone and Schmidt, Wolf Gero and Frauenheim, Th. and Gerstmann, Uwe}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{10}},
  title        = {{{Rare-earth defect pairs in GaN: LDA+U calculations}}},
  doi          = {{10.1103/physrevb.80.104120}},
  volume       = {{80}},
  year         = {{2009}},
}

@article{13655,
  author       = {{Thissen, P. and Grundmeier, Guido and Wippermann, S. and Schmidt, Wolf Gero}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{24}},
  title        = {{{Water adsorption on the α-Al2O3(0001) surface}}},
  doi          = {{10.1103/physrevb.80.245403}},
  volume       = {{80}},
  year         = {{2009}},
}

@article{13844,
  abstract     = {{<jats:p>EPR and ESE in nitrogen doped 4H- and 6H-SiC show besides the well known triplet lines of 14N on quasi-cubic (Nc,k) and hexagonal (Nc,h) sites additional lines (Nx) of comparatively low intensity providing half the hf splitting of Nc,k. Frequently re-interpreted as spin-forbid¬den lines, arising from Nc,k pairs and triads or resulting from hopping conductivity, only re¬cent¬ly the theoretical calculation of the corresponding g-tensors lead to a tentative model of distant NC donor pairs on inequivalent lattice sites which are coupled to S = 1 assuming a fine-struc¬ture splitting too small to be observed in the EPR and ESE experiments. In this work, we pre¬sent ESE nutation measurements confirming S = 1 for the Nx center. Analysing the nutation frequencies in comparison with that of the Nc,k (S = 1/2) spectrum as well as the line width of ESE and EPR spectra we obtain a rough estimate between 5104 cm-1 and 50104 cm-1 for the fine-structure splitting demonstrating efficient spin-coupling between nitrogen donors in 4H-SiC.</jats:p>}},
  author       = {{Savchenko, D.V. and Pöppl, Andreas and Kalabukhova, Ekaterina N. and Greulich-Weber, Siegmund and Rauls, Eva and Schmidt, Wolf Gero and Gerstmann, Uwe}},
  issn         = {{1662-9752}},
  journal      = {{Materials Science Forum}},
  pages        = {{343--346}},
  title        = {{{Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC}}},
  doi          = {{10.4028/www.scientific.net/msf.615-617.343}},
  volume       = {{615-617}},
  year         = {{2009}},
}

@article{18632,
  abstract     = {{We present measurements of the effective electron mass in biaxial tensile strained silicon on insulator (SSOI) material with 1.2 GPa stress and in unstrained SOI. Hall-bar metal oxide semiconductor field effect transistors on 60 nm SSOI and SOI were fabricated and Shubnikov–de Haas oscillations in the temperature range of T=0.4–4 K for magnetic fields of B=0–10 T were measured. The effective electron mass in SSOI and SOI samples was determined as mt=(0.20±0.01)m0. This result is in excellent agreement with first-principles calculations of the
effective electron mass in the presence of strain.}},
  author       = {{Feste, Sebastian F. and Schäpers, Thomas and Buca, Dan and Zhao, Qing Tai and Knoch, Joachim and Bouhassoune, Mohammed and Schindlmayr, Arno and Mantl, Siegfried}},
  issn         = {{1077-3118}},
  journal      = {{Applied Physics Letters}},
  number       = {{18}},
  publisher    = {{American Institute of Physics}},
  title        = {{{Measurement of effective electron mass in biaxial tensile strained silicon on insulator}}},
  doi          = {{10.1063/1.3254330}},
  volume       = {{95}},
  year         = {{2009}},
}