@article{22809, author = {{Rai, Ashish K. and Gordon, Simon and Ludwig, Arne and Wieck, Andreas D. and Zrenner, Artur and Reuter, Dirk}}, issn = {{0370-1972}}, journal = {{physica status solidi (b)}}, pages = {{437--441}}, title = {{{Spatially indirect transitions in electric field tunable quantum dot diodes}}}, doi = {{10.1002/pssb.201552591}}, year = {{2015}}, } @article{7217, author = {{Jostmeier, Thorben and Wecker, Tobias and Reuter, Dirk and As, Donat Josef and Betz, Markus}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{21}}, publisher = {{AIP Publishing}}, title = {{{Ultrafast carrier dynamics and resonant inter-miniband nonlinearity of a cubic GaN/AlN superlattice}}}, doi = {{10.1063/1.4936330}}, volume = {{107}}, year = {{2015}}, } @article{7218, author = {{Debus, J. and Kudlacik, D. and Sapega, V. F. and Dunker, D. and Bohn, P. and Paßmann, F. and Braukmann, D. and Rautert, J. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Bayer, M.}}, issn = {{1098-0121}}, journal = {{Physical Review B}}, number = {{19}}, publisher = {{American Physical Society (APS)}}, title = {{{Nuclear spin polarization in the electron spin-flip Raman scattering of singly charged (In,Ga)As/GaAs quantum dots}}}, doi = {{10.1103/physrevb.92.195421}}, volume = {{92}}, year = {{2015}}, } @article{7219, author = {{Kuhlmann, Andreas V. and Prechtel, Jonathan H. and Houel, Julien and Ludwig, Arne and Reuter, Dirk and Wieck, Andreas D. and Warburton, Richard J.}}, issn = {{2041-1723}}, journal = {{Nature Communications}}, number = {{1}}, publisher = {{Springer Nature}}, title = {{{Transform-limited single photons from a single quantum dot}}}, doi = {{10.1038/ncomms9204}}, volume = {{6}}, year = {{2015}}, } @article{7220, author = {{Mehta, M. and Reuter, Dirk and Kamruddin, M. and Tyagi, A. K. and Wieck, A. D.}}, issn = {{1793-2920}}, journal = {{Nano}}, number = {{04}}, publisher = {{World Scientific Pub Co Pte Lt}}, title = {{{Influence of Post-Implantation Annealing Parameters on the Focused Ion Beam Directed Nucleation of InAs Quantum Dots}}}, doi = {{10.1142/s1793292015500496}}, volume = {{10}}, year = {{2015}}, } @article{7221, author = {{Chen, J. C. H. and Klochan, O. and Micolich, A. P. and Das Gupta, K. and Sfigakis, F. and Ritchie, D. A. and Trunov, K. and Reuter, Dirk and Wieck, A. D. and Hamilton, A. R.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{18}}, publisher = {{AIP Publishing}}, title = {{{Fabrication and characterisation of gallium arsenide ambipolar quantum point contacts}}}, doi = {{10.1063/1.4918934}}, volume = {{106}}, year = {{2015}}, } @article{7222, author = {{Finke, A. and Ruth, M. and Scholz, S. and Ludwig, A. and Wieck, A. D. and Reuter, Dirk and Pawlis, A.}}, issn = {{1098-0121}}, journal = {{Physical Review B}}, number = {{3}}, publisher = {{American Physical Society (APS)}}, title = {{{Extending the spectral range of CdSe/ZnSe quantum wells by strain engineering}}}, doi = {{10.1103/physrevb.91.035409}}, volume = {{91}}, year = {{2015}}, } @article{4276, abstract = {{We analyse an InAs/GaAs-based electric field tunable single quantum dot diode with a thin tunnelling barrier between a buried n þ -back contact and a quantum dot layer. In voltage- dependent photoluminescence measurements, we observe rich signatures from spatially direct and indirect transitions from the wetting layer and from a single quantum dot. By analysing the Stark effect, we show that the indirect transitions result from a recombination between confined holes in the wetting or quantum dot layer with electrons from the edge of the Fermi sea in the back contact. Using a 17 nm tunnel barrier which provides comparably weak tunnel coupling allowed us to observe clear signatures of direct and corresponding indirect lines for a series of neutral and positively charged quantum dot states.}}, author = {{Rai, Ashish K. and Gordon, Simon and Ludwig, Arne and Wieck, Andreas D. and Zrenner, Artur and Reuter, Dirk}}, issn = {{0370-1972}}, journal = {{physica status solidi (b)}}, keywords = {{excitons, GaAs, InAs, quantum dots, spatially indirect transitions, Stark shift}}, number = {{3}}, pages = {{437--441}}, publisher = {{Wiley}}, title = {{{Spatially indirect transitions in electric field tunable quantum dot diodes}}}, doi = {{10.1002/pssb.201552591}}, volume = {{253}}, year = {{2015}}, } @article{4331, abstract = {{We report about the fabrication and analysis of high Q photonic crystal cavities with metallic Schottky-contacts. The structures are based on GaAs n-i membranes with an InGaAs quantum well in the i-region and nanostructured low ohmic metal top-gates. They are designed for photocurrent readout within the cavity and fast electric manipulations. The cavity structures are characterized by photoluminescence and photocurrent spectroscopy under resonant excitation. We find strong cavity resonances in the photocurrent spectra and surprisingly high Q-factors up to 6500. Temperature dependent photocurrent measurements in the region between 4.5K and 310K show an exponential enhancement of the photocurrent signal and an external quantum efficiency up to 0.26.}}, author = {{Quiring, W. and Al-Hmoud, M. and Rai, A. and Reuter, Dirk and Wieck, A. D. and Zrenner, Artur}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{4}}, publisher = {{AIP Publishing}}, title = {{{Photonic crystal cavities with metallic Schottky contacts}}}, doi = {{10.1063/1.4928038}}, volume = {{107}}, year = {{2015}}, } @article{6520, abstract = {{We investigate the response of a polariton laser driven slightly off-resonantly using light fields differing from the routinely studied coherent pump sources. The response to driving light fields with thermal and displaced thermal statistics with varying correlation times shows significant differences in the transmitted intensity, its noise, and the position of the nonlinear threshold. We predict that adding more photons on average may actually reduce the transmission through the polariton system.}}, author = {{Assmann, Marc and Bayer, Manfred}}, issn = {{1050-2947}}, journal = {{PHYSICAL REVIEW A}}, number = {{5}}, title = {{{Stochastic pumping of a polariton fluid}}}, doi = {{10.1103/PhysRevA.91.053835}}, volume = {{91}}, year = {{2015}}, } @article{6522, abstract = {{An electric field applied to a semiconductor reduces its crystal symmetry and modifies its electronic structure which is expected to result in changes of the linear and nonlinear response to optical excitation. In GaAs, we observe experimentally strong electric field effects on the optical second (SHG) and third (THG) harmonic generation. The SHG signal for the laser-light k vector parallel to the [001] crystal axis is symmetry forbidden in the electric-dipole approximation, but can be induced by an applied electric field in the vicinity of the 1s exciton energy. Surprisingly, the THG signal, which is allowed in this geometry, is considerably reduced by the electric field. We develop a theory which provides good agreement with the experimental data. In particular, it shows that the optical nonlinearities for the 1s exciton resonance are modified in an electric field by the Stark effect, which mixes the 1s and 2p exciton states of opposite parity. This mixing acts in opposite way on the SHG and THG processes, as it leads to the appearance of forbidden SHG in (001)-oriented GaAs and decreases the crystallographic THG.}}, author = {{Brunne, D. and Lafrentz, M. and Pavlov, V. V. and Pisarev, R. V. and Rodina, A. V. and Yakovlev, D. R. and Bayer, M.}}, issn = {{1098-0121}}, journal = {{Physical Review B}}, number = {{8}}, publisher = {{American Physical Society (APS)}}, title = {{{Electric field effect on optical harmonic generation at the exciton resonances in GaAs}}}, doi = {{10.1103/physrevb.92.085202}}, volume = {{92}}, year = {{2015}}, } @article{6524, abstract = {{We use a picosecond acoustics technique to modulate the laser output of electrically pumped GaAs/AlAs micropillar lasers with InGaAs quantum dots. The modulation of the emission wavelength takes place on the frequencies of the nanomechanical extensional and breathing (radial) modes of the micropillars. The amplitude of the modulation for various nanomechanical modes is different for every micropillar which is explained by a various elastic contact between the micropillar walls and polymer environment.}}, author = {{Czerniuk, T. and Tepper, J. and Akimov, A. V. and Unsleber, S. and Schneider, C. and Kamp, M. and Höfling, S. and Yakovlev, D. R. and Bayer, M.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{4}}, publisher = {{AIP Publishing}}, title = {{{Impact of nanomechanical resonances on lasing from electrically pumped quantum dot micropillars}}}, doi = {{10.1063/1.4906611}}, volume = {{106}}, year = {{2015}}, } @article{6526, abstract = {{We introduce photon-statistics excitation spectroscopy and exemplarily apply it to a quantum-dot micropillar laser. Both the intensity and the photon number statistics of the emission from the micropillar show a strong dependence on the photon statistics of the light used for excitation of the sample. The results under coherent and pseudothermal excitation reveal that a description of the laser properties in terms of mean input photon numbers is not sufficient. It is demonstrated that the micropillar acts as a superthermal light source when operated close to its threshold. Possible applications for important spectroscopic techniques are discussed.}}, author = {{Kazimierczuk, T. and Schmutzler, J. and Aßmann, M. and Schneider, C. and Kamp, M. and Höfling, S. and Bayer, M.}}, issn = {{0031-9007}}, journal = {{Physical Review Letters}}, number = {{2}}, publisher = {{American Physical Society (APS)}}, title = {{{Photon-Statistics Excitation Spectroscopy of a Quantum-Dot Micropillar Laser}}}, doi = {{10.1103/physrevlett.115.027401}}, volume = {{115}}, year = {{2015}}, } @inproceedings{6529, author = {{Yakovlev, D. R. and Warkentin, W. and Brunne, D. and Mund, J. and Pavlov, V. V. and Rodina, A. V. and Pisarev, R. V. and Bayer, M.}}, booktitle = {{Nonlinear Optics and Applications IX}}, editor = {{Bertolotti, Mario and Haus, Joseph W. and Zheltikov, Alexei M.}}, location = {{Prague, Czech Rep}}, publisher = {{SPIE}}, title = {{{Novel mechanisms of optical harmonic generation on excitons in semiconductors}}}, doi = {{10.1117/12.2185309}}, year = {{2015}}, } @article{1696, author = {{Bader, Christina A. and Zeuner, Franziska and Bader, Manuel H. W. and Zentgraf, Thomas and Meier, Cedrik}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, number = {{21}}, publisher = {{AIP Publishing}}, title = {{{Nonlinear optical sub-bandgap excitation of ZnO-based photonic resonators}}}, doi = {{10.1063/1.4936768}}, volume = {{118}}, year = {{2015}}, } @article{1698, author = {{Huang, Lingling and Mühlenbernd, Holger and Li, Xiaowei and Song, Xu and Bai, Benfeng and Wang, Yongtian and Zentgraf, Thomas}}, issn = {{0935-9648}}, journal = {{Advanced Materials}}, number = {{41}}, pages = {{6444--6449}}, publisher = {{Wiley-Blackwell}}, title = {{{Broadband Hybrid Holographic Multiplexing with Geometric Metasurfaces}}}, doi = {{10.1002/adma.201502541}}, volume = {{27}}, year = {{2015}}, } @article{1700, author = {{Zheng, Guoxing and Mühlenbernd, Holger and Kenney, Mitchell and Li, Guixin and Zentgraf, Thomas and Zhang, Shuang}}, issn = {{1748-3387}}, journal = {{Nature Nanotechnology}}, number = {{4}}, pages = {{308--312}}, publisher = {{Springer Nature}}, title = {{{Metasurface holograms reaching 80% efficiency}}}, doi = {{10.1038/nnano.2015.2}}, volume = {{10}}, year = {{2015}}, } @article{1461, author = {{Mühlenbernd, Holger and Georgi, Philip and Pholchai, Nitipat and Huang, Lingling and Li, Guixin and Zhang, Shuang and Zentgraf, Thomas}}, issn = {{2330-4022}}, journal = {{ACS Photonics}}, number = {{1}}, pages = {{124--129}}, publisher = {{American Chemical Society (ACS)}}, title = {{{Amplitude- and Phase-Controlled Surface Plasmon Polariton Excitation with Metasurfaces}}}, doi = {{10.1021/acsphotonics.5b00536}}, volume = {{3}}, year = {{2015}}, } @inproceedings{24290, abstract = {{The recent rapid development of silicon photonics technology has spurred the process of on-chip integration of all kinds of opto-electronic components. One of the most common components of such type is the opto-electrical receiver. The monolithic implementation of the receiver could potentially have lower power consumption, higher sensitivity and bandwidth due to very short diode to amplifier connection length, which has very low parasitic capacitance and series resistance. The SiGe photodiode itself is also very compact, thus lowering the junction capacitance and improving its bandwidth. Among the different optical communication systems, coherent transmission lately received a lot of attention due to the rising requirements of the optical link capacity, and it was shown that this particular approach could benefit greatly from the monolithic integration, since the major component required for the demodulation on the receiver side – 90° optical hybrid – could be implemented fully passive and directly on the same chip as the receiver itself, together with digital post-processing circuitry. Despite the initial complexity of the modulation scheme, advanced silicon photonics components like this optical hybrid could make coherent transmission attractive even for short-range optical links. I would like to present the actual designs, implementation and measurement results of 90° fully passive optical hybrids, implemented in the IHP SG25PIC (passive photonics IC) technology. One of the designs is based on 4x4 multimode interferometer (MMI). The other one is based on two separate 2x2 MMIs with additional delay element. The final designs didn’t require any additional tuning after fabrication and have shown sufficient precision and performance for a coherent system design. The results of this work were later used for the design of monolithic coherent receiver.}}, author = {{Gudyriev, Sergiy and Scheytt, Christoph}}, booktitle = {{Kleinheubacher Tagung 2015}}, pages = {{18}}, title = {{{Silicon photonics 90° optical hybrid design for coherent receivers}}}, year = {{2015}}, } @article{4332, abstract = {{LiTaO3 and LiNbO3 crystals are investigated here in a combined experimental and theoretical study that uses Raman spectroscopy in a complete set of scattering geometries and corresponding density-functional theory calculations to provide microscopic information on their vibrational properties. The Raman scattering efficiency is computed from first principles in order to univocally assign the measured Raman peaks to the calculated eigenvectors. Measured and calculated Raman spectra are shown to be in qualitative agreement and confirm the mode assignment by Margueron et al. [J. Appl. Phys. 111, 104105 (2012)], thus finally settling a long debate. While the two crystals show rather similar vibrational properties overall, the E-TO9 mode is markedly different in the two oxides. The deviations are explained by a different anion-cation bond type in LiTaO3 and LiNbO3 crystals.}}, author = {{Sanna, Simone and Neufeld, Sergej and Rüsing, Michael and Berth, Gerhard and Zrenner, Artur and Schmidt, Wolf Gero}}, issn = {{1098-0121}}, journal = {{Physical Review B}}, number = {{22}}, publisher = {{American Physical Society (APS)}}, title = {{{Raman scattering efficiency in LiTaO3 and LiNbO3 crystals}}}, doi = {{10.1103/physrevb.91.224302}}, volume = {{91}}, year = {{2015}}, }