@article{7700, author = {{Chen, Y. S. and Reuter, Dirk and Wieck, A. D. and Bacher, G.}}, issn = {{0031-9007}}, journal = {{Physical Review Letters}}, number = {{16}}, publisher = {{American Physical Society (APS)}}, title = {{{Dynamic Nuclear Spin Resonance inn-GaAs}}}, doi = {{10.1103/physrevlett.107.167601}}, volume = {{107}}, year = {{2011}}, } @article{7701, author = {{Spatzek, S. and Greilich, A. and Economou, Sophia E. and Varwig, S. and Schwan, A. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Reinecke, T. L. and Bayer, M.}}, issn = {{0031-9007}}, journal = {{Physical Review Letters}}, number = {{13}}, publisher = {{American Physical Society (APS)}}, title = {{{Optical Control of Coherent Interactions between Electron Spins in InGaAs Quantum Dots}}}, doi = {{10.1103/physrevlett.107.137402}}, volume = {{107}}, year = {{2011}}, } @article{7702, author = {{Spatzek, S. and Varwig, S. and Glazov, M. M. and Yugova, I. A. and Schwan, A. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Bayer, M.}}, issn = {{1098-0121}}, journal = {{Physical Review B}}, number = {{11}}, publisher = {{American Physical Society (APS)}}, title = {{{Generation and detection of mode-locked spin coherence in (In,Ga)As/GaAs quantum dots by laser pulses of long duration}}}, doi = {{10.1103/physrevb.84.115309}}, volume = {{84}}, year = {{2011}}, } @article{7703, author = {{Notthoff, Christian and Reuter, Dirk and Wieck, Andreas D. and Lorke, Axel}}, issn = {{1098-0121}}, journal = {{Physical Review B}}, number = {{3}}, publisher = {{American Physical Society (APS)}}, title = {{{Edge-induced magnetoplasmon excitation in a two-dimensional electron gas under quantum Hall conditions}}}, doi = {{10.1103/physrevb.84.035311}}, volume = {{84}}, year = {{2011}}, } @article{7704, author = {{Cherbunin, R. V. and Flisinski, K. and Gerlovin, I. Ya. and Ignatiev, I. V. and Kuznetsova, M. S. and Petrov, M. Yu. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Bayer, M.}}, issn = {{1098-0121}}, journal = {{Physical Review B}}, number = {{4}}, publisher = {{American Physical Society (APS)}}, title = {{{Resonant nuclear spin pumping in (In,Ga)As quantum dots}}}, doi = {{10.1103/physrevb.84.041304}}, volume = {{84}}, year = {{2011}}, } @article{7707, author = {{Schinner, G. J. and Schubert, E. and Stallhofer, M. P. and Kotthaus, J. P. and Schuh, D. and Rai, A. K. and Reuter, Dirk and Wieck, A. D. and Govorov, A. O.}}, issn = {{1098-0121}}, journal = {{Physical Review B}}, number = {{16}}, publisher = {{American Physical Society (APS)}}, title = {{{Electrostatically trapping indirect excitons in coupled InxGa1−xAs quantum wells}}}, doi = {{10.1103/physrevb.83.165308}}, volume = {{83}}, year = {{2011}}, } @article{7708, author = {{Sladkov, Maksym and Bakker, M. P. and Chaubal, A. U. and Reuter, Dirk and Wieck, A. D. and van der Wal, C. H.}}, issn = {{0034-6748}}, journal = {{Review of Scientific Instruments}}, number = {{4}}, publisher = {{AIP Publishing}}, title = {{{Polarization-preserving confocal microscope for optical experiments in a dilution refrigerator with high magnetic field}}}, doi = {{10.1063/1.3574217}}, volume = {{82}}, year = {{2011}}, } @article{7710, author = {{Buchholz, Sven S. and Kunze, Ulrich and Reuter, Dirk and Wieck, Andreas D. and Fischer, Saskia F.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{10}}, publisher = {{AIP Publishing}}, title = {{{Mode-filtered electron injection into a waveguide interferometer}}}, doi = {{10.1063/1.3563714}}, volume = {{98}}, year = {{2011}}, } @article{7711, author = {{Chen, Y. S. and Huang, J. and Reuter, Dirk and Ludwig, A. and Wieck, A. D. and Bacher, G.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{8}}, publisher = {{AIP Publishing}}, title = {{{Optically detected nuclear magnetic resonance in n-GaAs using an on-chip microcoil}}}, doi = {{10.1063/1.3553503}}, volume = {{98}}, year = {{2011}}, } @article{7712, author = {{Marquardt, B. and Geller, M. and Baxevanis, B. and Pfannkuche, D. and Wieck, A. D. and Reuter, Dirk and Lorke, A.}}, issn = {{2041-1723}}, journal = {{Nature Communications}}, number = {{1}}, publisher = {{Springer Nature}}, title = {{{Transport spectroscopy of non-equilibrium many-particle spin states in self-assembled quantum dots}}}, doi = {{10.1038/ncomms1205}}, volume = {{2}}, year = {{2011}}, } @article{7713, author = {{Jadczak, J and Bryja, L and Wójs, A and Bartsch, G and Yakovlev, D R and Bayer, M and Plochocka, P and Potemski, M and Reuter, Dirk and Wieck, A}}, issn = {{1742-6596}}, journal = {{Journal of Physics: Conference Series}}, publisher = {{IOP Publishing}}, title = {{{Strong temperature destabilization of free exciton recombination in a two-dimensional structures with hole gas}}}, doi = {{10.1088/1742-6596/334/1/012050}}, volume = {{334}}, year = {{2011}}, } @article{7714, author = {{Kurtze, H. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Bayer, M.}}, issn = {{1862-6351}}, journal = {{physica status solidi (c)}}, number = {{4}}, pages = {{1165--1168}}, publisher = {{Wiley}}, title = {{{Phonon-assisted exciton spin relaxation in (In,Ga)As/GaAs quantum dots}}}, doi = {{10.1002/pssc.201000791}}, volume = {{8}}, year = {{2011}}, } @article{7715, author = {{Lo, F-Y and Guo, J-Y and Ney, V and Ney, A and Chern, M-Y and Melnikov, A and Pezzagna, S and Reuter, Dirk and Wieck, A D and Massies, J}}, issn = {{1742-6596}}, journal = {{Journal of Physics: Conference Series}}, publisher = {{IOP Publishing}}, title = {{{Structural, optical, and magnetic properties of Ho-implanted GaN thin films}}}, doi = {{10.1088/1742-6596/266/1/012097}}, volume = {{266}}, year = {{2011}}, } @inproceedings{7716, author = {{Cerchez, M. and Tarasov, A. and Hugger, S. and Xu, Hengyi and Heinzel, T. and Zozoulenko, I. V. and Gasser-Szerer, U. and Reuter, Dirk and Wieck, A. D. and Ihm, Jisoon and Cheong, Hyeonsik}}, publisher = {{AIP}}, title = {{{Towards the quantized magnetic confinement in quantum wires}}}, doi = {{10.1063/1.3666392}}, year = {{2011}}, } @inproceedings{7717, author = {{Marquardt, Bastian and Geller, Martin and Baxevanis, Benjamin and Pfannkuche, Daniela and Wieck, Andreas D. and Reuter, Dirk and Lorke, Axel and Ihm, Jisoon and Cheong, Hyeonsik}}, publisher = {{AIP}}, title = {{{All-electrical transport spectroscopy of non-equilibrium many-particle states in self-assembled quantum dots}}}, doi = {{10.1063/1.3666398}}, year = {{2011}}, } @inproceedings{7718, author = {{van der Wal, C. H. and Sladkov, M. and Chaubal, A. U. and Bakker, M. P. and Onur, A. R. and Reuter, Dirk and Wieck, A. D. and Ihm, Jisoon and Cheong, Hyeonsik}}, publisher = {{AIP}}, title = {{{Electromagnetically induced transparency in low-doped n-GaAs}}}, doi = {{10.1063/1.3666734}}, year = {{2011}}, } @article{7719, author = {{Chen, Y. S. and Huang, J. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Bacher, G.}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, number = {{1}}, publisher = {{AIP Publishing}}, title = {{{Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil}}}, doi = {{10.1063/1.3530731}}, volume = {{109}}, year = {{2011}}, } @article{4544, abstract = {{The existence of localized vibrational modes both at the positive and at the negative LiNbO3 (0001) surface is demonstrated by means of first-principles calculations and Raman spectroscopy measurements. First, the phonon modes of the crystal bulk and of the (0001) surface are calculated within the density functional theory. In a second step, the Raman spectra of LiNbO3 bulk and of the two surfaces are measured. The phonon modes localized at the two surfaces are found to be substantially different, and are also found to differ from the bulk modes. The calculated and measured frequencies are in agreement within the error of the method. Raman spectroscopy is shown to be sensitive to differences between bulk and surface and between positive and negative surface. It represents therefore an alternative method to determine the surface polarity, which does not exploit the pyroelectric or piezoelectric properties of the material.}}, author = {{Sanna, S. and Berth, Gerhard and Hahn, W. and Widhalm, A. and Zrenner, Artur and Schmidt, W. G.}}, issn = {{0885-3010}}, journal = {{IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control}}, number = {{9}}, pages = {{1751--1756}}, publisher = {{Institute of Electrical and Electronics Engineers (IEEE)}}, title = {{{Vibrational properties of the LiNbO3 z-surfaces}}}, doi = {{10.1109/tuffc.2011.2012}}, volume = {{58}}, year = {{2011}}, } @article{4545, abstract = {{Laser irradiation damage in ZnTe epilayers was analyzed in situ by power-density-dependent and time-resolved micro-Raman spectroscopy. Damage by ablation or compound decomposition on the sample surface was revealed by the decrease of the ZnTe–nLO mode intensity with the increase of laser power density. The appearance of the peaks associated with the stronger crystalline-tellurium modes, tellurium aggregates and second-order Raman scattering at room temperature μ-Raman spectra was observed for higher power densities than 4.4 × 105 W cm−2. The Raman signal time transients of ZnTe–nLO and crystalline-tellurium modes reveal an exponential evolution of the laser irradiation damage and a fast formation of crystalline tellurium aggregates on the layer surface.}}, author = {{Wiedemeier, V and Berth, Gerhard and Zrenner, Artur and Larramendi, E M and Woggon, U and Lischka, K and Schikora, D}}, issn = {{0268-1242}}, journal = {{Semiconductor Science and Technology}}, number = {{10}}, publisher = {{IOP Publishing}}, title = {{{In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy}}}, doi = {{10.1088/0268-1242/26/10/105023}}, volume = {{26}}, year = {{2011}}, } @inproceedings{4546, abstract = {{Silicon oxynitride (SiON) layers for telecommunication device application are grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) for various gas compositions of SiH4, N2O and NH3. Processing and annealing effects on the oxynitride films were studied by Fourier Transform Infrared Spectroscopy (FTIR) and Atomic Force Microscopy (AFM) measurements. By reduction of the silane (SiH4) gas flow and enhancement of the PECVD deposition temperature, the absorption loss due to NH bands can be nearly completely erased. Furthermore the surface roughness can be reduced by decreasing the gas flow and rising the deposition temperature. First waveguide structures are introduced and their characterization is presented.}}, author = {{Frers, Torsten and Hett, Thomas and Hilleringmann, Ulrich and Berth, Gerhard and Widhalm, Alex and Zrenner, Artur}}, booktitle = {{2011 Semiconductor Conference Dresden}}, isbn = {{9781457704314}}, location = {{Dresden, Germany}}, publisher = {{IEEE}}, title = {{{Characterization of SiON integrated waveguides via FTIR and AFM measurements}}}, doi = {{10.1109/scd.2011.6068744}}, year = {{2011}}, }