@article{7711, author = {{Chen, Y. S. and Huang, J. and Reuter, Dirk and Ludwig, A. and Wieck, A. D. and Bacher, G.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{8}}, publisher = {{AIP Publishing}}, title = {{{Optically detected nuclear magnetic resonance in n-GaAs using an on-chip microcoil}}}, doi = {{10.1063/1.3553503}}, volume = {{98}}, year = {{2011}}, } @article{7712, author = {{Marquardt, B. and Geller, M. and Baxevanis, B. and Pfannkuche, D. and Wieck, A. D. and Reuter, Dirk and Lorke, A.}}, issn = {{2041-1723}}, journal = {{Nature Communications}}, number = {{1}}, publisher = {{Springer Nature}}, title = {{{Transport spectroscopy of non-equilibrium many-particle spin states in self-assembled quantum dots}}}, doi = {{10.1038/ncomms1205}}, volume = {{2}}, year = {{2011}}, } @article{7713, author = {{Jadczak, J and Bryja, L and Wójs, A and Bartsch, G and Yakovlev, D R and Bayer, M and Plochocka, P and Potemski, M and Reuter, Dirk and Wieck, A}}, issn = {{1742-6596}}, journal = {{Journal of Physics: Conference Series}}, publisher = {{IOP Publishing}}, title = {{{Strong temperature destabilization of free exciton recombination in a two-dimensional structures with hole gas}}}, doi = {{10.1088/1742-6596/334/1/012050}}, volume = {{334}}, year = {{2011}}, } @article{7714, author = {{Kurtze, H. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Bayer, M.}}, issn = {{1862-6351}}, journal = {{physica status solidi (c)}}, number = {{4}}, pages = {{1165--1168}}, publisher = {{Wiley}}, title = {{{Phonon-assisted exciton spin relaxation in (In,Ga)As/GaAs quantum dots}}}, doi = {{10.1002/pssc.201000791}}, volume = {{8}}, year = {{2011}}, } @article{7715, author = {{Lo, F-Y and Guo, J-Y and Ney, V and Ney, A and Chern, M-Y and Melnikov, A and Pezzagna, S and Reuter, Dirk and Wieck, A D and Massies, J}}, issn = {{1742-6596}}, journal = {{Journal of Physics: Conference Series}}, publisher = {{IOP Publishing}}, title = {{{Structural, optical, and magnetic properties of Ho-implanted GaN thin films}}}, doi = {{10.1088/1742-6596/266/1/012097}}, volume = {{266}}, year = {{2011}}, } @inproceedings{7716, author = {{Cerchez, M. and Tarasov, A. and Hugger, S. and Xu, Hengyi and Heinzel, T. and Zozoulenko, I. V. and Gasser-Szerer, U. and Reuter, Dirk and Wieck, A. D. and Ihm, Jisoon and Cheong, Hyeonsik}}, publisher = {{AIP}}, title = {{{Towards the quantized magnetic confinement in quantum wires}}}, doi = {{10.1063/1.3666392}}, year = {{2011}}, } @inproceedings{7717, author = {{Marquardt, Bastian and Geller, Martin and Baxevanis, Benjamin and Pfannkuche, Daniela and Wieck, Andreas D. and Reuter, Dirk and Lorke, Axel and Ihm, Jisoon and Cheong, Hyeonsik}}, publisher = {{AIP}}, title = {{{All-electrical transport spectroscopy of non-equilibrium many-particle states in self-assembled quantum dots}}}, doi = {{10.1063/1.3666398}}, year = {{2011}}, } @inproceedings{7718, author = {{van der Wal, C. H. and Sladkov, M. and Chaubal, A. U. and Bakker, M. P. and Onur, A. R. and Reuter, Dirk and Wieck, A. D. and Ihm, Jisoon and Cheong, Hyeonsik}}, publisher = {{AIP}}, title = {{{Electromagnetically induced transparency in low-doped n-GaAs}}}, doi = {{10.1063/1.3666734}}, year = {{2011}}, } @article{7719, author = {{Chen, Y. S. and Huang, J. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Bacher, G.}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, number = {{1}}, publisher = {{AIP Publishing}}, title = {{{Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil}}}, doi = {{10.1063/1.3530731}}, volume = {{109}}, year = {{2011}}, } @article{4544, abstract = {{The existence of localized vibrational modes both at the positive and at the negative LiNbO3 (0001) surface is demonstrated by means of first-principles calculations and Raman spectroscopy measurements. First, the phonon modes of the crystal bulk and of the (0001) surface are calculated within the density functional theory. In a second step, the Raman spectra of LiNbO3 bulk and of the two surfaces are measured. The phonon modes localized at the two surfaces are found to be substantially different, and are also found to differ from the bulk modes. The calculated and measured frequencies are in agreement within the error of the method. Raman spectroscopy is shown to be sensitive to differences between bulk and surface and between positive and negative surface. It represents therefore an alternative method to determine the surface polarity, which does not exploit the pyroelectric or piezoelectric properties of the material.}}, author = {{Sanna, S. and Berth, Gerhard and Hahn, W. and Widhalm, A. and Zrenner, Artur and Schmidt, W. G.}}, issn = {{0885-3010}}, journal = {{IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control}}, number = {{9}}, pages = {{1751--1756}}, publisher = {{Institute of Electrical and Electronics Engineers (IEEE)}}, title = {{{Vibrational properties of the LiNbO3 z-surfaces}}}, doi = {{10.1109/tuffc.2011.2012}}, volume = {{58}}, year = {{2011}}, } @article{4545, abstract = {{Laser irradiation damage in ZnTe epilayers was analyzed in situ by power-density-dependent and time-resolved micro-Raman spectroscopy. Damage by ablation or compound decomposition on the sample surface was revealed by the decrease of the ZnTe–nLO mode intensity with the increase of laser power density. The appearance of the peaks associated with the stronger crystalline-tellurium modes, tellurium aggregates and second-order Raman scattering at room temperature μ-Raman spectra was observed for higher power densities than 4.4 × 105 W cm−2. The Raman signal time transients of ZnTe–nLO and crystalline-tellurium modes reveal an exponential evolution of the laser irradiation damage and a fast formation of crystalline tellurium aggregates on the layer surface.}}, author = {{Wiedemeier, V and Berth, Gerhard and Zrenner, Artur and Larramendi, E M and Woggon, U and Lischka, K and Schikora, D}}, issn = {{0268-1242}}, journal = {{Semiconductor Science and Technology}}, number = {{10}}, publisher = {{IOP Publishing}}, title = {{{In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy}}}, doi = {{10.1088/0268-1242/26/10/105023}}, volume = {{26}}, year = {{2011}}, } @inproceedings{4546, abstract = {{Silicon oxynitride (SiON) layers for telecommunication device application are grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) for various gas compositions of SiH4, N2O and NH3. Processing and annealing effects on the oxynitride films were studied by Fourier Transform Infrared Spectroscopy (FTIR) and Atomic Force Microscopy (AFM) measurements. By reduction of the silane (SiH4) gas flow and enhancement of the PECVD deposition temperature, the absorption loss due to NH bands can be nearly completely erased. Furthermore the surface roughness can be reduced by decreasing the gas flow and rising the deposition temperature. First waveguide structures are introduced and their characterization is presented.}}, author = {{Frers, Torsten and Hett, Thomas and Hilleringmann, Ulrich and Berth, Gerhard and Widhalm, Alex and Zrenner, Artur}}, booktitle = {{2011 Semiconductor Conference Dresden}}, isbn = {{9781457704314}}, location = {{Dresden, Germany}}, publisher = {{IEEE}}, title = {{{Characterization of SiON integrated waveguides via FTIR and AFM measurements}}}, doi = {{10.1109/scd.2011.6068744}}, year = {{2011}}, } @article{7311, author = {{Soldat, Henning and Li, Mingyuan and Gerhardt, Nils C. and Hofmann, Martin R. and Ludwig, Arne and Ebbing, Astrid and Reuter, Dirk and Wieck, Andreas D. and Stromberg, Frank and Keune, Werner and Wende, Heiko}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{5}}, publisher = {{AIP Publishing}}, title = {{{Room temperature spin relaxation length in spin light-emitting diodes}}}, doi = {{10.1063/1.3622662}}, volume = {{99}}, year = {{2011}}, } @article{7335, author = {{Krenner, Hubert J. and Völk, Stefan and Schülein, Florian J. R. and Knall, Florian and Wixforth, Achim and Reuter, Dirk and Wieck, Andreas D. and Kim, Hyochul and Truong, Tuan A. and Petroff, Pierre M.}}, issn = {{1862-6351}}, journal = {{physica status solidi (c)}}, number = {{2}}, pages = {{407--410}}, publisher = {{Wiley}}, title = {{{Surface acoustic wave controlled carrier injection into self-assembled quantum dots and quantum posts}}}, doi = {{10.1002/pssc.201100236}}, volume = {{9}}, year = {{2011}}, } @article{4377, abstract = {{Confocal Raman spectroscopy was performed as an archetype imaging method to study the ferroelectric domain structure of periodically poled lithium niobate. More precisely, the linkage out of spatial resolution and spectral information proved itself as very useful. Here a specific modulation of the Raman lines by the local variation of polarity and a non-symmetric measuring-signal across the domain structure were found, which allows for imaging of domain boundaries as well as oppositely orientated domains. The high potential of this method is demonstrated by the visualization of the ferroelectric domain structures based on various phonon modes.}}, author = {{Berth, Gerhard and Hahn, Wjatscheslaw and Wiedemeier, Volker and Zrenner, Artur and Sanna, Simone and Schmidt, Wolf Gero}}, issn = {{0015-0193}}, journal = {{Ferroelectrics}}, keywords = {{Raman spectroscopy, ferroelectric domains, LiNbO3, confocal imaging}}, number = {{1}}, pages = {{44--48}}, publisher = {{Informa UK Limited}}, title = {{{Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy}}}, doi = {{10.1080/00150193.2011.594774}}, volume = {{420}}, year = {{2011}}, } @article{4378, abstract = {{Using a combined all-ultra-high-vacuum process employing lateral patterning with focused ion beams and molecular beam epitaxy, site-selective growth of single (In,Ga)As quantum dots is achieved. We have embedded such a layer of intentionally positioned quantum dots in the intrinsic region of a p-i-n junction so that the quantum dots can be driven electrically. In this contribution, we will present our results on the morphological properties of the ion-beam modified surface on which the quantum dot nucleation occurs together with a characterization of the electrical and optoelectronic properties. We will demonstrate that a single, individual quantum dot can directly be electrically addressed.}}, author = {{Mehta, Minisha and Reuter, Dirk and Wieck, Andreas D. and Michaelis de Vasconcellos, Steffen and Zrenner, Artur and Meier, Cedrik}}, issn = {{1862-6351}}, journal = {{physica status solidi (c)}}, keywords = {{molecular beam epitaxy, quantum dot, site control, electroluminescence}}, number = {{4}}, pages = {{1182--1185}}, publisher = {{Wiley}}, title = {{{Electrically driven intentionally positioned single quantum dot}}}, doi = {{10.1002/pssc.201000828}}, volume = {{8}}, year = {{2011}}, } @article{4379, abstract = {{Uniform mesoporous Si double layers are formed on 4 inch p-type < 100> wafers with an off orientation of 6º towards < 111> by means of electrochemical etching in ethanoic-based HF electrolytes. These substrates are of interest for the epitaxial growth of III–V compound semiconductor stacks on their top for the production of multi-junction solar cells and very thin electronic devices. We demonstrate transfer of porous layers after an annealing process in hydrogen atmosphere. Electron Back-Scatter Diffraction analysis confirms that the substrate orientation is conserved during the etching and annealing steps. Confocal μ-Raman spectroscopy analysis shows a decrease in the Raman signal intensity after etching and a subsequent increase after annealing while no shift is observed. By means of Atomic Force Microscopy, analysis the surface appearance after the etching and annealing steps can be visualized. The mean surface roughness varies during the process from 0.55 nm for the unprocessed wafers to 0.27 nm after etching and 0.78 nm after annealing. The decrease of average roughness after etching is caused by an electropolishing step prior to porous formation. Despite of slight increase of mean surface roughness after annealing the samples are still appropriate for high quality epitaxial growth and subsequent lift-off.}}, author = {{Garralaga Rojas, E. and Terheiden, B. and Plagwitz, H. and Hensen, J. and Wiedemeier, V. and Berth, Gerhard and Zrenner, Artur and Brendel, R.}}, issn = {{0040-6090}}, journal = {{Thin Solid Films}}, keywords = {{Porous Si, Layer transfer, Thin-film, Photovoltaics}}, number = {{1}}, pages = {{606--609}}, publisher = {{Elsevier BV}}, title = {{{Lift-off of mesoporous layers by electrochemical etching on Si (100) substrates with miscut of 6° off towards (111)}}}, doi = {{10.1016/j.tsf.2011.07.063}}, volume = {{520}}, year = {{2011}}, } @article{1723, author = {{Utikal, Tobias and Zentgraf, Thomas and Tikhodeev, Sergei G. and Lippitz, Markus and Giessen, Harald}}, issn = {{1098-0121}}, journal = {{Physical Review B}}, number = {{7}}, publisher = {{American Physical Society (APS)}}, title = {{{Tailoring the photonic band splitting in metallodielectric photonic crystal superlattices}}}, doi = {{10.1103/physrevb.84.075101}}, volume = {{84}}, year = {{2011}}, } @article{1724, author = {{Gharghi, Majid and Gladden, Christopher and Zentgraf, Thomas and Liu, Yongmin and Yin, Xiaobo and Valentine, Jason and Zhang, Xiang}}, issn = {{1530-6984}}, journal = {{Nano Letters}}, number = {{7}}, pages = {{2825--2828}}, publisher = {{American Chemical Society (ACS)}}, title = {{{A Carpet Cloak for Visible Light}}}, doi = {{10.1021/nl201189z}}, volume = {{11}}, year = {{2011}}, } @article{7495, author = {{Urbanski, Martin and Piegdon, Karoline A. and Meier, Cedrik and Kitzerow, Heinz-Siegfried}}, issn = {{0267-8292}}, journal = {{Liquid Crystals}}, number = {{4}}, pages = {{475--482}}, publisher = {{Informa UK Limited}}, title = {{{Investigations on the director field around microdisc resonators}}}, doi = {{10.1080/02678292.2011.552742}}, volume = {{38}}, year = {{2011}}, }