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A two-dimensional electron gas as a sensitive detector to observe the charge carrier dynamics of self-assembled QDs. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2010;42(10):2598-2601. doi:<a href=\"https://doi.org/10.1016/j.physe.2010.02.010\">10.1016/j.physe.2010.02.010</a>","chicago":"Marquardt, Bastian, Martin Geller, Axel Lorke, Dirk Reuter, and Andreas D. Wieck. “A Two-Dimensional Electron Gas as a Sensitive Detector to Observe the Charge Carrier Dynamics of Self-Assembled QDs.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i> 42, no. 10 (2010): 2598–2601. <a href=\"https://doi.org/10.1016/j.physe.2010.02.010\">https://doi.org/10.1016/j.physe.2010.02.010</a>.","ieee":"B. Marquardt, M. Geller, A. Lorke, D. Reuter, and A. D. Wieck, “A two-dimensional electron gas as a sensitive detector to observe the charge carrier dynamics of self-assembled QDs,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, vol. 42, no. 10, pp. 2598–2601, 2010.","apa":"Marquardt, B., Geller, M., Lorke, A., Reuter, D., &#38; Wieck, A. D. (2010). A two-dimensional electron gas as a sensitive detector to observe the charge carrier dynamics of self-assembled QDs. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, <i>42</i>(10), 2598–2601. <a href=\"https://doi.org/10.1016/j.physe.2010.02.010\">https://doi.org/10.1016/j.physe.2010.02.010</a>","mla":"Marquardt, Bastian, et al. “A Two-Dimensional Electron Gas as a Sensitive Detector to Observe the Charge Carrier Dynamics of Self-Assembled QDs.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, vol. 42, no. 10, Elsevier BV, 2010, pp. 2598–601, doi:<a href=\"https://doi.org/10.1016/j.physe.2010.02.010\">10.1016/j.physe.2010.02.010</a>."},"status":"public","page":"2598-2601","_id":"7987","publisher":"Elsevier BV","user_id":"42514","volume":42,"publication":"Physica E: Low-dimensional Systems and Nanostructures","issue":"10","date_created":"2019-02-21T14:39:07Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"title":"A two-dimensional electron gas as a sensitive detector to observe the charge carrier dynamics of self-assembled QDs","year":"2010","author":[{"full_name":"Marquardt, Bastian","first_name":"Bastian","last_name":"Marquardt"},{"last_name":"Geller","first_name":"Martin","full_name":"Geller, Martin"},{"first_name":"Axel","last_name":"Lorke","full_name":"Lorke, Axel"},{"last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763"},{"full_name":"Wieck, Andreas D.","first_name":"Andreas D.","last_name":"Wieck"}],"publication_identifier":{"issn":["1386-9477"]},"date_updated":"2022-01-06T07:03:48Z","publication_status":"published","intvolume":"        42","language":[{"iso":"eng"}],"doi":"10.1016/j.physe.2010.02.010"},{"date_created":"2019-02-21T14:39:56Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"publication":"Physical Review Letters","issue":"17","citation":{"bibtex":"@article{Lei_Notthoff_Peng_Reuter_Wieck_Bester_Lorke_2010, title={“Artificial Atoms” in Magnetic Fields: Wave-Function Shaping and Phase-Sensitive Tunneling}, volume={105}, DOI={<a href=\"https://doi.org/10.1103/physrevlett.105.176804\">10.1103/physrevlett.105.176804</a>}, number={17}, journal={Physical Review Letters}, publisher={American Physical Society (APS)}, author={Lei, Wen and Notthoff, Christian and Peng, Jie and Reuter, Dirk and Wieck, Andreas and Bester, Gabriel and Lorke, Axel}, year={2010} }","ama":"Lei W, Notthoff C, Peng J, et al. “Artificial Atoms” in Magnetic Fields: Wave-Function Shaping and Phase-Sensitive Tunneling. <i>Physical Review Letters</i>. 2010;105(17). doi:<a href=\"https://doi.org/10.1103/physrevlett.105.176804\">10.1103/physrevlett.105.176804</a>","mla":"Lei, Wen, et al. “‘Artificial Atoms’ in Magnetic Fields: Wave-Function Shaping and Phase-Sensitive Tunneling.” <i>Physical Review Letters</i>, vol. 105, no. 17, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevlett.105.176804\">10.1103/physrevlett.105.176804</a>.","chicago":"Lei, Wen, Christian Notthoff, Jie Peng, Dirk Reuter, Andreas Wieck, Gabriel Bester, and Axel Lorke. “‘Artificial Atoms’ in Magnetic Fields: Wave-Function Shaping and Phase-Sensitive Tunneling.” <i>Physical Review Letters</i> 105, no. 17 (2010). <a href=\"https://doi.org/10.1103/physrevlett.105.176804\">https://doi.org/10.1103/physrevlett.105.176804</a>.","short":"W. Lei, C. Notthoff, J. Peng, D. Reuter, A. Wieck, G. Bester, A. Lorke, Physical Review Letters 105 (2010).","ieee":"W. Lei <i>et al.</i>, “‘Artificial Atoms’ in Magnetic Fields: Wave-Function Shaping and Phase-Sensitive Tunneling,” <i>Physical Review Letters</i>, vol. 105, no. 17, 2010.","apa":"Lei, W., Notthoff, C., Peng, J., Reuter, D., Wieck, A., Bester, G., &#38; Lorke, A. (2010). “Artificial Atoms” in Magnetic Fields: Wave-Function Shaping and Phase-Sensitive Tunneling. <i>Physical Review Letters</i>, <i>105</i>(17). <a href=\"https://doi.org/10.1103/physrevlett.105.176804\">https://doi.org/10.1103/physrevlett.105.176804</a>"},"_id":"7988","publisher":"American Physical Society (APS)","language":[{"iso":"eng"}],"doi":"10.1103/physrevlett.105.176804","user_id":"42514","volume":105,"title":"“Artificial Atoms” in Magnetic Fields: Wave-Function Shaping and Phase-Sensitive Tunneling","status":"public","year":"2010","author":[{"first_name":"Wen","last_name":"Lei","full_name":"Lei, Wen"},{"full_name":"Notthoff, Christian","last_name":"Notthoff","first_name":"Christian"},{"last_name":"Peng","first_name":"Jie","full_name":"Peng, Jie"},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"first_name":"Andreas","last_name":"Wieck","full_name":"Wieck, Andreas"},{"first_name":"Gabriel","last_name":"Bester","full_name":"Bester, Gabriel"},{"last_name":"Lorke","first_name":"Axel","full_name":"Lorke, Axel"}],"publication_identifier":{"issn":["0031-9007","1079-7114"]},"date_updated":"2022-01-06T07:03:48Z","publication_status":"published","intvolume":"       105"},{"issue":"16","publication":"Physical Review B","citation":{"apa":"Kreisbeck, C., Kramer, T., Buchholz, S. 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Wieck, Physical Review B 82 (2010).","mla":"Kreisbeck, Christoph, et al. “Phase Shifts and Phaseπjumps in Four-Terminal Waveguide Aharonov-Bohm Interferometers.” <i>Physical Review B</i>, vol. 82, no. 16, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.82.165329\">10.1103/physrevb.82.165329</a>.","ama":"Kreisbeck C, Kramer T, Buchholz SS, et al. 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Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, C. Meier, Applied Physics Letters 97 (2010).","chicago":"Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” <i>Applied Physics Letters</i> 97, no. 14 (2010). <a href=\"https://doi.org/10.1063/1.3488812\">https://doi.org/10.1063/1.3488812</a>.","apa":"Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner, A., &#38; Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. <i>Applied Physics Letters</i>, <i>97</i>(14). <a href=\"https://doi.org/10.1063/1.3488812\">https://doi.org/10.1063/1.3488812</a>","ieee":"M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. 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D. and Michaelis de Vasconcellos, S. and Zrenner, A. and Meier, C.}, year={2010} }","mla":"Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” <i>Applied Physics Letters</i>, vol. 97, no. 14, 143101, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>."},"status":"public","volume":97,"user_id":"42514","_id":"7990","publisher":"AIP Publishing","issue":"14","publication":"Applied Physics Letters","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","date_created":"2019-02-21T14:41:19Z","intvolume":"        97","date_updated":"2022-01-06T07:03:48Z","publication_status":"published","author":[{"last_name":"Mehta","first_name":"M.","full_name":"Mehta, M."},{"last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763"},{"full_name":"Wieck, A. D.","first_name":"A. 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Capacitance-voltage spectroscopy on InAs quantum dot valence band states in tilted magnetic fields. <i>Journal of Physics: Conference Series</i>. 2010;245. doi:<a href=\"https://doi.org/10.1088/1742-6596/245/1/012043\">10.1088/1742-6596/245/1/012043</a>","bibtex":"@article{Reuter_Roescu_Zeitler_Maan_Wieck_2010, title={Capacitance-voltage spectroscopy on InAs quantum dot valence band states in tilted magnetic fields}, volume={245}, DOI={<a href=\"https://doi.org/10.1088/1742-6596/245/1/012043\">10.1088/1742-6596/245/1/012043</a>}, number={012043}, journal={Journal of Physics: Conference Series}, publisher={IOP Publishing}, author={Reuter, Dirk and Roescu, R and Zeitler, U and Maan, J C and Wieck, A D}, year={2010} }","apa":"Reuter, D., Roescu, R., Zeitler, U., Maan, J. C., &#38; Wieck, A. D. (2010). Capacitance-voltage spectroscopy on InAs quantum dot valence band states in tilted magnetic fields. <i>Journal of Physics: Conference Series</i>, <i>245</i>. <a href=\"https://doi.org/10.1088/1742-6596/245/1/012043\">https://doi.org/10.1088/1742-6596/245/1/012043</a>","ieee":"D. Reuter, R. Roescu, U. Zeitler, J. C. Maan, and A. D. Wieck, “Capacitance-voltage spectroscopy on InAs quantum dot valence band states in tilted magnetic fields,” <i>Journal of Physics: Conference Series</i>, vol. 245, 2010.","chicago":"Reuter, Dirk, R Roescu, U Zeitler, J C Maan, and A D Wieck. “Capacitance-Voltage Spectroscopy on InAs Quantum Dot Valence Band States in Tilted Magnetic Fields.” <i>Journal of Physics: Conference Series</i> 245 (2010). <a href=\"https://doi.org/10.1088/1742-6596/245/1/012043\">https://doi.org/10.1088/1742-6596/245/1/012043</a>.","short":"D. Reuter, R. Roescu, U. Zeitler, J.C. Maan, A.D. Wieck, Journal of Physics: Conference Series 245 (2010)."},"publication":"Journal of Physics: Conference Series","volume":245,"user_id":"42514","doi":"10.1088/1742-6596/245/1/012043","language":[{"iso":"eng"}],"_id":"7991","publisher":"IOP Publishing","article_number":"012043","intvolume":"       245","publication_status":"published","date_updated":"2022-01-06T07:03:48Z","author":[{"id":"37763","last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk"},{"last_name":"Roescu","first_name":"R","full_name":"Roescu, R"},{"full_name":"Zeitler, U","first_name":"U","last_name":"Zeitler"},{"full_name":"Maan, J C","first_name":"J C","last_name":"Maan"},{"full_name":"Wieck, A D","last_name":"Wieck","first_name":"A D"}],"publication_identifier":{"issn":["1742-6596"]},"title":"Capacitance-voltage spectroscopy on InAs quantum dot valence band states in tilted magnetic fields","status":"public","year":"2010"},{"_id":"7992","publisher":"IOP Publishing","user_id":"42514","volume":12,"status":"public","citation":{"chicago":"Rizo, P J, A Pugzlys, A Slachter, S Z Denega, Dirk Reuter, A D Wieck, P H M van Loosdrecht, and C H van der Wal. “Optical Probing of Spin Dynamics of Two-Dimensional and Bulk Electrons in a GaAs/AlGaAs Heterojunction System.” <i>New Journal of Physics</i> 12, no. 11 (2010). <a href=\"https://doi.org/10.1088/1367-2630/12/11/113040\">https://doi.org/10.1088/1367-2630/12/11/113040</a>.","short":"P.J. Rizo, A. Pugzlys, A. Slachter, S.Z. Denega, D. Reuter, A.D. Wieck, P.H.M. van Loosdrecht, C.H. van der Wal, New Journal of Physics 12 (2010).","apa":"Rizo, P. J., Pugzlys, A., Slachter, A., Denega, S. Z., Reuter, D., Wieck, A. D., … van der Wal, C. H. (2010). Optical probing of spin dynamics of two-dimensional and bulk electrons in a GaAs/AlGaAs heterojunction system. <i>New Journal of Physics</i>, <i>12</i>(11). <a href=\"https://doi.org/10.1088/1367-2630/12/11/113040\">https://doi.org/10.1088/1367-2630/12/11/113040</a>","ieee":"P. J. Rizo <i>et al.</i>, “Optical probing of spin dynamics of two-dimensional and bulk electrons in a GaAs/AlGaAs heterojunction system,” <i>New Journal of Physics</i>, vol. 12, no. 11, 2010.","ama":"Rizo PJ, Pugzlys A, Slachter A, et al. Optical probing of spin dynamics of two-dimensional and bulk electrons in a GaAs/AlGaAs heterojunction system. <i>New Journal of Physics</i>. 2010;12(11). doi:<a href=\"https://doi.org/10.1088/1367-2630/12/11/113040\">10.1088/1367-2630/12/11/113040</a>","bibtex":"@article{Rizo_Pugzlys_Slachter_Denega_Reuter_Wieck_van Loosdrecht_van der Wal_2010, title={Optical probing of spin dynamics of two-dimensional and bulk electrons in a GaAs/AlGaAs heterojunction system}, volume={12}, DOI={<a href=\"https://doi.org/10.1088/1367-2630/12/11/113040\">10.1088/1367-2630/12/11/113040</a>}, number={11113040}, journal={New Journal of Physics}, publisher={IOP Publishing}, author={Rizo, P J and Pugzlys, A and Slachter, A and Denega, S Z and Reuter, Dirk and Wieck, A D and van Loosdrecht, P H M and van der Wal, C H}, year={2010} }","mla":"Rizo, P. J., et al. “Optical Probing of Spin Dynamics of Two-Dimensional and Bulk Electrons in a GaAs/AlGaAs Heterojunction System.” <i>New Journal of Physics</i>, vol. 12, no. 11, 113040, IOP Publishing, 2010, doi:<a href=\"https://doi.org/10.1088/1367-2630/12/11/113040\">10.1088/1367-2630/12/11/113040</a>."},"article_number":"113040","language":[{"iso":"eng"}],"doi":"10.1088/1367-2630/12/11/113040","year":"2010","title":"Optical probing of spin dynamics of two-dimensional and bulk electrons in a GaAs/AlGaAs heterojunction system","author":[{"full_name":"Rizo, P J","first_name":"P J","last_name":"Rizo"},{"full_name":"Pugzlys, A","first_name":"A","last_name":"Pugzlys"},{"full_name":"Slachter, A","first_name":"A","last_name":"Slachter"},{"full_name":"Denega, S Z","first_name":"S Z","last_name":"Denega"},{"full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk","id":"37763"},{"last_name":"Wieck","first_name":"A D","full_name":"Wieck, A D"},{"full_name":"van Loosdrecht, P H M","first_name":"P H M","last_name":"van Loosdrecht"},{"first_name":"C H","last_name":"van der Wal","full_name":"van der Wal, C H"}],"publication_identifier":{"issn":["1367-2630"]},"publication_status":"published","date_updated":"2022-01-06T07:03:48Z","intvolume":"        12","date_created":"2019-02-21T14:42:45Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"publication":"New Journal of Physics","issue":"11"},{"citation":{"bibtex":"@article{Herres-Pawlis_Berth_Wiedemeier_Schmidt_Zrenner_Warnecke_2010, title={Oxygen sensing by fluorescence quenching of [Cu(btmgp)I]}, volume={130}, DOI={<a href=\"https://doi.org/10.1016/j.jlumin.2010.05.012\">10.1016/j.jlumin.2010.05.012</a>}, number={10}, journal={Journal of Luminescence}, publisher={Elsevier BV}, author={Herres-Pawlis, Sonja and Berth, Gerhard and Wiedemeier, Volker and Schmidt, Ludger and Zrenner, Artur and Warnecke, Hans-Joachim}, year={2010}, pages={1958–1962} }","chicago":"Herres-Pawlis, Sonja, Gerhard Berth, Volker Wiedemeier, Ludger Schmidt, Artur Zrenner, and Hans-Joachim Warnecke. “Oxygen Sensing by Fluorescence Quenching of [Cu(Btmgp)I].” <i>Journal of Luminescence</i> 130, no. 10 (2010): 1958–62. <a href=\"https://doi.org/10.1016/j.jlumin.2010.05.012\">https://doi.org/10.1016/j.jlumin.2010.05.012</a>.","short":"S. Herres-Pawlis, G. Berth, V. Wiedemeier, L. Schmidt, A. Zrenner, H.-J. Warnecke, Journal of Luminescence 130 (2010) 1958–1962.","ama":"Herres-Pawlis S, Berth G, Wiedemeier V, Schmidt L, Zrenner A, Warnecke H-J. Oxygen sensing by fluorescence quenching of [Cu(btmgp)I]. <i>Journal of Luminescence</i>. 2010;130(10):1958-1962. doi:<a href=\"https://doi.org/10.1016/j.jlumin.2010.05.012\">10.1016/j.jlumin.2010.05.012</a>","ieee":"S. Herres-Pawlis, G. Berth, V. Wiedemeier, L. Schmidt, A. Zrenner, and H.-J. Warnecke, “Oxygen sensing by fluorescence quenching of [Cu(btmgp)I],” <i>Journal of Luminescence</i>, vol. 130, no. 10, pp. 1958–1962, 2010.","mla":"Herres-Pawlis, Sonja, et al. “Oxygen Sensing by Fluorescence Quenching of [Cu(Btmgp)I].” <i>Journal of Luminescence</i>, vol. 130, no. 10, Elsevier BV, 2010, pp. 1958–62, doi:<a href=\"https://doi.org/10.1016/j.jlumin.2010.05.012\">10.1016/j.jlumin.2010.05.012</a>.","apa":"Herres-Pawlis, S., Berth, G., Wiedemeier, V., Schmidt, L., Zrenner, A., &#38; Warnecke, H.-J. (2010). Oxygen sensing by fluorescence quenching of [Cu(btmgp)I]. <i>Journal of Luminescence</i>, <i>130</i>(10), 1958–1962. <a href=\"https://doi.org/10.1016/j.jlumin.2010.05.012\">https://doi.org/10.1016/j.jlumin.2010.05.012</a>"},"_id":"4548","publisher":"Elsevier BV","page":"1958-1962","volume":130,"user_id":"49428","status":"public","date_created":"2018-09-20T12:31:16Z","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"keyword":["Copper Oxygen Fluorescence quenching N donor ligands"],"type":"journal_article","issue":"10","publication":"Journal of Luminescence","abstract":[{"lang":"eng","text":"A fluorescence study of acetonitrile solutions of bis(tetramethylguanidine)propane, copper(I)-iodide and [Cu(btmgp)I] was performed and the chemical reaction of the latter species with O2 was investigated at room temperature. The actual quenching process via O2 gassing was studied and an exponential dependence of the fluorescence intensity with respect to the complex concentration was observed.\r\nFurthermore the survey was deepened on time resolved fluorescence properties of solved [Cu(btmgp)I] in a wider concentration range. The applicability of this complex for O2 sensing inside a microreactor system was proven by confocal fluorescence measurements. It was shown that the investigated system can be used for oxygen sensing in the copper concentration range from 10−2 to 10−9 mol/l."}],"language":[{"iso":"eng"}],"doi":"10.1016/j.jlumin.2010.05.012","publication_identifier":{"issn":["0022-2313"]},"author":[{"last_name":"Herres-Pawlis","first_name":"Sonja","full_name":"Herres-Pawlis, Sonja"},{"full_name":"Berth, Gerhard","first_name":"Gerhard","last_name":"Berth","id":"53"},{"full_name":"Wiedemeier, Volker","first_name":"Volker","last_name":"Wiedemeier"},{"full_name":"Schmidt, Ludger","last_name":"Schmidt","first_name":"Ludger"},{"full_name":"Zrenner, Artur","orcid":"0000-0002-5190-0944","last_name":"Zrenner","first_name":"Artur","id":"606"},{"first_name":"Hans-Joachim","last_name":"Warnecke","full_name":"Warnecke, Hans-Joachim"}],"year":"2010","title":"Oxygen sensing by fluorescence quenching of [Cu(btmgp)I]","intvolume":"       130","article_type":"original","date_updated":"2022-01-06T07:01:09Z","publication_status":"published"},{"citation":{"mla":"Larramendi, E. M., et al. “Intensity Enhancement of Te Raman Modes by Laser Damage in ZnTe Epilayers.” <i>Semiconductor Science and Technology</i>, vol. 25, no. 7, 075003, IOP Publishing, 2010, doi:<a href=\"https://doi.org/10.1088/0268-1242/25/7/075003\">10.1088/0268-1242/25/7/075003</a>.","bibtex":"@article{Larramendi_Berth_Wiedemeier_Hüsch_Zrenner_Woggon_Tschumak_Lischka_Schikora_2010, title={Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers}, volume={25}, DOI={<a href=\"https://doi.org/10.1088/0268-1242/25/7/075003\">10.1088/0268-1242/25/7/075003</a>}, number={7075003}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Larramendi, E M and Berth, Gerhard and Wiedemeier, V and Hüsch, K-P and Zrenner, Artur and Woggon, U and Tschumak, E and Lischka, K and Schikora, D}, year={2010} }","ama":"Larramendi EM, Berth G, Wiedemeier V, et al. Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers. <i>Semiconductor Science and Technology</i>. 2010;25(7). doi:<a href=\"https://doi.org/10.1088/0268-1242/25/7/075003\">10.1088/0268-1242/25/7/075003</a>","ieee":"E. M. Larramendi <i>et al.</i>, “Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers,” <i>Semiconductor Science and Technology</i>, vol. 25, no. 7, 2010.","apa":"Larramendi, E. M., Berth, G., Wiedemeier, V., Hüsch, K.-P., Zrenner, A., Woggon, U., … Schikora, D. (2010). Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers. <i>Semiconductor Science and Technology</i>, <i>25</i>(7). <a href=\"https://doi.org/10.1088/0268-1242/25/7/075003\">https://doi.org/10.1088/0268-1242/25/7/075003</a>","short":"E.M. Larramendi, G. Berth, V. Wiedemeier, K.-P. Hüsch, A. Zrenner, U. Woggon, E. Tschumak, K. Lischka, D. Schikora, Semiconductor Science and Technology 25 (2010).","chicago":"Larramendi, E M, Gerhard Berth, V Wiedemeier, K-P Hüsch, Artur Zrenner, U Woggon, E Tschumak, K Lischka, and D Schikora. “Intensity Enhancement of Te Raman Modes by Laser Damage in ZnTe Epilayers.” <i>Semiconductor Science and Technology</i> 25, no. 7 (2010). <a href=\"https://doi.org/10.1088/0268-1242/25/7/075003\">https://doi.org/10.1088/0268-1242/25/7/075003</a>."},"_id":"4549","publisher":"IOP Publishing","volume":25,"user_id":"49428","status":"public","date_created":"2018-09-20T12:35:35Z","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"type":"journal_article","publication":"Semiconductor Science and Technology","issue":"7","abstract":[{"text":"Damage caused by laser irradiation on the surface of ZnTe epilayers was studied by micro-Raman and atomic force microscopy (AFM). ZnTe LO-phonon overtones up to four order and TO + (n − 1)LO zone-center phonons were observed in the resonant micro-Raman spectra at room temperature. Discrepancies in the literature regarding the origin of two features observed at low frequencies around 120 and 140 cm−1 in the Raman spectrum of ZnTe are discussed and resolved. These Raman peaks were not detected by using a low excitation laser power density on a Zn-terminated ZnTe surface; however, with the increase of the laser power density they were found to arise irreversibly. The correspondence of these peaks in a wave number with the strongest Raman peaks of the crystalline tellurium phase and the intensity enhancement behavior with the laser power in a similar way as for CdTe strongly suggests the formation of crystalline tellurium aggregates on the layer surface due to laser irradiation damage. AFM data reveal the occurrence of laser ablation on the ZnTe surface even though the surface temperature of the sample is below the melting point.","lang":"eng"}],"language":[{"iso":"eng"}],"article_number":"075003","doi":"10.1088/0268-1242/25/7/075003","publication_identifier":{"issn":["0268-1242","1361-6641"]},"author":[{"last_name":"Larramendi","first_name":"E M","full_name":"Larramendi, E M"},{"full_name":"Berth, Gerhard","last_name":"Berth","first_name":"Gerhard","id":"53"},{"first_name":"V","last_name":"Wiedemeier","full_name":"Wiedemeier, V"},{"last_name":"Hüsch","first_name":"K-P","full_name":"Hüsch, K-P"},{"last_name":"Zrenner","first_name":"Artur","orcid":"0000-0002-5190-0944","full_name":"Zrenner, Artur","id":"606"},{"last_name":"Woggon","first_name":"U","full_name":"Woggon, U"},{"last_name":"Tschumak","first_name":"E","full_name":"Tschumak, E"},{"full_name":"Lischka, K","last_name":"Lischka","first_name":"K"},{"first_name":"D","last_name":"Schikora","full_name":"Schikora, D"}],"title":"Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers","year":"2010","intvolume":"        25","article_type":"original","date_updated":"2022-01-06T07:01:09Z","publication_status":"published"},{"_id":"4550","publisher":"AIP Publishing","volume":97,"user_id":"20798","status":"public","citation":{"bibtex":"@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010, title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}, volume={97}, DOI={<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>}, number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, Artur and Meier, Cedrik}, year={2010} }","ama":"Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. <i>Applied Physics Letters</i>. 2010;97(14). doi:<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>","mla":"Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” <i>Applied Physics Letters</i>, vol. 97, no. 14, 143101, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>.","chicago":"Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, Artur Zrenner, and Cedrik Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” <i>Applied Physics Letters</i> 97, no. 14 (2010). <a href=\"https://doi.org/10.1063/1.3488812\">https://doi.org/10.1063/1.3488812</a>.","short":"M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, C. Meier, Applied Physics Letters 97 (2010).","ieee":"M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode,” <i>Applied Physics Letters</i>, vol. 97, no. 14, 2010.","apa":"Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner, A., &#38; Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. <i>Applied Physics Letters</i>, <i>97</i>(14). <a href=\"https://doi.org/10.1063/1.3488812\">https://doi.org/10.1063/1.3488812</a>"},"language":[{"iso":"eng"}],"article_number":"143101","doi":"10.1063/1.3488812","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"full_name":"Mehta, M.","last_name":"Mehta","first_name":"M."},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"full_name":"Wieck, A. D.","first_name":"A. D.","last_name":"Wieck"},{"last_name":"Michaelis de Vasconcellos","first_name":"S.","full_name":"Michaelis de Vasconcellos, S."},{"id":"606","last_name":"Zrenner","orcid":"0000-0002-5190-0944","first_name":"Artur","full_name":"Zrenner, Artur"},{"id":"20798","full_name":"Meier, Cedrik","last_name":"Meier","first_name":"Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572"}],"year":"2010","title":"An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode","article_type":"original","intvolume":"        97","publication_status":"published","date_updated":"2022-01-06T07:01:09Z","date_created":"2018-09-20T12:38:51Z","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"287"}],"type":"journal_article","publication":"Applied Physics Letters","issue":"14","abstract":[{"lang":"eng","text":"We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski–Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices."}]},{"volume":42,"user_id":"20798","_id":"4551","publisher":"Elsevier BV","page":"2749-2752","status":"public","citation":{"ama":"Mehta M, Reuter D, Melnikov A, et al. Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2010;42(10):2749-2752. doi:<a href=\"https://doi.org/10.1016/j.physe.2009.12.053\">10.1016/j.physe.2009.12.053</a>","bibtex":"@article{Mehta_Reuter_Melnikov_Wieck_Michaelis de Vasconcellos_Baumgarten_Zrenner_Meier_2010, title={Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode}, volume={42}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2009.12.053\">10.1016/j.physe.2009.12.053</a>}, number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures}, publisher={Elsevier BV}, author={Mehta, Minisha and Reuter, Dirk and Melnikov, Alexander and Wieck, Andreas D. and Michaelis de Vasconcellos, Steffen and Baumgarten, Tim and Zrenner, Artur and Meier, Cedrik}, year={2010}, pages={2749–2752} }","mla":"Mehta, Minisha, et al. “Intentionally Positioned Self-Assembled InAs Quantum Dots in an Electroluminescent p–i–n Junction Diode.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, vol. 42, no. 10, Elsevier BV, 2010, pp. 2749–52, doi:<a href=\"https://doi.org/10.1016/j.physe.2009.12.053\">10.1016/j.physe.2009.12.053</a>.","short":"M. Mehta, D. Reuter, A. Melnikov, A.D. Wieck, S. Michaelis de Vasconcellos, T. Baumgarten, A. Zrenner, C. Meier, Physica E: Low-Dimensional Systems and Nanostructures 42 (2010) 2749–2752.","chicago":"Mehta, Minisha, Dirk Reuter, Alexander Melnikov, Andreas D. Wieck, Steffen Michaelis de Vasconcellos, Tim Baumgarten, Artur Zrenner, and Cedrik Meier. “Intentionally Positioned Self-Assembled InAs Quantum Dots in an Electroluminescent p–i–n Junction Diode.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i> 42, no. 10 (2010): 2749–52. <a href=\"https://doi.org/10.1016/j.physe.2009.12.053\">https://doi.org/10.1016/j.physe.2009.12.053</a>.","apa":"Mehta, M., Reuter, D., Melnikov, A., Wieck, A. D., Michaelis de Vasconcellos, S., Baumgarten, T., … Meier, C. (2010). Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, <i>42</i>(10), 2749–2752. <a href=\"https://doi.org/10.1016/j.physe.2009.12.053\">https://doi.org/10.1016/j.physe.2009.12.053</a>","ieee":"M. Mehta <i>et al.</i>, “Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, vol. 42, no. 10, pp. 2749–2752, 2010."},"doi":"10.1016/j.physe.2009.12.053","language":[{"iso":"eng"}],"intvolume":"        42","article_type":"original","date_updated":"2022-01-06T07:01:09Z","publication_status":"published","publication_identifier":{"issn":["1386-9477"]},"author":[{"full_name":"Mehta, Minisha","last_name":"Mehta","first_name":"Minisha"},{"id":"37763","last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk"},{"full_name":"Melnikov, Alexander","first_name":"Alexander","last_name":"Melnikov"},{"full_name":"Wieck, Andreas D.","last_name":"Wieck","first_name":"Andreas D."},{"full_name":"Michaelis de Vasconcellos, Steffen","first_name":"Steffen","last_name":"Michaelis de Vasconcellos"},{"last_name":"Baumgarten","first_name":"Tim","full_name":"Baumgarten, Tim"},{"id":"606","last_name":"Zrenner","first_name":"Artur","orcid":"0000-0002-5190-0944","full_name":"Zrenner, Artur"},{"id":"20798","full_name":"Meier, Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier","first_name":"Cedrik"}],"year":"2010","title":"Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"287"}],"type":"journal_article","keyword":["Molecular beam epitaxy","Focused ion beam","Self-assembled quantum dot","Electroluminescence"],"date_created":"2018-09-20T12:42:40Z","abstract":[{"text":"An intentional positioning of optically active quantum dots using site-selective growth by a combination of molecular beam epitaxy (MBE) and focused ion beam (FIB) implantation in an all-ultra-high-vacuum (UHV) setup has been successfully demonstrated. A square array of periodic holes on GaAs substrate was fabricated with FIB of 30 keV ions followed by an in situ annealing step. Subsequently, the patterned holes were overgrown with an optimized amount of InAs in order to achieve site-selective growth of the QDs on the patterned holes. Under well-optimized conditions, a selectivity of single quantum dot growth in the patterned holes of 52% was achieved. Thereafter, carrier injection and subsequent radiative recombination from the positioned InAs/GaAs self-assembled QDs was investigated by embedding the QDs in the intrinsic part of a GaAs-based p–i–n junction device. Electroluminescence spectra taken at 77 K show interband transitions up to the fifth excited state from the QDs.","lang":"eng"}],"publication":"Physica E: Low-dimensional Systems and Nanostructures","issue":"10"},{"department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"keyword":["CdSe/ZnSe quantum dots","Photodiode","Quantum confined Stark Effect","Photocurrent","II–VI Semiconductors"],"type":"journal_article","date_created":"2018-09-20T12:45:46Z","abstract":[{"text":"Here we report on investigations on CdSe quantum dots incorporated in ZnSe based Schottky photodiodes with near-field shadow masks. Photoluminescence and photocurrent of individual quantum dots were studied as a function of the applied bias voltage. The exciton energy of the quantum dot ground state transition was shifted to the excitation energy by using the Stark effect tuning via an external bias voltage. Under the condition of resonance with the laser excitation energy we observed a resonant photocurrent signal due to the tunnelling of carriers out of the quantum dots at electric fields above 500 kV/cm.","lang":"eng"}],"issue":"10","publication":"Physica E: Low-dimensional Systems and Nanostructures","doi":"10.1016/j.physe.2010.01.013","language":[{"iso":"eng"}],"article_type":"original","intvolume":"        42","publication_status":"published","date_updated":"2022-01-06T07:01:09Z","author":[{"full_name":"Panfilova, M.","last_name":"Panfilova","first_name":"M."},{"first_name":"S.","last_name":"Michaelis de Vasconcellos","full_name":"Michaelis de Vasconcellos, S."},{"last_name":"Pawlis","first_name":"A.","full_name":"Pawlis, A."},{"first_name":"K.","last_name":"Lischka","full_name":"Lischka, K."},{"orcid":"0000-0002-5190-0944","first_name":"Artur","last_name":"Zrenner","full_name":"Zrenner, Artur","id":"606"}],"publication_identifier":{"issn":["1386-9477"]},"year":"2010","title":"Resonant photocurrent-spectroscopy of individual CdSe quantum dots","citation":{"mla":"Panfilova, M., et al. “Resonant Photocurrent-Spectroscopy of Individual CdSe Quantum Dots.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, vol. 42, no. 10, Elsevier BV, 2010, pp. 2521–23, doi:<a href=\"https://doi.org/10.1016/j.physe.2010.01.013\">10.1016/j.physe.2010.01.013</a>.","bibtex":"@article{Panfilova_Michaelis de Vasconcellos_Pawlis_Lischka_Zrenner_2010, title={Resonant photocurrent-spectroscopy of individual CdSe quantum dots}, volume={42}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2010.01.013\">10.1016/j.physe.2010.01.013</a>}, number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures}, publisher={Elsevier BV}, author={Panfilova, M. and Michaelis de Vasconcellos, S. and Pawlis, A. and Lischka, K. and Zrenner, Artur}, year={2010}, pages={2521–2523} }","ama":"Panfilova M, Michaelis de Vasconcellos S, Pawlis A, Lischka K, Zrenner A. Resonant photocurrent-spectroscopy of individual CdSe quantum dots. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2010;42(10):2521-2523. doi:<a href=\"https://doi.org/10.1016/j.physe.2010.01.013\">10.1016/j.physe.2010.01.013</a>","ieee":"M. Panfilova, S. Michaelis de Vasconcellos, A. Pawlis, K. Lischka, and A. Zrenner, “Resonant photocurrent-spectroscopy of individual CdSe quantum dots,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, vol. 42, no. 10, pp. 2521–2523, 2010.","apa":"Panfilova, M., Michaelis de Vasconcellos, S., Pawlis, A., Lischka, K., &#38; Zrenner, A. (2010). Resonant photocurrent-spectroscopy of individual CdSe quantum dots. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, <i>42</i>(10), 2521–2523. <a href=\"https://doi.org/10.1016/j.physe.2010.01.013\">https://doi.org/10.1016/j.physe.2010.01.013</a>","short":"M. Panfilova, S. Michaelis de Vasconcellos, A. Pawlis, K. Lischka, A. Zrenner, Physica E: Low-Dimensional Systems and Nanostructures 42 (2010) 2521–2523.","chicago":"Panfilova, M., S. Michaelis de Vasconcellos, A. Pawlis, K. Lischka, and Artur Zrenner. “Resonant Photocurrent-Spectroscopy of Individual CdSe Quantum Dots.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i> 42, no. 10 (2010): 2521–23. <a href=\"https://doi.org/10.1016/j.physe.2010.01.013\">https://doi.org/10.1016/j.physe.2010.01.013</a>."},"volume":42,"user_id":"49428","publisher":"Elsevier BV","_id":"4552","page":"2521-2523","status":"public"},{"date_created":"2019-01-30T07:22:54Z","type":"conference","department":[{"_id":"15"},{"_id":"230"}],"publication":"Plasmonics: Metallic Nanostructures and Their Optical Properties VIII","citation":{"mla":"Ishikawa, Atsushi, et al. “Extremely Low-Loss Slow-Light Modes in Plasmonic Dielectric Hybrid Systems.” <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>, edited by Mark I. Stockman, SPIE, 2010, doi:<a href=\"https://doi.org/10.1117/12.860190\">10.1117/12.860190</a>.","apa":"Ishikawa, A., Oulton, R. F., Zentgraf, T., &#38; Zhang, X. (2010). Extremely low-loss slow-light modes in plasmonic dielectric hybrid systems. In M. I. Stockman (Ed.), <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>. SPIE. <a href=\"https://doi.org/10.1117/12.860190\">https://doi.org/10.1117/12.860190</a>","ieee":"A. Ishikawa, R. F. Oulton, T. Zentgraf, and X. Zhang, “Extremely low-loss slow-light modes in plasmonic dielectric hybrid systems,” in <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>, 2010.","chicago":"Ishikawa, Atsushi, Rupert F. Oulton, Thomas Zentgraf, and Xiang Zhang. “Extremely Low-Loss Slow-Light Modes in Plasmonic Dielectric Hybrid Systems.” In <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>, edited by Mark I. Stockman. SPIE, 2010. <a href=\"https://doi.org/10.1117/12.860190\">https://doi.org/10.1117/12.860190</a>.","short":"A. Ishikawa, R.F. Oulton, T. Zentgraf, X. Zhang, in: M.I. Stockman (Ed.), Plasmonics: Metallic Nanostructures and Their Optical Properties VIII, SPIE, 2010.","ama":"Ishikawa A, Oulton RF, Zentgraf T, Zhang X. Extremely low-loss slow-light modes in plasmonic dielectric hybrid systems. In: Stockman MI, ed. <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>. SPIE; 2010. doi:<a href=\"https://doi.org/10.1117/12.860190\">10.1117/12.860190</a>","bibtex":"@inproceedings{Ishikawa_Oulton_Zentgraf_Zhang_2010, title={Extremely low-loss slow-light modes in plasmonic dielectric hybrid systems}, DOI={<a href=\"https://doi.org/10.1117/12.860190\">10.1117/12.860190</a>}, booktitle={Plasmonics: Metallic Nanostructures and Their Optical Properties VIII}, publisher={SPIE}, author={Ishikawa, Atsushi and Oulton, Rupert F. and Zentgraf, Thomas and Zhang, Xiang}, editor={Stockman, Mark I.Editor}, year={2010} }"},"language":[{"iso":"eng"}],"_id":"7251","publisher":"SPIE","user_id":"30525","doi":"10.1117/12.860190","editor":[{"full_name":"Stockman, Mark I.","last_name":"Stockman","first_name":"Mark I."}],"status":"public","year":"2010","title":"Extremely low-loss slow-light modes in plasmonic dielectric hybrid systems","author":[{"first_name":"Atsushi","last_name":"Ishikawa","full_name":"Ishikawa, Atsushi"},{"first_name":"Rupert F.","last_name":"Oulton","full_name":"Oulton, Rupert F."},{"full_name":"Zentgraf, Thomas","last_name":"Zentgraf","first_name":"Thomas","orcid":"0000-0002-8662-1101","id":"30525"},{"first_name":"Xiang","last_name":"Zhang","full_name":"Zhang, Xiang"}],"publication_status":"published","date_updated":"2022-01-06T07:03:30Z"},{"publication":"Plasmonics: Metallic Nanostructures and Their Optical Properties VIII","citation":{"ama":"Sorger VJ, Oulton RF, Zentgraf T, et al. Semiconductor plasmon laser. In: Stockman MI, ed. <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>. SPIE; 2010. doi:<a href=\"https://doi.org/10.1117/12.859136\">10.1117/12.859136</a>","bibtex":"@inproceedings{Sorger_Oulton_Zentgraf_Ma_Gladden_Dai_Bartal_Zhang_2010, title={Semiconductor plasmon laser}, DOI={<a href=\"https://doi.org/10.1117/12.859136\">10.1117/12.859136</a>}, booktitle={Plasmonics: Metallic Nanostructures and Their Optical Properties VIII}, publisher={SPIE}, author={Sorger, Volker J. and Oulton, Rupert F. and Zentgraf, Thomas and Ma, Renmin and Gladden, Christopher and Dai, Lun and Bartal, Guy and Zhang, Xiang}, editor={Stockman, Mark I.Editor}, year={2010} }","mla":"Sorger, Volker J., et al. “Semiconductor Plasmon Laser.” <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>, edited by Mark I. Stockman, SPIE, 2010, doi:<a href=\"https://doi.org/10.1117/12.859136\">10.1117/12.859136</a>.","chicago":"Sorger, Volker J., Rupert F. Oulton, Thomas Zentgraf, Renmin Ma, Christopher Gladden, Lun Dai, Guy Bartal, and Xiang Zhang. “Semiconductor Plasmon Laser.” In <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>, edited by Mark I. Stockman. SPIE, 2010. <a href=\"https://doi.org/10.1117/12.859136\">https://doi.org/10.1117/12.859136</a>.","short":"V.J. Sorger, R.F. Oulton, T. Zentgraf, R. Ma, C. Gladden, L. Dai, G. Bartal, X. Zhang, in: M.I. Stockman (Ed.), Plasmonics: Metallic Nanostructures and Their Optical Properties VIII, SPIE, 2010.","apa":"Sorger, V. J., Oulton, R. F., Zentgraf, T., Ma, R., Gladden, C., Dai, L., … Zhang, X. (2010). Semiconductor plasmon laser. In M. I. Stockman (Ed.), <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>. SPIE. <a href=\"https://doi.org/10.1117/12.859136\">https://doi.org/10.1117/12.859136</a>","ieee":"V. J. Sorger <i>et al.</i>, “Semiconductor plasmon laser,” in <i>Plasmonics: Metallic Nanostructures and Their Optical Properties VIII</i>, 2010."},"type":"conference","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-01-30T07:24:06Z","publication_status":"published","date_updated":"2022-01-06T07:03:30Z","title":"Semiconductor plasmon laser","year":"2010","status":"public","author":[{"last_name":"Sorger","first_name":"Volker J.","full_name":"Sorger, Volker J."},{"last_name":"Oulton","first_name":"Rupert F.","full_name":"Oulton, Rupert F."},{"full_name":"Zentgraf, Thomas","first_name":"Thomas","orcid":"0000-0002-8662-1101","last_name":"Zentgraf","id":"30525"},{"first_name":"Renmin","last_name":"Ma","full_name":"Ma, Renmin"},{"full_name":"Gladden, Christopher","last_name":"Gladden","first_name":"Christopher"},{"first_name":"Lun","last_name":"Dai","full_name":"Dai, Lun"},{"last_name":"Bartal","first_name":"Guy","full_name":"Bartal, Guy"},{"full_name":"Zhang, Xiang","first_name":"Xiang","last_name":"Zhang"}],"user_id":"30525","doi":"10.1117/12.859136","editor":[{"last_name":"Stockman","first_name":"Mark I.","full_name":"Stockman, Mark I."}],"language":[{"iso":"eng"}],"_id":"7252","publisher":"SPIE"},{"department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"287"}],"type":"journal_article","date_created":"2019-02-04T14:35:22Z","issue":"2","publication":"Journal of The Electrochemical Society","doi":"10.1149/1.3519999","language":[{"iso":"eng"}],"article_number":"H119","intvolume":"       158","publication_status":"published","date_updated":"2022-01-06T07:03:39Z","author":[{"last_name":"Mehta","first_name":"M.","full_name":"Mehta, M."},{"full_name":"Meier, Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","first_name":"Cedrik","last_name":"Meier","id":"20798"}],"publication_identifier":{"issn":["0013-4651"]},"title":"Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals","year":"2010","citation":{"ama":"Mehta M, Meier C. Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals. <i>Journal of The Electrochemical Society</i>. 2010;158(2). doi:<a href=\"https://doi.org/10.1149/1.3519999\">10.1149/1.3519999</a>","bibtex":"@article{Mehta_Meier_2010, title={Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals}, volume={158}, DOI={<a href=\"https://doi.org/10.1149/1.3519999\">10.1149/1.3519999</a>}, number={2H119}, journal={Journal of The Electrochemical Society}, publisher={The Electrochemical Society}, author={Mehta, M. and Meier, Cedrik}, year={2010} }","mla":"Mehta, M., and Cedrik Meier. “Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals.” <i>Journal of The Electrochemical Society</i>, vol. 158, no. 2, H119, The Electrochemical Society, 2010, doi:<a href=\"https://doi.org/10.1149/1.3519999\">10.1149/1.3519999</a>.","short":"M. Mehta, C. Meier, Journal of The Electrochemical Society 158 (2010).","chicago":"Mehta, M., and Cedrik Meier. “Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals.” <i>Journal of The Electrochemical Society</i> 158, no. 2 (2010). <a href=\"https://doi.org/10.1149/1.3519999\">https://doi.org/10.1149/1.3519999</a>.","apa":"Mehta, M., &#38; Meier, C. (2010). Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals. <i>Journal of The Electrochemical Society</i>, <i>158</i>(2). <a href=\"https://doi.org/10.1149/1.3519999\">https://doi.org/10.1149/1.3519999</a>","ieee":"M. Mehta and C. Meier, “Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals,” <i>Journal of The Electrochemical Society</i>, vol. 158, no. 2, 2010."},"volume":158,"user_id":"20798","publisher":"The Electrochemical Society","_id":"7494","status":"public"},{"type":"journal_article","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"287"}],"date_created":"2019-02-04T14:39:19Z","issue":"45","publication":"Nanotechnology","doi":"10.1088/0957-4484/21/45/455201","article_number":"455201","language":[{"iso":"eng"}],"publication_status":"published","date_updated":"2022-01-06T07:03:39Z","intvolume":"        21","title":"Electroluminescence from silicon nanoparticles fabricated from the gas phase","year":"2010","publication_identifier":{"issn":["0957-4484","1361-6528"]},"author":[{"full_name":"Theis, Jens","first_name":"Jens","last_name":"Theis"},{"full_name":"Geller, Martin","last_name":"Geller","first_name":"Martin"},{"first_name":"Axel","last_name":"Lorke","full_name":"Lorke, Axel"},{"full_name":"Wiggers, Hartmut","last_name":"Wiggers","first_name":"Hartmut"},{"full_name":"Wieck, Andreas","first_name":"Andreas","last_name":"Wieck"},{"orcid":"https://orcid.org/0000-0002-3787-3572","first_name":"Cedrik","last_name":"Meier","full_name":"Meier, Cedrik","id":"20798"}],"citation":{"bibtex":"@article{Theis_Geller_Lorke_Wiggers_Wieck_Meier_2010, title={Electroluminescence from silicon nanoparticles fabricated from the gas phase}, volume={21}, DOI={<a href=\"https://doi.org/10.1088/0957-4484/21/45/455201\">10.1088/0957-4484/21/45/455201</a>}, number={45455201}, journal={Nanotechnology}, publisher={IOP Publishing}, author={Theis, Jens and Geller, Martin and Lorke, Axel and Wiggers, Hartmut and Wieck, Andreas and Meier, Cedrik}, year={2010} }","chicago":"Theis, Jens, Martin Geller, Axel Lorke, Hartmut Wiggers, Andreas Wieck, and Cedrik Meier. “Electroluminescence from Silicon Nanoparticles Fabricated from the Gas Phase.” <i>Nanotechnology</i> 21, no. 45 (2010). <a href=\"https://doi.org/10.1088/0957-4484/21/45/455201\">https://doi.org/10.1088/0957-4484/21/45/455201</a>.","short":"J. Theis, M. Geller, A. Lorke, H. Wiggers, A. Wieck, C. Meier, Nanotechnology 21 (2010).","ama":"Theis J, Geller M, Lorke A, Wiggers H, Wieck A, Meier C. Electroluminescence from silicon nanoparticles fabricated from the gas phase. <i>Nanotechnology</i>. 2010;21(45). doi:<a href=\"https://doi.org/10.1088/0957-4484/21/45/455201\">10.1088/0957-4484/21/45/455201</a>","ieee":"J. Theis, M. Geller, A. Lorke, H. Wiggers, A. Wieck, and C. Meier, “Electroluminescence from silicon nanoparticles fabricated from the gas phase,” <i>Nanotechnology</i>, vol. 21, no. 45, 2010.","apa":"Theis, J., Geller, M., Lorke, A., Wiggers, H., Wieck, A., &#38; Meier, C. (2010). Electroluminescence from silicon nanoparticles fabricated from the gas phase. <i>Nanotechnology</i>, <i>21</i>(45). <a href=\"https://doi.org/10.1088/0957-4484/21/45/455201\">https://doi.org/10.1088/0957-4484/21/45/455201</a>","mla":"Theis, Jens, et al. “Electroluminescence from Silicon Nanoparticles Fabricated from the Gas Phase.” <i>Nanotechnology</i>, vol. 21, no. 45, 455201, IOP Publishing, 2010, doi:<a href=\"https://doi.org/10.1088/0957-4484/21/45/455201\">10.1088/0957-4484/21/45/455201</a>."},"user_id":"20798","volume":21,"_id":"7496","publisher":"IOP Publishing","status":"public"},{"author":[{"last_name":"Gogel","first_name":"D.","full_name":"Gogel, D."},{"last_name":"Weinl","first_name":"M.","full_name":"Weinl, M."},{"full_name":"Lindner, Jörg","last_name":"Lindner","first_name":"Jörg","id":"20797"},{"full_name":"Stritzker, B.","first_name":"B.","last_name":"Stritzker"}],"year":"2010","title":"Plasma modification of nanosphere lithography masks made of polystyrene beads","status":"public","article_type":"original","intvolume":"        12","date_updated":"2022-01-06T07:00:26Z","language":[{"iso":"eng"}],"_id":"4153","page":"740-744","volume":12,"user_id":"55706","citation":{"bibtex":"@article{Gogel_Weinl_Lindner_Stritzker_2010, title={Plasma modification of nanosphere lithography masks made of polystyrene beads}, volume={12}, number={3}, journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS}, author={Gogel, D. and Weinl, M. and Lindner, Jörg and Stritzker, B.}, year={2010}, pages={740–744} }","ama":"Gogel D, Weinl M, Lindner J, Stritzker B. Plasma modification of nanosphere lithography masks made of polystyrene beads. <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i>. 2010;12(3):740-744.","mla":"Gogel, D., et al. “Plasma Modification of Nanosphere Lithography Masks Made of Polystyrene Beads.” <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i>, vol. 12, no. 3, 2010, pp. 740–44.","chicago":"Gogel, D., M. Weinl, Jörg Lindner, and B. Stritzker. “Plasma Modification of Nanosphere Lithography Masks Made of Polystyrene Beads.” <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i> 12, no. 3 (2010): 740–44.","short":"D. Gogel, M. Weinl, J. Lindner, B. Stritzker, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 12 (2010) 740–744.","ieee":"D. Gogel, M. Weinl, J. Lindner, and B. Stritzker, “Plasma modification of nanosphere lithography masks made of polystyrene beads,” <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i>, vol. 12, no. 3, pp. 740–744, 2010.","apa":"Gogel, D., Weinl, M., Lindner, J., &#38; Stritzker, B. (2010). Plasma modification of nanosphere lithography masks made of polystyrene beads. <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i>, <i>12</i>(3), 740–744."},"publication":"JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS","issue":"3","abstract":[{"lang":"eng","text":"Nanosphere lithography (NSL) masks consisting of mono- or double-layers of polystyrene (PS) nano-beads are fabricated on silicon exploiting the self-organization of PS particles during the controlled drying of a colloidal suspension on a surface. The shape changes and shrinkage of PS sphere masks upon treatment in an air plasma are studied as a function of initial sphere size, plasma power and treatment time. The influence of several experimental parameters, including the plasma induced temperature rise, are analysed using scanning and transmission electron microscopy. It is demonstrated that a variety of new intriguing nanopatterns can be generated on silicon surfaces by the combination of NSL and plasma techniques, largely broadening the variety of patterns available so far by NSL."}],"date_created":"2018-08-27T13:29:28Z","department":[{"_id":"286"},{"_id":"230"}],"type":"journal_article"},{"status":"public","user_id":"49428","volume":82,"page":"251-258","_id":"6619","publisher":"Wiley","citation":{"mla":"Warnecke, H. J., et al. “Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*.” <i>Chemie Ingenieur Technik</i>, vol. 82, no. 3, Wiley, 2010, pp. 251–58, doi:<a href=\"https://doi.org/10.1002/cite.200900169\">10.1002/cite.200900169</a>.","ama":"Warnecke H-J, Bothe D, Zrenner A, Berth G, Hüsch K-P. Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*. <i>Chemie Ingenieur Technik</i>. 2010;82(3):251-258. doi:<a href=\"https://doi.org/10.1002/cite.200900169\">10.1002/cite.200900169</a>","bibtex":"@article{Warnecke_Bothe_Zrenner_Berth_Hüsch_2010, title={Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*}, volume={82}, DOI={<a href=\"https://doi.org/10.1002/cite.200900169\">10.1002/cite.200900169</a>}, number={3}, journal={Chemie Ingenieur Technik}, publisher={Wiley}, author={Warnecke, H.-J. and Bothe, D. and Zrenner, Artur and Berth, Gerhard and Hüsch, K.-P.}, year={2010}, pages={251–258} }","apa":"Warnecke, H.-J., Bothe, D., Zrenner, A., Berth, G., &#38; Hüsch, K.-P. (2010). Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*. <i>Chemie Ingenieur Technik</i>, <i>82</i>(3), 251–258. <a href=\"https://doi.org/10.1002/cite.200900169\">https://doi.org/10.1002/cite.200900169</a>","ieee":"H.-J. Warnecke, D. Bothe, A. Zrenner, G. Berth, and K.-P. Hüsch, “Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*,” <i>Chemie Ingenieur Technik</i>, vol. 82, no. 3, pp. 251–258, 2010.","short":"H.-J. Warnecke, D. Bothe, A. Zrenner, G. Berth, K.-P. Hüsch, Chemie Ingenieur Technik 82 (2010) 251–258.","chicago":"Warnecke, H.-J., D. Bothe, Artur Zrenner, Gerhard Berth, and K.-P. Hüsch. “Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*.” <i>Chemie Ingenieur Technik</i> 82, no. 3 (2010): 251–58. <a href=\"https://doi.org/10.1002/cite.200900169\">https://doi.org/10.1002/cite.200900169</a>."},"publication_status":"published","date_updated":"2022-01-06T07:03:13Z","article_type":"original","intvolume":"        82","year":"2010","title":"Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*","author":[{"full_name":"Warnecke, H.-J.","last_name":"Warnecke","first_name":"H.-J."},{"full_name":"Bothe, D.","last_name":"Bothe","first_name":"D."},{"last_name":"Zrenner","orcid":"0000-0002-5190-0944","first_name":"Artur","full_name":"Zrenner, Artur","id":"606"},{"full_name":"Berth, Gerhard","last_name":"Berth","first_name":"Gerhard","id":"53"},{"full_name":"Hüsch, K.-P.","first_name":"K.-P.","last_name":"Hüsch"}],"publication_identifier":{"issn":["0009-286X","1522-2640"]},"doi":"10.1002/cite.200900169","language":[{"iso":"ger"}],"abstract":[{"lang":"ger","text":"Strömungsbasierte Mischprozesse sind grundlegender Bestandteil vieler chemischer Prozesse. Realisierbare Mischzeiten reichen von einigen Millisekunden bis zu Sekunden, wobei die vollständige Homogenisierung oft nicht sichergestellt ist. Werden kinetische Parameter chemischer Reaktionen dieses Zeitskalenbereichs ohne Berücksichtigung der Mischprozesse bestimmt, sind sie mischungsmaskiert und geben die inhärente chemische Kinetik nicht wieder. In dieser Arbeit wird die Validierung und Anwendung einer Methode zur Bestimmung inhärenter chemischer Kinetiken von in Flüssigphase ablaufenden chemischen Reaktionen im stationären, laminaren Flachbettmikroreaktor vorgestellt. Der verfolgte Ansatz basiert auf der mechanistischen Modellierung der Molmengen unter Berücksichtigung von Konvektion, Diffusion und Reaktion und der Bestimmung der unbekannten Parameter durch Anpassung des Modells an experimentell ermittelte Konzentrationsverläufe."}],"issue":"3","publication":"Chemie Ingenieur Technik","type":"journal_article","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"date_created":"2019-01-10T10:13:09Z"},{"language":[{"iso":"eng"}],"doi":"10.1016/j.physe.2009.12.051","author":[{"first_name":"Karoline A.","last_name":"Piegdon","full_name":"Piegdon, Karoline A."},{"full_name":"Offer, Matthias","first_name":"Matthias","last_name":"Offer"},{"full_name":"Lorke, Axel","first_name":"Axel","last_name":"Lorke"},{"last_name":"Urbanski","first_name":"Martin","full_name":"Urbanski, Martin"},{"full_name":"Hoischen, Andreas","first_name":"Andreas","last_name":"Hoischen"},{"full_name":"Kitzerow, Heinz-Siegfried","last_name":"Kitzerow","first_name":"Heinz-Siegfried","id":"254"},{"first_name":"Stefan","last_name":"Declair","full_name":"Declair, Stefan"},{"full_name":"Förstner, Jens","last_name":"Förstner","first_name":"Jens"},{"full_name":"Meier, Torsten","last_name":"Meier","first_name":"Torsten"},{"full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk","id":"37763"},{"full_name":"Wieck, Andreas D.","first_name":"Andreas D.","last_name":"Wieck"},{"full_name":"Meier, Cedrik","last_name":"Meier","first_name":"Cedrik"}],"publication_identifier":{"issn":["1386-9477"]},"year":"2010","title":"Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator","intvolume":"        42","publication_status":"published","date_updated":"2023-01-10T13:59:58Z","date_created":"2019-02-21T14:43:30Z","department":[{"_id":"15"},{"_id":"230"},{"_id":"313"}],"type":"journal_article","issue":"10","publication":"Physica E: Low-dimensional Systems and Nanostructures","_id":"7993","publisher":"Elsevier BV","page":"2552-2555","volume":42,"user_id":"254","status":"public","citation":{"ama":"Piegdon KA, Offer M, Lorke A, et al. Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2010;42(10):2552-2555. doi:<a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">10.1016/j.physe.2009.12.051</a>","bibtex":"@article{Piegdon_Offer_Lorke_Urbanski_Hoischen_Kitzerow_Declair_Förstner_Meier_Reuter_et al._2010, title={Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator}, volume={42}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">10.1016/j.physe.2009.12.051</a>}, number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures}, publisher={Elsevier BV}, author={Piegdon, Karoline A. and Offer, Matthias and Lorke, Axel and Urbanski, Martin and Hoischen, Andreas and Kitzerow, Heinz-Siegfried and Declair, Stefan and Förstner, Jens and Meier, Torsten and Reuter, Dirk and et al.}, year={2010}, pages={2552–2555} }","mla":"Piegdon, Karoline A., et al. “Self-Assembled Quantum Dots in a Liquid-Crystal-Tunable Microdisk Resonator.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, vol. 42, no. 10, Elsevier BV, 2010, pp. 2552–55, doi:<a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">10.1016/j.physe.2009.12.051</a>.","short":"K.A. Piegdon, M. Offer, A. Lorke, M. Urbanski, A. Hoischen, H.-S. Kitzerow, S. Declair, J. Förstner, T. Meier, D. Reuter, A.D. Wieck, C. Meier, Physica E: Low-Dimensional Systems and Nanostructures 42 (2010) 2552–2555.","chicago":"Piegdon, Karoline A., Matthias Offer, Axel Lorke, Martin Urbanski, Andreas Hoischen, Heinz-Siegfried Kitzerow, Stefan Declair, et al. “Self-Assembled Quantum Dots in a Liquid-Crystal-Tunable Microdisk Resonator.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i> 42, no. 10 (2010): 2552–55. <a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">https://doi.org/10.1016/j.physe.2009.12.051</a>.","apa":"Piegdon, K. A., Offer, M., Lorke, A., Urbanski, M., Hoischen, A., Kitzerow, H.-S., Declair, S., Förstner, J., Meier, T., Reuter, D., Wieck, A. D., &#38; Meier, C. (2010). Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, <i>42</i>(10), 2552–2555. <a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">https://doi.org/10.1016/j.physe.2009.12.051</a>","ieee":"K. A. Piegdon <i>et al.</i>, “Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, vol. 42, no. 10, pp. 2552–2555, 2010, doi: <a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">10.1016/j.physe.2009.12.051</a>."}},{"date_updated":"2023-01-24T18:46:39Z","publication_status":"published","intvolume":"        37","year":"2010","title":"Director field of birefringent stripes in liquid crystal/nanoparticle dispersions","publication_identifier":{"issn":["0267-8292","1366-5855"]},"author":[{"first_name":"Martin","last_name":"Urbanski","full_name":"Urbanski, Martin"},{"full_name":"Kinkead, Brandy","last_name":"Kinkead","first_name":"Brandy"},{"first_name":"Torsten","last_name":"Hegmann","full_name":"Hegmann, Torsten"},{"first_name":"Heinz-Siegfried","last_name":"Kitzerow","full_name":"Kitzerow, Heinz-Siegfried","id":"254"}],"doi":"10.1080/02678292.2010.489160","language":[{"iso":"eng"}],"publication":"Liquid Crystals","issue":"9","keyword":["Condensed Matter Physics","General Materials Science","General Chemistry"],"type":"journal_article","department":[{"_id":"313"},{"_id":"230"},{"_id":"638"}],"date_created":"2023-01-24T18:46:15Z","status":"public","user_id":"254","volume":37,"page":"1151-1156","_id":"39740","publisher":"Informa UK Limited","citation":{"apa":"Urbanski, M., Kinkead, B., Hegmann, T., &#38; Kitzerow, H.-S. (2010). Director field of birefringent stripes in liquid crystal/nanoparticle dispersions. <i>Liquid Crystals</i>, <i>37</i>(9), 1151–1156. <a href=\"https://doi.org/10.1080/02678292.2010.489160\">https://doi.org/10.1080/02678292.2010.489160</a>","ieee":"M. Urbanski, B. Kinkead, T. Hegmann, and H.-S. Kitzerow, “Director field of birefringent stripes in liquid crystal/nanoparticle dispersions,” <i>Liquid Crystals</i>, vol. 37, no. 9, pp. 1151–1156, 2010, doi: <a href=\"https://doi.org/10.1080/02678292.2010.489160\">10.1080/02678292.2010.489160</a>.","short":"M. Urbanski, B. Kinkead, T. Hegmann, H.-S. 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Director field of birefringent stripes in liquid crystal/nanoparticle dispersions. <i>Liquid Crystals</i>. 2010;37(9):1151-1156. doi:<a href=\"https://doi.org/10.1080/02678292.2010.489160\">10.1080/02678292.2010.489160</a>","bibtex":"@article{Urbanski_Kinkead_Hegmann_Kitzerow_2010, title={Director field of birefringent stripes in liquid crystal/nanoparticle dispersions}, volume={37}, DOI={<a href=\"https://doi.org/10.1080/02678292.2010.489160\">10.1080/02678292.2010.489160</a>}, number={9}, journal={Liquid Crystals}, publisher={Informa UK Limited}, author={Urbanski, Martin and Kinkead, Brandy and Hegmann, Torsten and Kitzerow, Heinz-Siegfried}, year={2010}, pages={1151–1156} }"}},{"department":[{"_id":"313"},{"_id":"230"},{"_id":"638"}],"type":"journal_article","keyword":["Condensed Matter Physics","Electronic","Optical and Magnetic Materials"],"date_created":"2023-01-24T18:47:05Z","publication":"Ferroelectrics","issue":"1","doi":"10.1080/00150191003683807","language":[{"iso":"eng"}],"intvolume":"       395","date_updated":"2023-01-24T18:47:37Z","publication_status":"published","publication_identifier":{"issn":["0015-0193","1563-5112"]},"author":[{"full_name":"Kitzerow, Heinz-Siegfried","last_name":"Kitzerow","first_name":"Heinz-Siegfried","id":"254"}],"year":"2010","title":"Blue Phases: Prior Art, Potential Polar Effects, Challenges","citation":{"bibtex":"@article{Kitzerow_2010, title={Blue Phases: Prior Art, Potential Polar Effects, Challenges}, volume={395}, DOI={<a href=\"https://doi.org/10.1080/00150191003683807\">10.1080/00150191003683807</a>}, number={1}, journal={Ferroelectrics}, publisher={Informa UK Limited}, author={Kitzerow, Heinz-Siegfried}, year={2010}, pages={66–85} }","ama":"Kitzerow H-S. Blue Phases: Prior Art, Potential Polar Effects, Challenges. <i>Ferroelectrics</i>. 2010;395(1):66-85. doi:<a href=\"https://doi.org/10.1080/00150191003683807\">10.1080/00150191003683807</a>","mla":"Kitzerow, Heinz-Siegfried. “Blue Phases: Prior Art, Potential Polar Effects, Challenges.” <i>Ferroelectrics</i>, vol. 395, no. 1, Informa UK Limited, 2010, pp. 66–85, doi:<a href=\"https://doi.org/10.1080/00150191003683807\">10.1080/00150191003683807</a>.","short":"H.-S. Kitzerow, Ferroelectrics 395 (2010) 66–85.","chicago":"Kitzerow, Heinz-Siegfried. “Blue Phases: Prior Art, Potential Polar Effects, Challenges.” <i>Ferroelectrics</i> 395, no. 1 (2010): 66–85. <a href=\"https://doi.org/10.1080/00150191003683807\">https://doi.org/10.1080/00150191003683807</a>.","ieee":"H.-S. Kitzerow, “Blue Phases: Prior Art, Potential Polar Effects, Challenges,” <i>Ferroelectrics</i>, vol. 395, no. 1, pp. 66–85, 2010, doi: <a href=\"https://doi.org/10.1080/00150191003683807\">10.1080/00150191003683807</a>.","apa":"Kitzerow, H.-S. (2010). Blue Phases: Prior Art, Potential Polar Effects, Challenges. <i>Ferroelectrics</i>, <i>395</i>(1), 66–85. <a href=\"https://doi.org/10.1080/00150191003683807\">https://doi.org/10.1080/00150191003683807</a>"},"volume":395,"user_id":"254","publisher":"Informa UK Limited","_id":"39741","page":"66-85","status":"public"}]