[{"publication":"Nachrichten aus der Chemie","issue":"6","type":"journal_article","keyword":["General Chemical Engineering","General Chemistry"],"department":[{"_id":"313"},{"_id":"230"},{"_id":"638"}],"date_created":"2023-01-25T11:31:11Z","date_updated":"2023-01-25T11:38:23Z","publication_status":"published","intvolume":"        53","title":"33. Arbeitstagung Flüssigkristalle","year":"2010","author":[{"id":"254","first_name":"Heinz-Siegfried","last_name":"Kitzerow","full_name":"Kitzerow, Heinz-Siegfried"}],"publication_identifier":{"issn":["1439-9598"]},"doi":"10.1002/nadc.20050530635","language":[{"iso":"eng"}],"citation":{"apa":"Kitzerow, H.-S. (2010). 33. Arbeitstagung Flüssigkristalle. <i>Nachrichten Aus Der Chemie</i>, <i>53</i>(6), 678–679. <a href=\"https://doi.org/10.1002/nadc.20050530635\">https://doi.org/10.1002/nadc.20050530635</a>","ieee":"H.-S. Kitzerow, “33. Arbeitstagung Flüssigkristalle,” <i>Nachrichten aus der Chemie</i>, vol. 53, no. 6, pp. 678–679, 2010, doi: <a href=\"https://doi.org/10.1002/nadc.20050530635\">10.1002/nadc.20050530635</a>.","chicago":"Kitzerow, Heinz-Siegfried. “33. Arbeitstagung Flüssigkristalle.” <i>Nachrichten Aus Der Chemie</i> 53, no. 6 (2010): 678–79. <a href=\"https://doi.org/10.1002/nadc.20050530635\">https://doi.org/10.1002/nadc.20050530635</a>.","short":"H.-S. Kitzerow, Nachrichten Aus Der Chemie 53 (2010) 678–679.","mla":"Kitzerow, Heinz-Siegfried. “33. Arbeitstagung Flüssigkristalle.” <i>Nachrichten Aus Der Chemie</i>, vol. 53, no. 6, Wiley, 2010, pp. 678–79, doi:<a href=\"https://doi.org/10.1002/nadc.20050530635\">10.1002/nadc.20050530635</a>.","ama":"Kitzerow H-S. 33. Arbeitstagung Flüssigkristalle. <i>Nachrichten aus der Chemie</i>. 2010;53(6):678-679. doi:<a href=\"https://doi.org/10.1002/nadc.20050530635\">10.1002/nadc.20050530635</a>","bibtex":"@article{Kitzerow_2010, title={33. Arbeitstagung Flüssigkristalle}, volume={53}, DOI={<a href=\"https://doi.org/10.1002/nadc.20050530635\">10.1002/nadc.20050530635</a>}, number={6}, journal={Nachrichten aus der Chemie}, publisher={Wiley}, author={Kitzerow, Heinz-Siegfried}, year={2010}, pages={678–679} }"},"status":"public","user_id":"254","volume":53,"page":"678-679","publisher":"Wiley","_id":"39972"},{"publication_identifier":{"issn":["0021-4922","1347-4065"]},"author":[{"full_name":"Nordendorf, Gaby","first_name":"Gaby","last_name":"Nordendorf"},{"last_name":"Kasdorf","first_name":"Olga","full_name":"Kasdorf, Olga"},{"id":"254","full_name":"Kitzerow, Heinz-Siegfried","first_name":"Heinz-Siegfried","last_name":"Kitzerow"},{"first_name":"Yanyu","last_name":"Liang","full_name":"Liang, Yanyu"},{"first_name":"Xinliang","last_name":"Feng","full_name":"Feng, Xinliang"},{"full_name":"Müllen, Klaus","last_name":"Müllen","first_name":"Klaus"}],"year":"2010","title":"Liquid Crystal Addressing by Graphene Electrodes Made from Graphene Oxide","intvolume":"        49","date_updated":"2023-01-24T18:45:56Z","publication_status":"published","language":[{"iso":"eng"}],"article_number":"100206","doi":"10.1143/jjap.49.100206","publication":"Japanese Journal of Applied Physics","issue":"10R","abstract":[{"text":"<jats:p> \r\n   The electrooptic characteristics of the field-induced reorientation of a nematic liquid crystal are studied using graphene layers as transparent conductive electrodes. The covering of a large area with highly conductive graphene was achieved by the thermal reduction of a graphene oxide film. The conductivity of the graphene electrode provides electrooptic properties that are comparable to those of liquid crystal cells with two conventional indium tin oxide electrodes. This result confirms earlier studies and suggestions concerning graphene-based liquid crystal devices. It demonstrates that the fabrication of graphene layers via the deposition and subsequent reduction of graphene oxide is suitable for liquid crystal applications. \r\n   </jats:p>","lang":"eng"}],"date_created":"2023-01-24T18:45:26Z","department":[{"_id":"313"},{"_id":"230"},{"_id":"638"}],"type":"journal_article","keyword":["General Physics and Astronomy","General Engineering"],"status":"public","_id":"39739","publisher":"IOP Publishing","volume":49,"user_id":"254","citation":{"bibtex":"@article{Nordendorf_Kasdorf_Kitzerow_Liang_Feng_Müllen_2010, title={Liquid Crystal Addressing by Graphene Electrodes Made from Graphene Oxide}, volume={49}, DOI={<a href=\"https://doi.org/10.1143/jjap.49.100206\">10.1143/jjap.49.100206</a>}, number={10R100206}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Nordendorf, Gaby and Kasdorf, Olga and Kitzerow, Heinz-Siegfried and Liang, Yanyu and Feng, Xinliang and Müllen, Klaus}, year={2010} }","ama":"Nordendorf G, Kasdorf O, Kitzerow H-S, Liang Y, Feng X, Müllen K. Liquid Crystal Addressing by Graphene Electrodes Made from Graphene Oxide. <i>Japanese Journal of Applied Physics</i>. 2010;49(10R). doi:<a href=\"https://doi.org/10.1143/jjap.49.100206\">10.1143/jjap.49.100206</a>","mla":"Nordendorf, Gaby, et al. “Liquid Crystal Addressing by Graphene Electrodes Made from Graphene Oxide.” <i>Japanese Journal of Applied Physics</i>, vol. 49, no. 10R, 100206, IOP Publishing, 2010, doi:<a href=\"https://doi.org/10.1143/jjap.49.100206\">10.1143/jjap.49.100206</a>.","short":"G. Nordendorf, O. Kasdorf, H.-S. Kitzerow, Y. Liang, X. Feng, K. Müllen, Japanese Journal of Applied Physics 49 (2010).","chicago":"Nordendorf, Gaby, Olga Kasdorf, Heinz-Siegfried Kitzerow, Yanyu Liang, Xinliang Feng, and Klaus Müllen. “Liquid Crystal Addressing by Graphene Electrodes Made from Graphene Oxide.” <i>Japanese Journal of Applied Physics</i> 49, no. 10R (2010). <a href=\"https://doi.org/10.1143/jjap.49.100206\">https://doi.org/10.1143/jjap.49.100206</a>.","ieee":"G. Nordendorf, O. Kasdorf, H.-S. Kitzerow, Y. Liang, X. Feng, and K. Müllen, “Liquid Crystal Addressing by Graphene Electrodes Made from Graphene Oxide,” <i>Japanese Journal of Applied Physics</i>, vol. 49, no. 10R, Art. no. 100206, 2010, doi: <a href=\"https://doi.org/10.1143/jjap.49.100206\">10.1143/jjap.49.100206</a>.","apa":"Nordendorf, G., Kasdorf, O., Kitzerow, H.-S., Liang, Y., Feng, X., &#38; Müllen, K. (2010). Liquid Crystal Addressing by Graphene Electrodes Made from Graphene Oxide. <i>Japanese Journal of Applied Physics</i>, <i>49</i>(10R), Article 100206. <a href=\"https://doi.org/10.1143/jjap.49.100206\">https://doi.org/10.1143/jjap.49.100206</a>"}},{"keyword":["General Materials Science"],"type":"journal_article","department":[{"_id":"313"},{"_id":"230"},{"_id":"638"}],"date_created":"2023-01-24T18:44:37Z","publication":"Nanoscale","issue":"7","doi":"10.1039/c0nr00139b","article_number":"1118","language":[{"iso":"eng"}],"publication_status":"published","date_updated":"2023-01-24T18:45:04Z","intvolume":"         2","title":"Electroconvection in nematic liquid crystals via nanoparticle doping","year":"2010","author":[{"full_name":"Urbanski, Martin","first_name":"Martin","last_name":"Urbanski"},{"first_name":"Brandy","last_name":"Kinkead","full_name":"Kinkead, Brandy"},{"first_name":"Hao","last_name":"Qi","full_name":"Qi, Hao"},{"first_name":"Torsten","last_name":"Hegmann","full_name":"Hegmann, Torsten"},{"id":"254","last_name":"Kitzerow","first_name":"Heinz-Siegfried","full_name":"Kitzerow, Heinz-Siegfried"}],"publication_identifier":{"issn":["2040-3364","2040-3372"]},"citation":{"mla":"Urbanski, Martin, et al. “Electroconvection in Nematic Liquid Crystals via Nanoparticle Doping.” <i>Nanoscale</i>, vol. 2, no. 7, 1118, Royal Society of Chemistry (RSC), 2010, doi:<a href=\"https://doi.org/10.1039/c0nr00139b\">10.1039/c0nr00139b</a>.","ama":"Urbanski M, Kinkead B, Qi H, Hegmann T, Kitzerow H-S. Electroconvection in nematic liquid crystals via nanoparticle doping. <i>Nanoscale</i>. 2010;2(7). doi:<a href=\"https://doi.org/10.1039/c0nr00139b\">10.1039/c0nr00139b</a>","bibtex":"@article{Urbanski_Kinkead_Qi_Hegmann_Kitzerow_2010, title={Electroconvection in nematic liquid crystals via nanoparticle doping}, volume={2}, DOI={<a href=\"https://doi.org/10.1039/c0nr00139b\">10.1039/c0nr00139b</a>}, number={71118}, journal={Nanoscale}, publisher={Royal Society of Chemistry (RSC)}, author={Urbanski, Martin and Kinkead, Brandy and Qi, Hao and Hegmann, Torsten and Kitzerow, Heinz-Siegfried}, year={2010} }","apa":"Urbanski, M., Kinkead, B., Qi, H., Hegmann, T., &#38; Kitzerow, H.-S. (2010). Electroconvection in nematic liquid crystals via nanoparticle doping. <i>Nanoscale</i>, <i>2</i>(7), Article 1118. <a href=\"https://doi.org/10.1039/c0nr00139b\">https://doi.org/10.1039/c0nr00139b</a>","ieee":"M. Urbanski, B. Kinkead, H. Qi, T. Hegmann, and H.-S. Kitzerow, “Electroconvection in nematic liquid crystals via nanoparticle doping,” <i>Nanoscale</i>, vol. 2, no. 7, Art. no. 1118, 2010, doi: <a href=\"https://doi.org/10.1039/c0nr00139b\">10.1039/c0nr00139b</a>.","short":"M. Urbanski, B. Kinkead, H. Qi, T. Hegmann, H.-S. Kitzerow, Nanoscale 2 (2010).","chicago":"Urbanski, Martin, Brandy Kinkead, Hao Qi, Torsten Hegmann, and Heinz-Siegfried Kitzerow. “Electroconvection in Nematic Liquid Crystals via Nanoparticle Doping.” <i>Nanoscale</i> 2, no. 7 (2010). <a href=\"https://doi.org/10.1039/c0nr00139b\">https://doi.org/10.1039/c0nr00139b</a>."},"user_id":"254","volume":2,"_id":"39738","publisher":"Royal Society of Chemistry (RSC)","status":"public"},{"status":"public","_id":"39737","publisher":"The Optical Society","user_id":"254","volume":49,"citation":{"bibtex":"@article{Lorenz_Schuhmann_Kitzerow_2010, title={Switchable waveguiding in two liquid-crystal-filled photonic crystal fibers}, volume={49}, DOI={<a href=\"https://doi.org/10.1364/ao.49.003846\">10.1364/ao.49.003846</a>}, number={203846}, journal={Applied Optics}, publisher={The Optical Society}, author={Lorenz, Alexander and Schuhmann, Rolf and Kitzerow, Heinz-Siegfried}, year={2010} }","ama":"Lorenz A, Schuhmann R, Kitzerow H-S. Switchable waveguiding in two liquid-crystal-filled photonic crystal fibers. <i>Applied Optics</i>. 2010;49(20). doi:<a href=\"https://doi.org/10.1364/ao.49.003846\">10.1364/ao.49.003846</a>","mla":"Lorenz, Alexander, et al. “Switchable Waveguiding in Two Liquid-Crystal-Filled Photonic Crystal Fibers.” <i>Applied Optics</i>, vol. 49, no. 20, 3846, The Optical Society, 2010, doi:<a href=\"https://doi.org/10.1364/ao.49.003846\">10.1364/ao.49.003846</a>.","short":"A. Lorenz, R. Schuhmann, H.-S. Kitzerow, Applied Optics 49 (2010).","chicago":"Lorenz, Alexander, Rolf Schuhmann, and Heinz-Siegfried Kitzerow. “Switchable Waveguiding in Two Liquid-Crystal-Filled Photonic Crystal Fibers.” <i>Applied Optics</i> 49, no. 20 (2010). <a href=\"https://doi.org/10.1364/ao.49.003846\">https://doi.org/10.1364/ao.49.003846</a>.","ieee":"A. Lorenz, R. Schuhmann, and H.-S. Kitzerow, “Switchable waveguiding in two liquid-crystal-filled photonic crystal fibers,” <i>Applied Optics</i>, vol. 49, no. 20, Art. no. 3846, 2010, doi: <a href=\"https://doi.org/10.1364/ao.49.003846\">10.1364/ao.49.003846</a>.","apa":"Lorenz, A., Schuhmann, R., &#38; Kitzerow, H.-S. (2010). Switchable waveguiding in two liquid-crystal-filled photonic crystal fibers. <i>Applied Optics</i>, <i>49</i>(20), Article 3846. <a href=\"https://doi.org/10.1364/ao.49.003846\">https://doi.org/10.1364/ao.49.003846</a>"},"year":"2010","title":"Switchable waveguiding in two liquid-crystal-filled photonic crystal fibers","publication_identifier":{"issn":["0003-6935","1539-4522"]},"author":[{"full_name":"Lorenz, Alexander","last_name":"Lorenz","first_name":"Alexander"},{"full_name":"Schuhmann, Rolf","first_name":"Rolf","last_name":"Schuhmann"},{"last_name":"Kitzerow","first_name":"Heinz-Siegfried","full_name":"Kitzerow, Heinz-Siegfried","id":"254"}],"date_updated":"2023-01-24T18:44:16Z","publication_status":"published","intvolume":"        49","article_number":"3846","language":[{"iso":"eng"}],"doi":"10.1364/ao.49.003846","issue":"20","publication":"Applied Optics","date_created":"2023-01-24T18:43:52Z","type":"journal_article","department":[{"_id":"313"},{"_id":"230"},{"_id":"638"}]},{"date_updated":"2023-01-24T18:43:33Z","publication_status":"published","title":"Alignment and electrooptic effects in nanoparticle-doped nematic liquid crystals","status":"public","year":"2010","author":[{"full_name":"Kinkead, Brandy","last_name":"Kinkead","first_name":"Brandy"},{"first_name":"Martin","last_name":"Urbanski","full_name":"Urbanski, Martin"},{"last_name":"Qi","first_name":"Hao","full_name":"Qi, Hao"},{"id":"254","last_name":"Kitzerow","first_name":"Heinz-Siegfried","full_name":"Kitzerow, Heinz-Siegfried"},{"last_name":"Hegmann","first_name":"Torsten","full_name":"Hegmann, Torsten"}],"publication_identifier":{"issn":["0277-786X"]},"doi":"10.1117/12.858831","user_id":"254","editor":[{"first_name":"Iam Choon","last_name":"Khoo","full_name":"Khoo, Iam Choon"}],"language":[{"iso":"eng"}],"_id":"39736","publisher":"SPIE","publication":"SPIE Proceedings","citation":{"mla":"Kinkead, Brandy, et al. “Alignment and Electrooptic Effects in Nanoparticle-Doped Nematic Liquid Crystals.” <i>SPIE Proceedings</i>, edited by Iam Choon Khoo, SPIE, 2010, doi:<a href=\"https://doi.org/10.1117/12.858831\">10.1117/12.858831</a>.","ama":"Kinkead B, Urbanski M, Qi H, Kitzerow H-S, Hegmann T. Alignment and electrooptic effects in nanoparticle-doped nematic liquid crystals. In: Khoo IC, ed. <i>SPIE Proceedings</i>. SPIE; 2010. doi:<a href=\"https://doi.org/10.1117/12.858831\">10.1117/12.858831</a>","bibtex":"@inproceedings{Kinkead_Urbanski_Qi_Kitzerow_Hegmann_2010, title={Alignment and electrooptic effects in nanoparticle-doped nematic liquid crystals}, DOI={<a href=\"https://doi.org/10.1117/12.858831\">10.1117/12.858831</a>}, booktitle={SPIE Proceedings}, publisher={SPIE}, author={Kinkead, Brandy and Urbanski, Martin and Qi, Hao and Kitzerow, Heinz-Siegfried and Hegmann, Torsten}, editor={Khoo, Iam Choon}, year={2010} }","apa":"Kinkead, B., Urbanski, M., Qi, H., Kitzerow, H.-S., &#38; Hegmann, T. (2010). Alignment and electrooptic effects in nanoparticle-doped nematic liquid crystals. In I. C. Khoo (Ed.), <i>SPIE Proceedings</i>. SPIE. <a href=\"https://doi.org/10.1117/12.858831\">https://doi.org/10.1117/12.858831</a>","ieee":"B. Kinkead, M. Urbanski, H. Qi, H.-S. Kitzerow, and T. Hegmann, “Alignment and electrooptic effects in nanoparticle-doped nematic liquid crystals,” in <i>SPIE Proceedings</i>, 2010, doi: <a href=\"https://doi.org/10.1117/12.858831\">10.1117/12.858831</a>.","short":"B. Kinkead, M. Urbanski, H. Qi, H.-S. Kitzerow, T. Hegmann, in: I.C. Khoo (Ed.), SPIE Proceedings, SPIE, 2010.","chicago":"Kinkead, Brandy, Martin Urbanski, Hao Qi, Heinz-Siegfried Kitzerow, and Torsten Hegmann. “Alignment and Electrooptic Effects in Nanoparticle-Doped Nematic Liquid Crystals.” In <i>SPIE Proceedings</i>, edited by Iam Choon Khoo. SPIE, 2010. <a href=\"https://doi.org/10.1117/12.858831\">https://doi.org/10.1117/12.858831</a>."},"type":"conference","department":[{"_id":"313"},{"_id":"230"},{"_id":"638"}],"date_created":"2023-01-24T18:43:08Z"},{"year":"2010","title":"Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells","author":[{"full_name":"Duc, Huynh Thanh","first_name":"Huynh Thanh","last_name":"Duc"},{"id":"158","full_name":"Förstner, Jens","orcid":"0000-0001-7059-9862","last_name":"Förstner","first_name":"Jens"},{"id":"344","last_name":"Meier","orcid":"0000-0001-8864-2072","first_name":"Torsten","full_name":"Meier, Torsten"}],"publication_identifier":{"issn":["1098-0121","1550-235X"]},"date_updated":"2023-04-19T11:11:47Z","publication_status":"published","intvolume":"        82","article_type":"original","article_number":"115316","language":[{"iso":"eng"}],"doi":"10.1103/physrevb.82.115316","issue":"11","publication":"Physical Review B","abstract":[{"text":"The dynamics of charge and spin injection currents excited by circularly polarized, one-color laser beams in\r\nsemiconductor quantum wells is analyzed. Our microscopic approach is based on a 14x14 k · p band-structure\r\ntheory in combination with multisubband semiconductor Bloch equations which allows a detailed analysis of\r\nthe photogenerated carrier distributions and coherences in k space. Charge and spin injection currents are\r\nnumerically calculated for [110]- and [001]-grown GaAs quantum wells including dc population contributions\r\nand ac contributions that arise from intersubband coherences. The dependencies of the injection currents on the\r\nexcitation conditions, in particular, the photon energy are computed and discussed.","lang":"eng"}],"file":[{"access_level":"closed","file_size":639662,"file_name":"2010 Duc,Förstner,Meier_Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells.pdf","date_updated":"2018-08-27T10:27:00Z","relation":"main_file","success":1,"content_type":"application/pdf","file_id":"4128","creator":"hclaudia","date_created":"2018-08-27T10:27:00Z"}],"date_created":"2018-08-27T10:25:36Z","keyword":["tet_topic_qw"],"type":"journal_article","department":[{"_id":"15"},{"_id":"230"},{"_id":"293"},{"_id":"170"}],"status":"public","has_accepted_license":"1","_id":"4127","publisher":"American Physical Society (APS)","ddc":["530"],"user_id":"49063","volume":82,"file_date_updated":"2018-08-27T10:27:00Z","citation":{"short":"H.T. Duc, J. Förstner, T. Meier, Physical Review B 82 (2010).","chicago":"Duc, Huynh Thanh, Jens Förstner, and Torsten Meier. “Microscopic Analysis of Charge and Spin Photocurrents Injected by Circularly Polarized One-Color Laser Pulses in GaAs Quantum Wells.” <i>Physical Review B</i> 82, no. 11 (2010). <a href=\"https://doi.org/10.1103/physrevb.82.115316\">https://doi.org/10.1103/physrevb.82.115316</a>.","ieee":"H. T. Duc, J. Förstner, and T. Meier, “Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells,” <i>Physical Review B</i>, vol. 82, no. 11, Art. no. 115316, 2010, doi: <a href=\"https://doi.org/10.1103/physrevb.82.115316\">10.1103/physrevb.82.115316</a>.","apa":"Duc, H. T., Förstner, J., &#38; Meier, T. (2010). Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells. <i>Physical Review B</i>, <i>82</i>(11), Article 115316. <a href=\"https://doi.org/10.1103/physrevb.82.115316\">https://doi.org/10.1103/physrevb.82.115316</a>","bibtex":"@article{Duc_Förstner_Meier_2010, title={Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells}, volume={82}, DOI={<a href=\"https://doi.org/10.1103/physrevb.82.115316\">10.1103/physrevb.82.115316</a>}, number={11115316}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Duc, Huynh Thanh and Förstner, Jens and Meier, Torsten}, year={2010} }","ama":"Duc HT, Förstner J, Meier T. Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells. <i>Physical Review B</i>. 2010;82(11). doi:<a href=\"https://doi.org/10.1103/physrevb.82.115316\">10.1103/physrevb.82.115316</a>","mla":"Duc, Huynh Thanh, et al. “Microscopic Analysis of Charge and Spin Photocurrents Injected by Circularly Polarized One-Color Laser Pulses in GaAs Quantum Wells.” <i>Physical Review B</i>, vol. 82, no. 11, 115316, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.82.115316\">10.1103/physrevb.82.115316</a>."}},{"publication":"Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV","abstract":[{"lang":"eng","text":"A microscopic theory that describes injection currents in GaAs quantum wells is presented. 14 × 14 band k.p theory is used to compute the band structure including anisotropy and spin-orbit interaction. Transient injection currents are obtained via numerical solutions of the semiconductor Bloch equations. Depending on the growth direction of the considered quantum well system and the propagation and polarization directions of the incident light beam, it is possible to generate charge and/or spin photocurrents on ultrashort time scales. The dependence of the photocurrents on the excitation conditions is computed and discussed."}],"date_created":"2018-08-28T09:00:53Z","department":[{"_id":"15"},{"_id":"293"},{"_id":"170"},{"_id":"230"}],"type":"conference","keyword":["tet_topic_qw"],"author":[{"first_name":"Huynh Thanh","last_name":"Duc","full_name":"Duc, Huynh Thanh"},{"id":"158","last_name":"Förstner","orcid":"0000-0001-7059-9862","first_name":"Jens","full_name":"Förstner, Jens"},{"full_name":"Meier, Torsten","first_name":"Torsten","orcid":"0000-0001-8864-2072","last_name":"Meier","id":"344"}],"title":"Microscopic theoretical analysis of optically generated injection currents in semiconductor quantum wells","year":"2010","intvolume":"      7600","date_updated":"2023-04-19T11:07:47Z","publication_status":"published","language":[{"iso":"eng"}],"series_title":"SPIE Proceedings","doi":"10.1117/12.840388","citation":{"apa":"Duc, H. T., Förstner, J., &#38; Meier, T. (2010). Microscopic theoretical analysis of optically generated injection currents in semiconductor quantum wells. In J.-J. Song, K.-T. Tsen, M. Betz, &#38; A. Y. Elezzabi (Eds.), <i>Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV</i> (Vol. 7600, pp. 76000S-76000S – 9). SPIE. <a href=\"https://doi.org/10.1117/12.840388\">https://doi.org/10.1117/12.840388</a>","ieee":"H. T. Duc, J. Förstner, and T. Meier, “Microscopic theoretical analysis of optically generated injection currents in semiconductor quantum wells,” in <i>Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV</i>, 2010, vol. 7600, pp. 76000S-76000S–9, doi: <a href=\"https://doi.org/10.1117/12.840388\">10.1117/12.840388</a>.","chicago":"Duc, Huynh Thanh, Jens Förstner, and Torsten Meier. “Microscopic Theoretical Analysis of Optically Generated Injection Currents in Semiconductor Quantum Wells.” In <i>Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV</i>, edited by Jin-Joo Song, Kong-Thon Tsen, Markus Betz, and Abdulhakem Y. Elezzabi, 7600:76000S-76000S – 9. SPIE Proceedings. SPIE, 2010. <a href=\"https://doi.org/10.1117/12.840388\">https://doi.org/10.1117/12.840388</a>.","short":"H.T. Duc, J. Förstner, T. Meier, in: J.-J. Song, K.-T. Tsen, M. Betz, A.Y. Elezzabi (Eds.), Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV, SPIE, 2010, pp. 76000S-76000S–9.","mla":"Duc, Huynh Thanh, et al. “Microscopic Theoretical Analysis of Optically Generated Injection Currents in Semiconductor Quantum Wells.” <i>Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV</i>, edited by Jin-Joo Song et al., vol. 7600, SPIE, 2010, pp. 76000S-76000S – 9, doi:<a href=\"https://doi.org/10.1117/12.840388\">10.1117/12.840388</a>.","ama":"Duc HT, Förstner J, Meier T. Microscopic theoretical analysis of optically generated injection currents in semiconductor quantum wells. In: Song J-J, Tsen K-T, Betz M, Elezzabi AY, eds. <i>Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV</i>. Vol 7600. SPIE Proceedings. SPIE; 2010:76000S-76000S - 9. doi:<a href=\"https://doi.org/10.1117/12.840388\">10.1117/12.840388</a>","bibtex":"@inproceedings{Duc_Förstner_Meier_2010, series={SPIE Proceedings}, title={Microscopic theoretical analysis of optically generated injection currents in semiconductor quantum wells}, volume={7600}, DOI={<a href=\"https://doi.org/10.1117/12.840388\">10.1117/12.840388</a>}, booktitle={Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV}, publisher={SPIE}, author={Duc, Huynh Thanh and Förstner, Jens and Meier, Torsten}, editor={Song, Jin-Joo and Tsen, Kong-Thon and Betz, Markus and Elezzabi, Abdulhakem Y.}, year={2010}, pages={76000S-76000S–9}, collection={SPIE Proceedings} }"},"status":"public","publisher":"SPIE","_id":"4176","page":"76000S-76000S-9","editor":[{"full_name":"Song, Jin-Joo","last_name":"Song","first_name":"Jin-Joo"},{"full_name":"Tsen, Kong-Thon","last_name":"Tsen","first_name":"Kong-Thon"},{"first_name":"Markus","last_name":"Betz","full_name":"Betz, Markus"},{"full_name":"Elezzabi, Abdulhakem Y.","last_name":"Elezzabi","first_name":"Abdulhakem Y."}],"volume":7600,"user_id":"49063"},{"date_updated":"2023-04-19T11:13:00Z","publication_status":"published","intvolume":"        18","year":"2010","title":"Localization of excitons in weakly disordered semiconductor structures: A model study","author":[{"full_name":"Gögh, N.","last_name":"Gögh","first_name":"N."},{"first_name":"P.","last_name":"Thomas","full_name":"Thomas, P."},{"full_name":"Kuznetsova, I.","last_name":"Kuznetsova","first_name":"I."},{"full_name":"Meier, Torsten","last_name":"Meier","orcid":"0000-0001-8864-2072","first_name":"Torsten","id":"344"},{"last_name":"Varga","first_name":"I.","full_name":"Varga, I."}],"publication_identifier":{"issn":["0003-3804","1521-3889"]},"doi":"10.1002/andp.20095211219","language":[{"iso":"eng"}],"abstract":[{"text":"We discuss transport and localization properties on the insulating side of the disorder dominated superconductor-insulator transition, described in terms of the dirty boson model. Analyzing the spectral properties of the interacting bosons in the absence of phonons, we argue that the Bose glass phase admits three distinct regimes. For strongest disorder the boson system is a fully localized, perfect insulator at any temperature. At smaller disorder, only the low temperature phase exhibits perfect insulation while delocalization takes place above a finite temperature. We argue that a third phase must intervene between these perfect insulators and the superconductor. This conducting Bose glass phase is characterized by a mobility edge in the many body spectrum, located at finite energy above the ground state. In this insulating regime purely electronically activated transport occurs, with a conductivity following an Arrhenius law at asymptotically low temperatures, while a tendency to superactivation is predicted at higher T. These predictions are in good agreement with recent transport experiments in highly disordered films of superconducting materials.","lang":"eng"}],"publication":"Annalen der Physik","issue":"12","type":"journal_article","department":[{"_id":"15"},{"_id":"170"},{"_id":"293"},{"_id":"230"}],"date_created":"2021-09-24T08:06:30Z","status":"public","user_id":"49063","volume":18,"page":"905-909","_id":"24980","citation":{"bibtex":"@article{Gögh_Thomas_Kuznetsova_Meier_Varga_2010, title={Localization of excitons in weakly disordered semiconductor structures: A model study}, volume={18}, DOI={<a href=\"https://doi.org/10.1002/andp.20095211219\">10.1002/andp.20095211219</a>}, number={12}, journal={Annalen der Physik}, author={Gögh, N. and Thomas, P. and Kuznetsova, I. and Meier, Torsten and Varga, I.}, year={2010}, pages={905–909} }","ama":"Gögh N, Thomas P, Kuznetsova I, Meier T, Varga I. Localization of excitons in weakly disordered semiconductor structures: A model study. <i>Annalen der Physik</i>. 2010;18(12):905-909. doi:<a href=\"https://doi.org/10.1002/andp.20095211219\">10.1002/andp.20095211219</a>","mla":"Gögh, N., et al. “Localization of Excitons in Weakly Disordered Semiconductor Structures: A Model Study.” <i>Annalen Der Physik</i>, vol. 18, no. 12, 2010, pp. 905–09, doi:<a href=\"https://doi.org/10.1002/andp.20095211219\">10.1002/andp.20095211219</a>.","short":"N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, I. Varga, Annalen Der Physik 18 (2010) 905–909.","chicago":"Gögh, N., P. Thomas, I. Kuznetsova, Torsten Meier, and I. Varga. “Localization of Excitons in Weakly Disordered Semiconductor Structures: A Model Study.” <i>Annalen Der Physik</i> 18, no. 12 (2010): 905–9. <a href=\"https://doi.org/10.1002/andp.20095211219\">https://doi.org/10.1002/andp.20095211219</a>.","ieee":"N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, and I. Varga, “Localization of excitons in weakly disordered semiconductor structures: A model study,” <i>Annalen der Physik</i>, vol. 18, no. 12, pp. 905–909, 2010, doi: <a href=\"https://doi.org/10.1002/andp.20095211219\">10.1002/andp.20095211219</a>.","apa":"Gögh, N., Thomas, P., Kuznetsova, I., Meier, T., &#38; Varga, I. (2010). Localization of excitons in weakly disordered semiconductor structures: A model study. <i>Annalen Der Physik</i>, <i>18</i>(12), 905–909. <a href=\"https://doi.org/10.1002/andp.20095211219\">https://doi.org/10.1002/andp.20095211219</a>"}},{"doi":"10.1002/andp.200910382","user_id":"49063","language":[{"iso":"eng"}],"_id":"23480","page":"905-909","date_updated":"2023-04-19T11:12:57Z","publication_status":"published","author":[{"first_name":"N.","last_name":"Gögh","full_name":"Gögh, N."},{"last_name":"Thomas","first_name":"P.","full_name":"Thomas, P."},{"full_name":"Kuznetsova, I.","first_name":"I.","last_name":"Kuznetsova"},{"full_name":"Meier, Torsten","last_name":"Meier","first_name":"Torsten","orcid":"0000-0001-8864-2072","id":"344"},{"full_name":"Varga, I.","last_name":"Varga","first_name":"I."}],"publication_identifier":{"issn":["0003-3804","1521-3889"]},"title":"Localization of excitons in weakly disordered semiconductor structures: A model study","year":"2010","status":"public","department":[{"_id":"15"},{"_id":"170"},{"_id":"293"},{"_id":"230"}],"type":"journal_article","date_created":"2021-08-24T08:58:35Z","abstract":[{"lang":"eng","text":"We discuss transport and localization properties on the insulating side of the disorder dominated superconductor-insulator transition, described in terms of the dirty boson model. Analyzing the spectral properties of the interacting bosons in the absence of phonons, we argue that the Bose glass phase admits three distinct regimes. For strongest disorder the boson system is a fully localized, perfect insulator at any temperature. At smaller disorder, only the low temperature phase exhibits perfect insulation while delocalization takes place above a finite temperature. We argue that a third phase must intervene between these perfect insulators and the superconductor. This conducting Bose glass phase is characterized by a mobility edge in the many body spectrum, located at finite energy above the ground state. In this insulating regime purely electronically activated transport occurs, with a conductivity following an Arrhenius law at asymptotically low temperatures, while a tendency to superactivation is predicted at higher T. These predictions are in good agreement with recent transport experiments in highly disordered films of superconducting materials."}],"citation":{"apa":"Gögh, N., Thomas, P., Kuznetsova, I., Meier, T., &#38; Varga, I. (2010). Localization of excitons in weakly disordered semiconductor structures: A model study. <i>Annalen Der Physik</i>, <i>12</i>, 905–909. <a href=\"https://doi.org/10.1002/andp.200910382\">https://doi.org/10.1002/andp.200910382</a>","ieee":"N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, and I. Varga, “Localization of excitons in weakly disordered semiconductor structures: A model study,” <i>Annalen der Physik</i>, no. 12, pp. 905–909, 2010, doi: <a href=\"https://doi.org/10.1002/andp.200910382\">10.1002/andp.200910382</a>.","chicago":"Gögh, N., P. Thomas, I. Kuznetsova, Torsten Meier, and I. Varga. “Localization of Excitons in Weakly Disordered Semiconductor Structures: A Model Study.” <i>Annalen Der Physik</i>, no. 12 (2010): 905–9. <a href=\"https://doi.org/10.1002/andp.200910382\">https://doi.org/10.1002/andp.200910382</a>.","short":"N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, I. Varga, Annalen Der Physik (2010) 905–909.","mla":"Gögh, N., et al. “Localization of Excitons in Weakly Disordered Semiconductor Structures: A Model Study.” <i>Annalen Der Physik</i>, no. 12, 2010, pp. 905–09, doi:<a href=\"https://doi.org/10.1002/andp.200910382\">10.1002/andp.200910382</a>.","ama":"Gögh N, Thomas P, Kuznetsova I, Meier T, Varga I. Localization of excitons in weakly disordered semiconductor structures: A model study. <i>Annalen der Physik</i>. 2010;(12):905-909. doi:<a href=\"https://doi.org/10.1002/andp.200910382\">10.1002/andp.200910382</a>","bibtex":"@article{Gögh_Thomas_Kuznetsova_Meier_Varga_2010, title={Localization of excitons in weakly disordered semiconductor structures: A model study}, DOI={<a href=\"https://doi.org/10.1002/andp.200910382\">10.1002/andp.200910382</a>}, number={12}, journal={Annalen der Physik}, author={Gögh, N. and Thomas, P. and Kuznetsova, I. and Meier, Torsten and Varga, I.}, year={2010}, pages={905–909} }"},"publication":"Annalen der Physik","issue":"12"},{"_id":"13581","page":"133-136","volume":7,"user_id":"16199","status":"public","citation":{"ama":"Wippermann S, Schmidt WG, Bechstedt F, et al. Optical anisotropy of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles. <i>physica status solidi (c)</i>. 2010;7(2):133-136. doi:<a href=\"https://doi.org/10.1002/pssc.200982413\">10.1002/pssc.200982413</a>","bibtex":"@article{Wippermann_Schmidt_Bechstedt_Chandola_Hinrichs_Gensch_Esser_Fleischer_McGilp_2010, title={Optical anisotropy of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles}, volume={7}, DOI={<a href=\"https://doi.org/10.1002/pssc.200982413\">10.1002/pssc.200982413</a>}, number={2}, journal={physica status solidi (c)}, author={Wippermann, S. and Schmidt, Wolf Gero and Bechstedt, F. and Chandola, S. and Hinrichs, K. and Gensch, M. and Esser, N. and Fleischer, K. and McGilp, J. F.}, year={2010}, pages={133–136} }","mla":"Wippermann, S., et al. “Optical Anisotropy of Si(111)-(4 × 1)/(8 × 2)-In Nanowires Calculated Fromfirst-Principles.” <i>Physica Status Solidi (c)</i>, vol. 7, no. 2, 2010, pp. 133–36, doi:<a href=\"https://doi.org/10.1002/pssc.200982413\">10.1002/pssc.200982413</a>.","short":"S. Wippermann, W.G. Schmidt, F. Bechstedt, S. Chandola, K. Hinrichs, M. Gensch, N. Esser, K. Fleischer, J.F. McGilp, Physica Status Solidi (c) 7 (2010) 133–136.","chicago":"Wippermann, S., Wolf Gero Schmidt, F. Bechstedt, S. Chandola, K. Hinrichs, M. Gensch, N. Esser, K. Fleischer, and J. F. McGilp. “Optical Anisotropy of Si(111)-(4 × 1)/(8 × 2)-In Nanowires Calculated Fromfirst-Principles.” <i>Physica Status Solidi (c)</i> 7, no. 2 (2010): 133–36. <a href=\"https://doi.org/10.1002/pssc.200982413\">https://doi.org/10.1002/pssc.200982413</a>.","apa":"Wippermann, S., Schmidt, W. G., Bechstedt, F., Chandola, S., Hinrichs, K., Gensch, M., Esser, N., Fleischer, K., &#38; McGilp, J. F. (2010). Optical anisotropy of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles. <i>Physica Status Solidi (c)</i>, <i>7</i>(2), 133–136. <a href=\"https://doi.org/10.1002/pssc.200982413\">https://doi.org/10.1002/pssc.200982413</a>","ieee":"S. Wippermann <i>et al.</i>, “Optical anisotropy of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles,” <i>physica status solidi (c)</i>, vol. 7, no. 2, pp. 133–136, 2010, doi: <a href=\"https://doi.org/10.1002/pssc.200982413\">10.1002/pssc.200982413</a>."},"project":[{"_id":"52","name":"Computing Resources Provided by the Paderborn Center for Parallel Computing"}],"language":[{"iso":"eng"}],"doi":"10.1002/pssc.200982413","author":[{"full_name":"Wippermann, S.","last_name":"Wippermann","first_name":"S."},{"full_name":"Schmidt, Wolf Gero","last_name":"Schmidt","first_name":"Wolf Gero","orcid":"0000-0002-2717-5076","id":"468"},{"first_name":"F.","last_name":"Bechstedt","full_name":"Bechstedt, F."},{"full_name":"Chandola, S.","last_name":"Chandola","first_name":"S."},{"full_name":"Hinrichs, K.","last_name":"Hinrichs","first_name":"K."},{"last_name":"Gensch","first_name":"M.","full_name":"Gensch, M."},{"first_name":"N.","last_name":"Esser","full_name":"Esser, N."},{"full_name":"Fleischer, K.","last_name":"Fleischer","first_name":"K."},{"last_name":"McGilp","first_name":"J. F.","full_name":"McGilp, J. F."}],"publication_identifier":{"issn":["1862-6351","1610-1642"]},"year":"2010","title":"Optical anisotropy of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles","intvolume":"         7","date_updated":"2025-12-05T12:45:21Z","publication_status":"published","date_created":"2019-10-01T14:34:59Z","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"type":"journal_article","issue":"2","publication":"physica status solidi (c)"},{"volume":7,"ddc":["530"],"user_id":"16199","publisher":"Wiley-VCH","_id":"13573","page":"362-365","has_accepted_license":"1","conference":{"location":"Weimar","start_date":"2009-07-05","name":"12th International Conference on the Formation of Semiconductor Interfaces","end_date":"2009-07-10"},"status":"public","external_id":{"isi":["000284313000057"]},"project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"quality_controlled":"1","isi":"1","citation":{"chicago":"Thierfelder, Christian, Simone Sanna, Arno Schindlmayr, and Wolf Gero Schmidt. “Do We Know the Band Gap of Lithium Niobate?” <i>Physica Status Solidi C</i> 7, no. 2 (2010): 362–65. <a href=\"https://doi.org/10.1002/pssc.200982473\">https://doi.org/10.1002/pssc.200982473</a>.","short":"C. Thierfelder, S. Sanna, A. Schindlmayr, W.G. Schmidt, Physica Status Solidi C 7 (2010) 362–365.","apa":"Thierfelder, C., Sanna, S., Schindlmayr, A., &#38; Schmidt, W. G. (2010). Do we know the band gap of lithium niobate? <i>Physica Status Solidi C</i>, <i>7</i>(2), 362–365. <a href=\"https://doi.org/10.1002/pssc.200982473\">https://doi.org/10.1002/pssc.200982473</a>","ieee":"C. Thierfelder, S. Sanna, A. Schindlmayr, and W. G. Schmidt, “Do we know the band gap of lithium niobate?,” <i>Physica Status Solidi C</i>, vol. 7, no. 2, pp. 362–365, 2010, doi: <a href=\"https://doi.org/10.1002/pssc.200982473\">10.1002/pssc.200982473</a>.","ama":"Thierfelder C, Sanna S, Schindlmayr A, Schmidt WG. Do we know the band gap of lithium niobate? <i>Physica Status Solidi C</i>. 2010;7(2):362-365. doi:<a href=\"https://doi.org/10.1002/pssc.200982473\">10.1002/pssc.200982473</a>","bibtex":"@article{Thierfelder_Sanna_Schindlmayr_Schmidt_2010, title={Do we know the band gap of lithium niobate?}, volume={7}, DOI={<a href=\"https://doi.org/10.1002/pssc.200982473\">10.1002/pssc.200982473</a>}, number={2}, journal={Physica Status Solidi C}, publisher={Wiley-VCH}, author={Thierfelder, Christian and Sanna, Simone and Schindlmayr, Arno and Schmidt, Wolf Gero}, year={2010}, pages={362–365} }","mla":"Thierfelder, Christian, et al. “Do We Know the Band Gap of Lithium Niobate?” <i>Physica Status Solidi C</i>, vol. 7, no. 2, Wiley-VCH, 2010, pp. 362–65, doi:<a href=\"https://doi.org/10.1002/pssc.200982473\">10.1002/pssc.200982473</a>."},"file_date_updated":"2020-08-30T15:07:56Z","doi":"10.1002/pssc.200982473","language":[{"iso":"eng"}],"intvolume":"         7","article_type":"original","date_updated":"2025-12-05T13:01:45Z","publication_status":"published","publication_identifier":{"eissn":["1610-1642"],"issn":["1862-6351"]},"author":[{"full_name":"Thierfelder, Christian","first_name":"Christian","last_name":"Thierfelder"},{"full_name":"Sanna, Simone","first_name":"Simone","last_name":"Sanna"},{"id":"458","full_name":"Schindlmayr, Arno","last_name":"Schindlmayr","first_name":"Arno","orcid":"0000-0002-4855-071X"},{"id":"468","orcid":"0000-0002-2717-5076","last_name":"Schmidt","first_name":"Wolf Gero","full_name":"Schmidt, Wolf Gero"}],"title":"Do we know the band gap of lithium niobate?","year":"2010","department":[{"_id":"295"},{"_id":"296"},{"_id":"15"},{"_id":"35"},{"_id":"230"},{"_id":"27"},{"_id":"170"}],"type":"journal_article","date_created":"2019-10-01T09:18:29Z","file":[{"creator":"schindlm","description":"© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim","date_created":"2020-08-28T14:39:40Z","relation":"main_file","date_updated":"2020-08-30T15:07:56Z","file_name":"pssc.200982473.pdf","access_level":"closed","file_size":212674,"title":"Do we know the band gap of lithium niobate?","file_id":"18583","content_type":"application/pdf"}],"abstract":[{"lang":"eng","text":"Given the vast range of lithium niobate (LiNbO3) applications, the knowledge about its electronic and optical properties is surprisingly limited. The direct band gap of 3.7 eV for the ferroelectric phase – frequently cited in the literature – is concluded from optical experiments. Recent theoretical investigations show that the electronic band‐structure and optical properties are very sensitive to quasiparticle and electron‐hole attraction effects, which were included using the GW approximation for the electron self‐energy and the Bethe‐Salpeter equation respectively, both based on a model screening function. The calculated fundamental gap was found to be at least 1 eV larger than the experimental value. To resolve this discrepancy we performed first‐principles GW calculations for lithium niobate using the full‐potential linearized augmented plane‐wave (FLAPW) method. Thereby we use the parameter‐free random phase approximation for a realistic description of the nonlocal and energydependent screening. This leads to a band gap of about 4.7 (4.2) eV for ferro(para)‐electric lithium niobate."}],"publication":"Physica Status Solidi C","issue":"2"},{"page":"157-160","_id":"13574","user_id":"16199","volume":7,"status":"public","citation":{"bibtex":"@article{Gerstmann_Rohrmüller_Mauri_Schmidt_2010, title={Ab initiog-tensor calculation for paramagnetic surface states: hydrogen adsorption at Si surfaces}, volume={7}, DOI={<a href=\"https://doi.org/10.1002/pssc.200982462\">10.1002/pssc.200982462</a>}, number={2}, journal={physica status solidi (c)}, author={Gerstmann, Uwe and Rohrmüller, M. and Mauri, F. and Schmidt, Wolf Gero}, year={2010}, pages={157–160} }","ama":"Gerstmann U, Rohrmüller M, Mauri F, Schmidt WG. Ab initiog-tensor calculation for paramagnetic surface states: hydrogen adsorption at Si surfaces. <i>physica status solidi (c)</i>. 2010;7(2):157-160. doi:<a href=\"https://doi.org/10.1002/pssc.200982462\">10.1002/pssc.200982462</a>","mla":"Gerstmann, Uwe, et al. “Ab Initiog-Tensor Calculation for Paramagnetic Surface States: Hydrogen Adsorption at Si Surfaces.” <i>Physica Status Solidi (c)</i>, vol. 7, no. 2, 2010, pp. 157–60, doi:<a href=\"https://doi.org/10.1002/pssc.200982462\">10.1002/pssc.200982462</a>.","chicago":"Gerstmann, Uwe, M. Rohrmüller, F. Mauri, and Wolf Gero Schmidt. “Ab Initiog-Tensor Calculation for Paramagnetic Surface States: Hydrogen Adsorption at Si Surfaces.” <i>Physica Status Solidi (c)</i> 7, no. 2 (2010): 157–60. <a href=\"https://doi.org/10.1002/pssc.200982462\">https://doi.org/10.1002/pssc.200982462</a>.","short":"U. Gerstmann, M. Rohrmüller, F. Mauri, W.G. Schmidt, Physica Status Solidi (c) 7 (2010) 157–160.","ieee":"U. Gerstmann, M. Rohrmüller, F. Mauri, and W. G. Schmidt, “Ab initiog-tensor calculation for paramagnetic surface states: hydrogen adsorption at Si surfaces,” <i>physica status solidi (c)</i>, vol. 7, no. 2, pp. 157–160, 2010, doi: <a href=\"https://doi.org/10.1002/pssc.200982462\">10.1002/pssc.200982462</a>.","apa":"Gerstmann, U., Rohrmüller, M., Mauri, F., &#38; Schmidt, W. G. (2010). Ab initiog-tensor calculation for paramagnetic surface states: hydrogen adsorption at Si surfaces. <i>Physica Status Solidi (c)</i>, <i>7</i>(2), 157–160. <a href=\"https://doi.org/10.1002/pssc.200982462\">https://doi.org/10.1002/pssc.200982462</a>"},"project":[{"_id":"52","name":"Computing Resources Provided by the Paderborn Center for Parallel Computing"}],"language":[{"iso":"eng"}],"doi":"10.1002/pssc.200982462","year":"2010","title":"Ab initiog-tensor calculation for paramagnetic surface states: hydrogen adsorption at Si surfaces","author":[{"full_name":"Gerstmann, Uwe","orcid":"0000-0002-4476-223X","last_name":"Gerstmann","first_name":"Uwe","id":"171"},{"first_name":"M.","last_name":"Rohrmüller","full_name":"Rohrmüller, M."},{"last_name":"Mauri","first_name":"F.","full_name":"Mauri, F."},{"orcid":"0000-0002-2717-5076","first_name":"Wolf Gero","last_name":"Schmidt","full_name":"Schmidt, Wolf Gero","id":"468"}],"publication_identifier":{"issn":["1862-6351","1610-1642"]},"date_updated":"2025-12-05T12:45:54Z","publication_status":"published","intvolume":"         7","date_created":"2019-10-01T09:20:03Z","type":"journal_article","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"790"},{"_id":"230"},{"_id":"27"}],"issue":"2","publication":"physica status solidi (c)"},{"user_id":"16199","doi":"10.1103/physrevb.80.205205","volume":80,"language":[{"iso":"eng"}],"_id":"13656","publication_status":"published","date_updated":"2025-12-05T13:14:00Z","intvolume":"        80","year":"2010","title":"Manganese-hydrogen complexes inGa1−xMnxN","status":"public","publication_identifier":{"issn":["1098-0121","1550-235X"]},"author":[{"full_name":"Bihler, C.","last_name":"Bihler","first_name":"C."},{"first_name":"Uwe","orcid":"0000-0002-4476-223X","last_name":"Gerstmann","full_name":"Gerstmann, Uwe","id":"171"},{"last_name":"Hoeb","first_name":"M.","full_name":"Hoeb, M."},{"first_name":"T.","last_name":"Graf","full_name":"Graf, T."},{"last_name":"Gjukic","first_name":"M.","full_name":"Gjukic, M."},{"id":"468","full_name":"Schmidt, Wolf Gero","orcid":"0000-0002-2717-5076","last_name":"Schmidt","first_name":"Wolf Gero"},{"last_name":"Stutzmann","first_name":"M.","full_name":"Stutzmann, M."},{"full_name":"Brandt, M. S.","first_name":"M. S.","last_name":"Brandt"}],"type":"journal_article","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"790"},{"_id":"35"},{"_id":"230"}],"date_created":"2019-10-09T09:00:28Z","publication":"Physical Review B","issue":"20","citation":{"chicago":"Bihler, C., Uwe Gerstmann, M. Hoeb, T. Graf, M. Gjukic, Wolf Gero Schmidt, M. Stutzmann, and M. S. Brandt. “Manganese-Hydrogen Complexes InGa1−xMnxN.” <i>Physical Review B</i> 80, no. 20 (2010). <a href=\"https://doi.org/10.1103/physrevb.80.205205\">https://doi.org/10.1103/physrevb.80.205205</a>.","ama":"Bihler C, Gerstmann U, Hoeb M, et al. Manganese-hydrogen complexes inGa1−xMnxN. <i>Physical Review B</i>. 2010;80(20). doi:<a href=\"https://doi.org/10.1103/physrevb.80.205205\">10.1103/physrevb.80.205205</a>","short":"C. Bihler, U. Gerstmann, M. Hoeb, T. Graf, M. Gjukic, W.G. Schmidt, M. Stutzmann, M.S. Brandt, Physical Review B 80 (2010).","bibtex":"@article{Bihler_Gerstmann_Hoeb_Graf_Gjukic_Schmidt_Stutzmann_Brandt_2010, title={Manganese-hydrogen complexes inGa1−xMnxN}, volume={80}, DOI={<a href=\"https://doi.org/10.1103/physrevb.80.205205\">10.1103/physrevb.80.205205</a>}, number={20}, journal={Physical Review B}, author={Bihler, C. and Gerstmann, Uwe and Hoeb, M. and Graf, T. and Gjukic, M. and Schmidt, Wolf Gero and Stutzmann, M. and Brandt, M. S.}, year={2010} }","mla":"Bihler, C., et al. “Manganese-Hydrogen Complexes InGa1−xMnxN.” <i>Physical Review B</i>, vol. 80, no. 20, 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.80.205205\">10.1103/physrevb.80.205205</a>.","apa":"Bihler, C., Gerstmann, U., Hoeb, M., Graf, T., Gjukic, M., Schmidt, W. G., Stutzmann, M., &#38; Brandt, M. S. (2010). Manganese-hydrogen complexes inGa1−xMnxN. <i>Physical Review B</i>, <i>80</i>(20). <a href=\"https://doi.org/10.1103/physrevb.80.205205\">https://doi.org/10.1103/physrevb.80.205205</a>","ieee":"C. Bihler <i>et al.</i>, “Manganese-hydrogen complexes inGa1−xMnxN,” <i>Physical Review B</i>, vol. 80, no. 20, 2010, doi: <a href=\"https://doi.org/10.1103/physrevb.80.205205\">10.1103/physrevb.80.205205</a>."}},{"year":"2010","title":"Dynamics of photoexcitation and stimulated optical emission in conjugated polymers: A multiscale quantum-chemistry and Maxwell-Bloch-equations approach","author":[{"id":"27271","full_name":"Schumacher, Stefan","orcid":"0000-0003-4042-4951","first_name":"Stefan","last_name":"Schumacher"},{"first_name":"Ian","last_name":"Galbraith","full_name":"Galbraith, Ian"},{"last_name":"Ruseckas","first_name":"Arvydas","full_name":"Ruseckas, Arvydas"},{"full_name":"Turnbull, Graham A.","first_name":"Graham A.","last_name":"Turnbull"},{"last_name":"Samuel","first_name":"Ifor D. W.","full_name":"Samuel, Ifor D. W."}],"publication_identifier":{"issn":["1098-0121","1550-235X"]},"date_updated":"2025-12-05T15:09:27Z","publication_status":"published","intvolume":"        81","article_number":"245407","language":[{"iso":"eng"}],"doi":"10.1103/physrevb.81.245407","issue":"24","publication":"Physical Review B","date_created":"2025-12-05T15:08:55Z","type":"journal_article","department":[{"_id":"15"},{"_id":"170"},{"_id":"297"},{"_id":"35"},{"_id":"230"}],"status":"public","_id":"62930","publisher":"American Physical Society (APS)","user_id":"16199","volume":81,"citation":{"ieee":"S. Schumacher, I. Galbraith, A. Ruseckas, G. A. Turnbull, and I. D. W. Samuel, “Dynamics of photoexcitation and stimulated optical emission in conjugated polymers: A multiscale quantum-chemistry and Maxwell-Bloch-equations approach,” <i>Physical Review B</i>, vol. 81, no. 24, Art. no. 245407, 2010, doi: <a href=\"https://doi.org/10.1103/physrevb.81.245407\">10.1103/physrevb.81.245407</a>.","apa":"Schumacher, S., Galbraith, I., Ruseckas, A., Turnbull, G. A., &#38; Samuel, I. D. W. (2010). Dynamics of photoexcitation and stimulated optical emission in conjugated polymers: A multiscale quantum-chemistry and Maxwell-Bloch-equations approach. <i>Physical Review B</i>, <i>81</i>(24), Article 245407. <a href=\"https://doi.org/10.1103/physrevb.81.245407\">https://doi.org/10.1103/physrevb.81.245407</a>","short":"S. Schumacher, I. Galbraith, A. Ruseckas, G.A. Turnbull, I.D.W. Samuel, Physical Review B 81 (2010).","chicago":"Schumacher, Stefan, Ian Galbraith, Arvydas Ruseckas, Graham A. Turnbull, and Ifor D. W. Samuel. “Dynamics of Photoexcitation and Stimulated Optical Emission in Conjugated Polymers: A Multiscale Quantum-Chemistry and Maxwell-Bloch-Equations Approach.” <i>Physical Review B</i> 81, no. 24 (2010). <a href=\"https://doi.org/10.1103/physrevb.81.245407\">https://doi.org/10.1103/physrevb.81.245407</a>.","mla":"Schumacher, Stefan, et al. “Dynamics of Photoexcitation and Stimulated Optical Emission in Conjugated Polymers: A Multiscale Quantum-Chemistry and Maxwell-Bloch-Equations Approach.” <i>Physical Review B</i>, vol. 81, no. 24, 245407, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.81.245407\">10.1103/physrevb.81.245407</a>.","bibtex":"@article{Schumacher_Galbraith_Ruseckas_Turnbull_Samuel_2010, title={Dynamics of photoexcitation and stimulated optical emission in conjugated polymers: A multiscale quantum-chemistry and Maxwell-Bloch-equations approach}, volume={81}, DOI={<a href=\"https://doi.org/10.1103/physrevb.81.245407\">10.1103/physrevb.81.245407</a>}, number={24245407}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Schumacher, Stefan and Galbraith, Ian and Ruseckas, Arvydas and Turnbull, Graham A. and Samuel, Ifor D. W.}, year={2010} }","ama":"Schumacher S, Galbraith I, Ruseckas A, Turnbull GA, Samuel IDW. Dynamics of photoexcitation and stimulated optical emission in conjugated polymers: A multiscale quantum-chemistry and Maxwell-Bloch-equations approach. <i>Physical Review B</i>. 2010;81(24). doi:<a href=\"https://doi.org/10.1103/physrevb.81.245407\">10.1103/physrevb.81.245407</a>"}},{"status":"public","user_id":"16199","volume":7,"page":"415-417","_id":"13839","funded_apc":"1","project":[{"_id":"52","name":"Computing Resources Provided by the Paderborn Center for Parallel Computing"}],"citation":{"ieee":"S. Blankenburg and W. G. Schmidt, “Temperature dependent stability of self-assembled molecular rows,” <i>physica status solidi (c)</i>, vol. 7, no. 2, pp. 415–417, 2010, doi: <a href=\"https://doi.org/10.1002/pssc.200982460\">10.1002/pssc.200982460</a>.","mla":"Blankenburg, S., and Wolf Gero Schmidt. “Temperature Dependent Stability of Self-Assembled Molecular Rows.” <i>Physica Status Solidi (c)</i>, vol. 7, no. 2, 2010, pp. 415–17, doi:<a href=\"https://doi.org/10.1002/pssc.200982460\">10.1002/pssc.200982460</a>.","apa":"Blankenburg, S., &#38; Schmidt, W. G. (2010). Temperature dependent stability of self-assembled molecular rows. <i>Physica Status Solidi (c)</i>, <i>7</i>(2), 415–417. <a href=\"https://doi.org/10.1002/pssc.200982460\">https://doi.org/10.1002/pssc.200982460</a>","bibtex":"@article{Blankenburg_Schmidt_2010, title={Temperature dependent stability of self-assembled molecular rows}, volume={7}, DOI={<a href=\"https://doi.org/10.1002/pssc.200982460\">10.1002/pssc.200982460</a>}, number={2}, journal={physica status solidi (c)}, author={Blankenburg, S. and Schmidt, Wolf Gero}, year={2010}, pages={415–417} }","short":"S. Blankenburg, W.G. Schmidt, Physica Status Solidi (c) 7 (2010) 415–417.","ama":"Blankenburg S, Schmidt WG. Temperature dependent stability of self-assembled molecular rows. <i>physica status solidi (c)</i>. 2010;7(2):415-417. doi:<a href=\"https://doi.org/10.1002/pssc.200982460\">10.1002/pssc.200982460</a>","chicago":"Blankenburg, S., and Wolf Gero Schmidt. “Temperature Dependent Stability of Self-Assembled Molecular Rows.” <i>Physica Status Solidi (c)</i> 7, no. 2 (2010): 415–17. <a href=\"https://doi.org/10.1002/pssc.200982460\">https://doi.org/10.1002/pssc.200982460</a>."},"publication_status":"published","date_updated":"2025-12-16T07:36:06Z","intvolume":"         7","title":"Temperature dependent stability of self-assembled molecular rows","year":"2010","publication_identifier":{"issn":["1862-6351","1610-1642"]},"author":[{"full_name":"Blankenburg, S.","first_name":"S.","last_name":"Blankenburg"},{"id":"468","orcid":"0000-0002-2717-5076","last_name":"Schmidt","first_name":"Wolf Gero","full_name":"Schmidt, Wolf Gero"}],"doi":"10.1002/pssc.200982460","language":[{"iso":"eng"}],"issue":"2","publication":"physica status solidi (c)","type":"journal_article","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"date_created":"2019-10-15T07:47:46Z"},{"issue":"7-8","publication":"physica status solidi (c)","date_created":"2019-10-15T07:46:44Z","type":"journal_article","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"year":"2010","title":"GaN growth on LiNbO3 (0001) - a first-principles simulation","author":[{"full_name":"Sanna, Simone","first_name":"Simone","last_name":"Sanna"},{"id":"468","full_name":"Schmidt, Wolf Gero","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero","last_name":"Schmidt"}],"publication_identifier":{"issn":["1862-6351","1610-1642"]},"publication_status":"published","date_updated":"2025-12-16T07:36:34Z","intvolume":"         7","language":[{"iso":"eng"}],"doi":"10.1002/pssc.200983649","citation":{"ieee":"S. Sanna and W. G. Schmidt, “GaN growth on LiNbO3 (0001) - a first-principles simulation,” <i>physica status solidi (c)</i>, vol. 7, no. 7–8, pp. 2272–2274, 2010, doi: <a href=\"https://doi.org/10.1002/pssc.200983649\">10.1002/pssc.200983649</a>.","apa":"Sanna, S., &#38; Schmidt, W. G. (2010). GaN growth on LiNbO3 (0001) - a first-principles simulation. <i>Physica Status Solidi (c)</i>, <i>7</i>(7–8), 2272–2274. <a href=\"https://doi.org/10.1002/pssc.200983649\">https://doi.org/10.1002/pssc.200983649</a>","chicago":"Sanna, Simone, and Wolf Gero Schmidt. “GaN Growth on LiNbO3 (0001) - a First-Principles Simulation.” <i>Physica Status Solidi (c)</i> 7, no. 7–8 (2010): 2272–74. <a href=\"https://doi.org/10.1002/pssc.200983649\">https://doi.org/10.1002/pssc.200983649</a>.","short":"S. Sanna, W.G. Schmidt, Physica Status Solidi (c) 7 (2010) 2272–2274.","mla":"Sanna, Simone, and Wolf Gero Schmidt. “GaN Growth on LiNbO3 (0001) - a First-Principles Simulation.” <i>Physica Status Solidi (c)</i>, vol. 7, no. 7–8, 2010, pp. 2272–74, doi:<a href=\"https://doi.org/10.1002/pssc.200983649\">10.1002/pssc.200983649</a>.","bibtex":"@article{Sanna_Schmidt_2010, title={GaN growth on LiNbO3 (0001) - a first-principles simulation}, volume={7}, DOI={<a href=\"https://doi.org/10.1002/pssc.200983649\">10.1002/pssc.200983649</a>}, number={7–8}, journal={physica status solidi (c)}, author={Sanna, Simone and Schmidt, Wolf Gero}, year={2010}, pages={2272–2274} }","ama":"Sanna S, Schmidt WG. GaN growth on LiNbO3 (0001) - a first-principles simulation. <i>physica status solidi (c)</i>. 2010;7(7-8):2272-2274. doi:<a href=\"https://doi.org/10.1002/pssc.200983649\">10.1002/pssc.200983649</a>"},"project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"status":"public","page":"2272-2274","_id":"13838","funded_apc":"1","user_id":"16199","volume":7},{"citation":{"ama":"Scholle A, Greulich-Weber S, Rauls E, Schmidt WG, Gerstmann U. Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC. <i>Materials Science Forum</i>. 2010;645-648:403-406. doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.645-648.403\">10.4028/www.scientific.net/msf.645-648.403</a>","bibtex":"@article{Scholle_Greulich-Weber_Rauls_Schmidt_Gerstmann_2010, title={Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC}, volume={645–648}, DOI={<a href=\"https://doi.org/10.4028/www.scientific.net/msf.645-648.403\">10.4028/www.scientific.net/msf.645-648.403</a>}, journal={Materials Science Forum}, author={Scholle, Andreas and Greulich-Weber, Siegmund and Rauls, Eva and Schmidt, Wolf Gero and Gerstmann, Uwe}, year={2010}, pages={403–406} }","mla":"Scholle, Andreas, et al. “Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC.” <i>Materials Science Forum</i>, vol. 645–648, 2010, pp. 403–06, doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.645-648.403\">10.4028/www.scientific.net/msf.645-648.403</a>.","short":"A. Scholle, S. Greulich-Weber, E. Rauls, W.G. Schmidt, U. Gerstmann, Materials Science Forum 645–648 (2010) 403–406.","chicago":"Scholle, Andreas, Siegmund Greulich-Weber, Eva Rauls, Wolf Gero Schmidt, and Uwe Gerstmann. “Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC.” <i>Materials Science Forum</i> 645–648 (2010): 403–6. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.645-648.403\">https://doi.org/10.4028/www.scientific.net/msf.645-648.403</a>.","apa":"Scholle, A., Greulich-Weber, S., Rauls, E., Schmidt, W. G., &#38; Gerstmann, U. (2010). Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC. <i>Materials Science Forum</i>, <i>645–648</i>, 403–406. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.645-648.403\">https://doi.org/10.4028/www.scientific.net/msf.645-648.403</a>","ieee":"A. Scholle, S. Greulich-Weber, E. Rauls, W. G. Schmidt, and U. Gerstmann, “Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC,” <i>Materials Science Forum</i>, vol. 645–648, pp. 403–406, 2010, doi: <a href=\"https://doi.org/10.4028/www.scientific.net/msf.645-648.403\">10.4028/www.scientific.net/msf.645-648.403</a>."},"publication":"Materials Science Forum","abstract":[{"text":"<jats:p>In non-annealed 6H-SiC samples that were electron irradiated at room temperature, a new EPR signal due to a S=1 defect center with exceptionally large zero-field splitting (D = +652•10-4 cm-1) has been observed under illumination. A positive sign of D demonstrates that the spin-orbit contribution to the zero-field splitting exceeds by far that of the spin-spin interaction. A principal axis of the fine structure tilted by 59° against the crystal c-axis as well as the exceptionally high zero-field splitting D can be qualitatively understood by the occurrence of additional close-lying defect levels in defect clusters resulting in comparatively large second-order spin-orbit coup¬ling. A tentative assignment to vacancy clusters is supported by the observed annealing behavior.  </jats:p>","lang":"eng"}],"date_created":"2019-10-15T07:44:38Z","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"790"},{"_id":"35"},{"_id":"230"}],"type":"journal_article","publication_identifier":{"issn":["1662-9752"]},"author":[{"first_name":"Andreas","last_name":"Scholle","full_name":"Scholle, Andreas"},{"last_name":"Greulich-Weber","first_name":"Siegmund","full_name":"Greulich-Weber, Siegmund"},{"first_name":"Eva","last_name":"Rauls","full_name":"Rauls, Eva"},{"first_name":"Wolf Gero","orcid":"0000-0002-2717-5076","last_name":"Schmidt","full_name":"Schmidt, Wolf Gero","id":"468"},{"last_name":"Gerstmann","orcid":"0000-0002-4476-223X","first_name":"Uwe","full_name":"Gerstmann, Uwe","id":"171"}],"status":"public","year":"2010","title":"Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC","publication_status":"published","date_updated":"2025-12-16T07:45:12Z","language":[{"iso":"eng"}],"_id":"13837","page":"403-406","volume":"645-648","user_id":"16199","doi":"10.4028/www.scientific.net/msf.645-648.403"},{"language":[{"iso":"eng"}],"doi":"10.1002/pssc.200982423","title":"Dissociative and molecular adsorption of water onα-Al2O3(0001)","year":"2010","author":[{"first_name":"S.","last_name":"Wippermann","full_name":"Wippermann, S."},{"id":"468","full_name":"Schmidt, Wolf Gero","first_name":"Wolf Gero","orcid":"0000-0002-2717-5076","last_name":"Schmidt"},{"first_name":"P.","last_name":"Thissen","full_name":"Thissen, P."},{"id":"194","first_name":"Guido","last_name":"Grundmeier","full_name":"Grundmeier, Guido"}],"publication_identifier":{"issn":["1862-6351","1610-1642"]},"date_updated":"2025-12-16T07:43:16Z","publication_status":"published","intvolume":"         7","date_created":"2019-10-15T07:55:59Z","type":"journal_article","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"2"},{"_id":"302"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"publication":"physica status solidi (c)","issue":"2","page":"137-140","_id":"13843","funded_apc":"1","user_id":"16199","volume":7,"status":"public","citation":{"mla":"Wippermann, S., et al. “Dissociative and Molecular Adsorption of Water Onα-Al2O3(0001).” <i>Physica Status Solidi (c)</i>, vol. 7, no. 2, 2010, pp. 137–40, doi:<a href=\"https://doi.org/10.1002/pssc.200982423\">10.1002/pssc.200982423</a>.","ama":"Wippermann S, Schmidt WG, Thissen P, Grundmeier G. Dissociative and molecular adsorption of water onα-Al2O3(0001). <i>physica status solidi (c)</i>. 2010;7(2):137-140. doi:<a href=\"https://doi.org/10.1002/pssc.200982423\">10.1002/pssc.200982423</a>","bibtex":"@article{Wippermann_Schmidt_Thissen_Grundmeier_2010, title={Dissociative and molecular adsorption of water onα-Al2O3(0001)}, volume={7}, DOI={<a href=\"https://doi.org/10.1002/pssc.200982423\">10.1002/pssc.200982423</a>}, number={2}, journal={physica status solidi (c)}, author={Wippermann, S. and Schmidt, Wolf Gero and Thissen, P. and Grundmeier, Guido}, year={2010}, pages={137–140} }","apa":"Wippermann, S., Schmidt, W. G., Thissen, P., &#38; Grundmeier, G. (2010). Dissociative and molecular adsorption of water onα-Al2O3(0001). <i>Physica Status Solidi (c)</i>, <i>7</i>(2), 137–140. <a href=\"https://doi.org/10.1002/pssc.200982423\">https://doi.org/10.1002/pssc.200982423</a>","ieee":"S. Wippermann, W. G. Schmidt, P. Thissen, and G. Grundmeier, “Dissociative and molecular adsorption of water onα-Al2O3(0001),” <i>physica status solidi (c)</i>, vol. 7, no. 2, pp. 137–140, 2010, doi: <a href=\"https://doi.org/10.1002/pssc.200982423\">10.1002/pssc.200982423</a>.","short":"S. Wippermann, W.G. Schmidt, P. Thissen, G. Grundmeier, Physica Status Solidi (c) 7 (2010) 137–140.","chicago":"Wippermann, S., Wolf Gero Schmidt, P. Thissen, and Guido Grundmeier. “Dissociative and Molecular Adsorption of Water Onα-Al2O3(0001).” <i>Physica Status Solidi (c)</i> 7, no. 2 (2010): 137–40. <a href=\"https://doi.org/10.1002/pssc.200982423\">https://doi.org/10.1002/pssc.200982423</a>."},"project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}]},{"date_created":"2019-10-15T07:43:20Z","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"type":"journal_article","publication":"Physical Review B","issue":"12","language":[{"iso":"eng"}],"doi":"10.1103/physrevb.81.125401","publication_identifier":{"issn":["1098-0121","1550-235X"]},"author":[{"full_name":"Rauls, E.","last_name":"Rauls","first_name":"E."},{"full_name":"Blankenburg, S.","last_name":"Blankenburg","first_name":"S."},{"id":"468","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero","last_name":"Schmidt","full_name":"Schmidt, Wolf Gero"}],"year":"2010","title":"Chemical reactivity on surfaces: Modeling the imide synthesis from DATP and PTCDA on Au(111)","intvolume":"        81","publication_status":"published","date_updated":"2025-12-16T07:46:10Z","citation":{"apa":"Rauls, E., Blankenburg, S., &#38; Schmidt, W. G. (2010). Chemical reactivity on surfaces: Modeling the imide synthesis from DATP and PTCDA on Au(111). <i>Physical Review B</i>, <i>81</i>(12). <a href=\"https://doi.org/10.1103/physrevb.81.125401\">https://doi.org/10.1103/physrevb.81.125401</a>","ieee":"E. Rauls, S. Blankenburg, and W. G. Schmidt, “Chemical reactivity on surfaces: Modeling the imide synthesis from DATP and PTCDA on Au(111),” <i>Physical Review B</i>, vol. 81, no. 12, 2010, doi: <a href=\"https://doi.org/10.1103/physrevb.81.125401\">10.1103/physrevb.81.125401</a>.","chicago":"Rauls, E., S. Blankenburg, and Wolf Gero Schmidt. “Chemical Reactivity on Surfaces: Modeling the Imide Synthesis from DATP and PTCDA on Au(111).” <i>Physical Review B</i> 81, no. 12 (2010). <a href=\"https://doi.org/10.1103/physrevb.81.125401\">https://doi.org/10.1103/physrevb.81.125401</a>.","short":"E. Rauls, S. Blankenburg, W.G. 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