[{"doi":"10.1002/andp.200910382","title":"Localization of excitons in weakly disordered semiconductor structures: A model study","date_created":"2021-08-24T08:58:35Z","author":[{"first_name":"N.","last_name":"Gögh","full_name":"Gögh, N."},{"first_name":"P.","full_name":"Thomas, P.","last_name":"Thomas"},{"first_name":"I.","full_name":"Kuznetsova, I.","last_name":"Kuznetsova"},{"first_name":"Torsten","last_name":"Meier","orcid":"0000-0001-8864-2072","full_name":"Meier, Torsten","id":"344"},{"last_name":"Varga","full_name":"Varga, I.","first_name":"I."}],"date_updated":"2023-04-19T11:12:57Z","page":"905-909","citation":{"ama":"Gögh N, Thomas P, Kuznetsova I, Meier T, Varga I. Localization of excitons in weakly disordered semiconductor structures: A model study. <i>Annalen der Physik</i>. 2010;(12):905-909. doi:<a href=\"https://doi.org/10.1002/andp.200910382\">10.1002/andp.200910382</a>","ieee":"N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, and I. Varga, “Localization of excitons in weakly disordered semiconductor structures: A model study,” <i>Annalen der Physik</i>, no. 12, pp. 905–909, 2010, doi: <a href=\"https://doi.org/10.1002/andp.200910382\">10.1002/andp.200910382</a>.","chicago":"Gögh, N., P. Thomas, I. Kuznetsova, Torsten Meier, and I. Varga. “Localization of Excitons in Weakly Disordered Semiconductor Structures: A Model Study.” <i>Annalen Der Physik</i>, no. 12 (2010): 905–9. <a href=\"https://doi.org/10.1002/andp.200910382\">https://doi.org/10.1002/andp.200910382</a>.","bibtex":"@article{Gögh_Thomas_Kuznetsova_Meier_Varga_2010, title={Localization of excitons in weakly disordered semiconductor structures: A model study}, DOI={<a href=\"https://doi.org/10.1002/andp.200910382\">10.1002/andp.200910382</a>}, number={12}, journal={Annalen der Physik}, author={Gögh, N. and Thomas, P. and Kuznetsova, I. and Meier, Torsten and Varga, I.}, year={2010}, pages={905–909} }","short":"N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, I. Varga, Annalen Der Physik (2010) 905–909.","mla":"Gögh, N., et al. “Localization of Excitons in Weakly Disordered Semiconductor Structures: A Model Study.” <i>Annalen Der Physik</i>, no. 12, 2010, pp. 905–09, doi:<a href=\"https://doi.org/10.1002/andp.200910382\">10.1002/andp.200910382</a>.","apa":"Gögh, N., Thomas, P., Kuznetsova, I., Meier, T., &#38; Varga, I. (2010). Localization of excitons in weakly disordered semiconductor structures: A model study. <i>Annalen Der Physik</i>, <i>12</i>, 905–909. <a href=\"https://doi.org/10.1002/andp.200910382\">https://doi.org/10.1002/andp.200910382</a>"},"year":"2010","issue":"12","publication_identifier":{"issn":["0003-3804","1521-3889"]},"publication_status":"published","language":[{"iso":"eng"}],"department":[{"_id":"15"},{"_id":"170"},{"_id":"293"},{"_id":"230"}],"user_id":"49063","_id":"23480","status":"public","abstract":[{"text":"We discuss transport and localization properties on the insulating side of the disorder dominated superconductor-insulator transition, described in terms of the dirty boson model. Analyzing the spectral properties of the interacting bosons in the absence of phonons, we argue that the Bose glass phase admits three distinct regimes. For strongest disorder the boson system is a fully localized, perfect insulator at any temperature. At smaller disorder, only the low temperature phase exhibits perfect insulation while delocalization takes place above a finite temperature. We argue that a third phase must intervene between these perfect insulators and the superconductor. This conducting Bose glass phase is characterized by a mobility edge in the many body spectrum, located at finite energy above the ground state. In this insulating regime purely electronically activated transport occurs, with a conductivity following an Arrhenius law at asymptotically low temperatures, while a tendency to superactivation is predicted at higher T. These predictions are in good agreement with recent transport experiments in highly disordered films of superconducting materials.","lang":"eng"}],"publication":"Annalen der Physik","type":"journal_article"},{"issue":"2","publication_identifier":{"issn":["1862-6351","1610-1642"]},"publication_status":"published","intvolume":"         7","page":"133-136","citation":{"chicago":"Wippermann, S., Wolf Gero Schmidt, F. Bechstedt, S. Chandola, K. Hinrichs, M. Gensch, N. Esser, K. Fleischer, and J. F. McGilp. “Optical Anisotropy of Si(111)-(4 × 1)/(8 × 2)-In Nanowires Calculated Fromfirst-Principles.” <i>Physica Status Solidi (c)</i> 7, no. 2 (2010): 133–36. <a href=\"https://doi.org/10.1002/pssc.200982413\">https://doi.org/10.1002/pssc.200982413</a>.","ieee":"S. Wippermann <i>et al.</i>, “Optical anisotropy of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles,” <i>physica status solidi (c)</i>, vol. 7, no. 2, pp. 133–136, 2010, doi: <a href=\"https://doi.org/10.1002/pssc.200982413\">10.1002/pssc.200982413</a>.","ama":"Wippermann S, Schmidt WG, Bechstedt F, et al. Optical anisotropy of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles. <i>physica status solidi (c)</i>. 2010;7(2):133-136. doi:<a href=\"https://doi.org/10.1002/pssc.200982413\">10.1002/pssc.200982413</a>","apa":"Wippermann, S., Schmidt, W. G., Bechstedt, F., Chandola, S., Hinrichs, K., Gensch, M., Esser, N., Fleischer, K., &#38; McGilp, J. F. (2010). Optical anisotropy of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles. <i>Physica Status Solidi (c)</i>, <i>7</i>(2), 133–136. <a href=\"https://doi.org/10.1002/pssc.200982413\">https://doi.org/10.1002/pssc.200982413</a>","short":"S. Wippermann, W.G. Schmidt, F. Bechstedt, S. Chandola, K. Hinrichs, M. Gensch, N. Esser, K. Fleischer, J.F. McGilp, Physica Status Solidi (c) 7 (2010) 133–136.","bibtex":"@article{Wippermann_Schmidt_Bechstedt_Chandola_Hinrichs_Gensch_Esser_Fleischer_McGilp_2010, title={Optical anisotropy of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles}, volume={7}, DOI={<a href=\"https://doi.org/10.1002/pssc.200982413\">10.1002/pssc.200982413</a>}, number={2}, journal={physica status solidi (c)}, author={Wippermann, S. and Schmidt, Wolf Gero and Bechstedt, F. and Chandola, S. and Hinrichs, K. and Gensch, M. and Esser, N. and Fleischer, K. and McGilp, J. F.}, year={2010}, pages={133–136} }","mla":"Wippermann, S., et al. “Optical Anisotropy of Si(111)-(4 × 1)/(8 × 2)-In Nanowires Calculated Fromfirst-Principles.” <i>Physica Status Solidi (c)</i>, vol. 7, no. 2, 2010, pp. 133–36, doi:<a href=\"https://doi.org/10.1002/pssc.200982413\">10.1002/pssc.200982413</a>."},"year":"2010","volume":7,"date_created":"2019-10-01T14:34:59Z","author":[{"full_name":"Wippermann, S.","last_name":"Wippermann","first_name":"S."},{"first_name":"Wolf Gero","orcid":"0000-0002-2717-5076","last_name":"Schmidt","id":"468","full_name":"Schmidt, Wolf Gero"},{"first_name":"F.","last_name":"Bechstedt","full_name":"Bechstedt, F."},{"last_name":"Chandola","full_name":"Chandola, S.","first_name":"S."},{"last_name":"Hinrichs","full_name":"Hinrichs, K.","first_name":"K."},{"last_name":"Gensch","full_name":"Gensch, M.","first_name":"M."},{"first_name":"N.","full_name":"Esser, N.","last_name":"Esser"},{"first_name":"K.","last_name":"Fleischer","full_name":"Fleischer, K."},{"last_name":"McGilp","full_name":"McGilp, J. F.","first_name":"J. F."}],"date_updated":"2025-12-05T12:45:21Z","doi":"10.1002/pssc.200982413","title":"Optical anisotropy of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles","publication":"physica status solidi (c)","type":"journal_article","status":"public","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"user_id":"16199","_id":"13581","project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"language":[{"iso":"eng"}]},{"status":"public","type":"journal_article","file_date_updated":"2020-08-30T15:07:56Z","isi":"1","article_type":"original","department":[{"_id":"295"},{"_id":"296"},{"_id":"15"},{"_id":"35"},{"_id":"230"},{"_id":"27"},{"_id":"170"}],"user_id":"16199","_id":"13573","project":[{"_id":"52","name":"Computing Resources Provided by the Paderborn Center for Parallel Computing"}],"page":"362-365","intvolume":"         7","citation":{"short":"C. Thierfelder, S. Sanna, A. Schindlmayr, W.G. Schmidt, Physica Status Solidi C 7 (2010) 362–365.","mla":"Thierfelder, Christian, et al. “Do We Know the Band Gap of Lithium Niobate?” <i>Physica Status Solidi C</i>, vol. 7, no. 2, Wiley-VCH, 2010, pp. 362–65, doi:<a href=\"https://doi.org/10.1002/pssc.200982473\">10.1002/pssc.200982473</a>.","bibtex":"@article{Thierfelder_Sanna_Schindlmayr_Schmidt_2010, title={Do we know the band gap of lithium niobate?}, volume={7}, DOI={<a href=\"https://doi.org/10.1002/pssc.200982473\">10.1002/pssc.200982473</a>}, number={2}, journal={Physica Status Solidi C}, publisher={Wiley-VCH}, author={Thierfelder, Christian and Sanna, Simone and Schindlmayr, Arno and Schmidt, Wolf Gero}, year={2010}, pages={362–365} }","apa":"Thierfelder, C., Sanna, S., Schindlmayr, A., &#38; Schmidt, W. G. (2010). Do we know the band gap of lithium niobate? <i>Physica Status Solidi C</i>, <i>7</i>(2), 362–365. <a href=\"https://doi.org/10.1002/pssc.200982473\">https://doi.org/10.1002/pssc.200982473</a>","ama":"Thierfelder C, Sanna S, Schindlmayr A, Schmidt WG. Do we know the band gap of lithium niobate? <i>Physica Status Solidi C</i>. 2010;7(2):362-365. doi:<a href=\"https://doi.org/10.1002/pssc.200982473\">10.1002/pssc.200982473</a>","ieee":"C. Thierfelder, S. Sanna, A. Schindlmayr, and W. G. Schmidt, “Do we know the band gap of lithium niobate?,” <i>Physica Status Solidi C</i>, vol. 7, no. 2, pp. 362–365, 2010, doi: <a href=\"https://doi.org/10.1002/pssc.200982473\">10.1002/pssc.200982473</a>.","chicago":"Thierfelder, Christian, Simone Sanna, Arno Schindlmayr, and Wolf Gero Schmidt. “Do We Know the Band Gap of Lithium Niobate?” <i>Physica Status Solidi C</i> 7, no. 2 (2010): 362–65. <a href=\"https://doi.org/10.1002/pssc.200982473\">https://doi.org/10.1002/pssc.200982473</a>."},"publication_identifier":{"issn":["1862-6351"],"eissn":["1610-1642"]},"has_accepted_license":"1","publication_status":"published","conference":{"start_date":"2009-07-05","name":"12th International Conference on the Formation of Semiconductor Interfaces","location":"Weimar","end_date":"2009-07-10"},"doi":"10.1002/pssc.200982473","volume":7,"author":[{"first_name":"Christian","last_name":"Thierfelder","full_name":"Thierfelder, Christian"},{"last_name":"Sanna","full_name":"Sanna, Simone","first_name":"Simone"},{"first_name":"Arno","orcid":"0000-0002-4855-071X","last_name":"Schindlmayr","full_name":"Schindlmayr, Arno","id":"458"},{"id":"468","full_name":"Schmidt, Wolf Gero","last_name":"Schmidt","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero"}],"date_updated":"2025-12-05T13:01:45Z","file":[{"creator":"schindlm","file_size":212674,"file_name":"pssc.200982473.pdf","content_type":"application/pdf","date_updated":"2020-08-30T15:07:56Z","date_created":"2020-08-28T14:39:40Z","title":"Do we know the band gap of lithium niobate?","description":"© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim","file_id":"18583","access_level":"closed","relation":"main_file"}],"abstract":[{"text":"Given the vast range of lithium niobate (LiNbO3) applications, the knowledge about its electronic and optical properties is surprisingly limited. The direct band gap of 3.7 eV for the ferroelectric phase – frequently cited in the literature – is concluded from optical experiments. Recent theoretical investigations show that the electronic band‐structure and optical properties are very sensitive to quasiparticle and electron‐hole attraction effects, which were included using the GW approximation for the electron self‐energy and the Bethe‐Salpeter equation respectively, both based on a model screening function. The calculated fundamental gap was found to be at least 1 eV larger than the experimental value. To resolve this discrepancy we performed first‐principles GW calculations for lithium niobate using the full‐potential linearized augmented plane‐wave (FLAPW) method. Thereby we use the parameter‐free random phase approximation for a realistic description of the nonlocal and energydependent screening. This leads to a band gap of about 4.7 (4.2) eV for ferro(para)‐electric lithium niobate.","lang":"eng"}],"publication":"Physica Status Solidi C","language":[{"iso":"eng"}],"ddc":["530"],"external_id":{"isi":["000284313000057"]},"year":"2010","issue":"2","quality_controlled":"1","title":"Do we know the band gap of lithium niobate?","date_created":"2019-10-01T09:18:29Z","publisher":"Wiley-VCH"},{"date_updated":"2025-12-05T12:45:54Z","date_created":"2019-10-01T09:20:03Z","author":[{"first_name":"Uwe","last_name":"Gerstmann","orcid":"0000-0002-4476-223X","id":"171","full_name":"Gerstmann, Uwe"},{"first_name":"M.","last_name":"Rohrmüller","full_name":"Rohrmüller, M."},{"full_name":"Mauri, F.","last_name":"Mauri","first_name":"F."},{"id":"468","full_name":"Schmidt, Wolf Gero","last_name":"Schmidt","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero"}],"volume":7,"title":"Ab initiog-tensor calculation for paramagnetic surface states: hydrogen adsorption at Si surfaces","doi":"10.1002/pssc.200982462","publication_status":"published","publication_identifier":{"issn":["1862-6351","1610-1642"]},"issue":"2","year":"2010","citation":{"chicago":"Gerstmann, Uwe, M. Rohrmüller, F. Mauri, and Wolf Gero Schmidt. “Ab Initiog-Tensor Calculation for Paramagnetic Surface States: Hydrogen Adsorption at Si Surfaces.” <i>Physica Status Solidi (c)</i> 7, no. 2 (2010): 157–60. <a href=\"https://doi.org/10.1002/pssc.200982462\">https://doi.org/10.1002/pssc.200982462</a>.","ieee":"U. Gerstmann, M. Rohrmüller, F. Mauri, and W. G. Schmidt, “Ab initiog-tensor calculation for paramagnetic surface states: hydrogen adsorption at Si surfaces,” <i>physica status solidi (c)</i>, vol. 7, no. 2, pp. 157–160, 2010, doi: <a href=\"https://doi.org/10.1002/pssc.200982462\">10.1002/pssc.200982462</a>.","ama":"Gerstmann U, Rohrmüller M, Mauri F, Schmidt WG. Ab initiog-tensor calculation for paramagnetic surface states: hydrogen adsorption at Si surfaces. <i>physica status solidi (c)</i>. 2010;7(2):157-160. doi:<a href=\"https://doi.org/10.1002/pssc.200982462\">10.1002/pssc.200982462</a>","apa":"Gerstmann, U., Rohrmüller, M., Mauri, F., &#38; Schmidt, W. G. (2010). Ab initiog-tensor calculation for paramagnetic surface states: hydrogen adsorption at Si surfaces. <i>Physica Status Solidi (c)</i>, <i>7</i>(2), 157–160. <a href=\"https://doi.org/10.1002/pssc.200982462\">https://doi.org/10.1002/pssc.200982462</a>","short":"U. Gerstmann, M. Rohrmüller, F. Mauri, W.G. Schmidt, Physica Status Solidi (c) 7 (2010) 157–160.","bibtex":"@article{Gerstmann_Rohrmüller_Mauri_Schmidt_2010, title={Ab initiog-tensor calculation for paramagnetic surface states: hydrogen adsorption at Si surfaces}, volume={7}, DOI={<a href=\"https://doi.org/10.1002/pssc.200982462\">10.1002/pssc.200982462</a>}, number={2}, journal={physica status solidi (c)}, author={Gerstmann, Uwe and Rohrmüller, M. and Mauri, F. and Schmidt, Wolf Gero}, year={2010}, pages={157–160} }","mla":"Gerstmann, Uwe, et al. “Ab Initiog-Tensor Calculation for Paramagnetic Surface States: Hydrogen Adsorption at Si Surfaces.” <i>Physica Status Solidi (c)</i>, vol. 7, no. 2, 2010, pp. 157–60, doi:<a href=\"https://doi.org/10.1002/pssc.200982462\">10.1002/pssc.200982462</a>."},"page":"157-160","intvolume":"         7","project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"_id":"13574","user_id":"16199","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"790"},{"_id":"230"},{"_id":"27"}],"language":[{"iso":"eng"}],"type":"journal_article","publication":"physica status solidi (c)","status":"public"},{"issue":"20","publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","intvolume":"        80","citation":{"short":"C. Bihler, U. Gerstmann, M. Hoeb, T. Graf, M. Gjukic, W.G. Schmidt, M. Stutzmann, M.S. Brandt, Physical Review B 80 (2010).","bibtex":"@article{Bihler_Gerstmann_Hoeb_Graf_Gjukic_Schmidt_Stutzmann_Brandt_2010, title={Manganese-hydrogen complexes inGa1−xMnxN}, volume={80}, DOI={<a href=\"https://doi.org/10.1103/physrevb.80.205205\">10.1103/physrevb.80.205205</a>}, number={20}, journal={Physical Review B}, author={Bihler, C. and Gerstmann, Uwe and Hoeb, M. and Graf, T. and Gjukic, M. and Schmidt, Wolf Gero and Stutzmann, M. and Brandt, M. S.}, year={2010} }","mla":"Bihler, C., et al. “Manganese-Hydrogen Complexes InGa1−xMnxN.” <i>Physical Review B</i>, vol. 80, no. 20, 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.80.205205\">10.1103/physrevb.80.205205</a>.","apa":"Bihler, C., Gerstmann, U., Hoeb, M., Graf, T., Gjukic, M., Schmidt, W. G., Stutzmann, M., &#38; Brandt, M. S. (2010). Manganese-hydrogen complexes inGa1−xMnxN. <i>Physical Review B</i>, <i>80</i>(20). <a href=\"https://doi.org/10.1103/physrevb.80.205205\">https://doi.org/10.1103/physrevb.80.205205</a>","ieee":"C. Bihler <i>et al.</i>, “Manganese-hydrogen complexes inGa1−xMnxN,” <i>Physical Review B</i>, vol. 80, no. 20, 2010, doi: <a href=\"https://doi.org/10.1103/physrevb.80.205205\">10.1103/physrevb.80.205205</a>.","chicago":"Bihler, C., Uwe Gerstmann, M. Hoeb, T. Graf, M. Gjukic, Wolf Gero Schmidt, M. Stutzmann, and M. S. Brandt. “Manganese-Hydrogen Complexes InGa1−xMnxN.” <i>Physical Review B</i> 80, no. 20 (2010). <a href=\"https://doi.org/10.1103/physrevb.80.205205\">https://doi.org/10.1103/physrevb.80.205205</a>.","ama":"Bihler C, Gerstmann U, Hoeb M, et al. Manganese-hydrogen complexes inGa1−xMnxN. <i>Physical Review B</i>. 2010;80(20). doi:<a href=\"https://doi.org/10.1103/physrevb.80.205205\">10.1103/physrevb.80.205205</a>"},"year":"2010","volume":80,"date_created":"2019-10-09T09:00:28Z","author":[{"first_name":"C.","full_name":"Bihler, C.","last_name":"Bihler"},{"first_name":"Uwe","id":"171","full_name":"Gerstmann, Uwe","last_name":"Gerstmann","orcid":"0000-0002-4476-223X"},{"last_name":"Hoeb","full_name":"Hoeb, M.","first_name":"M."},{"first_name":"T.","full_name":"Graf, T.","last_name":"Graf"},{"full_name":"Gjukic, M.","last_name":"Gjukic","first_name":"M."},{"id":"468","full_name":"Schmidt, Wolf Gero","last_name":"Schmidt","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero"},{"first_name":"M.","full_name":"Stutzmann, M.","last_name":"Stutzmann"},{"full_name":"Brandt, M. S.","last_name":"Brandt","first_name":"M. S."}],"date_updated":"2025-12-05T13:14:00Z","doi":"10.1103/physrevb.80.205205","title":"Manganese-hydrogen complexes inGa1−xMnxN","publication":"Physical Review B","type":"journal_article","status":"public","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"790"},{"_id":"35"},{"_id":"230"}],"user_id":"16199","_id":"13656","language":[{"iso":"eng"}]},{"publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","issue":"24","year":"2010","intvolume":"        81","citation":{"apa":"Schumacher, S., Galbraith, I., Ruseckas, A., Turnbull, G. A., &#38; Samuel, I. D. W. (2010). Dynamics of photoexcitation and stimulated optical emission in conjugated polymers: A multiscale quantum-chemistry and Maxwell-Bloch-equations approach. <i>Physical Review B</i>, <i>81</i>(24), Article 245407. <a href=\"https://doi.org/10.1103/physrevb.81.245407\">https://doi.org/10.1103/physrevb.81.245407</a>","bibtex":"@article{Schumacher_Galbraith_Ruseckas_Turnbull_Samuel_2010, title={Dynamics of photoexcitation and stimulated optical emission in conjugated polymers: A multiscale quantum-chemistry and Maxwell-Bloch-equations approach}, volume={81}, DOI={<a href=\"https://doi.org/10.1103/physrevb.81.245407\">10.1103/physrevb.81.245407</a>}, number={24245407}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Schumacher, Stefan and Galbraith, Ian and Ruseckas, Arvydas and Turnbull, Graham A. and Samuel, Ifor D. W.}, year={2010} }","mla":"Schumacher, Stefan, et al. “Dynamics of Photoexcitation and Stimulated Optical Emission in Conjugated Polymers: A Multiscale Quantum-Chemistry and Maxwell-Bloch-Equations Approach.” <i>Physical Review B</i>, vol. 81, no. 24, 245407, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.81.245407\">10.1103/physrevb.81.245407</a>.","short":"S. Schumacher, I. Galbraith, A. Ruseckas, G.A. Turnbull, I.D.W. Samuel, Physical Review B 81 (2010).","chicago":"Schumacher, Stefan, Ian Galbraith, Arvydas Ruseckas, Graham A. Turnbull, and Ifor D. W. Samuel. “Dynamics of Photoexcitation and Stimulated Optical Emission in Conjugated Polymers: A Multiscale Quantum-Chemistry and Maxwell-Bloch-Equations Approach.” <i>Physical Review B</i> 81, no. 24 (2010). <a href=\"https://doi.org/10.1103/physrevb.81.245407\">https://doi.org/10.1103/physrevb.81.245407</a>.","ieee":"S. Schumacher, I. Galbraith, A. Ruseckas, G. A. Turnbull, and I. D. W. Samuel, “Dynamics of photoexcitation and stimulated optical emission in conjugated polymers: A multiscale quantum-chemistry and Maxwell-Bloch-equations approach,” <i>Physical Review B</i>, vol. 81, no. 24, Art. no. 245407, 2010, doi: <a href=\"https://doi.org/10.1103/physrevb.81.245407\">10.1103/physrevb.81.245407</a>.","ama":"Schumacher S, Galbraith I, Ruseckas A, Turnbull GA, Samuel IDW. Dynamics of photoexcitation and stimulated optical emission in conjugated polymers: A multiscale quantum-chemistry and Maxwell-Bloch-equations approach. <i>Physical Review B</i>. 2010;81(24). doi:<a href=\"https://doi.org/10.1103/physrevb.81.245407\">10.1103/physrevb.81.245407</a>"},"date_updated":"2025-12-05T15:09:27Z","publisher":"American Physical Society (APS)","volume":81,"author":[{"full_name":"Schumacher, Stefan","id":"27271","last_name":"Schumacher","orcid":"0000-0003-4042-4951","first_name":"Stefan"},{"full_name":"Galbraith, Ian","last_name":"Galbraith","first_name":"Ian"},{"first_name":"Arvydas","full_name":"Ruseckas, Arvydas","last_name":"Ruseckas"},{"first_name":"Graham A.","full_name":"Turnbull, Graham A.","last_name":"Turnbull"},{"last_name":"Samuel","full_name":"Samuel, Ifor D. W.","first_name":"Ifor D. W."}],"date_created":"2025-12-05T15:08:55Z","title":"Dynamics of photoexcitation and stimulated optical emission in conjugated polymers: A multiscale quantum-chemistry and Maxwell-Bloch-equations approach","doi":"10.1103/physrevb.81.245407","publication":"Physical Review B","type":"journal_article","status":"public","_id":"62930","department":[{"_id":"15"},{"_id":"170"},{"_id":"297"},{"_id":"35"},{"_id":"230"}],"user_id":"16199","article_number":"245407","language":[{"iso":"eng"}]},{"issue":"2","publication_status":"published","publication_identifier":{"issn":["1862-6351","1610-1642"]},"citation":{"ama":"Blankenburg S, Schmidt WG. Temperature dependent stability of self-assembled molecular rows. <i>physica status solidi (c)</i>. 2010;7(2):415-417. doi:<a href=\"https://doi.org/10.1002/pssc.200982460\">10.1002/pssc.200982460</a>","ieee":"S. Blankenburg and W. G. Schmidt, “Temperature dependent stability of self-assembled molecular rows,” <i>physica status solidi (c)</i>, vol. 7, no. 2, pp. 415–417, 2010, doi: <a href=\"https://doi.org/10.1002/pssc.200982460\">10.1002/pssc.200982460</a>.","chicago":"Blankenburg, S., and Wolf Gero Schmidt. “Temperature Dependent Stability of Self-Assembled Molecular Rows.” <i>Physica Status Solidi (c)</i> 7, no. 2 (2010): 415–17. <a href=\"https://doi.org/10.1002/pssc.200982460\">https://doi.org/10.1002/pssc.200982460</a>.","bibtex":"@article{Blankenburg_Schmidt_2010, title={Temperature dependent stability of self-assembled molecular rows}, volume={7}, DOI={<a href=\"https://doi.org/10.1002/pssc.200982460\">10.1002/pssc.200982460</a>}, number={2}, journal={physica status solidi (c)}, author={Blankenburg, S. and Schmidt, Wolf Gero}, year={2010}, pages={415–417} }","mla":"Blankenburg, S., and Wolf Gero Schmidt. “Temperature Dependent Stability of Self-Assembled Molecular Rows.” <i>Physica Status Solidi (c)</i>, vol. 7, no. 2, 2010, pp. 415–17, doi:<a href=\"https://doi.org/10.1002/pssc.200982460\">10.1002/pssc.200982460</a>.","short":"S. Blankenburg, W.G. Schmidt, Physica Status Solidi (c) 7 (2010) 415–417.","apa":"Blankenburg, S., &#38; Schmidt, W. G. (2010). Temperature dependent stability of self-assembled molecular rows. <i>Physica Status Solidi (c)</i>, <i>7</i>(2), 415–417. <a href=\"https://doi.org/10.1002/pssc.200982460\">https://doi.org/10.1002/pssc.200982460</a>"},"page":"415-417","intvolume":"         7","year":"2010","author":[{"last_name":"Blankenburg","full_name":"Blankenburg, S.","first_name":"S."},{"first_name":"Wolf Gero","full_name":"Schmidt, Wolf Gero","id":"468","orcid":"0000-0002-2717-5076","last_name":"Schmidt"}],"date_created":"2019-10-15T07:47:46Z","volume":7,"date_updated":"2025-12-16T07:36:06Z","doi":"10.1002/pssc.200982460","title":"Temperature dependent stability of self-assembled molecular rows","type":"journal_article","publication":"physica status solidi (c)","status":"public","user_id":"16199","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"_id":"13839","language":[{"iso":"eng"}],"funded_apc":"1"},{"status":"public","publication":"physica status solidi (c)","type":"journal_article","funded_apc":"1","language":[{"iso":"eng"}],"_id":"13838","project":[{"_id":"52","name":"Computing Resources Provided by the Paderborn Center for Parallel Computing"}],"department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"user_id":"16199","year":"2010","intvolume":"         7","page":"2272-2274","citation":{"ama":"Sanna S, Schmidt WG. GaN growth on LiNbO3 (0001) - a first-principles simulation. <i>physica status solidi (c)</i>. 2010;7(7-8):2272-2274. doi:<a href=\"https://doi.org/10.1002/pssc.200983649\">10.1002/pssc.200983649</a>","ieee":"S. Sanna and W. G. Schmidt, “GaN growth on LiNbO3 (0001) - a first-principles simulation,” <i>physica status solidi (c)</i>, vol. 7, no. 7–8, pp. 2272–2274, 2010, doi: <a href=\"https://doi.org/10.1002/pssc.200983649\">10.1002/pssc.200983649</a>.","chicago":"Sanna, Simone, and Wolf Gero Schmidt. “GaN Growth on LiNbO3 (0001) - a First-Principles Simulation.” <i>Physica Status Solidi (c)</i> 7, no. 7–8 (2010): 2272–74. <a href=\"https://doi.org/10.1002/pssc.200983649\">https://doi.org/10.1002/pssc.200983649</a>.","bibtex":"@article{Sanna_Schmidt_2010, title={GaN growth on LiNbO3 (0001) - a first-principles simulation}, volume={7}, DOI={<a href=\"https://doi.org/10.1002/pssc.200983649\">10.1002/pssc.200983649</a>}, number={7–8}, journal={physica status solidi (c)}, author={Sanna, Simone and Schmidt, Wolf Gero}, year={2010}, pages={2272–2274} }","mla":"Sanna, Simone, and Wolf Gero Schmidt. “GaN Growth on LiNbO3 (0001) - a First-Principles Simulation.” <i>Physica Status Solidi (c)</i>, vol. 7, no. 7–8, 2010, pp. 2272–74, doi:<a href=\"https://doi.org/10.1002/pssc.200983649\">10.1002/pssc.200983649</a>.","short":"S. Sanna, W.G. Schmidt, Physica Status Solidi (c) 7 (2010) 2272–2274.","apa":"Sanna, S., &#38; Schmidt, W. G. (2010). GaN growth on LiNbO3 (0001) - a first-principles simulation. <i>Physica Status Solidi (c)</i>, <i>7</i>(7–8), 2272–2274. <a href=\"https://doi.org/10.1002/pssc.200983649\">https://doi.org/10.1002/pssc.200983649</a>"},"publication_identifier":{"issn":["1862-6351","1610-1642"]},"publication_status":"published","issue":"7-8","title":"GaN growth on LiNbO3 (0001) - a first-principles simulation","doi":"10.1002/pssc.200983649","date_updated":"2025-12-16T07:36:34Z","volume":7,"author":[{"last_name":"Sanna","full_name":"Sanna, Simone","first_name":"Simone"},{"first_name":"Wolf Gero","last_name":"Schmidt","orcid":"0000-0002-2717-5076","id":"468","full_name":"Schmidt, Wolf Gero"}],"date_created":"2019-10-15T07:46:44Z"},{"year":"2010","page":"403-406","citation":{"apa":"Scholle, A., Greulich-Weber, S., Rauls, E., Schmidt, W. G., &#38; Gerstmann, U. (2010). Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC. <i>Materials Science Forum</i>, <i>645–648</i>, 403–406. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.645-648.403\">https://doi.org/10.4028/www.scientific.net/msf.645-648.403</a>","short":"A. Scholle, S. Greulich-Weber, E. Rauls, W.G. Schmidt, U. Gerstmann, Materials Science Forum 645–648 (2010) 403–406.","bibtex":"@article{Scholle_Greulich-Weber_Rauls_Schmidt_Gerstmann_2010, title={Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC}, volume={645–648}, DOI={<a href=\"https://doi.org/10.4028/www.scientific.net/msf.645-648.403\">10.4028/www.scientific.net/msf.645-648.403</a>}, journal={Materials Science Forum}, author={Scholle, Andreas and Greulich-Weber, Siegmund and Rauls, Eva and Schmidt, Wolf Gero and Gerstmann, Uwe}, year={2010}, pages={403–406} }","mla":"Scholle, Andreas, et al. “Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC.” <i>Materials Science Forum</i>, vol. 645–648, 2010, pp. 403–06, doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.645-648.403\">10.4028/www.scientific.net/msf.645-648.403</a>.","ama":"Scholle A, Greulich-Weber S, Rauls E, Schmidt WG, Gerstmann U. Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC. <i>Materials Science Forum</i>. 2010;645-648:403-406. doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.645-648.403\">10.4028/www.scientific.net/msf.645-648.403</a>","chicago":"Scholle, Andreas, Siegmund Greulich-Weber, Eva Rauls, Wolf Gero Schmidt, and Uwe Gerstmann. “Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC.” <i>Materials Science Forum</i> 645–648 (2010): 403–6. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.645-648.403\">https://doi.org/10.4028/www.scientific.net/msf.645-648.403</a>.","ieee":"A. Scholle, S. Greulich-Weber, E. Rauls, W. G. Schmidt, and U. Gerstmann, “Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC,” <i>Materials Science Forum</i>, vol. 645–648, pp. 403–406, 2010, doi: <a href=\"https://doi.org/10.4028/www.scientific.net/msf.645-648.403\">10.4028/www.scientific.net/msf.645-648.403</a>."},"publication_identifier":{"issn":["1662-9752"]},"publication_status":"published","title":"Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC","doi":"10.4028/www.scientific.net/msf.645-648.403","date_updated":"2025-12-16T07:45:12Z","volume":"645-648","date_created":"2019-10-15T07:44:38Z","author":[{"full_name":"Scholle, Andreas","last_name":"Scholle","first_name":"Andreas"},{"last_name":"Greulich-Weber","full_name":"Greulich-Weber, Siegmund","first_name":"Siegmund"},{"last_name":"Rauls","full_name":"Rauls, Eva","first_name":"Eva"},{"first_name":"Wolf Gero","full_name":"Schmidt, Wolf Gero","id":"468","orcid":"0000-0002-2717-5076","last_name":"Schmidt"},{"first_name":"Uwe","orcid":"0000-0002-4476-223X","last_name":"Gerstmann","id":"171","full_name":"Gerstmann, Uwe"}],"abstract":[{"lang":"eng","text":"<jats:p>In non-annealed 6H-SiC samples that were electron irradiated at room temperature, a new EPR signal due to a S=1 defect center with exceptionally large zero-field splitting (D = +652•10-4 cm-1) has been observed under illumination. A positive sign of D demonstrates that the spin-orbit contribution to the zero-field splitting exceeds by far that of the spin-spin interaction. A principal axis of the fine structure tilted by 59° against the crystal c-axis as well as the exceptionally high zero-field splitting D can be qualitatively understood by the occurrence of additional close-lying defect levels in defect clusters resulting in comparatively large second-order spin-orbit coup¬ling. A tentative assignment to vacancy clusters is supported by the observed annealing behavior.  </jats:p>"}],"status":"public","publication":"Materials Science Forum","type":"journal_article","language":[{"iso":"eng"}],"_id":"13837","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"790"},{"_id":"35"},{"_id":"230"}],"user_id":"16199"},{"project":[{"_id":"52","name":"Computing Resources Provided by the Paderborn Center for Parallel Computing"}],"_id":"13843","user_id":"16199","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"2"},{"_id":"302"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"language":[{"iso":"eng"}],"funded_apc":"1","type":"journal_article","publication":"physica status solidi (c)","status":"public","date_updated":"2025-12-16T07:43:16Z","date_created":"2019-10-15T07:55:59Z","author":[{"last_name":"Wippermann","full_name":"Wippermann, S.","first_name":"S."},{"first_name":"Wolf Gero","id":"468","full_name":"Schmidt, Wolf Gero","last_name":"Schmidt","orcid":"0000-0002-2717-5076"},{"full_name":"Thissen, P.","last_name":"Thissen","first_name":"P."},{"first_name":"Guido","full_name":"Grundmeier, Guido","id":"194","last_name":"Grundmeier"}],"volume":7,"title":"Dissociative and molecular adsorption of water onα-Al2O3(0001)","doi":"10.1002/pssc.200982423","publication_status":"published","publication_identifier":{"issn":["1862-6351","1610-1642"]},"issue":"2","year":"2010","citation":{"mla":"Wippermann, S., et al. “Dissociative and Molecular Adsorption of Water Onα-Al2O3(0001).” <i>Physica Status Solidi (c)</i>, vol. 7, no. 2, 2010, pp. 137–40, doi:<a href=\"https://doi.org/10.1002/pssc.200982423\">10.1002/pssc.200982423</a>.","short":"S. Wippermann, W.G. Schmidt, P. Thissen, G. Grundmeier, Physica Status Solidi (c) 7 (2010) 137–140.","bibtex":"@article{Wippermann_Schmidt_Thissen_Grundmeier_2010, title={Dissociative and molecular adsorption of water onα-Al2O3(0001)}, volume={7}, DOI={<a href=\"https://doi.org/10.1002/pssc.200982423\">10.1002/pssc.200982423</a>}, number={2}, journal={physica status solidi (c)}, author={Wippermann, S. and Schmidt, Wolf Gero and Thissen, P. and Grundmeier, Guido}, year={2010}, pages={137–140} }","apa":"Wippermann, S., Schmidt, W. G., Thissen, P., &#38; Grundmeier, G. (2010). Dissociative and molecular adsorption of water onα-Al2O3(0001). <i>Physica Status Solidi (c)</i>, <i>7</i>(2), 137–140. <a href=\"https://doi.org/10.1002/pssc.200982423\">https://doi.org/10.1002/pssc.200982423</a>","ieee":"S. Wippermann, W. G. Schmidt, P. Thissen, and G. Grundmeier, “Dissociative and molecular adsorption of water onα-Al2O3(0001),” <i>physica status solidi (c)</i>, vol. 7, no. 2, pp. 137–140, 2010, doi: <a href=\"https://doi.org/10.1002/pssc.200982423\">10.1002/pssc.200982423</a>.","chicago":"Wippermann, S., Wolf Gero Schmidt, P. Thissen, and Guido Grundmeier. “Dissociative and Molecular Adsorption of Water Onα-Al2O3(0001).” <i>Physica Status Solidi (c)</i> 7, no. 2 (2010): 137–40. <a href=\"https://doi.org/10.1002/pssc.200982423\">https://doi.org/10.1002/pssc.200982423</a>.","ama":"Wippermann S, Schmidt WG, Thissen P, Grundmeier G. Dissociative and molecular adsorption of water onα-Al2O3(0001). <i>physica status solidi (c)</i>. 2010;7(2):137-140. doi:<a href=\"https://doi.org/10.1002/pssc.200982423\">10.1002/pssc.200982423</a>"},"page":"137-140","intvolume":"         7"},{"publication":"Physical Review B","type":"journal_article","status":"public","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"user_id":"16199","_id":"13836","project":[{"_id":"52","name":"Computing Resources Provided by the Paderborn Center for Parallel Computing"}],"funded_apc":"1","language":[{"iso":"eng"}],"issue":"12","publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","intvolume":"        81","citation":{"bibtex":"@article{Rauls_Blankenburg_Schmidt_2010, title={Chemical reactivity on surfaces: Modeling the imide synthesis from DATP and PTCDA on Au(111)}, volume={81}, DOI={<a href=\"https://doi.org/10.1103/physrevb.81.125401\">10.1103/physrevb.81.125401</a>}, number={12}, journal={Physical Review B}, author={Rauls, E. and Blankenburg, S. and Schmidt, Wolf Gero}, year={2010} }","mla":"Rauls, E., et al. “Chemical Reactivity on Surfaces: Modeling the Imide Synthesis from DATP and PTCDA on Au(111).” <i>Physical Review B</i>, vol. 81, no. 12, 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.81.125401\">10.1103/physrevb.81.125401</a>.","short":"E. Rauls, S. Blankenburg, W.G. Schmidt, Physical Review B 81 (2010).","apa":"Rauls, E., Blankenburg, S., &#38; Schmidt, W. G. (2010). Chemical reactivity on surfaces: Modeling the imide synthesis from DATP and PTCDA on Au(111). <i>Physical Review B</i>, <i>81</i>(12). <a href=\"https://doi.org/10.1103/physrevb.81.125401\">https://doi.org/10.1103/physrevb.81.125401</a>","ama":"Rauls E, Blankenburg S, Schmidt WG. Chemical reactivity on surfaces: Modeling the imide synthesis from DATP and PTCDA on Au(111). <i>Physical Review B</i>. 2010;81(12). doi:<a href=\"https://doi.org/10.1103/physrevb.81.125401\">10.1103/physrevb.81.125401</a>","ieee":"E. Rauls, S. Blankenburg, and W. G. Schmidt, “Chemical reactivity on surfaces: Modeling the imide synthesis from DATP and PTCDA on Au(111),” <i>Physical Review B</i>, vol. 81, no. 12, 2010, doi: <a href=\"https://doi.org/10.1103/physrevb.81.125401\">10.1103/physrevb.81.125401</a>.","chicago":"Rauls, E., S. Blankenburg, and Wolf Gero Schmidt. “Chemical Reactivity on Surfaces: Modeling the Imide Synthesis from DATP and PTCDA on Au(111).” <i>Physical Review B</i> 81, no. 12 (2010). <a href=\"https://doi.org/10.1103/physrevb.81.125401\">https://doi.org/10.1103/physrevb.81.125401</a>."},"year":"2010","volume":81,"author":[{"full_name":"Rauls, E.","last_name":"Rauls","first_name":"E."},{"full_name":"Blankenburg, S.","last_name":"Blankenburg","first_name":"S."},{"last_name":"Schmidt","orcid":"0000-0002-2717-5076","id":"468","full_name":"Schmidt, Wolf Gero","first_name":"Wolf Gero"}],"date_created":"2019-10-15T07:43:20Z","date_updated":"2025-12-16T07:46:10Z","doi":"10.1103/physrevb.81.125401","title":"Chemical reactivity on surfaces: Modeling the imide synthesis from DATP and PTCDA on Au(111)"},{"funded_apc":"1","language":[{"iso":"eng"}],"project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"_id":"13842","user_id":"16199","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"status":"public","type":"journal_article","publication":"physica status solidi (c)","title":"Ab initio investigation of the LiNbO3(0001) surface","doi":"10.1002/pssc.200982456","date_updated":"2025-12-16T07:43:40Z","date_created":"2019-10-15T07:51:08Z","author":[{"full_name":"Sanna, Simone","last_name":"Sanna","first_name":"Simone"},{"first_name":"Alexander V.","last_name":"Gavrilenko","full_name":"Gavrilenko, Alexander V."},{"last_name":"Schmidt","orcid":"0000-0002-2717-5076","id":"468","full_name":"Schmidt, Wolf Gero","first_name":"Wolf Gero"}],"volume":7,"year":"2010","citation":{"ama":"Sanna S, Gavrilenko AV, Schmidt WG. Ab initio investigation of the LiNbO3(0001) surface. <i>physica status solidi (c)</i>. 2010;7(2):145-148. doi:<a href=\"https://doi.org/10.1002/pssc.200982456\">10.1002/pssc.200982456</a>","chicago":"Sanna, Simone, Alexander V. Gavrilenko, and Wolf Gero Schmidt. “Ab Initio Investigation of the LiNbO3(0001) Surface.” <i>Physica Status Solidi (c)</i> 7, no. 2 (2010): 145–48. <a href=\"https://doi.org/10.1002/pssc.200982456\">https://doi.org/10.1002/pssc.200982456</a>.","ieee":"S. Sanna, A. V. Gavrilenko, and W. G. Schmidt, “Ab initio investigation of the LiNbO3(0001) surface,” <i>physica status solidi (c)</i>, vol. 7, no. 2, pp. 145–148, 2010, doi: <a href=\"https://doi.org/10.1002/pssc.200982456\">10.1002/pssc.200982456</a>.","apa":"Sanna, S., Gavrilenko, A. V., &#38; Schmidt, W. G. (2010). Ab initio investigation of the LiNbO3(0001) surface. <i>Physica Status Solidi (c)</i>, <i>7</i>(2), 145–148. <a href=\"https://doi.org/10.1002/pssc.200982456\">https://doi.org/10.1002/pssc.200982456</a>","mla":"Sanna, Simone, et al. “Ab Initio Investigation of the LiNbO3(0001) Surface.” <i>Physica Status Solidi (c)</i>, vol. 7, no. 2, 2010, pp. 145–48, doi:<a href=\"https://doi.org/10.1002/pssc.200982456\">10.1002/pssc.200982456</a>.","short":"S. Sanna, A.V. Gavrilenko, W.G. Schmidt, Physica Status Solidi (c) 7 (2010) 145–148.","bibtex":"@article{Sanna_Gavrilenko_Schmidt_2010, title={Ab initio investigation of the LiNbO3(0001) surface}, volume={7}, DOI={<a href=\"https://doi.org/10.1002/pssc.200982456\">10.1002/pssc.200982456</a>}, number={2}, journal={physica status solidi (c)}, author={Sanna, Simone and Gavrilenko, Alexander V. and Schmidt, Wolf Gero}, year={2010}, pages={145–148} }"},"intvolume":"         7","page":"145-148","publication_status":"published","publication_identifier":{"issn":["1862-6351","1610-1642"]},"issue":"2"},{"type":"journal_article","publication":"physica status solidi (c)","status":"public","project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"_id":"13841","user_id":"16199","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"language":[{"iso":"eng"}],"funded_apc":"1","publication_status":"published","publication_identifier":{"issn":["1862-6351","1610-1642"]},"issue":"2","year":"2010","citation":{"apa":"Blankenburg, S., Rauls, E., &#38; Schmidt, W. G. (2010). The physics of highly ordered molecular rows. <i>Physica Status Solidi (c)</i>, <i>7</i>(2), 153–156. <a href=\"https://doi.org/10.1002/pssc.200982459\">https://doi.org/10.1002/pssc.200982459</a>","short":"S. Blankenburg, E. Rauls, W.G. Schmidt, Physica Status Solidi (c) 7 (2010) 153–156.","bibtex":"@article{Blankenburg_Rauls_Schmidt_2010, title={The physics of highly ordered molecular rows}, volume={7}, DOI={<a href=\"https://doi.org/10.1002/pssc.200982459\">10.1002/pssc.200982459</a>}, number={2}, journal={physica status solidi (c)}, author={Blankenburg, S. and Rauls, E. and Schmidt, Wolf Gero}, year={2010}, pages={153–156} }","mla":"Blankenburg, S., et al. “The Physics of Highly Ordered Molecular Rows.” <i>Physica Status Solidi (c)</i>, vol. 7, no. 2, 2010, pp. 153–56, doi:<a href=\"https://doi.org/10.1002/pssc.200982459\">10.1002/pssc.200982459</a>.","ieee":"S. Blankenburg, E. Rauls, and W. G. Schmidt, “The physics of highly ordered molecular rows,” <i>physica status solidi (c)</i>, vol. 7, no. 2, pp. 153–156, 2010, doi: <a href=\"https://doi.org/10.1002/pssc.200982459\">10.1002/pssc.200982459</a>.","chicago":"Blankenburg, S., E. Rauls, and Wolf Gero Schmidt. “The Physics of Highly Ordered Molecular Rows.” <i>Physica Status Solidi (c)</i> 7, no. 2 (2010): 153–56. <a href=\"https://doi.org/10.1002/pssc.200982459\">https://doi.org/10.1002/pssc.200982459</a>.","ama":"Blankenburg S, Rauls E, Schmidt WG. The physics of highly ordered molecular rows. <i>physica status solidi (c)</i>. 2010;7(2):153-156. doi:<a href=\"https://doi.org/10.1002/pssc.200982459\">10.1002/pssc.200982459</a>"},"intvolume":"         7","page":"153-156","date_updated":"2025-12-16T07:44:07Z","author":[{"first_name":"S.","full_name":"Blankenburg, S.","last_name":"Blankenburg"},{"first_name":"E.","last_name":"Rauls","full_name":"Rauls, E."},{"first_name":"Wolf Gero","last_name":"Schmidt","orcid":"0000-0002-2717-5076","full_name":"Schmidt, Wolf Gero","id":"468"}],"date_created":"2019-10-15T07:49:59Z","volume":7,"title":"The physics of highly ordered molecular rows","doi":"10.1002/pssc.200982459"},{"status":"public","publication":"physica status solidi (b)","type":"journal_article","language":[{"iso":"eng"}],"funded_apc":"1","_id":"13835","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"284"},{"_id":"790"},{"_id":"35"},{"_id":"230"}],"user_id":"16199","year":"2010","page":"1728-1731","intvolume":"       247","citation":{"apa":"Scholle, A., Greulich-Weber, S., As, D. J., Mietze, Ch., Son, N. T., Hemmingsson, C., Monemar, B., Janzén, E., Gerstmann, U., Sanna, S., Rauls, E., &#38; Schmidt, W. G. (2010). Magnetic characterization of conductance electrons in GaN. <i>Physica Status Solidi (b)</i>, <i>247</i>(7), 1728–1731. <a href=\"https://doi.org/10.1002/pssb.200983582\">https://doi.org/10.1002/pssb.200983582</a>","mla":"Scholle, A., et al. “Magnetic Characterization of Conductance Electrons in GaN.” <i>Physica Status Solidi (b)</i>, vol. 247, no. 7, 2010, pp. 1728–31, doi:<a href=\"https://doi.org/10.1002/pssb.200983582\">10.1002/pssb.200983582</a>.","short":"A. Scholle, S. Greulich-Weber, D.J. As, Ch. Mietze, N.T. Son, C. Hemmingsson, B. Monemar, E. Janzén, U. Gerstmann, S. Sanna, E. Rauls, W.G. Schmidt, Physica Status Solidi (b) 247 (2010) 1728–1731.","bibtex":"@article{Scholle_Greulich-Weber_As_Mietze_Son_Hemmingsson_Monemar_Janzén_Gerstmann_Sanna_et al._2010, title={Magnetic characterization of conductance electrons in GaN}, volume={247}, DOI={<a href=\"https://doi.org/10.1002/pssb.200983582\">10.1002/pssb.200983582</a>}, number={7}, journal={physica status solidi (b)}, author={Scholle, A. and Greulich-Weber, S. and As, Donat Josef and Mietze, Ch. and Son, N. T. and Hemmingsson, C. and Monemar, B. and Janzén, E. and Gerstmann, Uwe and Sanna, S. and et al.}, year={2010}, pages={1728–1731} }","chicago":"Scholle, A., S. Greulich-Weber, Donat Josef As, Ch. Mietze, N. T. Son, C. Hemmingsson, B. Monemar, et al. “Magnetic Characterization of Conductance Electrons in GaN.” <i>Physica Status Solidi (b)</i> 247, no. 7 (2010): 1728–31. <a href=\"https://doi.org/10.1002/pssb.200983582\">https://doi.org/10.1002/pssb.200983582</a>.","ieee":"A. Scholle <i>et al.</i>, “Magnetic characterization of conductance electrons in GaN,” <i>physica status solidi (b)</i>, vol. 247, no. 7, pp. 1728–1731, 2010, doi: <a href=\"https://doi.org/10.1002/pssb.200983582\">10.1002/pssb.200983582</a>.","ama":"Scholle A, Greulich-Weber S, As DJ, et al. Magnetic characterization of conductance electrons in GaN. <i>physica status solidi (b)</i>. 2010;247(7):1728-1731. doi:<a href=\"https://doi.org/10.1002/pssb.200983582\">10.1002/pssb.200983582</a>"},"publication_identifier":{"issn":["0370-1972","1521-3951"]},"publication_status":"published","issue":"7","title":"Magnetic characterization of conductance electrons in GaN","doi":"10.1002/pssb.200983582","date_updated":"2025-12-16T07:46:59Z","volume":247,"author":[{"first_name":"A.","full_name":"Scholle, A.","last_name":"Scholle"},{"last_name":"Greulich-Weber","full_name":"Greulich-Weber, S.","first_name":"S."},{"first_name":"Donat Josef","last_name":"As","orcid":"0000-0003-1121-3565","id":"14","full_name":"As, Donat Josef"},{"first_name":"Ch.","last_name":"Mietze","full_name":"Mietze, Ch."},{"first_name":"N. T.","last_name":"Son","full_name":"Son, N. T."},{"full_name":"Hemmingsson, C.","last_name":"Hemmingsson","first_name":"C."},{"first_name":"B.","full_name":"Monemar, B.","last_name":"Monemar"},{"last_name":"Janzén","full_name":"Janzén, E.","first_name":"E."},{"full_name":"Gerstmann, Uwe","id":"171","orcid":"0000-0002-4476-223X","last_name":"Gerstmann","first_name":"Uwe"},{"first_name":"S.","full_name":"Sanna, S.","last_name":"Sanna"},{"full_name":"Rauls, E.","last_name":"Rauls","first_name":"E."},{"last_name":"Schmidt","orcid":"0000-0002-2717-5076","id":"468","full_name":"Schmidt, Wolf Gero","first_name":"Wolf Gero"}],"date_created":"2019-10-15T07:40:58Z"},{"publication_status":"published","publication_identifier":{"issn":["0370-1972","1521-3951"]},"issue":"8","year":"2010","citation":{"bibtex":"@article{Speiser_Chandola_Hinrichs_Gensch_Cobet_Wippermann_Schmidt_Bechstedt_Richter_Fleischer_et al._2010, title={Metal-insulator transition in Si(111)-(4 × 1)/(8 × 2)-In studied by optical spectroscopy}, volume={247}, DOI={<a href=\"https://doi.org/10.1002/pssb.200983961\">10.1002/pssb.200983961</a>}, number={8}, journal={physica status solidi (b)}, author={Speiser, E. and Chandola, S. and Hinrichs, K. and Gensch, M. and Cobet, C. and Wippermann, S. and Schmidt, Wolf Gero and Bechstedt, F. and Richter, W. and Fleischer, K. and et al.}, year={2010}, pages={2033–2039} }","short":"E. Speiser, S. Chandola, K. Hinrichs, M. Gensch, C. Cobet, S. Wippermann, W.G. Schmidt, F. Bechstedt, W. Richter, K. Fleischer, J.F. McGilp, N. Esser, Physica Status Solidi (b) 247 (2010) 2033–2039.","mla":"Speiser, E., et al. “Metal-Insulator Transition in Si(111)-(4 × 1)/(8 × 2)-In Studied by Optical Spectroscopy.” <i>Physica Status Solidi (b)</i>, vol. 247, no. 8, 2010, pp. 2033–39, doi:<a href=\"https://doi.org/10.1002/pssb.200983961\">10.1002/pssb.200983961</a>.","apa":"Speiser, E., Chandola, S., Hinrichs, K., Gensch, M., Cobet, C., Wippermann, S., Schmidt, W. G., Bechstedt, F., Richter, W., Fleischer, K., McGilp, J. F., &#38; Esser, N. (2010). Metal-insulator transition in Si(111)-(4 × 1)/(8 × 2)-In studied by optical spectroscopy. <i>Physica Status Solidi (b)</i>, <i>247</i>(8), 2033–2039. <a href=\"https://doi.org/10.1002/pssb.200983961\">https://doi.org/10.1002/pssb.200983961</a>","ama":"Speiser E, Chandola S, Hinrichs K, et al. Metal-insulator transition in Si(111)-(4 × 1)/(8 × 2)-In studied by optical spectroscopy. <i>physica status solidi (b)</i>. 2010;247(8):2033-2039. doi:<a href=\"https://doi.org/10.1002/pssb.200983961\">10.1002/pssb.200983961</a>","ieee":"E. Speiser <i>et al.</i>, “Metal-insulator transition in Si(111)-(4 × 1)/(8 × 2)-In studied by optical spectroscopy,” <i>physica status solidi (b)</i>, vol. 247, no. 8, pp. 2033–2039, 2010, doi: <a href=\"https://doi.org/10.1002/pssb.200983961\">10.1002/pssb.200983961</a>.","chicago":"Speiser, E., S. Chandola, K. Hinrichs, M. Gensch, C. Cobet, S. Wippermann, Wolf Gero Schmidt, et al. “Metal-Insulator Transition in Si(111)-(4 × 1)/(8 × 2)-In Studied by Optical Spectroscopy.” <i>Physica Status Solidi (b)</i> 247, no. 8 (2010): 2033–39. <a href=\"https://doi.org/10.1002/pssb.200983961\">https://doi.org/10.1002/pssb.200983961</a>."},"page":"2033-2039","intvolume":"       247","date_updated":"2025-12-16T07:48:40Z","date_created":"2019-10-15T07:35:55Z","author":[{"last_name":"Speiser","full_name":"Speiser, E.","first_name":"E."},{"full_name":"Chandola, S.","last_name":"Chandola","first_name":"S."},{"first_name":"K.","full_name":"Hinrichs, K.","last_name":"Hinrichs"},{"first_name":"M.","full_name":"Gensch, M.","last_name":"Gensch"},{"full_name":"Cobet, C.","last_name":"Cobet","first_name":"C."},{"full_name":"Wippermann, S.","last_name":"Wippermann","first_name":"S."},{"id":"468","full_name":"Schmidt, Wolf Gero","last_name":"Schmidt","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero"},{"first_name":"F.","full_name":"Bechstedt, F.","last_name":"Bechstedt"},{"first_name":"W.","full_name":"Richter, W.","last_name":"Richter"},{"first_name":"K.","full_name":"Fleischer, K.","last_name":"Fleischer"},{"full_name":"McGilp, J. F.","last_name":"McGilp","first_name":"J. F."},{"full_name":"Esser, N.","last_name":"Esser","first_name":"N."}],"volume":247,"title":"Metal-insulator transition in Si(111)-(4 × 1)/(8 × 2)-In studied by optical spectroscopy","doi":"10.1002/pssb.200983961","type":"journal_article","publication":"physica status solidi (b)","status":"public","_id":"13831","user_id":"16199","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"language":[{"iso":"eng"}]},{"title":"First-principles study of water adsorption and a high-density interfacial ice structure on(1×1)-O/Rh(111)","doi":"10.1103/physrevb.82.115402","date_updated":"2025-12-16T07:48:16Z","volume":82,"author":[{"full_name":"Thierfelder, C.","last_name":"Thierfelder","first_name":"C."},{"last_name":"Schmidt","orcid":"0000-0002-2717-5076","full_name":"Schmidt, Wolf Gero","id":"468","first_name":"Wolf Gero"}],"date_created":"2019-10-15T07:37:17Z","year":"2010","intvolume":"        82","citation":{"ama":"Thierfelder C, Schmidt WG. First-principles study of water adsorption and a high-density interfacial ice structure on(1×1)-O/Rh(111). <i>Physical Review B</i>. 2010;82(11). doi:<a href=\"https://doi.org/10.1103/physrevb.82.115402\">10.1103/physrevb.82.115402</a>","ieee":"C. Thierfelder and W. G. Schmidt, “First-principles study of water adsorption and a high-density interfacial ice structure on(1×1)-O/Rh(111),” <i>Physical Review B</i>, vol. 82, no. 11, 2010, doi: <a href=\"https://doi.org/10.1103/physrevb.82.115402\">10.1103/physrevb.82.115402</a>.","chicago":"Thierfelder, C., and Wolf Gero Schmidt. “First-Principles Study of Water Adsorption and a High-Density Interfacial Ice Structure on(1×1)-O/Rh(111).” <i>Physical Review B</i> 82, no. 11 (2010). <a href=\"https://doi.org/10.1103/physrevb.82.115402\">https://doi.org/10.1103/physrevb.82.115402</a>.","apa":"Thierfelder, C., &#38; Schmidt, W. G. (2010). First-principles study of water adsorption and a high-density interfacial ice structure on(1×1)-O/Rh(111). <i>Physical Review B</i>, <i>82</i>(11). <a href=\"https://doi.org/10.1103/physrevb.82.115402\">https://doi.org/10.1103/physrevb.82.115402</a>","bibtex":"@article{Thierfelder_Schmidt_2010, title={First-principles study of water adsorption and a high-density interfacial ice structure on(1×1)-O/Rh(111)}, volume={82}, DOI={<a href=\"https://doi.org/10.1103/physrevb.82.115402\">10.1103/physrevb.82.115402</a>}, number={11}, journal={Physical Review B}, author={Thierfelder, C. and Schmidt, Wolf Gero}, year={2010} }","short":"C. Thierfelder, W.G. Schmidt, Physical Review B 82 (2010).","mla":"Thierfelder, C., and Wolf Gero Schmidt. “First-Principles Study of Water Adsorption and a High-Density Interfacial Ice Structure on(1×1)-O/Rh(111).” <i>Physical Review B</i>, vol. 82, no. 11, 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.82.115402\">10.1103/physrevb.82.115402</a>."},"publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","issue":"11","language":[{"iso":"eng"}],"funded_apc":"1","_id":"13832","project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"user_id":"16199","status":"public","publication":"Physical Review B","type":"journal_article"},{"type":"journal_article","status":"public","project":[{"_id":"52","name":"Computing Resources Provided by the Paderborn Center for Parallel Computing"}],"_id":"13829","user_id":"16199","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"funded_apc":"1","publication_status":"published","publication_identifier":{"issn":["0927-0256"]},"citation":{"apa":"Krivosheeva, A. V., Sanna, S., &#38; Schmidt, W. G. (2010). First-principles investigation of CO adsorption on Pt/Ge(001)-(4×2). <i>Computational Materials Science</i>, <i>49</i>(4), 895–898. <a href=\"https://doi.org/10.1016/j.commatsci.2010.06.043\">https://doi.org/10.1016/j.commatsci.2010.06.043</a>","bibtex":"@article{Krivosheeva_Sanna_Schmidt_2010, title={First-principles investigation of CO adsorption on Pt/Ge(001)-(4×2)}, volume={49}, DOI={<a href=\"https://doi.org/10.1016/j.commatsci.2010.06.043\">10.1016/j.commatsci.2010.06.043</a>}, number={4}, journal={Computational Materials Science}, author={Krivosheeva, A.V. and Sanna, S. and Schmidt, Wolf Gero}, year={2010}, pages={895–898} }","mla":"Krivosheeva, A. V., et al. “First-Principles Investigation of CO Adsorption on Pt/Ge(001)-(4×2).” <i>Computational Materials Science</i>, vol. 49, no. 4, 2010, pp. 895–98, doi:<a href=\"https://doi.org/10.1016/j.commatsci.2010.06.043\">10.1016/j.commatsci.2010.06.043</a>.","short":"A.V. Krivosheeva, S. Sanna, W.G. Schmidt, Computational Materials Science 49 (2010) 895–898.","ama":"Krivosheeva AV, Sanna S, Schmidt WG. First-principles investigation of CO adsorption on Pt/Ge(001)-(4×2). <i>Computational Materials Science</i>. 2010;49(4):895-898. doi:<a href=\"https://doi.org/10.1016/j.commatsci.2010.06.043\">10.1016/j.commatsci.2010.06.043</a>","chicago":"Krivosheeva, A.V., S. Sanna, and Wolf Gero Schmidt. “First-Principles Investigation of CO Adsorption on Pt/Ge(001)-(4×2).” <i>Computational Materials Science</i> 49, no. 4 (2010): 895–98. <a href=\"https://doi.org/10.1016/j.commatsci.2010.06.043\">https://doi.org/10.1016/j.commatsci.2010.06.043</a>.","ieee":"A. V. Krivosheeva, S. Sanna, and W. G. Schmidt, “First-principles investigation of CO adsorption on Pt/Ge(001)-(4×2),” <i>Computational Materials Science</i>, vol. 49, no. 4, pp. 895–898, 2010, doi: <a href=\"https://doi.org/10.1016/j.commatsci.2010.06.043\">10.1016/j.commatsci.2010.06.043</a>."},"intvolume":"        49","page":"895-898","date_updated":"2025-12-16T07:49:36Z","author":[{"full_name":"Krivosheeva, A.V.","last_name":"Krivosheeva","first_name":"A.V."},{"first_name":"S.","last_name":"Sanna","full_name":"Sanna, S."},{"first_name":"Wolf Gero","orcid":"0000-0002-2717-5076","last_name":"Schmidt","id":"468","full_name":"Schmidt, Wolf Gero"}],"volume":49,"doi":"10.1016/j.commatsci.2010.06.043","publication":"Computational Materials Science","language":[{"iso":"eng"}],"issue":"4","year":"2010","date_created":"2019-10-15T07:32:45Z","title":"First-principles investigation of CO adsorption on Pt/Ge(001)-(4×2)"},{"status":"public","type":"journal_article","publication":"Physical Review Letters","funded_apc":"1","language":[{"iso":"eng"}],"user_id":"16199","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"_id":"13827","citation":{"apa":"Wippermann, S., &#38; Schmidt, W. G. (2010). Entropy Explains Metal-Insulator Transition of the Si(111)-In Nanowire Array. <i>Physical Review Letters</i>, <i>105</i>(12). <a href=\"https://doi.org/10.1103/physrevlett.105.126102\">https://doi.org/10.1103/physrevlett.105.126102</a>","mla":"Wippermann, S., and Wolf Gero Schmidt. “Entropy Explains Metal-Insulator Transition of the Si(111)-In Nanowire Array.” <i>Physical Review Letters</i>, vol. 105, no. 12, 2010, doi:<a href=\"https://doi.org/10.1103/physrevlett.105.126102\">10.1103/physrevlett.105.126102</a>.","short":"S. Wippermann, W.G. Schmidt, Physical Review Letters 105 (2010).","bibtex":"@article{Wippermann_Schmidt_2010, title={Entropy Explains Metal-Insulator Transition of the Si(111)-In Nanowire Array}, volume={105}, DOI={<a href=\"https://doi.org/10.1103/physrevlett.105.126102\">10.1103/physrevlett.105.126102</a>}, number={12}, journal={Physical Review Letters}, author={Wippermann, S. and Schmidt, Wolf Gero}, year={2010} }","ama":"Wippermann S, Schmidt WG. Entropy Explains Metal-Insulator Transition of the Si(111)-In Nanowire Array. <i>Physical Review Letters</i>. 2010;105(12). doi:<a href=\"https://doi.org/10.1103/physrevlett.105.126102\">10.1103/physrevlett.105.126102</a>","ieee":"S. Wippermann and W. G. Schmidt, “Entropy Explains Metal-Insulator Transition of the Si(111)-In Nanowire Array,” <i>Physical Review Letters</i>, vol. 105, no. 12, 2010, doi: <a href=\"https://doi.org/10.1103/physrevlett.105.126102\">10.1103/physrevlett.105.126102</a>.","chicago":"Wippermann, S., and Wolf Gero Schmidt. “Entropy Explains Metal-Insulator Transition of the Si(111)-In Nanowire Array.” <i>Physical Review Letters</i> 105, no. 12 (2010). <a href=\"https://doi.org/10.1103/physrevlett.105.126102\">https://doi.org/10.1103/physrevlett.105.126102</a>."},"intvolume":"       105","year":"2010","issue":"12","publication_status":"published","publication_identifier":{"issn":["0031-9007","1079-7114"]},"doi":"10.1103/physrevlett.105.126102","title":"Entropy Explains Metal-Insulator Transition of the Si(111)-In Nanowire Array","date_created":"2019-10-15T07:25:24Z","author":[{"first_name":"S.","full_name":"Wippermann, S.","last_name":"Wippermann"},{"first_name":"Wolf Gero","last_name":"Schmidt","orcid":"0000-0002-2717-5076","id":"468","full_name":"Schmidt, Wolf Gero"}],"volume":105,"date_updated":"2025-12-16T07:50:18Z"},{"intvolume":"        82","citation":{"apa":"Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J. K. N., Schmidt, W. G., &#38; Rauls, E. (2010). Defects in carbon implanted silicon calculated by classical potentials and first-principles methods. <i>Physical Review B</i>, <i>82</i>(9). <a href=\"https://doi.org/10.1103/physrevb.82.094110\">https://doi.org/10.1103/physrevb.82.094110</a>","bibtex":"@article{Zirkelbach_Stritzker_Nordlund_Lindner_Schmidt_Rauls_2010, title={Defects in carbon implanted silicon calculated by classical potentials and first-principles methods}, volume={82}, DOI={<a href=\"https://doi.org/10.1103/physrevb.82.094110\">10.1103/physrevb.82.094110</a>}, number={9}, journal={Physical Review B}, author={Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Lindner, J. K. N. and Schmidt, Wolf Gero and Rauls, E.}, year={2010} }","mla":"Zirkelbach, F., et al. “Defects in Carbon Implanted Silicon Calculated by Classical Potentials and First-Principles Methods.” <i>Physical Review B</i>, vol. 82, no. 9, 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.82.094110\">10.1103/physrevb.82.094110</a>.","short":"F. Zirkelbach, B. Stritzker, K. Nordlund, J.K.N. Lindner, W.G. Schmidt, E. Rauls, Physical Review B 82 (2010).","chicago":"Zirkelbach, F., B. Stritzker, K. Nordlund, J. K. N. Lindner, Wolf Gero Schmidt, and E. Rauls. “Defects in Carbon Implanted Silicon Calculated by Classical Potentials and First-Principles Methods.” <i>Physical Review B</i> 82, no. 9 (2010). <a href=\"https://doi.org/10.1103/physrevb.82.094110\">https://doi.org/10.1103/physrevb.82.094110</a>.","ieee":"F. Zirkelbach, B. Stritzker, K. Nordlund, J. K. N. Lindner, W. G. Schmidt, and E. Rauls, “Defects in carbon implanted silicon calculated by classical potentials and first-principles methods,” <i>Physical Review B</i>, vol. 82, no. 9, 2010, doi: <a href=\"https://doi.org/10.1103/physrevb.82.094110\">10.1103/physrevb.82.094110</a>.","ama":"Zirkelbach F, Stritzker B, Nordlund K, Lindner JKN, Schmidt WG, Rauls E. Defects in carbon implanted silicon calculated by classical potentials and first-principles methods. <i>Physical Review B</i>. 2010;82(9). doi:<a href=\"https://doi.org/10.1103/physrevb.82.094110\">10.1103/physrevb.82.094110</a>"},"year":"2010","issue":"9","publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","doi":"10.1103/physrevb.82.094110","title":"Defects in carbon implanted silicon calculated by classical potentials and first-principles methods","volume":82,"date_created":"2019-10-15T07:28:11Z","author":[{"first_name":"F.","last_name":"Zirkelbach","full_name":"Zirkelbach, F."},{"first_name":"B.","last_name":"Stritzker","full_name":"Stritzker, B."},{"first_name":"K.","full_name":"Nordlund, K.","last_name":"Nordlund"},{"first_name":"J. K. N.","full_name":"Lindner, J. K. N.","last_name":"Lindner"},{"first_name":"Wolf Gero","orcid":"0000-0002-2717-5076","last_name":"Schmidt","id":"468","full_name":"Schmidt, Wolf Gero"},{"last_name":"Rauls","full_name":"Rauls, E.","first_name":"E."}],"date_updated":"2025-12-16T07:49:57Z","status":"public","publication":"Physical Review B","type":"journal_article","funded_apc":"1","language":[{"iso":"eng"}],"department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"user_id":"16199","_id":"13828"},{"intvolume":"        81","citation":{"ieee":"S. Sanna and W. G. Schmidt, “Lithium niobateX-cut,Y-cut, andZ-cut surfaces fromab initiotheory,” <i>Physical Review B</i>, vol. 81, no. 21, 2010, doi: <a href=\"https://doi.org/10.1103/physrevb.81.214116\">10.1103/physrevb.81.214116</a>.","chicago":"Sanna, Simone, and Wolf Gero Schmidt. “Lithium NiobateX-Cut,Y-Cut, AndZ-Cut Surfaces Fromab Initiotheory.” <i>Physical Review B</i> 81, no. 21 (2010). <a href=\"https://doi.org/10.1103/physrevb.81.214116\">https://doi.org/10.1103/physrevb.81.214116</a>.","ama":"Sanna S, Schmidt WG. Lithium niobateX-cut,Y-cut, andZ-cut surfaces fromab initiotheory. <i>Physical Review B</i>. 2010;81(21). doi:<a href=\"https://doi.org/10.1103/physrevb.81.214116\">10.1103/physrevb.81.214116</a>","mla":"Sanna, Simone, and Wolf Gero Schmidt. “Lithium NiobateX-Cut,Y-Cut, AndZ-Cut Surfaces Fromab Initiotheory.” <i>Physical Review B</i>, vol. 81, no. 21, 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.81.214116\">10.1103/physrevb.81.214116</a>.","short":"S. Sanna, W.G. Schmidt, Physical Review B 81 (2010).","bibtex":"@article{Sanna_Schmidt_2010, title={Lithium niobateX-cut,Y-cut, andZ-cut surfaces fromab initiotheory}, volume={81}, DOI={<a href=\"https://doi.org/10.1103/physrevb.81.214116\">10.1103/physrevb.81.214116</a>}, number={21}, journal={Physical Review B}, author={Sanna, Simone and Schmidt, Wolf Gero}, year={2010} }","apa":"Sanna, S., &#38; Schmidt, W. G. (2010). Lithium niobateX-cut,Y-cut, andZ-cut surfaces fromab initiotheory. <i>Physical Review B</i>, <i>81</i>(21). <a href=\"https://doi.org/10.1103/physrevb.81.214116\">https://doi.org/10.1103/physrevb.81.214116</a>"},"year":"2010","issue":"21","publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","doi":"10.1103/physrevb.81.214116","title":"Lithium niobateX-cut,Y-cut, andZ-cut surfaces fromab initiotheory","volume":81,"author":[{"first_name":"Simone","last_name":"Sanna","full_name":"Sanna, Simone"},{"first_name":"Wolf Gero","id":"468","full_name":"Schmidt, Wolf Gero","orcid":"0000-0002-2717-5076","last_name":"Schmidt"}],"date_created":"2019-10-15T07:38:39Z","date_updated":"2025-12-16T07:47:47Z","status":"public","publication":"Physical Review B","type":"journal_article","language":[{"iso":"eng"}],"funded_apc":"1","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"user_id":"16199","_id":"13833","project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}]}]