[{"date_updated":"2025-07-02T12:18:14Z","intvolume":"        33","title":"Roll-Off Factor Analysis of Optical Nyquist Pulses Generated by an On-Chip Mach-Zehnder Modulator","status":"public","year":"2021","author":[{"first_name":"Souvaraj","last_name":"De","full_name":"De, Souvaraj"},{"first_name":"Karanveer","last_name":"Singh","full_name":"Singh, Karanveer"},{"id":"13256","full_name":"Kress, Christian","orcid":"0000-0002-4403-2237","first_name":"Christian","last_name":"Kress"},{"last_name":"Das","first_name":"Ranjan","full_name":"Das, Ranjan"},{"last_name":"Schwabe","first_name":"Tobias","full_name":"Schwabe, Tobias","id":"39217"},{"last_name":"Preußler","first_name":"Stefan","full_name":"Preußler, Stefan"},{"full_name":"Kleine-Ostmann, Thomas","last_name":"Kleine-Ostmann","first_name":"Thomas"},{"full_name":"Scheytt, J. Christoph","first_name":"J. Christoph","last_name":"Scheytt","orcid":"https://orcid.org/0000-0002-5950-6618","id":"37144"},{"first_name":"Thomas","last_name":"Schneider","full_name":"Schneider, Thomas"}],"doi":"10.1109/LPT.2021.3112485","user_id":"13256","volume":33,"page":"1189-1192","_id":"29202","language":[{"iso":"eng"}],"related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/9536766"}]},"project":[{"grant_number":"403154102","_id":"302","name":"PONyDAC: SPP 2111 - PONyDAC II - Präziser Optischer Nyquist-Puls-Synthesizer DAC"},{"grant_number":"13N14882","_id":"299","name":"NyPhE: NyPhE - Nyquist Silicon Photonics Engine"}],"issue":"21","publication":"IEEE Photonics Technology Letters","citation":{"ieee":"S. De <i>et al.</i>, “Roll-Off Factor Analysis of Optical Nyquist Pulses Generated by an On-Chip Mach-Zehnder Modulator,” <i>IEEE Photonics Technology Letters</i>, vol. 33, no. 21, pp. 1189–1192, 2021, doi: <a href=\"https://doi.org/10.1109/LPT.2021.3112485\">10.1109/LPT.2021.3112485</a>.","apa":"De, S., Singh, K., Kress, C., Das, R., Schwabe, T., Preußler, S., Kleine-Ostmann, T., Scheytt, J. C., &#38; Schneider, T. (2021). Roll-Off Factor Analysis of Optical Nyquist Pulses Generated by an On-Chip Mach-Zehnder Modulator. <i>IEEE Photonics Technology Letters</i>, <i>33</i>(21), 1189–1192. <a href=\"https://doi.org/10.1109/LPT.2021.3112485\">https://doi.org/10.1109/LPT.2021.3112485</a>","short":"S. De, K. Singh, C. Kress, R. Das, T. Schwabe, S. Preußler, T. Kleine-Ostmann, J.C. Scheytt, T. Schneider, IEEE Photonics Technology Letters 33 (2021) 1189–1192.","chicago":"De, Souvaraj, Karanveer Singh, Christian Kress, Ranjan Das, Tobias Schwabe, Stefan Preußler, Thomas Kleine-Ostmann, J. Christoph Scheytt, and Thomas Schneider. “Roll-Off Factor Analysis of Optical Nyquist Pulses Generated by an On-Chip Mach-Zehnder Modulator.” <i>IEEE Photonics Technology Letters</i> 33, no. 21 (2021): 1189–92. <a href=\"https://doi.org/10.1109/LPT.2021.3112485\">https://doi.org/10.1109/LPT.2021.3112485</a>.","mla":"De, Souvaraj, et al. “Roll-Off Factor Analysis of Optical Nyquist Pulses Generated by an On-Chip Mach-Zehnder Modulator.” <i>IEEE Photonics Technology Letters</i>, vol. 33, no. 21, 2021, pp. 1189–92, doi:<a href=\"https://doi.org/10.1109/LPT.2021.3112485\">10.1109/LPT.2021.3112485</a>.","bibtex":"@article{De_Singh_Kress_Das_Schwabe_Preußler_Kleine-Ostmann_Scheytt_Schneider_2021, title={Roll-Off Factor Analysis of Optical Nyquist Pulses Generated by an On-Chip Mach-Zehnder Modulator}, volume={33}, DOI={<a href=\"https://doi.org/10.1109/LPT.2021.3112485\">10.1109/LPT.2021.3112485</a>}, number={21}, journal={IEEE Photonics Technology Letters}, author={De, Souvaraj and Singh, Karanveer and Kress, Christian and Das, Ranjan and Schwabe, Tobias and Preußler, Stefan and Kleine-Ostmann, Thomas and Scheytt, J. Christoph and Schneider, Thomas}, year={2021}, pages={1189–1192} }","ama":"De S, Singh K, Kress C, et al. Roll-Off Factor Analysis of Optical Nyquist Pulses Generated by an On-Chip Mach-Zehnder Modulator. <i>IEEE Photonics Technology Letters</i>. 2021;33(21):1189-1192. doi:<a href=\"https://doi.org/10.1109/LPT.2021.3112485\">10.1109/LPT.2021.3112485</a>"},"type":"journal_article","department":[{"_id":"58"},{"_id":"230"}],"date_created":"2022-01-10T11:51:46Z"},{"file":[{"file_id":"20190","success":1,"content_type":"application/pdf","file_name":"2020-10 Hammer - OQE - Hybrid Coupled Mode Modelling Dielectric Tube.pdf","access_level":"closed","file_size":2212769,"relation":"main_file","date_updated":"2020-10-24T08:11:40Z","date_created":"2020-10-24T08:11:40Z","creator":"fossie"}],"date_created":"2020-10-24T08:03:58Z","type":"journal_article","keyword":["tet_topic_waveguides"],"department":[{"_id":"61"},{"_id":"230"},{"_id":"429"}],"publication":"Optical and Quantum Electronics","abstract":[{"lang":"eng","text":"A dielectric step-index optical fiber with tube-like profile is considered, being positioned with a small gap on top of a dielectric slab waveguide. We propose a 2.5-D hybrid analytical/numerical coupled mode model for the evanescent excitation of the tube through semi-guided waves propagating in the slab at oblique angles. The model combines the directional polarized modes supported by the slab with analytic solutions for the TE-, TM-, and orbital-angular-momentum (OAM) modes of the tube-shaped fiber. Implementational details of the scheme are discussed, complemented by finite-element simulations for verification purposes. Our results include configurations with resonant in-fiber excitation of OAM modes with large orbital angular momentum and strong field enhancement."}],"article_number":"472","language":[{"iso":"eng"}],"doi":"10.1007/s11082-020-02595-z","year":"2020","title":"Hybrid coupled mode modelling of the evanescent excitation of a dielectric tube by semi-guided waves at oblique angles","author":[{"id":"48077","orcid":"0000-0002-6331-9348","first_name":"Manfred","last_name":"Hammer","full_name":"Hammer, Manfred"},{"id":"40428","last_name":"Ebers","first_name":"Lena","full_name":"Ebers, Lena"},{"id":"158","full_name":"Förstner, Jens","first_name":"Jens","orcid":"0000-0001-7059-9862","last_name":"Förstner"}],"publication_identifier":{"issn":["0306-8919","1572-817X"]},"publication_status":"published","date_updated":"2022-01-06T06:54:22Z","intvolume":"        52","file_date_updated":"2020-10-24T08:11:40Z","citation":{"mla":"Hammer, Manfred, et al. “Hybrid Coupled Mode Modelling of the Evanescent Excitation of a Dielectric Tube by Semi-Guided Waves at Oblique Angles.” <i>Optical and Quantum Electronics</i>, vol. 52, 472, 2020, doi:<a href=\"https://doi.org/10.1007/s11082-020-02595-z\">10.1007/s11082-020-02595-z</a>.","ama":"Hammer M, Ebers L, Förstner J. Hybrid coupled mode modelling of the evanescent excitation of a dielectric tube by semi-guided waves at oblique angles. <i>Optical and Quantum Electronics</i>. 2020;52. doi:<a href=\"https://doi.org/10.1007/s11082-020-02595-z\">10.1007/s11082-020-02595-z</a>","bibtex":"@article{Hammer_Ebers_Förstner_2020, title={Hybrid coupled mode modelling of the evanescent excitation of a dielectric tube by semi-guided waves at oblique angles}, volume={52}, DOI={<a href=\"https://doi.org/10.1007/s11082-020-02595-z\">10.1007/s11082-020-02595-z</a>}, number={472}, journal={Optical and Quantum Electronics}, author={Hammer, Manfred and Ebers, Lena and Förstner, Jens}, year={2020} }","apa":"Hammer, M., Ebers, L., &#38; Förstner, J. (2020). Hybrid coupled mode modelling of the evanescent excitation of a dielectric tube by semi-guided waves at oblique angles. <i>Optical and Quantum Electronics</i>, <i>52</i>. <a href=\"https://doi.org/10.1007/s11082-020-02595-z\">https://doi.org/10.1007/s11082-020-02595-z</a>","ieee":"M. Hammer, L. Ebers, and J. Förstner, “Hybrid coupled mode modelling of the evanescent excitation of a dielectric tube by semi-guided waves at oblique angles,” <i>Optical and Quantum Electronics</i>, vol. 52, 2020.","short":"M. Hammer, L. Ebers, J. Förstner, Optical and Quantum Electronics 52 (2020).","chicago":"Hammer, Manfred, Lena Ebers, and Jens Förstner. “Hybrid Coupled Mode Modelling of the Evanescent Excitation of a Dielectric Tube by Semi-Guided Waves at Oblique Angles.” <i>Optical and Quantum Electronics</i> 52 (2020). <a href=\"https://doi.org/10.1007/s11082-020-02595-z\">https://doi.org/10.1007/s11082-020-02595-z</a>."},"project":[{"name":"TRR 142 - Project Area C","_id":"56"},{"name":"TRR 142 - Subproject C5","_id":"75"},{"name":"TRR 142","_id":"53"}],"_id":"20189","user_id":"158","ddc":["530"],"volume":52,"status":"public","has_accepted_license":"1"},{"project":[{"_id":"52","name":"Computing Resources Provided by the Paderborn Center for Parallel Computing"}],"file_date_updated":"2020-10-30T13:52:58Z","citation":{"chicago":"Myroshnychenko, Viktor, Stanislav Smirnov, Pious Mathews Mulavarickal Jose, Christian Brosseau, and Jens Förstner. “Nonlinear Dielectric Properties of Random Paraelectric-Dielectric Composites.” <i>Acta Materialia</i> 203 (2020): 116432. <a href=\"https://doi.org/10.1016/j.actamat.2020.10.051\">https://doi.org/10.1016/j.actamat.2020.10.051</a>.","short":"V. Myroshnychenko, S. Smirnov, P.M.M. Jose, C. Brosseau, J. Förstner, Acta Materialia 203 (2020) 116432.","apa":"Myroshnychenko, V., Smirnov, S., Jose, P. M. M., Brosseau, C., &#38; Förstner, J. (2020). Nonlinear dielectric properties of random paraelectric-dielectric composites. <i>Acta Materialia</i>, <i>203</i>, 116432. <a href=\"https://doi.org/10.1016/j.actamat.2020.10.051\">https://doi.org/10.1016/j.actamat.2020.10.051</a>","ieee":"V. Myroshnychenko, S. Smirnov, P. M. M. Jose, C. Brosseau, and J. Förstner, “Nonlinear dielectric properties of random paraelectric-dielectric composites,” <i>Acta Materialia</i>, vol. 203, p. 116432, 2020.","ama":"Myroshnychenko V, Smirnov S, Jose PMM, Brosseau C, Förstner J. Nonlinear dielectric properties of random paraelectric-dielectric composites. <i>Acta Materialia</i>. 2020;203:116432. doi:<a href=\"https://doi.org/10.1016/j.actamat.2020.10.051\">10.1016/j.actamat.2020.10.051</a>","bibtex":"@article{Myroshnychenko_Smirnov_Jose_Brosseau_Förstner_2020, title={Nonlinear dielectric properties of random paraelectric-dielectric composites}, volume={203}, DOI={<a href=\"https://doi.org/10.1016/j.actamat.2020.10.051\">10.1016/j.actamat.2020.10.051</a>}, journal={Acta Materialia}, author={Myroshnychenko, Viktor and Smirnov, Stanislav and Jose, Pious Mathews Mulavarickal and Brosseau, Christian and Förstner, Jens}, year={2020}, pages={116432} }","mla":"Myroshnychenko, Viktor, et al. “Nonlinear Dielectric Properties of Random Paraelectric-Dielectric Composites.” <i>Acta Materialia</i>, vol. 203, 2020, p. 116432, doi:<a href=\"https://doi.org/10.1016/j.actamat.2020.10.051\">10.1016/j.actamat.2020.10.051</a>."},"oa":"1","has_accepted_license":"1","status":"public","user_id":"158","ddc":["530"],"volume":203,"page":"116432","_id":"20233","abstract":[{"lang":"eng","text":"The challenge of designing new tunable nonlinear dielectric materials with tailored properties has attracted an increasing amount of interest recently. Herein, we study the effective nonlinear dielectric response of a stochastic paraelectric-dielectric composite consisting of equilibrium distributions of circular and partially penetrable disks (or parallel, infinitely long, identical, partially penetrable, circular cylinders) of a dielectric phase randomly dispersed in a continuous matrix of a paraelectric phase. The random microstructures were generated using the Metropolis Monte Carlo algorithm. The evaluation of the effective permittivity and tunability were carried out by employing either a Landau thermodynamic model or its Johnson’s approximation to describe the field-dependent permittivity of the paraelectric phase and solving continuum-electrostatics equations using finite element calculations. We reveal that the percolation threshold in this composite governs the critical behavior of the effective permittivity and tunability. For microstructures below the percolation threshold, our simulations demonstrate a strong nonlinear behaviour of the field-dependent effective permittivity and very high tunability that increases as a function of dielectric phase concentration. Above the percolation threshold, the effective permittivity shows the tendency to linearization and the tunability dramatically drops down. The highly reduced permittivity and extraordinarily high tunability are obtained for the composites with dielectric impenetrable disks at high concentrations, in which the triggering of the percolation transition is avoided. The reported results cast light on distinct nonlinear behaviour of 2D and 3D stochastic composites and can guide the design of novel composites with the controlled morphology and tailored permittivity and tunability."}],"publication":"Acta Materialia","type":"journal_article","department":[{"_id":"61"},{"_id":"230"}],"file":[{"date_created":"2020-10-30T13:52:58Z","creator":"fossie","title":"(Accepted Preprint)","content_type":"application/pdf","file_id":"20234","date_updated":"2020-10-30T13:52:58Z","relation":"main_file","access_level":"open_access","file_size":3934721,"file_name":"2020-10 Myroshnychenko - Acta Material (accepted preprint)_compressed.pdf"}],"date_created":"2020-10-30T13:51:42Z","publication_status":"published","date_updated":"2022-01-06T06:54:24Z","intvolume":"       203","title":"Nonlinear dielectric properties of random paraelectric-dielectric composites","year":"2020","author":[{"id":"46371","full_name":"Myroshnychenko, Viktor","last_name":"Myroshnychenko","first_name":"Viktor"},{"full_name":"Smirnov, Stanislav","last_name":"Smirnov","first_name":"Stanislav"},{"full_name":"Jose, Pious Mathews Mulavarickal","first_name":"Pious Mathews Mulavarickal","last_name":"Jose"},{"last_name":"Brosseau","first_name":"Christian","full_name":"Brosseau, Christian"},{"first_name":"Jens","orcid":"0000-0001-7059-9862","last_name":"Förstner","full_name":"Förstner, Jens","id":"158"}],"publication_identifier":{"issn":["1359-6454"]},"doi":"10.1016/j.actamat.2020.10.051","language":[{"iso":"eng"}]},{"issue":"9","publication":"Photonics Research","date_created":"2020-07-16T07:35:01Z","department":[{"_id":"15"},{"_id":"230"},{"_id":"289"}],"type":"journal_article","author":[{"first_name":"Teanchai","last_name":"Chantakit","full_name":"Chantakit, Teanchai"},{"last_name":"Schlickriede","first_name":"Christian","full_name":"Schlickriede, Christian","id":"59792"},{"full_name":"Sain, Basudeb","first_name":"Basudeb","last_name":"Sain"},{"last_name":"Meyer","first_name":"Fabian","full_name":"Meyer, Fabian"},{"last_name":"Weiss","first_name":"Thomas","full_name":"Weiss, Thomas"},{"last_name":"Chattham","first_name":"Nattaporn","full_name":"Chattham, Nattaporn"},{"id":"30525","orcid":"0000-0002-8662-1101","first_name":"Thomas","last_name":"Zentgraf","full_name":"Zentgraf, Thomas"}],"publication_identifier":{"issn":["2327-9125"]},"year":"2020","title":"All-dielectric silicon metalens for two-dimensional particle manipulation in optical tweezers","article_type":"original","intvolume":"         8","publication_status":"published","date_updated":"2022-01-06T06:53:10Z","language":[{"iso":"eng"}],"main_file_link":[{"open_access":"1"}],"doi":"10.1364/prj.389200","citation":{"bibtex":"@article{Chantakit_Schlickriede_Sain_Meyer_Weiss_Chattham_Zentgraf_2020, title={All-dielectric silicon metalens for two-dimensional particle manipulation in optical tweezers}, volume={8}, DOI={<a href=\"https://doi.org/10.1364/prj.389200\">10.1364/prj.389200</a>}, number={9}, journal={Photonics Research}, publisher={OSA}, author={Chantakit, Teanchai and Schlickriede, Christian and Sain, Basudeb and Meyer, Fabian and Weiss, Thomas and Chattham, Nattaporn and Zentgraf, Thomas}, year={2020}, pages={1435–1440} }","ama":"Chantakit T, Schlickriede C, Sain B, et al. All-dielectric silicon metalens for two-dimensional particle manipulation in optical tweezers. <i>Photonics Research</i>. 2020;8(9):1435-1440. doi:<a href=\"https://doi.org/10.1364/prj.389200\">10.1364/prj.389200</a>","mla":"Chantakit, Teanchai, et al. “All-Dielectric Silicon Metalens for Two-Dimensional Particle Manipulation in Optical Tweezers.” <i>Photonics Research</i>, vol. 8, no. 9, OSA, 2020, pp. 1435–40, doi:<a href=\"https://doi.org/10.1364/prj.389200\">10.1364/prj.389200</a>.","short":"T. Chantakit, C. Schlickriede, B. Sain, F. Meyer, T. Weiss, N. Chattham, T. Zentgraf, Photonics Research 8 (2020) 1435–1440.","chicago":"Chantakit, Teanchai, Christian Schlickriede, Basudeb Sain, Fabian Meyer, Thomas Weiss, Nattaporn Chattham, and Thomas Zentgraf. “All-Dielectric Silicon Metalens for Two-Dimensional Particle Manipulation in Optical Tweezers.” <i>Photonics Research</i> 8, no. 9 (2020): 1435–40. <a href=\"https://doi.org/10.1364/prj.389200\">https://doi.org/10.1364/prj.389200</a>.","ieee":"T. Chantakit <i>et al.</i>, “All-dielectric silicon metalens for two-dimensional particle manipulation in optical tweezers,” <i>Photonics Research</i>, vol. 8, no. 9, pp. 1435–1440, 2020.","apa":"Chantakit, T., Schlickriede, C., Sain, B., Meyer, F., Weiss, T., Chattham, N., &#38; Zentgraf, T. (2020). All-dielectric silicon metalens for two-dimensional particle manipulation in optical tweezers. <i>Photonics Research</i>, <i>8</i>(9), 1435–1440. <a href=\"https://doi.org/10.1364/prj.389200\">https://doi.org/10.1364/prj.389200</a>"},"quality_controlled":"1","oa":"1","status":"public","_id":"17390","publisher":"OSA","page":"1435-1440","volume":8,"user_id":"30525"},{"title":"Two-dimensional lateral surface superlattices in GaAs heterostructures with independent control of carrier density and modulation potential","status":"public","year":"2020","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"full_name":"Wang, D. Q.","last_name":"Wang","first_name":"D. Q."},{"id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter"},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."},{"full_name":"Hamilton, A. R.","last_name":"Hamilton","first_name":"A. R."},{"full_name":"Klochan, O.","last_name":"Klochan","first_name":"O."}],"publication_status":"published","date_updated":"2022-01-06T06:53:12Z","article_number":"032102","language":[{"iso":"eng"}],"_id":"17433","user_id":"42514","doi":"10.1063/5.0009462","publication":"Applied Physics Letters","citation":{"bibtex":"@article{Wang_Reuter_Wieck_Hamilton_Klochan_2020, title={Two-dimensional lateral surface superlattices in GaAs heterostructures with independent control of carrier density and modulation potential}, DOI={<a href=\"https://doi.org/10.1063/5.0009462\">10.1063/5.0009462</a>}, number={032102}, journal={Applied Physics Letters}, author={Wang, D. Q. and Reuter, Dirk and Wieck, A. D. and Hamilton, A. R. and Klochan, O.}, year={2020} }","ama":"Wang DQ, Reuter D, Wieck AD, Hamilton AR, Klochan O. Two-dimensional lateral surface superlattices in GaAs heterostructures with independent control of carrier density and modulation potential. <i>Applied Physics Letters</i>. 2020. doi:<a href=\"https://doi.org/10.1063/5.0009462\">10.1063/5.0009462</a>","mla":"Wang, D. Q., et al. “Two-Dimensional Lateral Surface Superlattices in GaAs Heterostructures with Independent Control of Carrier Density and Modulation Potential.” <i>Applied Physics Letters</i>, 032102, 2020, doi:<a href=\"https://doi.org/10.1063/5.0009462\">10.1063/5.0009462</a>.","chicago":"Wang, D. Q., Dirk Reuter, A. D. Wieck, A. R. Hamilton, and O. Klochan. “Two-Dimensional Lateral Surface Superlattices in GaAs Heterostructures with Independent Control of Carrier Density and Modulation Potential.” <i>Applied Physics Letters</i>, 2020. <a href=\"https://doi.org/10.1063/5.0009462\">https://doi.org/10.1063/5.0009462</a>.","short":"D.Q. Wang, D. Reuter, A.D. Wieck, A.R. Hamilton, O. Klochan, Applied Physics Letters (2020).","ieee":"D. Q. Wang, D. Reuter, A. D. Wieck, A. R. Hamilton, and O. Klochan, “Two-dimensional lateral surface superlattices in GaAs heterostructures with independent control of carrier density and modulation potential,” <i>Applied Physics Letters</i>, 2020.","apa":"Wang, D. Q., Reuter, D., Wieck, A. D., Hamilton, A. R., &#38; Klochan, O. (2020). Two-dimensional lateral surface superlattices in GaAs heterostructures with independent control of carrier density and modulation potential. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/5.0009462\">https://doi.org/10.1063/5.0009462</a>"},"date_created":"2020-07-29T08:21:01Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}]},{"date_updated":"2022-01-06T06:53:12Z","publication_status":"published","status":"public","title":"InAs heteroepitaxy on nanopillar-patterned GaAs (111)A","year":"2020","publication_identifier":{"issn":["0022-0248"]},"author":[{"full_name":"Kunnathully, Vinay S.","last_name":"Kunnathully","first_name":"Vinay S."},{"last_name":"Riedl","first_name":"Thomas","full_name":"Riedl, Thomas"},{"last_name":"Trapp","first_name":"Alexander","full_name":"Trapp, Alexander"},{"first_name":"Timo","last_name":"Langer","full_name":"Langer, Timo"},{"last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763"},{"full_name":"Lindner, Jörg K.N.","first_name":"Jörg K.N.","last_name":"Lindner"}],"doi":"10.1016/j.jcrysgro.2020.125597","user_id":"42514","article_number":"125597","_id":"17434","language":[{"iso":"eng"}],"publication":"Journal of Crystal Growth","citation":{"bibtex":"@article{Kunnathully_Riedl_Trapp_Langer_Reuter_Lindner_2020, title={InAs heteroepitaxy on nanopillar-patterned GaAs (111)A}, DOI={<a href=\"https://doi.org/10.1016/j.jcrysgro.2020.125597\">10.1016/j.jcrysgro.2020.125597</a>}, number={125597}, journal={Journal of Crystal Growth}, author={Kunnathully, Vinay S. and Riedl, Thomas and Trapp, Alexander and Langer, Timo and Reuter, Dirk and Lindner, Jörg K.N.}, year={2020} }","ama":"Kunnathully VS, Riedl T, Trapp A, Langer T, Reuter D, Lindner JKN. InAs heteroepitaxy on nanopillar-patterned GaAs (111)A. <i>Journal of Crystal Growth</i>. 2020. doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2020.125597\">10.1016/j.jcrysgro.2020.125597</a>","mla":"Kunnathully, Vinay S., et al. “InAs Heteroepitaxy on Nanopillar-Patterned GaAs (111)A.” <i>Journal of Crystal Growth</i>, 125597, 2020, doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2020.125597\">10.1016/j.jcrysgro.2020.125597</a>.","chicago":"Kunnathully, Vinay S., Thomas Riedl, Alexander Trapp, Timo Langer, Dirk Reuter, and Jörg K.N. Lindner. “InAs Heteroepitaxy on Nanopillar-Patterned GaAs (111)A.” <i>Journal of Crystal Growth</i>, 2020. <a href=\"https://doi.org/10.1016/j.jcrysgro.2020.125597\">https://doi.org/10.1016/j.jcrysgro.2020.125597</a>.","short":"V.S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, J.K.N. Lindner, Journal of Crystal Growth (2020).","ieee":"V. S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, and J. K. N. Lindner, “InAs heteroepitaxy on nanopillar-patterned GaAs (111)A,” <i>Journal of Crystal Growth</i>, 2020.","apa":"Kunnathully, V. S., Riedl, T., Trapp, A., Langer, T., Reuter, D., &#38; Lindner, J. K. N. (2020). InAs heteroepitaxy on nanopillar-patterned GaAs (111)A. <i>Journal of Crystal Growth</i>. <a href=\"https://doi.org/10.1016/j.jcrysgro.2020.125597\">https://doi.org/10.1016/j.jcrysgro.2020.125597</a>"},"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2020-07-29T08:25:37Z"},{"doi":"10.1103/physrevb.101.165429","user_id":"42514","_id":"17435","language":[{"iso":"eng"}],"date_updated":"2022-01-06T06:53:12Z","publication_status":"published","author":[{"first_name":"M.","last_name":"Geier","full_name":"Geier, M."},{"full_name":"Freudenfeld, J.","first_name":"J.","last_name":"Freudenfeld"},{"last_name":"Silva","first_name":"J. T.","full_name":"Silva, J. T."},{"first_name":"V.","last_name":"Umansky","full_name":"Umansky, V."},{"id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter"},{"first_name":"A. D.","last_name":"Wieck","full_name":"Wieck, A. D."},{"first_name":"P. W.","last_name":"Brouwer","full_name":"Brouwer, P. W."},{"full_name":"Ludwig, S.","last_name":"Ludwig","first_name":"S."}],"publication_identifier":{"issn":["2469-9950","2469-9969"]},"year":"2020","status":"public","title":"Electrostatic potential shape of gate-defined quantum point contacts","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","date_created":"2020-07-29T08:27:47Z","citation":{"bibtex":"@article{Geier_Freudenfeld_Silva_Umansky_Reuter_Wieck_Brouwer_Ludwig_2020, title={Electrostatic potential shape of gate-defined quantum point contacts}, DOI={<a href=\"https://doi.org/10.1103/physrevb.101.165429\">10.1103/physrevb.101.165429</a>}, journal={Physical Review B}, author={Geier, M. and Freudenfeld, J. and Silva, J. T. and Umansky, V. and Reuter, Dirk and Wieck, A. D. and Brouwer, P. W. and Ludwig, S.}, year={2020} }","short":"M. Geier, J. Freudenfeld, J.T. Silva, V. Umansky, D. Reuter, A.D. Wieck, P.W. Brouwer, S. Ludwig, Physical Review B (2020).","ama":"Geier M, Freudenfeld J, Silva JT, et al. Electrostatic potential shape of gate-defined quantum point contacts. <i>Physical Review B</i>. 2020. doi:<a href=\"https://doi.org/10.1103/physrevb.101.165429\">10.1103/physrevb.101.165429</a>","chicago":"Geier, M., J. Freudenfeld, J. T. Silva, V. Umansky, Dirk Reuter, A. D. Wieck, P. W. Brouwer, and S. Ludwig. “Electrostatic Potential Shape of Gate-Defined Quantum Point Contacts.” <i>Physical Review B</i>, 2020. <a href=\"https://doi.org/10.1103/physrevb.101.165429\">https://doi.org/10.1103/physrevb.101.165429</a>.","ieee":"M. Geier <i>et al.</i>, “Electrostatic potential shape of gate-defined quantum point contacts,” <i>Physical Review B</i>, 2020.","apa":"Geier, M., Freudenfeld, J., Silva, J. T., Umansky, V., Reuter, D., Wieck, A. D., … Ludwig, S. (2020). Electrostatic potential shape of gate-defined quantum point contacts. <i>Physical Review B</i>. <a href=\"https://doi.org/10.1103/physrevb.101.165429\">https://doi.org/10.1103/physrevb.101.165429</a>","mla":"Geier, M., et al. “Electrostatic Potential Shape of Gate-Defined Quantum Point Contacts.” <i>Physical Review B</i>, 2020, doi:<a href=\"https://doi.org/10.1103/physrevb.101.165429\">10.1103/physrevb.101.165429</a>."},"publication":"Physical Review B"},{"language":[{"iso":"eng"}],"_id":"17436","article_number":"20101","user_id":"42514","doi":"10.1051/epjap/2020190202","author":[{"full_name":"Javaid Iqbal, Muhammad","first_name":"Muhammad","last_name":"Javaid Iqbal"},{"id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter"},{"last_name":"Wieck","first_name":"Andreas Dirk","full_name":"Wieck, Andreas Dirk"},{"full_name":"van der Wal, Caspar","last_name":"van der Wal","first_name":"Caspar"}],"publication_identifier":{"issn":["1286-0042","1286-0050"]},"title":"Characterization of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure","status":"public","year":"2020","publication_status":"published","date_updated":"2022-01-06T06:53:12Z","date_created":"2020-07-29T08:29:26Z","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","citation":{"bibtex":"@article{Javaid Iqbal_Reuter_Wieck_van der Wal_2020, title={Characterization of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure}, DOI={<a href=\"https://doi.org/10.1051/epjap/2020190202\">10.1051/epjap/2020190202</a>}, number={20101}, journal={The European Physical Journal Applied Physics}, author={Javaid Iqbal, Muhammad and Reuter, Dirk and Wieck, Andreas Dirk and van der Wal, Caspar}, year={2020} }","ama":"Javaid Iqbal M, Reuter D, Wieck AD, van der Wal C. Characterization of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure. <i>The European Physical Journal Applied Physics</i>. 2020. doi:<a href=\"https://doi.org/10.1051/epjap/2020190202\">10.1051/epjap/2020190202</a>","mla":"Javaid Iqbal, Muhammad, et al. “Characterization of Low-Resistance Ohmic Contacts to a Two-Dimensional Electron Gas in a GaAs/AlGaAs Heterostructure.” <i>The European Physical Journal Applied Physics</i>, 20101, 2020, doi:<a href=\"https://doi.org/10.1051/epjap/2020190202\">10.1051/epjap/2020190202</a>.","chicago":"Javaid Iqbal, Muhammad, Dirk Reuter, Andreas Dirk Wieck, and Caspar van der Wal. “Characterization of Low-Resistance Ohmic Contacts to a Two-Dimensional Electron Gas in a GaAs/AlGaAs Heterostructure.” <i>The European Physical Journal Applied Physics</i>, 2020. <a href=\"https://doi.org/10.1051/epjap/2020190202\">https://doi.org/10.1051/epjap/2020190202</a>.","short":"M. Javaid Iqbal, D. Reuter, A.D. Wieck, C. van der Wal, The European Physical Journal Applied Physics (2020).","ieee":"M. Javaid Iqbal, D. Reuter, A. D. Wieck, and C. van der Wal, “Characterization of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure,” <i>The European Physical Journal Applied Physics</i>, 2020.","apa":"Javaid Iqbal, M., Reuter, D., Wieck, A. D., &#38; van der Wal, C. (2020). Characterization of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure. <i>The European Physical Journal Applied Physics</i>. <a href=\"https://doi.org/10.1051/epjap/2020190202\">https://doi.org/10.1051/epjap/2020190202</a>"},"publication":"The European Physical Journal Applied Physics","abstract":[{"text":"<jats:p>The study of electron transport in low-dimensional systems is of importance, not only from a fundamental point of view, but also for future electronic and spintronic devices. In this context heterostructures containing a two-dimensional electron gas (2DEG) are a key technology. In particular GaAs/AlGaAs heterostructures, with a 2DEG at typically 100 nm below the surface, are widely studied. In order to explore electron transport in such systems, low-resistance ohmic contacts are required that connect the 2DEG to macroscopic measurement leads at the surface. Here we report on designing and measuring a dedicated device for unraveling the various resistance contributions in such contacts, which include pristine 2DEG series resistance, the 2DEG resistance under a contact, the contact resistance itself, and the influence of pressing a bonding wire onto a contact. We also report here a recipe for contacts with very low resistance values that remain below 10 Ω for annealing times between 20 and 350 s, hence providing the flexibility to use this method for materials with different 2DEG depths. The type of heating, temperature ramp rate and gas forming used for annealing is found to strongly influence the annealing process and hence the quality of the resulting contacts.</jats:p>","lang":"eng"}]},{"publication":"Physical Review B","citation":{"mla":"Ebler, C., et al. “Electrical Detection of Excitonic States by Time-Resolved Conductance Measurements.” <i>Physical Review B</i>, 2020, doi:<a href=\"https://doi.org/10.1103/physrevb.101.125303\">10.1103/physrevb.101.125303</a>.","ama":"Ebler C, Labud PA, Rai AK, Reuter D, Wieck AD, Ludwig A. Electrical detection of excitonic states by time-resolved conductance measurements. <i>Physical Review B</i>. 2020. doi:<a href=\"https://doi.org/10.1103/physrevb.101.125303\">10.1103/physrevb.101.125303</a>","bibtex":"@article{Ebler_Labud_Rai_Reuter_Wieck_Ludwig_2020, title={Electrical detection of excitonic states by time-resolved conductance measurements}, DOI={<a href=\"https://doi.org/10.1103/physrevb.101.125303\">10.1103/physrevb.101.125303</a>}, journal={Physical Review B}, author={Ebler, C. and Labud, P. A. and Rai, A. K. and Reuter, Dirk and Wieck, A. D. and Ludwig, A.}, year={2020} }","apa":"Ebler, C., Labud, P. A., Rai, A. K., Reuter, D., Wieck, A. D., &#38; Ludwig, A. (2020). Electrical detection of excitonic states by time-resolved conductance measurements. <i>Physical Review B</i>. <a href=\"https://doi.org/10.1103/physrevb.101.125303\">https://doi.org/10.1103/physrevb.101.125303</a>","ieee":"C. Ebler, P. A. Labud, A. K. Rai, D. Reuter, A. D. Wieck, and A. Ludwig, “Electrical detection of excitonic states by time-resolved conductance measurements,” <i>Physical Review B</i>, 2020.","chicago":"Ebler, C., P. A. Labud, A. K. Rai, Dirk Reuter, A. D. Wieck, and A. Ludwig. “Electrical Detection of Excitonic States by Time-Resolved Conductance Measurements.” <i>Physical Review B</i>, 2020. <a href=\"https://doi.org/10.1103/physrevb.101.125303\">https://doi.org/10.1103/physrevb.101.125303</a>.","short":"C. Ebler, P.A. Labud, A.K. Rai, D. Reuter, A.D. Wieck, A. Ludwig, Physical Review B (2020)."},"date_created":"2020-07-29T08:30:34Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"title":"Electrical detection of excitonic states by time-resolved conductance measurements","year":"2020","status":"public","publication_identifier":{"issn":["2469-9950","2469-9969"]},"author":[{"first_name":"C.","last_name":"Ebler","full_name":"Ebler, C."},{"first_name":"P. A.","last_name":"Labud","full_name":"Labud, P. A."},{"full_name":"Rai, A. K.","first_name":"A. K.","last_name":"Rai"},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."},{"last_name":"Ludwig","first_name":"A.","full_name":"Ludwig, A."}],"date_updated":"2022-01-06T06:53:12Z","publication_status":"published","_id":"17437","language":[{"iso":"eng"}],"doi":"10.1103/physrevb.101.125303","user_id":"42514"},{"article_type":"original","intvolume":"         6","publication_status":"published","date_updated":"2022-01-06T06:53:14Z","author":[{"full_name":"Zhu, Lingxiao","first_name":"Lingxiao","last_name":"Zhu"},{"last_name":"Liu","first_name":"Xuan","full_name":"Liu, Xuan"},{"full_name":"Sain, Basudeb","first_name":"Basudeb","last_name":"Sain"},{"last_name":"Wang","first_name":"Mengyao","full_name":"Wang, Mengyao"},{"id":"59792","last_name":"Schlickriede","first_name":"Christian","full_name":"Schlickriede, Christian"},{"full_name":"Tang, Yutao","first_name":"Yutao","last_name":"Tang"},{"full_name":"Deng, Junhong","last_name":"Deng","first_name":"Junhong"},{"last_name":"Li","first_name":"Kingfai","full_name":"Li, Kingfai"},{"first_name":"Jun","last_name":"Yang","full_name":"Yang, Jun"},{"full_name":"Holynski, Michael","last_name":"Holynski","first_name":"Michael"},{"full_name":"Zhang, Shuang","first_name":"Shuang","last_name":"Zhang"},{"id":"30525","first_name":"Thomas","orcid":"0000-0002-8662-1101","last_name":"Zentgraf","full_name":"Zentgraf, Thomas"},{"full_name":"Bongs, Kai","first_name":"Kai","last_name":"Bongs"},{"full_name":"Lien, Yu-Hung","first_name":"Yu-Hung","last_name":"Lien"},{"full_name":"Li, Guixin","last_name":"Li","first_name":"Guixin"}],"publication_identifier":{"issn":["2375-2548"]},"year":"2020","title":"A dielectric metasurface optical chip for the generation of cold atoms","doi":"10.1126/sciadv.abb6667","language":[{"iso":"eng"}],"article_number":"eabb6667","abstract":[{"lang":"eng","text":"<jats:p>Compact and robust cold atom sources are increasingly important for quantum research, especially for transferring cutting-edge quantum science into practical applications. In this study, we report on a novel scheme that uses a metasurface optical chip to replace the conventional bulky optical elements used to produce a cold atomic ensemble with a single incident laser beam, which is split by the metasurface into multiple beams of the desired polarization states. Atom numbers ~10<jats:sup>7</jats:sup> and temperatures (about 35 μK) of relevance to quantum sensing are achieved in a compact and robust fashion. Our work highlights the substantial progress toward fully integrated cold atom quantum devices by exploiting metasurface optical chips, which may have great potential in quantum sensing, quantum computing, and other areas.</jats:p>"}],"issue":"31","publication":"Science Advances","department":[{"_id":"15"},{"_id":"230"},{"_id":"289"},{"_id":"623"}],"type":"journal_article","date_created":"2020-08-02T07:22:03Z","status":"public","volume":6,"user_id":"30525","publisher":"American Association for the Advancement of Science","_id":"17523","quality_controlled":"1","citation":{"mla":"Zhu, Lingxiao, et al. “A Dielectric Metasurface Optical Chip for the Generation of Cold Atoms.” <i>Science Advances</i>, vol. 6, no. 31, eabb6667, American Association for the Advancement of Science, 2020, doi:<a href=\"https://doi.org/10.1126/sciadv.abb6667\">10.1126/sciadv.abb6667</a>.","ama":"Zhu L, Liu X, Sain B, et al. A dielectric metasurface optical chip for the generation of cold atoms. <i>Science Advances</i>. 2020;6(31). doi:<a href=\"https://doi.org/10.1126/sciadv.abb6667\">10.1126/sciadv.abb6667</a>","bibtex":"@article{Zhu_Liu_Sain_Wang_Schlickriede_Tang_Deng_Li_Yang_Holynski_et al._2020, title={A dielectric metasurface optical chip for the generation of cold atoms}, volume={6}, DOI={<a href=\"https://doi.org/10.1126/sciadv.abb6667\">10.1126/sciadv.abb6667</a>}, number={31eabb6667}, journal={Science Advances}, publisher={American Association for the Advancement of Science}, author={Zhu, Lingxiao and Liu, Xuan and Sain, Basudeb and Wang, Mengyao and Schlickriede, Christian and Tang, Yutao and Deng, Junhong and Li, Kingfai and Yang, Jun and Holynski, Michael and et al.}, year={2020} }","apa":"Zhu, L., Liu, X., Sain, B., Wang, M., Schlickriede, C., Tang, Y., … Li, G. (2020). A dielectric metasurface optical chip for the generation of cold atoms. <i>Science Advances</i>, <i>6</i>(31). <a href=\"https://doi.org/10.1126/sciadv.abb6667\">https://doi.org/10.1126/sciadv.abb6667</a>","ieee":"L. Zhu <i>et al.</i>, “A dielectric metasurface optical chip for the generation of cold atoms,” <i>Science Advances</i>, vol. 6, no. 31, 2020.","short":"L. Zhu, X. Liu, B. Sain, M. Wang, C. Schlickriede, Y. Tang, J. Deng, K. Li, J. Yang, M. Holynski, S. Zhang, T. Zentgraf, K. Bongs, Y.-H. Lien, G. Li, Science Advances 6 (2020).","chicago":"Zhu, Lingxiao, Xuan Liu, Basudeb Sain, Mengyao Wang, Christian Schlickriede, Yutao Tang, Junhong Deng, et al. “A Dielectric Metasurface Optical Chip for the Generation of Cold Atoms.” <i>Science Advances</i> 6, no. 31 (2020). <a href=\"https://doi.org/10.1126/sciadv.abb6667\">https://doi.org/10.1126/sciadv.abb6667</a>."}},{"_id":"17803","page":"107234","volume":255,"user_id":"158","ddc":["530"],"status":"public","has_accepted_license":"1","oa":"1","citation":{"apa":"Grynko, Y., Shkuratov, Y., &#38; Förstner, J. (2020). Light backscattering from large clusters of densely packed irregular particles. <i>Journal of Quantitative Spectroscopy and Radiative Transfer</i>, <i>255</i>, 107234. <a href=\"https://doi.org/10.1016/j.jqsrt.2020.107234\">https://doi.org/10.1016/j.jqsrt.2020.107234</a>","ieee":"Y. Grynko, Y. Shkuratov, and J. Förstner, “Light backscattering from large clusters of densely packed irregular particles,” <i>Journal of Quantitative Spectroscopy and Radiative Transfer</i>, vol. 255, p. 107234, 2020.","chicago":"Grynko, Yevgen, Yuriy Shkuratov, and Jens Förstner. “Light Backscattering from Large Clusters of Densely Packed Irregular Particles.” <i>Journal of Quantitative Spectroscopy and Radiative Transfer</i> 255 (2020): 107234. <a href=\"https://doi.org/10.1016/j.jqsrt.2020.107234\">https://doi.org/10.1016/j.jqsrt.2020.107234</a>.","short":"Y. Grynko, Y. Shkuratov, J. Förstner, Journal of Quantitative Spectroscopy and Radiative Transfer 255 (2020) 107234.","mla":"Grynko, Yevgen, et al. “Light Backscattering from Large Clusters of Densely Packed Irregular Particles.” <i>Journal of Quantitative Spectroscopy and Radiative Transfer</i>, vol. 255, 2020, p. 107234, doi:<a href=\"https://doi.org/10.1016/j.jqsrt.2020.107234\">10.1016/j.jqsrt.2020.107234</a>.","ama":"Grynko Y, Shkuratov Y, Förstner J. Light backscattering from large clusters of densely packed irregular particles. <i>Journal of Quantitative Spectroscopy and Radiative Transfer</i>. 2020;255:107234. doi:<a href=\"https://doi.org/10.1016/j.jqsrt.2020.107234\">10.1016/j.jqsrt.2020.107234</a>","bibtex":"@article{Grynko_Shkuratov_Förstner_2020, title={Light backscattering from large clusters of densely packed irregular particles}, volume={255}, DOI={<a href=\"https://doi.org/10.1016/j.jqsrt.2020.107234\">10.1016/j.jqsrt.2020.107234</a>}, journal={Journal of Quantitative Spectroscopy and Radiative Transfer}, author={Grynko, Yevgen and Shkuratov, Yuriy and Förstner, Jens}, year={2020}, pages={107234} }"},"file_date_updated":"2020-08-11T15:24:31Z","project":[{"_id":"52","name":"Computing Resources Provided by the Paderborn Center for Parallel Computing"}],"language":[{"iso":"eng"}],"doi":"10.1016/j.jqsrt.2020.107234","author":[{"full_name":"Grynko, Yevgen","last_name":"Grynko","first_name":"Yevgen","id":"26059"},{"last_name":"Shkuratov","first_name":"Yuriy","full_name":"Shkuratov, Yuriy"},{"id":"158","first_name":"Jens","last_name":"Förstner","orcid":"0000-0001-7059-9862","full_name":"Förstner, Jens"}],"publication_identifier":{"issn":["0022-4073"]},"year":"2020","title":"Light backscattering from large clusters of densely packed irregular particles","intvolume":"       255","publication_status":"published","date_updated":"2022-01-06T06:53:20Z","date_created":"2020-08-11T09:07:04Z","file":[{"title":"Preprint","file_id":"17814","content_type":"application/pdf","relation":"main_file","date_updated":"2020-08-11T15:24:31Z","file_name":"2020-08 Grynko - JQSRT PREPRINT - Large Cluster.pdf","file_size":1567605,"access_level":"open_access","date_created":"2020-08-11T15:24:31Z","creator":"fossie"}],"department":[{"_id":"61"},{"_id":"230"}],"keyword":["tet_topic_scattering"],"type":"journal_article","publication":"Journal of Quantitative Spectroscopy and Radiative Transfer","abstract":[{"text":"We numerically simulate multiple light scattering in discrete disordered media represented by large clusters of irregular non-absorbing particles. The packing density of clusters is 0.5. With such conditions diffuse scattering is significantly reduced and light transport follows propagation channels that are determined by the particle size and topology of the medium. This kind of localization produces coherent backscattering intensity surge and enhanced negative polarization branch if compared to lower density samples.","lang":"eng"}]},{"citation":{"short":"A. Beloufa, D. Bouguenna, N. Kermas, D.J. As, Journal of Electronic Materials (2020) 2008–2017.","chicago":"Beloufa, Abbes, Driss Bouguenna, Nawel Kermas, and Donat Josef As. “A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs.” <i>Journal of Electronic Materials</i>, 2020, 2008–17. <a href=\"https://doi.org/10.1007/s11664-019-07927-8\">https://doi.org/10.1007/s11664-019-07927-8</a>.","apa":"Beloufa, A., Bouguenna, D., Kermas, N., &#38; As, D. J. (2020). A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs. <i>Journal of Electronic Materials</i>, 2008–2017. <a href=\"https://doi.org/10.1007/s11664-019-07927-8\">https://doi.org/10.1007/s11664-019-07927-8</a>","ieee":"A. Beloufa, D. Bouguenna, N. Kermas, and D. J. As, “A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs,” <i>Journal of Electronic Materials</i>, pp. 2008–2017, 2020.","ama":"Beloufa A, Bouguenna D, Kermas N, As DJ. A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs. <i>Journal of Electronic Materials</i>. 2020:2008-2017. doi:<a href=\"https://doi.org/10.1007/s11664-019-07927-8\">10.1007/s11664-019-07927-8</a>","bibtex":"@article{Beloufa_Bouguenna_Kermas_As_2020, title={A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs}, DOI={<a href=\"https://doi.org/10.1007/s11664-019-07927-8\">10.1007/s11664-019-07927-8</a>}, journal={Journal of Electronic Materials}, author={Beloufa, Abbes and Bouguenna, Driss and Kermas, Nawel and As, Donat Josef}, year={2020}, pages={2008–2017} }","mla":"Beloufa, Abbes, et al. “A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs.” <i>Journal of Electronic Materials</i>, 2020, pp. 2008–17, doi:<a href=\"https://doi.org/10.1007/s11664-019-07927-8\">10.1007/s11664-019-07927-8</a>."},"publication":"Journal of Electronic Materials","department":[{"_id":"230"}],"type":"journal_article","date_created":"2021-09-07T09:15:01Z","date_updated":"2022-01-06T06:56:01Z","publication_status":"published","author":[{"full_name":"Beloufa, Abbes","last_name":"Beloufa","first_name":"Abbes"},{"first_name":"Driss","last_name":"Bouguenna","full_name":"Bouguenna, Driss"},{"last_name":"Kermas","first_name":"Nawel","full_name":"Kermas, Nawel"},{"id":"14","full_name":"As, Donat Josef","orcid":"0000-0003-1121-3565","first_name":"Donat Josef","last_name":"As"}],"publication_identifier":{"issn":["0361-5235","1543-186X"]},"status":"public","year":"2020","title":"A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs","doi":"10.1007/s11664-019-07927-8","user_id":"14","_id":"23838","language":[{"iso":"eng"}],"page":"2008-2017"},{"date_created":"2021-09-07T09:17:31Z","department":[{"_id":"230"},{"_id":"429"}],"type":"journal_article","citation":{"apa":"Baron, E., Goldhahn, R., Deppe, M., As, D. J., &#38; Feneberg, M. (2020). Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN. <i>Physica Status Solidi (B)</i>. <a href=\"https://doi.org/10.1002/pssb.201900522\">https://doi.org/10.1002/pssb.201900522</a>","ieee":"E. Baron, R. Goldhahn, M. Deppe, D. J. As, and M. Feneberg, “Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN,” <i>physica status solidi (b)</i>, 2020.","short":"E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg, Physica Status Solidi (B) (2020).","chicago":"Baron, Elias, Rüdiger Goldhahn, Michael Deppe, Donat Josef As, and Martin Feneberg. “Photoluminescence Line‐Shape Analysis of Highly N‐Type Doped Zincblende GaN.” <i>Physica Status Solidi (B)</i>, 2020. <a href=\"https://doi.org/10.1002/pssb.201900522\">https://doi.org/10.1002/pssb.201900522</a>.","mla":"Baron, Elias, et al. “Photoluminescence Line‐Shape Analysis of Highly N‐Type Doped Zincblende GaN.” <i>Physica Status Solidi (B)</i>, 1900522, 2020, doi:<a href=\"https://doi.org/10.1002/pssb.201900522\">10.1002/pssb.201900522</a>.","ama":"Baron E, Goldhahn R, Deppe M, As DJ, Feneberg M. Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN. <i>physica status solidi (b)</i>. 2020. doi:<a href=\"https://doi.org/10.1002/pssb.201900522\">10.1002/pssb.201900522</a>","bibtex":"@article{Baron_Goldhahn_Deppe_As_Feneberg_2020, title={Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN}, DOI={<a href=\"https://doi.org/10.1002/pssb.201900522\">10.1002/pssb.201900522</a>}, number={1900522}, journal={physica status solidi (b)}, author={Baron, Elias and Goldhahn, Rüdiger and Deppe, Michael and As, Donat Josef and Feneberg, Martin}, year={2020} }"},"publication":"physica status solidi (b)","language":[{"iso":"eng"}],"_id":"23840","article_number":"1900522","user_id":"14","doi":"10.1002/pssb.201900522","author":[{"full_name":"Baron, Elias","last_name":"Baron","first_name":"Elias"},{"last_name":"Goldhahn","first_name":"Rüdiger","full_name":"Goldhahn, Rüdiger"},{"full_name":"Deppe, Michael","last_name":"Deppe","first_name":"Michael"},{"id":"14","first_name":"Donat Josef","last_name":"As","orcid":"0000-0003-1121-3565","full_name":"As, Donat Josef"},{"full_name":"Feneberg, Martin","first_name":"Martin","last_name":"Feneberg"}],"publication_identifier":{"issn":["0370-1972","1521-3951"]},"year":"2020","title":"Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN","status":"public","publication_status":"published","date_updated":"2022-01-06T06:56:01Z"},{"citation":{"mla":"Deppe, Michael, et al. “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N.” <i>Physica Status Solidi (B)</i>, 1900532, 2020, doi:<a href=\"https://doi.org/10.1002/pssb.201900532\">10.1002/pssb.201900532</a>.","bibtex":"@article{Deppe_Henksmeier_Gerlach_Reuter_As_2020, title={Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N}, DOI={<a href=\"https://doi.org/10.1002/pssb.201900532\">10.1002/pssb.201900532</a>}, number={1900532}, journal={physica status solidi (b)}, author={Deppe, Michael and Henksmeier, Tobias and Gerlach, Jürgen W. and Reuter, Dirk and As, Donat Josef}, year={2020} }","ama":"Deppe M, Henksmeier T, Gerlach JW, Reuter D, As DJ. Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N. <i>physica status solidi (b)</i>. 2020. doi:<a href=\"https://doi.org/10.1002/pssb.201900532\">10.1002/pssb.201900532</a>","ieee":"M. Deppe, T. Henksmeier, J. W. Gerlach, D. Reuter, and D. J. As, “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N,” <i>physica status solidi (b)</i>, 2020.","apa":"Deppe, M., Henksmeier, T., Gerlach, J. W., Reuter, D., &#38; As, D. J. (2020). Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N. <i>Physica Status Solidi (B)</i>. <a href=\"https://doi.org/10.1002/pssb.201900532\">https://doi.org/10.1002/pssb.201900532</a>","short":"M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (B) (2020).","chicago":"Deppe, Michael, Tobias Henksmeier, Jürgen W. Gerlach, Dirk Reuter, and Donat Josef As. “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N.” <i>Physica Status Solidi (B)</i>, 2020. <a href=\"https://doi.org/10.1002/pssb.201900532\">https://doi.org/10.1002/pssb.201900532</a>."},"publication":"physica status solidi (b)","date_created":"2021-09-07T09:18:26Z","department":[{"_id":"230"},{"_id":"429"}],"type":"journal_article","publication_identifier":{"issn":["0370-1972","1521-3951"]},"author":[{"first_name":"Michael","last_name":"Deppe","full_name":"Deppe, Michael"},{"full_name":"Henksmeier, Tobias","first_name":"Tobias","last_name":"Henksmeier"},{"first_name":"Jürgen W.","last_name":"Gerlach","full_name":"Gerlach, Jürgen W."},{"id":"37763","last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk"},{"id":"14","orcid":"0000-0003-1121-3565","first_name":"Donat Josef","last_name":"As","full_name":"As, Donat Josef"}],"year":"2020","title":"Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N","status":"public","date_updated":"2022-01-06T06:56:01Z","publication_status":"published","_id":"23841","language":[{"iso":"eng"}],"article_number":"1900532","doi":"10.1002/pssb.201900532","user_id":"14"},{"status":"public","page":"36361","_id":"20372","user_id":"158","volume":28,"citation":{"mla":"Ebers, Lena, et al. “Light Diffraction in Slab Waveguide Lenses Simulated with the Stepwise Angular Spectrum Method.” <i>Optics Express</i>, vol. 28, no. 24, 2020, p. 36361, doi:<a href=\"https://doi.org/10.1364/oe.409612\">10.1364/oe.409612</a>.","ama":"Ebers L, Hammer M, Förstner J. Light diffraction in slab waveguide lenses simulated with the stepwise angular spectrum method. <i>Optics Express</i>. 2020;28(24):36361. doi:<a href=\"https://doi.org/10.1364/oe.409612\">10.1364/oe.409612</a>","bibtex":"@article{Ebers_Hammer_Förstner_2020, title={Light diffraction in slab waveguide lenses simulated with the stepwise angular spectrum method}, volume={28}, DOI={<a href=\"https://doi.org/10.1364/oe.409612\">10.1364/oe.409612</a>}, number={24}, journal={Optics Express}, author={Ebers, Lena and Hammer, Manfred and Förstner, Jens}, year={2020}, pages={36361} }","apa":"Ebers, L., Hammer, M., &#38; Förstner, J. (2020). Light diffraction in slab waveguide lenses simulated with the stepwise angular spectrum method. <i>Optics Express</i>, <i>28</i>(24), 36361. <a href=\"https://doi.org/10.1364/oe.409612\">https://doi.org/10.1364/oe.409612</a>","ieee":"L. Ebers, M. Hammer, and J. Förstner, “Light diffraction in slab waveguide lenses simulated with the stepwise angular spectrum method,” <i>Optics Express</i>, vol. 28, no. 24, p. 36361, 2020.","short":"L. Ebers, M. Hammer, J. Förstner, Optics Express 28 (2020) 36361.","chicago":"Ebers, Lena, Manfred Hammer, and Jens Förstner. “Light Diffraction in Slab Waveguide Lenses Simulated with the Stepwise Angular Spectrum Method.” <i>Optics Express</i> 28, no. 24 (2020): 36361. <a href=\"https://doi.org/10.1364/oe.409612\">https://doi.org/10.1364/oe.409612</a>."},"project":[{"_id":"53","name":"TRR 142"},{"_id":"56","name":"TRR 142 - Project Area C"},{"name":"TRR 142 - Subproject C4","_id":"74"},{"_id":"52","name":"Computing Resources Provided by the Paderborn Center for Parallel Computing"}],"title":"Light diffraction in slab waveguide lenses simulated with the stepwise angular spectrum method","year":"2020","publication_identifier":{"issn":["1094-4087"]},"author":[{"full_name":"Ebers, Lena","first_name":"Lena","last_name":"Ebers","id":"40428"},{"orcid":"0000-0002-6331-9348","last_name":"Hammer","first_name":"Manfred","full_name":"Hammer, Manfred","id":"48077"},{"full_name":"Förstner, Jens","last_name":"Förstner","orcid":"0000-0001-7059-9862","first_name":"Jens","id":"158"}],"publication_status":"published","date_updated":"2022-01-06T06:54:26Z","intvolume":"        28","language":[{"iso":"eng"}],"doi":"10.1364/oe.409612","issue":"24","publication":"Optics Express","abstract":[{"text":"A stepwise angular spectrum method (SASM) for curved interfaces is presented to calculate the wave propagation in planar lens-like integrated optical structures based on photonic slab waveguides. The method is derived and illustrated for an effective 2D setup first and then for 3D slab waveguide lenses. We employ slab waveguides of different thicknesses connected by curved surfaces to realize a lens-like structure. To simulate the wave propagation in 3D including reflection and scattering losses, the stepwise angular spectrum method is combined with full vectorial finite element computations for subproblems with lower complexity. Our SASM results show excellent agreement with rigorous numerical simulations of the full structures with a substantially lower computational effort and can be utilized for the simulation-based design and optimization of complex and large scale setups.","lang":"eng"}],"date_created":"2020-11-17T09:52:47Z","keyword":["tet_topic_waveguides"],"type":"journal_article","department":[{"_id":"61"},{"_id":"230"},{"_id":"429"}]},{"project":[{"name":"TRR 142","_id":"53"},{"name":"TRR 142 - Project Area B","_id":"55"},{"_id":"66","name":"TRR 142 - Subproject B1"},{"name":"TRR 142 - Project Area C","_id":"56"},{"name":"TRR 142 - Subproject C5","_id":"75"}],"quality_controlled":"1","citation":{"short":"R. Volmert, N. Weber, C. Meier, Journal of Applied Physics 128 (2020).","chicago":"Volmert, Ruth, Nils Weber, and Cedrik Meier. “Nanoantennas Embedded in Zinc Oxide for Second Harmonic Generation Enhancement.” <i>Journal of Applied Physics</i> 128, no. 4 (2020). <a href=\"https://doi.org/10.1063/5.0012813\">https://doi.org/10.1063/5.0012813</a>.","ieee":"R. Volmert, N. Weber, and C. Meier, “Nanoantennas embedded in zinc oxide for second harmonic generation enhancement,” <i>Journal of Applied Physics</i>, vol. 128, no. 4, 2020.","apa":"Volmert, R., Weber, N., &#38; Meier, C. (2020). Nanoantennas embedded in zinc oxide for second harmonic generation enhancement. <i>Journal of Applied Physics</i>, <i>128</i>(4). <a href=\"https://doi.org/10.1063/5.0012813\">https://doi.org/10.1063/5.0012813</a>","bibtex":"@article{Volmert_Weber_Meier_2020, title={Nanoantennas embedded in zinc oxide for second harmonic generation enhancement}, volume={128}, DOI={<a href=\"https://doi.org/10.1063/5.0012813\">10.1063/5.0012813</a>}, number={4043107}, journal={Journal of Applied Physics}, author={Volmert, Ruth and Weber, Nils and Meier, Cedrik}, year={2020} }","ama":"Volmert R, Weber N, Meier C. Nanoantennas embedded in zinc oxide for second harmonic generation enhancement. <i>Journal of Applied Physics</i>. 2020;128(4). doi:<a href=\"https://doi.org/10.1063/5.0012813\">10.1063/5.0012813</a>","mla":"Volmert, Ruth, et al. “Nanoantennas Embedded in Zinc Oxide for Second Harmonic Generation Enhancement.” <i>Journal of Applied Physics</i>, vol. 128, no. 4, 043107, 2020, doi:<a href=\"https://doi.org/10.1063/5.0012813\">10.1063/5.0012813</a>."},"isi":"1","external_id":{"isi":["000557311900001"]},"status":"public","volume":128,"user_id":"20798","_id":"20644","abstract":[{"text":"Plasmonic nanoantennas for visible and infrared radiation strongly improve the interaction of light with the matter on the nanoscale due to their strong near-field enhancement. In this study, we investigate a double-resonant plasmonic nanoantenna, which makes use of plasmonic field enhancement, enhanced outcoupling of second harmonic light, and resonant lattice effects. Using this design, we demonstrate how the efficiency of second harmonic generation can be increased significantly by fully embedding the nanoantennas into nonlinear dielectric material ZnO, instead of placing them on the surface. Investigating two different processes, we found that the best fabrication route is embedding the gold nanoantennas in ZnO using an MBE overgrowth process where a thin ZnO layer was deposited on nanoantennas fabricated on a ZnO substrate. In addition, second harmonic generation measurements show that the embedding leads to an enhancement compared to the emission of nanoantennas placed on the ZnO substrate surface. These promising results facilitate further research to determine the influence of the periodicity of the nanoantenna arrangement of the resulting SHG signal.","lang":"eng"}],"issue":"4","publication":"Journal of Applied Physics","department":[{"_id":"230"},{"_id":"429"}],"type":"journal_article","date_created":"2020-12-02T12:57:58Z","article_type":"original","intvolume":"       128","publication_status":"published","date_updated":"2022-01-06T06:54:31Z","publication_identifier":{"eissn":["1089-7550"],"issn":["0021-8979"]},"author":[{"first_name":"Ruth","last_name":"Volmert","full_name":"Volmert, Ruth"},{"full_name":"Weber, Nils","first_name":"Nils","last_name":"Weber"},{"id":"20798","orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier","first_name":"Cedrik","full_name":"Meier, Cedrik"}],"title":"Nanoantennas embedded in zinc oxide for second harmonic generation enhancement","year":"2020","doi":"10.1063/5.0012813","language":[{"iso":"eng"}],"article_number":"043107"},{"year":"2020","title":"Plasmonic metasurfaces for controlling harmonic generations","status":"public","publication_identifier":{"eisbn":["9781785618383"]},"author":[{"first_name":"Thomas","last_name":"Zentgraf","orcid":"0000-0002-8662-1101","full_name":"Zentgraf, Thomas","id":"30525"},{"full_name":"Chen, Shumei","last_name":"Chen","first_name":"Shumei"},{"last_name":"Li","first_name":"Guixin","full_name":"Li, Guixin"},{"full_name":"Zhang, Shuang","last_name":"Zhang","first_name":"Shuang"}],"date_updated":"2022-01-06T06:54:40Z","publication_status":"published","_id":"20847","language":[{"iso":"eng"}],"publisher":"The Institution of Engineering and Technology","doi":"10.1049/SBEW540E_ch8","user_id":"30525","editor":[{"full_name":"Werner, Douglas H.","last_name":"Werner","first_name":"Douglas H."},{"last_name":"Campbell","first_name":"Sawyer D.","full_name":"Campbell, Sawyer D."},{"full_name":"Kang, Lei","first_name":"Lei","last_name":"Kang"}],"publication":"Nanoantennas and Plasmonics: Modelling, design and fabrication","citation":{"mla":"Zentgraf, Thomas, et al. “Plasmonic Metasurfaces for Controlling Harmonic Generations.” <i>Nanoantennas and Plasmonics: Modelling, Design and Fabrication</i>, edited by Douglas H. Werner et al., The Institution of Engineering and Technology, 2020, doi:<a href=\"https://doi.org/10.1049/SBEW540E_ch8\">10.1049/SBEW540E_ch8</a>.","bibtex":"@inbook{Zentgraf_Chen_Li_Zhang_2020, title={Plasmonic metasurfaces for controlling harmonic generations}, DOI={<a href=\"https://doi.org/10.1049/SBEW540E_ch8\">10.1049/SBEW540E_ch8</a>}, booktitle={Nanoantennas and Plasmonics: Modelling, design and fabrication}, publisher={The Institution of Engineering and Technology}, author={Zentgraf, Thomas and Chen, Shumei and Li, Guixin and Zhang, Shuang}, editor={Werner, Douglas H. and Campbell, Sawyer D. and Kang, LeiEditors}, year={2020} }","ama":"Zentgraf T, Chen S, Li G, Zhang S. Plasmonic metasurfaces for controlling harmonic generations. In: Werner DH, Campbell SD, Kang L, eds. <i>Nanoantennas and Plasmonics: Modelling, Design and Fabrication</i>. The Institution of Engineering and Technology; 2020. doi:<a href=\"https://doi.org/10.1049/SBEW540E_ch8\">10.1049/SBEW540E_ch8</a>","ieee":"T. Zentgraf, S. Chen, G. Li, and S. Zhang, “Plasmonic metasurfaces for controlling harmonic generations,” in <i>Nanoantennas and Plasmonics: Modelling, design and fabrication</i>, D. H. Werner, S. D. Campbell, and L. Kang, Eds. The Institution of Engineering and Technology, 2020.","apa":"Zentgraf, T., Chen, S., Li, G., &#38; Zhang, S. (2020). Plasmonic metasurfaces for controlling harmonic generations. In D. H. Werner, S. D. Campbell, &#38; L. Kang (Eds.), <i>Nanoantennas and Plasmonics: Modelling, design and fabrication</i>. The Institution of Engineering and Technology. <a href=\"https://doi.org/10.1049/SBEW540E_ch8\">https://doi.org/10.1049/SBEW540E_ch8</a>","short":"T. Zentgraf, S. Chen, G. Li, S. Zhang, in: D.H. Werner, S.D. Campbell, L. Kang (Eds.), Nanoantennas and Plasmonics: Modelling, Design and Fabrication, The Institution of Engineering and Technology, 2020.","chicago":"Zentgraf, Thomas, Shumei Chen, Guixin Li, and Shuang Zhang. “Plasmonic Metasurfaces for Controlling Harmonic Generations.” In <i>Nanoantennas and Plasmonics: Modelling, Design and Fabrication</i>, edited by Douglas H. Werner, Sawyer D. Campbell, and Lei Kang. The Institution of Engineering and Technology, 2020. <a href=\"https://doi.org/10.1049/SBEW540E_ch8\">https://doi.org/10.1049/SBEW540E_ch8</a>."},"project":[{"name":"TRR 142","_id":"53"},{"_id":"56","name":"TRR 142 - Project Area C"},{"name":"TRR 142 - Subproject C5","_id":"75"}],"date_created":"2021-01-04T08:38:14Z","type":"book_chapter","department":[{"_id":"15"},{"_id":"230"},{"_id":"289"}]},{"_id":"17995","language":[{"iso":"eng"}],"article_number":"063102","doi":"10.1063/5.0002247","user_id":"42514","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"full_name":"Riha, Christian","first_name":"Christian","last_name":"Riha"},{"full_name":"Buchholz, Sven S.","first_name":"Sven S.","last_name":"Buchholz"},{"full_name":"Chiatti, Olivio","last_name":"Chiatti","first_name":"Olivio"},{"last_name":"Wieck","first_name":"Andreas D.","full_name":"Wieck, Andreas D."},{"full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk","id":"37763"},{"last_name":"Fischer","first_name":"Saskia F.","full_name":"Fischer, Saskia F."}],"title":"Excess noise in      Al x   Ga  1 − xAs/GaAs based quantum rings","year":"2020","status":"public","date_updated":"2022-01-06T06:53:24Z","publication_status":"published","date_created":"2020-08-17T06:48:46Z","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","citation":{"bibtex":"@article{Riha_Buchholz_Chiatti_Wieck_Reuter_Fischer_2020, title={Excess noise in      Al x   Ga  1 − xAs/GaAs based quantum rings}, DOI={<a href=\"https://doi.org/10.1063/5.0002247\">10.1063/5.0002247</a>}, number={063102}, journal={Applied Physics Letters}, author={Riha, Christian and Buchholz, Sven S. and Chiatti, Olivio and Wieck, Andreas D. and Reuter, Dirk and Fischer, Saskia F.}, year={2020} }","ama":"Riha C, Buchholz SS, Chiatti O, Wieck AD, Reuter D, Fischer SF. Excess noise in      Al x   Ga  1 − xAs/GaAs based quantum rings. <i>Applied Physics Letters</i>. 2020. doi:<a href=\"https://doi.org/10.1063/5.0002247\">10.1063/5.0002247</a>","mla":"Riha, Christian, et al. “Excess Noise in      Al x   Ga  1 − XAs/GaAs Based Quantum Rings.” <i>Applied Physics Letters</i>, 063102, 2020, doi:<a href=\"https://doi.org/10.1063/5.0002247\">10.1063/5.0002247</a>.","chicago":"Riha, Christian, Sven S. Buchholz, Olivio Chiatti, Andreas D. Wieck, Dirk Reuter, and Saskia F. Fischer. “Excess Noise in      Al x   Ga  1 − XAs/GaAs Based Quantum Rings.” <i>Applied Physics Letters</i>, 2020. <a href=\"https://doi.org/10.1063/5.0002247\">https://doi.org/10.1063/5.0002247</a>.","short":"C. Riha, S.S. Buchholz, O. Chiatti, A.D. Wieck, D. Reuter, S.F. Fischer, Applied Physics Letters (2020).","ieee":"C. Riha, S. S. Buchholz, O. Chiatti, A. D. Wieck, D. Reuter, and S. F. Fischer, “Excess noise in      Al x   Ga  1 − xAs/GaAs based quantum rings,” <i>Applied Physics Letters</i>, 2020.","apa":"Riha, C., Buchholz, S. S., Chiatti, O., Wieck, A. D., Reuter, D., &#38; Fischer, S. F. (2020). Excess noise in      Al x   Ga  1 − xAs/GaAs based quantum rings. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/5.0002247\">https://doi.org/10.1063/5.0002247</a>"},"publication":"Applied Physics Letters"},{"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2021-04-26T06:55:54Z","publication":"Semiconductor Science and Technology","citation":{"mla":"Schuster, J., et al. “Two-Dimensional Electron Bound Hole Photoluminescence in GaAs in Perpendicular Magnetic Fields.” <i>Semiconductor Science and Technology</i>, 085011, 2020, doi:<a href=\"https://doi.org/10.1088/1361-6641/ab89e1\">10.1088/1361-6641/ab89e1</a>.","ama":"Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. 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Wieck, Semiconductor Science and Technology (2020).","chicago":"Schuster, J, T Y Kim, E Batke, Dirk Reuter, and A D Wieck. “Two-Dimensional Electron Bound Hole Photoluminescence in GaAs in Perpendicular Magnetic Fields.” <i>Semiconductor Science and Technology</i>, 2020. <a href=\"https://doi.org/10.1088/1361-6641/ab89e1\">https://doi.org/10.1088/1361-6641/ab89e1</a>."},"doi":"10.1088/1361-6641/ab89e1","user_id":"42514","article_number":"085011","_id":"21796","language":[{"iso":"eng"}],"date_updated":"2022-01-06T06:55:13Z","publication_status":"published","year":"2020","status":"public","title":"Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields","author":[{"last_name":"Schuster","first_name":"J","full_name":"Schuster, J"},{"last_name":"Kim","first_name":"T Y","full_name":"Kim, T Y"},{"last_name":"Batke","first_name":"E","full_name":"Batke, E"},{"full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk","id":"37763"},{"last_name":"Wieck","first_name":"A D","full_name":"Wieck, A D"}],"publication_identifier":{"issn":["0268-1242","1361-6641"]}},{"_id":"21797","language":[{"iso":"eng"}],"user_id":"42514","doi":"10.1103/physrevmaterials.4.014602","year":"2020","title":"Strain-driven InAs island growth on top of GaAs(111) nanopillars","status":"public","publication_identifier":{"issn":["2475-9953"]},"author":[{"last_name":"Riedl","first_name":"T.","full_name":"Riedl, T."},{"full_name":"Kunnathully, V. S.","last_name":"Kunnathully","first_name":"V. S."},{"first_name":"A.","last_name":"Trapp","full_name":"Trapp, A."},{"full_name":"Langer, T.","last_name":"Langer","first_name":"T."},{"full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk","id":"37763"},{"full_name":"Lindner, J. K. N.","first_name":"J. K. N.","last_name":"Lindner"}],"publication_status":"published","date_updated":"2022-01-06T06:55:13Z","date_created":"2021-04-26T07:27:11Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"publication":"Physical Review Materials","citation":{"short":"T. Riedl, V.S. Kunnathully, A. Trapp, T. Langer, D. Reuter, J.K.N. Lindner, Physical Review Materials (2020).","chicago":"Riedl, T., V. S. Kunnathully, A. Trapp, T. Langer, Dirk Reuter, and J. K. N. Lindner. “Strain-Driven InAs Island Growth on Top of GaAs(111) Nanopillars.” <i>Physical Review Materials</i>, 2020. <a href=\"https://doi.org/10.1103/physrevmaterials.4.014602\">https://doi.org/10.1103/physrevmaterials.4.014602</a>.","apa":"Riedl, T., Kunnathully, V. S., Trapp, A., Langer, T., Reuter, D., &#38; Lindner, J. K. N. (2020). Strain-driven InAs island growth on top of GaAs(111) nanopillars. <i>Physical Review Materials</i>. <a href=\"https://doi.org/10.1103/physrevmaterials.4.014602\">https://doi.org/10.1103/physrevmaterials.4.014602</a>","ieee":"T. Riedl, V. S. Kunnathully, A. Trapp, T. Langer, D. Reuter, and J. K. N. Lindner, “Strain-driven InAs island growth on top of GaAs(111) nanopillars,” <i>Physical Review Materials</i>, 2020.","ama":"Riedl T, Kunnathully VS, Trapp A, Langer T, Reuter D, Lindner JKN. Strain-driven InAs island growth on top of GaAs(111) nanopillars. <i>Physical Review Materials</i>. 2020. doi:<a href=\"https://doi.org/10.1103/physrevmaterials.4.014602\">10.1103/physrevmaterials.4.014602</a>","bibtex":"@article{Riedl_Kunnathully_Trapp_Langer_Reuter_Lindner_2020, title={Strain-driven InAs island growth on top of GaAs(111) nanopillars}, DOI={<a href=\"https://doi.org/10.1103/physrevmaterials.4.014602\">10.1103/physrevmaterials.4.014602</a>}, journal={Physical Review Materials}, author={Riedl, T. and Kunnathully, V. S. and Trapp, A. and Langer, T. and Reuter, Dirk and Lindner, J. K. N.}, year={2020} }","mla":"Riedl, T., et al. “Strain-Driven InAs Island Growth on Top of GaAs(111) Nanopillars.” <i>Physical Review Materials</i>, 2020, doi:<a href=\"https://doi.org/10.1103/physrevmaterials.4.014602\">10.1103/physrevmaterials.4.014602</a>."}}]