[{"project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"},{"name":"PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"publication_status":"published","publication_identifier":{"issn":["1050-2947","1094-1622"]},"department":[{"_id":"15"},{"_id":"170"},{"_id":"293"},{"_id":"230"}],"title":"Regeneration of Airy pulses in fiber-optic links with dispersion management of the two leading dispersion terms of opposite signs","language":[{"iso":"eng"}],"doi":"10.1103/physreva.89.043817","date_updated":"2023-04-16T22:08:14Z","date_created":"2021-08-06T09:06:45Z","status":"public","volume":89,"publication":"Physical Review A","author":[{"last_name":"Driben","first_name":"R.","full_name":"Driben, R."},{"id":"344","last_name":"Meier","orcid":"0000-0001-8864-2072","full_name":"Meier, Torsten","first_name":"Torsten"}],"user_id":"49063","abstract":[{"lang":"eng","text":"Dispersion management of periodically alternating fiber sections with opposite signs of two leading dispersion terms is applied for the regeneration of self-accelerating truncated Airy pulses. It is demonstrated that for such a dispersion management scheme, the direction of the acceleration of the pulse is reversed twice within each period. In this scheme the system features light hot spots in the center of each fiber section, where the energy of the light pulse is tightly focused in a short temporal slot. Comprehensive numerical studies demonstrate a long-lasting propagation also under the influence of a strong fiber Kerr nonlinearity."}],"type":"journal_article","year":"2014","citation":{"apa":"Driben, R., & Meier, T. (2014). Regeneration of Airy pulses in fiber-optic links with dispersion management of the two leading dispersion terms of opposite signs. Physical Review A, 89(4), Article 043817. https://doi.org/10.1103/physreva.89.043817","ama":"Driben R, Meier T. Regeneration of Airy pulses in fiber-optic links with dispersion management of the two leading dispersion terms of opposite signs. Physical Review A. 2014;89(4). doi:10.1103/physreva.89.043817","chicago":"Driben, R., and Torsten Meier. “Regeneration of Airy Pulses in Fiber-Optic Links with Dispersion Management of the Two Leading Dispersion Terms of Opposite Signs.” Physical Review A 89, no. 4 (2014). https://doi.org/10.1103/physreva.89.043817.","mla":"Driben, R., and Torsten Meier. “Regeneration of Airy Pulses in Fiber-Optic Links with Dispersion Management of the Two Leading Dispersion Terms of Opposite Signs.” Physical Review A, vol. 89, no. 4, 043817, 2014, doi:10.1103/physreva.89.043817.","bibtex":"@article{Driben_Meier_2014, title={Regeneration of Airy pulses in fiber-optic links with dispersion management of the two leading dispersion terms of opposite signs}, volume={89}, DOI={10.1103/physreva.89.043817}, number={4043817}, journal={Physical Review A}, author={Driben, R. and Meier, Torsten}, year={2014} }","short":"R. Driben, T. Meier, Physical Review A 89 (2014).","ieee":"R. Driben and T. Meier, “Regeneration of Airy pulses in fiber-optic links with dispersion management of the two leading dispersion terms of opposite signs,” Physical Review A, vol. 89, no. 4, Art. no. 043817, 2014, doi: 10.1103/physreva.89.043817."},"issue":"4","article_number":"043817","_id":"22958","intvolume":" 89"},{"publication_identifier":{"issn":["1567-1739"]},"publication_status":"published","volume":14,"status":"public","date_created":"2019-01-29T12:43:55Z","author":[{"full_name":"Lo, Fang-Yuh","first_name":"Fang-Yuh","last_name":"Lo"},{"full_name":"Guo, Jhong-Yu","first_name":"Jhong-Yu","last_name":"Guo"},{"last_name":"Huang","full_name":"Huang, Cheng-De","first_name":"Cheng-De"},{"full_name":"Chou, Kai-Chieh","first_name":"Kai-Chieh","last_name":"Chou"},{"last_name":"Liu","first_name":"Hsiang-Lin","full_name":"Liu, Hsiang-Lin"},{"full_name":"Ney, Verena","first_name":"Verena","last_name":"Ney"},{"full_name":"Ney, Andreas","first_name":"Andreas","last_name":"Ney"},{"first_name":"Ming-Yau","full_name":"Chern, Ming-Yau","last_name":"Chern"},{"full_name":"Shvarkov, Stepan","first_name":"Stepan","last_name":"Shvarkov"},{"first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763"},{"full_name":"Wieck, Andreas D.","first_name":"Andreas D.","last_name":"Wieck"},{"last_name":"Pezzagna","first_name":"Sébastien","full_name":"Pezzagna, Sébastien"},{"last_name":"Massies","first_name":"Jean","full_name":"Massies, Jean"}],"publisher":"Elsevier BV","publication":"Current Applied Physics","department":[{"_id":"15"},{"_id":"230"}],"title":"Evidences of defect contribution in magnetically ordered Sm-implanted GaN","user_id":"42514","year":"2013","citation":{"ieee":"F.-Y. Lo et al., “Evidences of defect contribution in magnetically ordered Sm-implanted GaN,” Current Applied Physics, vol. 14, pp. S7–S11, 2013.","short":"F.-Y. Lo, J.-Y. Guo, C.-D. Huang, K.-C. Chou, H.-L. Liu, V. Ney, A. Ney, M.-Y. Chern, S. Shvarkov, D. Reuter, A.D. Wieck, S. Pezzagna, J. Massies, Current Applied Physics 14 (2013) S7–S11.","mla":"Lo, Fang-Yuh, et al. “Evidences of Defect Contribution in Magnetically Ordered Sm-Implanted GaN.” Current Applied Physics, vol. 14, Elsevier BV, 2013, pp. S7–11, doi:10.1016/j.cap.2013.11.051.","bibtex":"@article{Lo_Guo_Huang_Chou_Liu_Ney_Ney_Chern_Shvarkov_Reuter_et al._2013, title={Evidences of defect contribution in magnetically ordered Sm-implanted GaN}, volume={14}, DOI={10.1016/j.cap.2013.11.051}, journal={Current Applied Physics}, publisher={Elsevier BV}, author={Lo, Fang-Yuh and Guo, Jhong-Yu and Huang, Cheng-De and Chou, Kai-Chieh and Liu, Hsiang-Lin and Ney, Verena and Ney, Andreas and Chern, Ming-Yau and Shvarkov, Stepan and Reuter, Dirk and et al.}, year={2013}, pages={S7–S11} }","chicago":"Lo, Fang-Yuh, Jhong-Yu Guo, Cheng-De Huang, Kai-Chieh Chou, Hsiang-Lin Liu, Verena Ney, Andreas Ney, et al. “Evidences of Defect Contribution in Magnetically Ordered Sm-Implanted GaN.” Current Applied Physics 14 (2013): S7–11. https://doi.org/10.1016/j.cap.2013.11.051.","ama":"Lo F-Y, Guo J-Y, Huang C-D, et al. Evidences of defect contribution in magnetically ordered Sm-implanted GaN. Current Applied Physics. 2013;14:S7-S11. doi:10.1016/j.cap.2013.11.051","apa":"Lo, F.-Y., Guo, J.-Y., Huang, C.-D., Chou, K.-C., Liu, H.-L., Ney, V., … Massies, J. (2013). Evidences of defect contribution in magnetically ordered Sm-implanted GaN. Current Applied Physics, 14, S7–S11. https://doi.org/10.1016/j.cap.2013.11.051"},"type":"journal_article","page":"S7-S11","language":[{"iso":"eng"}],"doi":"10.1016/j.cap.2013.11.051","intvolume":" 14","_id":"7236","date_updated":"2022-01-06T07:03:30Z"},{"type":"journal_article","year":"2013","citation":{"short":"A. Steinhoff, H. Kurtze, P. Gartner, M. Florian, D. Reuter, A.D. Wieck, M. Bayer, F. Jahnke, Physical Review B 88 (2013).","ieee":"A. Steinhoff et al., “Combined influence of Coulomb interaction and polarons on the carrier dynamics in InGaAs quantum dots,” Physical Review B, vol. 88, no. 20, 2013.","chicago":"Steinhoff, A., H. Kurtze, P. Gartner, M. Florian, Dirk Reuter, A. D. Wieck, M. Bayer, and F. Jahnke. “Combined Influence of Coulomb Interaction and Polarons on the Carrier Dynamics in InGaAs Quantum Dots.” Physical Review B 88, no. 20 (2013). https://doi.org/10.1103/physrevb.88.205309.","apa":"Steinhoff, A., Kurtze, H., Gartner, P., Florian, M., Reuter, D., Wieck, A. D., … Jahnke, F. (2013). Combined influence of Coulomb interaction and polarons on the carrier dynamics in InGaAs quantum dots. Physical Review B, 88(20). https://doi.org/10.1103/physrevb.88.205309","ama":"Steinhoff A, Kurtze H, Gartner P, et al. Combined influence of Coulomb interaction and polarons on the carrier dynamics in InGaAs quantum dots. Physical Review B. 2013;88(20). doi:10.1103/physrevb.88.205309","bibtex":"@article{Steinhoff_Kurtze_Gartner_Florian_Reuter_Wieck_Bayer_Jahnke_2013, title={Combined influence of Coulomb interaction and polarons on the carrier dynamics in InGaAs quantum dots}, volume={88}, DOI={10.1103/physrevb.88.205309}, number={20}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Steinhoff, A. and Kurtze, H. and Gartner, P. and Florian, M. and Reuter, Dirk and Wieck, A. D. and Bayer, M. and Jahnke, F.}, year={2013} }","mla":"Steinhoff, A., et al. “Combined Influence of Coulomb Interaction and Polarons on the Carrier Dynamics in InGaAs Quantum Dots.” Physical Review B, vol. 88, no. 20, American Physical Society (APS), 2013, doi:10.1103/physrevb.88.205309."},"language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:03:30Z","_id":"7239","intvolume":" 88","doi":"10.1103/physrevb.88.205309","issue":"20","publication":"Physical Review B","department":[{"_id":"15"},{"_id":"230"}],"author":[{"last_name":"Steinhoff","full_name":"Steinhoff, A.","first_name":"A."},{"first_name":"H.","full_name":"Kurtze, H.","last_name":"Kurtze"},{"first_name":"P.","full_name":"Gartner, P.","last_name":"Gartner"},{"full_name":"Florian, M.","first_name":"M.","last_name":"Florian"},{"id":"37763","last_name":"Reuter","full_name":"Reuter, Dirk","first_name":"Dirk"},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."},{"full_name":"Bayer, M.","first_name":"M.","last_name":"Bayer"},{"first_name":"F.","full_name":"Jahnke, F.","last_name":"Jahnke"}],"publisher":"American Physical Society (APS)","volume":88,"publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"date_created":"2019-01-29T14:01:47Z","status":"public","title":"Combined influence of Coulomb interaction and polarons on the carrier dynamics in InGaAs quantum dots","user_id":"42514"},{"title":"Picosecond real-space imaging of electron spin diffusion in GaAs","user_id":"42514","publication":"Physical Review B","department":[{"_id":"15"},{"_id":"230"}],"author":[{"first_name":"T.","full_name":"Henn, T.","last_name":"Henn"},{"last_name":"Kiessling","first_name":"T.","full_name":"Kiessling, T."},{"full_name":"Ossau, W.","first_name":"W.","last_name":"Ossau"},{"last_name":"Molenkamp","first_name":"L. W.","full_name":"Molenkamp, L. W."},{"full_name":"Reuter, Dirk","first_name":"Dirk","id":"37763","last_name":"Reuter"},{"first_name":"A. D.","full_name":"Wieck, A. D.","last_name":"Wieck"}],"publisher":"American Physical Society (APS)","volume":88,"publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"date_created":"2019-01-29T14:04:19Z","status":"public","intvolume":" 88","_id":"7240","date_updated":"2022-01-06T07:03:30Z","doi":"10.1103/physrevb.88.195202","issue":"19","year":"2013","type":"journal_article","citation":{"chicago":"Henn, T., T. Kiessling, W. Ossau, L. W. Molenkamp, Dirk Reuter, and A. D. Wieck. “Picosecond Real-Space Imaging of Electron Spin Diffusion in GaAs.” Physical Review B 88, no. 19 (2013). https://doi.org/10.1103/physrevb.88.195202.","apa":"Henn, T., Kiessling, T., Ossau, W., Molenkamp, L. W., Reuter, D., & Wieck, A. D. (2013). Picosecond real-space imaging of electron spin diffusion in GaAs. Physical Review B, 88(19). https://doi.org/10.1103/physrevb.88.195202","ama":"Henn T, Kiessling T, Ossau W, Molenkamp LW, Reuter D, Wieck AD. Picosecond real-space imaging of electron spin diffusion in GaAs. Physical Review B. 2013;88(19). doi:10.1103/physrevb.88.195202","bibtex":"@article{Henn_Kiessling_Ossau_Molenkamp_Reuter_Wieck_2013, title={Picosecond real-space imaging of electron spin diffusion in GaAs}, volume={88}, DOI={10.1103/physrevb.88.195202}, number={19}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Henn, T. and Kiessling, T. and Ossau, W. and Molenkamp, L. W. and Reuter, Dirk and Wieck, A. D.}, year={2013} }","mla":"Henn, T., et al. “Picosecond Real-Space Imaging of Electron Spin Diffusion in GaAs.” Physical Review B, vol. 88, no. 19, American Physical Society (APS), 2013, doi:10.1103/physrevb.88.195202.","short":"T. Henn, T. Kiessling, W. Ossau, L.W. Molenkamp, D. Reuter, A.D. Wieck, Physical Review B 88 (2013).","ieee":"T. Henn, T. Kiessling, W. Ossau, L. W. Molenkamp, D. Reuter, and A. D. Wieck, “Picosecond real-space imaging of electron spin diffusion in GaAs,” Physical Review B, vol. 88, no. 19, 2013."},"language":[{"iso":"eng"}]},{"issue":"8","doi":"10.1103/physrevb.88.085303","_id":"7258","date_updated":"2022-01-06T07:03:30Z","intvolume":" 88","language":[{"iso":"eng"}],"type":"journal_article","year":"2013","citation":{"mla":"Henn, T., et al. “Hot Carrier Effects on the Magneto-Optical Detection of Electron Spins in GaAs.” Physical Review B, vol. 88, no. 8, American Physical Society (APS), 2013, doi:10.1103/physrevb.88.085303.","bibtex":"@article{Henn_Heckel_Beck_Kiessling_Ossau_Molenkamp_Reuter_Wieck_2013, title={Hot carrier effects on the magneto-optical detection of electron spins in GaAs}, volume={88}, DOI={10.1103/physrevb.88.085303}, number={8}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Henn, T. and Heckel, A. and Beck, M. and Kiessling, T. and Ossau, W. and Molenkamp, L. W. and Reuter, Dirk and Wieck, A. D.}, year={2013} }","chicago":"Henn, T., A. Heckel, M. Beck, T. Kiessling, W. Ossau, L. W. Molenkamp, Dirk Reuter, and A. D. Wieck. “Hot Carrier Effects on the Magneto-Optical Detection of Electron Spins in GaAs.” Physical Review B 88, no. 8 (2013). https://doi.org/10.1103/physrevb.88.085303.","apa":"Henn, T., Heckel, A., Beck, M., Kiessling, T., Ossau, W., Molenkamp, L. W., … Wieck, A. D. (2013). Hot carrier effects on the magneto-optical detection of electron spins in GaAs. Physical Review B, 88(8). https://doi.org/10.1103/physrevb.88.085303","ama":"Henn T, Heckel A, Beck M, et al. Hot carrier effects on the magneto-optical detection of electron spins in GaAs. Physical Review B. 2013;88(8). doi:10.1103/physrevb.88.085303","ieee":"T. Henn et al., “Hot carrier effects on the magneto-optical detection of electron spins in GaAs,” Physical Review B, vol. 88, no. 8, 2013.","short":"T. Henn, A. Heckel, M. Beck, T. Kiessling, W. Ossau, L.W. Molenkamp, D. Reuter, A.D. Wieck, Physical Review B 88 (2013)."},"user_id":"42514","title":"Hot carrier effects on the magneto-optical detection of electron spins in GaAs","date_created":"2019-01-30T12:54:43Z","status":"public","publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"volume":88,"publication":"Physical Review B","department":[{"_id":"15"},{"_id":"230"}],"publisher":"American Physical Society (APS)","author":[{"last_name":"Henn","first_name":"T.","full_name":"Henn, T."},{"last_name":"Heckel","full_name":"Heckel, A.","first_name":"A."},{"last_name":"Beck","first_name":"M.","full_name":"Beck, M."},{"full_name":"Kiessling, T.","first_name":"T.","last_name":"Kiessling"},{"last_name":"Ossau","full_name":"Ossau, W.","first_name":"W."},{"last_name":"Molenkamp","first_name":"L. W.","full_name":"Molenkamp, L. W."},{"full_name":"Reuter, Dirk","first_name":"Dirk","id":"37763","last_name":"Reuter"},{"last_name":"Wieck","full_name":"Wieck, A. D.","first_name":"A. D."}]},{"status":"public","date_created":"2019-01-30T12:56:20Z","volume":103,"author":[{"first_name":"J. H.","full_name":"Buß, J. H.","last_name":"Buß"},{"last_name":"Rudolph","full_name":"Rudolph, J.","first_name":"J."},{"full_name":"Shvarkov, S.","first_name":"S.","last_name":"Shvarkov"},{"last_name":"Semond","full_name":"Semond, F.","first_name":"F."},{"full_name":"Reuter, Dirk","first_name":"Dirk","id":"37763","last_name":"Reuter"},{"first_name":"A. D.","full_name":"Wieck, A. D.","last_name":"Wieck"},{"last_name":"Hägele","first_name":"D.","full_name":"Hägele, D."}],"publisher":"AIP Publishing","publication":"Applied Physics Letters","user_id":"42514","type":"journal_article","year":"2013","citation":{"short":"J.H. Buß, J. Rudolph, S. Shvarkov, F. Semond, D. Reuter, A.D. Wieck, D. Hägele, Applied Physics Letters 103 (2013).","ieee":"J. H. Buß et al., “Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons,” Applied Physics Letters, vol. 103, no. 9, 2013.","chicago":"Buß, J. H., J. Rudolph, S. Shvarkov, F. Semond, Dirk Reuter, A. D. Wieck, and D. Hägele. “Magneto-Optical Studies of Gd-Implanted GaN: No Spin Alignment of Conduction Band Electrons.” Applied Physics Letters 103, no. 9 (2013). https://doi.org/10.1063/1.4819767.","ama":"Buß JH, Rudolph J, Shvarkov S, et al. Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons. Applied Physics Letters. 2013;103(9). doi:10.1063/1.4819767","apa":"Buß, J. H., Rudolph, J., Shvarkov, S., Semond, F., Reuter, D., Wieck, A. D., & Hägele, D. (2013). Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons. Applied Physics Letters, 103(9). https://doi.org/10.1063/1.4819767","mla":"Buß, J. H., et al. “Magneto-Optical Studies of Gd-Implanted GaN: No Spin Alignment of Conduction Band Electrons.” Applied Physics Letters, vol. 103, no. 9, 092401, AIP Publishing, 2013, doi:10.1063/1.4819767.","bibtex":"@article{Buß_Rudolph_Shvarkov_Semond_Reuter_Wieck_Hägele_2013, title={Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons}, volume={103}, DOI={10.1063/1.4819767}, number={9092401}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Buß, J. H. and Rudolph, J. and Shvarkov, S. and Semond, F. and Reuter, Dirk and Wieck, A. D. and Hägele, D.}, year={2013} }"},"issue":"9","article_number":"092401","_id":"7259","intvolume":" 103","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"department":[{"_id":"15"},{"_id":"230"}],"title":"Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons","language":[{"iso":"eng"}],"doi":"10.1063/1.4819767","date_updated":"2022-01-06T07:03:30Z"},{"year":"2013","citation":{"chicago":"Carrad, D J, A M Burke, P J Reece, R W Lyttleton, D E J Waddington, A Rai, Dirk Reuter, A D Wieck, and A P Micolich. “The Effect of (NH4)2Sxpassivation on the (311)A GaAs Surface and Its Use in AlGaAs/GaAs Heterostructure Devices.” Journal of Physics: Condensed Matter 25, no. 32 (2013). https://doi.org/10.1088/0953-8984/25/32/325304.","ama":"Carrad DJ, Burke AM, Reece PJ, et al. The effect of (NH4)2Sxpassivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices. Journal of Physics: Condensed Matter. 2013;25(32). doi:10.1088/0953-8984/25/32/325304","apa":"Carrad, D. J., Burke, A. M., Reece, P. J., Lyttleton, R. W., Waddington, D. E. J., Rai, A., … Micolich, A. P. (2013). The effect of (NH4)2Sxpassivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices. Journal of Physics: Condensed Matter, 25(32). https://doi.org/10.1088/0953-8984/25/32/325304","mla":"Carrad, D. J., et al. “The Effect of (NH4)2Sxpassivation on the (311)A GaAs Surface and Its Use in AlGaAs/GaAs Heterostructure Devices.” Journal of Physics: Condensed Matter, vol. 25, no. 32, 325304, IOP Publishing, 2013, doi:10.1088/0953-8984/25/32/325304.","bibtex":"@article{Carrad_Burke_Reece_Lyttleton_Waddington_Rai_Reuter_Wieck_Micolich_2013, title={The effect of (NH4)2Sxpassivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices}, volume={25}, DOI={10.1088/0953-8984/25/32/325304}, number={32325304}, journal={Journal of Physics: Condensed Matter}, publisher={IOP Publishing}, author={Carrad, D J and Burke, A M and Reece, P J and Lyttleton, R W and Waddington, D E J and Rai, A and Reuter, Dirk and Wieck, A D and Micolich, A P}, year={2013} }","short":"D.J. Carrad, A.M. Burke, P.J. Reece, R.W. Lyttleton, D.E.J. Waddington, A. Rai, D. Reuter, A.D. Wieck, A.P. Micolich, Journal of Physics: Condensed Matter 25 (2013).","ieee":"D. J. Carrad et al., “The effect of (NH4)2Sxpassivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices,” Journal of Physics: Condensed Matter, vol. 25, no. 32, 2013."},"type":"journal_article","_id":"7260","intvolume":" 25","issue":"32","article_number":"325304","publication":"Journal of Physics: Condensed Matter","author":[{"first_name":"D J","full_name":"Carrad, D J","last_name":"Carrad"},{"last_name":"Burke","first_name":"A M","full_name":"Burke, A M"},{"full_name":"Reece, P J","first_name":"P J","last_name":"Reece"},{"last_name":"Lyttleton","first_name":"R W","full_name":"Lyttleton, R W"},{"first_name":"D E J","full_name":"Waddington, D E J","last_name":"Waddington"},{"last_name":"Rai","first_name":"A","full_name":"Rai, A"},{"first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763"},{"full_name":"Wieck, A D","first_name":"A D","last_name":"Wieck"},{"last_name":"Micolich","first_name":"A P","full_name":"Micolich, A P"}],"publisher":"IOP Publishing","date_created":"2019-01-30T12:57:16Z","status":"public","volume":25,"user_id":"42514","language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:03:31Z","doi":"10.1088/0953-8984/25/32/325304","department":[{"_id":"15"},{"_id":"230"}],"publication_status":"published","publication_identifier":{"issn":["0953-8984","1361-648X"]},"title":"The effect of (NH4)2Sxpassivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices"},{"user_id":"42514","volume":10,"date_created":"2019-01-30T12:58:14Z","status":"public","publication":"physica status solidi (c)","author":[{"full_name":"Höpfner, Henning","first_name":"Henning","last_name":"Höpfner"},{"last_name":"Fritsche","full_name":"Fritsche, Carola","first_name":"Carola"},{"last_name":"Ludwig","full_name":"Ludwig, Arne","first_name":"Arne"},{"last_name":"Ludwig","full_name":"Ludwig, Astrid","first_name":"Astrid"},{"last_name":"Stromberg","first_name":"Frank","full_name":"Stromberg, Frank"},{"last_name":"Wende","full_name":"Wende, Heiko","first_name":"Heiko"},{"last_name":"Keune","full_name":"Keune, Werner","first_name":"Werner"},{"first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763"},{"last_name":"Wieck","full_name":"Wieck, Andreas D.","first_name":"Andreas D."},{"last_name":"Gerhardt","first_name":"Nils C.","full_name":"Gerhardt, Nils C."},{"full_name":"Hofmann, Martin R.","first_name":"Martin R.","last_name":"Hofmann"}],"publisher":"Wiley","issue":"9","_id":"7261","intvolume":" 10","page":"1214-1217","year":"2013","type":"journal_article","citation":{"bibtex":"@article{Höpfner_Fritsche_Ludwig_Ludwig_Stromberg_Wende_Keune_Reuter_Wieck_Gerhardt_et al._2013, title={Spin relaxation length in quantum dot spin LEDs}, volume={10}, DOI={10.1002/pssc.201200689}, number={9}, journal={physica status solidi (c)}, publisher={Wiley}, author={Höpfner, Henning and Fritsche, Carola and Ludwig, Arne and Ludwig, Astrid and Stromberg, Frank and Wende, Heiko and Keune, Werner and Reuter, Dirk and Wieck, Andreas D. and Gerhardt, Nils C. and et al.}, year={2013}, pages={1214–1217} }","mla":"Höpfner, Henning, et al. “Spin Relaxation Length in Quantum Dot Spin LEDs.” Physica Status Solidi (C), vol. 10, no. 9, Wiley, 2013, pp. 1214–17, doi:10.1002/pssc.201200689.","apa":"Höpfner, H., Fritsche, C., Ludwig, A., Ludwig, A., Stromberg, F., Wende, H., … Hofmann, M. R. (2013). Spin relaxation length in quantum dot spin LEDs. Physica Status Solidi (C), 10(9), 1214–1217. https://doi.org/10.1002/pssc.201200689","ama":"Höpfner H, Fritsche C, Ludwig A, et al. Spin relaxation length in quantum dot spin LEDs. physica status solidi (c). 2013;10(9):1214-1217. doi:10.1002/pssc.201200689","chicago":"Höpfner, Henning, Carola Fritsche, Arne Ludwig, Astrid Ludwig, Frank Stromberg, Heiko Wende, Werner Keune, et al. “Spin Relaxation Length in Quantum Dot Spin LEDs.” Physica Status Solidi (C) 10, no. 9 (2013): 1214–17. https://doi.org/10.1002/pssc.201200689.","ieee":"H. Höpfner et al., “Spin relaxation length in quantum dot spin LEDs,” physica status solidi (c), vol. 10, no. 9, pp. 1214–1217, 2013.","short":"H. Höpfner, C. Fritsche, A. Ludwig, A. Ludwig, F. Stromberg, H. Wende, W. Keune, D. Reuter, A.D. Wieck, N.C. Gerhardt, M.R. Hofmann, Physica Status Solidi (C) 10 (2013) 1214–1217."},"title":"Spin relaxation length in quantum dot spin LEDs","publication_status":"published","publication_identifier":{"issn":["1862-6351"]},"department":[{"_id":"15"},{"_id":"230"}],"doi":"10.1002/pssc.201200689","date_updated":"2022-01-06T07:03:31Z","language":[{"iso":"eng"}]},{"citation":{"chicago":"Prechtel, Jonathan H., Andreas V. Kuhlmann, Julien Houel, Lukas Greuter, Arne Ludwig, Dirk Reuter, Andreas D. Wieck, and Richard J. Warburton. “Frequency-Stabilized Source of Single Photons from a Solid-State Qubit.” Physical Review X 3, no. 4 (2013). https://doi.org/10.1103/physrevx.3.041006.","ama":"Prechtel JH, Kuhlmann AV, Houel J, et al. Frequency-Stabilized Source of Single Photons from a Solid-State Qubit. Physical Review X. 2013;3(4). doi:10.1103/physrevx.3.041006","apa":"Prechtel, J. H., Kuhlmann, A. V., Houel, J., Greuter, L., Ludwig, A., Reuter, D., … Warburton, R. J. (2013). Frequency-Stabilized Source of Single Photons from a Solid-State Qubit. Physical Review X, 3(4). https://doi.org/10.1103/physrevx.3.041006","bibtex":"@article{Prechtel_Kuhlmann_Houel_Greuter_Ludwig_Reuter_Wieck_Warburton_2013, title={Frequency-Stabilized Source of Single Photons from a Solid-State Qubit}, volume={3}, DOI={10.1103/physrevx.3.041006}, number={4}, journal={Physical Review X}, publisher={American Physical Society (APS)}, author={Prechtel, Jonathan H. and Kuhlmann, Andreas V. and Houel, Julien and Greuter, Lukas and Ludwig, Arne and Reuter, Dirk and Wieck, Andreas D. and Warburton, Richard J.}, year={2013} }","mla":"Prechtel, Jonathan H., et al. “Frequency-Stabilized Source of Single Photons from a Solid-State Qubit.” Physical Review X, vol. 3, no. 4, American Physical Society (APS), 2013, doi:10.1103/physrevx.3.041006.","short":"J.H. Prechtel, A.V. Kuhlmann, J. Houel, L. Greuter, A. Ludwig, D. Reuter, A.D. Wieck, R.J. Warburton, Physical Review X 3 (2013).","ieee":"J. H. Prechtel et al., “Frequency-Stabilized Source of Single Photons from a Solid-State Qubit,” Physical Review X, vol. 3, no. 4, 2013."},"type":"journal_article","year":"2013","language":[{"iso":"eng"}],"intvolume":" 3","_id":"7262","date_updated":"2022-01-06T07:03:31Z","doi":"10.1103/physrevx.3.041006","issue":"4","department":[{"_id":"15"},{"_id":"230"}],"publication":"Physical Review X","publisher":"American Physical Society (APS)","author":[{"first_name":"Jonathan H.","full_name":"Prechtel, Jonathan H.","last_name":"Prechtel"},{"full_name":"Kuhlmann, Andreas V.","first_name":"Andreas V.","last_name":"Kuhlmann"},{"last_name":"Houel","first_name":"Julien","full_name":"Houel, Julien"},{"full_name":"Greuter, Lukas","first_name":"Lukas","last_name":"Greuter"},{"last_name":"Ludwig","full_name":"Ludwig, Arne","first_name":"Arne"},{"first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763"},{"full_name":"Wieck, Andreas D.","first_name":"Andreas D.","last_name":"Wieck"},{"full_name":"Warburton, Richard J.","first_name":"Richard J.","last_name":"Warburton"}],"publication_status":"published","volume":3,"publication_identifier":{"issn":["2160-3308"]},"date_created":"2019-01-30T12:59:55Z","status":"public","title":"Frequency-Stabilized Source of Single Photons from a Solid-State Qubit","user_id":"42514"},{"language":[{"iso":"eng"}],"doi":"10.1002/pssb.201200725","date_updated":"2022-01-06T07:03:31Z","publication_identifier":{"issn":["0370-1972"]},"publication_status":"published","department":[{"_id":"15"},{"_id":"230"}],"title":"Biexcitons in semiconductor quantum dot ensembles","page":"1753-1759","type":"journal_article","citation":{"chicago":"Moody, Galan, Rohan Singh, Hebin Li, Ilya A. Akimov, Manfred Bayer, Dirk Reuter, Andreas D. Wieck, Allan S. Bracker, Daniel Gammon, and Steven T. Cundiff. “Biexcitons in Semiconductor Quantum Dot Ensembles.” Physica Status Solidi (B) 250, no. 9 (2013): 1753–59. https://doi.org/10.1002/pssb.201200725.","ama":"Moody G, Singh R, Li H, et al. Biexcitons in semiconductor quantum dot ensembles. physica status solidi (b). 2013;250(9):1753-1759. doi:10.1002/pssb.201200725","apa":"Moody, G., Singh, R., Li, H., Akimov, I. A., Bayer, M., Reuter, D., … Cundiff, S. T. (2013). Biexcitons in semiconductor quantum dot ensembles. Physica Status Solidi (B), 250(9), 1753–1759. https://doi.org/10.1002/pssb.201200725","mla":"Moody, Galan, et al. “Biexcitons in Semiconductor Quantum Dot Ensembles.” Physica Status Solidi (B), vol. 250, no. 9, Wiley, 2013, pp. 1753–59, doi:10.1002/pssb.201200725.","bibtex":"@article{Moody_Singh_Li_Akimov_Bayer_Reuter_Wieck_Bracker_Gammon_Cundiff_2013, title={Biexcitons in semiconductor quantum dot ensembles}, volume={250}, DOI={10.1002/pssb.201200725}, number={9}, journal={physica status solidi (b)}, publisher={Wiley}, author={Moody, Galan and Singh, Rohan and Li, Hebin and Akimov, Ilya A. and Bayer, Manfred and Reuter, Dirk and Wieck, Andreas D. and Bracker, Allan S. and Gammon, Daniel and Cundiff, Steven T.}, year={2013}, pages={1753–1759} }","short":"G. Moody, R. Singh, H. Li, I.A. Akimov, M. Bayer, D. Reuter, A.D. Wieck, A.S. Bracker, D. Gammon, S.T. Cundiff, Physica Status Solidi (B) 250 (2013) 1753–1759.","ieee":"G. Moody et al., “Biexcitons in semiconductor quantum dot ensembles,” physica status solidi (b), vol. 250, no. 9, pp. 1753–1759, 2013."},"year":"2013","issue":"9","_id":"7263","intvolume":" 250","volume":250,"date_created":"2019-01-30T13:07:31Z","status":"public","publication":"physica status solidi (b)","publisher":"Wiley","author":[{"full_name":"Moody, Galan","first_name":"Galan","last_name":"Moody"},{"first_name":"Rohan","full_name":"Singh, Rohan","last_name":"Singh"},{"last_name":"Li","first_name":"Hebin","full_name":"Li, Hebin"},{"last_name":"Akimov","first_name":"Ilya A.","full_name":"Akimov, Ilya A."},{"last_name":"Bayer","full_name":"Bayer, Manfred","first_name":"Manfred"},{"id":"37763","last_name":"Reuter","full_name":"Reuter, Dirk","first_name":"Dirk"},{"last_name":"Wieck","first_name":"Andreas D.","full_name":"Wieck, Andreas D."},{"full_name":"Bracker, Allan S.","first_name":"Allan S.","last_name":"Bracker"},{"last_name":"Gammon","full_name":"Gammon, Daniel","first_name":"Daniel"},{"first_name":"Steven T.","full_name":"Cundiff, Steven T.","last_name":"Cundiff"}],"user_id":"42514"},{"date_updated":"2022-01-06T07:03:31Z","doi":"10.1063/1.4822275","language":[{"iso":"eng"}],"title":"High-resolution mass spectrometer for liquid metal ion sources","department":[{"_id":"15"},{"_id":"230"}],"publication_status":"published","publication_identifier":{"issn":["0034-6748","1089-7623"]},"_id":"7264","intvolume":" 84","article_number":"093305","issue":"9","type":"journal_article","year":"2013","citation":{"short":"M. Wortmann, A. Ludwig, J. Meijer, D. Reuter, A.D. Wieck, Review of Scientific Instruments 84 (2013).","ieee":"M. Wortmann, A. Ludwig, J. Meijer, D. Reuter, and A. D. Wieck, “High-resolution mass spectrometer for liquid metal ion sources,” Review of Scientific Instruments, vol. 84, no. 9, 2013.","chicago":"Wortmann, Martin, Arne Ludwig, Jan Meijer, Dirk Reuter, and Andreas D. Wieck. “High-Resolution Mass Spectrometer for Liquid Metal Ion Sources.” Review of Scientific Instruments 84, no. 9 (2013). https://doi.org/10.1063/1.4822275.","apa":"Wortmann, M., Ludwig, A., Meijer, J., Reuter, D., & Wieck, A. D. (2013). High-resolution mass spectrometer for liquid metal ion sources. Review of Scientific Instruments, 84(9). https://doi.org/10.1063/1.4822275","ama":"Wortmann M, Ludwig A, Meijer J, Reuter D, Wieck AD. High-resolution mass spectrometer for liquid metal ion sources. Review of Scientific Instruments. 2013;84(9). doi:10.1063/1.4822275","mla":"Wortmann, Martin, et al. “High-Resolution Mass Spectrometer for Liquid Metal Ion Sources.” Review of Scientific Instruments, vol. 84, no. 9, 093305, AIP Publishing, 2013, doi:10.1063/1.4822275.","bibtex":"@article{Wortmann_Ludwig_Meijer_Reuter_Wieck_2013, title={High-resolution mass spectrometer for liquid metal ion sources}, volume={84}, DOI={10.1063/1.4822275}, number={9093305}, journal={Review of Scientific Instruments}, publisher={AIP Publishing}, author={Wortmann, Martin and Ludwig, Arne and Meijer, Jan and Reuter, Dirk and Wieck, Andreas D.}, year={2013} }"},"user_id":"42514","author":[{"first_name":"Martin","full_name":"Wortmann, Martin","last_name":"Wortmann"},{"last_name":"Ludwig","first_name":"Arne","full_name":"Ludwig, Arne"},{"first_name":"Jan","full_name":"Meijer, Jan","last_name":"Meijer"},{"first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763"},{"full_name":"Wieck, Andreas D.","first_name":"Andreas D.","last_name":"Wieck"}],"publisher":"AIP Publishing","publication":"Review of Scientific Instruments","volume":84,"status":"public","date_created":"2019-01-30T13:13:29Z"},{"language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:03:31Z","doi":"10.1038/nphys2688","department":[{"_id":"15"},{"_id":"230"}],"publication_status":"published","publication_identifier":{"issn":["1745-2473","1745-2481"]},"title":"Charge noise and spin noise in a semiconductor quantum device","page":"570-575","citation":{"short":"A.V. Kuhlmann, J. Houel, A. Ludwig, L. Greuter, D. Reuter, A.D. Wieck, M. Poggio, R.J. Warburton, Nature Physics 9 (2013) 570–575.","ieee":"A. V. Kuhlmann et al., “Charge noise and spin noise in a semiconductor quantum device,” Nature Physics, vol. 9, no. 9, pp. 570–575, 2013.","chicago":"Kuhlmann, Andreas V., Julien Houel, Arne Ludwig, Lukas Greuter, Dirk Reuter, Andreas D. Wieck, Martino Poggio, and Richard J. Warburton. “Charge Noise and Spin Noise in a Semiconductor Quantum Device.” Nature Physics 9, no. 9 (2013): 570–75. https://doi.org/10.1038/nphys2688.","apa":"Kuhlmann, A. V., Houel, J., Ludwig, A., Greuter, L., Reuter, D., Wieck, A. D., … Warburton, R. J. (2013). Charge noise and spin noise in a semiconductor quantum device. Nature Physics, 9(9), 570–575. https://doi.org/10.1038/nphys2688","ama":"Kuhlmann AV, Houel J, Ludwig A, et al. Charge noise and spin noise in a semiconductor quantum device. Nature Physics. 2013;9(9):570-575. doi:10.1038/nphys2688","bibtex":"@article{Kuhlmann_Houel_Ludwig_Greuter_Reuter_Wieck_Poggio_Warburton_2013, title={Charge noise and spin noise in a semiconductor quantum device}, volume={9}, DOI={10.1038/nphys2688}, number={9}, journal={Nature Physics}, publisher={Springer Nature}, author={Kuhlmann, Andreas V. and Houel, Julien and Ludwig, Arne and Greuter, Lukas and Reuter, Dirk and Wieck, Andreas D. and Poggio, Martino and Warburton, Richard J.}, year={2013}, pages={570–575} }","mla":"Kuhlmann, Andreas V., et al. “Charge Noise and Spin Noise in a Semiconductor Quantum Device.” Nature Physics, vol. 9, no. 9, Springer Nature, 2013, pp. 570–75, doi:10.1038/nphys2688."},"year":"2013","type":"journal_article","intvolume":" 9","_id":"7266","issue":"9","publication":"Nature Physics","author":[{"first_name":"Andreas V.","full_name":"Kuhlmann, Andreas V.","last_name":"Kuhlmann"},{"last_name":"Houel","first_name":"Julien","full_name":"Houel, Julien"},{"first_name":"Arne","full_name":"Ludwig, Arne","last_name":"Ludwig"},{"last_name":"Greuter","full_name":"Greuter, Lukas","first_name":"Lukas"},{"first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763"},{"last_name":"Wieck","first_name":"Andreas D.","full_name":"Wieck, Andreas D."},{"first_name":"Martino","full_name":"Poggio, Martino","last_name":"Poggio"},{"last_name":"Warburton","full_name":"Warburton, Richard J.","first_name":"Richard J."}],"publisher":"Springer Nature","date_created":"2019-01-30T13:15:20Z","status":"public","volume":9,"user_id":"42514"},{"intvolume":" 84","_id":"7267","issue":"7","article_number":"073905","type":"journal_article","citation":{"ieee":"A. V. Kuhlmann et al., “A dark-field microscope for background-free detection of resonance fluorescence from single semiconductor quantum dots operating in a set-and-forget mode,” Review of Scientific Instruments, vol. 84, no. 7, 2013.","short":"A.V. Kuhlmann, J. Houel, D. Brunner, A. Ludwig, D. Reuter, A.D. Wieck, R.J. Warburton, Review of Scientific Instruments 84 (2013).","bibtex":"@article{Kuhlmann_Houel_Brunner_Ludwig_Reuter_Wieck_Warburton_2013, title={A dark-field microscope for background-free detection of resonance fluorescence from single semiconductor quantum dots operating in a set-and-forget mode}, volume={84}, DOI={10.1063/1.4813879}, number={7073905}, journal={Review of Scientific Instruments}, publisher={AIP Publishing}, author={Kuhlmann, Andreas V. and Houel, Julien and Brunner, Daniel and Ludwig, Arne and Reuter, Dirk and Wieck, Andreas D. and Warburton, Richard J.}, year={2013} }","mla":"Kuhlmann, Andreas V., et al. “A Dark-Field Microscope for Background-Free Detection of Resonance Fluorescence from Single Semiconductor Quantum Dots Operating in a Set-and-Forget Mode.” Review of Scientific Instruments, vol. 84, no. 7, 073905, AIP Publishing, 2013, doi:10.1063/1.4813879.","apa":"Kuhlmann, A. V., Houel, J., Brunner, D., Ludwig, A., Reuter, D., Wieck, A. D., & Warburton, R. J. (2013). A dark-field microscope for background-free detection of resonance fluorescence from single semiconductor quantum dots operating in a set-and-forget mode. Review of Scientific Instruments, 84(7). https://doi.org/10.1063/1.4813879","ama":"Kuhlmann AV, Houel J, Brunner D, et al. A dark-field microscope for background-free detection of resonance fluorescence from single semiconductor quantum dots operating in a set-and-forget mode. Review of Scientific Instruments. 2013;84(7). doi:10.1063/1.4813879","chicago":"Kuhlmann, Andreas V., Julien Houel, Daniel Brunner, Arne Ludwig, Dirk Reuter, Andreas D. Wieck, and Richard J. Warburton. “A Dark-Field Microscope for Background-Free Detection of Resonance Fluorescence from Single Semiconductor Quantum Dots Operating in a Set-and-Forget Mode.” Review of Scientific Instruments 84, no. 7 (2013). https://doi.org/10.1063/1.4813879."},"year":"2013","user_id":"42514","publication":"Review of Scientific Instruments","author":[{"first_name":"Andreas V.","full_name":"Kuhlmann, Andreas V.","last_name":"Kuhlmann"},{"last_name":"Houel","first_name":"Julien","full_name":"Houel, Julien"},{"last_name":"Brunner","full_name":"Brunner, Daniel","first_name":"Daniel"},{"last_name":"Ludwig","full_name":"Ludwig, Arne","first_name":"Arne"},{"full_name":"Reuter, Dirk","first_name":"Dirk","id":"37763","last_name":"Reuter"},{"last_name":"Wieck","first_name":"Andreas D.","full_name":"Wieck, Andreas D."},{"first_name":"Richard J.","full_name":"Warburton, Richard J.","last_name":"Warburton"}],"publisher":"AIP Publishing","date_created":"2019-01-30T13:16:44Z","status":"public","volume":84,"date_updated":"2022-01-06T07:03:31Z","doi":"10.1063/1.4813879","language":[{"iso":"eng"}],"title":"A dark-field microscope for background-free detection of resonance fluorescence from single semiconductor quantum dots operating in a set-and-forget mode","department":[{"_id":"15"},{"_id":"230"}],"publication_status":"published","publication_identifier":{"issn":["0034-6748","1089-7623"]}},{"_id":"7280","date_updated":"2022-01-06T07:03:31Z","doi":"10.1117/12.2023324","language":[{"iso":"eng"}],"year":"2013","citation":{"mla":"Höpfner, Henning, et al. “Spin Injection, Transport, and Relaxation in Spin Light-Emitting Diodes: Magnetic Field Effects.” Spintronics VI, edited by Henri-Jean Drouhin et al., SPIE, 2013, doi:10.1117/12.2023324.","bibtex":"@inproceedings{Höpfner_Fritsche_Ludwig_Ludwig_Stromberg_Wende_Keune_Reuter_Wieck_Gerhardt_et al._2013, title={Spin injection, transport, and relaxation in spin light-emitting diodes: magnetic field effects}, DOI={10.1117/12.2023324}, booktitle={Spintronics VI}, publisher={SPIE}, author={Höpfner, Henning and Fritsche, Carola and Ludwig, Arne and Ludwig, Astrid and Stromberg, Frank and Wende, Heiko and Keune, Werner and Reuter, Dirk and Wieck, Andreas D. and Gerhardt, Nils C. and et al.}, editor={Drouhin, Henri-Jean and Wegrowe, Jean-Eric and Razeghi, ManijehEditors}, year={2013} }","apa":"Höpfner, H., Fritsche, C., Ludwig, A., Ludwig, A., Stromberg, F., Wende, H., … Hofmann, M. R. (2013). Spin injection, transport, and relaxation in spin light-emitting diodes: magnetic field effects. In H.-J. Drouhin, J.-E. Wegrowe, & M. Razeghi (Eds.), Spintronics VI. SPIE. https://doi.org/10.1117/12.2023324","ama":"Höpfner H, Fritsche C, Ludwig A, et al. Spin injection, transport, and relaxation in spin light-emitting diodes: magnetic field effects. In: Drouhin H-J, Wegrowe J-E, Razeghi M, eds. Spintronics VI. SPIE; 2013. doi:10.1117/12.2023324","chicago":"Höpfner, Henning, Carola Fritsche, Arne Ludwig, Astrid Ludwig, Frank Stromberg, Heiko Wende, Werner Keune, et al. “Spin Injection, Transport, and Relaxation in Spin Light-Emitting Diodes: Magnetic Field Effects.” In Spintronics VI, edited by Henri-Jean Drouhin, Jean-Eric Wegrowe, and Manijeh Razeghi. SPIE, 2013. https://doi.org/10.1117/12.2023324.","ieee":"H. Höpfner et al., “Spin injection, transport, and relaxation in spin light-emitting diodes: magnetic field effects,” in Spintronics VI, 2013.","short":"H. Höpfner, C. Fritsche, A. Ludwig, A. Ludwig, F. Stromberg, H. Wende, W. Keune, D. Reuter, A.D. Wieck, N.C. Gerhardt, M.R. Hofmann, in: H.-J. Drouhin, J.-E. Wegrowe, M. Razeghi (Eds.), Spintronics VI, SPIE, 2013."},"type":"conference","user_id":"42514","title":"Spin injection, transport, and relaxation in spin light-emitting diodes: magnetic field effects","publication":"Spintronics VI","department":[{"_id":"15"},{"_id":"230"}],"publisher":"SPIE","author":[{"last_name":"Höpfner","first_name":"Henning","full_name":"Höpfner, Henning"},{"full_name":"Fritsche, Carola","first_name":"Carola","last_name":"Fritsche"},{"full_name":"Ludwig, Arne","first_name":"Arne","last_name":"Ludwig"},{"full_name":"Ludwig, Astrid","first_name":"Astrid","last_name":"Ludwig"},{"last_name":"Stromberg","full_name":"Stromberg, Frank","first_name":"Frank"},{"first_name":"Heiko","full_name":"Wende, Heiko","last_name":"Wende"},{"first_name":"Werner","full_name":"Keune, Werner","last_name":"Keune"},{"full_name":"Reuter, Dirk","first_name":"Dirk","id":"37763","last_name":"Reuter"},{"last_name":"Wieck","full_name":"Wieck, Andreas D.","first_name":"Andreas D."},{"last_name":"Gerhardt","first_name":"Nils C.","full_name":"Gerhardt, Nils C."},{"last_name":"Hofmann","full_name":"Hofmann, Martin R.","first_name":"Martin R."}],"date_created":"2019-01-31T07:53:09Z","status":"public","publication_status":"published","editor":[{"last_name":"Drouhin","first_name":"Henri-Jean","full_name":"Drouhin, Henri-Jean"},{"last_name":"Wegrowe","full_name":"Wegrowe, Jean-Eric","first_name":"Jean-Eric"},{"last_name":"Razeghi","full_name":"Razeghi, Manijeh","first_name":"Manijeh"}]},{"user_id":"42514","volume":10,"status":"public","date_created":"2019-01-31T07:54:12Z","author":[{"last_name":"Höpfner","first_name":"Henning","full_name":"Höpfner, Henning"},{"full_name":"Fritsche, Carola","first_name":"Carola","last_name":"Fritsche"},{"first_name":"Arne","full_name":"Ludwig, Arne","last_name":"Ludwig"},{"last_name":"Ludwig","full_name":"Ludwig, Astrid","first_name":"Astrid"},{"full_name":"Stromberg, Frank","first_name":"Frank","last_name":"Stromberg"},{"last_name":"Wende","full_name":"Wende, Heiko","first_name":"Heiko"},{"full_name":"Keune, Werner","first_name":"Werner","last_name":"Keune"},{"last_name":"Reuter","id":"37763","first_name":"Dirk","full_name":"Reuter, Dirk"},{"first_name":"Andreas D.","full_name":"Wieck, Andreas D.","last_name":"Wieck"},{"full_name":"Gerhardt, Nils C.","first_name":"Nils C.","last_name":"Gerhardt"},{"full_name":"Hofmann, Martin R.","first_name":"Martin R.","last_name":"Hofmann"}],"publisher":"Wiley","publication":"physica status solidi (c)","issue":"9","_id":"7281","intvolume":" 10","citation":{"mla":"Höpfner, Henning, et al. “Spin Relaxation Length in Quantum Dot Spin LEDs.” Physica Status Solidi (C), vol. 10, no. 9, Wiley, 2013, pp. 1214–17, doi:10.1002/pssc.201200689.","bibtex":"@article{Höpfner_Fritsche_Ludwig_Ludwig_Stromberg_Wende_Keune_Reuter_Wieck_Gerhardt_et al._2013, title={Spin relaxation length in quantum dot spin LEDs}, volume={10}, DOI={10.1002/pssc.201200689}, number={9}, journal={physica status solidi (c)}, publisher={Wiley}, author={Höpfner, Henning and Fritsche, Carola and Ludwig, Arne and Ludwig, Astrid and Stromberg, Frank and Wende, Heiko and Keune, Werner and Reuter, Dirk and Wieck, Andreas D. and Gerhardt, Nils C. and et al.}, year={2013}, pages={1214–1217} }","ama":"Höpfner H, Fritsche C, Ludwig A, et al. Spin relaxation length in quantum dot spin LEDs. physica status solidi (c). 2013;10(9):1214-1217. doi:10.1002/pssc.201200689","apa":"Höpfner, H., Fritsche, C., Ludwig, A., Ludwig, A., Stromberg, F., Wende, H., … Hofmann, M. R. (2013). Spin relaxation length in quantum dot spin LEDs. Physica Status Solidi (C), 10(9), 1214–1217. https://doi.org/10.1002/pssc.201200689","chicago":"Höpfner, Henning, Carola Fritsche, Arne Ludwig, Astrid Ludwig, Frank Stromberg, Heiko Wende, Werner Keune, et al. “Spin Relaxation Length in Quantum Dot Spin LEDs.” Physica Status Solidi (C) 10, no. 9 (2013): 1214–17. https://doi.org/10.1002/pssc.201200689.","ieee":"H. Höpfner et al., “Spin relaxation length in quantum dot spin LEDs,” physica status solidi (c), vol. 10, no. 9, pp. 1214–1217, 2013.","short":"H. Höpfner, C. Fritsche, A. Ludwig, A. Ludwig, F. Stromberg, H. Wende, W. Keune, D. Reuter, A.D. Wieck, N.C. Gerhardt, M.R. Hofmann, Physica Status Solidi (C) 10 (2013) 1214–1217."},"type":"journal_article","year":"2013","page":"1214-1217","title":"Spin relaxation length in quantum dot spin LEDs","publication_status":"published","publication_identifier":{"issn":["1862-6351"]},"department":[{"_id":"15"},{"_id":"230"}],"doi":"10.1002/pssc.201200689","date_updated":"2022-01-06T07:03:31Z","language":[{"iso":"eng"}]},{"department":[{"_id":"15"},{"_id":"230"}],"publication_status":"published","publication_identifier":{"issn":["0268-1242","1361-6641"]},"title":"Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures","language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:03:31Z","doi":"10.1088/0268-1242/28/8/085012","publication":"Semiconductor Science and Technology","publisher":"IOP Publishing","author":[{"first_name":"J","full_name":"Schuster, J","last_name":"Schuster"},{"first_name":"T Y","full_name":"Kim, T Y","last_name":"Kim"},{"last_name":"Batke","full_name":"Batke, E","first_name":"E"},{"first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763"},{"last_name":"Wieck","full_name":"Wieck, A D","first_name":"A D"}],"volume":28,"date_created":"2019-01-31T08:01:35Z","status":"public","user_id":"42514","year":"2013","type":"journal_article","citation":{"ieee":"J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures,” Semiconductor Science and Technology, vol. 28, no. 8, 2013.","short":"J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology 28 (2013).","bibtex":"@article{Schuster_Kim_Batke_Reuter_Wieck_2013, title={Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures}, volume={28}, DOI={10.1088/0268-1242/28/8/085012}, number={8085012}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Schuster, J and Kim, T Y and Batke, E and Reuter, Dirk and Wieck, A D}, year={2013} }","mla":"Schuster, J., et al. “Influence of Recombination Center Interaction on the Photoluminescence of AlGaAs/GaAs Heterostructures.” Semiconductor Science and Technology, vol. 28, no. 8, 085012, IOP Publishing, 2013, doi:10.1088/0268-1242/28/8/085012.","apa":"Schuster, J., Kim, T. Y., Batke, E., Reuter, D., & Wieck, A. D. (2013). Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures. Semiconductor Science and Technology, 28(8). https://doi.org/10.1088/0268-1242/28/8/085012","ama":"Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures. Semiconductor Science and Technology. 2013;28(8). doi:10.1088/0268-1242/28/8/085012","chicago":"Schuster, J, T Y Kim, E Batke, Dirk Reuter, and A D Wieck. “Influence of Recombination Center Interaction on the Photoluminescence of AlGaAs/GaAs Heterostructures.” Semiconductor Science and Technology 28, no. 8 (2013). https://doi.org/10.1088/0268-1242/28/8/085012."},"intvolume":" 28","_id":"7282","article_number":"085012","issue":"8"},{"intvolume":" 87","_id":"7284","date_updated":"2022-01-06T07:03:32Z","doi":"10.1103/physrevb.87.235320","issue":"23","citation":{"mla":"Kuznetsova, M. S., et al. “Hanle Effect in (In,Ga)As Quantum Dots: Role of Nuclear Spin Fluctuations.” Physical Review B, vol. 87, no. 23, American Physical Society (APS), 2013, doi:10.1103/physrevb.87.235320.","bibtex":"@article{Kuznetsova_Flisinski_Gerlovin_Ignatiev_Kavokin_Verbin_Yakovlev_Reuter_Wieck_Bayer_2013, title={Hanle effect in (In,Ga)As quantum dots: Role of nuclear spin fluctuations}, volume={87}, DOI={10.1103/physrevb.87.235320}, number={23}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Kuznetsova, M. S. and Flisinski, K. and Gerlovin, I. Ya. and Ignatiev, I. V. and Kavokin, K. V. and Verbin, S. Yu. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Bayer, M.}, year={2013} }","apa":"Kuznetsova, M. S., Flisinski, K., Gerlovin, I. Y., Ignatiev, I. V., Kavokin, K. V., Verbin, S. Y., … Bayer, M. (2013). Hanle effect in (In,Ga)As quantum dots: Role of nuclear spin fluctuations. Physical Review B, 87(23). https://doi.org/10.1103/physrevb.87.235320","ama":"Kuznetsova MS, Flisinski K, Gerlovin IY, et al. Hanle effect in (In,Ga)As quantum dots: Role of nuclear spin fluctuations. Physical Review B. 2013;87(23). doi:10.1103/physrevb.87.235320","chicago":"Kuznetsova, M. S., K. Flisinski, I. Ya. Gerlovin, I. V. Ignatiev, K. V. Kavokin, S. Yu. Verbin, D. R. Yakovlev, Dirk Reuter, A. D. Wieck, and M. Bayer. “Hanle Effect in (In,Ga)As Quantum Dots: Role of Nuclear Spin Fluctuations.” Physical Review B 87, no. 23 (2013). https://doi.org/10.1103/physrevb.87.235320.","ieee":"M. S. Kuznetsova et al., “Hanle effect in (In,Ga)As quantum dots: Role of nuclear spin fluctuations,” Physical Review B, vol. 87, no. 23, 2013.","short":"M.S. Kuznetsova, K. Flisinski, I.Y. Gerlovin, I.V. Ignatiev, K.V. Kavokin, S.Y. Verbin, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physical Review B 87 (2013)."},"type":"journal_article","year":"2013","language":[{"iso":"eng"}],"title":"Hanle effect in (In,Ga)As quantum dots: Role of nuclear spin fluctuations","user_id":"42514","publication":"Physical Review B","department":[{"_id":"15"},{"_id":"230"}],"publisher":"American Physical Society (APS)","author":[{"full_name":"Kuznetsova, M. S.","first_name":"M. S.","last_name":"Kuznetsova"},{"full_name":"Flisinski, K.","first_name":"K.","last_name":"Flisinski"},{"last_name":"Gerlovin","first_name":"I. Ya.","full_name":"Gerlovin, I. Ya."},{"last_name":"Ignatiev","first_name":"I. V.","full_name":"Ignatiev, I. V."},{"first_name":"K. V.","full_name":"Kavokin, K. V.","last_name":"Kavokin"},{"last_name":"Verbin","full_name":"Verbin, S. Yu.","first_name":"S. Yu."},{"last_name":"Yakovlev","full_name":"Yakovlev, D. R.","first_name":"D. R."},{"id":"37763","last_name":"Reuter","full_name":"Reuter, Dirk","first_name":"Dirk"},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."},{"first_name":"M.","full_name":"Bayer, M.","last_name":"Bayer"}],"publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","volume":87,"date_created":"2019-01-31T08:39:43Z","status":"public"},{"year":"2013","citation":{"short":"Y. Komijani, M. Csontos, T. Ihn, K. Ensslin, Y. Meir, D. Reuter, A.D. Wieck, Physical Review B 87 (2013).","ieee":"Y. Komijani et al., “Origins of conductance anomalies in ap-type GaAs quantum point contact,” Physical Review B, vol. 87, no. 24, 2013.","chicago":"Komijani, Y., M. Csontos, T. Ihn, K. Ensslin, Y. Meir, Dirk Reuter, and A. D. Wieck. “Origins of Conductance Anomalies in Ap-Type GaAs Quantum Point Contact.” Physical Review B 87, no. 24 (2013). https://doi.org/10.1103/physrevb.87.245406.","apa":"Komijani, Y., Csontos, M., Ihn, T., Ensslin, K., Meir, Y., Reuter, D., & Wieck, A. D. (2013). Origins of conductance anomalies in ap-type GaAs quantum point contact. Physical Review B, 87(24). https://doi.org/10.1103/physrevb.87.245406","ama":"Komijani Y, Csontos M, Ihn T, et al. Origins of conductance anomalies in ap-type GaAs quantum point contact. Physical Review B. 2013;87(24). doi:10.1103/physrevb.87.245406","mla":"Komijani, Y., et al. “Origins of Conductance Anomalies in Ap-Type GaAs Quantum Point Contact.” Physical Review B, vol. 87, no. 24, American Physical Society (APS), 2013, doi:10.1103/physrevb.87.245406.","bibtex":"@article{Komijani_Csontos_Ihn_Ensslin_Meir_Reuter_Wieck_2013, title={Origins of conductance anomalies in ap-type GaAs quantum point contact}, volume={87}, DOI={10.1103/physrevb.87.245406}, number={24}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Komijani, Y. and Csontos, M. and Ihn, T. and Ensslin, K. and Meir, Y. and Reuter, Dirk and Wieck, A. D.}, year={2013} }"},"type":"journal_article","language":[{"iso":"eng"}],"_id":"7285","intvolume":" 87","date_updated":"2022-01-06T07:03:32Z","doi":"10.1103/physrevb.87.245406","issue":"24","publisher":"American Physical Society (APS)","author":[{"last_name":"Komijani","first_name":"Y.","full_name":"Komijani, Y."},{"full_name":"Csontos, M.","first_name":"M.","last_name":"Csontos"},{"first_name":"T.","full_name":"Ihn, T.","last_name":"Ihn"},{"first_name":"K.","full_name":"Ensslin, K.","last_name":"Ensslin"},{"last_name":"Meir","first_name":"Y.","full_name":"Meir, Y."},{"full_name":"Reuter, Dirk","first_name":"Dirk","id":"37763","last_name":"Reuter"},{"last_name":"Wieck","full_name":"Wieck, A. D.","first_name":"A. D."}],"publication":"Physical Review B","department":[{"_id":"15"},{"_id":"230"}],"publication_status":"published","volume":87,"publication_identifier":{"issn":["1098-0121","1550-235X"]},"status":"public","date_created":"2019-01-31T08:43:51Z","title":"Origins of conductance anomalies in ap-type GaAs quantum point contact","user_id":"42514"},{"date_updated":"2022-01-06T07:03:32Z","doi":"10.1107/s0021889813004226","language":[{"iso":"eng"}],"title":"Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams","department":[{"_id":"15"},{"_id":"230"}],"publication_identifier":{"issn":["0021-8898"]},"publication_status":"published","intvolume":" 46","_id":"7286","issue":"4","year":"2013","citation":{"short":"G. Bussone, R. Schott, A. Biermanns, A. Davydok, D. Reuter, G. Carbone, T.U. Schülli, A.D. Wieck, U. Pietsch, Journal of Applied Crystallography 46 (2013) 887–892.","ieee":"G. Bussone et al., “Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams,” Journal of Applied Crystallography, vol. 46, no. 4, pp. 887–892, 2013.","chicago":"Bussone, Genziana, Rüdiger Schott, Andreas Biermanns, Anton Davydok, Dirk Reuter, Gerardina Carbone, Tobias U. Schülli, Andreas D. Wieck, and Ullrich Pietsch. “Grazing-Incidence X-Ray Diffraction of Single GaAs Nanowires at Locations Defined by Focused Ion Beams.” Journal of Applied Crystallography 46, no. 4 (2013): 887–92. https://doi.org/10.1107/s0021889813004226.","ama":"Bussone G, Schott R, Biermanns A, et al. Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams. Journal of Applied Crystallography. 2013;46(4):887-892. doi:10.1107/s0021889813004226","apa":"Bussone, G., Schott, R., Biermanns, A., Davydok, A., Reuter, D., Carbone, G., … Pietsch, U. (2013). Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams. Journal of Applied Crystallography, 46(4), 887–892. https://doi.org/10.1107/s0021889813004226","mla":"Bussone, Genziana, et al. “Grazing-Incidence X-Ray Diffraction of Single GaAs Nanowires at Locations Defined by Focused Ion Beams.” Journal of Applied Crystallography, vol. 46, no. 4, International Union of Crystallography (IUCr), 2013, pp. 887–92, doi:10.1107/s0021889813004226.","bibtex":"@article{Bussone_Schott_Biermanns_Davydok_Reuter_Carbone_Schülli_Wieck_Pietsch_2013, title={Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams}, volume={46}, DOI={10.1107/s0021889813004226}, number={4}, journal={Journal of Applied Crystallography}, publisher={International Union of Crystallography (IUCr)}, author={Bussone, Genziana and Schott, Rüdiger and Biermanns, Andreas and Davydok, Anton and Reuter, Dirk and Carbone, Gerardina and Schülli, Tobias U. and Wieck, Andreas D. and Pietsch, Ullrich}, year={2013}, pages={887–892} }"},"type":"journal_article","page":"887-892","user_id":"42514","author":[{"last_name":"Bussone","first_name":"Genziana","full_name":"Bussone, Genziana"},{"first_name":"Rüdiger","full_name":"Schott, Rüdiger","last_name":"Schott"},{"full_name":"Biermanns, Andreas","first_name":"Andreas","last_name":"Biermanns"},{"last_name":"Davydok","first_name":"Anton","full_name":"Davydok, Anton"},{"full_name":"Reuter, Dirk","first_name":"Dirk","id":"37763","last_name":"Reuter"},{"first_name":"Gerardina","full_name":"Carbone, Gerardina","last_name":"Carbone"},{"first_name":"Tobias U.","full_name":"Schülli, Tobias U.","last_name":"Schülli"},{"last_name":"Wieck","full_name":"Wieck, Andreas D.","first_name":"Andreas D."},{"first_name":"Ullrich","full_name":"Pietsch, Ullrich","last_name":"Pietsch"}],"publisher":"International Union of Crystallography (IUCr)","publication":"Journal of Applied Crystallography","volume":46,"status":"public","date_created":"2019-01-31T08:45:31Z"},{"language":[{"iso":"eng"}],"year":"2013","type":"journal_article","citation":{"bibtex":"@article{Wang_Chen_Klochan_Das Gupta_Reuter_Wieck_Ritchie_Hamilton_2013, title={Influence of surface states on quantum and transport lifetimes in high-quality undoped heterostructures}, volume={87}, DOI={10.1103/physrevb.87.195313}, number={19}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Wang, D. Q. and Chen, J. C. H. and Klochan, O. and Das Gupta, K. and Reuter, Dirk and Wieck, A. D. and Ritchie, D. A. and Hamilton, A. R.}, year={2013} }","mla":"Wang, D. Q., et al. “Influence of Surface States on Quantum and Transport Lifetimes in High-Quality Undoped Heterostructures.” Physical Review B, vol. 87, no. 19, American Physical Society (APS), 2013, doi:10.1103/physrevb.87.195313.","chicago":"Wang, D. Q., J. C. H. Chen, O. Klochan, K. Das Gupta, Dirk Reuter, A. D. Wieck, D. A. Ritchie, and A. R. Hamilton. “Influence of Surface States on Quantum and Transport Lifetimes in High-Quality Undoped Heterostructures.” Physical Review B 87, no. 19 (2013). https://doi.org/10.1103/physrevb.87.195313.","ama":"Wang DQ, Chen JCH, Klochan O, et al. Influence of surface states on quantum and transport lifetimes in high-quality undoped heterostructures. Physical Review B. 2013;87(19). doi:10.1103/physrevb.87.195313","apa":"Wang, D. Q., Chen, J. C. H., Klochan, O., Das Gupta, K., Reuter, D., Wieck, A. D., … Hamilton, A. R. (2013). Influence of surface states on quantum and transport lifetimes in high-quality undoped heterostructures. Physical Review B, 87(19). https://doi.org/10.1103/physrevb.87.195313","ieee":"D. Q. Wang et al., “Influence of surface states on quantum and transport lifetimes in high-quality undoped heterostructures,” Physical Review B, vol. 87, no. 19, 2013.","short":"D.Q. Wang, J.C.H. Chen, O. Klochan, K. Das Gupta, D. Reuter, A.D. Wieck, D.A. Ritchie, A.R. Hamilton, Physical Review B 87 (2013)."},"_id":"7287","date_updated":"2022-01-06T07:03:32Z","intvolume":" 87","issue":"19","doi":"10.1103/physrevb.87.195313","publisher":"American Physical Society (APS)","author":[{"full_name":"Wang, D. Q.","first_name":"D. Q.","last_name":"Wang"},{"last_name":"Chen","full_name":"Chen, J. C. H.","first_name":"J. C. H."},{"last_name":"Klochan","first_name":"O.","full_name":"Klochan, O."},{"first_name":"K.","full_name":"Das Gupta, K.","last_name":"Das Gupta"},{"id":"37763","last_name":"Reuter","full_name":"Reuter, Dirk","first_name":"Dirk"},{"first_name":"A. D.","full_name":"Wieck, A. D.","last_name":"Wieck"},{"first_name":"D. A.","full_name":"Ritchie, D. A.","last_name":"Ritchie"},{"full_name":"Hamilton, A. R.","first_name":"A. R.","last_name":"Hamilton"}],"publication":"Physical Review B","department":[{"_id":"15"},{"_id":"230"}],"status":"public","date_created":"2019-01-31T08:46:35Z","publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"volume":87,"user_id":"42514","title":"Influence of surface states on quantum and transport lifetimes in high-quality undoped heterostructures"}]