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Structural, optical, and magnetic properties of Ho-implanted GaN thin films. <i>Journal of Physics: Conference Series</i>. 2011;266. doi:<a href=\"https://doi.org/10.1088/1742-6596/266/1/012097\">10.1088/1742-6596/266/1/012097</a>"},"publication":"Journal of Physics: Conference Series","date_created":"2019-02-14T10:38:13Z","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article"},{"publisher":"AIP","_id":"7716","language":[{"iso":"eng"}],"doi":"10.1063/1.3666392","user_id":"42514","author":[{"full_name":"Cerchez, M.","last_name":"Cerchez","first_name":"M."},{"first_name":"A.","last_name":"Tarasov","full_name":"Tarasov, A."},{"last_name":"Hugger","first_name":"S.","full_name":"Hugger, S."},{"first_name":"Hengyi","last_name":"Xu","full_name":"Xu, Hengyi"},{"full_name":"Heinzel, T.","last_name":"Heinzel","first_name":"T."},{"full_name":"Zozoulenko, I. V.","first_name":"I. V.","last_name":"Zozoulenko"},{"full_name":"Gasser-Szerer, U.","first_name":"U.","last_name":"Gasser-Szerer"},{"id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter"},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."},{"full_name":"Ihm, Jisoon","last_name":"Ihm","first_name":"Jisoon"},{"full_name":"Cheong, Hyeonsik","last_name":"Cheong","first_name":"Hyeonsik"}],"status":"public","title":"Towards the quantized magnetic confinement in quantum wires","year":"2011","date_updated":"2022-01-06T07:03:45Z","publication_status":"published","date_created":"2019-02-14T10:39:07Z","department":[{"_id":"15"},{"_id":"230"}],"type":"conference","citation":{"chicago":"Cerchez, M., A. Tarasov, S. Hugger, Hengyi Xu, T. Heinzel, I. V. Zozoulenko, U. Gasser-Szerer, et al. “Towards the Quantized Magnetic Confinement in Quantum Wires.” AIP, 2011. <a href=\"https://doi.org/10.1063/1.3666392\">https://doi.org/10.1063/1.3666392</a>.","short":"M. Cerchez, A. Tarasov, S. Hugger, H. Xu, T. Heinzel, I.V. Zozoulenko, U. Gasser-Szerer, D. Reuter, A.D. Wieck, J. Ihm, H. Cheong, in: AIP, 2011.","apa":"Cerchez, M., Tarasov, A., Hugger, S., Xu, H., Heinzel, T., Zozoulenko, I. V., … Cheong, H. (2011). Towards the quantized magnetic confinement in quantum wires. AIP. <a href=\"https://doi.org/10.1063/1.3666392\">https://doi.org/10.1063/1.3666392</a>","ieee":"M. Cerchez <i>et al.</i>, “Towards the quantized magnetic confinement in quantum wires,” 2011.","ama":"Cerchez M, Tarasov A, Hugger S, et al. Towards the quantized magnetic confinement in quantum wires. In: AIP; 2011. doi:<a href=\"https://doi.org/10.1063/1.3666392\">10.1063/1.3666392</a>","bibtex":"@inproceedings{Cerchez_Tarasov_Hugger_Xu_Heinzel_Zozoulenko_Gasser-Szerer_Reuter_Wieck_Ihm_et al._2011, title={Towards the quantized magnetic confinement in quantum wires}, DOI={<a href=\"https://doi.org/10.1063/1.3666392\">10.1063/1.3666392</a>}, publisher={AIP}, author={Cerchez, M. and Tarasov, A. and Hugger, S. and Xu, Hengyi and Heinzel, T. and Zozoulenko, I. V. and Gasser-Szerer, U. and Reuter, Dirk and Wieck, A. D. and Ihm, Jisoon and et al.}, year={2011} }","mla":"Cerchez, M., et al. <i>Towards the Quantized Magnetic Confinement in Quantum Wires</i>. AIP, 2011, doi:<a href=\"https://doi.org/10.1063/1.3666392\">10.1063/1.3666392</a>."}},{"publication_status":"published","date_updated":"2022-01-06T07:03:45Z","year":"2011","status":"public","title":"All-electrical transport spectroscopy of non-equilibrium many-particle states in self-assembled quantum dots","author":[{"full_name":"Marquardt, Bastian","first_name":"Bastian","last_name":"Marquardt"},{"first_name":"Martin","last_name":"Geller","full_name":"Geller, Martin"},{"full_name":"Baxevanis, Benjamin","first_name":"Benjamin","last_name":"Baxevanis"},{"full_name":"Pfannkuche, Daniela","first_name":"Daniela","last_name":"Pfannkuche"},{"full_name":"Wieck, Andreas D.","last_name":"Wieck","first_name":"Andreas D."},{"full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk","id":"37763"},{"full_name":"Lorke, Axel","first_name":"Axel","last_name":"Lorke"},{"first_name":"Jisoon","last_name":"Ihm","full_name":"Ihm, Jisoon"},{"full_name":"Cheong, Hyeonsik","first_name":"Hyeonsik","last_name":"Cheong"}],"user_id":"42514","doi":"10.1063/1.3666398","language":[{"iso":"eng"}],"_id":"7717","publisher":"AIP","citation":{"ieee":"B. Marquardt <i>et al.</i>, “All-electrical transport spectroscopy of non-equilibrium many-particle states in self-assembled quantum dots,” 2011.","apa":"Marquardt, B., Geller, M., Baxevanis, B., Pfannkuche, D., Wieck, A. D., Reuter, D., … Cheong, H. (2011). All-electrical transport spectroscopy of non-equilibrium many-particle states in self-assembled quantum dots. AIP. <a href=\"https://doi.org/10.1063/1.3666398\">https://doi.org/10.1063/1.3666398</a>","short":"B. Marquardt, M. Geller, B. Baxevanis, D. Pfannkuche, A.D. Wieck, D. Reuter, A. Lorke, J. Ihm, H. Cheong, in: AIP, 2011.","chicago":"Marquardt, Bastian, Martin Geller, Benjamin Baxevanis, Daniela Pfannkuche, Andreas D. Wieck, Dirk Reuter, Axel Lorke, Jisoon Ihm, and Hyeonsik Cheong. “All-Electrical Transport Spectroscopy of Non-Equilibrium Many-Particle States in Self-Assembled Quantum Dots.” AIP, 2011. <a href=\"https://doi.org/10.1063/1.3666398\">https://doi.org/10.1063/1.3666398</a>.","mla":"Marquardt, Bastian, et al. <i>All-Electrical Transport Spectroscopy of Non-Equilibrium Many-Particle States in Self-Assembled Quantum Dots</i>. AIP, 2011, doi:<a href=\"https://doi.org/10.1063/1.3666398\">10.1063/1.3666398</a>.","bibtex":"@inproceedings{Marquardt_Geller_Baxevanis_Pfannkuche_Wieck_Reuter_Lorke_Ihm_Cheong_2011, title={All-electrical transport spectroscopy of non-equilibrium many-particle states in self-assembled quantum dots}, DOI={<a href=\"https://doi.org/10.1063/1.3666398\">10.1063/1.3666398</a>}, publisher={AIP}, author={Marquardt, Bastian and Geller, Martin and Baxevanis, Benjamin and Pfannkuche, Daniela and Wieck, Andreas D. and Reuter, Dirk and Lorke, Axel and Ihm, Jisoon and Cheong, Hyeonsik}, year={2011} }","ama":"Marquardt B, Geller M, Baxevanis B, et al. All-electrical transport spectroscopy of non-equilibrium many-particle states in self-assembled quantum dots. In: AIP; 2011. doi:<a href=\"https://doi.org/10.1063/1.3666398\">10.1063/1.3666398</a>"},"type":"conference","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-02-14T10:40:14Z"},{"date_created":"2019-02-14T10:40:59Z","department":[{"_id":"15"},{"_id":"230"}],"type":"conference","citation":{"chicago":"Wal, C. H. van der, M. Sladkov, A. U. Chaubal, M. P. Bakker, A. R. Onur, Dirk Reuter, A. D. Wieck, Jisoon Ihm, and Hyeonsik Cheong. “Electromagnetically Induced Transparency in Low-Doped n-GaAs.” AIP, 2011. <a href=\"https://doi.org/10.1063/1.3666734\">https://doi.org/10.1063/1.3666734</a>.","short":"C.H. van der Wal, M. Sladkov, A.U. Chaubal, M.P. Bakker, A.R. Onur, D. Reuter, A.D. Wieck, J. Ihm, H. Cheong, in: AIP, 2011.","ieee":"C. H. van der Wal <i>et al.</i>, “Electromagnetically induced transparency in low-doped n-GaAs,” 2011.","apa":"van der Wal, C. H., Sladkov, M., Chaubal, A. U., Bakker, M. P., Onur, A. R., Reuter, D., … Cheong, H. (2011). Electromagnetically induced transparency in low-doped n-GaAs. AIP. <a href=\"https://doi.org/10.1063/1.3666734\">https://doi.org/10.1063/1.3666734</a>","bibtex":"@inproceedings{van der Wal_Sladkov_Chaubal_Bakker_Onur_Reuter_Wieck_Ihm_Cheong_2011, title={Electromagnetically induced transparency in low-doped n-GaAs}, DOI={<a href=\"https://doi.org/10.1063/1.3666734\">10.1063/1.3666734</a>}, publisher={AIP}, author={van der Wal, C. H. and Sladkov, M. and Chaubal, A. U. and Bakker, M. P. and Onur, A. R. and Reuter, Dirk and Wieck, A. D. and Ihm, Jisoon and Cheong, Hyeonsik}, year={2011} }","ama":"van der Wal CH, Sladkov M, Chaubal AU, et al. Electromagnetically induced transparency in low-doped n-GaAs. In: AIP; 2011. doi:<a href=\"https://doi.org/10.1063/1.3666734\">10.1063/1.3666734</a>","mla":"van der Wal, C. H., et al. <i>Electromagnetically Induced Transparency in Low-Doped n-GaAs</i>. AIP, 2011, doi:<a href=\"https://doi.org/10.1063/1.3666734\">10.1063/1.3666734</a>."},"_id":"7718","language":[{"iso":"eng"}],"publisher":"AIP","doi":"10.1063/1.3666734","user_id":"42514","author":[{"first_name":"C. H.","last_name":"van der Wal","full_name":"van der Wal, C. H."},{"full_name":"Sladkov, M.","last_name":"Sladkov","first_name":"M."},{"last_name":"Chaubal","first_name":"A. U.","full_name":"Chaubal, A. U."},{"full_name":"Bakker, M. P.","first_name":"M. P.","last_name":"Bakker"},{"full_name":"Onur, A. R.","last_name":"Onur","first_name":"A. R."},{"id":"37763","last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk"},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."},{"full_name":"Ihm, Jisoon","last_name":"Ihm","first_name":"Jisoon"},{"full_name":"Cheong, Hyeonsik","first_name":"Hyeonsik","last_name":"Cheong"}],"status":"public","title":"Electromagnetically induced transparency in low-doped n-GaAs","year":"2011","date_updated":"2022-01-06T07:03:45Z","publication_status":"published"},{"citation":{"mla":"Chen, Y. S., et al. “Manipulation of Nuclear Spin Dynamics in N-GaAs Using an on-Chip Microcoil.” <i>Journal of Applied Physics</i>, vol. 109, no. 1, 016106, AIP Publishing, 2011, doi:<a href=\"https://doi.org/10.1063/1.3530731\">10.1063/1.3530731</a>.","ama":"Chen YS, Huang J, Ludwig A, Reuter D, Wieck AD, Bacher G. Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil. <i>Journal of Applied Physics</i>. 2011;109(1). doi:<a href=\"https://doi.org/10.1063/1.3530731\">10.1063/1.3530731</a>","bibtex":"@article{Chen_Huang_Ludwig_Reuter_Wieck_Bacher_2011, title={Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil}, volume={109}, DOI={<a href=\"https://doi.org/10.1063/1.3530731\">10.1063/1.3530731</a>}, number={1016106}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Chen, Y. S. and Huang, J. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Bacher, G.}, year={2011} }","apa":"Chen, Y. S., Huang, J., Ludwig, A., Reuter, D., Wieck, A. D., &#38; Bacher, G. (2011). Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil. <i>Journal of Applied Physics</i>, <i>109</i>(1). <a href=\"https://doi.org/10.1063/1.3530731\">https://doi.org/10.1063/1.3530731</a>","ieee":"Y. S. Chen, J. Huang, A. Ludwig, D. Reuter, A. D. Wieck, and G. Bacher, “Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil,” <i>Journal of Applied Physics</i>, vol. 109, no. 1, 2011.","short":"Y.S. Chen, J. Huang, A. Ludwig, D. Reuter, A.D. Wieck, G. Bacher, Journal of Applied Physics 109 (2011).","chicago":"Chen, Y. S., J. Huang, A. Ludwig, Dirk Reuter, A. D. Wieck, and G. Bacher. “Manipulation of Nuclear Spin Dynamics in N-GaAs Using an on-Chip Microcoil.” <i>Journal of Applied Physics</i> 109, no. 1 (2011). <a href=\"https://doi.org/10.1063/1.3530731\">https://doi.org/10.1063/1.3530731</a>."},"status":"public","_id":"7719","publisher":"AIP Publishing","volume":109,"user_id":"42514","issue":"1","publication":"Journal of Applied Physics","date_created":"2019-02-14T10:41:44Z","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","publication_identifier":{"issn":["0021-8979","1089-7550"]},"author":[{"last_name":"Chen","first_name":"Y. S.","full_name":"Chen, Y. S."},{"last_name":"Huang","first_name":"J.","full_name":"Huang, J."},{"first_name":"A.","last_name":"Ludwig","full_name":"Ludwig, A."},{"full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk","id":"37763"},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."},{"full_name":"Bacher, G.","first_name":"G.","last_name":"Bacher"}],"year":"2011","title":"Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil","intvolume":"       109","publication_status":"published","date_updated":"2022-01-06T07:03:45Z","language":[{"iso":"eng"}],"article_number":"016106","doi":"10.1063/1.3530731"},{"citation":{"bibtex":"@article{Sanna_Berth_Hahn_Widhalm_Zrenner_Schmidt_2011, title={Vibrational properties of the LiNbO3 z-surfaces}, volume={58}, DOI={<a href=\"https://doi.org/10.1109/tuffc.2011.2012\">10.1109/tuffc.2011.2012</a>}, number={9}, journal={IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Sanna, S. and Berth, Gerhard and Hahn, W. and Widhalm, A. and Zrenner, Artur and Schmidt, W. G.}, year={2011}, pages={1751–1756} }","ama":"Sanna S, Berth G, Hahn W, Widhalm A, Zrenner A, Schmidt WG. Vibrational properties of the LiNbO3 z-surfaces. <i>IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control</i>. 2011;58(9):1751-1756. doi:<a href=\"https://doi.org/10.1109/tuffc.2011.2012\">10.1109/tuffc.2011.2012</a>","mla":"Sanna, S., et al. “Vibrational Properties of the LiNbO3 Z-Surfaces.” <i>IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control</i>, vol. 58, no. 9, Institute of Electrical and Electronics Engineers (IEEE), 2011, pp. 1751–56, doi:<a href=\"https://doi.org/10.1109/tuffc.2011.2012\">10.1109/tuffc.2011.2012</a>.","short":"S. Sanna, G. Berth, W. Hahn, A. Widhalm, A. Zrenner, W.G. Schmidt, IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control 58 (2011) 1751–1756.","chicago":"Sanna, S., Gerhard Berth, W. Hahn, A. Widhalm, Artur Zrenner, and W. G. Schmidt. “Vibrational Properties of the LiNbO3 Z-Surfaces.” <i>IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control</i> 58, no. 9 (2011): 1751–56. <a href=\"https://doi.org/10.1109/tuffc.2011.2012\">https://doi.org/10.1109/tuffc.2011.2012</a>.","ieee":"S. Sanna, G. Berth, W. Hahn, A. Widhalm, A. Zrenner, and W. G. Schmidt, “Vibrational properties of the LiNbO3 z-surfaces,” <i>IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control</i>, vol. 58, no. 9, pp. 1751–1756, 2011.","apa":"Sanna, S., Berth, G., Hahn, W., Widhalm, A., Zrenner, A., &#38; Schmidt, W. G. (2011). Vibrational properties of the LiNbO3 z-surfaces. <i>IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control</i>, <i>58</i>(9), 1751–1756. <a href=\"https://doi.org/10.1109/tuffc.2011.2012\">https://doi.org/10.1109/tuffc.2011.2012</a>"},"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","_id":"4544","page":"1751-1756","volume":58,"user_id":"49428","status":"public","date_created":"2018-09-20T11:33:31Z","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"type":"journal_article","issue":"9","publication":"IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control","abstract":[{"lang":"eng","text":"The existence of localized vibrational modes both at the positive and at the negative LiNbO3 (0001) surface is demonstrated by means of first-principles calculations and Raman spectroscopy measurements. First, the phonon modes of the crystal bulk and of the (0001) surface are calculated within the density functional theory. In a second step, the Raman spectra of LiNbO3 bulk and of the two surfaces are measured. The phonon modes localized at the two surfaces are found to be substantially different, and are also found to differ from the bulk modes. The calculated and measured frequencies are in agreement within the error of the method. Raman spectroscopy is shown to be sensitive to differences between bulk and surface and between positive and negative surface. It represents therefore an alternative method to determine the surface polarity, which does not exploit the pyroelectric or piezoelectric properties of the material."}],"language":[{"iso":"eng"}],"doi":"10.1109/tuffc.2011.2012","author":[{"full_name":"Sanna, S.","first_name":"S.","last_name":"Sanna"},{"full_name":"Berth, Gerhard","first_name":"Gerhard","last_name":"Berth","id":"53"},{"full_name":"Hahn, W.","last_name":"Hahn","first_name":"W."},{"first_name":"A.","last_name":"Widhalm","full_name":"Widhalm, A."},{"id":"606","full_name":"Zrenner, Artur","first_name":"Artur","orcid":"0000-0002-5190-0944","last_name":"Zrenner"},{"full_name":"Schmidt, W. G.","last_name":"Schmidt","first_name":"W. G."}],"publication_identifier":{"issn":["0885-3010"]},"year":"2011","title":"Vibrational properties of the LiNbO3 z-surfaces","intvolume":"        58","article_type":"original","date_updated":"2022-01-06T07:01:09Z","publication_status":"published"},{"citation":{"apa":"Wiedemeier, V., Berth, G., Zrenner, A., Larramendi, E. M., Woggon, U., Lischka, K., &#38; Schikora, D. (2011). In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy. <i>Semiconductor Science and Technology</i>, <i>26</i>(10). <a href=\"https://doi.org/10.1088/0268-1242/26/10/105023\">https://doi.org/10.1088/0268-1242/26/10/105023</a>","ieee":"V. Wiedemeier <i>et al.</i>, “In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy,” <i>Semiconductor Science and Technology</i>, vol. 26, no. 10, 2011.","chicago":"Wiedemeier, V, Gerhard Berth, Artur Zrenner, E M Larramendi, U Woggon, K Lischka, and D Schikora. “In Situ Characterization of ZnTe Epilayer Irradiation via Time-Resolved and Power-Density-Dependent Raman Spectroscopy.” <i>Semiconductor Science and Technology</i> 26, no. 10 (2011). <a href=\"https://doi.org/10.1088/0268-1242/26/10/105023\">https://doi.org/10.1088/0268-1242/26/10/105023</a>.","short":"V. Wiedemeier, G. Berth, A. Zrenner, E.M. Larramendi, U. Woggon, K. Lischka, D. Schikora, Semiconductor Science and Technology 26 (2011).","mla":"Wiedemeier, V., et al. “In Situ Characterization of ZnTe Epilayer Irradiation via Time-Resolved and Power-Density-Dependent Raman Spectroscopy.” <i>Semiconductor Science and Technology</i>, vol. 26, no. 10, 105023, IOP Publishing, 2011, doi:<a href=\"https://doi.org/10.1088/0268-1242/26/10/105023\">10.1088/0268-1242/26/10/105023</a>.","ama":"Wiedemeier V, Berth G, Zrenner A, et al. In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy. <i>Semiconductor Science and Technology</i>. 2011;26(10). doi:<a href=\"https://doi.org/10.1088/0268-1242/26/10/105023\">10.1088/0268-1242/26/10/105023</a>","bibtex":"@article{Wiedemeier_Berth_Zrenner_Larramendi_Woggon_Lischka_Schikora_2011, title={In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy}, volume={26}, DOI={<a href=\"https://doi.org/10.1088/0268-1242/26/10/105023\">10.1088/0268-1242/26/10/105023</a>}, number={10105023}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Wiedemeier, V and Berth, Gerhard and Zrenner, Artur and Larramendi, E M and Woggon, U and Lischka, K and Schikora, D}, year={2011} }"},"_id":"4545","publisher":"IOP Publishing","user_id":"49428","volume":26,"status":"public","date_created":"2018-09-20T11:36:28Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"issue":"10","publication":"Semiconductor Science and Technology","abstract":[{"lang":"eng","text":"Laser irradiation damage in ZnTe epilayers was analyzed in situ by power-density-dependent and time-resolved micro-Raman spectroscopy. Damage by ablation or compound decomposition on the sample surface was revealed by the decrease of the ZnTe–nLO mode intensity with the increase of laser power density. The appearance of the peaks associated with the stronger crystalline-tellurium modes, tellurium aggregates and second-order Raman scattering at room temperature μ-Raman spectra was observed for higher power densities than 4.4 × 105 W cm−2. The Raman signal time transients of ZnTe–nLO and crystalline-tellurium modes reveal an exponential evolution of the laser irradiation damage and a fast formation of crystalline tellurium aggregates on the layer surface."}],"article_number":"105023","language":[{"iso":"eng"}],"doi":"10.1088/0268-1242/26/10/105023","year":"2011","title":"In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy","author":[{"full_name":"Wiedemeier, V","first_name":"V","last_name":"Wiedemeier"},{"id":"53","full_name":"Berth, Gerhard","first_name":"Gerhard","last_name":"Berth"},{"last_name":"Zrenner","first_name":"Artur","orcid":"0000-0002-5190-0944","full_name":"Zrenner, Artur","id":"606"},{"first_name":"E M","last_name":"Larramendi","full_name":"Larramendi, E M"},{"full_name":"Woggon, U","last_name":"Woggon","first_name":"U"},{"full_name":"Lischka, K","last_name":"Lischka","first_name":"K"},{"first_name":"D","last_name":"Schikora","full_name":"Schikora, D"}],"publication_identifier":{"issn":["0268-1242","1361-6641"]},"date_updated":"2022-01-06T07:01:09Z","publication_status":"published","intvolume":"        26","article_type":"original"},{"publication_status":"published","date_updated":"2022-01-06T07:01:09Z","author":[{"full_name":"Frers, Torsten","first_name":"Torsten","last_name":"Frers"},{"full_name":"Hett, Thomas","last_name":"Hett","first_name":"Thomas"},{"full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich"},{"first_name":"Gerhard","last_name":"Berth","full_name":"Berth, Gerhard","id":"53"},{"last_name":"Widhalm","first_name":"Alex","full_name":"Widhalm, Alex"},{"orcid":"0000-0002-5190-0944","last_name":"Zrenner","first_name":"Artur","full_name":"Zrenner, Artur","id":"606"}],"publication_identifier":{"isbn":["9781457704314"]},"conference":{"name":"2011 Semiconductor Conference Dresden","start_date":"2011-09-27","location":"Dresden, Germany","end_date":"2011-09-28"},"title":"Characterization of SiON integrated waveguides via FTIR and AFM measurements","year":"2011","status":"public","user_id":"49428","doi":"10.1109/scd.2011.6068744","publisher":"IEEE","_id":"4546","language":[{"iso":"eng"}],"abstract":[{"text":"Silicon oxynitride (SiON) layers for telecommunication device application are grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) for various gas compositions of SiH4, N2O and NH3. Processing and annealing effects on the oxynitride films were studied by Fourier Transform Infrared Spectroscopy (FTIR) and Atomic Force Microscopy (AFM) measurements. By reduction of the silane (SiH4) gas flow and enhancement of the PECVD deposition temperature, the absorption loss due to NH bands can be nearly completely erased. Furthermore the surface roughness can be reduced by decreasing the gas flow and rising the deposition temperature. First waveguide structures are introduced and their characterization is presented.","lang":"eng"}],"citation":{"mla":"Frers, Torsten, et al. “Characterization of SiON Integrated Waveguides via FTIR and AFM Measurements.” <i>2011 Semiconductor Conference Dresden</i>, IEEE, 2011, doi:<a href=\"https://doi.org/10.1109/scd.2011.6068744\">10.1109/scd.2011.6068744</a>.","apa":"Frers, T., Hett, T., Hilleringmann, U., Berth, G., Widhalm, A., &#38; Zrenner, A. (2011). Characterization of SiON integrated waveguides via FTIR and AFM measurements. In <i>2011 Semiconductor Conference Dresden</i>. Dresden, Germany: IEEE. <a href=\"https://doi.org/10.1109/scd.2011.6068744\">https://doi.org/10.1109/scd.2011.6068744</a>","ieee":"T. Frers, T. Hett, U. Hilleringmann, G. Berth, A. Widhalm, and A. Zrenner, “Characterization of SiON integrated waveguides via FTIR and AFM measurements,” in <i>2011 Semiconductor Conference Dresden</i>, Dresden, Germany, 2011.","chicago":"Frers, Torsten, Thomas Hett, Ulrich Hilleringmann, Gerhard Berth, Alex Widhalm, and Artur Zrenner. “Characterization of SiON Integrated Waveguides via FTIR and AFM Measurements.” In <i>2011 Semiconductor Conference Dresden</i>. IEEE, 2011. <a href=\"https://doi.org/10.1109/scd.2011.6068744\">https://doi.org/10.1109/scd.2011.6068744</a>.","short":"T. Frers, T. Hett, U. Hilleringmann, G. Berth, A. Widhalm, A. Zrenner, in: 2011 Semiconductor Conference Dresden, IEEE, 2011.","ama":"Frers T, Hett T, Hilleringmann U, Berth G, Widhalm A, Zrenner A. Characterization of SiON integrated waveguides via FTIR and AFM measurements. In: <i>2011 Semiconductor Conference Dresden</i>. IEEE; 2011. doi:<a href=\"https://doi.org/10.1109/scd.2011.6068744\">10.1109/scd.2011.6068744</a>","bibtex":"@inproceedings{Frers_Hett_Hilleringmann_Berth_Widhalm_Zrenner_2011, title={Characterization of SiON integrated waveguides via FTIR and AFM measurements}, DOI={<a href=\"https://doi.org/10.1109/scd.2011.6068744\">10.1109/scd.2011.6068744</a>}, booktitle={2011 Semiconductor Conference Dresden}, publisher={IEEE}, author={Frers, Torsten and Hett, Thomas and Hilleringmann, Ulrich and Berth, Gerhard and Widhalm, Alex and Zrenner, Artur}, year={2011} }"},"publication":"2011 Semiconductor Conference Dresden","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"type":"conference","date_created":"2018-09-20T11:44:50Z"}]