TY - JOUR AU - Grbić, Boris AU - Leturcq, Renaud AU - Ensslin, Klaus AU - Reuter, Dirk AU - Wieck, Andreas D. ID - 8691 JF - Applied Physics Letters SN - 0003-6951 TI - Single-hole transistor in p-type GaAs∕AlGaAs heterostructures ER - TY - JOUR AU - Knop, M AU - Richter, M AU - Maßmann, R AU - Wieser, U AU - Kunze, U AU - Reuter, Dirk AU - Riedesel, C AU - Wieck, A D ID - 8693 JF - Semiconductor Science and Technology SN - 0268-1242 TI - Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene ER - TY - JOUR AU - Scheibner, R. AU - Buhmann, H. AU - Reuter, Dirk AU - Kiselev, M. N. AU - Molenkamp, L. W. ID - 8694 JF - Physical Review Letters SN - 0031-9007 TI - Thermopower of a Kondo Spin-Correlated Quantum Dot ER - TY - JOUR AU - SCHULZE-WISCHELER, F. AU - HOHLS, F. AU - ZEITLER, U. AU - Reuter, Dirk AU - WIECK, A. D. AU - HAUG, R. J. ID - 8708 JF - International Journal of Modern Physics B SN - 0217-9792 TI - PHONON EXCITATIONS OF COMPOSITE FERMION LANDAU LEVELS ER - TY - JOUR AU - SCHULZE-WISCHELER, F. AU - HOHLS, F. AU - ZEITLER, U. AU - Reuter, Dirk AU - WIECK, A. D. AU - HAUG, R. J. ID - 8713 JF - International Journal of Modern Physics B SN - 0217-9792 TI - PHONON EXCITATIONS OF COMPOSITE FERMION LANDAU LEVELS ER - TY - JOUR AB - The optical and electronic properties of semiconductor heterostructures in the vicinity of photonic crystals are discussed. The theoretical approach provides a self-consistent solution of the dynamics of the electromagnetic field and the material excitations. Due to the influence of the structured dielectric environment on the Coulomb interaction, the exciton resonances and the quasiequilibrium carrier densities in the spatially homogeneous semiconductor become space dependent. It is demonstrated that these inhomogeneities lead to distinct modifications of the optical absorption and gain spectra. As an application, numerically calculated density-dependent optical spectra are analyzed for an array of semiconductor quantum wires which are close to a two-dimensional photonic crystal. The spatial inhomogeneities result in novel excitonic absorption features and modification of the optical gain in these structures. AU - Reichelt, Matthias AU - Pasenow, B. AU - Meier, Torsten AU - Stroucken, T. AU - Koch, S. W. ID - 23496 IS - 3 JF - Physical Review B SN - 1098-0121 TI - Spatially inhomogeneous optical gain in semiconductor photonic-crystal structures VL - 71 ER - TY - JOUR AB - The ultrafast dynamics of photoexcitations at silicon surfaces is investigated using a surface-sensitive purely optical technique. In the experiments, the diffracted second harmonic generated by sequences of ultrashort laser pulses is detected as a function of the time delay between the pulses. It is demonstrated that this five-wave-mixing technique can be used to measure the temporal evolution of the optical polarization and the photoexcited populations at the surface. The experimental results can be reproduced by numerical solutions of optical Bloch equations. The theoretical analysis allows one to investigate which dephasing times and relaxation processes are compatible with experiment. Furthermore, it is outlined how one can describe optical nonlinearities at surfaces using a microscopic theory within the framework of semiconductor Bloch equations. AU - Meier, Torsten AU - Reichelt, Matthias AU - Koch, S W AU - Höfer, U ID - 23498 IS - 8 JF - Journal of Physics: Condensed Matter SN - 0953-8984 TI - Femtosecond time-resolved five-wave mixing at silicon surfaces VL - 17 ER - TY - JOUR AU - Christ, A. AU - Zentgraf, Thomas AU - Kuhl, J. AU - Tikhodeev, S. G. AU - Gippius, N. A. AU - Giessen, H. ID - 1746 IS - 12 JF - Physical Review B SN - 1098-0121 TI - Optical properties of planar metallic photonic crystal structures: Experiment and theory VL - 70 ER - TY - JOUR AU - Zentgraf, Thomas AU - Christ, A. AU - Kuhl, J. AU - Giessen, H. ID - 1747 IS - 24 JF - Physical Review Letters SN - 0031-9007 TI - Tailoring the Ultrafast Dephasing of Quasiparticles in Metallic Photonic Crystals VL - 93 ER - TY - JOUR AU - Langbein, W. AU - Borri, P. AU - Woggon, U. AU - Schwab, M. AU - Bayer, M. AU - Fafard, S. AU - Wasilewski, Z. AU - Hawrylak, P. AU - Stavarache, V. AU - Reuter, Dirk AU - Wieck, A.D. ID - 8676 JF - Physica E: Low-dimensional Systems and Nanostructures SN - 1386-9477 TI - Coherent dynamics in InGaAs quantum dots and quantum dot molecules ER - TY - JOUR AU - Reuter, Dirk AU - Kailuweit, P. AU - Wieck, A.D. AU - Zeitler, U. AU - Maan, J.C. ID - 8680 JF - Physica E: Low-dimensional Systems and Nanostructures SN - 1386-9477 TI - Magnetic field dependence of hole levels in InAs quantum dots ER - TY - JOUR AU - Schuster, E. AU - Keune, W. AU - Lo, F.-Y. AU - Reuter, Dirk AU - Wieck, A. AU - Westerholt, K. ID - 8687 JF - Superlattices and Microstructures SN - 0749-6036 TI - Preparation and characterization of epitaxial Fe(001) thin films on GaAs(001)-based LED for spin injection ER - TY - JOUR AU - Schmidt, R. AU - Vitzethum, M. AU - Fix, R. AU - Scholz, U. AU - Malzer, S. AU - Metzner, C. AU - Kailuweit, P. AU - Reuter, Dirk AU - Wieck, A. AU - Hübner, M.C. AU - Stufler, S. AU - Zrenner, A. AU - Döhler, G.H. ID - 8688 JF - Physica E: Low-dimensional Systems and Nanostructures SN - 1386-9477 TI - Electroluminescence of single-dot nano-LEDs—optical spectroscopy of an electrically tunable few-electron/hole system ER - TY - JOUR AU - Kähler, D AU - Knop, M AU - Kunze, U AU - Reuter, Dirk AU - Wieck, A D ID - 8692 JF - Semiconductor Science and Technology SN - 0268-1242 TI - Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation ER - TY - JOUR AU - Kähler, Dirk AU - Kunze, Ulrich AU - Reuter, Dirk AU - D. Wieck, Andreas ID - 8695 JF - Physica E: Low-dimensional Systems and Nanostructures SN - 1386-9477 TI - Ultrasmall nanoscale devices fabricated from compensating-layer GaAs/AlGaAs heterostructures ER - TY - JOUR AU - Petrosyan, S. AU - Yesayan, A. AU - Reuter, Dirk AU - Wieck, A. D. ID - 8696 JF - Applied Physics Letters SN - 0003-6951 TI - The linearly graded two-dimensional p–n junction ER - TY - JOUR AU - Riedesel, C AU - Reuter, Dirk AU - Wieck, A.D ID - 8697 JF - Physica E: Low-dimensional Systems and Nanostructures SN - 1386-9477 TI - Laterally patterned high mobility two-dimensional electron gases obtained by overgrowth of focused ion beam implanted Al1−xGaxAs ER - TY - JOUR AU - Reuter, Dirk AU - Schafmeister, P. AU - Kailuweit, P. AU - Wieck, A.D. ID - 8698 JF - Physica E: Low-dimensional Systems and Nanostructures SN - 1386-9477 TI - Frequency-dependent C(V) spectroscopy of the hole system in InAs quantum dots ER - TY - JOUR AU - Reuter, Dirk AU - Seekamp, A AU - Wieck, A.D ID - 8699 JF - Physica E: Low-dimensional Systems and Nanostructures SN - 1386-9477 TI - Fabrication of two-dimensional n- and p-type in-plane gate transistors from the same p-doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As heterostructure ER - TY - JOUR AU - Regul, J. AU - Hohls, F. AU - Reuter, Dirk AU - Wieck, A.D. AU - Haug, R.J. ID - 8700 JF - Physica E: Low-dimensional Systems and Nanostructures SN - 1386-9477 TI - High frequency conductance of a quantum point contact ER -