---
_id: '29202'
author:
- first_name: Souvaraj
full_name: De, Souvaraj
last_name: De
- first_name: Karanveer
full_name: Singh, Karanveer
last_name: Singh
- first_name: Christian
full_name: Kress, Christian
id: '13256'
last_name: Kress
orcid: 0000-0002-4403-2237
- first_name: Ranjan
full_name: Das, Ranjan
last_name: Das
- first_name: Tobias
full_name: Schwabe, Tobias
id: '39217'
last_name: Schwabe
- first_name: Stefan
full_name: Preußler, Stefan
last_name: Preußler
- first_name: Thomas
full_name: Kleine-Ostmann, Thomas
last_name: Kleine-Ostmann
- first_name: J. Christoph
full_name: Scheytt, J. Christoph
id: '37144'
last_name: Scheytt
orcid: https://orcid.org/0000-0002-5950-6618
- first_name: Thomas
full_name: Schneider, Thomas
last_name: Schneider
citation:
ama: De S, Singh K, Kress C, et al. Roll-Off Factor Analysis of Optical Nyquist
Pulses Generated by an On-Chip Mach-Zehnder Modulator. IEEE Photonics Technology
Letters. 2021;33(21):1189-1192. doi:10.1109/LPT.2021.3112485
apa: De, S., Singh, K., Kress, C., Das, R., Schwabe, T., Preußler, S., Kleine-Ostmann,
T., Scheytt, J. C., & Schneider, T. (2021). Roll-Off Factor Analysis of Optical
Nyquist Pulses Generated by an On-Chip Mach-Zehnder Modulator. IEEE Photonics
Technology Letters, 33(21), 1189–1192. https://doi.org/10.1109/LPT.2021.3112485
bibtex: '@article{De_Singh_Kress_Das_Schwabe_Preußler_Kleine-Ostmann_Scheytt_Schneider_2021,
title={Roll-Off Factor Analysis of Optical Nyquist Pulses Generated by an On-Chip
Mach-Zehnder Modulator}, volume={33}, DOI={10.1109/LPT.2021.3112485},
number={21}, journal={IEEE Photonics Technology Letters}, author={De, Souvaraj
and Singh, Karanveer and Kress, Christian and Das, Ranjan and Schwabe, Tobias
and Preußler, Stefan and Kleine-Ostmann, Thomas and Scheytt, J. Christoph and
Schneider, Thomas}, year={2021}, pages={1189–1192} }'
chicago: 'De, Souvaraj, Karanveer Singh, Christian Kress, Ranjan Das, Tobias Schwabe,
Stefan Preußler, Thomas Kleine-Ostmann, J. Christoph Scheytt, and Thomas Schneider.
“Roll-Off Factor Analysis of Optical Nyquist Pulses Generated by an On-Chip Mach-Zehnder
Modulator.” IEEE Photonics Technology Letters 33, no. 21 (2021): 1189–92.
https://doi.org/10.1109/LPT.2021.3112485.'
ieee: 'S. De et al., “Roll-Off Factor Analysis of Optical Nyquist Pulses
Generated by an On-Chip Mach-Zehnder Modulator,” IEEE Photonics Technology
Letters, vol. 33, no. 21, pp. 1189–1192, 2021, doi: 10.1109/LPT.2021.3112485.'
mla: De, Souvaraj, et al. “Roll-Off Factor Analysis of Optical Nyquist Pulses Generated
by an On-Chip Mach-Zehnder Modulator.” IEEE Photonics Technology Letters,
vol. 33, no. 21, 2021, pp. 1189–92, doi:10.1109/LPT.2021.3112485.
short: S. De, K. Singh, C. Kress, R. Das, T. Schwabe, S. Preußler, T. Kleine-Ostmann,
J.C. Scheytt, T. Schneider, IEEE Photonics Technology Letters 33 (2021) 1189–1192.
date_created: 2022-01-10T11:51:46Z
date_updated: 2025-07-02T12:18:14Z
department:
- _id: '58'
- _id: '230'
doi: 10.1109/LPT.2021.3112485
intvolume: ' 33'
issue: '21'
language:
- iso: eng
page: 1189-1192
project:
- _id: '302'
grant_number: '403154102'
name: 'PONyDAC: SPP 2111 - PONyDAC II - Präziser Optischer Nyquist-Puls-Synthesizer
DAC'
- _id: '299'
grant_number: 13N14882
name: 'NyPhE: NyPhE - Nyquist Silicon Photonics Engine'
publication: IEEE Photonics Technology Letters
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/9536766
status: public
title: Roll-Off Factor Analysis of Optical Nyquist Pulses Generated by an On-Chip
Mach-Zehnder Modulator
type: journal_article
user_id: '13256'
volume: 33
year: '2021'
...
---
_id: '20189'
abstract:
- lang: eng
text: A dielectric step-index optical fiber with tube-like profile is considered,
being positioned with a small gap on top of a dielectric slab waveguide. We propose
a 2.5-D hybrid analytical/numerical coupled mode model for the evanescent excitation
of the tube through semi-guided waves propagating in the slab at oblique angles.
The model combines the directional polarized modes supported by the slab with
analytic solutions for the TE-, TM-, and orbital-angular-momentum (OAM) modes
of the tube-shaped fiber. Implementational details of the scheme are discussed,
complemented by finite-element simulations for verification purposes. Our results
include configurations with resonant in-fiber excitation of OAM modes with large
orbital angular momentum and strong field enhancement.
article_number: '472'
author:
- first_name: Manfred
full_name: Hammer, Manfred
id: '48077'
last_name: Hammer
orcid: 0000-0002-6331-9348
- first_name: Lena
full_name: Ebers, Lena
id: '40428'
last_name: Ebers
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
citation:
ama: Hammer M, Ebers L, Förstner J. Hybrid coupled mode modelling of the evanescent
excitation of a dielectric tube by semi-guided waves at oblique angles. Optical
and Quantum Electronics. 2020;52. doi:10.1007/s11082-020-02595-z
apa: Hammer, M., Ebers, L., & Förstner, J. (2020). Hybrid coupled mode modelling
of the evanescent excitation of a dielectric tube by semi-guided waves at oblique
angles. Optical and Quantum Electronics, 52. https://doi.org/10.1007/s11082-020-02595-z
bibtex: '@article{Hammer_Ebers_Förstner_2020, title={Hybrid coupled mode modelling
of the evanescent excitation of a dielectric tube by semi-guided waves at oblique
angles}, volume={52}, DOI={10.1007/s11082-020-02595-z},
number={472}, journal={Optical and Quantum Electronics}, author={Hammer, Manfred
and Ebers, Lena and Förstner, Jens}, year={2020} }'
chicago: Hammer, Manfred, Lena Ebers, and Jens Förstner. “Hybrid Coupled Mode Modelling
of the Evanescent Excitation of a Dielectric Tube by Semi-Guided Waves at Oblique
Angles.” Optical and Quantum Electronics 52 (2020). https://doi.org/10.1007/s11082-020-02595-z.
ieee: M. Hammer, L. Ebers, and J. Förstner, “Hybrid coupled mode modelling of the
evanescent excitation of a dielectric tube by semi-guided waves at oblique angles,”
Optical and Quantum Electronics, vol. 52, 2020.
mla: Hammer, Manfred, et al. “Hybrid Coupled Mode Modelling of the Evanescent Excitation
of a Dielectric Tube by Semi-Guided Waves at Oblique Angles.” Optical and Quantum
Electronics, vol. 52, 472, 2020, doi:10.1007/s11082-020-02595-z.
short: M. Hammer, L. Ebers, J. Förstner, Optical and Quantum Electronics 52 (2020).
date_created: 2020-10-24T08:03:58Z
date_updated: 2022-01-06T06:54:22Z
ddc:
- '530'
department:
- _id: '61'
- _id: '230'
- _id: '429'
doi: 10.1007/s11082-020-02595-z
file:
- access_level: closed
content_type: application/pdf
creator: fossie
date_created: 2020-10-24T08:11:40Z
date_updated: 2020-10-24T08:11:40Z
file_id: '20190'
file_name: 2020-10 Hammer - OQE - Hybrid Coupled Mode Modelling Dielectric Tube.pdf
file_size: 2212769
relation: main_file
success: 1
file_date_updated: 2020-10-24T08:11:40Z
has_accepted_license: '1'
intvolume: ' 52'
keyword:
- tet_topic_waveguides
language:
- iso: eng
project:
- _id: '56'
name: TRR 142 - Project Area C
- _id: '75'
name: TRR 142 - Subproject C5
- _id: '53'
name: TRR 142
publication: Optical and Quantum Electronics
publication_identifier:
issn:
- 0306-8919
- 1572-817X
publication_status: published
status: public
title: Hybrid coupled mode modelling of the evanescent excitation of a dielectric
tube by semi-guided waves at oblique angles
type: journal_article
user_id: '158'
volume: 52
year: '2020'
...
---
_id: '20233'
abstract:
- lang: eng
text: The challenge of designing new tunable nonlinear dielectric materials with
tailored properties has attracted an increasing amount of interest recently. Herein,
we study the effective nonlinear dielectric response of a stochastic paraelectric-dielectric
composite consisting of equilibrium distributions of circular and partially penetrable
disks (or parallel, infinitely long, identical, partially penetrable, circular
cylinders) of a dielectric phase randomly dispersed in a continuous matrix of
a paraelectric phase. The random microstructures were generated using the Metropolis
Monte Carlo algorithm. The evaluation of the effective permittivity and tunability
were carried out by employing either a Landau thermodynamic model or its Johnson’s
approximation to describe the field-dependent permittivity of the paraelectric
phase and solving continuum-electrostatics equations using finite element calculations.
We reveal that the percolation threshold in this composite governs the critical
behavior of the effective permittivity and tunability. For microstructures below
the percolation threshold, our simulations demonstrate a strong nonlinear behaviour
of the field-dependent effective permittivity and very high tunability that increases
as a function of dielectric phase concentration. Above the percolation threshold,
the effective permittivity shows the tendency to linearization and the tunability
dramatically drops down. The highly reduced permittivity and extraordinarily high
tunability are obtained for the composites with dielectric impenetrable disks
at high concentrations, in which the triggering of the percolation transition
is avoided. The reported results cast light on distinct nonlinear behaviour of
2D and 3D stochastic composites and can guide the design of novel composites with
the controlled morphology and tailored permittivity and tunability.
author:
- first_name: Viktor
full_name: Myroshnychenko, Viktor
id: '46371'
last_name: Myroshnychenko
- first_name: Stanislav
full_name: Smirnov, Stanislav
last_name: Smirnov
- first_name: Pious Mathews Mulavarickal
full_name: Jose, Pious Mathews Mulavarickal
last_name: Jose
- first_name: Christian
full_name: Brosseau, Christian
last_name: Brosseau
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
citation:
ama: Myroshnychenko V, Smirnov S, Jose PMM, Brosseau C, Förstner J. Nonlinear dielectric
properties of random paraelectric-dielectric composites. Acta Materialia.
2020;203:116432. doi:10.1016/j.actamat.2020.10.051
apa: Myroshnychenko, V., Smirnov, S., Jose, P. M. M., Brosseau, C., & Förstner,
J. (2020). Nonlinear dielectric properties of random paraelectric-dielectric composites.
Acta Materialia, 203, 116432. https://doi.org/10.1016/j.actamat.2020.10.051
bibtex: '@article{Myroshnychenko_Smirnov_Jose_Brosseau_Förstner_2020, title={Nonlinear
dielectric properties of random paraelectric-dielectric composites}, volume={203},
DOI={10.1016/j.actamat.2020.10.051},
journal={Acta Materialia}, author={Myroshnychenko, Viktor and Smirnov, Stanislav
and Jose, Pious Mathews Mulavarickal and Brosseau, Christian and Förstner, Jens},
year={2020}, pages={116432} }'
chicago: 'Myroshnychenko, Viktor, Stanislav Smirnov, Pious Mathews Mulavarickal
Jose, Christian Brosseau, and Jens Förstner. “Nonlinear Dielectric Properties
of Random Paraelectric-Dielectric Composites.” Acta Materialia 203 (2020):
116432. https://doi.org/10.1016/j.actamat.2020.10.051.'
ieee: V. Myroshnychenko, S. Smirnov, P. M. M. Jose, C. Brosseau, and J. Förstner,
“Nonlinear dielectric properties of random paraelectric-dielectric composites,”
Acta Materialia, vol. 203, p. 116432, 2020.
mla: Myroshnychenko, Viktor, et al. “Nonlinear Dielectric Properties of Random Paraelectric-Dielectric
Composites.” Acta Materialia, vol. 203, 2020, p. 116432, doi:10.1016/j.actamat.2020.10.051.
short: V. Myroshnychenko, S. Smirnov, P.M.M. Jose, C. Brosseau, J. Förstner, Acta
Materialia 203 (2020) 116432.
date_created: 2020-10-30T13:51:42Z
date_updated: 2022-01-06T06:54:24Z
ddc:
- '530'
department:
- _id: '61'
- _id: '230'
doi: 10.1016/j.actamat.2020.10.051
file:
- access_level: open_access
content_type: application/pdf
creator: fossie
date_created: 2020-10-30T13:52:58Z
date_updated: 2020-10-30T13:52:58Z
file_id: '20234'
file_name: 2020-10 Myroshnychenko - Acta Material (accepted preprint)_compressed.pdf
file_size: 3934721
relation: main_file
title: (Accepted Preprint)
file_date_updated: 2020-10-30T13:52:58Z
has_accepted_license: '1'
intvolume: ' 203'
language:
- iso: eng
oa: '1'
page: '116432'
project:
- _id: '52'
name: Computing Resources Provided by the Paderborn Center for Parallel Computing
publication: Acta Materialia
publication_identifier:
issn:
- 1359-6454
publication_status: published
status: public
title: Nonlinear dielectric properties of random paraelectric-dielectric composites
type: journal_article
user_id: '158'
volume: 203
year: '2020'
...
---
_id: '17390'
article_type: original
author:
- first_name: Teanchai
full_name: Chantakit, Teanchai
last_name: Chantakit
- first_name: Christian
full_name: Schlickriede, Christian
id: '59792'
last_name: Schlickriede
- first_name: Basudeb
full_name: Sain, Basudeb
last_name: Sain
- first_name: Fabian
full_name: Meyer, Fabian
last_name: Meyer
- first_name: Thomas
full_name: Weiss, Thomas
last_name: Weiss
- first_name: Nattaporn
full_name: Chattham, Nattaporn
last_name: Chattham
- first_name: Thomas
full_name: Zentgraf, Thomas
id: '30525'
last_name: Zentgraf
orcid: 0000-0002-8662-1101
citation:
ama: Chantakit T, Schlickriede C, Sain B, et al. All-dielectric silicon metalens
for two-dimensional particle manipulation in optical tweezers. Photonics Research.
2020;8(9):1435-1440. doi:10.1364/prj.389200
apa: Chantakit, T., Schlickriede, C., Sain, B., Meyer, F., Weiss, T., Chattham,
N., & Zentgraf, T. (2020). All-dielectric silicon metalens for two-dimensional
particle manipulation in optical tweezers. Photonics Research, 8(9),
1435–1440. https://doi.org/10.1364/prj.389200
bibtex: '@article{Chantakit_Schlickriede_Sain_Meyer_Weiss_Chattham_Zentgraf_2020,
title={All-dielectric silicon metalens for two-dimensional particle manipulation
in optical tweezers}, volume={8}, DOI={10.1364/prj.389200},
number={9}, journal={Photonics Research}, publisher={OSA}, author={Chantakit,
Teanchai and Schlickriede, Christian and Sain, Basudeb and Meyer, Fabian and Weiss,
Thomas and Chattham, Nattaporn and Zentgraf, Thomas}, year={2020}, pages={1435–1440}
}'
chicago: 'Chantakit, Teanchai, Christian Schlickriede, Basudeb Sain, Fabian Meyer,
Thomas Weiss, Nattaporn Chattham, and Thomas Zentgraf. “All-Dielectric Silicon
Metalens for Two-Dimensional Particle Manipulation in Optical Tweezers.” Photonics
Research 8, no. 9 (2020): 1435–40. https://doi.org/10.1364/prj.389200.'
ieee: T. Chantakit et al., “All-dielectric silicon metalens for two-dimensional
particle manipulation in optical tweezers,” Photonics Research, vol. 8,
no. 9, pp. 1435–1440, 2020.
mla: Chantakit, Teanchai, et al. “All-Dielectric Silicon Metalens for Two-Dimensional
Particle Manipulation in Optical Tweezers.” Photonics Research, vol. 8,
no. 9, OSA, 2020, pp. 1435–40, doi:10.1364/prj.389200.
short: T. Chantakit, C. Schlickriede, B. Sain, F. Meyer, T. Weiss, N. Chattham,
T. Zentgraf, Photonics Research 8 (2020) 1435–1440.
date_created: 2020-07-16T07:35:01Z
date_updated: 2022-01-06T06:53:10Z
department:
- _id: '15'
- _id: '230'
- _id: '289'
doi: 10.1364/prj.389200
intvolume: ' 8'
issue: '9'
language:
- iso: eng
main_file_link:
- open_access: '1'
oa: '1'
page: 1435-1440
publication: Photonics Research
publication_identifier:
issn:
- 2327-9125
publication_status: published
publisher: OSA
quality_controlled: '1'
status: public
title: All-dielectric silicon metalens for two-dimensional particle manipulation in
optical tweezers
type: journal_article
user_id: '30525'
volume: 8
year: '2020'
...
---
_id: '17433'
article_number: '032102'
author:
- first_name: D. Q.
full_name: Wang, D. Q.
last_name: Wang
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: A. R.
full_name: Hamilton, A. R.
last_name: Hamilton
- first_name: O.
full_name: Klochan, O.
last_name: Klochan
citation:
ama: Wang DQ, Reuter D, Wieck AD, Hamilton AR, Klochan O. Two-dimensional lateral
surface superlattices in GaAs heterostructures with independent control of carrier
density and modulation potential. Applied Physics Letters. 2020. doi:10.1063/5.0009462
apa: Wang, D. Q., Reuter, D., Wieck, A. D., Hamilton, A. R., & Klochan, O. (2020).
Two-dimensional lateral surface superlattices in GaAs heterostructures with independent
control of carrier density and modulation potential. Applied Physics Letters.
https://doi.org/10.1063/5.0009462
bibtex: '@article{Wang_Reuter_Wieck_Hamilton_Klochan_2020, title={Two-dimensional
lateral surface superlattices in GaAs heterostructures with independent control
of carrier density and modulation potential}, DOI={10.1063/5.0009462},
number={032102}, journal={Applied Physics Letters}, author={Wang, D. Q. and Reuter,
Dirk and Wieck, A. D. and Hamilton, A. R. and Klochan, O.}, year={2020} }'
chicago: Wang, D. Q., Dirk Reuter, A. D. Wieck, A. R. Hamilton, and O. Klochan.
“Two-Dimensional Lateral Surface Superlattices in GaAs Heterostructures with Independent
Control of Carrier Density and Modulation Potential.” Applied Physics Letters,
2020. https://doi.org/10.1063/5.0009462.
ieee: D. Q. Wang, D. Reuter, A. D. Wieck, A. R. Hamilton, and O. Klochan, “Two-dimensional
lateral surface superlattices in GaAs heterostructures with independent control
of carrier density and modulation potential,” Applied Physics Letters,
2020.
mla: Wang, D. Q., et al. “Two-Dimensional Lateral Surface Superlattices in GaAs
Heterostructures with Independent Control of Carrier Density and Modulation Potential.”
Applied Physics Letters, 032102, 2020, doi:10.1063/5.0009462.
short: D.Q. Wang, D. Reuter, A.D. Wieck, A.R. Hamilton, O. Klochan, Applied Physics
Letters (2020).
date_created: 2020-07-29T08:21:01Z
date_updated: 2022-01-06T06:53:12Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/5.0009462
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Two-dimensional lateral surface superlattices in GaAs heterostructures with
independent control of carrier density and modulation potential
type: journal_article
user_id: '42514'
year: '2020'
...
---
_id: '17434'
article_number: '125597'
author:
- first_name: Vinay S.
full_name: Kunnathully, Vinay S.
last_name: Kunnathully
- first_name: Thomas
full_name: Riedl, Thomas
last_name: Riedl
- first_name: Alexander
full_name: Trapp, Alexander
last_name: Trapp
- first_name: Timo
full_name: Langer, Timo
last_name: Langer
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Jörg K.N.
full_name: Lindner, Jörg K.N.
last_name: Lindner
citation:
ama: Kunnathully VS, Riedl T, Trapp A, Langer T, Reuter D, Lindner JKN. InAs heteroepitaxy
on nanopillar-patterned GaAs (111)A. Journal of Crystal Growth. 2020. doi:10.1016/j.jcrysgro.2020.125597
apa: Kunnathully, V. S., Riedl, T., Trapp, A., Langer, T., Reuter, D., & Lindner,
J. K. N. (2020). InAs heteroepitaxy on nanopillar-patterned GaAs (111)A. Journal
of Crystal Growth. https://doi.org/10.1016/j.jcrysgro.2020.125597
bibtex: '@article{Kunnathully_Riedl_Trapp_Langer_Reuter_Lindner_2020, title={InAs
heteroepitaxy on nanopillar-patterned GaAs (111)A}, DOI={10.1016/j.jcrysgro.2020.125597},
number={125597}, journal={Journal of Crystal Growth}, author={Kunnathully, Vinay
S. and Riedl, Thomas and Trapp, Alexander and Langer, Timo and Reuter, Dirk and
Lindner, Jörg K.N.}, year={2020} }'
chicago: Kunnathully, Vinay S., Thomas Riedl, Alexander Trapp, Timo Langer, Dirk
Reuter, and Jörg K.N. Lindner. “InAs Heteroepitaxy on Nanopillar-Patterned GaAs
(111)A.” Journal of Crystal Growth, 2020. https://doi.org/10.1016/j.jcrysgro.2020.125597.
ieee: V. S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, and J. K. N.
Lindner, “InAs heteroepitaxy on nanopillar-patterned GaAs (111)A,” Journal
of Crystal Growth, 2020.
mla: Kunnathully, Vinay S., et al. “InAs Heteroepitaxy on Nanopillar-Patterned GaAs
(111)A.” Journal of Crystal Growth, 125597, 2020, doi:10.1016/j.jcrysgro.2020.125597.
short: V.S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, J.K.N. Lindner,
Journal of Crystal Growth (2020).
date_created: 2020-07-29T08:25:37Z
date_updated: 2022-01-06T06:53:12Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/j.jcrysgro.2020.125597
language:
- iso: eng
publication: Journal of Crystal Growth
publication_identifier:
issn:
- 0022-0248
publication_status: published
status: public
title: InAs heteroepitaxy on nanopillar-patterned GaAs (111)A
type: journal_article
user_id: '42514'
year: '2020'
...
---
_id: '17435'
author:
- first_name: M.
full_name: Geier, M.
last_name: Geier
- first_name: J.
full_name: Freudenfeld, J.
last_name: Freudenfeld
- first_name: J. T.
full_name: Silva, J. T.
last_name: Silva
- first_name: V.
full_name: Umansky, V.
last_name: Umansky
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: P. W.
full_name: Brouwer, P. W.
last_name: Brouwer
- first_name: S.
full_name: Ludwig, S.
last_name: Ludwig
citation:
ama: Geier M, Freudenfeld J, Silva JT, et al. Electrostatic potential shape of gate-defined
quantum point contacts. Physical Review B. 2020. doi:10.1103/physrevb.101.165429
apa: Geier, M., Freudenfeld, J., Silva, J. T., Umansky, V., Reuter, D., Wieck, A.
D., … Ludwig, S. (2020). Electrostatic potential shape of gate-defined quantum
point contacts. Physical Review B. https://doi.org/10.1103/physrevb.101.165429
bibtex: '@article{Geier_Freudenfeld_Silva_Umansky_Reuter_Wieck_Brouwer_Ludwig_2020,
title={Electrostatic potential shape of gate-defined quantum point contacts},
DOI={10.1103/physrevb.101.165429},
journal={Physical Review B}, author={Geier, M. and Freudenfeld, J. and Silva,
J. T. and Umansky, V. and Reuter, Dirk and Wieck, A. D. and Brouwer, P. W. and
Ludwig, S.}, year={2020} }'
chicago: Geier, M., J. Freudenfeld, J. T. Silva, V. Umansky, Dirk Reuter, A. D.
Wieck, P. W. Brouwer, and S. Ludwig. “Electrostatic Potential Shape of Gate-Defined
Quantum Point Contacts.” Physical Review B, 2020. https://doi.org/10.1103/physrevb.101.165429.
ieee: M. Geier et al., “Electrostatic potential shape of gate-defined quantum
point contacts,” Physical Review B, 2020.
mla: Geier, M., et al. “Electrostatic Potential Shape of Gate-Defined Quantum Point
Contacts.” Physical Review B, 2020, doi:10.1103/physrevb.101.165429.
short: M. Geier, J. Freudenfeld, J.T. Silva, V. Umansky, D. Reuter, A.D. Wieck,
P.W. Brouwer, S. Ludwig, Physical Review B (2020).
date_created: 2020-07-29T08:27:47Z
date_updated: 2022-01-06T06:53:12Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevb.101.165429
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 2469-9950
- 2469-9969
publication_status: published
status: public
title: Electrostatic potential shape of gate-defined quantum point contacts
type: journal_article
user_id: '42514'
year: '2020'
...
---
_id: '17436'
abstract:
- lang: eng
text: The study of electron transport in low-dimensional systems is of importance,
not only from a fundamental point of view, but also for future electronic and
spintronic devices. In this context heterostructures containing a two-dimensional
electron gas (2DEG) are a key technology. In particular GaAs/AlGaAs heterostructures,
with a 2DEG at typically 100 nm below the surface, are widely studied. In order
to explore electron transport in such systems, low-resistance ohmic contacts are
required that connect the 2DEG to macroscopic measurement leads at the surface.
Here we report on designing and measuring a dedicated device for unraveling the
various resistance contributions in such contacts, which include pristine 2DEG
series resistance, the 2DEG resistance under a contact, the contact resistance
itself, and the influence of pressing a bonding wire onto a contact. We also report
here a recipe for contacts with very low resistance values that remain below 10
Ω for annealing times between 20 and 350 s, hence providing the flexibility to
use this method for materials with different 2DEG depths. The type of heating,
temperature ramp rate and gas forming used for annealing is found to strongly
influence the annealing process and hence the quality of the resulting contacts.
article_number: '20101'
author:
- first_name: Muhammad
full_name: Javaid Iqbal, Muhammad
last_name: Javaid Iqbal
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas Dirk
full_name: Wieck, Andreas Dirk
last_name: Wieck
- first_name: Caspar
full_name: van der Wal, Caspar
last_name: van der Wal
citation:
ama: Javaid Iqbal M, Reuter D, Wieck AD, van der Wal C. Characterization of low-resistance
ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure.
The European Physical Journal Applied Physics. 2020. doi:10.1051/epjap/2020190202
apa: Javaid Iqbal, M., Reuter, D., Wieck, A. D., & van der Wal, C. (2020). Characterization
of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs
heterostructure. The European Physical Journal Applied Physics. https://doi.org/10.1051/epjap/2020190202
bibtex: '@article{Javaid Iqbal_Reuter_Wieck_van der Wal_2020, title={Characterization
of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs
heterostructure}, DOI={10.1051/epjap/2020190202},
number={20101}, journal={The European Physical Journal Applied Physics}, author={Javaid
Iqbal, Muhammad and Reuter, Dirk and Wieck, Andreas Dirk and van der Wal, Caspar},
year={2020} }'
chicago: Javaid Iqbal, Muhammad, Dirk Reuter, Andreas Dirk Wieck, and Caspar van
der Wal. “Characterization of Low-Resistance Ohmic Contacts to a Two-Dimensional
Electron Gas in a GaAs/AlGaAs Heterostructure.” The European Physical Journal
Applied Physics, 2020. https://doi.org/10.1051/epjap/2020190202.
ieee: M. Javaid Iqbal, D. Reuter, A. D. Wieck, and C. van der Wal, “Characterization
of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs
heterostructure,” The European Physical Journal Applied Physics, 2020.
mla: Javaid Iqbal, Muhammad, et al. “Characterization of Low-Resistance Ohmic Contacts
to a Two-Dimensional Electron Gas in a GaAs/AlGaAs Heterostructure.” The European
Physical Journal Applied Physics, 20101, 2020, doi:10.1051/epjap/2020190202.
short: M. Javaid Iqbal, D. Reuter, A.D. Wieck, C. van der Wal, The European Physical
Journal Applied Physics (2020).
date_created: 2020-07-29T08:29:26Z
date_updated: 2022-01-06T06:53:12Z
department:
- _id: '15'
- _id: '230'
doi: 10.1051/epjap/2020190202
language:
- iso: eng
publication: The European Physical Journal Applied Physics
publication_identifier:
issn:
- 1286-0042
- 1286-0050
publication_status: published
status: public
title: Characterization of low-resistance ohmic contacts to a two-dimensional electron
gas in a GaAs/AlGaAs heterostructure
type: journal_article
user_id: '42514'
year: '2020'
...
---
_id: '17437'
author:
- first_name: C.
full_name: Ebler, C.
last_name: Ebler
- first_name: P. A.
full_name: Labud, P. A.
last_name: Labud
- first_name: A. K.
full_name: Rai, A. K.
last_name: Rai
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: A.
full_name: Ludwig, A.
last_name: Ludwig
citation:
ama: Ebler C, Labud PA, Rai AK, Reuter D, Wieck AD, Ludwig A. Electrical detection
of excitonic states by time-resolved conductance measurements. Physical Review
B. 2020. doi:10.1103/physrevb.101.125303
apa: Ebler, C., Labud, P. A., Rai, A. K., Reuter, D., Wieck, A. D., & Ludwig,
A. (2020). Electrical detection of excitonic states by time-resolved conductance
measurements. Physical Review B. https://doi.org/10.1103/physrevb.101.125303
bibtex: '@article{Ebler_Labud_Rai_Reuter_Wieck_Ludwig_2020, title={Electrical detection
of excitonic states by time-resolved conductance measurements}, DOI={10.1103/physrevb.101.125303},
journal={Physical Review B}, author={Ebler, C. and Labud, P. A. and Rai, A. K.
and Reuter, Dirk and Wieck, A. D. and Ludwig, A.}, year={2020} }'
chicago: Ebler, C., P. A. Labud, A. K. Rai, Dirk Reuter, A. D. Wieck, and A. Ludwig.
“Electrical Detection of Excitonic States by Time-Resolved Conductance Measurements.”
Physical Review B, 2020. https://doi.org/10.1103/physrevb.101.125303.
ieee: C. Ebler, P. A. Labud, A. K. Rai, D. Reuter, A. D. Wieck, and A. Ludwig, “Electrical
detection of excitonic states by time-resolved conductance measurements,” Physical
Review B, 2020.
mla: Ebler, C., et al. “Electrical Detection of Excitonic States by Time-Resolved
Conductance Measurements.” Physical Review B, 2020, doi:10.1103/physrevb.101.125303.
short: C. Ebler, P.A. Labud, A.K. Rai, D. Reuter, A.D. Wieck, A. Ludwig, Physical
Review B (2020).
date_created: 2020-07-29T08:30:34Z
date_updated: 2022-01-06T06:53:12Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevb.101.125303
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 2469-9950
- 2469-9969
publication_status: published
status: public
title: Electrical detection of excitonic states by time-resolved conductance measurements
type: journal_article
user_id: '42514'
year: '2020'
...
---
_id: '17523'
abstract:
- lang: eng
text: Compact and robust cold atom sources are increasingly important for
quantum research, especially for transferring cutting-edge quantum science into
practical applications. In this study, we report on a novel scheme that uses a
metasurface optical chip to replace the conventional bulky optical elements used
to produce a cold atomic ensemble with a single incident laser beam, which is
split by the metasurface into multiple beams of the desired polarization states.
Atom numbers ~107 and temperatures (about 35 μK) of relevance
to quantum sensing are achieved in a compact and robust fashion. Our work highlights
the substantial progress toward fully integrated cold atom quantum devices by
exploiting metasurface optical chips, which may have great potential in quantum
sensing, quantum computing, and other areas.
article_number: eabb6667
article_type: original
author:
- first_name: Lingxiao
full_name: Zhu, Lingxiao
last_name: Zhu
- first_name: Xuan
full_name: Liu, Xuan
last_name: Liu
- first_name: Basudeb
full_name: Sain, Basudeb
last_name: Sain
- first_name: Mengyao
full_name: Wang, Mengyao
last_name: Wang
- first_name: Christian
full_name: Schlickriede, Christian
id: '59792'
last_name: Schlickriede
- first_name: Yutao
full_name: Tang, Yutao
last_name: Tang
- first_name: Junhong
full_name: Deng, Junhong
last_name: Deng
- first_name: Kingfai
full_name: Li, Kingfai
last_name: Li
- first_name: Jun
full_name: Yang, Jun
last_name: Yang
- first_name: Michael
full_name: Holynski, Michael
last_name: Holynski
- first_name: Shuang
full_name: Zhang, Shuang
last_name: Zhang
- first_name: Thomas
full_name: Zentgraf, Thomas
id: '30525'
last_name: Zentgraf
orcid: 0000-0002-8662-1101
- first_name: Kai
full_name: Bongs, Kai
last_name: Bongs
- first_name: Yu-Hung
full_name: Lien, Yu-Hung
last_name: Lien
- first_name: Guixin
full_name: Li, Guixin
last_name: Li
citation:
ama: Zhu L, Liu X, Sain B, et al. A dielectric metasurface optical chip for the
generation of cold atoms. Science Advances. 2020;6(31). doi:10.1126/sciadv.abb6667
apa: Zhu, L., Liu, X., Sain, B., Wang, M., Schlickriede, C., Tang, Y., … Li, G.
(2020). A dielectric metasurface optical chip for the generation of cold atoms.
Science Advances, 6(31). https://doi.org/10.1126/sciadv.abb6667
bibtex: '@article{Zhu_Liu_Sain_Wang_Schlickriede_Tang_Deng_Li_Yang_Holynski_et al._2020,
title={A dielectric metasurface optical chip for the generation of cold atoms},
volume={6}, DOI={10.1126/sciadv.abb6667},
number={31eabb6667}, journal={Science Advances}, publisher={American Association
for the Advancement of Science}, author={Zhu, Lingxiao and Liu, Xuan and Sain,
Basudeb and Wang, Mengyao and Schlickriede, Christian and Tang, Yutao and Deng,
Junhong and Li, Kingfai and Yang, Jun and Holynski, Michael and et al.}, year={2020}
}'
chicago: Zhu, Lingxiao, Xuan Liu, Basudeb Sain, Mengyao Wang, Christian Schlickriede,
Yutao Tang, Junhong Deng, et al. “A Dielectric Metasurface Optical Chip for the
Generation of Cold Atoms.” Science Advances 6, no. 31 (2020). https://doi.org/10.1126/sciadv.abb6667.
ieee: L. Zhu et al., “A dielectric metasurface optical chip for the generation
of cold atoms,” Science Advances, vol. 6, no. 31, 2020.
mla: Zhu, Lingxiao, et al. “A Dielectric Metasurface Optical Chip for the Generation
of Cold Atoms.” Science Advances, vol. 6, no. 31, eabb6667, American Association
for the Advancement of Science, 2020, doi:10.1126/sciadv.abb6667.
short: L. Zhu, X. Liu, B. Sain, M. Wang, C. Schlickriede, Y. Tang, J. Deng, K. Li,
J. Yang, M. Holynski, S. Zhang, T. Zentgraf, K. Bongs, Y.-H. Lien, G. Li, Science
Advances 6 (2020).
date_created: 2020-08-02T07:22:03Z
date_updated: 2022-01-06T06:53:14Z
department:
- _id: '15'
- _id: '230'
- _id: '289'
- _id: '623'
doi: 10.1126/sciadv.abb6667
intvolume: ' 6'
issue: '31'
language:
- iso: eng
publication: Science Advances
publication_identifier:
issn:
- 2375-2548
publication_status: published
publisher: American Association for the Advancement of Science
quality_controlled: '1'
status: public
title: A dielectric metasurface optical chip for the generation of cold atoms
type: journal_article
user_id: '30525'
volume: 6
year: '2020'
...
---
_id: '17803'
abstract:
- lang: eng
text: We numerically simulate multiple light scattering in discrete disordered media
represented by large clusters of irregular non-absorbing particles. The packing
density of clusters is 0.5. With such conditions diffuse scattering is significantly
reduced and light transport follows propagation channels that are determined by
the particle size and topology of the medium. This kind of localization produces
coherent backscattering intensity surge and enhanced negative polarization branch
if compared to lower density samples.
author:
- first_name: Yevgen
full_name: Grynko, Yevgen
id: '26059'
last_name: Grynko
- first_name: Yuriy
full_name: Shkuratov, Yuriy
last_name: Shkuratov
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
citation:
ama: Grynko Y, Shkuratov Y, Förstner J. Light backscattering from large clusters
of densely packed irregular particles. Journal of Quantitative Spectroscopy
and Radiative Transfer. 2020;255:107234. doi:10.1016/j.jqsrt.2020.107234
apa: Grynko, Y., Shkuratov, Y., & Förstner, J. (2020). Light backscattering
from large clusters of densely packed irregular particles. Journal of Quantitative
Spectroscopy and Radiative Transfer, 255, 107234. https://doi.org/10.1016/j.jqsrt.2020.107234
bibtex: '@article{Grynko_Shkuratov_Förstner_2020, title={Light backscattering from
large clusters of densely packed irregular particles}, volume={255}, DOI={10.1016/j.jqsrt.2020.107234},
journal={Journal of Quantitative Spectroscopy and Radiative Transfer}, author={Grynko,
Yevgen and Shkuratov, Yuriy and Förstner, Jens}, year={2020}, pages={107234} }'
chicago: 'Grynko, Yevgen, Yuriy Shkuratov, and Jens Förstner. “Light Backscattering
from Large Clusters of Densely Packed Irregular Particles.” Journal of Quantitative
Spectroscopy and Radiative Transfer 255 (2020): 107234. https://doi.org/10.1016/j.jqsrt.2020.107234.'
ieee: Y. Grynko, Y. Shkuratov, and J. Förstner, “Light backscattering from large
clusters of densely packed irregular particles,” Journal of Quantitative Spectroscopy
and Radiative Transfer, vol. 255, p. 107234, 2020.
mla: Grynko, Yevgen, et al. “Light Backscattering from Large Clusters of Densely
Packed Irregular Particles.” Journal of Quantitative Spectroscopy and Radiative
Transfer, vol. 255, 2020, p. 107234, doi:10.1016/j.jqsrt.2020.107234.
short: Y. Grynko, Y. Shkuratov, J. Förstner, Journal of Quantitative Spectroscopy
and Radiative Transfer 255 (2020) 107234.
date_created: 2020-08-11T09:07:04Z
date_updated: 2022-01-06T06:53:20Z
ddc:
- '530'
department:
- _id: '61'
- _id: '230'
doi: 10.1016/j.jqsrt.2020.107234
file:
- access_level: open_access
content_type: application/pdf
creator: fossie
date_created: 2020-08-11T15:24:31Z
date_updated: 2020-08-11T15:24:31Z
file_id: '17814'
file_name: 2020-08 Grynko - JQSRT PREPRINT - Large Cluster.pdf
file_size: 1567605
relation: main_file
title: Preprint
file_date_updated: 2020-08-11T15:24:31Z
has_accepted_license: '1'
intvolume: ' 255'
keyword:
- tet_topic_scattering
language:
- iso: eng
oa: '1'
page: '107234'
project:
- _id: '52'
name: Computing Resources Provided by the Paderborn Center for Parallel Computing
publication: Journal of Quantitative Spectroscopy and Radiative Transfer
publication_identifier:
issn:
- 0022-4073
publication_status: published
status: public
title: Light backscattering from large clusters of densely packed irregular particles
type: journal_article
user_id: '158'
volume: 255
year: '2020'
...
---
_id: '23838'
author:
- first_name: Abbes
full_name: Beloufa, Abbes
last_name: Beloufa
- first_name: Driss
full_name: Bouguenna, Driss
last_name: Bouguenna
- first_name: Nawel
full_name: Kermas, Nawel
last_name: Kermas
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Beloufa A, Bouguenna D, Kermas N, As DJ. A Physics-Based Compact Static and
Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs. Journal
of Electronic Materials. 2020:2008-2017. doi:10.1007/s11664-019-07927-8
apa: Beloufa, A., Bouguenna, D., Kermas, N., & As, D. J. (2020). A Physics-Based
Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs.
Journal of Electronic Materials, 2008–2017. https://doi.org/10.1007/s11664-019-07927-8
bibtex: '@article{Beloufa_Bouguenna_Kermas_As_2020, title={A Physics-Based Compact
Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs},
DOI={10.1007/s11664-019-07927-8},
journal={Journal of Electronic Materials}, author={Beloufa, Abbes and Bouguenna,
Driss and Kermas, Nawel and As, Donat Josef}, year={2020}, pages={2008–2017} }'
chicago: Beloufa, Abbes, Driss Bouguenna, Nawel Kermas, and Donat Josef As. “A Physics-Based
Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs.”
Journal of Electronic Materials, 2020, 2008–17. https://doi.org/10.1007/s11664-019-07927-8.
ieee: A. Beloufa, D. Bouguenna, N. Kermas, and D. J. As, “A Physics-Based Compact
Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs,”
Journal of Electronic Materials, pp. 2008–2017, 2020.
mla: Beloufa, Abbes, et al. “A Physics-Based Compact Static and Dynamic Characteristics
Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs.” Journal of Electronic Materials,
2020, pp. 2008–17, doi:10.1007/s11664-019-07927-8.
short: A. Beloufa, D. Bouguenna, N. Kermas, D.J. As, Journal of Electronic Materials
(2020) 2008–2017.
date_created: 2021-09-07T09:15:01Z
date_updated: 2022-01-06T06:56:01Z
department:
- _id: '230'
doi: 10.1007/s11664-019-07927-8
language:
- iso: eng
page: 2008-2017
publication: Journal of Electronic Materials
publication_identifier:
issn:
- 0361-5235
- 1543-186X
publication_status: published
status: public
title: A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN
MOS-HEMTs
type: journal_article
user_id: '14'
year: '2020'
...
---
_id: '23840'
article_number: '1900522'
author:
- first_name: Elias
full_name: Baron, Elias
last_name: Baron
- first_name: Rüdiger
full_name: Goldhahn, Rüdiger
last_name: Goldhahn
- first_name: Michael
full_name: Deppe, Michael
last_name: Deppe
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: Martin
full_name: Feneberg, Martin
last_name: Feneberg
citation:
ama: Baron E, Goldhahn R, Deppe M, As DJ, Feneberg M. Photoluminescence Line‐Shape
Analysis of Highly n‐Type Doped Zincblende GaN. physica status solidi (b).
2020. doi:10.1002/pssb.201900522
apa: Baron, E., Goldhahn, R., Deppe, M., As, D. J., & Feneberg, M. (2020). Photoluminescence
Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN. Physica Status Solidi
(B). https://doi.org/10.1002/pssb.201900522
bibtex: '@article{Baron_Goldhahn_Deppe_As_Feneberg_2020, title={Photoluminescence
Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN}, DOI={10.1002/pssb.201900522},
number={1900522}, journal={physica status solidi (b)}, author={Baron, Elias and
Goldhahn, Rüdiger and Deppe, Michael and As, Donat Josef and Feneberg, Martin},
year={2020} }'
chicago: Baron, Elias, Rüdiger Goldhahn, Michael Deppe, Donat Josef As, and Martin
Feneberg. “Photoluminescence Line‐Shape Analysis of Highly N‐Type Doped Zincblende
GaN.” Physica Status Solidi (B), 2020. https://doi.org/10.1002/pssb.201900522.
ieee: E. Baron, R. Goldhahn, M. Deppe, D. J. As, and M. Feneberg, “Photoluminescence
Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN,” physica status
solidi (b), 2020.
mla: Baron, Elias, et al. “Photoluminescence Line‐Shape Analysis of Highly N‐Type
Doped Zincblende GaN.” Physica Status Solidi (B), 1900522, 2020, doi:10.1002/pssb.201900522.
short: E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg, Physica Status Solidi
(B) (2020).
date_created: 2021-09-07T09:17:31Z
date_updated: 2022-01-06T06:56:01Z
department:
- _id: '230'
- _id: '429'
doi: 10.1002/pssb.201900522
language:
- iso: eng
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
- 1521-3951
publication_status: published
status: public
title: Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN
type: journal_article
user_id: '14'
year: '2020'
...
---
_id: '23841'
article_number: '1900532'
author:
- first_name: Michael
full_name: Deppe, Michael
last_name: Deppe
- first_name: Tobias
full_name: Henksmeier, Tobias
last_name: Henksmeier
- first_name: Jürgen W.
full_name: Gerlach, Jürgen W.
last_name: Gerlach
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Deppe M, Henksmeier T, Gerlach JW, Reuter D, As DJ. Molecular Beam Epitaxy
Growth and Characterization of Germanium‐Doped Cubic Al
x Ga 1− x
N. physica status solidi (b). 2020. doi:10.1002/pssb.201900532
apa: Deppe, M., Henksmeier, T., Gerlach, J. W., Reuter, D., & As, D. J. (2020).
Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al
x Ga 1−
x N. Physica Status Solidi (B). https://doi.org/10.1002/pssb.201900532
bibtex: '@article{Deppe_Henksmeier_Gerlach_Reuter_As_2020, title={Molecular Beam
Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al
x Ga 1− x
N}, DOI={10.1002/pssb.201900532},
number={1900532}, journal={physica status solidi (b)}, author={Deppe, Michael
and Henksmeier, Tobias and Gerlach, Jürgen W. and Reuter, Dirk and As, Donat Josef},
year={2020} }'
chicago: Deppe, Michael, Tobias Henksmeier, Jürgen W. Gerlach, Dirk Reuter, and
Donat Josef As. “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped
Cubic Al x Ga 1−
x N.” Physica Status Solidi (B),
2020. https://doi.org/10.1002/pssb.201900532.
ieee: M. Deppe, T. Henksmeier, J. W. Gerlach, D. Reuter, and D. J. As, “Molecular
Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al
x Ga 1−
x N,” physica status solidi (b), 2020.
mla: Deppe, Michael, et al. “Molecular Beam Epitaxy Growth and Characterization
of Germanium‐Doped Cubic Al x
Ga 1− x N.” Physica
Status Solidi (B), 1900532, 2020, doi:10.1002/pssb.201900532.
short: M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status
Solidi (B) (2020).
date_created: 2021-09-07T09:18:26Z
date_updated: 2022-01-06T06:56:01Z
department:
- _id: '230'
- _id: '429'
doi: 10.1002/pssb.201900532
language:
- iso: eng
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
- 1521-3951
publication_status: published
status: public
title: Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic
Al x Ga 1− x N
type: journal_article
user_id: '14'
year: '2020'
...
---
_id: '20372'
abstract:
- lang: eng
text: A stepwise angular spectrum method (SASM) for curved interfaces is presented
to calculate the wave propagation in planar lens-like integrated optical structures
based on photonic slab waveguides. The method is derived and illustrated for an
effective 2D setup first and then for 3D slab waveguide lenses. We employ slab
waveguides of different thicknesses connected by curved surfaces to realize a
lens-like structure. To simulate the wave propagation in 3D including reflection
and scattering losses, the stepwise angular spectrum method is combined with full
vectorial finite element computations for subproblems with lower complexity. Our
SASM results show excellent agreement with rigorous numerical simulations of the
full structures with a substantially lower computational effort and can be utilized
for the simulation-based design and optimization of complex and large scale setups.
author:
- first_name: Lena
full_name: Ebers, Lena
id: '40428'
last_name: Ebers
- first_name: Manfred
full_name: Hammer, Manfred
id: '48077'
last_name: Hammer
orcid: 0000-0002-6331-9348
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
citation:
ama: Ebers L, Hammer M, Förstner J. Light diffraction in slab waveguide lenses simulated
with the stepwise angular spectrum method. Optics Express. 2020;28(24):36361.
doi:10.1364/oe.409612
apa: Ebers, L., Hammer, M., & Förstner, J. (2020). Light diffraction in slab
waveguide lenses simulated with the stepwise angular spectrum method. Optics
Express, 28(24), 36361. https://doi.org/10.1364/oe.409612
bibtex: '@article{Ebers_Hammer_Förstner_2020, title={Light diffraction in slab waveguide
lenses simulated with the stepwise angular spectrum method}, volume={28}, DOI={10.1364/oe.409612}, number={24},
journal={Optics Express}, author={Ebers, Lena and Hammer, Manfred and Förstner,
Jens}, year={2020}, pages={36361} }'
chicago: 'Ebers, Lena, Manfred Hammer, and Jens Förstner. “Light Diffraction in
Slab Waveguide Lenses Simulated with the Stepwise Angular Spectrum Method.” Optics
Express 28, no. 24 (2020): 36361. https://doi.org/10.1364/oe.409612.'
ieee: L. Ebers, M. Hammer, and J. Förstner, “Light diffraction in slab waveguide
lenses simulated with the stepwise angular spectrum method,” Optics Express,
vol. 28, no. 24, p. 36361, 2020.
mla: Ebers, Lena, et al. “Light Diffraction in Slab Waveguide Lenses Simulated with
the Stepwise Angular Spectrum Method.” Optics Express, vol. 28, no. 24,
2020, p. 36361, doi:10.1364/oe.409612.
short: L. Ebers, M. Hammer, J. Förstner, Optics Express 28 (2020) 36361.
date_created: 2020-11-17T09:52:47Z
date_updated: 2022-01-06T06:54:26Z
department:
- _id: '61'
- _id: '230'
- _id: '429'
doi: 10.1364/oe.409612
intvolume: ' 28'
issue: '24'
keyword:
- tet_topic_waveguides
language:
- iso: eng
page: '36361'
project:
- _id: '53'
name: TRR 142
- _id: '56'
name: TRR 142 - Project Area C
- _id: '74'
name: TRR 142 - Subproject C4
- _id: '52'
name: Computing Resources Provided by the Paderborn Center for Parallel Computing
publication: Optics Express
publication_identifier:
issn:
- 1094-4087
publication_status: published
status: public
title: Light diffraction in slab waveguide lenses simulated with the stepwise angular
spectrum method
type: journal_article
user_id: '158'
volume: 28
year: '2020'
...
---
_id: '20644'
abstract:
- lang: eng
text: Plasmonic nanoantennas for visible and infrared radiation strongly improve
the interaction of light with the matter on the nanoscale due to their strong
near-field enhancement. In this study, we investigate a double-resonant plasmonic
nanoantenna, which makes use of plasmonic field enhancement, enhanced outcoupling
of second harmonic light, and resonant lattice effects. Using this design, we
demonstrate how the efficiency of second harmonic generation can be increased
significantly by fully embedding the nanoantennas into nonlinear dielectric material
ZnO, instead of placing them on the surface. Investigating two different processes,
we found that the best fabrication route is embedding the gold nanoantennas in
ZnO using an MBE overgrowth process where a thin ZnO layer was deposited on nanoantennas
fabricated on a ZnO substrate. In addition, second harmonic generation measurements
show that the embedding leads to an enhancement compared to the emission of nanoantennas
placed on the ZnO substrate surface. These promising results facilitate further
research to determine the influence of the periodicity of the nanoantenna arrangement
of the resulting SHG signal.
article_number: '043107'
article_type: original
author:
- first_name: Ruth
full_name: Volmert, Ruth
last_name: Volmert
- first_name: Nils
full_name: Weber, Nils
last_name: Weber
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Volmert R, Weber N, Meier C. Nanoantennas embedded in zinc oxide for second
harmonic generation enhancement. Journal of Applied Physics. 2020;128(4).
doi:10.1063/5.0012813
apa: Volmert, R., Weber, N., & Meier, C. (2020). Nanoantennas embedded in zinc
oxide for second harmonic generation enhancement. Journal of Applied Physics,
128(4). https://doi.org/10.1063/5.0012813
bibtex: '@article{Volmert_Weber_Meier_2020, title={Nanoantennas embedded in zinc
oxide for second harmonic generation enhancement}, volume={128}, DOI={10.1063/5.0012813},
number={4043107}, journal={Journal of Applied Physics}, author={Volmert, Ruth
and Weber, Nils and Meier, Cedrik}, year={2020} }'
chicago: Volmert, Ruth, Nils Weber, and Cedrik Meier. “Nanoantennas Embedded in
Zinc Oxide for Second Harmonic Generation Enhancement.” Journal of Applied
Physics 128, no. 4 (2020). https://doi.org/10.1063/5.0012813.
ieee: R. Volmert, N. Weber, and C. Meier, “Nanoantennas embedded in zinc oxide for
second harmonic generation enhancement,” Journal of Applied Physics, vol.
128, no. 4, 2020.
mla: Volmert, Ruth, et al. “Nanoantennas Embedded in Zinc Oxide for Second Harmonic
Generation Enhancement.” Journal of Applied Physics, vol. 128, no. 4, 043107,
2020, doi:10.1063/5.0012813.
short: R. Volmert, N. Weber, C. Meier, Journal of Applied Physics 128 (2020).
date_created: 2020-12-02T12:57:58Z
date_updated: 2022-01-06T06:54:31Z
department:
- _id: '230'
- _id: '429'
doi: 10.1063/5.0012813
external_id:
isi:
- '000557311900001'
intvolume: ' 128'
isi: '1'
issue: '4'
language:
- iso: eng
project:
- _id: '53'
name: TRR 142
- _id: '55'
name: TRR 142 - Project Area B
- _id: '66'
name: TRR 142 - Subproject B1
- _id: '56'
name: TRR 142 - Project Area C
- _id: '75'
name: TRR 142 - Subproject C5
publication: Journal of Applied Physics
publication_identifier:
eissn:
- 1089-7550
issn:
- 0021-8979
publication_status: published
quality_controlled: '1'
status: public
title: Nanoantennas embedded in zinc oxide for second harmonic generation enhancement
type: journal_article
user_id: '20798'
volume: 128
year: '2020'
...
---
_id: '20847'
author:
- first_name: Thomas
full_name: Zentgraf, Thomas
id: '30525'
last_name: Zentgraf
orcid: 0000-0002-8662-1101
- first_name: Shumei
full_name: Chen, Shumei
last_name: Chen
- first_name: Guixin
full_name: Li, Guixin
last_name: Li
- first_name: Shuang
full_name: Zhang, Shuang
last_name: Zhang
citation:
ama: 'Zentgraf T, Chen S, Li G, Zhang S. Plasmonic metasurfaces for controlling
harmonic generations. In: Werner DH, Campbell SD, Kang L, eds. Nanoantennas
and Plasmonics: Modelling, Design and Fabrication. The Institution of Engineering
and Technology; 2020. doi:10.1049/SBEW540E_ch8'
apa: 'Zentgraf, T., Chen, S., Li, G., & Zhang, S. (2020). Plasmonic metasurfaces
for controlling harmonic generations. In D. H. Werner, S. D. Campbell, & L.
Kang (Eds.), Nanoantennas and Plasmonics: Modelling, design and fabrication.
The Institution of Engineering and Technology. https://doi.org/10.1049/SBEW540E_ch8'
bibtex: '@inbook{Zentgraf_Chen_Li_Zhang_2020, title={Plasmonic metasurfaces for
controlling harmonic generations}, DOI={10.1049/SBEW540E_ch8},
booktitle={Nanoantennas and Plasmonics: Modelling, design and fabrication}, publisher={The
Institution of Engineering and Technology}, author={Zentgraf, Thomas and Chen,
Shumei and Li, Guixin and Zhang, Shuang}, editor={Werner, Douglas H. and Campbell,
Sawyer D. and Kang, LeiEditors}, year={2020} }'
chicago: 'Zentgraf, Thomas, Shumei Chen, Guixin Li, and Shuang Zhang. “Plasmonic
Metasurfaces for Controlling Harmonic Generations.” In Nanoantennas and Plasmonics:
Modelling, Design and Fabrication, edited by Douglas H. Werner, Sawyer D.
Campbell, and Lei Kang. The Institution of Engineering and Technology, 2020. https://doi.org/10.1049/SBEW540E_ch8.'
ieee: 'T. Zentgraf, S. Chen, G. Li, and S. Zhang, “Plasmonic metasurfaces for controlling
harmonic generations,” in Nanoantennas and Plasmonics: Modelling, design and
fabrication, D. H. Werner, S. D. Campbell, and L. Kang, Eds. The Institution
of Engineering and Technology, 2020.'
mla: 'Zentgraf, Thomas, et al. “Plasmonic Metasurfaces for Controlling Harmonic
Generations.” Nanoantennas and Plasmonics: Modelling, Design and Fabrication,
edited by Douglas H. Werner et al., The Institution of Engineering and Technology,
2020, doi:10.1049/SBEW540E_ch8.'
short: 'T. Zentgraf, S. Chen, G. Li, S. Zhang, in: D.H. Werner, S.D. Campbell, L.
Kang (Eds.), Nanoantennas and Plasmonics: Modelling, Design and Fabrication, The
Institution of Engineering and Technology, 2020.'
date_created: 2021-01-04T08:38:14Z
date_updated: 2022-01-06T06:54:40Z
department:
- _id: '15'
- _id: '230'
- _id: '289'
doi: 10.1049/SBEW540E_ch8
editor:
- first_name: Douglas H.
full_name: Werner, Douglas H.
last_name: Werner
- first_name: Sawyer D.
full_name: Campbell, Sawyer D.
last_name: Campbell
- first_name: Lei
full_name: Kang, Lei
last_name: Kang
language:
- iso: eng
project:
- _id: '53'
name: TRR 142
- _id: '56'
name: TRR 142 - Project Area C
- _id: '75'
name: TRR 142 - Subproject C5
publication: 'Nanoantennas and Plasmonics: Modelling, design and fabrication'
publication_identifier:
eisbn:
- '9781785618383'
publication_status: published
publisher: The Institution of Engineering and Technology
status: public
title: Plasmonic metasurfaces for controlling harmonic generations
type: book_chapter
user_id: '30525'
year: '2020'
...
---
_id: '17995'
article_number: '063102'
author:
- first_name: Christian
full_name: Riha, Christian
last_name: Riha
- first_name: Sven S.
full_name: Buchholz, Sven S.
last_name: Buchholz
- first_name: Olivio
full_name: Chiatti, Olivio
last_name: Chiatti
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Saskia F.
full_name: Fischer, Saskia F.
last_name: Fischer
citation:
ama: Riha C, Buchholz SS, Chiatti O, Wieck AD, Reuter D, Fischer SF. Excess noise
in Al x Ga 1 − xAs/GaAs based quantum rings. Applied Physics Letters.
2020. doi:10.1063/5.0002247
apa: Riha, C., Buchholz, S. S., Chiatti, O., Wieck, A. D., Reuter, D., & Fischer,
S. F. (2020). Excess noise in Al x Ga 1 − xAs/GaAs based quantum rings.
Applied Physics Letters. https://doi.org/10.1063/5.0002247
bibtex: '@article{Riha_Buchholz_Chiatti_Wieck_Reuter_Fischer_2020, title={Excess
noise in Al x Ga 1 − xAs/GaAs based quantum rings}, DOI={10.1063/5.0002247},
number={063102}, journal={Applied Physics Letters}, author={Riha, Christian and
Buchholz, Sven S. and Chiatti, Olivio and Wieck, Andreas D. and Reuter, Dirk and
Fischer, Saskia F.}, year={2020} }'
chicago: Riha, Christian, Sven S. Buchholz, Olivio Chiatti, Andreas D. Wieck, Dirk
Reuter, and Saskia F. Fischer. “Excess Noise in Al x Ga 1 − XAs/GaAs Based
Quantum Rings.” Applied Physics Letters, 2020. https://doi.org/10.1063/5.0002247.
ieee: C. Riha, S. S. Buchholz, O. Chiatti, A. D. Wieck, D. Reuter, and S. F. Fischer,
“Excess noise in Al x Ga 1 − xAs/GaAs based quantum rings,” Applied
Physics Letters, 2020.
mla: Riha, Christian, et al. “Excess Noise in Al x Ga 1 − XAs/GaAs Based
Quantum Rings.” Applied Physics Letters, 063102, 2020, doi:10.1063/5.0002247.
short: C. Riha, S.S. Buchholz, O. Chiatti, A.D. Wieck, D. Reuter, S.F. Fischer,
Applied Physics Letters (2020).
date_created: 2020-08-17T06:48:46Z
date_updated: 2022-01-06T06:53:24Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/5.0002247
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Excess noise in Al x Ga 1 − xAs/GaAs based quantum rings
type: journal_article
user_id: '42514'
year: '2020'
...
---
_id: '21796'
article_number: '085011'
author:
- first_name: J
full_name: Schuster, J
last_name: Schuster
- first_name: T Y
full_name: Kim, T Y
last_name: Kim
- first_name: E
full_name: Batke, E
last_name: Batke
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A D
full_name: Wieck, A D
last_name: Wieck
citation:
ama: Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Two-dimensional electron bound
hole photoluminescence in GaAs in perpendicular magnetic fields. Semiconductor
Science and Technology. 2020. doi:10.1088/1361-6641/ab89e1
apa: Schuster, J., Kim, T. Y., Batke, E., Reuter, D., & Wieck, A. D. (2020).
Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular
magnetic fields. Semiconductor Science and Technology. https://doi.org/10.1088/1361-6641/ab89e1
bibtex: '@article{Schuster_Kim_Batke_Reuter_Wieck_2020, title={Two-dimensional electron
bound hole photoluminescence in GaAs in perpendicular magnetic fields}, DOI={10.1088/1361-6641/ab89e1},
number={085011}, journal={Semiconductor Science and Technology}, author={Schuster,
J and Kim, T Y and Batke, E and Reuter, Dirk and Wieck, A D}, year={2020} }'
chicago: Schuster, J, T Y Kim, E Batke, Dirk Reuter, and A D Wieck. “Two-Dimensional
Electron Bound Hole Photoluminescence in GaAs in Perpendicular Magnetic Fields.”
Semiconductor Science and Technology, 2020. https://doi.org/10.1088/1361-6641/ab89e1.
ieee: J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Two-dimensional
electron bound hole photoluminescence in GaAs in perpendicular magnetic fields,”
Semiconductor Science and Technology, 2020.
mla: Schuster, J., et al. “Two-Dimensional Electron Bound Hole Photoluminescence
in GaAs in Perpendicular Magnetic Fields.” Semiconductor Science and Technology,
085011, 2020, doi:10.1088/1361-6641/ab89e1.
short: J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science
and Technology (2020).
date_created: 2021-04-26T06:55:54Z
date_updated: 2022-01-06T06:55:13Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/1361-6641/ab89e1
language:
- iso: eng
publication: Semiconductor Science and Technology
publication_identifier:
issn:
- 0268-1242
- 1361-6641
publication_status: published
status: public
title: Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular
magnetic fields
type: journal_article
user_id: '42514'
year: '2020'
...
---
_id: '21797'
author:
- first_name: T.
full_name: Riedl, T.
last_name: Riedl
- first_name: V. S.
full_name: Kunnathully, V. S.
last_name: Kunnathully
- first_name: A.
full_name: Trapp, A.
last_name: Trapp
- first_name: T.
full_name: Langer, T.
last_name: Langer
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: J. K. N.
full_name: Lindner, J. K. N.
last_name: Lindner
citation:
ama: Riedl T, Kunnathully VS, Trapp A, Langer T, Reuter D, Lindner JKN. Strain-driven
InAs island growth on top of GaAs(111) nanopillars. Physical Review Materials.
2020. doi:10.1103/physrevmaterials.4.014602
apa: Riedl, T., Kunnathully, V. S., Trapp, A., Langer, T., Reuter, D., & Lindner,
J. K. N. (2020). Strain-driven InAs island growth on top of GaAs(111) nanopillars.
Physical Review Materials. https://doi.org/10.1103/physrevmaterials.4.014602
bibtex: '@article{Riedl_Kunnathully_Trapp_Langer_Reuter_Lindner_2020, title={Strain-driven
InAs island growth on top of GaAs(111) nanopillars}, DOI={10.1103/physrevmaterials.4.014602},
journal={Physical Review Materials}, author={Riedl, T. and Kunnathully, V. S.
and Trapp, A. and Langer, T. and Reuter, Dirk and Lindner, J. K. N.}, year={2020}
}'
chicago: Riedl, T., V. S. Kunnathully, A. Trapp, T. Langer, Dirk Reuter, and J.
K. N. Lindner. “Strain-Driven InAs Island Growth on Top of GaAs(111) Nanopillars.”
Physical Review Materials, 2020. https://doi.org/10.1103/physrevmaterials.4.014602.
ieee: T. Riedl, V. S. Kunnathully, A. Trapp, T. Langer, D. Reuter, and J. K. N.
Lindner, “Strain-driven InAs island growth on top of GaAs(111) nanopillars,” Physical
Review Materials, 2020.
mla: Riedl, T., et al. “Strain-Driven InAs Island Growth on Top of GaAs(111) Nanopillars.”
Physical Review Materials, 2020, doi:10.1103/physrevmaterials.4.014602.
short: T. Riedl, V.S. Kunnathully, A. Trapp, T. Langer, D. Reuter, J.K.N. Lindner,
Physical Review Materials (2020).
date_created: 2021-04-26T07:27:11Z
date_updated: 2022-01-06T06:55:13Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevmaterials.4.014602
language:
- iso: eng
publication: Physical Review Materials
publication_identifier:
issn:
- 2475-9953
publication_status: published
status: public
title: Strain-driven InAs island growth on top of GaAs(111) nanopillars
type: journal_article
user_id: '42514'
year: '2020'
...