---
_id: '7300'
author:
- first_name: A. M.
full_name: Burke, A. M.
last_name: Burke
- first_name: D. E. J.
full_name: Waddington, D. E. J.
last_name: Waddington
- first_name: D. J.
full_name: Carrad, D. J.
last_name: Carrad
- first_name: R. W.
full_name: Lyttleton, R. W.
last_name: Lyttleton
- first_name: H. H.
full_name: Tan, H. H.
last_name: Tan
- first_name: P. J.
full_name: Reece, P. J.
last_name: Reece
- first_name: O.
full_name: Klochan, O.
last_name: Klochan
- first_name: A. R.
full_name: Hamilton, A. R.
last_name: Hamilton
- first_name: A.
full_name: Rai, A.
last_name: Rai
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: A. P.
full_name: Micolich, A. P.
last_name: Micolich
citation:
ama: Burke AM, Waddington DEJ, Carrad DJ, et al. Origin of gate hysteresis inp-type
Si-doped AlGaAs/GaAs heterostructures. Physical Review B. 2012;86(16).
doi:10.1103/physrevb.86.165309
apa: Burke, A. M., Waddington, D. E. J., Carrad, D. J., Lyttleton, R. W., Tan, H.
H., Reece, P. J., … Micolich, A. P. (2012). Origin of gate hysteresis inp-type
Si-doped AlGaAs/GaAs heterostructures. Physical Review B, 86(16).
https://doi.org/10.1103/physrevb.86.165309
bibtex: '@article{Burke_Waddington_Carrad_Lyttleton_Tan_Reece_Klochan_Hamilton_Rai_Reuter_et
al._2012, title={Origin of gate hysteresis inp-type Si-doped AlGaAs/GaAs heterostructures},
volume={86}, DOI={10.1103/physrevb.86.165309},
number={16}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Burke, A. M. and Waddington, D. E. J. and Carrad, D. J. and Lyttleton,
R. W. and Tan, H. H. and Reece, P. J. and Klochan, O. and Hamilton, A. R. and
Rai, A. and Reuter, Dirk and et al.}, year={2012} }'
chicago: Burke, A. M., D. E. J. Waddington, D. J. Carrad, R. W. Lyttleton, H. H.
Tan, P. J. Reece, O. Klochan, et al. “Origin of Gate Hysteresis Inp-Type Si-Doped
AlGaAs/GaAs Heterostructures.” Physical Review B 86, no. 16 (2012). https://doi.org/10.1103/physrevb.86.165309.
ieee: A. M. Burke et al., “Origin of gate hysteresis inp-type Si-doped AlGaAs/GaAs
heterostructures,” Physical Review B, vol. 86, no. 16, 2012.
mla: Burke, A. M., et al. “Origin of Gate Hysteresis Inp-Type Si-Doped AlGaAs/GaAs
Heterostructures.” Physical Review B, vol. 86, no. 16, American Physical
Society (APS), 2012, doi:10.1103/physrevb.86.165309.
short: A.M. Burke, D.E.J. Waddington, D.J. Carrad, R.W. Lyttleton, H.H. Tan, P.J.
Reece, O. Klochan, A.R. Hamilton, A. Rai, D. Reuter, A.D. Wieck, A.P. Micolich,
Physical Review B 86 (2012).
date_created: 2019-01-31T09:04:16Z
date_updated: 2022-01-06T07:03:33Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevb.86.165309
intvolume: ' 86'
issue: '16'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Origin of gate hysteresis inp-type Si-doped AlGaAs/GaAs heterostructures
type: journal_article
user_id: '42514'
volume: 86
year: '2012'
...
---
_id: '7301'
article_number: '112402'
author:
- first_name: Henning
full_name: Höpfner, Henning
last_name: Höpfner
- first_name: Carola
full_name: Fritsche, Carola
last_name: Fritsche
- first_name: Arne
full_name: Ludwig, Arne
last_name: Ludwig
- first_name: Astrid
full_name: Ludwig, Astrid
last_name: Ludwig
- first_name: Frank
full_name: Stromberg, Frank
last_name: Stromberg
- first_name: Heiko
full_name: Wende, Heiko
last_name: Wende
- first_name: Werner
full_name: Keune, Werner
last_name: Keune
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Nils C.
full_name: Gerhardt, Nils C.
last_name: Gerhardt
- first_name: Martin R.
full_name: Hofmann, Martin R.
last_name: Hofmann
citation:
ama: Höpfner H, Fritsche C, Ludwig A, et al. Magnetic field dependence of the spin
relaxation length in spin light-emitting diodes. Applied Physics Letters.
2012;101(11). doi:10.1063/1.4752162
apa: Höpfner, H., Fritsche, C., Ludwig, A., Ludwig, A., Stromberg, F., Wende, H.,
… Hofmann, M. R. (2012). Magnetic field dependence of the spin relaxation length
in spin light-emitting diodes. Applied Physics Letters, 101(11).
https://doi.org/10.1063/1.4752162
bibtex: '@article{Höpfner_Fritsche_Ludwig_Ludwig_Stromberg_Wende_Keune_Reuter_Wieck_Gerhardt_et
al._2012, title={Magnetic field dependence of the spin relaxation length in spin
light-emitting diodes}, volume={101}, DOI={10.1063/1.4752162},
number={11112402}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Höpfner, Henning and Fritsche, Carola and Ludwig, Arne and Ludwig, Astrid
and Stromberg, Frank and Wende, Heiko and Keune, Werner and Reuter, Dirk and Wieck,
Andreas D. and Gerhardt, Nils C. and et al.}, year={2012} }'
chicago: Höpfner, Henning, Carola Fritsche, Arne Ludwig, Astrid Ludwig, Frank Stromberg,
Heiko Wende, Werner Keune, et al. “Magnetic Field Dependence of the Spin Relaxation
Length in Spin Light-Emitting Diodes.” Applied Physics Letters 101, no.
11 (2012). https://doi.org/10.1063/1.4752162.
ieee: H. Höpfner et al., “Magnetic field dependence of the spin relaxation
length in spin light-emitting diodes,” Applied Physics Letters, vol. 101,
no. 11, 2012.
mla: Höpfner, Henning, et al. “Magnetic Field Dependence of the Spin Relaxation
Length in Spin Light-Emitting Diodes.” Applied Physics Letters, vol. 101,
no. 11, 112402, AIP Publishing, 2012, doi:10.1063/1.4752162.
short: H. Höpfner, C. Fritsche, A. Ludwig, A. Ludwig, F. Stromberg, H. Wende, W.
Keune, D. Reuter, A.D. Wieck, N.C. Gerhardt, M.R. Hofmann, Applied Physics Letters
101 (2012).
date_created: 2019-01-31T09:05:22Z
date_updated: 2022-01-06T07:03:33Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.4752162
intvolume: ' 101'
issue: '11'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Magnetic field dependence of the spin relaxation length in spin light-emitting
diodes
type: journal_article
user_id: '42514'
volume: 101
year: '2012'
...
---
_id: '7302'
author:
- first_name: S.
full_name: Varwig, S.
last_name: Varwig
- first_name: A.
full_name: Schwan, A.
last_name: Schwan
- first_name: D.
full_name: Barmscheid, D.
last_name: Barmscheid
- first_name: C.
full_name: Müller, C.
last_name: Müller
- first_name: A.
full_name: Greilich, A.
last_name: Greilich
- first_name: I. A.
full_name: Yugova, I. A.
last_name: Yugova
- first_name: D. R.
full_name: Yakovlev, D. R.
last_name: Yakovlev
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: M.
full_name: Bayer, M.
last_name: Bayer
citation:
ama: 'Varwig S, Schwan A, Barmscheid D, et al. Hole spin precession in a (In,Ga)As
quantum dot ensemble: From resonant spin amplification to spin mode locking. Physical
Review B. 2012;86(7). doi:10.1103/physrevb.86.075321'
apa: 'Varwig, S., Schwan, A., Barmscheid, D., Müller, C., Greilich, A., Yugova,
I. A., … Bayer, M. (2012). Hole spin precession in a (In,Ga)As quantum dot ensemble:
From resonant spin amplification to spin mode locking. Physical Review B,
86(7). https://doi.org/10.1103/physrevb.86.075321'
bibtex: '@article{Varwig_Schwan_Barmscheid_Müller_Greilich_Yugova_Yakovlev_Reuter_Wieck_Bayer_2012,
title={Hole spin precession in a (In,Ga)As quantum dot ensemble: From resonant
spin amplification to spin mode locking}, volume={86}, DOI={10.1103/physrevb.86.075321},
number={7}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Varwig, S. and Schwan, A. and Barmscheid, D. and Müller, C. and
Greilich, A. and Yugova, I. A. and Yakovlev, D. R. and Reuter, Dirk and Wieck,
A. D. and Bayer, M.}, year={2012} }'
chicago: 'Varwig, S., A. Schwan, D. Barmscheid, C. Müller, A. Greilich, I. A. Yugova,
D. R. Yakovlev, Dirk Reuter, A. D. Wieck, and M. Bayer. “Hole Spin Precession
in a (In,Ga)As Quantum Dot Ensemble: From Resonant Spin Amplification to Spin
Mode Locking.” Physical Review B 86, no. 7 (2012). https://doi.org/10.1103/physrevb.86.075321.'
ieee: 'S. Varwig et al., “Hole spin precession in a (In,Ga)As quantum dot
ensemble: From resonant spin amplification to spin mode locking,” Physical
Review B, vol. 86, no. 7, 2012.'
mla: 'Varwig, S., et al. “Hole Spin Precession in a (In,Ga)As Quantum Dot Ensemble:
From Resonant Spin Amplification to Spin Mode Locking.” Physical Review B,
vol. 86, no. 7, American Physical Society (APS), 2012, doi:10.1103/physrevb.86.075321.'
short: S. Varwig, A. Schwan, D. Barmscheid, C. Müller, A. Greilich, I.A. Yugova,
D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physical Review B 86 (2012).
date_created: 2019-01-31T09:06:08Z
date_updated: 2022-01-06T07:03:33Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevb.86.075321
intvolume: ' 86'
issue: '7'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: 'Hole spin precession in a (In,Ga)As quantum dot ensemble: From resonant spin
amplification to spin mode locking'
type: journal_article
user_id: '42514'
volume: 86
year: '2012'
...
---
_id: '7303'
author:
- first_name: A.
full_name: Ganczarczyk, A.
last_name: Ganczarczyk
- first_name: S.
full_name: Rojek, S.
last_name: Rojek
- first_name: A.
full_name: Quindeau, A.
last_name: Quindeau
- first_name: M.
full_name: Geller, M.
last_name: Geller
- first_name: A.
full_name: Hucht, A.
last_name: Hucht
- first_name: C.
full_name: Notthoff, C.
last_name: Notthoff
- first_name: J.
full_name: König, J.
last_name: König
- first_name: A.
full_name: Lorke, A.
last_name: Lorke
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Ganczarczyk A, Rojek S, Quindeau A, et al. Transverse rectification in density-modulated
two-dimensional electron gases. Physical Review B. 2012;86(8). doi:10.1103/physrevb.86.085309
apa: Ganczarczyk, A., Rojek, S., Quindeau, A., Geller, M., Hucht, A., Notthoff,
C., … Wieck, A. D. (2012). Transverse rectification in density-modulated two-dimensional
electron gases. Physical Review B, 86(8). https://doi.org/10.1103/physrevb.86.085309
bibtex: '@article{Ganczarczyk_Rojek_Quindeau_Geller_Hucht_Notthoff_König_Lorke_Reuter_Wieck_2012,
title={Transverse rectification in density-modulated two-dimensional electron
gases}, volume={86}, DOI={10.1103/physrevb.86.085309},
number={8}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Ganczarczyk, A. and Rojek, S. and Quindeau, A. and Geller, M.
and Hucht, A. and Notthoff, C. and König, J. and Lorke, A. and Reuter, Dirk and
Wieck, A. D.}, year={2012} }'
chicago: Ganczarczyk, A., S. Rojek, A. Quindeau, M. Geller, A. Hucht, C. Notthoff,
J. König, A. Lorke, Dirk Reuter, and A. D. Wieck. “Transverse Rectification in
Density-Modulated Two-Dimensional Electron Gases.” Physical Review B 86,
no. 8 (2012). https://doi.org/10.1103/physrevb.86.085309.
ieee: A. Ganczarczyk et al., “Transverse rectification in density-modulated
two-dimensional electron gases,” Physical Review B, vol. 86, no. 8, 2012.
mla: Ganczarczyk, A., et al. “Transverse Rectification in Density-Modulated Two-Dimensional
Electron Gases.” Physical Review B, vol. 86, no. 8, American Physical Society
(APS), 2012, doi:10.1103/physrevb.86.085309.
short: A. Ganczarczyk, S. Rojek, A. Quindeau, M. Geller, A. Hucht, C. Notthoff,
J. König, A. Lorke, D. Reuter, A.D. Wieck, Physical Review B 86 (2012).
date_created: 2019-01-31T09:07:24Z
date_updated: 2022-01-06T07:03:33Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevb.86.085309
intvolume: ' 86'
issue: '8'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Transverse rectification in density-modulated two-dimensional electron gases
type: journal_article
user_id: '42514'
volume: 86
year: '2012'
...
---
_id: '7312'
article_number: '232110'
author:
- first_name: Andreas
full_name: Beckel, Andreas
last_name: Beckel
- first_name: Daming
full_name: Zhou, Daming
last_name: Zhou
- first_name: Bastian
full_name: Marquardt, Bastian
last_name: Marquardt
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Martin
full_name: Geller, Martin
last_name: Geller
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
citation:
ama: Beckel A, Zhou D, Marquardt B, et al. Momentum matching in the tunneling between
2-dimensional and 0-dimensional electron systems. Applied Physics Letters.
2012;100(23). doi:10.1063/1.4728114
apa: Beckel, A., Zhou, D., Marquardt, B., Reuter, D., Wieck, A. D., Geller, M.,
& Lorke, A. (2012). Momentum matching in the tunneling between 2-dimensional
and 0-dimensional electron systems. Applied Physics Letters, 100(23).
https://doi.org/10.1063/1.4728114
bibtex: '@article{Beckel_Zhou_Marquardt_Reuter_Wieck_Geller_Lorke_2012, title={Momentum
matching in the tunneling between 2-dimensional and 0-dimensional electron systems},
volume={100}, DOI={10.1063/1.4728114},
number={23232110}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Beckel, Andreas and Zhou, Daming and Marquardt, Bastian and Reuter, Dirk
and Wieck, Andreas D. and Geller, Martin and Lorke, Axel}, year={2012} }'
chicago: Beckel, Andreas, Daming Zhou, Bastian Marquardt, Dirk Reuter, Andreas D.
Wieck, Martin Geller, and Axel Lorke. “Momentum Matching in the Tunneling between
2-Dimensional and 0-Dimensional Electron Systems.” Applied Physics Letters
100, no. 23 (2012). https://doi.org/10.1063/1.4728114.
ieee: A. Beckel et al., “Momentum matching in the tunneling between 2-dimensional
and 0-dimensional electron systems,” Applied Physics Letters, vol. 100,
no. 23, 2012.
mla: Beckel, Andreas, et al. “Momentum Matching in the Tunneling between 2-Dimensional
and 0-Dimensional Electron Systems.” Applied Physics Letters, vol. 100,
no. 23, 232110, AIP Publishing, 2012, doi:10.1063/1.4728114.
short: A. Beckel, D. Zhou, B. Marquardt, D. Reuter, A.D. Wieck, M. Geller, A. Lorke,
Applied Physics Letters 100 (2012).
date_created: 2019-01-31T10:22:42Z
date_updated: 2022-01-06T07:03:34Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.4728114
intvolume: ' 100'
issue: '23'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Momentum matching in the tunneling between 2-dimensional and 0-dimensional
electron systems
type: journal_article
user_id: '42514'
volume: 100
year: '2012'
...
---
_id: '7313'
article_number: '232107'
author:
- first_name: A.
full_name: Schwan, A.
last_name: Schwan
- first_name: S.
full_name: Varwig, S.
last_name: Varwig
- first_name: A.
full_name: Greilich, A.
last_name: Greilich
- first_name: D. R.
full_name: Yakovlev, D. R.
last_name: Yakovlev
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: M.
full_name: Bayer, M.
last_name: Bayer
citation:
ama: Schwan A, Varwig S, Greilich A, et al. Non-resonant optical excitation of mode-locked
electron spin coherence in (In,Ga)As/GaAs quantum dot ensemble. Applied Physics
Letters. 2012;100(23). doi:10.1063/1.4726264
apa: Schwan, A., Varwig, S., Greilich, A., Yakovlev, D. R., Reuter, D., Wieck, A.
D., & Bayer, M. (2012). Non-resonant optical excitation of mode-locked electron
spin coherence in (In,Ga)As/GaAs quantum dot ensemble. Applied Physics Letters,
100(23). https://doi.org/10.1063/1.4726264
bibtex: '@article{Schwan_Varwig_Greilich_Yakovlev_Reuter_Wieck_Bayer_2012, title={Non-resonant
optical excitation of mode-locked electron spin coherence in (In,Ga)As/GaAs quantum
dot ensemble}, volume={100}, DOI={10.1063/1.4726264},
number={23232107}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Schwan, A. and Varwig, S. and Greilich, A. and Yakovlev, D. R. and Reuter,
Dirk and Wieck, A. D. and Bayer, M.}, year={2012} }'
chicago: Schwan, A., S. Varwig, A. Greilich, D. R. Yakovlev, Dirk Reuter, A. D.
Wieck, and M. Bayer. “Non-Resonant Optical Excitation of Mode-Locked Electron
Spin Coherence in (In,Ga)As/GaAs Quantum Dot Ensemble.” Applied Physics Letters
100, no. 23 (2012). https://doi.org/10.1063/1.4726264.
ieee: A. Schwan et al., “Non-resonant optical excitation of mode-locked electron
spin coherence in (In,Ga)As/GaAs quantum dot ensemble,” Applied Physics Letters,
vol. 100, no. 23, 2012.
mla: Schwan, A., et al. “Non-Resonant Optical Excitation of Mode-Locked Electron
Spin Coherence in (In,Ga)As/GaAs Quantum Dot Ensemble.” Applied Physics Letters,
vol. 100, no. 23, 232107, AIP Publishing, 2012, doi:10.1063/1.4726264.
short: A. Schwan, S. Varwig, A. Greilich, D.R. Yakovlev, D. Reuter, A.D. Wieck,
M. Bayer, Applied Physics Letters 100 (2012).
date_created: 2019-01-31T10:23:29Z
date_updated: 2022-01-06T07:03:34Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.4726264
intvolume: ' 100'
issue: '23'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Non-resonant optical excitation of mode-locked electron spin coherence in (In,Ga)As/GaAs
quantum dot ensemble
type: journal_article
user_id: '42514'
volume: 100
year: '2012'
...
---
_id: '7315'
author:
- first_name: Sven S.
full_name: Buchholz, Sven S.
last_name: Buchholz
- first_name: Elmar
full_name: Sternemann, Elmar
last_name: Sternemann
- first_name: Olivio
full_name: Chiatti, Olivio
last_name: Chiatti
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Saskia F.
full_name: Fischer, Saskia F.
last_name: Fischer
citation:
ama: Buchholz SS, Sternemann E, Chiatti O, Reuter D, Wieck AD, Fischer SF. Noise
thermometry in narrow two-dimensional electron gas heat baths connected to a quasi-one-dimensional
interferometer. Physical Review B. 2012;85(23). doi:10.1103/physrevb.85.235301
apa: Buchholz, S. S., Sternemann, E., Chiatti, O., Reuter, D., Wieck, A. D., &
Fischer, S. F. (2012). Noise thermometry in narrow two-dimensional electron gas
heat baths connected to a quasi-one-dimensional interferometer. Physical Review
B, 85(23). https://doi.org/10.1103/physrevb.85.235301
bibtex: '@article{Buchholz_Sternemann_Chiatti_Reuter_Wieck_Fischer_2012, title={Noise
thermometry in narrow two-dimensional electron gas heat baths connected to a quasi-one-dimensional
interferometer}, volume={85}, DOI={10.1103/physrevb.85.235301},
number={23}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Buchholz, Sven S. and Sternemann, Elmar and Chiatti, Olivio and
Reuter, Dirk and Wieck, Andreas D. and Fischer, Saskia F.}, year={2012} }'
chicago: Buchholz, Sven S., Elmar Sternemann, Olivio Chiatti, Dirk Reuter, Andreas
D. Wieck, and Saskia F. Fischer. “Noise Thermometry in Narrow Two-Dimensional
Electron Gas Heat Baths Connected to a Quasi-One-Dimensional Interferometer.”
Physical Review B 85, no. 23 (2012). https://doi.org/10.1103/physrevb.85.235301.
ieee: S. S. Buchholz, E. Sternemann, O. Chiatti, D. Reuter, A. D. Wieck, and S.
F. Fischer, “Noise thermometry in narrow two-dimensional electron gas heat baths
connected to a quasi-one-dimensional interferometer,” Physical Review B,
vol. 85, no. 23, 2012.
mla: Buchholz, Sven S., et al. “Noise Thermometry in Narrow Two-Dimensional Electron
Gas Heat Baths Connected to a Quasi-One-Dimensional Interferometer.” Physical
Review B, vol. 85, no. 23, American Physical Society (APS), 2012, doi:10.1103/physrevb.85.235301.
short: S.S. Buchholz, E. Sternemann, O. Chiatti, D. Reuter, A.D. Wieck, S.F. Fischer,
Physical Review B 85 (2012).
date_created: 2019-01-31T10:24:35Z
date_updated: 2022-01-06T07:03:34Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevb.85.235301
intvolume: ' 85'
issue: '23'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Noise thermometry in narrow two-dimensional electron gas heat baths connected
to a quasi-one-dimensional interferometer
type: journal_article
user_id: '42514'
volume: 85
year: '2012'
...
---
_id: '7324'
author:
- first_name: H.
full_name: Kurtze, H.
last_name: Kurtze
- first_name: D. R.
full_name: Yakovlev, D. R.
last_name: Yakovlev
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: M.
full_name: Bayer, M.
last_name: Bayer
citation:
ama: Kurtze H, Yakovlev DR, Reuter D, Wieck AD, Bayer M. Hyperfine interaction mediated
exciton spin relaxation in (In,Ga)As quantum dots. Physical Review B. 2012;85(19).
doi:10.1103/physrevb.85.195303
apa: Kurtze, H., Yakovlev, D. R., Reuter, D., Wieck, A. D., & Bayer, M. (2012).
Hyperfine interaction mediated exciton spin relaxation in (In,Ga)As quantum dots.
Physical Review B, 85(19). https://doi.org/10.1103/physrevb.85.195303
bibtex: '@article{Kurtze_Yakovlev_Reuter_Wieck_Bayer_2012, title={Hyperfine interaction
mediated exciton spin relaxation in (In,Ga)As quantum dots}, volume={85}, DOI={10.1103/physrevb.85.195303},
number={19}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Kurtze, H. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A.
D. and Bayer, M.}, year={2012} }'
chicago: Kurtze, H., D. R. Yakovlev, Dirk Reuter, A. D. Wieck, and M. Bayer. “Hyperfine
Interaction Mediated Exciton Spin Relaxation in (In,Ga)As Quantum Dots.” Physical
Review B 85, no. 19 (2012). https://doi.org/10.1103/physrevb.85.195303.
ieee: H. Kurtze, D. R. Yakovlev, D. Reuter, A. D. Wieck, and M. Bayer, “Hyperfine
interaction mediated exciton spin relaxation in (In,Ga)As quantum dots,” Physical
Review B, vol. 85, no. 19, 2012.
mla: Kurtze, H., et al. “Hyperfine Interaction Mediated Exciton Spin Relaxation
in (In,Ga)As Quantum Dots.” Physical Review B, vol. 85, no. 19, American
Physical Society (APS), 2012, doi:10.1103/physrevb.85.195303.
short: H. Kurtze, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physical Review
B 85 (2012).
date_created: 2019-01-31T10:51:52Z
date_updated: 2022-01-06T07:03:35Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevb.85.195303
intvolume: ' 85'
issue: '19'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Hyperfine interaction mediated exciton spin relaxation in (In,Ga)As quantum
dots
type: journal_article
user_id: '42514'
volume: 85
year: '2012'
...
---
_id: '7325'
article_number: '165801'
author:
- first_name: J
full_name: Schuster, J
last_name: Schuster
- first_name: T Y
full_name: Kim, T Y
last_name: Kim
- first_name: E
full_name: Batke, E
last_name: Batke
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A D
full_name: Wieck, A D
last_name: Wieck
citation:
ama: 'Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Photoluminescence lineshape
features of carbon δ-doped GaAs heterostructures. Journal of Physics: Condensed
Matter. 2012;24(16). doi:10.1088/0953-8984/24/16/165801'
apa: 'Schuster, J., Kim, T. Y., Batke, E., Reuter, D., & Wieck, A. D. (2012).
Photoluminescence lineshape features of carbon δ-doped GaAs heterostructures.
Journal of Physics: Condensed Matter, 24(16). https://doi.org/10.1088/0953-8984/24/16/165801'
bibtex: '@article{Schuster_Kim_Batke_Reuter_Wieck_2012, title={Photoluminescence
lineshape features of carbon δ-doped GaAs heterostructures}, volume={24}, DOI={10.1088/0953-8984/24/16/165801},
number={16165801}, journal={Journal of Physics: Condensed Matter}, publisher={IOP
Publishing}, author={Schuster, J and Kim, T Y and Batke, E and Reuter, Dirk and
Wieck, A D}, year={2012} }'
chicago: 'Schuster, J, T Y Kim, E Batke, Dirk Reuter, and A D Wieck. “Photoluminescence
Lineshape Features of Carbon δ-Doped GaAs Heterostructures.” Journal of Physics:
Condensed Matter 24, no. 16 (2012). https://doi.org/10.1088/0953-8984/24/16/165801.'
ieee: 'J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Photoluminescence
lineshape features of carbon δ-doped GaAs heterostructures,” Journal of Physics:
Condensed Matter, vol. 24, no. 16, 2012.'
mla: 'Schuster, J., et al. “Photoluminescence Lineshape Features of Carbon δ-Doped
GaAs Heterostructures.” Journal of Physics: Condensed Matter, vol. 24,
no. 16, 165801, IOP Publishing, 2012, doi:10.1088/0953-8984/24/16/165801.'
short: 'J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Journal of Physics:
Condensed Matter 24 (2012).'
date_created: 2019-01-31T10:53:35Z
date_updated: 2022-01-06T07:03:35Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/0953-8984/24/16/165801
intvolume: ' 24'
issue: '16'
language:
- iso: eng
publication: 'Journal of Physics: Condensed Matter'
publication_identifier:
issn:
- 0953-8984
- 1361-648X
publication_status: published
publisher: IOP Publishing
status: public
title: Photoluminescence lineshape features of carbon δ-doped GaAs heterostructures
type: journal_article
user_id: '42514'
volume: 24
year: '2012'
...
---
_id: '7326'
author:
- first_name: L.
full_name: Bryja, L.
last_name: Bryja
- first_name: J.
full_name: Jadczak, J.
last_name: Jadczak
- first_name: A.
full_name: Wójs, A.
last_name: Wójs
- first_name: G.
full_name: Bartsch, G.
last_name: Bartsch
- first_name: D. R.
full_name: Yakovlev, D. R.
last_name: Yakovlev
- first_name: M.
full_name: Bayer, M.
last_name: Bayer
- first_name: P.
full_name: Plochocka, P.
last_name: Plochocka
- first_name: M.
full_name: Potemski, M.
last_name: Potemski
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Bryja L, Jadczak J, Wójs A, et al. Cyclotron-resonant exciton transfer between
the nearly free and strongly localized radiative states of a two-dimensional hole
gas in a high magnetic field. Physical Review B. 2012;85(16). doi:10.1103/physrevb.85.165308
apa: Bryja, L., Jadczak, J., Wójs, A., Bartsch, G., Yakovlev, D. R., Bayer, M.,
… Wieck, A. D. (2012). Cyclotron-resonant exciton transfer between the nearly
free and strongly localized radiative states of a two-dimensional hole gas in
a high magnetic field. Physical Review B, 85(16). https://doi.org/10.1103/physrevb.85.165308
bibtex: '@article{Bryja_Jadczak_Wójs_Bartsch_Yakovlev_Bayer_Plochocka_Potemski_Reuter_Wieck_2012,
title={Cyclotron-resonant exciton transfer between the nearly free and strongly
localized radiative states of a two-dimensional hole gas in a high magnetic field},
volume={85}, DOI={10.1103/physrevb.85.165308},
number={16}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Bryja, L. and Jadczak, J. and Wójs, A. and Bartsch, G. and Yakovlev,
D. R. and Bayer, M. and Plochocka, P. and Potemski, M. and Reuter, Dirk and Wieck,
A. D.}, year={2012} }'
chicago: Bryja, L., J. Jadczak, A. Wójs, G. Bartsch, D. R. Yakovlev, M. Bayer, P.
Plochocka, M. Potemski, Dirk Reuter, and A. D. Wieck. “Cyclotron-Resonant Exciton
Transfer between the Nearly Free and Strongly Localized Radiative States of a
Two-Dimensional Hole Gas in a High Magnetic Field.” Physical Review B 85,
no. 16 (2012). https://doi.org/10.1103/physrevb.85.165308.
ieee: L. Bryja et al., “Cyclotron-resonant exciton transfer between the nearly
free and strongly localized radiative states of a two-dimensional hole gas in
a high magnetic field,” Physical Review B, vol. 85, no. 16, 2012.
mla: Bryja, L., et al. “Cyclotron-Resonant Exciton Transfer between the Nearly Free
and Strongly Localized Radiative States of a Two-Dimensional Hole Gas in a High
Magnetic Field.” Physical Review B, vol. 85, no. 16, American Physical
Society (APS), 2012, doi:10.1103/physrevb.85.165308.
short: L. Bryja, J. Jadczak, A. Wójs, G. Bartsch, D.R. Yakovlev, M. Bayer, P. Plochocka,
M. Potemski, D. Reuter, A.D. Wieck, Physical Review B 85 (2012).
date_created: 2019-01-31T11:09:52Z
date_updated: 2022-01-06T07:03:35Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevb.85.165308
intvolume: ' 85'
issue: '16'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Cyclotron-resonant exciton transfer between the nearly free and strongly localized
radiative states of a two-dimensional hole gas in a high magnetic field
type: journal_article
user_id: '42514'
volume: 85
year: '2012'
...
---
_id: '7327'
article_number: '132103'
author:
- first_name: J.
full_name: Huang, J.
last_name: Huang
- first_name: Y. S.
full_name: Chen, Y. S.
last_name: Chen
- first_name: A.
full_name: Ludwig, A.
last_name: Ludwig
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: G.
full_name: Bacher, G.
last_name: Bacher
citation:
ama: Huang J, Chen YS, Ludwig A, Reuter D, Wieck AD, Bacher G. Electron-nuclei spin
coupling in GaAs—Free versus localized electrons. Applied Physics Letters.
2012;100(13). doi:10.1063/1.3699261
apa: Huang, J., Chen, Y. S., Ludwig, A., Reuter, D., Wieck, A. D., & Bacher,
G. (2012). Electron-nuclei spin coupling in GaAs—Free versus localized electrons.
Applied Physics Letters, 100(13). https://doi.org/10.1063/1.3699261
bibtex: '@article{Huang_Chen_Ludwig_Reuter_Wieck_Bacher_2012, title={Electron-nuclei
spin coupling in GaAs—Free versus localized electrons}, volume={100}, DOI={10.1063/1.3699261}, number={13132103},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Huang,
J. and Chen, Y. S. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Bacher,
G.}, year={2012} }'
chicago: Huang, J., Y. S. Chen, A. Ludwig, Dirk Reuter, A. D. Wieck, and G. Bacher.
“Electron-Nuclei Spin Coupling in GaAs—Free versus Localized Electrons.” Applied
Physics Letters 100, no. 13 (2012). https://doi.org/10.1063/1.3699261.
ieee: J. Huang, Y. S. Chen, A. Ludwig, D. Reuter, A. D. Wieck, and G. Bacher, “Electron-nuclei
spin coupling in GaAs—Free versus localized electrons,” Applied Physics Letters,
vol. 100, no. 13, 2012.
mla: Huang, J., et al. “Electron-Nuclei Spin Coupling in GaAs—Free versus Localized
Electrons.” Applied Physics Letters, vol. 100, no. 13, 132103, AIP Publishing,
2012, doi:10.1063/1.3699261.
short: J. Huang, Y.S. Chen, A. Ludwig, D. Reuter, A.D. Wieck, G. Bacher, Applied
Physics Letters 100 (2012).
date_created: 2019-01-31T11:11:08Z
date_updated: 2022-01-06T07:03:35Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3699261
intvolume: ' 100'
issue: '13'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Electron-nuclei spin coupling in GaAs—Free versus localized electrons
type: journal_article
user_id: '42514'
volume: 100
year: '2012'
...
---
_id: '7329'
author:
- first_name: J.
full_name: Houel, J.
last_name: Houel
- first_name: A. V.
full_name: Kuhlmann, A. V.
last_name: Kuhlmann
- first_name: L.
full_name: Greuter, L.
last_name: Greuter
- first_name: F.
full_name: Xue, F.
last_name: Xue
- first_name: M.
full_name: Poggio, M.
last_name: Poggio
- first_name: B. D.
full_name: Gerardot, B. D.
last_name: Gerardot
- first_name: P. A.
full_name: Dalgarno, P. A.
last_name: Dalgarno
- first_name: A.
full_name: Badolato, A.
last_name: Badolato
- first_name: P. M.
full_name: Petroff, P. M.
last_name: Petroff
- first_name: A.
full_name: Ludwig, A.
last_name: Ludwig
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: R. J.
full_name: Warburton, R. J.
last_name: Warburton
citation:
ama: Houel J, Kuhlmann AV, Greuter L, et al. Probing Single-Charge Fluctuations
at aGaAs/AlAsInterface Using Laser Spectroscopy on a Nearby InGaAs Quantum Dot.
Physical Review Letters. 2012;108(10). doi:10.1103/physrevlett.108.107401
apa: Houel, J., Kuhlmann, A. V., Greuter, L., Xue, F., Poggio, M., Gerardot, B.
D., … Warburton, R. J. (2012). Probing Single-Charge Fluctuations at aGaAs/AlAsInterface
Using Laser Spectroscopy on a Nearby InGaAs Quantum Dot. Physical Review Letters,
108(10). https://doi.org/10.1103/physrevlett.108.107401
bibtex: '@article{Houel_Kuhlmann_Greuter_Xue_Poggio_Gerardot_Dalgarno_Badolato_Petroff_Ludwig_et
al._2012, title={Probing Single-Charge Fluctuations at aGaAs/AlAsInterface Using
Laser Spectroscopy on a Nearby InGaAs Quantum Dot}, volume={108}, DOI={10.1103/physrevlett.108.107401},
number={10}, journal={Physical Review Letters}, publisher={American Physical Society
(APS)}, author={Houel, J. and Kuhlmann, A. V. and Greuter, L. and Xue, F. and
Poggio, M. and Gerardot, B. D. and Dalgarno, P. A. and Badolato, A. and Petroff,
P. M. and Ludwig, A. and et al.}, year={2012} }'
chicago: Houel, J., A. V. Kuhlmann, L. Greuter, F. Xue, M. Poggio, B. D. Gerardot,
P. A. Dalgarno, et al. “Probing Single-Charge Fluctuations at AGaAs/AlAsInterface
Using Laser Spectroscopy on a Nearby InGaAs Quantum Dot.” Physical Review Letters
108, no. 10 (2012). https://doi.org/10.1103/physrevlett.108.107401.
ieee: J. Houel et al., “Probing Single-Charge Fluctuations at aGaAs/AlAsInterface
Using Laser Spectroscopy on a Nearby InGaAs Quantum Dot,” Physical Review Letters,
vol. 108, no. 10, 2012.
mla: Houel, J., et al. “Probing Single-Charge Fluctuations at AGaAs/AlAsInterface
Using Laser Spectroscopy on a Nearby InGaAs Quantum Dot.” Physical Review Letters,
vol. 108, no. 10, American Physical Society (APS), 2012, doi:10.1103/physrevlett.108.107401.
short: J. Houel, A.V. Kuhlmann, L. Greuter, F. Xue, M. Poggio, B.D. Gerardot, P.A.
Dalgarno, A. Badolato, P.M. Petroff, A. Ludwig, D. Reuter, A.D. Wieck, R.J. Warburton,
Physical Review Letters 108 (2012).
date_created: 2019-01-31T11:12:55Z
date_updated: 2022-01-06T07:03:35Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevlett.108.107401
intvolume: ' 108'
issue: '10'
language:
- iso: eng
publication: Physical Review Letters
publication_identifier:
issn:
- 0031-9007
- 1079-7114
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Probing Single-Charge Fluctuations at aGaAs/AlAsInterface Using Laser Spectroscopy
on a Nearby InGaAs Quantum Dot
type: journal_article
user_id: '42514'
volume: 108
year: '2012'
...
---
_id: '7330'
article_number: '052101'
author:
- first_name: J. C. H.
full_name: Chen, J. C. H.
last_name: Chen
- first_name: D. Q.
full_name: Wang, D. Q.
last_name: Wang
- first_name: O.
full_name: Klochan, O.
last_name: Klochan
- first_name: A. P.
full_name: Micolich, A. P.
last_name: Micolich
- first_name: K.
full_name: Das Gupta, K.
last_name: Das Gupta
- first_name: F.
full_name: Sfigakis, F.
last_name: Sfigakis
- first_name: D. A.
full_name: Ritchie, D. A.
last_name: Ritchie
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: A. R.
full_name: Hamilton, A. R.
last_name: Hamilton
citation:
ama: Chen JCH, Wang DQ, Klochan O, et al. Fabrication and characterization of ambipolar
devices on an undoped AlGaAs/GaAs heterostructure. Applied Physics Letters.
2012;100(5). doi:10.1063/1.3673837
apa: Chen, J. C. H., Wang, D. Q., Klochan, O., Micolich, A. P., Das Gupta, K., Sfigakis,
F., … Hamilton, A. R. (2012). Fabrication and characterization of ambipolar devices
on an undoped AlGaAs/GaAs heterostructure. Applied Physics Letters, 100(5).
https://doi.org/10.1063/1.3673837
bibtex: '@article{Chen_Wang_Klochan_Micolich_Das Gupta_Sfigakis_Ritchie_Reuter_Wieck_Hamilton_2012,
title={Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs
heterostructure}, volume={100}, DOI={10.1063/1.3673837},
number={5052101}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Chen, J. C. H. and Wang, D. Q. and Klochan, O. and Micolich, A. P. and
Das Gupta, K. and Sfigakis, F. and Ritchie, D. A. and Reuter, Dirk and Wieck,
A. D. and Hamilton, A. R.}, year={2012} }'
chicago: Chen, J. C. H., D. Q. Wang, O. Klochan, A. P. Micolich, K. Das Gupta, F.
Sfigakis, D. A. Ritchie, Dirk Reuter, A. D. Wieck, and A. R. Hamilton. “Fabrication
and Characterization of Ambipolar Devices on an Undoped AlGaAs/GaAs Heterostructure.”
Applied Physics Letters 100, no. 5 (2012). https://doi.org/10.1063/1.3673837.
ieee: J. C. H. Chen et al., “Fabrication and characterization of ambipolar
devices on an undoped AlGaAs/GaAs heterostructure,” Applied Physics Letters,
vol. 100, no. 5, 2012.
mla: Chen, J. C. H., et al. “Fabrication and Characterization of Ambipolar Devices
on an Undoped AlGaAs/GaAs Heterostructure.” Applied Physics Letters, vol.
100, no. 5, 052101, AIP Publishing, 2012, doi:10.1063/1.3673837.
short: J.C.H. Chen, D.Q. Wang, O. Klochan, A.P. Micolich, K. Das Gupta, F. Sfigakis,
D.A. Ritchie, D. Reuter, A.D. Wieck, A.R. Hamilton, Applied Physics Letters 100
(2012).
date_created: 2019-01-31T11:14:10Z
date_updated: 2022-01-06T07:03:35Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3673837
intvolume: ' 100'
issue: '5'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs
heterostructure
type: journal_article
user_id: '42514'
volume: 100
year: '2012'
...
---
_id: '7334'
author:
- first_name: Henning
full_name: Höpfner, Henning
last_name: Höpfner
- first_name: Mingyuan
full_name: Li, Mingyuan
last_name: Li
- first_name: Arne
full_name: Ludwig, Arne
last_name: Ludwig
- first_name: Astrid
full_name: Ludwig, Astrid
last_name: Ludwig
- first_name: Frank
full_name: Stromberg, Frank
last_name: Stromberg
- first_name: Heiko
full_name: Wende, Heiko
last_name: Wende
- first_name: Werner
full_name: Keune, Werner
last_name: Keune
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Nils C.
full_name: Gerhardt, Nils C.
last_name: Gerhardt
- first_name: Martin R.
full_name: Hofmann, Martin R.
last_name: Hofmann
citation:
ama: 'Höpfner H, Li M, Ludwig A, et al. Room temperature spin relaxation in quantum
dot based spin-optoelectronic devices. In: Ultrafast Phenomena and Nanophotonics
XVI. SPIE; 2012. doi:10.1117/12.907821'
apa: Höpfner, H., Li, M., Ludwig, A., Ludwig, A., Stromberg, F., Wende, H., … Hofmann,
M. R. (2012). Room temperature spin relaxation in quantum dot based spin-optoelectronic
devices. In Ultrafast Phenomena and Nanophotonics XVI. SPIE. https://doi.org/10.1117/12.907821
bibtex: '@inproceedings{Höpfner_Li_Ludwig_Ludwig_Stromberg_Wende_Keune_Reuter_Wieck_Gerhardt_et
al._2012, title={Room temperature spin relaxation in quantum dot based spin-optoelectronic
devices}, DOI={10.1117/12.907821},
booktitle={Ultrafast Phenomena and Nanophotonics XVI}, publisher={SPIE}, author={Höpfner,
Henning and Li, Mingyuan and Ludwig, Arne and Ludwig, Astrid and Stromberg, Frank
and Wende, Heiko and Keune, Werner and Reuter, Dirk and Wieck, Andreas D. and
Gerhardt, Nils C. and et al.}, year={2012} }'
chicago: Höpfner, Henning, Mingyuan Li, Arne Ludwig, Astrid Ludwig, Frank Stromberg,
Heiko Wende, Werner Keune, et al. “Room Temperature Spin Relaxation in Quantum
Dot Based Spin-Optoelectronic Devices.” In Ultrafast Phenomena and Nanophotonics
XVI. SPIE, 2012. https://doi.org/10.1117/12.907821.
ieee: H. Höpfner et al., “Room temperature spin relaxation in quantum dot
based spin-optoelectronic devices,” in Ultrafast Phenomena and Nanophotonics
XVI, 2012.
mla: Höpfner, Henning, et al. “Room Temperature Spin Relaxation in Quantum Dot Based
Spin-Optoelectronic Devices.” Ultrafast Phenomena and Nanophotonics XVI,
SPIE, 2012, doi:10.1117/12.907821.
short: 'H. Höpfner, M. Li, A. Ludwig, A. Ludwig, F. Stromberg, H. Wende, W. Keune,
D. Reuter, A.D. Wieck, N.C. Gerhardt, M.R. Hofmann, in: Ultrafast Phenomena and
Nanophotonics XVI, SPIE, 2012.'
date_created: 2019-01-31T11:17:59Z
date_updated: 2022-01-06T07:03:35Z
department:
- _id: '15'
- _id: '230'
doi: 10.1117/12.907821
language:
- iso: eng
publication: Ultrafast Phenomena and Nanophotonics XVI
publication_status: published
publisher: SPIE
status: public
title: Room temperature spin relaxation in quantum dot based spin-optoelectronic devices
type: conference
user_id: '42514'
year: '2012'
...
---
_id: '7338'
author:
- first_name: Yan
full_name: Li, Yan
last_name: Li
- first_name: N.
full_name: Sinitsyn, N.
last_name: Sinitsyn
- first_name: D. L.
full_name: Smith, D. L.
last_name: Smith
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: D. R.
full_name: Yakovlev, D. R.
last_name: Yakovlev
- first_name: M.
full_name: Bayer, M.
last_name: Bayer
- first_name: S. A.
full_name: Crooker, S. A.
last_name: Crooker
citation:
ama: Li Y, Sinitsyn N, Smith DL, et al. Intrinsic Spin Fluctuations Reveal the Dynamical
Response Function of Holes Coupled to Nuclear Spin Baths in (In,Ga)As Quantum
Dots. Physical Review Letters. 2012;108(18). doi:10.1103/physrevlett.108.186603
apa: Li, Y., Sinitsyn, N., Smith, D. L., Reuter, D., Wieck, A. D., Yakovlev, D.
R., … Crooker, S. A. (2012). Intrinsic Spin Fluctuations Reveal the Dynamical
Response Function of Holes Coupled to Nuclear Spin Baths in (In,Ga)As Quantum
Dots. Physical Review Letters, 108(18). https://doi.org/10.1103/physrevlett.108.186603
bibtex: '@article{Li_Sinitsyn_Smith_Reuter_Wieck_Yakovlev_Bayer_Crooker_2012, title={Intrinsic
Spin Fluctuations Reveal the Dynamical Response Function of Holes Coupled to Nuclear
Spin Baths in (In,Ga)As Quantum Dots}, volume={108}, DOI={10.1103/physrevlett.108.186603},
number={18}, journal={Physical Review Letters}, publisher={American Physical Society
(APS)}, author={Li, Yan and Sinitsyn, N. and Smith, D. L. and Reuter, Dirk and
Wieck, A. D. and Yakovlev, D. R. and Bayer, M. and Crooker, S. A.}, year={2012}
}'
chicago: Li, Yan, N. Sinitsyn, D. L. Smith, Dirk Reuter, A. D. Wieck, D. R. Yakovlev,
M. Bayer, and S. A. Crooker. “Intrinsic Spin Fluctuations Reveal the Dynamical
Response Function of Holes Coupled to Nuclear Spin Baths in (In,Ga)As Quantum
Dots.” Physical Review Letters 108, no. 18 (2012). https://doi.org/10.1103/physrevlett.108.186603.
ieee: Y. Li et al., “Intrinsic Spin Fluctuations Reveal the Dynamical Response
Function of Holes Coupled to Nuclear Spin Baths in (In,Ga)As Quantum Dots,” Physical
Review Letters, vol. 108, no. 18, 2012.
mla: Li, Yan, et al. “Intrinsic Spin Fluctuations Reveal the Dynamical Response
Function of Holes Coupled to Nuclear Spin Baths in (In,Ga)As Quantum Dots.” Physical
Review Letters, vol. 108, no. 18, American Physical Society (APS), 2012, doi:10.1103/physrevlett.108.186603.
short: Y. Li, N. Sinitsyn, D.L. Smith, D. Reuter, A.D. Wieck, D.R. Yakovlev, M.
Bayer, S.A. Crooker, Physical Review Letters 108 (2012).
date_created: 2019-01-31T11:29:12Z
date_updated: 2022-01-06T07:03:35Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevlett.108.186603
intvolume: ' 108'
issue: '18'
language:
- iso: eng
publication: Physical Review Letters
publication_identifier:
issn:
- 0031-9007
- 1079-7114
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Intrinsic Spin Fluctuations Reveal the Dynamical Response Function of Holes
Coupled to Nuclear Spin Baths in (In,Ga)As Quantum Dots
type: journal_article
user_id: '42514'
volume: 108
year: '2012'
...
---
_id: '7490'
author:
- first_name: Marcel
full_name: Ruth, Marcel
last_name: Ruth
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Ruth M, Meier C. Scaling coefficient for three-dimensional grain coalescence
of ZnO on Si(111). Physical Review B. 2012;86(22). doi:10.1103/physrevb.86.224108
apa: Ruth, M., & Meier, C. (2012). Scaling coefficient for three-dimensional
grain coalescence of ZnO on Si(111). Physical Review B, 86(22).
https://doi.org/10.1103/physrevb.86.224108
bibtex: '@article{Ruth_Meier_2012, title={Scaling coefficient for three-dimensional
grain coalescence of ZnO on Si(111)}, volume={86}, DOI={10.1103/physrevb.86.224108},
number={22}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Ruth, Marcel and Meier, Cedrik}, year={2012} }'
chicago: Ruth, Marcel, and Cedrik Meier. “Scaling Coefficient for Three-Dimensional
Grain Coalescence of ZnO on Si(111).” Physical Review B 86, no. 22 (2012).
https://doi.org/10.1103/physrevb.86.224108.
ieee: M. Ruth and C. Meier, “Scaling coefficient for three-dimensional grain coalescence
of ZnO on Si(111),” Physical Review B, vol. 86, no. 22, 2012.
mla: Ruth, Marcel, and Cedrik Meier. “Scaling Coefficient for Three-Dimensional
Grain Coalescence of ZnO on Si(111).” Physical Review B, vol. 86, no. 22,
American Physical Society (APS), 2012, doi:10.1103/physrevb.86.224108.
short: M. Ruth, C. Meier, Physical Review B 86 (2012).
date_created: 2019-02-04T14:29:24Z
date_updated: 2022-01-06T07:03:39Z
department:
- _id: '15'
- _id: '230'
- _id: '287'
- _id: '35'
doi: 10.1103/physrevb.86.224108
intvolume: ' 86'
issue: '22'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Scaling coefficient for three-dimensional grain coalescence of ZnO on Si(111)
type: journal_article
user_id: '20798'
volume: 86
year: '2012'
...
---
_id: '7491'
article_number: '263114'
author:
- first_name: Philipp
full_name: Kröger, Philipp
last_name: Kröger
- first_name: Marcel
full_name: Ruth, Marcel
last_name: Ruth
- first_name: Nils
full_name: Weber, Nils
last_name: Weber
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Kröger P, Ruth M, Weber N, Meier C. Carrier localization in ZnO quantum wires.
Applied Physics Letters. 2012;100(26). doi:10.1063/1.4731767
apa: Kröger, P., Ruth, M., Weber, N., & Meier, C. (2012). Carrier localization
in ZnO quantum wires. Applied Physics Letters, 100(26). https://doi.org/10.1063/1.4731767
bibtex: '@article{Kröger_Ruth_Weber_Meier_2012, title={Carrier localization in ZnO
quantum wires}, volume={100}, DOI={10.1063/1.4731767},
number={26263114}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Kröger, Philipp and Ruth, Marcel and Weber, Nils and Meier, Cedrik}, year={2012}
}'
chicago: Kröger, Philipp, Marcel Ruth, Nils Weber, and Cedrik Meier. “Carrier Localization
in ZnO Quantum Wires.” Applied Physics Letters 100, no. 26 (2012). https://doi.org/10.1063/1.4731767.
ieee: P. Kröger, M. Ruth, N. Weber, and C. Meier, “Carrier localization in ZnO quantum
wires,” Applied Physics Letters, vol. 100, no. 26, 2012.
mla: Kröger, Philipp, et al. “Carrier Localization in ZnO Quantum Wires.” Applied
Physics Letters, vol. 100, no. 26, 263114, AIP Publishing, 2012, doi:10.1063/1.4731767.
short: P. Kröger, M. Ruth, N. Weber, C. Meier, Applied Physics Letters 100 (2012).
date_created: 2019-02-04T14:30:23Z
date_updated: 2022-01-06T07:03:39Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '287'
doi: 10.1063/1.4731767
intvolume: ' 100'
issue: '26'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Carrier localization in ZnO quantum wires
type: journal_article
user_id: '20798'
volume: 100
year: '2012'
...
---
_id: '7492'
author:
- first_name: J.
full_name: Kampmeier, J.
last_name: Kampmeier
- first_name: M.
full_name: Rashad, M.
last_name: Rashad
- first_name: U.
full_name: Woggon, U.
last_name: Woggon
- first_name: M.
full_name: Ruth, M.
last_name: Ruth
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: D.
full_name: Schikora, D.
last_name: Schikora
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
- first_name: A.
full_name: Pawlis, A.
last_name: Pawlis
citation:
ama: Kampmeier J, Rashad M, Woggon U, et al. Enhanced photoluminescence of colloidal
nanocrystals embedded in epitaxially grown semiconductor microstructures. Physical
Review B. 2012;85(15). doi:10.1103/physrevb.85.155405
apa: Kampmeier, J., Rashad, M., Woggon, U., Ruth, M., Meier, C., Schikora, D., …
Pawlis, A. (2012). Enhanced photoluminescence of colloidal nanocrystals embedded
in epitaxially grown semiconductor microstructures. Physical Review B,
85(15). https://doi.org/10.1103/physrevb.85.155405
bibtex: '@article{Kampmeier_Rashad_Woggon_Ruth_Meier_Schikora_Lischka_Pawlis_2012,
title={Enhanced photoluminescence of colloidal nanocrystals embedded in epitaxially
grown semiconductor microstructures}, volume={85}, DOI={10.1103/physrevb.85.155405},
number={15}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Kampmeier, J. and Rashad, M. and Woggon, U. and Ruth, M. and Meier,
Cedrik and Schikora, D. and Lischka, K. and Pawlis, A.}, year={2012} }'
chicago: Kampmeier, J., M. Rashad, U. Woggon, M. Ruth, Cedrik Meier, D. Schikora,
K. Lischka, and A. Pawlis. “Enhanced Photoluminescence of Colloidal Nanocrystals
Embedded in Epitaxially Grown Semiconductor Microstructures.” Physical Review
B 85, no. 15 (2012). https://doi.org/10.1103/physrevb.85.155405.
ieee: J. Kampmeier et al., “Enhanced photoluminescence of colloidal nanocrystals
embedded in epitaxially grown semiconductor microstructures,” Physical Review
B, vol. 85, no. 15, 2012.
mla: Kampmeier, J., et al. “Enhanced Photoluminescence of Colloidal Nanocrystals
Embedded in Epitaxially Grown Semiconductor Microstructures.” Physical Review
B, vol. 85, no. 15, American Physical Society (APS), 2012, doi:10.1103/physrevb.85.155405.
short: J. Kampmeier, M. Rashad, U. Woggon, M. Ruth, C. Meier, D. Schikora, K. Lischka,
A. Pawlis, Physical Review B 85 (2012).
date_created: 2019-02-04T14:31:38Z
date_updated: 2022-01-06T07:03:39Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '287'
doi: 10.1103/physrevb.85.155405
intvolume: ' 85'
issue: '15'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Enhanced photoluminescence of colloidal nanocrystals embedded in epitaxially
grown semiconductor microstructures
type: journal_article
user_id: '20798'
volume: 85
year: '2012'
...
---
_id: '4095'
abstract:
- lang: eng
text: "Aiming to diminish the reflection losses of glass covered light harvesting
devices, the optical reflectivity\r\nof nanostructured glass surfaces is studied
theoretically and experimentally. The work is inspired by\r\nthe nanoscale roughness
of insect eyes, which is tried to be replicated on a technical glass surface.
To\r\nthis end, the reflectivity of glass surfaces with topographies represented
by linear, parabolic and Fermishaped\r\nglass/air fill factor profiles is calculated
for normal incidence. It is shown that using the latter ones,\r\nan almost complete
suppression of reflections can be achieved. A simple, self-organization technique
to\r\ncreate such Fermi-shaped filling factor profiles in glass experimentally
is also presented."
article_type: original
author:
- first_name: J.
full_name: Achtelik, J.
last_name: Achtelik
- first_name: W.
full_name: Sievers, W.
last_name: Sievers
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Achtelik J, Sievers W, Lindner J. Biomimetic approaches to create anti-reflection
glass surfaces for solar cells using self-organizing techniques. Materials
Science and Engineering: B. 2012;178(9):635-638. doi:10.1016/j.mseb.2012.10.014'
apa: 'Achtelik, J., Sievers, W., & Lindner, J. (2012). Biomimetic approaches
to create anti-reflection glass surfaces for solar cells using self-organizing
techniques. Materials Science and Engineering: B, 178(9), 635–638.
https://doi.org/10.1016/j.mseb.2012.10.014'
bibtex: '@article{Achtelik_Sievers_Lindner_2012, title={Biomimetic approaches to
create anti-reflection glass surfaces for solar cells using self-organizing techniques},
volume={178}, DOI={10.1016/j.mseb.2012.10.014},
number={9}, journal={Materials Science and Engineering: B}, publisher={Elsevier
BV}, author={Achtelik, J. and Sievers, W. and Lindner, Jörg}, year={2012}, pages={635–638}
}'
chicago: 'Achtelik, J., W. Sievers, and Jörg Lindner. “Biomimetic Approaches to
Create Anti-Reflection Glass Surfaces for Solar Cells Using Self-Organizing Techniques.”
Materials Science and Engineering: B 178, no. 9 (2012): 635–38. https://doi.org/10.1016/j.mseb.2012.10.014.'
ieee: 'J. Achtelik, W. Sievers, and J. Lindner, “Biomimetic approaches to create
anti-reflection glass surfaces for solar cells using self-organizing techniques,”
Materials Science and Engineering: B, vol. 178, no. 9, pp. 635–638, 2012.'
mla: 'Achtelik, J., et al. “Biomimetic Approaches to Create Anti-Reflection Glass
Surfaces for Solar Cells Using Self-Organizing Techniques.” Materials Science
and Engineering: B, vol. 178, no. 9, Elsevier BV, 2012, pp. 635–38, doi:10.1016/j.mseb.2012.10.014.'
short: 'J. Achtelik, W. Sievers, J. Lindner, Materials Science and Engineering:
B 178 (2012) 635–638.'
conference:
end_date: 2012-05-18
location: Straßburg (France)
name: European Materials Research Society Spring Meeting 2012
start_date: 2012-05-14
date_created: 2018-08-23T12:37:40Z
date_updated: 2022-01-06T07:00:16Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
- _id: '230'
doi: 10.1016/j.mseb.2012.10.014
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-23T12:39:27Z
date_updated: 2018-08-23T12:39:27Z
file_id: '4096'
file_name: Biomimetic approaches to create anti-reflection glass surfaces for solar
cells using self-organizing techniques.pdf
file_size: 729276
relation: main_file
success: 1
file_date_updated: 2018-08-23T12:39:27Z
has_accepted_license: '1'
intvolume: ' 178'
issue: '9'
language:
- iso: eng
page: 635-638
publication: 'Materials Science and Engineering: B'
publication_identifier:
issn:
- 0921-5107
publication_status: published
publisher: Elsevier BV
status: public
title: Biomimetic approaches to create anti-reflection glass surfaces for solar cells
using self-organizing techniques
type: journal_article
user_id: '55706'
volume: 178
year: '2012'
...
---
_id: '4131'
abstract:
- lang: eng
text: "We report an anisotropic formation of defects in cubic GaN grown on nano-patterned
3C-SiC/Si (001) by molecular\r\nbeam epitaxy. Nano-patterning of 3C-SiC/Si (001)
is achieved by nanosphere lithography and a reactive\r\nion etching process. Atomic
force microscopy and scanning electron microscopy show that the selectivearea-\r\ngrown
cubic GaN nucleates in two structurally different domains, which most probably
originate from the\r\nsubstrate. In adjacent domains the formation of defects,
especially hexagonal inclusions, is different and leads to\r\ntwo different surface
morphologies. The dominant phase within these domains was measured by electron
backscatter\r\ndiffraction. Optical properties were investigated by micro-photoluminescence
and cathodoluminescence spectroscopy."
article_type: original
author:
- first_name: R. M.
full_name: Kemper, R. M.
last_name: Kemper
- first_name: M.
full_name: Häberlen, M.
last_name: Häberlen
- first_name: T.
full_name: Schupp, T.
last_name: Schupp
- first_name: M.
full_name: Weinl, M.
last_name: Weinl
- first_name: M.
full_name: Bürger, M.
last_name: Bürger
- first_name: M.
full_name: Ruth, M.
last_name: Ruth
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: T.
full_name: Niendorf, T.
last_name: Niendorf
- first_name: H. J.
full_name: Maier, H. J.
last_name: Maier
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
- first_name: D. J.
full_name: As, D. J.
last_name: As
- first_name: Jörg
full_name: Lindner, Jörg
last_name: Lindner
citation:
ama: Kemper RM, Häberlen M, Schupp T, et al. Formation of defects in cubic GaN grown
on nano-patterned 3C-SiC (001). physica status solidi (c). 2012;9(3-4):1028-1031.
doi:10.1002/pssc.201100174
apa: Kemper, R. M., Häberlen, M., Schupp, T., Weinl, M., Bürger, M., Ruth, M., …
Lindner, J. (2012). Formation of defects in cubic GaN grown on nano-patterned
3C-SiC (001). Physica Status Solidi (C), 9(3–4), 1028–1031. https://doi.org/10.1002/pssc.201100174
bibtex: '@article{Kemper_Häberlen_Schupp_Weinl_Bürger_Ruth_Meier_Niendorf_Maier_Lischka_et
al._2012, title={Formation of defects in cubic GaN grown on nano-patterned 3C-SiC
(001)}, volume={9}, DOI={10.1002/pssc.201100174},
number={3–4}, journal={physica status solidi (c)}, publisher={Wiley}, author={Kemper,
R. M. and Häberlen, M. and Schupp, T. and Weinl, M. and Bürger, M. and Ruth, M.
and Meier, Cedrik and Niendorf, T. and Maier, H. J. and Lischka, K. and et al.},
year={2012}, pages={1028–1031} }'
chicago: 'Kemper, R. M., M. Häberlen, T. Schupp, M. Weinl, M. Bürger, M. Ruth, Cedrik
Meier, et al. “Formation of Defects in Cubic GaN Grown on Nano-Patterned 3C-SiC
(001).” Physica Status Solidi (C) 9, no. 3–4 (2012): 1028–31. https://doi.org/10.1002/pssc.201100174.'
ieee: R. M. Kemper et al., “Formation of defects in cubic GaN grown on nano-patterned
3C-SiC (001),” physica status solidi (c), vol. 9, no. 3–4, pp. 1028–1031,
2012.
mla: Kemper, R. M., et al. “Formation of Defects in Cubic GaN Grown on Nano-Patterned
3C-SiC (001).” Physica Status Solidi (C), vol. 9, no. 3–4, Wiley, 2012,
pp. 1028–31, doi:10.1002/pssc.201100174.
short: R.M. Kemper, M. Häberlen, T. Schupp, M. Weinl, M. Bürger, M. Ruth, C. Meier,
T. Niendorf, H.J. Maier, K. Lischka, D.J. As, J. Lindner, Physica Status Solidi
(C) 9 (2012) 1028–1031.
date_created: 2018-08-27T11:31:07Z
date_updated: 2022-01-06T07:00:23Z
ddc:
- '530'
department:
- _id: '286'
- _id: '287'
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1002/pssc.201100174
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-27T11:35:10Z
date_updated: 2018-08-27T11:35:10Z
file_id: '4132'
file_name: Formation of defects in cubic GaN grown on nano-patterned 3C-SiC 001.pdf
file_size: 848414
relation: main_file
success: 1
file_date_updated: 2018-08-27T11:35:10Z
has_accepted_license: '1'
intvolume: ' 9'
issue: 3-4
language:
- iso: eng
page: 1028-1031
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: Formation of defects in cubic GaN grown on nano-patterned 3C-SiC (001)
type: journal_article
user_id: '20798'
volume: 9
year: '2012'
...