---
_id: '3888'
abstract:
- lang: eng
text: 'We successfully developed a process to fabricate freestanding cubic aluminium
nitride (c-AlN) membranes containing cubic gallium nitride (c-GaN) quantum dots
(QDs). The samples were grown by plasma assisted molecular beam epitaxy (MBE).
To realize the photonic crystal (PhC) membrane we have chosen a triangular array
of holes. The array was fabricated by electron beam lithography and several steps
of reactive ion etching (RIE) with the help of a hard mask and an undercut of
the active layer. The r/a- ratio of 0.35 was deter- mined by numerical simulations
to obtain a preferably wide photonic band gap. Micro-photoluminescence (μ-PL)
measurements of the photonic crystals, in particular of a H1 and a L3 cavity,
and the emission of the QD ensemble were performed to characterize the samples.
The PhCs show high quality factors of 4400 for the H1 cavity and about 5000/3000
for two different modes of the L3 cavity, respectively. The energy of the fundamental
modes is in good agreement to the numerical simulations. '
article_type: original
author:
- first_name: Sarah
full_name: Blumenthal, Sarah
last_name: Blumenthal
- first_name: Matthias
full_name: Bürger, Matthias
last_name: Bürger
- first_name: Andre
full_name: Hildebrandt, Andre
last_name: Hildebrandt
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
- first_name: Nils
full_name: Weber, Nils
last_name: Weber
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat J.
full_name: As, Donat J.
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Blumenthal S, Bürger M, Hildebrandt A, et al. Fabrication and characterization
of two-dimensional cubic AlN photonic crystal membranes containing zincblende
GaN quantum dots. physica status solidi (c). 2016;13(5-6):292-296. doi:10.1002/pssc.201600010
apa: Blumenthal, S., Bürger, M., Hildebrandt, A., Förstner, J., Weber, N., Meier,
C., Reuter, D., & As, D. J. (2016). Fabrication and characterization of two-dimensional
cubic AlN photonic crystal membranes containing zincblende GaN quantum dots. Physica
Status Solidi (c), 13(5–6), 292–296. https://doi.org/10.1002/pssc.201600010
bibtex: '@article{Blumenthal_Bürger_Hildebrandt_Förstner_Weber_Meier_Reuter_As_2016,
title={Fabrication and characterization of two-dimensional cubic AlN photonic
crystal membranes containing zincblende GaN quantum dots}, volume={13}, DOI={10.1002/pssc.201600010}, number={5–6},
journal={physica status solidi (c)}, publisher={Wiley}, author={Blumenthal, Sarah
and Bürger, Matthias and Hildebrandt, Andre and Förstner, Jens and Weber, Nils
and Meier, Cedrik and Reuter, Dirk and As, Donat J.}, year={2016}, pages={292–296}
}'
chicago: 'Blumenthal, Sarah, Matthias Bürger, Andre Hildebrandt, Jens Förstner,
Nils Weber, Cedrik Meier, Dirk Reuter, and Donat J. As. “Fabrication and Characterization
of Two-Dimensional Cubic AlN Photonic Crystal Membranes Containing Zincblende
GaN Quantum Dots.” Physica Status Solidi (c) 13, no. 5–6 (2016): 292–96.
https://doi.org/10.1002/pssc.201600010.'
ieee: 'S. Blumenthal et al., “Fabrication and characterization of two-dimensional
cubic AlN photonic crystal membranes containing zincblende GaN quantum dots,”
physica status solidi (c), vol. 13, no. 5–6, pp. 292–296, 2016, doi: 10.1002/pssc.201600010.'
mla: Blumenthal, Sarah, et al. “Fabrication and Characterization of Two-Dimensional
Cubic AlN Photonic Crystal Membranes Containing Zincblende GaN Quantum Dots.”
Physica Status Solidi (c), vol. 13, no. 5–6, Wiley, 2016, pp. 292–96, doi:10.1002/pssc.201600010.
short: S. Blumenthal, M. Bürger, A. Hildebrandt, J. Förstner, N. Weber, C. Meier,
D. Reuter, D.J. As, Physica Status Solidi (c) 13 (2016) 292–296.
date_created: 2018-08-13T09:14:58Z
date_updated: 2023-10-09T09:06:08Z
ddc:
- '530'
department:
- _id: '61'
- _id: '284'
- _id: '290'
- _id: '292'
- _id: '287'
- _id: '35'
- _id: '230'
doi: 10.1002/pssc.201600010
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-13T09:20:05Z
date_updated: 2018-08-13T09:20:05Z
file_id: '3889'
file_name: 2016-04 Blumenthal_et_al_Fabrication and characterization of two-dimensional
cubic AlN photonic crystal membranes containing zincblende GaN quantum dots_physica_status_solidi_(c).pdf
file_size: 1119165
relation: main_file
success: 1
file_date_updated: 2018-08-13T09:20:05Z
has_accepted_license: '1'
intvolume: ' 13'
issue: 5-6
keyword:
- tet_topic_phc
- tet_topic_qd
language:
- iso: eng
page: 292-296
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: Fabrication and characterization of two-dimensional cubic AlN photonic crystal
membranes containing zincblende GaN quantum dots
type: journal_article
user_id: '14931'
volume: 13
year: '2016'
...
---
_id: '3963'
abstract:
- lang: eng
text: "Whispering gallery modes (WGMs) were observed in 60 nm thin cubic AlN microdisk
resonators containing a single layer of non-polar cubic GaN quantum dots. Freestanding
microdisks were patterned by means of electron beam lithography and a two step
reactive ion etching process. Micro-photoluminescence spectroscopy investigations
were performed for optical characterization. We analyzed the mode spacing for
disk diameters ranging from 2-4 lm. Numerical investigations using three dimensional
finite difference time domain calculations were in good agreement\r\nwith the
experimental data. Whispering gallery modes of the radial orders 1 and 2 were
identified by means of simulated mode field distributions."
article_type: original
author:
- first_name: M.
full_name: Bürger, M.
last_name: Bürger
- first_name: M.
full_name: Ruth, M.
last_name: Ruth
- first_name: S.
full_name: Declair, S.
last_name: Declair
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Bürger M, Ruth M, Declair S, Förstner J, Meier C, As DJ. Whispering gallery
modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots. Applied
Physics Letters. 2013;102(8):081105. doi:10.1063/1.4793653
apa: Bürger, M., Ruth, M., Declair, S., Förstner, J., Meier, C., & As, D. J.
(2013). Whispering gallery modes in zinc-blende AlN microdisks containing non-polar
GaN quantum dots. Applied Physics Letters, 102(8), 081105. https://doi.org/10.1063/1.4793653
bibtex: '@article{Bürger_Ruth_Declair_Förstner_Meier_As_2013, title={Whispering
gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots},
volume={102}, DOI={10.1063/1.4793653},
number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Bürger,
M. and Ruth, M. and Declair, S. and Förstner, Jens and Meier, Cedrik and As, Donat
Josef}, year={2013}, pages={081105} }'
chicago: 'Bürger, M., M. Ruth, S. Declair, Jens Förstner, Cedrik Meier, and Donat
Josef As. “Whispering Gallery Modes in Zinc-Blende AlN Microdisks Containing Non-Polar
GaN Quantum Dots.” Applied Physics Letters 102, no. 8 (2013): 081105. https://doi.org/10.1063/1.4793653.'
ieee: M. Bürger, M. Ruth, S. Declair, J. Förstner, C. Meier, and D. J. As, “Whispering
gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots,”
Applied Physics Letters, vol. 102, no. 8, p. 081105, 2013.
mla: Bürger, M., et al. “Whispering Gallery Modes in Zinc-Blende AlN Microdisks
Containing Non-Polar GaN Quantum Dots.” Applied Physics Letters, vol. 102,
no. 8, AIP Publishing, 2013, p. 081105, doi:10.1063/1.4793653.
short: M. Bürger, M. Ruth, S. Declair, J. Förstner, C. Meier, D.J. As, Applied Physics
Letters 102 (2013) 081105.
date_created: 2018-08-21T07:43:22Z
date_updated: 2022-01-06T07:00:01Z
ddc:
- '530'
department:
- _id: '15'
- _id: '287'
- _id: '284'
- _id: '230'
- _id: '35'
doi: 10.1063/1.4793653
file:
- access_level: open_access
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-21T07:47:02Z
date_updated: 2018-09-04T20:08:52Z
file_id: '3964'
file_name: 2013-02 Bürger,Ruth,Declair,Förstner,Meier,As_Whispering gallery modes
in zinc-blende AlN microdisks containing non-polar GaN quantum dots.pdf
file_size: 935911
relation: main_file
file_date_updated: 2018-09-04T20:08:52Z
has_accepted_license: '1'
intvolume: ' 102'
issue: '8'
keyword:
- tet_topic_qd
- tet_topic_microdisk
language:
- iso: eng
oa: '1'
page: '081105'
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Whispering gallery modes in zinc-blende AlN microdisks containing non-polar
GaN quantum dots
type: journal_article
urn: '39635'
user_id: '14'
volume: 102
year: '2013'
...
---
_id: '13568'
author:
- first_name: C.
full_name: Mietze, C.
last_name: Mietze
- first_name: M.
full_name: Landmann, M.
last_name: Landmann
- first_name: E.
full_name: Rauls, E.
last_name: Rauls
- first_name: H.
full_name: Machhadani, H.
last_name: Machhadani
- first_name: S.
full_name: Sakr, S.
last_name: Sakr
- first_name: M.
full_name: Tchernycheva, M.
last_name: Tchernycheva
- first_name: F. H.
full_name: Julien, F. H.
last_name: Julien
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Mietze C, Landmann M, Rauls E, et al. Band offsets in cubic GaN/AlN superlattices.
Physical Review B. 2011;83(19). doi:10.1103/physrevb.83.195301
apa: Mietze, C., Landmann, M., Rauls, E., Machhadani, H., Sakr, S., Tchernycheva,
M., Julien, F. H., Schmidt, W. G., Lischka, K., & As, D. J. (2011). Band offsets
in cubic GaN/AlN superlattices. Physical Review B, 83(19). https://doi.org/10.1103/physrevb.83.195301
bibtex: '@article{Mietze_Landmann_Rauls_Machhadani_Sakr_Tchernycheva_Julien_Schmidt_Lischka_As_2011,
title={Band offsets in cubic GaN/AlN superlattices}, volume={83}, DOI={10.1103/physrevb.83.195301},
number={19}, journal={Physical Review B}, author={Mietze, C. and Landmann, M.
and Rauls, E. and Machhadani, H. and Sakr, S. and Tchernycheva, M. and Julien,
F. H. and Schmidt, Wolf Gero and Lischka, K. and As, Donat Josef}, year={2011}
}'
chicago: Mietze, C., M. Landmann, E. Rauls, H. Machhadani, S. Sakr, M. Tchernycheva,
F. H. Julien, Wolf Gero Schmidt, K. Lischka, and Donat Josef As. “Band Offsets
in Cubic GaN/AlN Superlattices.” Physical Review B 83, no. 19 (2011). https://doi.org/10.1103/physrevb.83.195301.
ieee: 'C. Mietze et al., “Band offsets in cubic GaN/AlN superlattices,” Physical
Review B, vol. 83, no. 19, 2011, doi: 10.1103/physrevb.83.195301.'
mla: Mietze, C., et al. “Band Offsets in Cubic GaN/AlN Superlattices.” Physical
Review B, vol. 83, no. 19, 2011, doi:10.1103/physrevb.83.195301.
short: C. Mietze, M. Landmann, E. Rauls, H. Machhadani, S. Sakr, M. Tchernycheva,
F.H. Julien, W.G. Schmidt, K. Lischka, D.J. As, Physical Review B 83 (2011).
date_created: 2019-10-01T09:11:23Z
date_updated: 2025-12-05T10:41:18Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '284'
- _id: '35'
- _id: '230'
- _id: '27'
doi: 10.1103/physrevb.83.195301
intvolume: ' 83'
issue: '19'
language:
- iso: eng
project:
- _id: '52'
name: Computing Resources Provided by the Paderborn Center for Parallel Computing
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
status: public
title: Band offsets in cubic GaN/AlN superlattices
type: journal_article
user_id: '16199'
volume: 83
year: '2011'
...
---
_id: '13835'
author:
- first_name: A.
full_name: Scholle, A.
last_name: Scholle
- first_name: S.
full_name: Greulich-Weber, S.
last_name: Greulich-Weber
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: Ch.
full_name: Mietze, Ch.
last_name: Mietze
- first_name: N. T.
full_name: Son, N. T.
last_name: Son
- first_name: C.
full_name: Hemmingsson, C.
last_name: Hemmingsson
- first_name: B.
full_name: Monemar, B.
last_name: Monemar
- first_name: E.
full_name: Janzén, E.
last_name: Janzén
- first_name: Uwe
full_name: Gerstmann, Uwe
id: '171'
last_name: Gerstmann
orcid: 0000-0002-4476-223X
- first_name: S.
full_name: Sanna, S.
last_name: Sanna
- first_name: E.
full_name: Rauls, E.
last_name: Rauls
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
citation:
ama: Scholle A, Greulich-Weber S, As DJ, et al. Magnetic characterization of conductance
electrons in GaN. physica status solidi (b). 2010;247(7):1728-1731. doi:10.1002/pssb.200983582
apa: Scholle, A., Greulich-Weber, S., As, D. J., Mietze, Ch., Son, N. T., Hemmingsson,
C., Monemar, B., Janzén, E., Gerstmann, U., Sanna, S., Rauls, E., & Schmidt,
W. G. (2010). Magnetic characterization of conductance electrons in GaN. Physica
Status Solidi (b), 247(7), 1728–1731. https://doi.org/10.1002/pssb.200983582
bibtex: '@article{Scholle_Greulich-Weber_As_Mietze_Son_Hemmingsson_Monemar_Janzén_Gerstmann_Sanna_et
al._2010, title={Magnetic characterization of conductance electrons in GaN}, volume={247},
DOI={10.1002/pssb.200983582},
number={7}, journal={physica status solidi (b)}, author={Scholle, A. and Greulich-Weber,
S. and As, Donat Josef and Mietze, Ch. and Son, N. T. and Hemmingsson, C. and
Monemar, B. and Janzén, E. and Gerstmann, Uwe and Sanna, S. and et al.}, year={2010},
pages={1728–1731} }'
chicago: 'Scholle, A., S. Greulich-Weber, Donat Josef As, Ch. Mietze, N. T. Son,
C. Hemmingsson, B. Monemar, et al. “Magnetic Characterization of Conductance Electrons
in GaN.” Physica Status Solidi (b) 247, no. 7 (2010): 1728–31. https://doi.org/10.1002/pssb.200983582.'
ieee: 'A. Scholle et al., “Magnetic characterization of conductance electrons
in GaN,” physica status solidi (b), vol. 247, no. 7, pp. 1728–1731, 2010,
doi: 10.1002/pssb.200983582.'
mla: Scholle, A., et al. “Magnetic Characterization of Conductance Electrons in
GaN.” Physica Status Solidi (b), vol. 247, no. 7, 2010, pp. 1728–31, doi:10.1002/pssb.200983582.
short: A. Scholle, S. Greulich-Weber, D.J. As, Ch. Mietze, N.T. Son, C. Hemmingsson,
B. Monemar, E. Janzén, U. Gerstmann, S. Sanna, E. Rauls, W.G. Schmidt, Physica
Status Solidi (b) 247 (2010) 1728–1731.
date_created: 2019-10-15T07:40:58Z
date_updated: 2025-12-16T07:46:59Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '284'
- _id: '790'
- _id: '35'
- _id: '230'
doi: 10.1002/pssb.200983582
funded_apc: '1'
intvolume: ' 247'
issue: '7'
language:
- iso: eng
page: 1728-1731
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
- 1521-3951
publication_status: published
status: public
title: Magnetic characterization of conductance electrons in GaN
type: journal_article
user_id: '16199'
volume: 247
year: '2010'
...
---
_id: '4218'
abstract:
- lang: eng
text: 'In this work we focus on the fabrication of ohmic contacts and of Schottky
barrier devices (SBD) on non-polar cubic GaN epilayers grown by molecular beam
epitaxy (MBE). A Ti/Al/Ni/Au metallization was used for ohmic contacts and the
contact resistance was measured by transmission line measurements (TLM). Ni, Pd,
Ag and NiSi Schottky barrier devices 300 µm in diameter were fabricated by thermal
evaporation using contact lithography on cubic GaN epilayers. The current-voltage
(I-V) and the capacity-voltage (C-V) characteristics were studied at room temperature
in detail. A clear rectifying behavior was measured in all SBDs. In the Ni and
Ag SBDs an abnormal large leakage current under reverse bias was observed. Isochronal
thermal annealing of these Ni and Ag based SBDs at 200°C in air improved the reverse
characteristics by up to three orders of magnitude. This is in contrast to the
Pd contacts, where the as grown contact showed already good performance and thermal
annealing had nearly no influence on the I-V characteristics. For all SBDs the
magnitude of the reverse current is generally larger than that expected due to
thermionic emission and an exponential increase of the reverse current is observed
with increasing reverse voltage. In-depth analysis of the I-V characteristic showed
that a thin surface barrier is formed at the metal semiconductor interface and
that crystal defects like dislocations may be the reasons for the discrepancy
between experimental data and thermionic emission theory. '
author:
- first_name: Donat J.
full_name: As, Donat J.
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: Elena
full_name: Tschumak, Elena
last_name: Tschumak
- first_name: Irina
full_name: Laubenstein, Irina
last_name: Laubenstein
- first_name: Ricarda M.
full_name: Kemper, Ricarda M.
last_name: Kemper
- first_name: Klaus
full_name: Lischka, Klaus
last_name: Lischka
citation:
ama: 'As DJ, Tschumak E, Laubenstein I, Kemper RM, Lischka K. Schottky and Ohmic
Contacts on Non-Polar Cubic GaN Epilayers. In: Materials Research Society Symposium
Proceedings. Vol 1108. Materials Research Society; 2009:3-8. doi:10.1557/proc-1108-a01-02'
apa: As, D. J., Tschumak, E., Laubenstein, I., Kemper, R. M., & Lischka, K.
(2009). Schottky and Ohmic Contacts on Non-Polar Cubic GaN Epilayers. Materials
Research Society Symposium Proceedings, 1108, 3–8. https://doi.org/10.1557/proc-1108-a01-02
bibtex: '@inproceedings{As_Tschumak_Laubenstein_Kemper_Lischka_2009, title={Schottky
and Ohmic Contacts on Non-Polar Cubic GaN Epilayers}, volume={1108}, DOI={10.1557/proc-1108-a01-02},
booktitle={Materials Research Society Symposium Proceedings}, publisher={Materials
Research Society}, author={As, Donat J. and Tschumak, Elena and Laubenstein, Irina
and Kemper, Ricarda M. and Lischka, Klaus}, year={2009}, pages={3–8} }'
chicago: As, Donat J., Elena Tschumak, Irina Laubenstein, Ricarda M. Kemper, and
Klaus Lischka. “Schottky and Ohmic Contacts on Non-Polar Cubic GaN Epilayers.”
In Materials Research Society Symposium Proceedings, 1108:3–8. Materials
Research Society, 2009. https://doi.org/10.1557/proc-1108-a01-02.
ieee: 'D. J. As, E. Tschumak, I. Laubenstein, R. M. Kemper, and K. Lischka, “Schottky
and Ohmic Contacts on Non-Polar Cubic GaN Epilayers,” in Materials Research
Society Symposium Proceedings, 2009, vol. 1108, pp. 3–8, doi: 10.1557/proc-1108-a01-02.'
mla: As, Donat J., et al. “Schottky and Ohmic Contacts on Non-Polar Cubic GaN Epilayers.”
Materials Research Society Symposium Proceedings, vol. 1108, Materials
Research Society, 2009, pp. 3–8, doi:10.1557/proc-1108-a01-02.
short: 'D.J. As, E. Tschumak, I. Laubenstein, R.M. Kemper, K. Lischka, in: Materials
Research Society Symposium Proceedings, Materials Research Society, 2009, pp.
3–8.'
date_created: 2018-08-28T12:57:35Z
date_updated: 2023-10-09T09:12:30Z
department:
- _id: '15'
- _id: '284'
doi: 10.1557/proc-1108-a01-02
intvolume: ' 1108'
language:
- iso: eng
page: 3-8
publication: Materials Research Society Symposium Proceedings
publication_status: published
publisher: Materials Research Society
status: public
title: Schottky and Ohmic Contacts on Non-Polar Cubic GaN Epilayers
type: conference
user_id: '14931'
volume: 1108
year: '2009'
...