@article{4146,
  abstract     = {{The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001) substrates by plasma-assisted molecular beam epitaxy is reported. The influence of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting in equal plane orientation and the same anti-phase boundaries. The presence of the APDs is independent of the GaN layer thickness. Atomic force microscopy surface analysis indicates lateral growth anisotropy of GaN facets in dependence of the APD orientation. This anisotropy can be linked to Ga and N face types of the {111} planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to 3C-SiC, however, a difference in GaN phase composition for the two types of APDs can be measured by electron backscatter diffraction, μ-Raman and cathodoluminescence spectroscopy.}},
  author       = {{Maria Kemper, Ricarda and Schupp, Thorsten and Häberlen, Maik and Niendorf, Thomas and Maier, Hans-Jürgen and Dempewolf, Anja and Bertram, Frank and Christen, Jürgen and Kirste, Ronny and Hoffmann, Axel and Lindner, Jörg and As, Donat}},
  issn         = {{0021-8979}},
  journal      = {{Journal of Applied Physics}},
  number       = {{12}},
  publisher    = {{AIP Publishing}},
  title        = {{{Anti-phase domains in cubic GaN}}},
  doi          = {{10.1063/1.3666050}},
  volume       = {{110}},
  year         = {{2011}},
}

@article{4144,
  abstract     = {{Non-polar relaxed cubic GaN was grown by molecular beam epitaxy (MBE) on nano-patterned 3C-SiC/Si 
(0 0 1)substrates with negligible hexagonal content and less defect density than in planar cubic GaN layers.Nano-patterning of 3C-SiC/Si(001) is achieved by self-ordered colloidal masks for the first time. The method presented here offers the possibility to create nano-patterned cubic GaN without the need for a GaN etching process andt hus isa potential alternative to the conventional top–down fabrication techniques.}},
  author       = {{Kemper, R.M. and Weinl, M. and Mietze, C. and Häberlen, M. and Schupp, T. and Tschumak, E. and Lindner, Jörg and Lischka, K. and As, Donald }},
  issn         = {{0022-0248}},
  journal      = {{Journal of Crystal Growth}},
  number       = {{1}},
  pages        = {{84--87}},
  publisher    = {{Elsevier BV}},
  title        = {{{Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates}}},
  doi          = {{10.1016/j.jcrysgro.2010.12.042}},
  volume       = {{323}},
  year         = {{2010}},
}

@article{4153,
  abstract     = {{Nanosphere lithography (NSL) masks consisting of mono- or double-layers of polystyrene (PS) nano-beads are fabricated on silicon exploiting the self-organization of PS particles during the controlled drying of a colloidal suspension on a surface. The shape changes and shrinkage of PS sphere masks upon treatment in an air plasma are studied as a function of initial sphere size, plasma power and treatment time. The influence of several experimental parameters, including the plasma induced temperature rise, are analysed using scanning and transmission electron microscopy. It is demonstrated that a variety of new intriguing nanopatterns can be generated on silicon surfaces by the combination of NSL and plasma techniques, largely broadening the variety of patterns available so far by NSL.}},
  author       = {{Gogel, D. and Weinl, M. and Lindner, Jörg and Stritzker, B.}},
  journal      = {{JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS}},
  number       = {{3}},
  pages        = {{740--744}},
  title        = {{{Plasma modification of nanosphere lithography masks made of polystyrene beads}}},
  volume       = {{12}},
  year         = {{2010}},
}

@article{4194,
  abstract     = {{A heterojunction field-effect transistor (HFET) was fabricated of nonpolar cubic AlGaN/GaN grown on Ar+ implanted 3C–SiC (001) by molecular beam epitaxy. The device shows a clear field effect at positive bias voltages with V_th=0.6 V. The HFET output characteristics were calculated using ATLAS simulation program. The electron channel at the cubic AlGaN/GaN interface was detected by room temperature capacitance-voltage measurements.}},
  author       = {{Tschumak, E. and Granzner, R. and Lindner, Jörg and Schwierz, F. and Lischka, K. and Nagasawa, H. and Abe, M. and As, Donald}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  number       = {{25}},
  publisher    = {{AIP Publishing}},
  title        = {{{Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)}}},
  doi          = {{10.1063/1.3455066}},
  volume       = {{96}},
  year         = {{2010}},
}

@article{4204,
  abstract     = {{A comparative theoretical investigation of carbon interstitials in silicon is presented. Calculations using
classical potentials are compared to first-principles density-functional theory calculations of the geometries,
formation, and activation energies of the carbon dumbbell interstitial, showing the importance of a quantummechanical
description of this system. In contrast to previous studies, the present first-principles calculations of
the interstitial carbon migration path yield an activation energy that excellently matches the experiment. The
bond-centered interstitial configuration shows a net magnetization of two electrons, illustrating the need for
spin-polarized calculations.}},
  author       = {{Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Lindner, Jörg and Schmidt, W. G. and Rauls, E.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{9}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Defects in carbon implanted silicon calculated by classical potentials and first-principles methods}}},
  doi          = {{10.1103/physrevb.82.094110}},
  volume       = {{82}},
  year         = {{2010}},
}

@inproceedings{4206,
  author       = {{Lindner, Jörg}},
  location     = {{Universidad Autónoma de Madrid (Spain)}},
  title        = {{{Advanced topics and applications of Transmission Electron Microscopy, Part I-II}}},
  year         = {{2010}},
}

@book{4207,
  editor       = {{Ila, D. and Kishimoto, N.  and Lindner, Jörg and Baglin, J.}},
  isbn         = {{978-1-60511-154-4}},
  location     = {{San Francisco (USA)}},
  publisher    = {{MRS Symposium Proceedings }},
  title        = {{{Ion Beams and Nano-Engineering}}},
  volume       = {{1181}},
  year         = {{2010}},
}

@article{4152,
  abstract     = {{A novel technique to form periodically nanostructured Si surface morphologies based on nanosphere lithography (NSL) and He ion implantation induced swelling is studied in detail. It is shown that by implantation of keV He ions through the nanometric openings of NSL masks regular arrays of hillocks and rings can be created on silicon surfaces. The shape and size of these surface features can be easily controlled by adjusting the ion dose and energy as well as the mask size. Feature heights of more than 100 nm can be obtained, while feature distances are typically 1.15 or 2 (hillock or ring) nanosphere radii, which are chosen to be between 100 and 500 nm in this study. Atomic force and scanning electron microscopy measurements of the surface morphology are supplemented by cross-sectional transmission electron microscopy, revealing the inner structure of hillocks to consist of a central cavity surrounded by a hierarchical arrangement of smaller voids. The surface morphologies developed here have the potential to be useful for fixing and separating nano-objects on a silicon surface.}},
  author       = {{Fischer, Frederic J.C. and Weinl, Michael and Lindner, Jörg and Stritzker, Bernd}},
  issn         = {{1946-4274}},
  journal      = {{MRS Proceedings}},
  location     = {{San Franicsco (USA)}},
  publisher    = {{Cambridge University Press (CUP)}},
  title        = {{{Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks}}},
  doi          = {{10.1557/proc-1181-dd10-02}},
  volume       = {{1181}},
  year         = {{2009}},
}

@article{4196,
  abstract     = {{The growth of cubic group III-nitrides is a direct way to eliminate polarization effects, which inherently limit the fabrication of normally-off heterojunction field-effect transistors (HFETs) in GaN technology. HFET structures were fabricated of non-polar cubic AlGaN/GaN hetero layers grown by plasma assisted molecular beam epitaxy (MBE) on free standing 3C-SiC (001). The electrical insulation of 3C-SiC was realised by Ar+ implantation before c-AlGaN/GaN MBE. The structural properties of the epilayers were studied by highresolution x-ray diffraction (HRXRD). HFETs with normally off and normally-on characteristics were fabricated of cubic AlGaN/GaN. Capacitance-voltage (CV) characteristics of thegate contact were performed to detect the electron channel at the c-AlGaN/GaN hetero interface.}},
  author       = {{Tschumak, Elena and Lindner, Jörg and Bürger, M. and Lischka, K. and Nagasawa, H. and Abe, M. and As, Donald}},
  issn         = {{1862-6351}},
  journal      = {{physica status solidi (c)}},
  number       = {{1}},
  pages        = {{104--107}},
  publisher    = {{Wiley}},
  title        = {{{Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001)}}},
  doi          = {{10.1002/pssc.200982615}},
  volume       = {{7}},
  year         = {{2009}},
}